JP2012211223A - Method for recovering glass fiber from fiber-reinforced plastic - Google Patents
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Abstract
Description
本発明は、繊維強化プラスチック(FRP:Fiber Reinforced Plastics)からのグラスファイバーの回収方法に関する。 The present invention relates to a method for recovering glass fibers from fiber reinforced plastics (FRP).
繊維強化プラスチック(FRP:Fiber Reinforced Plastics)製品は、熱硬化性ポリマーマトリクスで覆われた繊維質強化材を備えた複合材料で構成されている。繊維質強化材は、典型的にはグラスファイバーであるが、アラミド(ケブラー)ファイバー又はカーボンファイバー等であってもよい。熱硬化性ポリマーマトリクスは、液状樹脂として用いられ、樹脂分子を架橋する化学反応によって硬化する。繊維強化プラスチックは、耐食性や耐候性だけでなく、機械的強度が高く、軽量で、取り付け易く、耐久性が良く、個別の状況下で必要に応じて適用できるという性質を有している。従って、繊維強化プラスチックは、建築関連分野で広く用いられている。 Fiber Reinforced Plastics (FRP) products are composed of composite materials with a fibrous reinforcement covered with a thermosetting polymer matrix. The fiber reinforcement is typically glass fiber, but may be aramid (Kevlar) fiber or carbon fiber. The thermosetting polymer matrix is used as a liquid resin and is cured by a chemical reaction that crosslinks resin molecules. Fiber reinforced plastics have not only corrosion resistance and weather resistance, but also high mechanical strength, light weight, easy attachment, good durability, and properties that can be applied as needed under individual circumstances. Therefore, fiber reinforced plastics are widely used in the field of construction.
しかしながら、これらの特徴が、今度は逆に繊維強化プラスチックの廃棄物処理やリサイクルに深刻な問題を引き起こしている。リサイクルの問題は、主に、硬化反応が不可逆性であり、熱可塑性プラスチックのように、加熱しても硬化した固体プラスチックが元の液体の状態に戻らないという事実による。また、熱可塑性プラスチックとは異なり、繊維強化プラスチックのスクラップは、プラスチックのリサイクルでよく行われるような溶融及び再成形ができない。 However, these characteristics, in turn, cause serious problems in waste disposal and recycling of fiber reinforced plastics. The recycling problem is mainly due to the fact that the curing reaction is irreversible and, like a thermoplastic, the cured solid plastic does not return to its original liquid state upon heating. Also, unlike thermoplastics, fiber reinforced plastic scrap cannot be melted and reshaped as is often done in plastic recycling.
近年の繊維強化プラスチックの廃棄物処理は埋め立てが主流である。一方、セメントキルン燃料としてグラスファイバーを利用する代替法も一部では用いられている。この場合、グラスファイバーは原料にシリカを供給しつつ、ポートランドセメントを製造するのに必要なエネルギーに貢献している。また、これらと同時に、グラスファイバーを化学的に溶解又は分解する方法も研究されている(非特許文献1)。さらに、近年の他の技術としては、ポリマー分解のための超臨界流体の補助的な利用がある(非特許文献2)。 In recent years, waste disposal of fiber reinforced plastics is mainly landfill. On the other hand, an alternative method using glass fiber as a cement kiln fuel is also used in part. In this case, the glass fiber contributes to the energy required to produce Portland cement while supplying silica as a raw material. At the same time, a method for chemically dissolving or decomposing glass fibers has been studied (Non-patent Document 1). Furthermore, as another technique in recent years, there is auxiliary use of a supercritical fluid for polymer decomposition (Non-Patent Document 2).
しかしながら、非特許文献1に記載された方法は、ファイバーを短くするような造粒処理が必要であり、製造効率が良好とはいえず、また、毒性を示す可能性のある溶媒を多く使用している。また、非特許文献2に記載された方法は、大きな資本を必要とし、コスト面で不利である。 However, the method described in Non-Patent Document 1 requires a granulation treatment to shorten the fiber, and it cannot be said that the production efficiency is good, and a lot of solvents that may be toxic are used. ing. Further, the method described in Non-Patent Document 2 requires a large amount of capital and is disadvantageous in terms of cost.
