JP2012227352A - High-frequency transformer, high-frequency component, and communication terminal device - Google Patents

High-frequency transformer, high-frequency component, and communication terminal device Download PDF

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JP2012227352A
JP2012227352A JP2011093630A JP2011093630A JP2012227352A JP 2012227352 A JP2012227352 A JP 2012227352A JP 2011093630 A JP2011093630 A JP 2011093630A JP 2011093630 A JP2011093630 A JP 2011093630A JP 2012227352 A JP2012227352 A JP 2012227352A
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coil element
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Noboru Kato
登 加藤
Tsutomu Iegi
勉 家木
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Murata Manufacturing Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To configure a low-loss high-frequency transformer capable of obtaining stronger coupling even when the high-frequency transformer is miniaturized and thinned, and to configure a high-frequency component and a communication terminal device having the same.SOLUTION: A coil winding axis of a primary side coil element L10 and coil winding axes of secondary side coil elements L211 and L221 are a common coil winding axis AX1. Winding directions and connection directions of these coil elements are defined so that a direction of a magnetic flux generated by the primary side coil element L10 and a direction of a magnetic flux generated by the secondary side coil elements L211 and L221 become reverse to each other. In addition, winding directions and connection directions of the secondary side coil elements L211, L212, L221 and L222 are defined so that a magnetic flux passing through the adjacent secondary side coil elements L211 and L212 forms a closed loop and a magnetic flux passing through the secondary side coil elements L221 and L222 forms a closed loop.

Description

本発明は、コイル素子同士が高い結合度で結合された高周波トランス、それを備えた高周波部品および通信端末装置に関する。   The present invention relates to a high-frequency transformer in which coil elements are coupled with a high degree of coupling, a high-frequency component including the same, and a communication terminal device.

無線通信用の回路にはインピ−ダンス変換、インピ−ダンス整合、平衡−不平衡変換等を行うために高周波トランスが用いられる。携帯端末装置等の小型の通信端末装置においては小型、薄型で低損失な高周波トランスが求められる。   In a circuit for wireless communication, a high frequency transformer is used to perform impedance conversion, impedance matching, balanced-unbalanced conversion, and the like. A small communication terminal device such as a portable terminal device requires a high-frequency transformer that is small, thin, and low loss.

小型の高周波トランスとしては、たとえば特許文献1や特許文献2に開示されているように、積層基板により構成されたものが用いられている。また、特許文献3には、バラン(バルン・トランス)の例が開示されている。   As a small-sized high frequency transformer, for example, as disclosed in Patent Document 1 and Patent Document 2, one constituted by a multilayer substrate is used. Patent Document 3 discloses an example of a balun (balun trance).

実開昭59−44002号公報Japanese Utility Model Publication No.59-44002 特開2004−63952号公報Japanese Patent Application Laid-Open No. 2004-63952 特開2008−167403号公報JP 2008-167403 A

しかしながら、特許文献1〜3に開示されている高周波トランスにおいては、製品の小型化薄型化の進展に伴って全体に小型化すると、積層基板に形成したコイルの磁束の閉じ込め性が低下し、損失が増大するという課題があった。   However, in the high-frequency transformers disclosed in Patent Documents 1 to 3, when the size of the product is reduced as a whole as the product is reduced in size and thickness, the confinement property of the magnetic flux of the coil formed on the laminated substrate is reduced, and the loss is reduced. There has been a problem of increasing.

そこで、本発明は、高周波トランスを小型薄型化した場合においても、より強い結合が得られ、低損失な高周波トランスおよびそれを備えた高周波部品および通信端末装置を提供することを目的としている。   Accordingly, an object of the present invention is to provide a high-frequency transformer, a high-frequency component including the same, and a communication terminal device that can obtain stronger coupling even when the high-frequency transformer is reduced in size and thickness.

本発明の高周波トランスは、
一つまたは複数のコイル巻回軸を有する1次側コイル素子および互いに平行な複数のコイル巻回軸を有する2次側コイル素子を備え、
前記1次側コイル素子のコイル巻回軸は前記2次側コイル素子のコイル巻回軸に一致する共通のコイル巻回軸であり、
前記共通のコイル巻回軸上に1次側コイル素子と2次側コイル素子との境界を2以上有するように、前記1次側コイル素子および前記2次側コイル素子が配列され、
前記複数のコイル巻回軸のうち隣り合うコイル巻回軸上に配置された、第1の2次側コイル素子と第2の2次側コイル素子は直列に接続されて、この第1の2次側コイル素子と第2の2次側コイル素子を通る磁束が閉ループを構成するように、前記第1の2次側コイル素子および前記第2の2次側コイル素子の巻回方向および接続の向きが定められたことを特徴としている。
The high-frequency transformer of the present invention is
A primary coil element having one or a plurality of coil winding axes and a secondary coil element having a plurality of coil winding axes parallel to each other;
The coil winding axis of the primary side coil element is a common coil winding axis that matches the coil winding axis of the secondary side coil element,
The primary coil element and the secondary coil element are arranged so as to have two or more boundaries between the primary coil element and the secondary coil element on the common coil winding axis,
The first secondary coil element and the second secondary coil element arranged on the adjacent coil winding axis among the plurality of coil winding axes are connected in series, and the first 2 The winding direction and connection of the first secondary coil element and the second secondary coil element so that the magnetic flux passing through the secondary coil element and the second secondary coil element forms a closed loop. It is characterized by its orientation.

本発明の高周波部品は高周波トランスを備え、
前記高周波トランスは、
一つまたは複数のコイル巻回軸を有する1次側コイル素子および互いに平行な複数のコイル巻回軸を有する2次側コイル素子を備え、
前記1次側コイル素子のコイル巻回軸は前記2次側コイル素子のコイル巻回軸に一致する共通のコイル巻回軸であり、
前記共通のコイル巻回軸上に1次側コイル素子と2次側コイル素子との境界を2以上有するように、前記1次側コイル素子および前記2次側コイル素子が配列され、
前記複数のコイル巻回軸のうち隣り合うコイル巻回軸上に配置された、第1の2次側コイル素子と第2の2次側コイル素子は直列に接続されて、この第1の2次側コイル素子と第2の2次側コイル素子を通る磁束が閉ループを構成するように、前記第1の2次側コイル素子および前記第2の2次側コイル素子の巻回方向および接続の向きが定められたことを特徴としている。
The high frequency component of the present invention includes a high frequency transformer,
The high-frequency transformer is
A primary coil element having one or a plurality of coil winding axes and a secondary coil element having a plurality of coil winding axes parallel to each other;
The coil winding axis of the primary side coil element is a common coil winding axis that matches the coil winding axis of the secondary side coil element,
The primary coil element and the secondary coil element are arranged so as to have two or more boundaries between the primary coil element and the secondary coil element on the common coil winding axis,
The first secondary coil element and the second secondary coil element arranged on the adjacent coil winding axis among the plurality of coil winding axes are connected in series, and the first 2 The winding direction and connection of the first secondary coil element and the second secondary coil element so that the magnetic flux passing through the secondary coil element and the second secondary coil element forms a closed loop. It is characterized by its orientation.

