JP2013003829A - Electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic device which can achieve improvement of detectability of a sensor module.SOLUTION: An electronic device comprises a display panel and a sensor module. The display panel has an array substrate AS having plural signal lines, plural scan lines and plural pixels. The sensor module has plural sensor circuits arranged in a ratio of one in an area in which plural adjacent pixels are provided. The sensor circuit comprises: a detection electrode DE which extends in a row direction and whose coupling capacitor varies depending on an input operation with input means 30; a connection electrode 16 connected to the detection electrode; and an amplifier which is connected with the detection electrode DE via the connection electrode 16, and amplifies detection voltage at the detection electrode DE. The detection electrode DE is located at a connection side by the input means of the display panel than the signal lines.

Description

  Embodiments described herein relate generally to an electronic apparatus.

  In general, electronic devices such as a PDA (Personal Digital Assistant) and a tablet PC (Personal Computer) are configured to be able to input data directly from a display screen using an input means such as a finger or a conductor. In the electronic apparatus, a sensor circuit that detects a change in capacitance is provided on a display panel that displays an image. For this reason, the electronic device can extract the position information of the part touched by the input means by taking out the change in the capacitance of the sensor circuit.

JP 2009-271756 A

By the way, when the sensor circuit is provided on the display panel, there is a problem that the difference in potential change amount with and without the input means at the detection electrode cannot be increased, and the detection sensitivity of the sensor circuit is not sufficient.
The present invention has been made in view of the above points, and an object thereof is to provide an electronic device capable of improving the detection sensitivity of a sensor circuit.

An electronic device according to an embodiment is
In an electronic device that displays an image and extracts position information of a place touched by an input means,
An array substrate having a plurality of signal lines extending in a column direction, a plurality of scanning lines extending in a row direction, and a plurality of pixels connected to the plurality of signal lines and the plurality of scanning lines. A display panel provided;
A detection electrode that is arranged at a ratio in a region where the plurality of adjacent pixels are provided, extends in the row direction, and has a coupling capacitance that changes according to an input operation by the input unit; and the detection electrode A sensor module including a plurality of sensor circuits, and a connection electrode connected to the detection electrode, and an amplifier connected to the detection electrode via the connection electrode and amplifying a detection voltage at the detection electrode. ,
The detection electrode is located on the contact side of the display panel by the input means with respect to the signal line.

FIG. 1 is a schematic perspective view illustrating an electronic apparatus according to the first embodiment. FIG. 2 is a schematic configuration diagram showing the electronic device shown in FIG. 1, and is a plan view showing the array substrate. FIG. 3 is a diagram illustrating an equivalent circuit such as a pixel and a sensor circuit of the electronic device. FIG. 4 is an enlarged plan view showing a part of the array substrate of the electronic apparatus. FIG. 5 is a cross-sectional view showing the electronic apparatus taken along line AA of FIG. FIG. 6 is an enlarged plan view showing a part of the array substrate of the electronic device according to the second embodiment. FIG. 7 is a cross-sectional view showing the electronic apparatus taken along line BB in FIG.

Hereinafter, the electronic apparatus according to the first embodiment will be described in detail with reference to the drawings.
As shown in FIG. 1, the electronic device includes a liquid crystal display panel P as a display panel for displaying an image, a sensor module M provided in the liquid crystal display panel P, and a backlight unit B.

  As shown in FIGS. 1, 2, and 5, the liquid crystal display panel P includes an array substrate AS, a counter substrate OS, and a liquid crystal layer LC. The array substrate AS and the counter substrate OS are each formed in a rectangular shape. The array substrate AS is formed with a size larger than that of the counter substrate OS. The array substrate AS and the counter substrate OS are arranged so that the three sides of each of them overlap each other.

  Although not shown, on the remaining side of the array substrate AS, the array substrate AS extends outward from the counter substrate OS. The extended portion of the array substrate AS and the substrate 50 are connected by an FPC (flexible printed circuit) 52. The liquid crystal display panel P has a rectangular display area (active area) R1 that overlaps the array substrate AS and the counter substrate OS. Note that an input area R2, which will be described later, overlaps the display area R1.