そこで、本発明は、繊維強化プラスチックから、良好な効率及びコストでグラスファイバーをほぼ完全に回収する方法を提供することを課題とする。 Then, this invention makes it a subject to provide the method of collect | recovering glass fiber almost completely from a fiber reinforced plastic with favorable efficiency and cost.
本発明者は、既に半導体を用いたポリマーの分解方法を研究開発している(特許第4517146号)。当該技術は、半導体の熱活性を利用して、熱可塑性ポリマーのみならず、熱硬化性ポリマー(3次元ポリマー)も炭酸ガスと水とに完全分解するものである。本発明では、前記技術を応用することで、繊維強化プラスチックからのグラスファイバーをほぼ完全に回収することが可能となることを見いだした。 The present inventor has already researched and developed a polymer decomposition method using a semiconductor (Japanese Patent No. 4517146). In this technique, not only a thermoplastic polymer but also a thermosetting polymer (three-dimensional polymer) is completely decomposed into carbon dioxide gas and water using the thermal activity of a semiconductor. In the present invention, it has been found that the glass fiber from the fiber reinforced plastic can be almost completely recovered by applying the above technique.
以上の知見を基礎として完成した本発明は、グラスファイバーと、前記グラスファイバーを覆うように設けられたポリマーとを備えた繊維強化プラスチックを、酸素の存在下、半導体粉末に100℃以上で接触させ、前記ポリマーを酸化分解して除去することで、前記グラスファイバーを回収することを特徴とする繊維強化プラスチックからのグラスファイバーの回収方法である。 The present invention completed on the basis of the above knowledge is made by bringing a fiber reinforced plastic comprising glass fiber and a polymer provided so as to cover the glass fiber into contact with semiconductor powder at 100 ° C. or higher in the presence of oxygen. The glass fiber is recovered by oxidizing and removing the polymer to recover the glass fiber from the fiber reinforced plastic.
本発明に係るグラスファイバーの回収方法は一実施形態において、半導体の高温状態で生成する熱平衡キャリアーのうち、正孔酸化力を利用する。 In one embodiment, the glass fiber recovery method according to the present invention uses hole oxidizing power among thermal equilibrium carriers generated in a high temperature state of a semiconductor.
本発明に係るグラスファイバーの回収方法は別の一実施形態において、前記繊維強化プラスチックを半導体粉末に接触させる温度が100〜600℃である。 In another embodiment of the glass fiber recovery method according to the present invention, the temperature at which the fiber reinforced plastic is brought into contact with the semiconductor powder is 100 to 600 ° C.
本発明に係るグラスファイバーの回収方法は別の一実施形態において、前記半導体が高温状態及び酸素雰囲気下でも安定に存在する半導体である。 In another embodiment of the glass fiber recovery method according to the present invention, the semiconductor is a semiconductor that exists stably even in a high temperature state and in an oxygen atmosphere.
本発明に係るグラスファイバーの回収方法は更に別の一実施形態において、前記半導体が酸化物半導体である。 In still another embodiment of the glass fiber recovery method according to the present invention, the semiconductor is an oxide semiconductor.
本発明に係るグラスファイバーの回収方法は更に別の一実施形態において、前記酸化物半導体がCr2O3、NiO、TiO2、又は、Fe2O3である。 In still another embodiment of the glass fiber recovery method according to the present invention, the oxide semiconductor is Cr 2 O 3 , NiO, TiO 2 , or Fe 2 O 3 .
本発明に係るグラスファイバーの回収方法は更に別の一実施形態において、前記ポリマーが熱硬化性ポリマーである。 In still another embodiment of the glass fiber recovery method according to the present invention, the polymer is a thermosetting polymer.
本発明に係るグラスファイバーの回収方法は更に別の一実施形態において、前記ポリマーが熱可塑性ポリマーである。 In still another embodiment of the glass fiber recovery method according to the present invention, the polymer is a thermoplastic polymer.
本発明によれば、繊維強化プラスチックから、良好な効率及びコストでグラスファイバーをほぼ完全に回収する方法を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the method of collect | recovering glass fiber almost completely from a fiber reinforced plastic with favorable efficiency and cost can be provided.
