JP2012186355A - Vapor growth device with lifting mechanism - Google Patents

Vapor growth device with lifting mechanism Download PDF

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JP2012186355A
JP2012186355A JP2011049090A JP2011049090A JP2012186355A JP 2012186355 A JP2012186355 A JP 2012186355A JP 2011049090 A JP2011049090 A JP 2011049090A JP 2011049090 A JP2011049090 A JP 2011049090A JP 2012186355 A JP2012186355 A JP 2012186355A
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gas
gas outflow
ball screw
belt
vapor phase
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JP5048853B2 (en
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Masaaki Kodama
正明 児玉
Hiromutsu Kojima
弘睦 小島
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Sharp Corp
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Sharp Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587Mechanical means for changing the gas flow
    • C23C16/45589Movable means, e.g. fans
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67288Monitoring of warpage, curvature, damage, defects or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a vapor growth device equipped with a stop mechanism which prevents heavy goods, i.e. a gas outflow part, from falling while maintaining the surface height of the gas outflow part accurately when the gas outflow part is lifted.SOLUTION: In the vapor growth device equipped with the fall mechanism of a gas outflow part 105 that stops rotation of a ball screw 22 lifting the gas outflow part 105, a plurality of ball screws 22 are connected with the gas outflow part 105 via a shaft 21, and a plurality of belt fracture detection sensors 28, 29, 30, 31 are installed on all timing belts 27 connecting respective ball screws 22 and a motor 26.

Description

本発明は、被処理基板上に薄膜を形成する昇降機構を有する気相成長装置に関するものである。   The present invention relates to a vapor phase growth apparatus having an elevating mechanism for forming a thin film on a substrate to be processed.

従来、化合物半導体材料を用いる発光ダイオード、半導体レーザ、宇宙用ソーラーパワーデバイス、及び高速デバイスの製造においては、トリメチルガリウム(TMG)又はトリメチルアルミニウム(TMA)等の有機金属ガスと、アンモニア(NH3)、ホスフィン(PH3)又はアルシン(AsH3)等の水素化合物ガスとを成膜に寄与する反応ガスとして成長室に導入して化合物半導体結晶を成長させるMOCVD法が用いられている。   Conventionally, in the manufacture of light-emitting diodes, semiconductor lasers, space solar power devices, and high-speed devices using compound semiconductor materials, organometallic gases such as trimethylgallium (TMG) or trimethylaluminum (TMA), ammonia (NH3), A MOCVD method is used in which a compound semiconductor crystal is grown by introducing a hydrogen compound gas such as phosphine (PH3) or arsine (AsH3) into a growth chamber as a reaction gas contributing to film formation.

MOCVD法は、上記の反応ガスをキャリアガスと共に成長室内に導入して加熱し、所定の基板上で気相反応させることにより、その基板上に化合物半導体結晶を成長させる方法である。MOCVD法を用いた化合物半導体結晶の製造においては、成長する化合物半導体結晶の品質を向上させながら、コストを抑えて、歩留まりと生産能力とをどのように最大限確保するかということが常に高く要求されている。   The MOCVD method is a method in which a compound semiconductor crystal is grown on a substrate by introducing the above-mentioned reaction gas together with a carrier gas into a growth chamber and heating it to cause a gas phase reaction on a predetermined substrate. In the production of compound semiconductor crystals using MOCVD, there is always a high demand for how to secure the maximum yield and production capacity while reducing costs while improving the quality of growing compound semiconductor crystals. Has been.

図10は、MOCVD法に用いられる従来のガス流出部型気相成長装置の一例の模式的な構成を示す。この気相成長装置においては、ガス供給源101から反応炉102の内部の成長室103に反応ガス及びキャリアガスを導入するためのガス配管104が接続されており、反応炉102における内部の成長室103の上部には該成長室103に反応ガス及びキャリアガスを導入するための複数のガス吐出孔を配設したガス流出部105がガス導入部として設置されている。   FIG. 10 shows a schematic configuration of an example of a conventional gas outflow portion type vapor phase growth apparatus used in the MOCVD method. In this vapor phase growth apparatus, a gas pipe 104 for introducing a reaction gas and a carrier gas from a gas supply source 101 to a growth chamber 103 inside the reaction furnace 102 is connected, and the internal growth chamber in the reaction furnace 102 is connected. A gas outflow portion 105 provided with a plurality of gas discharge holes for introducing a reaction gas and a carrier gas into the growth chamber 103 is provided as a gas introduction portion above the 103.

また、成長室103の下部には、基板106を載置するためのサセプタ107が、ガス流出部105と対向するように設置されている。サセプタ107は、基板106を加熱するためのヒータ108を備え、図示しないアクチュエータによって回転軸109を中心に回転自在となっている。   In addition, a susceptor 107 for placing the substrate 106 is installed below the growth chamber 103 so as to face the gas outflow portion 105. The susceptor 107 includes a heater 108 for heating the substrate 106, and is rotatable about a rotation shaft 109 by an actuator (not shown).

さらに、反応炉102の下部には、成長室103内のガスを外部に排気するためのガス排気部110が設置されている。このガス排気部110は、パージライン111を介して、排気されたガスを無害化するための排ガス処理装置112に接続されている。   Further, a gas exhaust unit 110 for exhausting the gas in the growth chamber 103 to the outside is installed at the lower part of the reaction furnace 102. The gas exhaust unit 110 is connected via a purge line 111 to an exhaust gas treatment device 112 for rendering the exhausted gas harmless.

