JP2012186336A - Nitride semiconductor laser device manufacturing method - Google Patents
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 59
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 38
- 238000005253 cladding Methods 0.000 claims description 31
- 238000002161 passivation Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 152
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 25
- 238000001312 dry etching Methods 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Abstract
Description
本発明は、窒化物半導体レーザ装置の製造方法に関し、特に、凸状のリッジ部が形成されるｐ型クラッド層を窒化物半導体で構成する窒化物レーザダイオードの製造に適用して有効な技術に関する。 The present invention relates to a method for manufacturing a nitride semiconductor laser device, and more particularly to a technique effective when applied to the manufacture of a nitride laser diode in which a p-type cladding layer in which a convex ridge portion is formed is formed of a nitride semiconductor. .
青色領域〜青紫色領域の波長帯で動作する窒化物レーザダイオードは、ＧａＡｓ系レーザダイオードに比べて波長が短いことから、直接描画装置の露光用光源などに使用されている。 Nitride laser diodes operating in the wavelength band of the blue region to the blue-violet region have a shorter wavelength than GaAs laser diodes, and are therefore used directly as exposure light sources for drawing devices.
従来、窒化物レーザダイオードでは、基板材料としてＧａＮ（窒化ガリウム）などが用いられ、素子構造としてリッジ導波路型が多用されている（例えば特許文献１）。リッジ導波路型の場合は、例えば有機金属気相成長法を用いてｎ型ＧａＮ基板上にｎ型クラッド層、多重量子井戸構造を有する活性層、ｐ型クラッド層、ｐ型コンタクト層などの半導体層を成長させた後、ｐ型コンタクト層の上部に堆積した酸化シリコン膜をストライプ状に加工し、これをマスクとしてｐ型クラッド層をドライエッチングすることにより、凸状のリッジ部を形成する。ここで、リッジ部が形成されるｐ型クラッド層には、例えばＭｇ（マグネシウム）ドープＡｌＧａＮ（窒化アルミニウムガリウム）のような窒化物半導体材料が用いられる。 Conventionally, in a nitride laser diode, GaN (gallium nitride) or the like is used as a substrate material, and a ridge waveguide type is frequently used as an element structure (for example, Patent Document 1). In the case of the ridge waveguide type, a semiconductor such as an n-type cladding layer, an active layer having a multiple quantum well structure, a p-type cladding layer, or a p-type contact layer on an n-type GaN substrate using, for example, metal organic chemical vapor deposition. After the layer is grown, the silicon oxide film deposited on the p-type contact layer is processed into a stripe shape, and the p-type clad layer is dry-etched using the silicon oxide film as a mask to form a convex ridge portion. Here, a nitride semiconductor material such as Mg (magnesium) doped AlGaN (aluminum gallium nitride) is used for the p-type cladding layer in which the ridge portion is formed.
上記した窒化物レーザダイオードは、デバイス性能の向上および信頼性向上の観点から、動作電圧の低減、しきい値電流の低減といった特性の改善が求められているが、窒化物レーザダイオードの動作電圧の低減を妨げている原因の一つに、リッジ部とそれに接続されるｐ側電極の間のコンタクト抵抗が挙げられる。 The nitride laser diode described above is required to improve characteristics such as a reduction in operating voltage and a reduction in threshold current from the viewpoint of improving device performance and reliability. One of the causes that prevent the reduction is the contact resistance between the ridge portion and the p-side electrode connected to the ridge portion.
従来、リッジ部とｐ側電極とを接続するには、まず、リッジ部が形成された基板上にパッシベーション膜を堆積し、次に、フォトリソグラフィ技術を用いてリッジ部の上面のパッシベーション膜を選択的に除去してリッジ部の上面を露出させた後、リッジ部の上部にｐ側電極を形成していた。この場合、ｐ側電極は、リッジ部の上面でのみリッジ部と接触するので、両者の接触面積が小さく、これがコンタクト抵抗の増加を招く原因となっていた。 Conventionally, in order to connect the ridge portion and the p-side electrode, first, a passivation film is deposited on the substrate on which the ridge portion is formed, and then a passivation film on the upper surface of the ridge portion is selected using photolithography technology. The p-side electrode was formed on the top of the ridge after removing the upper surface of the ridge to remove the upper surface. In this case, since the p-side electrode is in contact with the ridge only on the upper surface of the ridge, the contact area between both is small, which causes an increase in contact resistance.
その対策として、リッジ部の上面だけでなく、その側面をｐ側電極と接触させることによって、両者の接触面積を増やすことが考えられる。 As a countermeasure, it can be considered that not only the upper surface of the ridge portion but also the side surface thereof is brought into contact with the p-side electrode to increase the contact area between them.
