JP2012195417A - Method of manufacturing semiconductor device and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent reduction in the reliability of a resin-sealed semiconductor device.SOLUTION: In a semiconductor device, a cap (member) 2 and a cap (member) 5 having a cavity part (space formation part) 5d are superimposed and bonded together to form a sealed space 8, and a sensor chip (semiconductor chip) 1 and a plurality of wires 4 are disposed in the space 8. The semiconductor device is manufactured as follows: in a sealing step of sealing a joint part between the cap 2 and the cap 5, a sealant 9 composed of a resin is formed such that the entirety of an upper surface 5a of the cap 5 and the entirety of a lower surface 2b of the cap 2 are respectively exposed. Thus, in the sealing step, the pressure acting in the direction of crushing the cap 5 can be decreased.

Description

  The present invention relates to a semiconductor device and a manufacturing technique thereof, and more particularly to a technology effective when applied to a semiconductor device in which a sensor chip is covered with a sealing body made of a resin.

  Japanese Patent Laid-Open No. 2006-237405 (Patent Document 1) discloses a dam arranged so as to surround an element function unit, a cap joined to the dam to form a gap inside, and the periphery of the dam and the cap are sealed. An electronic component device comprising a sealing resin is described.

  Japanese Unexamined Patent Application Publication No. 2007-19154 (Patent Document 2) describes a semiconductor device including a sound pressure sensor chip (semiconductor chip). According to Patent Document 1, a semiconductor chip mounted on a stage portion is covered with a chip cover lid, and the semiconductor chip is disposed in a cavity in the chip cover lid. Then, the chip covering lid is covered with the resin mold portion, and the stage portion and the chip covering lid are fixed integrally. At this time, a structure in which a part of the chip covering lid is exposed from the resin mold portion is described.

JP 2006-237405 A JP 2007-19154 A

  As a package mode of a semiconductor device, there is a package in which a space is formed in a sealed body and a semiconductor chip such as a sensor chip is arranged in the space. For such a package, a so-called ceramic package using ceramic as a sealing body is generally used. The inventor of the present application has studied a resin-encapsulated semiconductor device (plastic package) using a resin such as a resin resin as a sealing body in order to reduce the manufacturing cost as compared with a ceramic package, and found the following problems.

  In a resin-encapsulated semiconductor device, when a semiconductor chip, which is a sensor chip, is mounted in a sealed body, if the sealed body is in contact with the sensor chip, the influence of stress generated on the sealed body due to the use environment is affected. Since it is transmitted to the sensor chip, the reliability (detection characteristics and electrical characteristics) of the sensor chip and the semiconductor device may be reduced. Therefore, as in Patent Document 1 and Patent Document 2, a method of forming a space in the sealed body with a cap material and mounting a sensor chip in the space is effective.

  However, in the configuration described in Patent Document 1 and Patent Document 2, in the sealing process for forming a sealing body made of resin, the cap material removes pressure from the resin (supply pressure and voids are removed). It was found that it was crushed in the direction of the space surrounded by the cap material. When the cap material is crushed and the cap material contacts the sensor chip or the wire connected to the sensor chip, the reliability (detection characteristics and electrical characteristics) of the sensor chip and the semiconductor device is reduced. In addition, even when the sensor chip and the cap material do not come into contact with each other, when the sealing property of the space in the sealed body is impaired due to the deformation of the cap material, a part of the sealed body enters the space, This may cause contact with the sensor chip. That is, it has been found that a decrease in reliability of the sensor chip and the semiconductor device cannot be sufficiently suppressed.

  In addition, in order to improve the strength of the cap material, the inventor of the present application has also studied a configuration in which the thickness of the cap material is increased. In this case, it is difficult to process the cap material. Further, if the cap material is thick, it becomes difficult to meet the recent demand for thinning the semiconductor device.

  The present invention has been made in view of the above problems, and an object thereof is to provide a technique for suppressing a decrease in reliability of a resin-encapsulated semiconductor device.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  That is, the method for manufacturing a semiconductor device which is one embodiment of the present invention includes the following steps. (A) A step of preparing a first member having a first upper surface and a first lower surface opposite to the first upper surface is included. And (b) mounting a semiconductor chip having a surface, a plurality of electrode pads formed on the surface, and a back surface opposite to the surface on the first upper surface of the first member. . And (c) electrically connecting the plurality of electrode pads of the semiconductor chip and the plurality of terminals disposed on the first upper surface of the first member through a plurality of wires, respectively. It is out. (D) after the step (c), a second member having a second upper surface, a second lower surface opposite to the second upper surface, and a space forming portion formed on the second lower surface side; A semiconductor chip and an adhesive surface provided on the first upper surface of the first member so that the plurality of wires are positioned in the space forming portion, and provided on the outside of the space forming portion of the second member; A step of adhering the first upper surface of the first member with a sealing material. (E) After the step (d), the second member and the first member are exposed so that the entire second upper surface of the second member and the entire first lower surface of the first member are exposed. The process of sealing the junction part of this is included.

  The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

  That is, according to one embodiment of the present invention, it is possible to suppress a decrease in reliability of the resin-encapsulated semiconductor device.

It is a top view which shows the surface side of the sensor chip which the semiconductor device which is one embodiment of this invention has. It is sectional drawing along the AA line of FIG. It is sectional drawing along the BB line of FIG. It is a top view which shows the upper surface side of the semiconductor device which is one embodiment of this invention. FIG. 5 is a plan view showing a lower surface side of the semiconductor device shown in FIG. 4. It is sectional drawing along CC line of FIG. It is sectional drawing along the DD line of FIG. FIG. 5 is a plan view showing a planar structure inside the sealing body of the semiconductor device shown in FIG. 4. It is an enlarged plan view of the E section of FIG. It is explanatory drawing which shows the assembly flow of the semiconductor device which is one embodiment of this invention. FIG. 11 is a plan view showing the overall structure of the lead frame prepared in the lead frame preparation step shown in FIG. 10. FIG. 12 is an enlarged plan view around one product formation region among the plurality of product formation regions shown in FIG. 11. It is an expanded sectional view along the FF line of FIG. FIG. 13 is an enlarged plan view showing a state in which a semiconductor chip (control chip) is mounted on the cap shown in FIG. 12 via an adhesive. It is an expanded sectional view along the GG line of FIG. FIG. 15 is an enlarged plan view showing a state where a semiconductor chip (sensor chip) is mounted on the control chip shown in FIG. 14 via an adhesive. It is an expanded sectional view along the GG line of FIG. FIG. 17 is a plan view showing a state where the semiconductor chip shown in FIG. 16 and a plurality of leads are electrically connected via wires. It is an expanded sectional view along the GG line of FIG. FIG. 19 is an enlarged plan view illustrating a state in which another cap is overlapped and fixed on the cap illustrated in FIG. 18. It is an expanded sectional view along the GG line of FIG. It is an expanded sectional view along the HH line of FIG. FIG. 23 is an enlarged plan view showing a state in which a sealing material is applied on the cap and the plurality of leads shown in FIG. It is an expanded sectional view of FIG. 23 corresponding to the cross section along the HH line of FIG. FIG. 21 is an enlarged plan view showing a state where a sealing body is formed in the product formation region of the lead frame shown in FIG. 20. It is an expanded sectional view along the FF line of FIG. It is an expanded sectional view which shows the state which supplies resin for sealing in the cavity of a shaping die in the cross section along the FF line shown in FIG. FIG. 26 is an enlarged cross-sectional view showing a state in which a sealing resin is supplied into the cavity of the molding die in the cross section taken along the line II shown in FIG. 25. It is an enlarged plan view which shows the state which cut | disconnected the dam part shown in FIG. FIG. 30 is an enlarged plan view showing a state where the outer lead portion shown in FIG. 29 is cut and molded. FIG. 31 is an enlarged plan view showing a state in which the product forming region shown in FIG. 30 is separated from the frame portion of the lead frame and separated into pieces. FIG. 30 is an enlarged cross-sectional view showing a state in which an exterior plating film is formed on the exposed surfaces of the plurality of leads exposed from the sealing body and the back-side cap in the cross section taken along the line FF shown in FIG. 29. FIG. 6 is a plan view showing a lower surface side of a semiconductor device which is a modified example with respect to FIG. 5. It is sectional drawing along CC line of FIG. It is sectional drawing along the DD line of FIG. FIG. 34 is a plan view showing a planar structure on the upper surface side inside the sealing body of the semiconductor device shown in FIG. 33; FIG. 36 is a cross-sectional view showing a modification of the semiconductor device shown in FIG. 35. FIG. 39 is an enlarged plan view showing a modification to FIG. 12, and FIG. 39 is a cross-sectional view taken along line FF in FIG. It is sectional drawing along the FF line of FIG. It is an expanded sectional view which shows the modification with respect to FIG. FIG. 11 is an enlarged cross-sectional view showing a state in which a front-side cap is attached to the lead frame after the wire bonding step shown in FIG. 10. FIG. 42 is an enlarged cross-sectional view showing a state where the top and bottom of the lead frame shown in FIG. 41 are reversed. It is an expanded sectional view which shows the modification with respect to FIG. FIG. 5 is a plan view showing a semiconductor device which is a modified example with respect to FIG. 4. FIG. 7 is a cross-sectional view illustrating a semiconductor device which is a modification example of FIG. 6. It is a top view which shows the surface side of the sensor chip which is a modification with respect to FIG. It is sectional drawing along the AA line of FIG. It is a modification with respect to FIG. 21, and is the state expanded sectional view which mounted the support part on the cap. It is an expanded sectional view which shows the state which apply | coated the adhesive material on the support part shown in FIG. It is an expanded sectional view which shows the state which mounted the transparent part on the support part shown in FIG. It is sectional drawing which shows the semiconductor device which is a modification with respect to FIG. FIG. 7 is a cross-sectional view illustrating a semiconductor device which is a modification example of FIG. 6. FIG. 7 is a cross-sectional view showing a semiconductor device which is another modified example with respect to FIG. 6. FIG. 46 is a cross-sectional view showing a semiconductor device which is a modification example of FIG. 45. FIG. 55 is a cross-sectional view showing a semiconductor device that is a modification example of FIGS. 6, 45, 52, 53, and 54. FIG. 35 is a cross-sectional view showing a semiconductor device which is a modification to FIG. 34. It is an expanded sectional view which shows the comparative example with respect to FIG. FIG. 46 is a cross-sectional view of a semiconductor device which is a comparative example with respect to FIG. 45.

(Description format, basic terms, usage in this application)
In the present application, the description of the embodiment will be divided into a plurality of sections for convenience, if necessary, but these are not independent from each other unless otherwise specified. Regardless of the front and rear, each part of a single example, one is a part of the other, or a part or all of the modifications. In principle, repeated description of similar parts is omitted. In addition, each component in the embodiment is not indispensable unless specifically stated otherwise, unless it is theoretically limited to the number, and obviously not in context.

  Similarly, in the description of the embodiment, etc., regarding the material, composition, etc., “X consisting of A” etc. is an element other than A unless specifically stated otherwise and clearly not in context. It does not exclude things that contain. For example, as for the component, it means “X containing A as a main component”. For example, “silicon member” is not limited to pure silicon, but includes a SiGe (silicon-germanium) alloy, other multi-component alloys containing silicon as a main component, and other additives. Needless to say, it is also included. Moreover, even if it says gold plating, Cu layer, nickel / plating, etc., unless otherwise specified, not only pure materials but also members mainly composed of gold, Cu, nickel, etc. Shall be included.

  In addition, when a specific number or quantity is mentioned, a numerical value exceeding that specific number will be used unless specifically stated otherwise, unless theoretically limited to that number, or unless otherwise clearly indicated by the context. There may be a numerical value less than the specific numerical value.

  Moreover, in each figure of embodiment, the same or similar part is shown with the same or similar symbol or reference number, and description is not repeated in principle.

  In the accompanying drawings, hatching or the like may be omitted even in a cross section when it becomes complicated or when the distinction from the gap is clear. In relation to this, when it is clear from the description etc., the contour line of the background may be omitted even if the hole is planarly closed. Furthermore, even if it is not a cross section, hatching or a dot pattern may be added in order to clearly indicate that it is not a void or to clearly indicate the boundary of a region.

(Embodiment 1)
In this embodiment, as an example of a semiconductor device in which a space is formed in a sealed body and a semiconductor chip is arranged in the space, a semiconductor called MEMS (Micro Electro Mechanical Systems) is formed in the space formed in the sealed body. A semiconductor device on which a sensor chip (semiconductor sensor chip) formed using a microfabrication technique is mounted will be described.

<Structure of semiconductor chip (semiconductor sensor chip)>
First, the structure of a semiconductor chip (sensor chip) included in the semiconductor device of the present embodiment will be described with reference to FIGS. 1 is a plan view showing the surface side of a sensor chip included in the semiconductor device of the present embodiment, FIG. 2 is a cross-sectional view taken along the line AA in FIG. 1, and FIG. 3 is a line BB in FIG. FIG.

  The semiconductor chip of this embodiment is a sensor chip 1 formed by MEMS technology. The sensor chip 1 formed by the MEMS technology has a movable part and an electric circuit part (sensor circuit) that converts the movement of the movable part into an electric signal and transmits the electric signal. For example, various sensors such as an acceleration sensor and an angular velocity sensor can be used. It is available for use. In this embodiment, a piezoresistive acceleration sensor will be described as an example of a sensor chip. The sensor chip 1 is formed by utilizing a microfabrication technique used when manufacturing a semiconductor integrated circuit device such as a photolithography technique or an etching technique, for example, so that a sensor having a mechanically movable part can be reduced in size. There are advantages. For example, in the sensor chip 1 of the present embodiment, the planar shape of the surface 1a is a square, and the length of each side is, for example, about 1 mm to 10 mm.

  The sensor chip (semiconductor chip) 1 of the present embodiment has a front surface (main surface) 1a, a back surface (main surface) 1b located on the opposite side of the front surface 1a, and a side surface 1c positioned between the front surface 1a and the back surface 1b. Have. Specifically, the sensor chip 1 has a main body 1k and a lid 1n arranged on the back surface 1m of the main body 1k, and the back surface of the lid 1n is the back surface 1b of the sensor chip 1. The main body 1k of the sensor chip 1 includes an opening 1d formed so as to penetrate from the front surface 1a toward the back 1m, a support (frame body) 1e disposed around the opening 1d, and the opening 1d. And a weight portion (movable portion) 1g supported by the support 1e via a plurality of beams (beams) 1f.

  The main body 1k of the sensor chip 1 is made of, for example, silicon, and the support 1e, the beam 1f, and the weight 1g are integrally formed. Each of the plurality of beams 1f that support the weight portion 1g has flexibility, and an external force (for example, inertial force or gravity) as a detection target is applied to the sensor chip 1, and the weight portion 1g When it moves, the plurality of beams 1f bend (elastically deform) along with this. Further, a piezoresistive element is arranged on each of the plurality of beams 1f, and each piezoresistive element is connected to a plurality of pads (not shown) formed on the surface 1a via wirings (not shown). Electrode pads and bonding pads) 1h are electrically connected to each other. A piezoresistive element is a resistive element whose resistance value changes with stress. That is, in the sensor chip 1, the resistance value of the piezoresistive element arranged on the beam 1 f changes when the plurality of beams 1 f bend. Therefore, the sensor chip 1 converts the resistance value into an electric signal and uses the electric signal from the pad 1 h. It is an acceleration sensor that takes out As described above, the sensor chip 1 includes a movable portion (weight portion 1g) that operates mechanically according to an external force to be detected, and an electric circuit portion (piezoelectric element in the beam 1f) that converts the operation of the movable portion into an electrical signal. A resistance element) and an electric circuit section (wiring or pad 1h (not shown) formed on the support 1e) for transmitting the converted electric signal.

  The sensor chip 1 has a lid portion 1n that is disposed on the lower surface 1m side of the main body portion 1k and covers the opening 1d from the back surface 1b side. The lid 1n has a function of preventing or suppressing the adhesive material (die bonding material) from affecting the main body after the sensor chip 1 is die-bonded. For this reason, the lid 1n is arranged so as to cover the main body 1k from the back surface 1b side, which is the bonding surface (mounting surface) side of the sensor chip 1, with the opening 1d. The lid 1n has a gap 1p in a region facing the opening 1d. In the sensor chip 1, a space for moving the weight portion 1g is secured by forming the gap 1p. However, as a modification of the sensor chip, there is a case where the opening 1d is not exposed on the bonding surface side (for example, a structure in which the main body 1k and the lid 1n are integrally formed). In this case, the lid 1n may not be provided.

