JP2012195578A - Substrate processing apparatus and substrate processing method, and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To supply a solvent vapor to a substrate with maintaining high in-plane uniformity when improving roughness of a pattern mask by supplying a solvent to a substrate.SOLUTION: In a processing chamber 1 including a lid 12 and a base substance 11, a wafer W is loaded on a stage 21 provided in the base substance 11 and a solvent support 3 is provided so as to face the wafer W, in which a solvent is absorbed. When the processing chamber 1 is closed and the wafer W on the stage 21 is heated to a temperature higher than a dew-point temperature of the solvent and lower than a boiling point, the solvent evaporates from the whole area of the solvent support 3 to form a saturated vapor atmosphere of the solvent between the wafer W and the solvent support 3. As above, because the entire surface of the wafer W is almost simultaneously exposed to the saturated vapor atmosphere, the solvent vapor can be supplied with maintaining in-plane uniformity of the substrate.

Description

  The present invention relates to a substrate processing apparatus, a substrate processing method, and a storage medium for improving roughness of a pattern mask on a substrate on which a pattern mask is formed by exposure and development.

  In the manufacturing process of semiconductor devices and LCD substrates, a resist pattern is applied to the surface of a substrate, for example, a semiconductor wafer (hereinafter referred to as “wafer”) and exposed, followed by development processing to form a predetermined pattern mask on the wafer surface. To be formed. At this time, as described in Patent Document 1, there are fine irregularities on the surface of the resist pattern after the development process, and when the etching process is performed in a later step, the irregularities on the surface become the pattern line width. It is known that it may adversely affect For this reason, a smoothing process for improving the roughness (LER: Line Edge Roughness) of the resist pattern and the variation of the pattern line width (LWR: Line Width Roughness) has been proposed.

  This smoothing treatment is performed by exposing the resist pattern in an atmosphere of an organic solvent vapor that dissolves the resist and causing the organic solvent to swell in the surface layer portion of the resist pattern. As a result, the surface layer is dissolved and smoothed in the organic solvent, the roughness of the pattern surface is improved, and the pattern shape is corrected. Thereafter, the organic solvent is volatilized and removed by performing a heat treatment.

  In Patent Document 1, a solvent gas is supplied from the nozzle to the substrate while relatively moving the nozzle and the substrate, and only the surface of the substrate treatment film is dissolved, thereby Techniques for improving surface roughness are described. In this method, since the solvent gas is supplied from the nozzle to the substrate with the nozzle moved, in the region where the solvent gas is first supplied and the region where the solvent gas is supplied last in the substrate surface. There is a possibility that the supply amount of the solvent gas is different. For this reason, the degree of dissolution of the surface layer portion of the resist pattern differs between the region where the supply amount of the solvent gas is low and the region where the supply amount is large, and it is difficult to ensure high in-plane uniformity for the surface treatment. There is.

  In addition, as a method for supplying solvent gas to the substrate without moving the nozzle, an apparatus for supplying the solvent gas from the central portion of the chamber while exhausting from the peripheral portion of the chamber is applied. It has also been studied to supply a solvent gas toward the peripheral edge. However, in this configuration, the solvent gas does not easily reach the peripheral portion having a larger area than the central portion, and the supply amount of the solvent gas may change between the central portion and the peripheral portion of the wafer. As a result, when the supply amount of the solvent gas is small, the peripheral surface resist pattern does not sufficiently improve the surface, whereas when the supply amount is too large, the central resist pattern may be dissolved. There is a concern about the difficulty of ensuring in-plane uniformity.

Japanese Patent No. 4328667 (FIGS. 4, 5, 9, etc.)

  The present invention has been made to solve such problems, and performs a process of improving the roughness of the pattern mask by supplying solvent vapor to the substrate on which the pattern mask has been formed by exposure and development. In order to achieve this, it is an object of the present invention to provide a technique capable of supplying a solvent vapor to a substrate while ensuring high in-plane uniformity.

The substrate processing apparatus of the present invention is an apparatus for processing a substrate on which a pattern mask is formed by exposure and development to improve the roughness of the pattern mask.
An openable and closable processing container configured to be vertically divided into a lid and a base,
An opening and closing mechanism for opening and closing the processing container;
A stage provided on the base for mounting the substrate;
A heating unit for heating the substrate placed on this stage to a temperature higher than the dew point temperature of the solvent;
The lid is disposed so as to face the entire surface of the substrate on the stage, and becomes a solvent evaporation source for making the atmosphere between the substrate and the substrate a saturated vapor atmosphere when the processing container is closed. And an evaporation source forming member.

Moreover, the substrate processing method of the present invention comprises:
In a method of performing processing for improving the roughness of the pattern mask on a substrate on which a pattern mask is formed by exposure and development processing,
Using an openable and closable processing container configured to be vertically split into a lid and a base,
Opening the processing vessel;
Next, a step of placing a substrate on a stage provided on the substrate;
The process vessel is closed and the evaporation source forming member is positioned so as to face the entire surface of the substrate on the stage to evaporate the solvent from the evaporation source forming member, and between the evaporation source forming member and the substrate. A step of setting the atmosphere to a saturated vapor atmosphere of a solvent;
Before this step, the step of heating the substrate to a temperature higher than the dew point temperature of the solvent in the saturated vapor atmosphere.

Furthermore, the storage medium of the present invention provides
A storage medium storing a computer program that operates on a computer and is used in an apparatus that performs processing to improve the roughness of the pattern mask on a substrate on which a pattern mask has been formed by exposure and development. ,
The computer program is characterized in that steps are set so as to implement the above-described method.

  According to the present invention, the inside of the processing container is disposed so as to face the entire surface of the substrate on the stage, and the atmosphere between the substrate and the substrate when the processing container is closed is a saturated vapor atmosphere of a solvent. An evaporation source forming member is provided as a solvent evaporation source. For this reason, when the processing container is closed inside the processing container, the entire surface of the substrate is exposed to the saturated vapor atmosphere of the solvent almost simultaneously. Steam can be supplied.

1 is a longitudinal sectional view showing a substrate processing apparatus according to a first embodiment of the present invention. It is a top view which shows the said substrate processing apparatus. It is sectional drawing which shows the storage part provided in the said substrate processing apparatus. It is a longitudinal cross-sectional view for demonstrating the effect | action of the said substrate processing apparatus. It is a longitudinal cross-sectional view for demonstrating the effect | action of the said substrate processing apparatus. It is a longitudinal cross-sectional view for demonstrating the effect | action of the said substrate processing apparatus. It is sectional drawing for demonstrating the surface treatment performed in the process chamber provided in the said substrate processing apparatus. It is explanatory drawing which shows the effect | action of the said surface treatment. It is a longitudinal cross-sectional view which shows the substrate processing apparatus which concerns on the other example of the 1st Embodiment of this invention. It is a top view which shows the substrate processing apparatus which concerns on the further another example of the 1st Embodiment of this invention. It is a longitudinal cross-sectional view which shows the effect | action of the substrate processing apparatus shown in FIG. It is a longitudinal cross-sectional view which shows the substrate processing apparatus which concerns on the further another example of the 1st Embodiment of this invention. It is a longitudinal cross-sectional view which shows the effect | action of the substrate processing apparatus shown in FIG. It is a top view which shows an example of the resist pattern formation apparatus with which the substrate processing apparatus of this invention is integrated. It is sectional drawing which shows the resist pattern formation apparatus shown in FIG. It is a top view which shows an example of the processing apparatus in which the substrate processing apparatus of this invention is integrated. It is sectional drawing which shows the processing apparatus shown in FIG. It is a longitudinal cross-sectional view which shows the substrate processing apparatus which concerns on the 2nd Embodiment of this invention. It is a top view which shows the substrate processing apparatus shown in FIG. It is a front view which shows the steam generation chamber provided in the substrate processing apparatus shown in FIG. It is a longitudinal cross-sectional view which shows the effect | action of the substrate processing apparatus shown in FIG. It is a longitudinal cross-sectional view which shows the effect | action of the substrate processing apparatus shown in FIG. It is a longitudinal cross-sectional view which shows the substrate processing apparatus which concerns on the other example of the 2nd Embodiment of this invention. It is a top view which shows the substrate processing apparatus shown in FIG. It is a front view which shows the steam generation chamber provided in the substrate processing apparatus shown in FIG. It is a longitudinal cross-sectional view which shows the effect | action of the substrate processing apparatus shown in FIG. It is a top view which shows an example of the processing apparatus in which the substrate processing apparatus of the 2nd Embodiment of this invention is integrated. It is sectional drawing which shows the processing apparatus shown in FIG. It is a top view which shows the other example of the processing apparatus with which the substrate processing apparatus of the 2nd Embodiment of this invention is integrated. It is process drawing which shows the process by a substrate processing apparatus. It is process drawing which shows the process by a substrate processing apparatus.

  The substrate processing apparatus of the present invention will be described below with reference to the drawings. This substrate processing apparatus is an apparatus for performing a surface treatment for improving the roughness of the pattern mask on a substrate on which a pattern mask is formed by exposure and development. FIG. 1 shows the first of the substrate processing apparatus. FIG. 2 is a plan view showing a longitudinal section of the embodiment. In the figure, reference numeral 1 denotes a processing chamber for forming a processing atmosphere. The processing chamber 1 is composed of a base body 11 whose upper side is open and a lid body 12 provided so as to cover the upper surface opening of the base body 11. It is configured so as to be split up and down, and forms a processing container that can be opened and closed. The processing chamber 1 is formed in a cylindrical shape, for example, and the base body 11 and the lid body 12 are made of, for example, stainless steel (SUS).

