JP2012249179A - Method for manufacturing piezoelectric device, wafer laminate structure, piezoelectric device and piezoelectric module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric device capable of eliminating inconvenience caused by individualizing a piezoelectric device from a laminate wafer, and improving productivity, rate of good articles and reliability at the joint surface between layers, a method for manufacturing the same, and a wafer laminate structure.SOLUTION: A method for manufacturing a piezoelectric device comprises: a step for forming a first wafer 66 having a plurality of first substrates 14 arranged separately from each other and first beams 68A and 68B coupling neighboring first substrates 14 each other: a step for forming a piezoelectric vibration wafer 70 having a plurality of piezoelectric vibration substrates 26 arranged separately from each other and laminated on the first substrates 14 and second beams 72A and 72B coupling neighboring piezoelectric vibration substrates 26 and laminated on the first beams 68A and 68B: a step for forming a plurality of piezoelectric devices 10 formed by laminating the first substrates 14 and piezoelectric vibration substrates 26 by laminating a piezoelectric vibration wafer 70 on the first wafer 66; and a step for individualizing piezoelectric devices 10 by cutting the fist beams 68A and 68B and the second beams 72A and 72B.

Description

  The present invention relates to a method for manufacturing a piezoelectric device, a laminated structure of a wafer, a piezoelectric device, and a piezoelectric module, and more particularly to a technique for improving mass productivity.

Conventionally, a pressure sensor of a type in which a pressure-sensitive element is connected to a diaphragm and the pressure-sensitive element detects a stress caused by bending deformation of the diaphragm is known.
FIG. 18 shows a schematic diagram of the pressure sensor described in Patent Document 1, FIG. 18 (a) is an exploded perspective view, and FIG. 18 (b) is a sectional view. In Patent Document 1, a first layer 302, a pressure-sensitive element layer 308 having a pressure-sensitive element 310 (vibrating part), a diaphragm 324, and a second layer 318 having a pair of force transmission parts 326 connected to the diaphragm 324 are disclosed. A pressure sensor 300 having a three-layer structure is disclosed. Here, the force transmission part 326 is connected to a pair of base parts 312 constituting the pressure-sensitive element 310. Further, the pressure sensitive element 310 (vibrating part) can vibrate at a predetermined resonance frequency.

  In the above configuration, when the diaphragm 324 receives pressure from the outside, the diaphragm 324 is bent and deformed inside the pressure sensor 300. And since the space | interval of force transmission parts 326 spreads by this bending deformation, the space | interval of base parts 312 also spreads. Therefore, a tensile stress is applied to the pressure sensitive element 310, thereby changing the resonance frequency of the pressure sensitive element 310. Therefore, the pressure can be detected by monitoring the change in the resonance frequency.

  FIG. 19 shows a schematic diagram of the pressure sensor described in Patent Document 2, FIG. 19 (a) is an exploded perspective view, and FIG. 19 (b) is a top view. Similar to the pressure sensor 300 of Patent Document 1, the pressure sensor 400 of Patent Document 2 has a three-layer structure of a first layer 401, a pressure-sensitive element layer 402, and a second layer 412, and is formed in a planar rectangular shape as a whole. Has been. On one short side of the frame portion 404 of the pressure-sensitive element layer 402, a pair of pad electrodes 410 that are electrically connected to the vibration portion 408 are disposed at both ends thereof. Further, a notch 414 for exposing the pad electrode 410 is formed in a portion of the second layer 412 facing the pad electrode 410. Thus, by stacking the first layer 401, the pressure sensitive element layer 402, and the second layer 412, the pad electrodes 410 in which the protrusions 416 are exposed in the region sandwiched between the notches 414 are isolated from each other. It becomes.

  When manufacturing such a three-layer piezoelectric device, for example, a manufacturing process as disclosed in Patent Document 3 has been proposed. 20 shows a manufacturing process of a piezoelectric device having a three-layer structure described in Patent Document 3, FIG. 20 (a) is a process before stacking wafers, FIG. 20 (b) is a process when stacking wafers, and FIG. (C) shows the process of individualization.

  That is, as shown in FIG. 20A, each layer is configured as a mother substrate 502, 504, 506 formed by connecting individual pieces (the above-described first layer, pressure-sensitive element layer, and second layer) in an array. As shown in FIG. 20 (b), these three mother substrates 502, 504, and 506 are stacked, and as shown in FIG. 20 (c), a plurality of piezoelectric devices 500 are obtained by dicing. A similar technique is also disclosed in Patent Document 4.

  FIG. 21 shows a manufacturing process of a piezoelectric device having a three-layer structure described in Patent Document 5, FIG. 21 (a) is a groove forming process, FIG. 21 (b) is a stacking process, and FIG. 21 (c) is an individualization process. FIG. 21 (d) is an exploded perspective view of the piezoelectric device of FIG. 21 (c).

  In Patent Document 5, a first wafer 604 and a second substrate 620 are arranged in an array, with a pressure-sensitive element wafer 602 in which the pressure-sensitive element substrates 618 are arranged in an array, and the first substrate 616 arranged in an array. This is a method of manufacturing a plurality of piezoelectric devices 600 by superposing three wafers of the arranged second wafers 606 and performing anodic bonding and cutting at positions corresponding to the edges of the piezoelectric devices 600. In Patent Document 5, in order to alleviate the thermal distortion generated in each wafer due to anodic bonding, the cross section is beveled at a position corresponding to the edge of the piezoelectric device 600 on the non-bonding surface of the first wafer 604 and the second wafer 606. A groove 610 having a shape (half-cut) is formed by a dicing blade 612 for half-cutting (FIG. 21A), three layers are laminated by anodic bonding (FIG. 21B), and then along the groove 610. Full-cutting is performed by a full-cut dicing blade 614 (FIG. 21C), and as shown in FIG. 21D, a three-layer structure of a first substrate 616, a pressure-sensitive element substrate 618, and a second substrate 620 is obtained. The piezoelectric device 600 having the above is singulated.

JP 2010-230401 A JP 2010-243207 A JP 2007-325250 A JP 2009-0665520 A JP 2006-157872 A

  However, when the piezoelectric device is diced by dicing the three-layer mother board (wafer) as described above, vibration due to dicing is transmitted to the junction between adjacent layers, and the junction There was a problem that peeling might occur. In addition, there is a problem that damage due to chipping may occur at the cutting position of the piezoelectric device along with the peeling. Furthermore, there is a problem that the pressure sensitive element itself may be damaged by vibration of dicing.

  On the other hand, in order to avoid the above-described problem of peeling between the substrates, it is possible to separate the substrates constituting the piezoelectric device by dicing and then stack the substrates. However, when the substrates are separated after being separated into individual pieces, alignment between the substrates becomes difficult, and there is a problem that the yield of manufacturing the piezoelectric device is lowered.

  Therefore, the present invention pays attention to the above-mentioned problems, eliminates the problems that occur when piezoelectric devices are separated from stacked wafers, and increases the productivity, the yield rate, and the reliability of the bonding surface between the substrates. An object of the present invention is to provide a laminated structure of a wafer, a piezoelectric device, a piezoelectric module, and a method for manufacturing a piezoelectric device.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following application examples.
[Application Example 1] Forming a first wafer having a plurality of first substrates arranged apart from each other and first beams connecting the adjacent first substrates, and spaced apart from each other A piezoelectric vibration wafer having a plurality of piezoelectric vibration substrates arranged and stacked on the first substrate, and a second beam connected to the adjacent piezoelectric vibration substrates and stacked on the first beam. Forming a plurality of piezoelectric devices formed by stacking the first substrate and the piezoelectric vibrating substrate by stacking the piezoelectric vibrating wafer on the first wafer; and Cutting the beam and the second beam to singulate the piezoelectric device into individual pieces.

  In the above method, the first beam and the second beam are arranged between the piezoelectric devices arranged in an array. Therefore, the dicing blade used for dicing can be run along the gap between the piezoelectric devices, and the first beam and the second beam can be cut to separate the piezoelectric devices.

  At this time, the first beam and the second beam can be designed to be sufficiently narrower than the width of the first substrate and the piezoelectric vibration substrate, respectively. Therefore, the contact cross-sectional area at the time of cutting with the 1st wafer of a dicing blade and a piezoelectric vibration wafer can be made small. Therefore, it is possible to mass-produce piezoelectric devices having a high yield by suppressing vibrations generated by dicing and preventing delamination between layers and damage of the vibration part. Further, since the first substrate and the piezoelectric vibration substrate are not diced, chipping of each substrate during dicing can be avoided.

Application Example 2 The piezoelectric vibration substrate includes a pressure-sensitive portion that detects a physical quantity, and a plurality of second substrates that are stacked on the piezoelectric vibration substrate and have a diaphragm that transmits an external force to the pressure-sensitive portion. A step of forming a second wafer that is arranged spaced apart from each other, and the adjacent second substrates are connected by a third beam, and a step of laminating the second wafer on the piezoelectric vibration wafer. A method for manufacturing a piezoelectric device according to Application Example 1, wherein:
By the above method, a piezoelectric device capable of measuring a physical quantity such as pressure can be manufactured.

  Application Example 3 The first beam, the second beam, and the third beam are arranged at positions that overlap each other in the stacking direction, and the second beam includes the first beam, The method for manufacturing a piezoelectric device according to Application Example 2, wherein the piezoelectric device is sandwiched between the third beam and joined to the first beam and the third beam.

  With the above configuration, the adhesive that forms the adhesive layer between the substrates is prevented from flowing out to the side surface of the piezoelectric device, and the variation in the characteristics of the vibration part due to the variation in the stress distribution of the entire piezoelectric device due to the outflowed adhesive is prevented. It is possible to suppress the variation in characteristics of the piezoelectric device.

