JP2012238645A - Semiconductor device manufacturing method and reflection type exposure mask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce time necessary for removing a reflection type exposure mask absorbed by an electrostatic chuck.SOLUTION: A reflection type exposure mask comprises a substrate 11, a reflective layer 14 and a mask pattern 15 formed on a first surface side of the substrate 11, a conductive film 12 formed on a second surface side of the substrate 11, and an elastically deformable body 13 formed in a part of a region on the conductive film 12. The elastically deformable body 13 is composed of a non-conductive substance. The elastically deformable body 13 is compressed when a voltage is applied to an electrostatic chuck for a reflection type mask to cause the electrostatic chuck to absorb the reflection type exposure mask, and the elastically deformable body 13 tries to return to an original shape when application of the voltage is stopped. Detachment of the reflection type exposure mask from the electrostatic chuck for the reflection type mask is facilitated due to the returning force.

Description

  The present invention relates to a semiconductor device manufacturing method and a reflective exposure mask.

  In recent years, exposure apparatuses using extreme ultraviolet (EUV) have been developed. Since the projection optical system and the mask in the exposure apparatus do not have an appropriate material having a high EUV transmittance, the projection optical system and the mask are configured by a reflective mirror (hereinafter, the mask is referred to as a “reflective exposure mask”). The exposure environment is in a vacuum.

  In such an exposure apparatus, light is incident on the reflective exposure mask at an angle, so that the optical system is not telecentric with respect to the reflective exposure mask. For this reason, when the flatness of the surface of the reflective exposure mask is poor, the transfer pattern is displaced. Further, since the deflection of the reflection type exposure mask due to its own weight also causes deterioration of flatness, generally, an electrostatic chuck having high flatness is used to hold the reflection type exposure mask.

  In order to improve the reproducibility of the surface flatness when the reflective exposure mask is attracted to the electrostatic chuck, it is desirable to increase the attracting force as much as possible by increasing the applied voltage of the electrostatic chuck. However, if the mask is attracted to the electrostatic chuck with a strong attracting force, there is a problem that even if the chuck voltage is turned off, the residual charge remains on the chuck surface, so that the attracting force does not decrease easily and it takes time to remove the mask. Depending on the suction conditions, it may take several hours to remove the mask, which significantly reduces the processing throughput of the exposure apparatus.

  In Patent Document 1 (Japanese Patent Application Laid-Open No. 2006-324268), a conductive film is electrically connected between the back surface conductive film of the reflective exposure mask and the pattern forming layer on the front surface side, and the residual charge on the back surface conductive film is easily released. A technique for facilitating removal of the mask is described.

  Patent Document 2 (Japanese Patent Laid-Open No. 2002-299228) describes a technique using a mask having a conductive film formed on the back surface in order to hold a reflective exposure mask with an electrostatic chuck.

JP 2006-324268 A JP 2002-299228 A

  However, in the case of the technique described in Patent Document 1, even if the residual charge on the mask surface is lost, the residual charge on the surface of the electrostatic chuck is not immediately released, so it is considered that the attracting force does not decrease sufficiently in a short time. . As a result, it takes time to replace the mask, and the operation rate of the exposure apparatus is reduced.

  According to the present invention, the substrate, the mask pattern formed on the first surface side of the substrate, the conductive film formed on the second surface side of the substrate, and a non-conductive material, A reflective exposure mask having an elastic deformation body formed in a partial region on the conductive film is placed on the electrostatic chuck, and then a voltage is applied to the electrostatic chuck to thereby apply the electrostatic chuck to the electrostatic chuck. A holding step for adsorbing the reflective exposure mask; an exposure step for performing exposure after the holding step; and after the exposure step, application of a voltage to the electrostatic chuck is stopped, and the reflective exposure mask is removed. A removal step of removing from the electrostatic chuck; a second holding step of attracting the reflective exposure mask different from the reflective exposure mask to the electrostatic chuck after the removal step; and a second holding step. After that, the second exposure The method of manufacturing a semiconductor device having, an exposure step is provided.