(本発明の繊維強化プラスチックからのグラスファイバーの回収方法)
本発明は、グラスファイバーと、グラスファイバーを覆うように設けられたポリマーとを備えた繊維強化プラスチックを、酸素の存在下、半導体粉末に100〜600℃で接触させ、前記ポリマーを酸化分解して除去することで、前記グラスファイバーを回収することを特徴とする繊維強化プラスチックからのグラスファイバーの回収方法に係る。
(Method for recovering glass fiber from the fiber-reinforced plastic of the present invention)
In the present invention, a fiber reinforced plastic comprising glass fiber and a polymer provided so as to cover the glass fiber is brought into contact with semiconductor powder at 100 to 600 ° C. in the presence of oxygen to oxidatively decompose the polymer. The glass fiber is recovered by removing the glass fiber, and the glass fiber is recovered from the fiber reinforced plastic.
本発明に係る繊維強化プラスチックからのグラスファイバーの回収方法は、半導体の熱活性を利用したポリマーの酸化分解による除去で達成される。まず、この酸化分解のメカニズムについて、以下に例を挙げて説明する。 The method for recovering glass fiber from the fiber reinforced plastic according to the present invention is achieved by removing the polymer by oxidative decomposition utilizing the thermal activity of the semiconductor. First, the mechanism of this oxidative decomposition will be described below with an example.
(本発明の繊維強化プラスチックにおけるポリマーの酸化分解メカニズム)
半導体を熱的に励起すると、指数関数的に電子と正孔とが生成する。この正孔をポリマーの酸化分解に応用する。例として、図1にポリカーボネート(PC)の分解メカニズムの概略説明図を示す。図1に示すポリカーボネートの分解は、半導体として酸化チタン粉末を用い、これを粒状のポリカーボネートに加えて加熱攪拌することで行っている。ポリカーボネートは約200℃で融解し、固体の酸化チタンと“固体/液体”界面を形成する。界面における様子を図1の挿絵で見ると、まず正孔からポリカーボネートから結合電子を奪い、ポリカーボネート内にカチオンラジカルを生成する。500℃の温度ではラジカルはポリマー内を伝播し、ラジカル開裂を誘起して、ポリマーはフラグメント化される。この過程におけるラジカルの増殖ならびにポリカーボネートの分子量の低下はESR測定ならびに熱重量分析で実証されている。そして、フラグメント化された分子は酸素下で完全燃焼して水と炭酸ガスとなる。熱エネルギーの役割は単に正孔の大量生成ばかりでなく、ラジカルの伝播と開裂を誘起し、最終的には裁断化された分子を酸素下で完全燃焼させることである。さらに、分解反応が継続的に起こるためには、価電子帯では正孔による酸化反応、また伝導帯では電子による還元反応(O2+e-→O2 -)が起こることが必要である。
(Oxidative degradation mechanism of polymer in fiber-reinforced plastic of the present invention)
When a semiconductor is thermally excited, electrons and holes are generated exponentially. This hole is applied to oxidative decomposition of the polymer. As an example, FIG. 1 shows a schematic explanatory diagram of the decomposition mechanism of polycarbonate (PC). The decomposition of the polycarbonate shown in FIG. 1 is performed by using titanium oxide powder as a semiconductor, adding this to a granular polycarbonate, and stirring with heating. Polycarbonate melts at about 200 ° C. and forms a “solid / liquid” interface with solid titanium oxide. When the state at the interface is seen in the illustration of FIG. 1, first, the bound electrons are taken from the polycarbonate from the holes, and a cation radical is generated in the polycarbonate. At a temperature of 500 ° C., radicals propagate through the polymer, inducing radical cleavage and the polymer is fragmented. The growth of radicals and the decrease in the molecular weight of polycarbonate during this process have been demonstrated by ESR measurement and thermogravimetric analysis. The fragmented molecules are completely burned under oxygen to become water and carbon dioxide. The role of thermal energy is not only to generate a large amount of holes, but also to induce the propagation and cleavage of radicals and ultimately burn the chopped molecules completely under oxygen. Further, in order for the decomposition reaction to occur continuously, it is necessary that an oxidation reaction by holes occurs in the valence band, and a reduction reaction by electrons (O 2 + e − → O 2 − ) occurs in the conduction band.
