JP2012222117A - Translocation jig of semiconductor wafer - Google Patents

Translocation jig of semiconductor wafer Download PDF

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JP2012222117A
JP2012222117A JP2011085739A JP2011085739A JP2012222117A JP 2012222117 A JP2012222117 A JP 2012222117A JP 2011085739 A JP2011085739 A JP 2011085739A JP 2011085739 A JP2011085739 A JP 2011085739A JP 2012222117 A JP2012222117 A JP 2012222117A
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semiconductor wafer
transfer jig
wafers
jig
wafer
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Hideyuki Ariizumi
秀之 有泉
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Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a jig capable of efficiently and collectively taking out wafers stored in a case with a groove.SOLUTION: A translocation jig for a semiconductor wafer has a semi-cylindrical shaped surface having an almost U-shaped cross section with a part being opened, and a semi-cylindrical shaped end surface in an axial direction, and is in contact with the outer periphery of a wafer at inside end edges facing each other in parallel of the open part of the U-shaped cross section. The jig, with the open part of the U-shaped cross section directed downward, is stacked on a case with grooves which is horizontally placed and in which a plurality of wafers are stored. Both of them are inverted upside down so that the plurality of wafers are translocated to the jig from the case with grooves. The wafers are held at the inside end edges facing each other in parallel of the open part of the U-shaped cross section, and then the jig is raised and the plurality of wafers held inside the jig are stacked together with no gap. Each wafer or an arbitrary number of wafers in the stacked state are taken from the staked wafers.

Description

本発明は、半導体ウェハの各製造過程において、ケースに収納された複数のウェハの一括取り出しと移し替えを行う治具に関するものである。 The present invention relates to a jig for collectively taking out and transferring a plurality of wafers stored in a case in each manufacturing process of a semiconductor wafer.

従来、半導体ウェハの各製造過程において用いられているウェハの収納ケースの内部には多数の平行な溝があり、各溝ごとにウェハが1枚ずつ収められている(例えば、図1(b)参照)。収納ケースからウェハを取り出し、別の容器に移し替えする際に、従来は1枚ずつバキュームピンセットや金属ピンセットを用いた手作業にてウェハを容器から抜き取っていた。しかし、手作業では、効率が上がらないばかりか、ハンドリング作業によるミス(ウェハ表裏の反転、ウェハの並び順間違え、ウェハの損傷)も発生した。 Conventionally, there are a large number of parallel grooves inside a wafer storage case used in each manufacturing process of a semiconductor wafer, and one wafer is stored in each groove (for example, FIG. 1B). reference). When taking out a wafer from a storage case and transferring it to another container, conventionally, the wafers were manually pulled out from the container one by one using vacuum tweezers or metal tweezers. However, the manual operation not only did not increase the efficiency, but also caused an error due to the handling operation (inversion of the wafer front and back, misalignment of the wafers, damage to the wafer).

かかる従来の移し替え作業を効率化するため、特許文献1には、6.35mmの収納ピッチで運搬ケースに収納された25枚の半導体ウェハを、半分の3.175mmの収納ピッチの容器本体内に移し替え、収納して移送、保管するウェハ容器が開示されている。特許文献1では、まず運搬ケースに収納された25枚の約半数を3.175mmピッチの容器の収納溝に1溝置きに移し替えした後、残る約半数を3.175mmピッチの容器の収納溝の空いている溝に移し替えることで、ウェハを運搬ケースから収納ピッチが半分の容器に移し替えて収納している。 In order to improve the efficiency of such conventional transfer work, Patent Document 1 discloses that 25 semiconductor wafers stored in a transport case with a storage pitch of 6.35 mm are placed in a container body having a storage pitch of half of 3.175 mm. A wafer container is disclosed which is transferred to, housed, transferred and stored. In Patent Document 1, first, about half of the 25 sheets housed in the transport case are transferred to every other groove in the container groove of 3.175 mm pitch, and the remaining half is stored in the container groove of 3.175 mm pitch. By transferring to the empty groove, the wafer is transferred from the carrying case to a container having a half storage pitch and stored.

しかし、特許文献1の発明では、移し替え作業が2段階となるばかりでなく、移し替え後もウェハは溝に収まるので、ここから1枚ずつ取り出すには、従来と同様の手作業を行う必要があり、収納ピッチが半分になっている分だけ、取り出し作業はより困難となるといった不具合を有する。 However, in the invention of Patent Document 1, not only is the transfer operation performed in two stages, but also after the transfer, the wafer will fit in the groove, and in order to take out one by one from here, it is necessary to perform the same manual operation as before. There is a problem that the taking out operation becomes more difficult as the storage pitch is halved.

特開2003−318248号公報JP 2003-318248 A

本発明の課題は、従来技術の上記不具合を解消し、ウェハを収納する溝付きケースに入っているウェハをハンドリング作業によるミスなく一括して効率的に取り出すことができる治具を提供することを目的とする。 An object of the present invention is to solve the above-mentioned problems of the prior art, and to provide a jig that can efficiently and collectively take out wafers contained in a grooved case for storing wafers without any error due to handling work. Objective.