上記構成のガス流出部型気相成長装置において、化合物半導体結晶を成長させる場合には、まず、サセプタ107に基板106を設置し、サセプタ107を回転させ、ヒータ108により基板106を所定の温度に加熱する。その後、ガス流出部105に配設されている複数のガス吐出孔から成長室103に反応ガス及びキャリアガス(不活性ガス)を導入し、一定時間保持する事で、基板上106上に化合物半導体の結晶成長を行う。そして、反応炉102上部のガス流出部105を上昇させて、成長した基板の交換や反応分解物の除去を実施した後、再度、反応炉102上部のガス流出部105を下降させて成長室103を気密にした上で、同様の作業を繰り返し行う。   When a compound semiconductor crystal is grown in the gas outflow portion type vapor phase growth apparatus having the above configuration, first, the substrate 106 is set on the susceptor 107, the susceptor 107 is rotated, and the substrate 106 is brought to a predetermined temperature by the heater 108. Heat. Thereafter, a reaction gas and a carrier gas (inert gas) are introduced into the growth chamber 103 from a plurality of gas discharge holes arranged in the gas outflow portion 105 and held for a certain period of time, whereby a compound semiconductor is formed on the substrate 106. Crystal growth is performed. Then, after raising the gas outflow part 105 at the upper part of the reaction furnace 102 to replace the grown substrate and removing the reaction decomposition products, the gas outflow part 105 at the upper part of the reaction furnace 102 is lowered again to grow the growth chamber 103. Repeat the same process with airtightness.

一方、反応炉102上部のガス流出部105は、図示しない昇降機構によって保持されている。ガス流出部105は、基板106の大径化に伴い、重量が1トン近くになり、近年、ガス流出部105を保持する昇降機構に加わる重量がかなり増加している。その為、結晶成長毎に実施されるガス流出部105の昇降動作時にガス流出部105が落下しない対策を十分に実施することが必要となっている。このような昇降機構の安全に対処するための方法が特許文献1〜2で提案されている。
特許文献1においては、気相成長装置ではないものの、X線管、天板、撮像装置等を昇降移動させるためのモータからボールネジへの動力伝達機構が破断した場合、装置等が落下しないように安全な機構を備えたX線診断装置の構造が記載されている。図11に示すように、そのベルト113が破断した時、異常を検知する異常検知手段としてのベルト破断検出用センサ114を備えている。異常検出手段としてのベルト破断検出用センサ114は、例えば、ベルト113の走行する位置に、光発光部と受光部からなる透過型光センサを設けてその出力により動力伝達機構部の異常を検出する。一方、ボールネジ部は、ネジ棒115が装置に固定され、ナット116が回転するボールネジ機構を有している。
特許文献2においては、図13に示すように、手摺ベルトを駆動する駆動ベルトが、踏み板と同期して循環移動するように駆動する乗客コンベアの手摺ベルト駆動装置の構造が記載されている。また、図14に示すように、アイドラー117を駆動チェーン118のたわみが解消する方向に付勢する付勢機構119は、アイドラー117を回転自在に支持する軸体120と、その軸体120 を矢印Z 方向に移動可能に支持するように構成された筐体121と、その筐体121とアイドラー117との間に介装され、アイドラー117を常に駆動チェーン118を押圧するように付勢可能に装着されたコイルばね122とで構成されている。駆動チェーン118 が摩耗等により、乗客の安全性が危ぶまれる程度に長さが長くなった状態では、リミットスイッチ123が作動し、その作動信号が制御盤に供給されて電動機をOFF操作させ、直ちに、踏み板及び手摺ベルトの移動を停止させることができる構造となっている。
On the other hand, the gas outflow part 105 at the top of the reaction furnace 102 is held by a lifting mechanism (not shown). As the diameter of the substrate 106 is increased, the gas outflow portion 105 has a weight of nearly 1 ton, and in recent years, the weight applied to the lifting mechanism that holds the gas outflow portion 105 has increased considerably. For this reason, it is necessary to take sufficient measures to prevent the gas outflow portion 105 from dropping when the gas outflow portion 105 is moved up and down every time the crystal is grown. Patent Documents 1 and 2 propose methods for dealing with the safety of such a lifting mechanism.
In Patent Document 1, although it is not a vapor phase growth apparatus, when the power transmission mechanism from the motor for moving the X-ray tube, the top plate, the imaging apparatus, etc. to the up and down movement to the ball screw is broken, the apparatus or the like is not dropped. The structure of an X-ray diagnostic apparatus with a safe mechanism is described. As shown in FIG. 11, a belt breakage detection sensor 114 is provided as an abnormality detection means for detecting an abnormality when the belt 113 is broken. For example, the belt breakage detection sensor 114 serving as the abnormality detection means is provided with a transmission type optical sensor including a light emitting unit and a light receiving unit at a position where the belt 113 travels, and detects an abnormality of the power transmission mechanism unit based on the output. . On the other hand, the ball screw portion has a ball screw mechanism in which the screw rod 115 is fixed to the apparatus and the nut 116 rotates.
In Patent Document 2, as shown in FIG. 13, a structure of a handrail belt driving device for a passenger conveyor is described in which a driving belt that drives a handrail belt is circulated and moved in synchronization with a footboard. Further, as shown in FIG. 14, a biasing mechanism 119 that biases the idler 117 in a direction in which the deflection of the drive chain 118 is eliminated, a shaft body 120 that rotatably supports the idler 117, and the shaft body 120 are indicated by arrows. A housing 121 configured to be supported so as to be movable in the Z direction, and interposed between the housing 121 and the idler 117 so that the idler 117 can be urged so as to always press the drive chain 118. The coil spring 122 is made up of. In a state where the length of the drive chain 118 is increased to such an extent that the safety of the passenger is jeopardized due to wear or the like, the limit switch 123 is activated, and the operation signal is supplied to the control panel to turn off the motor immediately. In addition, the movement of the footboard and the handrail belt can be stopped.

