JP2012212774A - Method for evaluating substrate displacement in charged particle beam lithography device, and charged particle beam lithography system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for evaluating substrate displacement in a charged particle beam lithography device, enabling easy analysis of substance displacement.SOLUTION: In a method for evaluating substrate displacement in a charged particle beam lithography device according to an embodiment, a substrate for evaluation having a triaxial accelerometer is prepared. The substrate for evaluation is mounted on a stage movable in an X-direction and a Y-direction that are orthogonal to each other on a horizontal plane, and then the stage is moved. An acceleration applied to the substrate for evaluation is measured using the triaxial accelerometer. The positions of the stage in the X-direction and the Y-direction are measured using a laser interferometer. From the position measurement result, the acceleration applied to the stage is calculated. Further, the acceleration applied to the substrate for evaluation and the acceleration applied to the stage are analyzed, and the substrate displacement, which is displacement of relative positions of the stage and the substrate, is evaluated.

Description

  The present invention relates to a substrate deviation evaluation method for a charged particle beam drawing apparatus and a charged particle beam drawing system.

  A so-called lithography technique for transferring a photomask pattern onto a wafer is used to form a circuit pattern of a semiconductor product. In the manufacture of a photomask, a pattern is formed by irradiating an electron beam onto a mask substrate using an electron beam drawing apparatus. High positional accuracy is required for the photomask pattern. However, there has been a problem of pattern deviation in which a drawn pattern is drawn at a position different from a predetermined position during drawing.

  Various factors such as drift of an electron beam and thermal expansion of a mask substrate can be considered as a cause of pattern deviation. Japanese Patent Application Laid-Open No. 2004-228561 describes a method of drawing while correcting a drawing position in accordance with the detected position deviation amount by detecting a position deviation of a mask substrate during the drawing.

JP 2000-252191 A

  As one of the factors that cause the pattern deviation, a so-called substrate deviation in which the mask substrate placed on the stage and the stage are relatively displaced during drawing can be considered. An evaluation method for the substrate deviation is important for investigating the cause when pattern deviation occurs during drawing or for maintaining the apparatus so as not to cause pattern deviation.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a charged particle beam drawing system and a charged particle beam drawing system for a charged particle beam drawing apparatus that facilitate the analysis of the substrate deviation. It is in.

  According to one aspect of the present invention, there is provided a substrate displacement evaluation method for a charged particle beam drawing apparatus, in which an evaluation substrate including a three-axis acceleration sensor is prepared and the evaluation substrate is movable in horizontal X and Y directions perpendicular to each other. , The stage is moved, the acceleration applied to the evaluation substrate is measured using a triaxial acceleration sensor, the X-direction position and the Y-direction position of the stage are measured using a laser interferometer, The acceleration applied to the stage is calculated from the measurement result of the position, and the substrate displacement is evaluated by analyzing the acceleration applied to the evaluation substrate and the acceleration applied to the stage.

  In the substrate misalignment evaluation method of the above aspect, the evaluation substrate has a storage unit that stores data of acceleration measured by the triaxial acceleration sensor, a triaxial acceleration sensor, and a control unit that controls the storage unit, and a triaxial acceleration sensor It is desirable that a battery serving as a power source for the storage unit and the control unit is provided.

  In the substrate displacement evaluation method of the above aspect, it is desirable to perform measurement using a triaxial acceleration sensor and measurement using a laser interferometer while the chamber in which the stage is accommodated is in a vacuum state.

  In the substrate displacement evaluation method of the above aspect, the stage tilt is measured using a laser interferometer, the stage yawing, rolling, and pitching are calculated from the tilt measurement results, and the acceleration applied to the evaluation substrate and the stage applied In addition to the acceleration to be performed, it is desirable to analyze the yawing, rolling, and pitching of the stage to evaluate the substrate displacement, which is the displacement of the relative position between the stage and the substrate.

  A charged particle beam drawing system of one embodiment of the present invention is a laser interference that measures a position of a stage on which a substrate can be placed and is movable in horizontal X and Y directions orthogonal to each other, and the stage in the X and Y directions. A charged particle beam drawing apparatus having a beam irradiation means for irradiating a substrate on the stage with a charged particle beam, and a stage, a three-axis acceleration sensor, and a displacement of the relative position between the stage and the substrate And an evaluation substrate for evaluating substrate misalignment.

