JP2012182351A - Substrate processing apparatus and substrate transfer method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve wafer 14 transportation to a boat 30 by making a slot other than the slot for which transfer was inhibited hold the wafer 14 without transferring a substrate to the slot for which transfer was inhibited in wafer 14 transportation.SOLUTION: A substrate processing apparatus comprises: a boat 30 which retains a wafer 14 in a mounting part; a pod 16 which arranges the wafer 14 in a plurality of slots; a substrate transfer device 28 composed so as to transport one or a plurality of wafers 14; and a controller 152 which selects and transfers the one or plurality of the wafers to the port 30 while retaining the one or plurality of the wafers in another mounting part other than the specific mounting part when a specific mounting part receives a transfer inhibition specification.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate, and more particularly to substrate transfer control.

  In the heat treatment apparatus, a substrate as an object to be processed is stored in a carrier as a substrate container and stored in a predetermined storage shelf in the heat treatment apparatus. When performing the heat treatment, the substrate is transferred from the carrier to a boat as a substrate holder.

  The boat as the substrate holder is grooved at equal intervals from the uppermost slot as the uppermost mounting portion to the lowermost slot as the lowermost holding portion according to the number of substrates that can be held, The substrate can be held in all slots. The placement of the board on the boat is specified by the user, and the method specifies the direct designation that directly assigns the board type to each slot, specifies the presence / absence and number of sheets for each type, and the placement is automatically designated by the program. There is a logical specification. For example, as represented by Patent Document 2 for direct designation and Patent Document 3 for logical designation, the transfer position is set so that the monitor wafer is evenly transferred according to the number of monitor wafers (test substrates). It is disclosed to calculate, further create transfer data of all wafers (substrates), and perform transfer work according to the transfer data. As described above, the vertical apparatus is configured to transfer the substrate to the predetermined mounting portion (boat slot) with respect to the substrate holder (boat). However, in the vertical apparatus as described above, the bending of the substrate holder (boat) may be a problem due to the influence of heat treatment. Further, when it becomes impossible to place a substrate on a predetermined placement portion (boat slot) due to a part of the substrate holder (boat) being missing, the substrate holder (boat) has to be replaced.

  Moreover, SiC attracting attention as an element material for power devices is formed by SiC epitaxial film growth performed under high temperature conditions. In particular, there is Patent Document 1 as an example of a vertical heat treatment apparatus as a substrate processing apparatus capable of improving productivity by uniformly forming a plurality of SiC films.

In Patent Document 1, an apparatus for forming an SiC epitaxial film is a substrate processing apparatus having a vertical structure that processes a plurality of substrates stacked in a vertical direction in a reaction chamber, and is arranged in an array region of the substrates in the reaction chamber. The SiC epitaxial film is formed with an apparatus configuration in which the temperature in the installed gas supply nozzle exceeds the decomposition temperature of the Si source gas. At this time, since the substrate holder (boat) itself is bent due to the influence of the heat treatment, the substrate holder (boat) needs to have a special configuration for suppressing the bending.

JP 2011-003885 A JP 2009-231748 A Japanese Patent No. 3594090

  In view of such circumstances, the present invention makes it possible to prohibit transfer of a substrate holder to a predetermined mounting portion in substrate transfer, and to transfer the substrate to the substrate holder so as to solve the above problems. It is an object of the present invention to provide a substrate processing apparatus and a substrate transfer method for realizing the above.

  A typical example of the present invention for solving the above problems is configured to transport a plurality of or one substrate to a substrate holder that holds a substrate on a mounting portion, and the substrate holder. When the transfer means and the specific placement unit receive the transfer prohibition designation, the number of transported sheets is selected from one or more and the substrate is placed on the other placement unit excluding the specific placement unit A heat treatment apparatus having a transfer control means for transferring to, and further, a drive means for carrying a substrate holder in which a plurality of substrates are mounted in a vertical direction into a reaction chamber and unloading the plurality of substrates from the reaction chamber; And a processing control unit that executes a predetermined process recipe and performs a predetermined process (for example, a process of forming a SiC film, a process of annealing in an ultra-high temperature atmosphere) on the substrate.

  Another typical example of the present invention for solving the above-described problem is a substrate transfer method including a step of transporting a plurality of substrates or a single substrate to a substrate holder that holds the substrate on the mounting portion. In order to avoid contact with a specific placement unit designated as a placement unit that is prohibited from being transferred, the number of transported sheets is selected from one or more and the substrate is excluded from the specific placement unit. This is a substrate transfer method for transferring to another placement unit.

  According to the present invention, even if a part of the substrate holder that holds a plurality of substrates in a horizontal state is designated as a placement-inhibited placement unit, the support unit of the transfer machine and the substrate holder It is possible to avoid the contact with the mounting portion and to place the substrate only on the mounting portion where transfer is not prohibited.

1 is a perspective view of a semiconductor manufacturing apparatus to which the present invention is applied. It is side surface sectional drawing of the processing furnace to which this invention is applied. It is a plane sectional view of a processing furnace to which the present invention is applied. It is a block diagram which shows the control structure of the semiconductor manufacturing apparatus with which this invention is applied. It is a figure which shows an example of the board | substrate holder of this invention. It is an example of the outline of the plane sectional view of the processing furnace of the present invention. It is an example of the operation screen of the semiconductor manufacturing apparatus with which this invention is applied. This is a process (direct designation) at the time of designation of transfer to a transfer prohibited slot in the present invention. This is processing (logic designation) when designating transfer to a transfer prohibited slot in the present invention. The access of the transfer machine to the transfer prohibition slot in the present invention is illustrated. It is a figure explaining the board | substrate conveyance designation | designated sequence to the board | substrate holder to which this invention is applied. It is a figure which shows the flow in which the transfer method designation | designated table is created by a board | substrate conveyance designation | designated sequence.

The embodiment of the present invention prepares a transfer prohibition parameter (not shown) for specifying a boat slot as a placement unit to be prohibited from transfer. Then, as shown in FIG. 7, in the method of directly designating the boat slot as the mounting portion, the boat slot designated for transfer prohibition (hereinafter referred to as “transfer prohibition slot”) should not be erroneously input as explicit or input prohibition. To. FIG. 8 shows the transfer processing of the transfer prohibition slot. When the transfer prohibition slot is designated, the designation input is invalidated, or an error is notified when the transfer is designated and the transfer is not executed. FIG. 9 describes the transfer process when transfer prohibition is specified in logic specification. Although the transfer designation is the same as before, transfer is not performed in the transfer prohibition slot. As described above, by using the parameter for specifying the transfer prohibition slot, the final arrangement excluding the transfer prohibition slot from the transfer target is determined in any of the direct designation and logical designation methods.

