JP2012198536A - Active matrix type display device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an active matrix type display device in which electrodes are certainly and stably connected by low connection resistances.SOLUTION: An active matrix type display device has; a first substrate; a thin-film transistor formed on one main surface of the first substrate; a second substrate; and a display element formed on one main surface of the second substrate. The first substrate and the second substrate are bonded so as to oppose the main surface of the first substrate and the main surface of the second substrate. A contact spacer which connects a first electrode of one of a source electrode and a drain electrode of the thin-film transistor, and a lower electrode of one of an anode electrode and a cathode electrode of the display element and keeps an interval between the first substrate and the second substrate is provided at one of the first substrate and the second substrate. The other of the first substrate and the second substrate has a contact hole opposing to the contact spacer. A tip end portion of the contact spacer is fixed in the contact hole.

Description

The present invention relates to an active matrix display device and a manufacturing method thereof.

  An active matrix display device using an organic EL element does not require a backlight because the display element is self-luminous, can be reduced in weight and thickness, and is superior to a liquid crystal display device in view angle and contrast. Yes. This active matrix display device is manufactured, for example, by bonding a substrate on which a drive circuit having a switching thin film transistor is formed and a substrate on which an organic EL element is formed, as disclosed in Patent Document 1. . In the active matrix display device manufactured as described above, the electrode of the display element and the electrode of the drive circuit are electrically connected by, for example, a conductive spacer.

JP 2006-114910 A

However, in an active matrix display device manufactured by bonding a thin film transistor substrate on which a driving circuit is formed and a substrate on which an organic EL element is formed, stable contact with no contact failure between electrodes formed on different substrates The challenge is how to achieve electrical continuity.
In particular, when the flexible substrates are bonded together, it is important to firmly connect the electrodes so that the contact portion does not peel when the substrates are bent.
In addition, if electrodes are connected using a flexible anisotropic conductive adhesive film, a certain effect can be obtained in preventing peeling, but the connection resistance cannot be lowered sufficiently compared to metal bonding. In addition, since the connection region is a limited region of one pixel of the display device, there is a problem that connection resistance varies depending on the dispersion state of the conductive particles in the anisotropic conductive adhesive film.
In addition, there is a concern that the adhesive between the adhesive of the anisotropic conductive adhesive film and the thin film transistor substrate or the substrate on which the organic EL element is formed cannot secure the adhesiveness or the influence of the difference in the degree of expansion and contraction of the substrate due to the temperature change. Is done.

  Therefore, an object of the present invention is to provide an active matrix display device in which electrodes formed on two substrates are reliably and stably connected with low connection resistance and a method for manufacturing the same.

In order to achieve the above object, an active matrix display device according to the present invention includes:
A thin film transistor having a first substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode, and a semiconductor film formed on one main surface of the first substrate, a second substrate, an anode electrode, and a cathode And a display element formed on one main surface of the second substrate, wherein the first substrate and the second substrate are main surfaces on which the thin film transistors of the first substrate are formed. And an active matrix display device in which the main surface of the second substrate on which the display element is formed is bonded oppositely,
A first electrode which is one of a source electrode and a drain electrode of the thin film transistor is electrically connected to a lower electrode which is one of an anode electrode and a cathode electrode of the display element. And one of the first substrate and the second substrate has a contact spacer for maintaining a predetermined distance between the first substrate and the second substrate,
The other substrate has a contact hole facing the contact spacer,
The contact spacer has a tip end fixed in the contact hole.

  In one embodiment of the present invention, the contact spacer includes a columnar insulating structure and a conductive film formed on the surface thereof.

  In one embodiment of the present invention, the contact spacer is formed on the lower electrode, the contact hole is formed on the first electrode, and a surface of the first electrode is exposed on a bottom surface of the contact hole. Has been.

  In one embodiment of the present invention, the contact spacer is formed on the first electrode, the contact hole is formed on the lower electrode, and a surface of the lower electrode is exposed on a bottom surface of the contact hole. ing.

  In one embodiment of the present invention, a conductive film connected to the first electrode or the lower electrode is formed on a side surface of the contact hole.

  In one embodiment of the present invention, the first electrode and the lower electrode are electrically connected via a bonding member filled in at least a part of the contact hole, and the tip of the contact spacer Is embedded in the joining member.

  In one embodiment of the present invention, the joining member is made of a material formed by solidifying conductive ink or conductive paste by drying or sintering.

  In one embodiment of the present invention, the conductive ink contains a liquid medium and inorganic nanoparticles dispersed in the liquid medium.

  In one embodiment of the present invention, the inorganic nanoparticles include at least one selected from the group consisting of Au, Ag, Cu, Pd, Pt, Ni, ITO, Al, silver sulfide, and silver oxide.

  In one embodiment of the present invention, the conductive paste includes at least one selected from the group consisting of a PbSn alloy, a SnAg alloy, and Ag.

  Moreover, with the form with this invention, the said electrically conductive paste contains a polymer.

  In one embodiment of the present invention, the thin film transistor includes an organic semiconductor.

Furthermore, the method for manufacturing an active matrix display device according to the present invention includes a first substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode, and a semiconductor film, on one main surface of the first substrate. A method of manufacturing an active matrix display device comprising: a thin film transistor formed on a first substrate; a second substrate; and a display element having an anode electrode and a cathode electrode and formed on one main surface of the second substrate. The first substrate and the second substrate are bonded together so that the main surface of the first substrate on which the thin film transistor is formed and the main surface of the second substrate on which the display element is formed are opposed to each other. A method comprising:
A first electrode which is one of a source electrode and a drain electrode of the thin film transistor is electrically connected to a lower electrode which is one of an anode electrode and a cathode electrode of the display element. And forming a contact spacer for maintaining a predetermined distance between the first substrate and the second substrate on one of the first substrate and the second substrate;
Forming a contact hole facing the contact spacer on the other substrate;
Bonding the first substrate and the second substrate in order to fix the tip of the contact spacer in the contact hole by a bonding member and electrically connect the first electrode and the lower electrode;
It is characterized by including.

In one embodiment of the present invention, the step of bonding the first substrate and the second substrate includes:
Filling the contact hole with conductive ink or conductive paste using a plate printing method or a plateless printing method;
Sinking the tip of the contact spacer into the filled conductive ink or conductive paste;
Solidifying the conductive ink or conductive paste in which the tip portion is inserted by drying or sintering.

In one embodiment of the present invention, the step of bonding the first substrate and the second substrate includes:
Transfer printing from the transfer printing plate with conductive ink or conductive paste on the tip of the contact spacer;
Filling the contact hole with the conductive ink or the conductive paste by inserting the contact spacer on which the conductive ink or the conductive paste is transferred and printed into the contact hole;
Solidifying the conductive ink or conductive paste filled in the contact hole by drying or sintering.

In the active matrix display device according to the present invention configured as described above, one of the first substrate and the second substrate electrically connects one electrode of the thin film transistor and the lower electrode, and Since the first substrate and the second substrate have a contact spacer that maintains a predetermined distance, and the tip of the contact spacer is fixed by a contact hole provided in the other substrate, the first substrate And the second substrate can be reliably connected without contact failure.
In the method of manufacturing the active matrix display device according to the present invention, the bonding member is applied by using a contact spacer or a contact hole by, for example, a plate printing method or a plateless printing method using Ag nanoparticle dispersed ink. Since it can do, the application | coating process of a joining member can be simplified. In particular, the process can be further simplified by directly transferring and printing the joining member on the tip of the contact spacer while assuming the contact spacer as a relief plate.
Furthermore, when the Ag nanoparticle dispersed ink is bonded by sintering, a strong connection by metal bonding can be realized, and the bonded portion is not affected by the temperature change of the surroundings or the heat generated by the current. A stable joined state can be obtained.

