JP2012164973A - Laminate for forming wiring board, wiring board, and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laminate for forming a wiring board, which allows a wiring board having excellent thermal conductivity to be formed and has excellent processability, and to provide a wiring board manufactured using the same, and a method for manufacturing a semiconductor device.SOLUTION: A laminate for forming a wiring board is configured to include: a wiring board material in which a first metal layer for circuit formation, an insulating layer, and a second metal layer are laminated in this order; an adhesive layer provided on the second metal layer of the wiring board material; and a separator provided on the adhesive layer and having a heat-resistant resin layer.

Description

  The present invention relates to a laminate for forming a wiring board, a wiring board, and a method for manufacturing a semiconductor device.

Wiring boards on which LEDs are mounted as light emitting elements are widely used for applications such as backlights for liquid crystal displays. Since such a wiring board is required to efficiently release the heat generated by the LED to the outside, a metal plate such as aluminum or copper is provided on the surface opposite to the circuit layer (hereinafter also referred to as “back surface”). In many cases, a so-called metal-based wiring board with a wire is used. Usually, a metal base wiring board is affixed to a casing made of metal or the like via a double-sided adhesive tape so that heat can be conducted and removed without delay.
The metal plate used for the metal base wiring board is relatively expensive as a member of the wiring board. When the thickness of the metal plate increases, the material cost increases, and there are problems such as an increase in weight and an increase in thermal resistance. It tends to increase. Therefore, it is preferable to use a thin metal plate in terms of weight reduction, reduction in thermal resistance, cost reduction, and the like. However, if the metal plate is thin, it becomes too flexible, so that the workability during circuit processing and assembly tends to deteriorate. For this reason, the use of a metal plate of 300 μm or less is hardly performed.
Moreover, in such a thin wiring board, a resist, a protective film, etc. may be installed in order to protect the metal foil on the back surface during circuit processing. In this case, when peeling these after circuit processing, there existed problems, such as a wiring board deform | transforming. In order to prevent such deformation, a support such as a stiffener or a backing material may be provided. However, these have caused cost increases.

In relation to the above, a technique for disposing a pressure-sensitive adhesive layer and a metal foil separator laminated with a metal foil or a polymer material on the back surface of a wiring board that does not have a metal plate on the back surface is disclosed. It is said that it has excellent cleaning resistance (see, for example, Patent Document 1). Similarly, as a separator, a technique using paper coated with a vinylidene chloride copolymer film (for example, see Patent Document 2) and a technique using a composite material made of ceramics and paper (for example, see Patent Document 3) are disclosed. It is said to be excellent in reflow resistance, cleaning resistance, and punchability.
Furthermore, a technique using glass or ceramics as a separator is disclosed, and is excellent in heat resistance and etching resistance (see, for example, Patent Document 4).

JP-A-8-64919 JP-A-8-222818 Japanese Patent No. 4480814 Japanese Patent No. 4178869

However, in the techniques described in Patent Documents 1 to 4, there are cases where the thermal conductivity and workability of the formed wiring board are not sufficient.
The present invention has been made in view of the above, and is capable of forming a wiring board having excellent thermal conductivity and is capable of forming a wiring board forming laminate having excellent workability, a wiring board manufactured using the same, and a semiconductor device It is an object to provide a manufacturing method.

Specific means for solving the above problems are as follows.
<1> A wiring board material in which a first metal layer, an insulating layer, and a second metal layer for circuit formation are laminated in this order, and an adhesive provided on the second metal layer of the wiring board material A laminate for forming a wiring board, comprising: an agent layer; and a separator provided on the pressure-sensitive adhesive layer and having a heat-resistant resin layer.

<2> The laminate for forming a wiring board according to <1>, wherein an average thickness of the wiring board material is 50 μm or more and 500 μm or less.

<3> The wiring board according to <1> or <2>, wherein the heat-resistant resin layer includes a heat-resistant resin having a shrinkage rate of 3% or less after heat treatment at 250 ° C. for 1 minute. Forming laminate.

<4> The laminate for forming a wiring board according to any one of <1> to <3>, wherein the separator further includes at least one selected from the group consisting of an aluminum foil and a copper foil.