Even if it is specified that the substrate as the object to be processed is not placed in the final placement designation for the transfer prohibition slot, if a plurality of transfer machines as transport means can be transported simultaneously, Therefore, it is assumed that the transfer machine as the transport means transports. For example, when the substrate is not supported by the substrate support unit in the batch conveyance of five sheets, there is a possibility that the transfer operation is executed as it is. In order to avoid this, a transfer prohibition slot is designated when determining a transfer method to a boat as a substrate holder as shown in FIG. When a part of the transfer machine (particularly the arm that is the substrate support unit) is specified to transport to the transfer prohibition slot, the transfer method of the target substrate is limited to, for example, one sheet transfer, and in particular the substrate support unit A certain arm is prevented from performing the transfer operation to the transfer prohibition slot.

A transfer program is executed to determine whether to transfer the transfer machine in a batch of five sheets or to limit the transfer to one sheet so as not to access the transfer prohibition slot. Next, with reference to FIG. 11, the transfer designation to the boat slot executed by the transfer program will be described.

First, the transfer method designation table is initialized. Then, it accepts designation of a transfer prohibition slot which is a specific boat slot for which transfer is prohibited in the transfer method designation table. Here, a transfer prohibition parameter (not shown) for specifying a slot as a holding unit to be transferred prohibited prepared in advance is read. The boat slot (transfer prohibition slot) designated by the parameter is designated as untransferable (transfer prohibition). Needless to say, the transfer prohibition slot is not limited to one place as in the present embodiment, as will be described later. Further, the conveyance program may be configured so that it can be directly specified on a predetermined screen. Next, it is checked whether or not a transfer operation can be performed in a batch of five for a carrier as a substrate container. Here, if the conveyance is impossible, one sheet is conveyed. On the other hand, if it is in a state in which 5 sheets can be transported collectively, it is checked whether 5 sheets can be transported collectively to a boat as a substrate holder. If it is determined that conveyance is not possible, one-sheet conveyance is designated. If it is determined that conveyance is possible, five-sheet batch conveyance is designated.

The above-described transfer program for specifying the 5-sheet batch transfer and the single-sheet transfer is executed so as to sequentially specify from the uppermost boat slot to the lowermost boat slot. In particular, in the vicinity of the boat slot where transfer is prohibited, the transfer operation may be performed in the transfer prohibition slot when the five-sheet transfer is performed collectively, so the number of transfer is limited. In the present embodiment, it is limited to single sheet conveyance. However, for example, the limited number of transported sheets may be any number as long as the number is less than 5 and the transfer machine does not perform the transport operation to the transfer prohibition slot. It should be noted that the boat slot for which the number of sheets to be transferred can be determined by the transfer program can be specified so as to be sequentially determined from the opposite lowest boat slot to the uppermost boat slot.

FIG. 12 shows how the transfer method designation table is created. Next, a process in which a transfer method designation table is created by the transfer program will be described with reference to FIG. In FIG. 12, there are only 10 slots, but this is for illustrating an example of the embodiment, and the number of slots is not limited to this. For example, in the case of a substrate holding unit (boat) of a vertical apparatus, the number of slots from the uppermost slot to the lowermost slot is usually 100 or more.

FIG. 12A shows a state where the transfer program is activated and the transfer method designation table is initialized. Here, all target slots are unspecified.
FIG. 12B shows a state where the transfer program next reads the transfer prohibition parameter and designates the transfer prohibition slot. Of course, it may be configured so that the transfer prohibition slot can be directly designated on the screen. Here, slot number 8 is designated as a transfer prohibited slot.
In FIG. 12C, when the designation of the transfer prohibition slot is completed, the transfer program sequentially designates from the uppermost boat slot to the lowermost boat slot. In the illustrated example, a state in which one sheet is designated to be conveyed in slot number 10 is shown. This is because it is determined whether or not it is possible to specify the simultaneous transfer of five sheets (collectively transferring the substrates from slot number 10 to slot number 6), and slot number 8 is designated as a transfer-prohibited slot. judge. Therefore, as described above, the conveyance program switches to single sheet conveyance designation and designates only slot number 10. At this time, information as to whether one sheet conveyance or five sheet batch conveyance is designated may be added to the transfer method designation table.
FIG. 12D shows a state designated to carry one sheet in slot number 9 as in FIG.
In FIG. 12E, since slot number 8 is designated as a transfer-inhibited slot, the next five slot numbers 7 are transported collectively (the substrate is transported collectively from slot number 7 to slot number 3). Indicates a state where is specified. Finally, the transfer program is executed until transfer is designated to slot number 1 which is the lowest slot. In the present embodiment, one and five sheets are used, but it is needless to say that the present embodiment is not limited to the present embodiment as long as it is a combination of one sheet and a plurality of sheets. Basically, it depends on the number of arms that are substrate support parts connected to the transfer machine. For example, two arms may be transported by controlling so as to move only the arms less than the number of arms.

As described above, in the vicinity of the transfer prohibition slot, the transfer is limited to one sheet, and control is performed so that a part of the transfer machine (arm as a substrate support unit) does not approach the transfer prohibition slot. Accordingly, the conveyance to the transfer prohibition slot is prohibited, and the operation on the partially damaged boat (substrate holder) in which the object to be processed cannot be arranged in the specific slot (boat slot) becomes possible.

For example, the operation rate of the apparatus is improved by continuously using the partially damaged boat until the alternative boat is prepared. This is a particularly effective operation when the number of mounting parts (boat slots) is 100 or more in the substrate holding part (boat) of the vertical apparatus.
In addition, as described above, the substrate transfer method when the transfer prohibition slot is included is used when a special boat (substrate holder) in which a reinforcing plate is fixed to a specific slot (boat slot) is used. Especially effective. The reinforcing plate may be employed when the boat itself is bent due to the influence of heat treatment. For example, as an example of the heat treatment at an extremely high temperature that causes the boat itself to bend, there is a process of forming a SiC epitaxial film.