1 is a cross-sectional view schematically showing a configuration of an active matrix display device according to Embodiment 1 of the present invention. FIG. 6 is a process flow diagram of a manufacturing method according to the active matrix display device of Embodiment 1. It is sectional drawing of the process of wash | cleaning the 1st board | substrate 1 of step DS1. It is sectional drawing of the process of forming the metal layer containing the gate electrode layer 2 of step DS2. It is sectional drawing of the process of forming the gate insulating film 3 of step DS3. It is sectional drawing of the process of forming the metal layer containing the source electrode 4 and the drain electrode 5 of step DS4. It is sectional drawing of the process of forming the semiconductor layer 6 of step DS5. It is sectional drawing of the process of forming the protective film 7 of step DS6, and forming the contact hole 14. FIG. It is sectional drawing of the process of wash | cleaning the board | substrate 8 of step LS1. It is sectional drawing of the process of forming the conductive layer containing the anode electrode 9 of step LS2. It is sectional drawing of the process of forming the electrode separator 11 on the anode electrode 9 of step LS3. It is sectional drawing of the process of forming the contact spacer 12 on the anode electrode 9 of step LS4. It is sectional drawing of the process of forming light emitting elements, such as an organic EL element which is the light emission part 10, on the anode electrode 9 of the element area | region divided by the electrode separator 11 of step LS5. It is sectional drawing of the process of carrying out transfer printing of nanoparticle Ag and Ag paste at the front-end | tip of the contact spacer 12 of step BS1. It is sectional drawing of the process of bonding the board | substrates of step BS2. It is sectional drawing which shows typically the structure of the active matrix type display apparatus of Embodiment 2 which concerns on this invention. It is sectional drawing which shows typically the structure of the active matrix type display apparatus of Embodiment 3 which concerns on this invention. It is sectional drawing which shows typically the structure of the active matrix type display apparatus of Embodiment 4 which concerns on this invention. It is sectional drawing which shows typically the structure of the active matrix type display apparatus of Embodiment 5 which concerns on this invention. 1A is a plan view showing an element configuration of an embodiment according to the present invention, FIG. 1A is a plan view when an organic thin film transistor Tr1 is formed on a first substrate 1, and FIG. 2B is a light emission on a second substrate 8; A plan view when the portion 10 is formed, (c) is a plan view when the first substrate 1 and the second substrate 2 are bonded together. FIG. 6 is a diagram showing output characteristics of the display device manufactured in Example 1.

Hereinafter, an active matrix display device according to an embodiment of the present invention will be described with reference to the drawings.
Embodiment 1. FIG.
FIG. 1 is a cross-sectional view schematically showing a configuration of an active matrix display device according to Embodiment 1 of the present invention.
The active matrix display device according to the first embodiment of the present invention includes a first substrate 1, a gate electrode, a gate insulating film, a source electrode, a drain electrode, and a semiconductor film, on one main surface of the first substrate. A thin film transistor formed on the first substrate; a second substrate 8; a display element having an anode electrode (lower electrode) 9 and a cathode electrode formed on one main surface of the second substrate; And the second substrate is a display device in which a main surface of the first substrate on which the thin film transistor is formed and a main surface of the second substrate on which the display element is formed are bonded together, It is configured as follows.
In this specification, the lower electrode is an electrode formed in contact with the second substrate or closest to the second substrate among other conductive patterns existing on the second substrate. Some of them are not limited to those located below.
In addition, the expression “upper” or “lower” refers to a side or a location close to the substrate as “lower”, and a side or location away from the substrate as “up”.

  As shown in FIG. 1, a gate insulating film 3 is formed on one main surface of the first substrate 1 via a gate electrode 2, and a source electrode 4 and a drain electrode 5 are formed on the gate insulating film 3. The semiconductor layer 6 is formed over the source electrode 4 and the drain electrode 5 so as to be filled with a predetermined interval on the gate electrode 2 and to fill the interval. As described above, the thin film transistor is formed on the first substrate 1, and the protective film 7 is formed so as to cover the thin film transistor.

In the first embodiment, a contact hole 14 that penetrates the protective film 7 is formed on the drain electrode 5. The surface of the drain electrode 5 is exposed at the bottom surface of the contact hole 14.
Here, the contact hole is a hole formed in an insulating film in order to connect a substrate or an electrode to an upper wiring layer.
In the case of the present embodiment, a conductive ink or conductive paste and a contact spacer 12 are embedded in the contact hole, and the conductive ink or conductive paste is dried or sintered to form the joining member 20. To make contact between the drain electrode 5 and the anode electrode of the second substrate.

  Further, as shown in FIG. 1, the second substrate 8 has an anode electrode 9 formed on one main surface, and an electrode separator 11 for partitioning each light emitting portion formed on the anode electrode 9. The light emitting unit 10 is formed in each region partitioned by the separator 11. The light emitting unit 10 includes at least a light emitting layer and a cathode. The light emitting unit 10 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like. The anode electrode 9 and the light emitting unit 10 are collectively referred to as a light emitting element. A light-emitting element is one embodiment of a display element.

Then, a contact spacer 12 is formed on the anode electrode 9 between the electrode separators 11 surrounding the adjacent light emitting units 10. For example, the contact spacer 12 is formed by forming a metal film on the surface of a columnar insulating structure, and electrically connects the drain electrode 5 and the anode electrode 9 of the thin film transistor, and the first substrate 1 and the second substrate. 8 is maintained at a predetermined interval.
The contact spacer used in the present invention is formed of an insulating resin convexly processed into a columnar shape at a predetermined height and a conductive material covering the surface. The electrode of the second substrate 8 is exposed at the root of the contact spacer, and the electrode of the second substrate 8 and the conductive layer on the surface of the contact spacer are simultaneously connected when forming a conductive material covering the surface of the contact spacer. The
The contact spacer is preferably a structure having a trapezoidal cross section along the longitudinal direction, such as 12 in FIG. 4D.
The insulating structure refers to a three-dimensional structure formed using an insulating resin. The method for forming the structure is not limited, and for example, a plateless printing method, a plate printing method, imprint lithography, nanoimprint lithography, photolithography and the like can be used. Preferably, the structure is formed by photolithography.

The electrical connection between the drain electrode 5 and the anode electrode 9 is realized, for example, by electrically connecting the metal film formed on the surface of the contact spacer 12 and the anode electrode 9. The metal film formed on the surface of the contact spacer 12 may be continuously formed on the surface of the anode electrode 9. Here, the drain electrode 5 and the contact spacer 12 are connected via the connection member 20. It is preferable that the side surface of the contact hole 14 is further covered with a conductive film connected to the drain electrode 5, but this is not necessarily the case. The joining member 20 is made of a material formed by solidifying conductive ink or conductive paste by drying or sintering. By passing the joining member 20, reliable conduction can be realized.
Here, the joining member refers to a member for electrically and mechanically joining the electrodes of substrates and components separately produced. In general, an anisotropic conductive adhesive (ACF) or an anisotropic conductive adhesive (ACA) is used as a joining member. In the present invention, anisotropic conductive adhesive (ACA) is used. Without using an adhesive film or an anisotropic conductive adhesive, it can be formed using the conductive ink or conductive paste exemplified as the precursor of the joining member. The best mode is to use conductive ink in which fine metal particles are dispersed, and if conductive ink in which fine metal particles are dispersed is used, the joint can be metal-bonded, resulting in highly reliable bonding. it can.

  The first substrate 1 and the second substrate 8 configured as described above are fixed by the conductive bonding member 20 with the tip of the contact spacer 12 inserted into the contact hole 14.

Hereinafter, a method for manufacturing the active matrix display device of Embodiment 1 will be described.
FIG. 2 is a process diagram illustrating a manufacturing flow of the active matrix display device according to the first embodiment.
In the first embodiment, the first substrate 1 on which the light emission controlling active matrix circuit including the thin film transistor is formed is manufactured through steps DS1 to DS6, and the second substrate 8 on which the light emitting unit 10 is formed is formed in steps LS1 to LS5. It is produced through the process. An active matrix display device is manufactured by bonding the first substrate 1 on which the active matrix circuit for light emission control is formed and the second substrate 8 on which the light emitting unit 10 is formed through steps BS1 to BS3.
Hereinafter, each step will be described in detail.

1. Thin film transistor formation (light emission control circuit formation)
<Step DS1>
Step DS1 is a process of cleaning the first substrate 1 (FIG. 3A).
The first substrate 1 can be a substrate made of various materials such as resin, glass, metal, metal foil, and may be a flexible resin substrate. The 2nd board | substrate 8 should just have translucency, and the 1st board | substrate 1 may be transparent or opaque.
Further, the cleaning can be appropriately performed by a general method according to the material of the substrate.
Further, a planarization film, an adhesive film, a barrier film, or a film having a plurality of these functions may be formed on the first substrate 1, and the film may be an inorganic film or an organic film. . In addition, a laminated film in which an inorganic film and an organic film are combined may be formed, and can be appropriately selected in accordance with the material of the first substrate and the function to be performed by the organic film or inorganic film formed on the substrate.
Furthermore, the inorganic film may be formed by a coating method from a liquid containing a sol-gel or a precursor, or by a PVD method such as a CVD method or a sputtering method including an atomic layer deposition (ALD) method. May be. Examples of the material for the inorganic film include oxides and nitrides such as SiOx, SiNx, SiOxNy, and Al ₂ O ₃ .
The organic film can be formed by a CVD method or a PVD method, and may be formed by coating and baking a polymer compound or the like. The material for the organic film is selected according to the purpose, and examples thereof include parylene, epoxy resin, PS resin, PVP resin, and PMMA resin.