  Application Example 4 A wafer laminated structure in which a plurality of piezoelectric devices each including a first substrate and a piezoelectric vibration substrate are arranged, wherein the plurality of first substrates are arranged apart from each other and are adjacent to each other. A first wafer in which one substrate is connected by a first beam, and a piezoelectric vibration wafer in which a plurality of the piezoelectric vibration substrates are arranged apart from each other and adjacent piezoelectric vibration substrates are connected by a second beam. And a plurality of the piezoelectric devices are configured by laminating the piezoelectric vibration wafer on the first wafer, and the piezoelectric devices are arranged in a state where the plurality of piezoelectric devices are separated from each other, A laminated structure of a wafer, wherein the adjacent piezoelectric devices are connected by the first beam and the second beam.

  For the same reason as in Application Example 1, a laminated structure of a wafer capable of mass-producing piezoelectric devices with a high yield can be achieved by suppressing vibration generated by dicing to prevent delamination between layers and damage to the vibration part. . In addition, since the first substrate and the piezoelectric vibration substrate are not diced, a laminated structure of wafers that can avoid chipping of each substrate during dicing is obtained.

Application Example 5 The piezoelectric vibration substrate has a pressure-sensitive portion that detects a physical quantity, and the piezoelectric vibration wafer is laminated on the piezoelectric vibration substrate, and transmits a force from the outside to the pressure-sensitive portion. Application example 4 characterized in that a second wafer having a plurality of second substrates are arranged so as to be spaced apart from each other, and a second wafer is formed by connecting adjacent second substrates with a third beam. Wafer stacking structure.
With the above configuration, a laminated structure of wafers capable of manufacturing a piezoelectric device capable of measuring a physical quantity such as pressure is obtained.

Application Example 6 The first beam, the second beam, and the third beam are arranged at positions overlapping each other in the stacking direction, and the second beam includes the first beam and the first beam. The laminated structure of a wafer according to Application Example 5, wherein the wafer is sandwiched between a third beam and bonded to the first beam and the third beam.
For the same reason as in Application Example 3, a laminated structure of wafers capable of suppressing variations in characteristics of the piezoelectric device is obtained.

  Application Example 7 A piezoelectric device having a first substrate and a piezoelectric vibration substrate laminated on the first substrate, wherein a first protrusion is disposed on a side surface of the first substrate, and the piezoelectric device A piezoelectric element characterized in that a second convex portion is disposed at a position facing the first convex portion on a side surface of the vibration substrate, and the second convex portion is laminated on the first convex portion. device.

  With the above configuration, the first convex portion and the second convex portion are arranged so as to overlap each other, so that each convex portion can be used as a mark for alignment in stacking, and stacking can be performed easily. It becomes a possible piezoelectric device.

Application Example 8 The piezoelectric vibration substrate includes a pressure-sensitive portion that detects a physical quantity, and a second substrate having a diaphragm that transmits an external force to the pressure-sensitive portion is laminated. The piezoelectric device according to Application Example 7.
With the above configuration, the piezoelectric device can measure a physical quantity such as pressure.

  [Application Example 9] A piezoelectric module formed by mounting the piezoelectric device according to Application Example 7 or 8 on a mounting substrate, wherein the piezoelectric device is supported by a bonding member at an outer central portion of the first substrate. A piezoelectric module characterized by comprising:

  In the above configuration, a stress such as thermal strain is generated between the bonding member and the first substrate, and this stress is relaxed as it propagates through the member constituting the piezoelectric device. When the piezoelectric device is mounted on the central portion of the first substrate in a single-point support state, the path from the position where the bonding member of the first substrate is disposed to the vibrating portion is the longest. Therefore, the piezoelectric module is capable of efficiently relieving stress and reducing adverse effects on the vibration part.

Application Example 10 The piezoelectric module according to Application Example 9, wherein a circuit that is electrically connected to the piezoelectric device is mounted.
With the above configuration, a piezoelectric module having a function as an oscillator that oscillates by itself or a function as a physical quantity sensor that measures a physical quantity such as pressure by itself can be constructed.

1 is an exploded perspective view of a laminated structure of a wafer according to a first embodiment, and a perspective view of a piezoelectric device (lower right in the drawing) of the first embodiment obtained by laminating the wafer and then dividing it into individual pieces. It is an expansion perspective view of the piezoelectric device of a 1st embodiment. FIG. 3 is an exploded perspective view of FIG. 2. FIG. 4A is a detailed view of an excitation electrode constituting the piezoelectric device, FIG. 4A is a top view (partially enlarged view of FIG. 2), and FIG. 4B is a bottom view. It is the sectional view on the AA line of FIG. 3 is a cross-sectional view taken along line B-B in FIG. 2, FIG. 6A is a cross-sectional view of the first substrate, the piezoelectric element substrate, and the second substrate, and FIG. 6B is an enlarged view of the piezoelectric element substrate in FIG. FIG. FIGS. 7A and 7B are schematic diagrams when dicing is performed in the wafer laminated structure of the first embodiment, in which FIG. 7A is before dicing and FIG. 7B is after dicing. It is the exploded perspective view of the laminated structure of the wafer of 2nd Embodiment, and the perspective view of the piezoelectric device (lower right in the figure) of 2nd Embodiment obtained by laminating and laminating this. It is an expansion perspective view of the piezoelectric device of 2nd Embodiment. FIG. 10A is a schematic view when a folding portion is formed in the wafer laminated structure of the present embodiment, and FIG. 10A is a plan view of each folding portion of the first wafer, the piezoelectric vibration wafer, and the second wafer. FIG. 10B is a side view of each break-up portion when the first wafer, the piezoelectric vibration wafer, and the second wafer are stacked. FIGS. 11A and 11B are schematic views when the electronic device according to the present embodiment is mounted on a mounting substrate, in which FIG. 11A is a perspective view and FIG. 11B is a side view. In the laminated structure of a wafer and a piezoelectric device of this embodiment, an exploded perspective view when an AT-cut vibrating piece is used as a vibrating portion and a perspective view of a piezoelectric device (lower right in the figure) are shown. Also, a perspective view of the lower surface of the piezoelectric vibration substrate is shown in the upper left in the figure. In the piezoelectric device of this embodiment, it is an exploded perspective view when a tuning fork type vibration piece is used as a vibrating part, and a schematic view of the lower surface of the piezoelectric vibration substrate. In the piezoelectric device of this embodiment, it is an exploded perspective view at the time of using an AT cut vibration piece as a vibration part, and a schematic diagram of the lower surface of a piezoelectric vibration substrate. It is a systematic diagram at the time of mounting the piezoelectric device of this embodiment in a fuel cell system. It is a block diagram at the time of mounting the piezoelectric device of this embodiment in the information recording device for vehicles. It is a schematic diagram at the time of mounting the piezoelectric device of this embodiment in a side collision detection apparatus. FIG. 18A is a schematic diagram of a pressure sensor described in Patent Document 1, FIG. 18A is an exploded perspective view, and FIG. 18B is a cross-sectional view. FIG. 19A is a schematic diagram of a pressure sensor described in Patent Document 2, FIG. 19A is an exploded perspective view, and FIG. 19B is a top view. FIG. 20 is a diagram illustrating a manufacturing process of a piezoelectric device having a three-layer structure described in Patent Document 3, wherein FIG. 20A illustrates a process prior to wafer lamination, FIG. 20B illustrates a wafer lamination process, and FIG. c) is a process of singulation. FIG. 21 is a diagram illustrating a manufacturing process of a piezoelectric device having a three-layer structure described in Patent Document 5, in which FIG. 21A is a groove forming process, FIG. 21B is a stacking process, and FIG. 21C is an individualization process. FIG. 21 (d) is an exploded perspective view of the piezoelectric device of FIG. 21 (c).

  Hereinafter, the present invention will be described in detail with reference to embodiments shown in the drawings. However, the components, types, combinations, shapes, relative arrangements, and the like described in this embodiment are merely illustrative examples and not intended to limit the scope of the present invention only unless otherwise specified. .

  In the first embodiment, first, a configuration of a piezoelectric device will be described, and then a laminated structure of a wafer for manufacturing a plurality of piezoelectric devices will be described. FIG. 2 shows an enlarged perspective view of the piezoelectric device of the first embodiment. 3 is an exploded perspective view of FIG. 2, and FIG. 5 is a sectional view taken along line AA of FIG.

  The piezoelectric device 10 according to the first embodiment includes a first substrate 14, a piezoelectric vibration substrate 26 having a pressure-sensitive portion (vibration portion 34 </ b> A, vibration portion 34 </ b> B, first base portion 36, second base portion 38), and a diaphragm 56. The diaphragm 56A and the second substrate 48 that transmits the force associated with the pressure applied to the diaphragm 56 to the vibration part 34B are stacked in this order, and a part of the wall surface becomes the diaphragm 56 after being stacked. A package 12 having an internal space 13 (FIG. 5) is formed. In the internal space 13, a vibrating part 34 </ b> A and a vibrating part 34 </ b> B connected to the diaphragm 56 are arranged. Then, the diaphragm 56 is bent and deformed by an external pressure, and the vibration part 34A and the vibration part 34B receive the force accompanying the bending deformation, whereby the resonance frequencies of the vibration part 34A and the vibration part 34B change. Therefore, the external pressure can be measured by monitoring the change in the resonance frequency of the vibration part 34A and the vibration part 34B. The first substrate 14, the piezoelectric vibration substrate 26, and the second substrate 48 are each formed of a rectangular quartz substrate having a short side and a long side.