上記ポリカーボネートの分解メカニズムのフローについて整理すると、まず、第1段階では、ポリカーボネート鎖が分子中の極性の高いカルボニル基と酸化チタンの酸素欠陥サイトとの静電的な相互作用により酸化チタン表面に吸着する。次に、第2段階では、ポリカーボネートが熱励起により生成した正孔により酸化されてポリカーボネートの低分子化が起こる。次に、第3段階では、低分子化したポリカーボネートが酸素下で完全に燃焼し、炭酸ガスと水とに分解される。 The flow of decomposition mechanism of the polycarbonate is summarized as follows. First, in the first stage, the polycarbonate chain is adsorbed on the titanium oxide surface by electrostatic interaction between the highly polar carbonyl group in the molecule and the oxygen defect site of titanium oxide. To do. Next, in the second stage, the polycarbonate is oxidized by holes generated by thermal excitation, and the molecular weight of the polycarbonate is reduced. Next, in the third stage, the low molecular weight polycarbonate is completely burned under oxygen and decomposed into carbon dioxide and water.
酸化チタン表面の電子の授受について言えば、熱励起された電子は、酸素を還元し、これが酸化チタンの表面に吸着して上向きのバンドベンディング(バンドの湾曲)を誘起する。このバンドベンディングにより、熱励起された正孔は表面に集積し、PCを酸化する。電子による酸化還元のエネルギー準位は酸化チタンの伝導帯の底よりも約0.13eV上方に位置しているから、この反応は活性化過程である。しかしこの反応は350℃の状態では十分に達成されていると考えられる。これに対して正孔の表面への移動はバリヤフリー過程である。このように、酸化チタン表面の酸化サイト(伝導帯)と還元サイト(価電子帯)で反応が起こり、PCが分解するものと考えられる Regarding the transfer of electrons on the surface of titanium oxide, the thermally excited electrons reduce oxygen, which is adsorbed on the surface of titanium oxide and induces upward band bending (curving of the band). By this band bending, the thermally excited holes accumulate on the surface and oxidize the PC. This reaction is an activation process because the energy level of redox by electrons is located about 0.13 eV above the bottom of the conduction band of titanium oxide. However, this reaction is considered to be sufficiently achieved at 350 ° C. In contrast, the movement of holes to the surface is a barrier-free process. Thus, it is considered that reaction occurs at the oxidation site (conduction band) and reduction site (valence band) on the surface of titanium oxide, and PC is decomposed.
酸化チタンを熱励起し、バンド間遷移により電子と正孔とを生成するシステムでは酸化チタンのバンドギャップが3.2eVと大きいため、バンド間遷移が立ち上がる温度が高く、その結果350〜500℃を必要とする。しかしながら、酸化チタンに限らず、高温、酸素雰囲気で安定であれば、どのような半導体でも使用できるので、バンドギャップの小さな半導体であれば基本的に動作温度が低いこととなる。このため、適した加熱温度はより幅が大きく、100℃以上であってもよい。 In a system in which titanium oxide is thermally excited to generate electrons and holes by interband transition, the bandgap of titanium oxide is as large as 3.2 eV, so the temperature at which the interband transition rises is high. I need. However, not only titanium oxide, but any semiconductor can be used as long as it is stable in a high temperature and oxygen atmosphere. Therefore, an operating temperature is basically low for a semiconductor having a small band gap. For this reason, the suitable heating temperature is larger and may be 100 ° C. or higher.