  In addition, according to the present invention, the substrate, the mask pattern formed on the first surface side of the substrate, the conductive film formed on the second surface side of the substrate, and a nonconductive material are included. There is provided a reflective exposure mask having an elastic deformation body formed in a partial region on the conductive film.

  According to the reflection type exposure mask of the present invention, the reflection type exposure mask is placed on the reflection type mask electrostatic chuck so that the elastic deformation member faces the reflection type mask electrostatic chuck. When a predetermined voltage is applied to the electric chuck, the reflective exposure mask is attracted to the reflective mask electrostatic chuck by the force generated between the reflective mask electrostatic chuck and the reflective exposure mask. At this time, the elastic deformable body is compressed and compressive stress is generated inside. Since the elastic deformable body is made of a non-conductive substance, the adsorption between the elastic deformable body and the reflective mask electrostatic chuck due to the force is suppressed.

  In this state, when the application of voltage to the reflective mask electrostatic chuck is stopped, the elastic deformable body attempts to return to its original shape. The force acts in a direction to separate the reflective mask electrostatic chuck and the reflective exposure mask. As a result, the force promotes the separation of the reflective exposure mask from the reflective mask electrostatic chuck.

  According to the method of manufacturing a semiconductor device of the present invention using such a reflective exposure mask, the reflective exposure mask adsorbed on the electrostatic chuck for the reflective mask can be removed in a short time. A decrease in processing throughput can be suppressed. As a result, the manufacturing efficiency of the semiconductor device can be improved.

  According to the present invention, the time required to remove the reflective exposure mask adsorbed on the electrostatic chuck can be shortened.

It is a schematic diagram of an example of the exposure apparatus of this embodiment. It is a cross-sectional schematic diagram of an example of the reflective exposure mask of this embodiment. It is an example of the plane schematic diagram of the reflective exposure mask of this embodiment. It is an example of the plane schematic diagram of the reflective exposure mask of this embodiment. It is an example of the plane schematic diagram of the reflective exposure mask of this embodiment. It is a cross-sectional schematic diagram of an example of the reflective exposure mask of this embodiment. It is a cross-sectional schematic diagram of an example of the reflective exposure mask of this embodiment. It is a cross-sectional schematic diagram of an example of the reflective exposure mask of this embodiment. It is an example of the plane schematic diagram of the reflective exposure mask of this embodiment. 3 is a flowchart showing an example of a method for manufacturing a semiconductor device of the present embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

<First Embodiment>
First, an exposure apparatus and a reflective exposure mask used in the semiconductor device manufacturing method of this embodiment will be described.

  The exposure apparatus of this embodiment is an exposure apparatus that uses EUV light as exposure light, and has a reflective mask electrostatic chuck for adsorbing a reflective exposure mask. Such an exposure apparatus can have any configuration using the prior art, but an example will be described below with reference to the drawings.

  FIG. 1 is a schematic diagram of an example of an exposure apparatus according to the present embodiment. The exposure apparatus of this embodiment shown in the figure has a light source (not shown) that emits EUV light, a reflective mask electrostatic chuck 20, a plurality of reflective mirrors 30, and a wafer holder (not shown). .

  The reflective mask electrostatic chuck 20 is configured to hold the reflective exposure mask 10 of the present embodiment. Specifically, after the reflective exposure mask 10 is placed on the reflective mask electrostatic chuck 20, a voltage is applied to the reflective mask electrostatic chuck 20. By applying this voltage, an electrostatic attracting force is generated between the reflective mask electrostatic chuck 20 and the reflective exposure mask 10, and the reflective exposure mask 10 is attracted by the force.

  The wafer holder (not shown) is configured to hold the wafer 40 to be exposed.

  The exposure process by the exposure apparatus is as follows. EUV light is emitted from a light source (not shown) in a state where the reflective exposure mask 10 is attracted to the reflective mask electrostatic chuck 20 and the wafer 40 is held by a wafer holder (not shown). The EUV light is reflected by the reflective mirror 30 and then enters the reflective exposure mask 10. Thereafter, the EUV light reflected from the reflective exposure mask 10 is incident on the wafer 40 after being reflected by a plurality of reflective mirrors 30.

