JP2012186533A - Manufacturing method of package, package, piezoelectric vibrator, oscillator, electronic apparatus, and radio clock - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a package which planarizes a level difference from a base substrate which is formed after a glass flit is burned and secures conductivity between the interior and the exterior of a cavity, and to provide the package, a piezoelectric vibrator, an oscillator, an electronic apparatus, and a radio clock.SOLUTION: A manufacturing method of a package has a film formation process where a film is formed by using a film formation material 39 so as to bury at least a recess 32c of a glass flit 38 which occurs at the first surface 40a side of a wafer for a base substrate 40 after the glass flit 38 is burned. In the film formation process, the film is formed using the film formation material 39 through the sputtering method or the chemical vapor deposition method.

Description

  The present invention relates to a package manufacturing method, a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.

  2. Description of the Related Art In recent years, piezoelectric vibrators (packages) that use crystal or the like as a time source, a timing source such as a control signal, a reference signal source, and the like are used in mobile phones and portable information terminal devices. Various piezoelectric vibrators of this type are known, and one of them is a surface mount (SMD) type piezoelectric vibrator. This type of piezoelectric vibrator includes, for example, a base substrate and a lid substrate made of glass materials bonded to each other, a cavity formed between both substrates, and a piezoelectric vibration housed in a hermetically sealed state in the cavity. A piece (electronic component).

  In such a piezoelectric vibrator, a through electrode is formed in a through hole formed in the base substrate, and the piezoelectric vibrating piece in the cavity and the external electrode outside the cavity are electrically connected by this through electrode ( For example, see Patent Document 1). Specifically, Patent Document 1 describes a method in which a through hole is first formed in a base substrate, and metal pins are driven into the through hole in a state where the base substrate is thermally softened. However, this method has a problem that it is difficult to completely close the gap between the metal pin and the through hole, and the airtightness in the cavity cannot be secured. In addition, it is complicated to position and insert the metal pins into all the through holes on the base substrate.

Therefore, recently, a technique has been developed in which a glass frit is filled in a gap between a through hole and a metal pin, and the glass substrate is fired to integrate the base substrate and the metal pin.
In this case, as shown in FIG. 15A, first, a box-shaped metal having a flat base portion 201 and a core portion 202 erected along the normal direction from the surface of the base portion 201. The core part 202 of the pin 203 is inserted into the through hole 205 of the base substrate 204. Subsequently, as shown in FIG. 15 (b), after filling the gap between the through hole 205 and the core part 202 with a paste-like glass frit 206, the filled glass frit 206 is fired. As a result, as shown in FIG. 15C, the glass body 207 obtained by baking the glass frit 206, the base substrate 204 (through hole 205), and the metal pin 203 are integrated. Thereafter, the base substrate 204 is polished to the broken line portion H and the base portion 201 is removed, whereby the through electrode 210 can be formed. By firing the glass frit 206, the glass particles are melted and the gaps between the glass particles are closed, so that the through holes can be closed in a tightly adhered state. Therefore, it is considered that the through hole 205 can be closed and the stable conductivity between the piezoelectric vibrating piece and the external electrode can be secured.

JP 2002-124845 A

By the way, as shown in FIG. 16, when forming the penetration electrode 210 using the metal pin 203 and the glass frit 206, the volume of the glass frit 206 is reduced by passing through a drying process or a baking process. Therefore, there is a problem that a recess 208 is formed in the upper part of the glass frit 206 (upper part in FIG. 16), and a step is generated between the through electrode 210 and the base substrate 204.
For this reason, after the through electrode 210 is formed, the external electrode formed so as to cover the through electrode having the recess 208 may be disconnected, and the electrical conductivity between the piezoelectric vibrating piece and the external electrode may be impaired. Further, it is necessary to perform a polishing step in order to flatten the step, and the larger the step, the more difficult it is to flatten by polishing. Therefore, the manufacturing process takes time and effort, and production efficiency may be reduced.

  In addition, the external electrode is generally formed of a material such as Au / Ni / Cr, but there is a problem that adhesion between these materials and the glass frit 206 is poor. As a result, the through electrode 210 formed by integrating the glass frit 206 and the core member 202 and the external electrode do not adhere well, and the electrical connection between the piezoelectric vibrating piece and the external electrode via the through electrode 210 is impaired. There is a possibility.

  Therefore, the present invention has been made in view of such circumstances, and a method for manufacturing a package that can flatten a dent generated after baking of a glass frit and ensure electrical conductivity between the inside and outside of the cavity. It is an object to provide a package, a piezoelectric vibrator, an oscillator, an electronic device, and a radio timepiece.

  In order to solve the above-described problems and achieve such an object, the package manufacturing method of the present invention can enclose an electronic component in a cavity formed between a plurality of substrates bonded to each other. A method of manufacturing a package, the through electrode forming step of forming a through electrode that penetrates the first substrate among the plurality of substrates in the thickness direction and electrically connects the inside of the cavity and the outside of the plurality of substrates. The through electrode forming step includes: a concave portion forming step of forming a concave portion on the first surface of the first substrate; a metal pin arranging step of inserting a metal pin into the concave portion; the concave portion and the metal pin; A filling step of filling a glass frit in between, a baking step of baking and hardening the glass frit filled in the recess, and after the baking step, at least on the first surface side of the first substrate A film forming step of forming a filler so as to fill the recess of the glass frit, and a polishing step of polishing the first substrate to expose the metal pins on the first surface and the second surface. The film forming step is characterized in that the filler is formed using a sputtering method or a chemical vapor deposition method.