  Here, since the sensor chip 1 detects the operation of the movable part as an electric signal as described above, the weight part 1g is in a predetermined position in the state where the external force as the sensing target is not applied from the viewpoint of the reliability as the sensor. It is important that the beam is arranged at (reference position) and the beam 1f is not bent. From this point of view, in a semiconductor device (semiconductor package) incorporating the sensor chip 1, it is preferable to reduce as much as possible the external force other than the sensing target applied to the main body 1k of the sensor chip 1. For this reason, in the present embodiment, as shown in FIGS. 2 and 3, in the main body 1k, the lid 1n is not arranged on the surface 1a side, which is the surface on which the beam 1f is arranged. Further, as will be described below, a space is formed in the sealed body of the semiconductor device, and the sensor chip 1 is disposed in the space.

<Outline configuration of semiconductor device>
Next, a configuration example of the semiconductor device of this embodiment will be described with reference to FIGS. 4 is a plan view showing the upper surface side of the semiconductor device of the present embodiment, FIG. 5 is a plan view showing the lower surface side of the semiconductor device shown in FIG. 4, and FIG. 6 is a cross section taken along the line CC in FIG. 7 and 7 are cross-sectional views along the line DD in FIG. 8 is a plan view showing a planar structure inside the sealing body of the semiconductor device shown in FIG. 4, and FIG. 9 is an enlarged plan view of a portion E in FIG. 8 and 9 are perspective plan views showing the internal structure of the semiconductor device, and therefore are plan views showing the internal structure through the sealing body 9 and the cap 5 shown in FIG. 6 to 8, the detailed structure of the sensor chip 1 (the structure shown in FIGS. 1 to 3) is not shown for ease of viewing.

  The semiconductor device of the present embodiment is a lead frame type semiconductor package in which a lead frame is used as a base material and a semiconductor chip is mounted on the chip mounting portion. In the present embodiment, as an example, FIG. A QFP (Quad Flat Package) 10 which is a lead frame type semiconductor device as shown will be described. Lead frame type semiconductor devices can utilize cost reduction technology accumulated over many years. In addition, since an infrastructure such as a manufacturing facility that has already been constructed can be used, the manufacturing cost can be reduced compared to a substrate type semiconductor device in which a semiconductor chip is mounted on a wiring substrate.

  First, an outline of the configuration of the QFP 10 shown in FIGS. 4 to 9 will be described. As shown in FIGS. 6 and 7, the QFP 10 has a top surface 2a, a bottom surface 2b opposite to the top surface 2a, and a cap 2 having a side surface 2c located between the top surface 2a and the bottom surface 2b (first member, back surface side cap material). 2 is provided. The cap 2 is a plate-like member made of a metal material. The QFP 10 includes the sensor chip 1 described with reference to FIGS. The sensor chip 1 is mounted on the upper surface 2 a of the cap 2 with the back surface 1 b facing the upper surface 2 a of the cap 2. 4 to 9, the QFP 10 has a control chip (controller chip) 6 that is a semiconductor chip that controls the sensor chip 1 built in the QFP 10, and the sensor chip 1 is mounted on the control chip 6. Has been. The QFP 10 includes a plurality of leads (terminals) 3 arranged around the sensor chip 1 (and the control chip 6). The QFP 10 includes a plurality of wires 4 that electrically connect the plurality of leads 3 and the plurality of pads 1 h of the sensor chip 1. As described above, the QFP 10 includes the control chip 6 in addition to the sensor chip 1. As shown in FIGS. 6 and 9, the pad 1h of the sensor chip 1 is connected to the control chip 6 via a plurality of wires 4a. The pads 6e of the control chip 6 are electrically connected to the plurality of leads 3 via the plurality of wires 4b. Each of the plurality of pads 6d and the plurality of pads 6e is electrically connected via a plurality of wirings (not shown) provided in the control chip 6. That is, in the QFP 10, the plurality of pads 1h of the sensor chip 1 are electrically connected to the plurality of leads 3 via the plurality of wires 4a and 4b and the control chip 6. Further, as shown in FIGS. 6 and 7, the QFP 10 has a top surface 5a, a bottom surface 5b opposite to the top surface 5a, and a side surface 5c located between the top surface 5a and the bottom surface 5b (second member, front surface side cap). Material) 5. The cap 5 has a shape that is recessed toward the upper surface 5a, and is disposed on the lower surface 5b side so as to surround the periphery of the cavity portion (space forming portion, recessed portion, recessed portion, chip housing portion) 5d and the cavity portion 5d. It has a flange portion (joining portion) 5e. The cap 5 is formed on the upper surface 2a of the cap 2 so that the sensor chip 1, the plurality of wires 4, and a part of the plurality of leads 3 (bonding regions to which the wires 4 are bonded) are located in the cavity portion 5d. The joint portion (the region between the adhesive surface 5f of the flange portion 5e and the upper surface 2a of the cap 2) of the cap 2 and the cap 5 is sealed with a sealing material 7. That is, by overlapping and joining the cap 2 and the cap 5, the space 8 in the cavity portion 5 d is formed as a hollow space sealed from the outside, and the sensor chip 1, the plurality of wires 4, and the plurality of wires are sealed in the space 8. A part of the lead 3 is arranged. Further, the QFP 10 is a joint portion of the caps 2 and 5 and another part of the plurality of leads 3 (an inner lead portion 3a inside the outer lead portion 3b which is an external terminal, and outside the caps 2 and 5). A sealing body (resin body) 9 is provided. That is, the QFP 10 is a semiconductor device in which the space 8 is formed in the sealing body 9 and the sensor chip 1 that is a semiconductor chip is disposed in the space 8.

  Here, as shown in FIGS. 6 and 7, in the QFP 10, the side surface 2c of the cap 2 and the side surface 5c of the cap 5 are covered with the sealing body 9, but the lower surface 2b of the cap 2 and the upper surface 5a of the cap 5 are Each of the surfaces is exposed from the sealing body 9. In other words, as shown in FIG. 4, the sealing body 9 is not disposed in the peripheral portion of the upper surface 5 a of the cap 5 and the region inside the peripheral portion in plan view. Further, as shown in FIG. 5, the sealing body 9 is not disposed in the peripheral portion of the lower surface 2 b of the cap 2 and a region inside the peripheral portion in plan view. Although details will be described later, in the present embodiment, by exposing the entire lower surface 2b of the cap 2 and the entire upper surface 5a of the cap 5, the pressure applied to the caps 2 and 5 in the process of forming the sealing body 9 is reduced. In particular, deformation of the cap 5 having the cavity portion 5d can be suppressed. For this reason, the sealing performance of the space 8 can be maintained, and the sealing body 9 can be prevented or suppressed from entering the space 8. As a result, the sealing body 9 comes into contact with the sensor chip 1, and it can be suppressed that the reliability of the sensor chip 1 and the QFP 10 is lowered due to the influence of the stress of the sealing body 9. Note that the entire surface of the upper surface 5a and the lower surface 2b is exposed from the sealing body 9 means that most of the upper surface 5a and the lower surface 2b are exposed from the sealing body 9, for example In the process of forming 9, a resin burr or the like is generated in a boundary region between the sealing body 9 and the upper surface 5a or the lower surface 2b, and the mode in which the resin burr slightly covers the upper surface 5a or the lower surface 2b is not excluded. Similarly, the sealing body 9 is not disposed in the peripheral portion of the upper surface 5a (lower surface 2b) and in the region inside the peripheral portion, for example, except for a slight resin such as a resin burr. This means that the stop body 9 is not arranged. In addition, the resin burr referred to here is a resin (resin) that constitutes a thermosetting resin (sealing resin) in a sealing process described later, and in a cross-sectional view or a side view, It refers to the one with almost no thickness.

<Detailed configuration of semiconductor device>
Next, the detailed structure of each member with which QFP10 is provided is demonstrated. First, the cap 2 is a flat plate having a quadrilateral shape in plan view as shown in FIG. 8, and there is a large depression (space forming portion) such as the cavity portion 5d of the cap 5 shown in FIGS. Not done. The length of one side of the cap 2 is, for example, about 15 mm to 20 mm. In the present embodiment, chamfering (R processing) is performed on each of the four corners of the cap 2 from the viewpoint of suppressing the occurrence of chipping of the sealing body 9 at the interface between the sealing body 9 and the cap 2. Has been given. However, the planar shape of the cap 2 is not limited to the aspect shown in FIG. 8, and may be a rectangular planar shape in which the corners are not chamfered. Further, the thickness (wall thickness) of the cap 2 is, for example, about 0.1 mm to 1 mm thicker than the cap 5 in order to expose the lower surface 2b of the cap 2 on the lower surface (mounting surface) side of the QFP 10. It is. From the viewpoint of improving the strength of the cap 2, it is preferable to increase the thickness of the cap 2, but in this case, the thickness of the entire QFP 10 is increased. Moreover, according to this Embodiment, since the deformation | transformation of the cap 2 can be suppressed by reducing the pressure added to the cap 2, the intensity | strength requested | required of the cap 2 itself can be reduced. Therefore, the thickness of the cap 2 can be reduced as long as the lower surface of the cap 2 is exposed from the sealing body 9. For example, it can be formed with the same thickness (wall thickness) as the cap 5.

  Further, in the QFP 10, the cap 2 functions as a chip mounting portion on which the control chip 6 is mounted. In other words, the control chip 6 is mounted on the upper surface 2a of the cap 2 as a chip mounting portion via the adhesive (die bond material) 11. The control chip 6 has a front surface 6a, a back surface 6b opposite to the front surface 6a, and a side surface 6c located between the front surface 6a and the back surface 6b, and is mounted with the back surface 6b facing the upper surface 2a of the cap 2. It is mounted by the so-called face-up mounting method. The adhesive 11 is not particularly limited as long as the control chip 6 can be fixed to the upper surface 2a of the cap 2. In the present embodiment, for example, a paste-like resin adhesive made of an epoxy-based thermosetting resin is used. After the control chip 6 is applied and the control chip 6 is adhered, it is fixed by thermosetting. Further, the sensor chip 1 is mounted on the surface 6 a of the control chip 6 via the adhesive 12. The sensor chip 1 is mounted on the control chip 6 by a face-up mounting method. The adhesive 12 is also a member for fixing the sensor chip 1 on the control chip 6, but a part of the adhesive 12 adheres to the side surface 1 c (see FIG. 2) of the sensor chip 1 and is generated in the adhesive 12. The adhesive 12 is preferably a film-like adhesive from the viewpoint of suppressing the adverse stress from adversely affecting the characteristics (detection characteristics) of the sensor chip 1. A film-like adhesive is preferable in that it is less likely to adhere to the side surface 1c of the sensor chip 1 than a paste-like adhesive. As the film-like adhesive, for example, DAF (Die Attach Film), which is generally used as an adhesive for laminating another semiconductor chip on a semiconductor chip, can be used.

  Further, when the sensor chip 1 is mounted on the cap 2 like the QFP 10, from the viewpoint of reducing the influence of the stress generated due to the difference in the linear expansion coefficient between the cap 2 and the sensor chip 1, the cap 2 is The sensor chip 1 is preferably made of a material having a linear expansion coefficient close to that of the sensor chip 1. Therefore, in the present embodiment, the sensor chip 1 is made of, for example, silicon, and the cap 2 is made of Kovar (an alloy in which nickel and cobalt are blended with iron), which is a metal material close to the linear expansion coefficient of silicon. Further, like the cap 2, the cap 5 is also made of Kovar. Specifically, a plating film made of, for example, nickel or nickel / palladium is formed on the surface of the base material made of Kovar (the upper surface 2a and the lower surface 2b of the cap 2 and the upper surface 5a, the lower surface 5b and the side surface 5c of the cap 5). Nickel / palladium indicates a constituent material of a plating film made of an alloy of nickel (Ni) and palladium (Pd). Hereinafter, the alloy of nickel and palladium is referred to as nickel / palladium or Ni / Pd, and the plating film made of nickel / palladium is referred to as a nickel / palladium film. The plating film (nickel film or nickel / palladium film) made of nickel or nickel / palladium functions as an antioxidant film for preventing the caps 2 and 5 from being oxidized. The plating film (nickel film or nickel / palladium film) formed on the side surface 5 c of the cap 5 functions as an adhesion improving film that improves the adhesion at the interface between the sealing body 9 and the cap 5. Further, from the viewpoint of reducing stress transmission to the sensor chip 1, it is preferable that the sensor chip 1 is not directly mounted on the cap 2 like the QFP 10, but is mounted via the control chip 6 made of, for example, silicon. Thereby, the stress transmitted to the sensor chip 1 can be further reduced. In addition, the shape in the cross sectional view of the cap 2 in the present embodiment is a flat plate shape that is not bent. That is, unlike the cap 5 described later, since the bending process is not performed, the strength of the cap 2 may be lower than that of the cap 5. Therefore, you may comprise with the same material (copper or copper alloy) as the lead | read | reed 3 fixed through the sealing material 7. FIG. In this case, as in the case of using Kovar, the surface of the base material (the upper surface 2a and the lower surface 2b of the cap 2 and the upper surface 5a, the lower surface 5b and the side surface 5c of the cap 5) is made of, for example, nickel or nickel / palladium. It is preferable to form a plating film.

  In this embodiment, since the lower surface 2b of the cap 2 is exposed, the cap 2 can function as a heat radiating member (heat spreader) that radiates heat generated in the space 8 to the outside of the QFP 10. From the viewpoint of the heat dissipation path, the heat dissipation efficiency can be improved as compared with the ceramic package by configuring the cap 2 with a metal material having a higher thermal conductivity than the ceramic material. When used as a heat radiating member, a bonding material (not shown) made of metal such as solder is disposed on the lower surface 2b side of the cap 2, and a terminal (not shown) of a mounting board (not shown) is interposed through the bonding material. Can be joined). In this case, heat transfer to the mounting substrate can be further improved, so that the heat dissipation efficiency is further improved.

  Further, the QFP 10 includes a sensor chip 1 and a control chip 6 that controls the sensor chip 1 in one package. In other words, the QFP 10 forms a system by mounting a plurality of semiconductor chips in a package and electrically connecting the plurality of semiconductor chips. As described above, by mounting the sensor chip 1 and the control chip 6 in one package, the mounting area can be reduced as compared with the case where the sensor chip 1 and the control chip 6 are separate packages. .

  Next, a plurality of leads (terminals) 3 are arranged around the sensor chip 1 and the control chip 6. The plurality of leads 3 are external terminals of the QFP 10, and the inner lead portion 3 a disposed inside the sealing body 9 (including the inside of the space 8) and the outer lead portion 3 b disposed outside the sealing body 9. Are integrally formed. The plurality of leads 3 are made of, for example, copper or a copper alloy, and a plating film (metal film) made of, for example, nickel or nickel / palladium on the surface (upper surface, lower surface, and side surface (surface located between the upper surface and the lower surface)). This plating film does not necessarily have to be formed on the entire surface of each of the plurality of leads 3, but if it is not formed on the entire surface, this plating film is formed after the sealing body 9 is formed. A plating film (exterior plating film) made of a lead solder material or a solder material substantially free of lead (lead-free solder) on the surface (upper surface, lower surface and side surfaces) of the outer lead portion 3b exposed from the sealing body 9 6 is disposed so as to protrude from the side surface of the sealing body 9, and is bent on the outer side of the sealing body 9. For example, in FIG. 6, the inner lead portion 3a shown in FIG.6 extends from the boundary with the outer lead portion 3b into the space 8, and the tip thereof is disposed in the space 8. Further, in order to dispose the inner lead portion 3a in the space 8, the tip portion (bonding region 3c shown in FIG. 13) of the inner lead portion 3a is disposed on the upper surface 2a of the cap 2. In addition, by disposing a part of the inner lead portion 3a in the space 8, the joint portion of the wire 4b connecting the control chip and the lead 3 can be disposed in the space 8 (in the cavity portion 5d). The periphery of the tip of the inner lead portion 3a is a bonding region where the wire 4b is bonded. By placing this bonding region inside the cavity portion 5d, the cap 5 In addition, as described above, the cap 2 is made of a metal material (conductive material) such as Kovar, copper, or a copper alloy, so that the plurality of leads 3 and the cap 2 arranged on the cap 2 can be covered. Is not insulated, a short circuit occurs between the plurality of leads 3. Therefore, in the QFP 10, an insulating adhesive 13 is disposed between the upper surface 2a of the cap 2 and the lower surface of the lead 3, and the adhesive 13 is interposed therebetween. The lead 3 is bonded and fixed to the cap 2.

