JP2012244156A - Manufacturing method of nitride semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor element capable of improving a manufacturing yield.SOLUTION: A manufacturing method of a nitride semiconductor element according to an embodiment comprises the steps of: removing a substrate for growth using a first treatment material of a structure having the substrate for growth, a buffer layer which has a first uneven shape and forms a cavity from and to the substrate for growth, and a nitride semiconductor layer formed on the first uneven shape of the buffer layer after bonding a support substrate to the nitride semiconductor layer side; and forming a second uneven shape in which the first uneven shape was reflected on the nitride semiconductor layer by reducing thicknesses of the buffer layer and the nitride semiconductor layer using a second treatment material different from the first treatment material after removing the substrate for growth.

Description

  Embodiments described herein relate generally to a method for manufacturing a nitride semiconductor device.

  As a method for manufacturing a nitride semiconductor device, there is a technique for crystal growth of a nitride semiconductor layer such as gallium nitride (GaN) on a silicon (Si) substrate that is easy to process. When the nitride semiconductor layer is crystal-grown on the Si substrate, the crystal is grown via a buffer layer formed on the Si substrate. Further, after crystal growth of the nitride semiconductor layer, a support substrate is bonded to the opposite side of the nitride semiconductor layer from the Si substrate, and the Si substrate is removed to reduce the thickness of the nitride semiconductor layer. In such a method of manufacturing a nitride semiconductor device, further improvement in manufacturing yield is desired.

JP 2010-251390 A

  Embodiments of the present invention provide a method of manufacturing a nitride semiconductor device that can improve manufacturing yield.

  The method for manufacturing a nitride semiconductor device according to the embodiment includes a growth substrate, a buffer layer having a first uneven shape that forms a gap between the growth substrate, and the first uneven shape of the buffer layer. A step of removing the growth substrate using a first treatment material after bonding a support substrate to the nitride semiconductor layer side of a structure having a nitride semiconductor layer formed thereon; After removing the growth substrate, the thickness of the buffer layer and the nitride semiconductor layer is reduced using a second processing material different from the first processing material, and the nitride semiconductor layer is formed on the nitride semiconductor layer. Forming a concave second convex shape reflecting the first concave and convex shape.

3 is a flowchart of a method for manufacturing a nitride semiconductor device according to an embodiment. FIG. 3 is a schematic cross-sectional view showing an example of a nitride semiconductor element. It is a typical sectional view which illustrates a part of composition of a semiconductor light emitting element. 3 is a schematic cross-sectional view illustrating a method for manufacturing a nitride semiconductor device. FIG. 3 is a schematic cross-sectional view illustrating a method for manufacturing a nitride semiconductor device. FIG. 3 is a schematic cross-sectional view illustrating a method for manufacturing a nitride semiconductor device. FIG. 3 is a schematic cross-sectional view illustrating a method for manufacturing a nitride semiconductor device. FIG. 3 is a schematic cross-sectional view illustrating a method for manufacturing a nitride semiconductor device. FIG. It is a typical sectional view showing an example of composition of a buffer layer. It is sectional drawing which illustrates the state before and behind a 1st etching process. 3 is a flowchart of a method for manufacturing a nitride semiconductor device according to an embodiment. FIG. 3 is a schematic cross-sectional view showing an example of a nitride semiconductor element. 3 is a schematic cross-sectional view illustrating a method for manufacturing a nitride semiconductor device. FIG. 3 is a schematic cross-sectional view illustrating a method for manufacturing a nitride semiconductor device. FIG. 3 is a schematic cross-sectional view illustrating a method for manufacturing a nitride semiconductor device. FIG. 3 is a schematic cross-sectional view illustrating a method for manufacturing a nitride semiconductor device. FIG. It is an expansion typical sectional view which illustrates a manufacturing method. It is an expansion typical sectional view which illustrates a manufacturing method. It is an expansion typical sectional view which illustrates a manufacturing method. It is an expansion typical sectional view which illustrates a manufacturing method. It is an expansion typical sectional view which illustrates a manufacturing method. It is an expansion typical sectional view which illustrates an embodiment. It is an expansion typical sectional view which illustrates an embodiment. It is an expansion typical sectional view which illustrates an embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio coefficient of the size between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratio coefficient may be represented differently depending on the drawing.
Further, in the present specification and each drawing, the same reference numerals are given to the same elements as those described above with reference to the previous drawings, and detailed description thereof will be omitted as appropriate.

(First embodiment)
FIG. 1 is a flowchart of a method for manufacturing a nitride semiconductor device according to the embodiment.
That is, this manufacturing method includes a first processing step (Step S101) and a second processing step (Step S102).
In the first processing step (step S101), nitriding of a structure having a growth substrate, a buffer layer formed on the growth substrate, and a nitride semiconductor layer formed on the buffer layer is performed. After the support substrate is bonded to the physical semiconductor layer side, the growth substrate is removed using the first processing material.
In the second processing step (step S102), after the growth substrate is removed in the first processing step (step S101), the thicknesses of the buffer layer and the nitride semiconductor layer are different from those of the first processing material. The process which reduces using the process material of 2 is performed.
Here, the process of reducing the thickness of the layer includes a process of removing the layer in addition to a process of reducing the thickness of the layer.
The second treatment material is different from the first treatment material. The second treatment material includes an element not included in the first treatment material, and the first treatment material is the second treatment material. Including any element that is not included.
The first treatment material is, for example, a gas containing at least one of fluorine and sulfur. The first treatment material is a mixed gas further including at least one of fluorine and sulfur and at least one of carbon and argon.
The second treatment material is, for example, a gas containing chlorine. The second treatment material is a mixed gas containing a gas containing chlorine and at least one of carbon and argon.