  ADVANTAGE OF THE INVENTION According to this invention, the board | substrate deviation evaluation method and charged particle beam drawing system of the charged particle beam drawing apparatus which make the analysis of a board | substrate deviation easy are provided.

It is a flowchart of the board | substrate deviation evaluation method of the charged particle beam drawing apparatus of embodiment. It is a block diagram of the charged particle beam drawing apparatus system of embodiment. It is a schematic diagram of the board | substrate for evaluation of embodiment. It is a schematic diagram of the state which mounted the board | substrate for evaluation of embodiment on the stage. It is explanatory drawing of the board | substrate deviation evaluation method of embodiment.

  Embodiments of the present invention will be described below with reference to the drawings.

  In the present specification, “substrate misalignment” means a phenomenon in which the relative position between the stage and a substrate such as a mask substrate placed on the stage shifts. It is assumed that the “substrate misalignment” includes a vibration phenomenon in which the relative position is once shifted and then restored to the original position.

  According to an embodiment of the present invention, there is provided an evaluation substrate including a triaxial accelerometer, and the evaluation substrate is mounted on a stage movable in horizontal X and Y directions perpendicular to each other. And move the stage. Then, the acceleration applied to the evaluation substrate is measured using a three-axis accelerometer, the X-direction position and the Y-direction position of the stage are measured using a laser interferometer, and the position measurement result is applied to the stage. Calculate the acceleration. Further, the acceleration applied to the evaluation substrate and the acceleration applied to the stage are analyzed, and the substrate displacement, which is the displacement of the relative position between the stage and the substrate, is evaluated.

  With the above configuration, according to the substrate displacement evaluation method of the charged particle beam drawing apparatus of the embodiment, the substrate displacement can be easily analyzed.

  FIG. 2 is a configuration diagram of the charged particle beam drawing apparatus system according to the embodiment.

  A charged particle beam drawing system according to an embodiment includes a stage on which a substrate can be placed and is movable in horizontal X and Y directions orthogonal to each other, a laser interferometer that measures positions of the stage in the X and Y directions, A charged particle beam writing apparatus including beam irradiation means for irradiating a substrate on the stage with a charged particle beam is provided. In addition, the apparatus includes a three-axis accelerometer that can be placed on a stage, and an evaluation substrate that evaluates a substrate displacement that is a displacement of a relative position between the stage and the substrate. Here, an electron beam drawing apparatus will be described as an example of a charged particle beam drawing apparatus.

  The charged particle beam drawing system includes a stage acceleration calculation unit that calculates acceleration applied to the stage from the measurement result of the position of the laser interferometer, and an evaluation substrate acceleration calculation unit that calculates and processes the acceleration measurement result of the evaluation substrate. It is desirable to further include

  The charged particle beam drawing apparatus system includes an electron beam drawing apparatus 100 and an evaluation substrate 200. The electron beam drawing apparatus 100 includes a drawing unit 102 and a control unit 104 that controls the drawing operation of the drawing unit 102. The electron beam drawing apparatus 100 draws a predetermined pattern on the sample 110.

  A stage 112 on which a sample 110 is placed is accommodated in a sample chamber (chamber) 108 of the drawing unit 102. The stage 112 can be moved by the control unit 104 in the horizontal X direction (left and right direction on the paper surface) and the Y direction (front and back direction on the paper surface) orthogonal to each other. It is also driven in the Z direction (up and down direction on the paper). An example of the sample (substrate) 110 is a mask substrate for transferring a pattern to a wafer on which a semiconductor device is formed. The mask substrate also includes, for example, mask blanks on which no pattern is formed.

  In the mask blank, for example, chromium serving as a light shielding film is coated on quartz glass. When placed on the stage 112 of the electron beam drawing apparatus, for example, a resist is applied.

  The electron beam drawing apparatus 100 includes an X position measuring laser interferometer (not shown) for measuring the position of the stage 112 in the X direction and a Y position measuring laser interference for measuring the position in the Y direction. A meter (not shown) is provided.