請求項1の発明は、ウェハを溝付きケースから移し替える治具であって、一部が開口する略U字形断面の半円筒形状の側面と、半円筒形状の軸方向に端面とを有し、ウェハの外周に対し、U字形断面の開口部の平行に対向する内側端縁部で接触することを特徴とする半導体ウェハの移し替え治具である。 The invention of claim 1 is a jig for transferring a wafer from a grooved case, and has a semi-cylindrical side surface of a substantially U-shaped cross section that is partially open and an end surface in the axial direction of the semi-cylindrical shape. The semiconductor wafer transfer jig is characterized in that it contacts the outer periphery of the wafer at the inner end edge of the U-shaped cross-section facing the parallel edge.

請求項2の発明は、前記対向する内側端縁部間の距離をウェハの直径よりも小さくした半導体ウェハの移し替え治具である。 The invention of claim 2 is a semiconductor wafer transfer jig in which the distance between the opposed inner edge portions is smaller than the diameter of the wafer.

請求項3の発明は、前記対向する内側端縁部間の距離をウェハの直径の90.0〜99.8%とした半導体ウェハの移し替え治具である。 According to a third aspect of the present invention, there is provided a semiconductor wafer transfer jig in which the distance between the opposed inner edge portions is 90.0 to 99.8% of the wafer diameter.

請求項4の発明は、U字形断面の内底部にウェハのオリエンテーションフラットに対応するフラット面を形成した半導体ウェハの移し替え治具である。 According to a fourth aspect of the present invention, there is provided a semiconductor wafer transfer jig in which a flat surface corresponding to the orientation flat of the wafer is formed on the inner bottom portion of the U-shaped cross section.

請求項5の発明は、溝付きケースの開口部に対して半導体ウェハの移し替え治具の開口部を一致させて重ねる位置決め部を開口部に有する半導体ウェハの移し替え治具である。 According to a fifth aspect of the present invention, there is provided a semiconductor wafer transfer jig having a positioning portion in the opening portion for overlapping the opening portion of the semiconductor wafer transfer jig so as to coincide with the opening portion of the grooved case.

請求項6の発明は、請求項1、請求項2、請求項3、請求項4又は請求項5に記載の半導体ウェハの移し替え治具の使用方法であって、ウェハを複数枚収納して水平に載置された溝付きケースに、前記半導体ウェハの移し替え治具のU字形断面の開口部を下にして、半導体ウェハの移し替え治具を溝付きケースに重ね、両者を上下反転して複数枚のウェハを溝付きケースから半導体ウェハの移し替え治具に移し替え、ウェハをU字形断面の開口部の平行に対向する内側端縁部で保持した後、半導体ウェハの移し替え治具を起こして前記治具内部に保持した複数枚のウェハを隙間無く積層させ、積層した状態のウェハからウェハを1枚ごとあるいは積層状態のままで任意の枚数ごと取り出すことを特徴とする半導体ウェハの移し替え治具の使用方法である。 The invention of claim 6 is a method of using the semiconductor wafer transfer jig according to claim 1, claim 2, claim 3, claim 4 or claim 5, wherein a plurality of wafers are stored. Place the semiconductor wafer transfer jig on the grooved case with the U-shaped cross-section opening of the semiconductor wafer transfer jig facing down on the horizontally mounted grooved case, and turn them upside down. Transfer multiple wafers from the grooved case to a semiconductor wafer transfer jig, hold the wafer at the inner edge of the U-shaped cross section facing the parallel inner edge, and then transfer the semiconductor wafer And a plurality of wafers held inside the jig are laminated without gaps, and the wafers are taken out from the laminated wafers one by one or any number of wafers in the laminated state. Use of transfer jig It is the law.

請求項1の発明の半導体ウェハの移し替え治具は、溝を持たず、略円筒を軸方向に2分した形状としたので、軸方向に広い開口を有し、移し替え時のウェハの半径方向移動距離が極めて短く、ウェハへの衝撃が少なく、ウェハの破損を防止できる。移し替え後のウェハは溝に拘束されずに直接積層された状態となるので、ウェハの収納密度が高く、最もコンパクトに収納することができる。また、収納したウェハは任意の枚数で容易に治具の開口部から取り出すことができる。さらに半導体ウェハの移し替え治具の軸方向長さを長く取ることにより、複数の溝付きケースに収容されたウェハを一つの半導体ウェハの移し替え治具で同時に受け取ることができる。 Since the semiconductor wafer transfer jig according to the first aspect of the present invention has no groove and has a substantially cylindrical shape divided into two in the axial direction, it has a wide opening in the axial direction, and the radius of the wafer at the time of transfer The direction moving distance is extremely short, the impact on the wafer is small, and damage to the wafer can be prevented. Since the transferred wafer is directly stacked without being constrained by the groove, the storage density of the wafer is high and the wafer can be stored in the most compact manner. In addition, any number of stored wafers can be easily taken out from the opening of the jig. Furthermore, by making the axial length of the semiconductor wafer transfer jig long, the wafers accommodated in the plurality of grooved cases can be simultaneously received by one semiconductor wafer transfer jig.