FIG. 2 is a schematic cross-sectional view showing an example of a nitride semiconductor device manufactured by the manufacturing method according to the embodiment.
In FIG. 2, a semiconductor light emitting device 110a is illustrated as an example of a nitride semiconductor device.

  As shown in FIG. 2, the semiconductor light emitting device 110 a includes an n-type semiconductor layer 10, a p-type semiconductor layer 20, a light emitting layer 30, a p-side electrode 40, and an n-side electrode 50.

  The n-type semiconductor layer 10 and the p-type semiconductor layer 20 include a nitride semiconductor. For example, an n-type GaN layer is used for the n-type semiconductor layer 10. For the p-type semiconductor layer 20, for example, a p-type GaN layer is used.

  The light emitting layer 30 is provided between the n-type semiconductor layer 10 and the p-type semiconductor layer 20.

  The p-side electrode 40 is provided on the first main surface S <b> 1 on the opposite side of the p-type semiconductor layer 20 from the light emitting layer 30. The p-side electrode 40 is in contact with a part of the p-type semiconductor layer 20 (a part of the first main surface S1).

  The n-side electrode 50 is provided on the second main surface S <b> 2 on the side opposite to the light emitting layer 30 of the n-type semiconductor layer 10. The n-side electrode 50 is in contact with a part of the n-type semiconductor layer 10 (a part of the second main surface S2).

  Here, a direction from the p-type semiconductor layer 20 toward the n-type semiconductor layer 10 is defined as a Z-axis direction. One axis perpendicular to the Z axis is taken as the X axis. One axis perpendicular to the Z axis and the X axis is taken as a Y axis. The Z-axis direction corresponds to the stacking direction of the n-type semiconductor layer 10, the light emitting layer 30, and the p-type semiconductor layer 20.

  Here, in the specification of the present application, “stacking” includes not only direct stacking but also stacking with another element inserted therebetween.

  In the stacked body 10s including the n-type semiconductor layer 10, the light emitting layer 30, and the p-type semiconductor layer 20, the first main surface S1 and the second main surface S2 are surfaces opposite to each other.

FIG. 3 is a schematic cross-sectional view illustrating the configuration of a part of the semiconductor light emitting element according to the first embodiment.
FIG. 3 shows an example of the configuration of the light emitting layer 30. The Z-axis direction in FIG. 3 is reversed with respect to the Z-axis direction in FIG.

  As illustrated in FIG. 3, the light emitting layer 30 includes a plurality of barrier layers 31 and a well layer 32 provided between the plurality of barrier layers 31. The plurality of barrier layers 31 and the plurality of well layers 32 are alternately stacked.

  In this example, intermediate layers (n-side intermediate layer 33 and p-side intermediate layer 34) are provided between the barrier layer 31 and the well layer 32, respectively.

  For example, the barrier layer 31 is provided on the n-type semiconductor layer 10. An n-side intermediate layer 33 is provided on the barrier layer 31. A well layer 32 is provided on the n-side intermediate layer 33. A p-side intermediate layer 34 is provided on the well layer 32. The barrier layer 31, the n-side intermediate layer 33, the well layer 32, and the p-side intermediate layer 34 form one set (period). A plurality of sets are stacked. In other words, the light emitting layer 30 can have a multiple quantum well (MQW) structure.

  Alternatively, the light emitting layer 30 may have a single quantum well (SQW) structure. In this case, the above-described group is one and the number of well layers 32 is one.

  At least one of the n-side intermediate layer 33 and the p-side intermediate layer 34 is provided as necessary and may be omitted.

For example, In _x2 Al _y2 Ga _1-x2-y2 N (0 <x2 <1, 0 <y2 <1) is used for the barrier layer 31. For example, In _0.02 Al _0.33 Ga _0.65 N is used for the barrier layer 31. The thickness of the barrier layer 31 is, for example, 11.5 nanometers (nm).

For example, In _x3 Ga _1-x3 N (0 <x3 <1) is used for the n-side intermediate layer 33. For example, In _0.02 Ga _0.98 N is used for the n-side intermediate layer 33. The thickness of the n-side intermediate layer 33 is 0.5 nm, for example.

In _x4 Ga _1-x4 N (0 <x4 <1) is used for the well layer 32. For example, In _0.15 Ga _0.85 N is used for the well layer 32. The thickness of the well layer 32 is, for example, 2.5 nm.

In _x5 Ga _1-x5 N (0 <x5 <1) is used for the p-side intermediate layer 34. For example, In _0.02 Ga _0.98 N is used for the p-side intermediate layer 34. The thickness of the p-side intermediate layer 34 is 0.5 nm, for example.

