JP2012165611A - Semiconductor unit and power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor unit capable of achieving a power conversion device which is easy to handle during work.SOLUTION: Collectors of switching elements (abbreviated as elements, hereinafter) 1a-1f and emitters of elements 2a-2f are connected to bus-bars 17 and 18 on an anode side and a cathode side, emitters E of the elements 1a-1c and collectors of the elements 2a-2c are connected to an AC conductor 13 to connect the elements 1a-1c and 2a-2c respectively in parallel and connect them in series through the AC conductor 13, emitters of the elements 1d-1f and collectors of the elements 2d-2f are connected to an AC conductor 14 to connect the elements 1d-1f and 2d-2f respectively in parallel and connect them in series through the AC conductor 14, and the semiconductor unit constituting one bridge of a power conversion device is attained. Three conductor units provided with terminals 17a, 17b, 18a and 18b are lined and arranged on both sides in the left-to-right direction of the bus-bars 17 and 18, the terminals are connected, and the easy-to-handle power conversion device is configured.

Description

  The present invention relates to a semiconductor unit and a power conversion device using the semiconductor unit, and more particularly to a semiconductor unit having a switching element group and a power conversion device using the semiconductor unit.

  In recent power converters, high-speed switching elements are used, and a high-frequency pulse width modulation (PWM) control method is widely adopted. Further, as the capacity of the apparatus is increased, large-capacity switching elements are connected in parallel. Is used. In the high-frequency pulse width modulation control method, surge voltage is likely to occur during switching due to reactance between switching elements, and high-speed switching elements are brought close to each other to reduce reactance, and the connection circuit length is shortened. A smoothing capacitor is placed at the position.

  Hereinafter, a conventional semiconductor unit will be specifically described. FIG. 21 is a circuit diagram showing a configuration of an uninterruptible power supply device which is a kind of power conversion device. In the figure, an AC input terminal 91 is inputted with a three-phase (R phase, S phase, T phase) AC voltage, and an input end of a converter 93 is connected via an input filter 92. In the converter 93, high-speed switching elements are connected in a three-phase bridge, and each switching element is turned on and off so that the power factor becomes 1, thereby converting alternating current into direct current. A smoothing capacitor 104 for removing direct current ripple and a storage battery 105 as a backup at the time of a power failure are connected to the output terminal of the converter 93. The input end of the inverter 106 is connected to the output end of the converter 93, and the output end of the inverter 106 is connected to the AC output terminal 108 via the output filter 107. Although not shown, the inverter 106 is connected to high-speed switching elements in a three-phase bridge, and these switching elements are turned on and off to convert direct current into alternating current. Therefore, a three-phase (U phase, V phase, W phase) sine wave AC voltage is generated at the AC output terminal 108.

  FIG. 22 is a circuit diagram of one bridge (for one phase) of the power conversion apparatus of FIG. 21 described above, and one bridge shown here is assembled as a semiconductor unit 800 (described later, FIG. 23). This circuit has series switching circuits 21 to 26. The series switching circuit 21 is formed by connecting the emitter E of the positive-side switching element 1a, which is a transistor, and the collector C of the negative-side switching element 2a through a series connection portion AC. Similarly, each of the series switching circuits 22 to 26 is configured such that the emitters E of the switching elements 1b to 1f on the positive side and the collectors C of the switching elements 2b to 2f are connected to each other through the series connection portion AC. . The collectors C of the positive side switching elements 1a to 1f of the series switching circuits 21 to 26 are commonly connected to the positive side bus bar 10, and the emitters E of the negative side switching elements 2a to 2f are connected to the negative side bus bar 11. Commonly connected. Moreover, each series connection part AC of each series switching circuit 21-23 is connected in common to the AC conductor 13, and each series connection part AC of each series switching circuit 24-26 is connected in common to the AC conductor 14. Smoothing capacitors 3 a and 3 b are connected to the bus bar 10 and the bus bar 11. The bus bars 10 and 11 have a positive terminal 10a and a negative terminal 11a, respectively, and the AC conductors 13 and 14 have an AC input terminal 13a and an AC output terminal 14a, respectively.

  As described above, the series switching circuits 21 to 23 are connected in parallel by the bus bar 10 and the bus bar 11, and the series connection part AC is also connected in parallel by the AC conductor 13, and the series switching circuits 24 to 26 are connected in parallel by the bus bar 10 and the bus bar 11. Further, the series connection portion AC is also connected in parallel by the AC conductor 14 to constitute a single semiconductor unit as one bridge. When such a semiconductor unit is applied to three phases, the bus bar 10 and the bus bar 11 of each phase are connected in common to the semiconductor units for three phases, and the parallel connection circuit of the series switching circuits 21 to 23 is connected to the converter 93. The parallel connection circuit of the series switching circuits 24 to 26 is a component for one phase of the inverter 106. The smoothing capacitors 3 a and 3 b are connected in parallel via the bus bar 10 and the bus bar 11 to constitute the smoothing capacitor 104. Furthermore, the terminal 13a of each semiconductor unit is connected to a commercial power source, and each terminal 14a is connected to an AC load, so that the power conversion device of FIG. 21 is configured.

  One bridge as described above is specifically configured as shown in the configuration diagram of the semiconductor unit in FIG. 23 and the exploded perspective view showing the main part of the composite laminate in FIG. In FIG. 23, a semiconductor unit 800 that specifically realizes the circuit of FIG. 22 has a composite laminate 88. As shown in FIGS. 23B and 24, the composite laminate 88 includes four plate-like rectangular insulating plates 12 a to 12 d and bus bars 10 and 11. Further, the AC conductors 13 and 14 having a dimension in the vertical direction in FIG. 23B, that is, in the horizontal direction in FIG. The width of the AC conductors 13 and 14 (the vertical dimension in FIG. 24) is the same as that of the bus bars 10 and 11. And the plate-shaped bus bar 10 is arrange | positioned between the insulating board 12a and the insulating board 12b, and the AC conductors 13 and 14 provide the space | interval in the left-right direction of FIG. 24 between the insulating board 12b and the insulating board 12c, and are the same. The bus bar 11 is arranged between the insulating plate 12c and the insulating plate 12d, and these are stacked and tightened together at four points on the plane by fixing insulating bolts 16. , It is configured integrally. Insulating plates 12a to 12d, bus bars 10 and 11, and AC conductors 13 and 14 are through-holes through which connecting conductors for connecting switching elements 1a to 1f and 2a to 2f and smoothing capacitors 3a and 3b described later pass. Although a formation part etc. are provided, illustration is abbreviate | omitted.

  Then, on the right side in FIG. 23 (b), which is one side of the composite laminate 88, there are positive-side switching elements 1a to 1c and negative-side switching elements 2a to 2c that are mounted on the cooling device 4a and constitute a converter. Is arranged. Similarly, switching elements 1d to 1f and negative-side switching elements 2d to 2f that are attached to the cooling device 4b and constitute an inverter are arranged on the right side of the composite laminate 88. Smoothing capacitors 3a and 3b are arranged between the cooling devices 4a and 4b. Accordingly, the positive side switching elements 1a to 1f are arranged in one row in the vertical direction in FIG. 23A, and the negative side switching elements 2a to 2f are arranged in one row in the vertical direction in FIG. The terminals of the switching elements 1a to 1f and 2a to 2f and the smoothing capacitors 3a and 3b are positioned on substantially the same plane. Although not shown in detail, they are connected by connection conductors as described below.