Next, the reflective exposure mask 10 of this embodiment will be described.
FIG. 2 is a schematic cross-sectional view of an example of the reflective exposure mask 10 of the present embodiment. As shown in the figure, the reflective exposure mask 10 of this embodiment includes a substrate 11, a conductive film 12, an elastic deformable body 13, a reflective layer 14, and a mask pattern 15.

The substrate 11 can be made of, for example, a low thermal expansion material. In the present embodiment, the “low thermal expansion material” is defined as a material having a thermal expansion coefficient of 1 × 10 ⁻⁶ / K or less at room temperature (25 ° C.) (the same applies hereinafter). As such a low thermal expansion material, for example, quartz glass, Ti-doped quartz glass, and the like are conceivable. The thickness of the substrate 11 can be set to 5 mm or more, for example.

  The reflective layer 14 has a function of reflecting EUV light. Such a reflective layer 14 can be configured in accordance with the prior art, but for example, can be a laminated structure having a molybdenum layer and a silicon layer. The thickness of the reflective layer 14 can be, for example, 200 nm to 500 nm, preferably 280 nm to 350 nm. The reflective layer 14 is formed on the first surface (lower surface in the drawing) side of the substrate 11.

  The mask pattern 15 has a planar shape patterned into a predetermined shape and has a function of absorbing EUV light. Such a mask pattern 15 can be configured in accordance with the prior art, but can be formed of a Ta-based material such as TaN, TaBN, or TaSi. Also, a laminated structure (eg, a laminated structure of TaN and CrN) with a CrN layer below the Ta-based material layer can be used. The thickness of the mask pattern 15 can be set to 40 nm or more and 100 nm or less, for example. The mask pattern 15 is formed on the first surface (lower surface in the drawing) side of the substrate 11 so as to be in the stacking order of the substrate 11 / reflection layer 14 / mask pattern 15.

  The conductive film 12 is made of a conductive material. Such a conductive film 12 can be realized in accordance with the prior art, but can be a film containing a conductive material such as chromium or chromium nitride, for example. The thickness of the conductive film 12 can be, for example, 20 nm or more and 100 nm or less. The conductive film 12 is formed on the second surface (upper surface in the drawing) side of the substrate 11.

  The elastic deformable body 13 is made of a material that satisfies the following requirements (1) and (2). It is desirable to further satisfy the requirements (3) to (5).

(1) Non-conductive material.
(2) When the reflective exposure mask 10 is mounted on the reflective mask electrostatic chuck 20 and a predetermined voltage for adsorption is applied to the reflective mask electrostatic chuck 20, the reflective mask electrostatic chuck 20 When the application of the voltage is stopped by compressing by the force generated between the reflective exposure mask 20 and the reflective exposure mask 10, the original shape is restored.
The predetermined value of the voltage is a design matter, but the reflective exposure mask 10 can be sufficiently adsorbed to the electrostatic mask 20 for the reflective mask, and the surface of the reflective exposure mask 10 has a sufficient flatness. The value can be secured.

(3) Low thermal expansion material.
(4) It has a heat resistance of 200 ° C. or higher.
(5) Resistant to mask cleaning chemicals such as acidic liquid and ozone water.

  The elastic deformable body 13 can be made of any material that satisfies at least the above requirements (1) and (2). For example, it can be made of quartz glass.

  The thickness of the elastic deformable body 13 can be 20 nm or more and 1 μm or less, preferably 40 nm or more and 100 nm or less, and more preferably 40 nm or more and 60 nm or less. Such an elastic deformable body 13 is formed on the second surface (upper surface in the drawing) side of the substrate 11 so as to be in the stacking order of the substrate 11 / conductive film 12 / elastic deformable body 13. The elastic deformation body 13 is formed in a partial region on the conductive film 12. The extent of the area of the elastic deformable body 13 is a design matter, but if the area of the elastic deformable body 13 is too large, the exposed area of the conductive film 12 becomes too small, and the reflective exposure mask 10. And the attractive force of the reflective mask electrostatic chuck 20 becomes weak.