  In the embodiment, between the plurality of barrier layers 31, at least one of materials and thicknesses used for the plurality of barrier layers 31 may be different from each other in the plurality of barrier layers 31. When a plurality of well layers 32 are provided, at least one of materials and thicknesses used for the plurality of well layers 32 may be different from each other in the plurality of well layers 32. When the plurality of n-side intermediate layers 33 are provided, at least one of the material and the thickness used for the plurality of n-side intermediate layers 33 may be different from each other in the plurality of n-side intermediate layers 33. When the plurality of p-side intermediate layers 34 are provided, at least one of the material and the thickness used for the plurality of p-side intermediate layers 34 may be different from each other in the plurality of p-side intermediate layers 34.

In manufacturing such a semiconductor light emitting device 110a, the stacked body 10s is stacked in the order of, for example, an n-type semiconductor layer 10, a light emitting layer 30, and a p-type semiconductor layer 20.
Here, since the sapphire substrate used for crystal growth of the nitride semiconductor layer is an insulator, a structure in which a p-side electrode and an n-side electrode are provided on the upper surface side of the semiconductor layer (stacked body) is employed. However, in this structure, the series resistance is high. Furthermore, since the thermal conductivity of the sapphire substrate is low, there is room for improvement in heat dissipation particularly at high output.

  Therefore, there is a configuration (thin film type: thin film type) in which the semiconductor layer grown on the sapphire substrate is transferred to a support substrate different from the crystal growth. As the support substrate, an Si substrate having conductivity and high thermal conductivity can be used, so that current can be passed in the stacking direction, and high heat dissipation can be obtained simultaneously with low series resistance.

In order to fabricate a thin film structure, the sapphire substrate is chemically stable, so irradiating the GaN layer with high-energy ultraviolet rays and locally raising the temperature to GaN including the light emitting layer from the sapphire substrate. Laser lift-off techniques are used to delaminate the layers.
In the embodiment, a crystal of a GaN layer is grown on a Si substrate that is easy to process, and the semiconductor light emitting device 110a is manufactured using this.

Hereinafter, an example of a method for manufacturing the semiconductor light emitting device 110a will be described.
4 to 8 are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing a nitride semiconductor device according to the first embodiment.
FIG. 9 is a schematic cross-sectional view showing an example of the configuration of the buffer layer.

As shown in FIG. 4A, the buffer layer 6 a is formed on the growth substrate 5. For example, a Si substrate is used as the growth substrate 5. The growth substrate 5 is, for example, a Si single crystal substrate. The growth substrate 5 is a substrate including a Si single crystal layer. For example, In _x1 Al _y1 Ga _1-x1-y1 N (0 <x1 <1, 0 <y1 <1) is used for the buffer layer 6a. In one example of the embodiment, the buffer layer 6a is AlN. The thickness of the buffer layer 6a is, for example, 100 nm.

  As illustrated in FIG. 9, the buffer layer 6a may have a plurality of stacked structures of a plurality of first buffer layers 61a and a second buffer layer 62a.

For example, In _x6 Al _y6 Ga _1-x6-y6 N (0 <x6 <1, 0 <y6 <1) is used for the first buffer layer 61a. Is used. In an example of the embodiment, the first buffer layer 61a is AlN. The thickness of the first buffer layer 61a is, for example, 10 nm.

For example, In _x7 Al _y7 Ga _1-x7-y7 N (0 <x7 <1, 0 <y7 <1) is used for the second buffer layer 62a. Is used. In the embodiment, the second buffer layer 62a is Al _0.75 Ga _0.25 N. The thickness of the second buffer layer 62a is, for example, 50 nm.

  As shown in FIG. 4A, the n-type semiconductor layer 10, the light emitting layer 30, and the p-type semiconductor layer 20 are sequentially formed on the buffer layer 6a. For forming each of the above layers, for example, a metal organic chemical vapor deposition (MOCVD) method is used.

As shown in FIG. 4B, an insulating film to be the interlayer insulating film 7 is formed on the p-type semiconductor layer 20. For example, a SiO ₂ film is used for the interlayer insulating film 7. For example, a thermal CVD method is used to form the interlayer insulating film 7.

  As shown in FIG. 5A, the interlayer insulating film 7 is processed into a predetermined shape by, for example, photolithography and etching, and the p-side electrode 40 is formed by vapor deposition. For example, the p-side electrode 40 is a metal film including at least one of Ni, Pt, Ag, Ti, Al, In, Au, and the like.

  As shown in FIG. 5B, the first bonding layer 71 is formed so as to cover the interlayer insulating film 7 and the p-side electrode 40. For example, a Ti film, a Pt film, and an Au film to be the first bonding layer 71 are stacked in this order.

  On the other hand, the second bonding layer 72 is formed on the main surface of the support substrate 73 (for example, Si substrate). For example, an Au—Sn film to be the second bonding layer 72 is formed on the main surface of the support substrate 73. Thereafter, the first bonding layer 71 and the second bonding layer 72 are brought into contact with each other, and the growth substrate 5 and the support substrate 73 are disposed. In this state, pressure is applied to both substrates at a high temperature for a certain time. As an example of this joining condition, pressurization of 1 kilonewton (kN) is performed at 280 ° C. for 30 minutes. Thereby, the first bonding layer 71 and the second bonding layer 72 are bonded to each other.