  The collectors C of the switching elements 1a to 1f on the positive side of the series switching circuits 21 to 26 are connected in common to the bus bar 10 by connection conductors (not shown) penetrating the insulating plates 12b to 12d, the AC conductors 13 and 14 and the bus bar 11 as appropriate. ing. The emitters E of the switching elements 2a to 2f are commonly connected to the bus bar 11 by connection conductors (not shown) penetrating the insulating plate 12d. The emitters E of the switching elements 1a to 1c are commonly connected to the AC conductor 13 by connection conductors (not shown) that penetrate the insulating plates 12c and 12d and the bus bar 11. The emitters E of the switching elements 1d to 1f are commonly connected to the AC conductor 14 by a connection conductor (not shown) that penetrates the insulating plates 12c and 12d and the bus bar 11. The collectors C of the negative side switching elements 2a to 2c are commonly connected to the AC conductor 13 by connection conductors (not shown) penetrating the insulating plates 12c and 12d and the bus bar 11, and the collectors C of the switching elements 2d to 2f are connected to the insulating plates 12c, 12c, 12d and the bus bar 11 are connected to the AC conductor 14 in common by a connection conductor (not shown) penetrating through the bus bar 11. Thereby, both ends of the series switching circuits 21 to 26 are connected to the bus bars 10 and 11, and each series connection portion AC of the series switching circuits 21 to 23 is commonly connected to the AC conductor 13. Each series connection part AC is connected to the AC conductor 14 in common. Further, the positive and negative sides of the smoothing capacitors 3a and 3b are connected to the bus bars 10 and 11, respectively. And the positive electrode side and negative electrode side terminal of the storage battery 105 (FIG. 21) are connected to the bus bars 10 and 11, respectively. The semiconductor unit 800 is configured as described above.

  FIG. 25 shows the power conversion device in which the three semiconductor units 800 shown in FIG. 23 are arranged as the semiconductor units 801 to 803 to configure the three-phase power conversion device (uninterruptible power supply) shown in FIG. It is a top view. The bus bars 10 of the semiconductor units 801 to 803 are connected in common by a connection conductor 811, and the bus bars 11 of the semiconductor units 800 to 803 are connected in common by a connection conductor 812. The AC input terminal 13a of the semiconductor unit 801 is R phase, the AC input terminal 13a of the semiconductor unit 802 is S phase, the AC input terminal 13a of the semiconductor unit 803 is T phase, and the AC output terminal 14a of the semiconductor unit 801 is U phase. When the AC output terminal 14a of the semiconductor unit 802 is V phase and the AC output terminal 14a of the semiconductor unit 803 is W phase, the above-described power conversion device shown in FIG. 21 is formed (for example, Patent Document 1). reference).

JP-A-7-245951

The conventional semiconductor unit is configured as described above. In order to connect a plurality of semiconductor units 800, connection conductors 811 and 812 must be provided, and a space for arranging these connection conductors is required. For this reason, there was a problem that it could not be made compact. In addition, when the three-phase components are integrated, the three-phase components are integrated by the busbars 10 and 11 having an increased width, so that the size and weight are tripled, and the case becomes a housing of the power conversion device. There is a problem that it becomes difficult to handle such as assembly work and replacement work when a component such as an element or a smoothing capacitor fails.
An object of this invention is to obtain the semiconductor unit which can implement | achieve the power converter device which solves the above problems and is easy to handle at the time of work, and the power converter device which is easy to handle at the time of work.

In the semiconductor unit according to the present invention, a semiconductor unit having a multilayer laminate, a switching element group, and a smoothing capacitor,
The multilayer laminate has a plate-like insulating member and a pair of plate-like conductors, and the plate-like conductor has a conductor connecting portion at each end on both sides in a predetermined direction, and the pair of plate-like conductors It is arranged oppositely through the plate-like insulating member,
The switching element group includes a plurality of series open / close circuits in which switching elements are connected in series via a series connection portion.
The smoothing capacitor is connected to the pair of plate conductors,
One end of each of the plurality of series switching circuits is connected to the other of the pair of plate conductors and one of the plate conductors by a connection conductor penetrating the plate-like insulating member, and each other end of the plurality of series switching circuits Is connected to the other of the plate conductors,
The conductor connecting portion is configured such that adjacent ones can be connected when a plurality of the semiconductor units are arranged in the predetermined direction.

  In the power conversion device according to the present invention, three semiconductor units of the present invention are arranged in the predetermined direction, and the conductor connection portions of the adjacent semiconductor units are connected to each other.

Further, in the power conversion device according to the present invention, the semiconductor unit is configured such that the AC input-side conductor is composed of first, second, and third AC input-side conductors, and the AC output-side conductor is the first, second, It is composed of a third AC output side conductor,
The first, second, and third AC input-side conductors and the first, second, and third AC output-side conductors are opposed to the plate-like conductor via the third plate-like insulating member. Integrated into the multilayer laminate,
The plurality of series switching circuits correspond to the first, second, and third AC input side conductors, and the first, second, and third AC input side groups and the first, second, and third AC The output side conductors are divided into first, second, and third AC output side groups, and the first, second, and third AC input side conductors are the first, second, and second, respectively. The switching elements are connected in series via the first, second, and third AC input side conductors so as to be the series connection portions of the series switching circuits belonging to three AC input side groups, , The second and third AC output-side conductors are the first and second switching elements of the series switching circuits belonging to the first, second, and third AC output-side groups, respectively. Are connected in series via the second and third AC output side conductors,
The semiconductor units are arranged in three units in the predetermined direction, and the conductor connection portions of the adjacent semiconductor units are connected to each other.

In the semiconductor unit according to the present invention, a semiconductor unit having a multilayer laminate, a switching element group, and a smoothing capacitor,
The multilayer laminate has a plate-like insulating member and a pair of plate-like conductors, and the plate-like conductor has a conductor connecting portion at each end on both sides in a predetermined direction, and the pair of plate-like conductors It is arranged oppositely through the plate-like insulating member,
The switching element group includes a plurality of series open / close circuits in which switching elements are connected in series via a series connection portion.
The smoothing capacitor is connected to the pair of plate conductors,
One end of each of the plurality of series switching circuits is connected to the other of the pair of plate conductors and one of the plate conductors by a connection conductor penetrating the plate-like insulating member, and each other end of the plurality of series switching circuits Is connected to the other of the plate conductors,
Since the conductor connecting portion is one in which a plurality of the semiconductor units are arranged in the predetermined direction, it is possible to connect adjacent ones,
A semiconductor unit capable of realizing a power conversion device that can be easily handled during work can be obtained.

Further, in the power conversion device according to the present invention, three units of the semiconductor unit of the present invention are arranged side by side in the predetermined direction, and the conductor connection portions of the adjacent semiconductor units are connected to each other.
A power conversion device that can be easily handled during work can be obtained.

In the power converter according to the present invention,
In the semiconductor unit, the AC input side conductor is composed of first, second and third AC input side conductors, and the AC output side conductor is composed of first, second and third AC output side conductors. And
The first, second, and third AC input-side conductors and the first, second, and third AC output-side conductors are opposed to the plate-like conductor via the third plate-like insulating member. Integrated into the multilayer laminate,
The plurality of series switching circuits correspond to the first, second, and third AC input side conductors, and the first, second, and third AC input side groups and the first, second, and third AC The output side conductors are divided into first, second, and third AC output side groups, and the first, second, and third AC input side conductors are the first, second, and second, respectively. The switching elements are connected in series via the first, second, and third AC input side conductors so as to be the series connection portions of the series switching circuits belonging to three AC input side groups, , The second and third AC output-side conductors are the first and second switching elements of the series switching circuits belonging to the first, second, and third AC output-side groups, respectively. Are connected in series via the second and third AC output side conductors,
Since the semiconductor unit is arranged by arranging three units in the predetermined direction, and the conductor connecting portions of the adjacent semiconductor units are connected,
A power conversion device that can be easily handled during work can be obtained.

