JP2012195377A - Mark detection method and apparatus, and exposure method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To detect a plurality of marks provided in an object in shorter time and more accurately.SOLUTION: The mark detection method in which a position of a wafer mark is detected includes the steps of: measuring a defocusing amount between alignment systems AL 1, AL 21 - AL 24 and a surface of a wafer W while moving the wafer W relative to detection areas of a plurality of alignment systems AL 1, AL 21 - AL 24; controlling at least one of a surface position and a tilt angle of the wafer W based on the measurement result; and making the wafer W stand still to detect positions of wafer marks WMC 1, WMD 1 corresponding to the alignment systems AL 22, AL 23 when the wafer mark WMC 1, a wafer mark WMA 1 and the wafer mark WMD 1 reach in the detection areas of the alignment systems AL 22, AL 1, AL 23.

Description

  The present invention relates to a mark detection technique for detecting position information of a mark placed on an object such as a semiconductor wafer or a glass substrate, an exposure technique using the mark detection technique, and a device manufacturing technique using the exposure technique.

  Conventionally, for example, an exposure apparatus used in a lithography process for manufacturing a semiconductor device uses a plurality of alignment systems to maintain high overlay accuracy between a plurality of layers of a semiconductor wafer (hereinafter simply referred to as a wafer). The position of the mark (wafer mark) attached to the shot area (alignment shot) selected from the shot area is detected. Then, the detected mark position is statistically processed by, for example, the EGA method, the array coordinates of each shot area are obtained, and the wafer is driven based on the array coordinates, whereby the reticle pattern image is formed on each shot area of the wafer. Are overlaid with high precision.

  Recently, in order to perform wafer alignment efficiently, a multi-axis alignment system with three or more eyes is provided, the wafer is moved relative to these alignment systems in a predetermined direction, and the multi-axis alignment system and the wafer are aligned. And an exposure apparatus that repeatedly detects a position of a mark attached to an alignment shot in a row of a wafer with a multi-axis alignment system has been developed. 1 and Patent Document 2). In this exposure apparatus, when the defocus amounts with respect to the test marks (test surfaces) of the multi-axis alignment system are different from each other, it is difficult to simultaneously focus the test marks on these alignment systems. It is. Therefore, the defocus amount of each alignment system is measured in a state where the test mark is in the detection area of the multi-axis alignment system. Based on the measurement result, for example, a biaxial alignment system or a single-axis alignment is performed. The system sequentially performed focusing and detection of the test mark.

International Publication No. 2007/097379 Pamphlet International Publication No. 2008/029757 Pamphlet

  In the conventional wafer alignment, since a multi-axis alignment system is used, the positions of marks attached to many alignment shots on the wafer can be measured efficiently. However, the defocus amount was measured after the test mark entered the detection area of the multi-axis alignment system, and the test mark was focused on each alignment system based on this measurement result. There is a problem that it takes a long time to focus the test mark on the system.

  In view of such circumstances, it is an object of the present invention to detect position information of a plurality of marks provided on an object such as a wafer in a short time with high accuracy.

  According to the first aspect of the present invention, there is provided a mark detection method for detecting position information of a plurality of marks provided on the surface of an object. In this mark detection method, a plurality of detection areas of a plurality of mark detection systems and the object are relatively moved, and a first of the plurality of mark detection systems and the surface of the object is relatively moved during the relative movement of the object. And measuring at least one of the surface position and the inclination angle of the object based on the measurement result, and detecting when the plurality of marks reach the plurality of detection areas. Detecting the position information of the corresponding set of marks with at least two first set of mark detection systems out of the plurality of mark detection systems. It is a waste.

Moreover, according to the 2nd aspect, the exposure method which exposes an object through a pattern with exposure light is provided. The exposure method includes a step of detecting position information of a plurality of marks on the surface of the object using the mark detection method of the present invention, and a step of aligning the object and the pattern based on the detection result And.
Moreover, according to the 3rd aspect, the mark detection apparatus which detects the positional information on the some mark provided in the surface of the object is provided. The mark detection device detects a positional information of the mark and measures a defocus amount with respect to the surface of the object, and relatively detects a detection area of the mark detection system and the object. A moving mechanism that moves, a surface position control device that can control the surface position and tilt angle of the object, a mark detection system, the moving mechanism, and a control device that controls the surface position control device, and The control device drives the surface position control device based on the first defocus amount measured by the plurality of mark detection systems during the relative movement of the object by the movement mechanism to thereby determine the surface position of the object. And at least one of the inclination angles, and when the marks reach the detection areas, the detection area and the object are relatively stationary, It is intended to detect the position information of the corresponding set of marks in at least two of the first set of mark detection system of the mark detection system.

Moreover, according to the 4th aspect, the exposure apparatus which exposes an object through a pattern with exposure light is provided. This exposure apparatus includes the mark detection apparatus of the present invention, and aligns the object and the pattern based on the detection results of the mark detection systems of the mark detection apparatus.
According to the fifth aspect, the method includes forming a photosensitive pattern on an object using the exposure method or exposure apparatus of the present invention, and processing the exposed object based on the photosensitive pattern. A device manufacturing method is provided.

  According to the present invention, during the relative movement of the object, a first defocus amount between the plurality of mark detection systems and the surface of the object is measured, and for example, the plurality of mark detection systems are based on the measurement result. At least one of the surface position and the tilt angle of the object can be controlled so as to be focused on the first set of mark detection systems. After that, when the detection area and the object are relatively stationary and the position information of the corresponding set of marks is detected by the first set of mark detection systems, focusing is almost performed. Therefore, focusing on the plurality of mark detection systems can be performed in a short time, and a plurality of marks provided on the object can be detected with high accuracy in a shorter time.

It is a figure which shows schematic structure of the exposure apparatus which concerns on an example of embodiment. It is a figure which shows arrangement | positioning of the alignment system of FIG. 1, and the encoder for position measurement. It is a figure which shows the state which driven secondary alignment system AL21-AL24. (A) is a figure which shows schematic structure of the alignment system provided with the AF system of 5 eyes, (B) is a figure which shows an example of the focus signal of AF system. FIG. 2 is a block diagram showing a main configuration of a control system of the exposure apparatus in FIG. 1. (A) is a figure which shows the state which measures the first alignment shot, (B) is a figure which shows the state which measures the third alignment shot, (C) is a figure which shows an example of the arrangement | sequence of an alignment shot. (A) is a figure which shows the state which is measuring the defocus amount by the alignment system of 5 eyes, (B) is a figure which shows the state which has focused on the inner 2 eyes alignment system. (A) is a figure which shows the state which has focused on the outer 2 eyes alignment system, (B) is a figure which shows the state which has focused on the inner 2 eyes alignment system. It is a figure which shows the state which has focused on primary alignment system AL1. It is a flowchart which shows an example of an alignment and an exposure method. (A) is a plan view showing a part of a shot arrangement of a wafer, (B) is an enlarged view showing a wafer mark in FIG. 11 (A), and (C) is an explanatory view of a method for detecting a wafer mark. It is a flowchart which shows an example of the manufacturing process of an electronic device.