  Here, an example of the planar shape of the elastic deformation body 13 will be described.

  FIG. 3 is a schematic plan view of the reflective exposure mask 10 shown in FIG. 2 as seen from the top to the bottom in the drawing, and a part of the reflection exposure mask 10 is enlarged and displayed. In the example shown in FIG. 3, the elastic deformation body 13 is formed in a predetermined pattern on substantially the entire surface of the conductive film 12 (substantially the entire surface of the substrate 11). The predetermined pattern is a lattice pattern in which a plurality of vertical lines and horizontal lines are regularly arranged. If the arrangement of the elastic deformable body 13 on the conductive film 12 is uneven, the surface flatness of the reflective exposure mask 10 during adsorption is adversely affected. Therefore, it is desirable to arrange the elastic deformable body 13 with periodicity so that the arrangement density is uniform. Further, in order to increase the uniformity of the local arrangement density, it is preferable to make the width and pitch of the vertical line and the horizontal line narrow. For example, it is desirable that the width is 5 mm or less and the pitch is 10 mm or less.

FIG. 4 is another example in which a part of a schematic plan view of the reflective exposure mask 10 shown in FIG. 2 as viewed from above in the drawing is enlarged. Also in the example shown in FIG. 4, the elastic deformation body 13 is formed in a predetermined pattern on substantially the entire surface of the conductive film 12 (substantially the entire surface of the substrate 11). The predetermined pattern is a dot-like pattern in which a plurality of dots having the same shape (square) are regularly arranged. The shape of the dot is not limited to a square, and any other shape can be adopted. Similarly, in this example, it is desirable that the elastic deformation bodies 13 are arranged with periodicity so that the arrangement density is uniform. In order to increase the uniformity of the local arrangement density, it is preferable to reduce the size and pitch of one dot. For example, the size is 5 mm square or less (surface area 25 mm ² or less) and the pitch is 10 mm or less. Is desirable.

  FIG. 5 is another example in which a part of a schematic plan view of the reflective exposure mask 10 shown in FIG. 2 as viewed from above in the drawing is enlarged. Also in the example shown in FIG. 5, the elastic deformation body 13 is formed in a predetermined pattern on substantially the entire surface of the conductive film 12 (substantially the entire surface of the substrate 11). The predetermined pattern is a stripe pattern in which vertical lines are regularly arranged. Similarly, in this example, it is desirable that the elastic deformation bodies 13 are arranged with periodicity so that the arrangement density is uniform. Further, in order to increase the uniformity of local arrangement density, it is preferable to make the width and pitch of the vertical lines narrow. For example, it is desirable to make the width 5 mm or less and the pitch 10 mm or less.

  Next, an example of the manufacturing method of the reflective exposure mask 10 of this embodiment is demonstrated. In addition, since a prior art can be applied to the means for forming the conductive film 12, the reflective layer 14, and the mask pattern 15 on the substrate 11, the description thereof is omitted here. Hereinafter, an example of a method for forming the elastic deformable body 13 will be described.

  For example, after the conductive film 12 is formed on the substrate 11 according to the conventional technique, a perforated mask containing a predetermined pattern is disposed on the conductive film 12 in the vicinity thereof. As the mask, for example, an aluminum plate processed and an insulating film coated on the surface can be used. Then, the elastic deformation body 13 having a predetermined pattern can be formed by forming a layer to be the elastic deformation body 13 using the sputtering method over the mask. When this method is used, it is necessary to devise a layout so that a desired pattern can be formed with one perforated mask, for example, in the case of the lattice pattern of FIG. 3, a notch is formed near the center of each side. There is. A resist can be used as a mask instead of the aluminum plate.

  As another example, the elastic deformation body 13 having a predetermined pattern can be formed by forming a film to be the elastic deformation body 13 on the entire surface of the conductive film 12 and then patterning the film by photolithography and etching.

  Next, the effect of the reflective exposure mask 10 of this embodiment will be described with reference to FIGS.