According to this configuration, in the film forming process, the external electrode formed so as to cover the through electrode on the first surface side of the first substrate by filling the recess of the glass frit formed after the baking process with the filler. It is possible to suppress the occurrence of step breakage and to ensure the continuity between the inside and outside of the cavity. Further, by filling the dent of the glass frit, when the first surface side is polished in the polishing step, the first surface side can be easily flattened, so that the production efficiency can be improved.
In particular, by forming the filler by a film forming method such as sputtering or chemical vapor deposition, it is possible to form a dense film as compared with a conventional glass frit filled and baked. Thereby, the adhesiveness of a penetration electrode and an external electrode can be improved, and the package excellent in the electrical conductivity between the inside of a cavity and the exterior can be provided.

In the film forming step, the same material as that of the first substrate is formed.
According to this configuration, by forming the same material as that of the first substrate, the adhesion between the first substrate and the filler can be improved, so that the strength of the package can be ensured.
Furthermore, since the same material as that of the first substrate is formed, at least the entire first surface excluding the metal pins is formed of the same material. As a result, when the first surface is polished in the polishing step, the polishing rate becomes equal over the entire first surface of the first substrate, and a flat surface can be more easily formed. Therefore, the adhesion between the through electrode and the external electrode can be further improved.

Further, the first substrate is formed of soda lime glass, and soda lime glass is used as the filler.
According to this configuration, the adhesion between the through electrode and the external electrode can be further improved.

The package of the present invention is a package in which an electronic component can be enclosed in a cavity formed between a plurality of substrates bonded to each other, and the first substrate of the plurality of substrates is disposed in the thickness direction. And a through electrode that conducts between the inside of the cavity and the outside of the plurality of substrates, and the through electrode is arranged in the through hole that penetrates the first substrate. A metal pin, a glass frit filled between the through-hole and the metal pin, and a filling portion that fills a recess generated after firing the glass frit, the filling portion being formed by sputtering or chemical vapor deposition It is characterized by being formed using a method.
According to this configuration, in the film forming process, the depression of the glass frit formed after the baking process is filled with the filler, thereby suppressing the occurrence of step breakage in the external electrode formed to cover the through electrode. In addition, electrical continuity between the inside and outside of the cavity can be ensured. Further, by filling the dent of the glass frit, when the first surface side is polished in the polishing step, the first surface side can be easily flattened, so that the production efficiency can be improved.
In particular, by forming the filler by a film forming method such as sputtering or chemical vapor deposition, it is possible to form a dense film as compared with a conventional glass frit filled and baked. Thereby, the adhesiveness of a penetration electrode and an external electrode can be improved, and the package excellent in the continuity between the inside of a cavity and the exterior can be provided.

The piezoelectric vibrator according to the present invention is characterized in that a piezoelectric vibrating piece is hermetically sealed in the cavity of the package of the present invention.
According to this configuration, since the package of the present invention is provided, it is possible to provide a piezoelectric vibrator having excellent continuity between the inside and the outside of the cavity, and improve the reliability of the operation performance to improve the performance. be able to.

  The oscillator of the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to an integrated circuit as an oscillator.

  In addition, the electronic device of the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a time measuring unit.

  The radio timepiece of the present invention is characterized in that the piezoelectric vibrator of the present invention is electrically connected to a filter portion.

  In the oscillator, electronic device and radio timepiece according to the present invention, a piezoelectric vibrator having excellent vibration characteristics and excellent conductivity between the inside and outside of the cavity is provided. Can be provided.

According to the package manufacturing method and the package of the present invention, the first surface of the first substrate can be flattened to provide a package having excellent conductivity between the inside and outside of the cavity.
Further, according to the piezoelectric vibrator according to the present invention, it is possible to provide a piezoelectric vibrator having excellent conductivity between the inside and the outside of the cavity.
According to the oscillator, the electronic device and the radio timepiece according to the present invention, the piezoelectric vibrator having excellent vibration characteristics and excellent conductivity between the inside and the outside of the cavity is provided. Can provide.

1 is an external perspective view of a piezoelectric vibrator in an embodiment of the present invention. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1, and is a view of a piezoelectric vibrating piece viewed from above with a lid substrate removed. FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2. FIG. 2 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. It is a flowchart which shows the manufacturing method of a piezoelectric vibrator. It is process drawing for demonstrating the manufacturing method of a piezoelectric vibrator, Comprising: It is a disassembled perspective view of a wafer bonded body. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating a through-hole formation process and a metal pin arrangement | positioning process. It is a perspective view of a metal pin. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating a filling process. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating the process after a temporary drying process. It is sectional drawing of the wafer for base substrates, Comprising: It is process drawing for demonstrating a film-forming process and a grinding | polishing process. It is a figure which shows one Embodiment of this invention, Comprising: It is a block diagram of an oscillator. It is a figure which shows one Embodiment of this invention, Comprising: It is a block diagram of an electronic device. It is a figure which shows one Embodiment of this invention, Comprising: It is a block diagram of a radio timepiece. It is sectional drawing of a base substrate, Comprising: It is process drawing for demonstrating the formation method of the conventional penetration electrode. It is sectional drawing of the conventional base substrate.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Piezoelectric vibrator)
FIG. 1 is an external perspective view of the piezoelectric vibrator according to the present embodiment as viewed from the lid substrate side. FIG. 2 is an internal configuration diagram of the piezoelectric vibrator, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG. 2, and FIG. 4 is an exploded perspective view of the piezoelectric vibrator.
As shown in FIGS. 1 to 4, the piezoelectric vibrator 1 of the present embodiment includes a box-shaped package 10 in which a base substrate (first substrate) 2 and a lid substrate 3 are anodically bonded via a bonding material 23, A surface-mounted piezoelectric vibrator 1 including a piezoelectric vibrating piece (electronic component) 5 housed in a cavity C of a package 10. Then, the piezoelectric vibrating reed 5 and the external electrodes 6, 7 installed on the back surface 2 a (the lower surface in FIG. 3: the first surface) of the base substrate 2 are formed by a pair of through electrodes 8, 9 penetrating the base substrate 2. Electrically connected.