特開2002−11003号公報JP 2002-11003 A 特開2007−191284号公報JP 2007-191284 A

気相成長装置の課題として、結晶成長毎に実施されるガス流出部105の昇降時にガス流出部105が落下しないように安全面で対策を実施することが必要であった。
さらに、ガス流出部105自体の重量が1トン近く、かなりの重量物となっており、支持するボールねじを1本で保持する事が出来ず、2本以上の複数のボールねじで支持する必要があった。
また、2本以上の複数のボールねじは、内部の成長室103に反応ガス及びキャリアガスを導入するためのガス配管104がガス流出部105に接続されている関係上、常に一定のガス流出部105の表面高さを維持しながら、昇降機構を動作させなければ、ガスの流量や流速に悪影響を及ぼし、さらには結晶成長させる際の成膜不均一を発生させる可能性があった。
As a problem of the vapor phase growth apparatus, it has been necessary to implement a countermeasure in terms of safety so that the gas outflow portion 105 does not fall when the gas outflow portion 105 is moved up and down every time crystal growth is performed.
Furthermore, the gas outflow portion 105 itself has a weight of nearly 1 ton and is a heavy object, and it is not possible to hold the supporting ball screw with one, and it is necessary to support with two or more ball screws. was there.
In addition, two or more ball screws always have a constant gas outflow portion because the gas pipe 104 for introducing the reaction gas and the carrier gas into the internal growth chamber 103 is connected to the gas outflow portion 105. If the elevating mechanism is not operated while maintaining the surface height of 105, there is a possibility that the gas flow rate and flow velocity will be adversely affected, and that film formation may be non-uniform during crystal growth.

特許文献1の場合は、ベルト113の走行する位置に、光発光部と受光部からなる透過型光センサを設けてその出力により動力伝達機構部の異常を検出する。ボールネジ部は、ネジ棒115が装置に固定され、ナット116が回転するボールネジ機構である。この機構のネジ棒115は1本であり、昇降させるワーク(X線管、撮像装置、天板等が取り付けられている)には、重量物である構造体を連結する事は出来ない。また、図12に示すように、透過型光センサ114では、ベルトが断線して、遮光する部分が完全にセンサ前面から無くならないと感知する事はなく、センサの反応までに時間的な遅れが発生する。特に、透過型光センサ間の2本のベルトの内、1本のみが断線した場合でも、残りの1本で遮光された状態が維持している場合、ベルト断線の検知が困難である。その為、気相成長装置のような大型の装置で求められる落下するまでの短時間での落下防止を十分に確保する事が出来ない。   In the case of Patent Document 1, a transmission type optical sensor including a light emitting unit and a light receiving unit is provided at a position where the belt 113 travels, and an abnormality of the power transmission mechanism unit is detected based on the output. The ball screw portion is a ball screw mechanism in which the screw rod 115 is fixed to the apparatus and the nut 116 rotates. The mechanism has a single screw rod 115, and a heavy structure cannot be connected to a work to be lifted (an X-ray tube, an imaging device, a top plate, etc. are attached). In addition, as shown in FIG. 12, the transmissive optical sensor 114 does not sense that the belt is broken and the light shielding part is not completely removed from the front of the sensor, and there is a time delay until the sensor reacts. appear. In particular, even when only one of the two belts between the transmission type optical sensors is disconnected, it is difficult to detect the disconnection of the belt if the remaining one is shielded from light. Therefore, it is not possible to sufficiently secure the fall prevention in a short time until the fall required by a large apparatus such as a vapor phase growth apparatus.

特許文献2の場合は、付勢機構119により付勢されて移動するアイドラー117の位置を検出可能な位置検出器124を備えており、特許文献1に比べて、短時間で断線防止を確認出来る。また、駆動チェーン118が摩耗等により、乗客の安全性が危ぶまれる程度に長さが長くなった状態で、リミットスイッチ123が作動し、その作動信号が制御盤に供給されて電動機をOFF操作させ、直ちに、踏み板及び手摺ベルトの移動を停止させることができ、駆動チェーン118が摩耗により全体の長さが長くなって、運転に支障が生ずる前に停止させることで、駆動ベルトが踏み板との間の同期がはずれ等により利用客が危険な状態になるのを未然に防止できる働きがある。   In the case of Patent Document 2, a position detector 124 that can detect the position of the idler 117 that is moved by being urged by the urging mechanism 119 is provided. Compared with Patent Document 1, prevention of disconnection can be confirmed in a shorter time. . In addition, the limit switch 123 operates in a state where the length of the drive chain 118 is increased to such an extent that the safety of passengers is jeopardized due to wear or the like, and the operation signal is supplied to the control panel to turn off the motor. Immediately, the movement of the tread plate and the handrail belt can be stopped, and the drive chain 118 is stopped before the entire length becomes longer due to wear and the operation is disturbed. It is possible to prevent the customer from becoming in a dangerous state due to the loss of synchronization.