  An exemplary embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a schematic configuration of an exposure apparatus EX according to the present embodiment. The exposure apparatus EX is, for example, a scanning exposure type projection exposure apparatus (scanning type exposure apparatus) composed of a scanning stepper (scanner). As will be described later, in the present embodiment, the projection optical system PL is provided. In the following description, the Z-axis is taken in parallel to the optical axis AX of the projection optical system PL, and the reticle and wafer are aligned in a plane perpendicular to the Z-axis. The Y-axis is taken in the direction of relative scanning, the X-axis is taken in the direction perpendicular to the Z-axis and the Y-axis, and the rotation (tilt) directions around the X-axis, Y-axis, and Z-axis are respectively The description will be made with the θz direction.

  In FIG. 1, an exposure apparatus EX includes an illumination system 10 that illuminates a reticle R with exposure illumination light (exposure light) IL, a reticle stage RST that holds and moves the reticle R, and illumination light IL emitted from the reticle R. Is provided with a projection unit PU including a projection optical system PL that projects the projection onto the surface of the wafer W, a wafer stage WST that holds and moves the wafer W, and a control system thereof. Further, the exposure apparatus EX includes a wafer alignment apparatus 80 that detects a wafer mark as an alignment mark provided on the surface of the wafer W.

  The illumination system 10 includes a light source and an illumination optical system as disclosed in, for example, Japanese Patent Application Laid-Open No. 2001-313250 (corresponding US Patent Application Publication No. 2003/0025890), and the illumination optical system. Includes, for example, a light amount distribution forming optical system including a diffractive optical element or a spatial light modulator, an optical integrator (such as a fly-eye lens or a rod integrator), and a reticle blind (not shown). The illumination system 10 illuminates the slit-shaped illumination area IAR on the pattern surface (reticle surface) of the reticle R defined by the reticle blind with illumination light IL with a substantially uniform illuminance distribution. As the illumination light IL, for example, ArF excimer laser light (wavelength 193 nm) is used. As illumination light, KrF excimer laser light (wavelength 248 nm), harmonic of a YAG laser, harmonic of a solid laser (such as a semiconductor laser), or a bright line (such as i-line) of a mercury lamp can be used.

  On the upper surface of reticle stage RST, reticle R on which a circuit pattern or the like is formed is held, for example, by vacuum suction. The reticle stage RST can be driven minutely in the XY plane and can be driven at a scanning speed specified in the scanning direction (Y direction). Position information (including the position in the X direction, the Y direction, and the rotation angle in the θz direction) within the moving surface of the reticle stage RST is, for example, 0. 0 through the moving mirror 15 by the reticle interferometer 116 including a laser interferometer. It is always detected with a resolution of about 5 to 0.1 nm. The measurement value of reticle interferometer 116 is sent to main controller 20 in FIG. Main controller 20 controls reticle stage drive system 11 based on the measured value, thereby controlling the position and speed of reticle stage RST.

  In FIG. 1, the projection unit PU disposed below the reticle stage RST includes a lens barrel 40 and a projection optical system PL having a plurality of optical elements held in the lens barrel 40 in a predetermined positional relationship. . The projection optical system PL is, for example, telecentric on both sides (or one side on the wafer side) and has a predetermined projection magnification β (eg, 1/4 times, 1/5 times, etc.). An image of the circuit pattern of the reticle R in the illumination area IAR is formed in the exposure area IA (an area conjugate to the illumination area IAR) of one shot area of the wafer W via the projection optical system PL. Wafer W (semiconductor wafer) has a predetermined thickness (for example, several 10 to 10) of photoresist, which is a photosensitive agent (photosensitive layer), on the surface of a substrate made of, for example, disc-shaped silicon having a diameter of about 200 mm to 450 mm. (Approx. 200 nm). In each shot area of the wafer W of the present embodiment, a predetermined single layer or a plurality of layers of circuit patterns and corresponding wafer marks are formed by the pattern forming process so far.

  In the exposure apparatus EX, in order to perform exposure using the liquid immersion method, the lower end of the lens barrel 40 that holds the tip lens 191 that is the optical element on the most image plane side (wafer W side) constituting the projection optical system PL. A nozzle unit 32 constituting a part of the local liquid immersion device 8 is provided so as to surround the part periphery. The nozzle unit 32 has a supply port that can supply the exposure liquid Lq and a recovery port that can recover the liquid Lq. The supply port is connected to a liquid supply device 5 (see FIG. 5) capable of delivering the liquid Lq via a supply pipe 31A. The recovery port is connected to a liquid recovery apparatus 6 (see FIG. 5) that can recover the liquid Lq via a recovery pipe 31B.

  The liquid Lq for exposure sent from the liquid supply device 5 in FIG. 5 flows through the supply pipe 31A and the supply flow path of the nozzle unit 32 in FIG. 1, and then is supplied from the supply port to the optical path space of the illumination light IL. Is done. Further, the liquid Lq recovered from the recovery port of the nozzle unit 32 is recovered by the liquid recovery device 6 via the recovery pipe 31B. By this operation, the liquid immersion region 14 (see FIG. 2) including the optical path space of the illumination light IL between the tip lens 191 and the wafer W is filled with the liquid Lq during the scanning exposure.

  In FIG. 1, a wafer stage WST is disposed on the upper surface of a base board 12, and an interferometer system 118 (see FIG. 5) including a Y-axis interferometer 16 for measuring positional information of the wafer stage WST is provided. A measurement stage (not shown) having an apparatus for measuring the imaging characteristics of the projection optical system PL is also disposed on the upper surface of the base board 12. Wafer stage WST is provided in stage main body 91, a stage main body 91 having an XY stage 93XY (see FIG. 5) that moves in the X and Y directions, a wafer table WTB mounted on the upper surface of stage main body 91, and stage main body 91. A Z stage 93Z (see FIG. 5) that relatively finely drives the wafer table WTB (wafer W) in the Z direction, θx direction, and θy direction with respect to the stage main body 91 is provided. The XY stage 93XY and the Z stage 93Z are driven by the stage drive system 124A and the Z stage drive system 124B of FIG. 5, respectively.

  At the center of wafer table WTB, a wafer holder (not shown) for holding wafer W by vacuum suction or the like is provided. Further, the upper surface of wafer table WTB has a surface (liquid repellent surface) that is liquid repellent with respect to liquid Lq and has the same height as the surface of the wafer placed on the wafer holder, and has an outer shape ( A plate (liquid repellent plate) 28 having a low thermal expansion coefficient having a rectangular outline and a circular opening that is slightly larger than the wafer holder (wafer mounting region) is provided at the center thereof. A part of the plate 28 is provided with a reference member FM (see FIG. 2) in which a reference mark for baseline measurement is formed and a slit for measuring the position of the pattern image of the reticle R is formed. ing. On the bottom surface of the reference member FM, an aerial image measuring device 45 (see FIG. 5) that receives the light beam that has passed through the slit is provided.