リッジ部の上面と側面をｐ側電極と接触させるには、例えば従来方法を用いてリッジ部の上面のパッシベーション膜を除去した後、リッジ部の両側のｐ型クラッド層の上部に、リッジ部の高さよりも薄い膜厚を有するフォトレジスト膜を形成する。このような膜厚を有するフォトレジスト膜を形成するには、まず、基板上にリッジ部の高さよりも厚い膜厚を有するフォトレジスト膜を塗布し、次に、露光光量を少なめにした状態でこのフォトレジスト膜を感光させた後、現像を行う。このようにすると、フォトレジスト膜は、その表面部分（感光された部分）のみが除去されて膜厚が薄くなるので、ｐ型クラッド層の上部に、リッジ部の高さよりも薄い膜厚のフォトレジスト膜（未感光部分のフォトレジスト膜）が残る。 In order to bring the upper surface and the side surface of the ridge portion into contact with the p-side electrode, for example, after removing the passivation film on the upper surface of the ridge portion using a conventional method, the ridge portion is formed on the p-type cladding layer on both sides of the ridge portion. A photoresist film having a film thickness thinner than the height is formed. In order to form a photoresist film having such a film thickness, first, a photoresist film having a film thickness thicker than the height of the ridge portion is applied on the substrate, and then the amount of exposure light is reduced. After the photoresist film is exposed, development is performed. In this way, since the photoresist film is thinned by removing only the surface portion (exposed portion), the photoresist film having a thickness smaller than the height of the ridge portion is formed on the p-type cladding layer. A resist film (photosensitive film of the unexposed portion) remains.
次に、この状態でパッシベーション膜をエッチングすると、リッジ部の側面のうち、フォトレジスト膜で覆われていない部分（例えばリッジ部の側面の上半部）のパッシベーション膜が除去され、リッジ部の側面の一部が露出する。次に、上記フォトレジスト膜を除去した後、リッジ部の上部にｐ側電極を形成すると、リッジ部の上面だけでなく、側面の一部（例えば側面の上半部）がｐ側電極と接触するので、リッジ部とｐ側電極の接触面積が増加し、コンタクト抵抗が低減する。 Next, when the passivation film is etched in this state, a portion of the side surface of the ridge portion that is not covered with the photoresist film (for example, the upper half of the side surface of the ridge portion) is removed, and the side surface of the ridge portion is removed. A part of is exposed. Next, after removing the photoresist film and forming a p-side electrode on the ridge portion, not only the upper surface of the ridge portion but also a part of the side surface (for example, the upper half of the side surface) is in contact with the p-side electrode. Therefore, the contact area between the ridge portion and the p-side electrode is increased, and the contact resistance is reduced.
しかしながら、本発明者の検討によれば、窒化物レーザダイオードの場合は、その特性上、リッジ部の高さが低いために、リッジ部の両側のｐ型クラッド層の上部に、リッジ部の高さよりも薄い膜厚を有するフォトレジスト膜を形成することが困難である。 However, according to the study of the present inventors, in the case of a nitride laser diode, the height of the ridge portion is low due to its characteristics, so that the height of the ridge portion is higher than the p-type cladding layer on both sides of the ridge portion. It is difficult to form a photoresist film having a thickness smaller than that.
例えば赤色領域の波長帯で動作するＧａＡｓ系レーザダイオードの場合、リッジ部の高さは１．５μｍ程度であるのに対し、窒化物レーザダイオードのリッジ部の高さは０．５μｍ程度である。これは、窒化物レーザダイオードの場合、ｐ型クラッド層を構成する窒化物半導体材料の抵抗が高いため、リッジ部の高さが大きくなると（すなわち、ｐ型クラッド層の膜厚が大きくなると）、発熱量が大きくなってしまうからである。 For example, in the case of a GaAs laser diode operating in the red wavelength band, the height of the ridge portion is about 1.5 μm, whereas the height of the ridge portion of the nitride laser diode is about 0.5 μm. This is because, in the case of a nitride laser diode, since the nitride semiconductor material constituting the p-type cladding layer has a high resistance, when the height of the ridge portion increases (that is, when the thickness of the p-type cladding layer increases) This is because the calorific value becomes large.
従って、フォトレジスト膜を露光する際の露光光量を調節することによって、フォトレジスト膜の膜厚を制御する上記の方法では、リッジ部の両側のｐ型クラッド層の上部に、リッジ部の高さよりも薄い（すなわち０．５μｍ以下の）膜厚を有するフォトレジスト膜を高い寸法精度で形成することは困難である。 Therefore, in the above method of controlling the film thickness of the photoresist film by adjusting the exposure light amount when exposing the photoresist film, the height of the ridge portion is higher than the p-type cladding layer on both sides of the ridge portion. However, it is difficult to form a photoresist film having a thin film thickness (that is, 0.5 μm or less) with high dimensional accuracy.
本発明の目的は、凸状のリッジ部を有する窒化物半導体レーザ装置において、リッジ部とそれに接続される電極とのコンタクト抵抗を低減することのできる技術を提供することにある。 An object of the present invention is to provide a technique capable of reducing the contact resistance between a ridge portion and an electrode connected thereto in a nitride semiconductor laser device having a convex ridge portion.
本発明の前記ならびにその他の目的と新規な特徴は、本明細書の記述および添付図面から明らかになるであろう。 The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば、次のとおりである。 Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.