しかし、駆動チェーン118は、1つの電動機、駆動輪のみを有しており、ガス流出部のような重量物を一定の昇降精度を維持しながら確保するのは困難である。また、位置検出器124は1カ所に付勢されており、何らかの影響で位置検出器124が動作不具合時には、十分な安全性を確保出来ない。従って、気相成長装置のようなガス流出部の重量物を精度良く昇降させ、かつ駆動チェーンのたわみ、断線時での安全性を十分確保した上での管理が困難であった。
本発明は、上記従来の問題点に鑑みなされたものであって、その目的は、ガス流出部の昇降時に、精度良くガス流出部の表面高さを維持しつつ、重量物であるガス流出部の落下を防止する停止機構を備えた気相成長装置を提供する事である。
However, the drive chain 118 has only one electric motor and drive wheel, and it is difficult to secure a heavy object such as a gas outflow portion while maintaining a certain lifting accuracy. Further, the position detector 124 is biased to one location, and when the position detector 124 malfunctions due to some influence, sufficient safety cannot be ensured. Therefore, it is difficult to perform management with a heavy weight in the gas outflow part such as a vapor phase growth apparatus being raised and lowered with high accuracy and sufficiently ensuring safety when the drive chain is bent or disconnected.
The present invention has been made in view of the above-described conventional problems, and the object thereof is to maintain a high surface height of the gas outflow portion with high accuracy when the gas outflow portion is moved up and down, and which is a heavy gas outflow portion. It is to provide a vapor phase growth apparatus provided with a stop mechanism for preventing the falling of the material.

本発明の気相成長装置は、ガス流出部を昇降するボールねじの回転を強制的停止し、ガス流出部の落下機構を備えた気相成長装置であって、ガス流出部にシャフトを介して複数のボールねじを相互に連結した上、それぞれのボールねじとモータとを連結するタイミングベルトの全てに複数のベルト破断検知センサを設置したことを特徴とする。 A vapor phase growth apparatus according to the present invention is a vapor phase growth apparatus that forcibly stops rotation of a ball screw that moves up and down a gas outflow portion and includes a dropping mechanism for the gas outflow portion. A plurality of ball screws are connected to each other, and a plurality of belt breakage detection sensors are installed on all timing belts connecting the respective ball screws and the motor.

または、本発明の気相成長装置は、ガス流出部にシャフトを介して複数のボールねじを相互に連結した上、それぞれのボールねじとモータとを連結するタイミングベルトの一部にベルト破断検知センサを設置したことを特徴とする。   Alternatively, in the vapor phase growth apparatus of the present invention, a plurality of ball screws are connected to each other through a shaft to a gas outflow portion, and a belt breakage detection sensor is provided at a part of a timing belt that connects each ball screw and a motor. It is characterized by having installed.

気相成長装置のガス流出部に複数のシャフトを相互に連結した上、それぞれのシャフトとボールねじとモータを連結するタイミングベルトに複数のベルト破断検知センサを設置する事で、ガス流出部の昇降時に、精度良くガス流出部の表面高さを維持しつつ、重量物であるガス流出部の落下を防止する事が可能となる。 By connecting a plurality of shafts to the gas outflow part of the vapor phase growth apparatus and installing a plurality of belt breakage detection sensors on the timing belt connecting each shaft, ball screw, and motor, the gas outflow part is moved up and down. Sometimes, it is possible to prevent the gas outflow portion, which is a heavy object, from falling while maintaining the surface height of the gas outflow portion with high accuracy.

本発明に係る気相成長装置の全体構成を示す概略図である。It is the schematic which shows the whole structure of the vapor phase growth apparatus which concerns on this invention. 気相成長装置の成長室内構成を示す断面図である。It is sectional drawing which shows the growth chamber structure of a vapor phase growth apparatus. 気相成長装置のガス流出部及び昇降機構の斜視図である。It is a perspective view of the gas outflow part and raising / lowering mechanism of a vapor phase growth apparatus. 気相成長装置のガス流出部上部の昇降機構の斜視図である。It is a perspective view of the raising / lowering mechanism of the gas outflow part upper part of a vapor phase growth apparatus. 実施の形態1のタイミングベルト及びベルト破断検知センサの配置上面図である。FIG. 4 is an arrangement top view of the timing belt and the belt breakage detection sensor according to the first embodiment. 実施の形態1のタイミングベルト及びベルト破断検知センサ断線前の斜視図である。FIG. 3 is a perspective view of the timing belt and the belt breakage detection sensor according to Embodiment 1 before disconnection. 実施の形態1のタイミングベルト及びベルト破断検知センサ断線前の斜視図である。FIG. 3 is a perspective view of the timing belt and the belt breakage detection sensor according to Embodiment 1 before disconnection. 実施例2のベルト破断検知センサの配置斜視図である。FIG. 6 is an arrangement perspective view of a belt breakage detection sensor of Example 2. 実施の形態1及び実施の形態2のベルト破断検知センサの構造図である。3 is a structural diagram of a belt breakage detection sensor according to Embodiment 1 and Embodiment 2. FIG. 従来例の気相成長装置の説明図である。It is explanatory drawing of the vapor phase growth apparatus of a prior art example. 従来例の特許文献1の説明図である。It is explanatory drawing of the patent document 1 of a prior art example. 従来例の特許文献1の説明図である。It is explanatory drawing of the patent document 1 of a prior art example. 従来例の特許文献2の説明図である。It is explanatory drawing of the patent document 2 of a prior art example. 従来例の特許文献2の説明図である。It is explanatory drawing of the patent document 2 of a prior art example.

本発明の一実施形態について図1に基づいて説明すれば、以下の通りである。なお、本発明の図面において、同一の参照符号は、同一部分又は相当部分を表わすものとする。   An embodiment of the present invention will be described with reference to FIG. In the drawings of the present invention, the same reference numerals represent the same or corresponding parts.