  Hereinafter, an apparatus for forming a SiC epitaxial film will be described. It is known that SiC is difficult to produce a crystal substrate or a device as compared with silicon (hereinafter referred to as Si). On the other hand, when manufacturing a device using SiC, a wafer in which a SiC epitaxial film is formed on a SiC substrate is used. In the following embodiments, a so-called batch type vertical SiC epitaxial growth apparatus in which SiC wafers are arranged in the height direction in a SiC epitaxial growth apparatus which is an example of a substrate processing apparatus will be described. In addition, by setting it as a batch type vertical SiC epitaxial growth apparatus, the number of the SiC wafers which can be processed at once increases and a throughput improves.

  As an apparatus for forming a SiC epitaxial film, a representative example of an embodiment of the present invention is provided so as to cover a reaction chamber in which a plurality of substrates are arranged in a longitudinal direction, and to cover the reaction chamber. A first gas having a heating unit that heats the gas and a first gas supply port that is provided along the plurality of substrates in the reaction chamber and ejects a first gas in a direction in which the plurality of substrates are arranged. A supply pipe; and a second gas supply pipe provided in the reaction chamber along the plurality of substrates and having a second gas supply port for ejecting a second gas in a direction in which the plurality of substrates are arranged. And a first shielding part that suppresses at least the flow of the second gas toward the first gas supply port.

<Overall configuration>
First, referring to FIG. 1, a substrate processing apparatus for forming a SiC epitaxial film, a substrate transfer method, and a SiC epitaxial film which is one of manufacturing steps of a semiconductor device according to the first embodiment of the present invention. A method for manufacturing a substrate on which a film is formed will be described.

  A semiconductor manufacturing apparatus 10 as a substrate processing apparatus (film forming apparatus) is a batch vertical type heat treatment apparatus, and includes a housing 12 in which main parts are arranged. The semiconductor manufacturing apparatus 10 includes a hoop (hereinafter referred to as a pod) 16 as a wafer carrier (substrate accommodation) as a substrate container for accommodating a wafer 14 (see FIG. 2) as a substrate composed of, for example, Si or SiC. Used as a container). A pod stage 18 is disposed on the front side of the housing 12, and the pod 16 is conveyed to the pod stage 18. For example, 25 wafers 14 are stored in the pod 16 and set on the pod stage 18 with the lid closed.

  A pod transfer device 20 is disposed in a front face of the housing 12 and at a position facing the pod stage 18. A pod storage shelf 22, a pod opener 24, and a substrate number detector 26 are disposed in the vicinity of the pod transfer device 20. The pod storage shelf 22 is disposed above the pod opener 24 and is configured to hold a plurality of pods 16 mounted thereon. The substrate number detector 26 is disposed adjacent to the pod opener 24, and the pod transfer device 20 transfers the pod 16 among the pod stage 18, the pod storage shelf 22, and the pod opener 24. The pod opener 24 opens the lid of the pod 16, and the substrate number detector 26 detects the number of wafers 14 in the pod 16 with the lid opened.

  In the housing 12, a substrate transfer machine 28 as a transport means and a boat 30 as a substrate holder are arranged. FIG. 5 is an example of the boat 30, and a reinforcing plate is fixed to a specific boat slot as a mounting portion of the boat 30. This reinforcing plate has substantially the same shape as the wafer 14. The material is the same as that of the wafer 14. The substrate transfer device 28 has an arm (tweezer) 32 as a substrate support portion, and has a structure that can be moved up and down and rotated by a driving means (not shown). The arm 32 can take out the wafer 14 in one or five batches, for example, and by moving the arm 32, the wafer 14 is interposed between the pod 16 and the boat 30 placed at the position of the pod opener 24. Transport. The substrate transfer device 28 selects either a plurality or one of the wafers 14 so as not to contact the specific boat slot, and transfers the wafer 14 to another slot excluding the specific slot.

  The boat 30 is made of a heat resistant material such as carbon graphite or SiC. The boat 30 is configured such that a plurality of wafers 14 are aligned in a horizontal posture and aligned in the center, stacked in the vertical direction, and held in a boat slot as a mounting portion. Note that a boat heat insulating portion 34 is disposed as a disk-shaped heat insulating member made of a heat resistant material such as quartz or SiC at the lower portion of the boat 30, and heat from the heated body 48 to be described later is processed. It is configured to be difficult to be transmitted to the lower side of the furnace 40.

  The processing furnace 40 is disposed in the upper part on the back side in the housing 12. The boat 30 loaded with a plurality of wafers 14 is loaded into the processing furnace 40 and subjected to heat treatment.

<Processing furnace configuration>
Next, the processing furnace 40 of the semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film will be described with reference to FIGS. The processing furnace 40 is typically represented by a first gas supply nozzle 60 having a first gas supply port 68, a second gas supply nozzle 70 having a second gas supply port 72, and a first gas exhaust port 90. One example is shown as an example. In addition, a third gas supply port 360 and a second gas exhaust port 390 for supplying an inert gas are shown.

  The processing furnace 40 includes the reaction tube 42 that forms a cylindrical reaction chamber 44. The reaction tube 42 is made of a heat-resistant material such as quartz or SiC, and is formed in a cylindrical shape having a closed upper end and an opened lower end. The reaction chamber 44 is formed in a hollow cylindrical portion inside the reaction tube 42, and the wafers 14 as substrates made of Si or SiC or the like are placed in a horizontal posture by the boat 30 and aligned with each other in the center. They are arranged so that they can be stored in a state where they are aligned, stacked in the vertical direction, and held. Note that the wafer 14 is not transferred to a specific boat slot to which the reinforcing plate is fixed. That is, although the boat 30 shown in FIG. 2 uses the boat 30 shown in FIG. 5, the reinforcing plate has the same shape as the wafer 14, so that the reinforcing plate and the wafer 14 cannot be distinguished from each other. It has become.

  A manifold 36 is disposed below the reaction tube 42 concentrically with the reaction tube 42. The manifold 36 is made of, for example, stainless steel and is formed in a cylindrical shape with an upper end and a lower end opened. The manifold 36 is provided so as to support the reaction tube 42. An O-ring (not shown) as a seal member is provided between the manifold 36 and the reaction tube 42. Since the manifold 36 is supported by a holding body (not shown), the reaction tube 42 is installed vertically. A reaction vessel is formed by the reaction tube 42 and the manifold 36.