  Outside the display region R1, an X driver XD and Y drivers YD1 and YD2 are formed on the array substrate AS side (on a glass substrate 1 described later). The IC 51 (sensor LSI) formed (mounted) on the substrate 50 is electrically connected to the X driver XD and the Y drivers YD1 and YD2 via the FPC 52. The IC 51 performs processing such as converting at least the sensor output into a digital signal. Note that image display data is given to the X driver XD and the Y drivers YD1 and YD2 via another FPC (not shown).

  The array substrate AS and the counter substrate OS are arranged to face each other while holding a predetermined gap by a plurality of columnar spacers (not shown). The array substrate AS and the counter substrate OS are joined to each other by a rectangular frame-shaped sealing material 31 arranged at the peripheral portions of both substrates, which is the peripheral portion of the display region R1.

  The liquid crystal layer LC is sandwiched between the array substrate AS and the counter substrate OS, and is surrounded by the sealing material 31. A liquid crystal injection port 32 formed in a part of the sealing material 31 is sealed with a sealing material 33. In this embodiment, the liquid crystal display panel P has a display surface Sc on the array substrate AS side. The display surface Sc also functions as an input surface. For this reason, the liquid crystal display panel P has a structure called a front array structure, and the array substrate AS is arranged on the user side with respect to the counter substrate OS.

  The backlight unit B is disposed on the opposite side of the array substrate AS with respect to the counter substrate OS. The backlight unit B includes a light guide plate disposed to face the counter substrate OS, and a light source and a reflector plate disposed to face one side edge of the light guide plate. The backlight unit B emits light toward the counter substrate OS.

  The liquid crystal display panel P controls whether or not the incident backlight is transmitted. The liquid crystal display panel P displays an image in the display region R1 by transmitting light to the outer surface side of the counter substrate OS.

  As shown in FIGS. 2 and 3, the array substrate AS has a plurality of pixels PX provided in a matrix along the row direction X and the column direction Y orthogonal to each other. The plurality of pixels PX overlap the display region R1. N pixels PX are arranged in the row direction X and m in the column direction Y (m, n: natural numbers). The number of pixels PX is m × n.

  The pixel PX displays one of a plurality of colors, and in this embodiment, displays any one of red, green, and blue. In this embodiment, the red pixel PX, the green pixel PX, and the blue pixel PX are repeatedly arranged in the row direction X. The red pixel PX is overlaid on a red colored layer described later, the green pixel PX is overlaid on a green colored layer described below, and the blue pixel PX is overlaid on a blue colored layer described below.

  The array substrate AS has a plurality (n) of signal lines s, a plurality (m) of scanning lines g, and a plurality (m) of auxiliary capacitance lines c. The signal lines s extend in the column direction Y and are arranged at intervals in the row direction X. The signal line s is connected to the X driver XD. During the horizontal scanning period and the vertical scanning period, video signals are supplied to the plurality of signal lines s via the X driver XD.

  The scanning lines g extend in the row direction X and are arranged at intervals in the column direction Y. The auxiliary capacitance line c is arranged with an interval from the scanning line g. As with the scanning line g, the storage capacitor line c extends in the row direction X and is arranged at intervals in the column direction Y. The scanning line g and the auxiliary capacitance line c are connected to at least one of the Y driver YD1 and the Y driver YD2.

  The plurality of pixels PX are provided in the vicinity of intersections of the plurality of signal lines s, the plurality of scanning lines g, and the plurality of auxiliary capacitance lines c. The pixel PX is connected to the signal line s, the scanning line g, and the auxiliary capacitance line c. The pixel PX includes a switching element GSW, a pixel electrode EP, and an auxiliary capacitor Cs.