The <5> above-mentioned adhesive layer is a laminated body for wiring board formation of any one of said <1>-<4> containing an acrylic resin.

<6> A wiring board obtained by forming a circuit on a first metal layer for circuit formation of the laminate for forming a wiring board according to any one of <1> to <5>.

<7> A step of forming a circuit on the first metal layer for circuit formation of the laminate for forming a wiring board according to any one of <1> to <5>, and reflow on the formed circuit A method for manufacturing a semiconductor device, comprising: a step of mounting a semiconductor element by a process; and a step of peeling the separator at an interface with the pressure-sensitive adhesive layer and attaching a housing on the pressure-sensitive adhesive layer.

  ADVANTAGE OF THE INVENTION According to this invention, the wiring board formation laminated body which can form the wiring board excellent in heat conductivity, and is excellent in workability, the wiring board manufactured using this, and the manufacturing method of a semiconductor device can be provided. .

  In this specification, the term “process” is not limited to an independent process, and is included in the term if the intended action of the process is achieved even when it cannot be clearly distinguished from other processes. . The numerical range indicated by using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively. Further, the amount of each component in the composition means the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition.

<Laminated body for wiring board formation>
The laminated body for forming a wiring board according to the present invention includes a wiring board material in which a first metal layer for circuit formation, an insulating layer, and a second metal layer are laminated in this order, and a second of the wiring board material. A pressure-sensitive adhesive layer provided on the metal layer, and a separator provided on the pressure-sensitive adhesive layer and having a heat-resistant resin layer. Moreover, the said laminated body for wiring board formation may further contain the other layer as needed.

By having the pressure-sensitive adhesive layer and the separator provided on the wiring board material, the wiring board material is excellent in handleability, the wiring board material itself can be made thinner, and the thermal conductivity is further improved. Moreover, the external formability is improved. This can be considered, for example, because the separator functions as a stiffener (reinforcing material). Furthermore, since the second metal layer is covered with the pressure-sensitive adhesive layer and the separator, a circuit can be formed on the first metal layer by a commonly used etching process, and productivity is improved.
In addition, since the separator has heat resistance, it is possible to suppress deformation of the wiring board when a semiconductor element or the like is mounted on the formed circuit by reflow processing.
Furthermore, the adhesive layer is provided prior to the mounting of the semiconductor element, etc., so that the adhesion between the second metal layer of the wiring board and the adhesive layer is excellent, and the thermal conductivity between the wiring board and the housing is excellent. The semiconductor device can be manufactured with high productivity.

  Moreover, in addition to the 1st metal layer for circuit formation, the wiring board material can comprise the wiring board excellent in thermal conductivity by having a 2nd metal layer. Moreover, when the second metal layer is covered with the adhesive layer and the separator, the second metal layer is formed when the wiring board forming laminate is processed to manufacture the wiring board on which the semiconductor element is mounted. Oxidation and the like can be suppressed and thermal conductivity can be prevented from decreasing.

[Wiring board materials]
The wiring board material is configured by laminating a first metal layer for circuit formation, an insulating layer, and a second metal layer in this order, and further including other layers as necessary.
The first metal layer is not particularly limited as long as it is made of a metal capable of forming a circuit. Generally, it is configured using a metal foil. As the metal foil, a foil of copper, aluminum, iron, gold, silver, nickel, palladium, chromium, molybdenum or an alloy thereof is preferably used. Among these, copper foil is preferable.
The thickness of the first metal layer is not particularly limited as long as a circuit can be formed. For example, from the viewpoint of thermal conductivity, workability, and weight reduction, the average thickness is preferably 5 μm or more and 500 μm or less, and more preferably 30 μm or more and 200 μm or less. The average thickness of the first metal layer is given as an arithmetic average value obtained by measuring the thickness of five points using a micrometer or the like. The same applies to the average thicknesses of the other layers.
The surface of the metal foil in contact with the insulating layer is mechanically or chemically treated by chemical roughening, corona discharge, sanding, plating, aluminum alcoholate, aluminum chelate, silane coupling agent, etc., in order to increase the adhesion to the insulating layer. The process may be performed.
The first metal layer may be provided on the entire surface of the insulating layer or may be provided only in a part of the region.