図1に、本発明の気相成長装置として、MOCVD装置全体1の模式的な構成の一例を示す。図1に示すように、MOCVD装置全体1は、主に化合物半導体結晶を成長させる成長室2、成長室内の基板を加熱する基板加熱機構3、ガス流出部を昇降する昇降機構4、図示しないガス流出部周辺を冷却する冷却配管系、成長室の排気を行う高真空排気系、プロセスガス排気系から構成される。
本発明は、これらの主構成のうち、ガス流出部を昇降する昇降機構に関する。
FIG. 1 shows an example of a schematic configuration of an entire MOCVD apparatus 1 as a vapor phase growth apparatus of the present invention. As shown in FIG. 1, the entire MOCVD apparatus 1 mainly includes a growth chamber 2 for growing a compound semiconductor crystal, a substrate heating mechanism 3 for heating a substrate in the growth chamber, a lifting mechanism 4 for raising and lowering a gas outflow portion, and a gas (not shown). It consists of a cooling pipe system that cools the periphery of the outflow part, a high vacuum exhaust system that exhausts the growth chamber, and a process gas exhaust system.
The present invention relates to an elevating mechanism for elevating and lowering a gas outflow portion among these main components.

また、図2は、長室内構成を示す断面図である。成長室は、内部を大気側と隔離する反応炉5を備えており、反応炉5内部には、反応室隔壁6によって分離された反応外部空間7と反応室8が設けられている。反応外部空間7には、パージガス供給管9が接続されており、パージガス(N2ガス、H2ガス)が導入されている。反応室8には、被処理基板10を載置する基板保持部11(サセプタ)が備えられている。基板保持部11は、回転伝達部12の一端に備え付けられており、図示しない回転機構により回転可能となっている。また、基板保持部11の下側には、被処理基板10を加熱するための基板加熱ヒータ13が設けられている。   Moreover, FIG. 2 is sectional drawing which shows a long chamber structure. The growth chamber is provided with a reaction furnace 5 that isolates the interior from the atmosphere side. Inside the reaction furnace 5, a reaction external space 7 and a reaction chamber 8 separated by a reaction chamber partition wall 6 are provided. A purge gas supply pipe 9 is connected to the reaction external space 7, and purge gas (N2 gas, H2 gas) is introduced. The reaction chamber 8 is provided with a substrate holder 11 (susceptor) on which the substrate 10 to be processed is placed. The substrate holding unit 11 is provided at one end of the rotation transmitting unit 12 and can be rotated by a rotation mechanism (not shown). A substrate heater 13 for heating the substrate to be processed 10 is provided below the substrate holding unit 11.

反応炉5の上部には、ガス流出部14が取外し可能に配設されている。反応炉5とガス流出部14は、Oリング14aでシールされており、反応炉5の内部をガス排出口から排気して気密状態に維持できるようなっている。   A gas outflow portion 14 is detachably disposed at the upper portion of the reaction furnace 5. The reaction furnace 5 and the gas outflow portion 14 are sealed by an O-ring 14a, and the inside of the reaction furnace 5 can be exhausted from the gas discharge port and maintained in an airtight state.

被処理基板10に化合物半導体結晶を成膜するときは、第1ガス分配空間15に、例えば、III族の元素を含む第1ガスが、第1ガス導入口16aから導入され、冷媒空間17を貫通する複数の第1ガス供給管17bを通って冷却された後、第1ガス供給管17bのガス吐出孔H1に連通する中央プレート18のプレート孔18aから反応室8に導入される。   When a compound semiconductor crystal is formed on the substrate 10 to be processed, for example, a first gas containing a group III element is introduced into the first gas distribution space 15 from the first gas introduction port 16a. After being cooled through the plurality of first gas supply pipes 17b penetrating, the reaction gas is introduced into the reaction chamber 8 through the plate holes 18a of the central plate 18 communicating with the gas discharge holes H1 of the first gas supply pipe 17b.

また、第2ガス分配空間19には、例えば、V族の元素を含む第2ガスが、第2ガス導入口19aから導入され、冷媒空間17を貫通する複数の第2ガス供給管20bを通って冷却された後、第2ガス供給管20bのガス吐出孔H2に連通する中央プレート18から反応室8に導入される。   Further, for example, a second gas containing a group V element is introduced into the second gas distribution space 19 from the second gas introduction port 19 a and passes through the plurality of second gas supply pipes 20 b penetrating the refrigerant space 17. After being cooled, the gas is introduced into the reaction chamber 8 from the central plate 18 communicating with the gas discharge hole H2 of the second gas supply pipe 20b.