請求項2及び請求項3の発明では、前記移し替え治具のU字形断面の開口部の平行に対向する内側端縁部間の距離、すなわち、ウェハの外周と前記移し替え治具との接触点の2点間距離は、ウェハの直径よりも小さく、具体的にはウェハの直径の90.0〜99.8%に設定されるので、半導体ウェハの移し替え治具は、ウェハと対向する内側端縁部とによる楔効果によってウェハを適度な力で挟み持つことができる。 In the invention of claim 2 and claim 3, the distance between the inner edge portions of the U-shaped cross section of the transfer jig that are parallel to each other, that is, the contact between the outer periphery of the wafer and the transfer jig. Since the distance between the two points is smaller than the diameter of the wafer, specifically, 90.0 to 99.8% of the diameter of the wafer, the semiconductor wafer transfer jig faces the wafer. The wafer can be held with an appropriate force by the wedge effect by the inner edge.

請求項4の発明では、前記移し替え治具のU字形断面の内底部にウェハのオリエンテーションフラット対応するフラット面を形成したので、フラット面がウェハの回転を妨げてウェハの向きを維持できるとともに、移し替え時に向きの間違っているウェハがあったときには、向きの間違っているウェハが向きの正常なウェハよりも治具の開口部から飛び出すので、向きの間違っているウェハの発見が容易となる。 In the invention of claim 4, since the flat surface corresponding to the orientation flat of the wafer is formed at the inner bottom of the U-shaped cross section of the transfer jig, the flat surface can prevent the wafer from rotating and maintain the orientation of the wafer. When there is a wafer with the wrong orientation at the time of transfer, the wafer with the wrong orientation jumps out from the opening of the jig rather than the normal orientation wafer, so that it is easy to find the wafer with the wrong orientation.

請求項5の発明では、溝付きケースの開口部に対して半導体ウェハの移し替え治具の開口部を一致させて重ねる位置決め部を設けたので、両者を速やかに移し替え作業可能な一体状態とすることができ、また移し替え作業時に両者の開口部がずれることも防止でき、移し替え作業の効率化を図ることができる。 In the invention of claim 5, since the positioning portion for overlapping the opening portion of the semiconductor wafer transfer jig with the opening portion of the grooved case is provided, an integrated state in which both can be quickly transferred and In addition, it is possible to prevent the opening portions of the two from shifting during the transfer operation, and to improve the efficiency of the transfer operation.

本発明の半導体ウェハの移し替え治具の使用方法は、溝付きケースと半導体ウェハの移し替え治具の軸が水平な状態で両者を上下反転して移し替えが行われるので、ウェハは半径方向にわずかな距離を転動して移動するため、移動による衝撃が少なくウェハが破損しにくい。その後、半導体ウェハの移し替え治具を起こすことで移し替えられたウェハは半導体ウェハの移し替え治具の軸方向に移動し、隙間無く積層されるので、無駄な動きや衝撃が無く、ウェハの品質を保つことができる。 The method of using the semiconductor wafer transfer jig of the present invention is such that the transfer is performed by inverting both the upper and lower sides of the grooved case and the semiconductor wafer transfer jig in a horizontal state. Therefore, the wafer is less likely to break due to less impact due to movement. After that, the wafer transferred by raising the semiconductor wafer transfer jig moves in the axial direction of the semiconductor wafer transfer jig, and is stacked without any gaps. Quality can be kept.

(a)本発明の半導体ウェハの移し替え治具の斜視図である。(b)溝付きケースの斜視図である。(A) It is a perspective view of the transfer jig | tool of the semiconductor wafer of this invention. (B) It is a perspective view of a case with a groove | channel. 本発明の半導体ウェハの移し替え治具の断面図である。(a)当前記治具の側面断面図であり、(b)のB−B矢視断面図である。(b)当前記治具の正面断面図であり、(a)のA−A矢視断面図である。It is sectional drawing of the transfer jig | tool of the semiconductor wafer of this invention. (A) It is side surface sectional drawing of the said jig | tool, and is BB arrow sectional drawing of (b). (B) It is front sectional drawing of the said jig | tool, and is AA arrow sectional drawing of (a). 本発明による半導体ウェハの移し替え工程を示す側面断面図である。(a)溝付きケースに半導体ウェハの移し替え治具を被せた状態を示す。(b)溝付きケースと半導体ウェハの移し替え治具を一体として横転させた状態を示す。(c)溝付きケースと半導体ウェハの移し替え治具を上下逆にし、溝付きケース内のウェハを半導体ウェハの移し替え治具に移し替えた状態を示す。It is side surface sectional drawing which shows the transfer process of the semiconductor wafer by this invention. (A) The state where the semiconductor wafer transfer jig was put on the grooved case. (B) A state in which the grooved case and the semiconductor wafer transfer jig are integrally rolled over. (C) The state where the grooved case and the semiconductor wafer transfer jig are turned upside down, and the wafer in the grooved case is transferred to the semiconductor wafer transfer jig. 本発明の半導体ウェハの移し替え治具を起こす過程を示す正面断面図である。(a)半導体ウェハの移し替え治具を水平から45°起こした状態を示す。(b)半導体ウェハの移し替え治具を水平から85°起こした状態を示す。It is front sectional drawing which shows the process which raises the transfer jig | tool of the semiconductor wafer of this invention. (A) The state which raised the semiconductor wafer transfer jig | tool 45 degrees from horizontal is shown. (B) The state which raised the transfer jig | tool of the semiconductor wafer 85 degrees from horizontal is shown. 本発明の他の実施例を示す側面断面図である。It is side surface sectional drawing which shows the other Example of this invention. 本発明の他の実施例を示す斜視図である。It is a perspective view which shows the other Example of this invention.