  As shown in FIG. 2, a pair of Y scales 39Y1 and 39Y2 and a pair of X scales 39X1 and 39X2 for an encoder system to be described later are formed in a frame-shaped region around the plate 28. Each of the Y scales 39Y1 and 39Y2 is a diffraction grating having a predetermined pitch in the Y direction, and each of the scales 39X1 and 39X2 is a diffraction grating having a predetermined pitch in the X direction. The predetermined pitch is, for example, about 138 nm to 4 μm.

  In FIG. 1, end surfaces in the −Y direction and −X direction of wafer table WTB are each mirror-finished to be reflecting surfaces. The interferometer 16 and the like project the measurement beams onto these reflecting surfaces, respectively, and position information (X direction, Y direction position, θx direction, θy direction, θz direction angle) of the wafer stage WST in the XY plane. For example, measurement is performed with a resolution of about 0.5 to 0.1 nm, and this measurement value is supplied to the main controller 20.

  However, in this embodiment, the position information of wafer stage WST (wafer table WTB) in the XY plane is mainly measured by an encoder system described later including the above-described Y scale and X scale, and the interferometer 16 and the like. The measured value is used supplementarily when correcting long-term fluctuations in the measured value of the encoder system. The interferometer 16 is also used for measuring the position of the wafer table WTB in the Y direction in the vicinity of the unloading position and the loading position for wafer replacement.

  On the upper surface of wafer table WTB (or the upper surface of a measurement stage (not shown)), as shown in FIG. 3, a confidential bar (hereinafter referred to as CD) as a reference member made of a rod-shaped member having a rectangular cross section and a low thermal expansion coefficient. 46 (abbreviated as a bar) extends in the X direction. A plurality of reference marks M are formed in a predetermined arrangement on the upper surface of the CD bar 46. As each reference mark M, a two-dimensional mark that can be detected by a primary and secondary alignment system described later is used. The positional relationship of these reference marks M is measured in advance with high accuracy, and information on the positional relationship is stored in the storage unit of the main controller 20.

  In the exposure apparatus EX of the present embodiment, illustration is omitted in FIG. 1 from the viewpoint of avoiding complication of the drawing, but actually, as shown in FIG. 2, it passes through the optical axis AX of the projection optical system PL and Y On the straight line LV parallel to the axis, a primary alignment system AL1 having a detection center at a position spaced a predetermined distance from the optical axis AX to the −Y direction side is arranged. A two-lens secondary alignment system AL21, AL22 in which detection centers are arranged almost symmetrically with respect to the straight line LV on both sides in the X direction across a primary alignment system AL1 supported by a main frame (not shown), Secondary alignment systems AL23 and AL24 are provided. That is, the detection areas (detection centers) of the five-eye alignment systems AL1, AL21 to AL24 are arranged along the X direction.

  Each of the secondary alignment systems AL21 to AL24 is fixed to the tip (rotation end) of an arm 56 that can be rotated around the rotation center (for example, the center O). Each arm 56 can be fixed to a main frame (not shown) via a vacuum pad 58. In the present embodiment, each of the secondary alignment systems AL21 to AL24 includes at least a part thereof (for example, an optical system that irradiates the detection region with alignment light and guides light generated from the test mark in the detection region to the light receiving element). (Including the portion) is fixed to the arm 56, and the remaining portion is provided on the main frame. Under the control of the main controller 20, the X position of each detection region is adjusted by rotating the arms 56 of the secondary alignment systems AL21 to AL24 via the rotation drive mechanism 60 (see FIG. 5). . The X position of each detection area is measured by an encoder (not shown).

  In the present embodiment, as the alignment systems AL1, AL21 to AL24, for example, an image processing type FIA (Field Image Alignment) system is used. In this FIA system, a broadband detection light that does not expose the resist on the wafer is irradiated to the test mark, and an image of the test mark formed on the light receiving surface by the reflected light from the test mark is captured by an image sensor (CCD type). Alternatively, a CMOS type or the like is used to output an image signal. In this case, for example, the position of the image of the test mark is detected based on the position of a predetermined pixel in the image sensor.

  4A shows that the five-lens alignment systems AL1, AL21 to AL24 are respectively connected to the reference marks M1, M21, M22, M23, and M24 on the CD bar 46 in FIG. 3A (reference marks in FIG. 3A). (Corresponding to any of M) is detected. 4A, a primary alignment system AL1 includes a first objective lens system 5a that receives reflected light from a test mark, a beam splitter 5b that branches the reflected light, an aperture stop (not shown), It includes a second objective lens system 5c that condenses the reflected light from the first objective lens system 5a to form an enlarged image of the test mark, and a two-dimensional image sensor 5d that captures the image. Actually, for example, a beam splitter (not shown) for guiding the alignment light AL from a light source (not shown) to the test mark is provided between the second objective lens system 5c and the beam splitter 5b. Further, the field of view on the test surface conjugate with the imaging surface of the image sensor 5d is the detection region ALF1 of the primary alignment system AL1.

  The secondary alignment systems AL21 to AL24 have the same basic configuration as the primary alignment system AL1, and include an objective lens system that forms an enlarged image of the test mark and a two-dimensional image sensor 5d that captures the image. It is out. Moreover, the visual field on the test surface conjugate with the imaging surface of each imaging device of the secondary alignment systems AL21 to AL24 is the detection region ALF21 to ALF24 (see FIG. 7A). Further, as an example, a point on the test surface corresponding to the pixel (origin) at the center of the imaging device 5d of the alignment systems AL1, AL21 to AL24 is the detection center of the alignment systems AL1, AL21 to AL24.

  Imaging signals from the imaging devices 5d of the alignment systems AL1, AL21 to AL24 are supplied to the detection signal processing units 131A, 131B, 131C, 131D, and 131E, respectively. In the detection signal processing units 131A to 131E, the image pickup signals of the respective image pickup devices 5d are accumulated in a predetermined range in a direction corresponding to the Y direction and the X direction on the surface to be measured, and periodically in the X direction and the Y direction, respectively. Imaging signals SX and SY of the mark image are generated, and the imaging signals SX and SY are supplied to the alignment control unit 132. The alignment control unit 132 slices each of the imaging signals SX and SY with a predetermined threshold, for example, and obtains the amount of positional deviation in the X and Y directions with respect to the detection center of the corresponding mark. This misalignment amount is supplied to the EGA calculation unit 134 of FIG. The EGA calculation unit 134 obtains a coordinate value in the stage coordinate system (X, Y) of the test mark from the positional deviation amount, the baseline of each alignment system, and the coordinates (X, Y) of the wafer stage WST.