本発明の通信端末装置は通信信号の伝送部に高周波トランスを備え、
前記高周波トランスは、
一つまたは複数のコイル巻回軸を有する1次側コイル素子および互いに平行な複数のコイル巻回軸を有する2次側コイル素子を備え、
前記1次側コイル素子のコイル巻回軸は前記2次側コイル素子のコイル巻回軸に一致する共通のコイル巻回軸であり、
前記共通のコイル巻回軸上に1次側コイル素子と2次側コイル素子との境界を2以上有するように、前記1次側コイル素子および前記2次側コイル素子が配列され、
前記複数のコイル巻回軸のうち隣り合うコイル巻回軸上に配置された、第1の2次側コイル素子と第2の2次側コイル素子は直列に接続されて、この第1の2次側コイル素子と第2の2次側コイル素子を通る磁束が閉ループを構成するように、前記第1の2次側コイル素子および前記第2の2次側コイル素子の巻回方向および接続の向きが定められたことを特徴としている。
The communication terminal device of the present invention comprises a high-frequency transformer in the communication signal transmission unit,
The high-frequency transformer is
A primary coil element having one or a plurality of coil winding axes and a secondary coil element having a plurality of coil winding axes parallel to each other;
The coil winding axis of the primary side coil element is a common coil winding axis that matches the coil winding axis of the secondary side coil element,
The primary coil element and the secondary coil element are arranged so as to have two or more boundaries between the primary coil element and the secondary coil element on the common coil winding axis,
The first secondary coil element and the second secondary coil element arranged on the adjacent coil winding axis among the plurality of coil winding axes are connected in series, and the first 2 The winding direction and connection of the first secondary coil element and the second secondary coil element so that the magnetic flux passing through the secondary coil element and the second secondary coil element forms a closed loop. It is characterized by its orientation.

本発明によれば、小型薄型化を行っても低損失でインダクタンスの高いコイルを備えるので、小型薄型で且つ低損失な高周波トランス、それを備えた高周波部品および通信端末装置が得られる。また、隣り合うコイル素子間で磁束が閉ループを形成するように複数のコイル素子を配置し接続することによりコイルの磁束密度をより高めることができ、結合度の高い高周波トランス、それを備えた高周波部品および通信端末装置が得られる。   According to the present invention, since a coil with low loss and high inductance is provided even if it is reduced in size and thickness, a high-frequency transformer that is small and thin and has low loss, a high-frequency component including the same, and a communication terminal device can be obtained. Further, by arranging and connecting a plurality of coil elements so that the magnetic flux forms a closed loop between adjacent coil elements, the magnetic flux density of the coil can be further increased, and a high-frequency transformer having a high coupling degree and a high-frequency transformer provided with the high-frequency transformer Parts and a communication terminal device are obtained.

図1(a)、図1(b)は第1の実施形態の高周波トランス101A,101Bの回路図である。FIGS. 1A and 1B are circuit diagrams of the high-frequency transformers 101A and 101B according to the first embodiment. 図2は、図1(a)の高周波トランスを積層基板内の導体配線により構成した層構成を示す図である。FIG. 2 is a diagram illustrating a layer configuration in which the high-frequency transformer of FIG. 1A is configured by conductor wiring in a multilayer substrate. 図3(a)、図3(b)は第2の実施形態の高周波トランス102A,102Bの回路図である。3A and 3B are circuit diagrams of the high-frequency transformers 102A and 102B according to the second embodiment. 図4は第3の実施形態の高周波トランス103の回路図である。FIG. 4 is a circuit diagram of the high-frequency transformer 103 of the third embodiment. 図5(a)、図5(b)、図5(c)、図5(d)は第4の実施形態の各高周波トランス104A,104B,104C,104Dの回路図である。FIGS. 5A, 5B, 5C, and 5D are circuit diagrams of the high-frequency transformers 104A, 104B, 104C, and 104D of the fourth embodiment. 図6は、図5(a)の高周波トランスを積層基板内の導体配線により構成した層構成を示す図である。FIG. 6 is a diagram showing a layer configuration in which the high-frequency transformer of FIG. 5A is configured by conductor wiring in the multilayer substrate. 図7は第5の実施形態の高周波トランス105の回路図である。FIG. 7 is a circuit diagram of the high-frequency transformer 105 of the fifth embodiment. 図8は第6の実施形態の高周波部品および通信端末装置の構成図である。FIG. 8 is a configuration diagram of the high-frequency component and the communication terminal device of the sixth embodiment. 図9は第7の実施形態の高周波部品および通信端末装置の構成図である。FIG. 9 is a configuration diagram of the high-frequency component and the communication terminal device of the seventh embodiment.

《第1の実施形態》
図1(a)、図1(b)は第1の実施形態の高周波トランス101A,101Bの回路図である。これらの図ではコイル巻回軸(以降、単に「巻回軸」)と巻回方向を考慮して描いている。(巻回軸と巻回方向を考慮して回路図を描く点は第2の実施形態以降についても同様である。)この高周波トランス101A,101Bは、5つのコイル素子L10,L211,L212,L221,L222を備えている。また、高周波トランス101A,101Bは、1次側の端子P1,P2、2次側の端子P3,P4を備えている。入力端子P1−P2間にはコイル素子L10が接続されている。入力端子P3−P4間にはコイル素子L211,L212の直列回路とコイル素子L221,L222の直列回路とが並列接続されている。
<< First Embodiment >>
FIGS. 1A and 1B are circuit diagrams of the high-frequency transformers 101A and 101B according to the first embodiment. In these figures, the coil winding axis (hereinafter simply referred to as “winding axis”) and the winding direction are taken into consideration. (The point of drawing a circuit diagram in consideration of the winding axis and the winding direction is the same in the second and subsequent embodiments.) The high-frequency transformers 101A and 101B include five coil elements L10, L211, L212, and L221. , L222. The high-frequency transformers 101A and 101B include primary side terminals P1 and P2 and secondary side terminals P3 and P4. A coil element L10 is connected between the input terminals P1 and P2. Between the input terminals P3 and P4, a series circuit of coil elements L211 and L212 and a series circuit of coil elements L221 and L222 are connected in parallel.

コイル素子L10は巻回軸AX1に沿ってらせん状に巻回されている。二つのコイル素子L211,L221は巻回軸AX1に沿ってコイル素子L10を挟んで対称の位置に配置されている。そしてこの二つのコイル素子L211,L221は巻回軸AX1に沿って互いに逆の巻回方向でらせん状に巻回されている。   The coil element L10 is spirally wound along the winding axis AX1. The two coil elements L211 and L221 are arranged at symmetrical positions along the winding axis AX1 with the coil element L10 interposed therebetween. The two coil elements L211 and L221 are spirally wound in the winding directions opposite to each other along the winding axis AX1.