  As shown in FIGS. 3 and 5, the first substrate 14 constitutes the lowermost layer of the piezoelectric device 10. A recess 16 (FIGS. 3 and 5) is disposed on the surface of the first substrate 14 facing the piezoelectric vibration substrate 26. The concave portion 16 is disposed at a position facing a vibration portion 34A, a vibration portion 34B, a first base portion 36, a second base portion 38, and support portions 40A and 40B, which will be described later, constituting the piezoelectric vibration substrate 26. Interference with the substrate 14 is prevented. In the first substrate 14, an outer peripheral portion 18 (FIGS. 3 and 5) is disposed so as to surround the periphery of the concave portion 16. The outer peripheral portion 18 is arranged so as to be biased toward one short side of the first substrate 14. Further, a frame portion 28 which will be described later constituting the piezoelectric vibration substrate 26 is laminated on the outer peripheral portion 18. On the other hand, the other short side of the first substrate 14 is a base portion 22 (FIGS. 3 and 5), and a connecting portion 32 described later is laminated.

  A plurality of first protrusions 24 are formed on the side surface of the first substrate 14. The first protrusions 24 are arranged one on each of the two side surfaces forming the long side of the first substrate 14 and one on the side surface forming one short side. And the 1st convex part 24 arrange | positioned at a long side is formed by cutting | disconnecting the below-mentioned 1st beam 68A by dicing, and the 1st convex part 24 arrange | positioned at a short side is below-mentioned 1st convex part 24. It is formed by cutting one beam 68B by dicing.

  The piezoelectric vibration substrate 26 has an X-axis of an orthogonal coordinate system composed of an X-axis as an electric axis, a Y-axis as a mechanical axis, and a Z-axis as an optical axis, which are crystal axes of quartz, as rotation axes. A quartz substrate having a principal surface with the Z 'axis rotated about 2 degrees in the + Y axis direction as the Z' axis and the Z 'axis as a normal line is used. The piezoelectric vibration substrate 26 is provided with a frame portion 28 (FIGS. 3 and 5) having a rectangular frame shape. The frame portion 28 is disposed on one short side of the piezoelectric vibration substrate 26 and is stacked on the outer peripheral portion 18. On the other hand, a connection portion 32 is disposed on the other short side of the piezoelectric vibration substrate 26. The frame portion 28 and the connection portion 32 are arranged side by side in the long side direction of the piezoelectric vibration substrate 26.

  And in the frame part 28, a pressure sensitive part (vibration part 34A, vibration part 34B, 1st base part 36, 2nd base part 38) and support part 40A, 40B (FIG. 3, FIG. 5) are arrange | positioned. The vibration part 34A and the vibration part 34B are each formed by a columnar beam having a longitudinal direction in the long side direction of the piezoelectric vibration substrate 26, and are arranged so as to be parallel to each other. The vibration part 34A and the vibration part 34B form a double tuning fork type. The vibration piece is formed. That is, the columnar beam extends along the long side of the piezoelectric vibration substrate 26, and this is the longitudinal direction. The first base 36 is connected to one of the longitudinal ends of the vibrating portions 34A and 34B, and the second base 38 is connected to the other. Further, from the position facing the first base portion 36 on the inner side surface in the long side direction of the frame portion 28, the support portion 40A extends so as to sandwich the first base portion 36 from the short side direction of the piezoelectric vibration substrate 26, and the first base portion 36. Similarly, from the position facing the second base portion 38 on the inner side surface in the long side direction of the frame portion 28, the support portion 40 </ b> B extends so as to sandwich the second base portion 38 from the short side direction of the piezoelectric vibration substrate 26. Connected to the base 38. Therefore, the vibration part 34A and the vibration part 34B are supported by the frame part 28 via the first base part 36, the second base part 38, the support part 40A, and the support part 40B.

  The first base portion 36 and the second base portion 38 support the vibration portion 34A and the vibration portion 34B, but receive force from force transmission portions 54A and 54B, which will be described later, in the long side direction of the piezoelectric vibration substrate 26. The relative positions are changed with respect to each other. Therefore, stress can be applied to the vibration part 34A and the vibration part 34B by the change in the relative position. The support part 40 </ b> A and the support part 40 </ b> B are members that have a longitudinal direction in the short side direction of the piezoelectric vibration substrate 26 and bend in the long side direction of the piezoelectric vibration substrate 26. Accordingly, the support portions 40A and 40B support the first base portion 36 and the second base portion 38, respectively, but do not interfere with the displacement of the first base portion 36 and the second base portion 38.

  On the other hand, an excitation electrode 96 and an excitation electrode 98 that are insulated from each other are disposed in the vibration part 34A and the vibration part 34B, respectively. In the connection portion 32, pad electrodes 42A and 42B are arranged. The pad electrodes 42A and 42B are disposed so as to be insulated from each other at the connection portion 32.

  An extraction electrode 44A is extracted from the excitation electrode 96 disposed on the vibration part 34A and the vibration part 34B, and is connected to the pad electrode 42A through the first base 36, the support part 40A, the frame part 28, and the connection part 32. Is done. An extraction electrode 44B is extracted from the excitation electrode 98 disposed on the vibration part 34A and the vibration part 34B, and is connected to the pad electrode 42B via the first base 36, the support part 40A, the frame part 28, and the connection part 32. .

  4A and 4B are detailed views of the excitation electrodes constituting the piezoelectric device. FIG. 4A is a top view (partially enlarged view of FIG. 2), and FIG. 4B is a bottom view. For the sake of explanation, the surface that is viewed from FIG. 4A is referred to as the upper surface, and the surface that is viewed from FIG. 4B is referred to as the lower surface. As shown in FIG. 4, the excitation electrode 96 includes electrodes 96a to 96p, and the excitation electrode 98 includes electrodes 98a to 98p.

  As shown in FIG. 4A, the electrode 96a is disposed on the outer side surface of the vibrating portion 34A on the first base portion 36 side, and is connected to the extraction electrode 44A. The electrode 96a is connected to an electrode 96b disposed on the upper surface of the central portion of the vibration part 34A and an electrode 96c disposed on the inner side surface of the vibration part 34A on the first base 36 side. The electrode 96c is connected to an electrode 96d disposed on the upper surface of the first base portion 36, and the electrode 96d is connected to an electrode 96e disposed on the upper surface of the vibrating portion 34B on the first base portion 36 side.

  As shown in FIG. 4B, the electrode 96a is connected to the electrode 96f disposed on the lower surface of the first base portion 36, and the electrode 96f is an electrode disposed on the lower surface of the vibrating portion 34B on the first base portion 36 side. It is connected to 96g. The electrode 96g is connected to the electrode 96h disposed on the outer side surface of the central portion of the vibrating portion 34B and the electrode 96i disposed on the inner side surface of the central portion of the vibrating portion 34B.

  As shown in FIG. 4A, the electrode 96h and the electrode 96i are connected to the electrode 96j disposed on the upper surface of the vibrating portion 34B on the second base portion 38 side, and the electrode 96j is disposed on the upper surface of the second base portion 38. Connected to the electrode 96k. The electrode 96k is connected to an electrode 96l disposed on the outer side surface of the vibrating portion 34A on the second base portion 38 side.

  As shown in FIG. 4B, the electrode 96l includes an electrode 96m disposed on the lower surface of the central portion of the vibration part 34A, and an electrode 96n disposed on the inner side surface of the vibration part 34A on the second base 38 side. It is connected. The electrode 96n is connected to the electrode 96o disposed on the lower surface of the second base portion 38, and the electrode 96o is connected to the electrode 96p disposed on the lower surface of the vibrating portion 34B on the second base portion 38 side. Therefore, the excitation electrode 96 is formed by being electrically connected from the electrode 96a to the electrode 96p.

  As shown in FIGS. 4A and 4B, the electrode 98a is disposed on the outer side surface of the vibrating portion 34B on the first base portion 36 side, and is connected to the extraction electrode 44B. As shown in FIG. 4A, the electrode 98a includes an electrode 98d disposed on the upper surface of the central portion of the vibration part 34B, and an electrode disposed on the inner side surface of the vibration part 34B on the first base 36 side. 98e. As shown in FIG. 4A, the electrode 98b is disposed on the upper surface of the first base portion 36 and is connected to the extraction electrode 44B. The electrode 98b is connected to an electrode 98c disposed on the upper surface of the vibrating portion 34A on the first base portion 36 side.

  As shown in FIG. 4B, the electrode 98e is connected to the electrode 98f disposed on the lower surface of the first base portion 36, and the electrode 98f is an electrode disposed on the lower surface of the vibrating portion 34A on the first base portion 36 side. 98g connected. The electrode 98g is connected to an electrode 98h disposed on the outer side surface of the central portion of the vibrating portion 34A and an electrode 98i disposed on the inner side surface of the central portion of the vibrating portion 34A.

  As shown in FIG. 4A, the electrode 98h and the electrode 98i are connected to the electrode 98j disposed on the upper surface of the vibrating portion 34A on the second base portion 38 side, and the electrode 98j is disposed on the upper surface of the second base portion 38. Connected to the electrode 98k. The electrode 98k is connected to an electrode 98l disposed on the inner side surface of the vibrating portion 34B on the second base portion 38 side.

  As shown in FIG. 4B, the electrode 98l includes an electrode 98m disposed on the lower surface of the central portion of the vibration part 34B and an electrode 98n disposed on the outer side surface of the vibration part 34B on the second base 38 side. It is connected. The electrode 98n is connected to the electrode 98o disposed on the upper surface of the second base portion 38, and the electrode 98o is connected to the electrode 98p disposed on the lower surface of the vibrating portion 34A on the second base portion 38 side. Therefore, the excitation electrode 96 is formed by being electrically connected from the electrode 96a to the electrode 96p.

  Therefore, on the first base 36 side of the vibrating portion 34A, the electrode 96a and the electrode 96c face each other in the side surface direction, and the electrode 98c and the electrode 98g face each other in the upper surface / lower surface direction. In the central portion of the vibration part 34A, the electrode 98h and the electrode 98i face each other in the side surface direction, and the electrode 96b and the electrode 96m face each other in the upper surface / lower surface direction. On the second base portion 38 side of the vibrating portion 34A, the electrode 96l and the electrode 96n face each other in the side surface direction, and the electrode 98j and the electrode 98p face each other in the upper surface / lower surface direction.