(本発明の繊維強化プラスチックにおけるポリマーの種類)
本発明で分解される有機化合物のうち、ポリマ−としては、金属酸化物の表面に強く吸着するようなカルボニル基にて代表される極性基を有するものが好ましいが、無極性ポリマ−にあっても十分効果をもたらす。また、ポリマ−の融点は400℃以下ものであることが好ましい。こうしたポリマーとしては熱可塑性樹脂であり、例えばポリカーボネート、ポリエチレン、ポリプロピレン、ポリ塩化ビニル、ポリスチレン、PET樹脂、ABS樹脂、ポリアミド、ポリイミド、メタクリル樹脂、ポリビニルアルコール、ポリアセタール、石油樹脂、AS樹脂、変性ポリフェニレンエーテル、塩化ビニリデン樹脂、ポリブチレンテレフタレート、ポリブテン、フッ素樹脂、ポリアクリレート等を例示することができる。これら有機化合物は、溶融状態にて半導体と接触することになる。また、熱可塑性樹脂に比べ分解の温度は上がるが、熱硬化型の樹脂であるフェノール樹脂、ウレタンフォーム、ポリウレタン、ユリア樹脂、エポキシ樹脂、不飽和ポリエステル樹脂、メラミン樹脂、アルキド樹脂等にも有効である。熱硬化性ポリマーの分解法としては、通常はポリマ−を微細に粉砕し、これに酸化チタンを混合して加熱することで行われる。なお、通常の熱硬化性ポリマ−の燃焼処理は700〜1000℃に加熱して行うが、燃焼炉の耐久性に問題が生ずるという点が指摘されている。しかるに、本発明にあっては、600℃以下の加熱で分解が可能であり、その効果は大きい。また、上述の種々のポリマーの混合物でも本方法が適用できる。さらに、本発明はポリ塩化ビニルを代表とするハロゲン分子含有ポリマ−の分解にも有効であり、その際発生する生成物は水、炭酸ガス及び塩素が主成分となるので、塩素は何らかの方法で捕集する必要がある。このようなハロゲン含有ポリマーの分解において、生成物中にはダイオキシン等何らの有害な有機ハロゲン化物を生成しないことは特記すべきことである。
(Type of polymer in the fiber-reinforced plastic of the present invention)
Of the organic compounds decomposed in the present invention, the polymer preferably has a polar group represented by a carbonyl group that strongly adsorbs to the surface of the metal oxide. Also has a sufficient effect. The melting point of the polymer is preferably 400 ° C. or lower. Such polymers are thermoplastic resins such as polycarbonate, polyethylene, polypropylene, polyvinyl chloride, polystyrene, PET resin, ABS resin, polyamide, polyimide, methacrylic resin, polyvinyl alcohol, polyacetal, petroleum resin, AS resin, modified polyphenylene ether. And vinylidene chloride resin, polybutylene terephthalate, polybutene, fluororesin, polyacrylate and the like. These organic compounds come into contact with the semiconductor in the molten state. Although the decomposition temperature is higher than that of thermoplastic resin, it is also effective for thermosetting resins such as phenol resin, urethane foam, polyurethane, urea resin, epoxy resin, unsaturated polyester resin, melamine resin, and alkyd resin. is there. As a method for decomposing the thermosetting polymer, usually, the polymer is finely pulverized, mixed with titanium oxide and heated. In addition, although the combustion process of a normal thermosetting polymer is performed by heating to 700-1000 degreeC, it has been pointed out that the problem arises in durability of a combustion furnace. However, in the present invention, decomposition is possible by heating at 600 ° C. or less, and the effect is great. The method can also be applied to a mixture of various polymers described above. Furthermore, the present invention is also effective for the decomposition of halogen molecule-containing polymers such as polyvinyl chloride, and the products generated at that time are mainly composed of water, carbon dioxide gas and chlorine. It is necessary to collect. It should be noted that in the decomposition of such a halogen-containing polymer, no harmful organic halide such as dioxin is formed in the product.