It is a block diagram of the semiconductor unit which is Embodiment 1 of this invention. It is a disassembled perspective view which shows the principal part of a composite laminated body. It is sectional drawing which shows the connection part of a semiconductor unit. It is a top view of the power converter device which has arrange | positioned the semiconductor unit to the three-phase structure. It is principal part sectional drawing which shows the principal part of FIG. It is a perspective view which shows the principal part of the modification of the composite laminated body of FIG. It is a circuit diagram of the semiconductor unit of FIG. It is a block diagram of the semiconductor unit which is Embodiment 2 of this invention. It is a top view of an alternating current conductor. It is a top view of the power converter device which has arrange | positioned the semiconductor unit to the three-phase structure. It is a block diagram which shows the modification of the semiconductor unit of FIG. It is a circuit diagram of the semiconductor unit of FIG. It is a block diagram of the semiconductor unit which is Embodiment 3 of this invention. It is a top view of the power converter device which has arrange | positioned the semiconductor unit to the three-phase structure. It is a perspective view of a semiconductor module. It is a circuit diagram for one bridge of a power converter. It is a block diagram of the semiconductor unit which is Embodiment 4 of this invention. It is a top view of the power converter device which has arrange | positioned the semiconductor unit to the three-phase structure. It is a block diagram of the semiconductor unit which is Embodiment 5 of this invention. It is a top view of the power converter device which has arrange | positioned the semiconductor unit to the three-phase structure. It is a circuit diagram which shows the structure of the uninterruptible power supply device which is a kind of power converter device. It is a circuit diagram of one bridge (for 1 phase) of a power converter. It is a block diagram of the conventional semiconductor unit. It is a disassembled perspective view which shows the principal part of the conventional composite laminated body. It is a top view of the conventional power converter device. It is a top view of another power converter device.

Embodiment 1 FIG.
1 to 7 show Embodiment 1 for carrying out the present invention. FIG. 1 shows a configuration of a semiconductor unit. FIG. 1A is a plan view and FIG. ) Is a side view, FIG. 1 (c) is a cross-sectional view of the main part of the cut surface AA in FIG. 1 (a), FIG. 2 is an exploded perspective view showing the main part of the composite laminate, and FIG. 4 is a plan view of a power conversion device in which semiconductor units are arranged in a three-phase configuration, FIG. 5 is a cross-sectional view of the main part showing the main part of FIG. 4, and FIG. 6 is the composite laminate of FIG. The perspective view which shows the principal part of a modification, FIG. 7 is a circuit diagram of the semiconductor unit of FIG. FIG. 7 is a circuit diagram of one bridge of the above-described power conversion device of FIG. 21, and one bridge shown here is assembled as the semiconductor unit 100 in FIG. 1. In FIG. 7, the semiconductor unit 100 includes series switching circuits 21 to 26. The series switching circuit 21 is formed by connecting the emitter E of the positive-side switching element 1a, which is a transistor, and the collector C of the negative-side switching element 2a through a series connection portion AC. Similarly, each of the series switching circuits 22 to 26 is configured such that the emitters E of the switching elements 1b to 1f on the positive side and the collectors C of the switching elements 2b to 2f are connected to each other through the series connection portion AC. . The collectors C of the positive-side switching elements 1a to 1f of the series switching circuits 21 to 26 are connected in common to the positive-side bus bar 17, and the emitters E of the negative-side switching elements 2a to 2f are connected to the negative-side bus bar 18. Commonly connected.

  Each series connection part AC of each series switching circuit 21-23 is connected in common to the AC conductor 13, and each series connection part AC of each series switching circuit 24-26 is connected in common to the AC conductor 14. Further, the smoothing capacitors 3 a and 3 b are connected to the bus bar 17 and the bus bar 18. The AC conductors 13 and 14 each have a plate-like rectangular AC input terminal 13a and AC output terminal 14a. Each of the bus bars 17 and 18 has two plate-like terminals 17a and 17b on the positive electrode side (also see FIGS. 1 and 2 described later) and terminals 18a and 18b on the negative electrode side. As described above, the series switching circuits 21 to 23 are connected in parallel by the bus bar 17 and the bus bar 18, and the series connection part AC is also connected in parallel by the AC conductor 13, and the series switching circuits 24 to 26 are connected in parallel by the bus bar 17 and the bus bar 18. Further, the series connection portion AC is also connected in parallel by the AC conductor 14. The circuit of the semiconductor unit 100 is configured as described above.

  Now, the semiconductor unit 100 as described above is specifically formed as shown in FIGS. In FIG. 1, the semiconductor unit 100 has a composite laminate 81. As shown in FIG. 1B and FIG. 2, the composite laminate 81 is a rectangular plate that is smaller than the four rectangular insulating plates 12 a to 12 d and the insulating plates 12 a to 12 d. Bus bars 17 and 18 as conductors are provided. The positive side bus bar 17 and the negative side bus bar 18 each have two plate-like positive side terminals 17a and 17b and negative side terminals 18a and 18b. The bus bar 18 has a through-hole forming portion 18g (FIG. 3) that forms a through-hole that is larger than the diameter of the conductor collar 19 as a connecting conductor by a size necessary for insulation. The through-hole forming portion 18g The conductor collar 19 penetrates through. The AC conductor 13 has a through-hole forming portion 13g that forms a through-hole that is larger than the diameter of the conductor collar 19 by a size necessary for insulation, and the conductor collar 19 passes through the through-hole forming portion 13g. The insulating plates 12b to 12d similarly have through-hole forming portions, but the reference numerals are omitted in FIG.

  1B has plate-like AC conductors 13 and 14 whose dimensions in the vertical direction in FIG. 1B, that is, in the left-right direction in FIG. The AC conductors 13 and 14 each have a plate-like AC input terminal 13a and an AC output terminal 14a. The width of the AC conductors 13 and 14 (the dimension in the depth direction in FIG. 2) is the same as that of the bus bars 17 and 18. A bus bar 17 is disposed between the insulating plate 12a and the insulating plate 12b, and the AC conductors 13 and 14 are provided on the same plane with a predetermined interval in the left-right direction in FIG. 2 between the insulating plate 12b and the insulating plate 12c. The bus bar 18 is arranged between the insulating plate 12c and the insulating plate 12d, and these are stacked and tightened together at four points on the plane by the fixing insulating bolts 16. Yes. Insulating plates 12a to 12d, bus bars 17 and 18, and AC conductors 13 and 14 are through-holes through which connecting conductors for connecting switching elements 1a to 1f and 2a to 2f and smoothing capacitors 3a and 3b described later pass. Although the formation part is provided, illustration is abbreviate | omitted in FIG.

  The AC conductors 13 and 14, the bus bars 17 and 18, the AC input terminal 13a, the AC output terminal 14a, and the thicknesses of the terminals 17a, 17b, 18a, and 18b are the same. One (left) terminal 17a on the positive electrode side is provided lower than the bus bar 17 by the plate thickness of the terminal 17a, unlike the bus bar 17, as shown in FIG. The other (right) terminal 17b on the positive electrode side is provided so as to be on the same plane as the bus bar 17 as shown in FIG. One terminal 18a on the negative electrode side is provided flush with the bus bar 18 as shown in FIG. The other (right) terminal 18b on the negative electrode side is provided so as to be higher than the bus bar 18 by the plate thickness of the terminal 18b, unlike the bus bar 18, as shown in FIG.