  The base substrate 2 is formed in a plate shape with a transparent insulating substrate made of a glass material, for example, soda-lime glass. The base substrate 2 is formed with a pair of through holes (recesses) 21 and 22 in which a pair of through electrodes 8 and 9 are formed. The through-holes 21 and 22 have a taper-shaped cross section in which the diameter gradually decreases from the back surface 2a of the base substrate 2 toward the front surface 2b (upper surface in FIG. 3).

  Similar to the base substrate 2, the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape that can be superimposed on the base substrate 2. A rectangular recess 3 a for accommodating the piezoelectric vibrating reed 5 is formed on the inner surface 3 b (lower surface in FIG. 3) side of the lid substrate 3. The concave portion 3 a forms a cavity C that accommodates the piezoelectric vibrating piece 5 when the base substrate 2 and the lid substrate 3 are overlaid. The lid substrate 3 is anodically bonded to the base substrate 2 via the bonding material 23 with the recess 3a facing the base substrate 2 side. That is, the inner surface 3 b side of the lid substrate 3 constitutes a recess 3 a formed in the center and a frame region 3 c formed around the recess 3 a and serving as a bonding surface with the base substrate 2.

The piezoelectric vibrating piece 5 is a tuning fork type vibrating piece formed from a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied.
This piezoelectric vibrating piece 5 is a tuning fork type comprising a pair of vibrating arm portions 24 and 25 arranged in parallel and a base portion 26 that integrally fixes the base end sides of the pair of vibrating arm portions 24 and 25. On the outer surface of the vibrating arm portions 24, 25, there are formed an excitation electrode comprising a pair of first excitation electrode and second excitation electrode (not shown) for vibrating the vibrating arm portions 24, 25, and a first excitation electrode. And a pair of mount electrodes that electrically connect the second excitation electrode and routing electrodes 27 and 28 described later (both not shown).

2 and 3, the piezoelectric vibrating reed 5 configured as described above is bumped on the lead-out electrodes 27 and 28 formed on the surface 2b of the base substrate 2 by using the bump B such as gold. It is joined. More specifically, the first excitation electrode of the piezoelectric vibrating piece 5 is bump-bonded on one lead-out electrode 27 via one mount electrode and bump B, and the second excitation electrode is connected to the other mount electrode and Bump bonding is performed on the other lead-out electrode 28 via the bump B.
As a result, the piezoelectric vibrating reed 5 is supported in a state of floating from the surface 2b of the base substrate 2, and the mount electrodes and the routing electrodes 27 and 28 are electrically connected to each other.

  The external electrodes 6 and 7 are installed on both sides in the longitudinal direction on the back surface 2 a of the base substrate 2, and are electrically connected to the piezoelectric vibrating reed 5 through the through electrodes 8 and 9 and the routing electrodes 27 and 28. ing. More specifically, one external electrode 6 is electrically connected to one mount electrode of the piezoelectric vibrating piece 5 through one through electrode 8 and one routing electrode 27. The other external electrode 7 is electrically connected to the other mount electrode of the piezoelectric vibrating piece 5 through the other through electrode 9 and the other lead-out electrode 28.

  The through-electrodes 8 and 9 are formed by the cylindrical body 32 and the core member 31 that are integrally fixed to the through-holes 21 and 22 by firing, and completely close the through-holes 21 and 22 to form a cavity. The airtightness in C is maintained, and the external electrodes 6 and 7 and the routing electrodes 27 and 28 are electrically connected. Specifically, one through electrode 8 is positioned below the lead-out electrode 27 between the external electrode 6 and the base portion 26, and the other through electrode 9 is between the external electrode 7 and the vibrating arm portion 25. Is located below the routing electrode 28.

  The cylindrical body 32 is flat at both ends and is formed to have substantially the same thickness as the base substrate 2, and the outer shape of the cylindrical body 32 has a truncated cone shape (tapered cross section) according to the shape of the through holes 21 and 22. It is formed as follows. Moreover, the cylinder 32 in this embodiment is comprised by the 1st glass body 32a and the 2nd glass body (filling part) 32b.

  The first glass body 32 a is baked in a state where a paste-like glass frit 38 (see FIG. 9) is embedded between the through holes 21 and 22 and the core member 31. , 22 firmly. Specifically, the first glass body 32 a is formed so as to fill the through holes 21 and 22 over substantially the entire region in the thickness direction of the base substrate 2. In this case, the end surface on the one end side in the thickness direction of the first glass body 32 a is formed flush with the surface 2 b of the base substrate 2 and is exposed in the cavity C together with the core part 31. On the other hand, the end surface on the other end side in the thickness direction of the first glass body 32 b has a recess 32 c that is recessed in a concave shape on the front surface 2 b side with respect to the back surface 2 a of the base substrate 2.

Similarly to the base substrate 2, the second glass body 32 b is made of a glass material, for example, soda lime glass, and is in a space surrounded by the recesses 32 c of the first glass body 32 a, the through holes 21 and 22, and the core portion 31. Is formed to fill. In this case, the end surface on the one end side in the thickness direction of the second glass body 32b is in close contact with the first glass body 32a. On the other hand, the end surface on the other end side in the thickness direction of the second glass body 32 b is formed flush with the back surface 2 a of the base substrate 2 and is exposed to the outside together with the core part 31.
And the core part 31 is distribute | arranged to the center of the cylinder 32 (1st glass body 32a and 2nd glass body 32b) so that the center hole of the cylinder 32 may be penetrated.