このように、ガス流出部14は、多数の第1ガス供給管、第2ガス供給管を有し、かつ被処理基板の大径化と共に面積が大型になっており、1トン近くの重量物となっている。成膜後には、ガス流出部14は、反応炉5からOリング14aで図示しない昇降機構に連結して開放され、結晶基板の交換及びメンテナンスが実施される。本実施例のガス流出部14は、シャワーヘッドといわれる実施例で説明したが、本構成に限定されるものではなく、
中央放射型、ライン放射型といわれるガス流出部を有しているものを含んでいる。
次に、本発明の特徴的である昇降機構の実施例を図3から図4を用いて、ベルト破断検知センサ及び別の実施例を図5から図7を用いて詳細に説明する。
図3に気相成長装置のガス流出部及び昇降機構の斜視図を示す。ガス流出部14は、グローブボックスを貫通した4本のシャフト21にて連結している。4本のシャフト21は互いに2本ずつ1本のボールねじ22と連結している。連結しているボールねじ22は、一定の速度で回転しながら、連結しているシャフト21を上昇、あるいは下降させる。その結果、シャフト21に連結したガス流出部14が上昇、あるいは下降を一定の速度で行う。重量物であるガス流出部14は、4本のシャフト21及び2本のボールねじ22にて構成される事で、高さばらつきを抑えて精度良く、大径化したガス流出部14の上部にブレーキ部23を構成し、ボールねじ22の上昇の限界を超えた場合に強制的に静止出来る。さらに、2本のボールねじ22は、それぞれ上部において橋渡し部24を介して連結しており、ガス流出部によるボールねじへの負荷を均一に分散する効果を有している。図3では、ボールねじ22と4本のシャフト21の連結部分25は下部に位置しており、ガス流出部14が下降した状態を表している。
図4は、気相成長装置のガス流出部上部の昇降機構の斜視図である。図4では、図3に比べて連結部分25が上部に位置しており、図に記載した矢印方向にボールねじ22の回転によって4本のシャフト21が上昇し、ガス流出部14が上昇した状態を表している。2本のボールねじ22は、それぞれ上部において橋渡し部24を介して連結により、ガス流出部14によるボールねじ22への負荷を均一に分散しながら上昇し、上限にて強制的に静止している状態になっている。これらの構造により、4本のシャフト21の落下への安全性が連結されていない場合に比べて改善されている。
As described above, the gas outflow portion 14 has a large number of first gas supply pipes and second gas supply pipes, and has a large area with an increase in the diameter of the substrate to be processed. It has become. After film formation, the gas outflow portion 14 is opened from the reaction furnace 5 by an O-ring 14a connected to an elevating mechanism (not shown), and the replacement and maintenance of the crystal substrate are performed. Although the gas outflow part 14 of a present Example was demonstrated in the Example called a shower head, it is not limited to this structure,
It includes those that have a gas outflow part called the center radiation type and line radiation type.
Next, an embodiment of the lifting mechanism which is a characteristic of the present invention will be described in detail with reference to FIGS. 3 to 4, and a belt breakage detection sensor and another embodiment will be described in detail with reference to FIGS.
FIG. 3 is a perspective view of the gas outflow portion and the lifting mechanism of the vapor phase growth apparatus. The gas outflow part 14 is connected by four shafts 21 penetrating the glove box. The four shafts 21 are connected to one ball screw 22 by two each. The connected ball screw 22 raises or lowers the connected shaft 21 while rotating at a constant speed. As a result, the gas outflow portion 14 connected to the shaft 21 moves up or down at a constant speed. The heavy gas outflow portion 14 is configured by four shafts 21 and two ball screws 22, so that the height variation is suppressed with high accuracy and the diameter of the gas outflow portion 14 is increased. The brake unit 23 is configured and can be forcibly stopped when the limit of the rise of the ball screw 22 is exceeded. Further, the two ball screws 22 are connected to each other via a bridging portion 24 at the upper portion, and have an effect of uniformly distributing the load applied to the ball screw by the gas outflow portion. In FIG. 3, the connection part 25 of the ball screw 22 and the four shafts 21 is located in the lower part, and represents the state where the gas outflow part 14 descend | falls.
FIG. 4 is a perspective view of the lifting mechanism at the upper part of the gas outflow part of the vapor phase growth apparatus. In FIG. 4, the connecting portion 25 is located at the upper part as compared with FIG. 3, and the four shafts 21 are raised by the rotation of the ball screw 22 in the direction of the arrow shown in the figure, and the gas outflow portion 14 is raised Represents. The two ball screws 22 are connected to each other via a bridge portion 24 at the upper portion, and rise while dispersing the load on the ball screw 22 by the gas outflow portion 14 uniformly, and are forcibly stopped at the upper limit. It is in a state. With these structures, the safety against dropping of the four shafts 21 is improved as compared with the case where they are not connected.

図5にシャフト21、ボールねじ22、モータ26のタイミングベルト27による駆動構造及びベルト破断検知センサ28、29、30、31の配置を上面図で示す。図5における2本のボールねじ22の回転駆動は、ボールねじ22に巻かれたタイミングベルト27によって、中継軸32を介して、それぞれ同じ1つのモータ26に連結されている。つまり、このモータ26からの駆動をタイミングベルト27が伝達し、各2本のボールねじ22の回転駆動へと変換する構造となっている。この時、いずれかのボールねじ22への過加重、あるいはタイミングベルト27の損傷の影響を受けて、タイミングベルト27が断線する事が想定される。そこで、モータ26と中継軸32を繋ぐ2本のタイミングベルト27にそれぞれ2カ所のベルト破断検知センサ28、31を配置し、中継軸32とボールねじ22を繋ぐ2本のタイミングベルト27の2カ所のベルト破断検知センサ29、30を配置し、各ベルト破断検知センサ28、29、30、31は、図5のようにモータ26を中心に左右ボールねじ22に対照な位置に配置されている。この構成を有する事で、いずれかのボールねじ22への過加重、あるいはタイミングベルト27の損傷の影響を受けて、タイミングベルト27が断線する場合に、いずれかのベルト破断検知センサ28、29、30、31がその状況を検知し、断線によるガス流出部14の落下を防止できる。また、複数のベルト位置のいずれにおいてもベルト破断検知センサ28、29、30、31を配置する事で、いずれもタイミングベルト27の破断時にも短時間に落下を防止出来る効果を有する。   FIG. 5 is a top view showing the drive structure of the shaft 21, the ball screw 22, and the motor 26 by the timing belt 27 and the arrangement of the belt breakage detection sensors 28, 29, 30, and 31. The two ball screws 22 in FIG. 5 are rotationally driven by a timing belt 27 wound around the ball screw 22 and connected to the same one motor 26 via a relay shaft 32. That is, the driving from the motor 26 is transmitted by the timing belt 27 and converted into rotational driving of the two ball screws 22. At this time, it is assumed that the timing belt 27 is disconnected under the influence of overloading any one of the ball screws 22 or damage to the timing belt 27. Therefore, two belt breakage detection sensors 28 and 31 are arranged on two timing belts 27 connecting the motor 26 and the relay shaft 32, respectively, and two timing belts 27 connecting the relay shaft 32 and the ball screw 22 are arranged at two locations. The belt breakage detection sensors 29 and 30 are arranged, and the belt breakage detection sensors 28, 29, 30, and 31 are arranged at positions opposite to the left and right ball screws 22 around the motor 26 as shown in FIG. With this configuration, when the timing belt 27 is disconnected due to overloading of any one of the ball screws 22 or damage to the timing belt 27, any one of the belt breakage detection sensors 28, 29, 30 and 31 can detect the situation and prevent the gas outflow portion 14 from dropping due to disconnection. Further, by arranging the belt breakage detection sensors 28, 29, 30, and 31 at any of the plurality of belt positions, any of them has an effect of preventing the fall in a short time even when the timing belt 27 is broken.