  The base body 11 is constituted by a side wall portion 11a and a bottom plate 11b so that a concave portion having a circular planar shape is formed therein. On the other hand, the lid body 12 is constituted by a side wall portion 12a and a top plate 12b so as to form a recess having a lower side opened therein. The base 11 and the lid 12 are joined to each other by placing the peripheral region of the side wall 12 a of the lid 12 on the side wall 11 a of the base 11. In this example, the lid 12 is moved by the lifting mechanism 13 so that the lid 12 closes the upper surface opening of the base 11 to perform surface treatment, and the lid 12 is on the upper side of the base 11. It is configured to be able to move up and down between a wafer W and a transfer position when transferring a later-described solvent holder. The lifting mechanism 13 constitutes an opening / closing mechanism for opening / closing the processing chamber 1.

  The substrate 11 includes a stage 21 for placing the wafer W therein. A heater 22 that forms a heating unit is provided inside the stage 21 so that the wafer W placed on the stage 21 has a temperature higher than a dew point temperature of a solvent to be described later and lower than a boiling point of the solvent. It is supposed to be heated. In addition, the wafer W is transferred to and from an external transfer mechanism, which will be described later, by a push-up pin 24 provided to the stage 21 so as to be movable up and down by an elevating mechanism 23. In this example, the heater 22 is built in the stage 21, but any configuration may be used as long as the wafer W placed on the stage 21 is heated.

  A ceiling member 25 is disposed on the back surface of the lid 12 so as to face the entire surface of the wafer W placed on the stage 21. The ceiling member 25 is made of, for example, stainless steel, and is configured such that the surface facing the wafer W is maintained at a temperature lower than the temperature of the wafer W on the stage 21. In this example, a temperature adjustment mechanism 26 configured by, for example, a heater, a temperature control channel, or the like is provided inside the ceiling member 25 so that the temperature of the ceiling member 25 is adjusted.

  Further, as described above, the lower surface of the side wall 12a of the lid 12 is configured as a bonding surface whose peripheral region is placed on the side wall 11a of the base 11, and the inner side of this peripheral region (bonding region). Is configured as a stepped portion 14 raised one step. And the solvent holder 3 is provided in this step part 14 so that attachment or detachment is possible.

  The solvent holder 3 serves as an evaporation source forming member that becomes an evaporation source of a solvent for making the atmosphere between the wafer W and the wafer a saturated vapor atmosphere when the processing chamber 1 is closed. For example, as shown in FIG. 2, the solvent holder 3 is configured so that the planar shape is circular and the periphery of a circular absorber 31 having a diameter larger than that of the wafer W is held by an annular frame 32. It is configured. The absorber 31 absorbs and holds the solvent, and is composed of, for example, a porous body such as sponge or porous ceramics, or an aggregate of ceramic or metal fibers. The frame 32 is made of, for example, stainless steel. For example, the diameter L1 of the absorber 31 is set to about 320 mm, the diameter L2 of the frame body is set to about 380 mm, and the thickness of the absorber 31 is set to about 5 mm.

  The solvent holder 3 is held in the processing chamber 1 by adsorbing the frame 32 to the lower surface of the step 14 formed on the lid 12. A suction hole 15 is formed in the side wall portion 12a of the lid body 12 so as to open to a holding region of the frame body 32 in the step portion 14, and the other end side of the suction hole 15 is provided with a valve V1. The exhaust mechanism 17 is connected via a path 16. In this way, the solvent holder 3 is brought into contact with the lower surface of the lid body 12 so that the frame body 32 corresponds to the suction hole 15 and is exhausted by the exhaust mechanism 17, whereby the solvent holder 3 is adsorbed and held by the lid body 12. It will be.

  As described above, when the opening of the base 11 is closed by the lid 12 in a state where the solvent holder 3 is held by the lid 12, the surface of the wafer W placed on the stage 21 in the processing chamber 1. The solvent holder 3 is provided so as to face the whole. In the processing chamber 1, a sealed processing space including an upper space S 1 between the solvent holder 3 and the ceiling member 25 and a lower space S 2 between the solvent holder 3 and the stage 21 is configured. Is done. In this example, both the upper space S1 and the lower space S2 are formed as narrow spaces in order to easily form a saturated vapor atmosphere of the solvent. For example, in the upper space S1, the distance between the upper surface of the absorber 31 and the lower surface of the ceiling member 25 is set to 2 mm, for example, and the lower space S2 is the distance between the lower surface of the absorber 31 and the surface of the wafer W on the stage 21. Is set to 3 mm, for example. The distance between the outer edge of the wafer W and the inner surface of the side wall of the processing chamber 1 is set to 10 mm, for example.

  The substrate processing apparatus of this example is provided with a storage unit 4 that forms a holding unit for holding the solvent holder 3 so as to be adjacent to the processing chamber 1. The solvent holder 3 is held in a shelf shape. The storage unit 4 includes, for example, a rectangular storage chamber 41, and this storage chamber 41 is provided so as to be aligned with the processing chamber 1 in the X direction in FIGS. 1 and 2. In the following description, the X direction in FIG. 2 is the length direction of the storage chamber 41, the Y direction is the width direction, and the processing chamber 1 side of the storage chamber 41 is the front side.

  An opening 42 for carrying the solvent holder 3 in and out of the storage chamber 41 is formed from the front side wall portion 41a to the side wall portions 41b and 41d in the storage chamber 41. The opening 42 is configured to be openable and closable by a shutter 43 that can be moved up and down. A holding member 44 for the solvent holder 3 is provided inside the storage chamber 41. The holding member 44 includes, for example, a pair of rod-like members 44a and 44b provided so as to extend in the length direction (X direction) from the side wall portion 41c on the rear side of the storage chamber 41 toward the front side. 3 is placed on these rod-shaped members 44a and 44b.

  Further, a supply nozzle 5 that forms a solvent supply unit for supplying a solvent to the solvent holder 3 is provided inside the storage chamber 41 so that the discharge region 51 faces upward. The supply nozzle 5 is formed in a long shape so that the discharge region 51 is longer than the diameter L1 of the absorber 31, for example, and the length direction thereof is arranged along the width direction (Y direction). . The supply nozzle 5 is movable in the length direction inside the storage chamber 41 by a nozzle drive mechanism 52 along a nozzle guide rail 53 installed on the bottom plate 41e of the storage chamber 41 and extending in the length direction. It is configured. As a mechanism for moving the nozzle drive mechanism 52 along the nozzle guide rail 53, for example, a ball screw mechanism or the like is used.

  The supply nozzle 5 is connected to a solvent supply source 54 via a supply path 54a provided with a valve V2. As this solvent, a solvent capable of dissolving a resist film is used. For example, acetone, propylene glycol monomethyl ether acetate (PGMEA), isopropyl alcohol, cyclohexanone, propylene glycol monomethyl ether (PGME), γ-butyllactone, pyridine Xylene, N-methyl-2-pyrrolidinone (NMP), butanol, ethyl lactate, ethanol, 2-heptanone, butyl acetate, methyl isobutyl ketone, diethyl ether, anisole and the like are used. The solvent is supplied to the supply nozzle 5 in a liquid state, and a mist or liquid solvent is discharged from the discharge region 51 of the supply nozzle 5.

  In this way, the supply nozzle 5 supplies the mist or liquid solvent from the lower side to the solvent holder 3 placed on the holding member 44 while moving in the storage chamber 41 in the length direction. Further, an exhaust hole 45 is formed in the bottom plate 41e of the storage chamber 41 at a position close to the rear side wall 41c, and the exhaust hole 45 is connected to an exhaust mechanism 47 through an exhaust passage 46 provided with a valve V3. Has been. FIG. 3 is a cross-sectional view of the storage portion 4 as viewed from a position closer to the processing chamber 1 than the supply nozzle 5. Although the storage unit 4 supplies the solvent to the solvent holder 3 as described later, the temperature of the inside of the storage unit 4 may be adjusted to a dew point temperature or lower.

  The solvent holder 3 is configured to be transferred between the processing chamber 1 and the case 4 by a holder transfer mechanism 6. As shown in FIG. 2, the holder transporting mechanism 6 includes a pair of holding members 61 and 62, and the holding members 61 and 62 hold the lower side of the frame body 32 from both sides in the width direction. It is configured. In the figure, reference numeral 60 denotes a holding portion that holds the peripheral portion on the back surface side of the frame body 32. This holding portion 60 is held by the holding member 44 when the holder transport mechanism 6 moves into the storage portion 4 as will be described later. And so as not to interfere with each other.

  The holding members 61 and 62 are respectively extended by arm drive mechanisms 65 and 66 along arm guide rails 63 and 64 extending in the length direction from the side of the processing chamber 1 to the side of the storage unit 4. Further, it is configured to be movable between a position on the processing chamber 1 side and a position on the storage unit 4 side. As a mechanism for moving the arm drive mechanisms 65 and 66 along the arm guide rails 63 and 64, for example, a ball screw mechanism or the like is used. In the figure, 61a and 62a are connection arms for connecting the holding members 61 and 62 and the arm drive mechanisms 65 and 66, and the arm drive mechanisms 65 and 66 are held via these connection arms 61a and 62a. The members 61 and 62 are configured to move up and down.

  As shown in FIGS. 1 and 3, the holding members 61 and 62 normally stand by at a standby position below the storage unit 4, and when the solvent holder 3 is transported, the processing chamber 1 is temporarily used. The position of the solvent holder 3 is transferred to the lid body 12 and the holding member 44 in the storage chamber 41 holds the solvent. It moves between the position where the tool 3 is delivered. For this reason, the height positions of the processing chamber 1 and the storage unit 4 are set so that the transfer region of the holding members 61 and 62 is formed between the upper surface of the base 11 of the processing chamber 1 and the lower surface of the storage unit 4. Each is set, and the transport position of the lid 12 is set to a position that does not hinder the transport of the solvent holder 3 to and from the storage unit 4.