  The core material portion 31 described above is a conductive core material formed in a cylindrical shape from a metal material, and both ends are flat like the cylindrical body 32 and have a thickness substantially the same as the thickness of the base substrate 2. Is formed. When the through electrodes 8 and 9 are formed as finished products, the core portion 31 is formed in a columnar shape and has the same thickness as the base substrate 2 as described above. In the process, as shown in FIG. 8 to be described later, a box-shaped metal pin 37 is formed together with a flat base portion 36 connected to one end portion of the core portion 31.

  A bonding material 23 for anodic bonding is formed on the entire inner surface 3 b of the lid substrate 3. Specifically, the bonding material 23 is formed over the entire inner surface of the frame region 3c and the recess 3a. Although the bonding material 23 of the present embodiment is formed of a Si film, the bonding material 23 can also be formed of Al. As the bonding material 23, a Si bulk material whose resistance is reduced by doping or the like can be used. As will be described later, the bonding material 23 and the base substrate 2 are anodically bonded, and the cavity C is vacuum-sealed.

  When the piezoelectric vibrator 1 configured as described above is operated, a predetermined drive voltage is applied to the external electrodes 6 and 7 formed on the base substrate 2. As a result, a current can be passed through each excitation electrode of the piezoelectric vibrating piece 5, and the pair of vibrating arm portions 24 and 25 can be vibrated at a predetermined frequency in a direction in which the pair of vibrating arm portions 24 and 25 approach and separate. The vibration of the pair of vibrating arm portions 24 and 25 can be used as a time source, a control signal timing source, a reference signal source, or the like.

(Piezoelectric vibrator manufacturing method)
Next, a method for manufacturing the above-described piezoelectric vibrator will be described. FIG. 5 is a flowchart of the method for manufacturing the piezoelectric vibrator according to this embodiment. FIG. 6 is an exploded perspective view of the wafer bonded body. Hereinafter, a plurality of piezoelectric vibrating reeds 5 are encapsulated between a base substrate wafer 40 in which a plurality of base substrates 2 are connected and a lid substrate wafer 50 in which a plurality of lid substrates 3 are connected to form a wafer bonded body 60. A method for simultaneously manufacturing a plurality of piezoelectric vibrators 1 by cutting the wafer bonded body 60 will be described. A broken line M shown in FIG. 6 illustrates a cutting line that is cut in the cutting process.
As shown in FIG. 5, the piezoelectric vibrator manufacturing method according to this embodiment mainly includes a piezoelectric vibrating piece manufacturing step (S10), a lid substrate wafer manufacturing step (S20), and a base substrate wafer manufacturing step. (S30) and an assembly process (S50 and below). Among them, the piezoelectric vibrating piece producing step (S10), the lid substrate wafer producing step (S20) and the base substrate wafer producing step (S30) can be performed in parallel.

  First, the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 5 shown in FIGS. 1 to 4 (S10). Further, after the piezoelectric vibrating piece 5 is manufactured, the resonance frequency is coarsely adjusted. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting.

(Wad production process for lid substrate)
Next, as shown in FIGS. 5 and 6, a lid substrate wafer manufacturing process is performed in which a lid substrate wafer 50 to be the lid substrate 3 later is manufactured up to the state immediately before anodic bonding (S20).
Specifically, after polishing and cleaning soda-lime glass to a predetermined thickness, a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like (S21). Next, a recess forming step is performed for forming a plurality of recesses 3a for the cavity C in the matrix direction by etching or the like on the first surface 50a (the lower surface in FIG. 6) of the lid substrate wafer 50 (S22).
Next, in order to ensure airtightness with the base substrate wafer 40 to be described later, a polishing step of polishing at least the first surface 50a side of the lid substrate wafer 50 that is a bonding surface with the base substrate wafer 40. (S23) is performed, and the first surface 50a is mirror-finished.

Next, a bonding material forming step (S24) for forming the bonding material 23 on the entire first surface 50a of the lid substrate wafer 50 (the bonding surface with the base substrate wafer 40 and the inner surface of the recess 3a) is performed. In this manner, by forming the bonding material 23 on the entire first surface 50a of the lid substrate wafer 50, patterning of the bonding material 23 becomes unnecessary, and the manufacturing cost can be reduced. The bonding material 23 can be formed by a film forming method such as sputtering or CVD. Further, since the bonding surface is polished before the bonding material forming step (S24), the flatness of the surface of the bonding material 23 is ensured, and stable bonding with the base substrate wafer 40 can be realized.
The lid substrate wafer creation step (S20) is thus completed.

(Base substrate wafer creation process)
Next, a base substrate wafer manufacturing step is performed in which the base substrate wafer 40 to be the base substrate 2 later is manufactured up to the state immediately before anodic bonding (S30). First, after polishing and washing soda-lime glass to a predetermined thickness, a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31).

(Penetration electrode formation process)
Next, a through electrode forming step for forming through electrodes 8 and 9 (see FIG. 3) that penetrate the base substrate wafer 40 in the thickness direction and conduct the inside of the cavity C and the outside of the piezoelectric vibrator 1 (S32). I do. Details of the through electrode forming step (S32) will be described below. FIG. 7 is a cross-sectional view of the base substrate wafer, and is a process diagram for explaining a through hole forming process and a metal pin arranging process.
In the through electrode forming step (S32), first, as shown in FIG. 7, a through hole forming step (S33: concave portion forming step) for forming a plurality of pairs of through holes 21, 22 penetrating the base substrate wafer 40 is performed. Specifically, after forming a recess from the first surface 40a of the base substrate wafer 40 by pressing or the like, the recess is polished at least from the second surface 40b side of the base substrate wafer 40 to the broken line portion T1. Through holes 21 and 22 can be formed. Thus, the through holes 21 and 22 can be formed so that the inner diameter gradually increases from the second surface 40b side to the first surface 40a side of the base substrate wafer 40 (base substrate 2).