  The switching element GSW is electrically connected to the scanning line g and the signal line s, and is formed of a TFT (thin film transistor). Here, the switching element GSW is formed of an NMOS type TFT. The pixel electrode EP is electrically connected to the switching element GSW. The auxiliary capacitor Cs is electrically connected to the pixel electrode EP. The auxiliary capacitance Cs includes an auxiliary capacitance line c and an auxiliary capacitance electrode (not shown), and forms a capacitance.

  As shown in FIGS. 2 to 5, the sensor module M includes a plurality of sensor circuits SN, a plurality (9n / 12) of capacitive coupling lines cup, and a plurality (n / 12) of first precharge lines. pre1, multiple (n / 12) second precharge lines pre2, multiple (m / 2) precharge control lines preg, multiple (n / 12) output lines out, and multiple (m / 2) output control lines outg.

  One sensor circuit SN is arranged in a region (pixel group) where a plurality of adjacent pixels PX are provided. In this embodiment, one sensor circuit SN is arranged for every 24 pixels PX (2 rows × 12 columns). The number of sensor circuits SN is (m / 2) × (n / 12).

  The precharge control line preg is arranged with an interval between the scanning line g and the auxiliary capacitance line c. The precharge control lines preg extend in the row direction X and are arranged at intervals in the column direction Y. The precharge control line preg is connected to at least one of the Y driver YD1 and the Y driver YD2. A precharge control signal is supplied to the precharge control line preg from the Y drivers YD1 and YD2.

  Here, the precharge control line preg has a plurality of divided portions. Adjacent divided portions (disconnected portions) are connected by connection electrodes (joints) 11. This is to suppress ESD (Electro Static Discharge) breakdown of the gate insulating film described later. That is, the semiconductor layer 3 of the precharge control switch PSW, which will be described later, and the gate electrode 6 are short-circuited to prevent the precharge control switch PSW from being damaged.

  The output control line outg is arranged at intervals with the scanning line g, the auxiliary capacitance line c, and the precharge control line preg. The output control lines outg extend in the row direction X and are arranged at intervals in the column direction Y. The output control line outg is connected to at least one of the Y driver YD1 and the Y driver YD2. Output control signals are supplied to the output control line outg from the Y drivers YD1 and YD2.

  Here, the output control line outg has a plurality of division parts. Adjacent divided parts (disconnected parts) are connected by connection electrodes (joints) 12. This is to suppress ESD breakdown of the gate insulating film described later. That is, the semiconductor layer 5 and the gate electrode 8 of the output control switch OSW, which will be described later, are short-circuited to prevent the output control switch OSW from being damaged.

  The first precharge line pre1, the second precharge line pre2, the output line out, and the capacitive coupling line cup are shared with the signal line s. The first precharge line pre1, the second precharge line pre2, and the output line out are arranged one by one for each sensor circuit SN. Nine capacitive coupling lines “cup” are arranged for each sensor circuit SN.

  The capacitance coupling line cup forms a capacitance with a later-described detection electrode DE, and pulls up or down the voltage of the detection electrode DE. In this embodiment, the second precharge line pre2 forms a capacitance with the gate electrode 7 electrically connected to the detection electrode DE, and pulls up the voltage of the gate electrode 7 (detection electrode DE). Alternatively, it can be said to function as a capacitive coupling line because it is pulled down.

The sensor circuit SN includes a detection electrode DE, a precharge control switch PSW, an amplifier AMP, and an output control switch OSW.
The detection electrode DE extends in the row direction X, and the coupling capacitance changes according to the input operation by the input means 30.

  The precharge control switch PSW is formed of a TFT, and here is formed of an NMOS type TFT. The precharge control switch PSW is connected between the first precharge line pre1 and the detection electrode DE, and applies a first precharge voltage as a precharge voltage input via the first precharge line pre1 to the detection electrode DE. Switch whether or not.

