JP2012156249A - Electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic apparatus which is easily manufactured while suppressing the deterioration of heat exchange performance.SOLUTION: A power module 11 includes: a heat exchange member 12 made of a ceramic; a wiring layer 14 adhered to the heat exchange member 12 with an adhesion sheet 15 containing metal nano filler that carboxyl groups are modified on its surface and an epoxy resin; and a power element 16 soldered to the wiring layer 14.

Description

  The present invention relates to an electronic device.

  Conventionally, a wiring layer on which electronic components such as power elements (semiconductor elements) are mounted is provided on an insulating substrate, and a cooling metal fin is provided on the surface of the insulating substrate opposite to the mounting surface of the power element. A power module as an electronic device is provided (for example, Patent Document 1).

  In the power module disclosed in Patent Document 1, heat generated when the power element is driven is transmitted to the aluminum corrugated fin through the wiring layer, the insulating substrate, and the heat dissipation layer, thereby enabling efficient heat dissipation.

JP 2006-310486 A

  By the way, the power module of patent document 1 is manufactured as described below, for example. That is, in the power module of Patent Document 1, first, a thin plate made of an aluminum clad material is laminated on both sides of an insulating substrate and heated to obtain a laminated body in which a wiring layer, an insulating substrate, and a heat dissipation layer are bonded. Next, corrugated fins are brazed with aluminum to the heat dissipation layer of the laminate, and a power element is mounted on the surface of the wiring layer by soldering or the like. However, in the process of obtaining the laminate and the vacuum brazing process, it is necessary to perform heat treatment at a high temperature (for example, 580 ° C.), which is caused by the difference in the thermal expansion coefficient (linear expansion coefficient) of the materials constituting each member. As a result, warpage and distortion may occur in each member, and soldering of electronic components may be difficult. In addition, the heat treatment generally needs to be performed in a special environment (in a vacuum or in a reducing atmosphere), and it is easier to manufacture while reducing the number of components while suppressing a decrease in heat exchange performance. It was expected to provide electronic devices that could be used.

  The present invention has been made by paying attention to the problems existing in the above-described prior art, and an object thereof is to provide an electronic device that can be easily manufactured while suppressing a decrease in heat exchange performance. .

  In order to solve the above-mentioned problems, the invention according to claim 1 is characterized in that the heat exchange member is made of a heat exchange member made of an insulating material, an inorganic fine particle whose surface is modified with a functional group, and a bonding material containing a resin material. The gist of the invention is to include a joined wiring layer and an electronic component mounted on the wiring layer and thermally coupled to the heat exchange member.

  Note that an electronic component that is thermally coupled to the heat exchange member refers to an electronic component that can exchange heat with the heat exchange member, such as heat generation or heat absorption. According to this, by forming the heat exchange member with the insulating material, the heat exchange member and the insulation member can be used together, and the number of members can be reduced. In addition, the wiring layer on which the electronic component is mounted is bonded to the heat exchange member with a bonding material including a resin material. In general, a bonding material including a resin material can be bonded at a lower temperature than a bonding method such as brazing. For this reason, compared to bonding methods that require high-temperature heat treatment such as brazing, the wiring layer can be applied to the heat exchange member at a low temperature, so it is difficult to mount electronic components due to warpage and distortion. it can. In addition, the bonding material includes inorganic fine particles whose surfaces are modified with functional groups, and a resin material, and includes inorganic fine particles whose surfaces are modified with functional groups by suppressing aggregation of the inorganic fine particles in the bonding material. High thermal conductivity compared to no bonding material. That is, it can suppress that the heat exchange between a wiring layer and a heat exchange member is prevented. Therefore, according to invention of Claim 1, it can manufacture simply, suppressing that heat exchange performance falls.

The gist of the invention described in claim 2 is the electronic device according to claim 1, wherein the bonding material is an adhesive sheet formed in a sheet shape.
According to this, since the bonding material is formed in a sheet shape, the heat exchange member using the bonding agent and the wiring layer can be easily bonded.

  According to a third aspect of the present invention, in the electronic device according to the first or second aspect, the electronic component is mounted on the wiring layer by soldering, and a thermal decomposition temperature of the resin material constituting the bonding material is The gist is that the temperature is higher than the melting point of the solder.

  According to this, even when the bonding material is heated to the melting point of the solder at the time of soldering, since the bonding material is not thermally decomposed, it is possible to prevent the bonding by the bonding material from peeling off. Therefore, it is possible to solder the electronic component after joining the heat exchange member and the wiring layer. Accordingly, the soldering process of the electronic component can be set before or after the joining process of the heat exchange member and the wiring layer, and the degree of freedom in the manufacturing process can be increased.

  According to a fourth aspect of the present invention, in the electronic device according to any one of the first to third aspects, the heat exchange member includes a first heat exchange member and a second heat exchange member. The wiring layer includes a first wiring layer bonded to the first heat exchange member, and a second wiring layer bonded to the second heat exchange member; The gist is that it is mounted on the first wiring layer and the second wiring layer.

  According to this, heat exchange can be performed from the first heat exchange member and the second heat exchange member. And even if it is an electronic device containing such a some heat exchange member, it can manufacture simply, suppressing that heat exchange performance falls.

  According to a fifth aspect of the present invention, in the electronic device according to the fourth aspect, the electronic component includes an n-type semiconductor element and a p-type semiconductor element, the first wiring layer, and the second wiring. The gist is that the n-type semiconductor element and the p-type semiconductor element are mounted on the layer so as to be in series.

  According to this, heating and cooling by the Peltier effect can be performed by energizing each semiconductor element.

  ADVANTAGE OF THE INVENTION According to this invention, it can manufacture simply, suppressing that heat exchange performance falls.