  In this example, as shown in FIG. 2, the processing chamber 1 and the storage unit 4 are provided in a common processing chamber 18, and a side of the processing chamber 18 on the processing chamber 1 side is provided with an external (not shown). A transfer port 19 for transferring the wafer W between the transfer mechanism and the processing chamber 1 is formed.

  The substrate processing apparatus is configured to be controlled by the control unit 100. The control unit 100 is formed of a computer, for example, and includes a program, a memory, and a CPU. In the program, a command (each step) is incorporated so that a control signal is sent from the control unit 100 to each part of the substrate processing apparatus to advance a predetermined surface treatment. This program is stored in a storage unit such as a computer storage medium such as a flexible disk, a compact disk, a hard disk, or an MO (magneto-optical disk) and installed in the control unit 100.

  Here, the program includes the elevating mechanism 13 of the lid 12, valves V1 and V2 of the exhaust mechanisms 17 and 47, the heater 22, the temperature adjusting mechanism 26, the elevating mechanism 23 of the push-up pin 24, the nozzle driving mechanism 52, and the supply path. A program for controlling the valve V3 of 54a and the arm drive mechanisms 65 and 66 is also included, and the respective units are controlled in accordance with a process recipe stored in advance in the memory of the control unit 100. .

  Then, the surface treatment method of this invention is demonstrated. First, the storage unit 4 supplies a mist of PGMEA as a solvent to the solvent holder 3 to be transported, in this example, the solvent holder 3 on the lower side. That is, for example, as shown in FIG. 4 (a), the supply nozzle 5 is blown from the supply nozzle 5 to the lower solvent holder 3 while the supply nozzle 5 is moved to one end side (front side wall side 41a) of the absorber 31. ) To the other end side (rear side wall side 41c). At this time, the solvent mist is not directly sprayed on the region of the absorbent body 31 that contacts the holding member 44, but the absorbent body 31 is formed of a porous body or an aggregate of fibers, and the solvent is contained in the absorbent body 31. It spreads by capillary action. As a result, the solvent also spreads in the region of the absorber 31 that contacts the holding member 44, and the solvent is absorbed by the entire surface of the absorber 31. At this time, the supply amount of the solvent may be in a state where the solvent has permeated the absorber 31 to such an extent that it does not drip from the absorber 31. For example, if the absorber 31 has the above-mentioned size, 1 ml About 50 ml of solvent is absorbed.

  On the other hand, in the processing chamber 1, as shown in FIG. 4, the lid 12 is raised to the transfer position, the wafer W is loaded from the opening formed in this way, and an external transfer mechanism (not shown) and the push-up pin 24 are not connected. It is placed on the stage 21 by the collaborative work. The heater 22 heats the wafer W on the stage 21 to a temperature that is higher than the dew point temperature of the solvent and lower than the boiling point of the solvent, for example, 50 ° C., and the lower surface of the ceiling member 25 is The wafer W is heated to a temperature lower than that of the wafer W, for example, 40 ° C.

  Then, the holding members 61 and 62 are slid from the standby position to the upper side of the base body 11. 4 to 6, the moving mechanisms 65 and 66 of the holding members 61 and 62 and the push-up pin 24 are omitted. Subsequently, the arm driving mechanisms 65 and 66 raise the height of the holding members 61 and 62 to a height position where the holding members 61 and 62 can enter immediately below the solvent holder 3 to be transported. In the storage unit 4, the shutter 43 is raised to open the opening 42, and the valve V <b> 3 is opened at the timing when the shutter 43 starts to rise, and the exhaust mechanism 47 starts exhausting the storage unit 4. Then, the holding members 61 and 62 are moved toward the lower side of the lower solvent holder 3.

  Thereafter, as shown in FIG. 5, the holding members 61 and 62 are raised to receive the solvent holder 3 from the holding member 44, and the solvent holder 3 is moved to the lower side of the lid 12. Next, as shown in FIG. 6, after the lid body 12 is lowered and the frame body 32 and the stepped portion 14 are brought into contact with each other, the valve V1 is opened and the exhaust hole 17 is exhausted by the exhaust mechanism 17. The solvent holder 3 is adsorbed and held on the body 12.

  Thereafter, after the wafer W placed on the stage 21 is heated to a temperature higher than the dew point temperature of the solvent, the lid 12 is lowered to the processing position, and the opening of the base 11 is closed by the lid 12. (See FIG. 1). In the present invention, the transfer mechanism for transferring the solvent holder 3 from the storage unit 4 to the lid 12 of the processing chamber 1 and mounting it is the holder transfer mechanism 6, the lifting mechanism 13, the suction hole 15, and the exhaust mechanism 17. It is comprised by.

  When the processing chamber 1 is closed, the solvent holder 3 is provided close to the ceiling member 25 and the stage 21 as described above, and is heated to, for example, 40 ° C. by heat from these. Thus, as shown in FIG. 7, the solvent absorbed in the absorber 31 evaporates and fills the upper space S <b> 1 and the lower space S <b> 2 of the solvent holder 3. For this reason, saturated vapor atmospheres are formed in the upper space S1 and the lower space S2 of the solvent holder 3, respectively, and at this time, an equilibrium state is maintained by the absorber 31. Therefore, in the lower space S2, a saturated vapor atmosphere of the solvent is formed without dew condensation on the wafer W, and a stable high-concentration solvent vapor is filled.

  Thus, the entire surface of the pattern mask formed on the surface of the wafer W is exposed to the saturated vapor atmosphere almost simultaneously. Therefore, a stable and high concentration solvent vapor is supplied to the wafer W while ensuring high in-plane uniformity. At this time, since the wafer W is adjusted to a temperature higher than the dew point of the solvent and lower than the boiling point of the solvent, the solvent molecules collide with the resist pattern on the surface of the pattern mask, and the pattern surface is swollen by the solvent. However, the phenomenon that the solvent volatilizes again due to the heat of the wafer W has repeatedly occurred. For this reason, in the pattern mask, as shown in FIG. 8, only the surface layer portion 91 of the pattern 9 absorbs the solvent and swells with the solvent, and the resist film softens and dissolves at that portion by the solvent. It does not penetrate inside the mask, and dissolution and deformation of the pattern shape can be suppressed. As a result, only fine irregularities on the surface of the pattern mask are flattened, the roughness of the pattern surface is improved, and variations in the pattern line width are reduced.

  On the other hand, during the surface treatment in the processing chamber 1, for example, in the storage unit 4, the solvent mist is sprayed from the supply nozzle 5 to the upper solvent holder 3, and the absorber 31 of the solvent holder 3. The solvent is absorbed (see FIG. 6). After finishing the surface treatment in this manner, the lid 12 is first raised, the wafer W is transferred to the external transfer mechanism, and transferred to the outside of the processing chamber 18 through the transfer port 19. Next, after the holding members 61 and 62 are moved from the standby position to a position immediately below the lid body 12, the exhaust by the exhaust mechanism 17 is stopped, the adsorption holding of the solvent holder 3 by the lid body 12 is released, and the solvent The holder 3 is transferred to the holding members 61 and 62. Subsequently, the height positions of the holding members 61 and 62 are adjusted, and the holding members 61 and 62 are slid toward the upper side of the holding member 44 on which the solvent holder 3 is placed and then lowered. Then, the solvent holder 3 is delivered to the holding member 44. Then, the holding members 61 and 62 are slid again to the processing chamber 1 side, adjusted in height position, and slid to the standby position.

  In the above-described embodiment, the solvent vapor is supplied to the wafer W with high in-plane uniformity. That is, when the processing chamber 1 is closed by the lid 12 holding the solvent holder 3, the solvent absorbed in the absorber 31 of the solvent holder 3 by the heat from the stage 21 and the ceiling member 25 as described above. Evaporation occurs. Since the absorber 31 has a larger planar shape than the wafer W and is provided so as to face the wafer W, solvent vapor is supplied from the entire facing surface of the wafer W when viewed from the wafer W on the stage 21. It becomes a state to be.

  In the processing chamber 1, as described above, a saturated vapor atmosphere of solvent vapor is formed and the solvent vapor is filled with a stable high concentration. For this reason, a highly concentrated solvent vapor is supplied to the wafer W almost uniformly and stably over the entire surface, and the surface layer portion of the pattern mask on the surface of the wafer W has high in-plane uniformity. Surface treatment proceeds in the state.

  Furthermore, since the ceiling member 25 is adjusted to a temperature lower than the temperature of the wafer W and the equilibrium state is maintained by the absorber 31, dew condensation on the wafer W is suppressed in the lower space S2 where the wafer W is provided, A saturated steam atmosphere is maintained. In addition, the processing chamber 1 is heated by heat transfer from the stage 21, but depending on the type of solvent, condensation may occur not only on the lower surface of the ceiling member 25 but also on the side wall of the processing chamber 1. However, there is a solvent holder 3 in which the solvent is absorbed in the vicinity of the wafer W, and the amount of the solvent absorbed in the solvent holder 3 is much larger than the dew condensation amount on the side wall. Further, since the side wall is separated from the wafer W, even if the solvent condensed on the side wall evaporates, it is lost to the solvent vapor evaporated from the solvent holder 3, thereby preventing the uniform supply of the solvent vapor to the wafer W. There is no fear.