  Specifically, in the precharge control switch PSW, the gate electrode 6 is connected to the precharge control line preg, the source region of the semiconductor layer 3 is connected to the first precharge line pre1, and the drain region of the semiconductor layer 3 is connected to the connection electrode 13. Etc., and connected to the detection electrode DE. The precharge control switch PSW switches whether to output the first precharge voltage to the detection electrode DE according to the precharge control signal.

  The precharge control switch PSW applies a first precharge voltage to the detection electrode DE at a timing when a high (H) level precharge control signal is applied to the gate electrode 6 via the precharge control line preg. The precharge control switch PSW initializes the potential of the detection electrode DE, and controls the operating point of the amplifier AMP described later in detail.

  The amplifier AMP is formed of a TFT, and here is formed of an NMOS type TFT. In the gate electrode 7 of the amplifier AMP, one end is connected to the detection electrode DE through the connection electrode 16, and the other end is connected to the drain region of the semiconductor layer 3 through the connection electrode 13. The source electrode 14 of the amplifier AMP is connected to the second precharge line pre2.

  The amplifier AMP is supplied with the second precharge voltage supplied via the second precharge line pre2 as a source voltage, amplifies the potential of the detection electrode DE, and outputs the amplified potential to the drain electrode 15.

  The output control switch OSW is formed of a TFT, and here is formed of an NMOS type TFT. The output control switch OSW is connected to the amplifier AMP. The output control switch OSW is connected between the drain electrode 15 of the amplifier AMP and the output line out. The output control switch OSW switches whether to output the amplified detection voltage. The output control switch OSW is switched to a conductive state when reading the capacitance variation of the detection electrode DE.

  Specifically, in the output control switch OSW, the gate electrode 8 is connected to the output control line outg, the source region of the semiconductor layer 5 is connected to the drain electrode 15 of the amplifier AMP, and the drain region of the semiconductor layer 5 is connected to the output line out. Has been. Here, the third precharge voltage is applied to the output line out. By applying the third precharge voltage, the potential of the output line out can be reset.

  The output control switch OSW is switched to a conductive state at a timing when a high (H) level output control signal is applied to the gate electrode via the output control line outg. At this time, the potential of the output line out varies according to the capacitance variation of the detection electrode DE based on the presence or absence of the coupling capacitance Cf between the input unit 30 and the detection electrode DE and the strength. In other words, by acquiring the fluctuation of the potential of the output line out, it is possible to extract the position information of the place touched by the input means 30.

  In addition, the extraction of the position information of the part touched by the input means 30 using the sensor module M is performed during a horizontal blanking period or a vertical blanking period in which no video signal is written.

  In the detection electrode DE, the width (the length in the column direction Y) of the portion that intersects with the capacitive coupling line cup is smaller than the width of the portion located between the capacitive coupling lines cup. Thereby, the parasitic capacitance Cp formed between the detection electrode DE and the capacitive coupling line cup can be reduced.

  As shown in FIG. 4, the capacitive coupling line cup has a plurality of shield electrodes SLD protruding in the row direction X. The detection electrode DE is surrounded by a plurality of shield electrodes SLD. The detection electrode DE is electrostatically shielded by a plurality of shield electrodes SLD (capacitive coupling line cup). For this reason, it is possible to suppress parasitic capacitance that may be formed between the detection electrode DE and each wiring or electrode.

The plurality of pixels PX are uniformly arranged along the row direction X, and are inverted and arranged for each row along the column direction Y.
In the column direction Y, the width w of the sensor unit is substantially the same as two auxiliary capacitors Cs arranged in the column direction Y.

Next, a laminated structure of the liquid crystal display panel P provided with the sensor module M will be described.
As shown in FIGS. 3 to 5, the array substrate AS has a rectangular glass substrate 1 as a transparent insulating substrate. A base layer 2 is formed on the glass substrate 1. The underlayer 2 includes an undercoat insulating film formed on the glass substrate 1, semiconductor layers 3, 4, and 5 formed on the undercoat insulating film, a semiconductor layer of the switching element GSW, an auxiliary capacitance electrode, A gate insulating film covering the semiconductor layer and the auxiliary capacitance electrode is included. In this embodiment, each semiconductor layer and the auxiliary capacitance electrode are made of polysilicon.