  Then, on the right side in FIG. 1B, which is one side of the composite laminate 81, there are positive-side switching elements 1a to 1c and negative-side switching elements 2a to 2c that are mounted on the cooling device 4a and constitute a converter. Has been placed. Similarly, switching elements 1d to 1f and negative-side switching elements 2d to 2f that are attached to the cooling device 4b and constitute an inverter are arranged on the right side of the composite laminate 81. Smoothing capacitors 3a and 3b are arranged between the cooling devices 4a and 4b. Thereby, the switching elements 1a to 1f on the positive side are arranged in one row in the vertical direction in FIG. 1A, and the switching elements 2a to 2f on the negative side are arranged in one row in the vertical direction in FIG. The terminals of the switching elements 1a to 1f and 2a to 2f and the smoothing capacitors 3a and 3b are arranged on substantially the same plane. Although not shown in detail, they are connected by connection conductors as described below.

  The collector C of the switching elements 1a to 1f on the positive side of the series open / close circuits 21 to 26 is connected to the bus bars by connection conductors (not shown) penetrating the insulating plates 12b to 12d, the AC conductors 13 and 14 and the bus bar 18 as appropriate in the through hole forming portions. 17 is connected in common. Here, conductor collars 19 welded to the bus bars 17 are provided at positions corresponding to the terminals of the positive-side switching elements 1a to 1f and the smoothing capacitors 3a and 3b, respectively, as shown in FIG. . In particular, FIG. 3 shows a case where the collector C of the switching elements 1a to 1f on the positive side and the positive side of the smoothing capacitors 3a and 3b are connected to each other via the bus bar 17. The conductor collar 19 is provided so as to penetrate the through-hole forming portion 18g and the insulating plates 12b to 12d, and is insulated from the bus bar 18. Then, the bus bar 17 and the collector C of the switching element 1a are connected by fastening the conductor collar 19 to the collector C of the switching element 1a, for example, by the terminal connection bolt 15. The conductor collar 19 and the terminal connection bolt 15 constitute the connection conductor of the present invention, and the connection conductor described below has the same configuration. Further, the emitters E of the switching elements 2a to 2f are commonly connected to the bus bar 18 by a connection conductor (not shown) that penetrates the insulating plate 12d in the through hole forming portion.

  In FIG. 1, the emitters E of the switching elements 1 a to 1 c are commonly connected to the AC conductor 13 by a connection conductor (not shown) that penetrates the insulating plates 12 c and 12 d and the bus bar 18 at the through hole forming portion. . The emitters E of the switching elements 1d to 1f are commonly connected to the AC conductor 14 by a connection conductor (not shown) that penetrates the insulating plates 12c and 12d and the bus bar 18 at the through hole forming portion. The collector C of the switching elements 2a to 2c on the negative electrode side is connected in common to the AC conductor 13 by a connection conductor (not shown) that penetrates the insulating plates 12c and 12d and the bus bar 18 in the through hole forming portion, and the collector of the switching elements 2d to 2f C is commonly connected to the AC conductor 14 by a connection conductor (not shown) penetrating the insulating plates 12c and 12d and the bus bar 18 at the through hole forming portion.

Thereby, both ends of the series switching circuits 21 to 26 are connected to the bus bars 17 and 18, and each series connection portion AC of the series switching circuits 21 to 23 is commonly connected to the AC conductor 13, so that the series switching circuits 24 to 26 of the series switching circuits 24 to 26 are connected. Each series connection part AC is connected to the AC conductor 14 in common. Further, the positive and negative sides of the smoothing capacitors 3a and 3b are connected to the bus bars 17 and 18, respectively. Although not shown, terminals 17a and 18a are connected to bus bars 17 and 18, respectively, and a positive electrode side terminal and a negative electrode side terminal of storage battery 105 (FIG. 21). The composite laminate 81 is configured as described above.
The switching elements 1a to 1f and 2a to 2f are the switching element group in the present invention, the AC conductors 13 and 14 are the AC connection conductor and the first and second AC conductors, and the bus bars 17 and 18 are a pair of plates. The terminals 17a, 17b, 18a, and 18b are conductor connection portions. If the insulating plate 12b is the plate-like insulating member of the present invention, the insulating plate 12c is the second plate-like insulating member, and if the insulating plate 12c is the plate-like insulating member of the present invention, the insulating plate Reference numeral 12b denotes a second plate-like insulating member. The series switching circuits 21 to 26 are divided into series switching circuits 21 to 23 as a first group and series switching circuits 24 to 26 as a second group.
Further, in the above description, the AC conductors 13 and 14 are opposed to the bus bar 18 via the insulating plate 12c and are opposed to the bus bar 17 via the insulating plate 12b. For example, as shown in FIG. The composite laminated body 181 can be configured by switching the positions of the AC conductors 13 and 14 and the position of the bus bar 17 and laminating the AC conductors 13 and 14, the insulating plate 12 b, the bus bar 17, and the insulating plate 12 c in this order. In this case, the insulating plate 12c is the plate-like insulating member of the present invention, and the insulating plate 12b is the second plate-like insulating member. Further, the position of the AC conductors 13 and 14 and the position of the bus bar 18 in FIG. 2 may be interchanged. In any case, the outermost insulating plates 12a and 12d may be provided as necessary and are not indispensable.

  FIG. 4 shows the three-phase power conversion device (uninterruptible power supply device) shown in FIG. 21 by arranging three semiconductor units 100 of FIG. 1 as semiconductor units 101 to 103. Each semiconductor unit 101-103 is switched so that adjacent terminals 17a and 17b overlap in the vertical direction of FIG. 5 and adjacent terminals 18a and 18b overlap in the vertical direction of FIG. The terminals 17b of the semiconductor unit 101 and the terminals 17a of the semiconductor unit 102, the terminals 17b of the semiconductor unit 101, and the terminals 18b of the semiconductor unit 101 and the semiconductor units 102, which are arranged side by side in a direction intersecting the arrangement direction of the elements 1a to 1f and 2a to 2f, The terminal 18a, the terminal 17b of the semiconductor unit 102 and the terminal 17a of the semiconductor unit 103, and the terminal 18b of the semiconductor unit 102 and the terminal 18a of the semiconductor unit 103 are fastened with bolts (not shown) and connected. For example, an external storage battery 105 shown in FIG. 21 is connected to the terminals 17a and 18a of the semiconductor unit 101. The AC input terminal 13a of the semiconductor unit 101 is an R phase, the AC input terminal 13a of the semiconductor unit 102 is an S phase, and the AC input terminal 13a of the semiconductor unit 103 is a T phase AC input terminal. The terminal 14a is a U-phase, the AC output terminal 14a of the semiconductor unit 102 is a V-phase, and the AC output terminal 14a of the semiconductor unit 103 is a W-phase AC output terminal, thereby forming a power converter.

  According to this embodiment, since the semiconductor unit 100 is configured as described above, a power conversion device having an arbitrary number of phases such as a three-phase or a single phase is configured with the same size and weight of one semiconductor unit. In addition, the semiconductor unit can be handled as a single unit when the power conversion device is assembled or removed in the event of a failure, so that it is easy to handle. Further, when a certain semiconductor unit fails, the semiconductor unit can be easily replaced. Further, by connecting the bus bars 17 and 18 adjacent to each other, an increase in wiring inductance of the bus bars 17 and 18 can be prevented.