Then, the metal pin arrangement | positioning process which arrange | positions the core material part 31 of a metal pin in the several through-holes 21 and 22 formed at the through-hole formation process (S33) is performed (S34). FIG. 8 is a perspective view of the metal pin.
As shown in FIG. 8, the metal pin 37 is formed along a flat base portion 36 and a direction substantially perpendicular to the surface of the base portion 36 from the top of the base portion 36, and the tip is formed flat. And a core part 31.

  Then, as shown in FIG. 7B, the core portion 31 of the metal pin 37 is inserted from the small diameter side of the through holes 21 and 22 (the second surface 40b side of the base substrate wafer 40). At this time, the core member 31 is inserted until the surface of the base portion 36 of the metal pin 37 contacts the second surface 40 b of the base substrate wafer 40. Here, it is necessary to arrange the metal pin 37 so that the axial direction of the core part 31 and the axial direction of the through holes 21 and 22 substantially coincide. However, since the metal pin 37 in which the core part 31 is formed on the base part 36 is used, the shaft of the core part 31 can be easily operated by simply pushing the base part 36 until it contacts the base substrate wafer 40. The direction and the axial direction of the through holes 21 and 22 can be made substantially coincident. Therefore, workability at the time of the metal pin arranging step (S34) can be improved.

(Glass frit filling process)
FIG. 9 is a sectional view of the base substrate wafer and is a process diagram for explaining a filling process.
As shown in FIG. 9A, the base substrate wafer 40 on which the metal pins 37 are set is transported into the vacuum printing apparatus, and the through-holes 21 and 22 are filled with a paste-like glass frit 38 ( S35) is performed. In the filling step (S35) of this embodiment, the squeegee (the first squeegee 45 and the second squeegee 46) is scanned along the first surface 40a of the base substrate wafer 40 in a chamber (not shown) of the vacuum printing apparatus. Thus, the glass frit 38 is filled from the large diameter side of the through holes 21 and 22 (the first surface 40a side of the base substrate wafer 40). The vacuum printing apparatus according to the present embodiment holds a base substrate wafer 40 by a jig (not shown) and a moving mechanism (not shown) so that they can be scanned in opposite directions along the first surface 40a of the base substrate wafer 40. The first squeegee 45 (see FIG. 9A) and the second squeegee 46 (see FIG. 9C) are provided. The glass frit 38 used in the present embodiment is a paste material mainly composed of powdery glass particles and a binder made of an organic solvent and ethyl cellulose.

  In starting the filling step (S35), first, the base substrate wafer 40 is set on a jig (not shown) of the vacuum printing apparatus with the first surface 40a (the large diameter side of the through holes 21 and 22) facing upward. At the same time, a metal mask (not shown) is disposed on the first surface 40 a of the base substrate wafer 40. The metal mask is for preventing the glass frit 38 from wrapping around the second surface 40b of the base substrate wafer 40. The metal mask covers the peripheral edge of the base substrate wafer 40, and an opening is formed in the central portion. Has been. Next, the inside of the chamber of the vacuum printing apparatus is evacuated to make the inside of the chamber have a reduced pressure atmosphere (for example, about 0.5 to 1 torr).

  Then, the glass frit 38 is supplied onto the metal mask on the near side in the scanning direction of the first squeegee 45. Subsequently, the first squeegee 45 is moved along the first surface 40 a of the base substrate wafer 40 in a state where the tip of the first squeegee 45 is in contact with the metal mask (the first surface 40 a of the base substrate wafer 40). Scan (first scanning step (S35A)). At this time, for example, the first squeegee is directed from one radial side to the other side of the base substrate wafer 40 so that the first surface 40a of the base substrate wafer 40 and the scanning surface of the first squeegee 45 are parallel to each other. 45 is scanned (see arrow in FIG. 9A).

When the first squeegee 45 is scanned, the glass frit 38 flows so as to be pushed along the scanning direction of the first squeegee 45 by the tip of the first squeegee 45. Thereby, the glass frit 38 is leveled along the base substrate wafer 40. When the first squeegee 45 is scanned along the opening edges of the through holes 21 and 22, the glass frit 38 near the opening edge is pushed into the through holes 21 and 22 by the tip of the first squeegee 45. To flow.
As a result, the glass frit 38 is filled in the through holes 21 and 22 (see FIG. 9B).

  After the end of the first scanning step (S35A), a second scanning step (S35B) for removing the excess glass frit 38 remaining on the first surface 40a of the base substrate wafer 40 is performed. Specifically, as shown in FIG. 9C, the scanning conditions of the first squeegee 45 are the same as described above in a state where the tip of the second squeegee 46 is in contact with the first surface 40 a of the base substrate wafer 40. The first squeegee 45 is scanned in the direction opposite to the scanning direction (for example, from the other end side in the radial direction of the base substrate wafer 40 to one end side) (see the arrow in FIG. 9C). As a result, as shown in FIG. 9D, the glass frit 38 that exists outside the through holes 21 and 22 (on the first surface 40 a of the base substrate wafer 40) can be removed.

FIG. 10 is a cross-sectional view of the base substrate wafer, and is a process diagram for explaining the temporary drying process and subsequent steps.
Next, as shown in FIG. 10A, the glass frit 38 embedded in the filling step (S35) is temporarily dried (S36: temporary drying step). Specifically, the base substrate wafer 40 filled with the glass frit 38 is transferred into a drying furnace. Then, the inside of the drying furnace is maintained at, for example, about 80 ° C. under an atmospheric pressure atmosphere, and the base substrate wafer 40 is dried for about 30 minutes.
Here, the boiling point of the organic solvent blended in the glass frit 38 is lower than 85 ° C. Therefore, in the temporary drying step (S36), the organic solvent blended in the glass frit 38 is evaporated and removed. On the other hand, the melting point of the glass particles contained in the glass frit 38 is generally about 500 ° C. to 600 ° C., which is much higher than 85 ° C. which is the temperature of the temporary drying step (S36). Therefore, the glass frit 38 is not melted in the temporary drying step (S36). Moreover, the boiling point of the binder (ethyl cellulose) blended in the glass frit 38 is about 350 ° C., which is much higher than the temperature in the temporary drying step (S36). Therefore, the binder does not evaporate in the temporary drying step (S36).
As described above, since the glass particles of the glass frit 38 are not melted at this point, there is a gap between the glass particles. Therefore, the gas generated by the evaporation of the organic solvent flows through the gaps between the glass particles and is released out of the glass frit 38 (see the arrow in FIG. 10A). Therefore, since the organic solvent can be effectively removed before the firing step (S38), gas generated by evaporation of the organic solvent during the firing step (S38) can be suppressed.