Next, as shown in FIG. 6A, with the growth substrate 5 facing up, the Si substrate as the growth substrate 5 is removed by etching with a fluorine-based reaction gas (first treatment material) ( First processing step). The first treatment process by this etching is referred to as a first etching process. In this first etching step, the AlN layer of the buffer layer 6a is used as an etching stop layer. That is, the first processing material has a higher etching rate with respect to the growth substrate 5 than an etching rate with respect to the buffer layer 6a. Thereby, the back surface S4 of the buffer layer 6a is exposed. As the etching gas, a fluorine-based gas such as C ₄ F ₈ or SF ₆ is used, and a chlorine-based gas is not used in the first etching step. Thereby, the etching rate ratio between the Si substrate and the AlN layer of the buffer layer 6a becomes 100 times or more.

Because of the large etching rate ratio as described above, even if the unevenness (roughness) of the back surface S3 of the growth substrate 5 is, for example, about 2 micrometers (μm), the unevenness is transferred to the nitride semiconductor layer. There is no.
If the n-type semiconductor layer 10 is etched in a state where the unevenness is not eliminated, the etching proceeds to the vicinity of the light emitting layer 30 in the wafer surface, which may affect the light emission characteristics.

Next, as shown in FIG. 6B, etching with a chlorine-based reactive gas (second treatment material) is performed to reduce the thickness of the AlN layer and the n-type GaN layer 10 that are the buffer layers 6a. (Second processing step). This second processing step by etching will be referred to as a second etching step. In the present embodiment, the buffer layer 6a and a part of the n-type GaN layer 10 are removed by the second etching step. A chlorine-based gas such as Cl ₂ or BCl ₃ is used as an etching gas in the second etching step. Further, when Ar gas is mixed with the etching gas, physical etching is also added, so that the etching rate ratio between the AlN layer and the GaN layer is reduced. This makes it easier to control the etching depth.

  As shown in FIG. 6B, when etching is performed in the second etching step, the second main surface S2 of the n-type semiconductor layer 10 is exposed. The second main surface S2 corresponds to a surface to be finely processed as will be described later.

FIG. 10 is a cross-sectional view illustrating the state before and after the first etching step. FIG. 10A shows an SEM (Scanning Electron Microscope) observation image before the first etching step, and FIG. 10B shows an SEM observation image after the first etching step.
Although the initial thickness of the growth substrate 5 was 625 μm, it was thinned to about 6 μm by grinding in order to shorten the etching time. As shown in FIG. 10A, it can be seen that a roughness and a crushed layer of about 2 μm are formed on the back surface S3 of the growth substrate 5 after grinding. Further, as shown in FIG. 10B, it can be seen that the growth substrate 5 is completely removed by the etching in the first etching step. It can also be confirmed that the roughness of the back surface S3 of the growth substrate 5 is not transferred to the buffer layer 6a at all.

  Here, the growth substrate 5 is thinned to about 6 μm before the first etching step, but considering the physical damage to the light emitting layer during the thinning by grinding, the thickness is about 10 μm or more. Is preferable.

  Next, as illustrated in FIG. 7A, the stacked body 10 s is patterned using a lithography technique, for example, and divided into a plurality of semiconductor light emitting elements. In this patterning, the cross section of the stacked body 10s is formed in a tapered shape (mesa shape). That is, for example, the width of the n-type semiconductor layer 10 along the X axis is narrower than the width of the p-type semiconductor layer 20 along the X axis. For example, the width of the n-type semiconductor layer 10 along the Y axis is narrower than the width of the p-type semiconductor layer 20 along the Y axis.

In this patterning, for example, the etching is stopped at the SiO ₂ film of the interlayer insulating film 7 and the interlayer insulating film 7 is exposed.

Then, a protective layer (not shown) is formed so as to cover the side surface of the tapered laminated body 10s. For example, a SiO ₂ film is used for the protective layer. A portion of the SiO ₂ film that covers the second main surface S2 of the n-type semiconductor layer 10 is removed. At this time, a portion of the SiO ₂ film along the outer edge of the second main surface S2 of the n-type semiconductor layer 10 may be left. Thereby, the part along the outer edge of the n-type semiconductor layer 10 is protected by the protective layer.

  At this time, for example, unevenness can be formed on the exposed surface of the n-type semiconductor layer 10 by etching using potassium hydroxide. For example, etching is performed for 15 minutes using potassium hydroxide at a concentration of 1 mol / l and a temperature of 70 ° C. By such wet etching, the second main surface S2 of the n-type semiconductor layer 10 is roughened. In the second main surface S2, the n-type semiconductor layer 10 has a surface roughness of about 100 nm to 3000 nm. As a result, the structure illustrated in FIG. 7B is obtained.

  Then, as illustrated in FIG. 8, the n-side electrode 50 is formed in a portion excluding the center of the second main surface S <b> 2 of the n-type semiconductor layer 10. For example, a metal film such as Ti, Al, Rh, In, Ni, Pt and Au is formed as the n-side electrode 50 and processed into a predetermined shape.

  Thus, the n-side electrode 50 includes at least one selected from the group consisting of Ti, Al, Rh, In, Ni, Pt, and Au, for example.

  By performing the two-stage etching of the first etching process and the second etching process as in this embodiment, damage to the light emitting layer 30 when removing the growth substrate 5 can be suppressed. Further, since the smoothness in the wafer surface on the etched surface of the n-type semiconductor layer 10 is excellent, the manufacturing yield of the semiconductor light emitting device 110a can be significantly increased.