  Above the sample chamber 108, an electron beam optical system 114 is installed as a beam irradiation means. The electron beam optical system 114 includes an electron gun 116, various lenses 118, 120, 122, 124, 126, a blanking deflector 128, a beam size variable deflector 130, a beam scanning sub deflector 132, and a beam scanning. The main deflector 134, and a first aperture 136 and a second aperture 138 for beam shaping for drawing with a variable shaped beam.

  The control unit 104 includes a layout data storage unit 106, a data processing unit 140, and a control circuit 150.

  The layout data storage unit 106 has a function of receiving layout data, which is basic data of a pattern to be drawn, and storing the layout data. In the layout data, a plurality of figures are defined in the drawing area. The layout data is, for example, a circuit pattern of a semiconductor integrated circuit. The layout data storage unit 106 may be a storage medium, and for example, a magnetic disk or the like can be used.

  The data processing unit 140 has a function of converting layout data into shot data that is internal control format data unique to the electron beam drawing apparatus 100.

  The control circuit 150 has a function of controlling the drawing unit 102 based on the shot data generated by the data processing unit 140.

  The drawing unit 102 has a function of drawing by sequentially irradiating the sample 110 with an electron beam using shot data.

  Processing of each function of the data processing unit 140 and the control circuit 150 is performed using, for example, an arithmetic processing device such as a CPU or hardware such as an electric circuit. Alternatively, a combination of software and hardware may be used.

  In FIG. 2, description of the embodiment is omitted except for necessary components. Needless to say, the electron beam lithography apparatus 100 may normally include other necessary configurations.

  FIG. 3 is a schematic diagram of the evaluation substrate of the embodiment. 3A is a top view, and FIG. 3B is an AA cross-sectional view of FIG. 3A.

  The evaluation substrate 200 is designed so that it can be placed on the stage 112 of the electron beam drawing apparatus 100. In other words, it has the same outer dimensions as the sample 110 applied to the electron beam drawing apparatus 100. For example, when the electron beam drawing apparatus 100 is designed for drawing a 6025 mask, the evaluation substrate 200 has the same outer dimensions as the 6025 mask. The 6025 mask is a standard mask whose outer dimensions are 6 inches (one side) × 6 inches (one side) × 0.25 inches (thickness).

  Further, the evaluation substrate 200 preferably has the same weight as the sample 110 applied to the electron beam drawing apparatus 100. This is because when evaluating the substrate displacement, the evaluation can be performed in a state closer to the actual drawing. From the same viewpoint, it is desirable that the part where the evaluation substrate 200 is in contact with the support part of the sample placed on the stage 112 is formed of the same material as the part where the sample 100 is in contact with the support part.

  The evaluation substrate 200 includes an outer frame 202 made of quartz glass and a circuit unit 204 that is housed in the outer frame 202. When the sample is a mask substrate, the portion in contact with the support portion of the stage 112 is quartz glass. Therefore, in the evaluation substrate 200, the outer frame 202 that is in contact with the support portion of the stage 112 is preferably formed of quartz glass. .

  In the circuit unit 204, a three-axis acceleration sensor 208, a storage unit 210, and a control unit 212 are mounted on a circuit board 206. Further, the evaluation substrate 200 incorporates batteries 214 a and 214 b that serve as power sources for the three-axis acceleration sensor 208, the storage unit 210, and the control unit 212.

  The triaxial acceleration sensor 208 measures the acceleration applied to the evaluation substrate 200. As the three-axis acceleration sensor 208, for example, a capacitance type acceleration sensor of MEMS (Micro Electro Mechanical Systems), a ceramic piezoelectric element type acceleration sensor, or the like is used. From the viewpoint of driving the triaxial acceleration sensor 208 with the batteries 214a and 214b built in the evaluation substrate 200, it is desirable to use a MEMS capacitive acceleration sensor with low power consumption.

  The triaxial acceleration sensor 208 is mounted on the circuit board 206 so that when the evaluation substrate 200 is placed on the stage 112, the acceleration in the X direction, Y direction, and Z direction of the stage movement can be monitored.