  A plurality of conductive layers made of MoW (molybdenum / tungsten) are formed on the underlying layer 2 (gate insulating film). Examples of these conductive layers include a precharge control line preg, an output control line outg, gate electrodes 6, 7, and 8, a detection electrode DE, a scanning line g, and an auxiliary capacitance line c.

An interlayer insulating film is formed on the base layer 2 on which the conductive layer is formed. The interlayer insulating film is formed by laminating an insulating film 9 made of SiN and an insulating film 10 made of SiO ₂ .

  A plurality of conductive layers made of aluminum (Al) are formed on the interlayer insulating film (insulating film 10). These conductive layers include a signal line s (first precharge line pre1, second precharge line pre2, output line out, capacitive coupling line cup), connection electrodes 11, 12, 16, source electrode 14, and drain electrode. 15, shield electrode SLD, and the like. For example, the connection electrode 16 is connected to the gate electrode 7 through a contact hole penetrating the insulating films 9 and 10 on the one hand, and is connected to the detection electrode DE through another contact hole penetrating the insulating films 9 and 10 on the other hand. It is connected.

  A passivation film 17 and a planarizing film 18 are sequentially formed on the interlayer insulating film on which the conductive layer is formed. An upper layer 19 is formed on the planarizing film 18. The upper layer 19 includes a common electrode ET formed on the planarizing film 18, an insulating film formed on the planarizing film 18 on which the common electrode ET is formed, and a common electrode ET formed on the insulating film and facing the common electrode ET. The pixel electrode EP and an alignment film formed on the insulating film on which the pixel electrode EP is formed. A plurality of slits are formed in the pixel electrode EP. For this reason, the liquid crystal display panel P adopts an FFS (Fringe Field Switching) mode using a lateral electric field.

  The common electrode ET and the pixel electrode EP are made of, for example, ITO (indium tin oxide) as a light-transmitting conductive material. Although the pixel electrode EP is not formed in the sensor part, a part of the common electrode ET is also formed in the sensor part. However, the common electrode ET has a plurality of missing portions facing the gate electrode 7 and the detection electrode DE.

The counter substrate OS has a rectangular glass substrate 21 as a transparent insulating substrate. A counter pattern 22 is formed on the glass substrate 21. The counter pattern 22 includes a color filter formed on the glass substrate 21 and an alignment film formed on the color filter. The color filter has a black matrix layer and a plurality of colored layers of red, green, and blue.
An optical element OD1 including a polarizing plate is disposed on the outer surface of the glass substrate 1, and an optical element OD2 including a polarizing plate is disposed on the outer surface of the glass substrate 21.

  According to the electronic apparatus according to the first embodiment configured as described above, the electronic apparatus includes the liquid crystal display panel P and the sensor module M. The input surface side is the outer surface side of the array substrate AS.

  In the detection electrode DE in the sensor circuit SN, the potential change amount (potential change amount at the other end when the potential at one end of the capacitor is changed) differs depending on whether or not the input means 30 (finger or conductor) is touched. A difference occurs in the potential of the gate electrode 7 of the AMP. This potential difference appears as an output signal from the amplifier AMP to the output line out through the output control switch OSW.

  In order to increase the potential difference (ΔV) between the presence and absence of the input means 30 at the detection electrode DE, it is necessary to make the coupling capacitance Cf as large as possible and the parasitic capacitance Cp as small as possible.

  Therefore, the detection electrode DE is formed so as to be positioned on the input surface side (contact side by the input means 30) of the liquid crystal display panel P from the signal line s. Thereby, when the input surface on the outer surface side of the array substrate AS is contacted by the input means 30, it is possible to reduce the amount that the coupling between the detection electrode DE and the input means 30 is shielded by the signal line s. The coupling capacitance Cf can be increased. Since the difference in potential change amount with and without the input means 30 at the detection electrode DE can be increased, the detection sensitivity of the sensor module M can be improved, and as a result, the S / N ratio can be improved. You can also.