  In the first embodiment, the element isolation step shown in FIG. 7A is performed after the first etching step and the second etching step. For example, as shown in FIG. The element isolation process may be performed before and after the process, or before and after the first etching process as shown in FIG. In that case, a layer for protecting the active layer from being damaged by the etching gas is appropriately provided.

(Second Embodiment)
FIG. 11 is a flowchart of a method for manufacturing a nitride semiconductor device according to the embodiment.
That is, the manufacturing method includes patterning of the buffer layer (step S201), a first processing step (step S202), and a second processing step (step S203).
In the patterning of the buffer layer (step S201), the buffer layer formed on the growth substrate is patterned to form a first uneven shape.
In the first processing step (step S202), a growth substrate, a buffer layer formed on the growth substrate and including the first uneven shape, and a nitride formed on the first uneven shape of the buffer layer After the support substrate is bonded to the nitride semiconductor layer side of the structure including the semiconductor layer, the growth substrate is removed using the first treatment material.
In the second processing step (step S203), after the growth substrate is removed in the first processing step (step S202), the thicknesses of the buffer layer and the nitride semiconductor layer are different from those of the first processing material. The second concavo-convex shape reflecting the first concavo-convex shape is formed on the nitride semiconductor layer by performing a reduction using the processing material 2.

FIG. 12 is a schematic cross-sectional view illustrating an example of a nitride semiconductor device manufactured by the manufacturing method according to the embodiment.
In FIG. 12, a semiconductor light emitting device 110b is illustrated as an example of a nitride semiconductor device.

  As illustrated in FIG. 12, the semiconductor light emitting device 110 b includes an n-type semiconductor layer 10, a p-type semiconductor layer 20, a light emitting layer 30, a p-side electrode 40, and an n-side electrode 50.

  In the semiconductor light emitting device 110b, the main surface S5 of the n-type semiconductor layer 10 is provided with a minute uneven shape (second uneven shape C2).

Hereinafter, an example of a method for manufacturing the semiconductor light emitting device 110b will be described.
FIGS. 13 to 16 are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the nitride semiconductor device according to the second embodiment.
17 to 21 are enlarged schematic cross-sectional views illustrating the manufacturing method.
FIG. 17 shows an enlarged schematic cross-sectional view of a portion A shown in FIG. In FIG. 17, the Z-axis direction of FIG.
18 to 20 show an enlargement of the portion B shown in FIG.
FIG. 21 shows an enlargement of the portion C shown in FIG.

  As shown in FIG. 13A, the buffer layer 6b is formed on the growth substrate 5, and the stacked body 10s is crystal-grown on the buffer layer 6b. For example, a Si substrate is used as the growth substrate 5.

  The buffer layer 6b shown in FIG. 17 is formed by, for example, an organic metal vapor deposition (MOCVD) method.

An example of a specific method for manufacturing the buffer layer 6b is as follows.
First, the first buffer layer 61b is formed on the growth substrate 5, and the first buffer layer 61b is patterned using a lithography technique, for example, and divided into a plurality of regions. In this patterning, the width along the X axis of the first buffer layer 61b is about 3 μm, and the distance along the X axis between the adjacent first buffer layers 61b is about 2 μm.

  Next, the third buffer layer 63b is stacked. At this time, since the first buffer layer 61b is patterned as described above, the third buffer layer 63b grows only from the interface with the first buffer layer 61b. The coalescence portion 90 where the facets of the adjacent third buffer layers 63b are combined is formed near the center of the groove where the first buffer layer 61b is patterned. Thereafter, the second buffer layer 62b and the first buffer layer 61b are stacked in this order.

  As illustrated in FIG. 17, the buffer layer 6b may have a stacked structure in which the first buffer layer 61b, the second buffer layer 62b, and the third buffer layer 63b are repeated for several cycles.

For example, In _x8 Al _y8 Ga _1-x8-y8 N (0 <x8 <1, 0 <y8 <1) is used for the first buffer layer 61b. Is used. In an example of the embodiment, the first buffer layer 61b is AlN. The thickness of the first buffer layer 61b is, for example, 10 nm.

The second buffer layer 62b, for _{example, In x9 Al y9 Ga 1-} x9-y9 N (0 <x9 <1,0 <y9 <1) is used. Is used. In the example of the embodiment, the second buffer layer 62 is Al _0.75 Ga _0.25 N. The thickness of the second buffer layer 62b is, for example, 50 nm.

For example, In _x10 Al _y10 Ga _1-x10-y10 N (0 <x10 <1, 0 <y10 <1) is used for the third buffer layer 63b. In an example of the embodiment, the third buffer layer 63b is GaN. The thickness of the third buffer layer 63b is, for example, 2 μm.

After forming the epitaxial wafer provided with the buffer layer 6b, an insulating film to be the interlayer insulating film 7 is formed on the p-type semiconductor layer 20 as shown in FIG. For example, a SiO ₂ film is used for the interlayer insulating film 7. For example, a thermal CVD method is used to form the interlayer insulating film 7.

  As shown in FIG. 14A, the interlayer insulating film 7 is processed into a predetermined shape by, for example, photolithography and etching, and the p-side electrode 40 is formed by vapor deposition. For example, the p-side electrode 40 is a metal film including at least one of Ni, Pt, Ag, Ti, Al, In, Au, and the like.

  As shown in FIG. 14B, the first bonding layer 71 is formed so as to cover the interlayer insulating film 7 and the p-side electrode 40. For example, a Ti film, a Pt film, and an Au film to be the first bonding layer 71 are stacked in this order.