また、二つのコイル素子L212,L222は巻回軸AX2の中央に対して対称の位置に配置されている。そしてこの二つのコイル素子L212,L222は巻回軸AX2に沿って互いに逆の巻回方向でらせん状に巻回されている。   Further, the two coil elements L212 and L222 are arranged at symmetrical positions with respect to the center of the winding axis AX2. The two coil elements L212 and L222 are spirally wound along the winding axis AX2 in mutually opposite winding directions.

前記巻回軸AX1はコイル素子L10とL211,L221に対して共通の巻回軸である。この共通のコイル巻回軸AX1上に1次側コイル素子L10と2次側コイル素子L211との境界および1次側コイル素子L10と2次側コイル素子L221との境界が生じるように1次側コイル素子L10と2次側コイル素子L211,L221が配列されている。本発明において「境界」とは、コイル巻回軸上で互いに隣接するコイル素子とコイル素子とで挟まれる領域である。そして、この境界で隣接するコイル素子とコイル素子とが互いに作用しあう。   The winding axis AX1 is a common winding axis for the coil elements L10, L211 and L221. The primary side so that the boundary between the primary side coil element L10 and the secondary side coil element L211 and the boundary between the primary side coil element L10 and the secondary side coil element L221 are generated on the common coil winding axis AX1. Coil element L10 and secondary coil elements L211 and L221 are arranged. In the present invention, the “boundary” is a region sandwiched between adjacent coil elements on the coil winding axis. And the coil element and coil element which adjoin at this boundary mutually interact.

1次側コイル素子L10と2次側コイル素子L211,L221との相互誘導により、1次側コイル素子L10により生じる磁束および2次側コイル素子L211,L221により生じる磁束の向きが互いに逆になるように、1次側コイル素子L10と2次側コイル素子L211,L221の巻回方向および接続の向きが定められている。   The mutual induction of the primary coil element L10 and the secondary coil elements L211 and L221 causes the directions of the magnetic flux generated by the primary coil element L10 and the magnetic flux generated by the secondary coil elements L211 and L221 to be opposite to each other. In addition, the winding direction and connection direction of the primary side coil element L10 and the secondary side coil elements L211 and L221 are determined.

図1(a)、図1(b)中の矢印は、端子P1から端子P2へ、端子P3から端子P4へとそれぞれ流れる電流i1、i2の向きを示している。この電流の向きは高周波電流の位相(極性)を表している。図1(b)は、図1(a)に対し、端子P3−P4間のコイルの巻回方向を逆にしている。この場合、端子P3−P4に流れる電流の向きを反対、すなわち電流の位相を端子P1−P2に対して180度差にすることで、磁界の向きは図1(a)と同じになる。   The arrows in FIGS. 1A and 1B indicate the directions of currents i1 and i2 flowing from the terminal P1 to the terminal P2 and from the terminal P3 to the terminal P4, respectively. The direction of this current represents the phase (polarity) of the high-frequency current. In FIG. 1B, the winding direction of the coil between the terminals P3 and P4 is reversed with respect to FIG. In this case, the direction of the magnetic field becomes the same as that in FIG. 1A by making the direction of the current flowing through the terminals P3-P4 opposite, that is, by making the phase of the current 180 degrees different from the terminals P1-P2.

図1(a)、図1(b)の例では、1次側コイル素子L10に生じる磁束が下向きになる瞬間に、2次側コイル素子L211,L221に生じる磁束は上向きになり、高周波電流によって磁界が変化するいかなるタイミングにおいても1次側コイル素子L10と2次側コイル素子L211,L221に生じる磁束の向きは逆向きになる。すなわち、1次側コイル素子と2次側コイル素子の界面においては、互いに磁束を跳ね返す(退け合う)ように作用するため、各コイル素子周辺の磁束密度は高くなる。すなわち、あたかも磁性体に磁束を閉じ込めたかのような効果をもたらすことができる。特に、コイルの両端で逆向きの磁束の影響を受けると各コイルの磁束を閉じ込める効果が高くなり、磁束密度を高めることができる。   In the example of FIG. 1A and FIG. 1B, the magnetic flux generated in the secondary coil elements L211 and L221 is upward at the moment when the magnetic flux generated in the primary coil element L10 is directed downward. At any timing when the magnetic field changes, the direction of the magnetic flux generated in the primary side coil element L10 and the secondary side coil elements L211 and L221 is reversed. That is, at the interface between the primary side coil element and the secondary side coil element, the magnetic flux acts to repel (retreat) each other, so that the magnetic flux density around each coil element increases. That is, an effect as if the magnetic flux was confined in the magnetic material can be brought about. In particular, when affected by opposite magnetic fluxes at both ends of the coil, the effect of confining the magnetic flux of each coil is enhanced, and the magnetic flux density can be increased.

また、第1の実施形態によれば、直列接続された隣り合うコイル素子L211,L212、およびコイル素子L221,L222は、互いに磁束の向きが逆になるようにそれぞれのコイル素子の向きが定められている。そのため、隣接するコイル素子をまたいで磁束が周回して強め合う。そのため、より一層閉じ込め効果が高く、損失の少ないコイルを構成することができ、1次側−2次側の結合量も大きくできる。   In addition, according to the first embodiment, the coil elements L211 and L212 and the coil elements L221 and L222 connected in series have their coil elements oriented so that the directions of magnetic fluxes are opposite to each other. ing. For this reason, the magnetic flux circulates between adjacent coil elements to strengthen each other. For this reason, a coil having a higher confinement effect and less loss can be formed, and the amount of coupling between the primary side and the secondary side can be increased.

また、第1の実施形態によれば、各コイル素子に流れる電流は巻回軸AX1,AX2の中央に対して対称関係であるので、端子P1〜P4に対してバランス良く寄生容量や寄生インダクタンスが付くことになり、これらの寄生成分による影響が効果的に打ち消される。   Further, according to the first embodiment, since the current flowing through each coil element is symmetrical with respect to the center of the winding axes AX1 and AX2, parasitic capacitance and parasitic inductance are balanced with respect to the terminals P1 to P4. Therefore, the influence of these parasitic components is effectively counteracted.