  As described above, the surface treatment of the present invention improves the roughness of the resist pattern surface and corrects the pattern shape. Therefore, the etching process can be performed using a highly accurate pattern shape in a later step. For this reason, the occurrence of variations in the pattern line width is suppressed, and the LWR can be improved.

  Furthermore, since the high-concentration solvent vapor can be supplied to the wafer W as described above, the time required for the surface treatment can be shortened. Further, since the wafer W is heated, the fluidity of the resist polymer is increased by the combination of the swelling of the surface portion of the pattern mask and the heat, so that the time required for the improvement process can be shortened also in this respect.

  Next, another example of the substrate processing apparatus according to the first embodiment will be described with reference to FIGS. 9 to 13, parts having the same configuration as that of the first embodiment are denoted by the same reference numerals, and description thereof is omitted. Moreover, description about the holder conveyance mechanism 6 and the push-up pin 24 may be omitted.

  In the example shown in FIG. 9, the supply nozzle 5 constituting the solvent supply unit is fixedly provided in the vicinity of the front side wall portion 41 a in the storage chamber 41. In this configuration, since the supply nozzle 5 does not move, when the solvent holder 3 moves from the storage unit 4 to the processing chamber 1 side, by blowing solvent mist from the supply nozzle 5 to the solvent holder 3, Supply of the solvent to the absorber 31 is performed.

  At this time, for example, at the timing when the holder transport mechanism 6 holds the solvent holder 3 in the storage unit 4, the spraying of the solvent mist from the supply nozzle 5 is started, and the solvent holder 3 closes the lid of the processing chamber 1. The control unit 100 outputs a control signal to the valve V2 so that the spraying of the solvent mist is stopped at the timing when the movement of the body 12 to the lower side is completed. Other configurations and operations are the same as those in the first embodiment.

  The configuration shown in FIGS. 10 and 11 is an example in which the solvent is supplied to the solvent holder 3 on the processing chamber 1 side. The supply nozzle 55 constituting the solvent supply unit in this example is configured in the same manner as the supply nozzle 5 shown in FIG. 1, and a discharge region 55a longer than the diameter L1 of the absorber 31 is formed on the upper portion. . The supply nozzle 55 is arranged such that its length direction extends in the width direction (Y direction) of the processing chamber 18. Further, on the upper side of the substrate 11, the nozzle drive mechanism 56 is configured to be movable along a nozzle guide rail 56 a extending in the length direction (X direction) of the processing chamber 18. In this example, as shown in FIG. 10, an area on the opposite side of the storage section 4 outside the processing chamber 1 is set as a standby position for the supply nozzle 55, and the nozzle guide rail 56 a interferes with the arm guide rails 63 and 64. It is installed so as not to.

  The storage unit 4 is configured in the same manner as the storage unit 4 shown in FIG. 1 except that the supply nozzle 5, the drive mechanism 52, the guide rail 53, and the exhaust hole 45 are not provided. The configuration is the same as that of the first embodiment described above. In FIG. 11, illustration of the push-up pin 24 and the lifting mechanism 23 is omitted.

  In this example, the solvent holder 3 is adsorbed and held on the lid 12 by the same operation as in the first embodiment except that the storage unit 4 does not supply the solvent mist to the solvent holder 3. Next, as shown in FIG. 11, while the lid 12 is positioned above the movement region of the supply nozzle 55, the supply nozzle 55 is moved while spraying the solvent mist from the supply nozzle 55 toward the solvent holder 3. The absorber 31 is moved from one end side (standby area side) to the other end side (storage unit 4 side). Thus, after the solvent mist is absorbed by the entire surface of the absorber 31, the lid 12 is lowered to close the opening of the substrate 11, and the surface treatment is performed in the processing chamber 1 in the same manner as described above.

  Furthermore, the example shown in FIG. 12 has a configuration in which the solvent mist is supplied to the solvent holder 3 by a solvent nozzle 57 that forms a solvent supply unit provided in the lid 12 of the processing chamber 1. The solvent nozzle 57 in this example is formed of, for example, a tubular body, and is provided so that one end side of the solvent nozzle 57 contacts the upper surface of the absorber 31 when the solvent holder 3 is adsorbed and held by the lid body 12. The other end of the solvent nozzle 57 is connected to a solvent supply source 58 via a supply path 58a provided with a valve V4. The storage unit 4 is configured in the same manner as the storage unit 4 shown in FIG. 1 except that the supply nozzle 5, the drive mechanism 52, the guide rail 53, and the exhaust hole 45 are not provided. The configuration is the same as that of the first embodiment described above.

  In this configuration, except that the solvent mist is not supplied to the solvent holder 3 in the storage unit 4, the solvent holder 3 is adsorbed and held on the lid 12 by the same operation as in the first embodiment. As shown in FIG. 13, one end side of the solvent nozzle 57 is brought into contact with the upper surface of the absorber 31. In this state, the valve V4 is opened, and a liquid solvent is supplied to the absorber 31 at a flow rate of about 1 cc / min. In the absorber 31, the solvent gradually diffuses from the supply position due to capillary action, and reaches the entire surface of the absorber 31 after a predetermined time. After the preset time has elapsed, the valve V4 is closed and the wafer W is loaded and placed on the stage 21. Then, the lid 12 is lowered to close the opening of the base 11, and surface treatment is performed in the processing chamber 1 in the same manner as described above.

  In the substrate processing apparatus shown in FIGS. 9 to 13, as in the first embodiment, the solvent vapor can be supplied in a state with high in-plane uniformity, and the pattern mask can be dissolved while suppressing the dissolution of the pattern mask. Unevenness of the surface layer portion can be flattened. Thereby, roughness can be reduced and LWR can be improved.

  In the above, in the substrate processing apparatus shown in FIGS. 1, 9, and 10, before the step of setting the atmosphere between the solvent holder 3 and the wafer W to the saturated vapor atmosphere of the solvent in the processing chamber 1, It is only necessary that the wafer W is heated to a temperature higher than the dew point temperature of the solvent in the saturated vapor atmosphere, and the loading of the solvent holder 3 into the processing chamber 1 and the loading of the wafer W may be performed substantially simultaneously. Alternatively, the wafer W may be loaded after the solvent holder 3 is loaded, or the solvent holder 3 may be loaded after the wafer W is loaded.

  Next, an example of a resist pattern forming system in which an exposure unit (exposure apparatus) is connected to a coating and developing apparatus incorporating the substrate processing apparatus will be briefly described. FIG. 14 is a plan view of the system, and FIG. 15 is a longitudinal sectional view of the system. In this apparatus, a carrier block S1 is provided. In this block S1, the transfer arm C takes out the wafer W from the sealed carrier 102 mounted on the mounting table 101, and is adjacent to the block S1. In addition, the transfer arm C is configured to receive the processed wafer W processed in the process block S2 and return it to the carrier 102.

  As shown in FIG. 15, the processing block S2 is a first block (DEV layer) B1 for performing development processing, and an antireflection film forming process formed on the lower layer side of the resist film in this example. The second block (BCT layer) B2, the third block (COT layer) B3 for applying the resist solution, and the antireflection film forming process formed on the upper layer side of the resist film. 4 blocks (TCT layers) B4 are stacked in order from the bottom.

  The second block (BCT layer) B2 and the fourth block (TCT layer) B4 are performed by a coating module for applying a chemical solution for forming an antireflection film by spin coating, and this coating module. A heating / cooling system processing module group U1 for performing pre-processing and post-processing, and a transfer arm A2 which is provided between the coating module and the processing module group U1 and transfers the wafer W between them. , A4. The third block (COT layer) B3 has the same configuration except that the chemical solution is a resist solution.

  On the other hand, for the first processing block (DEV layer) B1, for example, the development modules 103 are stacked in two stages in one DEV layer B1. In the DEV layer B1, a common transfer arm A1 for transferring the wafer W to the two-stage development module 103 is provided. Further, the substrate processing apparatus 104 of the present invention is assigned as a processing module incorporated in the processing module group U1 of the first processing block (DEV layer) B1. The substrate processing apparatus 104 is provided such that the processing chamber 1 is positioned on the transfer arm A1 side, and the transfer of the wafer W to the processing chamber 1 is performed by the transfer arm A1. Further, a shelf unit U2 is provided in the processing block S2, and the wafers W are transferred between the portions of the shelf unit U2 by a transfer arm D that can be moved up and down provided in the vicinity of the shelf unit U2.

  In such a resist pattern forming apparatus, the wafer W from the carrier block S1 is sequentially transferred by the transfer arm C to one transfer module of the shelf unit U1, for example, the corresponding transfer module CPL2 of the second block (BCT layer) B2. Then, it is carried into the second block (BCT layer) B2 via the transfer arm A2, and an antireflection film is formed. Next, the wafer W is transferred to the transfer module BF2 of the shelf unit U1 by the transfer arm A2. From here, the wafer W is carried into the third block (COT layer) B3 via the delivery module CPL3 and the transfer arm A3, and a resist film is formed. The wafer W after the resist film is formed is transferred to the transfer module BF3 of the shelf unit U1 by the transfer arm A3.

  Thereafter, for example, the wafer W is transferred to the transfer arm A4 via the transfer module BF3 → the transfer arm D → the transfer module CPL4, and after an antireflection film is formed on the resist film, the transfer arm A4 transfers the wafer W to the transfer module TRS4. Delivered. In some cases, the antireflection film is not formed on the resist film, or the wafer W is subjected to a hydrophobic treatment instead of forming the antireflection film below the resist film.