  On the other hand, the second bonding layer 72 is formed on the main surface of the support substrate 73 (for example, Si substrate). For example, an Au—Sn film to be the second bonding layer 72 is formed on the main surface of the support substrate 73. Thereafter, the first bonding layer 71 and the second bonding layer 72 are brought into contact with each other, and the growth substrate 5 and the support substrate 73 are disposed. In this state, pressure is applied to both substrates at a high temperature for a certain time. As an example of this joining condition, pressurization of 1 kN is performed at 280 ° C. for 30 minutes. Thereby, the first bonding layer 71 and the second bonding layer 72 are bonded to each other.

Next, the growth substrate 5 is removed. That is, in the structure of the buffer layer 6b shown in FIG. 17, the AlN layer of the buffer layer 61b is etched by removing the Si substrate in the first etching with the fluorine-based reaction gas with the growth substrate 5 facing upward. As a stop layer, the fine uneven shape (first uneven shape C1) shown in FIG. 18 is formed. As the etching gas, a fluorine-based gas such as C ₄ F ₈ or SF ₆ is used, and a chlorine-based gas is not used in the first etching step. As a result, as shown in FIG. 15A, the upper surface S6 of the buffer layer 6b having a fine uneven shape (first uneven shape C1) is formed.

Next, as shown in FIG. 15B, a second etching process using a chlorine-based reactive gas is performed to remove the buffer layer 6 b and a part of the n-type semiconductor layer 10. As the etching gas, a chlorine-based gas such as Cl ₂ or BCl ₃ is used. Further, when Ar gas is mixed with the etching gas, physical etching is also added, so that the etching rate ratio between the AlN layer and the GaN layer is reduced, and thus the etching depth can be controlled more easily.

  Thereby, the fine first uneven shape C1 formed on the upper surface S6 of the buffer layer 6b is transferred to the main surface S5 of the n-type semiconductor layer 10.

Here, a state in which the first uneven shape is transferred will be described with reference to FIGS.
As shown in FIG. 18, when the second etching process is performed in a state where the first uneven shape C1 is formed on the upper surface S6 of the buffer layer 6b, the etching of the buffer layer 6b is performed while the first uneven shape C1 is maintained. It progresses (see FIGS. 18 to 19). The concave portion of the first concavo-convex shape C1 reaches the n-type semiconductor layer 10 before the convex portion (see FIG. 20), and etching further proceeds.

  Then, when all the buffer layer 6b is removed, as shown in FIG. 21, a second uneven shape C2 reflecting the first uneven shape C1 is formed on the main surface S5 of the n-type semiconductor layer 10. When the etching rate of the buffer layer 6b is equal to the etching rate of the n-type semiconductor layer 10, the first uneven shape C1 and the second uneven shape C2 are equal. On the other hand, according to the difference in the etching rate, a difference occurs between the first uneven shape C1 and the second uneven shape C2.

  Next, as illustrated in FIG. 16A, the stacked body 10 s is patterned using a lithography technique, for example, and divided into a plurality of semiconductor light emitting elements. In this patterning, the cross section of the stacked body 10s is formed in a tapered shape (mesa shape). That is, for example, the width of the n-type semiconductor layer 10 along the X axis is narrower than the width of the p-type semiconductor layer 20 along the X axis. For example, the width of the n-type semiconductor layer 10 along the Y axis is narrower than the width of the p-type semiconductor layer 20 along the Y axis.

In this patterning, for example, the etching is stopped at the SiO ₂ film of the interlayer insulating film 7 and the interlayer insulating film 7 is exposed.

Then, a protective layer (not shown) is formed so as to cover the side surface of the tapered laminated body 10s. For example, a SiO ₂ film is used for the protective layer. A portion of the SiO ₂ film that covers the second main surface S2 of the n-type semiconductor layer 10 is removed. At this time, a portion of the SiO ₂ film along the outer edge of the second main surface S2 of the n-type semiconductor layer 10 may be left. Thereby, the part along the outer edge of the n-type semiconductor layer 10 is protected by the protective layer.

  Then, as illustrated in FIG. 16B, the n-side electrode 50 is formed in a portion excluding the center of the second main surface S <b> 2 of the n-type semiconductor layer 10. For example, a metal film such as Ti, Al, Rh, In, Ni, Pt and Au is formed as the n-side electrode 50 and processed into a predetermined shape.

  Thus, the n-side electrode 50 includes at least one selected from the group consisting of Ti, Al, Rh, In, Ni, Pt, and Au, for example.

  As in this embodiment, by performing two-stage etching on the epitaxial wafer on which the first buffer layer 61b is patterned, a fine second uneven shape C2 is formed on the main surface S5 of the n-type semiconductor layer 10. . As a result, it is possible to produce a structure with excellent light extraction efficiency from the main surface S5. Further, since it is not necessary to form fine irregularities by lithography technique or nanoimprint technique after removing the growth substrate 5, the process can be shortened.

  In the second embodiment, the element isolation step shown in FIG. 16A is performed after the first etching step and the second etching step. For example, before and after the step of FIG. Alternatively, the element isolation step may be performed before and after the first etching in FIG. In that case, a layer for protecting the active layer from being damaged by the etching gas is appropriately provided. In the second embodiment, the buffer layer patterning (step S201) and the growth of the stacked body 10s are performed. However, the buffer layer is patterned in advance, and the stacked body 10s is formed thereon. An epitaxial wafer may be used.