The second metal layer is provided on the surface of the insulating layer opposite to the surface on which the first metal layer is provided (hereinafter also referred to as “back surface”). When the wiring board material has the second metal layer, a wiring board having excellent thermal conductivity and workability can be configured.
The second metal layer is generally configured using a metal foil. As a 2nd metal foil, the thing similar to the metal foil in a 1st metal layer can be mentioned, A copper foil is used suitably.
The thickness of the second metal layer is not particularly limited, but the average thickness is preferably 50 μm or more and 500 μm or less, more preferably 70 μm or more and 200 μm or less from the viewpoint of thermal conductivity, workability, and weight reduction. .
The surface of the metal foil composing the second metal layer in contact with the insulating layer is chemically roughened, corona discharge, sanding, plating, aluminum alcoholate, aluminum chelate, silane cup, in order to increase the adhesion with the insulating layer. Mechanical or chemical treatment may be performed with a ring agent or the like.
The second metal layer may be provided on the entire surface of the insulating layer or may be provided only on a part of the region, but from the viewpoint of thermal conductivity and workability, the second metal layer is provided on the entire surface of the insulating layer. It is preferable.

The insulating layer is preferably composed of an insulating resin sheet. The resin constituting the insulating layer is not particularly limited. Examples of the resin include high molecular weight resins such as polyimide and polyester, epoxy resins, silicone resins, acrylic resins, and mixtures thereof. The insulating layer may further contain various fillers in addition to the resin.
The thickness of the insulating layer is not particularly limited. For example, the average thickness can be 3 μm or more and 200 μm or less, and preferably 9 μm or more and 40 μm or less.

The thickness of the wiring board material is not particularly limited, but from the viewpoint of thermal conductivity and weight reduction, the average thickness is preferably 50 μm or more and 700 μm or less, more preferably 50 μm or more and 500 μm or less, and 70 μm or more and 200 μm or less. More preferably.
The average thickness of the wiring board material is given as an arithmetic average value obtained by measuring the thickness of five points using a micrometer or the like.

  Specifically, the wiring board material is a flexible substrate with a metal foil using a non-thermoplastic polyimide film such as a conventional aromatic polyimide as a polymer insulating film, and a metal such as copper is deposited or sputtered on the polyimide film. And a wiring board material using a thermoformable liquid crystal polymer. In particular, an adhesive using an epoxy resin, an acrylic resin, or the like described in Japanese Patent Application Laid-Open Nos. 2007-274329, 2007-049502, 2007-168123, etc. is not used because of excellent heat resistance. A flexible substrate or a flexible printed wiring board can be preferably used.

[Adhesive layer]
In the laminate for forming a wiring board, an adhesive layer is provided on the second metal layer in the wiring board material. The pressure-sensitive adhesive layer includes at least one pressure-sensitive adhesive.
An adhesive is comprised including other additives, such as a high molecular weight component and a tackifier as needed, for example. Specific examples of the high molecular weight component constituting the adhesive include polyimide, polystyrene, polyethylene, polyester, polyamide, butadiene rubber, acrylic rubber, (meth) acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, and phenoxy resin. , Modified polyphenylene ether resin, phenoxy resin, polycarbonate, a mixture thereof, and the like.

Among these, from the viewpoint of heat resistance, a pressure-sensitive adhesive mainly composed of a (meth) acrylic acid ester copolymer and crosslinked with a crosslinking agent is preferable.
The (meth) acrylic acid ester copolymer is composed of at least one (meth) acrylic acid ester and an unsaturated monomer copolymerizable therewith. Examples of (meth) acrylic acid esters include n-butyl (meth) acrylate, isobutyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, and the like. .
Here, (meth) acrylic acid ester means methacrylic acid ester, acrylic acid ester and a mixture thereof.

  Examples of the unsaturated monomer copolymerizable with (meth) acrylic acid ester include acrylonitrile and styrene.