  Further, as shown in FIG. 8, a plurality of leads 3 are arranged along the four sides of the QFP 10 in plan view. Considering the semiconductor chip as a reference, each of the sensor chip 1 and the control chip 6 has a quadrilateral planar shape, and a plurality of leads 3 are arranged at positions facing each of the four sides in plan view. In the example shown in FIGS. 8 and 9, a plurality of pads 6e (see FIG. 9) are arranged along two opposite sides of the four sides of the control chip 6, and are arranged at positions facing the plurality of pads 6e. Wires 4 b are connected to the plurality of leads 3. On the other hand, the wire 4 is not connected to the plurality of leads 3 facing the side where the pad 6e is not disposed. In this way, when the number of leads 3 is larger than the number of terminals (pads) of the semiconductor chip, a configuration in which the wires 4 are not connected to some of the leads 3 can be adopted. In the QFP 10 shown in FIGS. 8 and 9, the plurality of pads 1 h (see FIG. 9) of the sensor chip 1 and the plurality of leads 3 are not directly connected via the wires 4. That is, the pads 1h to which the wires 4 are connected among the plurality of pads 1h of the sensor chip 1 are all connected to the pads 6d (see FIG. 9) of the control chip 6 through the wires 4a. Of the plurality of leads 3, all the leads 3 to which the wires 4 are connected are connected to the pads 6 e of the control chip 6 through the wires 4 b. Thus, by connecting the pad 1h of the sensor chip 1 to the lead 3 via the control chip 6, the wire length of the wire 4a connected to the pad 1h can be shortened. For example, as shown in FIGS. 6 and 8, the wire length of the wire 4a is shorter than the length of the wire 4b. As shown in FIG. 6, when a plurality of wires 4 are arranged in the space 8, the wires 4 may vibrate due to an external force such as vibration applied to the QFP 10, and in particular, the wires connected to the sensor chip 1. If 4a vibrates greatly, the characteristic (detection characteristic) of the sensor chip 1 may be deteriorated. If the external force applied to the QFP 10 is constant, the degree of vibration is reduced by shortening the length of the wire 4. Therefore, from the viewpoint of suppressing the deterioration of the characteristics (detection characteristics) of the sensor chip 1, the pads 1h to which the wires 4 are connected among the plurality of pads 1h of the sensor chip 1 are all pads 6d of the control chip 6 via the wires 4a. It is preferable to connect with. However, the wiring layout is not limited to the mode shown in FIGS. 8 and 9, and various modifications can be applied according to the number of terminals (pads) of the semiconductor chip connected to the leads 3 and the layout.

  Next, a cap (second member, surface-side cap material) 5 is disposed on the control chip 6 and the sensor chip 1. As shown in FIGS. 6 and 7, the cap 5 has an upper surface 5a, a lower surface 5b opposite to the upper surface 5a, and a side surface 5c located between the upper surface 5a and the lower surface 5b. The cap 5 is made of Kovar, and a plating film made of nickel is formed on the surface (the upper surface 5a, the lower surface 5b, and the side surface 5c). Further, on the lower surface 5 b side of the cap 5, a cavity portion 5 d disposed at a substantially central portion of the cap 5 and a flange portion (joining portion) 5 e surrounding the periphery of the cavity portion 5 d are disposed. In the QFP 10, the flange portion 5e of the cap 5 and the peripheral edge portion of the upper surface 2a of the cap 2 are joined via the sealing material 7 (and the adhesive material 13), whereby the sensor chip 1, the control chip 6, the plurality of wires 4 and A part (bonding region) of each of the plurality of leads 3 is sealed in the space 8. The depth of the cavity portion 5d is deeper than the thickness of the semiconductor chip (the sensor chip 1 and the control chip 6), but it affects the thickness of the QFP 10 and should be made as shallow as possible to cope with the thinning of the package. Is preferred. For example, in this embodiment, it is about 1 mm to 3 mm. Further, the planar size of the cavity portion 5d is larger than the planar sizes of the sensor chip 1 and the control chip 6. For example, the length of one side of the cavity portion 5d forming a quadrilateral in plan view is, for example, about 13 mm to 18 mm. .

  Here, since the sealing material 7 is a member disposed at the joint between the cap 2 and the cap 5, from the viewpoint of improving the sealing performance in the space 8, high sealing characteristics (characteristics embedded between adjacent leads 3). , The property of maintaining the shape from application to adhesion fixation, and adhesion at the adhesive interface) are required. In the present embodiment, the sealing material 7 that requires high sealing properties is preferably the following material. That is, from the viewpoint of reducing the gap generated between the adjacent leads 3, rather than a material that adheres in a solid state, such as a film-like (tape-like) adhesive (for example, an adhesive such as the adhesive 12), Prior to curing, a material having pasty properties is preferred. Moreover, since it is necessary to maintain a coating shape after apply | coating the sealing material 7 until it hardens | cures, the one where a viscosity is high to some extent is preferable. For example, a sealing material having a viscosity such as water cannot maintain the applied shape. On the other hand, if the viscosity is too high, a gap may be formed between adjacent leads 3. Therefore, it is preferable to lower the viscosity within a range in which the applied shape can be maintained until the joint portion between the caps 2 and 5 is fixed after being applied on the cap 2 and the lead 3 and cured. For example, in the present embodiment, the adhesive 11 and the sealing material 7 use an adhesive in which filler (particles) is mixed with an epoxy thermosetting resin. Is lower than the viscosity of the adhesive 11 before curing. Such viscosity adjustment can be performed by adjusting the blending ratio of additive materials such as a binder material for viscosity adjustment in addition to the shape and particle size of the filler added to the adhesive. Further, after the sealing material 7 is cured, it is required that the adhesive interfaces with the caps 2 and 5 and the leads 3 are in close contact and fixed. In the present embodiment, a plating film made of the same metal material (for example, nickel or nickel / palladium) is formed on each of the upper surface 2a of the cap 2, the adhesive surface 5f of the flange portion 5e of the cap 5, and the surface of the lead 3. Therefore, the adhesiveness with each member arrange | positioned at a junction part can be improved easily. Note that the adhesive 13 that bonds and fixes the plurality of leads 3 and the upper surface 2a of the cap 2 is also a member disposed at the joint. Therefore, the same material as the sealing material 7 can be used for the adhesive 13. However, if the sealing material 7 is a paste-like thermosetting resin, for example, even if a film-like adhesive is used as the adhesive 13, the sealing material 7 is embedded in the gap between the adjacent leads 3. . For this reason, in the present embodiment, the adhesive 13 is a film-like adhesive that is easy to handle (for example, on the surface of the film base as in the case of the adhesive 12).

  Next, the joint part of the caps 2 and 5 is covered with the sealing body 9. The sealing body 9 is a resin that is generally used in a so-called plastic package semiconductor device called a plastic package. For example, in the present embodiment, the sealing body 9 is formed by a transfer mold method (details will be described later). Yes. As shown in FIG. 6, the QFP 10 includes a semiconductor chip (the sensor chip 1 and the control chip 6) and a plurality of wires 4 connected to the semiconductor chip in a space 8 formed by overlapping caps 2 and 5. Therefore, a mode in which the sealing body 9 is not formed is also considered as a modified example. However, when the sealing body 9 is not formed, the joint portions of the caps 2 and 5 are exposed, so that the joint portions are easily broken by an external force such as impact or thermal influence. Moreover, if the strength of the sealing material 7 and the adhesive material 13 is increased in order to suppress the breakage of the joint portion, the sealing performance of the space 8 may be impaired. In addition, the manufacturing process becomes complicated. Therefore, as shown in FIG. 6, it is preferable to cover the outer side of the joint part of the caps 2 and 5 with the sealing body 9 to protect the joint part. Thereby, the sealing material 7 and the adhesive material 13 can select an optimal material in consideration of the above-described sealing characteristics. Moreover, since the strength of the joint portion is reinforced by the sealing body 9, it is possible to suppress the breakage of the joint portion as compared with the case where the sealing body 9 is not formed.

  Further, as shown in FIG. 8, the sealing body 9 in a plan view has a quadrilateral shape having four sides (main sides other than the chamfered portion of the corner), and the corners that are the intersections of the sides are arranged at the corners. The suspension leads 14 are respectively disposed. In the manufacturing process of the QFP 10 to be described later, the suspension lead 14 is a lead whose base material is a region in the sealing body 9 during each process from the formation of the sealing body 9 until the QFP 10 is singulated. It is a support member for supporting by a frame. Therefore, the plurality of suspension leads 14 are made of the same material (for example, copper or copper alloy) as the plurality of leads 3. On the other hand, in the present embodiment, the caps 2 and 5 are made of Kovar, for example, as described above, and are formed separately from the suspension lead 14, but as described above, The same material (for example, copper or copper alloy) may be used.

<Manufacturing process of semiconductor device>
Next, a manufacturing process of the QFP 10 shown in FIGS. The QFP 10 is manufactured according to the assembly flow shown in FIG. FIG. 10 is an explanatory diagram showing an assembly flow of the semiconductor device of the present embodiment. Details of each step will be described below with reference to FIGS.

1. Lead frame preparation process;
FIG. 11 is a plan view showing the overall structure of the lead frame prepared in the lead frame preparation step shown in FIG. 10, and FIG. 12 is an enlarged plan view around one product formation region among the plurality of product formation regions shown in FIG. FIG. FIG. 13 is an enlarged sectional view taken along line FF in FIG.

  First, as a lead frame preparation step shown in FIG. 10, a lead frame 20 as shown in FIG. 11 is prepared. The lead frame 20 used in the present embodiment includes a plurality of product formation regions 20a inside a frame portion (frame body) 20b. The plurality of product formation regions 20a are arranged in a matrix. A frame portion 20b is also disposed between adjacent product formation regions 20a. Between the adjacent product forming regions 20a, runner portions that are supply paths for supplying the sealing resin toward the cavities disposed in the respective product forming regions 20a are disposed in a sealing process described later. A runner region 20c which is a region to be aligned is arranged along the column direction.

  In each product formation region 20a, as shown in FIG. 12, which is a partially enlarged view of FIG. 11, the cap 2 is disposed at the center of the product formation region 20a. In general, in the manufacturing process of a lead frame type semiconductor device, a die pad (tab), which is a chip mounting portion for mounting a semiconductor chip, is arranged at the center of a product formation region, and the lead frame Although connected to the frame portion, in this embodiment, since the cap 2 also serves as the chip mounting portion, the die pad formed integrally with the lead frame is not formed. In the present embodiment, the cap 2 is formed of a material different from that of the lead frame 20. For example, the lead frame 20 is made of metal, and in this embodiment, is made of, for example, copper (Cu) or a copper alloy. Specifically, as shown in FIG. 13, a plating film (metal film) 22 made of, for example, nickel (Ni) or nickel / palladium (Ni / Pd) is formed on the surface of a base material 21 made of copper (Cu). Yes. On the other hand, the cap 2 has a plating film (metal film) 22 made of, for example, nickel (Ni) or nickel / palladium (Ni / Pd) formed on the surface of a base material 23 made of, for example, Kovar. For this reason, the cap 2 is formed as a separate body from the lead frame 20 and is bonded and fixed to the plurality of leads 3 via the adhesive 13. At this time, the adhesion interface between the lead 3 and the cap 2 with the adhesive 13 is the plating film 22 made of nickel or nickel / palladium, respectively, so that the adhesion to the adhesive 13 can be improved. it can. In this step, as shown in FIG. 12, a lead frame 20 in which a plurality of leads 3 and a cap 2 are bonded and fixed is prepared. Accordingly, in the following description, the lead frame 20 includes the cap 2 that is bonded and fixed to the plurality of leads 3, except when specifically explaining the cap 2.

  Further, as shown in FIG. 12, a plurality of leads 3 are arranged around the cap 2. As shown in FIG. 6, the lead 3 includes an inner lead portion 3 a that is sealed by the sealing body 9 when completed, and an outer lead portion 3 b that is exposed from the sealing body 9. As shown in FIG. 13, the inner lead portion 3 a has a bonding region 3 c, a sealing region 3 d, and a sealing region 3 e that are arranged in order from the inner end of the lead 3. Further, the outer lead portion 3b has a dam region 3f and an outermost region 3g arranged in order from the boundary with the inner lead portion 3a. The bonding region 3c is a region that is arranged at the inner end of the lead 3 and joins the wire 4 (see FIG. 6) in the wire bonding step (see FIG. 10). Further, the sealing region 3d is disposed between the bonding region 3c and the outer lead portion 3b, and between the flange portion 5e (see FIG. 6) of the cap 5 (see FIG. 6) in the cap bonding process (see FIG. 10). It is an area | region sealed with the sealing material 7 (refer FIG. 6). The sealing region 3e is a region that is disposed between the sealing region 3d and the outer lead portion 3b and is sealed by the sealing body 9 (see FIG. 6) in the sealing step (see FIG. 10). The dam region 3f is disposed between the sealing region 3e and the outermost region 3g, and serves as a dam when the sealing resin is supplied into the molding die in the sealing step (see FIG. 10). This is an area to which the unit 24 (see FIG. 12) is connected. Further, the outermost region 3g is a region that is arranged at the outer end of the lead 3 and is bent into a gull wing shape as shown in FIG. 6, for example, in the lead forming step (see FIG. 10).

  Further, between the dam regions 3f (see FIG. 13) of the plurality of leads 3 shown in FIG. 12, dam portions (dam bars, tie bars) 24 extending so as to intersect (perpendicular to) the plurality of leads 3 are arranged. The lead 3 is formed integrally with the lead frame 20 via the dam portion 24. The dam part 24 is arranged so as to surround the periphery of the cap 2. In a sealing step (see FIG. 10) described later, a sealing resin is supplied to the inside of the region surrounded by the dam portion 24 to form the sealing body 9 shown in FIG. In addition, the suspension leads 14 are respectively disposed at the corners of the quadrilateral formed by the dam portion 24. In other words, a plurality of leads 3 are arranged between the adjacent suspension leads 14. The suspension leads 14 are formed in the product formation region 20a after the outermost region 3g (see FIG. 13) of the plurality of leads 3 is cut in the lead molding step shown in FIG. Each member is a member supported by the lead frame 20. For this reason, it is formed integrally with the lead frame 20.

  The lead frame 20 shown in FIGS. 11 to 13 can be formed as follows, for example. First, a thin plate made of copper (Cu) is prepared and etched to form, for example, a plurality of leads 3, a plurality of suspension leads 14, and a dam portion 24 in a pattern shown in FIG. Further, a plurality of caps 2 are prepared in correspondence with the number of product formation regions 20a shown in FIG. 11, and the adhesive 13 is disposed on the peripheral edge of the upper surface 2a. Then, the cap 2 is positioned so that the region where the adhesive 13 is disposed on the upper surface 2a of the cap 2 and the tip regions (bonding region 3c and sealing region 3d shown in FIG. 13) of the leads 3 overlap. The lead 3 is bonded. Next, for example, the adhesive material 13 is cured by heating the lead frame 20 to which the cap 2 is bonded, and the cap 2 and the plurality of leads 3 are fixed. At this time, in order to improve the sealing performance of the space 8 shown in FIG. 6, it is important to arrange the adhesive 13 so that there is no gap between the lower surface of the lead 3 and the upper surface 2 a of the cap 2. On the other hand, in the case of a paste-like adhesive, if the amount of the adhesive 13 is too large, a part of the adhesive 13 goes around to the upper surface side of the bonding region 3c (see FIG. 13), and the wire bonding step (FIG. 10). (Refer to FIG. 5), it causes a bonding failure. For this reason, it is preferable to use a film-like adhesive (specifically, an adhesive in which, for example, a thermosetting resin layer serving as an adhesive layer is disposed on the upper and lower surfaces of a resin film serving as a base material).

  In the above description, a description has been given of a mode in which a plurality of caps 2 corresponding to the number of product formation regions 20a shown in FIG. 11 are prepared and aligned with a plurality of leads 3, respectively. Can be applied. For example, the plurality of caps 2 are integrated by connecting via a suspension lead (cap connection suspension lead) (not shown), and the suspension lead is cut after the cap 2 is bonded and fixed to the lead 3. be able to. In this case, the cap 2 and the lead 3 respectively disposed in the plurality of product formation regions 20a can be aligned at once. In this case, since a space for cutting a suspension lead (not shown) that connects the plurality of caps 2 is required, it is preferable that the suspension lead 14 formed integrally with the lead frame 20 is disposed away from the cap 2. . Thereby, in the space between the suspension lead 14 and the cap 2, a suspension lead (not shown) that connects the plurality of caps 2 can be cut. Further, when a plurality of caps 2 that are not connected are bonded and fixed to the leads 3, a plurality of suspension leads 14 can be bonded and fixed to the upper surface 2 a side of the cap 2 in the same manner as the lead 3.