  On the first base portion 36 side of the vibrating portion 34B, the electrode 98a and the electrode 98e face each other in the side surface direction, and the electrode 96e and the electrode 96g face each other in the upper surface / lower surface direction. In the central portion of the vibration part 34B, the electrode 96h and the electrode 96i face each other in the side surface direction, and the electrode 98d and the electrode 98m face each other in the upper surface / lower surface direction. On the second base 38 side of the vibration part 34B, the electrode 98l and the electrode 98n face each other in the side surface direction, and the electrode 96j and the electrode 96p face each other in the upper surface / lower surface direction.

  Therefore, the excitation electrode 96 faces the side surface direction on the first base portion 36 side and the second base portion 38 side of the vibration portion 34A, and faces the upper surface and the lower surface direction on the central portion of the vibration portion 34A. The excitation electrode 96 faces the upper surface and the lower surface in the first base portion 36 side and the second base portion side of the vibration portion 34B, and faces in the side surface direction in the central portion of the vibration portion 34B.

  On the other hand, the excitation electrode 98 faces the upper surface / lower surface direction on the first base portion 36 side and the second base portion 38 side of the vibration portion 34A, and faces the side surface direction on the center portion of the vibration portion 34A. Further, the excitation electrode 98 faces the side surface direction on the first base portion 36 side and the second base portion 38 side of the vibration portion 34B, and faces the upper surface and the lower surface direction at the center portion of the vibration portion 34B.

  The excitation electrode 96 is electrically connected to the pad electrode 42A via the extraction electrode 44A, and the excitation electrode 98 is electrically connected to the pad electrode 42B via the extraction electrode 44B. Therefore, when the excitation electrode 96 and the excitation electrode 98 are disposed in the vibration part 34A and the vibration part 34B as described above, the vibration part 34A and the vibration part 34B are applied to the pad electrodes 42A and 42B by applying an alternating voltage. Vibrates at the resonance frequency of. The arrangement pattern of the excitation electrode 96 and the excitation electrode 98 on the vibration part 34A and the vibration part 34B is not limited to the above-described method, and various patterns can be used.

  Here, when the first base portion 36 and the second base portion 38 receive a force that displaces in the long side direction of the piezoelectric vibration substrate 26, the vibration portions 34 </ b> A and the vibration portion 34 </ b> B receive a tensile stress, and therefore the resonance frequency. On the contrary, when receiving a force that is displaced in a direction approaching each other, the vibration part 34A and the vibration part 34B are subjected to compressive stress, and therefore the resonance frequency is lowered.

  A plurality of second convex portions 46 are formed on the side surface of the piezoelectric vibration substrate 26. The second convex portions 46 are arranged one on each of the two side surfaces forming the long side of the piezoelectric vibration substrate 26 (the long side of the frame portion 28) and one on the two side surfaces forming the short side. . In addition, the 2nd convex part 46 arrange | positioned at a long side is formed by cutting | disconnecting the below-mentioned 2nd beam 72A by dicing, and the 2nd convex part 46 arrange | positioned at a short side is the below-mentioned 2nd convex part 46. The beam 72B is cut by dicing. The second convex portion 46 is laminated on the first convex portion 24.

  As shown in FIGS. 3 and 5, the second substrate 48 is a substrate having a diaphragm 56 that transmits force to the vibrating portion 34 </ b> A and the vibrating portion 34 </ b> B. The second substrate 48 has a recess 50 (FIGS. 3 and 5) on the surface facing the piezoelectric vibration substrate 26. The concave portion 50 is formed at a position facing the vibration portion 34A, the vibration portion 34B, the first base portion 36, the second base portion 38, and the support portions 40A and 40B. An outer peripheral portion 52 (FIG. 5) having an outer shape formed along the periphery of the second substrate 48 is disposed around the concave portion 50 by the concave portion 50, and the outer peripheral portion 52 is formed on the frame portion 28 of the piezoelectric vibration substrate 26. Laminated. Therefore, the connection portion 32 constituting the piezoelectric vibration substrate 26 is exposed to the outside even after the second substrate 48 is laminated.

  On the other hand, a convex force transmitting portion 54A (FIGS. 3 and 5) is disposed at a position facing the first base portion 36 of the recess 50, and a convex force transmitting portion 54B is disposed at a position facing the second base portion 38. (FIGS. 3 and 5) are arranged. After the lamination, the force transmission portion 54A is joined to the first base portion 36, and the force transmission portion 54B is joined to the second base portion 38. Further, the bottom surface of the recess 50 is a diaphragm 56 that is bent and deformed by an external force. The diaphragm 56 transmits external force (pressure) to the pressure sensitive parts (first base part 36, second base part 38, vibration part 34A, vibration part 34B) via the force transmission parts 54A and 54B.

  A third convex portion 58 is arranged on the side surface of the second substrate 48. One third convex portion 58 is disposed on each of the two long sides of the second substrate 48, one on the short side facing the short side of the second substrate 48 facing the connection portion 32. Yes. The third convex portion 58 disposed on the long side is formed by cutting a third beam 76A described later by dicing, and the third convex portion 58 disposed on the short side is a third convex portion described below. The beam 76B is cut by dicing. The third convex portion 58 is stacked on the second convex portion 46.

  Further, a peeling mark 60 (FIGS. 2, 3, and 5) is formed on the short side facing the connection portion 32 of the second substrate 48. As will be described later, the peeling mark 60 is generated when the third beam 76B is formed at a position where the peeling mark 60 is formed and the third beam 76B is peeled off at the time of lamination. The third beam 76B (peeling mark 60) is disposed at a position between the pad electrodes 42A and 42B when viewed from the stacking direction on the side (short side) facing the connection portion 32.

  As shown in FIGS. 3 and 5, the piezoelectric device 10 is formed by laminating a first substrate 14, a piezoelectric vibration substrate 26, and a second substrate 48 in this order. However, as shown in FIG. 5, an adhesive layer 62 made of an adhesive is formed between the substrates. At this time, the outer peripheral portion 18 of the first substrate 14 and the frame portion 28 of the piezoelectric vibration substrate 26 are joined, and the base portion 22 and the connecting portion 32 are joined. The frame portion 28 of the piezoelectric vibration substrate 26 is joined to the outer peripheral portion 52 of the second substrate 48, the first base portion 36 is joined to the force transmission portion 54A, and the second base portion 38 is joined to the force transmission portion 54B. The second convex portion 46 is joined to the first convex portion 24 and the third convex portion 58 so as to be sandwiched between the first convex portion 24 and the third convex portion 58.

  In the case of such a laminated structure, it is preferable to design so that the joint surfaces of these components are not exposed after lamination. Accordingly, the adhesive forming the interlayer adhesive layer 62 is prevented from flowing out to the side surface of the piezoelectric device 10, and the vibration part 34 </ b> A and the vibration part are caused by the variation in the stress distribution of the entire piezoelectric device 10 due to the flowed adhesive. The variation in the characteristics of 34B can be suppressed, and the variation in the characteristics of the piezoelectric device 10 can be suppressed.

  Then, by laminating the respective substrates as described above, the package 12 having the internal space 13 is formed, the diaphragm 56 is disposed on the upper surface, and the connection portion 32 (pad electrode) is provided at the position where the piezoelectric vibration substrate 26 is exposed. 42A and the pad electrode 42B) are provided. Therefore, for example, by setting the internal space 13 to a vacuum, the piezoelectric device 10 capable of measuring a pressure based on the vacuum is obtained.

  In the above configuration, when a pressure is applied to the diaphragm 56, the diaphragm 56 is bent and deformed toward the inner space 13 side. As a result, the force transmitting portions 54A and 54B are displaced in a direction away from each other, and force is applied in a direction away from each other to the first base 36 connected to the force transmitting portion 54A and the second base 38 connected to the force transmitting portion 54B. receive. Therefore, a tensile stress is applied to the vibration part 34A and the vibration part 34B, and the resonance frequency of the vibration part 34A and the vibration part 34B increases. Therefore, the piezoelectric device 10 can detect the pressure applied to the diaphragm 56 by monitoring the amount of change in the resonance frequency of the vibration part 34A and the vibration part 34B.

  In the present embodiment, the vibration unit is configured by two columnar beams (the vibration unit 34A and the vibration unit 34B). However, the vibration unit may be configured by one columnar beam (single beam). Thereby, since the force applied from the first base portion 36 and the second base portion 38 to the columnar beam is increased, the amount of change in the resonance frequency is increased, and the sensitivity of the piezoelectric device 10 can be improved. Further, the vibration part can be constituted by two or more columnar beams. In this case, by providing symmetry to the vibration of each columnar beam, vibration leakage can be suppressed and the piezoelectric device 10 having a high Q value can be obtained. When the number of columnar beams is two as in the present embodiment, the pair of vibrating beams become symmetrically vibrated by vibrations such that the longitudinal centers of the columnar beams are separated from each other and approach each other. Leakage can be suppressed.

  FIG. 1 shows an exploded perspective view of the laminated structure of the wafer of the first embodiment and a perspective view of the piezoelectric device (lower right in the figure) of the first embodiment obtained by laminating and stacking the wafer. The wafer stack structure 64 of the present embodiment includes a first wafer 66 in which the first substrates 14 are arranged in an array, and a piezoelectric vibration wafer 70 in which the piezoelectric vibration substrates 26 are arranged in an array and stacked on the first wafer 66. And a second wafer 74 arranged in an array and stacked on the piezoelectric vibration wafer 70. Then, as shown in FIG. 1, dicing is performed by a dicing blade 94 (see FIG. 7) with a dicing region (D) in a range surrounded by a two-dot chain line with respect to the laminated structure 64 of the wafer. The piezoelectric device 10 can be singulated.