  On the other hand, in the upper part of the DEV layer B1, a shuttle arm E, which is a dedicated transfer means for directly transferring the wafer W from the transfer module CPL11 provided in the shelf unit U2 to the transfer module CPL12 provided in the shelf unit U3. Is provided. The wafer W on which the resist film and further the antireflection film are formed is transferred by the transfer arm D to the transfer module CPL11 via the transfer modules BF3 and TRS4, and directly from there to the transfer module CPL12 of the shelf unit U3 by the shuttle arm E. It is conveyed and taken into the interface block S3. The delivery module with CPL in FIG. 15 also serves as a cooling module for temperature control, and the delivery module with BF also serves as a buffer module on which a plurality of wafers W can be placed. Yes.

  Next, the wafer W is transferred to the exposure apparatus S4 by the interface arm F, and after performing a predetermined exposure process, it is placed on the delivery module TRS6 of the shelf unit U3 and returned to the processing block S2. The returned wafer W is subjected to development processing in the first block (DEV layer) B1, and then transferred to the substrate processing apparatus 104, where the surface treatment described above is performed. Next, in the block B1, it is conveyed to a heating module provided in the processing module group U1, where it is heated to a predetermined temperature, for example, 100 ° C., and the solvent remaining in the resist pattern is removed. Then, for example, it is transported to the cooling module provided in the processing module group U1 by the transport arm A1, and after being cooled to a predetermined temperature, for example, 23 ° C., then transported to the transfer range in the access range of the transfer arm C in the shelf unit U2. And returned to the carrier 100 via the delivery arm C.

  Further, the processing chamber 1 and the storage unit 4 provided in the above-described substrate processing apparatus may be incorporated in a processing apparatus dedicated to surface processing shown in FIGS. FIG. 16 is a plan view of the processing apparatus, FIG. 17 is a longitudinal sectional view of the apparatus, and the same components as those in the resist pattern forming apparatus shown in FIGS. Omitted. In the figure, S11 is a carrier block. In this block S11, the wafer W is transferred by the transfer arm C1 between the carrier 102 on the mounting table 101 and the transfer module 105 provided in the block S11. . The delivery arm C1 is configured to be movable forward and backward, rotatable, movable up and down, and movable in the Y direction in FIG. The delivery module 105 may be provided in the processing block S21 provided adjacent to the carrier block S11.

  The processing block S21 is provided with a shelf unit U4 in which modules for processing the wafers W are provided in multiple stages. In the shelf unit U4, for example, modules are arranged along the arrangement direction (Y direction in FIG. 16) of the carriers 102. For example, as shown in FIG. 17, the processing module including the processing chamber 1 that performs the surface treatment described above. 106, a storage module 107 including the storage unit 4 described above, a heating module 108 for performing a heat treatment on the wafer W after the surface treatment, and a cooling module for performing a cooling treatment on the wafer W after the heat treatment. 109 in multiple stages.

  The processing block S21 is provided with a transfer arm A6 for transferring the wafer W between each module of the shelf unit U4 and the delivery module 105. The transfer arm A6 in this example is configured by, for example, an arm 66A for transferring the solvent holder 3 and an arm 66B for transferring the wafer W arranged vertically, and the arms 66A and 66B are independent of each other. Thus, it is configured to be able to advance and retreat on the base 67. The arm 66A is configured to support, for example, a part of the peripheral edge of the frame 32 of the solvent holder 3 from the back surface, and the arm 66B supports, for example, a part of the peripheral edge of the wafer W from the back surface. It is configured. Further, the base 67 is configured to be movable up and down and rotatable about a vertical axis by the first drive mechanism 67A, and moved along the guide rail extending in the Y direction in FIG. 16 by the second drive mechanism 67B. It is configured freely. Further, the transfer arm A6 includes a surrounding member 68 so as to surround the periphery of the arm 66A for the solvent holder 3. The surrounding member 68 is fixed to the base 67 by a support portion 68A, for example, and is configured so that the arm 66A can advance and retreat inside thereof. Further, an opening 68B through which the arm 66A passes is formed on the front end side of the surrounding member 68, and the arm 66A holding the solvent holder 3 is connected to the outside and inside of the surrounding member 68 via the opening 68B. You can move forward and backward. In the figure, 68C is a notch formed in the surrounding member 68 for the arm 66A to move forward and backward.

  In such an apparatus, the wafer W from the carrier block S11 is transferred to the transfer module 105 by the transfer arm C1, transferred from here to the arm 66B of the transfer arm A6, and transferred to the stage 21 of the processing module 106. The The wafer W is a wafer that has been developed in the previous process. On the other hand, the solvent holder 3 in which the solvent is absorbed in the storage module 107 is transported to the processing module 106 by the arm 66A of the transport arm A6, and is transferred to the lid 12 of the processing chamber 1. Thus, the processing module 106 performs the surface treatment described above. At this time, since the periphery of the arm 66A is covered with the surrounding member 68, the volatilization of the solvent is suppressed, and the drying of the solvent holder 3 and the release of the solvent into the processing apparatus are prevented.

  Next, the processed wafer W is transferred to the heating module 108 by the arm 66B, and the solvent remaining in the resist pattern is volatilized and removed. Subsequently, the wafer W is transferred to the cooling module 109 by the arm 66B, cooled to a predetermined temperature, transferred to the transfer module 105 by the arm 66B, and returned to, for example, the original carrier 102 by the transfer arm C1.

  Next, a second embodiment of the present invention will be described with reference to FIGS. In the figure, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted. 1A is a processing chamber forming a processing container provided in the processing chamber 70, except that the mechanism for holding the solvent holder 3 on the lid 121, that is, the suction path 15 and the stepped portion 14 are not formed. The configuration is the same as that of the processing chamber 1 of the first embodiment described above. The lid 121 has a processing position when a surface treatment is performed by closing the upper surface opening of the substrate 11 by the elevating mechanism 13, and the lid 12 is on the upper side of the substrate 11. It is configured to be movable up and down with respect to the transfer position when the chamber is transferred. Also in this example, the elevating mechanism 13 corresponds to a mechanism for opening and closing the processing chamber 1.

  In this example, the ceiling member 25 is disposed on the lid 121 so as to face the entire surface of the wafer W on the stage 21, and when the processing chamber 1A is closed, the atmosphere between the wafer W and the saturated vapor of the solvent is changed. It is configured as an evaporation source forming member serving as an evaporation source of a solvent for creating an atmosphere.

  Further, the processing space formed in the processing chamber 1A is configured as a very narrow space so that a saturated vapor atmosphere is easily formed, and the lower surface and the surface of the wafer W on the stage 21 are provided close to each other. The distance is set to about 3 mm. The distance between the outer edge of the wafer W and the inner surface of the side wall of the processing chamber 1A is set to 10 mm, for example.

  The steam generation chamber 7 is provided so as to be aligned in the length direction (X direction) of the processing chamber 1A and the processing chamber 70. The steam generation chamber 7 is a liquid whose upper surface is open and stores a solvent. A reservoir 71 and a lid 72 that closes the opening of the liquid reservoir 71 are configured. The liquid reservoir 71 serves as a solvent supply unit that supplies a solvent to the ceiling member 25 that forms an evaporation source forming member. Further, as will be described later, the liquid reservoir 71 is provided so as to be movable toward the processing chamber 1A. When the liquid reservoir 71 is moved toward the processing chamber 1A, the liquid reservoir 71 is provided above the base 11 respectively. ing.

  Furthermore, the liquid reservoir 71 is configured so that the upper surface opening can be closed by the lid 121 of the processing chamber 1A. For this reason, like the substrate 11 of the processing chamber 1, the planar shape is circular, and the bottom plate 71a and the cylindrical side wall 71b are configured to form a recess therein. The upper surface of the side wall 71b is joined to the lower surface of the side wall 122 of the lid 121 of the processing chamber 1A so that the liquid reservoir 71 and the lid 121 form a hermetically sealed processing space. It has become. The lid 72 of the steam generation chamber 7 is configured to be movable up and down between a position where the upper surface opening of the liquid reservoir 71 is closed and a position where the liquid reservoir 71 is moved by an elevating mechanism 73.

  Further, a heating plate 74 heated by a heater 74a is provided on the upper part of the bottom plate 71a of the liquid reservoir 71, and the upper side of the heating plate 74 is configured as a solvent storage region. In the figure, reference numeral 75 denotes a solvent supply nozzle provided on the lid 72, and one end thereof is connected to the solvent storage section 76 via a supply path 76a provided with a valve V5. When the liquid reservoir 71 is closed by the lid 72, a predetermined amount of liquid solvent, for example, about 100 cc is supplied from the reservoir 76 to the liquid reservoir 71 via the supply path 76a and the supply nozzle 75. It comes to be supplied.

  Further, the liquid reservoir 71 is connected to drive mechanisms 78a and 78b via support members 77a and 77b provided on both sides in the width direction (Y direction in the figure) of the processing chamber 70, respectively. The drive mechanisms 78a and 78b are configured to be movable along guide rails 79a and 79b extending in the length direction from the side of the processing chamber 1A to the side of the steam generation chamber 7, respectively. Thus, the liquid reservoir 71 is configured to be movable between the position on the processing chamber 1 side and the position on the vapor generation chamber 7 side. In this example, the support member 77a, 77b, the drive mechanisms 78a, 78b, and the guide rails 79a, 79b are mounted on the lid 121 from below to condense the solvent on the ceiling member 25, which is an evaporation source forming member. A mechanism for moving the liquid reservoir 71 between the position and the external position of the processing chamber 1A is configured. As a mechanism for moving the drive mechanisms 78a and 78b along the guide rails 79a and 79b, for example, a ball screw mechanism or the like is used.