半導体ウェハは単結晶インゴットをワイヤソーなどでスライスした後、研磨工程や焼鈍工程など多くの工程を経て半導体素子となる。スライスされたウェハがこれらの工程間を搬送される場合、多くは前述の溝付きケースに収められた状態で搬送され、各工程に供給されるが、ウェハを溝付きケースから一括して取り出し、積層して供給したほうが好ましい場合もある(例えば、アニール工程)。このような場合に、溝付きケースに収納されたウェハを一括して取り出す方法を検討した結果、得られたのが本発明の半導体ウェハの移し替え治具およびその使用方法である。 A semiconductor wafer becomes a semiconductor element through many processes such as a polishing process and an annealing process after a single crystal ingot is sliced with a wire saw or the like. When sliced wafers are transported between these processes, many are transported in the above-mentioned grooved case and supplied to each process. In some cases, it is preferable to supply in a stacked state (for example, an annealing step). In such a case, as a result of studying a method for collectively taking out the wafers stored in the grooved case, the semiconductor wafer transfer jig of the present invention and the method of using the same are obtained.

本発明の治具を図1及び図2によって具体的に説明する。図1(a)は本発明の半導体ウェハの移し替え治具1の斜視図であり、ウェハ2を保持した状態を示している。図1(b)は溝付きケース3の斜視図であり、ウェハ2が溝4に収納された状態を示している。また、図2(a)は前記治具1の側面断面を示し、図2(b)は同治具1の正面断面を示す。半導体ウェハの移し替え治具1は、溝付きケース3から受け取った複数のウェハ2を、一時的に立設して保持する。 The jig of the present invention will be specifically described with reference to FIGS. FIG. 1A is a perspective view of a semiconductor wafer transfer jig 1 according to the present invention, showing a state in which a wafer 2 is held. FIG. 1B is a perspective view of the grooved case 3 and shows a state in which the wafer 2 is stored in the groove 4. 2A shows a side cross-section of the jig 1, and FIG. 2B shows a front cross-section of the jig 1. The semiconductor wafer transfer jig 1 temporarily stands and holds a plurality of wafers 2 received from the grooved case 3.

半導体ウェハの移し替え治具1は、略U字形断面の半円筒形状の側面1aと、半円筒形状の軸方向に端面1bとを有し、その略U字形断面の開口部の平行に対向する内側端縁部1cでウェハ2の外周2aと2点Pで接するように、対向する内側端縁部1c間の距離(接触点Pの2点間距離)をウェハ2の直径より小さめに設定してある。もし、上記の距離がウェハ2の直径より大きい場合、ウェハ2は半導体ウェハの移し替え治具1の内底部に接触してしまい、この場合、図2に示す水平状態では、特にウェハ2の立設状態を維持しづらく、ウェハ2が倒れてしまう。そこで、本発明の開口部の対向する内側端縁部1c間の距離は、ウェハ2をその重心がある直径近くで支え、かつ、特に半導体ウェハの移し替え治具1が水平状態のときは、ウェハ2の自重が接触点Pで楔作用を生じ、ウェハ2の配列ピッチを溝を持たないにもかかわらず維持することができる寸法としている。2点Pを軸としてウェハが回転しようとすれば、半導体ウェハの移し替え治具1の端面(蓋)1b内側に接触するか、隣接するウェハ2に接触して、回転は抑制される。なお、平行に対向する内側端縁部1c間の距離は、具体的にはウェハの直径の90.0〜99.8%である。 The semiconductor wafer transfer jig 1 has a semi-cylindrical side surface 1a having a substantially U-shaped cross section and an end surface 1b in the axial direction of the semi-cylindrical shape, and is opposed to the opening of the substantially U-shaped cross section in parallel. The distance between the opposing inner edge portions 1c (the distance between the two points of contact point P) is set to be smaller than the diameter of the wafer 2 so that the inner edge portion 1c contacts the outer periphery 2a of the wafer 2 at two points P. It is. If the distance is larger than the diameter of the wafer 2, the wafer 2 comes into contact with the inner bottom portion of the semiconductor wafer transfer jig 1, and in this case, in the horizontal state shown in FIG. It is difficult to maintain the installed state, and the wafer 2 falls down. Therefore, the distance between the inner edge portions 1c facing each other of the opening of the present invention is such that the wafer 2 is supported near its center of gravity and the semiconductor wafer transfer jig 1 is in a horizontal state. The weight of the wafer 2 causes a wedge action at the contact point P, and the arrangement pitch of the wafer 2 is set to a size that can be maintained despite having no grooves. If the wafer is to be rotated about the two points P, the rotation is suppressed by contacting the inside of the end face (lid) 1b of the semiconductor wafer transfer jig 1 or contacting the adjacent wafer 2. In addition, the distance between the inner edge portions 1c facing each other in parallel is specifically 90.0 to 99.8% of the diameter of the wafer.