(I) As shown in FIG. 6, the reflective exposure mask 10 is placed on the reflective mask electrostatic chuck 20 so that the elastic deformation body 13 faces the reflective mask electrostatic chuck 20. When a predetermined voltage is applied to the mask electrostatic chuck 20, the reflective exposure mask 10 is used for the reflective mask due to the electrostatic attraction generated between the reflective mask electrostatic chuck 20 and the reflective exposure mask 10. Adsorb to the electrostatic chuck 20. At this time, the elastic deformable body 13 that satisfies the requirement (2) is compressed as shown in the figure, and compressive stress is generated inside. Therefore, it is necessary to set the applied voltage of the electrostatic chuck higher than the case where there is no elastic deformable body 13 so as to overcome this force. In general, the higher the applied voltage, the better the reproducibility of the flatness of the mask surface. Since the elastic deformable body 13 satisfies the requirement (1) above, no attracting force is generated between the elastic deformable body 13 and the electrostatic mask 20 for the reflective mask.

  In the state shown in FIG. 6, when the application of voltage to the reflective mask electrostatic chuck 20 is stopped to replace the mask, a residual attracting force remains between the electrostatic chuck and the mask. The elastic deformation body 13 that satisfies the requirement (2) is subjected to a force for returning to the original shape, that is, a force acting in a direction in which the reflective mask electrostatic chuck 20 and the reflective exposure mask 10 are separated. As a result, the force promotes the separation of the reflective exposure mask 10 from the reflective mask electrostatic chuck 20.

  The said effect is achieved by forming the elastic deformation body 13 which satisfy | fills the requirements of said (1) and (2) in the one part area | region on the electrically conductive film 12. FIG. In addition, by appropriately adjusting the area and thickness of the elastic deformable body 13, the “force for separating the electrostatic chuck for reflective mask 20 and the reflective exposure mask 10” realized by the elastic deformable body 13 is appropriately set. Can be adjusted. The thickness of the elastic deformable body 13 for making the function and effect sufficient is 20 nm or more, preferably 40 nm or more.

(II) Further, when the elastic deformable body 13 of the present embodiment is formed on a substantially entire surface of the substrate 11 in a predetermined pattern, the force with which the elastic deformable body 13 returns to the original shape is substantially equal to that of the reflective exposure mask 10. It will be added to the entire surface. Therefore, the separation of the reflective exposure mask 10 from the reflective mask electrostatic chuck 20 is further promoted.

(III) Further, when the elastic deformable body 13 of the present embodiment satisfies the requirements (3) to (5), the reflection exposure mask 10 may be sufficiently resistant to cleaning and repeated use. it can. For this reason, deterioration of the elastic deformation body 13 can be suppressed.

(IV) If the arrangement of the elastic deformation body 13 is uneven in the configuration of the reflective exposure mask 10 of this embodiment, non-uniform force acts on the mask due to the compressive deformation of the elastic deformation body 13. The flatness of the surface of the reflective exposure mask 10 may be impaired. The reflective exposure mask 10 of this embodiment can be provided with a configuration that alleviates the inconvenience.

(IV-I) When the elastic deformable body 13 of the present embodiment is formed on the substantially entire surface of the substrate 11 so that the unevenness is minimized in a predetermined pattern, the force resulting from the compressive deformation of the elastic deformable body 13 is reflected. It will be uniformly applied to the substantially entire surface of the exposure mask 10 with a fine period. For this reason, local deformation of the surface of the reflective exposure mask 10 can be suppressed. That is, the disadvantage that the flatness of the surface of the reflective exposure mask 10 is impaired can be reduced.

(IV-II) Also, when the planar shape of the elastic deformable body 13 is a lattice pattern as shown in FIG. 3, the width of the vertical and horizontal lines is 5 mm or less and the pitch is 10 mm or less, as shown in FIG. In the case of such a dot pattern, the size of one dot is 5 mm square or less and the pitch is 10 mm or less, and in the case of a stripe pattern as shown in FIG. 5, the width of the vertical line is 5 mm or less and the pitch is By setting it to 10 mm or less, it is possible to finely disperse the force applied to the reflective exposure mask 10 due to the compressive deformation of the elastic deformable body 13. As a result, local deformation of the surface of the reflective exposure mask 10 can be suppressed. That is, the disadvantage that the flatness of the surface of the reflective exposure mask 10 is impaired can be reduced.