  In addition, in order to measure the amount of shift (defocus amount) in the Z direction between the best focus position of each alignment system AL1, AL21 to AL24 and the surface to be measured, each of the alignment systems AL1, AL21 to AL24 has the same configuration. Autofocus systems (hereinafter referred to as AF systems) 6A, 6B to 6E are mounted. As an example, the AF system 6A is for pupil division that reflects the focus detection light FL branched (or reflected) by the beam splitter 5b (or a partial reflection mirror or the like) of the primary alignment system AL1 in the vicinity of the pupil plane. A mirror 6b, a condensing lens system 6c for condensing the light from the mirror 6b to form two magnified images of the pattern on the surface to be examined, and a one-dimensional line sensor (two-dimensional) for capturing the two magnified images 6d) may be included. Actually, the AF system 6A has an optical member (not shown) that transmits light that has passed through a focus detection pattern (such as a slit pattern) illuminated by focus detection light FL from a light source (not shown) to the beam splitter 5b side. 2), and two images of the focus detection pattern are formed on the line sensor 6d. The detection signal of the line sensor 6d is supplied to the detection signal processing unit 131A. In this case, when the test surface is displaced in the Z direction by the defocus amount δF, the interval between the two pattern images on the line sensor 6d changes, and therefore the detection signal processing unit 131A uses FIG. 4B corresponding to the interval. ) Is supplied to the alignment control unit 132.

  The other AF systems 6B to 6E are configured in the same manner as the AF system 6A, and the detection signal processing units 131B to 131E to which the detection signals from the line sensors of the AF systems 6B to 6E are supplied are secondary alignment systems AL21 to AL24 ( A focus signal corresponding to the defocus amount of the test surface with respect to the best focus position of the image sensor 5d) is supplied to the alignment control unit 132. Note that as the AF systems 6A to 6E, an autofocus system using a light beam on a substantially half surface of the pupil plane can be used.

  The alignment control unit 132 obtains information on defocus amounts (δF1, δF21 to δF24 in FIG. 4A) for each of the alignment systems AL1, AL21 to AL24, which are obtained by multiplying those focus signals by a coefficient obtained in advance. Is supplied to the main controller 20. Main controller 20 uses the information on the defocus amount to adjust Z stage drive system 124B so that the test surface is focused on the best focus position of alignment systems AL1, AL21 to AL24, as will be described later. Via the Z stage 93Z in the wafer stage WST.

  Wafer alignment apparatus 80 includes alignment systems AL1, AL21 to AL24 including AF systems 6A to 6E, main controller 20, XY stage 93XY, and Z stage 93Z. In this embodiment, since the five-eye alignment systems AL1, AL21 to AL24 are provided, alignment can be performed efficiently. However, the number of alignment systems is not limited to five, and may be two or more and four or less, or six or more, or may be an even number instead of an odd number.

In the exposure apparatus EX of the present embodiment, as shown in FIG. 2, four head units 62 </ b> A to 62 </ b> D of the encoder system are arranged so as to surround the nozzle unit 32 from four directions. A plurality of Y heads 64 and X heads 66 constituting these head units 62A to 62D are fixed to the bottom surface of a main frame (not shown).
In FIG. 2, head units 62A and 62C are arranged at a predetermined interval in the X direction on a straight line LH passing through the optical axis AX of the projection optical system PL and parallel to the X axis on the ± X direction side of the projection unit PU. A plurality of Y heads 64 are provided. Y head 64 uses Y scale 39Y1 or 39Y2 to measure the position of wafer stage WST (wafer table WTB) in the Y direction with the same resolution as the laser interferometer. The head units 62B and 62D each include a plurality of X heads 66 arranged on the straight line LV passing through the optical axis AX on the ± Y direction side of the projection unit PU and parallel to the Y axis at substantially predetermined intervals in the Y direction. I have. X head 66 uses X scale 39X1 or 39X2 to measure the position of wafer stage WST (wafer table WTB) in the X direction with the same resolution as the laser interferometer. An example of the configuration of the Y head 64 and the X head 66 is disclosed in International Publication No. 2008/029757 (and the corresponding US Patent Application Publication No. 2008/094593).

  Head units 62A and 62C in FIG. 2 use multi-scale Y-axis linear encoders (hereinafter abbreviated as Y encoders) 70A and 70C that measure the Y position of wafer stage WST using Y scales 39Y1 and 39Y2, respectively. (See FIG. 5). Each of the Y encoders 70A and 70C includes a switching control unit that switches the measurement values of the plurality of Y heads 64.

  The head units 62B and 62D use X scales 39X1 and 39X2, respectively, to measure the X position of the wafer stage WST, and are multi-lens X-axis linear encoders (hereinafter abbreviated as X encoders) 70B and 70D. (See FIG. 5). Each of the X encoders 70B and 70D includes a switching control unit that switches the measurement values of the plurality of X heads 66. Furthermore, in the present embodiment, a Y-axis encoder 70E, which is a linear encoder configured by a Y head (not shown) for measuring the Y position of wafer stage WST, for example, during baseline measurement of a secondary alignment system described later. 70F (see FIG. 5) is also provided.

The measured values of the six encoders 70A to 70F described above are supplied to the main controller 20 and the EGA arithmetic unit 134, and the main controller 20 determines the XY plane of the wafer stage WST or the like based on the measured values of the encoders 70A to 70F. Control the position within.
As shown in FIG. 2, the exposure apparatus EX of the present embodiment comprises an irradiation system 90a and a light receiving system 90b, for example, Japanese Patent Laid-Open No. 6-283403 (corresponding US Pat. No. 5,448,332). Is provided with an oblique incidence type multi-point focus position detection system (hereinafter abbreviated as a multi-point AF system) having the same configuration as that disclosed in FIG. In the present embodiment, as an example, the irradiation system 90a is disposed on the −Y direction side of the head unit 62C, and the light receiving system 90b is disposed on the −Y direction side of the head unit 62A in a state of facing the irradiation system 90a. ing.

  A plurality of detection points of the multi-point AF system (90a, 90b) in FIG. 2 are arranged at predetermined intervals along the X direction in an elongated detection area AF extending in the X direction on the test surface. In the present embodiment, the plurality of detection points are arranged in a matrix of, for example, 1 row and M columns (M is the total number of detection points) or 2 rows and N columns (N is 1/2 of the total number of detection points). Since the length of the detection area AF in the X direction is set to be approximately the same as the diameter of the wafer W, position information in the Z direction can be obtained on almost the entire surface of the wafer W by scanning the wafer W once in the Y direction. (Surface position information) can be measured. Since the detection area AF is arranged between the liquid immersion area 14 (exposure area IA) and the detection areas of the alignment systems (AL1, AL21 to AL24) in the Y direction, The detection operation can be performed in parallel with the alignment system. The multipoint AF system may be provided in the main frame that holds the projection unit PU.