The weight average molecular weight of the (meth) acrylic acid ester copolymer suitably used in the present invention is not particularly limited, but is preferably 300,000 to 1,200,000, more preferably 400,000 to 800,000. is there.
When the weight average molecular weight of the (meth) acrylic acid ester copolymer is 300,000 or more, the cohesive force of the pressure-sensitive adhesive can be sufficiently obtained even when the usual amount of the crosslinking agent is added, and good pressure-sensitive adhesive properties are obtained. can get. Further, when the weight average molecular weight is 1,200,000 or less, good adhesive properties can be obtained.
The weight average molecular weight of the acrylic ester copolymer is a value obtained by measuring by a gel permeation chromatography method and converting from a standard polystyrene calibration curve.

The crosslinking agent is not particularly limited. For example, an isocyanate compound, an epoxy resin, a metal chelate, etc. are mentioned. As a content rate of a crosslinking agent, it is preferable that it is 1 mass%-10 mass% with respect to a (meth) acrylic acid ester copolymer, and it is more preferable that it is 2 mass%-5 mass%.
The pressure-sensitive adhesive may further contain various additives such as a tackifier resin, an anti-aging agent, and a filler.

The film thickness of the pressure-sensitive adhesive layer is not particularly limited. For example, the average thickness can be 100 μm or less. From the viewpoint of thermal conductivity, the average thickness is preferably 1 μm to 100 μm, more preferably 3 μm to 80 μm, and even more preferably 5 μm to 70 μm.
When the average thickness of the pressure-sensitive adhesive layer is 1 μm or more, sufficient adhesiveness tends to be obtained, and the second metal layer can be appropriately protected in an etching process during circuit processing. Moreover, there exists a tendency for favorable heat conductivity to be acquired as it is 100 micrometers or less, and also it is excellent in productivity.

[Separator]
The separator is provided on the pressure-sensitive adhesive layer, has at least a heat-resistant resin layer, and includes other layers as necessary. The separator may be composed of a heat resistant resin layer, or may include another layer (preferably a base material), and may have a heat resistant resin layer on one or both surfaces of the other layer. Good. When the separator includes other layers, it is preferable to have at least a heat-resistant resin layer on the surface opposite to the surface facing the pressure-sensitive adhesive layer, and to have heat-resistant resin layers on both surfaces of the other layers. More preferred.

Here, the heat resistance means that the shrinkage rate after heat treatment for 1 minute in an atmosphere of 250 ° C. is 3% or less based on the length. Specifically, the shrinkage rate is calculated as follows.
A resin sheet for evaluation processed into a sheet having a length of 10 cm × 10 cm and a thickness of 20 μm to 100 μm is prepared. The length of the diagonal line is measured at 25 ° C. for the resin sheet for evaluation. Next, the length of the diagonal line was measured at 25 ° C. for the evaluation resin sheet that was heat-treated at 250 ° C. for 1 minute and then allowed to cool at room temperature. The length of the diagonal line after the heat treatment was the length of the diagonal line before the heat treatment. Divide by to calculate the shrinkage rate.

  Specific examples of the resin having heat resistance include polyethylene naphthalate resin, polyimide resin, epoxy resin, polyamide resin, and polyamideimide resin. Among these, from the viewpoint of low shrinkage, it is preferably at least one selected from the group consisting of a polyimide resin, an epoxy resin, and a polyamideimide resin, and at least one selected from the group consisting of a polyimide resin and a polyamideimide resin. More preferably.

  The polyimide resin can be appropriately selected from polyimide resins usually used as heat resistant resins. The epoxy resin can be appropriately selected from epoxy resins usually used as heat resistant resins. Furthermore, the polyamideimide resin can be appropriately selected from polyamideimide resins usually used as heat resistant resins.

  From the viewpoint of heat resistance, acid resistance, alkali resistance, water resistance and workability, the thickness of the heat resistant resin layer in the separator is preferably 0.1 μm to 10 μm, and preferably 0.3 μm to 7 μm. Is more preferable.