図3は本発明による半導体ウェハの移し替え工程を示す側面断面図である。まず、図3(a)は、複数のウェハ2を溝4に収納し、水平に置かれた溝付きケース3の開口部に、空の半導体ウェハの移し替え治具1をU字形断面の開口部を下向きとして被せ、二つを一体とした状態を示す。この一体化により、両者の内部空間は、ウェハ2の移動を許容する状態となる。図3(b)は、一体とした溝付きケース3と半導体ウェハの移し替え治具1とを右回りに90°回転させた状態を示す。このとき溝付きケース3から半導体ウェハの移し替え治具1にウェハ2が転動して移動する。図3(c)は、さらに溝付きケース3と半導体ウェハの移し替え治具1を右回りに90°回転させ、図3(a)に示す初期の状態に対し、上下逆となった状態を示す。このときウェハ2は、完全に半導体ウェハの移し替え治具1に自重を移し、空となった溝付きケース3は、取り去られる。この状態で半導体ウェハの移し替え治具1は、図1(a)及び図2に示す状態であり、ウェハ2はその外周2aの2点Pにて半導体ウェハの移し替え治具1の略U字形断面の開口部の平行に対向する内側端縁部1cと接し、自重を支持される。この後、半導体ウェハの移し替え治具1は水平状態から起こされ、ウェハ2は積層状態となる。 FIG. 3 is a side sectional view showing a semiconductor wafer transfer process according to the present invention. First, FIG. 3A shows a case where a plurality of wafers 2 are accommodated in a groove 4 and an empty semiconductor wafer transfer jig 1 is opened in a U-shaped cross section in an opening of a grooved case 3 placed horizontally. The state is shown in which the two portions are covered downward and the two are integrated. By this integration, both internal spaces are allowed to move the wafer 2. FIG. 3B shows a state in which the integrated grooved case 3 and the semiconductor wafer transfer jig 1 are rotated 90 ° clockwise. At this time, the wafer 2 rolls and moves from the grooved case 3 to the semiconductor wafer transfer jig 1. FIG. 3C shows a state in which the grooved case 3 and the semiconductor wafer transfer jig 1 are further rotated 90 degrees clockwise, and are upside down with respect to the initial state shown in FIG. Show. At this time, the wafer 2 completely transfers its own weight to the semiconductor wafer transfer jig 1, and the emptied grooved case 3 is removed. In this state, the semiconductor wafer transfer jig 1 is in the state shown in FIG. 1A and FIG. 2, and the wafer 2 is substantially U of the semiconductor wafer transfer jig 1 at two points P on the outer periphery 2a. It is in contact with the inner end edge 1c of the opening of the letter-shaped cross section that faces in parallel, and its own weight is supported. Thereafter, the semiconductor wafer transfer jig 1 is raised from a horizontal state, and the wafer 2 is in a laminated state.

図4は本発明の半導体ウェハの移し替え治具1を図2に示す状態から起こす過程を示す正面断面図である。図4(a)は、半導体ウェハの移し替え治具1を水平から45°起こした状態を示す。ウェハ2は、半導体ウェハの移し替え治具1が水平状態のときは、溝付きケース3の溝4のピッチで半導体ウェハの移し替え治具1に移され、保持されるが、これを45°起こした状態では、ウェハ2は重力の作用により、その外周2aの2点Pにて半導体ウェハの移し替え治具1の対向する内側端縁部1cと接しながら、下方に移動し、ウェハ間のピッチが狭まる。図4(b)は、さらに半導体ウェハの移し替え治具1を起こし、水平から85°とした状態を示す。この状態では、ウェハ2はその外周2aの2点Pにて半導体ウェハの移し替え治具1の略U字形断面の対向する内側端縁部1cとなお接しているものの、ウェハ2に働く重力の作用の増大にともなう接触圧力の低下による摩擦力減少で、ウェハ2はさらに下方に移動し、ウェハ間の隙間がなくなり、密着する。そして、複数枚のウェハ2は、移し替え治具1の端面1bの内面に積層した状態となる。 FIG. 4 is a front sectional view showing a process of raising the semiconductor wafer transfer jig 1 of the present invention from the state shown in FIG. FIG. 4A shows a state in which the semiconductor wafer transfer jig 1 is raised 45 degrees from the horizontal. When the semiconductor wafer transfer jig 1 is in a horizontal state, the wafer 2 is transferred to and held by the semiconductor wafer transfer jig 1 at the pitch of the grooves 4 of the grooved case 3. In the raised state, the wafer 2 moves downward while being in contact with the opposing inner edge 1c of the semiconductor wafer transfer jig 1 at two points P on the outer periphery 2a due to the action of gravity. The pitch is narrowed. FIG. 4B shows a state in which the semiconductor wafer transfer jig 1 is further raised to 85 ° from the horizontal. In this state, the wafer 2 is still in contact with the opposed inner edge 1c of the substantially U-shaped cross section of the semiconductor wafer transfer jig 1 at two points P on the outer periphery 2a, but the gravity acting on the wafer 2 is reduced. Due to the reduction of the frictional force due to the decrease in the contact pressure accompanying the increase in the action, the wafer 2 moves further downward, and there is no gap between the wafers, and the wafer 2 comes into close contact. The plurality of wafers 2 are stacked on the inner surface of the end surface 1b of the transfer jig 1.