  In this embodiment, a heating arm mechanism 8 is provided for transferring the wafer W between the processing chamber 1A and a transfer mechanism (not shown) outside the processing chamber 70. The heating arm mechanism 8 is configured such that a heating arm 81 for placing a wafer W is movable along a base 82. The heating arm 81 is provided on the lower side of the steam generation chamber 7 so as not to obstruct the movement of the liquid reservoir 71 and to move forward and backward on the upper side of the substrate 11 of the processing chamber 1A. The heating arm 81 includes a mounting surface 80 that is larger than, for example, the wafer W, and the mounting surface 80 has a notch for moving the heating arm 81 forward and backward in a state that does not hinder the lifting and lowering operation of the push-up pins 24. 80a is formed. The heating arm 81 includes, for example, a heater 81a therein, and the mounting surface 80 is heated to 100 ° C., for example. In FIG. 20, reference numeral 83 denotes a wafer W between the heating arm 81 and the external transfer mechanism when the heating arm 81 is in a standby position (position shown in FIGS. 18 and 19) below the steam generation chamber 7. The lifting pin 83a is a lifting mechanism 83a, and 82a is a through hole for forming a moving region of the lifting pin 83 provided on the base 82. As shown in FIG. 19, in this example, the processing chamber 70 has a transport port 70 a that is accessed by an external transport mechanism on the steam generation chamber 7 side.

  Next, the operation of this embodiment will be described. First, in the vapor generation chamber 7, the valve V5 is opened with the lid 72 closed, and after supplying a predetermined amount of liquid solvent 92 from the supply nozzle 75, the valve V5 is closed and the lid 72 is raised. . Subsequently, the lid 121 of the processing chamber 1A is positioned at the transfer position, the liquid reservoir 71 is slid to the lower side of the lid 121, and then the lid 121 is lowered to open the upper surface of the liquid reservoir 71. Is covered with the lid 121 and mounted on the lid 121 from below, and a sealed processing space S3 is formed between them (see FIG. 21).

  The surface of the heating plate 74 of the liquid reservoir 71 is heated to, for example, 70 ° C. by the heater 74a, while the lower surface of the ceiling member 25 of the lid 121 is heated to a temperature lower than the dew point temperature of the solvent by the temperature adjusting unit 26, for example, 40 ° C. Adjust the temperature so that Thereby, the liquid solvent 92 stored in the liquid reservoir 71 is evaporated by the heat from the heating plate 74 and fills the processing space S3. When the saturation state is exceeded, the ceiling member 25 has a temperature equal to or lower than the dew temperature point, so that condensation of the solvent occurs on the lower surface of the ceiling member 25. Condensation also occurs on the side wall portion of the lid 121. However, since the lower surface of the ceiling member 25 has a lower temperature, the amount of condensation on the ceiling member 25 is larger.

  Thus, after the cover 121 is raised to the transport position in the state where the condensation of the solvent has occurred on the ceiling member 25, the liquid reservoir 71 is slid to the lid 72 side of the steam generation chamber 7, and the liquid reservoir 71. The opening 70 is closed with a lid 72. Here, the heating temperature, heating time, etc. of the heating plate 74 are experimentally performed in advance so that the amount of condensation of the solvent on the ceiling member 25 becomes an amount necessary for forming a saturated vapor atmosphere in the processing chamber 1A described later. Decide.

  On the other hand, in the processing chamber 1A, for example, when the processing space S3 is formed by the liquid reservoir 71 and the lid 121, the wafer W is placed on the stage 21 via the heating arm mechanism 8 by an external transfer mechanism (not shown). Hand over. The transfer of the wafer W to the stage 21 is performed as follows. First, the heating arm 81 of the heating arm mechanism 8 is positioned at the standby position, and the wafer W to be processed is delivered to the heating arm 81 by the cooperative operation of the external transfer mechanism and the push-up pins 83. Next, the heating arm 81 is slid to the processing chamber 1 </ b> A side, and then the push-up pins 24 are lifted to deliver the wafer W to the push-up pins 24. Then, after the heating arm 81 is retracted to the standby position, the push-up pins 24 are lowered to place the wafer W on the stage 21. The wafer W on the stage 21 is heated to a temperature higher than the dew point temperature of the solvent and lower than the boiling point, for example, 50 ° C.

  Subsequently, the base 11 is closed with a lid 121 to form a sealed processing space S4 in the processing chamber 1A (see FIG. 18). The temperature adjustment mechanism 26 adjusts the lower surface of the ceiling member 25 to a temperature lower than the wafer W on the stage 21, for example, 40 ° C. When the inside of the processing chamber 1A is sealed, the solvent condensed on the lower surface of the ceiling member 25 evaporates due to the heat of the ceiling member 25 and the stage 21, and fills the processing space S4. At this time, since the ceiling member 25 and the wafer W on the stage 21 are close and narrow in the processing chamber 1A, the solvent in the processing chamber 1A is evaporated in the processing chamber 1A by evaporation of the solvent condensed on the lower surface of the ceiling member 25. A saturated steam atmosphere is formed. As a result, the wafer W on the stage 21 is exposed to a stable high-concentration solvent vapor. At this time, since the wafer W is heated to a temperature higher than the dew point of the solvent and lower than the boiling point, solvent molecules collide with the surface layer portion of the pattern mask and the pattern surface swells with the solvent. It does not penetrate deep inside and volatilizes again. Thus, in the said pattern mask, only a surface layer part swells with a solvent, the fine unevenness | corrugation of a pattern surface is planarized, and the roughness of the surface of a pattern mask is improved.

  Thus, after performing the surface treatment for a predetermined time in the processing chamber 1A, the lid 121 is raised, and the wafer W is received from the stage 21 to the heating arm 81 by the cooperative operation with the push-up pins 24 as shown in FIG. hand over. Then, after the heating arm 81 is slid to the standby position, the wafer W is transferred to an external transfer mechanism by the cooperative operation with the push-up pins 83, and the wafer W is unloaded via the transfer port 70a.

  In addition, the wafer W on which the surface treatment has been performed is held in the heating arm 81, and the step of positioning the wafer W at the standby position and the step of performing the surface treatment in the processing chamber 1A may be repeated. Good. In this case, while the wafer W is on standby on the heating arm 81, the liquid reservoir 71 supplied with the solvent is moved again to the processing chamber 1A side to cause condensation of the solvent on the lower surface of the ceiling member 25. Then, the wafer W is again carried into the processing chamber 1A and the surface treatment of the wafer W is performed. Such standby of the wafer W on the heating arm 81, supply of the solvent by the liquid reservoir 71 into the processing chamber 1A, and surface treatment of the wafer W in the processing chamber 1A are repeated a plurality of times. You may do it.

  According to this embodiment, the solvent is supplied into the processing chamber 1A by condensing the solvent on the ceiling member 25 (evaporation source forming member) of the processing chamber 1A. Is supplied with high in-plane uniformity. That is, since dew condensation occurs on the entire lower surface of the ceiling member 25, the solvent evaporates almost uniformly from the entire surface of the ceiling member 25. For this reason, since the solvent vapor is supplied from the upper side almost simultaneously to the entire surface of the wafer W, the solvent vapor is supplied with a high in-plane uniformity. Thereby, in the surface of the wafer W, the surface treatment proceeds with high uniformity, the surface roughness of the pattern mask is improved, and the pattern shape is corrected. Since the pattern shape is corrected in this manner, the occurrence of variations in the pattern line width can be suppressed and the LWR can be improved when performing the etching process in the subsequent process.

  At this time, as described above, condensation of the solvent also occurs on the side wall portion of the lid 121 of the processing chamber 1A. However, the condensation amount of the ceiling member 25 is much larger than the condensation amount of the side wall. Further, since the side wall is separated from the wafer W, even if the solvent condensed on the side wall evaporates, the solvent vapor evaporated from the dew condensation on the lower surface of the ceiling member 25 is supplied. There is no risk of disturbing.

  In addition, since the wafer W is adjusted to a temperature higher than the dew point temperature and lower than the boiling point, the fluidity of the resist polymer is increased by the combination of the swelling of the surface layer portion of the pattern mask and heat, so that the improvement process The time required can be shortened.

  Further, the wafer W after the surface treatment is transferred by the heating arm 81. Since the mounting surface 80 is heated to a temperature higher than the dew point of the solvent, the heating arm 81 is absorbed by the resist pattern during the transfer. The solvent is volatilized. Thereby, permeation of the solvent into the pattern can be suppressed, and unnecessary dissolution of the resist can be suppressed.

  Furthermore, by alternately repeating the standby on the heating arm 81 and the surface treatment in the processing chamber 1A, the solvent is slightly absorbed on the surface of the pattern mask, and unnecessary solvent is volatilized immediately. This can be done repeatedly. As a result, the roughness of the surface of the pattern mask can be gradually improved, so that the surface treatment can be performed while suppressing unnecessary dissolution of the pattern. In addition, depending on the resist pattern, even when the amount of solvent vapor generated in one processing chamber 1A is not sufficient for improving the surface roughness, the surface treatment of the pattern mask is repeated. Therefore, it is possible to secure a sufficient amount of solvent vapor generated for the surface treatment in total.

  Subsequently, another example of the second embodiment will be described with reference to FIGS. 23 to 25. The other examples are also the same as those in the first embodiment and the second embodiment. The components are denoted by the same reference numerals and description thereof is omitted. In this example, a mounting table 85 having a heating mechanism is provided instead of the heating arm mechanism 8 of the second embodiment. As shown in FIGS. 24 and 25, the processing chamber 1A and the steam generation chamber 7 are processed along the guide rail 79b by the drive mechanism 78b via the support member 77b provided with the liquid reservoir 71 on one side. The apparatus is configured in the same manner as the apparatus of the second embodiment shown in FIGS. 18 to 23 except that it moves in the length direction (X direction).