<Step DS2>
Step DS2 is a step of forming a metal layer including the gate electrode layer 2 (FIG. 3B).
In addition to the gate electrode layer 2, the metal layer includes electrodes, wirings, external connection terminals, and the like of passive elements constituting the active matrix circuit for light emission control.
In this step, for example, a metal film is formed on the first substrate 1 by a PVD method such as a sputtering method or a vacuum evaporation method, or a method in which a conductive ink is applied on the first substrate 1. Then, patterning is performed in a predetermined shape.
The material selected as the metal film is not particularly limited, but metals such as Au, Ag, Cu, Mo, W, Ti, Al, Pd, Pt, and Ta, alloys of these metals, and these metals A material having high conductivity is preferable.
Further, a predetermined pattern may be directly formed by a plated or non-plate printing method.
As the material to be applied or printed, various conductive inks can be used, but an ink (liquid) containing a highly conductive material is preferable, for example, polyethylene dioxythiophene (PEDOT) / polystyrene sulfonic acid (PSS), etc. Ink containing conductive polymer compound, nano-Au, nano-Ag, nano-Cu, nano-Pd, nano-Pt, nano-Ni, nano-ITO, nano-in which nanoparticles of inorganic material are dispersed Examples thereof include fine particle dispersion inks such as Al, nano-silver sulfide, and nano-silver oxide, and metal compound inks such as silver salts. In the fine particle dispersed ink containing nano-silver oxide, a reducing agent may be mixed and used.
In addition, a metal is placed in a predetermined position by electroless plating or a combination of electroless plating and electrolytic plating on a substrate in which an active layer is patterned directly in advance by a photolithography method, a plate or plateless printing method. A film may be formed.
The film thickness of the gate electrode 2 is not particularly limited, but is preferably 50 nm to 1 μm, and more preferably 50 nm to 300 nm.
Here, the plate printing method refers to all printing methods using a printing plate, for example, flexographic printing (letter printing) method, gravure printing (intaglio printing) method, screen printing (stencil printing) method, offset (reversal) printing method. , Micro contact printing method, nanoimprint method and the like. The plateless printing method refers to all printing methods that do not use a printing plate, and examples thereof include an inkjet printing method, a nozzle coating method, and a slit coating method.

<Step DS3>
Step DS3 is a step of forming the gate insulating film 3 (FIG. 3C).
The gate insulating film 3 is preferably formed by forming an organic insulating film using a polymer compound material. Examples of the polymer compound material include PS resin, PVP resin, PMMA resin, fluorine-containing resin, and PI resin. , PC resins, PVA resins, and copolymers containing a plurality of types of repeating units contained in these resins. More preferably, it is a copolymer having crosslinkability, which is excellent in process resistance such as solvent resistance and stability. In this step, after a film is formed by spin coating, a predetermined pattern may be formed by photolithography, or direct patterning may be performed by plate printing or non-plate printing.
When a predetermined pattern is formed by a photolithography method, it is preferable to use a copolymer containing a plurality of types of repeating units contained in the resin imparted with photosensitivity as the polymer compound material.
The thickness of the gate insulating film 3 is not particularly limited, but is preferably 10 nm to 1 μm, and more preferably 100 nm to 600 nm.
The solvent used when the gate insulating film 3 is formed by a coating method or a printing method damages the first substrate 1 and the planarizing film, adhesive film, barrier film, etc. formed on the first substrate 1. It is preferable that the orthogonal solvent for the first substrate 1 and the film is not given.

<Step DS4>
Step DS4 is a step of forming a metal layer including the source electrode 4 and the drain electrode 5 (FIG. 3D). In addition to the source electrode 4 and the drain electrode 5, the metal layer includes, for example, electrodes and wirings of passive elements that constitute an active matrix circuit for light emission control. In the present invention, the first electrode is the source electrode 4 or the drain electrode 5.
As a method for forming the metal film, for example, a technique that does not damage the gate insulating film 3 made of an organic insulating film is preferable. Alternatively, the metal layer may be formed after previously forming a protective layer such as a damage mitigating layer for protecting the organic insulating film from process damage. This protective layer may be left on the organic insulating film where there is no metal layer, or may be removed.
As a method for forming the predetermined pattern, for example, a PVD method such as a sputtering method or a vacuum deposition method, or a method of applying a conductive ink on the gate insulating film 3, a metal film is formed on the gate insulating film 3. Then, a method of forming a pattern with a predetermined shape by patterning by a photolithography method is exemplified. Examples of the material for the metal film include metals such as Au, Ag, Cu, Mo, W, Ti, Al, Pd, Pt, and Ta, alloys containing these metals, and compounds containing these metals. High materials are preferred.
Further, a predetermined pattern may be directly formed by a plated or non-plate printing method.
As the material to be applied or printed, various conductive inks can be used, but an ink containing a material having high conductivity is preferable. For example, an ink containing a conductive polymer compound such as PEDOT / PSS, a nano-sized inorganic material, and the like. Fine particle dispersion of nano-Au, nano-Ag, nano-Cu, nano-Pd, nano-Pt, nano-Ni, nano-ITO, nano-Al, nano-silver sulfide, nano-silver oxide, etc. with dispersed particles Examples thereof include metal compound inks such as ink and silver salt. In the fine particle dispersed ink containing nano-silver oxide, a reducing agent may be mixed and used.
Further, the metal film may be formed at a predetermined position by an electroless plating method or a method in which electroless plating and an electrolytic plating method are combined.
The film thicknesses of the source electrode 4 and the drain electrode 5 are not particularly limited, but are preferably 50 nm to 1 μm, and more preferably 100 nm to 600 nm.
The solvent used when the source electrode 4 and the drain electrode 5 are formed by a coating method or a printing method does not damage the first substrate 1 and the gate insulating film 3, and does not damage the first substrate 1 and the gate insulating film 3. An orthogonal solvent is preferred.

<Step DS5>
Step DS5 is a process of forming the semiconductor layer 6 (FIG. 3E).
Also in this step, as in step DS4, for example, a film forming method that does not damage the gate insulating film 3 made of an organic insulating film is preferable.
For example, the semiconductor layer 6 may be formed only in a desired region using a vacuum vapor deposition method from above a mask such as a metal mask, or a film is formed over the gate insulating film, the source electrode, and the drain electrode. Thereafter, patterning may be performed into a predetermined shape by a photolithography method. Alternatively, a resin film having a tapered opening in a desired region and functioning also as a separator may be formed, and then a semiconductor layer may be formed on one surface by a vacuum evaporation method. Here, the tapered opening means an opening that expands downward (on the side closer to the substrate) when the cross section is viewed.
Furthermore, a predetermined pattern may be directly formed by a coating method by a plated or non-plate printing method.
As a material to be printed, a dispersion ink of an inorganic semiconductor material or an ink containing an organic semiconductor material such as a low molecular compound or a high molecular compound can be used, but an ink containing a high molecular organic semiconductor material is preferable. In addition, after the semiconductor film is formed by a coating method, a baking treatment may be appropriately performed in order to control the morphology of the semiconductor film or to volatilize the solvent. The thickness of the semiconductor layer 6 is not particularly limited as long as it does not affect the semiconductor characteristics, but is preferably 15 nm to 150 nm, and more preferably 15 nm to 80 nm.
The solvent used when the semiconductor layer 6 is formed by a coating method or a printing method does not damage the substrate 1, the gate insulating film 3, the source electrode 4, and the drain electrode 5. It is preferable that the solvent be orthogonal to the source electrode 4 and the drain electrode 5.
Examples of the dispersion ink of the inorganic semiconductor material include a dispersion ink of an oxide semiconductor such as ZnO, IGZO, ZTO, ITO, and IZO, a sol-gel liquid, and a liquid containing nanoparticles of an inorganic semiconductor material such as Si.
Examples of organic semiconductor materials include low molecular compounds that can be formed by vapor deposition of pentacene, copper phthalocyanine, and the like, 6,13-bis (triisopropylsilylethynyl) pentacene (6,13-bis (triisopropylsilylethynyl) pentacene (Tips- Pentacene)), 13,6-N-sulfinylacetamidopentacene (NSFAAP), 6,13-dihydro-6,13-methanopentacene-15-one (6,13-Dihydro-6) , 13-methanopentacene-15-one (DMP)), Pentacene-N-sulfinyl-n-butylcarbamate adduct, Pentacene-N-sulfinyl-tert-butylcarbamate adduct Pentacene precursors such as (Pentacene-N-sulfinyl-tert-butylcarbamate), [1] benzothieno [3,2-b] benzothiophene ([1] Benzothieno [3,2-b] benzothiophene (BTBT)), porphyrin, Benzo Luffyline, low molecular compounds or oligomers such as oligothiophene having an alkyl group as a soluble group, polythiophene such as poly (3-hexylthiophene) (P3HT), fluorene copolymer (for example, having a fluorenediyl group and a thiophene diyl group) Polymer compounds) and the like.