The gate electrode 7 of the amplifier AMP and the detection electrode DE are not directly connected, but are indirectly connected via the connection electrode 16. Although the gate electrode 7 and the detection electrode DE are made of MoW, the connection electrode 16 is made of Al. By connecting the gate electrode 7 and the detection electrode DE via the connection electrode 16, the occurrence of electrostatic breakdown (ESD breakdown) during the manufacturing process of the array substrate AS can be reduced, and the spread of electrostatic breakdown is increased. Can be suppressed.
From the above, an electronic device that can improve the detection sensitivity of the sensor module can be obtained.

  Next, an electronic apparatus according to the second embodiment will be described. In this embodiment, other configurations are the same as those of the first embodiment described above, and the same portions are denoted by the same reference numerals and detailed description thereof is omitted.

  As shown in FIGS. 6 and 7, the liquid crystal display panel P has a display surface Sc on the counter substrate OS side. The display surface Sc also functions as an input surface. Therefore, the liquid crystal display panel P has a structure called a rear array structure, and the counter substrate OS is arranged on the user side from the array substrate AS. The backlight unit B is disposed on the opposite side of the counter substrate OS with respect to the array substrate AS. The backlight unit B emits light toward the array substrate AS.

  An electrode CE is formed on the base layer 2. The electrode CE is formed of the same material in the same layer as the gate electrode 7. The electrode CE is formed at an interval from the gate electrode 7, and is connected to the gate electrode 7 via the connection electrode 16.

  A detection electrode DE is formed on the planarizing film 18. The detection electrode DE is formed of the same material (ITO) in the same layer as the common electrode ET. The detection electrode DE is formed at an interval from the common electrode ET. The detection electrode DE is connected to the connection electrode 16 through a contact hole formed through the passivation film 17 and the planarization film 18.

  The detection electrode DE extends in the row direction X, and the coupling capacitance changes according to the input operation by the input means 30. In the detection electrode DE, the width of the portion (the length in the column direction Y) that intersects the capacitive coupling line cup is smaller than the width of the location located between the capacitive coupling lines cup.

  An upper layer 19 is formed on the planarizing film 18 on which the detection electrode DE is formed. The upper layer 19 includes an insulating film formed on the planarizing film 18 on which the common electrode ET and the detection electrode DE are formed, a pixel electrode EP formed on the insulating film and facing the common electrode ET, and the pixel electrode EP. And an alignment film formed on the formed insulating film.

  According to the electronic apparatus according to the second embodiment configured as described above, the electronic apparatus includes the liquid crystal display panel P and the sensor module M. The input surface side is the outer surface side of the counter substrate OS.

  The detection electrode DE is formed so as to be positioned closer to the input surface of the liquid crystal display panel P than the signal line s. Thereby, when the input surface on the outer surface side of the counter substrate OS is contacted by the input means 30, it is possible to reduce the amount that the coupling between the detection electrode DE and the input means 30 is shielded by the signal line s. The coupling capacitance Cf can be increased. Since the difference in potential change amount with and without the input means 30 at the detection electrode DE can be increased, the detection sensitivity of the sensor module M can be improved, and as a result, the S / N ratio can be improved. You can also.

The gate electrode 7 of the amplifier AMP and the detection electrode DE are not directly connected, but are indirectly connected via the connection electrode 16. Although the gate electrode 7 and the detection electrode DE are made of MoW, the connection electrode 16 is made of Al. For this reason, by connecting the gate electrode 7 and the detection electrode DE via the connection electrode 16, it is possible to reduce the occurrence of electrostatic breakdown (ESD breakdown) during the manufacturing process of the array substrate AS. The spread of destruction can be suppressed.
From the above, an electronic device that can improve the detection sensitivity of the sensor module can be obtained.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the components without departing from the scope of the invention in the implementation stage. Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiments. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

  For example, it is formed between the detection electrode DE and the capacitive coupling line cup according to the second embodiment, compared to the parasitic capacitance Cp formed between the detection electrode DE and the capacitive coupling line cup according to the first embodiment. The parasitic capacitance Cp is small. For this reason, in the second embodiment, the width of the portion of the detection electrode DE that intersects the capacitive coupling line cup can be made larger than that in the first embodiment.