  The processing furnace 40 includes a heated body 48 to be heated and an induction coil 50 as a magnetic field generating unit. The heated body 48 is disposed in the reaction chamber 44 and is heated by a magnetic field generated by the induction coil 50 provided outside the reaction tube 42. The heated body The reaction chamber 44 is heated by the heat generated at 48.

  In the vicinity of the object to be heated 48, a temperature sensor (not shown) is provided as a temperature detector for detecting the temperature in the reaction chamber 44. The induction coil 50 and the temperature sensor are electrically connected to a temperature control unit 52, and the reaction state is adjusted by adjusting the degree of energization to the induction coil 50 based on temperature information detected by the temperature sensor. It is configured to be controlled at a predetermined timing so that the temperature in the chamber 44 has a desired temperature distribution (see FIG. 4).

  Preferably, in the reaction chamber 44, between the first and second gas supply nozzles 60, 70 and the first gas exhaust port 90, the heated object 48, the wafer 14, A structure 400 that extends in the vertical direction and has an arc-shaped cross section is preferably provided in the reaction chamber 44 so as to fill a space between the object to be heated 48 and the wafer 14. For example, as shown in FIG. 3, by providing the structures 400 at the opposing positions, the gas supplied from the first and second gas supply nozzles 60 and 70 is supplied to the inner wall of the heated body 48. It is possible to prevent the wafer 14 from being detoured along. When the structure 400 is preferably made of a heat insulating material or carbon felt, heat resistance and generation of particles can be suppressed.

  Between the reaction tube 42 and the object 48 to be heated, a heat insulating material 54 made of, for example, a carbon felt that is not easily dielectric is provided. By providing the heat insulating material 54, the heat of the object 48 to be heated is provided. Can be prevented from being transmitted to the reaction tube 42 or the outside of the reaction tube 42.

  In addition, an outer heat insulating wall having, for example, a water cooling structure is provided outside the induction coil 50 so as to prevent the heat in the reaction chamber 44 from being transmitted to the outside so as to surround the reaction chamber 44. Yes. Further, a magnetic seal 58 is provided outside the outer heat insulating wall to prevent the magnetic field generated by the induction coil 50 from leaking outside.

  As shown in FIG. 2, at least one Si (silicon) atom-containing gas and Cl (chlorine) atom-containing gas are provided between the heated object 48 and the wafer 14 in order to supply the wafer 14 with a gas. A first gas supply nozzle 60 provided with a first gas supply port 68 is installed. In order to supply at least a C (carbon) atom-containing gas and a reducing gas to the wafer 14 at a location different from the first gas supply nozzle 60 between the object to be heated 48 and the wafer 14, at least A second gas supply nozzle 70 provided with one second gas supply port 72 is provided. Similarly, the first gas exhaust port 90 is also disposed between the heated object 48 and the wafer 14. In addition, the third gas supply port 360 and the second gas exhaust port 390 are disposed between the reaction tube 42 and the heat insulating material 54.

  The gas supplied to the first gas supply nozzle 60 and the second gas supply nozzle 70 described above is an example for explaining the device structure, and details thereof will be described later. Further, in this figure, for the sake of simplicity, the first gas supply nozzle 60 and the second gas supply nozzle 70 are arranged one by one, which will be described in detail later.

  The first gas supply port 68 and the first gas supply nozzle 60 are made of, for example, carbon graphite and are provided in the reaction chamber 44. The first gas supply nozzle 60 is attached to the manifold 36 so as to penetrate the manifold 36. Here, when the SiC epitaxial film is formed, the first gas supply port 68 has at least a Si (silicon) atom-containing gas, for example, a monosilane (hereinafter referred to as SiH4) gas and a Cl (chlorine) atom-containing gas. As an example, hydrogen chloride (hereinafter referred to as HCl) gas is supplied into the reaction chamber 44 through the first gas supply nozzle 60.

  The first gas supply nozzle 60 is connected to the first gas line 222. The first gas line 222 is connected to, for example, gas pipes 213a and 213b, and the gas pipes 213a and 213b are mass flow controllers (hereinafter referred to as MFC) as flow rate controllers (flow rate control means) for SiH 4 gas and HCl gas, respectively. For example, it is connected to SiH4 gas supply source 210a and HCl gas supply source 210b via 211a and 211b and valves 212a and 212b.

  With the above configuration, for example, the supply flow rate, concentration, partial pressure, and supply timing of SiH 4 gas and HCl gas can be controlled in the reaction chamber 44. The valves 212a and 212b and the MFCs 211a and 211b are electrically connected to a gas flow rate control unit 78, and are controlled at a predetermined timing so that the flow rate of the supplied gas becomes a predetermined flow rate. (See FIG. 4). The gas supply sources 210a and 210b for the SiH4 gas and the HCl gas, the valves 212a and 212b, the MFCs 211a and 211b, the gas pipes 213a and 213b, the first gas line 222, and the first gas supply nozzle, respectively. 60 and at least one first gas supply port 68 provided in the first gas supply nozzle 60 constitute a first gas supply system as a gas supply system.

  The second gas supply port 72 is made of, for example, carbon graphite and is provided in the reaction chamber 44. The second gas supply nozzle 70 is attached to the manifold 36 so as to penetrate the manifold 36. Here, when the SiC epitaxial film is formed, the second gas supply port 72 has at least a C (carbon) atom-containing gas, for example, propane (hereinafter referred to as C3H8) gas, and a reducing gas, for example, hydrogen ( H atoms alone or H2 molecules (hereinafter referred to as H2) are supplied into the reaction chamber 44 through the second gas supply nozzle 70. A plurality of the second gas supply nozzles 70 may be provided.

  The second gas supply nozzle 70 is connected to the second gas line 260. The second gas line 260 is connected to, for example, gas pipes 213c and 213d, and each of the gas pipes 213c and 213d is a C (carbon) atom-containing gas, for example, an MFC 211c as a flow control means for C3H8 gas, and It is connected to the C3H8 gas supply source 210c via the valve 212c, and connected to the H2 gas supply source 210d via the MFC 211d as the flow rate control means and the valve 212d as the reducing gas, for example, H2 gas.