  Further, the head units 62C and 62A described above include a plurality of Z sensors 74 and 76 disposed along two straight lines parallel to the X axis that sandwich the straight line LH connecting the plurality of Y heads 64 and at predetermined intervals. I have. As each of the Z sensors 74 and 76, for example, a CD pickup type sensor is used. Z sensors 74 and 76 are fixed to the bottom surface of the measurement frame 21. In FIG. 2, reference numeral 78 denotes dry air whose temperature is adjusted to a predetermined temperature in the vicinity of the beam path of the multipoint AF system (90a, 90b), as indicated by the white arrow in FIG. The local air-conditioning system which ventilates by a down flow is shown. Reference symbols UP and LP are arranged in parallel at a predetermined interval in the −Y direction with respect to the projection optical system PL, respectively, and have an unload position and a loading position at which the wafer is unloaded and loaded with respect to the wafer table WTB. Show.

FIG. 5 shows the main configuration of the control system of the exposure apparatus EX. This control system is mainly configured of a main control device 20 composed of a computer that performs overall control of the entire device.
The exposure apparatus EX of the present embodiment configured as described above employs the X scale and Y scale arrangement of the wafer table WTB as described above and the X head and Y head arrangement as described above. As illustrated in FIG. 6B and the like, in the effective stroke range of wafer stage WST, X scale 39X1, 39X2 and head units 62B, 62D (X head 66) always face each other, and Y scale 39Y1. , 39Y2 and the head units 62A, 62C (Y head 64) or a Y head (not shown) are opposed to each other.

  Therefore, main controller 20 controls each motor constituting stage drive system 124A based on at least three measurement values of encoders 70A to 70F in the effective stroke range of wafer stage WST described above, thereby allowing wafers to be processed. The position of stage WST in the XY plane (including the rotation angle in the θz direction) can be controlled with high accuracy. Since the influence of the air fluctuations on the measurement values of the encoders 70A to 70F is negligibly small compared to the interferometer, the short-term stability of the measurement values caused by the air fluctuation is much better than that of the interferometer.

Hereinafter, in the exposure apparatus EX of the present embodiment, an example of the alignment and exposure operation when sequentially exposing the image of the pattern of the reticle R onto one lot of wafers under the control of the main controller 20 will be described with reference to the flowchart of FIG. Will be described with reference to FIG.
First, in step 302 in FIG. 10, the reticle R is loaded onto the reticle stage RST in FIG. 1, and the main controller 20 reads out information on the shot arrangement of the wafer to be exposed from an exposure data file (not shown). From the information, the interval (design interval) in the X direction of the wafer mark attached to each shot area of the wafer is obtained.

  The wafer shot arrangement is set as shown in FIG. 6C as an example, and is attached to, for example, 16 alignment shots (sample shots) AS selected from all shot areas of the wafer W, for example, black. The wafer mark (not shown) is measured by alignment systems AL1, AL21 to AL24. In this case, the alignment shot AS is composed of three first alignment shots, two rows of five second and third alignment shots, and three force alignment shots, with the width of four shot regions arranged in the X direction in order from the + Y direction. Has been. The wafer mark may be formed in the shot area, but in the present embodiment, the wafer mark is formed on a street line between the shot areas. Main controller 20 adjusts the positions of secondary alignment systems AL21 to AL24 in the X direction via rotational drive mechanism 60, as shown in FIG.

  Thereafter, wafer stage WST (or a measurement stage (not shown)) is driven, and as shown in FIG. 3, a plurality of reference marks M1, M21 to M24 (see FIG. 4) of CD bar 46 are aligned with alignment systems AL1, AL21 to AL21. Move to the AL24 detection area. In this state, the alignment systems AL1, AL21 to AL24 detect misalignment amounts of the reference marks M1, M21 to M24, and supply the detection results to the EGA calculation unit 134. At this time, as shown in FIG. 4A, in each of the alignment systems AL1, AL21 to AL24, for example, the detection signal of the image of the test mark detected by the image sensor 5d by moving the CD bar 46 in the Z direction. The best focus position may be the Z position when the contrast of the image becomes the maximum. Further, the focus signal may be calibrated so that the focus signal FS becomes 0 at each best focus position.

  In the present embodiment, it is assumed that the best focus position of the five-lens alignment systems AL1, AL21 to AL24 is not in a straight line, and further, the best focus position of the three-eye alignment system is not in a straight line. In the next step 304, the EGA calculation unit 134 calculates the positional deviation of the reference mark and the arrangement coordinates of the known reference marks M1, M21 to M24 supplied from the main controller 20 with respect to the detection center of the primary alignment system AL1. A secondary baseline composed of the X-direction intervals SBL1 to SBL4 of the detection centers of the secondary alignment systems AL21 to AL24 and the Y-direction intervals is calculated.

  In the next step 306, an unexposed wafer W is loaded onto wafer stage WST. In the next step 308, wafer stage WST is driven in the + Y direction, and a predetermined reference mark in reference mark member FM is moved to the detection region of primary alignment system AL1 as shown in FIG. The amount of positional deviation of the reference mark is detected. From the positional deviation amount and the position information of the reference mark, the EGA calculation unit 134 obtains the baseline of the primary alignment system AL1. In the present embodiment, since the detection of the reticle mark image of the reticle R is performed later, the baseline is corrected after the detection.

  In the next step 310, for example, a plurality of search alignment marks (not shown) on the wafer W are detected by the alignment systems AL1, AL22, AL24, thereby calculating a rough shot arrangement (search alignment) of the wafer W. In the next step 312, movement of wafer W in the + Y direction is started by driving XY stage 93XY of wafer stage WST. Thereafter, during the movement of the wafer W, in step 314, as shown in FIG. 7A, the AF system 6A to 6E of the five-lens alignment system AL1, AL22 to AL24 causes the wafer W (or plate 28) to move. The defocus amounts δF1, δF21 to δF24 from the best focus position on the surface are measured, and the measurement results are supplied to the main controller 20. Since this measurement is performed while the wafer W is moving, it is also called rough measurement of the defocus amount.

  In the next step 316 during the movement of the wafer W, the main controller 20 uses the defocus amounts δF22 and δF23 of the two inner secondary alignment systems AL22 and AL23 at this stage, so that the surface of the wafer W has two secondary surfaces. The Z stage 93Z of wafer stage WST is driven so as to match the best focus position of alignment systems AL22 and AL23, and the tilt angle and Z position (linear component) of wafer W are corrected. In the next step 318, it is determined using the search alignment result whether or not a plurality of first alignment shot wafer marks have entered the detection areas of the alignment systems AL1, AL22, AL23. If a plurality of wafer marks are not in the corresponding detection area, steps 314 and 316 are repeated. When a plurality of wafer marks enter the corresponding detection area in step 318, the process proceeds to step 320, and the wafer stage WST (wafer W) is stopped as shown in FIG.