In addition to the heat resistant resin layer, the separator preferably includes a substrate as another layer. By including the base material, processability and handleability are further improved.
The substrate of the separator is not particularly limited, but preferably has heat resistance that does not cause significant deformation or alteration during the solder reflow process. Specifically, paper, a nonwoven fabric, metal foil, etc. can be mentioned. Among these, from the viewpoints of heat resistance, acid resistance, alkali resistance and water resistance, it is preferably at least one substrate selected from the group consisting of aluminum foil, copper foil, polyimide resin sheet, and polyethylene naphthalate resin sheet. More preferably, the metal foil is at least one metal foil selected from the group consisting of aluminum foil and copper foil.

  The thickness of the substrate in the separator is not particularly limited, but the average thickness is preferably 5 μm to 200 μm and more preferably 20 μm to 60 μm from the viewpoint of processability and handleability.

  When the separator is composed of a substrate and a heat-resistant resin layer, the heat-resistant resin layer is preferably provided on at least the surface of the substrate opposite to the surface facing the pressure-sensitive adhesive layer. More preferably, heat resistant resin layers are provided on both sides of the material. In this invention, it is also preferable that it is provided in the single side | surface from a viewpoint of corrosion resistance and heat resistance.

  The separator in the present invention is at least one selected from the group consisting of aluminum foil, copper foil, polyimide resin sheet, and polyethylene naphthalate resin sheet from the viewpoints of heat resistance, acid resistance, alkali resistance, water resistance and processability. It is preferable to have a base material and a heat-resistant resin layer that is at least one selected from the group consisting of a polyimide resin, an epoxy resin, and a silicone resin provided on the base material, an aluminum foil, and a copper foil A base material that is at least one metal foil selected from the group consisting of: a heat-resistant resin layer that is provided on the base material and is at least one type selected from the group consisting of a polyimide resin and an epoxy resin; More preferably.

The surface of the separator that faces the pressure-sensitive adhesive layer preferably has peelability from the pressure-sensitive adhesive layer. Thereby, the process of sticking a wiring board to a housing | casing can be implemented more efficiently.
The method for imparting peelability to the surface of the separator that faces the pressure-sensitive adhesive layer is not particularly limited. For example, a surface treatment method using a release agent such as a silicone-based release agent, a fluorine-based release agent, and a long-chain alkyl acrylate release agent can be given.

<Method for producing laminate for forming wiring board>
A method for producing a laminate for forming a wiring board includes: an adhesive on a second metal layer of a wiring board material in which a first metal layer for circuit formation, an insulating layer, and a second metal layer are laminated in this order; If a layer and the separator which has a heat resistant resin layer can be laminated | stacked in this order, it will not restrict | limit in particular.
For example, the 1st manufacturing method including the process of providing an adhesive layer on the 2nd metal layer of wiring board material, and the process of laminating a separator on the adhesive layer, The process of providing an adhesive layer on a separator And a step of laminating the separator provided with the pressure-sensitive adhesive layer on the wiring board material so that the pressure-sensitive adhesive layer provided on the separator is in contact with the second metal layer of the wiring board material. The method etc. can be mentioned. Among these, the second production method is preferable from the viewpoint of productivity.

As a process of providing the pressure-sensitive adhesive layer on the separator, a method usually used for forming the pressure-sensitive adhesive layer can be applied without particular limitation. For example, the method of apply | coating or laminating the composition for adhesive layers containing an adhesive on a separator can be mentioned. Moreover, after forming an adhesive layer on another base material, you may transcribe | transfer the adhesive layer formed on another base material on a separator. When another substrate is used, for example, a polyethylene terephthalate film subjected to release treatment is used as another substrate.
The surface on which the pressure-sensitive adhesive layer of the separator is provided is preferably surface-treated with a release agent. The release agent used is as described above.

Examples of the step of laminating the separator provided with the pressure-sensitive adhesive layer on the wiring board material so as to be in contact with the second metal layer of the wiring board material include a pressing method and a hot roll laminating method. The hot roll laminating method is preferable because it can be manufactured efficiently and is efficient.
The pressing method, hot roll laminating method, and the like can be appropriately selected from methods usually performed in the technical field. For example, as a hot roll laminating method, a hot roll laminator equipped with a silicone rubber coating roll can be used under the conditions of 20 ° C. to 50 ° C. and a pressure of 0.1 to 1 MPa.