図6に一例として、ベルト破断検知センサ28の構造図を示す。ベルト破断検知センサ28は、主に発光部33と受光部34からなるフォトセンサとフラグ板35で構成される。さらに、図7において、ベルト破断検知センサの断線時の挙動について説明する。これらのベルト破断検知センサを使用し、図7のように、タイミングベルト27が断線していない状況では、タイミングベルト27によるテンションでフラグ板35が押され、発光部33と受光部34との間にフラグ板35が挿入した状態で受光部34には入光せず、ブレーキが常時通電となる。次に、図8のように、タイミングベルト27が断線した状況では、タイミングベルト27によるテンションが瞬時に失われ、フォトセンサにおけるフラグ板35の発光部33と受光部34との間の遮光が無くなり、受光部34に入光する。この状態ではブレーキは遮電されて、ガス流出部14の落下を防止する停止機構が瞬時に作動する。
〔実施の形態2〕
別の実施形態について図9に基づいて説明する。図9は、図5でベルト破断検知センサ28、29、30、31の配置構成のみが異なるため、異なる部分のみ説明する。
図9において、ベルト破断検知センサ30、31の配置状態を示す。本実施例では、モータ26と中継軸32を繋ぐ2本のタイミングベルト27のうち1カ所にベルト破断検知センサ31を配置し、中継軸32とボールねじ22を繋ぐ2本のタイミングベルト27のうち1カ所にベルト破断検知センサ30を配置している。
この構成により、ベルト破断検知センサの個数を削減でき、タイミングベルト27の破断時に、実施例1に対して検知時間は遅くなるが、より低コストで断線によるガス流出部14の落下防止を検知できる。また、ベルト破断検知センサ30、31は、タイミングベルト27の長さ方向に対して、垂直方向にフラグ板35が動作するように、グローボックス上に固定されている。
図9のように、タイミングベルト27のベルト27a、27bの方向位置が異なる場合、それぞれの方向位置に垂直な方向にフラグ板35が動作するように、ベルト破断検知センサ30、31の配置位置を変更している。
また、これらのベルトへの加重、たわみの一例の数値としては、ベルト27aでは36.5N、たわみ8.4mm程度、ベルト27bでは35.2N、たわみ3.3mm程度を最適な条件で設定されている。
FIG. 6 shows a structural diagram of the belt breakage detection sensor 28 as an example. The belt breakage detection sensor 28 is mainly composed of a photo sensor including a light emitting unit 33 and a light receiving unit 34 and a flag plate 35. Furthermore, in FIG. 7, the behavior when the belt breakage detection sensor is disconnected will be described. When these belt breakage detection sensors are used and the timing belt 27 is not disconnected as shown in FIG. 7, the flag plate 35 is pushed by the tension of the timing belt 27, so that the gap between the light emitting unit 33 and the light receiving unit 34 is In the state where the flag plate 35 is inserted, the light receiving portion 34 is not incident and the brake is always energized. Next, as shown in FIG. 8, in the situation where the timing belt 27 is disconnected, the tension due to the timing belt 27 is instantaneously lost, and the light shielding between the light emitting portion 33 and the light receiving portion 34 of the flag plate 35 in the photosensor is eliminated. Then, the light enters the light receiving unit 34. In this state, the brake is interrupted, and a stop mechanism for preventing the gas outflow portion 14 from falling is activated instantly.
[Embodiment 2]
Another embodiment will be described with reference to FIG. FIG. 9 is different from FIG. 5 only in the arrangement configuration of the belt breakage detection sensors 28, 29, 30, and 31, and therefore only different portions will be described.
9, the arrangement | positioning state of the belt breakage detection sensors 30 and 31 is shown. In this embodiment, a belt breakage detection sensor 31 is arranged at one of two timing belts 27 that connect the motor 26 and the relay shaft 32, and among the two timing belts 27 that connect the relay shaft 32 and the ball screw 22. The belt breakage detection sensor 30 is arranged at one place.
With this configuration, the number of belt breakage detection sensors can be reduced, and when the timing belt 27 is broken, the detection time is delayed compared to the first embodiment, but it is possible to detect the fall prevention of the gas outflow portion 14 due to disconnection at a lower cost. . The belt breakage detection sensors 30 and 31 are fixed on the glow box so that the flag plate 35 operates in a direction perpendicular to the length direction of the timing belt 27.
As shown in FIG. 9, when the direction positions of the belts 27a and 27b of the timing belt 27 are different, the arrangement positions of the belt breakage detection sensors 30 and 31 are set so that the flag plate 35 operates in a direction perpendicular to the respective direction positions. It has changed.
Further, as an example of numerical values of the load and the deflection on these belts, 36.5N and a deflection of about 8.4 mm are set for the belt 27a, and 35.2N and a deflection of about 3.3mm are set for the belt 27b under optimum conditions. Yes.

今回開示された実施例はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内でのすべての変更が含まれることが意図される。   It should be understood that the embodiments disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

本発明は、昇降機構を有する気相成長装置に利用できる。   The present invention can be used in a vapor phase growth apparatus having a lifting mechanism.