図2は、図1(a)の高周波トランスをチップ部品として構成した場合の構成図である。チップ部品は、積層基板内に導体配線が形成されることにより構成されている。図2はこの積層基板の分解斜視図である。この積層基板は所定の導体パターンを含む誘電体または磁性体の基材層の積層体である。図2に示すように、最上層の基材層51aに導体パターン211c,212cが形成され、2層目の基材層51bに導体パターン211b,212bが形成され、3層目の基材層51cに導体パターン211a,212aが形成されている。4層目の基材層51dに導体パターン10a、5層目の基材層51eに導体パターン10b、6層目の基材層51fに導体パターン10cがそれぞれ形成されている。7層目の基材層51gに導体パターン221a,222aが形成され、8層目の基材層51hに導体パターン221b,222bが形成され、9層目の基材層51iに導体パターン221c,222cが形成されている。10層目の基材層51jの裏面に端子電極61,62,63,64が形成されている。なお、最上層の基材層51aのさらに上部には図示しない無地の基材層が積層される。   FIG. 2 is a configuration diagram when the high-frequency transformer of FIG. 1A is configured as a chip component. The chip component is configured by forming a conductor wiring in the laminated substrate. FIG. 2 is an exploded perspective view of the laminated substrate. This laminated substrate is a laminated body of a dielectric or magnetic base material layer including a predetermined conductor pattern. As shown in FIG. 2, conductor patterns 211c and 212c are formed on the uppermost substrate layer 51a, conductor patterns 211b and 212b are formed on the second substrate layer 51b, and the third substrate layer 51c is formed. Conductor patterns 211a and 212a are formed on the substrate. The conductive pattern 10a is formed on the fourth base layer 51d, the conductive pattern 10b is formed on the fifth base layer 51e, and the conductive pattern 10c is formed on the sixth base layer 51f. Conductive patterns 221a and 222a are formed on the seventh base layer 51g, conductive patterns 221b and 222b are formed on the eighth base layer 51h, and conductive patterns 221c and 222c are formed on the ninth base layer 51i. Is formed. Terminal electrodes 61, 62, 63, 64 are formed on the back surface of the tenth substrate layer 51j. A plain base material layer (not shown) is laminated on the upper part of the uppermost base material layer 51a.

前記端子電極61,62,63,64は図1に示した端子P1,P2,P3,P4にそれぞれ相当する。
導体パターン10a,10b,10cはコイル素子L10に相当する。
The terminal electrodes 61, 62, 63 and 64 correspond to the terminals P1, P2, P3 and P4 shown in FIG.
Conductive patterns 10a, 10b, and 10c correspond to coil element L10.

導体パターン211a,211b,211cはコイル素子L211に相当し、導体パターン212a,212b,212cはコイル素子L212に相当する。
導体パターン221a,221b,221cはコイル素子L221に相当し、導体パターン222a,222b,222cはコイル素子L222に相当する。
The conductor patterns 211a, 211b, and 211c correspond to the coil element L211 and the conductor patterns 212a, 212b, and 212c correspond to the coil element L212.
The conductor patterns 221a, 221b, and 221c correspond to the coil element L221, and the conductor patterns 222a, 222b, and 222c correspond to the coil element L222.

基材層51jにはグランド導体65が形成されている。このグランド導体65は、上記複数の導体パターンによるコイル素子と実装先の回路との間に配置されることになるので、上記複数の導体パターンはグランド導体65によって、実装先の回路から遮蔽される。但し、このグランド導体は必須ではない。チップ部品の状態でコイル素子の遮蔽が不要である場合には上記グランド導体は不要である。   A ground conductor 65 is formed on the base material layer 51j. Since the ground conductor 65 is disposed between the coil element having the plurality of conductor patterns and the circuit at the mounting destination, the plurality of conductor patterns are shielded from the circuit at the mounting destination by the ground conductor 65. . However, this ground conductor is not essential. If the shielding of the coil element is unnecessary in the state of the chip component, the ground conductor is unnecessary.

図2中縦方向に延びる線は層間接続導体(ビア導体)であり、導体パターンと導体パターンとを接続し、また、導体パターンと端子電極とを接続する。   A line extending in the vertical direction in FIG. 2 is an interlayer connection conductor (via conductor), which connects the conductor pattern and the conductor pattern, and connects the conductor pattern and the terminal electrode.

前記各導体パターンには、銀や銅などの導電性材料を主成分として形成することができる。基材層51a〜51j等には、誘電体であればガラスセラミック材料、エポキシ系樹脂材料などを用いることができ、磁性体であればフェライトセラミック材料やフェライトを含有する樹脂材料などを用いることができる。基材層用の材料としては、特に、UHF帯用の高結合度トランスを形成する場合は誘電体材料を用いることが好ましく、HF帯用の高結合度トランスを形成する場合は磁性体材料を用いることが好ましい。   Each conductive pattern can be formed using a conductive material such as silver or copper as a main component. For the base material layers 51a to 51j, a glass ceramic material or an epoxy resin material can be used if it is a dielectric, and a ferrite ceramic material or a resin material containing ferrite is used if it is a magnetic material. it can. As a material for the base layer, it is preferable to use a dielectric material when forming a high-coupling transformer for the UHF band, and when forming a high-coupling transformer for the HF band, a magnetic material is preferably used. It is preferable to use it.

図2に示すように、各導体パターンによるコイル素子L10,L211,L221は、それぞれのコイル巻回軸が一致するように(コイル巻回軸が同一直線になって、コイル素子L10,L211,L221が同軸関係になるように)配置されている。また、コイル素子L212,L222は、それぞれのコイル巻回軸が一致するように(コイル巻回軸が同一直線になって、コイル素子L10,L211,L221が同軸関係になるように)配置されている。すなわちコイル巻回軸が積層体の主面に対し垂直になるように、各導体パターンが基材層に形成されている。   As shown in FIG. 2, the coil elements L10, L211 and L221 of the respective conductor patterns are arranged so that their coil winding axes coincide (the coil winding axes are the same straight line, and the coil elements L10, L211 and L221 are the same). Are arranged in a coaxial relationship. The coil elements L212 and L222 are arranged so that their coil winding axes coincide with each other (so that the coil winding axes are the same straight line and the coil elements L10, L211 and L221 are in a coaxial relationship). Yes. That is, each conductor pattern is formed on the base material layer so that the coil winding axis is perpendicular to the main surface of the laminate.

以上に示した実施形態によれば、1次−2次間の磁束の向きによる閉じ込め効果に加え、隣接した2次側コイル素子を通る磁束が閉ループを形成することの効果により、薄くてもインダクタンス値の大きい低損失なコイルが得られる。そのため、従来よりも小型、薄型で損失が小さく、1次−2次間の結合量が大きいトランスが実現できる。   According to the embodiment shown above, in addition to the confinement effect due to the direction of the magnetic flux between the primary and secondary sides, the magnetic flux passing through the adjacent secondary coil element forms a closed loop, so that even if it is thin, the inductance A large and low loss coil can be obtained. Therefore, it is possible to realize a transformer that is smaller and thinner than conventional ones and has a small loss and a large coupling amount between the primary and secondary sides.

《第2の実施形態》
図3(a)、図3(b)は第2の実施形態の高周波トランス102A,102Bの回路図である。この高周波トランス102A,102Bは互いに平行な3つの巻回軸AX1,AX2,AX3を有する。
<< Second Embodiment >>
3A and 3B are circuit diagrams of the high-frequency transformers 102A and 102B according to the second embodiment. The high-frequency transformers 102A and 102B have three winding axes AX1, AX2, and AX3 that are parallel to each other.