本願発明の好ましい一態様である窒化物半導体レーザ装置の製造方法は、以下の工程を含んでいる。
（ａ）基板上に、少なくともｎ型クラッド層、活性層、窒化物半導体を主体として構成されるｐ型クラッド層およびｐ型コンタクト層を成長させる工程と、
（ｂ）前記ｐ型コンタクト層の上部に形成した第１絶縁膜をマスクにして、前記ｐ型コンタクト層および前記ｐ型クラッド層をドライエッチングすることにより、前記ｐ型クラッド層の一部に凸状のリッジ部を形成する工程と、
（ｃ）前記ｐ型コンタクト層の上部に前記第１絶縁膜を残した状態で、前記基板上に第２絶縁膜からなパッシベーション膜を形成する工程と、
（ｄ）前記（ｃ）工程の後、前記リッジ部の上方に開口を設けた第１フォトレジスト膜をマスクにして前記リッジ部の上方の前記パッシベーション膜およびその下部の前記第１絶縁膜をエッチングすることにより、前記パッシベーション膜およびその下部の前記第１絶縁膜に、その底部が前記第１絶縁膜の下部の前記リッジ部に達しない程度の深さを有する第１開口を形成する工程と、
（ｅ）前記第１フォトレジスト膜を除去した後、前記基板上の全面に第２フォトレジスト膜を塗布する工程と、
（ｆ）露光光が前記第２フォトレジスト膜の底面まで到達しないような露光条件下で、少なくとも前記リッジ部とその近傍を覆う領域の前記第２フォトレジスト膜を露光する工程と、
（ｇ）前記（ｆ）工程の後、前記第２フォトレジスト膜を現像することにより、前記リッジ部の上方の前記第２フォトレジスト膜を除去すると共に、前記リッジ部の両側の前記パッシベーション膜上に、その上面の高さが前記リッジ部の上面の高さよりも低くなるような膜厚を有する前記第２フォトレジスト膜を残す工程と、
（ｈ）前記（ｇ）工程の後、前記第２フォトレジスト膜をマスクにしたウェットエッチングにより、前記リッジ部の上方の前記第１絶縁膜およびその上部のパッシベーション膜と、前記第１絶縁膜の側面を覆う前記パッシベーション膜と、前記リッジ部の側面のうち、前記第２フォトレジスト膜の上面よりも上方の部分を覆う前記パッシベーション膜とを除去し、前記ｐ型コンタクト層の上面と側面の一部とを露出させる工程と、
（ｉ）前記第２フォトレジスト膜を除去した後、前記（ｈ）工程で露出させた前記ｐ型コンタクト層の前記上面と前記側面の一部とに接する電極を形成する工程。
A method for manufacturing a nitride semiconductor laser device, which is a preferred embodiment of the present invention, includes the following steps.
(A) growing a p-type cladding layer and a p-type contact layer mainly composed of at least an n-type cladding layer, an active layer, and a nitride semiconductor on a substrate;
(B) Using the first insulating film formed on the p-type contact layer as a mask, the p-type contact layer and the p-type clad layer are dry-etched, thereby projecting part of the p-type clad layer. Forming a ridge-shaped portion,
(C) forming a passivation film made of a second insulating film on the substrate with the first insulating film left on the p-type contact layer;
(D) After the step (c), the passivation film above the ridge portion and the first insulating film below the ridge portion are etched using the first photoresist film having an opening above the ridge portion as a mask. Forming a first opening in the passivation film and the first insulating film below the first opening having a depth that does not reach the ridge portion below the first insulating film;
(E) after removing the first photoresist film, applying a second photoresist film over the entire surface of the substrate;
(F) exposing the second photoresist film in a region covering at least the ridge portion and the vicinity thereof under exposure conditions such that exposure light does not reach the bottom surface of the second photoresist film;
(G) After the step (f), the second photoresist film is developed to remove the second photoresist film above the ridge portion, and on the passivation film on both sides of the ridge portion. And leaving the second photoresist film having a thickness such that the height of the upper surface is lower than the height of the upper surface of the ridge portion;
(H) After the step (g), by wet etching using the second photoresist film as a mask, the first insulating film above the ridge portion, the passivation film above the ridge portion, and the first insulating film The passivation film covering the side surface and the passivation film covering a portion of the side surface of the ridge portion above the upper surface of the second photoresist film are removed, and the p-type contact layer has a top surface and a side surface. Exposing the part,
(I) A step of forming an electrode in contact with the upper surface and a part of the side surface of the p-type contact layer exposed in the step (h) after removing the second photoresist film.
本願において開示される発明のうち、代表的なものによって得られる効果を簡単に説明すれば以下のとおりである。 Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.
リッジ部の高さが小さい場合でも、ｐ側電極をリッジ部の上面と側面とに電気的に接続させることが可能となるので、リッジ部とｐ側電極のコンタクト抵抗を低減することができ、窒化物レーザダイオードの動作電圧の低減を図ることが可能となる。 Even when the height of the ridge portion is small, the p-side electrode can be electrically connected to the upper surface and the side surface of the ridge portion, so that the contact resistance between the ridge portion and the p-side electrode can be reduced, The operating voltage of the nitride laser diode can be reduced.
以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、実施の形態を説明するための全図において、同一の部材には原則として同一の符号を付し、その繰り返しの説明は省略する。また、以下の実施の形態では、特に必要なときを除き、同一または同様な部分の説明を原則として繰り返さない。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted. Also, in the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.
以下、図面を参照しながら、凸状のリッジ部を有する窒化物レーザダイオードの製造方法を工程順に説明する。 Hereinafter, a method for manufacturing a nitride laser diode having a convex ridge portion will be described in the order of steps with reference to the drawings.