(半導体の種類)
以上、半導体として酸化チタンをもって説明したが、使用できる半導体は、高温状態で酸素雰囲気下にあっても安定な物質であり、例えば、次の化学式で示される物質等が挙げられる。ただし、各半導体のバンドギャップが異なるため有機化合物の分解温度はそれに伴い変化する。
BeO,MgO,CaO,SrO,BaO,CeO2,ThO2,UO3,U3O8,TiO2,ZrO2,V205,Y2O3,Y2O2S,Nb2O5,Ta2O5,MoO3,WO3,MnO2,Fe2O3,MgFe2O4,NiFe2O4,ZnFe2O4,ZnCo2O4,ZnO,CdO,Al2O3,MgAl2O4,ZnAl2O4,Tl2O3,In2O3,SiO2,SnO2,PbO2,UO2,Cr2O3,MgCr2O4,FeCrO4,CoCrO4,ZnCr2O4,WO2,MnO,Mn3O4,Mn2O3,FeO,NiO,CoO,Co3O4,PdO,CuO,Cu2O,Ag2O,CoAl2O4,NiAl2O4,Tl2O,GeO,PbO,TiO,Ti2O3,VO,MoO2,IrO2,RuO2,CdS、CdSe,CdTe。
(Semiconductor type)
As described above, titanium oxide has been described as a semiconductor. However, a semiconductor that can be used is a stable substance even in an oxygen atmosphere at a high temperature, for example, a substance represented by the following chemical formula. However, since the band gap of each semiconductor is different, the decomposition temperature of the organic compound changes accordingly.
BeO, MgO, CaO, SrO, BaO, CeO 2, ThO 2, UO 3, U 3 O 8, TiO 2, ZrO 2, V 2 0 5, Y 2 O 3, Y 2 O 2 S, Nb 2 O 5 , Ta 2 O 5 , MoO 3 , WO 3 , MnO 2 , Fe 2 O 3 , MgFe 2 O 4 , NiFe 2 O 4 , ZnFe 2 O 4 , ZnCo 2 O 4 , ZnO, CdO, Al 2 O 3 , MgAl 2 O 4 , ZnAl 2 O 4 , Tl 2 O 3 , In 2 O 3 , SiO 2 , SnO 2 , PbO 2 , UO 2 , Cr 2 O 3 , MgCr 2 O 4 , FeCrO 4 , CoCrO 4 , ZnCr 2 O 4, WO 2, MnO, Mn 3 O 4, Mn 2 O 3, FeO, NiO, CoO, Co 3 O 4, PdO, CuO, Cu 2 O, Ag 2 O, CoAl 2 O 4, NiAl 2 O 4, Tl 2 O, GeO, PbO, TiO, Ti 2 O 3, VO, MoO 2, IrO 2 RuO 2, CdS, CdSe, CdTe .
なかでも、酸化物半導体が好ましく、特に酸化チタンや酸化亜鉛は活性が高く、無害であるため安全性が優れるので、好ましく、特に、酸化チタンの結晶形がアナターゼ型のものは活性が高いが、ルチル型のものでも良い。また、上記の半導体の中でも光伝導を示すものは活性が高い。上記半導体は、熱が加えられると活性化し、樹脂成形品を酸化分解する機能を有する。粒径は特に限定されないが、表面反応であるので比表面積が大きく、かつ、結晶性の高いものが好ましい。 Among them, an oxide semiconductor is preferable, and particularly titanium oxide and zinc oxide are high in activity and harmless, and thus excellent in safety.In particular, a titanium oxide crystal form having anatase type has high activity, A rutile type may be used. Among the above semiconductors, those showing photoconductivity are highly active. The semiconductor is activated when heat is applied, and has a function of oxidizing and decomposing a resin molded product. The particle size is not particularly limited, but it is preferably a surface reaction that has a large specific surface area and high crystallinity.
本発明の骨子は上記半導体と被分解物との接触反応であるから、上記半導体の比率を上げると被分解物との接触頻度が増し処理時間が短くなる。また、攪拌することによっても接触頻度は格段に上昇するので、分解に要する時間は大幅に短縮される。バッチ方式で処理を行うときの酸化チタンの混入量は全体の10質量%以上が適当であるが、分解反応は10質量%以下の混合比(例えば3%)でも(処理時間は長くなるが)可能であることは言うまでもない。 Since the gist of the present invention is the contact reaction between the semiconductor and the substance to be decomposed, increasing the ratio of the semiconductor increases the frequency of contact with the substance to be decomposed and shortens the processing time. In addition, since the contact frequency is remarkably increased by stirring, the time required for decomposition is greatly reduced. The amount of titanium oxide mixed in the batch process is appropriate to be 10% by mass or more of the total, but the decomposition reaction may be performed at a mixing ratio of 10% by mass or less (eg 3%) (although the processing time will be longer). It goes without saying that it is possible.