  The mounting table 85 includes a heating plate 86 for mounting and heating the wafer W inside the storage container 85a. The heating plate 86 is larger than the wafer W, and the surface of the heating plate 86 is heated to a temperature higher than the dew point temperature of the solvent, for example, 100 ° C., for example, by a heater 86 a provided therein. The mounting table 85 is provided, for example, so as to be aligned in the length direction of the processing chamber 1A and the processing chamber 70, and for example, the stage 21 of the processing chamber 1A so as not to hinder the movement of the liquid reservoir 71 toward the processing chamber 1A. And the height position of the upper surface of the heating plate 86 of the mounting table 85 are provided so as to be aligned. The wafer W is transferred to the mounting table 85 with an external transfer mechanism (not shown) by a push-up pin 83.

  Wafer W is transferred by wafer transfer mechanism 87 between stage 21 of processing chamber 1A and heating plate 86 of mounting table 85. The wafer transfer mechanism 87 includes an elongated plate-like holding arm 88 that holds the central portion on the back surface side of the wafer W. The shape of the holding arm 88 is set so that when the wafer W is pushed up by the push-up pins 24, 83, the holding arm 88 can enter between the push-up pins 24, 83 from the side. In addition, the holding arm 88 is configured to be movable back and forth in the width direction (Y direction) of the processing chamber 70 along the base 88 a, and the base 88 a is a guide provided in the length direction of the processing chamber 70. The drive mechanism 88c is configured to be movable along the rail 88b. As a mechanism for moving the drive mechanism 88c along the guide rail 88b, for example, a ball screw mechanism or the like is used.

  The holding arm 88 has a suction hole 89 on its upper surface, and when holding the wafer W, the holding mechanism 88 is evacuated by the evacuation mechanism 89a through the exhaust path 89b provided with the valve V5, and the back side of the wafer W is sucked and held. It is comprised so that. Here, when the holding arm 88 moves forward, the suction hole 89 corresponds to the vicinity of the central portion on the back surface side of the wafer W, and when the holding arm 88 moves backward, the tip of the holding arm 88 is positioned outside the push-up pins 23 and 83 (on the base 88a side). Thus, the push-up pins 23 and 83 are configured not to hinder the raising and lowering operations.

  The wafer transfer mechanism 87 is normally located at a standby position between the processing chamber 1A and the mounting table 85, as shown in FIGS. The holding arm 88 is configured to move above the stage 21 of the processing chamber 1A and the heating plate 86 of the mounting table 85 (see FIG. 25). Other configurations are the same as those of the apparatus according to the second embodiment.

  In this example, the wafer W is transferred to the inside of the processing chamber 70 via the transfer port 70 a by an external transfer mechanism, and mounted on the heating plate 86 of the mounting table 85 in cooperation with the push-up pins 83. When the wafer W is transferred from the mounting table 85 to the stage 21 of the processing chamber 1A, first, the push-up pin 83 is moved up and down to float the wafer W from the heating plate 86, while the holding arm 88 is moved along the base 88a. In the state of being retracted, the slide arm is slid from the standby position to a position where the holding arm 88 can enter between the push-up pins 83.

  Next, the holding arm 88 is inserted between the push-up pins 83, and then the push-up pins 83 are lowered to deliver the wafer W onto the holding arms 88. In this way, the holding arm 88 is moved to the upper side of the stage 21 of the processing chamber 1A while the wafer W is sucked and held by the holding arm 88. This position is a position where the holding arm 88 enters between the push-up pins 24 when the push-up pins 24 are raised. Thereafter, by raising the push-up pins 24, the wafer W is delivered from the holding arm 88 to the push-up pins 24, and then the push-up pins 24 are lowered to deliver the wafer W to the stage 21. While the holding arm 88 is moving, the valve V6 is opened to continue the exhaust from the exhaust mechanism 89a. However, when the hold arm 88 is stopped, the valve V6 is closed and the exhaust by the exhaust mechanism 89a is stopped to adsorb the wafer W. Cancel.

  On the other hand, in accordance with the loading of the wafer W, the liquid reservoir 71 is moved to the processing chamber 1A side, and the processing for condensing the solvent on the ceiling member 25 of the processing chamber 1A is performed as described above. Then, as described above, surface processing is performed on the wafer W in the processing chamber 1A.

  Thereafter, the surface-treated wafer W is transferred from the stage 21 to the mounting table 85 by the holding arm 88 and heated by the mounting table 85 as shown in FIG. The solvent is volatilized and removed. Next, the wafer W on the mounting table 85 is transferred to the outside of the processing chamber 70 by an external transfer mechanism or is transferred again into the processing chamber 1A, and the surface treatment is repeatedly performed.

  Also in this example, similarly to the second embodiment described above, processing with high in-plane uniformity can be performed, and the solvent can be absorbed only in the surface layer portion of the resist pattern by suppressing the dissolution of the resist pattern. it can. Thereby, the roughness of the resist pattern can be reduced and the LWR can be improved.

  In the above, in the substrate processing apparatus shown in FIGS. 18 and 23, the wafer W is at a temperature higher than the dew point temperature of the solvent in the saturated vapor atmosphere before the process of setting the inside of the processing chamber 1A to the saturated vapor atmosphere of the solvent. The supply of the solvent to the lid 121 of the processing chamber 1A and the placement of the wafer W on the stage 21 of the processing chamber 1A may be performed almost simultaneously, or the lid may be heated. The wafer W may be mounted after the solvent is supplied to 121, or the solvent may be supplied after the wafer W is mounted.

  The substrate processing apparatus of the second embodiment can also be incorporated in the shelf unit U1 of the resist pattern forming apparatus shown in FIGS. Further, the substrate processing apparatus of the second embodiment may be incorporated into the processing apparatus dedicated to surface processing shown in FIGS. FIG. 27 is a plan view of the processing apparatus, and FIG. 28 is a longitudinal sectional view of the processing apparatus. The same components as those in the resist pattern forming apparatus described above are denoted by the same reference numerals and description thereof is omitted. . In the figure, S12 is a carrier block, so that the wafer W is transferred by the transfer arm C2 between the carrier 102 on the mounting table 101 and the transfer module 202 provided in the block S13 or the processing block S23. It is configured. The transfer arm C2 is configured to be movable forward and backward, rotatable, movable up and down, and movable in the Y direction in FIG.

  In the processing block S22 provided adjacent to the carrier block S12, the shelf unit U5 in which processing modules 203 for surface processing the wafers W are provided in multiple stages, and the wafer W after the surface processing are subjected to heat processing. There is provided a shelf unit U6 in which a heating module 204 to be performed and a cooling module 205 for performing a cooling process on the wafer W after the heating process are provided in multiple stages. In this shelf unit U6, for example, modules are arranged along the arrangement direction of carriers 102 (Y direction in FIG. 27). As the processing module 203, the substrate processing apparatus shown in FIG. 18 and the substrate processing apparatus shown in FIG. 23 are incorporated.

  The processing block S22 is provided with a transfer arm A7 for transferring the wafer W between the modules of the shelf units U5 and U6 and the transfer module 202. In this example, the transfer arm A7 is configured such that, for example, an arm 206 that holds a part of the peripheral region of the wafer W can be moved forward and backward along the base 207, and the base 207 can move up and down and rotate around a vertical axis. It is configured to be freely movable along the Y direction along a guide rail (not shown). In this example, the processing chamber 1A of the processing module 203 is configured to be disposed on the carrier block S12 side, and the wafer W is transferred to the heating arm mechanism 8 and the mounting table 85 by the transfer arm A7.

  In such an apparatus, the wafer W from the carrier block S12 is transferred to the transfer module 202 by the transfer arm C2, received from the transfer arm A7, and transferred to the processing module 203. The wafer W is a wafer that has been developed in the previous process. The surface treatment described above is performed in the processing module 203, and the wafer W placed on the heating arm mechanism 8 or the mounting table 85 is transferred to the heating module 204 by the transfer arm A7, and the solvent remaining in the resist pattern is removed. Volatilized and removed. Thereafter, the wafer W is transferred to the cooling module 205 by the transfer arm A7 and cooled to a predetermined temperature, for example, about room temperature. Then, it is transported to the delivery module 202 by the transport arm A7 and returned to, for example, the original carrier 102 via the delivery arm C2.

  29 is an example in which a substrate processing apparatus 210 having a configuration in which processing chambers 1A are provided on both sides of one vapor generation chamber 7 is incorporated. In the figure, S13 is a carrier block. In this block S13, the wafer W is transferred by the transfer arm C3 between the carrier 102 on the mounting table 101 and the transfer module 211 provided in the block S13 or the processing block S23. Is done. The delivery arm C3 is configured to be movable forward and backward, rotatable, movable up and down, and movable in the Y direction in FIG.

  In the processing block S23 provided adjacent to the carrier block S13, a processing module 210 for performing a surface treatment on the wafer W, a heating module for performing a heat treatment on the wafer W after the surface treatment, and a post-heating treatment A shelf unit U7 provided with multiple cooling modules for performing a cooling process on the wafer W is provided.

  The processing module 210 in this example includes two processing chambers 1A and one steam generation chamber 7, which are in the carrier arrangement direction (Y direction in FIG. 29) with the steam generation chamber 7 in between. They are arranged in a line. The liquid reservoir 71 of the steam generation chamber 7 is configured to be movable in the lower region of the lid 121 of the two processing chambers 1A along the guide rails 211 and 212 extending in the Y direction.