  The first wafer 66 is formed of a quartz substrate having the same thickness as the first substrate 14, and the first substrate 14 is arranged in an array, and the first substrate 14 adjacent to each other is connected to the first beams 68 </ b> A and 68 </ b> B. It is formed by piercing the quartz substrate so as to be connected. Here, in the mutually adjacent 1st board | substrates 14, it connects with the 1st beam 68A in the position where the long sides of the 1st board | substrate 14 oppose, and it is 1st in the position where the short sides of the 1st board | substrate 14 oppose. Are connected by a beam 68B.

  The piezoelectric vibration wafer 70 has a main surface having the above-mentioned Z ′ axis as a normal line, and is formed of a quartz substrate having the same thickness as the piezoelectric vibration substrate 26. The piezoelectric vibration substrates 26 are arranged in an array, and the piezoelectric vibration substrates 26 adjacent to each other are formed so as to penetrate through the quartz crystal substrate so as to be connected by the second beams 72A and 72B. Here, in the piezoelectric vibration substrates 26 adjacent to each other, the piezoelectric vibration substrate 26 is connected by the second beam 72A at a position where the long sides of the piezoelectric vibration substrate 26 face each other, and at a position where the short sides of the piezoelectric vibration substrate 26 face each other. They are connected by a beam 72B.

  The second wafer 74 is formed of a quartz crystal substrate having the same thickness as the second substrate 48, and the second substrate 48 is arranged in an array, and the second substrate 48 adjacent to each other is connected to the third beams 76A and 76B. It is formed by piercing the quartz substrate so as to be connected. Here, in the second substrates adjacent to each other, the third substrate 76A is connected at the position where the long sides of the second substrate 48 face each other, and the third substrate 48 is connected at the position where the short sides of the second substrate 48 face each other. They are connected by a beam 76B.

  The third beam 76B is dug from the side facing the piezoelectric vibration substrate 26 at a position facing the connecting portion 32 after lamination and a position that becomes a part of a portion that continues to the position and disappears by dicing. Rarely, it is thinner than the second substrate 48 (see the upper left enlarged view in FIG. 1, see FIG. 7). Therefore, when the second wafer 74 is stacked on the piezoelectric vibration wafer 70, a gap 78 (FIG. 7A) is formed between the third beam 76B and the connection portion 32. Thus, the third beam 76B is not stacked on the connection portion 32. Therefore, the degree of freedom of arrangement of the pad electrodes 42A and 42B in the connection portion 32 can be increased.

  A cut 80 is formed in the thickness direction at the connection position of the third beam 76B with the second substrate 48 (see FIG. 7). Therefore, when the first beam 68B, the second beam 72B, and the third beam 76B are diced after the first wafer 66, the piezoelectric vibration wafer 70, and the second wafer 74 are stacked as described later, the third beam 76B can be broken at the notch 80, and the third beam 76B can be separated from the second substrate 48 by vibration of dicing.

  6 is a cross-sectional view taken along line BB in FIG. 2. FIG. 6A is a cross-sectional view of the first substrate, the piezoelectric element substrate, and the second substrate, and FIG. 6B is a piezoelectric view in FIG. The enlarged view of an element substrate is shown. In the present embodiment, it is preferable that the first wafer 66 and the second wafer 74 have an outer shape formed by sandblasting, and the piezoelectric vibration wafer 70 has an outer shape formed by etching.

  The first substrate 14 and the first beams 68A and 68B are ground from both surfaces of a first wafer 66 (see FIG. 1) that serves as a mother substrate of the first substrate 14 to form an outer shape. The second substrate 48 and the third beams 76A and 76B are ground from one side of a second wafer 74 (see FIG. 1) that serves as a mother substrate of the second substrate 48 to form an outer shape. In addition, the third beam 76 </ b> B that faces the connection portion 32 after the lamination is formed thin by sandblasting from the side facing the piezoelectric vibration substrate 26.

  Sandblasting is a method in which particles for grinding such as silica are sprayed onto a target substrate together with air to mechanically grind the substrate, and grinding proceeds in the lateral direction simultaneously with grinding in the depth direction. For example, when a hole is formed in the substrate by sandblasting, a tapered hole whose inner diameter increases from the bottom of the hole toward the opening is formed. For this reason, when the outer shape of the substrate is formed by sandblasting, the side surface of the substrate is formed as a trajectory obtained by moving the tapered hole in one direction, and the normal of the side surface is not orthogonal to the normal line of the substrate. Will do.

  Therefore, as shown in FIG. 6A, when the outer shape of the first substrate 14 is formed by sandblasting from both surfaces of the first wafer 66, the side surface of the first substrate 14 is the side surface of the central portion in the thickness direction. Becomes pointed. The first beams 68A and 68B also have a shape with pointed side surfaces at the central portion in the thickness direction of the first substrate 14.

  In addition, as shown in FIG. 6A, when the outer shape of the second substrate 48 is formed by sandblasting from the surface side of the second wafer 74 facing the piezoelectric vibration substrate 26, The normal line is inclined toward the surface facing the piezoelectric vibration substrate 26. In addition, the third beams 76A and 76B are inclined such that the normals of the side surfaces thereof face the surface facing the piezoelectric vibration substrate 26. The concave portion 16 of the first substrate 14 may be formed by the above-described sandblasting or may be formed by etching. In addition, the recess 50 (diaphragm 56) of the second substrate 48 is formed by sandblasting, and is etched for a short time to remove the residual stress and surface roughness to the recess 50 (diaphragm 56) generated by sandblasting. The surface of the diaphragm 56) is flattened and residual stress is removed.

  The piezoelectric vibrating substrate 26 and the second beams 72A and 72B are etched in accordance with the outer shape of the piezoelectric vibrating wafer 70 (quartz substrate) serving as a mother substrate by using an etching solution such as hydrofluoric acid. It is formed by. On the other hand, since quartz has anisotropy in the etching rate due to the crystal orientation, the etching progress rate differs depending on the etching progress direction. As described above, the piezoelectric vibration substrate 26 of the present embodiment has a direction parallel to the Z ′ axis as a normal to the main surface, and is parallel to the Y ′ axis as can be seen from the cross-sectional view of FIG. The direction is the long side, and the direction parallel to the X axis is the short side. Therefore, in the piezoelectric vibration substrate 26, as shown in FIG. 6B, the side surface facing the −X axis and the side surface facing the + X axis are not flat and a plurality of side surfaces are formed. That is, the side surface of the piezoelectric vibration substrate 26 facing the −X axis is disposed on the first side surface 82 and the second substrate 48 side disposed on the first substrate 14 side with the central portion in the thickness direction of the piezoelectric vibration substrate 26 as a boundary. The second side surface 84 and the second side surface 84 are formed. The normal line of the first side surface 82 is inclined toward the first substrate 14 side, and the normal line of the second side surface 84 is inclined toward the second substrate 48 side.

  Further, on the side surface of the piezoelectric vibration substrate 26 facing the + X axis, the first side surface 86 and the second side surface 88 disposed on the first substrate 14 side with the central portion in the thickness direction of the piezoelectric vibration substrate 26 as a boundary, the second substrate 48 side. A third side surface 90 and a fourth side surface 92 are formed. The first side surface 86 is a side surface disposed closer to the first substrate 14 than the second side surface 88, and the normal line is inclined toward the first substrate 14 side. The second side surface 88 is a side surface having the central portion as a boundary, and the normal line is further inclined toward the first substrate 14 side than the normal line of the first side surface 86. The third side surface 90 is a side surface disposed on the second substrate 48 side relative to the fourth side surface 92, and the normal line is inclined toward the second substrate 48 side. The fourth side surface 92 is a side surface having the central portion as a boundary, and the normal line is further inclined toward the second substrate 48 side than the normal line of the third side surface 90. Therefore, a ridge line that protrudes in the width direction and extends in the + Y′-axis direction is formed by the second side surface 88 and the fourth side surface 92 at the center portion in the thickness direction of the side surface on the + X-axis side of the piezoelectric vibration substrate 26. Therefore, in the present embodiment, the above-described ridge line is formed on the side surface on the + X axis side of the frame portion 28, the vibrating arm 34, the first base portion 36, the second base portion 38, and the second convex portion 46 (second beam 72B). (See FIG. 2, FIG. 3, FIG. 6 (a)).

  As a basic process for manufacturing the piezoelectric device 10 of the present embodiment, first, a plurality of first substrates 14 that are spaced apart from each other, and first beams 68A that connect adjacent first substrates 14 to each other, 68B, and forming the first wafer 66 described above. Further, a plurality of piezoelectric vibration substrates 26 that are disposed apart from each other and are stacked on the first substrate 14 are connected to each other, and the second piezoelectric vibration substrates 26 are connected to each other, and are stacked on the first beams 68A and 68B. A step of forming the above-described piezoelectric vibration wafer 70 having the beams 72A and 72B. Further, a plurality of second substrates 48 that are stacked on the piezoelectric vibration substrate 26 and have diaphragms 56 that transmit external force to the vibration unit 34A and the vibration unit 34B are arranged apart from each other. A step of forming the above-described second wafer 74 connected by the third beams 76A and 76B.

  Then, the piezoelectric wafer 70 is laminated on the first wafer 66 and the second wafer 74 is laminated on the piezoelectric wafer 70, whereby the first substrate 14, the piezoelectric substrate 26, and the second substrate 48 are laminated in this order. The process of forming a plurality of piezoelectric devices 10 to be performed is performed. Finally, the first beam 68A, 68B, the second beam 72A, 72B, and the third beam 76A, 76B are cut, and the piezoelectric device 10 is separated into individual pieces. A plurality of can be manufactured.