(IV-III) Furthermore, the thickness of the substrate 11 is set to 5 mm or more, and the thickness of the elastic deformable body 13 is set to 1 μm or less, preferably 100 nm or less, whereby the local deformation caused by the compressive deformation of the elastic deformable body 13 is achieved. The force can be sufficiently absorbed by the substrate 11. As a result, it is possible to suppress the deformation of the surface of the reflective exposure mask 10. That is, the disadvantage that the flatness of the surface of the reflective exposure mask 10 is impaired can be reduced.

Next, a method for manufacturing the semiconductor device of this embodiment will be described.
FIG. 10 is a flowchart showing the flow of the semiconductor device manufacturing method of the present embodiment. As shown in FIG. 10, the manufacturing method of the semiconductor device of this embodiment includes a holding step S10, an exposure step S20, a removal step S30, a second holding step S40, and a second exposure step S50. .

  In the holding step S10, the reflective exposure mask 10 of the present embodiment is placed on the reflective mask electrostatic chuck 20, and then a voltage is applied to the reflective mask electrostatic chuck 20 so that the static for the reflective mask is static. The reflective exposure mask 10 is attracted to the electric chuck 20. Although the voltage value at this time is a design matter, the reflective exposure mask 10 can be sufficiently adsorbed to the reflective mask electrostatic chuck 20 and sufficient flatness of the surface of the reflective exposure mask 10 can be secured. The value can be set as much as possible.

  In the exposure step S20, exposure is performed. Specifically, as shown in FIG. 1, EUV light is emitted from a light source (not shown) in a state in which a wafer 40 to be exposed is held by a wafer holder (not shown).

  A film to be processed is formed on the wafer 40, and a resist having a predetermined pattern is formed thereon. As the film to be processed, for example, a conductive film such as polysilicon, a SiOC film, a SiCOH film, a low-k film (insulating film) such as a porous film thereof, or the like can be considered.

  The EUV light emitted from the light source reflects off the reflective mirror 30 and then reflects off the reflective exposure mask 10. Thereafter, the EUV light reflected from the reflective exposure mask 10 is incident on the wafer 40 after being reflected by a plurality of reflective mirrors 30. In this way, exposure is performed. Thereafter, processes such as development, etching, and resist removal are performed in this order.

  The exposure step S20 can be repeated a predetermined number of times while replacing the wafer 40 held by the wafer holding unit (not shown) while keeping the reflection type exposure mask 10 to be attracted to the reflection type mask electrostatic chuck 20 as it is.

  In the removal step S30, after the exposure step S20, voltage application to the reflective mask electrostatic chuck 20 is stopped, and the reflective exposure mask 10 is removed from the reflective mask electrostatic chuck 20.

  When the voltage application to the reflective mask electrostatic chuck 20 is stopped, as described with reference to FIGS. 6 and 7, the residual chucking force remains between the electrostatic chuck and the mask, but it has been compressed. The force with which the elastic deformable body 13 returns to its original shape acts in a direction to separate the reflective mask electrostatic chuck 20 and the reflective exposure mask 10 from each other, and the separation is promoted. As a result, the reflective exposure mask 10 can be removed from the reflective mask electrostatic chuck 20 in a short time.

  In the second holding step S40, after the removal step S30, that is, after the reflection type exposure mask 10 that has been sucked up to that time is removed from the reflection type mask electrostatic chuck 20, the reflection type mask electrostatic chuck 20 concerned. In addition, the reflective exposure mask 10 different from the one attracted to the reflective mask electrostatic chuck 20 in the holding step S10 is adsorbed. The adsorption can be realized in the same manner as the holding step S10.

  In the second exposure step S50, exposure is performed after the second holding step S40. Processing in this step is the same as that in the exposure step S20.