場合によっては、酸化チタンに前処理を施すのが良く、好ましくは、ポリカーボネートをトルエンに溶解し、酸化チタンを加えて攪拌し、酸化チタン表面にトルエン溶媒にてポリカーボネートを付着しておくのが良い。前処理としての良溶媒としては、トルエンが好ましいが、アセトンやクロロナフタレン等が挙げられる。 In some cases, titanium oxide may be pretreated. Preferably, polycarbonate is dissolved in toluene, titanium oxide is added and stirred, and the polycarbonate is adhered to the surface of titanium oxide with a toluene solvent. . As a good solvent for pretreatment, toluene is preferable, but acetone, chloronaphthalene, and the like can be given.
酸化チタンにポリマーを被覆する際のポリマー調製液の最適な濃度はポリマーにより異なり、特に限定されないが、一般的には0.1〜30%程度の濃度が好適で、ポリマーにポリカーボネートを使用する場合には特に3〜5%が好適である。 The optimum concentration of the polymer preparation liquid when coating the polymer on titanium oxide varies depending on the polymer and is not particularly limited, but generally a concentration of about 0.1 to 30% is suitable, and when polycarbonate is used for the polymer In particular, 3 to 5% is preferable.
本発明の繊維強化プラスチックからのグラスファイバーの回収方法は、上述のような構成により、ポリマーをほぼ完全に燃焼して除去するため、グラスファイバーの損傷を抑制して良好な状態で回収することができるため、効果なグライスファイバーの完全回収及びリサイクルが可能となる。また、反応熱を熱エネルギーとして利用することができ、製造効率が良好となる。また、非常に簡便な装置及び方法で繊維強化プラスチックからグラスファイバーを回収することができるため、製造効率及び製造コストが良好となる。 In the method for recovering glass fiber from the fiber reinforced plastic of the present invention, since the polymer is almost completely burned and removed by the above-described configuration, the glass fiber can be recovered in a good state while suppressing damage to the glass fiber. As a result, it is possible to completely recover and recycle the effective Glyce fiber. Moreover, reaction heat can be utilized as thermal energy, and production efficiency is improved. Further, since glass fiber can be recovered from the fiber reinforced plastic with a very simple apparatus and method, the production efficiency and the production cost are improved.
次に、本発明に係る実施例を以下に説明するが、本発明はこれらに限定されるものではない。 Next, examples according to the present invention will be described below, but the present invention is not limited thereto.
(半導体の準備)
半導体粉末として、Cr2O3〔純度99%、被表面積3m2/g:和光純薬工業社製〕、TiO2〔ST−01:活性TiO2(被表面積298m2/g、アナターゼ型):石原産業社製〕、NiO〔純度99%、被表面積1m2/g:和光純薬工業社製〕、α−Fe2O3〔被表面積4.1m2/g:戸田工業社製〕、不飽和熱硬化性ポリエステル樹脂〔R100NP、オルトフタル酸由来:ジャパンコンポジット社製〕を準備した。
(Preparation of semiconductor)
As semiconductor powder, Cr 2 O 3 [purity 99%, surface area 3 m 2 / g: manufactured by Wako Pure Chemical Industries, Ltd.], TiO 2 [ST-01: active TiO 2 (surface area 298 m 2 / g, anatase type): Ishihara Sangyo Co., Ltd.], NiO [99% purity, surface area 1 m 2 / g: Wako Pure Chemical Industries, Ltd.], α-Fe 2 O 3 [surface area 4.1 m 2 / g: Toda Kogyo Co., Ltd.], unsaturated A thermosetting polyester resin [R100NP, derived from orthophthalic acid: manufactured by Japan Composite Co., Ltd.] was prepared.