(Third embodiment)
22 to 24 are enlarged schematic cross-sectional views illustrating the embodiment.
22 to 24 show enlarged views of the buffer layer portion.
As shown in FIG. 22, in the embodiment, the buffer layer 6c is divided into a plurality of regions. That is, the buffer layer 6 c is provided on the main surface 5 a of the growth substrate 5 at a predetermined interval.

  For example, AlN is used for the buffer layer 6c. The buffer layer 6 c is divided into a plurality of regions by, for example, photolithography and etching after laminating an AlN layer on the main surface 5 a of the growth substrate 5. One region of the buffer layer 6c is formed in a hexagonal prism shape, for example. In the embodiment, the regions of the hexagonal columnar buffer layer 6c are arranged at an interval of about 1 μm. The surface of the growth substrate 5 is exposed except for the portion where the buffer layer 6c is formed.

  In this state, the stacked body 10s such as the n-type semiconductor layer 10 is formed on the buffer layer 6c. The n-type semiconductor layer 10 grown on the buffer layer 6c grows not only in the upward direction of the buffer layer 6c but also in the lateral direction. When the buffer layer 6c is AlN and the growth substrate 5 is Si, the probability of adsorption and dissociation of source molecules of GaN, which is the n-type semiconductor layer 10, is different between AlN and Si. For this reason, GaN crystal growth is promoted on the AlN surface rather than the Si surface. Thereby, the n-type semiconductor layer 10 grown in each of the adjacent buffer layers 6c is combined in the middle of the growth to form an integral film. A cavity region where the n-type semiconductor layer 10 is not grown is formed between the adjacent buffer layers 6c.

Thereafter, as shown in FIG. 23, the growth substrate 5 is removed (first processing step). For example, after the growth substrate 5 is ground and removed to some extent, the remaining growth substrate 5 is removed by, for example, dry etching using SF ₆ gas as an etchant. Note that the first etching step may be applied to the removal of the growth substrate 5. As a result, the buffer layer 6c formed by being divided into a plurality of regions remains on the second main surface S2 side of the n-type semiconductor layer 10. This buffer layer 6c exhibits the same effect as that of the second uneven shape C2 shown in FIG.

Furthermore, a second treatment process (for example, a second etching process) may be performed from the state shown in FIG.
FIG. 24 is an enlarged schematic cross-sectional view illustrating a state where the second etching step has been performed.
When the second etching step is performed from the state shown in FIG. 23, the n-type semiconductor layer 10 exposed from between the buffer layers 6c is etched. The n-type semiconductor layer 10 is etched along the plane direction, and for example, the cross section is formed in a V shape. Further, the buffer layer 6c is also etched in a tapered shape. Depending on the progress of the etching, the buffer layer 6c and the n-type semiconductor layer 10 that remain without being etched remain in a protruding shape. Such a shape of the buffer layer 6c and the n-type semiconductor layer 10 exhibits the same effect as that of the structure in which the second main surface S2 of the n-type semiconductor layer 10 illustrated in FIG. 7B is roughened. .

  As described above, according to the method for manufacturing a nitride semiconductor device according to the embodiment, the manufacturing yield can be improved.

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those further containing a group V element other than N (nitrogen), those further containing various elements added for controlling various physical properties such as conductivity type, and unintentionally Those further including various elements included are also included in the “nitride semiconductor”.

  In the present specification, “vertical” and “parallel” include not only strict vertical and strict parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. It ’s fine.

In the embodiment, as the first etching step and the second etching step, an example in which dry etching is used is shown. However, at least one of the first etching step and the second etching step may be performed by wet etching.
In the embodiment, the semiconductor light emitting device has been described as an example of the nitride semiconductor device. However, the nitride semiconductor device is not limited to the semiconductor light emitting device, and is applied to an electronic device such as a HEMT (High Electron Mobility Transistor) and a photodiode. It is also possible to do.

In addition, regarding the specific configuration of each element such as an electrode, a semiconductor layer, a substrate, and a bonding layer, those skilled in the art can implement the present invention in the same manner by appropriately selecting from a well-known range, and the same effect can be obtained. To the extent possible, they are included within the scope of the present invention.
Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  5 ... Growth substrate, 6a, 6b, 6c ... Buffer layer, 7 ... Interlayer insulating layer, 10 ... n-type semiconductor layer, 10s ... laminated body, 20 ... p-type semiconductor layer, 30 ... light emitting layer, 31 ... barrier layer, 32 ... well layer, 33 ... n-side intermediate layer, 34 ... p-side intermediate layer, 40 ... p-side electrode, 50 ... n-side electrode, 61a, 61b ... first buffer layer, 62a, 62b ... second buffer layer, 63b 2nd buffer layer, 71 ... 1st joining layer, 72 ... 2nd joining layer, 73 ... Support substrate, 90 ... Coalescence part, 110a, 110b ... Semiconductor light emitting element