  According to the semiconductor device manufacturing method of the present embodiment described above, the reflective exposure mask 10 adsorbed to the reflective mask electrostatic chuck 20 can be removed in a short time, so that the processing throughput of the exposure apparatus is reduced. Can be suppressed. As a result, the manufacturing efficiency of the semiconductor device can be improved.

  In the semiconductor device manufacturing method of this embodiment, the voltage value for attracting the reflective exposure mask 10 to the reflective mask electrostatic chuck 20 is set to a sufficient flatness of the surface of the reflective exposure mask 10. Can be set to a value that can be secured. For this reason, it is possible to suppress the displacement of the transfer pattern due to the poor flatness of the surface of the reflective exposure mask 10.

<Second Embodiment>
This embodiment is different from the first embodiment in the configuration of the reflective exposure mask 10. Others are the same as those in the first embodiment, and a description thereof will be omitted here.

  FIG. 8 is a schematic cross-sectional view of an example of the reflective exposure mask 10 of the present embodiment. As shown in the figure, a reflective exposure mask 10 of this embodiment has a substrate 11, a conductive film 12, a reflective layer 14, and a mask pattern 15, and a part of the substrate 11 constitutes an elastic deformation body 16. doing.

  The substrate 11 can be made of the same material as in the first embodiment. And the convex part used as the elastic deformation body 16 is formed in the 2nd surface (upper surface in the figure) of the board | substrate 11. As shown in FIG.

  The planar shape of the elastic deformable body 16 (convex portion) can be the same as that in the first embodiment. Further, the height of the elastic deformable body 16 from the exposed surface of the conductive film 12 can be the same as the thickness of the elastic deformable body 13 of the first embodiment.

  FIG. 9 is a schematic plan view of the reflective exposure mask 10 shown in FIG. 8 as viewed from the top to the bottom in the drawing, and a part of the reflection exposure mask 10 is enlarged and displayed. In the example shown in FIG. 9, the elastic deformation body 16 is formed in a predetermined pattern on substantially the entire surface of the substrate 11. The predetermined pattern is a lattice pattern in which a plurality of vertical lines and horizontal lines are regularly arranged. In this embodiment as well, for the same reason as described in the first embodiment, it is desirable to arrange the elastic deformation bodies 16 with periodicity so that the arrangement density is uniform. Further, in order to improve the uniformity of the local arrangement density, it is preferable that the width and pitch of the vertical line and the horizontal line are narrowed, for example, 5 mm or less and 10 mm or less, respectively.

  Next, an example of the manufacturing method of the reflective exposure mask 10 of this embodiment is demonstrated.

  First, an example in which a convex portion that becomes the elastic deformable body 16 is formed on the second surface (upper surface in the drawing) of the substrate 11 will be described. For example, after a mask having a predetermined pattern is formed on the second surface (upper surface in the drawing) of the substrate 11, the exposed portion of the substrate 11 is dry-etched to form a convex portion that becomes the elastic deformable body 16. can do.

  Next, the conductive film 12 is formed so as to fill the concave portion on the second surface (upper surface in the drawing) side of the substrate 11. The implementation means is not particularly limited, but may be implemented as follows, for example.

  After forming a mask that covers only the convex portion formed on the second surface (upper surface in the drawing) side of the substrate 11, the conductive film 12 is formed over the mask. Thereafter, the conductive film 12 that fills the concave portion on the second surface (upper surface in the drawing) side of the substrate 11 may be formed by removing the mask.

  According to the present embodiment, in addition to the functions and effects realized in the first embodiment, the following functions and effects can be realized. That is, according to the reflective exposure mask 10 of the present embodiment, since the substrate 11 and the elastic deformable body 16 are integrated, there is no interface between them. Therefore, in comparison with the first embodiment, it is possible to reduce inconveniences such as the elastic deformation body 16 being peeled off from the reflective exposure mask 10. That is, the reflective exposure mask 10 having higher resistance to repeated use and cleaning is realized.