  FIG. 26 is a plan view of another power converter. As shown in FIG. 26, the dimensions of the bus bars 10 and 11 on the positive electrode side and the negative electrode side in the semiconductor unit in FIG. If bus bars 910 and 911 are provided, and series switching circuits 21 to 26 are arranged in the left-right direction for three phases and connected to bus bars 910 and 911, three-phase components are integrated via bus bars 910 and 911. The power conversion device can be configured compactly. However, since the three-phase portion is integrated by the busbars 10 and 11 having a wider width, the size and weight are tripled, and the work for assembling the power converter into the housing, elements, smoothing capacitors, etc. There arises a problem that it becomes difficult to handle such as replacement work at the time of a component failure. According to this embodiment, such a problem can be solved.

Embodiment 2. FIG.
8 to 12 show the second embodiment. FIG. 8 shows the structure of the semiconductor unit. FIG. 8A is a plan view, FIG. 8B is a side view, and FIG. Is a plan view of an AC conductor, FIG. 10 is a plan view of a power conversion device in which semiconductor units are arranged in a three-phase configuration, FIG. 11 is a configuration diagram showing a modification of the semiconductor unit of FIG. 8, and FIG. FIG. In FIG. 8, a semiconductor unit 200 is obtained by assembling the three-phase power conversion device of the circuit shown in FIG. 12 as one semiconductor unit. A large-capacity power conversion device is realized by connecting three such semiconductor units 200 in parallel (details will be described later). In FIG. 8, the semiconductor unit 200 has a composite laminate 82. The composite laminate 82 has plate-like rectangular AC conductors 31 to 36 (see FIG. 9), and the AC conductors 31 to 33 are insulated instead of the AC conductor 13 of FIGS. 1 and 2 in the first embodiment. Between the plate 12b and the insulating plate 12c, the switching elements 1a to 1c are arranged at intervals in the arrangement direction of the switching elements 1a to 1c, and the AC conductors 34 to 36 are replaced with the AC conductor 14 of FIGS. Between the insulating plate 12b and the insulating plate 12c, the switching elements 1d to 1f are arranged at intervals in the arrangement direction of the switching elements 1d to 1f.

The AC conductors 31 to 36 have the same width and thickness in the left-right direction in FIG. 8A as the AC conductors 13 and 14 in FIG. 1, but the vertical dimensions are the same as the dimensions of the AC conductors 13 and 14. The size is obtained by subtracting the distance required for insulation from 1/3. The AC conductors 31 to 33 have AC input terminals 31a to 33a and 31b to 33b as AC input side conductor connection portions. The AC input terminals 31a to 33a are rectangular in the same shape, and are lowered below the AC conductors 31 to 33 by the plate thickness of the corresponding terminals on the left side of the AC conductors 31 to 33 in FIGS. 8A and 9. Is provided. The AC input terminals 31b to 33b are rectangular with the same size as the AC input terminal 31a, and are provided flush with the AC conductors 31 to 33 on the right side of the AC conductors 31 to 33 in FIGS. 8A and 9. . The AC conductors 34 to 36 have AC output terminals 34a to 36a and 34b to 36b as AC output side conductor connection portions. The AC output terminals 34a to 36a are rectangular with the same size as the AC input terminal 31a, and are provided flush with the AC conductors 34 to 36 on the left side of the AC conductors 34 to 36 in FIGS. . The AC output terminals 34b to 36b are rectangles having the same size as the AC input terminal 31a, and the AC conductors 34 to 36 are different in thickness to the right side of the AC conductors 34 to 36 in FIGS. It is provided so as to be raised upward. Since other configurations are the same as those of the first embodiment shown in FIGS. 1 to 7, the same reference numerals are given to the corresponding components and the description thereof is omitted.
The AC conductors 31 to 33 are the first to third AC input side conductors in this invention, and the AC conductors 34 to 36 are the first to third AC output side conductors. If the insulating plate 12b is the plate-like insulating member of the present invention, the insulating plate 12c is the second plate-like insulating member, and if the insulating plate 12c is the plate-like insulating member of the present invention, the insulating plate Reference numeral 12b denotes a second plate-like insulating member. Further, the series switching circuits 21 to 26 are divided into series switching circuits 21 to 23 as first to third AC input side groups and series switching circuits 24 to 26 as first to third AC output side groups. It has been.
Further, in the above description, the AC conductors 31 to 36 face the bus bar 18 via the insulating plate 12c and face the bus bar 17 via the insulating plate 12b. For example, as shown in FIG. The composite laminated body 182 can be configured by switching the positions of the conductors 31 to 36 and the position of the bus bar 17 and laminating the AC conductors 31 to 36, the insulating plate 12b, the bus bar 17, and the insulating plate 12c in this order. In this case, the insulating plate 12c is a plate-like insulating member in the present invention, and the insulating plate 12b is a second plate-like insulating member. Further, the position of the AC conductors 31 to 36 and the position of the bus bar 18 in FIG. In any case, the outermost insulating plates 12a and 12d may be provided as necessary and are not indispensable.

  In FIG. 8, switching elements 1a to 1f, switching elements 2a to 2f and smoothing capacitors 3a and 3b are arranged on the right side of the composite laminate 82. The emitters E of the switching elements 1a to 1c are individually connected to the AC conductors 31 to 33 by connection conductors (not shown) penetrating the insulating plates 12c and 12d and the bus bar 18 at the through hole forming portions. The emitters E of the switching elements 1d to 1f are individually connected to the AC conductors 34 to 36 by connection conductors (not shown) penetrating the insulating plates 12c and 12d and the bus bar 18 at the through hole forming portions. The collectors C of the switching elements 2a to 2c are individually connected to the AC conductors 31 to 33 by connection conductors (not shown) penetrating the insulating plates 12c and 12d and the bus bar 18 at the through hole forming portions.

  The collectors C of the switching elements 2d to 2f are individually connected to the AC conductors 34 to 36 by connection conductors (not shown) that penetrate the insulating plates 12c and 12d and the bus bar 18 at the through hole forming portions. Thereby, both ends of the series switching circuits 21 to 23 are connected to the bus bars 17 and 18, the series connection parts AC of the series switching circuits 21 to 23 are connected to the AC conductors 31 to 33, and the series switching circuits 24 to 26. Each series connection portion AC is individually connected to the AC conductors 34 to 36. Then, the terminals 17a and 18a are connected to the bus bars 17 and 18 to the positive electrode side and the negative electrode side terminal of the storage battery 105 (FIG. 21), respectively. Since other configurations are the same as those of the first embodiment shown in FIG. 1, the same reference numerals are given to the corresponding components and the description thereof is omitted. The semiconductor unit 200 is configured as described above.

  FIG. 10 shows a high-power power converter configured by arranging the three semiconductor units 200 of FIG. 8 as semiconductor units 201 to 203 and connecting the power converters shown in FIG. 12 in parallel for three circuits. FIG. The semiconductor units 201 to 203 are arranged side by side in the left-right direction in FIG. 10, that is, in the direction intersecting with the arrangement direction of the switching elements 1a to 1f and 2a to 2f. The AC input terminals 31 b to 33 b of the semiconductor unit 201, the terminal 17 b of the positive bus bar 17, the terminal 18 b of the negative bus bar 18, and the AC output terminals 34 b to 36 b are the AC input terminals 31 a to 31 b of the adjacent semiconductor unit 202. 33a, the terminal 17a of the bus bar 17 on the positive electrode side, the terminal 18a of the bus bar 18 on the negative electrode side, and the AC output terminals 34a to 36a are arranged so as to overlap each other in the direction perpendicular to the paper surface of FIG. Tightened and connected. The same applies to the connection between the semiconductor unit 202 and the semiconductor unit 203. For example, the AC input terminals 31a, 32a, and 33a of the semiconductor unit 201 are connected to R-phase, S-phase, and T-phase AC power supplies, respectively, and the AC output terminals 34b, 35b, and 36b of the semiconductor unit 203 are respectively U-phase and V-phase. Phase and W phase AC output terminals.