半導体ウェハの移し替え治具1が水平の状態では、ウェハ2は一定ピッチを維持して安定して保持されるので、ウェハ間に隙間が多く、ウェハ2を半導体ウェハの移し替え治具1から1枚づつ取り出す作業も、従来技術のごとくウェハ2が溝付きケースの溝に入った状態よりは容易であるものの、十分とはいえない。そこで、半導体ウェハの移し替え治具1を起こすことにより、ウェハ2と半導体ウェハの移し替え治具1との接触点Pにおける摩擦力を低減し、ウェハ2をゆるやかに落下させることによって、ウェハ同士を積層することとした。以下に、本発明の一実施例を説明するが、本発明の範囲が実施例によって限定されるものではない。 When the semiconductor wafer transfer jig 1 is in a horizontal state, the wafer 2 is stably held at a constant pitch, so that there are many gaps between the wafers, and the wafer 2 is removed from the semiconductor wafer transfer jig 1. Although the operation of taking out one by one is easier than the state in which the wafer 2 is in the groove of the grooved case as in the prior art, it is not sufficient. Therefore, by raising the semiconductor wafer transfer jig 1, the frictional force at the contact point P between the wafer 2 and the semiconductor wafer transfer jig 1 is reduced, and the wafers 2 are gently dropped, so Were laminated. Examples of the present invention will be described below, but the scope of the present invention is not limited by the examples.

本発明の一実施例として、溝付きケース(寸法:奥行142mm、幅94mm、高さ83mm、溝ピッチ4.8mm)に収納されたウェハ(寸法:直径76.2mm、厚さ0.5mm)25枚を本発明の半導体ウェハの移し替え治具1としての半筒状の移し替え治具(外形寸法:奥行100mm、幅87mm、高さ45mm、収納部寸法:奥行90mm、幅(対向する内側端縁部1c間の距離)76mm、深さ39mm、材質:硬質塩化ビニル製)へ移し替えた。 As an embodiment of the present invention, a wafer (dimensions: diameter 76.2 mm, thickness 0.5 mm) 25 contained in a grooved case (dimensions: depth 142 mm, width 94 mm, height 83 mm, groove pitch 4.8 mm) 25 A semi-cylindrical transfer jig (outer dimensions: depth 100 mm, width 87 mm, height 45 mm, storage dimensions: depth 90 mm, width (opposite inner ends) as a semiconductor wafer transfer jig 1 of the present invention The distance between the edges 1c) was 76 mm, the depth was 39 mm, and the material was made of hard vinyl chloride.

1ケースにつきウェハ25枚入りの溝付きケース4つからウェハを別のケースへ移し替える作業において、従来のハンドリングにて移し替えを行なう場合は、移し替えに1ケースで35秒、空のケースを移動し新たなケースの準備に5秒を費やしており、これを4回繰り返すと35秒+5秒+35秒+5秒+35秒+5秒+35秒=155秒の作業時間がかかっていた。これを本発明としての半筒状の移し替え治具を用いて行なうと、溝付きケースから半筒状の移し替え治具への移し替えに7秒、空のケースを移動し新たなケース準備に5秒を費やし、これを4回繰り返すと、7秒+5秒+7秒+5秒+7秒+5秒+7秒=43秒となり、従来の方法より1/3以下の時間にて作業を終えることができた。また、半筒状の移し替え治具によるウェハの保持も良好であった。なお、半筒状の移し替え治具の材質は、本実施例で用いたある程度の弾性をもつ樹脂等の他、金属で作製してもよい。以上の結果を表1に示す。 When transferring wafers from four grooved cases with 25 wafers per case to another case, using conventional handling, 35 seconds are required for each case. It took 5 seconds to move and prepare a new case, and when this was repeated 4 times, it took 35 seconds + 5 seconds + 35 seconds + 5 seconds + 35 seconds + 5 seconds + 35 seconds = 155 seconds. When this is performed using the semi-cylindrical transfer jig according to the present invention, the empty case is moved for 7 seconds to transfer from the grooved case to the semi-cylindrical transfer jig, and a new case is prepared. If you spend 5 seconds and repeat this 4 times, 7 seconds + 5 seconds + 7 seconds + 5 seconds + 7 seconds + 5 seconds + 7 seconds = 43 seconds. I was able to. Also, the wafer was held well by the semi-cylindrical transfer jig. The material of the semi-cylindrical transfer jig may be made of a metal other than a resin having a certain degree of elasticity used in this embodiment. The results are shown in Table 1.