  With the above configuration, for example, the supply flow rate, concentration, and partial pressure of C 3 H 8 gas and H 2 gas can be controlled in the reaction chamber 44. The valves 212c and 212d and the MFCs 211c and 211d are electrically connected to the gas flow rate control unit 78, and are controlled at a predetermined timing so that the supplied gas flow rate becomes a predetermined flow rate. (See FIG. 4). The gas supply sources 210c and 210d for C3H8 gas and H2 gas, the valves 212c and 212d, the MFCs 211c and 211d, the gas pipes 213c and 213d, the second gas line 260, the second gas supply nozzle 70, The second gas supply port 72 constitutes a second gas supply system as a gas supply system.

  Further, in the first gas supply nozzle 60 and the second gas supply nozzle 70, one of the first gas supply port 68 and the second gas supply port 72 is provided in the arrangement region of the substrate. It may be provided for every required number of wafers 14.

<Exhaust system>
As shown in FIG. 3, the first gas exhaust port 90 is disposed so as to face the positions of the first gas supply nozzle 60 and the second gas supply nozzle 70, and is connected to the manifold 36. The gas exhaust pipe 230 connected to the first gas exhaust port 90 is provided so as to pass therethrough. A vacuum exhaust device 220 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 230 via a pressure sensor (not shown) as a pressure detector and an APC (Auto Pressure Controller) valve 214 as a pressure regulator. Yes. A pressure control unit 98 is electrically connected to the pressure sensor and the APC valve 214, and the pressure control unit 98 adjusts the opening of the APC valve 214 based on the pressure detected by the pressure sensor, Control is performed at a predetermined timing so that the pressure in the processing furnace 40 becomes a predetermined pressure (see FIG. 4).

  As described above, at least Si (silicon) atom-containing gas and Cl (chlorine) atom-containing gas are supplied from the first gas supply port 68, and at least C (carbon) atoms are supplied from the second gas supply port 72. The contained gas and the reducing gas are supplied, and the supplied gas flows in parallel to the wafer 14 made of Si or SiC and is exhausted from the first gas exhaust port 90, so that the entire wafer 14 is efficient. And uniformly exposed to the gas.

  Further, as shown in FIG. 3, the third gas supply port 360 is disposed between the reaction tube 42 and the heat insulating material 54 and attached so as to penetrate the manifold 36. Further, the second gas exhaust port 390 is disposed between the reaction tube 42 and the heat insulating material 54 so as to be opposed to the third gas supply port 360, and the second gas The exhaust port 390 is connected to the gas exhaust pipe 230. The third gas supply port 360 is formed in a third gas line 240 that penetrates the manifold 36, and is connected to a gas supply source 210e through a valve 212e and an MFC 211e. For example, a rare gas Ar gas is supplied as an inert gas from the gas supply source 210e and contributes to the growth of the SiC epitaxial film, for example, a gas containing Si (silicon) atoms, a gas containing C (carbon) atoms, or Cl ( (Chlorine) atom-containing gas or a mixed gas thereof is prevented from entering between the reaction tube 42 and the heat insulating material 54, and unnecessary products are formed on the inner wall of the reaction tube 42 or the outer wall of the heat insulating material 54. Adhesion can be prevented.

  The inert gas supplied between the reaction tube 42 and the heat insulating material 54 passes through the APC valve 214 on the downstream side of the gas exhaust pipe 230 from the second gas exhaust port 390. The air is exhausted from the vacuum exhaust device 220.

<Control unit>
Next, referring to FIG. 4, the control configuration of each part constituting the semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film will be described.

  The temperature control unit 52, the gas flow rate control unit 78, the pressure control unit 98, and the drive control unit 108 constitute an operation unit and an input / output unit, and are electrically connected to the main control unit 150 that controls the entire semiconductor manufacturing apparatus 10. Connected. The temperature control unit 52, the gas flow rate control unit 78, the pressure control unit 98, and the drive control unit 108 are configured as a controller 152. Although not shown, the temperature control unit 52, the gas flow rate control unit 78, and the pressure control unit 98 may be configured as a process control unit.

<Details of gas supplied to each gas supply system>
Next, the reason for configuring the first gas supply system and the second gas supply system described above will be described. In a semiconductor manufacturing apparatus for forming a SiC epitaxial film, a source gas composed of at least a Si (silicon) atom-containing gas and a C (carbon) atom-containing gas is supplied to the reaction chamber 44 to form a SiC epitaxial film. Need to membrane. Further, as in this embodiment, in the case where a plurality of wafers 14 are held in a multi-stage alignment in a horizontal posture, in order to improve the uniformity between the wafers, a film forming gas is used in the vicinity of each wafer. A gas supply nozzle is provided in the reaction chamber 44 so that it can be supplied from a gas supply port. Therefore, the gas supply nozzle also has the same conditions as the reaction chamber. At this time, if the Si atom-containing gas and the C atom-containing gas are supplied by the same gas supply nozzle, the source gases react with each other to consume the source gases, and the source gas is insufficient on the downstream side of the reaction chamber 44. In addition, deposits such as SiC films that react and deposit in the gas supply nozzle block the gas supply nozzle, leading to problems such as unstable supply of the source gas and generation of particles.

  Therefore, in this embodiment, the Si atom-containing gas is supplied through the first gas supply nozzle 60 and the C atom-containing gas is supplied through the second gas supply nozzle 70. Thus, by supplying the Si atom-containing gas and the C atom-containing gas from different gas supply nozzles, it is possible to prevent the SiC film from being deposited in the gas supply nozzle. In addition, what is necessary is just to supply appropriate carrier gas, respectively, when adjusting the density | concentration and flow velocity of Si atom containing gas and C atom containing gas.

  Furthermore, a reducing gas such as hydrogen gas may be used in order to use the Si atom-containing gas more efficiently. In this case, it is desirable to supply the reducing gas through the second gas supply nozzle 70 that supplies the C atom-containing gas. In this way, the reducing gas is supplied together with the C atom-containing gas and mixed with the Si atom-containing gas in the reaction chamber 44, so that the reducing gas is reduced. Therefore, the decomposition of the Si atom-containing gas is compared with that during film formation. Therefore, the deposition of the Si film in the first gas supply nozzle can be suppressed. In this case, the reducing gas can be used as a carrier gas for the C atom-containing gas. Note that the use of an inert gas (particularly a rare gas) such as argon (Ar) as the carrier of the Si atom-containing gas can suppress the deposition of the Si film.