  According to this embodiment, since the semiconductor unit 200 is configured as described above, it is possible to configure a power conversion device having an arbitrary parallel number, that is, a capacity while keeping the same size and weight of one semiconductor unit. In this embodiment, it is possible to configure a three-phase power conversion device having three parallel outputs and a three times larger output capacity. And since the semiconductor unit 200 can be handled by itself when assembling the power conversion device or removing it at the time of failure, the handling is easy. Further, when a certain semiconductor unit fails, the semiconductor unit can be easily replaced. Further, by connecting the bus bars 17 and 18 adjacent to each other, an increase in wiring inductance of the bus bars 17 and 18 can be prevented. The output capacity of the three-phase power converter can be easily increased while the size and weight of one semiconductor unit remains the same.

  In the second embodiment, the case where the semiconductor unit 200 has three phases is shown. However, the present invention is not limited to this, and the same effect can be obtained when the semiconductor unit is single phase or the like.

Embodiment 3 FIG.
13 to 16 show the third embodiment. FIG. 13 shows the configuration of the semiconductor unit. FIG. 13A is a plan view, FIG. 13B is a side view, and FIG. FIG. 15 is a plan view of a power conversion device in which semiconductor units are arranged in a three-phase configuration, FIG. 15 is a perspective view of a semiconductor module, and FIG. 16 is a circuit diagram for one bridge of the power conversion device. In FIG. 13, a semiconductor unit 300 is obtained by assembling one bridge shown in FIG. 16 as one semiconductor unit. A three-phase power converter is realized by connecting three such semiconductor units 300 (details will be described later). In FIG. 13, the semiconductor unit 300 has a composite laminate 83 as a multilayer laminate. The composite laminate 83 includes rectangular insulating plates 39a to 39c having the same size and thickness, and rectangular plate-like bus bars 40 and 41 that are smaller in size in the vertical and horizontal directions than the insulating plates 39a to 39c. The insulating plate 39a, the bus bar 40, the insulating plate 39b, the bus bar 41, and the insulating plate 39c are laminated and integrated in this order.

  The positive-side bus bar 40 has plate-like rectangular positive-side terminals 40a and 40b on both sides in the left-right direction in FIG. 13, and the negative-side bus bar 41 has terminals 40a and 40b on both sides in the left-right direction in FIG. Negative-side terminals 41a and 41b having the same dimensions as those shown in FIG. The bus bars 40, 41 and the terminals 40a, 40b, 41a, 41b have the same plate thickness. One terminal 40a on the positive electrode side (left side) is provided lower than the bus bar 40 by the plate thickness of the terminal 40a, unlike the bus bar 40, similarly to the terminal 17a shown in FIG. . The other (right) terminal 40b on the positive electrode side is provided flush with the bus bar 40 in the same manner as the terminal 17b shown in FIG. One terminal 41a on the negative electrode side is provided flush with the bus bar 41 in the same manner as the terminal 18a shown in FIG. Similarly to the terminal 18a shown in FIG. 1C, the other (right) terminal 41b on the negative electrode side is provided so as to be higher than the bus bar 41 by the plate thickness of the terminal 41b, which is different from the bus bar 41. . The rectangular plate-like AC conductors 42 and 43 have an AC input terminal portion 42a and an AC output terminal portion 43a at the center of each end. The bus bars 40 and 41 are a pair of plate conductors in the present invention, the AC conductors 42 and 43 are AC connection conductors and first and second AC conductors, and the terminals 40a, 40b, 41a and 41b are conductor connections. Part.

  In this embodiment, the semiconductor modules 61 to 66 as series switching circuits are provided. The semiconductor module 61 has a switching element 1a on the positive electrode side, a switching element 2a on the negative electrode side, and terminals T1, T2 and T3 which are first, second and third terminals, and these are integrally molded with resin. It is a semiconductor module. The emitter E of the switching element 1a and the collector C of the switching element 2a are connected by a series connection part AC to form a series switching circuit and connected to the terminal T3, and the collector C of the switching element 1a is connected to the terminal T1. The emitter E of the switching element 2a is connected to the terminal T2. Similarly, each of the semiconductor modules 62 to 66 has positive-side switching elements 1b to 1f, negative-side switching elements 2b to 2f, and terminals T1, T2, and T3, which are integrally molded with resin. It has been done. The emitters E of the switching elements 1b to 1f and the collectors C of the switching elements 2b to 2f are respectively connected at the series connection portion AC and connected to the terminal T3, and the collectors C of the switching elements 1b to 1f are connected to the terminal T1. The emitters E of the switching elements 2b to 2f are connected to the terminal T2.

  In FIG. 13B, the semiconductor modules 61 to 66 as described above are arranged on the right side of the composite laminate 83. The terminals T1 of the semiconductor modules 61 to 66 are commonly connected to the bus bar 40 by connection conductors (not shown) that penetrate the insulating plates 39b and 39c and the bus bar 41 at the through hole forming portion. Each terminal T2 of the semiconductor modules 61 to 66 is commonly connected to the bus bar 41 by a connection conductor (not shown) that penetrates the insulating plate 39c in the through hole forming portion. Each terminal T3 of the semiconductor modules 61 to 63 is connected to the AC conductor 42 in common, and each terminal T3 of the semiconductor modules 64 to 66 is connected to the AC conductor 43 in common. Further, the smoothing capacitors 3 a and 3 b are connected to the bus bar 40 and the bus bar 41. Since other configurations are the same as those of the first embodiment shown in FIGS. 1 to 7, the same reference numerals are given to the corresponding components and the description thereof is omitted. And although not shown in figure, the positive electrode side and negative electrode side terminal of the storage battery 105 (FIG. 21) are connected to the terminals 40a and 41a of the bus bars 40 and 41, respectively. As a result, both end portions of the semiconductor modules 61 to 63 are connected to the bus bars 40 and 41, and each series connection portion AC of the semiconductor modules 61 to 63 is commonly connected to the AC conductor 42 via the terminal T3. The 66 serial connection portions AC are commonly connected to the AC conductor 43 via the terminal T3. Further, the positive and negative sides of the smoothing capacitors 3a and 3b are connected to the bus bars 40 and 41, respectively. The semiconductor unit 300 is configured as described above. The bus bars 40 and 41 are a pair of plate conductors in the present invention, the terminals 40a, 40b, 41a and 41b are conductor connection portions, and the AC conductors 42 and 43 are AC connection conductors.

  FIG. 14 shows the three-phase power conversion apparatus shown in FIG. 21 by arranging three semiconductor units 300 of FIG. 13 as semiconductor units 301 to 303. Each semiconductor unit 301-303 is configured so that adjacent terminals 40a and 40b overlap in the vertical direction of FIG. 5 and adjacent terminals 41a and 41b overlap in the vertical direction of FIG. The terminals 40b and 40a, and the terminals 41b and 41a, which are arranged side by side in the arrangement direction of the modules 61 to 66 and overlap each other, are fastened with bolts (not shown) and connected. Note that an external storage battery 105 shown in FIG. 21, for example, is connected to the terminals 40a and 41a of the semiconductor unit 301. The AC input terminal portion 42a of the semiconductor unit 301 is an R phase, the AC input terminal portion 42a of the semiconductor unit 302 is an S phase, and the AC input terminal portion 42a of the semiconductor unit 303 is a T phase AC input terminal. The AC output terminal 43a is a U-phase, the AC output terminal 43a of the semiconductor unit 302 is a V-phase, and the AC output terminal 43a of the semiconductor unit 303 is a W-phase AC output terminal. Has been.