(繊維強化プラスチックの調整)
直径約13μmのグラスファイバー(チョップドストラドマット状)と、開始剤としてのメチルエチルケトンパーオキサイド及び促進剤としてのナフテン酸コバルトとを用いて、樹脂70質量%及びグラスファイバー30質量%の繊維強化プラスチックプレート(100×100×3mm)を室温で調整した。次に、このプレートを80℃で3時間硬化した。このプレートを約10×10×3mmの大きさの小片に裁断し、粉砕等の前処理を行わずに以下の試験に用いた。
(Adjustment of fiber reinforced plastic)
Fiber reinforced plastic plate (70% by mass resin and 30% by mass glass fiber) using glass fiber (chopped stradomat) having a diameter of about 13 μm, methyl ethyl ketone peroxide as an initiator and cobalt naphthenate as an accelerator. 100 × 100 × 3 mm) was adjusted at room temperature. The plate was then cured at 80 ° C. for 3 hours. This plate was cut into small pieces having a size of about 10 × 10 × 3 mm and used for the following tests without pretreatment such as pulverization.
(半導体の熱活性によるグラスファイバーの回収)
図2(a)に示すように、Cr2O3粉末5gをセラミックの50mm径の開口を有するルツボ内に敷き、Cr2O3粉末上に繊維強化プラスチックの小片を置いた。次に、ルツボを500℃のオーブン内に入れた。5分経過後、小片の色が黄色から茶色へ変わり、グラスファイバーを残したまま水及び炭酸ガスへ分解し始めた(視界から消え始めた)。10分経過後、図2(b)に示すように、ポリマーで覆われていたグラスファイバーの初めの形態(チョップドストラドマット状)が出現した。図3(a)及び(b)に、チョップドストラドマット状のグラスファイバー、及び、それをほぐしたものの外観写真を示す。図4に、プレートの断面模式図と、当該模式図の上部(top)、中部(middle)及び底部(bottom)のファイバーの走査型電子顕微鏡(SEM)による写真を示す。各部のファイバーの表面は、非常に滑らかであり、クラック等の損傷は見当たらなかった。これは、グラスファイバーが欠陥無く完全に回収されたことを示している。このように、従来のグラスファイバーのリサイクル法で生じていたファイバー表面の損傷や収縮等の問題が、本発明によれば生じないことが確認された。
(Glass fiber recovery by thermal activation of semiconductors)
As shown in FIG. 2 (a), 5 g of Cr 2 O 3 powder was laid in a crucible having a ceramic 50 mm diameter opening, and a small piece of fiber reinforced plastic was placed on the Cr 2 O 3 powder. Next, the crucible was placed in an oven at 500 ° C. After 5 minutes, the color of the small piece changed from yellow to brown, and it started to decompose into water and carbon dioxide while leaving the glass fiber (begin disappearing from view). After 10 minutes, as shown in FIG. 2 (b), the first form of glass fiber covered with polymer (chopped strado mat shape) appeared. 3 (a) and 3 (b) show appearance photographs of chopped stradomat-like glass fibers and loosened ones. In FIG. 4, the cross-sectional schematic diagram of a plate and the photograph by the scanning electron microscope (SEM) of the fiber of the upper part (top), middle part (bottom), and bottom part (bottom) of the said schematic diagram are shown. The surface of each part of the fiber was very smooth, and no damage such as cracks was found. This indicates that the glass fiber was completely recovered without defects. As described above, it was confirmed that problems such as damage and shrinkage of the fiber surface, which were caused by the conventional glass fiber recycling method, do not occur according to the present invention.
続いて、Cr2O3粉末を用いて行った上記試験と同様の試験を、TiO2粉末、NiO粉末及びα−Fe2O3粉末についても同様に行ったところ、それぞれ上記試験と同様の結果を得た。 Subsequently, a test similar to the above test performed using Cr 2 O 3 powder was also performed on TiO 2 powder, NiO powder and α-Fe 2 O 3 powder. Got.
さらに、Cr2O3粉末、TiO2粉末、NiO粉末及びα−Fe2O3粉末について、それぞれ500℃ではなく、350℃で上記試験と同様の試験を行ったところ、分解にかかった時間は少し多くなったが、上記試験と同様の結果を得た。 Furthermore, when Cr 2 O 3 powder, TiO 2 powder, NiO powder and α-Fe 2 O 3 powder were tested at 350 ° C. instead of 500 ° C., the time taken for decomposition was Although it increased a little, the result similar to the said test was obtained.
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