<Step DS6>
Step DS6 is a process of forming the protective film 7 and forming the contact hole 14 (FIG. 3F).
Here, a film forming technique that does not damage the semiconductor layer 6 is preferable.
For example, after forming the protective film 7 over the gate insulating film, the source electrode, the drain electrode, and the semiconductor layer by using a coating method such as a vacuum deposition method, an ALD method, or a spin coating method, a predetermined shape is formed by a photolithography method. The contact hole 14 is formed so that the drain electrode 5 is exposed.
Alternatively, a predetermined pattern may be formed directly by a plated or non-plate printing method, excluding the region where the drain electrode 5 is exposed.
As a material to be printed, various materials such as an inorganic material dispersed ink, a sol-gel material, a low molecular compound, an ink including an organic material such as a high molecular compound can be selected, and an ink including a high molecular material is preferable.
Examples of the material include an inorganic material and an organic SOG (spin-on-glass) material, and examples of the low-molecular compound include parylene. Examples of the polymer compound include PS resin, PVP resin, PMMA resin, fluorine-containing resin, PI resin, PC resin, PVA resin, and a copolymer including a plurality of types of repeating units contained in these resins. A preferred polymer compound is a copolymer having crosslinkability, which is excellent in process resistance such as solvent resistance and stability. When a predetermined pattern is formed by photolithography, it is preferable to use a copolymer containing a plurality of types of repeating units contained in the resin imparted with photosensitivity.
Although there is no restriction | limiting in particular in the film thickness of the protective film 7, Preferably, they are 50 nm-5 micrometers, More preferably, they are 500 nm-1.5 micrometers.
A conductive film connected to the first electrode (drain electrode) or the lower electrode is preferably formed on the side surface of the contact hole.
The solvent used when forming the protective film 7 by a coating method or a printing method does not damage the first substrate 1, the gate insulating film 3, the source electrode 4, the drain electrode 5, and the semiconductor layer 6. It is preferably an orthogonal solvent for one substrate 1, gate insulating film 3, source electrode 4, drain electrode 5, and semiconductor layer 6.

2. Formation of display element (light emitting element) on second substrate 8 <Step LS1>
Step LS1 is a process of cleaning the second substrate 8 (FIG. 4A).
There is no restriction | limiting in particular as the 2nd board | substrate 8, For example, a glass, a flexible resin board | substrate, etc. are applicable, However, The board | substrate with the high barrier property with respect to water vapor | steam and high gas barrier property is desirable.
Further, the cleaning can be appropriately performed by a general method according to the material of the substrate.
Further, a planarization film, an adhesive film, a barrier film, or a film having a plurality of these functions may be formed on the second substrate 8, and the film may be an inorganic film or an organic film. . In addition, a laminated film in which an inorganic film and an organic film are combined may be formed, and can be appropriately selected according to the material of the second substrate and the function to be performed by the organic film or the inorganic film formed on the substrate.
Furthermore, the inorganic film may be formed by a coating method from a liquid containing a sol-gel or a precursor, or may be formed by a PVD method such as a CVD method or a sputtering method including an ALD method. Examples of the material for the inorganic film include oxides and nitrides such as SiOx, SiNx, SiOxNy, and Al ₂ O ₃ .
The organic film can be formed by a CVD method or a PVD method, and may be formed by applying and baking an ink containing a polymer compound. The material for the organic film is selected according to the purpose, and examples thereof include parylene, epoxy resin, PS resin, PVP resin, and PMMA resin.

<Step LS2>
Step LS2 is a step of forming a conductive layer including the anode electrode 9 (FIG. 4B).
Here, an example in which a transparent or translucent conductive layer is formed as the conductive layer for the anode electrode 9 will be described.
In this step, for example, a conductive film is formed on the second substrate 8 by a PVD method such as a sputtering method or a vacuum evaporation method, and then a pattern having a predetermined shape is formed by patterning using a photolithography method. Can do.
As the conductive film, for example, a conductive film made of a metal oxide material such as ITO, IZO, ZTO, ZnO, or IGZO can be selected, and a conductive film made of a material having high visible light transmittance and high conductivity is preferable.
A predetermined pattern may be directly formed by a plated or non-plate printing method.
As the transparent conductive material to be printed, ink containing a conductive polymer such as PEDOT / PSS, fine particle dispersed ink such as nano-ITO in which nanoparticles of inorganic material are dispersed, and the like can be used. Further, other transparent conductive inks can be used without any particular limitation, but inks containing materials with high visible light transmittance and high conductivity are preferable.
For the anode electrode 9, a fine particle dispersion ink such as nano-Au, nano-Ag, nano-Cu, nano-silver oxide, or a metal compound ink such as silver salt is formed on a substrate so as to have a film thickness capable of transmitting light. It is also possible to use an anode electrode formed by printing on top, or an anode electrode patterned on a mesh structure. Further, an anode electrode obtained by laminating the transparent conductive material on these metal electrodes and an anode electrode combined with a flattening electrode for flattening the steps of the mesh structure can be used. In the fine particle dispersed ink containing nano-silver oxide, a reducing agent may be mixed and used.

<Step LS3>
Step LS3 is a step of forming the electrode separator 11 on the anode electrode 9 (FIG. 4C).
As a structural material constituting the electrode separator 11, for example, a material that can process a patterned cross section into a reverse taper shape, such as ZPN2464 (manufactured by ZEON), and has a high electrical insulation property may be used. it can. A material that can be subjected to photo-patterning, such as ZPN2464, and preferably does not release a gas that adversely affects the electrode or the organic light emitting layer after curing. The electrode separator 11 may be subjected to water repellent treatment. Although the thickness of the electrode separator 11 is not specifically limited, For example, 0.5 micrometers or more and 4.0 micrometers or less are desirable.
Before forming the reverse-tapered electrode separator 11, a base layer may be appropriately formed thereunder. The underlayer can be made of an inorganic material such as SiOx, SiOxNy, or SiNx, or an inorganic or organic material having high electrical insulation, but the inorganic material has higher electrical insulation and can lower the height of the underlayer. preferable. The thickness of the underlayer is not particularly limited as long as electrical insulation is maintained, but is set to, for example, 10 nm or more and 500 nm or less.

<Step LS4>
Step LS4 is a step of forming the contact spacer 12 on the anode electrode 9 (FIG. 4D).
As the structural material constituting the insulating structure of the contact spacer 12, for example, a material that can be processed into a forward tapered shape and that has high electrical insulation and can be made thick can be used. A material that can be photo-patterned and does not release a gas that adversely affects the electrode or the organic light emitting layer after curing is preferable. Specifically, Toray's photo nice (photosensitive polyimide) is used. The height of the contact spacer 12 may be longer than the sum of the thickness of the electrode separator 11 and the depth of the contact hole 14 provided on the drain electrode 5 of the substrate 1, and preferably the thickness of the electrode separator 11 and the contact hole It is set to be 1.5 times or more, more preferably 2 times or more longer than the sum of 14 depths.
The shape of the insulating structure is preferably a column shape. In addition, a conductive film is formed on the surface of the insulating structure to connect the anode electrode 9 and the drain electrode 5.
This conductive film is simultaneously formed in the step of depositing the cathode electrode (cathode) included in the light emitting unit 10. At this time, the insulation between the cathode electrode and the anode electrode 9 of the light emitting unit 10 is maintained by the electrode separator 11.

<Step LS5>
Step LS5 is a step of forming the organic EL element by providing the light emitting unit 10 on the anode electrode 9 in the region partitioned by the electrode separator 11 (FIG. 4E).
The organic EL element is configured, for example, by forming a cathode electrode on the anode electrode 9 via a light emitting layer, and various functional layers are formed between the anode electrode 9 or the cathode electrode and the light emitting layer. There is also.
A specific element structure will be described later.

3. Bonding process <Step BS1>
Step BS1 is a step of transferring and printing conductive ink such as nanoparticle Ag or Ag paste or conductive paste on the tip of the contact spacer 12 (FIG. 5A).
Here, a transfer printing plate 30 coated with a joining member precursor layer 20a made of nanoparticle Ag ink or Ag paste is prepared, and the tip of the contact spacer 12 of the second substrate 8 is formed on the joining member precursor layer 20a. Is pressed to apply the joining member precursor layer 20b to the tip (transfer printing).
In addition, the present invention is not limited to the transfer printing method, and nanoparticle Ag ink, for example, may be applied directly to the contact hole 14 of the first substrate 1 by an ink jet method or a drop cast method.
As other coating methods, plate printing methods such as a micro contact printing method, a screen printing method, and a relief printing method can be applied. By these methods, a joining member precursor such as a conductive ink or a conductive paste is contact hole. 14 is filled.
The conductive ink preferably contains a liquid medium and inorganic nanoparticles dispersed in the liquid medium. The inorganic nanoparticles preferably include at least one selected from the group consisting of Au, Ag, Cu, Pd, Pt, Ni, ITO, Al, silver sulfide, and silver oxide.
The conductive paste may include at least one material selected from the group consisting of a PbSn alloy, a SnAg alloy, and Ag, and may include a polymer.