  Further, it is desirable to supply a chlorine atom-containing gas such as HCl to the first gas supply nozzle 60. In this way, even if the Si atom-containing gas is decomposed by heat and can be deposited in the first gas supply nozzle, it becomes possible to enter the etching mode with chlorine, and the first gas supply nozzle It is possible to further suppress the deposition of the Si film inside.

  In the example shown in FIG. 2, the configuration has been described in which the SiH 4 gas and the HCl gas are supplied to the first gas supply nozzle 60, and the C 3 H 8 gas and the H 2 gas are supplied to the second gas supply nozzle 70. As shown, the example shown in FIG. 2 is the combination considered to be the best and is not limited thereto.

  In the example shown in FIG. 2, HCl gas is exemplified as the Cl (chlorine) atom-containing gas to be flowed when forming the SiC epitaxial film, but chlorine gas may be used.

  In the above description, when the SiC epitaxial film is formed, a Si (silicon) atom-containing gas and a Cl (chlorine) atom-containing gas are supplied. However, a gas containing Si atoms and Cl atoms, for example, tetrachlorosilane (hereinafter referred to as SiCl4 and Gas), trichlorosilane (hereinafter referred to as SiHCl3) gas, and dichlorosilane (hereinafter referred to as SiH2Cl2) gas may be supplied. Needless to say, the gas containing Si atoms and Cl atoms is also a Si atom-containing gas or a mixed gas of Si atom-containing gas and Cl atom-containing gas. In particular, SiCl4 is desirable from the viewpoint of suppressing the consumption of Si in the nozzle because the temperature at which pyrolysis is relatively high.

  In the above description, C3H8 gas is exemplified as the C (carbon) atom-containing gas. However, ethylene (hereinafter referred to as C2H4) gas or acetylene (hereinafter referred to as C2H2) gas may be used.

  Moreover, although H2 gas was illustrated as reducing gas, it is not restricted to this, You may use other H (hydrogen) atom containing gas. Furthermore, as the carrier gas, at least one of rare gases such as Ar (argon) gas, He (helium) gas, Ne (neon) gas, Kr (krypton) gas, and Xe (xenon) gas may be used. Alternatively, a mixed gas in which the above gases are combined may be used.

<Configuration of gas supply nozzle>
Here, the deposition in the gas supply nozzle can be suppressed by devising a method for supplying a film forming gas that contributes to the formation of a SiC film such as a gas containing Si atoms. However, the film forming gas supplied separately is mixed immediately after jetting from the gas supply ports 68 and 72. If a film forming gas is mixed in the vicinity of the gas supply ports 68 and 72, there is a possibility that an SiC film is deposited on the gas supply port. As a result, generation of particles due to blockage of the gas supply port or peeling of the deposited SiC film. May occur.

  A structure for suppressing the deposition of the SiC film near the gas supply port will be described with reference to FIG. The gas supply method will be described as a separate method. First, the arrangement of the gas supply nozzle will be described with reference to FIG. FIG. 6 is a cross-sectional view of the reaction chamber 44 as viewed from above, and shows only necessary members for easy understanding. As shown in FIG. 6, the first gas supply nozzle 60 that supplies the Si atom-containing gas and the second gas supply nozzle 70 that supplies the C atom-containing gas are alternately arranged. By alternately arranging in this way, mixing of the Si atom-containing gas and the C atom-containing gas can be promoted. The first gas supply nozzle and the second gas supply nozzle are desirably an odd number. When the number is an odd number, the deposition gas supply can be made symmetrical about the second gas supply nozzle 70 at the center, and the uniformity in the wafer 14 can be improved.

  Moreover, in FIG. 6, the 2nd gas supply nozzle 70 which supplies C atom containing gas is arrange | positioned in the center and both ends, and the 1st gas supply nozzle 60 which supplies Si atom containing gas is 2nd gas supply. Although arranged between the nozzles, the first gas supply nozzles 70 for supplying the Si atom-containing gas are arranged in the center and at both ends, and the second gas supply nozzles 70 for supplying the Si atom-containing gas are provided in the first. You may make it arrange | position between 1 gas supply nozzles. The second gas supply nozzles 70 for supplying the C atom-containing gas are arranged at the center and at both ends, and the first gas supply nozzle 60 for supplying the Si atom-containing gas is interposed between the second gas supply nozzles. It is desirable to arrange. By arranging in this way, the gas flow on the wafer can be controlled by adjusting the flow rate ratio (center / both ends) of H2 that is supplied in large quantities as the carrier gas together with the C atom-containing gas (main field). And in-plane film thickness can be easily controlled.

<Method of forming SiC film>
Next, as a step of the semiconductor device manufacturing process using the semiconductor manufacturing apparatus 10 described above, a substrate manufacturing method for forming a SiC film, for example, on a substrate such as a wafer 14 made of SiC or the like will be described. . In the following description, the operation of each part constituting the semiconductor manufacturing apparatus 10 is controlled by the controller 152.

  First, when a pod 16 storing a plurality of wafers 14 is set on the pod stage 18, the pod 16 is transferred from the pod stage 18 to the pod storage shelf 22 by the pod transfer device 20 and stocked. Next, the pod transport device 20 transports and sets the pod 16 stocked in the pod storage shelf 22 to the pod opener 24, and opens the lid of the pod 16 by the pod opener 24. A detector 26 detects the number of wafers 14 accommodated in the pod 16.

  Next, the substrate transfer machine 28 removes the wafer 14 from the pod 16 at the position of the pod opener 24 so as not to contact a specific boat slot designated to prohibit the transfer of the wafer 14. The reinforcing plate is fixed to a slot corresponding to the specific boat slot by selecting either one or a plurality of wafers and holding the wafer 14 in another boat slot except the specific boat slot. Transfer to the boat 30.

  When a plurality of wafers 14 are loaded into the boat 30 having the reinforcing plate, the boat 30 holding the wafers 14 in a boat slot as a mounting portion excluding the specific boat slot is moved to the lifting motor 122. Is carried into the reaction chamber 44 (boat loading) by the lifting and lowering operation of the lifting platform 114 and the lifting shaft 124. In this state, the seal cap 102 is in a state of sealing the lower end of the manifold 36 through an O-ring (not shown).