Figure 2012222117
Figure 2012222117

本発明の別の実施態様として、溝付きケースから本発明の治具へウェハが移動する際、ウェハの移動距離をほぼゼロに近くにすることも可能である。具体的には、図5(a)に示すごとく、本発明の治具1の断面形状を扇型とし、ウェハの収納部の深さを浅くしたものを用いる。この扇型状の半導体ウェハの移し替え治具1を用いれば、移し替え治具1を溝付きケース3に被せたときに、溝付きケース3に入っているウェハ2の外周2aと移し替え治具1の内側端縁部1cとを密着寸前の状態とすることができ、移し替え治具1と溝付きケース3とを上下反転した際に、ウェハ2の移動距離をほぼゼロで移し替えが可能である。 As another embodiment of the present invention, when the wafer moves from the grooved case to the jig of the present invention, the moving distance of the wafer can be made almost zero. Specifically, as shown in FIG. 5A, the jig 1 of the present invention has a fan-shaped cross-sectional shape and a shallow wafer storage portion is used. If this fan-shaped semiconductor wafer transfer jig 1 is used, when the transfer jig 1 is placed on the grooved case 3, it is transferred to the outer periphery 2a of the wafer 2 contained in the grooved case 3. The inner edge 1c of the tool 1 can be brought into a state of close contact, and when the transfer jig 1 and the grooved case 3 are turned upside down, the movement distance of the wafer 2 can be transferred with almost zero. Is possible.

図5(b)は、半導体ウェハの移し替え治具1のU字形断面の内底部にウェハ2のオリエンテーションフラット5に対応するフラット板6を設けた例を示している。このように、移し替え治具1の底部にフラット面を形成すれば、フラット面がウェハの回転を妨げてウェハの向きを維持できるとともに、移し替え時に向きの間違っているウェハがあったときには、向きの間違っているウェハが向きの正常なウェハよりも治具の開口部から飛び出すので、向きの間違っているウェハの発見が容易となる。なお、オリエンテーションフラットとは、ウェハの結晶方位を判別するための切欠きである。 FIG. 5B shows an example in which a flat plate 6 corresponding to the orientation flat 5 of the wafer 2 is provided on the inner bottom of the U-shaped cross section of the semiconductor wafer transfer jig 1. In this way, if a flat surface is formed at the bottom of the transfer jig 1, the flat surface can prevent the wafer from rotating and maintain the orientation of the wafer. Since a wafer with an incorrect orientation protrudes from the opening of the jig as compared with a normal orientation wafer, it is easy to find a wafer with an incorrect orientation. The orientation flat is a notch for determining the crystal orientation of the wafer.

図6(a)及び図6(b)に示す例は、溝付きケース3の開口部に対して半導体ウェハの移し替え治具1の開口部を一致させて重ねるための位置決め部7を半導体ウェハの移し替え治具1の開口部に設けるとともに、転がり防止用の平面部8を半導体ウェハの移し替え治具1の側面1aに設けたものである。位置決め部7を溝付きケース3に形成されている位置決め溝9に嵌め込むことにより、溝付きケース3と前記移し替え治具1とは、ウェハ2が溝付きケース3の溝4から前記移し替え治具1の内部へ移動し得る状態で位置決めされ、一体化される。この例では、半導体ウェハの移し替え治具1の位置決め部7は、溝付きケース3に形成されている位置決め溝9に嵌め込まれるが、一方を位置決めピン、他方を位置決め穴としてもよい。また、半導体ウェハの移し替え治具1又は溝付きケース3の一方を他方にインロー式で嵌め込むものであってもよい。 In the example shown in FIG. 6A and FIG. 6B, the positioning portion 7 for overlapping the opening portion of the semiconductor wafer transfer jig 1 with the opening portion of the grooved case 3 is overlapped with the semiconductor wafer. Are provided at the opening of the transfer jig 1, and a flat portion 8 for preventing rolling is provided on the side surface 1a of the transfer jig 1 of the semiconductor wafer. By fitting the positioning portion 7 into the positioning groove 9 formed in the grooved case 3, the grooved case 3 and the transfer jig 1 allow the wafer 2 to be transferred from the groove 4 of the grooved case 3. It is positioned and integrated so that it can move into the jig 1. In this example, the positioning portion 7 of the semiconductor wafer transfer jig 1 is fitted into the positioning groove 9 formed in the grooved case 3, but one may be a positioning pin and the other may be a positioning hole. Alternatively, one of the semiconductor wafer transfer jig 1 and the grooved case 3 may be fitted into the other in an inlay manner.

以上で説明した実施例では、半導体ウェハの移し替え治具1は、略U字形断面を有しているが、断面形状は、一部が開口し、開口部の対向する内側端縁部によってウェハ2をその重心がある直径近くの2点で挟んで保持しうる形状であればよい。例えば、断面形状を一辺が開口した矩形や台形とし、その開口部の平行に対向する内側端縁部によってウェハ2をその直径近くの2点で挟んで保持するものとしてもよい。 In the embodiment described above, the semiconductor wafer transfer jig 1 has a substantially U-shaped cross section, but the cross sectional shape is partially opened, and the wafer is formed by the inner edge portions facing the opening. Any shape can be used as long as 2 can be held between two points near the diameter of the center of gravity. For example, the cross-sectional shape may be a rectangle or trapezoid with one side open, and the wafer 2 may be held between two points near the diameter by the inner edge portions facing the opening in parallel.