まず、図１に示すように、ｎ型ＧａＮ基板１０を用意し、その上面に例えばＳｉドープＧａＮからなるｎ型バッファ層１１、ＳｉドープＡｌＧａＮからなるｎ型クラッド層１２、ＳｉドープＧａＮからなるｎ型ガイド層１３、井戸層とバリア層とを交互に積層したアンドープＩｎＧａＮ（窒化インジウムガリウム）からなる活性層１４、ＭｇドープＡｌＧａＮからなる電子ブロック層１５を順次成長させ、続いて電子ブロック層１５の上部に、Ａｌ：Ｇａ：Ｎの組成比が電子ブロック層１５とは異なるＭｇドープＡｌＧａＮからなるｐ型クラッド層１６を成長させ、ｐ型クラッド層１６の上部にＭｇドープＧａＮからなるｐ型コンタクト層１７を成長させる。上記したｎ型ＧａＮ基板１０上の各半導体層は、一般的な有機金属気相成長法を用いて成長させる。また、ｐ型クラッド層１６の膜厚は、例えば５００ｎｍ程度とする。 First, as shown in FIG. 1, an n-type GaN substrate 10 is prepared, and an n-type buffer layer 11 made of, for example, Si-doped GaN, an n-type cladding layer 12 made of Si-doped AlGaN, and an n-type made of Si-doped GaN are formed on the upper surface thereof. An active layer 14 made of undoped InGaN (indium gallium nitride) and an electron block layer 15 made of Mg-doped AlGaN are sequentially grown in order, followed by the mold guide layer 13, well layers and barrier layers. A p-type cladding layer 16 made of Mg-doped AlGaN having a composition ratio of Al: Ga: N different from that of the electron block layer 15 is grown on the top, and a p-type contact layer made of Mg-doped GaN is formed on the p-type cladding layer 16. Grow 17 Each semiconductor layer on the n-type GaN substrate 10 is grown using a general metal organic vapor phase epitaxy. The film thickness of the p-type cladding layer 16 is, for example, about 500 nm.
次に、図２に示すように、例えばＣＶＤ法を用いてｐ型コンタクト層１７の上部に酸化シリコン膜１８を堆積した後、図３に示すように、酸化シリコン膜１８の上部に形成したフォトレジスト膜２６をマスクにしたドライエッチングで酸化シリコン膜１８をパターニングする。パターニングされた酸化シリコン膜１８は、図３の紙面に垂直な方向に延在するストライプ状のパターンを有している。 Next, as shown in FIG. 2, after the silicon oxide film 18 is deposited on the p-type contact layer 17 by using, for example, the CVD method, a photo formed on the silicon oxide film 18 as shown in FIG. The silicon oxide film 18 is patterned by dry etching using the resist film 26 as a mask. The patterned silicon oxide film 18 has a stripe pattern extending in a direction perpendicular to the paper surface of FIG.
上記酸化シリコン膜１８は、次の工程でｐ型コンタクト層１７およびｐ型クラッド層１６をエッチングするためのマスクとして使用され、かつパッシベーション膜としても機能する。本実施の形態では、上記酸化シリコン膜１８の膜厚を、パッシベーション膜として要求される膜厚（例えば４００ｎｍ程度）よりも厚くする（例えば８００ｎｍ）。 The silicon oxide film 18 is used as a mask for etching the p-type contact layer 17 and the p-type cladding layer 16 in the next step, and also functions as a passivation film. In the present embodiment, the silicon oxide film 18 is made thicker (for example, 800 nm) than the film thickness (for example, about 400 nm) required for the passivation film.
次に、フォトレジスト膜２６を除去した後、図４に示すように、パターニングされた酸化シリコン膜１８をマスクにしてｐ型コンタクト層１７およびｐ型クラッド層１６をドライエッチングする。ｐ型コンタクト層１７を構成するＭｇドープＧａＮおよびｐ型クラッド層１６を構成するＭｇドープＡｌＧａＮをドライエッチングするには、例えば塩素系のガスを使用する。このとき、ｐ型クラッド層１６のドライエッチングを途中で停止することにより、断面形状が凸状のリッジ部１６Ａを形成する。 Next, after removing the photoresist film 26, as shown in FIG. 4, the p-type contact layer 17 and the p-type cladding layer 16 are dry-etched using the patterned silicon oxide film 18 as a mask. In order to dry-etch the Mg-doped GaN constituting the p-type contact layer 17 and the Mg-doped AlGaN constituting the p-type cladding layer 16, for example, a chlorine-based gas is used. At this time, the dry etching of the p-type cladding layer 16 is stopped halfway, thereby forming the ridge portion 16A having a convex cross-sectional shape.
ｐ型クラッド層１６をドライエッチングする上記の工程では、ドライエッチングのマスクとなる酸化シリコン膜１８も僅かにエッチングされる。例えばドライエッチング前の酸化シリコン膜１８の膜厚を８００ｎｍとした場合、ドライエッチング後の膜厚は７５０ｎｍとなる。 In the above-described step of dry etching the p-type cladding layer 16, the silicon oxide film 18 serving as a dry etching mask is also slightly etched. For example, when the film thickness of the silicon oxide film 18 before dry etching is 800 nm, the film thickness after dry etching is 750 nm.
次に、図５に示すように、リッジ部１６Ａの上部に酸化シリコン膜１８を残した状態で、ｎ型ＧａＮ基板１０の上面に窒化シリコン膜１９を堆積する。これにより、リッジ部１６Ａの上部には、酸化シリコン膜１８と窒化シリコン膜１９の２層膜からなるパッシベーション膜が形成される。また、リッジ部１６Ａの両側のｐ型クラッド層１６の上部には、窒化シリコン膜１９からなるパッシベーション膜が形成される。 Next, as shown in FIG. 5, a silicon nitride film 19 is deposited on the upper surface of the n-type GaN substrate 10 with the silicon oxide film 18 left on the ridge portion 16A. Thus, a passivation film composed of a two-layer film of the silicon oxide film 18 and the silicon nitride film 19 is formed on the ridge portion 16A. A passivation film made of a silicon nitride film 19 is formed on the p-type cladding layer 16 on both sides of the ridge portion 16A.