<Step BS2>
Step BS2 is a process of bonding the substrates together (FIG. 5B).
Here, the first substrate 1 and the second substrate 8 are aligned using the alignable bonding apparatus so that the tip of the contact spacer 12 faces the contact hole 14, and the tip of the contact spacer 12 is moved. It inserts in the contact hole 14, and solidifies the joining member precursor 20b. The alignment accuracy is desirably ± 5 μm or less.
As described above, the first substrate 1 and the second substrate 8 are bonded together, and the first electrode and the lower electrode 9 are electrically connected.
The solidification method of the joining member precursor 20b is appropriately selected according to the kind of the joining member precursor selected, and is solidified by drying or sintering, for example. When heating is involved, the heating temperature is 150 ° C. or less. It is preferable that
Sintering in the case of this example is, for example, a case where silver nanoparticles containing a dispersant are used as a joining member precursor, and when the desorption temperature or decomposition temperature of the dispersant is equal to or higher than room temperature, the desorption temperature Alternatively, it means firing at a temperature higher than the decomposition temperature, desorbing or decomposing the dispersant, bringing silver nanoparticles directly into contact with each other, and solidifying. Since the surfaces of the nanoparticles are very active, the silver nanoparticles are melted by direct contact with each other and aggregate to form a metal film and solidify.
For example, when using an adhesive conductive paste as a bonding member precursor, drying refers to bringing silver particles contained as a conductive filler into contact with each other and solidifying them by evaporating the dispersion solvent in the adhesive conductive paste. . Alternatively, when silver nanoparticles containing a dispersant are used as a joining member precursor and the dispersant can be desorbed or decomposed at room temperature, the dispersion solvent is evaporated over time, and the dispersant is desorbed or By decomposing, it means that the silver nanoparticles melt and aggregate to form a metal film and solidify.

<Step BS3>
Step BS3 is a process of forming and sealing the sealant layer 13.
The sealant layer 13 may be filled in the entire inside of the substrate, or may be applied only to the outer peripheral portion of the substrate having the smaller outer shape among the bonded substrates. When the substrate is a flexible resin substrate, it is desirable that the entire surface of the substrate is filled and cured and sealed. The material of the sealant layer is not particularly limited, but a material that does not affect the TFT substrate or the organic EL layer is preferable. For example, an epoxy resin-based sealing material is used.

  As described above, the active matrix display device of Embodiment 1 in which the tip of the contact spacer 12 is fixed by the contact hole 14 is manufactured.

Next, a light emitting element in the active matrix display device of Embodiment 1 will be described.
First, an organic EL element can be given as a typical example of a light emitting element.

<Organic EL device>
The organic EL element includes an anode (anode electrode), a cathode (cathode electrode), and a light emitting layer provided therebetween as a basic configuration. Specific examples of the organic EL element include the following a ) To d).
a) Anode / light emitting layer / cathode b) Anode / hole transport layer / light emitting layer / cathode c) Anode / light emitting layer / electron transport layer / cathode d) Anode / hole transport layer / light emitting layer / electron transport layer / cathode (Here, / indicates that each layer is laminated adjacently. The same applies hereinafter.)

  Note that the light emitting layer is a layer having a function of emitting light, the hole transporting layer is a layer having a function of transporting holes, and the electron transporting layer is a layer having a function of transporting electrons. is there. The hole transport layer and the electron transport layer are collectively referred to as a charge transport layer. In addition, the hole transport layer adjacent to the light emitting layer may be referred to as an interlayer layer.

  Examples of the material and manufacturing method of the anode include the material and manufacturing method of the anode electrode 9 described above. The thickness of the anode can be appropriately selected in consideration of light transmittance and electric conductivity, but is usually 10 nm to 10 μm, preferably 20 nm to 1 μm, more preferably 50 nm to 500 nm. It is.

  As a material for the cathode, a material having a small work function is preferable, lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, Metals such as europium, terbium, ytterbium, and two or more of them, or one or more of them, and one of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, tin An alloy with a seed or more, graphite, a graphite intercalation compound, or the like is used.

  As a method for producing the cathode, a vacuum deposition method, a sputtering method, a laminating method in which a metal thin film is thermocompression bonded, or the like is used.

  The thickness of the cathode can be appropriately selected in consideration of electric conductivity and durability, but is usually 10 nm to 10 μm, preferably 20 nm to 1 μm, and more preferably 50 nm to 500 nm.

  The light-emitting material contained in the light-emitting layer includes distyrylarylene derivatives, oxadiazole derivatives, quinacridone derivatives, coumarin derivatives, compounds containing thiophene rings, polymers of these compounds, polyvinylcarbazole derivatives, polyparaphenylene derivatives, poly Examples include fluorene derivatives and polyparaphenylene vinylene derivatives.

  As the hole transport material contained in the hole transport layer, polyvinylcarbazole and derivatives thereof, polysilane and derivatives thereof, polysiloxane derivatives having aromatic amines in the side chain or main chain, pyrazoline derivatives, arylamine derivatives, stilbene derivatives, Examples thereof include triphenyldiamine derivatives, polyaniline and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof, poly (p-phenylene vinylene) and derivatives thereof, poly (2,5-thienylene vinylene) and derivatives thereof, and the like.

  As the electron transport material contained in the electron transport layer, oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyanoanthraquinodimethane and its derivatives, Examples include fluorenone derivatives, diphenyldicyanoethylene and derivatives thereof, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and derivatives thereof, polyquinoline and derivatives thereof, polyquinoxaline and derivatives thereof, polyfluorene and derivatives thereof, and the like.

  The light emitting layer, the hole transport layer, and the electron transport layer can be stacked and formed from a solution. For lamination and film formation from solution, spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, slit coating method, capillary coating method Application methods such as spray coating, screen printing, flexographic printing, offset printing, inkjet printing, and nozzle coating can be used. In addition, when the electron transport material is a low molecular compound, the film can be formed by a vacuum deposition method.

  The film thickness of the light emitting layer may be selected so that the driving voltage and the light emission efficiency are moderate values, but is usually 1 nm to 1 μm, preferably 2 nm to 500 nm, more preferably 5 nm to 200 nm. .

  The film thickness of the hole transport layer may be selected so that the drive voltage and the light emission efficiency are appropriate values, but at least a thickness that does not cause pinholes is required. Is undesirably high. Therefore, the thickness of the hole transport layer is usually 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.

  The film thickness of the electron transport layer may be selected so that the drive voltage and the light emission efficiency have appropriate values, but at least a thickness that does not cause pinholes is necessary. It becomes high and is not preferable. Therefore, the film thickness of the electron transport layer is usually 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.

  Further, among the charge transport layers provided adjacent to the electrodes, those having a function of improving the charge injection efficiency from the electrodes and having the effect of lowering the driving voltage of the element are particularly charge injection layers (hole injection layers). , Sometimes referred to as an electron injection layer). Further, in order to improve the adhesion with the electrode and the charge injection from the electrode, the charge injection layer or the insulating layer may be provided adjacent to the electrode. Therefore, a thin buffer layer may be inserted at the interface between the charge transport layer and the light emitting layer. Note that the order and number of layers to be stacked, and the thickness of each layer may be appropriately selected in consideration of light emission efficiency and element lifetime.

Examples of the light emitting element provided with the charge injection layer include those having the following structures e) to p).
e) Anode / charge injection layer / light emitting layer / cathode f) Anode / light emitting layer / charge injection layer / cathode g) Anode / charge injection layer / light emitting layer / charge injection layer / cathode h) Anode / charge injection layer / hole Transport layer / light emitting layer / cathode i) anode / hole transport layer / light emitting layer / charge injection layer / cathode j) anode / charge injection layer / hole transport layer / light emitting layer / charge injection layer / cathode k) anode / charge Injection layer / light emitting layer / charge transport layer / cathode l) anode / light emitting layer / electron transport layer / charge injection layer / cathode m) anode / charge injection layer / light emitting layer / electron transport layer / charge injection layer / cathode n) anode / Charge injection layer / hole transport layer / light emitting layer / charge transport layer / cathode o) anode / hole transport layer / light emitting layer / electron transport layer / charge injection layer / cathode p) anode / charge injection layer / hole transport Layer / light emitting layer / electron transport layer / charge injection layer / cathode

  The charge injection layer is provided between the anode and the hole transport layer, and includes a layer including a material having an ionization potential of an intermediate value between the anode material and the hole transport material included in the hole transport layer, the cathode, Examples thereof include a layer including a material provided between the electron transport layer and having an electron affinity with an intermediate value between the cathode material and the electron transport material included in the electron transport layer.