  The storage unit 210 stores acceleration data of the evaluation substrate 200 measured by the three-axis acceleration sensor 208 and the like. The storage unit 210 is a semiconductor memory such as an SRAM or a flash memory, for example.

  The control unit 212 controls the triaxial acceleration sensor 208, the storage unit 210, and the like. The control unit 212 is, for example, an MPU (Micro Processing Unit).

  On the circuit board 206, a circuit board 206 and a circuit board cover 216 for protecting elements mounted on the circuit board 206 are provided.

  Note that it is desirable to separately store the batteries 214a and 214b in a case sealed with an O-ring or the like so as to maintain atmospheric pressure so that liquid leakage does not occur even in an evaluation in a vacuum state.

  In the embodiment, the evaluation substrate 200 has the same outer dimensions and weight as the sample 110 applied to the electron beam drawing apparatus 100. In addition, a storage unit 210 and power supply batteries 214a and 214b are incorporated. Further, the portion that contacts the support portion of the stage 112 is also formed of the same material as the mask substrate for actual drawing. Therefore, it is possible to evaluate the substrate displacement in the same environment as in actual drawing, which facilitates the evaluation and improves the accuracy of the evaluation and analysis.

  FIG. 1 is a flowchart of a substrate displacement evaluation method for a charged particle beam drawing apparatus according to an embodiment. FIG. 4 is a schematic view of a state in which the evaluation substrate is placed on the stage. 4 (a) is a top view, FIG. 4 (b) is a side view in the direction of white arrow A in FIG. 4 (a), and FIG. 4 (c) is a side view in the direction of white arrow B in FIG. 4 (a). . Hereinafter, the substrate displacement evaluation method of the embodiment will be described with reference to FIGS.

  First, the evaluation substrate 200 including the triaxial acceleration sensor 208 is prepared (S10).

  Next, the evaluation substrate 200 is placed on the stage 112 that is movable in the horizontal X and Y directions perpendicular to each other (S11). As shown in FIG. 4, the evaluation substrate 200 is placed on three support pins 302 a, 302 b, 302 c provided on the stage 112. At this time, the three support pins 302 a, 302 b, and 302 c are in contact with the outer frame 202 of quartz glass of the evaluation substrate 200.

  In the electron beam drawing apparatus 100 according to the present embodiment, since the support portion of the substrate is point-supported, stress applied to the substrate from the support portion is minimized, and distortion of the substrate can be effectively suppressed.

  In the case of the electron beam drawing apparatus 100 according to the present embodiment, the substrate displacement occurs, for example, when the support pins 302a, 302b, and 302c and the substrate are displaced at the contact portions between the support pins 302a, 302b, and 302c and the substrate.

  Next, the movement of the stage 112 is started (S12). The stage 112 is moved in the same manner as when drawing on an actual mask substrate. At this time, it is desirable to keep the sample chamber (chamber) 108 in which the stage 112 is accommodated in a vacuum state as in the actual mask drawing. For example, the amount of moisture in the atmosphere may be different between vacuum and atmospheric pressure. For this reason, by setting the vacuum state, the friction coefficient between the support pins 302a, 302b, and 302c and the evaluation substrate 200 can be made the same as in actual drawing, and the substrate displacement with higher accuracy can be achieved. This is because evaluation is possible.

  Then, with the stage 112 being moved, the accelerations in the X direction, the Y direction, and the Z direction applied to the evaluation substrate 200 are measured for each time using the triaxial acceleration sensor 208 (S13). The measurement result is A / D converted, for example, and stored in the storage unit 210.

  Here, the A / D converted measurement result may be stored in the storage unit 210 after being averaged for a certain time by the calculation function of the control unit 212. By averaging, the amount of data is reduced, and the memory capacity to be used can be reduced.

  The A / D converted measurement result may be subjected to FFT (Fast Fourier Transform) processing by the calculation function of the control unit 212 and stored in the storage unit 210. Note that data processing such as FFT processing on the measurement result may be executed in the evaluation substrate 200 or may be executed separately by the control unit 104 of the electron beam lithography apparatus 100 or a computer outside the apparatus after the measurement is completed. I do not care. That is, even if the evaluation substrate acceleration calculation unit for calculating and processing the acceleration measurement result of the evaluation substrate 200 is provided in the evaluation substrate 200, the control unit 104 of the electron beam drawing apparatus 100, a computer outside the apparatus, etc. It does not matter.