  Next, as shown in FIG. 10B, a binder removal process for removing the binder contained in the glass frit 38 is performed (S37). Specifically, the base substrate wafer 40 that has finished the temporary drying step (S36) is moved into a chamber of a heating furnace, and the inside of the heating furnace is held at, for example, about 420 ° C. in an air atmosphere. Heat for about 1 hour. Thus, in the binder removal step (S37), by setting the temperature in the heating furnace higher than the boiling point of the binder and lower than the melting point of the glass particles, the binder can be evaporated without melting the glass particles. it can. As a result, the gas generated by the evaporation of the binder flows through the gaps between the glass particles and is efficiently released out of the glass frit 38 (see the arrow in FIG. 10B). Since the binder can be effectively removed before the firing step (S38), the gas generated by the evaporation of the binder during the firing step (S38) can be suppressed.

  Next, a firing step (S38) is performed in which the glass frit 38 filled in the through holes 21 and 22 is fired and cured. For example, after the base substrate wafer 40 is transported into the chamber of the firing furnace, it is held in an atmosphere at about 610 ° C. for about 30 minutes to complete the firing of the glass frit. After the firing is completed, the base substrate wafer 40 is left to cool in a normal temperature atmosphere. Thereby, the glass frit 38 is solidified and the first glass body 32a described above can be formed.

(Film formation process)
By the way, since the volume of the glass frit 38 after the firing step (S38) decreases, there is a problem that a recess 208 (corresponding to the recess 32c in FIG. 10C) is formed on the glass frit 206 as shown in FIG. is there.

FIG. 11A is a cross-sectional view of the base substrate wafer and is a process diagram for explaining a film forming process.
Therefore, as shown in FIG. 11A, on the first surface 40a of the base substrate wafer 40 after firing, as with the base substrate wafer 40, a film forming material (for example, soda lime glass) A film forming process of covering with a filler 39 is performed (S39). Specifically, the film forming material 39 is formed so as to cover the entire first surface 40a of the base substrate wafer 40 by using a film forming method such as sputtering (high frequency sputtering) or chemical vapor deposition (CVD). Is deposited. Thereby, the film forming material 39 is formed so as to fill the recess 32 c generated in the glass frit 38 (first glass body 32 a) and cover the tip portion of the core part 31.

FIGS. 11B and 11C are cross-sectional views of the base substrate wafer, and are process diagrams for explaining the polishing process.
Next, as shown in FIG. 11B, after the film forming material 39 is formed, the first surface 40 a side of the base substrate wafer 40 is polished to the broken line part P <b> 1 to expose the tip of the core part 31. A polishing step is performed (S40). Thereby, the excessive film forming material 39 can be removed, and the flat first surface 40a of the base substrate wafer 40 can be obtained. Then, through the polishing step (S40), the recess 32c of the glass frit 38 (first glass body 32a) is filled, and the second glass body 32b flush with the first surface 40a of the base substrate wafer 40 is formed. Is done.
At the same time, the second surface 40b side of the base substrate wafer 40 is polished to the broken line portion P2, and the base portion 36 of the metal pins 37 is removed. Thereby, the base part 36 which played the role which positioned the cylinder 32 and the core material part 31 can be removed, and only the core material part 31 can be left inside the cylinder 32. FIG. As a result, a plurality of pairs of through electrodes 8 and 9 in which the cylindrical body 32 and the core member 31 are integrally fixed can be obtained.

  Next, a conductive material is patterned on the second surface 40b of the base substrate wafer 40, and a lead electrode forming step is performed (S41). In this way, the base substrate wafer manufacturing step (S30) is completed.

(Assembly process)
Next, the piezoelectric vibrating reeds 5 created in the piezoelectric vibrating reed creating step (S10) are respectively formed on the routing electrodes 27 and 28 of the base substrate wafer 40 created in the base substrate wafer creating step (S30). It mounts via bumps B, such as gold (S50). Then, an overlaying step is performed in which the base substrate wafer 40 and the lid substrate wafer 50 created in the above-described wafer 40, 50 creation step are overlaid (S60). Specifically, both wafers 40 and 50 are aligned at the correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 5 is housed in a cavity C surrounded by the recess 3 a formed in the lid substrate wafer 50 and the base substrate wafer 40.

  After the superposition step (S60), the two superposed wafers 40 and 50 are put into an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere with the outer peripheral portion of the wafer clamped by a holding mechanism (not shown). Is applied to perform anodic bonding (S70). Specifically, a predetermined voltage is applied between the bonding material 23 and the lid substrate wafer 50. As a result, an electrochemical reaction occurs at the interface between the bonding material 23 and the lid substrate wafer 50, and the two are firmly bonded and anodically bonded. Thereby, the piezoelectric vibrating reed 5 can be sealed in the cavity C, and the wafer bonded body 60 in which the base substrate wafer 40 and the lid substrate wafer 50 are bonded can be obtained. Then, the two wafers 40 and 50 are anodically bonded as in the present embodiment, so that compared with the case where the two wafers 40 and 50 are bonded with an adhesive or the like, a shift due to deterioration with time, impact, etc. Thus, both wafers 40 and 50 can be bonded more firmly.