The material used for the charge injection layer may be appropriately selected in relation to the material of the electrode and the adjacent layer. Polyaniline and derivatives thereof, polyfluorene and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof, polyphenylene vinylene and Derivatives thereof, polythienylene vinylene and derivatives thereof, polyquinoline and derivatives thereof, polyquinoxaline and derivatives thereof, conductive polymers such as polymers having an aromatic amine structure in the main chain or side chain, metal phthalocyanines such as copper phthalocyanine, Carbon etc. are mentioned.
The charge injection layer can be laminated and formed from a solution.
The film thickness of the charge injection layer is, for example, 1 to 100 nm, and preferably 2 to 50 nm.

As described above, the organic EL element has been described as a representative example of the light emitting element of the active matrix display device according to the present invention. However, the present invention is not limited to this, and instead of the second substrate 8 on which the light emitting element is formed. (1) Electronic paper display element by microcapsule method, electronic powder fluid method, electrophoretic method, electrowetting method, chemical change method,
(2) a liquid crystal display element filled with liquid crystal,
A substrate on which is formed can also be bonded. In this case, by forming a contact spacer at the position of the contact hole 14 of the first substrate 1, it is possible to bond the first substrate 1 to the second substrate 8 on which the display element is formed and to drive the display element. Become.

  In the active matrix display device according to the present invention, the first substrate 1 and the second substrate 8 are made of a transparent or translucent resin depending on the type of thin film transistor and display element to be formed and the use of the display device. It can be selected from various substrates and combinations, such as rigid substrates or film substrates, and combinations thereof with metal foil substrates.

  Furthermore, as the material of the resin substrate, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyimide (PI), polyethersulfone (PES), polyetherimide (PEI), polyphenylene sulfide (PPS) ), Wholly aromatic polyamide (also known as aramid), polyphenylene ether (PPE), polyarylate (PAR), polybutylene terephthalate (PBT), polyoxymethylene (POM, also known as polyacetal), polyetheretherketone (PEEK), A liquid crystal polymer (LCP) or the like can be selected.

  In the active matrix display device according to the first embodiment of the present invention configured as described above, the first substrate 1 and the second substrate 8 are securely fixed, and the anode electrode 9 and the drain electrode 5 are highly reliable. It becomes possible to connect with certainty.

In addition, since the contact hole 14 can be connected by being filled with a connection member, it is possible to connect using low-viscosity ink, and for example, nanoparticles Ag can be used.
Hereinafter, an embodiment according to the present invention which is different from the first embodiment will be described.

Embodiment 2. FIG.
FIG. 6 is a cross-sectional view schematically showing the configuration of the active matrix display device according to the second embodiment of the present invention.
The active matrix display device according to the second embodiment of the present invention includes:
(1) A contact spacer 12a is provided on the drain electrode 5 of the first substrate 1, and a conductive film is formed on the contact spacer 12a and the drain electrode 5,
(2) A contact hole 14a is provided between the electrode separators 11 surrounding the light emitting portions 10 of the adjacent light emitting elements of the second substrate 8 so that the lower electrode 9 is exposed on the bottom surface.
(3) The point that the tip of the contact spacer 12a is embedded and fixed in the bonding member 20 filled in the contact hole 14a is different from the first embodiment, and other parts are the same as in the first embodiment. Composed.
The active matrix display device according to the second embodiment configured as described above has the same functions and effects as those of the first embodiment.

Embodiment 3. FIG.
FIG. 7 is a cross-sectional view schematically showing the configuration of the active matrix display device according to Embodiment 3 of the present invention.
The active matrix display device according to the third embodiment of the present invention is different from the first embodiment in the configuration of the thin film transistor formed on the first substrate 1.
Specifically, first, the source electrode 4 and the drain electrode 5 are formed on the first substrate 1 at a predetermined interval, and the semiconductor layer 6 straddles the source electrode 4 and the drain electrode 5 so as to fill the interval. Formed. Then, the gate insulating film 3 is formed so as to cover the semiconductor layer 6, the gate electrode 2 is formed so as to face the semiconductor layer 6, and the protective film 7 is formed so as to cover the gate electrode 2. .
In the third embodiment, the contact hole 14b is formed so as to penetrate the protective film 7 and the gate insulating film 3, and the surface of the drain electrode 5 is exposed at the bottom surface of the contact hole 14b.
On the second substrate 8, light emitting elements, contact spacers 12, and the like are formed in the same manner as in the first embodiment, and in the same manner as in the first embodiment, the contact spacers 12 are connected to the bonding members 20 filled in the contact holes 14 b. The tip is embedded and fixed.
The active matrix display device according to the third embodiment configured as described above has the same functions and effects as those of the first embodiment.

Embodiment 4 FIG.
FIG. 8 is a cross-sectional view schematically showing a configuration of an active matrix display device according to Embodiment 4 of the present invention.
An active matrix type display device according to Embodiment 4 of the present invention includes:
(1) A contact spacer 12c is provided on the drain electrode 5 of the first substrate 1, and the processing shape of the protective film 7 has a reverse taper shape so as to serve as an electrode separator.
(2) A contact hole 14c is provided between the electrode separators 11 of the light emitting portions 10 of the adjacent light emitting elements on the second substrate 8,
(3) The point that the tip of the contact spacer 12c is embedded and fixed to the bonding member 20 filled in the contact hole 14c is different from the third embodiment, and other parts are the same as in the third embodiment. Composed.
The active matrix display device according to the fourth embodiment configured as described above has the same functions and effects as those of the first embodiment.

Embodiment 5. FIG.
FIG. 9 shows an active matrix display device according to the second embodiment of the present invention, in which an electrode separator 40 is further formed on the protective film 7 on the first substrate 1 side.
The other points of the active matrix display device according to the second embodiment of the present invention are the same as those of the second embodiment.
The active matrix display device according to the fifth embodiment configured as described above has the same functions and effects as those of the first embodiment.

  An embodiment according to the present invention will be described with reference to FIGS. 1, 3A to 3F, and 4A to 4E used in the first embodiment. The device configuration of this embodiment includes one light emitting element for one transistor. (Fig. 10)

In the following example, first, an organic thin film transistor Tr1 is formed on a first substrate 1 (FIG. 10A).
In FIG. 10A, 2t is a gate terminal, 4t is a source terminal, 5 is a drain electrode, 15d is a cathode lead wire, and 15t is a cathode terminal. Reference numeral 14 denotes a contact hole shown in FIGS. 1, 3A to F, and the like.
In FIG. 10B, 12 p is a contact spacer on the anode side of the light emitting unit 10, 12 n is a contact spacer on the cathode side of the light emitting unit 10, and 15 is a cathode electrode of the light emitting unit 10. Reference numeral 9 denotes the anode electrode shown in FIGS. 1, 4A to E, and the like.
The first substrate 1 and the second substrate 8 configured as described above are bonded together as described in FIGS. 5A and 5B. The positional relationship after bonding is shown in FIG.

<Example 1>
In Example 1, the display device shown in FIG. 10 having the cross-sectional structure shown in FIG. 1 was manufactured. On the first substrate 1 (glass), a gate electrode 2 (Cu), a gate insulating film 3 (organic insulating film), a source electrode 4 and a drain electrode 5 (both nano-Ag) are formed. A semiconductor layer 6 (polymer organic semiconductor) was formed between the drain electrodes 5, and an organic thin film transistor was manufactured by covering a region other than the region where the contact hole 14 was formed with a protective film 7 (organic insulating film). Also, ITO is deposited on the second substrate 8 (glass), by patterning the ITO film to form an anode electrode 9 (ITO), SiO ₂ which is provided only in the opening region for forming a light-emitting portion 10 A film was formed as a base layer, contact separator 12 (photosensitive polyimide manufactured by Toray Industries, Inc .: Photo Nice), and light-emitting portion 10 of the light-emitting element were formed to produce a display element that is a polymer EL element. Preparation of the electrode separator 11 was omitted, and after deposition of the cathode electrode film, the metal film on the outer peripheral portion of the exposed portion of the anode electrode 9 around the contact separator 12 on the anode electrode 9 was scraped to obtain an electrode separator. Next, nano-Ag ink (L-Ag1 manufactured by ULVAC MATERIAL Co., Ltd.) is drop-cast into the contact hole 12 of the first substrate 1 so that the contact spacer of the second substrate 8 fits in the contact hole 12 of the first substrate 1. And baked at 150 ° C. for about 30 minutes on a hot plate in the glove box. Next, the peripheral portion of the substrate was sealed with an epoxy resin to obtain an organic EL element driven by an organic transistor having a bonded structure.