  The detection electrode DE may have the same width over the entire region along the row direction X. In other words, the width (the length in the column direction Y) where the detection electrode DE intersects the capacitive coupling line cup may be the same as the width of the location located between the capacitive coupling lines cup. Since the area of the detection electrode DE can be increased, the coupling capacitance Cf can be further increased. Note that the above is particularly effective when the detection electrode DE is formed in the same layer as the common electrode ET as shown in the second embodiment.

  The liquid crystal display panel P adopts an FFS (Fringe Field Switching) mode using a horizontal electric field, but is not limited to this, and various modes can be adopted. In this case, it goes without saying that the above-described effects can be obtained although the wiring structure and the laminated structure of the liquid crystal display panel P are different.

The display panel is not limited to the liquid crystal display panel P, and may be any display panel configured to display an image in the display region R1.
The present invention is not limited to the electronic device described above, and can be applied to various electronic devices.

  DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 7 ... Gate electrode, 16 ... Connection electrode, P ... Liquid crystal display panel, M ... Sensor module, AS ... Array substrate, OS ... Opposite substrate, LC ... Liquid crystal layer, Sc ... Display surface, PX ... Pixel, s ... signal line, g ... scanning line, c ... auxiliary capacitance line, GSW ... switching element, EP ... pixel electrode, ET ... common electrode, Cs ... auxiliary capacitance, SN ... sensor circuit, cup ... capacitance coupling line, pre1 ... First precharge line, pre2 ... second precharge line, preg ... precharge control line, out ... output line, outg ... output control line, DE ... sensing electrode, Cf ... coupling capacitance, PSW ... precharge control switch, AMP ... Amplifier, OSW ... Output control switch, SLD ... Shield electrode, R1 ... Display area, R2 ... Input area, X ... Row direction, Y ... Column direction.

Claims (7)

In an electronic device that displays an image and extracts position information of a place touched by an input means,
An array substrate having a plurality of signal lines extending in a column direction, a plurality of scanning lines extending in a row direction, and a plurality of pixels connected to the plurality of signal lines and the plurality of scanning lines. A display panel provided;
A detection electrode that is arranged at a ratio in a region where the plurality of adjacent pixels are provided, extends in the row direction, and has a coupling capacitance that changes according to an input operation by the input unit; and the detection electrode A sensor module including a plurality of sensor circuits, and a connection electrode connected to the detection electrode, and an amplifier connected to the detection electrode via the connection electrode and amplifying a detection voltage at the detection electrode. ,
The electronic device according to claim 1, wherein the detection electrode is positioned on a contact side of the display panel by the input unit with respect to the signal line. The contact side by the input means is the outer surface side of the array substrate,
The electronic device according to claim 1, wherein the connection electrode is formed in the same layer as the signal line. The connection electrode is made of Al,
The electronic device according to claim 2, wherein the detection electrode is made of MoW. The display panel further includes a counter substrate disposed to face the array substrate,
The electronic device according to claim 1, wherein a contact side of the input unit is an outer surface side of the counter substrate. The connection electrode is made of Al,
The electronic device according to claim 4, wherein the detection electrode is made of ITO.   The electronic device according to claim 1, wherein the detection electrodes have the same width over the entire region along the row direction.   Each of the plurality of sensor circuits is connected to the detection electrode and is connected to the precharge control switch for switching whether to output the precharge voltage to the detection electrode; and the amplifier is configured to output the amplified detection voltage. The electronic apparatus according to claim 1, further comprising: an output control switch that switches whether to output.

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