2. Semiconductor chip preparation process;
Next, as a semiconductor chip preparation step shown in FIG. 10, a plurality of semiconductor chips (sensor chip 1 and control chip 6) shown in FIG. 6 are prepared. In this step, a semiconductor wafer (not shown) having a plurality of chip regions and made of, for example, silicon is prepared. Thereafter, a dicing blade is run along the dicing line of the semiconductor wafer (not shown) to divide the semiconductor wafer and obtain a plurality of types of semiconductor chips. Specifically, a semiconductor wafer in which a sensor (movable part) provided in the sensor chip 1 shown in FIGS. 1 to 3 and a sensor circuit electrically connected to the movable part are formed in each of a plurality of chip regions by the MEMS technology is prepared. . Further, a semiconductor wafer is prepared in which a control circuit provided with the control chip 6 shown in FIGS. Then, each semiconductor wafer is divided into individual pieces, and a plurality of sensor chips 1 and a plurality of control chips 6 are obtained. In the present embodiment, the sensor chip 1 shown in FIG. 6 is mounted on the surface 6a of the control chip 6 via, for example, a film-like adhesive called DAF, so that a plurality of sensor chips acquired in this step is used. The adhesive material 12 is affixed on each back surface 1b.

3. Semiconductor chip mounting process;
14 is an enlarged plan view showing a state in which a semiconductor chip (control chip) is mounted on the cap shown in FIG. 12 via an adhesive, and FIG. 15 is an enlarged cross-sectional view taken along line GG in FIG. . 16 is an enlarged plan view showing a state in which a semiconductor chip (sensor chip) is mounted on the control chip shown in FIG. 14 via an adhesive, and FIG. 17 is an enlarged cross section taken along line GG in FIG. FIG. 14 and 16, the periphery of the cap 2 shown in FIG. 12 is further enlarged for easy viewing.

  Next, as a semiconductor chip mounting step shown in FIG. 10, the control chip 6 and the sensor chip 1 are sequentially mounted on the upper surface 2 a of the cap 2 as shown in FIGS. 14 to 17. In this step, as shown in FIGS. 14 and 15, the control chip 6, which is a semiconductor chip disposed in the lower layer, is first mounted on the upper surface 2 a of the cap 2 via the adhesive 11. In the present embodiment, as shown in FIG. 14, the control chip 6 has a plurality of pads 6d and 6e formed along two opposite sides of the four sides of the surface 6a. In this step, each side of the cap 2 is placed in the center of the cap 2 so that the two sides of the control chip 6 on which the pads 6e are disposed are respectively opposed to the lead group (the plurality of leads 3) bonded and fixed on the cap 2. Place along the side. Further, as shown in FIG. 15, the control chip 6 is mounted by a so-called face-up mounting method in which the back surface 6 b of the control chip 6 is mounted facing the upper surface 2 a of the cap 2.

  In the present embodiment, for example, the control chip 6 is mounted via an adhesive 11 that is an epoxy-based thermosetting resin. The adhesive 11 has fluidity before being cured (thermoset). It is a paste material. When the paste material is used as the adhesive material 11 in this way, first, the paste-like adhesive material 11 is applied on the chip mounting region of the upper surface 2 a of the cap 2. Next, for example, the pressing jig 30 shown in FIG. 15 is pressed against the front surface 6 a side of the control chip 6, and the back surface 6 b of the control chip 6 is pressed toward the upper surface 2 a of the cap 2. 6 is spread and adhered to the entire back surface 6b. Then, after bonding, when the adhesive 11 is cured (for example, heat treatment is performed), the control chip 6 is fixed on the chip mounting region 2d via the adhesive 11 as shown in FIGS. As a modification, the adhesive 11 can be a film-like adhesive. Furthermore, if the improvement of the heat dissipation to the cap 2 is taken into consideration, an adhesive containing conductive particles having a high thermal conductivity may be used. However, a paste-like adhesive is preferred in that the adhesive strength with the upper surface 2a of the cap 2 made of metal (for example, nickel or nickel / palladium) can be improved. When the paste-like adhesive 11 is used in this way, the adhesive 11 is wetted and spread over the entire back surface 6b of the control chip 6, so that the outer edge of the adhesive 11 is as shown in FIGS. It extends outside the outer edge of the control chip 6. Here, from the viewpoint of suppressing a decrease in reliability of the QFP 10 (see FIG. 6), a part of the adhesive 11 is wetted up to the surface 6a side of the control chip 6 and covers the pads 6d and 6d, or the sensor chip 1 ( It is necessary to suppress reaching to (see FIG. 6). Therefore, it is preferable to reduce the arrangement amount (application amount) of the adhesive material 11 within a range in which the entire back surface 6b of the control chip 6 spreads out. Moreover, the wetting up to the surface 6a side can be suppressed by making the viscosity of the adhesive material 11 high enough. For this reason, the viscosity before hardening of the adhesive material 11 is higher than the viscosity before hardening of the sealing material 7 shown in FIG.

  Next, as shown in FIGS. 16 and 17, the sensor chip 1 is mounted on the surface 6 a of the control chip 6 via the adhesive 12. In this step, the sensor chip 1 is disposed on the front surface 6 a of the control chip 6 with the back surface 1 b side (the surface on which the adhesive 12 is adhered) facing the front surface 6 a of the control chip 6. The sensor chip 1 is mounted, for example, by pressing a pressing jig 31 shown in FIG. 17 against the front surface 6a side of the control chip 6 and pressing and bonding the back surface 1b of the sensor chip 1 onto the front surface 6a of the control chip 6. . Here, since the film-like adhesive 12 is affixed in advance to the back surface 1b of the sensor chip 1, the sensor chip 1 can be mounted with a weaker pressing force than when the control chip 6 is mounted. For this reason, the damage of the sensor chip 1 by this process can be suppressed. If the film-like adhesive 12 is used, the adhesive 12 does not protrude outward from the outer edge of the back surface 1b of the sensor chip 1 as shown in FIG. It is possible to prevent a part of the adhesive material from adhering to the bonding pad 6b of the control chip 6 (contamination). Next, the adhesive layer of the adhesive 12 is cured to fix the sensor chip 1 on the surface 6 a of the control chip 6.

4). Wire bonding process;
18 is a plan view showing a state in which the semiconductor chip shown in FIG. 16 and a plurality of leads are electrically connected via wires, and FIG. 19 is an enlarged cross-sectional view taken along the line GG in FIG. .

  Next, as a wire bonding step shown in FIG. 10, as shown in FIGS. 18 and 19, a plurality of pads of the semiconductor chip and a plurality of leads 3 are electrically connected through a plurality of wires 4, respectively. . In this step, the plurality of pads 1h of the sensor chip 1 and the plurality of pads 6d of the control chip 6 are electrically connected via the plurality of wires 4a, respectively. Further, the plurality of pads 6e of the control chip 6 and the plurality of leads 3 are electrically connected through the plurality of wires 4b, respectively.

  Specifically, for example, as shown in FIG. 19, a heat stage 32 which is a heating source at the time of wire bonding is prepared, the lead frame 20 is disposed on the heat stage 32, and the control chip 6 and the sensor chip 1 are interposed via the cap 2. Heat. On the other hand, one end portion of the wire 34 protruding from the tip end portion of the capillary 33 is discharged to form a ball portion, and this ball portion is joined to the pad 1h or the pad 6e on the first bond side. The wire 34 is bonded by a so-called nail head bonding method in which ultrasonic waves and thermocompression bonding are used together. After joining the first bond side, the capillary 33 is moved while gradually feeding the wire 34 from the capillary 33 to form the loop shape of the wire 4. Then, after bonding the wire 34 to the pad 6d on the second bond side or the bonding region 3c (see FIG. 13) of the lead 3, the wire 34 is cut to form the wire 4 having a loop shape as shown in FIG. Is done. The connection order of the wires 4a and 4b is not particularly limited. Further, in the present embodiment, the wire 4 is formed by a so-called positive bonding method in which the pads 1h and 6e positioned relatively above are the first bond side, but as a modification, the pads 1h and 6e are A so-called reverse bonding method for the second bond side can also be applied. When the wire 4 (4a) is formed by the positive bonding method, for example, a bump (not shown) made of a part of the wire is formed in advance on the pad 6d on the second bond side. A part of the wire 4 (4a) is connected. On the other hand, when the reverse bonding method is applied, bumps (not shown) made of, for example, a part of a wire are formed on the pads 1e and 6d, respectively, and a part of the wire 4 (4a, 4b) is formed on the bump. Connecting.

5. Cap bonding process;
20 is an enlarged plan view showing a state in which another cap is overlapped and fixed on the cap shown in FIG. 18, FIG. 21 is an enlarged cross-sectional view taken along line GG in FIG. 20, and FIG. It is an expanded sectional view along the 20 HH line. 23 is an enlarged plan view showing a state in which a sealing material is applied on the cap and the plurality of leads shown in FIG. 18, and FIG. 24 is a cross-sectional view taken along line HH in FIG. FIG.

  Next, as a cap bonding step shown in FIG. 10, as shown in FIG. 21, a cap (second member, front-side cap material) 5 is prepared and placed on the upper surface 2 a of the cap 2, and the cavity of the cap 5 is prepared. The bonding surface (lower surface) 5f of the flange portion 5e provided outside the portion 5d and the upper surface 2a of the cap 2 are bonded and fixed (mounted) via the sealing material 7. The cap 5 is mounted as follows, for example.

  First, as shown in FIGS. 23 and 24, a paste-like sealing material 7 is applied to the peripheral portion of the upper surface 2 a of the cap 2. Next, the cap 5 is arranged on the cap 2 so that the region where the sealing material 7 is applied and the adhesive surface 5f of the flange portion 5e of the cap 5 shown in FIGS. Then, for example, when the cap 5 is pressed from the upper surface 5a side toward the cap 2 by a pressing jig (not shown) and the adhesive surface 5f of the flange portion 5e is pressed into the upper surface 2a side of the cap 2, FIG. 22 and FIG. As described above, the sealing material 7 spreads so as to be embedded in the gap between the adjacent leads 3, and the adhesive surface 5 f of the flange portion 5 e and the upper surface 2 a of the cap 2 are bonded via the sealing material 7. Next, when the paste-like sealing material 7 is heated and cured, the adhesive surface 5 f of the flange portion 5 e and the upper surface 2 a of the cap 2 are fixed, and the cap 5 is mounted on the cap 2. In the present embodiment, since the sealing material 7 contains, for example, an epoxy-based thermosetting resin, it can be cured by heating the sealing material 7.

  As shown in FIG. 21, the cap 5 includes a cap 5 having an upper surface 5a, a lower surface 5b opposite to the upper surface 5a, and a side surface 5c located between the upper surface 5a and the lower surface 5b. The cap 5 has a shape that is recessed toward the upper surface 5a, and is disposed on the lower surface 5b side so as to surround the periphery of the cavity portion (space forming portion, recessed portion, recessed portion, chip housing portion) 5d and the cavity portion 5d. It has a flange portion (joining portion) 5e. The cap 5 is obtained, for example, by forming a cavity portion 5d and a flange portion 5e by pressing a flat plate made of Kovar. The method of forming the cap 5 is not limited to this, and the cavity portion 5d and the flange portion 5e (projecting from the bottom surface of the flat plate) are removed by removing (penetrating) a portion (center portion) of one thick flat plate. Part) may be formed.

  The cavity 5d has a planar size that can accommodate (accommodate) the sensor chip 1, the control chip 6, the plurality of wires 4, and a part of the plurality of leads 3 (bonding regions 3c shown in FIG. 13). It is the size that can be. Therefore, in this step, the sensor chip 1, the control chip 6, the plurality of wires 4, and a part of the plurality of leads 3 (bonding region 3 c) are covered with the cap 5. In other words, in this step, the cap 5 is bonded onto the upper surface 2a of the cap 2 so as to cover the sensor chip 1, the control chip 6, the plurality of wires 4, and a part of the plurality of leads 3 (bonding region 3c). Fixed. Further, since the inner leads 3a and the outer leads 3b are integrally formed in the plurality of leads 3, each of the plurality of leads 3 extends from the inside of the cavity portion 5d of the cap 5 toward the outside of the cavity portion 5d. Are arranged as follows. After the caps 2 and 5 are bonded and fixed, the sensor chip 1, the control chip 6, the plurality of wires 4, and a part of the plurality of leads 3 (bonding region 3 c) surround these members. It arrange | positions in the space 8 sealed by the arrange | positioned junction part (sealing area | region).

  Further, as described above, the paste-like sealing material 7 has a viscosity enough to maintain the applied shape (for example, the shape shown in FIG. 24). For this reason, after apply | coating the sealing material 7, it can suppress that the sealing material 7 spreads around the application | coating area | region before bonding the cap 5. FIG. Moreover, the viscosity of the paste-form sealing material 7 is lower than the viscosity of the paste-form adhesive material 11 shown in FIG. For this reason, as shown in FIG. 23, the sealing material 7 can be embedded so that no gap is generated between the adjacent leads 3. In other words, since the plurality of leads 3 are arranged in the region where the sealing material 7 is applied, the surface is rougher than the upper surface 2 a of the cap 2. For this reason, when the sealing material 7 is applied, there may be a gap between the sealing material 7 and the upper surface of the cap 2 as shown in FIG. However, the sealing material 7 can be embedded in this gap by pressing the cap 5 and spreading the pasty sealing material 7. In particular, if the sealing material 7 having a viscosity lower than that of the paste-like adhesive material 11 shown in FIG. 15 is used, the embedding characteristic is improved, so that the generation of a gap in which the sealing material 7 is not embedded is effectively suppressed. can do.

  By the way, FIG. 23 and FIG. 24 demonstrated the example of the method of apply | coating a sealing material. However, as shown in FIGS. 21 and 22, when a part of the cap 5 (here, the flange portion 5e) and the upper surface 2a of the cap 2 are bonded, the sealing material 7 becomes the sensor chip 1, the control chip 6, The coating method is not particularly limited as long as it surrounds the bonding regions of the plurality of wires 4 and the plurality of leads 3 and can suppress the generation of gaps between the leads 3 in the sealing region (joining portion). For example, in FIG. 23 and FIG. 24, a mode in which the paste-like sealing material 7 is arranged in a strip shape along the peripheral edge portion of the upper surface 2 a of the cap 2 is shown. However, as a modification, so-called multi-point application in which paste-like sealing materials 7 are arranged at a plurality of locations along the peripheral edge of the upper surface 2a of the cap 2 (region where the sealing material 7 shown in FIG. 23 is arranged). It can also be a method. Even in the case of the multi-point application method, the sealing material 7 can be embedded in the gaps between the leads 3 by pressing the cap 5 to spread the pasty sealing material 7. For example, in FIG. 23 and FIG. 24, the method of applying the paste-like sealing material 7 on the cap 2 has been described. However, the member to which the sealing material 7 is applied is not limited to the cap 2, and can be applied to the adhesive surface 5 f of the flange portion 5 e of the cap 5, for example. For example, the sealing material 7 can be applied to both the peripheral edge portion of the upper surface 2 a of the cap 2 and the bonding surface 5 f of the flange portion 5 e of the cap 5.

6). Sealing step;
25 is an enlarged plan view showing a state in which a sealing body is formed in the product formation region of the lead frame shown in FIG. 20, and FIG. 26 is an enlarged cross-sectional view taken along line FF in FIG. FIG. 27 is an enlarged cross-sectional view showing a state in which the sealing resin is supplied into the cavity of the molding die in the cross section taken along the line FF shown in FIG. FIG. 28 is an enlarged cross-sectional view showing a state in which the sealing resin is supplied into the cavity of the molding die in the cross section taken along the line II shown in FIG. FIG. 57 is an enlarged sectional view showing a comparative example with respect to FIG.

  Next, as a sealing step shown in FIG. 10, as shown in FIGS. 25 and 26, a sealing body 9 is formed so as to surround the caps 2 and 5, and the joint portion of the caps 2 and 5 is sealed. To do. As described above, the space 8 shown in FIG. 22 is already sealed and sealed at the joint between the caps 2 and 5, but the sealed body has higher strength than the cured sealing material 7. 9 is formed, and the joint is reinforced by sealing the joint, so that the sealed state can be maintained.