  In the state where the wafer W is stopped in this manner, the surface of the wafer W is arranged on the inner two-lens secondary alignment systems AL22 and AL23 by the correction operation of the linear component of the wafer W in step 316 as shown in FIG. It almost matches the best focus position. In the next step 322, the focus detection light FL is irradiated by the AF systems 6A to 6E of the five-lens alignment systems AL1 and AL22 to AL24, and the defocus amount remaining from the best focus position on the surface of the wafer W is determined. Measure and supply the measurement result to the main controller 20. Since this measurement is performed while the wafer W is stopped, it is also referred to as fine measurement of the defocus amount. In the next step 322, main controller 20 drives Z stage 93Z of wafer stage WST using the result of the fine measurement, so that the surface of wafer W is positioned at the best focus position of two-lens secondary alignment systems AL22 and AL23. Focus on. At this time, the rough measurement of the defocus amount causes the surface of the wafer W to be in focus at the best focus position of the secondary alignment systems AL22 and AL23. Therefore, the fine measurement of the defocus amount in step 322 and the focus in step 324 are performed. Is performed in a very short time. Therefore, the alignment time is shortened.

  In such a focused state, as shown in FIG. 7B, under the control of the main controller 20, the two-lens secondary alignment systems AL22 and AL23 irradiate the alignment light AL, and the wafer The positional deviation amount of the corresponding wafer marks WMC1 and WMD1 on the surface of W is detected. The detection result is supplied to the EGA calculation unit 134 (the same applies hereinafter). In the next step 326, it is determined whether there is one wafer mark that has not been measured in the same row (here, the first alignment shot). At this stage, since only the central wafer mark WMA1 is not measured, the operation moves to step 328, and the wafer stage WST (Z stage 93Z) is driven in the Z direction to make the surface of the wafer W primary. The best focus position A1 of the alignment system AL1 is focused. Then, the amount of positional deviation of wafer mark WMA1 is detected by primary alignment system AL1. In the next step 330, it is determined whether or not a measurement target wafer mark (alignment shot) remains. At this stage, since the wafer mark to be measured remains, the operation returns to step 312 and the movement of the wafer W in the + Y direction is started, and defocus rough measurement (step 314). At this stage, the outer two eyes The wafer W is focused on the secondary alignment systems AL21 and AL24 (step 316).

  When the wafer mark of the second alignment shot enters the detection area of the alignment systems AL1, AL22 to AL24, the wafer W is stopped (step 320), and the fine measurement of the defocus amount is performed (step 322). In the next step 324, as shown in FIG. 8A, the main controller 20 uses the fine measurement result to make the best focus of the secondary alignment systems AL21 and AL24 of the two eyes outside the surface of the wafer W. By focusing on the position, the amount of displacement of the wafer marks WMB2 and WME2 corresponding to the two-lens secondary alignment systems AL21 and AL24 is detected.

  In the next step 326, since there are three wafer marks not measured in the same row (here, the second alignment shot), the operation returns to step 324. Then, main controller 20 uses the fine measurement result described above to focus the surface of wafer W on the best focus position of the inner two-lens secondary alignment systems AL22 and AL23, as shown in FIG. As shown, the positional deviation amounts of the wafer marks WMC2, WMD2 corresponding to the two-lens secondary alignment systems AL22, AL23 are detected. In the next step 326, only the central wafer mark WMA2 is not measured. Therefore, the operation moves to step 328, and as shown in FIG. 9, the surface of the wafer W is focused on the best focus position of the primary alignment system AL1, and the position shift amount of the wafer mark WMA2 is detected by the primary alignment system AL1.

  Similarly, by repeating steps 312 to 328, as shown in FIG. 6B, the alignment systems AL1 and AL22 to AL24 detect the positional deviation amounts of the five wafer marks in the third alignment shot. As an example, the baseline of the primary alignment system AL1 is corrected by measuring the aerial image of the reticle mark on the reticle R with the aerial image measuring device 45 during this process. Further, by repeating steps 312 to 328, the alignment systems AL1, AL22, and AL23 detect the positional deviation amounts of the three wafer marks in the force alignment shot. Thereafter, after the wafer mark to be measured disappears, the operation shifts from step 330 to step 332, and the EGA calculation unit 134 calculates all the wafers W by, for example, the EGA method from the coordinates of the wafer marks of all the alignment shots AS. The array coordinates of the shot area are calculated. Further, in parallel with the alignment, the distribution of the Z position on the surface of the wafer W is measured by the multipoint AF system (90a, 90b). Using the arrangement coordinates and the distribution of the Z position, the image of the pattern of the reticle R is scanned and exposed to each shot area of the wafer W in the next step 334. In the next step 336, the next wafer is similarly exposed.

  As described above, in the present embodiment, the wafer stage WST is moved in the Y direction, and the wafer stage WST is positioned at four positions on the movement path, so that the total is obtained using the five-lens alignment systems AL1, AL21 to AL24. The position information of the wafer mark in 16 alignment shots AS can be detected. At this time, since it is not necessary to move wafer stage WST in the X direction, the wafer stage is driven in the X direction and the Y direction using a single alignment system to sequentially detect the wafer marks. Position information of a large number of wafer marks can be obtained in a very short time. Therefore, alignment can be performed in a short time.

  As described above, the wafer alignment apparatus 80 according to the present embodiment detects five positional deviation amounts of the wafer marks WMA2 to WME2 provided on the surface of the wafer W and can measure the defocus amount with respect to the surface of the wafer W. Alignment systems AL1, AL22 to AL24, an XY stage 93XY (movement mechanism) for moving the wafer W in the Y direction with respect to the detection areas ALF1, ALF21 to ALF24 of these alignment systems, and a Z position (surface position) of the wafer W ) And a Z stage 93Z (surface position control device) capable of controlling the inclination angles in the θx direction and the θy direction, and the main control device 20. Then, main controller 20 drives Z stage 93Z based on the defocus amounts measured by alignment systems AL1, AL22 to AL24 during movement of wafer W by XY stage 93XY (step 312). At least one of the Z position and the tilt angle is controlled (steps 314 and 316), and when the wafer mark WMA2 and the like reach the detection areas ALF1, ALF21 to ALF24, the wafer W is stopped and the alignment systems AL1 and AL22 are stopped. The position information of the corresponding set of wafer marks WMB2 and WME2 is detected by the set of secondary alignment systems AL21 and AL24 among -AL24 (step 324).

  According to the present embodiment, during the movement of the wafer W, the defocus amounts between the alignment systems AL1, AL22 to AL24 and the surface of the wafer W are measured, and the secondary alignment systems AL21, AL24 are adjusted based on the measurement result. At least one of the Z position and the tilt angle of the wafer W is controlled so as to be focused. Thereafter, when the wafer W is stopped and the positional information of the corresponding wafer marks WMB2 and WME2 is detected by the secondary alignment systems AL21 and AL24, the in-focus state is substantially performed. Therefore, focusing on the secondary alignment systems AL21 and AL24 can be performed in a short time, and a plurality of wafer marks provided on the wafer W can be detected in a short time with high accuracy.