DESCRIPTION OF SYMBOLS 10 Reflection type exposure mask 11 Substrate 12 Conductive film 13 Elastic deformation body 14 Reflection layer 15 Mask pattern 16 Elastic deformation body 20 Electrostatic chuck for reflection type mask 30 Reflection type mirror 40 Wafer

Claims (18)

A substrate,
A mask pattern formed on the first surface side of the substrate;
A conductive film formed on the second surface side of the substrate;
An elastic deformation body made of a non-conductive substance and formed in a partial region on the conductive film;
Holding a reflective exposure mask having an electrostatic chuck, and then applying a voltage to the electrostatic chuck to hold the reflective exposure mask to the electrostatic chuck; and
An exposure step of performing exposure after the holding step;
After the exposure step, stop the application of voltage to the electrostatic chuck, and remove the reflective exposure mask from the electrostatic chuck;
After the removing step, a second holding step of attracting the reflective exposure mask different from the reflective exposure mask to the electrostatic chuck;
A second exposure step of performing exposure after the second holding step;
A method for manufacturing a semiconductor device comprising: In the manufacturing method of the semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the elastic deformable body is made of a low thermal expansion material having a thermal expansion coefficient of 1 × 10 ⁻⁶ / K or less. In the manufacturing method of the semiconductor device according to claim 2,
The method of manufacturing a semiconductor device, wherein the elastic deformable body is made of quartz glass. In the manufacturing method of the semiconductor device according to any one of claims 1 to 3,
The method of manufacturing a semiconductor device, wherein the elastic deformation body has a thickness of 20 nm to 1 μm. In the manufacturing method of the semiconductor device according to any one of claims 1 to 4,
The method of manufacturing a semiconductor device, wherein the elastic deformation body is formed on substantially the entire surface of the conductive film. In the manufacturing method of the semiconductor device according to claim 5,
The said elastic deformation body is a manufacturing method of the semiconductor device currently formed in the grid | lattice form, stripe form, or dot form with the periodicity, and the pitch is set to 10 mm or less. In the manufacturing method of the semiconductor device according to any one of claims 1 to 6,
A method of manufacturing a semiconductor device, wherein the substrate has a thickness of 5 mm or more. In the manufacturing method of the semiconductor device according to claim 1,
The method for manufacturing a semiconductor device, wherein the substrate is made of a low thermal expansion material having a thermal expansion coefficient of 1 × 10 ⁻⁶ / K or less. In the manufacturing method of the semiconductor device according to claim 8,
The method for manufacturing a semiconductor device, wherein the substrate is made of quartz glass. A substrate,
A mask pattern formed on the first surface side of the substrate;
A conductive film formed on the second surface side of the substrate;
An elastic deformation body made of a non-conductive substance and formed in a partial region on the conductive film;
A reflective exposure mask. The reflective exposure mask according to claim 10,
The elastic deformation body is a reflective exposure mask made of a low thermal expansion material having a thermal expansion coefficient of 1 × 10 ⁻⁶ / K or less. The reflective exposure mask according to claim 11, wherein
The elastic deformation body is a reflective exposure mask made of quartz glass. The reflective exposure mask according to any one of claims 10 to 12,
A reflective exposure mask in which the elastic deformable body has a thickness of 20 nm to 1 μm. The reflective exposure mask according to any one of claims 10 to 13,
The elastic deformation body is a reflective exposure mask formed on substantially the entire surface of the conductive film. The reflective exposure mask according to claim 14, wherein
The said elastic deformation body is a reflective exposure mask which is arrange | positioned with periodicity in the grid | lattice form, stripe form, or dot form, and the pitch is formed so that it may become 10 mm or less. The reflective exposure mask according to any one of claims 10 to 15,
A reflective exposure mask wherein the thickness of the substrate is 5 mm or more. The reflective exposure mask according to claim 10-16,
The said board | substrate is a reflection type exposure mask comprised with the low thermal expansion material whose thermal expansion coefficient is 1 * 10 < ^-6 > / K or less. The reflective exposure mask according to claim 17,
The substrate is a reflective exposure mask made of quartz glass.

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