図3(a)の例では、高周波トランス102Aは、1次側コイル素子L10と2次側コイル素子L211,L212,L213,L221,L222,L223を備えている。図3(b)の例では、高周波トランス102Bは、1次側コイル素子L11,L12と2次側コイル素子L211,L212,L213,L221,L222,L223を備えている。   In the example of FIG. 3A, the high-frequency transformer 102A includes a primary side coil element L10 and secondary side coil elements L211, L212, L213, L221, L222, and L223. In the example of FIG. 3B, the high frequency transformer 102B includes primary side coil elements L11 and L12 and secondary side coil elements L211, L212, L213, L221, L222, and L223.

1次−2次側の磁束の向きや隣接するコイルどうしの磁束の向きは第1の実施形態で示したものと同様である。このように巻回軸が3つ以上であっても同様の構成を連続させることにより同じ効果を得ることができる。   The direction of the primary-secondary magnetic flux and the direction of the magnetic flux between adjacent coils are the same as those shown in the first embodiment. Thus, even if there are three or more winding shafts, the same effect can be obtained by continuing the same configuration.

この第2の実施形態によれば、1次側コイル素子と2次側コイル素子とが上下左右対称に配置されているので、端子P1〜P4に対してよりバランス良く寄生容量や寄生インダクタンスが付くことになり、これらの寄生成分による影響が効果的に打ち消される。   According to the second embodiment, since the primary side coil element and the secondary side coil element are arranged vertically and horizontally symmetrically, parasitic capacitance and parasitic inductance are attached to the terminals P1 to P4 in a more balanced manner. As a result, the effects of these parasitic components are effectively counteracted.

なお、三つ以上の巻回軸がある場合に、積層体の内側に配置するコイル素子は図3(a)のように、複数の巻回軸(AX1,AX2,AX3)のうち中央寄りの巻回軸(AX2)に沿って設けると、内側のコイル素子(L10)からの磁束の漏れがより抑制される、という点で効果的である。   In addition, when there are three or more winding axes, the coil element disposed inside the laminated body is closer to the center of the plurality of winding axes (AX1, AX2, AX3) as shown in FIG. Providing along the winding axis (AX2) is effective in that leakage of magnetic flux from the inner coil element (L10) is further suppressed.

《第3の実施形態》
図4は第3の実施形態の高周波トランス103の回路図である。この高周波トランス103は複数のコイル素子が3次元配置されている。この例では、互いに平行な4つの巻回軸AX11,AX12,AX21,AX22を有し、巻回軸AX11,AX12を含む面と巻回軸AX21,AX22を含む面とは平行である。また、巻回軸AX11,AX21を含む面と巻回軸AX12,AX22を含む面とは平行である。さらに、この例では巻回軸AX11,AX12を含む面と巻回軸AX11,AX21を含む面とは直交している。
<< Third Embodiment >>
FIG. 4 is a circuit diagram of the high-frequency transformer 103 of the third embodiment. The high-frequency transformer 103 has a plurality of coil elements arranged three-dimensionally. In this example, there are four winding axes AX11, AX12, AX21, and AX22 that are parallel to each other, and the surface that includes the winding axes AX11 and AX12 is parallel to the surface that includes the winding axes AX21 and AX22. Further, the plane including the winding axes AX11 and AX21 and the plane including the winding axes AX12 and AX22 are parallel. Further, in this example, the plane including the winding axes AX11 and AX12 and the plane including the winding axes AX11 and AX21 are orthogonal to each other.

巻回軸AX11,AX12に沿って配置されているコイル素子で一組のトランスが構成され、巻回軸AX21,AX22に沿って配置されているコイル素子でもう一組のトランスが構成され、この二組のトランスが端子P1−P2に対しておよび端子P3−P4に対してそれぞれ並列に接続されている。   One set of transformers is constituted by coil elements arranged along the winding axes AX11, AX12, and another set of transformers is constituted by coil elements arranged along the winding axes AX21, AX22. Two sets of transformers are connected in parallel to terminals P1-P2 and to terminals P3-P4, respectively.

巻回軸AX11,AX12,AX21,AX22にそれぞれ平行な仮想中心軸に対して各コイル素子の配置が180度回転対称となるように各コイル素子は配置されている。すなわち、巻回軸AX11に1次側コイル素子L11および2次側コイル素子L2111,L2211が配置され、巻回軸AX12に2次側コイル素子L2121,L2221が配置されている。同様に、巻回軸AX22に1次側コイル素子L12および2次側コイル素子L2112,L2212が配置され、巻回軸AX21に2次側コイル素子L2122,L2222が配置されている。   The coil elements are arranged so that the arrangement of the coil elements is 180-degree rotationally symmetric with respect to virtual center axes parallel to the winding axes AX11, AX12, AX21, and AX22. That is, the primary side coil element L11 and the secondary side coil elements L2111 and L2211 are arranged on the winding axis AX11, and the secondary side coil elements L2121 and L2221 are arranged on the winding axis AX12. Similarly, the primary side coil element L12 and the secondary side coil element L2112, L2212 are arrange | positioned at winding axis AX22, and the secondary side coil element L2122, L2222 is arrange | positioned at winding axis AX21.

この第3の実施形態によれば、限られた空間により多くのコイル素子を配置することができるので、より小型薄型で低損失な高周波トランスが構成できる。   According to the third embodiment, since many coil elements can be arranged in a limited space, a smaller, thinner and lower loss high frequency transformer can be configured.

また、端子P1〜P4に対してバランス良く寄生容量や寄生インダクタンスが付くことになり、これらの寄生成分による影響が効果的に打ち消される。   Further, parasitic capacitance and parasitic inductance are attached to the terminals P1 to P4 in a well-balanced manner, and the influence of these parasitic components is effectively canceled out.

《第4の実施形態》
図5(a)、図5(b)、図5(c)、図5(d)は第4の実施形態の各高周波トランス104A,104B,104C,104Dの回路図である。いずれも複数の巻回軸の延長線上に垂直なグランド電極G1,G2を設け接地している。
<< Fourth Embodiment >>
FIGS. 5A, 5B, 5C, and 5D are circuit diagrams of the high-frequency transformers 104A, 104B, 104C, and 104D of the fourth embodiment. In any case, vertical ground electrodes G1 and G2 are provided and grounded on the extended lines of a plurality of winding shafts.

図5(a)は図1(a)に示した高周波トランスにグランド電極G1,G2を設けた例、図5(b)は図3(a)に示した高周波トランスにグランド電極G1,G2を設けた例、図5(c)は図3(b)に示した高周波トランスにグランド電極G1,G2を設けた例である。さらに、図5(d)は図4に示した高周波トランスにグランド電極G1,G2を設けた例である。   5A shows an example in which ground electrodes G1 and G2 are provided in the high-frequency transformer shown in FIG. 1A, and FIG. 5B shows ground electrodes G1 and G2 in the high-frequency transformer shown in FIG. FIG. 5C shows an example in which ground electrodes G1 and G2 are provided in the high frequency transformer shown in FIG. 3B. FIG. 5D shows an example in which ground electrodes G1 and G2 are provided in the high-frequency transformer shown in FIG.