  FIG. 7 shows a schematic diagram when dicing is performed in the wafer laminated structure of the first embodiment, FIG. 7A shows before dicing, and FIG. 7B shows after dicing. As shown in FIG. 1, in the laminated structure 64 of the wafer, dicing is performed by a dicing blade 94 in which a range surrounded by a two-dot chain line after lamination is a dicing area (D), whereby a plurality of piezoelectric devices 10 are separated into pieces. Can be Accordingly, as shown in FIGS. 1 and 7A, when dicing (full cut) is performed along the dicing region (D), the first beams 68A and 68B, the second beams 72A and 72B, and the third beams The beams 76A and 76B are diced. As shown in FIG. 7A, when the third beam 76B (first beam 68B, second beam 72B) is diced, it is joined to the second beam 72B of the third beam 76B. The region and the portion where the third beam 76B is formed thin are diced. Therefore, the third beam 76B after dicing is separated from the second beam 72B. Further, since the notch 80 is formed by half dicing or the like in the portion connected to the second substrate 48 of the third beam 76B, as shown in FIG. The third beam 76B is peeled off from the second substrate 48, and a peeling mark 60 is formed on the second substrate 48. Further, the third beam 76B can be broken at the cut 80 even if the third beam 76B does not peel off due to vibration during full cut.

  As described above, in the present embodiment, the first beams 68A and 68B, the second beams 72A and 72B, and the third beams 76A and 76B are arranged between the piezoelectric devices 10 arranged in an array. . Accordingly, the dicing blade 94 used for dicing runs between the piezoelectric devices 10 to cut the first beams 68A and 68B, the second beams 72A and 72B, and the third beams 76A and 76B. 10 can be singulated.

  At this time, a part of the first beam 68 </ b> A is arranged as the first convex part 24 on the long side of the first substrate 14, and a part of the first beam 68 </ b> B is the first convex part 24 as the first convex part 24. It is arranged on the short side of the substrate 14. In addition, a part of the second beam 72A is disposed on the long side of the piezoelectric vibration substrate 26 as the second protrusion 46, and a part of the second beam 72B is a piezoelectric vibration substrate as the second protrusion 46. 26 on the short side. Further, a part of the third beam 76 </ b> B is disposed on the long side of the second substrate 48 as the third convex portion 58. The third beam 76B is separated from the second substrate 48 and the connection portion of the second substrate 48 while being separated from the second substrate 48 by the above-described dicing and the third convex portion 58 on the short side of the second substrate 48. And a portion where a peeling mark 60 is formed on the side surface facing 32.

  In the above configuration, the first beams 68A and 68B, the second beams 72A and 72B, and the third beams 76A and 76B are sufficiently thinner than the widths of the first substrate 14, the piezoelectric vibration substrate 26, and the second substrate 48, respectively. Can be designed as Therefore, the contact cross-sectional area when the dicing blade 94 is cut from the first wafer 66, the piezoelectric vibration wafer 70, and the second wafer 74 can be reduced. Therefore, it is possible to mass-produce the piezoelectric device 10 with a high yield by suppressing vibration generated by dicing to prevent delamination between layers and damage to the vibration part 34A and the vibration part 34B. Further, since the first substrate 14, the piezoelectric vibration substrate 26, and the second substrate 48 are not diced, chipping of each substrate during dicing can be avoided.

  FIG. 8 shows an exploded perspective view of the laminated structure of the wafer of the second embodiment and a perspective view of the piezoelectric device (lower right in the figure) of the second embodiment obtained by laminating and stacking the wafer. FIG. 9 is an enlarged perspective view of the piezoelectric device according to the second embodiment. In the following embodiments, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted unless necessary.

  The wafer stack structure 106 and the piezoelectric device 100 of the second embodiment basically have the same configuration as that of the first embodiment, but the third beam 102 disposed at a position facing the connection portion 32 is connected to the third beam 102. It is laminated | stacked on the part 32 and the 2nd convex part 46, and is arrange | positioned as the extension part 104 in the position which bisects the connection part 32 seeing from the lamination direction. Further, the pad electrodes 42A and 42B are arranged at positions where the extending portion 104 (third beam 102) is sandwiched between the connecting portions 32 when viewed from the stacking direction.

  In the above configuration, the third beam 102 is cut by dicing together with the first beam 68B and the second beam 72B. Then, after dicing, a part of the third beam 102 is disposed as the extension portion 104 between the pad electrodes 42A and 42B. On the other hand, when the piezoelectric device 100 is mounted on the mounting substrate, the wire 126 (see FIG. 11) is connected to the pad electrode, but a conductive adhesive or the like may be applied to the wire 126 to protect the wire connection portion. . At this time, the extending portion 104 disposed in the connection portion 32 is disposed as a barrier between the pad electrodes 42A and 42B (between the conductive adhesives). Therefore, a short circuit between the pad electrodes 42 </ b> A and 42 </ b> B can be prevented by the extending portion 104 arranged in the connection portion 32.

  FIG. 10 shows a schematic diagram of the case where the folding part is formed in the laminated structure of the wafer of this embodiment. FIG. 10A shows the respective folding of the first wafer, the piezoelectric vibration wafer, and the second wafer. FIG. 10B is a side view of each folding portion when the first wafer, the piezoelectric vibration wafer, and the second wafer are stacked. The present embodiment will be described by taking the first embodiment as an example, but can also be applied to the second embodiment. Furthermore, in this embodiment, the case where it applies to the 1st beam 68B, the 2nd beam 72B, and the 3rd beam 76B is demonstrated.

  The first embodiment has been described on the premise that the piezoelectric device 10 is singulated by dicing the first beams 68A and 68B, the second beams 72A and 72B, and the third beams 76A and 76B. However, according to the present embodiment, it is possible to divide into individual pieces by folding.

  As shown in FIG. 10A, the first folding part 108 is arranged on the first beam 68B, the second folding part 110 is arranged on the second beam 72B, and the third The third folding part 112 is disposed on the beam 76B. The first break-off portion 108 can be formed by sandblasting in the width direction and the thickness direction at the center portion of the first beam 68B. The third folded portion 112 can also be formed by sandblasting in the width direction and the thickness direction in the central portion of the third beam 76B. On the other hand, the second folding part 110 can be formed by etching. In other words, the etching in the width direction of the second beam 72B for forming the second folding part 110 is formed simultaneously with the step of forming the outer shape (including the second beam 72B) of the piezoelectric vibration substrate 26 by etching. can do. On the other hand, in order to increase the oscillation efficiency of the vibration part 34A and the vibration part 34B, the columnar beam constituting the vibration part 34A and the vibration part 34B is subjected to half etching that forms grooves from the thickness direction of the columnar beam to reduce the weight of the columnar beam. Is done. This step is performed on both sides of the vibrating portion 34A and the vibrating portion 34B in the thickness direction after forming the outer shape of the piezoelectric vibrating substrate 26. Therefore, the half etching in the thickness direction of the second beam 72B for forming the second folding part 110 can be performed simultaneously with the formation of the groove, and half etching is performed from both sides in the thickness direction of the second beam 72B. Etching can be performed.

  As shown in FIG. 10B, the first folding part 108, the second folding part 110, and the third folding part 112 formed in this manner are overlapped when viewed from the stacking direction. Placed in. Therefore, each folding part can be broken by applying a force to each folding part. Therefore, the first beam 68B, the second beam 72B, and the third beam 76B can be broken without using dicing. Similarly, the first folding part 108 is formed also on the first beam 68A, the second folding part 110 is formed on the second beam 72A, and the third folding part is formed on the third beam 76A. 112 can be formed, and the first beam 68A, the second beam 72A, and the third beam 76A can be broken. Thereby, the piezoelectric device 10 can be separated into pieces. Accordingly, it is possible to efficiently prevent peeling between layers and damage to the vibration part 34A and the vibration part 34B, and to mass-produce the piezoelectric device 10 having a high yield.

  11A and 11B are schematic views when the electronic device of the present embodiment is mounted on a mounting substrate. FIG. 11A is a perspective view and FIG. 11B is a side view. This embodiment will be described by taking the first embodiment as an example. As shown in FIG. 11A, a piezoelectric module 120 in which the piezoelectric device 10 is mounted on a mounting substrate 122 can be configured. As shown in FIG. 11A, the pad electrodes 42 A and 42 B and the connection electrodes 124 A and 124 B on the mounting substrate 122 can be connected by the wire 126.

  As shown in FIG. 11B, a piezoelectric device is obtained by applying a bonding member 128 such as an epoxy-based resin to the central portion of the lower surface of the first substrate 14 and bonding it to the mounting substrate 122 in a single-point support state at this central portion. 10 is mounted on a mounting substrate 122. Further, preferably, a gap is formed between the piezoelectric device 10 (first substrate 14) and the mounting substrate 122 by the bonding member 128. The gap may be filled with a cushioning material 130 made of silicon-based resin or the like.

  In the above configuration, a stress such as thermal strain is generated between the bonding member 128 and the first substrate 14, and this stress is relaxed as it propagates through the piezoelectric device 10. Then, as shown in FIG. 11B, the bonding member 128 of the first substrate 14 is arranged by mounting the piezoelectric device 10 on the mounting substrate 122 in a single-point support state at the center of the lower surface of the first substrate 14. The path from the position to the vibrating part 34A and the vibrating part 34B is the longest. Therefore, stress can be efficiently relieved and adverse effects on the vibration part 34A and the vibration part 34B can be reduced. Therefore, the piezoelectric module 120 is obtained in which the transmission of stress such as thermal strain is eased to reduce the adverse effects on the vibration part 34A and the vibration part 34B. Further, the shock resistance of the piezoelectric module 120 can be enhanced by filling the gap between the piezoelectric device 10 and the mounting substrate 122 with a buffer material 130 such as a silicon-based resin.

  FIG. 12 shows an exploded perspective view and a perspective view of the piezoelectric device (lower right in the figure) when an AT-cut vibrating piece is used as the vibrating portion in the wafer laminated structure and piezoelectric device of this embodiment. Also, a perspective view of the lower surface of the piezoelectric vibration substrate is shown in the upper left in the figure.