<Method for Manufacturing Semiconductor Device>
The method for manufacturing a semiconductor device of the present invention includes a step of forming a circuit on a first metal layer for forming a circuit of the laminate for forming a wiring board, and a step of mounting a semiconductor element on the formed circuit by a reflow process And a step of peeling the separator at the interface with the pressure-sensitive adhesive layer and affixing a housing on the pressure-sensitive adhesive layer, and other steps as necessary.
By using the laminate for forming a wiring board, it is not necessary to provide a peeling process or a laminating process for a protective film or the like, thereby improving productivity. Moreover, since the 2nd metal layer is protected by the adhesive layer and the separator at the time of a reflow process, the raise of the thermal resistance of a 2nd metal layer can be suppressed and the outstanding heat dissipation can be achieved.

The step of forming a circuit on the first metal layer for forming a circuit of the laminate for forming a wiring board can be appropriately selected from methods usually used for circuit processing of the metal layer of the wiring board material. For example, a step of forming a resist for forming a circuit in a desired shape on the first metal layer using printing, a photoresist film, and the like, and a region where the resist of the first metal layer is not formed, The circuit can be formed by a method including a step of removing the metal foil by etching with a corrosive liquid.
In the present invention, since the second metal layer is protected by the pressure-sensitive adhesive layer and the separator, it is possible to form a circuit in the first metal layer without the second metal layer being damaged by etching. it can.
Furthermore, by reducing the thickness of the first metal layer and the second metal layer (for example, 30 μm or more and 100 μm or less), there is no need to use a protective material on the outer peripheral portion of the wiring board forming laminate, and it is easier. Circuit processing is possible.

In the process of mounting the semiconductor element on the formed circuit by reflow processing, for example, if necessary, the process of forming a solder resist on the circuit surface, or the outer shape of the wiring board forming laminate to the required size After performing the step of performing, the semiconductor element is arranged on the circuit, and the semiconductor element is mounted on the circuit by a reflow process. At this time, other components other than the semiconductor element may be mounted simultaneously. The reflow process is performed under normally used conditions appropriately selected according to the solder material used for mounting.
In this invention, since it has a heat resistant resin layer on the surface of a separator, even if it heats to about 260 degreeC by a reflow process, it suppresses effectively that the thermal resistance of a 2nd metal layer rises. be able to.

After the semiconductor element is mounted on the circuit, the separator is peeled off at the interface with the pressure-sensitive adhesive layer, and the semiconductor device is manufactured by sticking the housing on the surface of the pressure-sensitive adhesive layer from which the separator has been removed. Can do.
The method of peeling the separator at the interface with the pressure-sensitive adhesive layer and the method of sticking the housing on the pressure-sensitive adhesive layer are not particularly limited and can be appropriately selected from methods usually performed.
The method of sticking the housing on the adhesive layer is preferably a method in which the pressure-sensitive adhesive layer and the housing are brought into contact with each other and pressure is applied to a region of the wiring board other than a component such as a mounted semiconductor element. The pressure to be applied is not particularly limited and is appropriately selected according to the configuration of the pressure-sensitive adhesive layer.

In a conventional method for manufacturing a semiconductor device, generally, a protective film is disposed on one side of a wiring board material having metal layers on both sides and a circuit is processed, and then the protective film is peeled off. Next, after mounting the semiconductor element by reflow treatment, an adhesive layer and a separator are laminated on the side opposite to the mounting surface of the semiconductor element. Next, the separator is peeled off, and the housing is stuck on the adhesive layer.
As described above, the number of steps of stacking and peeling is larger than that of the method for manufacturing a semiconductor device of the present invention, so that the steps become complicated. In addition, the metal surface that has not been circuit-processed during reflow processing may oxidize and the thermal resistance may deteriorate, but in the present invention, the metal surface that has not been circuit-processed also during reflow processing is protected, An increase in resistance can be suppressed.

  EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.