  After carrying in the boat 30 provided with the reinforcing plate, the reaction chamber 44 is evacuated by the evacuation device 220 so that the inside of the reaction chamber 44 becomes a predetermined pressure (degree of vacuum). At this time, the pressure in the reaction chamber 44 is measured by a pressure sensor (not shown), and the APC communicated with the first gas exhaust port 90 and the second gas exhaust port 390 based on the measured pressure. The valve 214 is feedback controlled. Further, the object to be heated 48 is heated so that the inside of the wafer 14 and the reaction chamber 44 reach a predetermined temperature. At this time, the current supply to the induction coil 50 is feedback controlled based on temperature information detected by a temperature sensor (not shown) so that the reaction chamber 44 has a predetermined temperature distribution. Subsequently, the boat 30 is rotated by the rotating mechanism 104, whereby the wafer 14 is rotated in the circumferential direction. Further, since the boat 30 is provided with the reinforcing plate, the boat 30 is affected by the heat treatment and does not bend. Further, since the reinforcing plate is provided even if the bending occurs, the wafer 14 does not fall from the mounting portion, and the lot-out can be suppressed.

  Subsequently, Si (silicon) atom-containing gas and Cl (chlorine) atom-containing gas contributing to the SiC epitaxial growth reaction are respectively supplied from the gas supply sources 210 a and 210 b, and the reaction chamber is supplied from the first gas supply port 68. 44 is ejected into the interior. Further, after the opening degrees of the corresponding MFCs 211c and 211d are adjusted so that the C (carbon) atom-containing gas and the reducing gas H2 gas have a predetermined flow rate, the valves 212c and 212d are opened, respectively. The gas flows through the second gas line 260, flows through the second gas supply nozzle 70, and is introduced into the reaction chamber 44 through the second gas supply port 72.

  The gas supplied from the first gas supply port 68 and the second gas supply port 72 passes through the inside of the heated body 48 in the reaction chamber 44 and passes through the first gas exhaust port 90. The gas is exhausted through the gas exhaust pipe 230. When the gas supplied from the first gas supply port 68 and the second gas supply port 72 passes through the reaction chamber 44, the gas contacts the wafer 14 made of SiC or the like, and the surface of the wafer 14. A SiC epitaxial film is grown thereon. At that time, the flow toward the other gas supply port is suppressed by the shielding wall provided in the gas supply nozzle, and as a result, the wafer can be homogenized.

  Further, after the opening of the MFC 211e is adjusted from the gas supply source 210e so that Ar gas, which is a rare gas as an inert gas, has a predetermined flow rate, the valve 212e is opened, 3, and is supplied into the reaction chamber 44 from the third gas supply port 360. Ar gas that is a rare gas as an inert gas supplied from the third gas supply port 360 passes between the heat insulating material 54 and the reaction tube 42 in the reaction chamber 44, and the second gas is supplied to the second gas supply port 360. The gas is exhausted from the gas exhaust port 390.

  Next, when a preset time elapses, the supply of the gas is stopped, an inert gas is supplied from an inert gas supply source (not shown), and the inside of the object to be heated 48 in the reaction chamber 44 is supplied. The space is replaced with an inert gas, and the pressure in the reaction chamber 44 is returned to normal pressure.

  Thereafter, the seal cap 102 is lowered by the elevating motor 122, the lower end of the manifold 36 is opened, and the reaction tube is opened from the lower end of the manifold 36 in a state where the processed wafer 14 is held by the boat 30. The boat 30 is made to stand by at a predetermined position until the wafer 14 which has been unloaded (boat unloading) 42 and held on the boat 30 is cooled. When the wafer 14 of the boat 30 that has been waiting is cooled to a predetermined temperature, the substrate transfer device 28 takes out the wafer 14 from the boat 30 and transfers it to the empty pod 16 set in the pod opener 24. And store. At this time, similarly to the transfer of the wafer 14 to the boat 30, the arm 32 of the substrate transfer machine 28 is not brought close to the specific boat slot to the specific boat slot to which the reinforcing plate is fixed. Be controlled. Thereafter, the pod 16 in which the wafers 14 are stored by the pod transfer device 20 is transferred to the pod storage shelf 22 or the pod stage 18. In this way, a series of operations of the semiconductor manufacturing apparatus 10 is completed.

  As described above, at least Si (silicon) atom-containing gas and Cl (chlorine) atom-containing gas are supplied from the first gas supply port 68, and at least C (carbon) atoms are supplied from the second gas supply port 72. Since the contained gas and the reducing gas are supplied, the growth of the deposited film in the first gas supply nozzle 60 and the second gas supply nozzle 70 is suppressed, and the reaction chamber 44 contains the first gas. The Si (silicon) atom-containing gas, the Cl (chlorine) atom-containing gas, the C (carbon) atom-containing gas, and the reducing gas H2 gas, which are supplied from the gas supply nozzle 60 and the second gas supply nozzle 70, react. As a result, when a plurality of wafers 14 made of SiC or the like are held in a horizontal posture and in multiple stages, SiC epitaxial film growth can be performed uniformly.

  In this way, the film is deposited on the gas supply port by suppressing the flow of the second gas ejected from at least the second gas supply port 72 toward the first gas supply port 68 by the shielding wall as the shielding part. It is possible to suppress and manufacture a uniform wafer 14.

  In addition, according to the above-described embodiment, the substrate can be safely transferred to the substrate holder in a state where the reinforcing plate is fixed in order to withstand heat treatment at an ultra-high temperature. Processing can be performed.

As described above, in the present embodiment, when a part of the boat mounting portion (boat slot) is damaged or a reinforcing plate is fixed to the specific boat slot, Although it has been described that the transfer control is specified so that the transfer is prohibited and the transfer machine does not perform the transfer operation, this is similarly applied to the groove (slot) as the substrate placement portion of the carrier as the substrate container. It is possible to carry such that a specific slot is avoided by applying the above form.