  Thereafter, a pair of external electrodes 6 and 7 electrically connected to the pair of through electrodes 8 and 9 are formed (S80), and the frequency of the piezoelectric vibrator 1 is finely adjusted (S90). Then, an individualization step (S100) is performed in which the bonded wafer bonded body 60 is cut along the cutting line M.

In the electrical characteristic inspection step (S110), the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of the resonance frequency and resonance resistance value), etc. of the piezoelectric vibrator 1 are measured and checked. In addition, the insulation resistance characteristics are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like.
Thus, the piezoelectric vibrator 1 is completed.

Thus, in this embodiment, soda-lime glass was formed on the first surface 40a of the base substrate wafer 40 by using the sputtering method in the film forming step (S39).
According to this method, a thin film (film forming material 39) is formed in close contact with the recess 32c formed in the glass frit 38 (first glass body 32a) after firing, thereby forming a flat base substrate wafer. The first surface 40a can be obtained. Therefore, it is possible to suppress the occurrence of step breakage in the external electrodes 6, 7 formed so as to cover the through electrodes 8, 9, and to ensure electrical continuity between the inside and the outside of the cavity C. Further, by filling the dent 32c of the glass frit 38, the first surface 40a side can be easily flattened when polishing the first surface 40a side in the polishing step (S40). Improvements can be made.
In particular, by forming the film forming material 39 by a film forming method such as sputtering, a dense film can be formed as compared with a conventional case where the glass frit 38 is filled and baked. Thereby, the adhesiveness between the through electrodes 8 and 9 and the external electrodes 6 and 7 can be improved, and the piezoelectric vibrator 1 having further excellent conductivity between the inside and the outside of the cavity C can be provided.

Further, in the above-described film forming step (S40), the base substrate wafer 40 and the film forming material 39 (second glass) are formed by forming the film forming material 39 made of the same material as that of the base substrate wafer 40. Since the adhesion to the body 32b) can be improved, the strength of the piezoelectric vibrator 1 (package 10) can be ensured.
Furthermore, by forming the film forming material 39 on the entire first surface 40a, at least the entire first surface 40a excluding the metal pin 37 is formed of the same material. As a result, in the polishing step (S40), when the first surface 40a is polished, the polishing rate in the portion where the through holes 21 and 22 are formed and the portion where the through holes 21 and 22 are not formed are equal. That is, the polishing rate is the same over the entire first surface 40a of the base substrate wafer 40, and a flat surface can be formed more easily. Therefore, the adhesion between the through electrodes 8 and 9 and the external electrodes 6 and 7 can be further improved.

  Further, since the external electrodes 6 and 7 generally made of Au / Ni / Cr have excellent adhesion to soda lime glass, the film forming material 39 (second glass body 32b) is made of, for example, soda lime glass. As a result, the adhesion between the through electrodes 8 and 9 and the external electrodes 6 and 7 can be further improved. As a result, stable continuity between the inside and the outside of the cavity C through the through electrodes 8 and 9 can be secured.

  As described above, since the package 10 having excellent conductivity between the inside and outside of the cavity is provided, the piezoelectric vibrator 1 having excellent conductivity between the inside and outside of the cavity C can be provided, and the operation performance can be provided. The reliability can be improved and the performance can be improved.

(Oscillator)
Next, an embodiment of an oscillator according to the present invention will be described with reference to FIG.
As shown in FIG. 12, the oscillator 100 according to the present embodiment is configured such that the piezoelectric vibrator 1 is an oscillator electrically connected to the integrated circuit 101. The oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted. The above-described integrated circuit 101 for the oscillator is mounted on the substrate 103, and the piezoelectric vibrating piece 5 of the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101. The electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).

In the oscillator 100 configured as described above, when a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating piece 5 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 5 and input to the integrated circuit 101 as an electric signal. The input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal.
Thereby, the piezoelectric vibrator 1 functions as an oscillator.
Further, by selectively setting the configuration of the integrated circuit 101, for example, an RTC (real-time clock) module or the like according to a request, the operation date and time of the device and external device in addition to a single-function oscillator for a clock A function for controlling the time, providing a time, a calendar, and the like can be added.

  As described above, according to the oscillator 100 of the present embodiment, since the piezoelectric vibrator 1 described above is provided, the oscillator 100 having excellent characteristics and reliability can be provided. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.

(Electronics)
Next, an embodiment of an electronic apparatus according to the present invention will be described with reference to FIG. Note that the portable information device 110 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device. First, the portable information device 110 according to the present embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen. Further, when used as a communication device, it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.

(Portable information equipment)
Next, the configuration of the portable information device 110 of this embodiment will be described. As shown in FIG. 13, the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power. The power supply unit 111 is made of, for example, a lithium secondary battery. The power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel. The power unit 111 supplies power to each functional unit.

  The control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of audio data, measurement and display of the current time, and the like. The control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.

  The timer unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1. When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 5 vibrates, and this vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal. The output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.

The communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
The wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125. The audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120. The amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level. The voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.

In addition, the ring tone generator 123 generates a ring tone in response to a call from the base station. The switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received, so that the ringing tone generated in the ringing tone generating unit 123 is transmitted via the amplifying unit 120. To the audio input / output unit 121.
The call control memory unit 124 stores a program related to incoming / outgoing call control of communication. The telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.

  When the voltage applied to each functional unit such as the control unit 112 by the power supply unit 111 falls below a predetermined value, the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop. . The predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V. Upon receiving the voltage drop notification from the voltage detection unit 116, the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.

That is, the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115. This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
In addition, the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.