  In this embodiment, when the wafer W is stopped, the defocus amount between the alignment systems AL1, AL22 to AL24 and the surface of the wafer W is measured (step 322), and the secondary alignment system is based on the measurement result. At least one of the Z position and the tilt angle of the wafer W is controlled so as to focus the surface of the wafer W on AL21 and AL24 (part of step 324). Therefore, the test mark can be focused on the secondary alignment systems AL21 and AL24 with higher accuracy. In the focusing operation in step 316, when the surface of the wafer W is focused with an accuracy within an allowable range with respect to the secondary alignment systems AL21 and AL24, the defocus amount measurement in step 322 and the first half of step 324 are performed. The in-focus operation may be omitted.

  In this embodiment, following the mark detection by the secondary alignment systems AL21 and AL24, the Z position and the inclination angle of the wafer W are adjusted so that the surface of the wafer W is focused on the secondary alignment systems AL22 and AL23. At least one of them is controlled, and the position information of the corresponding wafer marks WMC2 and WMD2 is detected by the secondary alignment systems AL22 and AL23 (step 324). Thereafter, at least one of the Z position and the tilt angle of the wafer W is controlled so that the surface of the wafer W is focused on the primary alignment system AL1, and the position information of the corresponding wafer mark WMA2 is detected by the primary alignment system AL1. (Step 328). Therefore, the wafer mark can be efficiently detected by the five-lens alignment systems AL1, AL22 to AL24.

  The exposure apparatus EX of the present embodiment is an exposure apparatus that exposes the wafer W with the illumination light IL through the pattern of the reticle R. The exposure apparatus EX includes the wafer alignment apparatus 80 and includes alignment systems AL1 and AL22 of the wafer alignment apparatus 80. Based on the detection results of .about.AL24, the XY stage 93XY (wafer stage WST) is driven to align the wafer W with the reticle R pattern.

The exposure method using the exposure apparatus EX includes steps 308 to 330 for detecting position information of a plurality of wafer marks on the surface of the wafer W using an alignment method using the wafer alignment apparatus 80, and based on the detection result. And step 334 for scanning and exposing the wafer W while aligning the wafer W with the pattern of the reticle R.
According to these exposure apparatuses EX and exposure methods, position information of a large number of wafer marks can be detected efficiently, so that the throughput of the exposure process can be improved.

  In the present embodiment, five-eye alignment systems AL1, AL22 to AL24 are used. However, when an even number of alignment systems (for example, 4 eyes or 6 eyes) are used, focusing on the corresponding test mark and detection of position information are performed for each alignment system of 2 eyes. Good. Further, in the present embodiment, focusing is performed on the two-lens alignment system. For example, when the best focus positions of the three-lens alignment system are arranged in a straight line, these three-lens alignment systems are arranged. However, the position of the test mark may be detected simultaneously by focusing the test surface at once.

  In the present embodiment, the wafer W is moved (relatively moved) in the Y direction by the wafer stage WST with respect to the detection areas of the alignment systems AL1, AL22 to AL24. However, for example, a mechanism for moving the detection areas of the alignment systems AL1, AL22 to AL24 in the Y direction may be provided, and the detection areas of the alignment systems AL1, AL22 to AL24 may be moved in the Y direction with respect to the wafer W.

Further, a two-dimensional wafer mark 22 as shown in FIG. 11B may be used as the wafer mark in the above embodiment.
FIG. 11A shows a plurality of shot areas SA that are part of the wafer. In FIG. 11A, the width of the scribe line area SLA between the Y direction (and the X direction) of the shot area SA is set to 50 μm or less, for example, 40 μm, which is set narrower than the conventional one. It is difficult to form a conventional two-dimensional wafer mark in the scribe line area SLA. Therefore, in this modified example, as shown in the enlarged view of FIG. 11B, as a whole, elongated wafer marks 22 are used along the longitudinal direction of the scribe line area SLA.

  The wafer mark 22 has a large number of line portions 22X made up of convex portions (may be concave portions) having a predetermined line width in the X direction (longitudinal direction), and convex portions having a predetermined line width in the Y direction (short direction). A plurality of elongated line portions 22Y are arranged in the X direction (which may be concave portions). The length of the line portion 22X is slightly shorter than 40 μm, and the length of the line portion 22Y is about 100 to 300 μm (for example, about 200 μm). About 10 to 20 line portions 22X are provided symmetrically so as to sandwich the central space portion in the X direction, and several (for example, three) line portions 22Y sandwich the central space portion in the Y direction. ) Are provided symmetrically.

  When the position information of the wafer mark 22 is detected by an alignment system of an image processing system, as an example, the image of the wafer mark 22 corresponds to the X direction and the Y direction in FIG. The directions are the X direction and the Y direction in FIG. FIG. 11C also shows an image SLAP of the scribe line area SLA. As an example, the X-axis integrated signal SX is obtained by integrating the imaging signals in the Y direction within the integration region 24X including all the images 22XP of the line portions 22X in the X direction within the light receiving surface of the imaging element. The integration signal SX is sliced at a predetermined threshold value, and the center position in the X direction is set as the X position Xi of the wafer mark image 22P. On the other hand, by integrating the imaging signals in the X direction within the integration region 24Y including the images 22YP of all the line portions 22Y in the Y direction, the Y-axis integration signal SY is obtained, and the integration signal SY is sliced at a predetermined threshold value. Then, the center position in the Y direction is defined as a position Yi in the Y direction of the wafer mark image 22P. Then, for example, by multiplying the misalignment amount between the center pixel of the image sensor and the positions Xi and Yi by the reciprocal of the magnification of the alignment system, the misalignment amounts in the X direction and Y direction of the center of the wafer mark 22 are obtained. be able to.

  By using the elongated lattice-type wafer mark 22 as described above, even if the width of the scribe line area SLA between shot areas becomes narrow, a two-dimensional wafer mark can be easily arranged in the scribe line area SLA. Further, by integrating the imaging signals of the wafer mark image 22P in the Y direction and the X direction, the position of the image 22P, and hence the positional deviation amount of the wafer mark 22, can be obtained with high accuracy.

  Further, when an electronic device (microdevice) such as a semiconductor device is manufactured using the exposure apparatus (or exposure method) of the above embodiment, the electronic device has a function / performance design of the electronic device as shown in FIG. Step 221 is performed, Step 222 for fabricating a mask (reticle) based on this design step, Step 223 for fabricating a substrate (wafer) as a base material of the device, and the exposure apparatus EX (exposure method) of the above-described embodiment. A process for exposing a reticle pattern onto a substrate, a process for developing the exposed substrate, a substrate processing step 224 including heating (curing) and etching process for the developed substrate, a device assembly step (dicing process, bonding process, packaging process, etc.) 225) and the inspection step 226, etc. It is produced through.