  Further, the processing block S23 is provided with a transfer arm A8 for transferring the wafer W between each module of the shelf unit U7 and the delivery module 211. In this example, the transfer arm A8 is configured such that, for example, an arm 213 that holds a part of the peripheral area of the wafer W can be moved forward and backward along the base 214, and the base 2214 can be moved up and down, and rotates about a vertical axis. It is configured to be freely movable along the Y direction along a guide rail (not shown). In this example, the wafer W is transferred to the heating arm mechanism 8 below the steam generation chamber 7 and the mounting table 85 by the transfer arm A8. The shelf unit U7 is provided with processing modules 210 in multiple stages, and a plurality of heating modules and cooling modules.

  In such an apparatus, the wafer W from the carrier block S13 is transferred to the transfer module 211 by the transfer arm C3, transferred from the transfer module A8 by the transfer arm A8, and transferred to the processing module 210. The surface treatment described above is performed in the processing module 210, and the wafer W placed on the heating arm mechanism 8 or the mounting table 85 is transferred to the heating module by the transfer arm A8, and the solvent remaining in the resist pattern is volatilized. To be removed. Thereafter, the wafer W is transferred to the cooling module by the transfer arm A8 and cooled to a predetermined temperature, for example, about room temperature. Then, it is transported to the delivery module 211 by the transport arm A8 and returned to, for example, the original carrier 102 via the delivery arm C3.

  As described above, in the processing chamber 1 in the apparatus of the first embodiment, the processing chamber 1 is closed by the lid body 12 holding the solvent holder 3, and the wafer W on the stage 21 is set to a temperature higher than the dew point temperature of the solvent. If heated, the solvent absorbed in the solvent holder 3 is evaporated by this heat, and a saturated vapor atmosphere is formed. For this reason, it is not always necessary to provide a temperature control mechanism on the ceiling member 25 provided on the lid 12.

  Further, in the processing chamber 1A in the apparatus of the second embodiment, when the solvent is condensed on the lower surface of the ceiling member 25 by the liquid reservoir 71, if the temperature of the ceiling member 25 is adjusted to a temperature equal to or lower than the dew point, Condensation is likely to occur, but condensation occurs when the temperature of the ceiling member 25 is lower than the temperature of the heating plate 74. Therefore, it is not always necessary to adjust the temperature of the ceiling member 25 below the dew point temperature. Further, if the processing chamber 1A is closed by the lid 121 and the wafer W on the stage 21 is heated to a temperature higher than the dew point temperature of the solvent, the solvent absorbed in the ceiling member 25 is evaporated by this heat and saturated. A vapor atmosphere is formed. Therefore, it is not always necessary to provide the temperature control mechanism in the ceiling member 25 from this point. The surface treatment of the present invention can be applied to substrates such as FPD (Flat Panel Display) glass substrates and lithography mask substrates other than the semiconductor wafer W.

  By the way, the pattern mask formed on the surface of the wafer W gradually swells as the process proceeds, and the softness increases. Since the pattern is liable to dissolve or fall down when it is excessively swollen, a process for preventing such a problem more reliably will be described. FIG. 30 shows a processing chamber 10 for performing this processing. The processing chamber 10 has substantially the same configuration as that of the processing chamber 1. The difference is that the peripheral portion of the lid 12 protrudes downward to form an annular portion 27, and the processing chamber 10 is closed by the lifting mechanism 13. Furthermore, the upper peripheral edge of the base 11 is surrounded by the annular portion 27. As will be described later, the annular portion 27 partitions the processing chamber 10 from the outside so that the processing chamber 10 is sealed and a saturated vapor atmosphere of the solvent is maintained therein even when the lid 12 is raised. Have a role to play.

  The processing using the processing chamber 10 will be described. After the wafer W is placed on the stage 21 when the lid 12 is in the raised position as described in each embodiment, for example, as shown in FIG. The lid 12 is lowered to a position where the frame body 32 of the tool 3 is in contact with the side wall portion 11a of the base 11, and a saturated vapor atmosphere of a solvent is formed in the lower space S2 to process the wafer W. When a preset time elapses after the lid 12 is lowered, the lid 12 is gradually raised by the elevating mechanism 13 as shown in FIG. 31, for example. As a result, the height of the lower space S2 is increased, the radiant heat from the wafer W and the stage 21 to the solvent holder 3 is reduced, and the evaporation amount of the solvent from the solvent holder 3 is gradually reduced. The amount of solvent to be reduced is reduced. When the lid body 12 continues to rise, the lower space S2 is opened to the outside (the space in the processing chamber 18), and the processing ends.

  By such a process, the solvent supply amount to the wafer W can be reduced in the second half of the process compared to the first half, thereby more reliably reducing the risk of pattern collapse and pattern dissolution as described above. And variations in dimensions (CD) due to the roughness can be improved. Further, since this method is also used as an operation of opening the lid 12 to take out the wafer W from the processing chamber 11, there is an advantage that it is possible to suppress an increase in processing time. This technique can be applied to each of the above embodiments.

  In this method, in the second half of the process, the lid 12 only needs to be separated from the stage 21 and the wafer W heated by the heater 22 as compared with the first half of the process. Therefore, the lid 12 is temporarily stopped at the position shown in FIG. It may be lifted from the top or may continue to rise without being stationary. Alternatively, the lid 12 may be raised once again after being stopped. Further, instead of moving the lid 12 up and down in this way, the base 11 may be moved up and down by connecting the lifting mechanism 13 to the base 11.

W Wafer 1, 1A Processing chamber 11 Base body 12, 121 Cover body 21 Heating plate 22 Heating heater 25 Ceiling member 3 Substrate holder 31 Absorber 32 Frame body 4 Storage section 5 Supply nozzle 6 Holder transport mechanism 61, 62 Arm 7 Steam Generation chamber 71 Liquid reservoir 72 Lid 8 Heating arm mechanism 82 Heating arm 85 Mounting table 87 Wafer transfer mechanism

Claims (13)

In an apparatus for performing processing to improve the roughness of the pattern mask on a substrate on which a pattern mask is formed by exposure and development processing,
An openable and closable processing container configured to be vertically divided into a lid and a base,
An opening and closing mechanism for opening and closing the processing container;
A stage provided on the base for mounting the substrate;
A heating unit for heating the substrate placed on this stage to a temperature higher than the dew point temperature of the solvent;
The lid is disposed so as to face the entire surface of the substrate on the stage, and becomes a solvent evaporation source for making the atmosphere between the substrate and the substrate a saturated vapor atmosphere when the processing container is closed. A substrate processing apparatus comprising: an evaporation source forming member.   The substrate processing apparatus according to claim 1, further comprising a solvent supply unit configured to supply a solvent to the evaporation source forming member. The evaporation source forming member is detachably provided on the lid,
A holding unit that is provided outside the processing container and holds the evaporation source forming member; and a transfer mechanism that transfers the evaporation source forming member from the holding unit to the lid and attaches the same. ,
The substrate processing apparatus according to claim 2, wherein the solvent supply unit is provided in the holding unit.   4. The substrate processing apparatus according to claim 1, wherein the evaporation source forming member is a porous body. The solvent supply part is a liquid reservoir part whose upper surface is opened and stores a solvent,
A mechanism for moving the liquid reservoir between a position where the lid is mounted from the lower side and an external position of the processing container in order to condense the solvent on the evaporation source forming member; The substrate processing apparatus according to claim 2. The opening / closing mechanism includes an elevating mechanism for elevating the lid relative to the base body,
The elevating mechanism lowers the lid relative to the base and positions the first position in order to perform processing on the substrate placed on the stage while forming the saturated vapor atmosphere. Then, in order to reduce the radiant heat from the substrate to the evaporation source forming member and continue the process, the substrate is raised relative to the base and positioned at a second position farther from the base than the first position. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a substrate processing apparatus. In a method of performing processing for improving the roughness of the pattern mask on a substrate on which a pattern mask is formed by exposure and development processing,
Using an openable and closable processing container configured to be vertically split into a lid and a base,
Opening the processing vessel;
Next, a step of placing a substrate on a stage provided on the substrate;
The process vessel is closed and the evaporation source forming member is positioned so as to face the entire surface of the substrate on the stage to evaporate the solvent from the evaporation source forming member, and between the evaporation source forming member and the substrate. A step of setting the atmosphere to a saturated vapor atmosphere of a solvent;
And a step of heating the substrate to a temperature higher than the dew point temperature of the solvent in the saturated vapor atmosphere before this step.   8. The substrate processing method according to claim 7, further comprising a step of supplying a solvent to the evaporation source forming member.   9. The substrate processing method according to claim 8, wherein the evaporation source forming member is supplied with a solvent outside the processing container, and then transferred and mounted on the lid.   The substrate processing method according to claim 7, wherein the evaporation source forming member is a porous body. The solvent supply part is a liquid reservoir part whose upper surface is opened and stores a solvent,
Carrying the liquid reservoir from the outside of the processing container and attaching the lid to the lid from the lower side, and condensing the solvent on the evaporation source forming member; and
The substrate processing method according to claim 8, further comprising a step of retracting the liquid reservoir from the lower side of the lid body to the outside of the processing container. Lowering the lid relative to the substrate to form a saturated steam atmosphere and performing processing on the substrate placed on the stage, and positioning the first position;
In order to continue the process by reducing the radiant heat from the substrate to the evaporation source forming member, the lid body is raised relative to the base body, and the second position is further away from the base body than the first position. A step of positioning in
The substrate processing apparatus according to claim 7, further comprising: A storage medium storing a computer program that operates on a computer and is used in an apparatus that performs processing to improve the roughness of the pattern mask on a substrate on which a pattern mask has been formed by exposure and development. ,
A storage medium, wherein the computer program includes steps so as to implement the method according to any one of claims 7 to 12.

Images