  According to this embodiment, since the semiconductor unit 300 is configured as described above, the size and weight of a semiconductor unit having a modularized semiconductor module in which switching elements are connected in series remain the same, and the three-phase or single phase is maintained. A power conversion device having an arbitrary number of phases such as phases can be configured, and since the power conversion device can be handled as a single unit even when the power conversion device is assembled or removed in the event of a failure, handling is easy. Further, when a certain semiconductor unit fails, the semiconductor unit can be easily replaced. Further, by connecting the bus bars 40 and 41 adjacent to each other, an increase in wiring inductance of the bus bars 40 and 41 can be prevented.

Embodiment 4 FIG.
17 and 18 show the fourth embodiment. FIG. 17 shows the structure of the semiconductor unit. FIG. 17A is a plan view, FIG. 17B is a side view, and FIG. FIG. 3 is a plan view of a power conversion device in which semiconductor units are arranged in a three-phase configuration. In FIG. 17, a composite laminate 84 as a multilayer laminate has bus bars 50 and 51. The bus bars 50 and 51 are the same as the bus bars 40 and 41 shown in FIG. 13 of the third embodiment, but on the left side of the bus bar 50 in FIG. 50c is disposed at a predetermined interval in the vertical direction, and plate-like rectangular terminals 50b and 50d on the positive electrode side are disposed on the right side of the bus bar 50 at a predetermined interval in the vertical direction. In addition, plate-shaped rectangular terminals 51a and 51c on the negative electrode side are arranged on the left side of the bus bar 51 in FIG. 17A so as to be alternately positioned with the terminals 50a and 50c, and the negative electrode side is on the right side of the bus bar 51. The plate-like rectangular terminals 51b and 51d are arranged alternately with the terminals 50b and 50d. The left terminals 50a, 51a, 50c, 51c are arranged at regular intervals with a constant interval when the composite laminate 84 is viewed from a direction perpendicular to the paper surface of FIG. The right terminals 50b, 51b, 50d, 51d are arranged at regular intervals with a constant interval when the composite laminate 84 is viewed from a direction perpendicular to the paper surface of FIG.

  The bus bars 50 and 51 and the terminals 50a to 50d and 51a to 51d have the same plate thickness. The terminals 50a, 50c, 51a, 51c on the one (left side) are provided lower than the bus bar 50 or the bus bar 51 by the thickness of the terminal, similarly to the terminal 17a shown in FIG. . The other (right) terminals 50b, 50d, 51b, 51d are provided flush with the bus bar 50 or the bus bar 51 in the same manner as the terminal 17b shown in FIG. The insulating plate 39a, bus bar 50, insulating plate 39b, bus bar 51, and insulating plate 39c are laminated and integrated in this order. Since other configurations are the same as those of the third embodiment shown in FIG. 13, the corresponding components are denoted by the same reference numerals and description thereof is omitted. The semiconductor unit 400 is configured as described above. The bus bars 50 and 51 are a pair of plate conductors in the present invention, and the terminals 50a to 50d and 51a to 51d are conductor connection portions.

  FIG. 18 shows a configuration of the three-phase power conversion device shown in FIG. 21 by arranging three semiconductor units 400 of FIG. 17 as semiconductor units 401 to 403. The respective semiconductor units 401 to 403 are arranged so that the adjacent terminals 50b and 50a, terminals 51b and 51a, terminals 50d and 50c, and terminals 51d and 51c overlap each other when viewed from a direction perpendicular to the paper surface of FIG. The semiconductor modules 61 to 66 are arranged side by side in a direction intersecting with the arrangement direction of the semiconductor modules 61 to 66, and terminals that are adjacent to each other and are overlapped with each other are tightened and connected with a bolt (not shown). For example, an external storage battery 105 shown in FIG. 21 is connected to the terminals 50a and 51a of the semiconductor unit 401. The AC input terminal portion 42a of the semiconductor unit 401 is an R phase, the AC input terminal portion 42a of the semiconductor unit 402 is an S phase, and the AC input terminal portion 42a of the semiconductor unit 403 is an T phase AC input terminal. The AC output terminal 43a is a U-phase, the AC output terminal 43a of the semiconductor unit 402 is a V-phase, and the AC output terminal 43a of the semiconductor unit 403 is a W-phase AC output terminal. Has been.

  The current flowing between the bus bars 50 on the positive side of the semiconductor units 401 to 403 is the first terminal on the positive side of the terminal 50b of the semiconductor unit 401, the terminal 50a of the semiconductor unit 402, the terminal 50b of the semiconductor unit 402, and the terminal 50a of the semiconductor unit 403. And the second current path on the positive electrode side of the terminal 50d of the semiconductor unit 402, the terminal 50d of the semiconductor unit 402, and the terminal 50c of the semiconductor unit 403. In addition, the current flowing between the bus bars 51 on the negative side of each of the semiconductor units 401 to 403 is on the negative side of the terminal 51b of the semiconductor unit 401, the terminal 51a of the semiconductor unit 402, the terminal 51b of the semiconductor unit 402, and the terminal 51a of the semiconductor unit 403. In addition to passing through the first current path, it passes through the terminal 51d of the semiconductor unit 401, the terminal 51c of the semiconductor unit 402, the terminal 51d of the semiconductor unit 402, and the second current path on the negative side of the terminal 51c of the semiconductor unit 403.

  Since the first current path on the positive electrode side, the first current path on the negative electrode side, the second current path on the positive electrode side, and the second current path on the negative electrode side are alternately formed and the current flows in the opposite direction, Wiring inductance between the terminals can be reduced, and the number of terminals is twice that of the terminals 40a, 40b, 41a, 41b in the semiconductor unit 300 shown in FIG. Since the current flowing through the bus bars 50 and 51 on the positive electrode side and the negative electrode side flows separately in the first and second current paths on the positive electrode side and the negative electrode side, respectively, the wiring inductance can be further reduced. Here, an example in which two sets of the first current path on the positive electrode side and the negative electrode side and the second current path on the positive electrode side and the negative electrode side are provided is shown, but three or more sets may be provided. Similarly, in the semiconductor units shown in FIGS. 1, 7, and 11, two or more sets of positive-side terminals and negative-side terminals as conductor connection portions are provided at intervals on each attachment side, and between the semiconductor units. It is also possible to reduce the wiring inductance.

  According to the power conversion device in this embodiment, when a plurality of semiconductor units are connected, the wiring inductance at the terminal portion connecting the bus bars 50 and 51 can be reduced.

Embodiment 5 FIG.
19 and 20 show the fifth embodiment. FIG. 19 shows the configuration of the semiconductor unit. FIG. 19A is a plan view, FIG. 19B is a side view, and FIG. FIG. 3 is a plan view of a power conversion device in which semiconductor units are arranged in a three-phase configuration. In FIG. 19, a semiconductor unit 500 is obtained by assembling the three-phase power converter shown in the circuit diagram of FIG. 12 as one semiconductor unit. And by connecting three such semiconductor units 500 in parallel, a large-capacity three-phase power conversion device is realized (details will be described later). 19, the semiconductor unit 500 removes the AC conductors 42 and 43 from the semiconductor unit 300 shown in FIG. 13, and uses the terminals T3 of the semiconductor modules 61 to 63 as AC input terminals. The terminal T3 is an AC output terminal. Since other configurations are the same as those of the third embodiment shown in FIG. 13, the corresponding components are denoted by the same reference numerals and description thereof is omitted. The semiconductor unit 500 is configured as described above.

  20 includes three semiconductor units 500 of FIG. 19 arranged as semiconductor units 501 to 503, and the power converter shown in FIG. It is a top view which shows a power converter device. The semiconductor units 501 to 503 are arranged side by side in the arrangement direction of the semiconductor modules 61 to 63. Each of the semiconductor units 501 to 503 is configured so that the adjacent terminals 40a and 40b overlap in the vertical direction in FIG. 5 and the adjacent terminals 41a and 41b overlap in the vertical direction in FIG. The terminals 40b and 40a and the terminals 41b and 41a, which are arranged side by side in the arrangement direction of the modules 61 to 63 and overlap each other, are fastened and connected with bolts (not shown). For example, an external storage battery 105 shown in FIG. 21 is connected to the terminals 40a and 41a of the semiconductor unit 501. Further, the terminals T3 of the semiconductor modules 61 to 63 of the semiconductor units 501 to 503 are connected in common by connection lines 511 to 513, and are used as R, S, and T phase AC input terminals, respectively. Further, the terminals T3 of the semiconductor modules 64 to 66 of the semiconductor units 501 to 503 are connected in common by connection lines 514 to 516, and are used as U, V, and W phase AC output terminals, respectively, thereby increasing the capacity. A three-phase power converter with three times higher power is configured.

Each of the above-described embodiments has shown the case of a 2-level conversion device in which each phase is 3 in parallel. Of course, the same configuration can be applied to general multi-phase, multi-parallel, and multi-level conversion devices. Moreover, the switching element to be used can be used regardless of kind, such as MOSFET and IGBT using silicon or silicon carbide (SiC), and has the same effect.
Further, the bus bar 17, the AC conductors 13 and 14, and the bus bar 18 in the composite laminate 81 in FIG. 1 of the first embodiment, and the bus bar 17 and the AC conductor 31 in the composite laminate 82 in FIG. 8 of the second embodiment. ˜36, the order of stacking the bus bars 18 can be arbitrarily selected.

1a-1f, 2a-2f switching element, 3a, 3b smoothing capacitor,
12a to 12d insulating plate, 13, 14 AC conductor, 17, 18 bus bar,
17a-17d, 18a-18d terminal, 21-26 series switching circuit,
31-36 AC conductor, 39c Insulating plate, 40, 41 Busbar,
40a, 40b, 41a, 41b terminal, 42, 43 AC conductor,
50, 51 busbar, 50a-50d, 51a-51d terminals,
61-66 semiconductor module,
81, 82, 83, 84, 181, 182 composite laminate,
100, 101, 102, 103 semiconductor unit,
200, 201, 202, 203 semiconductor unit,
300, 301, 302, 303 Semiconductor unit,
400, 401, 402, 403 semiconductor unit,
500, 501, 502, 503 Semiconductor unit.

Claims (7)

A semiconductor unit having a multilayer laminate, a switching element group, and a smoothing capacitor,
The multilayer laminate has a plate-like insulating member and a pair of plate-like conductors, and the plate-like conductor has a conductor connecting portion at each end on both sides in a predetermined direction, and the pair of plate-like conductors It is arranged oppositely through the plate-like insulating member,
The switching element group includes a plurality of series open / close circuits in which switching elements are connected in series via a series connection portion.
The smoothing capacitor is connected to the pair of plate conductors,
One end of each of the plurality of series switching circuits is connected to the other of the pair of plate conductors and one of the plate conductors by a connection conductor penetrating the plate-like insulating member, and each other end of the plurality of series switching circuits Is connected to the other of the plate conductors,
The conductor connection portion is a semiconductor unit in which adjacent ones can be connected when a plurality of the semiconductor units are arranged in the predetermined direction. Having an AC connecting conductor,
The switching element group includes a plurality of semiconductor modules, and the semiconductor module includes the series switching circuit and first, second, and third terminals, and both ends of the series switching circuit are the first and second terminals. Are connected to the third terminal, and the series connection portion is connected to the third terminal,
Each of the first terminals of the plurality of semiconductor modules is connected to one of the plate-like conductors by a connection conductor penetrating the other of the pair of plate-like conductors and the plate-like insulating member. 2. The semiconductor unit according to claim 1, wherein each second terminal is connected to the other of the plate-like conductors, and the third terminal is connected to the AC connection conductor. Having an AC connecting conductor,
The AC connection conductor has plate-like first and second AC conductors,
The multi-layer laminate has a second plate-like insulating member different from the plate-like insulating member,
The first and second AC conductors are integrated into the multilayer laminate so as to face the plate-like conductor via the second plate-like insulating member,
The plurality of series switching circuits are divided into a first group and a second group, and the switching element is configured so that the first AC conductor becomes the series connection portion of the series switching circuit belonging to the first group. The switching element is connected in series via the first AC conductor, and the switching element is connected to the second AC so that the second AC conductor becomes the series connection portion of the series switching circuit belonging to the second group. 2. The semiconductor unit according to claim 1, wherein the semiconductor unit is connected in series via a conductor. Having an AC connecting conductor,
The AC connection conductor has a plurality of plate-like AC input side conductors and the same number of plate-like AC output side conductors as the AC input side conductors,
The multi-layer laminate has a third plate-like insulating member different from the plate-like insulating member,
The AC input side conductor and the AC output side conductor are integrated into the multilayer laminate so as to face the plate conductor via the third plate insulating member,
The plurality of series switching circuits are divided into the same number of alternating current input side groups as the number of the plurality of alternating current input side conductors and the same number of alternating current output side groups as the number of the alternating current output side conductors. The switching elements are connected in series via the plurality of AC input side conductors so that the conductors are the series connection portions of the series switching circuits belonging to the AC input side group, and the plurality of AC output side conductors are The switching elements are connected in series via the plurality of AC output side conductors so as to be the series connection portions of the series switching circuits belonging to the AC output side group, respectively. 2. The semiconductor unit according to 1. A plurality of the conductor connection portions are provided in a direction crossing the predetermined direction, and when a plurality of the semiconductor units are disposed adjacent to the predetermined direction, adjacent conductors are connected to each other. The semiconductor unit according to any one of claims 1 to 4, wherein the semiconductor unit is made possible. A power conversion device in which three semiconductor units according to any one of claims 1 to 5 are arranged side by side in the predetermined direction and the conductor connection portions of the adjacent semiconductor units are connected to each other. The semiconductor unit according to claim 4,
The AC input side conductor is composed of first, second, and third AC input side conductors, and the AC output side conductor is composed of first, second, and third AC output side conductors,
The first, second, and third AC input-side conductors and the first, second, and third AC output-side conductors are opposed to the plate-like conductor via the third plate-like insulating member. Integrated into the multilayer laminate,
The plurality of series switching circuits correspond to the first, second, and third AC input side conductors, and the first, second, and third AC input side groups and the first, second, and third AC The output side conductors are divided into first, second, and third AC output side groups, and the first, second, and third AC input side conductors are the first, second, and second, respectively. The switching elements are connected in series via the first, second, and third AC input side conductors so as to be the series connection portions of the series switching circuits belonging to three AC input side groups, , The second and third AC output-side conductors are the first and second switching elements of the series switching circuits belonging to the first, second, and third AC output-side groups, respectively. Are connected in series via the second and third AC output side conductors,
A power conversion device in which the semiconductor units are arranged in three units in the predetermined direction, and the conductor connection portions of the adjacent semiconductor units are connected to each other.

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