ｎ型ＧａＮ基板１０の上面に上記窒化シリコン膜１９を堆積する際は、図５に示すように、縦方向（ｎ型ＧａＮ基板１０の上面に垂直な方向）の膜厚が横方向（ｎ型ＧａＮ基板１０の上面に水平な方向）の膜厚よりも大きくなるような条件で堆積し、リッジ部１６Ａの側面に堆積される窒化シリコン膜１９の膜厚を出来るだけ薄くすることが望ましい。ここでは、スパッタリング法を用い、縦方向の膜厚が１６０ｎｍ程度の窒化シリコン膜１９を堆積する。 When the silicon nitride film 19 is deposited on the upper surface of the n-type GaN substrate 10, as shown in FIG. 5, the film thickness in the vertical direction (direction perpendicular to the upper surface of the n-type GaN substrate 10) is lateral (n-type). It is desirable that the silicon nitride film 19 deposited on the side surface of the ridge portion 16A be made as thin as possible by depositing under conditions such that the film thickness is larger than the film thickness in the horizontal direction on the upper surface of the GaN substrate 10. Here, a silicon nitride film 19 having a vertical film thickness of about 160 nm is deposited by sputtering.
次に、図６に示すように、ｎ型ＧａＮ基板１０の上面にフォトレジスト膜２０を塗布した後、その一部を選択的に露光・現像することにより、リッジ部１６Ａの上方のフォトレジスト膜２０に開口２０Ａを形成する。 Next, as shown in FIG. 6, after a photoresist film 20 is applied to the upper surface of the n-type GaN substrate 10, a portion of the photoresist film 20 is selectively exposed and developed to thereby form a photoresist film above the ridge portion 16A. An opening 20 </ b> A is formed in 20.
次に、図７に示すように、上記フォトレジスト膜２０をマスクにして、開口２０Ａの下部の窒化シリコン膜１９、酸化シリコン膜１８を順次ドライエッチングすることにより、リッジ部１６Ａの上方に開口２１を形成する。 Next, as shown in FIG. 7, by using the photoresist film 20 as a mask, the silicon nitride film 19 and the silicon oxide film 18 below the opening 20A are sequentially dry etched, thereby opening the opening 21 above the ridge portion 16A. Form.
このとき、開口２１の底部にリッジ部１６Ａの上面が露出すると、リッジ部１６Ａの上面がドライエッチングされてダメージ（結晶欠陥）が発生するので、酸化シリコン膜１８のドライエッチングを途中で停止し、開口２１の底部にリッジ部１６Ａの上面が露出しないようにする。前述したように、酸化シリコン膜１８は、パッシベーション膜として要求される膜厚よりも厚い膜厚で形成されているので、リッジ部１６Ａの上面が露出する前に酸化シリコン膜１８のドライエッチングを停止することは容易に制御できる。 At this time, if the upper surface of the ridge portion 16A is exposed at the bottom of the opening 21, the upper surface of the ridge portion 16A is dry-etched to cause damage (crystal defects). Therefore, the dry etching of the silicon oxide film 18 is stopped halfway. The upper surface of the ridge portion 16A is not exposed at the bottom of the opening 21. As described above, since the silicon oxide film 18 is formed to be thicker than the thickness required for the passivation film, the dry etching of the silicon oxide film 18 is stopped before the upper surface of the ridge portion 16A is exposed. Doing can be easily controlled.
次に、フォトレジスト膜２０を除去した後、図８に示すように、ｎ型ＧａＮ基板１０の上面に、リッジ部１６Ａの上部の窒化シリコン膜１９を覆う程度の膜厚を有する第２のフォトレジスト膜２２を塗布する。続いて、少なくともリッジ部１６Ａとその近傍の上方に光透過領域２３Ａを設けたフォトマスク２３を使って、フォトレジスト膜２２を露光する。このとき、露光光量を少なめに調節してフォトレジスト膜２２を露光し、露光光がフォトレジスト膜２２の底部まで到達しないようにする。 Next, after removing the photoresist film 20, as shown in FIG. 8, a second photo film having a film thickness on the upper surface of the n-type GaN substrate 10 covering the silicon nitride film 19 above the ridge portion 16 </ b> A. A resist film 22 is applied. Subsequently, the photoresist film 22 is exposed using a photomask 23 in which a light transmission region 23A is provided at least above the ridge portion 16A and the vicinity thereof. At this time, the amount of exposure light is adjusted slightly to expose the photoresist film 22 so that the exposure light does not reach the bottom of the photoresist film 22.
次に、図９に示すように、フォトレジスト膜２２を現像し、露光された部分のみを除去することによって、ｎ型ＧａＮ基板１０の上面にフォトレジスト膜２２の未露光部分を残す。このとき、リッジ部１６Ａの両側のｐ型クラッド層１６上に残ったフォトレジスト膜２２の上面の高さは、リッジ部１６Ａの上面の高さよりも低くなる。 Next, as shown in FIG. 9, the photoresist film 22 is developed and only the exposed portion is removed, thereby leaving an unexposed portion of the photoresist film 22 on the upper surface of the n-type GaN substrate 10. At this time, the height of the upper surface of the photoresist film 22 remaining on the p-type cladding layer 16 on both sides of the ridge portion 16A is lower than the height of the upper surface of the ridge portion 16A.
このように、本実施の形態の製造方法では、リッジ部１６Ａの上部に厚い膜厚の酸化シリコン膜１８を形成するので、この酸化シリコン膜１８の上部の窒化シリコン膜１９と、リッジ部１６Ａの両側のｐ型コンタクト層１７上に形成された窒化シリコン膜１９との段差は、酸化シリコン膜１８がない場合に比べて大きくなる。すなわち、リッジ部１６Ａの上部に厚い膜厚の酸化シリコン膜１８を形成することにより、リッジ部１６Ａが形成された領域とその周囲との実効的な段差が大きくなる。これにより、リッジ部１６Ａの両側に塗布されたフォトレジスト膜２２の膜厚を厚くすることができるので、フォトレジスト膜２２を露光する際の露光光量を調節することによって、リッジ部１６Ａの両側にフォトレジスト膜２２の未露光部分を残す際、その上面の高さ（未露光部分の膜厚）を高い寸法精度で制御することができる。 Thus, in the manufacturing method of the present embodiment, since the thick silicon oxide film 18 is formed on the ridge portion 16A, the silicon nitride film 19 on the silicon oxide film 18 and the ridge portion 16A are formed. The step difference from the silicon nitride film 19 formed on the p-type contact layers 17 on both sides is larger than that when the silicon oxide film 18 is not provided. That is, by forming the thick silicon oxide film 18 on the ridge portion 16A, an effective step between the region where the ridge portion 16A is formed and the periphery thereof is increased. Thus, the film thickness of the photoresist film 22 applied on both sides of the ridge portion 16A can be increased. Therefore, by adjusting the amount of exposure light when exposing the photoresist film 22, both sides of the ridge portion 16A are adjusted. When the unexposed portion of the photoresist film 22 is left, the height of the upper surface (film thickness of the unexposed portion) can be controlled with high dimensional accuracy.
これに対し、リッジ部１６Ａの上部に酸化シリコン膜１８を形成しない場合は、リッジ部１６Ａの上部の窒化シリコン膜１９と、リッジ部１６Ａの両側のｐ型クラッド層１６上に形成された窒化シリコン膜１９との段差が小さくなるので、リッジ部１６Ａの両側に塗布されたフォトレジスト膜２２の膜厚も薄くなる。従って、この場合は、フォトレジスト膜２２の表面から中途部分までを露光し、その下方に所望の膜厚の未露光部分を残すことが困難になる。 On the other hand, when the silicon oxide film 18 is not formed on the ridge portion 16A, the silicon nitride film 19 on the ridge portion 16A and the silicon nitride formed on the p-type cladding layers 16 on both sides of the ridge portion 16A. Since the step difference from the film 19 is reduced, the film thickness of the photoresist film 22 applied on both sides of the ridge portion 16A is also reduced. Accordingly, in this case, it is difficult to expose the surface from the surface of the photoresist film 22 to the middle portion and leave an unexposed portion having a desired film thickness below the exposed portion.
図１０は、上記した露光・現像後にｎ型ＧａＮ基板１０の上面に残ったフォトレジスト膜２２の未露光部分を原子間力顕微鏡(Atomic Force Microscope：ＡＦＭ）で測定した画像である。 FIG. 10 is an image obtained by measuring an unexposed portion of the photoresist film 22 remaining on the upper surface of the n-type GaN substrate 10 after the above-described exposure / development using an atomic force microscope (AFM).
次に、図１１に示すように、フォトレジスト膜２２を残した状態でｎ型ＧａＮ基板１０の上面をエッチングすることにより、リッジ部１６Ａの上方の酸化シリコン膜１８を除去する。このとき、ドライエッチングで酸化シリコン膜１８を除去すると、リッジ部１６Ａの表面にドライエッチングのダメージ（結晶欠陥）が生じるため、フッ酸系の薬液を用いたウェットエッチングで酸化シリコン膜１８を除去する。 Next, as shown in FIG. 11, the upper surface of the n-type GaN substrate 10 is etched with the photoresist film 22 left, thereby removing the silicon oxide film 18 above the ridge portion 16A. At this time, if the silicon oxide film 18 is removed by dry etching, dry etching damage (crystal defects) occurs on the surface of the ridge portion 16A. Therefore, the silicon oxide film 18 is removed by wet etching using a hydrofluoric acid chemical solution. .
前述したように、酸化シリコン膜１８の上面には、あらかじめ開口２１が形成されているので、開口２１の内部に入り込んだフッ酸系の薬液によって酸化シリコン膜１８のエッチングが進行する。この時、エッチング時間を適当に調整することにより、酸化シリコン膜１８のエッチングを縦方向だけでなく、横方向にも進行させることができる。 As described above, since the opening 21 is formed in advance on the upper surface of the silicon oxide film 18, the etching of the silicon oxide film 18 proceeds by the hydrofluoric acid chemical solution that has entered the opening 21. At this time, the etching of the silicon oxide film 18 can be advanced not only in the vertical direction but also in the horizontal direction by appropriately adjusting the etching time.