この構造により、1次側コイル素子と接地間の寄生容量に比べて2次側コイル素子と接地間の寄生容量が増加する。グランド電極G1,G2と2次側コイル素子との距離を定めることで、寄生容量の値を設定できる。この寄生容量を定めて1次側コイル素子と2次側コイル素子の周波数特性を意図的に変化させることで、インピーダンス変換比に周波数特性をもたせることができる。   With this structure, the parasitic capacitance between the secondary coil element and the ground increases as compared with the parasitic capacitance between the primary coil element and the ground. By determining the distance between the ground electrodes G1 and G2 and the secondary coil element, the value of the parasitic capacitance can be set. By determining the parasitic capacitance and intentionally changing the frequency characteristics of the primary side coil element and the secondary side coil element, the impedance conversion ratio can have the frequency characteristic.

図6は、図5(a)の高周波トランスを積層基板内の導体配線により構成した層構成を示す図である。図6において、基材層51mにグランド電極66、基材層51nにグランド電極67がそれぞれ形成されていて、グランド電極65,66,67はビア導体を介して導通している。   FIG. 6 is a diagram showing a layer configuration in which the high-frequency transformer of FIG. 5A is configured by conductor wiring in the multilayer substrate. In FIG. 6, a ground electrode 66 is formed on the base material layer 51m, and a ground electrode 67 is formed on the base material layer 51n. The ground electrodes 65, 66, and 67 are electrically connected via via conductors.

なお、グランド電極66,67はその両方を積層体の内層に配置してもよいし、両方を外面に配置してもよい。   Both of the ground electrodes 66 and 67 may be disposed on the inner layer of the laminate, or both may be disposed on the outer surface.

このように1次側コイル素子と2次側コイル素子の周波数特性を意図的に変化させることで、周波数に応じてインピーダンス変換比を変化させることができ、広帯域に亘って最適なインピーダンス整合をはかることができる。この高周波トランスの前段後段に接続される回路の例は後の別の実施形態で示す。   Thus, by intentionally changing the frequency characteristics of the primary side coil element and the secondary side coil element, the impedance conversion ratio can be changed according to the frequency, and the optimum impedance matching is achieved over a wide band. be able to. An example of a circuit connected to the front stage and the rear stage of the high-frequency transformer will be described in another later embodiment.

《第5の実施形態》
図7は第5の実施形態の高周波トランス105の回路図である。この高周波トランス105は、2次側コイル素子L211,L212の中間点および2次側コイル素子L221,L222の中間点をそれぞれグランド電極G1,G2に接地している。その他の構成は図5(a)に示した例と同じである。
<< Fifth Embodiment >>
FIG. 7 is a circuit diagram of the high-frequency transformer 105 of the fifth embodiment. In the high-frequency transformer 105, the intermediate point between the secondary coil elements L211 and L212 and the intermediate point between the secondary coil elements L221 and L222 are grounded to the ground electrodes G1 and G2, respectively. Other configurations are the same as the example shown in FIG.

このように、2次側コイル素子の中間点を接地することにより、後に示すように、平衡−不平衡変換回路にそのまま適用できる。   In this way, by grounding the intermediate point of the secondary coil element, it can be applied to a balanced-unbalanced conversion circuit as it is, as will be described later.

《第6の実施形態》
図8は第6の実施形態の高周波部品および通信端末装置の構成図である。図8に示す通信端末装置は高周波回路201、整合回路202、高周波部品203、整合回路204、アンテナ205を備えている。高周波部品203は高周波回路201側の伝送線路のインピーダンスとアンテナ205のインピーダンスとのインピーダンス整合をはかるインピーダンス変換回路として備えている。この高周波部品203の基本構成は図5(a)に示した高周波トランス104Aと同じである。この高周波トランスの端子P1は高周波回路201側の入出力端子、端子P3は接地端子として用いている。また、端子P2とP4は接続してアンテナ205側の入出力端子として用いている。
<< Sixth Embodiment >>
FIG. 8 is a configuration diagram of the high-frequency component and the communication terminal device of the sixth embodiment. The communication terminal device shown in FIG. 8 includes a high frequency circuit 201, a matching circuit 202, a high frequency component 203, a matching circuit 204, and an antenna 205. The high-frequency component 203 is provided as an impedance conversion circuit that performs impedance matching between the impedance of the transmission line on the high-frequency circuit 201 side and the impedance of the antenna 205. The basic configuration of the high-frequency component 203 is the same as that of the high-frequency transformer 104A shown in FIG. A terminal P1 of this high frequency transformer is used as an input / output terminal on the high frequency circuit 201 side, and a terminal P3 is used as a ground terminal. Terminals P2 and P4 are connected and used as an input / output terminal on the antenna 205 side.

第4の実施形態で述べたように、高周波部品203は1次側コイル素子と2次側コイル素子の周波数特性を意図的に変化させることができ、そのことで、周波数に応じてインピーダンス変換比を変化させることができる。アンテナ205のインピーダンスが周波数に応じて変化する場合、このアンテナのインピーダンスの周波数特性に合わせて高周波部品203のインピーダンス変換比に周波数特性をもたせることにより、広帯域に亘って最適なインピーダンス整合をはかることができる。   As described in the fourth embodiment, the high-frequency component 203 can intentionally change the frequency characteristics of the primary side coil element and the secondary side coil element, so that the impedance conversion ratio depends on the frequency. Can be changed. When the impedance of the antenna 205 changes according to the frequency, the impedance conversion ratio of the high-frequency component 203 has a frequency characteristic in accordance with the frequency characteristic of the impedance of the antenna, so that optimum impedance matching can be achieved over a wide band. it can.

《第7の実施形態》
図9は第7の実施形態の高周波部品および通信端末装置の構成図である。図9に示す通信端末装置は高周波回路201、高周波部品206、フィルタ207、アンテナ205を備えている。高周波部品206は高周波回路201側の平衡信号とアンテナ205側の不平衡信号との変換を行う平衡−不平衡変換回路として備えている。この高周波部品206の基本構成は図1(a)に示した高周波トランス101Aと同じである。この高周波トランスの端子P1はアンテナ205側の入出力端子、端子P2は接地端子として用いている。また、端子P3とP4は高周波回路201側の平衡信号の入出力端子として用いている。
<< Seventh Embodiment >>
FIG. 9 is a configuration diagram of the high-frequency component and the communication terminal device of the seventh embodiment. The communication terminal device shown in FIG. 9 includes a high frequency circuit 201, a high frequency component 206, a filter 207, and an antenna 205. The high-frequency component 206 is provided as a balanced-unbalanced conversion circuit that converts a balanced signal on the high-frequency circuit 201 side and an unbalanced signal on the antenna 205 side. The basic configuration of the high-frequency component 206 is the same as that of the high-frequency transformer 101A shown in FIG. A terminal P1 of this high frequency transformer is used as an input / output terminal on the antenna 205 side, and a terminal P2 is used as a ground terminal. Terminals P3 and P4 are used as input / output terminals for balanced signals on the high-frequency circuit 201 side.

このように平衡―不平衡変換を行う高周波部品206を図1(a)に示したような積層基板で構成することで、従来よりも薄型、小型で低損失なバランを構成できる。   By configuring the high-frequency component 206 that performs balanced-unbalanced conversion as described above with the laminated substrate as shown in FIG. 1A, a balun that is thinner, smaller, and lower in loss than the prior art can be configured.

なお、以上に示した各実施形態において、積層体の構成図で示したコイルのターン数は当然ながら例示であり、各コイル素子のタ−ン数はこれらの図に示したものに限らない。   In each of the embodiments described above, the number of turns of the coil shown in the configuration diagram of the laminated body is naturally an example, and the number of turns of each coil element is not limited to that shown in these drawings.

AX1,AX2,AX3…コイル巻回軸
AX11,AX12,AX21,AX22…コイル巻回軸
G1,G2…グランド電極
L10…1次側コイル素子
L11,L12…1次側コイル素子
L211,L212,L213,L221,L222,L223…2次側コイル素子
L2111,L2211…2次側コイル素子
L2121,L2221…2次側コイル素子
L2112,L2212…2次側コイル素子
L2122,L2222…2次側コイル素子
P1,P2,P3,P4…端子
10a,10b,10c…導体パターン
51a〜51k…基材層
51m,51n…基材層
61,62,63,64…端子電極
65,66,67…グランド電極
101A,101B…高周波トランス
102A,102B…高周波トランス
103…高周波トランス
104A,104B,104C,104D…高周波トランス
105…高周波トランス
201…高周波回路
202,204…整合回路
203,206…高周波部品
205…アンテナ
207…フィルタ
211a,211b,211c…導体パターン
212a,212b,212c…導体パターン
221a,221b,221c…導体パターン
222a,222b,222c…導体パターン
AX1, AX2, AX3 ... Coil winding axes AX11, AX12, AX21, AX22 ... Coil winding axes G1, G2 ... Ground electrodes L10 ... Primary coil elements L11, L12 ... Primary coil elements L211, L212, L213 L2211, L222, L223 ... Secondary coil elements L2111, L2211 ... Secondary coil elements L2121, L2221 ... Secondary coil elements L2112, L2212 ... Secondary coil elements L2122, L2222 ... Secondary coil elements P1, P2 , P3, P4 ... terminals 10a, 10b, 10c ... conductor patterns 51a to 51k ... base material layers 51m, 51n ... base material layers 61, 62, 63, 64 ... terminal electrodes 65, 66, 67 ... ground electrodes 101A, 101B ... High frequency transformers 102A, 102B ... High frequency transformer 103 ... High frequency transformer 1 4A, 104B, 104C, 104D ... high frequency transformer 105 ... high frequency transformer 201 ... high frequency circuit 202, 204 ... matching circuit 203, 206 ... high frequency component 205 ... antenna 207 ... filter 211a, 211b, 211c ... conductor pattern 212a, 212b, 212c ... Conductor patterns 221a, 221b, 221c ... Conductor patterns 222a, 222b, 222c ... Conductor patterns

Claims (6)