<Example 1>
100 μm thick copper foil made by Hitachi Chemical Co., Ltd., polyimide substrate MCF-5000I (three-layer structure of wiring board material having an average thickness of 150 μm, copper foil average thickness of 35 μm, insulating layer average thickness of 15 μm, copper foil average thickness of 100 μm) Double-sided pressure-sensitive adhesive tape with double-sided separator on the surface (Separator: heat-resistant resin-coated aluminum foil with an epoxy resin layer of 5 μm on one side, average thickness 35 μm, epoxy resin shrinkage 0.1%; pressure-sensitive adhesive layer: acrylic After peeling the separator on one side of the adhesive, the average thickness is 50 μm, and using a hot roll laminator (HOTDOG LMP-350EX, manufactured by Lamy Corporation), it is attached under the conditions of a temperature of 25 ° C. and a pressure of 0.3 MPa. A forming laminate was obtained.

  The shrinkage rate of the heat resistant resin constituting the separator was measured as follows. A heat-resistant resin film having a thickness of 50 μm was prepared, this was cut into 10 cm × 10 cm, and the length of the diagonal line was measured at 25 ° C. Subsequently, after heat-treating in an oven at 250 ° C. for 1 minute, it was allowed to cool at room temperature. The diagonal length of the heat-resistant resin film after the heat treatment was measured, and this was divided by the length of the diagonal line before the heat treatment to calculate the shrinkage rate.

  Using the obtained laminate for forming a wiring board, an etching resist was provided on a 35 μm thick copper foil surface, and then the copper foil was corroded and dissolved in an aqueous iron chloride solution to process a circuit. Thereafter, a solder resist was printed at a predetermined location and cured at 150 ° C. for 2 hours. Thereafter, the outer shape was processed to a width of 5 mm and a length of 400 mm to obtain a wiring board in which an adhesive layer and a separator were laminated on a surface opposite to the surface on which the circuit was formed.

After arranging the LED chip and the connector on the circuit of the obtained wiring board, the LED chip and the connector were mounted with solder by a reflow process (temperature of 265 ° C.).
Thereafter, the separator was peeled off, and the exposed adhesive layer was attached to an aluminum housing (size 10 mm × 430 mm × 2 mm) to obtain a semiconductor device.
At the time of pasting, pressure was applied to the wiring board portion on which the LED chip and the connector were not mounted and fixed.
It was 80 degreeC when the surface temperature of the LED chip at the time of electricity supply of the obtained semiconductor device was measured.

<Example 2>
In Example 1, as a separator: In the same manner as in Example 1 except that a heat-resistant resin-coated aluminum foil provided with a 5 μm polyimide resin layer (polyimide resin shrinkage of 0.1%) on one side was used. A semiconductor device was obtained.
It was 80 degreeC when the surface temperature of the LED chip at the time of electricity supply of the obtained semiconductor device was measured.

<Comparative Example 1>
100 μm thick copper foil made by Hitachi Chemical Co., Ltd., polyimide substrate MCF-5000I (three-layer structure of wiring board material having an average thickness of 150 μm, copper foil average thickness of 35 μm, insulating layer average thickness of 15 μm, copper foil average thickness of 100 μm) A protective film (non-heat resistant polyethylene film (average thickness 50 μm) provided with a pressure-sensitive adhesive layer (average thickness 50 μm) on one side) was attached to the surface.
Since a tensile tension was generated in the polyethylene film when the polyethylene film was attached, the substrate was warped and could not pass through the subsequent process.

<Comparative example 2>
100 μm thick copper foil made by Hitachi Chemical Co., Ltd., polyimide substrate MCF-5000I (three-layer structure of wiring board material having an average thickness of 150 μm, copper foil average thickness of 35 μm, insulating layer average thickness of 15 μm, copper foil average thickness of 100 μm) A protective film (non-heat-resistant polyethylene terephthalate film (average thickness 50 μm, shrinkage 20%) provided with a pressure-sensitive adhesive layer (average thickness 50 μm) on one side) is attached to the surface, and a laminate for forming a wiring board is obtained. Obtained.

  Thereafter, an etching resist was provided on the surface of the 35 μm thick copper foil, and then the copper foil was corroded and dissolved in an aqueous iron chloride solution to process a circuit. Thereafter, a solder resist was printed at a predetermined location and cured at 150 ° C. for 2 hours. Thereafter, the outer shape was processed to have a width of 5 mm and a length of 400 mm to obtain a wiring board in which an adhesive layer and a polyethylene terephthalate film were laminated on the surface opposite to the surface on which the circuit was formed.