1 半導体ウェハの移し替え治具
1a 側面
1b 端面
1c 内側端縁部
2 ウェハ
2a 外周
3 溝付きケース
4 溝
5 オリエンテーションフラット
6 フラット板
7 位置決め部
8 平面部
9 位置決め溝
DESCRIPTION OF SYMBOLS 1 Semiconductor wafer transfer jig 1a Side surface 1b End surface 1c Inner edge 2 Wafer 2a Outer periphery 3 Grooved case 4 Groove 5 Orientation flat 6 Flat plate 7 Positioning portion 8 Planar portion 9 Positioning groove 9

Claims (6)

ウェハを溝付きケースから移し替える治具であって、一部が開口する略U字形断面の半円筒形状の側面と、半円筒形状の軸方向に端面とを有し、ウェハの外周に対し、U字形断面の開口部の平行に対向する内側端縁部で接触することを特徴とする半導体ウェハの移し替え治具。 A jig for transferring a wafer from a grooved case, having a semi-cylindrical side surface with a substantially U-shaped cross-section that is partially open, and an end surface in the axial direction of the semi-cylindrical shape, A transfer jig for a semiconductor wafer, which is in contact with an inner edge of the U-shaped cross section facing each other in parallel. 前記対向する内側端縁部間の距離は、ウェハの直径よりも小さいことを特徴とする請求項1に記載の半導体ウェハの移し替え治具。 2. The semiconductor wafer transfer jig according to claim 1, wherein a distance between the opposed inner edge portions is smaller than a diameter of the wafer. 前記対向する内側端縁部間の距離は、ウェハの直径の90.0〜99.8%であることを特徴とする請求項2に記載の半導体ウェハの移し替え治具。 3. The semiconductor wafer transfer jig according to claim 2, wherein the distance between the opposed inner end edges is 90.0 to 99.8% of the diameter of the wafer. 前記U字形断面の内底部にウェハのオリエンテーションフラットに対応するフラット面を形成したことを特徴とする請求項1、請求項2又は請求項3に記載の半導体ウェハの移し替え治具。 4. The semiconductor wafer transfer jig according to claim 1, wherein a flat surface corresponding to an orientation flat of the wafer is formed on an inner bottom portion of the U-shaped cross section. 5. 溝付きケースの開口部に対して半導体ウェハの移し替え治具の開口部を一致させて重ねる位置決め部を開口部に有することを特徴とする請求項1、請求項2、請求項3又は請求項4に記載の半導体ウェハの移し替え治具。 The opening portion has a positioning portion that overlaps the opening portion of the semiconductor wafer transfer jig so as to coincide with the opening portion of the grooved case. 4. A semiconductor wafer transfer jig according to 4. 請求項1、請求項2、請求項3、請求項4又は請求項5に記載の半導体ウェハの移し替え治具の使用方法であって、ウェハを複数枚収納して水平に載置された溝付きケースに、前記半導体ウェハの移し替え治具のU字形断面の開口部を下にして、半導体ウェハの移し替え治具を溝付きケースに重ね、両者を上下反転して複数枚のウェハを溝付きケースから半導体ウェハの移し替え治具に移し替え、ウェハをU字形断面の開口部の平行に対向する内側端縁部で保持した後、半導体ウェハの移し替え治具を起こして前記治具内部に保持した複数枚のウェハを隙間無く積層させ、積層した状態のウェハからウェハを1枚ごとあるいは積層状態のままで任意の枚数ごと取り出すことを特徴とする半導体ウェハの移し替え治具の使用方法。 6. A method of using a semiconductor wafer transfer jig according to claim 1, claim 2, claim 3, claim 4 or claim 5, wherein a plurality of wafers are stored and placed horizontally. Place the semiconductor wafer transfer jig on the grooved case with the U-shaped cross-sectional opening of the semiconductor wafer transfer jig facing down, and turn the two upside down to groove the wafers. The wafer is transferred from the attached case to a semiconductor wafer transfer jig, and the wafer is held by the inner edge of the U-shaped cross section facing the parallel inner edge, and then the semiconductor wafer transfer jig is raised to raise the inside of the jig. A method of using a semiconductor wafer transfer jig, comprising: laminating a plurality of wafers held on the wafer without gaps, and taking out the wafers from the laminated wafers one by one or any number of wafers in a laminated state .
JP2011085739A 2011-04-07 2011-04-07 Translocation jig of semiconductor wafer Withdrawn JP2012222117A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115078484A (en) * 2022-07-28 2022-09-20 中国科学技术大学 Reagent electrochemical testing device and method convenient for realizing automation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115078484A (en) * 2022-07-28 2022-09-20 中国科学技术大学 Reagent electrochemical testing device and method convenient for realizing automation

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