  Simultaneously with the measurement using the triaxial acceleration sensor 208, the position in the X direction and the Y direction of the stage 112 are measured for each time using a laser interferometer (S14). As shown in FIG. 4, the electron beam lithography apparatus 100 includes an X position measuring laser interferometer 304 and a Y position measuring laser interferometer 306 as means for measuring the position of the stage 112 in the X direction and the Y direction. , An X position measuring mirror 308 and a Y position measuring mirror 310.

  The position of the stage 112 in the X direction is measured using an X position measuring laser interferometer 304 and an X position measuring mirror 308. The position of the stage 112 in the Y direction is measured using a Y position measuring laser interferometer 306 and a Y position measuring mirror 310.

  At this time, as shown in FIGS. 4B and 4C, the X position measuring laser interferometer 304 has three X position measuring laser interferometers, one at the top and two at the bottom. 304a, 304b, and 304c are used (similarly, the Y-position measuring laser interferometers 306a, 306b, and 306c (not shown) are used for the Y-position measuring laser interferometer 306), thereby tilting the stage 112. It is desirable to measure every hour. From this measurement result, yawing, rolling, and pitching of the stage 112 can be calculated. Considering this result as well, more accurate evaluation and analysis can be performed by evaluating the substrate displacement in a later step.

  Note that yawing is a movement in which the stage 112 rotates in the XY plane, that is, a movement in which the stage 112 is inclined in the XY plane with respect to the traveling direction. Rolling is a movement in which the stage 112 rotates about the traveling direction of the stage 112, that is, a movement in which the stage 112 is inclined with respect to the XY plane with respect to a direction perpendicular to the traveling direction. Pitching is a movement in which the stage 112 rotates about the direction perpendicular to the traveling direction of the stage 112, that is, a movement in which the stage 112 is inclined with respect to the XY plane with respect to the traveling direction.

  For example, when the stage 112 is moving in the Y direction, the yawing of the stage 112 can be calculated using the measurement results of the lower X-position measuring laser interferometers 304b and 304c. Further, for example, when the stage 112 is moving in the Y direction, the rolling of the stage 112 is based on the measurement results of the upper Y position measuring laser interferometer 306a and the lower Y position measuring laser interferometers 306b and 306c. Can be used to calculate. For example, when the stage 112 is moving in the Y direction, the pitching of the stage 112 is obtained by measuring the measurement results of the upper X position measuring laser interferometer 304a and the lower X position measuring laser interferometers 304b and 304c. Can be used to calculate.

  Then, the movement of the stage 112 is finished (S15).

  Then, the acceleration applied to the stage 112 is calculated from the measurement result of the position of the stage 112 in S14 (S16). The acceleration applied to the stage 112 is calculated by, for example, second-order differentiation of the measured position data of the stage 112. The calculation of the acceleration is executed by the control unit 104 of the electron beam drawing apparatus 100, a computer outside the apparatus, or the like. Further, the control unit 104 of the electron beam drawing apparatus 100 may be used simultaneously with the stage movement. That is, even if the stage acceleration calculation unit for calculating the acceleration applied to the stage 112 from the measurement results of the positions of the laser interferometers 304 and 306 is provided in the evaluation substrate 200, the control of the electron beam lithography apparatus 100 is separately performed. It may be the unit 104 or a computer outside the apparatus.

  Next, the acceleration applied to the evaluation substrate 200 and the acceleration applied to the stage 112 are analyzed, and the substrate displacement is evaluated (S17). At this time, as described above, the yawing, rolling, and pitching of the stage 112 are calculated from the measurement result of the inclination of the stage 112, and in addition to the acceleration applied to the evaluation substrate 200 and the acceleration applied to the stage 112, the stage It is desirable to analyze the yawing, rolling, and pitching of 112 to evaluate the substrate displacement. This is because, by taking into account yawing, rolling, and pitching of the stage 112, the cause analysis of the substrate deviation can be performed in more detail, and the accuracy of evaluation and analysis is improved.