そして、酸化シリコン膜１８がエッチングされて消失すると、酸化シリコン膜１８の上部の窒化シリコン膜１９も取り除かれるので、ｐ型コンタクト層１７の上面が露出する。また、リッジ部１６Ａの側面および酸化シリコン膜１８の側面には薄い窒化シリコン膜１９が形成されているが、窒化シリコン膜１９の膜厚が薄い場合は、上記の薬液によって除去されるので、リッジ部１６Ａの側面の一部も露出する。 When the silicon oxide film 18 is etched away, the silicon nitride film 19 above the silicon oxide film 18 is also removed, so that the upper surface of the p-type contact layer 17 is exposed. Further, a thin silicon nitride film 19 is formed on the side surface of the ridge portion 16A and the side surface of the silicon oxide film 18, but when the silicon nitride film 19 is thin, it is removed by the above chemical solution. A part of the side surface of the portion 16A is also exposed.
なお、リッジ部１６Ａの側面および酸化シリコン膜１８の側面を覆っている窒化シリコン膜１９の膜厚が比較的厚い場合は、熱リン酸系の薬液を用いたウェットエッチングで上記側面の窒化シリコン膜１９を除去した後、フッ酸系の薬液で酸化シリコン膜１８を除去してもよい。この場合は、酸化シリコン膜１８の側面からもエッチングが進行するので、酸化シリコン膜１８を短時間で除去することができる。 If the silicon nitride film 19 covering the side surface of the ridge portion 16A and the side surface of the silicon oxide film 18 is relatively thick, the silicon nitride film on the side surface is formed by wet etching using a hot phosphoric acid chemical solution. After removing 19, the silicon oxide film 18 may be removed with a hydrofluoric acid chemical solution. In this case, since the etching also proceeds from the side surface of the silicon oxide film 18, the silicon oxide film 18 can be removed in a short time.
次に、図１２に示すように、例えば真空蒸着法を用いてｎ型ＧａＮ基板１０の表面にＡｕ（金）膜などの金属膜を被着し、続いてこれらの金属膜をパターニングすることによって、ｐ型コンタクト層１７の上面と側面の一部とに電気的に接続されるｐ側電極２４を形成する。 Next, as shown in FIG. 12, by depositing a metal film such as an Au (gold) film on the surface of the n-type GaN substrate 10 using, for example, a vacuum deposition method, and subsequently patterning these metal films. The p-side electrode 24 electrically connected to the upper surface of the p-type contact layer 17 and a part of the side surface is formed.
次に、ｎ型ＧａＮ基板１０の裏面を研削して基板厚を１００μｍ程度まで薄くした後、図１３に示すように、ｎ型ＧａＮ基板１０の裏面にｎ側電極２５を形成する。ｎ側電極２５は、例えばｎ型ＧａＮ基板１０の裏面側全面にＴｉ（チタン）膜およびＡｌ膜を順次堆積することによっって形成する。 Next, after grinding the back surface of the n-type GaN substrate 10 to reduce the substrate thickness to about 100 μm, an n-side electrode 25 is formed on the back surface of the n-type GaN substrate 10 as shown in FIG. The n-side electrode 25 is formed, for example, by sequentially depositing a Ti (titanium) film and an Al film on the entire back surface side of the n-type GaN substrate 10.
本実施の形態の製造方法によれば、リッジ部１６Ａの高さ（膜厚）が０．５μｍ以下であっても、リッジ部１６Ａの側面を高い寸法精度で露出させることができるので、ｐ側電極２４をｐ型コンタクト層１７の上面と側面の一部とに電気的に接続させることが可能となる。 According to the manufacturing method of the present embodiment, even when the height (film thickness) of the ridge portion 16A is 0.5 μm or less, the side surface of the ridge portion 16A can be exposed with high dimensional accuracy. The electrode 24 can be electrically connected to the upper surface of the p-type contact layer 17 and a part of the side surface.
これにより、リッジ部１６Ａとｐ側電極２４のコンタクト抵抗を低減することができるので、窒化物レーザダイオードの動作電圧の低減を図ることができ、特性の向上した窒化物レーザダイオードを製造することができる。 As a result, the contact resistance between the ridge portion 16A and the p-side electrode 24 can be reduced, so that the operating voltage of the nitride laser diode can be reduced, and a nitride laser diode with improved characteristics can be manufactured. it can.
以上、本発明者によってなされた発明を実施の形態に基づき具体的に説明したが、本発明は前記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることはいうまでもない。 As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.
例えば、前記実施の形態では、ｐ型クラッド層をＡｌＧａＮで構成した例について述べたが、本発明は、ｐ型クラッド層が他の窒化物半導体材料で構成される場合にも適用することができる。 For example, in the above-described embodiment, the example in which the p-type cladding layer is made of AlGaN has been described. However, the present invention can also be applied when the p-type cladding layer is made of another nitride semiconductor material. .
また、前記実施の形態では、基板材料としてｎ型ＧａＮを使用した例について述べたが、サファイア、ＳｉＣ（炭化珪素）など、窒化物半導体が成長しうる基板材料であれば、如何なる基板材料を用いてもよい。 In the above embodiment, an example in which n-type GaN is used as a substrate material has been described. However, any substrate material can be used as long as a nitride semiconductor such as sapphire or SiC (silicon carbide) can grow. May be.
本発明は、凸状のリッジ部が形成されるｐ型クラッド層を窒化物半導体で構成した窒化物レーザダイオードの製造に適用することができる。 The present invention can be applied to the manufacture of a nitride laser diode in which a p-type cladding layer in which a convex ridge portion is formed is made of a nitride semiconductor.