  In the above embodiment, the vibrating section 34A and the vibrating section 34B use columnar beams, but as shown in FIG. 12, an AT-cut vibrating piece is applied as the vibrating section 142 of the piezoelectric device 140 of the present embodiment. be able to. Other components are the same as those in the first embodiment, for example. The first base portion 36 and the second base portion 38 are connected to both ends of the vibration portion 142 in the long side direction of the piezoelectric vibration substrate 26 as in the first embodiment. Excitation electrodes 144 </ b> A and 144 </ b> B that excite thickness shear vibration in the AT-cut vibrating piece are disposed on both surfaces of the vibration unit 142.

  The pad electrodes 42A and 42B are arranged in the connection part 32 as in the first embodiment. Among these, the pad electrode 42A is connected to the excitation electrode 144A facing the second substrate 48 (diaphragm 56) via the extraction electrode 146A. The extraction electrode 146A is disposed on the surface of the piezoelectric vibration substrate 26 that faces the second substrate 48, and the pad electrode 42A passes through the first base 36, the support portion 40A, the frame portion 28, and the connection portion 32 from the excitation electrode 144A. Connect to.

  On the other hand, the pad electrode 42B is connected to the excitation electrode 144B facing the first substrate 14 via the extraction electrode 146B. The extraction electrode 146 </ b> B extends from the excitation electrode 144 </ b> B disposed on the surface of the piezoelectric vibration substrate 26 on the first substrate 14 side, and passes through the surface of the second base 38 on the first substrate 14 side and the side of the second base 38. Extending to the surface of the second base 38 on the second substrate 48 side. Then, it passes through the surface of the support portion 40B, the frame portion 28, and the connection portion 32 on the second substrate 48 side, and is drawn out to the connection portion 32 and connected to the pad electrode 42B.

  Therefore, when an AC voltage is applied to the pad electrodes 42A and 42B, the vibration unit 142 resonates the thickness shear vibration at a predetermined resonance frequency by the AC voltage applied to the excitation electrodes 144A and 144B. And since the vibration part 142 receives the tensile stress according to the pressure which the diaphragm 56 received similarly to 1st Embodiment, the resonant frequency changes according to this stress. Therefore, the pressure applied to the diaphragm 56 can be detected by monitoring the change in the resonance frequency.

  In any of the embodiments, the laminated structure of the first wafer 66, the piezoelectric vibration wafer 70, and the second wafer 74 is formed, and then the dicing (or breaking) is performed to separate the piezoelectric device 10 and the like. However, the present invention is not limited to this. That is, in each wafer described above, the first substrate 14, the piezoelectric vibration substrate 26, and the second substrate 48 are separated into individual pieces, and then the first substrate 14, the piezoelectric vibration substrate 26, and the second substrate 48 are stacked to form a piezoelectric device. 10 etc. can be constructed. At this time, since the first convex portion 24, the second convex portion 46, and the third convex portion 58 are arranged so as to overlap each other, each convex portion can be used as a marker for alignment during lamination, Lamination can be performed easily.

  In the above-described piezoelectric module 120, a circuit (integrated circuit, not shown) electrically connected to the piezoelectric device 10 or the like, that is, the vibration unit 34A and the vibration unit 34B (vibration unit 142) are driven, and the vibration unit 34A and the vibration unit are driven. It is possible to mount a circuit (integrated circuit, not shown) that can acquire information on the frequency of 34B (vibration unit 142). Further, in the above-described piezoelectric device 10 or the like, when the second substrate 48 is removed, the vibrating unit 34A and the vibrating unit 34B (vibrating unit 142) can function as an oscillator. Therefore, the piezoelectric module 120 having a function as an oscillator that oscillates by itself or a function as a pressure sensor that measures pressure by itself can be constructed.

  FIG. 13 shows an exploded perspective view and a schematic view of the lower surface of the piezoelectric vibration substrate when a tuning-fork type vibrating piece is used as the vibrating portion in the piezoelectric device of the present embodiment. FIG. 14 shows an exploded perspective view when an AT-cut vibrating piece is used as the vibrating portion in the piezoelectric device of the present embodiment, and a schematic view of the lower surface of the piezoelectric vibrating substrate.

  For example, the present invention can be applied to a piezoelectric device such as a temperature sensor or a piezoelectric vibrator having a structure of three or more layers and including a piezoelectric vibration substrate as an intermediate layer. As the vibration part of the piezoelectric vibration substrate, a tuning fork type vibration piece as shown in FIG. 13 or an AT cut crystal vibration piece as shown in FIG. 14 can be applied. In addition, a quartz resonator using a rotating Y plate obtained by rotating a quartz crystal around the X axis (electrical axis) by a predetermined angle, a quartz resonator cut by other cuts, and a piezoelectric material other than quartz The used piezoelectric vibrator can be widely applied.

  In FIG. 13, the piezoelectric device 11 has a three-layer structure including a first substrate 14 having a recess 16, a piezoelectric vibration substrate 26 having a vibration part 212, and a second substrate 48 having a recess 50. In the piezoelectric vibration substrate 26, the extraction electrode 214A connected to the pad electrode 42A is connected to the excitation electrode 216A disposed in the vibration unit 212, and the extraction electrode 214B connected to the pad electrode 42B is disposed in the vibration unit 212. It is connected to the excitation electrode 216B. Then, by applying an AC voltage to the pad electrodes 42A and 42B, the vibration part 212 bends and vibrates.

  In FIG. 14, the piezoelectric device 11 a has a three-layer structure including a first substrate 14 having a recess 16, a piezoelectric vibration substrate 26 having a vibrating portion 218, and a second substrate 48 having a recess 50. A pad electrode 42A and a pad electrode 42B are disposed on one surface of the piezoelectric vibration substrate 26. In addition, the excitation electrode 222A is disposed on the surface of the vibration unit 218 on which the pad electrode 42A and the like are disposed, and the excitation electrode 22B is disposed on the back surface of the vibration unit 218 so as to face the excitation electrode 22A. The extraction electrode 220A drawn from the excitation electrode 222A is connected to the pad electrode 42A, and the extraction electrode 22B drawn from the excitation electrode 222B is drawn to the surface on which the pad electrode 42B is arranged and connected to the pad electrode 42B. ing. In the above-described configuration, the vibrating portion 218 vibrates through thickness by applying an AC voltage to the pad electrodes 42A and 42B. In FIGS. 13 and 14, the other components are the same as those in the first embodiment except that the force transmitting portion 54A and the force transmitting portion 54B are not formed in the recess 50 of the second substrate 48. Omitted.

  In addition to the above-described piezoelectric module, the piezoelectric device of the present invention is, for example, a mobile phone, a hard disk, a personal computer, a BS and CS broadcast receiving tuner, a coaxial cable, various processing devices for optical signals propagating in optical cables and optical signals. For various electronic devices such as server / network equipment and wireless communication equipment that require high-frequency and high-accuracy clocks (low jitter and low phase noise) over a wide temperature range, various sensor devices such as acceleration sensors and rotational speed sensors Can also be widely applied.

  Examples of such various sensor devices and electronic devices include general industrial measuring devices, electronic blood pressure monitors, electronic devices with altitude / atmospheric pressure / water depth measuring functions, portable devices, automobiles, and the like. As described above, the pressure sensor is used to measure the mechanical deformation of the diaphragm due to external force as an electric signal. The pressure sensor is applied to altitude measurement in a small portable device such as a mobile phone or a personal computer as a microphone. Is available.

  Furthermore, fuel cells such as hydrogen and methanol, which have been attracting attention in recent years, are due to light weight and convenience, for example, video cameras, notebook personal computers, portable telephones, portable information terminals ( Applications of various information processing apparatuses such as personal digital assistants (PDAs), audio players, projector mounting bases, and electronic devices having a communication function of capsule medical devices can be considered as fuel cells.

  FIG. 15 shows a system diagram when the piezoelectric device of the present embodiment is mounted on a fuel cell system. As shown in FIG. 15, the fuel cell system 224 includes a fuel cell 226 that generates power using hydrogen as a fuel, a hydrogen storage alloy container 228 that supplies hydrogen to the fuel cell 226, and the hydrogen storage alloy container 228. And a pressure sensor 230 for pressure detection disposed between the fuel cell 226, a pressure regulating valve 232, and a safety valve 234. In the fuel cell system 224, the piezoelectric device 10 according to the present invention can be used as the pressure sensor 230.

  FIG. 16 shows a block diagram when the piezoelectric device of the present embodiment is mounted on a vehicle information recording apparatus. As shown in FIG. 16, only the necessary time before and after the occurrence of an event such as an accident is recorded by associating and recording the data generated by both the digital tachograph 238 and the drive recorder 248, and provides useful data for subsequent analysis and the like There is a vehicle information recording device 236 that can do this.

  In the vehicle information recording device 236, the digital tachograph 238 includes a traveling state detection unit 240 that detects a traveling state of the vehicle, a digital tachograph communication unit 242 that transmits and receives information between the drive recorder 248, and information. Digital tachograph recording means 244 for recording, and a digital tachograph control section for receiving the driving situation inputted from the driving situation detecting means 240 and the information received from the digital tachograph communication means 242 and recording the information in the digital tachograph recording means 244 However, the piezoelectric device 10 according to the present invention capable of highly accurate pressure (altitude) detection can be applied as a pressure sensor that can be used as the traveling state detection means 240.

  Furthermore, in the activity meter side system for detecting the load on the measurement subject, when the load is detected as a pressure, the pressure sensor (the piezoelectric device 10 or the like) according to the present invention can be applied as a detector.