1 MOCVD装置全体
2 成長室
3 基板加熱機構
4 昇降機構
5 反応炉
6 反応室隔壁
7 反応外部空間
8 反応室
9 パージガス供給管
10 被処理基板
11 基板保持部
12 回転伝達部
13 基板加熱ヒータ
14 ガス流出部
14a Oリング
15 第1ガス分配空間
16 第1ガス導入口
17 冷媒空間
17b 第1ガス供給管
18 中央プレート
18a プレート孔
19 第2ガス分配空間
19a 第2ガス導入口
20b 第2ガス供給管
21 シャフト
22 ボールねじ
23 ブレーキ部
24 橋渡し部
25 連結部分
26 モータ
27 タイミングベルト
27a ベルト
27b ベルト
28 ベルト破断検知センサ
29 ベルト破断検知センサ
30 ベルト破断検知センサ
31 ベルト破断検知センサ
32 中継軸
33 発光部
34 受光部
35 フラグ板
101 ガス供給源
102 反応炉
103 成長室
104 ガス配管
105 ガス流出部
106 基板
107 サセプタ
108 ヒータ
109 回転軸
110 ガス排気部
111 パージライン
112 排ガス処理装置
113 ベルト
114 透過型光センサ
115 ネジ棒
116 ナット
117 アイドラー
118 駆動チェーン
119 付勢機構
120 軸体
121 筐体
122 コイルばね
123 リミットスイッチ
124 位置検出器
DESCRIPTION OF SYMBOLS 1 MOCVD apparatus 2 Growth chamber 3 Substrate heating mechanism 4 Elevating mechanism 5 Reaction furnace 6 Reaction chamber partition 7 Reaction external space 8 Reaction chamber 9 Purge gas supply pipe 10 Substrate 11 Substrate holding part 12 Rotation transmission part 13 Substrate heater 14 Gas Outflow portion 14a O-ring 15 First gas distribution space 16 First gas introduction port 17 Refrigerant space 17b First gas supply pipe 18 Central plate 18a Plate hole 19 Second gas distribution space 19a Second gas introduction port 20b Second gas supply pipe 21 shaft 22 ball screw 23 brake portion 24 bridging portion 25 connecting portion 26 motor 27 timing belt 27a belt 27b belt 28 belt breakage detection sensor 29 belt breakage detection sensor 30 belt breakage detection sensor 31 belt breakage detection sensor 32 relay shaft 33 light emitting portion 34 Light receiver 35 Flag plate 101 Gas supply source 10 Reaction furnace 103 Growth chamber 104 Gas piping 105 Gas outflow portion 106 Substrate 107 Susceptor 108 Heater 109 Rotating shaft 110 Gas exhaust portion 111 Purge line 112 Exhaust gas treatment device 113 Belt 114 Transmission type optical sensor 115 Screw rod 116 Nut 117 Idler 118 Drive chain 119 Energizing mechanism 120 Shaft body 121 Housing 122 Coil spring 123 Limit switch 124 Position detector

Claims (6)

ガス流出部と、複数のボールねじ部と、前記ボールねじ部に連結したガス流出部を昇降するシャフト部と、前記ボールねじ部とモータ部の間にタイミングベルトによる保持機構と、前記タイミングベルトの近傍にセンサ部とを備えた気相成長装置。
A gas outflow portion, a plurality of ball screw portions, a shaft portion that moves up and down the gas outflow portion connected to the ball screw portion, a holding mechanism using a timing belt between the ball screw portion and the motor portion, A vapor phase growth apparatus provided with a sensor unit in the vicinity.
前記ボールねじ部とモータ部の間に中継軸を有し、前記ボールねじ部と前記中継軸及び前記中継軸と前記モータ部間の全てのタイミングベルト近傍にセンサ部を備えた請求項1記載の気相成長装置。
The relay shaft is provided between the ball screw portion and the motor portion, and sensor portions are provided in the vicinity of all timing belts between the ball screw portion, the relay shaft, and the relay shaft and the motor portion. Vapor growth equipment.
前記ボールねじ部とモータ部の間に中継軸を有し、前記ボールねじ部と前記中継軸及び前記中継軸と前記モータ部間のいずれか一方のタイミングベルト近傍にセンサ部を備えた請求項1記載の気相成長装置。
2. A relay shaft is provided between the ball screw portion and the motor portion, and a sensor portion is provided in the vicinity of any one of the timing belt between the ball screw portion and the relay shaft and between the relay shaft and the motor portion. The vapor phase growth apparatus described.
前記ガス流出部は、複数のガス配管からなるシャワーヘッド部を構成する請求項1
から3に記載の気相成長装置。
2. The gas outflow part constitutes a shower head part composed of a plurality of gas pipes.
4. The vapor phase growth apparatus according to 3.
前記ボールねじ部に、ガス流出部の上昇を停止するブレーキ部を備えたことする求項1から4に記載の気相成長装置。
5. The vapor phase growth apparatus according to any one of claims 1 to 4, wherein the ball screw portion includes a brake portion that stops the gas outflow portion from rising.
前記ボールねじ部は、橋渡し部を介して互いに連結されている請求項1から5に記載の気相成長装置。

6. The vapor phase growth apparatus according to claim 1, wherein the ball screw portions are connected to each other via a bridging portion.

JP2011049090A 2011-03-07 2011-03-07 Vapor phase growth apparatus having lifting mechanism Expired - Fee Related JP5048853B2 (en)

Priority Applications (2)

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JP2011049090A JP5048853B2 (en) 2011-03-07 2011-03-07 Vapor phase growth apparatus having lifting mechanism
PCT/JP2012/053118 WO2012120970A1 (en) 2011-03-07 2012-02-10 Gas phase growth device with raising and lowering mechanism

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