After arranging the LED chip and the connector on the circuit of the obtained wiring board, the LED chip and the connector were mounted with solder by a reflow process (temperature of 265 ° C.).
At that time, since the polyethylene terephthalate film was shrunk by heat, the substrate was deformed, and the LED chip could not be mounted at a predetermined position.

<Comparative Example 3>
100 μm thick copper made by Hitachi Chemical Co., Ltd. polyimide substrate MCF-5000I (wiring board material having an average thickness of 150 μm, copper foil average thickness of 35 μm, insulation layer average thickness of 15 μm, copper foil average thickness of 100 μm) A protective film (non-heat-resistant polyethylene terephthalate film (average thickness 50 μm, shrinkage 20%) provided with a pressure-sensitive adhesive layer (average thickness 50 μm) on one side) is attached to the foil surface, and a laminate for wiring board formation Got.

  Thereafter, an etching resist was provided on the surface of the 35 μm thick copper foil, and then the copper foil was corroded and dissolved in an aqueous iron chloride solution to process a circuit. Thereafter, a solder resist was printed at a predetermined location and cured at 150 ° C. for 2 hours. After peeling off the protective film, the outer shape was processed to a width of 5 mm and a length of 400 mm to obtain a wiring board.

After arranging the LED chip and the connector on the circuit of the obtained wiring board, the LED chip and the connector were mounted with solder by a reflow process.
Then, after peeling the separator on one side of the adhesive tape with double-sided separator (separator: polyethylene terephthalate film; adhesive layer: acrylic adhesive, average thickness 50 μm), it is opposite to the mounting surface of the wiring board on which the LED chip is mounted Adhere the adhesive tape on the side surface. When the adhesive tape was applied, pressure was applied to the wiring board portion on which the LED chip was not mounted, and a gap was partially generated between the copper foil surface of the wiring board and the adhesive tape.
Next, the polyethylene terephthalate film of the pressure-sensitive adhesive tape was peeled off, and the exposed pressure-sensitive adhesive layer was attached to an aluminum casing to obtain a semiconductor device.
At the time of pasting, pressure was applied to the substrate portion on which the LED chip and the connector were not mounted and fixed.
It was 88 degreeC when the surface temperature of the LED chip at the time of electricity supply of the obtained semiconductor device was measured.

From the above results, it can be seen that the laminate for forming a wiring board of the present invention is excellent in workability and can form a wiring board having excellent thermal conductivity. It can also be seen that the semiconductor device manufacturing method of the present invention can efficiently manufacture a semiconductor device having excellent thermal conductivity.

Claims (7)

A wiring board material in which a first metal layer for circuit formation, an insulating layer, and a second metal layer are laminated in this order;
An adhesive layer provided on the second metal layer of the wiring board material;
A laminate for forming a wiring board, comprising: a separator provided on the pressure-sensitive adhesive layer and having a heat-resistant resin layer.   The laminated body for wiring board formation of Claim 1 whose average thickness of the said wiring board material is 50 micrometers or more and 500 micrometers or less.   The laminate for forming a wiring board according to claim 1 or 2, wherein the heat-resistant resin layer includes a heat-resistant resin having a shrinkage rate of 3% or less after heat treatment at 250 ° C for 1 minute. .   The laminate for wiring board formation according to any one of claims 1 to 3, wherein the separator includes at least one selected from aluminum foil and copper foil.   The said adhesive layer is a laminated body for wiring board formation of any one of Claims 1-4 containing an acrylic resin.   The wiring board formed by the circuit formation in the 1st metal layer for circuit formation of the laminated body for wiring board formation of any one of Claims 1-5. Forming a circuit on the first metal layer for circuit formation of the laminate for forming a wiring board according to any one of claims 1 to 5;
Mounting a semiconductor element on the formed circuit by a reflow process;
Peeling the separator at the interface with the pressure-sensitive adhesive layer and attaching a housing on the pressure-sensitive adhesive layer;
A method of manufacturing a semiconductor device including: