JP2012226119A5 - - Google Patents

Download PDF

Info

Publication number
JP2012226119A5
JP2012226119A5 JP2011093772A JP2011093772A JP2012226119A5 JP 2012226119 A5 JP2012226119 A5 JP 2012226119A5 JP 2011093772 A JP2011093772 A JP 2011093772A JP 2011093772 A JP2011093772 A JP 2011093772A JP 2012226119 A5 JP2012226119 A5 JP 2012226119A5
Authority
JP
Japan
Prior art keywords
resist composition
producing
chemically amplified
irradiation
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011093772A
Other languages
English (en)
Japanese (ja)
Other versions
JP5518787B2 (ja
JP2012226119A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011093772A priority Critical patent/JP5518787B2/ja
Priority claimed from JP2011093772A external-priority patent/JP5518787B2/ja
Publication of JP2012226119A publication Critical patent/JP2012226119A/ja
Publication of JP2012226119A5 publication Critical patent/JP2012226119A5/ja
Application granted granted Critical
Publication of JP5518787B2 publication Critical patent/JP5518787B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011093772A 2011-04-20 2011-04-20 化学増幅型レジスト組成物の製造方法及びフォトマスクブランク Active JP5518787B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011093772A JP5518787B2 (ja) 2011-04-20 2011-04-20 化学増幅型レジスト組成物の製造方法及びフォトマスクブランク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011093772A JP5518787B2 (ja) 2011-04-20 2011-04-20 化学増幅型レジスト組成物の製造方法及びフォトマスクブランク

Publications (3)

Publication Number Publication Date
JP2012226119A JP2012226119A (ja) 2012-11-15
JP2012226119A5 true JP2012226119A5 (cg-RX-API-DMAC10.html) 2013-04-11
JP5518787B2 JP5518787B2 (ja) 2014-06-11

Family

ID=47276359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011093772A Active JP5518787B2 (ja) 2011-04-20 2011-04-20 化学増幅型レジスト組成物の製造方法及びフォトマスクブランク

Country Status (1)

Country Link
JP (1) JP5518787B2 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7742267B2 (ja) * 2021-09-28 2025-09-19 富士フイルム株式会社 感光性組成物の検査方法、及び感光性組成物の製造方法
WO2023053833A1 (ja) * 2021-09-30 2023-04-06 富士フイルム株式会社 感光性組成物の検定方法、感光性組成物の製造方法
JP7814977B2 (ja) * 2022-02-28 2026-02-17 富士フイルム株式会社 レジスト組成物の製造方法、及びレジスト組成物の検定方法

Similar Documents

Publication Publication Date Title
Ngan et al. Motif-based defect detection for patterned fabric
EP2500775A3 (en) Patterning process and composition for forming silicon-containing film usable therefor
GB2488250A (en) Methods of directed self-assembly with 193 - nm immersion lithography and layered structures formed therefrom
PT1989740E (pt) Método de marcação de células solares e célula solar
EP2666057A1 (en) Chemical amplification resist composition, resist film using the composition, resist-coated mask blanks, resist pattern forming method, photomask and polymer compound
WO2013189724A3 (en) Method of determining focus, inspection apparatus, patterning device, substrate and device manufacturing method
JP2014143415A5 (cg-RX-API-DMAC10.html)
JP2013518799A5 (cg-RX-API-DMAC10.html)
WO2009108323A3 (en) Real time imprint process diagnostics for defects
ATE540803T1 (de) Verfahren zum schichtweisen herstellen eines dreidimensionalen objekts
WO2012051082A3 (en) Method and system for forming high accuracy patterns using charged particle beam lithography
WO2011050272A3 (en) Nanoantenna arrays for nanospectroscopy, methods of use and methods of high-throughput nanofabrication
JP2010532429A5 (cg-RX-API-DMAC10.html)
JP2011073284A5 (cg-RX-API-DMAC10.html)
WO2011094317A3 (en) Micro-conformal templates for nanoimprint lithography
Xu et al. Interfacial Defects Dictated In Situ Fabrication of Yolk–Shell Upconversion Nanoparticles by Electron‐Beam Irradiation
EP2863259A3 (en) Method for manufacturing photomask blank
WO2011143013A3 (en) Method for integrated circuit design and manufacture using diagonal minimum-width patterns
WO2013010111A3 (en) Nanoimprint lithography
RU2007124033A (ru) Способ изготовления литографической маски для liga-технологии
AR087344A1 (es) Formas polimorficas del acido 5-(3,3-dimetil-but-1-inil)-3-[(trans-4-hidroxi-ciclohexil)-(trans-4-metil-ciclohexancarbonil)-amino]-tiofen-2-carboxilico y su uso en el tratamiento de la hepatitis c
RU2010131745A (ru) Рентгенолитографический шаблон и способ его изготовления
JP2015106512A5 (cg-RX-API-DMAC10.html)
CN101477096A (zh) 一种聚合物平面纳米沟道制作方法
CN103539367A (zh) 一种提高钢渣活性的方法