  FIG. 5 is an explanatory diagram of a substrate deviation evaluation method according to the embodiment. The horizontal axis is time, the vertical axis is the acceleration in the X direction (Xmask), Y direction (Ymask), and Z direction (Zmask) of the evaluation substrate, and the X direction (Xstage) and Y direction (Ystage) of the stage. Each acceleration.

  FIG. 5 is a diagram showing a measurement result when the stage is controlled by constant velocity motion. For example, it is assumed that pattern deviation occurs when drawing on a mask substrate. Then, it is assumed that substrate displacement is considered as a factor of pattern displacement.

  In such a case, it is assumed that a measurement result as shown in FIG. 5 is obtained. At time Ta, application of acceleration is recognized in Xmask and Xstage. In such a case, it is first confirmed whether the acceleration applied to Xmask and Xstage is within the range of the assumed acceleration in normal stage movement. If it is out of the range of the assumed acceleration, there is a possibility that the substrate is displaced at time Ta.

  If the acceleration applied to Xmask and Xstage is within the expected acceleration range in normal stage movement, attention is paid to Zmask, that is, the acceleration applied in the Z direction of the evaluation substrate 200. . At time Ta, no acceleration is applied to Zmask. In such a case, it is presumed that the probability that the substrate misalignment is low is low because no force is generated in the direction in which the evaluation substrate 200 is lifted from the support pins 302a, 302b, and 302c.

  Further, at time Tc, acceleration is applied to Ymask and Ystage. Then, Zmask, that is, no acceleration is applied in the Z direction of the evaluation substrate. Therefore, also in this case, when the acceleration applied to Ymask and Ystage is within the range of the expected acceleration in the normal stage movement, it is presumed that the probability of occurrence of substrate displacement is low.

On the other hand, at time Tb, application of acceleration is recognized in Ymask and Ystage. At the same time, acceleration is also applied to the Zmask, that is, the Z direction of the evaluation substrate. Therefore, a force in the direction in which the evaluation substrate 200 is lifted with respect to the support pins 302a, 302b, and 302c is applied. In such a case, even if the acceleration applied to Ymask and Ystage is within the expected acceleration range in the normal stage movement,
The frictional force between the evaluation substrate 200 and the support pins 302a, 302b, and 302c is reduced, and there is a high possibility that substrate displacement will occur. It can be inferred that the resulting substrate displacement is related to the movement of the stage in the Y direction (Ystage).

  The application of acceleration to the stage such as time Ta, time Tb, and time Tc is considered to be caused by, for example, discontinuity of stage movement due to oil accumulation in the rail portion of the stage.

  At time Td, no acceleration is applied to Xmask, Ymask, Xstage, and Ystage. However, acceleration is also applied to Zmask, that is, the Z direction of the evaluation substrate. Therefore, although there is a high possibility that the substrate shift occurs, the relationship between the substrate shift generated here and the stage movement is unclear.

  In this case, for example, by analyzing the yawing, rolling, and pitching of the stage 112 described above and evaluating the substrate displacement, it is possible to further evaluate the cause of the substrate displacement. That is, by confirming that there is no abnormality in yawing, rolling, and pitching at time Td, it is possible to further evaluate and analyze the cause of the substrate displacement that occurs.

  As described above, according to the embodiment, the charged particle beam drawing apparatus that facilitates the analysis of the substrate displacement by measuring and comparing the acceleration of the evaluation substrate including the Z direction and the acceleration of the stage. A substrate deviation evaluation method and a charged particle beam writing system are provided. By using the substrate misalignment evaluation method and system of the embodiment, when a pattern misalignment occurs at the time of drawing, it becomes easy to clarify the causal relationship with the substrate misalignment. In addition, it becomes easy to analyze the cause of substrate displacement.

  In addition, by using the substrate deviation evaluation method and system of the embodiment, for example, at the time of shipping inspection of a charged particle beam drawing apparatus, it is possible to easily and accurately check whether the specifications for the substrate deviation are satisfied. Is possible. Alternatively, it is possible to easily and accurately confirm whether there is an abnormality related to the substrate displacement during the periodic inspection of the charged particle beam drawing apparatus.