  In the present embodiment, the sealing method is a semiconductor mounted on the lead frame 20 in the cavities 43 and 44 of the upper die 41 and the lower die 42 of the molding die 40 as shown in FIGS. A so-called transfer mold method is used in which a thermosetting resin (sealing resin 9a) that has been softened (plasticized) is pressed into the cavities 43 and 44, and then cured by heating, with the chip fixed. ing. The thermosetting resin (sealing resin 9a) used in the present embodiment includes a resin (resin) and filler (particles) mixed in the resin. Further, the transfer mold method is preferable in that the sealing body 9 can be collectively formed in the plurality of product formation regions 20a, and thus the manufacturing can be performed efficiently. In addition, the transfer mold method applies a strong supply pressure to a relatively hard sealing resin even in a softened state and press-fits into the cavity, so that the strength of the sealing body 9 which is a resin body obtained after curing is other than that. Higher than the scheme. For this reason, it is particularly suitable as a method for reinforcing the joint.

  In this step, first, a molding die 40 shown in FIGS. 27 and 28 is prepared. The molding die 40 includes an upper die (first die) 41 that covers the upper surface (surface on which the semiconductor chip is mounted) side of the lead frame 20, and a lower surface (opposite surface of the surface on which the semiconductor chip is mounted). A lower mold (first mold) 42 covering the side is provided. The upper mold 41 has a cavity (concave part) 43 and the lower mold 42 has a cavity (concave part) 44, and the cavities 43 and 44 are overlapped to form the sealing body 9 shown in FIG. To create a space for A mold surface (clamp surface) 41 a is disposed around the cavity 43 of the upper mold 41. A mold surface (clamp surface) 42a is disposed around the cavity 44 of the lower mold 42, and is disposed opposite to the mold surface 41a. The molding die 40 fixes the lead frame 20 between the upper die 41 and the lower die 42 by sandwiching and holding the lead frame 20 between the opposing die surfaces 41a and 42a. The mold surfaces 41a and 42a extend to the inside of the dam portion 24 shown in FIG. 25 (the side close to the cap 5). In other words, the cavities 43 and 44 are arranged inside the dam portion 24 shown in FIG. Accordingly, the sealing resin 9a shown in FIGS. 27 and 28 does not spread outside the dam portion 24 (see FIG. 25), and the sealing body 9 having the shape shown in FIGS. 25 and 26 is formed.

  In addition, as shown in FIG. 28, the molding die 40 includes a gate portion 45 that is a supply port of the sealing resin 9a, and gas (air) in the cavities 43 and 44 and an excess of the sealing resin 9a. It has a vent 46 that is an outlet. In the present embodiment, the cavities 43 and 44 have four corners, but the gate part 45 is disposed at one corner and the vent part 46 is disposed at the remaining three corners. The planar positions of the gate part 45 and the vent part 46 are shown in FIG. As shown in FIG. 28, the method of disposing the gate portion 45 on the side surface 43b of the cavity 43 is called a side gate method. In the transfer mold method, the sealing resin 9 a is supplied from the gate portion 45 into the cavities 43 and 44. And in the cavities 43 and 44, it spreads so that the circumference | surroundings of the caps 2 and 5 may be surrounded, and the whole junction part of the caps 2 and 5 is sealed. The gas (air) in the cavities 43 and 44 is pushed out by the supply pressure of the sealing resin 9 a and discharged from the vent portion 46. Then, after the cavities 43 and 44 are filled with the sealing resin 9a, the bubbles (voids) remaining in the sealing resin 9a are forcibly discharged, so that the pressure higher than the supply pressure (void removal pressure) ) In the cavities 43, 44. This is because it is preferable to remove bubbles remaining in the sealing body 9 from the viewpoint of improving the strength of the sealing body 9 shown in FIG.

  Here, from the viewpoint of sealing the joint portions of the caps 2 and 5 to reinforce the joint strength, as shown in the comparative example shown in FIG. 57, the sealing body wraps the lower surface of the cap 2 and the upper surface 5a of the cap 5. An embodiment of forming 100 is conceivable. In this case, since the interface between the sealing body 100 and the caps 2 and 5 is not exposed, the joint between the caps 2 and 5 can be sealed more reliably than in the present embodiment. However, the step of forming the sealing body 100, that is, the sealing step includes a step of applying pressure to the sealing resin 100a. When the sealing step including the step of applying pressure in the embodiment shown in FIG. 57 is performed, one or both of the caps 2 and 5 are crushed to the space 8 side by the pressure applied in the sealing step. It became clear by the inventor's examination. In the example shown in FIG. 57, the cap 5 is thinner and more easily crushed than the cap 2 because the cavity 5d is formed. When the cap 5 is crushed and the sensor chip 1 or the wire 4 and the cap 5 come into contact with each other, the reliability (detection characteristics or electrical characteristics) of the sensor chip 1 is reduced. Even if the sensor chip 1 and the cap 2 are not in contact with each other, if the cap 2 is deformed and the sealing performance of the space 8 is impaired, a part of the sealing resin 9a enters the space 8. This causes the sensor chip 1 to come into contact.

  Thus, the phenomenon that the cap 5 is crushed (hereinafter referred to as a cap deformation phenomenon) occurs due to the correlation between the pressure applied to the cap 5 and the strength of the cap 5 in the sealing process. Specifically, as shown in FIG. 57, when the sealing resin 100a is supplied so as to cover the caps 2 and 5, pressure is applied in the direction indicated by the arrow 101 in FIG. For this reason, even a sealing method other than the transfer mold method may occur depending on the pressure applied to the cap 5 and the strength of the cap 5 in the sealing process. However, in the transfer mold method, since a stronger pressure is applied than in other sealing methods, the cap deformation phenomenon tends to occur remarkably. Further, in the transfer mold method, for example, even when the cap deformation phenomenon does not occur at the stage of supplying the sealing resin 100a shown in FIG. 57, the void removal pressure is higher than the supply pressure. Therefore, it is easy to occur at this time.

  Based on the above findings, the inventors of the present application have further studied and found the following configuration that can suppress the occurrence of the cap deformation phenomenon. That is, as shown in FIGS. 25 and 26, in the sealing step, the sealing body 9 is formed so that the upper surface 5a of the cap 5 and the entire lower surface 2b of the cap 2 are exposed. As described above, the cap deformation phenomenon occurs due to the pressure applied to the caps 2 and 5 via the sealing resin 9a in the sealing process. Also in the present embodiment, the step of forming the sealing body 9, that is, the sealing step is the same as the comparative example described above in that the step of applying pressure to the sealing resin 9a is included. However, in the sealing step, if the pressure acting in the direction of crushing the caps 2 and 5 (the direction toward the space 8) is reduced, the cap deformation phenomenon can be suppressed. In the present embodiment, as shown in FIGS. 27 and 28, the top surface 43a of the cavity 43 and the upper surface 5a of the cap 5 and the bottom surface 44a of the cavity 44 and the lower surface 2b of the cap 2 are in contact with each other for sealing. Resin 9a is supplied. Therefore, in principle, the sealing resin 9a is not supplied on the upper surface 5a of the cap 5 and below the lower surface 2b of the cap 2 (however, a slight amount caused by the processing accuracy of the molding die 40 and the caps 2 and 5). Except for the sealing resin 9a that enters the gaps). Therefore, even if the supply pressure of the sealing resin 9a or the void removal pressure is applied in the sealing process, the pressure acting on the cap 5 via the sealing resin 9a is not the contact interface with the sealing resin 9a. The side surface 5c becomes only (almost strictly). Even when pressure is applied from the side surface 5c toward the space 8, the upper surface 5a of the cap 5 is supported by the cavity 43 and the lower surface 2b of the cap 2 is supported by the cavity 44, so that the cavities 43 and 44 are damaged. If the pressure is not high enough, the cap deformation phenomenon does not occur. That is, according to the present embodiment, the cap deformation phenomenon is prevented by forming the sealing body 9 so that the upper surface 5a of the cap 5 and the entire lower surface 2b of the cap 2 are exposed in the sealing process. Or can be suppressed. For this reason, the sealing performance of the space 8 can be maintained, and the sealing body 9 can be prevented or suppressed from entering the space 8. As a result, the sealing body 9 comes into contact with the sensor chip 1, and it is possible to suppress the reliability of the sensor chip 1 and the QFP 10 from being lowered due to the influence of stress or the like of the sealing body 9. The cap 5 has a flange portion 5e around the cavity portion 5d, and the flange portion 5e protrudes outside the cavity portion 5d. For this reason, in the sealing step, the protruding flange portion 5e is pressed by the sealing body 9, so that the adhesion between the sealing body 9 and the cap 5 can be improved.

  As a reference example, the inventor of the present application also examined a configuration in which the upper surface 5a of the cap 5 that is particularly easily deformed is exposed and the lower surface 2b of the cap 2 is covered with a sealing resin. As a result of the examination, since the upper surface 5a side of the cap 5 is supported by the cavity 43, if pressure is applied from the lower surface 2b side of the cap 2, the pressure is transmitted to the cap 5 through the joint portion of the caps 2 and 5. It was found that the cap deformation phenomenon occurs. That is, it has been found that it is important to expose the upper surface 5a of the cap 5 and the entire lower surface 2b of the cap 2 in order to prevent the cap deformation phenomenon.

  As described above, the cavities 43 and 44 are filled with the sealing resin 9a, air bubbles (voids) are removed, and then the sealing resin 9a is cured by heating to be sealed as shown in FIGS. Form body 9. In this heating step (baking step), for example, the sealing resin 9a is temporarily cured in the molding die 40 (see FIG. 27) (the entire sealing resin 9a is not cured, but is removed from the molding die 40). Even if the shape can be maintained). Thereafter, the lead frame 20 is taken out from the molding die 40 and transferred to a heating furnace (not shown) to fully cure the sealing resin 9a (a state in which the entire sealing resin 9a is cured). When this heating step is completed, the sealing body 9 shown in FIGS. 25 and 26 is formed. In order to easily take out the lead frame 20 from the molding die 40, an extrusion pin (ejector pin) (not shown) is attached to one or both of the molding die 40 and the extrusion pin is pushed out into the cavities 43 and 44. There is technology. In the present embodiment, from the viewpoint of reducing the external force applied to the caps 2 and 5, the push pin is disposed at a position away from the caps 2 and 5, and the sealing body 9 (preliminarily cured sealing resin 9a) is disposed. Extrusion is preferred.

  As described above, the sealing process of the present embodiment has been described. However, the sealing process is not limited to the above method as long as the entire upper surface 5a of the cap 5 and the entire lower surface 2b of the cap 2 can be exposed. The modified example can be applied. For example, in FIGS. 27 and 28, the sealing resin is in a state where the top surface 43a of the cavity 43 of the molding die 40 and the upper surface 5a of the cap 5 are in contact with the bottom surface 44a of the cavity 44 and the lower surface 2b of the cap 2, respectively. The aspect which supplies 9a was demonstrated. As a modified example, a so-called laminate mold in which a resin film (not shown) that is softer than the caps 2 and 5 and the cavities 43 and 44 is disposed between the cap 5 and the cavity 43 or between the cap 2 and the cavity 44. A scheme can be applied. If the laminate mold method is applied, the adhesion with the caps 2 and 5 can be improved, so that the sealing resin 9a that enters the upper surface 5a of the cap 5 or under the lower surface 2b of the cap 2 can be more reliably provided. Can be prevented. Moreover, since the gap resulting from the processing accuracy of the caps 2 and 5 and the molding die 40 can be filled, the occurrence of resin burrs in the molding process can be suppressed. However, in the laminate mold method, since it is necessary to replace the resin film at a high frequency, the mode described with reference to FIGS. 27 and 28 is preferable from the viewpoint of reducing the manufacturing cost. In this case, resin burrs may adhere to the upper surface 5a of the cap 5 or the lower surface 2b of the cap 2, but the resin burrs can be removed by, for example, irradiating a laser or the like.

7). Dam cut process;
FIG. 29 is an enlarged plan view showing a state where the dam portion shown in FIG. 25 is cut. Next, as a dam cutting step shown in FIG. 10, as shown in FIG. 29, the dam portion 24 formed between the plurality of leads 3 (outer lead portions 3b) and connecting the plurality of leads 3 is removed. In this step, for example, the dam portion 24 is removed by performing press working using a punch (cutting blade) and a die (support jig) (not shown). At this time, a part of the resin body (resin within the dam) formed inside the dam portion 24 (side closer to the cap 5) is also removed together with the dam portion 24. In this step, the ends of the outer lead portions 3b of the plurality of leads 3 are connected to the frame portion 20b of the lead frame. In other words, even after the dam portion 24 is removed, the plurality of leads 3 are integrally formed via the frame portion 20 b of the lead frame 20.

8). Lead Molding FIG. 30 is an enlarged plan view showing a state where the outer lead portion shown in FIG. 29 is cut and molded. Note that an enlarged cross-sectional view taken along line FF shown in FIG. 30 is similar to FIG.

  Next, as a lead forming step shown in FIG. 10, the outer lead portion 3b of the lead 3 is cut and separated from the frame portion 20b as shown in FIG. Thereafter, as shown in FIG. 6, each of the outer lead portions 3b of the plurality of leads 3 is formed into a gull wing shape. As a method for cutting the outer lead portions 3b of the plurality of leads 3, for example, a punch (cutting blade) (not shown) is arranged on the upper surface side of the lead frame 20, and a die (support jig) (not shown) is arranged on the lower surface side and pressed. Disconnect by. Moreover, the method of shape | molding the outer lead part 3b of the lead 3 can be shape | molded by pressing using the punch and die | dye for shaping | molding. By this step, the plurality of leads 3 are separated from each other and become separate bodies. Further, the plurality of leads 3 are separated from the lead frame 20 by this step. For this reason, if each member in the product formation region 20a is not supported by the frame portion 20b of the lead frame 20, it is difficult to mold. Therefore, in the present embodiment, as shown in FIG. 12, the suspension leads 14 are disposed in the region where the plurality of leads 3 are not disposed, and the suspension leads 14 are sealed with the sealing body 9 as illustrated in FIG. 7, for example. ing. As a result, the product formation region 20a is connected to and supported by the frame portion 20b of the lead frame 20 via the suspension leads 14 (see FIG. 12) until the individualization process described later is completed.

9. Separation Step FIG. 31 is an enlarged plan view showing a state in which the product formation region shown in FIG. 30 is separated from the frame portion of the lead frame and separated into pieces.

  Next, as shown in FIG. 31, the product forming region 20 a is separated from the frame portion 20 b of the lead frame 20 and separated into individual pieces as a separate step shown in FIG. 10. In this step, the suspension lead 14 (see FIG. 12), which is a connecting portion between the product formation region 20a and the frame portion 20b, is pressed using, for example, a punch (cutting blade) and a die (support jig) (not shown). To cut. At this time, the gate resin formed in the gate portion 45 and the vent resin formed in the vent portion 46 shown in FIG. 25 are respectively removed by punching.

  Through the above steps, the QFP 10 shown in FIGS. 4 to 9 is acquired. Although not shown, in addition to the above steps, a mark step for forming a product identification symbol of the QFP 10 is performed. This mark process can be formed by irradiating the upper surface 5a of the cap 5 with a laser, for example. The mark process can be performed at any timing after the cap bonding process and before the singulation process. Since the lead frame 20 of the present embodiment uses a lead frame 20 having a plurality of product formation regions 20a as shown in FIG. 11, a plurality of QFPs 10 can be obtained from one lead frame 20. . Thereafter, necessary inspections and tests such as an appearance inspection and an electrical test are performed and shipped or mounted on a mounting board (not shown).

  As shown in FIG. 13 described in the lead frame preparation step, in this embodiment, for example, nickel (Ni) is formed on the entire surface (upper surface, lower surface, and side surface) of the base material 21 made of, for example, copper (Cu). ) Or a plating film (metal film) 22 made of nickel / palladium (Ni / Pd). Further, the cap 2 has a plating film (metal) made of, for example, nickel (Ni) or nickel / palladium (Ni / Pd) on the entire surface (upper surface 2a, lower surface 2b, and side surface 2c) of the substrate 23 made of, for example, Kovar. Film) 22 is formed. That is, as shown in FIG. 6, when the QFP 10 is mounted on a mounting board (not shown), the outer lead portion 3b connected to the terminal on the mounting board side and the lower surface 2b of the cap 2 have nickel (Ni) or nickel palladium (Ni / Pd) is covered with the plating film 22. Since this plating film 22 has a function of improving the wettability of the solder material which is a bonding member when the QFP 10 is mounted on the mounting substrate, the plating step shown in parentheses in FIG. 10 can be omitted.

