JP2012229146A5 - Silicon fine particles, method of manufacturing the same, and Si ink provided with silicon fine particles, solar cell, and semiconductor device - Google Patents

Silicon fine particles, method of manufacturing the same, and Si ink provided with silicon fine particles, solar cell, and semiconductor device Download PDF

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JP2012229146A5
JP2012229146A5 JP2011099516A JP2011099516A JP2012229146A5 JP 2012229146 A5 JP2012229146 A5 JP 2012229146A5 JP 2011099516 A JP2011099516 A JP 2011099516A JP 2011099516 A JP2011099516 A JP 2011099516A JP 2012229146 A5 JP2012229146 A5 JP 2012229146A5
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silicon
fine particles
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単結晶シリコン又は多結晶シリコンを粉砕して得られた単粒子又はその凝集物を含む、Containing single particles or aggregates thereof obtained by grinding single crystal silicon or polycrystalline silicon,
シリコン微細粒子。Silicon fine particles. 単結晶シリコン又は多結晶シリコンのインゴットからウエハを切り出すときに生じる切粉からなる単粒子又はその凝集物を含む、Containing single particles or aggregates thereof consisting of chips generated when cutting a wafer from a single crystal silicon or polycrystalline silicon ingot
シリコン微細粒子。Silicon fine particles. 単結晶シリコン又は多結晶シリコンのインゴットからウエハを切り出すときに生じる切粉を粉砕又は再微細化して得られた単粒子又はその凝集物を含む、Containing single particles or aggregates thereof obtained by grinding or re-refining chips generated when cutting a wafer from an ingot of single crystal silicon or polycrystalline silicon
シリコン微細粒子。Silicon fine particles. 透過電子顕微鏡（ＴＥＭ）像において観察される、ナノメートルサイズの多角形状の領域が結晶であるシリコンの単粒子を含む、The nanometer-sized polygonal shaped region observed in a transmission electron microscope (TEM) image contains single particles of silicon of crystalline
請求項１乃至請求項３のいずれか１項に記載のシリコン微細粒子。The silicon fine particle according to any one of claims 1 to 3. 前記シリコン微細粒子が、大気中に一週間放置した後の、ケイ素原子（Ｓｉ）２ｐ軌道のＸＰＳ（Ｘ線光電子分光法）スペクトル特性に基づく膜厚が０．２４ｎｍ以下であるシリコン酸化膜を表面に備える、The surface of the silicon oxide film is 0.24 nm or less in film thickness based on the XPS (X-ray photoelectron spectroscopy) spectral characteristics of silicon atom (Si) 2p orbitals after the silicon fine particles are left in the atmosphere for one week Prepare for
請求項１乃至請求項３のいずれか１項に記載のシリコン微細粒子。The silicon fine particle according to any one of claims 1 to 3. 前記シリコン微細粒子が、フッ化水素酸水溶液中に分散処理して得られたシリコン微細粒子である、The silicon fine particles are silicon fine particles obtained by dispersing in a hydrofluoric acid aqueous solution,
請求項１乃至請求項３のいずれか１項に記載のシリコン微細粒子。The silicon fine particle according to any one of claims 1 to 3. 粒径が５ｎｍ〜５００ｎｍである、The particle size is 5 nm to 500 nm,
請求項１乃至請求項４のいずれか１項に記載のシリコン微細粒子。The silicon fine particle according to any one of claims 1 to 4. 請求項１乃至請求項５のいずれか１項に記載のシリコン微細粒子を含有する、A silicon fine particle according to any one of claims 1 to 5 containing
Ｓｉインク。Si ink. 請求項１乃至請求項５のいずれか１項に記載のシリコン微細粒子を備えた、A silicon fine particle according to any one of claims 1 to 5, comprising:
太陽電池。Solar cell. 請求項１乃至請求項５のいずれか１項に記載のシリコン微細粒子を備えた、A silicon fine particle according to any one of claims 1 to 5, comprising:
半導体装置。Semiconductor device. 単結晶シリコン又は多結晶シリコンのウエハを粉砕して得られた単粒子又はその凝集物を含むシリコン微細粒子、あるいは単結晶シリコン又は多結晶シリコンのインゴットから前記ウエハを切り出すときに生じる切粉からなる単粒子又はその凝集物を含むシリコン微細粒子を形成する工程を備える、
シリコン微細粒子の製造方法。 Silicon fine particles containing single particles or aggregates thereof obtained by crushing a wafer of single crystal silicon or polycrystalline silicon, or chips generated when cutting the wafer from an ingot of single crystal silicon or polycrystalline silicon Forming silicon fine particles including single particles or aggregates thereof;
Method of producing silicon fine particles. 前記シリコン微細粒子をフッ化水素酸水溶液中に分散処理する工程をさらに備える、
請求項１１に記載のシリコン微細粒子の製造方法。 The method further comprises the step of dispersing the silicon fine particles in a hydrofluoric acid aqueous solution,
The method for producing silicon fine particles according to claim 11 . 前記シリコン微細粒子を、さらにビーズミル、ボールミル、ジェットミル、衝撃波粉砕法のいずれか、又はそれらの組み合わせによって再粉砕する工程を備える、
請求項１１又は請求項１２に記載のシリコン微細粒子の製造方法。 The silicon fine particles, further bi Zumiru, a ball mill, a jet mill, or shock wave pulverization method, or comprising the step of re-ground by a combination thereof,
The manufacturing method of the silicon | silicone fine particle of Claim 11 or Claim 12 . 粒径が５ｎｍ〜５００ｎｍである、
請求項１１乃至請求項１３のいずれか１項に記載のシリコン微細粒子の製造方法。 Particle size is 5nm~500nm,
The method for producing silicon fine particles according to any one of claims 11 to 13 . 前記フッ化水素酸水溶液の温度が５０℃以下の室温である、
請求項１２に記載のシリコン微細粒子の製造方法。 Temperature of the hydrofluoric acid solution is a room temperature of 50 ° C. or less,
A method of producing silicon fine particles according to claim 12 . 請求項１１乃至請求項１５のいずれか１項に記載のシリコン微細粒子の製造方法によって得られたシリコン微細粒子を含有する、
Ｓｉインク。 Containing silicon fine particles obtained by the method for producing silicon fine particles according to any one of claims 11 to 15,
Si ink. 光電変換層が、請求項１１乃至請求項１５のいずれか１項に記載のシリコン微細粒子の製造方法によって得られたシリコン微細粒子を備えた、
太陽電池。 Photoelectric conversion layer, with a silicon micro particles obtained by the method for producing silicon fine particles according to any one of claims 11 to 15,
Solar cell. 請求項１１乃至請求項１５のいずれか１項に記載のシリコン微細粒子の製造方法によって得られたシリコン微細粒子を備えた、
半導体装置。 With a silicon micro particles obtained by the method for producing silicon fine particles according to any one of claims 11 to 15,
Semiconductor device.
JP2011099516A 2011-04-27 2011-04-27 METHOD FOR MANUFACTURING SILICON FINE PARTICLE, AND Si INK, SOLAR CELL AND SEMICONDUCTOR DEVICE USING THE SILICON FINE PARTICLE Pending JP2012229146A (en)