Hereinafter, a method for manufacturing the display device of Example 1 will be described.
A Cu (copper) layer was formed on the cleaned first substrate 1 by sputtering, and the gate electrode 2 was formed by photolithography (FIG. 3B). In photolithography, the photoresist is “OFPR800C LB” manufactured by Tokyo Ohka Kogyo Co., Ltd., the developer is “NPD-18” manufactured by Nagase ChemteX, and the resist stripper is “104” manufactured by Tokyo Ohka Kogyo Co., Ltd. As the Cu etching solution, “mixed acid Cu-03” manufactured by Kanto Chemical Co., Inc. was used. Photolithography was performed by the following steps. A film of a photoresist “OFPR800C LB” was formed on the Cu layer, and irradiated with 365 nm UV light through a photomask. Next, the photoresist was developed using a developing solution “NPD-18”. Next, using the developed photoresist as a mask, the Cu exposed portion of the Cu layer is removed using a Cu etching solution “mixed acid Cu-03”, and the remaining photoresist is removed using a resist stripping solution “104”. Then, the gate electrode 2 was patterned.
At this time, the thickness of the gate electrode 2 was about 100 nm. Moreover, the resistivity of this copper electrode measured with the TEG element produced by the same process was about 4.2e- ⁶ Ωcm.

Next, a solution containing the polymer compound 1, the polymer compound 2, and 2-heptanone was applied onto the first substrate 1 and the gate electrode 2 by a spin coating method to form an organic layer (FIG. 3C). Since the organic layer contains a thermally crosslinkable material, a baking treatment was immediately performed to obtain the gate insulating film 3. The firing process is performed in a nitrogen (N ₂ ) flow heating furnace, and the first substrate 1 on which the gate electrode and the organic layer are formed in a state where the temperature in the furnace is room temperature in order to prevent adverse effects on thermal crosslinking due to rapid thermal stress. It put in the furnace and the heating of 60 minutes was implemented by the setting of the furnace temperature of 230 degreeC. The final baking temperature around the substrate at this time was between 220 ° C. and 227 ° C. The film thickness of the gate insulating film 3 was about 460 nm.

The polymer compound 1 and the polymer compound 2 which are organic insulating film materials are polystyrene copolymers produced by the following method.
(Synthesis of polymer compound 1)
Styrene (made by Wako Pure Chemical Industries) 2.06 g, 2,3,4,5,6-pentafluorostyrene (made by Aldrich) 2.43 g, 2- [O- [1′-methylpropylideneamino] carboxyamino] ethyl -Methacrylate (made by Showa Denko, trade name “Karenz MOI-BM”) 1.00 g, 2,2′-azobis (2-methylpropionitrile) 0.06 g, 2-heptanone (made by Wako Pure Chemical Industries) 14.06 g Is put in a 50 ml pressure vessel (made by ACE), bubbled with nitrogen, sealed, and polymerized in an oil bath at 60 ° C. for 48 hours to form a viscous 2-heptanone solution in which the polymer compound 1 is dissolved. Got. The polymer compound 1 has a repeating unit represented by the following chemical formula 1. Here, the number in parentheses indicates the mole fraction of the repeating unit.

高分子化合物１

Polymer compound 1

  The weight average molecular weight calculated | required from the standard polystyrene of the obtained high molecular compound 1 was 32800 (Shimadzu GPC, one "Tskel super HM-H" + one "Tskel super H2000", mobile phase = THF). .

(Synthesis of polymer compound 2)
4-aminostyrene (manufactured by Aldrich) 3.50 g, 2,3,4,5,6-pentafluorostyrene (manufactured by Aldrich) 13.32 g, 2,2′-azobis (2-methylpropionitrile) 0.08 g 25-36 g of 2-heptanone (manufactured by Wako Pure Chemical Industries, Ltd.) was placed in a 125 ml pressure vessel (manufactured by Ace), bubbled with nitrogen, sealed, and polymerized in an oil bath at 60 ° C. for 48 hours to obtain a polymer compound. A viscous 2-heptanone solution in which 2 was dissolved was obtained.
The polymer compound 2 has a repeating unit represented by the following chemical formula 2. Here, the number in parentheses indicates the mole fraction of the repeating unit.

高分子化合物２

Polymer compound 2

  The weight average molecular weight calculated | required from the standard polystyrene of the obtained high molecular compound 2 was 132000 (Shimadzu GPC, one "Tskel super HM-H" + one "Tskel super H2000", mobile phase = THF). .

Next, nano-Ag ink “L-Ag1T manufactured by ULVAC MATERIAL Co., Ltd.” is applied onto the gate insulating film 3 by a spin coating method, and the silver electrode layer is baked at 150 ° C. for 30 minutes in the air on a hot plate. Obtained. Thereafter, the silver electrode layer was processed into the shape of the source electrode 4 and the drain electrode 5 by photolithography. In photolithography, the photoresist is “OFPR800C LB” manufactured by Tokyo Ohka Kogyo Co., Ltd., the developer is “NPD-18” manufactured by Nagase ChemteX, and the resist stripper is “104” manufactured by Tokyo Ohka Kogyo Co., Ltd. As the Ag etching solution, “SEA-05” manufactured by Kanto Chemical Co., Inc. was used. Photolithography was performed by the following steps. A film of a photoresist “OFPR800C LB” was formed on the Ag layer, and irradiated with 365 nm UV light through a photomask. Next, the photoresist was developed using a developing solution “NPD-18”. Next, using the developed photoresist as a mask, the Ag exposed portion of the Ag layer is removed using an Ag etching solution “SEA-05”, and the remaining photoresist is removed using a resist stripping solution “104”. Peeling was performed, and finally a baking process at 220 ° C. for 30 minutes was performed on a hot plate in the atmosphere as a final baking process of the silver electrode that was a nano-Ag sintered body, and the source electrode 4 and the drain electrode 5 were patterned. (FIG. 3D). The film thickness of the source electrode 4 and the drain electrode 5 was about 200 nm. Moreover, the resistivity of this silver electrode measured with the TEG element produced by the same process was about 6 × 10 ⁻⁶ Ωcm.

  Next, a semiconductor layer 6 was formed between the source electrode 4 and the drain electrode 5 by a transfer printing method. The printing plate used for the transfer printing was prepared by mixing PDMS (polydimethylsiloxane) “SIM-360” manufactured by Shin-Etsu Chemical Co., Ltd. and the curing agent “CAT-360” at a ratio of 9: 1 (weight ratio) to a thickness of 0.7 mm. A lithographic plate made of a resin is produced using a jig so that the lithographic printing plate is cut from the lithographic plate to the size of the area where the semiconductor layer 6 is formed, and the printing flat plate is attached to a glass support substrate. That made a printing plate. An ink containing a polymer organic semiconductor prepared in advance on the printing plate is applied by spin coating to form a coating film, and the coating film is formed on the semiconductor layer 6 between the source electrode 4 and the drain electrode 5. The semiconductor layer 6 was obtained by transfer printing on the area for forming (FIG. 3E).

Next, a protective film 7 was formed on the first substrate 1 in a region other than the contact hole 12 and the terminal portion by a transfer printing method. A printing plate used for transfer printing was prepared in the same manner as for the semiconductor layer 6. On the printing plate, polymer compound 3 shown in the following chemical formula 3, fluoroethylene / vinyl ether alternating copolymer and 2,3,4,5,6-pentafluorotoluene (2,3,4,5,6-Pentafluorotoluene). ) Is applied by spin coating to form a coating film, and the coating film is transferred and printed in a region on the first substrate 1 other than the contact hole 12 and the terminal portion. Since the coating film has thermal crosslinkability, a protective film 7 was obtained by immediately baking at 200 ° C. for 30 minutes on a hot plate in a nitrogen (N ₂ ) atmosphere (FIG. 3F).

高分子化合物３

Polymer compound 3

Next, the glass substrate with the ITO film was washed, and the ITO film was patterned by a photolithography method to obtain the second substrate 8 on which the anode electrode 9 was formed (FIG. 4B). In photolithography, the photoresist is “OFPR800C LB” manufactured by Tokyo Ohka Kogyo Co., Ltd., the developer is “NPD-18” manufactured by Nagase ChemteX, and the resist stripper is “106” manufactured by Tokyo Ohka Kogyo Co., Ltd. As the ITO etching solution, “ITO etching solution: salt iron solution” manufactured by Hayashi Junyaku Kogyo Co., Ltd. was used. Photolithography was performed by the following steps. A film of photoresist “OFPR800C LB” was formed on the ITO film, and irradiated with 365 nm UV light through a photomask. Next, the photoresist was developed using a developing solution “NPD-18”. Next, using the developed photoresist as a mask, the exposed portion of the ITO film is removed using an ITO etching solution “salt iron solution”, and the remaining photoresist is removed using a resist stripping solution “106”. Then, the anode electrode 9 was patterned.
The thickness of the anode electrode 9 was about 150 nm, and the resistivity was about 120 × 10 ⁻⁶ Ωcm.