  However, as a modification, when the plating film 22 is not formed on the outer lead portion 3b and the lower surface 2b of the cap 2, a plating process is performed as shown in parentheses in FIG. FIG. 32 is an enlarged cross-sectional view showing a state in which an exterior plating film is formed on the exposed surfaces of the plurality of leads exposed from the sealing body and the back-side cap in the cross section taken along the line FF shown in FIG.

  When the plating step shown in FIG. 10 is performed, the exterior plating film 50 is formed on the exposed surfaces of the leads 3 (outer lead portions 3b) and the cap 2 exposed from the sealing body 9, as shown in FIG. The exterior plating film 50 is made of, for example, solder. By forming the exterior plating film 50 on the lead 3 that is an external terminal, the exterior plating film 50 is made of a solder material that is a bonding member when the QFP 10 shown in FIG. 6 is mounted on a mounting board (not shown). The wettability can be improved. In this step, the lead frame 20 that is a workpiece to be plated is placed in a plating tank (not shown) containing a plating solution (not shown), and the exterior plating film 50 is formed by, for example, electrolytic plating. To do. According to this electrolytic plating method, the exterior plating film 50 can be formed collectively in the region exposed from the sealing body 9. Therefore, the exterior plating film 50 is formed on the upper surface, the lower surface, the side surface, and the lower surface 2 b of the cap 2 of the plurality of outer lead portions 3 b.

(Embodiment 2)
In the present embodiment, as a modification of the QFP 10 described in the first embodiment, a package structure in which a cavity portion is also formed in a cap disposed on the back surface side of the sensor chip will be described. In the present embodiment, the description will focus on the differences from the semiconductor device described in the first embodiment and the manufacturing method thereof, and the description of common parts will be omitted. The drawings necessary for explaining the differences from the first embodiment are also shown, and the drawings described in the first embodiment will be cited as necessary.

<Differences in semiconductor device structure>
FIG. 33 is a plan view showing a lower surface side of a semiconductor device which is a modification example of FIG. 34 is a cross-sectional view taken along the line CC of FIG. 33, and FIG. 35 is a cross-sectional view taken along the line DD of FIG. FIG. 36 is a plan view showing a planar structure on the upper surface side in the sealing body of the semiconductor device shown in FIG. FIG. 37 is a cross-sectional view showing a modification of the semiconductor device shown in FIG. Note that the top view of the semiconductor device illustrated in FIG. 33 is similar to FIG.

  In the QFP (semiconductor device) 60 shown in FIGS. 33 to 36, the cap 61 disposed on the back surface side of the sensor chip 1 has a cavity portion (space forming portion, recess, recess, chip housing portion) 61d. This is different from the QFP 10 shown in FIGS. 4 to 9 described in the first embodiment. The QFP 60 is different from the QFP 10 (see FIGS. 4 to 9) in that a tab (die pad) 62 is provided separately from the cap 61 as a chip mounting portion for mounting a semiconductor chip. As shown in FIGS. 34 and 35, in the QFP 60, the control chip 6 and the sensor chip 1 are mounted on the tab 62, and a space 8 is interposed between the back surface 6b of the control chip 6 and the upper surface 61a of the cap 61. ing.

  The cap (first member, back surface side cap material) 61 has a structure in which the cap 5 that covers the front surface 1 a side of the sensor chip 1 is turned upside down, and covers the back surface 1 b side of the sensor chip 1. Specifically, the cap 61 includes a cap 61 having an upper surface 61a, a lower surface 61b opposite to the upper surface 61a, and a side surface 61c located between the upper surface 61a and the lower surface 61b. The cap 61 has a shape recessed toward the lower surface 61b, and has a cavity portion 61d and a flange portion (joining portion) 61e disposed so as to surround the periphery of the cavity portion 61d on the upper surface 61a side. . The cap 61 is obtained, for example, by forming a cavity portion 61d and a flange portion 61e by pressing a flat plate made of Kovar. The method for forming the cap 61 is not limited to this, and the cavity 61d and the flange 61e (projecting from the bottom surface of the flat plate) are removed by removing (drilling) a portion (center portion) of one thick flat plate. Part) may be formed. The planar size of the cavity portion 61d is such that the sensor chip 1, the control chip 6, the plurality of wires 4, and a part of the plurality of leads 3 (bonding regions 3c shown in FIG. 13) are accommodated in the same manner as the cap 5. It is the size that can be. Therefore, in this step, the sensor chip 1, the control chip 6, the plurality of wires 4, and a part of the plurality of leads 3 (bonding region 3 c) are covered with the cap 61.

  Further, the caps 5 and 61 are arranged so as to face each other, and the joining portion of the caps 5 and 61 (between the adhesive surface 5f of the flange portion 5e and the adhesive surface 61f of the flange portion 61e) is the sealing material 7 (see FIGS. 34 and 36). The point which seals and seals the space 8 is the same as that of QFP10 shown in FIGS. However, since the QFP 60 has a structure in which the cap 61 disposed on the back surface 1b side of the sensor chip 1 includes the cavity portion 61d and the flange portion 61e, for example, the adhesive 13 illustrated in FIG. The sealing material 7 is disposed around the sealing region 3d (see FIG. 13). In other words, the sealing regions 3 d of the plurality of leads 3 (and the plurality of suspension leads 14) are sealed with the sealing material 7.

  Further, the tab 62 which is a chip mounting portion for mounting the control chip 6 and the sensor chip 1 is formed integrally with the suspension lead 14 as shown in FIGS. 35 and 36, and the sealing body 9 is interposed via the suspension lead 14. It is supported by. The tab 62 is arranged in the space 8 formed by the caps 2 and 61, and is arranged with the upper surface 61 a of the cap 61 through the space 8. In other words, in the QFP 10 shown in FIGS. 4 to 9, the control chip 6 and the sensor chip 1 are directly supported by the cap 2, but the control chip 6 and the sensor chip 1 of the present embodiment are not attached to the cap 61. It is not supported directly, but is supported by the sealing body 9 via the suspension lead 14 and the tab 62.

  Here, a case where an external force different from the detection target such as a drop impact is applied to the QFP 10 or the QFP 60 will be considered. In the case of the QFP 10, since the control chip 6 and the sensor chip 1 are directly supported by the cap 2, an external force is easily transmitted to the control chip 6 and the sensor chip 1. On the other hand, in the present embodiment, the control chip 6 and the sensor chip 1 are not directly supported by the cap 61, but are supported by the suspension leads 14 in the space 8 that is a hollow space, and thus have an external force higher than that of the QFP 10. It becomes easy to absorb. For example, when an external force is transmitted into the QFP 60, the suspension lead 14 vibrates in the vertical direction (thickness direction), and the external force can be reduced by converting this vibration energy. As described above, according to the present embodiment, in addition to the effects described for the QFP 10, it is possible to further suppress the transmission of an external force such as an impact to the sensor chip 1. Therefore, it is possible to suppress a decrease in reliability of the sensor chip 1 and the semiconductor device due to the external force.

  On the other hand, the QFP 10 shown in FIGS. 4 to 9 is preferable to the QFP 60 from the viewpoint of heat dissipation, which discharges heat generated in the sensor chip 1 and the control chip 6 to the outside. By directly supporting the control chip 6 and the sensor chip 1 on the cap 2 exposed from the sealing body 9, the cross-sectional area of the heat transfer path (heat dissipation path) can be increased.

  35 and 36, as an example of the arrangement of the tab 62, an inclined portion 14a is provided in each of the plurality of suspension leads 14, and the position of the upper surface of the tab 62 is set higher than the position of the upper surface of the lead 3 (see FIG. 34). Although a so-called downset type structure is shown lowered downward, various modifications can be applied. For example, like the QFP 65 shown in FIG. 37, the upper surface of the region sealed by the sealing body 9 of the suspension lead 14 and the upper surface of the tab 62 may be positioned at the same height. However, since the sensor chip 1 is mounted on the tab 62, when the QFP 65 shown in FIG. 37 is a package having the same height as the QFP 60 shown in FIG. 35, a plurality of semiconductor chips are stacked as shown in FIG. It may not be possible. In other words, as with the QFP 60, the QFP 65 also has a higher package height (thickness increases) when the control chip 6 and the sensor chip 1 are stacked and mounted. Therefore, QFP 60 is preferable from the viewpoint of reducing the package thickness. Further, as described above, the QFP 60 has a structure in which the external force is relaxed by the suspension lead 14 vibrating in the space 8. Therefore, if the distance between the wire 4 and the lower surface 5b of the cap 5 shown in FIG. 34 is too short, the wire 4 may come into contact with the cap 5 depending on the degree of vibration. When the wire 4 and the cap 5 come into contact with each other, there is a concern that a short circuit may occur between the wires or the wire 4 may be deformed, resulting in an electrical connection failure (short circuit between the wires 4 or damage to the joint portion of the wires 4). In the QFP 60, as shown in FIG. 34, the lower surface 5b of the cap 5 and the wire 4 can be arranged in a sufficiently separated state. Therefore, QFP 60 is preferable from the viewpoint of preventing or suppressing the above-described poor electrical connection.

  35 and 36 show a so-called small tab type structure in which a semiconductor chip is mounted on a tab 62 having a smaller planar size than the mounting surface (back surface 6b) of the semiconductor chip (control chip 6). However, as a modification, the planar size of the tab 62 can be made larger than the back surface 6 b of the control chip 6. However, the small tab type structure is preferable in terms of generalization of the lead frame because a common lead frame can be used even if the size of the mounted semiconductor chip changes. The tab 62 is made of the same material (for example, copper) as the lead frame used for manufacturing the QFP 60. For this reason, the tab 62 is larger in the linear expansion coefficient difference from the sensor chip 1 than in the cap 61. Therefore, from the viewpoint of reducing the stress (thermal expansion stress or contraction stress) generated due to the difference in linear expansion coefficient, the QFP 60 that can reduce the contact area between the tab 62 and the semiconductor chip (control chip 6). Is preferred.

<Differences in semiconductor device manufacturing method>
Next, a method for manufacturing the QFP 60 shown in FIGS. 33 to 36 will be described. Also in this section, differences from the method for manufacturing the semiconductor device described in the first embodiment will be mainly described, and description of common parts will be omitted. The QFP 60 is manufactured along the assembly flow shown in FIG. 10 described in the first embodiment.

  First, in the manufacturing process of the QFP 60, the lead frame prepared in the lead frame preparing process shown in FIG. 10 is different from that of the first embodiment in the following points. Points other than the above are the same as in the first embodiment. FIG. 38 is an enlarged plan view showing a modification to FIG. 12, and FIG. 39 is a cross-sectional view taken along the line FF of FIG.

  The lead frame 63 prepared in the present embodiment uses a tab 62 as a chip mounting portion instead of the cap 2 (see FIGS. 12 and 13) used as the chip mounting portion in the first embodiment. The tab 62 is formed integrally with the lead frame 63, and is made of, for example, nickel (Ni) or nickel / palladium (Ni / Pd) on the surface of the base 21 made of copper (Cu) as shown in FIG. A plating film (metal film) 22 is formed. The plating film 22 does not necessarily have to be formed on the entire surface of each of the plurality of leads 3. However, when not formed on the entire surface, the plating film 22 is exposed from the sealing body 9 after the sealing body 9 is formed. A plating film (exterior plating film) made of a solder material (including lead-free solder) is formed on the surface (upper surface, lower surface and side surfaces) of the outer lead portion 3b. As shown in FIG. 38, the tab 62 is formed integrally with the suspension lead 14 having the inclined portions 14a, and the position of the upper surface of the tab 62 is lower than the positions of the upper surfaces of the plurality of leads 3 as shown in FIG. Is arranged. That is, the lead frame 63 prepared in the lead frame preparation process is previously subjected to downset processing (offset processing). Further, at the time of this step, the cap 61 shown in FIGS. 33 to 36 is not attached. Similarly to the cap 2 described in the first embodiment, the cap 61 can be attached to the lead frame 63 in advance, but in this case, in the semiconductor chip mounting process and the wire bonding process shown in FIG. This is because the work needs to be carried out in a state of floating in the air, and the work becomes complicated.

  Next, the semiconductor chip mounting step and the wire bonding step shown in FIG. 10 can be applied by replacing the cap 2 with the tab 62 in each step described in the above embodiment, and thus illustration and description thereof are omitted.

  Next, in the cap bonding step shown in FIG. 10, the cap 5 and the cap 61 shown in FIG. 40 are prepared, and the cap 5 is on the front surface 1 a side of the sensor chip 1 and the cap 61 is on the back surface 1 b side of the sensor chip 1. It differs from the said Embodiment 1 by the point mounted. Points other than the above are the same as in the first embodiment. FIG. 40 is an enlarged cross-sectional view showing a modification to FIG. FIG. 41 is an enlarged cross-sectional view showing a state in which the front-side cap is attached to the lead frame after the wire bonding step shown in FIG. FIG. 42 is an enlarged cross-sectional view showing a state in which the top and bottom of the lead frame shown in FIG. 41 are inverted.

  In the cap bonding process of the present embodiment, the order of mounting the cap 5 and the cap 61 is not limited to the following, but the cap 61 is mounted in a state where the wires 4 connected to the sensor chip 1 and the control chip 6 are protected. From the viewpoint, it is preferable to mount the cap 5 on the front surface 1a side first and then mount the cap 61 on the back surface 1b side. Specifically, first, as shown in FIG. 41, a stage (support base) 64 including a concave portion (dent portion) 64a and a lead holding portion 64b disposed around the concave portion 64a is prepared. The lead frame 63 is disposed on the stage 64 so as to be disposed on the lead holding portion 64b. Then, a paste-like sealing material 7 is applied on the sealing regions 3d (see FIG. 39) of the leads 3. As in the first embodiment, the cap 5 is arranged on the cap 2 so that the region where the sealing material 7 is applied and the adhesive surface 5f of the flange portion 5e of the cap 5 face each other. At this time, the control chip 6, the sensor chip 1, the plurality of wires 4, the bonding regions 3 c (see FIG. 39) of the plurality of leads 3, and the tab 62 are disposed in the cavity portion 3 d of the cap 5. Then, for example, when the cap 5 is pressed from the upper surface 5a side toward the cap 2 by a pressing jig (not shown) and the adhesive surface 5f of the flange portion 5e is pressed into the upper surface 2a side of the cap 2, the sealing material 7 is adjacent. It spreads so as to be embedded in the gap between the leads 3, and the bonding surface 5 f of the flange portion 5 e and the upper surface 2 a of the cap 2 are bonded via the sealing material 7. In this state, as shown in FIG. 42, when the cap 5 has an adhesive strength that does not drop off the lead frame 63 even when the lead frame 63 is reversed, the step of curing the sealing material 7 includes After mounting the cap 61, it can carry out collectively. On the other hand, when the adhesive strength of the sealing material 7 is low and there is a possibility that the cap 5 may fall off when reversed, the sealing material 7 is heated and cured before the cap 61 is mounted. From the viewpoint of improving the sealing performance of the space 8 shown in FIGS. 34 and 35, the former mode in which the sealing material 7 is cured in a lump is preferable.

  Next, as shown in FIG. 42, the lead frame 63 is turned upside down. That is, the lead frame 63 is arranged so that the back surface 1b of the sensor chip 1 faces upward. Then, the paste-like sealing material 7 is applied on the sealing regions 3 d (see FIG. 39) of the leads 3, in other words, on the bonding surface 5 f of the flange portion 5 e of the cap 5. Thereafter, the cap 61 shown in FIG. 40 is mounted and the sealing material 7 is heated by the same procedure as the step of mounting the cap 5, and this can be cured. In the step of mounting the cap 5, the lower surface 5 b of the cap 5 is disposed so as to face the upper surface 61 a of the cap 61, and the bonding surfaces 5 f and 61 f are bonded via the sealing material 7. If the top and bottom of the lead frame 63 are inverted again after the cap 61 is mounted, the joint between the cap 5 and the cap 61 is bonded and fixed as shown in FIG. 40, and a sealed space 8 can be formed.

  Next, in the sealing step shown in FIG. 10, the sealing body 9 is formed so that the side surface 5c of the cap 5 and the side surface 61c of the cap 61 are respectively sealed, as shown in FIG. Different from the first embodiment. Points other than the above are the same as in the first embodiment. FIG. 43 is an enlarged cross-sectional view showing a modification to FIG.