  In addition, the security system can be set to a warning mode and a non-warning mode, and a human body detection unit capable of detecting at least a part of a human body, and the human body detection unit detecting at least a part of the human body Accordingly, there is a security system that includes an output unit that outputs a signal, and a warning mode setting unit that receives the output signal from the output unit and sets the warning mode. The security system further includes an abnormality detection sensor that detects an intrusion or abnormality from the outside, and an alarm unit that issues an alarm when the abnormality detection sensor detects an abnormality, and the alarm mode setting unit includes the alarm mode In response, the alarm operation by the abnormality detection sensor and the alarm means is activated. A pressure sensor (such as the piezoelectric device 10) according to the present invention can be applied as the abnormality detection sensor constituting the security system.

  Furthermore, the pressure sensor (piezoelectric device 10 or the like) according to the present invention can be provided in the main body of a wristwatch type electronic device that is an example of the electronic device of the present invention, and the pressure sensor has excellent characteristics such as dynamic range and linearity. The electric device includes the piezoelectric device 10 or the like.

  Furthermore, especially in automobiles, for example, intake manifold pressure or charge pressure, brake pressure, air suspension pressure, tire pressure, hydraulic storage pressure, shock absorber pressure, cooling medium pressure, modulation pressure in automatic transmission, brake pressure, tank pressure The pressure sensor (the piezoelectric device 10 or the like) according to the present invention can be applied to the pressure detection.

  FIG. 17 shows a schematic diagram when the piezoelectric device of this embodiment is mounted on a side collision detection apparatus. A side collision detection device 250 that detects an impact applied to the side surface of the vehicle 252 can be configured by the pressure sensor 258 disposed inside the side door 254 of the vehicle 252. In the side collision detection device 250, the pressure sensor 258 has a diaphragm (diaphragm 56) for detecting pressure, and detects that the pressure receiving surface of the diaphragm is distorted due to pressure fluctuation in the internal space 256 of the side door 254. Thus, the impact applied to the side surface of the vehicle 252 can be detected. For example, by setting the angle formed between the normal line of the pressure receiving surface of the diaphragm and the horizontal straight line of the vehicle 252 from 60 degrees to 90 degrees, the diaphragm of the pressure sensor 252 exerts an impact force at the time of a collision. When received, the degree of detecting this as a pressure change is reduced, and the change in pressure can be detected with higher accuracy. As the pressure sensor 250 used in the side collision detection device 250, the piezoelectric device 10 of this embodiment can be applied.

DESCRIPTION OF SYMBOLS 10 ......... Piezoelectric device, 12 ......... Package, 13 ......... Internal space, 14 ......... First substrate, 16 ......... Recess, 18 ......... Outer peripheral part, 22 ...... Base part, 24 ......... First convex portion, 26 ......... Piezoelectric vibration substrate, 28 ......... Frame portion, 32 ......... Connection portion, 34A ......... Vibration portion, 34B ......... Vibration portion, 36 ......... First 1 base, 38 ......... second base, 40A ......... support, 40B ......... support, 42A ......... pad electrode, 42B ......... pad electrode, 44A ...... lead electrode, 44B ......... Extraction electrode 46 ......... second convex portion 48 ......... second substrate 50 ......... concave portion 52 ......... peripheral portion 54A ......... force transmission portion 54B ......... force transmission portion 56 ......... Diaphragm, 58 ......... Third convex portion, 60 ......... Peeling mark, 62 ......... Adhesive layer, 64 ...... Laminated structure, 66 ......... First Yeah, 68A ......... first beam, 68B ......... first beam, 70 ......... piezoelectric vibration wafer, 72A ......... second beam, 72B ......... second beam, 74 ......... Second wafer, 76A ......... Third beam, 76B ......... Third beam, 78 ......... Gap, 80 ......... Incision, 82 ......... First side surface, 84 ......... Second side surface, 86 ......... First side, 88 ......... Second side, 90 ......... Third side, 92 ......... Fourth side, 94 ......... Dicing blade, 96 ......... Excitation electrode, 98 ......... Excitation electrode, 100 .... Piezoelectric device, 102 ... ... Third beam, 104 ... ... Extension part, 106 ... ... Laminated structure, 108 ... ... First folding part, 110 ... ... First 2 folding parts, 112... 3rd folding part, 120... Piezoelectric module, 122. Electrode, 124B ......... Connecting electrode, 126 ......... Wire, 128 ......... Joint member, 130 ...... Buffer material, 140 ......... Piezoelectric device, 142 ...... Vibrating part, 144A ... Excitation electrode, 144B ... Excitation electrode, 146A ... Extraction electrode, 146B ... Extraction electrode, 212 ......... Vibrating part, 214A ... Extraction electrode, 214B ... Extraction electrode, 216A ... Excitation electrode, 216B ......... excitation electrode, 218 ......... vibrating part, 220A ......... extraction electrode, 220B ......... extraction electrode, 222A ......... excitation electrode, 222B ......... excitation electrode, 224 ......... fuel cell system, 226 ......... fuel cell, 228 ......... hydrogen storage alloy container, 230 ......... pressure sensor, 232 ......... pressure regulating valve, 234 ......... safety valve, 236 ......... vehicle information recording device, 238 ... ... Digital tachograph, 240 ......... Running condition detection means, 242 ......... Digital tachograph communication means, 244 ...... Digital tachograph recording means, 246 ......... Digital tachograph control unit, 248 ......... Drive recorder, 250 ... ... Side collision detection device, 252 ......... Vehicle, 254 ......... Side door, 256 ......... Internal space, 258 ......... Pressure sensor, 300 ......... Pressure sensor, 302 ......... First layer, 308 ... ...... Pressure sensitive element layer, 310 ......... Pressure sensitive element, 312 ......... Base, 318 ......... Second layer, 324 ......... Diaphragm, 326 ......... Force transmitting part, 400 ......... Pressure sensor, 401 ......... First layer, 402 ......... Pressure sensitive element layer, 404 ......... Frame portion, 408 ......... Vibrating portion, 410 ......... Pad electrode, 412 ......... Second layer, 414 ......... Notch , 416... Projection, 500... Piezoelectric device, 502... Mother board, 504... Mother board, 506... Mother board, 600. Element wafer, 604... First wafer, 606... Second wafer, 610... Groove, 612... Dicing blade, 614 ... Dicing blade, 616 ... First substrate, 618 ……… Pressure-sensitive element substrate, 620 ……… Second substrate.

Claims (10)

Forming a first wafer having a plurality of first substrates spaced apart from each other and a first beam connecting the adjacent first substrates;
A plurality of piezoelectric vibration substrates disposed apart from each other and stacked on the first substrate; and a second beam connected to the adjacent piezoelectric vibration substrates and stacked on the first beam. Forming a piezoelectric vibrating wafer;
Forming a plurality of piezoelectric devices configured by laminating the first substrate and the piezoelectric vibration substrate by laminating the piezoelectric vibration wafer on the first wafer;
Cutting the first beam and the second beam to singulate the piezoelectric device;
A method for manufacturing a piezoelectric device, comprising: The piezoelectric vibration substrate has a pressure-sensitive part that detects a physical quantity,
A plurality of second substrates stacked on the piezoelectric vibration substrate and having a diaphragm for transmitting external force to the pressure-sensitive portion are arranged apart from each other, and the adjacent second substrates are connected by a third beam. Forming a second wafer,
Laminating the second wafer on the piezoelectric vibrating wafer;
The method for manufacturing a piezoelectric device according to claim 1, comprising: The first beam, the second beam, and the third beam are arranged at positions that overlap each other along the stacking direction,
The second beam is
Sandwiched between the first beam and the third beam;
The method for manufacturing a piezoelectric device according to claim 2, wherein the piezoelectric device is bonded to the first beam and the third beam. A laminated structure of a wafer in which a plurality of piezoelectric devices including a first substrate and a piezoelectric vibration substrate are arranged,
A first wafer in which a plurality of the first substrates are arranged apart from each other, and the adjacent first substrates are connected by a first beam;
A plurality of the piezoelectric vibration substrates are arranged apart from each other, and the piezoelectric vibration substrates adjacent to each other are connected by a second beam,
A plurality of the piezoelectric devices are configured by laminating the piezoelectric vibration wafer on the first wafer,
The piezoelectric device is
A laminated structure of a wafer, wherein the plurality of piezoelectric devices are arranged in a state of being separated from each other, and the adjacent piezoelectric devices are connected by the first beam and the second beam. The piezoelectric vibration substrate has a pressure-sensitive part that detects a physical quantity,
In the piezoelectric vibration wafer,
A second substrate having a diaphragm laminated on the piezoelectric vibration substrate and having a diaphragm for transmitting an external force to the pressure-sensitive portion is arranged apart from each other, and the adjacent second substrates are connected by a third beam. The laminated structure of the wafer according to claim 4, wherein the configured second wafer is laminated. The first beam, the second beam, and the third beam are arranged at positions that overlap each other along the stacking direction,
The second beam is
Sandwiched between the first beam and the third beam,
6. The wafer laminated structure according to claim 5, wherein the wafer laminated structure is joined to the first beam and the third beam. A first substrate;
A piezoelectric device having a piezoelectric vibration substrate laminated on the first substrate,
A first protrusion is disposed on a side surface of the first substrate,
A second convex portion is disposed at a position facing the first convex portion on the side surface of the piezoelectric vibration substrate,
The piezoelectric device is characterized in that the second convex portion is laminated on the first convex portion. The piezoelectric vibration substrate has a pressure-sensitive part that detects a physical quantity,
The piezoelectric device according to claim 7, wherein a second substrate having a diaphragm that transmits an external force to the pressure-sensitive portion is laminated. A piezoelectric module formed by mounting the piezoelectric device according to claim 7 or 8 on a mounting substrate,
The piezoelectric device is
A piezoelectric module, wherein an outer central portion of the first substrate is supported by a bonding member.   The piezoelectric module according to claim 9, further comprising a circuit electrically connected to the piezoelectric device.