１０ ｎ型ＧａＮ基板
１１ ｎ型バッファ層
１２ ｎ型クラッド層
１３ ｎ型ガイド層
１４ 活性層
１５ 電子ブロック層
１６ ｐ型クラッド層
１６Ａ リッジ部
１７ ｐ型コンタクト層
１８ 酸化シリコン膜
１９ 窒化シリコン膜
２０Ａ 開口
２１ 開口
２２ フォトレジスト膜
２３ フォトマスク
２３Ａ 透過領域
２４ ｐ側電極
２５ ｎ側電極
２６ フォトレジスト膜
10 n-type GaN substrate 11 n-type buffer layer 12 n-type cladding layer 13 n-type guide layer 14 active layer 15 electron block layer 16 p-type cladding layer 16A ridge portion 17 p-type contact layer 18 silicon oxide film 19 silicon nitride film 20A opening 21 opening 22 photoresist film 23 photomask 23A transmission region 24 p-side electrode 25 n-side electrode 26 photoresist film
Claims (5)
（ｂ）前記ｐ型コンタクト層の上部に形成した第１絶縁膜をマスクにして、前記ｐ型コンタクト層および前記ｐ型クラッド層をドライエッチングすることにより、前記ｐ型クラッド層の一部に凸状のリッジ部を形成する工程と、
（ｃ）前記ｐ型コンタクト層の上部に前記第１絶縁膜を残した状態で、前記基板上に第２絶縁膜からなるパッシベーション膜を形成する工程と、
（ｄ）前記（ｃ）工程の後、前記リッジ部の上方に開口を設けた第１フォトレジスト膜をマスクにして前記リッジ部の上方の前記パッシベーション膜およびその下部の前記第１絶縁膜をエッチングすることにより、前記パッシベーション膜およびその下部の前記第１絶縁膜に、その底部が前記第１絶縁膜の下部の前記リッジ部に達しない程度の深さを有する第１開口を形成する工程と、
（ｅ）前記第１フォトレジスト膜を除去した後、前記基板上の全面に第２フォトレジスト膜を塗布する工程と、
（ｆ）露光光が前記第２フォトレジスト膜の底面まで到達しないような露光条件下で、少なくとも前記リッジ部とその近傍を覆う領域の前記第２フォトレジスト膜を露光する工程と、
（ｇ）前記（ｆ）工程の後、前記第２フォトレジスト膜を現像することにより、前記リッジ部の上方の前記第２フォトレジスト膜を除去すると共に、前記リッジ部の両側の前記パッシベーション膜上に、その上面の高さが前記リッジ部の上面の高さよりも低くなるような膜厚を有する前記第２フォトレジスト膜を残す工程と、
（ｈ）前記（ｇ）工程の後、前記第２フォトレジスト膜をマスクにしたウェットエッチングにより、前記リッジ部の上方の前記第１絶縁膜およびその上部のパッシベーション膜と、前記第１絶縁膜の側面を覆う前記パッシベーション膜と、前記リッジ部の側面のうち、前記第２フォトレジスト膜の上面よりも上方の部分を覆う前記パッシベーション膜とを除去し、前記ｐ型コンタクト層の上面と側面の一部とを露出させる工程と、
（ｉ）前記第２フォトレジスト膜を除去した後、前記（ｈ）工程で露出させた前記ｐ型コンタクト層の前記上面と前記側面の一部とに接する電極を形成する工程と、
を含むことを特徴とする窒化物半導体レーザ装置の製造方法。 (A) growing a p-type cladding layer and a p-type contact layer mainly composed of at least an n-type cladding layer, an active layer, and a nitride semiconductor on a substrate;
(B) Using the first insulating film formed on the p-type contact layer as a mask, the p-type contact layer and the p-type clad layer are dry-etched, thereby projecting part of the p-type clad layer. Forming a ridge-shaped portion,
(C) forming a passivation film made of a second insulating film on the substrate while leaving the first insulating film on the p-type contact layer;
(D) After the step (c), the passivation film above the ridge portion and the first insulating film below the ridge portion are etched using the first photoresist film having an opening above the ridge portion as a mask. Forming a first opening in the passivation film and the first insulating film below the first opening having a depth that does not reach the ridge portion below the first insulating film;
(E) after removing the first photoresist film, applying a second photoresist film over the entire surface of the substrate;
(F) exposing the second photoresist film in a region covering at least the ridge portion and the vicinity thereof under exposure conditions such that exposure light does not reach the bottom surface of the second photoresist film;
(G) After the step (f), the second photoresist film is developed to remove the second photoresist film above the ridge portion, and on the passivation film on both sides of the ridge portion. And leaving the second photoresist film having a thickness such that the height of the upper surface is lower than the height of the upper surface of the ridge portion;
(H) After the step (g), by wet etching using the second photoresist film as a mask, the first insulating film above the ridge portion, the passivation film above the ridge portion, and the first insulating film The passivation film covering the side surface and the passivation film covering a portion of the side surface of the ridge portion above the upper surface of the second photoresist film are removed, and the p-type contact layer has a top surface and a side surface. Exposing the part,
(I) after removing the second photoresist film, forming an electrode in contact with the upper surface and part of the side surface of the p-type contact layer exposed in the step (h);
A method for manufacturing a nitride semiconductor laser device, comprising:
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