  In the sealing process of the present embodiment, as shown in FIG. 43, the sealing body 9 is formed so as to cover the side surface 5c of the cap 5 and the side surface 61c of the cap 61, respectively. On the other hand, the sealing body 9 is not formed on the upper surface 5 a of the cap 5 and below the lower surface 61 b of the cap 61, and the upper surface 5 a of the cap 5 and the lower surface 61 b of the cap 61 are exposed from the sealing body 9. For this reason, as described in the first embodiment, the pressure acting in the direction of crushing the caps 5 and 61 in the sealing process (direction toward the space 8) can be reduced, so that the cap deformation phenomenon is suppressed. can do. In the present embodiment, the side surfaces 5c and 61c are inclined surfaces that are not orthogonal to the upper surfaces 5a and 6a, respectively. For this reason, the adhesiveness of the sealing body 9 and the caps 5 and 61 can be improved. Further, since the caps 5 and 61 have flange portions 5e and 61e respectively, the joint portion of the caps 5 and 61 has a shape protruding toward the outside of the space 8 in the sealing body 9. In this way, the joint between the caps 5 and 61 has a shape protruding toward the outside of the space 8 in the sealing body 9, and this protruding portion acts as an anchor. 5 and 61 can be further improved.

  The semiconductor device and the manufacturing method thereof in the present embodiment are the same as the semiconductor device manufacturing method described in the first embodiment except for the differences described above. Therefore, although the overlapping description is omitted, the invention described in the first embodiment can be applied except for the above differences.

(Embodiment 3)
In this embodiment, as a modification of the QFP 10 described in the first embodiment, an embodiment applied to a semiconductor device on which an optical sensor chip is mounted will be described. In the present embodiment, the description will focus on the differences from the semiconductor device described in the first embodiment and the manufacturing method thereof, and the description of common parts will be omitted. The drawings necessary for explaining the differences from the first embodiment are also shown, and the drawings described in the first embodiment will be cited as necessary.

<Differences in semiconductor device structure>
44 is a plan view showing a semiconductor device which is a modification example of FIG. 4, and FIG. 45 is a cross-sectional view showing a semiconductor device which is a modification example of FIG. 46 is a plan view showing the surface side of a sensor chip which is a modification to FIG. 1, and FIG. 47 is a cross-sectional view taken along the line AA of FIG. FIG. 58 is a cross-sectional view of a semiconductor device which is a comparative example with respect to FIG.

  The QFP (semiconductor device) 70 shown in FIGS. 44 and 45 has the above-described embodiment in that a sensor chip (photosensor chip, semiconductor chip) 71 is mounted on the cap 2 (specifically, on the control chip 6). 4 is different from the QFP 10 shown in FIGS. Similarly to the sensor chip 1 shown in FIG. 2, the sensor chip 71 is located between the front surface (main surface) 1a, the back surface (main surface) 1b located on the opposite side of the front surface 1a, and between the front surface 1a and the back surface 1b. It has a side surface 1c. The sensor chip 71 is an optical sensor chip that detects irradiation light (for example, visible light) irradiated on the surface 1a side having the light receiving surface, converts the irradiation light into an electric signal, and outputs the electric signal to the outside. Therefore, in the sensor chip 71, as shown in FIGS. 46 and 47, a light receiving region 71a in which a plurality of light receiving elements (sensor circuits) for receiving light to be detected is formed on the surface 1a side. . The sensor chip 71 is formed with a signal conversion circuit that is electrically connected to the light receiving element, converts an optical signal into an electric signal, and outputs the electric signal to the outside. This signal conversion circuit (sensor circuit) is electrically connected to a plurality of pads 1 h formed on the surface 1 a side of the sensor chip 71. Moreover, since the sensor chip 71 is an optical sensor chip, it does not have a movable part such as the weight part 1g described with reference to FIGS.

  44 and 45 is mounted with a sensor chip 71 which is an optical sensor chip, the cap 72 arranged so as to cover the surface 1a side of the sensor chip 71 is the same as that described above. The structure of the cap 5 shown in FIGS. 4 to 7 described in the first embodiment is different in the following points. That is, as shown in FIG. 45, the cap 72 includes a transparent portion (transparent member) 73 that is transparent to the light that is to be detected by the sensor chip 71 and a support portion (support member) 74 that supports the transparent portion 73. ing. The transparent portion 73 is disposed on the light receiving area 71 a of the sensor chip 71. Further, the transparent portion 73 has a lower energy absorption rate with respect to the light to be detected (for example, visible light) than the sealing body 9 (that is, the transmittance of the light to be detected is higher than that of the sealing body 9. High) material, for example, glass in this embodiment. On the other hand, the support part 74 has the same structure as the cap 5 described in the first embodiment except that the opening part 74b is formed in the central part of the cavity part 5d (on the light receiving area 71a of the sensor chip 71). It has. Therefore, the same code | symbol is attached | subjected to the location which is common in the cap 5 demonstrated in the said Embodiment 1, and the overlapping description is abbreviate | omitted. However, although the upper surface 74a of the support part 74 is a surface corresponding to the upper surface 5a of the cap 5 shown in FIG. 6, in this Embodiment, the assembly of the transparent part 73 and the support part 74 is used as the cap 72. The upper surface 74 a is different from the upper surface 5 a of the cap 72. Therefore, in each figure of this Embodiment, the upper surface of the transparent part 73 is shown as the upper surface 5a. As shown in FIG. 44, the opening 74 b of the support portion 74 is disposed at the center of the upper surface 5 a, and the planar size thereof is wider than the light receiving region 71 a of the sensor chip 71. In the present embodiment, the planar size of the opening 74 b is larger than the planar size of the surface 1 a of the sensor chip 71. For this reason, the entire surface 1 a of the sensor chip 71 is visible through the transparent portion 73 in the opening 74 b. By configuring the cap 72 as described above, the light irradiated on the upper surface 5a side of the cap 72 reaches the light receiving region of the sensor chip 71 via the transparent portion 73 and the space 8 (see FIG. 45). 44 and 45, an example in which the transparent portion 73 that is a flat plate member and the support portion 74 are formed as separate members so that the transparent portion 73 that is a glass plate can be easily processed. Although shown, the transparent part 73 and the support part 74 can also be formed integrally as a modification.

  Here, when the light to be detected reaches the light receiving region 71a via the transparent portion 73 and the space 8 shown in FIG. 45, if the refractive index of the gas (for example, air) in the transparent portion 73 and the space 8 is different, The light may be refracted. As a method for suppressing the refraction of light, a configuration in which no member is disposed on the light receiving region 71a is conceivable. However, when connecting a plurality of wires 4 to the sensor chip 71, it is necessary to protect the plurality of wires 4. Therefore, a configuration in which an opening 103a is formed in the central portion on the upper surface side of the sealing body 103 and the light receiving region 71a of the sensor chip 71 is exposed in the opening 103a as in the comparative example QFP102 shown in FIG. It is done. In this case, the plurality of wires 4 can be protected by sealing them with a sealing body 103 that is a resin body. However, in the case of the QFP 102, since the sealing body 103 around the opening 103a blocks or reflects part of the light that is the detection target, from the viewpoint of stably supplying a large amount of light to the light receiving region 71a, The sealing body 103 becomes an obstruction factor.

  On the other hand, the cap 72 of the QFP 70 of this embodiment functions as a protective member that protects the plurality of wires 4 by being disposed on the cap 2 so as to cover the sensor chip 71, the control chip 6, and the plurality of wires 4. . Further, since the QFP 70 is in a state in which the entire surface 1a of the sensor chip 71 is visible in the opening 74b of the support portion 74, the amount of light received in the light receiving region 71a is increased compared to the QFP 102 shown in FIG. Can do. In addition, since the QFP 70 can increase the distance from the light receiving region 71a to the sealing body 9, it is possible to reduce the influence of reflection by the sealing body 9. Further, by widening the opening 74b, if the distance between the light receiving region 71a and the support 74 is increased, the influence of reflection by the support 74 can be reduced. Further, since the QFP 70 can visually check the entire surface 1a of the sensor chip 71, the connection state of the wires 4 can be easily observed. Moreover, since the cap 72 is formed separately from the sensor chip 71, for example, a functional member such as a lens can be easily attached. For example, if a lens (light collecting member) (not shown) is attached to the transparent portion 73 shown in FIG. 45, the amount of light received in the light receiving region 71a can be further increased. Further, for example, if an optical filter film (light selection member) (not shown) is attached to the transparent portion 73, light other than the detection target can be easily removed before reaching the light receiving region 71a.

<Differences in semiconductor device manufacturing method>
Next, a method for manufacturing QFP 70 shown in FIGS. 44 and 45 will be described. Also in this section, differences from the method for manufacturing the semiconductor device described in the first embodiment will be mainly described, and description of common parts will be omitted. In the cap bonding step described in the first embodiment, the QFP 70 is similar to the first embodiment if a cap 72 in which the transparent portion 73 and the support portion 74 shown in FIG. 45 are assembled in advance is formed. Can be manufactured. In this case, in the method of manufacturing the QFP 10 described in the first embodiment, the sensor chip 1 can be replaced with the sensor chip 71 and the cap 5 can be replaced with the cap 72. In the present embodiment, an embodiment in which the cap 72 is assembled on a lead frame will be described as a modification of the manufacturing method.

  First, in the manufacturing process of the QFP 70, the cap bonding process shown in FIG. 10 differs from the first embodiment in the following points. That is, as shown in FIGS. 48 to 50, in the cap bonding step of the present embodiment, the support portion 74 and the transparent portion 73 are sequentially stacked and mounted, and the cap 72 is assembled on the lead frame 20. Points other than the above are the same as in the first embodiment. 48 to 50 are enlarged cross-sectional views that are modifications to FIG. 21, in which FIG. 48 is a state in which a support portion is mounted, FIG. 49 is a state in which an adhesive is applied on the support portion shown in FIG. FIG. 50 is an enlarged cross-sectional view showing a state where a transparent portion is mounted on the support portion shown in FIG.

  In the cap bonding step of the present embodiment, first, as shown in FIG. 48, a support portion 74 constituting the cap 72 is mounted on the cap 2. Since the mounting method of the support part 74 is the same as the method of mounting the cap 5 described in the first embodiment, the overlapping description is omitted. Next, as shown in FIG. 49, an adhesive 75 is applied (arranged) on the upper surface 74 a of the support portion 74. The adhesive 75 is a fixing member for fixing the transparent portion 73 and the support portion 74 shown in FIG. 45, and is particularly limited as long as it has a strength capable of fixing the transparent portion 73 and the support portion 74. Not. Next, as shown in FIG. 50, the transparent portion 73 is disposed on the support portion 74 and bonded and fixed onto the support portion 74 via the adhesive material 75. Thereby, the support part 74 and the transparent part 73 are integrated, and the space 8 which is a sealed space in which the sensor chip 71, the control chip 6, and the plurality of wires 4 are built is formed.

  Here, in this embodiment, since the support part 74 and the transparent part 73 are prepared separately, the transparent part 73 can be a plate-like member. For this reason, even if the transparent part 73 is glass, it can be processed easily. Further, the support portion 74 is made of, for example, Kovar, and can be formed by, for example, pressing, like the cap 5 described in the first embodiment. The opening 74b of the support portion 74 can also be formed by pressing. Moreover, since the embodiment which assembles the cap 72 on the lead frame as in the present embodiment can be assembled using existing bonding equipment, it can be manufactured without introducing new manufacturing equipment. preferable. 48 to 50 show an embodiment in which the adhesive 75 on the paste is applied on the support portion 74, various modifications can be applied. For example, it is possible to adopt a mode in which a film-like adhesive is previously bonded to either one or both of the upper surface 74 a of the support portion 74 and the lower surface of the transparent portion 73.

  The semiconductor device and the manufacturing method thereof in the present embodiment are the same as the semiconductor device manufacturing method described in the first embodiment except for the differences described above. Therefore, although the overlapping description is omitted, the invention described in the first embodiment can be applied except for the above differences. Moreover, although this Embodiment demonstrated the modification of the said Embodiment 1, it can apply in combination with the said Embodiment 2. FIG.

<Other variations>
As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the first embodiment, a plurality of pads 6e (see FIG. 9) are arranged along two opposite sides of the four sides of the control chip 6 as shown in FIGS. The wiring layout in which the wires 4b are connected to the plurality of leads 3 arranged at positions facing the pads 6e has been described. However, the number of wires 4 and the wiring layout can be appropriately changed according to the number of required external terminals. For example, when a plurality of pads 6e are arranged on each of the four sides of the control chip 6 as in a QFP (semiconductor device) 80 shown in FIG. 51 which is a modification of FIG. 8, the pads 6e are arranged to face each other. Each lead 3 can be connected via a wire 4. Further, the above modification can be applied in combination with the second embodiment or the third embodiment.

  In the above-described embodiment and each modification, the QFP has been described as an example of a semiconductor device package type in which a space is formed in the sealed body and a semiconductor chip is arranged in the space. Can be applied. For example, a so-called QFN (Quad Flat Non-leaded package) type in which the outer lead portions 3b of the plurality of leads 3 are exposed on the lower surface of the sealing body 9 as in a semiconductor device 81 shown in FIG. It can be applied to the semiconductor device. The semiconductor device 81 is the same as the QFP 10 described in the first embodiment except that the outer lead portions 3b of the plurality of leads 3 are exposed on the lower surface of the sealing body 9, respectively. Since the QFN type semiconductor device exposes the outer lead portion 3b from the lower surface side of the sealing body 9, it can be mounted without protruding from the side surface of the sealing body 9 like QFP. Therefore, the mounting area can be made smaller than that of the QFP semiconductor device.

  Further, for example, the lead frame type semiconductor device using the lead frame as the base material on which the semiconductor chip is mounted has been described in the above-described embodiment and each modification, but the semiconductor device shown in FIG. 53 which is a modification to FIG. As shown in FIG. 82, it can be applied to a wiring board type semiconductor device in which the sensor chip 1 is mounted on the wiring board 83. The wiring board 83 includes an upper surface (chip mounting surface) 83a, a lower surface (mounting surface) 83b positioned on the opposite side of the upper surface 83a, and a side surface 83c positioned between the upper surface 83a and the lower surface 83b. The control chip 6 and the sensor chip 1 are mounted on the upper surface 83a of the wiring board 83. A plurality of bonding leads (terminals) 84 that are electrically connected to the control chip 6 and the sensor chip 1 via the wires 4 are disposed on the upper surface 83a. The bonding lead 84 is disposed around the sensor chip 1 (and the control chip 6). The lower surface 83 b of the wiring board 83 has a plurality of lands (external terminals) 85 that are external terminals of the semiconductor device 82, and solder balls (external terminals, protruding electrodes) 86 are joined to the lands 85, respectively. Has been. Further, the plurality of lands 85 are electrically connected to the plurality of bonding leads 84 on the upper surface 83 a side via the plurality of wirings 87 provided in the wiring board 83. Since the wiring board type semiconductor device can effectively utilize the lower surface 83b of the wiring board 83 as a space for arranging external terminals, even if the number of external terminals is increased, an increase in mounting area is suppressed. Can do. For example, a semiconductor device in which a plurality of lands 85 as external terminals are arranged in a matrix on the lower surface 83b of the wiring board 83 is called an area array type semiconductor device. As shown in FIG. 53, a semiconductor device 82 in which solder balls 86 are bonded to each of a plurality of lands 85 is particularly called a BGA (Ball Grid Array) type semiconductor device 82. A semiconductor device in which solder balls 86 are not joined to each of the plurality of lands 85 or a solder material that uses less solder than the solder balls 86 is formed is called an LGA (Land Grid Array) type semiconductor device. . When applied to a wiring board type semiconductor device as shown in FIG. 53, the cap 5 is mounted on the upper surface 83a which is a chip mounting surface. Specifically, the joint between the flange 5 e of the cap 5 and the upper surface 83 a of the wiring board 83 is sealed via the sealing material 7.

  Here, in the method for manufacturing the wiring board type semiconductor device 82, the upper surface 5 a of the cap 5 and the lower surface 83 b of the wiring substrate 83 are exposed from the sealing body 9 in the sealing step of forming the sealing body 9. By forming the sealing body 9, the cap deformation phenomenon described in the first embodiment can be prevented or suppressed. Since the cap 5 is disposed on the wiring substrate 83, if the upper surface 5a of the cap 5 and the lower surface 83b of the wiring substrate 83 are exposed, the pressure acting in the direction in which the cap 5 is crushed (the direction toward the space 8) is reduced. Because it can be done. 52 and 53 have been described as modifications of the QFP 10 described in the first embodiment, but can be applied in combination with the third embodiment.