  In other words, the device manufacturing method includes exposing a substrate (object) using the exposure apparatus or exposure method according to the above-described embodiment, and developing the exposed substrate. At this time, substrate alignment (wafer mark detection) can be efficiently performed using a plurality of alignment systems, so that devices can be mass-produced with high throughput.

In the above embodiment, a step-and-repeat type projection exposure apparatus (stepper or the like) can be used in addition to the above-described scanning exposure type exposure apparatus (scanner). Further, a dry exposure type exposure apparatus other than the immersion type exposure apparatus can be used in the same manner.
In addition, the above embodiment is not limited to an exposure apparatus for manufacturing a semiconductor device, but is used for manufacturing a display including a liquid crystal display element, a plasma display, and the like. For exposure apparatuses that transfer device patterns used in the manufacture of ceramics onto ceramic wafers, as well as exposure apparatuses that are used in the manufacture of imaging devices (CCD, etc.), organic EL, micromachines, MEMS (Microelectromechanical Systems), and DNA chips Can also be applied. In addition to an electronic device (microdevice) such as a semiconductor element, an exposure apparatus that transfers a circuit pattern onto a glass substrate or a silicon wafer to manufacture a mask used in an optical exposure apparatus and an EUV exposure apparatus. The present invention can also be applied.

  Thus, the present invention is not limited to the above-described embodiments, and various configurations can be taken without departing from the gist of the present invention.

AL1 ... primary alignment system, AL21-AL24 ... secondary alignment system, R ... reticle, W ... wafer, WST ... wafer stage, WMA1, WMC1, WMD1, WMA2-WME2 ... wafer mark, 6A-6E ... AF system of alignment system, 20 ... Main controller, 80 ... Wafer alignment device, 93XY ... XY stage, 93Z ... Z stage,

Claims (15)

In a mark detection method for detecting position information of a plurality of marks provided on the surface of an object,
Relatively moving a plurality of detection areas of the plurality of mark detection systems and the object;
During the relative movement of the object, a first defocus amount between the plurality of mark detection systems and the surface of the object is measured, and at least one of the surface position and the inclination angle of the object is controlled based on the measurement result To do
When the plurality of marks reach the plurality of detection areas, the detection area and the object are relatively stationary to detect at least two first sets of marks among the plurality of mark detection systems. Detecting position information of a corresponding set of marks in the system;
The mark detection method characterized by including. When the detection area and the object are relatively stationary,
Measuring a second defocus amount between the plurality of mark detection systems and the surface of the object;
Controlling at least one of the surface position and the tilt angle of the object so as to focus the first set of mark detection systems and the object based on the second defocus amount;
The mark detection method according to claim 1, further comprising: The plurality of mark detection systems is at least three, and the first set of mark detection systems is two;
After detecting the position information of the corresponding set of marks in the first set of mark detection systems,
At least one of the surface position and the inclination angle of the object is controlled so that the surface of the object is focused with respect to the other second set of mark detection systems, and the second set of mark detection systems responds. Detecting position information of a set of marks;
The mark detection method according to claim 1, wherein the mark detection method includes: The plurality of mark detection systems is five, and the second set of mark detection systems is two,
After detecting the position information of the corresponding set of marks in the second set of mark detection systems,
Controlling the surface position of the object so that the surface of the object is focused with respect to another mark detection system, and detecting the position information of the corresponding mark with the other mark detection system. ,
The mark detection method according to claim 3, further comprising:   The mark detection method according to any one of claims 1 to 4, wherein the detection areas of the plurality of mark detection systems are arranged substantially in a line. The mark provided on the surface of the object is:
A plurality of first line portions arranged in a first direction;
And a plurality of second line portions that are arranged in a second direction orthogonal to the first direction with a smaller number than the first line portions and are longer than the first line portions. Item 6. The mark detection method according to any one of Items 1 to 5. In an exposure method for exposing an object through a pattern with exposure light,
Detecting the position information of a plurality of marks on the surface of the object using the mark detection method according to any one of claims 1 to 6;
A step of aligning the object and the pattern based on the detection result;
An exposure method comprising: In a mark detection apparatus that detects position information of a plurality of marks provided on the surface of an object,
A plurality of mark detection systems each capable of detecting the position information of the mark and measuring a defocus amount with respect to the surface of the object;
A moving mechanism for relatively moving a detection area of the plurality of mark detection systems and the object;
A surface position control device capable of controlling a surface position and an inclination angle of the object;
A control device for controlling the mark detection system, the moving mechanism, and the surface position control device,
The controller is
During the relative movement of the object by the moving mechanism, based on the first defocus amount measured by the plurality of mark detection systems, the surface position control device is driven to determine the surface position and inclination angle of the object. Control at least one,
When the plurality of marks reach the plurality of detection areas, the detection area and the object are relatively stationary to detect at least two first sets of marks among the plurality of mark detection systems. A mark detection apparatus that detects position information of a set of corresponding marks in a system. The controller is
When the detection area and the object are relatively stationary,
Causing the plurality of mark detection systems to measure a second defocus amount with the surface of the object;
Based on the second defocus amount, at least one of the surface position and the tilt angle of the object is driven by driving the surface position control device so as to focus the first set of mark detection systems and the object. The mark detection apparatus according to claim 8, wherein: The plurality of mark detection systems is at least three, and the first set of mark detection systems is two;
The controller is
After the position information of the corresponding set of marks is detected by the first set of mark detection systems,
The stage is driven so that the surface of the object is focused with respect to another second set of mark detection systems to control at least one of the surface position and the inclination angle of the object, and the second set of mark detection systems. The mark detection apparatus according to claim 8 or 9, wherein position information of a corresponding set of marks is detected by a mark detection system. The plurality of mark detection systems is five, and the second set of mark detection systems is two,
The controller is
After the position information of the corresponding set of marks is detected by the second set of mark detection systems,
The surface position control device is driven to control the surface position of the object so that the surface of the object is focused with respect to the other one mark detection system, and the other one mark detection system responds. The mark detection apparatus according to claim 10, wherein position information of a mark to be detected is detected.   The mark detection apparatus according to any one of claims 8 to 11, wherein the detection areas of the plurality of mark detection systems are arranged in a substantially line. In an exposure apparatus that exposes an object through a pattern with exposure light,
The mark detection device according to any one of claims 8 to 12, comprising:
An exposure apparatus characterized in that the object and the pattern are aligned by driving the moving mechanism based on detection results of the plurality of mark detection systems of the mark detection apparatus. Forming a photosensitive pattern on an object using the exposure method according to claim 7;
Processing the exposed object based on the photosensitive pattern;
A device manufacturing method including: Forming a photosensitive pattern on an object using the exposure apparatus according to claim 13;
Processing the exposed object based on the photosensitive pattern;
A device manufacturing method including:

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