  The embodiments have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.

  For example, although an electron beam drawing apparatus has been described as an example of a charged particle beam drawing apparatus, the present invention can also be applied to an ion beam drawing apparatus such as a proton. Although the mask substrate has been described here as an example of the substrate, the present invention can be applied to, for example, an electron beam drawing apparatus that directly draws a pattern on a wafer with an electron beam.

  In addition, as the evaluation substrate 200, the evaluation substrate 200 including a storage unit, a control unit, a battery, and the like has been described as an example. From the viewpoint of evaluating in the same environment as when drawing, it is desirable to use such an evaluation substrate 200. However, for example, the evaluation can be performed by drawing a cable from the triaxial acceleration sensor to the outside of the chamber, performing data transfer, and supplying power.

  Further, the case where the evaluation is performed with the chamber in a vacuum state has been described as an example. This form is desirable from the viewpoint of evaluating in the same environment as when drawing. However, for example, the evaluation can be performed with the chamber opened to atmospheric pressure.

  In the embodiment, the case where the substrate is placed on the stage by point support with three support pins has been described as an example. Thus, in the point support mode, since the degree of freedom of movement of the mask in the Z direction is particularly large, the evaluation method and system of the present invention are useful. However, the substrate support method is not limited to this form, and for example, a support method using a clamp may be used.

  As mentioned above, although description was abbreviate | omitted about the part etc. which are not directly required for description of this invention, such as an apparatus structure and an evaluation method, a required apparatus structure and an evaluation method can be selected suitably, and can be used. In addition, all the charged particle beam drawing apparatus evaluation methods and charged particle beam drawing systems of the charged particle beam drawing apparatus that include elements of the present invention and can be appropriately modified by those skilled in the art are included in the scope of the present invention.

100 Electron beam lithography system 112 Stage
200 Evaluation board 208 Three-axis acceleration sensor 210 Storage unit 212 Control unit 304 X-position measurement laser interferometer 306 Y-position measurement laser interferometer

Claims (5)

Prepare an evaluation board equipped with a 3-axis acceleration sensor,
The evaluation substrate is placed on a stage that is movable in the horizontal X and Y directions perpendicular to each other,
Move the stage,
Measure acceleration applied to the evaluation substrate using the triaxial acceleration sensor;
Measure the position of the stage in the X direction and the Y direction using a laser interferometer,
Calculate the acceleration applied to the stage from the measurement result of the position,
A charged particle beam drawing apparatus characterized by analyzing an acceleration applied to the evaluation substrate and an acceleration applied to the stage to evaluate a substrate displacement, which is a displacement of a relative position between the stage and the substrate. Substrate misalignment evaluation method.   The evaluation substrate stores a data of acceleration measured by the triaxial acceleration sensor, the triaxial acceleration sensor, a control unit for controlling the storage unit, the triaxial acceleration sensor, and the storage unit And a battery serving as a power source for the control unit. The method for evaluating substrate deviation of a charged particle beam lithography apparatus according to claim 1.   The charge according to claim 1, wherein the chamber in which the stage is accommodated is evacuated, and measurement using the three-axis acceleration sensor and measurement using the laser interferometer are performed. Substrate misalignment evaluation method for particle beam drawing apparatus.   The stage tilt is measured using the laser interferometer, the stage yawing, rolling, and pitching are calculated from the tilt measurement result, and the acceleration applied to the evaluation substrate and the acceleration applied to the stage 4. The substrate displacement evaluation method for a charged particle beam lithography apparatus according to claim 1, wherein the substrate displacement is evaluated by analyzing yawing, rolling, and pitching of the stage. . A stage on which a substrate can be placed and is movable in horizontal X and Y directions orthogonal to each other, a laser interferometer that measures the X and Y positions of the stage, and a charged particle beam on the substrate on the stage A charged particle beam drawing apparatus comprising beam irradiation means for irradiation;
An evaluation substrate that can be placed on the stage, includes a three-axis acceleration sensor, and evaluates a substrate displacement that is a displacement of a relative position between the stage and the substrate;
A charged particle beam drawing system comprising:

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