  Further, for example, as a modification of the second embodiment, the QFP 65 in which only one sensor chip 1 is mounted in the package has been described. However, as a modification of the first or third embodiment, one sensor chip 1, The present invention can also be applied to a semiconductor device on which only 71 is mounted. As described above, when driving a semiconductor device on which only a sensor chip is mounted, another semiconductor device (a control chip or a package on which the control chip is mounted) on which a control circuit for controlling the sensor chip is formed is prepared. It can be driven by electrically connecting the sensor chip and the control circuit. However, from the viewpoint of reducing the mounting area, a semiconductor device in which a plurality of semiconductor chips are stacked is preferable.

  Further, for example, in the first to third embodiments, the semiconductor device in which a plurality of semiconductor chips are stacked and described has been described. However, as a semiconductor device 88 shown in FIG. A plurality of semiconductor chips (sensor chip 71 in FIG. 54) can be arranged side by side on the chip mounting part in the cavity part 5d. In particular, as shown in FIG. 54, when a plurality of optical sensor chips (sensor chips 71) are arranged side by side, by forming openings 74b wider than the sum of the surfaces 1a of the plurality of sensor chips 71, The amount of light received in the light receiving region 71a of the sensor chip 71 can be increased.

  Further, for example, in the modified examples shown in each of the first to third embodiments and FIGS. 52 to 54, the bonding portion between the base (cap 2, cap 61, wiring substrate 83) and the cap 5 is made of resin. The semiconductor device sealed with (sealing body 9) has been described. However, for example, the semiconductor device 89 shown in FIG. 55, which is a modified example of FIGS. 6, 45, 52, 53, and 54, and the semiconductor device 90 shown in FIG. 56, which is a modified example of FIG. be able to. The semiconductor devices 89 and 90 shown in FIGS. 55 and 56 are formed by overlapping the caps 2 and 5 (or caps 5 and 61) without forming the sealing body 9 (see FIGS. 6 and 34). The space 8 is sealed with the sealing material 7 (and the adhesive material 13), and the joint portions of the caps 2 and 5 (or the caps 5 and 61) are bonded and fixed with the sealing material 7 (and the adhesive material 13). . In other words, the joint portions (for example, flange portions 5e and 61e) of the caps 2 and 5 (or the caps 5 and 61) are sealed with the sealing material 7 (and the adhesive material 13) that is a resin. In the embodiment in which the sealing body 9 (see FIGS. 6 and 34) is not formed as in the semiconductor devices 89 and 90, the length of the lead 3 can be shortened as shown in FIGS. 55 and 56. For example, the planar size of the package (semiconductor device) can be made smaller than the QFP 10 shown in FIG. 6 or the QFP 60 shown in FIG. That is, the mounting area of the package (semiconductor device) can be reduced.

  However, when the sealing body 9 is not formed, the bonding strength of the caps 2 and 5 (or caps 5 and 61) is lower than the QFP 10 shown in FIG. 6 and the QFP 60 shown in FIG. Further, if the strength of the sealing material 7 and the adhesive material 13 is increased in order to suppress the breakage of the joint portion, the sealing performance between the caps 2 and 5 (or the caps 5 and 61) (gap) is impaired. There are concerns. Therefore, from the viewpoint of improving the bonding strength of the caps 2 and 5 (or caps 5 and 61), or from the viewpoint of reliably closing the gap (gap) between the caps 2 and 5 (or caps 5 and 61), As in the modifications shown in the first to third embodiments and FIGS. 52 to 54, it is preferable to seal the joint between the cap 5 and the base material with a resin (sealing body 9).

  The present invention can be applied to a semiconductor device in which a space is formed in a sealing body made of resin, and a semiconductor chip such as a sensor chip is disposed in the space.

1 Sensor chip (semiconductor chip)
1a Surface (main surface)
1b Back side (main surface)
1c Side 1d Opening 1e Support 1f Beam 1g Weight 1h Pad 1k Body 1m Back 1n Lid 1p Gap 2 Cap 2a Top 2b Bottom 2c Side 3 Lead 3a Inner lead 3b Outer lead 3c Bonding area 3d Sealing area 3e Sealing region 3f Dam region 3g Outermost region 4, 4a, 4b Wire 5 Cap 5a Upper surface 5b Lower surface 5c Side surface 5d Cavity portion 5e Flange portion 5f Adhesive surface 6 Control chip (semiconductor chip)
6a Surface (main surface)
6b Back side (main surface)
6c Side surface 6d, 6e Pad 7 Sealing material 8 Space 9 Sealing body 9a Sealing resin 10, 60, 70 QFP (semiconductor device)
11, 12, 13 Adhesive 14 Suspended lead 14a Inclined portion 20 Lead frame 20a Product forming region 20b Frame portion 20c Runner regions 21, 23 Base material 22 Film 24 Dam portion 30, 31 Pressing jig 32 Heat stage 33 Capillary 34 Wire 40 Mold 41 Upper mold 41a, 42a Mold surface (clamp surface)
42 Lower mold 43, 44 Cavity 43a Top surface 43b Side surface 44a Bottom surface 45 Gate portion 46 Vent portion 50 Exterior plating film 61 Cap 61a Upper surface 61b Lower surface 61c Side surface 61d Cavity portion 61e Flange portion 61f Adhesive surface 62 Tab 63 Lead frame 64 Stage 64a Recess 64b Lead holding part 71 Sensor chip (semiconductor chip, optical sensor chip)
71a Light receiving area 72 Cap 73 Transparent portion 74 Support portion 74a Upper surface 74b Opening portion 75 Adhesive material 81, 82, 88, 89, 90 Semiconductor device 83 Wiring board 83a Upper surface 83b Lower surface 83c Side surface 84 Bonding lead (terminal)
85 Land 86 Solder ball 87 Wiring 100, 103 Sealing body 100a Sealing resin 101 Arrow 103a Opening

Claims (27)

A method for manufacturing a semiconductor device comprising the following steps:
(A) preparing a first member having a first upper surface and a first lower surface opposite to the first upper surface;
(B) mounting a semiconductor chip having a surface, a plurality of electrode pads formed on the surface, and a back surface opposite to the surface on the first upper surface of the first member;
(C) electrically connecting the plurality of electrode pads of the semiconductor chip and the plurality of terminals disposed around the semiconductor chip through a plurality of wires;
(D) After the step (c), a second member having a second upper surface, a second lower surface opposite to the second upper surface, and a space forming portion formed on the second lower surface side is provided as the first member. The first upper surface of the second member is bonded to the first upper surface of the first member with a sealing material, and the first upper surface of the second member is bonded to the first upper surface. Forming a space for accommodating the semiconductor chip and the plurality of wires between a member and the second member;
(E) After the step (d), the second member and the first member are joined such that the entire second upper surface of the second member and the entire first lower surface of the first member are exposed. The process of sealing a part with resin. In claim 1,
The step (e) includes a step of supplying a sealing resin in a state where the first member and the second member are disposed in a cavity of a molding die, and applying a pressure to the sealing resin. A method for manufacturing a semiconductor device. In claim 2,
In the step (c), the plurality of wires are bonded to bonding regions of the plurality of terminals,
The method of manufacturing a semiconductor device, wherein the bonding regions of the plurality of terminals are disposed on the first upper surface of the first member. In claim 3,
The second member is disposed so as to surround the space forming portion, and has a flange portion having the adhesion surface.
The method of manufacturing a semiconductor device, wherein the flange portion protrudes toward the outside of the space forming portion. In claim 4,
In the step (b),
(B1) a first semiconductor chip on which a sensor circuit is formed and having a first surface, a plurality of first electrode pads formed on the first surface, and a first back surface opposite to the first surface; A second semiconductor having a control circuit for controlling the first semiconductor chip and having a second surface, a plurality of second electrode pads formed on the second surface, and a second back surface opposite to the second surface A step of preparing each of the chips,
(B2) mounting the second semiconductor chip on the first member via a first adhesive;
(B3) mounting the first semiconductor chip on the second surface of the second semiconductor chip via a second adhesive;
A method for manufacturing a semiconductor device, comprising: In claim 5,
The first member is a plate-like member made of a plate-like metal material,
The method of manufacturing a semiconductor device, wherein the plurality of terminals are bonded onto the first upper surface of the first member via an insulating adhesive. In claim 6,
In the step (d),
(D1) disposing the second member such that each of the plurality of terminals extends from the inside of the space of the second member toward the outside of the space;
(D2) embedding the sealing material between the plurality of adjacent terminals,
Each of the sealing material and the first adhesive material has a paste-like property,
The method of manufacturing a semiconductor device, wherein a viscosity of the sealing material is lower than a viscosity of the first adhesive material. In claim 2,
The semiconductor chip includes a movable part and a sensor circuit electrically connected to the movable part. In claim 2,
The semiconductor chip includes a light receiving region in which a plurality of light receiving elements are formed, and a sensor circuit electrically connected to the plurality of light receiving elements,
The method for manufacturing a semiconductor device, wherein the second member includes a transparent portion disposed on the light receiving region of the semiconductor chip and a support portion for supporting the transparent portion. In claim 9,
The support portion is formed of a metal material, and includes an upper surface that supports the transparent portion, and an opening formed on the light receiving region of the semiconductor chip,
The method of manufacturing a semiconductor device, wherein the opening is formed wider than the surface of the semiconductor chip. A method for manufacturing a semiconductor device comprising the following steps:
(A) preparing a lead frame including a die pad, a plurality of terminals arranged around the die pad, and a plurality of suspension leads formed integrally with the die pad and supporting the die pad;
(B) mounting a semiconductor chip having a surface, a plurality of electrode pads formed on the surface, and a back surface opposite to the surface on the die pad;
(C) electrically connecting the plurality of electrode pads and the plurality of terminals of the semiconductor chip via a plurality of wires, respectively;
(D) After the step (c), a second member having a second upper surface, a second lower surface opposite to the second upper surface, and a second space forming portion formed on the second lower surface side, Disposing the semiconductor chip and the plurality of wires on the lead frame so that the plurality of wires are positioned in the second space forming portion and mounting the semiconductor chip on the plurality of terminals;
(E) After the step (d), a first member having a first upper surface, a first lower surface opposite to the first upper surface, and a first space forming portion formed on the first upper surface side, The first upper surface is disposed so as to face the second lower surface of the second member, and the second adhesive surface provided on the outer side of the second space forming portion of the second member and the outer side of the first member. Bonding the provided first adhesive surface with a sealing material;
(F) After the step (e), the second member and the first member are joined such that the entire second upper surface of the second member and the entire first lower surface of the first member are exposed. The process of sealing a part with resin. In claim 11,
The step (f) includes a step of supplying a sealing resin in a state where the first member and the second member are disposed in a cavity of a molding die, and applying a pressure to the sealing resin. A method for manufacturing a semiconductor device. In claim 12,
The first member has a first flange portion that is disposed so as to surround the first space forming portion and has the first adhesive surface;
The second member is disposed so as to surround the second space forming portion, and has a second flange portion having the second adhesive surface,
The method of manufacturing a semiconductor device, wherein the first and second flange portions protrude toward the outside of the first and second space forming portions. In claim 13,
In the step (b),
(B1) a first semiconductor chip on which a sensor circuit is formed and having a first surface, a plurality of first electrode pads formed on the first surface, and a first back surface opposite to the first surface; A second semiconductor having a control circuit for controlling the first semiconductor chip and having a second surface, a plurality of second electrode pads formed on the second surface, and a second back surface opposite to the second surface A step of preparing each of the chips,
(B2) mounting the second semiconductor chip on the first member via a first adhesive;
(B3) mounting the first semiconductor chip on the second surface of the second semiconductor chip via a second adhesive;
A method for manufacturing a semiconductor device, comprising: In claim 14,
The step (e) includes a step of embedding the sealing material between the plurality of adjacent terminals,
Each of the sealing material and the first adhesive material has a paste-like property,
The method of manufacturing a semiconductor device, wherein a viscosity of the sealing material is lower than a viscosity of the first adhesive material. In claim 12,
The semiconductor chip includes a movable part and a sensor circuit electrically connected to the movable part. A first member having a first upper surface and a first lower surface opposite to the first upper surface;
The first surface has a first surface, a plurality of first electrode pads formed on the first surface, and a back surface opposite to the first surface, and is disposed on the first upper surface of the first member. A semiconductor chip;
A plurality of wires that electrically connect the plurality of electrode pads of the first semiconductor chip and the plurality of terminals disposed around the first semiconductor chip of the first member;
The second member has a second upper surface and a second lower surface opposite to the second upper surface, and is adhesively fixed on the first upper surface of the first member so as to cover the first semiconductor chip and the plurality of wires. The second member;
A space formed between the first member and the second member and accommodating the first semiconductor chip and the plurality of wires;
From a resin that seals the joint between the second member and the first member such that the entire second upper surface of the second member and the entire first lower surface of the first member are exposed. A sealing body comprising:
Including
The semiconductor device, wherein the second member is bonded to the first member via a sealing material. In claim 17,
The plurality of wires are bonded to bonding regions of the plurality of terminals,
The bonding region of the plurality of terminals is disposed on the first upper surface of the first member. In claim 18,
The second member has a flange portion that is arranged so as to surround the space and has an adhesive surface that is bonded to the first member;
The semiconductor device according to claim 1, wherein the flange portion protrudes toward the outside of the space. In claim 18,
The first semiconductor chip includes a movable part and a sensor circuit electrically connected to the movable part. In claim 20,
The semiconductor device includes:
A control circuit for controlling the first semiconductor chip is formed, and has a second surface, a plurality of second electrode pads formed on the second surface, and a second back surface opposite to the second surface. A semiconductor chip;
The semiconductor device, wherein the first semiconductor chip is mounted on the second surface of the second semiconductor chip. In claim 17,
The first member has a first space forming portion that forms the space on the first upper surface side,
The second member has a second space forming portion that forms the space on the second lower surface side,
The first semiconductor chip is
A semiconductor device, which is disposed between the first space forming portion and the second space forming portion and mounted on a die pad supported by the sealing body via a plurality of suspension leads. In claim 17,
The first semiconductor chip includes a light receiving region in which a plurality of light receiving elements are formed, and a sensor circuit electrically connected to the plurality of light receiving elements,
The second member includes a transparent portion disposed on the light receiving region of the first semiconductor chip, and a support portion that supports the transparent portion. In claim 23,
The support portion is formed of a metal material, and includes an upper surface that supports the transparent portion, and an opening formed on the light receiving region of the semiconductor chip,
The semiconductor device according to claim 1, wherein the opening is formed wider than the first surface of the first semiconductor chip. In claim 24,
A plurality of the first semiconductor chips are arranged side by side in the space,
The semiconductor device, wherein the opening is formed wider than a sum of the first surfaces of the plurality of first semiconductor chips. A method for manufacturing a semiconductor device comprising the following steps:
(A) preparing a first member having a first upper surface and a first lower surface opposite to the first upper surface;
(B) mounting a semiconductor chip having a surface, a plurality of electrode pads formed on the surface, and a back surface opposite to the surface on the first upper surface of the first member;
(C) electrically connecting the plurality of electrode pads of the semiconductor chip and the plurality of terminals disposed around the semiconductor chip through a plurality of wires;
(D) After the step (c), a second member having a second upper surface, a second lower surface opposite to the second upper surface, and a space forming portion formed on the second lower surface side is provided as the first member. The first upper surface of the second member is bonded to the first upper surface of the first member with a sealing material, and the first upper surface of the second member is bonded to the first upper surface. Forming a space for accommodating the semiconductor chip and the plurality of wires between the member and the second member; A method for manufacturing a semiconductor device comprising the following steps:
(A) preparing a lead frame including a die pad, a plurality of terminals arranged around the die pad, and a plurality of suspension leads formed integrally with the die pad and supporting the die pad;
(B) mounting a semiconductor chip having a surface, a plurality of electrode pads formed on the surface, and a back surface opposite to the surface on the die pad;
(C) electrically connecting the plurality of electrode pads and the plurality of terminals of the semiconductor chip via a plurality of wires, respectively;
(D) After the step (c), a second member having a second upper surface, a second lower surface opposite to the second upper surface, and a second space forming portion formed on the second lower surface side, Disposing the semiconductor chip and the plurality of wires on the lead frame so that the plurality of wires are positioned in the second space forming portion and mounting the semiconductor chip on the plurality of terminals;
(E) After the step (d), a first member having a first upper surface, a first lower surface opposite to the first upper surface, and a first space forming portion formed on the first upper surface side, The first upper surface is disposed so as to face the second lower surface of the second member, and the second adhesive surface provided on the outer side of the second space forming portion of the second member and the outer side of the first member. The process of adhere | attaching the provided 1st adhesive surface through a sealing material.

Images