一つまたは複数のコイル巻回軸を有する1次側コイル素子および互いに平行な複数のコイル巻回軸を有する2次側コイル素子を備え、
前記1次側コイル素子のコイル巻回軸は前記2次側コイル素子のコイル巻回軸に一致する共通のコイル巻回軸であり、
前記共通のコイル巻回軸上に1次側コイル素子と2次側コイル素子との境界を2以上有するように、前記1次側コイル素子および前記2次側コイル素子が配列され、
前記複数のコイル巻回軸のうち隣り合うコイル巻回軸上に配置された、第1の2次側コイル素子と第2の2次側コイル素子は直列に接続されて、この第1の2次側コイル素子と第2の2次側コイル素子を通る磁束が閉ループを構成するように、前記第1の2次側コイル素子および前記第2の2次側コイル素子の巻回方向および接続の向きが定められたことを特徴とする高周波トランス。
A primary coil element having one or a plurality of coil winding axes and a secondary coil element having a plurality of coil winding axes parallel to each other;
The coil winding axis of the primary side coil element is a common coil winding axis that matches the coil winding axis of the secondary side coil element,
The primary coil element and the secondary coil element are arranged so as to have two or more boundaries between the primary coil element and the secondary coil element on the common coil winding axis,
The first secondary coil element and the second secondary coil element arranged on the adjacent coil winding axis among the plurality of coil winding axes are connected in series, and the first 2 The winding direction and connection of the first secondary coil element and the second secondary coil element so that the magnetic flux passing through the secondary coil element and the second secondary coil element forms a closed loop. A high-frequency transformer characterized in that its orientation is determined.
前記共通のコイル巻回軸を有する1次側コイル素子同士、または前記共通のコイル巻回軸を有する2次側コイル素子同士は、互いに巻回方向が逆であり、且つ電流の向きが逆になるように接続された、請求項1に記載の高周波トランス。   The primary side coil elements having the common coil winding axis or the secondary side coil elements having the common coil winding axis have opposite winding directions and reverse current directions. The high-frequency transformer according to claim 1, connected in such a manner. 前記1次側コイル素子および前記2次側コイル素子は、複数の誘電体層または磁性体層が積層された積層体内に配置された導体パターンおよび層間を接続するビア導体で構成され、前記コイル巻回軸が前記積層体の主面に対し垂直になるように前記導体パターンおよび前記ビア導体が配置された、請求項1または2に記載の高周波トランス。   The primary side coil element and the secondary side coil element are configured by a conductor pattern disposed in a laminated body in which a plurality of dielectric layers or magnetic layers are laminated and via conductors connecting the layers, and the coil winding The high-frequency transformer according to claim 1 or 2, wherein the conductor pattern and the via conductor are arranged so that a rotation axis is perpendicular to a main surface of the multilayer body. 前記積層体の内層または外面に前記1次側コイル素子および前記2次側コイル素子を挟むグランド導体層を備えた、請求項1〜3のいずれかに記載の高周波トランス。   The high frequency transformer according to any one of claims 1 to 3, further comprising a ground conductor layer sandwiching the primary side coil element and the secondary side coil element on an inner layer or an outer surface of the multilayer body. 高周波トランスを備えた高周波部品において、
前記高周波トランスは、
一つまたは複数のコイル巻回軸を有する1次側コイル素子および互いに平行な複数のコイル巻回軸を有する2次側コイル素子を備え、
前記1次側コイル素子のコイル巻回軸は前記2次側コイル素子のコイル巻回軸に一致する共通のコイル巻回軸であり、
前記共通のコイル巻回軸上に1次側コイル素子と2次側コイル素子との境界を2以上有するように、前記1次側コイル素子および前記2次側コイル素子が配列され、
前記複数のコイル巻回軸のうち隣り合うコイル巻回軸上に配置された、第1の2次側コイル素子と第2の2次側コイル素子は直列に接続されて、この第1の2次側コイル素子と第2の2次側コイル素子を通る磁束が閉ループを構成するように、前記第1の2次側コイル素子および前記第2の2次側コイル素子の巻回方向および接続の向きが定められたことを特徴とする高周波部品。
In high frequency components with high frequency transformers,
The high-frequency transformer is
A primary coil element having one or a plurality of coil winding axes and a secondary coil element having a plurality of coil winding axes parallel to each other;
The coil winding axis of the primary side coil element is a common coil winding axis that matches the coil winding axis of the secondary side coil element,
The primary coil element and the secondary coil element are arranged so as to have two or more boundaries between the primary coil element and the secondary coil element on the common coil winding axis,
The first secondary coil element and the second secondary coil element arranged on the adjacent coil winding axis among the plurality of coil winding axes are connected in series, and the first 2 The winding direction and connection of the first secondary coil element and the second secondary coil element so that the magnetic flux passing through the secondary coil element and the second secondary coil element forms a closed loop. A high-frequency component characterized by its orientation.
通信信号の伝送部に高周波トランスを備えた通信端末装置において、
前記高周波トランスは、
一つまたは複数のコイル巻回軸を有する1次側コイル素子および互いに平行な複数のコイル巻回軸を有する2次側コイル素子を備え、
前記1次側コイル素子のコイル巻回軸は前記2次側コイル素子のコイル巻回軸に一致する共通のコイル巻回軸であり、
前記共通のコイル巻回軸上に1次側コイル素子と2次側コイル素子との境界を2以上有するように、前記1次側コイル素子および前記2次側コイル素子が配列され、
前記複数のコイル巻回軸のうち隣り合うコイル巻回軸上に配置された、第1の2次側コイル素子と第2の2次側コイル素子は直列に接続されて、この第1の2次側コイル素子と第2の2次側コイル素子を通る磁束が閉ループを構成するように、前記第1の2次側コイル素子および前記第2の2次側コイル素子の巻回方向および接続の向きが定められたことを特徴とする通信端末装置。
In a communication terminal device equipped with a high-frequency transformer in the communication signal transmission unit,
The high-frequency transformer is
A primary coil element having one or a plurality of coil winding axes and a secondary coil element having a plurality of coil winding axes parallel to each other;
The coil winding axis of the primary side coil element is a common coil winding axis that matches the coil winding axis of the secondary side coil element,
The primary coil element and the secondary coil element are arranged so as to have two or more boundaries between the primary coil element and the secondary coil element on the common coil winding axis,
The first secondary coil element and the second secondary coil element arranged on the adjacent coil winding axis among the plurality of coil winding axes are connected in series, and the first 2 The winding direction and connection of the first secondary coil element and the second secondary coil element so that the magnetic flux passing through the secondary coil element and the second secondary coil element forms a closed loop. A communication terminal device characterized in that a direction is determined.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015068614A1 (en) * 2013-11-05 2015-05-14 株式会社村田製作所 Impedance-conversion-ratio setting method, impedance conversion circuit, and communication-terminal device
CN106209010A (en) * 2016-07-25 2016-12-07 宜确半导体(苏州)有限公司 A kind of intelligent terminal and balun thereof
JP2019110237A (en) * 2017-12-19 2019-07-04 三菱電機株式会社 Transformer, manufacturing method of the transformer, and semiconductor device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074006A (en) * 1983-07-14 1985-04-26 ブル−ム・ベタイリグングスゲゼルシャフト・ミット・ベシュレンクテル・ハフツング Controllable voltage conversion electric machine
JPS6226010U (en) * 1985-07-29 1987-02-17
JPH0362908A (en) * 1989-08-01 1991-03-19 Tdk Corp Laminated type bifilar winding transformer
JPH04142714A (en) * 1990-10-03 1992-05-15 Murata Mfg Co Ltd Solid transformer and manufacture thereof
JPH08213239A (en) * 1995-02-03 1996-08-20 Fuji Elelctrochem Co Ltd Laminated chip transformer and manufacture thereof
JPH11214943A (en) * 1998-01-26 1999-08-06 Murata Mfg Co Ltd Balloon transformer
JP2003273686A (en) * 2002-03-14 2003-09-26 Toko Inc Laminated electronic component
JP2008198929A (en) * 2007-02-15 2008-08-28 Sony Corp Balun transformer, mounting structure of the same, and electronic apparatus in which the mounting structure is built-in

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074006A (en) * 1983-07-14 1985-04-26 ブル−ム・ベタイリグングスゲゼルシャフト・ミット・ベシュレンクテル・ハフツング Controllable voltage conversion electric machine
JPS6226010U (en) * 1985-07-29 1987-02-17
JPH0362908A (en) * 1989-08-01 1991-03-19 Tdk Corp Laminated type bifilar winding transformer
JPH04142714A (en) * 1990-10-03 1992-05-15 Murata Mfg Co Ltd Solid transformer and manufacture thereof
JPH08213239A (en) * 1995-02-03 1996-08-20 Fuji Elelctrochem Co Ltd Laminated chip transformer and manufacture thereof
JPH11214943A (en) * 1998-01-26 1999-08-06 Murata Mfg Co Ltd Balloon transformer
JP2003273686A (en) * 2002-03-14 2003-09-26 Toko Inc Laminated electronic component
JP2008198929A (en) * 2007-02-15 2008-08-28 Sony Corp Balun transformer, mounting structure of the same, and electronic apparatus in which the mounting structure is built-in

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015068614A1 (en) * 2013-11-05 2015-05-14 株式会社村田製作所 Impedance-conversion-ratio setting method, impedance conversion circuit, and communication-terminal device
JP6048593B2 (en) * 2013-11-05 2016-12-21 株式会社村田製作所 Impedance conversion ratio setting method
US9893708B2 (en) 2013-11-05 2018-02-13 Murata Manufacturing Co., Ltd. Impedance conversion ratio setting method, impedance conversion circuit, and communication terminal apparatus
CN106209010A (en) * 2016-07-25 2016-12-07 宜确半导体(苏州)有限公司 A kind of intelligent terminal and balun thereof
JP2019110237A (en) * 2017-12-19 2019-07-04 三菱電機株式会社 Transformer, manufacturing method of the transformer, and semiconductor device
US11114377B2 (en) 2017-12-19 2021-09-07 Mitsubishi Electric Corporation Transformer, transformer manufacturing method and semiconductor device

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