Note that preferred embodiments of the present invention will be additionally described.
(1) According to one aspect of the present invention, a reaction chamber in which a plurality of substrates are arranged in a vertical direction, a heating unit that is provided so as to cover the reaction chamber and heats the processing chamber, and the reaction A first gas supply pipe provided in the chamber along the plurality of substrates and having a first gas supply port for ejecting a first gas in a direction in which the plurality of substrates are arranged; A second gas supply pipe having a second gas supply port provided along the plurality of substrates and ejecting a second gas in a direction in which the plurality of substrates are arranged; and at least the second gas is the first gas There is provided a substrate processing apparatus including a first shielding unit that suppresses a flow toward one gas supply port.
(2) In the substrate processing apparatus described in (1), the first shielding unit is provided at least on both sides of the first gas supply port, and the plurality of substrates are arranged from the first gas supply port. There is provided a substrate processing apparatus which is a shielding wall extending in a direction.
(3) In the substrate processing apparatus described in (1) or (2) above, the first gas is a mixed gas of a Si atom-containing gas and a C atom-containing gas, and the second gas is a reducing gas. A substrate processing apparatus is provided.
(4) In the substrate processing apparatus described in the above (3), the second gas supply nozzle is not provided with a shielding part that suppresses the flow of the first gas toward the second gas supply port. An apparatus is provided.
(5) In the substrate processing apparatus described in (1) or (2) above, the first gas is a Si atom-containing gas, and the second gas is a mixed gas of a C atom-containing gas and a reducing gas. A substrate processing apparatus is provided.
(6) In the substrate processing apparatus described in (5) above, the substrate processing apparatus further includes a second shielding unit that suppresses the flow of the first gas toward the second gas supply port, and the second shielding unit includes the second shielding unit, There is provided a substrate processing apparatus which is a second shielding wall provided on both sides of the second gas supply port and extending from the second gas supply port in a direction in which the plurality of substrates are arranged.
(7) In the substrate processing apparatus described in (1) above, the first shielding portion is ejected from the first gas flow of the first gas ejected from the first gas supply port and from the second gas supply port. There is provided a substrate processing apparatus which is a third gas flow of an inert gas provided between the second gas flow of the second gas.
(8) In the substrate processing apparatus described in (7) above, the inert gas is provided between the first gas supply nozzle and the second gas supply nozzle so as to extend along the plurality of substrates. A substrate processing apparatus having a third gas supply port is provided.
(9) In the substrate processing apparatus described in the above (8), there is provided the substrate processing apparatus in which the third gas supply port is directed in a direction closer to the first gas supply port than a central portion of the substrate.
(10) In the above (9), there is provided the substrate processing apparatus in which the third gas supply port is directed to the first gas supply port.
(11) In the substrate processing apparatus described in any one of (7) to (10) above, the first gas is a Si atom-containing gas, and the second gas is a C atom-containing gas. A substrate processing apparatus is provided.
(12) In the substrate processing apparatus described in any one of (7) to (10) above, the first gas is a mixed gas of a Si atom-containing gas and a C atom-containing gas, and the second gas Provides a substrate processing apparatus which is a reducing gas.
(13) According to another aspect of the present invention, a plurality of sheets or one sheet is selected so that the substrate is placed on the specific mounting unit so as not to contact the specific mounting unit that is designated for transfer prohibition. A transfer process for transferring to other mounting parts except for a boat, a boat loading process for loading a boat carrying a plurality of substrates in the vertical direction into the reaction chamber, and the plurality of substrates loaded into the reaction chamber As described above, the first gas is provided in the reaction chamber along the first gas from the first gas supply port provided in the first gas supply nozzle provided in the reaction chamber and the plurality of substrates carried into the reaction chamber. The second gas is supplied to the plurality of substrates from a second gas supply port provided in the second gas supply nozzle, and the first gas and the second gas are mixed to form the plurality of substrates on the plurality of substrates. A film forming step for forming a predetermined film; and A boat unloading step of unloading the plurality of substrates formed from the reaction chamber, and in the film formation step, the flow of the first gas toward the second gas supply port is suppressed by a shielding portion. A method for manufacturing a substrate is provided.
(14) According to another aspect of the present invention, a plurality of sheets or one sheet is selected so that the substrate is placed on the specific mounting portion so as not to contact the specific mounting portion that is designated for transfer prohibition. A transfer process for transferring to other mounting parts except for a boat, a boat loading process for loading a boat carrying a plurality of substrates in the vertical direction into the reaction chamber, and the plurality of substrates loaded into the reaction chamber As described above, the first gas is provided in the reaction chamber along the first gas from the first gas supply port provided in the first gas supply nozzle provided in the reaction chamber and the plurality of substrates carried into the reaction chamber. The second gas is supplied to the plurality of substrates from a second gas supply port provided in the second gas supply nozzle, and the first gas and the second gas are mixed to form the plurality of substrates on the plurality of substrates. A film forming step for forming a predetermined film; and A boat unloading step of unloading the plurality of substrates formed from the reaction chamber, and in the film formation step, the flow of the first gas toward the second gas supply port is suppressed by a shielding portion. A method for manufacturing a semiconductor device is provided.
(15) According to another aspect of the present invention, a plurality of sheets or one sheet is selected so that the substrate is placed on the specific mounting unit so as not to contact the specific mounting unit that is designated for transfer prohibition. There is provided a substrate transfer method including a transfer process of transferring to another mounting unit excluding.
(16) According to another aspect of the present invention, a plurality of sheets or one sheet is selected so that the substrate is placed on the specific mounting unit so as not to contact the specific mounting unit that is designated for transfer prohibition. There is provided a substrate processing apparatus provided with a conveyance control means for transferring to other placement units excluding.

  DESCRIPTION OF SYMBOLS 10: Semiconductor manufacturing apparatus, 12: Housing | casing, 14: Wafer, 16: Pod, 30: Boat, 40: Processing furnace, 42: Reaction tube, 44: Reaction chamber, 48: Heated object, 50: Induction coil, 60 : First gas supply nozzle, 68: first gas supply port, 70: second gas supply nozzle, 72: second gas supply port, 90: first gas exhaust port, 150: main control unit, 152: Controller.

Claims (2)

  A substrate holder for holding the substrate on the mounting portion, a substrate container for arranging the substrate on the plurality of substrate placement portions, a transport means configured to transport a plurality of or one substrate, and a specific When receiving the transfer prohibition designation on the placement unit, the substrate is transferred to the substrate holder while holding the substrate on another placement unit other than the specific placement unit while selecting either one or a plurality of sheets. A heat treatment apparatus. A substrate transfer method comprising a transfer step of transferring the substrate to a substrate holder that holds the substrate on the placement portion, wherein the specific placement portion designated as transfer prohibited in the transfer step In order to avoid contact with the substrate, either one of a plurality of substrates or a single substrate is selected and the substrate is held by other mounting portions other than the specific mounting portion, and the substrate is transferred to the substrate holder. Loading method.