Next, an SiO ₂ layer having an opening only in a region where the light emitting portion 10 of the light emitting element is formed between the anode electrode 9 and the electrode separator 11 was formed as a base layer, and then a contact separator 12 was formed by photolithography. In photolithography, “Photo Nice” manufactured by Toray Industries, Inc. was used as the photosensitive resin used for the contact separator 12, and “NPD-18” manufactured by Nagase ChemteX Corporation was used as the developer. Photolithography was performed by the following steps. A film of “photo nice” which is a photosensitive resin was formed on the second substrate 8 on which the SiO ₂ layer was formed, and UV light of 365 nm was irradiated through a photomask. Next, the photoresist was developed using a developing solution “NPD-18”. Finally, a baking treatment at 230 ° C. for 30 minutes was performed in a heating furnace in the air atmosphere to obtain a contact separator 12. At this time, the height of the contact separator 12 was about 4 μm.
Preparation of the electrode separator 11 was omitted, and after the cathode metal film was deposited, the electrode film was separated by scraping off the metal film on the outer periphery of the exposed portion of the anode electrode 9 around the contact separator 12 on the anode electrode 9.

  Next, an organic light emitting layer was formed by a spin coating method and a baking treatment, and then a cathode electrode was vacuum-deposited to obtain a light emitting part 10 of the light emitting element. About the manufacturing process of the light emission part 10 of a light emitting element, it formed by the method similar to the method described in Embodiment 1. FIG. However, the organic light emitting layer material adhering to the exposed portion of the anode electrode 9 on and around the contact separator 12 was appropriately wiped off.

  Next, in order to bond the first substrate 1 and the second substrate 8, the contact hole 14 on the first substrate 1 was filled with nano-Ag ink using a drop cast method. As the nano-Ag ink, “L-Ag1T” manufactured by ULVAC Materials, Inc. was used. In the bonding procedure, the contact hole 14 on the first substrate 1 is filled with the nano-Ag ink “L-Ag1T” using a drop casting method, and the contact separator 12 on the second substrate 8 is placed on the first substrate 1. The first substrate 1 and the second substrate 8 were overlapped so as to fit in the contact hole 14. Then, it bonded by carrying out baking for 30 minutes at 150 degreeC, pressurizing and solidifying nano-Ag ink "L-Ag1T" by heating. All operations at this time were carried out in a glove box having an oxygen concentration of less than 1.0 ppm and a moisture concentration of less than 1.0 ppm.

  Finally, an epoxy resin was applied to the outer peripheral portion of the bonded substrates with the pressure in the glove box set to a negative pressure (about −2.0 Pa). Thereafter, the pressure in the glove box was returned to a positive pressure (about 5.0 Pa) and the epoxy resin was cured to obtain a display device driven by a polymer organic transistor.

  When the output (PVdd-Ipled) characteristics of the display element manufactured in this example were measured with “B1500A” semiconductor parameter analyzer manufactured by Agilent Technologies, the transistor characteristics of the display device including the light-emitting element were confirmed and the light emission of the organic light-emitting layer was observed. I was able to confirm. (FIG. 11). In FIG. 11, PVdd represents the voltage applied between the source electrode 4 and the cathode electrode of the organic thin film transistor. Ipled is the source electrode 4 of the organic thin film transistor 4, the semiconductor layer 6, the drain electrode 5, the contact hole 14, the contact separator 12 (anode side), the anode electrode 9, the light emitting part 10 of the light emitting element, the contact separator 12 (cathode side), the cathode. This represents the current flowing between the electrodes. In the display device manufactured in this example, the source electrode 4, the semiconductor layer 6, the drain electrode 5, the contact hole 14, the contact separator 12 (anode side), the anode electrode 9, the light emitting portion 10 of the light emitting element, the contact separator 12 (cathode) Side), conduction between the cathode electrodes was confirmed.

DESCRIPTION OF SYMBOLS 1 1st board | substrate 2 Gate electrode 2t Gate terminal 3 Gate insulating film 4 Source electrode 4t Source terminal 5 Drain electrode 6 Semiconductor 7 Protective film 8 2nd board | substrate 9 Anode electrode 10 Light emission part 11 Electrode separator 12 Contact spacer 13 Sealant layer 14 Contact hole 15 Cathode electrode 15d Cathode leader 15t Cathode terminal 20 Joining member

Claims (15)

A first substrate;
A thin film transistor having a gate electrode, a gate insulating film, a source electrode, a drain electrode, and a semiconductor film and formed on one main surface of the first substrate;
A second substrate;
A display element having an anode electrode and a cathode electrode and formed on one main surface of the second substrate;
The first substrate and the second substrate are bonded so that a main surface of the first substrate on which the thin film transistor is formed and a main surface of the second substrate on which the display element is formed are opposed to each other. An active matrix display device comprising:
A first electrode which is one of a source electrode and a drain electrode of the thin film transistor is electrically connected to a lower electrode which is one of an anode electrode and a cathode electrode of the display element. And one of the first substrate and the second substrate has a contact spacer for maintaining a predetermined distance between the first substrate and the second substrate,
The other substrate has a contact hole facing the contact spacer,
An active matrix display device, wherein a tip of the contact spacer is fixed in the contact hole.   2. The active matrix display device according to claim 1, wherein the contact spacer comprises a columnar insulating structure and a conductive film formed on a surface thereof.   The contact spacer is formed on the lower electrode, the contact hole is formed on the first electrode, and a surface of the first electrode is exposed at a bottom surface of the contact hole. Active matrix display device described   The contact spacer is formed on the first electrode, the contact hole is formed on the lower electrode, and a surface of the lower electrode is exposed at a bottom surface of the contact hole. Active matrix display device   5. The active matrix display device according to claim 3, wherein a conductive film connected to the first electrode or the lower electrode is formed on a side surface of the contact hole.   The first electrode and the lower electrode are electrically connected via a bonding member filled in at least a part of the contact hole, and a tip end portion of the contact spacer is embedded in the bonding member. The active matrix display device according to claim 1.   7. The active matrix display device according to claim 6, wherein the joining member is made of a material formed by solidifying conductive ink or conductive paste by drying or sintering.   The active matrix display device according to claim 7, wherein the conductive ink contains a liquid medium and inorganic nanoparticles dispersed in the liquid medium.   9. The active matrix display device according to claim 8, wherein the inorganic nanoparticles include at least one selected from the group consisting of Au, Ag, Cu, Pd, Pt, Ni, ITO, Al, silver sulfide, and silver oxide. 8. The active matrix display device according to claim 7, wherein the conductive paste includes at least one selected from the group consisting of a PbSn alloy, a SnAg alloy, and Ag. The active matrix display device according to claim 7, wherein the conductive paste contains a polymer. The active matrix display device according to claim 1, wherein the thin film transistor includes an organic semiconductor. A thin film transistor having a first substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode, and a semiconductor film formed on one main surface of the first substrate, a second substrate, an anode electrode, and a cathode A method of manufacturing an active matrix display device having an electrode and a display element formed on one main surface of the second substrate, wherein the first substrate and the second substrate are connected to the first substrate. The main surface on which the thin film transistor is formed and the main surface on which the display element of the second substrate is formed are opposed to each other,
A first electrode which is one of a source electrode and a drain electrode of the thin film transistor is electrically connected to a lower electrode which is one of an anode electrode and a cathode electrode of the display element. And forming a contact spacer for maintaining a predetermined distance between the first substrate and the second substrate on one of the first substrate and the second substrate;
Forming a contact hole facing the contact spacer on the other substrate;
Bonding the first substrate and the second substrate in order to fix the tip of the contact spacer in the contact hole by a bonding member and electrically connect the first electrode and the lower electrode;
A method for manufacturing an active matrix display device characterized by comprising The step of bonding the first substrate and the second substrate includes:
Filling the contact hole with conductive ink or conductive paste using a plate printing method or a plateless printing method;
Sinking the tip of the contact spacer into the filled conductive ink or conductive paste;
Solidifying the conductive ink or conductive paste in which the tip portion is submerged by drying or sintering;
A method for manufacturing an active matrix display device according to claim 13. The step of bonding the first substrate and the second substrate includes:
Transfer printing from the transfer printing plate with conductive ink or conductive paste on the tip of the contact spacer;
Filling the contact hole with the conductive ink or the conductive paste by inserting the contact spacer on which the conductive ink or the conductive paste is transferred and printed into the contact hole;
Solidifying the conductive ink or conductive paste filled in the contact hole by drying or sintering;
A method for manufacturing an active matrix display device according to claim 13.

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