JP2012198386A5 - - Google Patents

Description

An electro-optical device according to one embodiment of the present invention includes a pixel transistor, a first pixel electrode electrically connected to the pixel transistor, and a plurality of interlayers disposed between the pixel transistor and the pixel electrode. A groove-shaped recess provided in at least one of the plurality of interlayer insulating films between the insulating film and the second pixel electrode adjacent to the first pixel electrode, and covering the groove-shaped recess The first electrode layer arranged in such a manner, the dielectric layer arranged so as to cover the first electrode layer at least inside the groove-like recess, and the dielectric layer at least inside the groove-like recess. A storage capacitor including a second electrode layer disposed to cover the second electrode layer, and the second electrode layer is electrically connected to the pixel electrode side source / drain region of the pixel transistor and the pixel electrode. What And features.
The electro-optical device according to the present invention includes a substrate, a pixel transistor provided on one side of the substrate, a pixel electrode provided corresponding to the pixel transistor, the pixel transistor, and the pixel electrode. Provided in at least one of the plurality of interlayer insulating films in a region overlapping with the pixel electrode adjacent to the pixel electrode in plan view. Grooved recesses, at least a first electrode layer formed along the bottom and side walls of the grooved recesses, and at least the inside of the grooved recesses on the side opposite to the substrate with respect to the first electrode layer And a storage capacitor composed of a second electrode layer laminated on the opposite side of the dielectric layer from the dielectric layer, at least inside the groove-shaped recess. Previous The second electrode layer, characterized in that electrically connected the pixel electrode side source drain region of the pixel transistor and to said pixel electrode.

Claims (10)

A pixel transistor,
A first pixel electrode electrically connected to the pixel transistor;
A plurality of interlayer insulating films disposed between the pixel transistor and the pixel electrode;
A groove-like recess provided in at least one of said plurality of layers of the interlayer insulating film between the second pixel electrode adjacent to the first pixel electrode,
Inside of the first electrode layer disposed to cover the groove-like recess, and the dielectric layer disposed to cover at least the first electrode layer inside of the groove-like recess, and at least the groove-like recess A storage capacitor including a second electrode layer disposed so as to cover the dielectric layer;
Have
The electro-optical device, wherein the second electrode layer is electrically connected to a pixel electrode side source / drain region of the pixel transistor and the pixel electrode. The electro-optical device according to claim 1, wherein the first electrode layer and the second electrode layer include a conductive film that blocks light . The second electrode layer and the pixel electrode include a first contact hole formed in an interlayer insulating film interposed between the second electrode layer and the pixel electrode among the plurality of interlayer insulating films. The electro-optical device according to claim 1, wherein the electro-optical device is electrically connected. A relay electrode including a conductive film in the same layer as the first electrode layer is provided between the pixel electrode side source / drain region and the second electrode layer,
The relay electrode and the second electrode layer include a second contact hole formed in an interlayer insulating film interposed between the relay electrode and the second electrode layer among the plurality of interlayer insulating films. The electro-optical device according to claim 3, wherein the electro-optical device is electrically connected. Wherein between the pixel electrode side source drain region and the relay electrode is electrically connected to Ru drain electrode provided on the pixel electrode side source drain region,
The drain electrode and the relay electrode are electrically connected through a contact hole formed in an interlayer insulating film interposed between the drain electrode and the relay electrode among the plurality of interlayer insulating films. The electro-optical device according to claim 4. Of the plurality of interlayer insulating films, the interlayer insulating film in which the groove-shaped recess is formed has a first recess in a region where the contact hole for conducting the drain electrode and the relay electrode is formed. The electro-optical device according to claim 5, wherein the electro-optical device is formed. The plurality of interlayer insulating films include a first interlayer insulating film in which the groove-shaped recess is formed, and a second interlayer insulating film disposed so as to cover the first interlayer insulating film,
The first electrode layer, the dielectric layer, and the second electrode are provided in a second recess formed by covering the groove-shaped recess in the second interlayer insulating film with the second interlayer insulating film. The electro-optical device according to claim 1, wherein the electro-optical device is provided. 8. The liquid crystal layer according to claim 1, wherein a liquid crystal layer is disposed between the first pixel electrode and a counter substrate disposed so as to face the first pixel electrode. The electro-optical device described. A projection display device comprising the electro-optical device according to claim 1,
A projection-type display device comprising: a light source unit that emits illumination light applied to the electro-optical device; and a projection optical system that projects light modulated by the electro-optical device.   An electronic apparatus comprising the electro-optical device according to claim 1.