(First embodiment)
FIG. 1 is a flowchart of a method for manufacturing a nitride semiconductor device according to the embodiment.
That is, this manufacturing method includes a first processing step (Step S101) and a second processing step (Step S102).
In the first processing step (step S101), nitriding of a structure having a growth substrate, a buffer layer formed on the growth substrate, and a nitride semiconductor layer formed on the buffer layer is performed. After the support substrate is bonded to the physical semiconductor layer side, the growth substrate is removed using the first processing material.
In the second processing step (step S102), after the growth substrate is removed in the first processing step (step S101), the thicknesses of the buffer layer and the nitride semiconductor layer are different from those of the first processing material. The process which reduces using the process material of 2 is performed.
Here, the process of reducing the thickness of the layer includes a process of removing the layer in addition to a process of reducing the thickness of the layer.
The second treatment material is different from the first treatment material. The second treatment material includes an element not included in the first treatment material, and the first treatment material is the second treatment material. Including any element that is not included.
The first treatment material, for example, a gas containing a gas, fluorine containing at least fluorine, and at least one of carbon and argon, a mixed gas further containing.
The second treatment material is, for example, a gas containing chlorine. The second treatment material is a mixed gas containing a gas containing chlorine and at least one of carbon and argon.

For example, In _x6 Al _y6 Ga _1-x6-y6 N (0 <x6 <1, 0 <y6 <1) is used for the first buffer layer 61a . In an example of implementation embodiment, a first buffer layer 61a is AlN. The thickness of the first buffer layer 61a is, for example, 10 nm.

For example, In _x7 Al _y7 Ga _1-x7-y7 N (0 <x7 <1, 0 <y7 <1) is used for the second buffer layer 62a . The implementation embodiment, the second buffer layer 62a _is a Al _{0.75 Ga 0.25} N. The thickness of the second buffer layer 62a is, for example, 50 nm.

FIG. 10 is a cross-sectional view illustrating the state before and after the first etching step. FIG. 10A shows an SEM (Scanning Electron Microscope) observation image before the first etching step, and FIG. 10B shows an SEM observation image after the first etching step.
The growth substrate 5, the initial thickness was the 5 25 [mu] m, in order to shorten the etching time was reduced to about 6μm by grinding. As shown in FIG. 10A, it can be seen that a roughness and a crushed layer of about 2 μm are formed on the back surface S3 of the growth substrate 5 after grinding. Further, as shown in FIG. 10B, it can be seen that the growth substrate 5 is completely removed by the etching in the first etching step. It can also be confirmed that the roughness of the back surface S3 of the growth substrate 5 is not transferred to the buffer layer 6a at all.

For example, In _x8 Al _y8 Ga _1-x8-y8 N (0 <x8 <1, 0 <y8 <1) is used for the first buffer layer 61b . In an example of implementation embodiment, the first buffer layer 61b is AlN. The thickness of the first buffer layer 61b is, for example, 10 nm.

The second buffer layer 62b, for _{example, In x9 Al y9 Ga 1-} x9-y9 N (0 <x9 <1,0 <y9 <1) is used. In an example of implementation embodiment, the second buffer layer 62 _is an Al _{0.75 Ga 0.25} N. The thickness of the second buffer layer 62b is, for example, 50 nm.

Thereafter, as shown in FIG. 23, the growth substrate 5 is removed (first processing step). For example, after the growth substrate 5 is ground and removed to some extent, the remaining growth substrate 5 is removed by, for example, dry etching using SF ₆ gas as an etchant. Note that the first etching step may be applied to the removal of the growth substrate 5. As a result, the buffer layer 6c formed by being divided into a plurality of regions remains on the second main surface S2 side of the n-type semiconductor layer 10. The buffer layer 6c exhibits the same effect as tiny second uneven shape C2 expressed in FIG.

Claims (7)

The nitridation of a structure having a growth substrate, a buffer layer having a first concavo-convex shape that forms a gap between the growth substrate, and a nitride semiconductor layer formed on the buffer layer A step of removing the growth substrate using a first treatment material after bonding the support substrate to the physical semiconductor layer side;
After removing the growth substrate, the thickness of the buffer layer and the nitride semiconductor layer is reduced using a second processing material different from the first processing material, and the nitride semiconductor layer is formed on the nitride semiconductor layer. Forming a second uneven shape reflecting the first uneven shape;
A method for manufacturing a nitride semiconductor device, comprising: Forming a film to be a part of the buffer layer on the growth substrate;
Forming the first concavo-convex shape by patterning the film;
Forming the buffer layer by forming another part of the buffer layer from above the film on which the first uneven shape is formed;
Forming the nitride semiconductor layer on the buffer layer;
The method for manufacturing a nitride semiconductor device according to claim 1, further comprising a step of forming the structure including: Removing the growth substrate by etching;
3. The method for manufacturing a nitride semiconductor device according to claim 1, wherein thicknesses of the buffer layer and the nitride semiconductor layer are reduced by etching. 4.   4. The method of manufacturing a nitride semiconductor device according to claim 3, wherein the first processing material is a processing material having an etching rate for the growth substrate higher than an etching rate for the buffer layer. The growth substrate comprises silicon;
The method for manufacturing a nitride semiconductor device according to claim 1, wherein the buffer layer is a nitride containing aluminum. The first treatment material contains fluorine,
The method for manufacturing a nitride semiconductor device according to claim 1, wherein the second treatment material contains chlorine.   The step of removing the growth substrate includes grinding the growth substrate to reduce the thickness and then dry etching to remove the growth substrate. The manufacturing method of the nitride semiconductor element of description.