  As described above, according to the portable information device 110 of this embodiment, since the piezoelectric vibrator 1 described above is provided, the portable information device 110 having excellent characteristics and reliability can be provided. In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.

(Radio watch)
Next, an embodiment of a radio timepiece according to the present invention will be described with reference to FIG.
As shown in FIG. 14, the radio timepiece 130 of this embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 131, and receives a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
In Japan, there are transmitting stations (transmitting stations) that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves. Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide, and the above two transmitting stations cover all of Japan. doing.

Hereinafter, the functional configuration of the radio timepiece 130 will be described in detail.
The antenna 132 receives a long standard wave of 40 kHz or 60 kHz. The long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave. The received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1.
The piezoelectric vibrator 1 in this embodiment includes crystal vibrator portions 138 and 139 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency described above.

Further, the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 134. Subsequently, the time code is taken out via the waveform shaping circuit 135 and counted by the CPU 136. The CPU 136 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 137, and accurate time information is displayed.
Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator units 138 and 139 are preferably vibrators having the tuning fork type structure described above.

  In addition, although the above-mentioned description was shown in the example in Japan, the frequency of the long standard wave is different overseas. For example, in Germany, a standard radio wave of 77.5 KHz is used. Accordingly, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.

  As described above, according to the radio timepiece 130 of the present embodiment, since the piezoelectric vibrator 1 described above is provided, the radio timepiece 130 having excellent characteristics and reliability can be provided. In addition to this, it is possible to count time stably and with high accuracy over a long period of time.

The technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, a piezoelectric vibrator is manufactured by enclosing a piezoelectric vibrating piece inside the package while using the package manufacturing method according to the present invention. It is also possible to manufacture devices other than the piezoelectric vibrator by enclosing the parts.
In the above-described embodiment, the package manufacturing method of the present invention has been described by taking a piezoelectric vibrator using a tuning-fork type piezoelectric vibrating piece as an example. The present invention may be applied to a piezoelectric vibrator or the like using (thickness-shear vibrating piece).
In the above-described embodiment, the configuration in which the film forming material 39 is formed on the entire first surface 40a of the base substrate wafer 40 in the film forming step (S40) has been described. However, the glass frit 38 is interposed via a metal mask or the like. Alternatively, the film forming material 39 may be formed so as to fill only the recess 32c portion.

  Further, in the above-described embodiment, the through-electrodes 7 and 8 are formed by arranging the metal pins 37 erected from the base portion 36 in the through holes 21 and 22 and then polishing and removing the base portion 36. However, the present invention is not limited to this. For example, the through-holes 21 and 22 may be formed as bottomed recesses, and cylindrical metal pins may be disposed in the recesses to form the through-electrodes. However, the present embodiment is advantageous in that the metal pin can be disposed in the through hole without being tilted.

  Furthermore, in the above-described embodiment, the case where the film formation step (S39) is performed using the sputtering method or the chemical vapor deposition method (CVD) has been described. However, the thin film is adhered to the substrate and the glass frit. As long as the film can be formed flat, other film forming methods can be used.

DESCRIPTION OF SYMBOLS 2 ... Base board | substrate (1st board | substrate) 5 ... Piezoelectric vibrating piece (electronic component) 8, 9 ... Through-electrode 21, 22 ... Through-hole (recessed part) 31 ... Core material part (metal pin) 32a ... 1st glass body (glass) Frit) 32b ... second glass body (filling portion) 32c ... dent 36 ... base portion 37 ... metal pin 38 ... glass frit 39 ... film forming material (filler) 40a ... first surface 40b ... second surface 100 ... oscillator 101 ... Oscillator integrated circuit 110 ... Portable information equipment (electronic equipment) 113 ... Timekeeping part of electronic equipment 130 ... Radio clock 131 ... Filter part of radio clock C ... Cavity

Claims (8)

A method of manufacturing a package in which an electronic component can be enclosed in a cavity formed between a plurality of substrates bonded together,
A through electrode forming step of forming a through electrode that penetrates the first substrate in the thickness direction among the plurality of substrates and electrically connects the inside of the cavity and the outside of the plurality of substrates;
The through electrode forming step includes:
Forming a recess in the first surface of the first substrate;
A metal pin placement step of inserting a metal pin into the recess,
A filling step of filling a glass frit between the recess and the metal pin;
A firing step of firing and curing the glass frit filled in the recess;
A film forming step of forming a filler so as to fill a dent of the glass frit generated at least on the first surface side of the first substrate after the baking step;
Polishing the first substrate to expose the metal pins on the first surface and the second surface;
In the film forming step, the filler is formed by sputtering or chemical vapor deposition.   The method for manufacturing a package according to claim 1, wherein in the film forming step, the same material as that of the first substrate is formed.   The method for manufacturing a package according to claim 2, wherein the first substrate is formed of soda-lime glass, and soda-lime glass is used as the filler. A package capable of enclosing electronic components in a cavity formed between a plurality of substrates bonded together,
Among the plurality of substrates, a through electrode is disposed in a through hole penetrating the first substrate in the thickness direction, and electrically connects the inside of the cavity and the outside of the plurality of substrates,
The through electrode is
A metal pin disposed in a through-hole penetrating the first substrate;
A glass frit filled between the through hole and the metal pin;
A filling portion that fills a dent generated after firing of the glass frit,
The package characterized in that the filling portion is formed by sputtering or chemical vapor deposition.   A piezoelectric vibrator comprising a piezoelectric vibrating piece hermetically sealed in the cavity of the package according to claim 4.   The oscillator according to claim 5, wherein the piezoelectric vibrator is electrically connected to an integrated circuit as an oscillator.   6. An electronic apparatus, wherein the piezoelectric vibrator according to claim 5 is electrically connected to a timing unit.   6. A radio timepiece, wherein the piezoelectric vibrator according to claim 5 is electrically connected to a filter portion.

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