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US20140179049A1 (en) * 2012-12-20 2014-06-26 Nanogram Corporation Silicon/germanium-based nanoparticle pastes with ultra low metal contamination
JP6462572B2 (en) * 2013-09-05 2019-01-30 小林　光 Hydrogen production apparatus, hydrogen production method, silicon fine particles for hydrogen production, and method for producing silicon fine particles for hydrogen production
JP6336731B2 (en) * 2013-09-25 2018-06-06 京セラ株式会社 Solar cell
WO2015189926A1 (en) * 2014-06-11 2015-12-17 小林　光 Negative electrode material for lithium ion batteries, lithium ion battery, method and apparatus for producing negative electrode for lithium ion batteries, and method and apparatus for producing negative electrode material for lithium ion batteries
JP2016001613A (en) * 2015-07-30 2016-01-07 小林　光 Negative electrode material of lithium ion battery, lithium ion battery, and method of manufacturing negative electrode or negative electrode material of lithium ion battery
JP6599745B2 (en) * 2015-12-02 2019-10-30 光 小林 Silicon fine particle manufacturing method and apparatus, and silicon fine particle
JP6914615B2 (en) * 2016-04-06 2021-08-04 日新化成株式会社 Methods for manufacturing negative electrode materials for lithium-ion batteries, lithium-ion batteries, negative electrode materials for lithium-ion batteries, and their manufacturing equipment.

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