1 is a schematic cross-sectional view of an electronic device according to a first embodiment. The schematic cross section of the electronic device in 2nd Embodiment.

(First embodiment)
A first embodiment in which the present invention is embodied in a power module as an electronic device will be described below with reference to FIG.

  As shown in FIG. 1, the power module 11 includes a heat exchange member 12 made of an insulating material (non-conductive material) such as ceramics. The heat exchange member 12 of this embodiment is formed from aluminum nitride having a thermal expansion coefficient (linear expansion coefficient) of 4 ppm / K. In addition, the heat exchange member 12 is formed by arranging a plurality of protrusions 12b side by side with a certain interval on one surface of a base 12a having a rectangular flat plate shape. A case 13 is assembled to the heat exchange member 12 so as to cover each protrusion 12b, and a medium flow for flowing a heat exchange medium (for example, water or air) between the protrusions 12b. A path 13a is formed.

  Further, in the heat exchange member 12, the side surface opposite to the surface on which the protrusions 12b are formed is smooth (flat), and serves as an adhesive surface 12c for adhering (joining) the wiring layer 14. A wiring layer 14 is bonded (bonded) to the bonding surface 12 c of the heat exchange member 12 by an adhesive sheet 15 as a bonding material (adhesive). The adhesive sheet 15 has a thin rectangular sheet shape corresponding to the shape of the adhesive surface 12 c of the heat exchange member 12. The thickness t1 of the adhesive sheet 15 is 100 μm or less, and more preferably 5 to 40 μm. The composition and physical properties of the adhesive sheet 15 will be described in detail later.

  The wiring layer 14 of the present embodiment is configured by a thin film (flat plate) made of aluminum having a thickness of 0.4 mm. The thermal expansion coefficient (linear expansion coefficient) of aluminum is 24 ppm / K. In the wiring layer 14, a power element 16 as an electronic component is soldered (mounted) with a solder 17 on the side surface opposite to the adhesive surface of the adhesive sheet 15. For the power element 16, for example, IGBT, MOSFET or the like is used. The power element 16 can be grasped as a heating element (heating element) that generates heat (dissipates heat) by driving (energization).

Next, the composition and physical properties of the adhesive sheet 15 will be described in detail.
The adhesive sheet 15 of the present embodiment is composed of a metal nanofiller as inorganic fine particles and an epoxy resin as a resin material. The thermal decomposition temperature of the epoxy resin is 300 ° C. or higher, and is higher than 220 ° C., which is the melting point (melting temperature) of solder (tin (Sn) -silver (Ag) -copper (Cu)).

  The metal nanofiller of this embodiment uses metal fine particles made of nickel (Ni). The particle diameter of the metal nanofiller is 500 nm or less, preferably 100 nm or less. In addition, the particle diameter shown to this embodiment is an average particle diameter observed with the scanning electron microscope (SEM). The thermal conductivity of the metal nanofiller is 50 W / mK or more, preferably 70 W / mK or more.

  In addition, the metal nanofiller of the present embodiment is modified with functional groups on the entire surface by organic bonding of organic molecules having a predetermined functional group to the entire surface. In this embodiment, decanoic acid which has a carboxyl group as a functional group and is a kind of carboxylic acid is used as the organic molecule. In the present embodiment, functional group modification (chemical binding of decanoic acid) to the surface of the metal nanofiller is performed using a known supercritical hydrothermal synthesis reaction.

  In general, a metal nanofiller having a particle size of 500 nm or less is very active and easily aggregates when simply dispersed in an epoxy resin, resulting in non-uniform metal nanofiller density in the adhesive sheet 15. For the same reason, when a part of the surface of the metal nanofiller is modified with a functional group, aggregation cannot be sufficiently suppressed due to the presence of an unmodified site. On the other hand, the entire surface of the metal nanofiller of the present embodiment is modified with a carboxyl group, which suppresses the aggregation of the metal nanofiller in the epoxy resin (adhesive sheet 15) and has a dispersibility in the epoxy resin. It can improve suitably. That is, the organic molecular layer on the surface of the metal nanofiller functions as an aggregation suppressing layer. For this reason, in the adhesive sheet 15 of this embodiment, the volume fraction of a metal nanofiller can be improved compared with the case where the metal nanofiller whose surface is not modified with the functional group is used. In the adhesive sheet 15 of the present embodiment, the volume fraction of the metal nanofiller is 70% or more, preferably 80 to 95%. For this reason, according to the adhesive sheet 15 of this embodiment, heat conductivity can be improved compared with the case where the metal nano filler whose surface is not modified with the functional group is used.

Next, a method for manufacturing the power module 11 will be described.
First, the heat exchange member 12 is injection molded, and the molded heat exchange member 12 is fired to obtain the heat exchange member 12 (heat exchange member forming step). Next, the adhesive sheet 15 is laminated on the adhesive surface 12c of the heat exchange member 12, and the wiring layer 14 is further laminated on the laminated adhesive sheet 15 (lamination process). Thereafter, the laminate of the heat exchange member 12, the adhesive sheet 15, and the wiring layer 14 is heated with a jig while being heated at 200 ° C., and the heat exchange member 12 and the wiring layer 14 are thermocompression bonded (adhered) with the adhesive sheet 15 ( Thermocompression process). This thermocompression bonding step is performed in an air atmosphere (at normal pressure and in air). Subsequently, the power element 16 is soldered to the wiring layer 14 bonded to the heat exchange member 12 with solder 17 by a reflow method (soldering process). This soldering step is performed, for example, under a reducing atmosphere by heating for 30 minutes to 250 ° C., which is lower than the thermal decomposition temperature of the epoxy resin in the present embodiment.

Next, the operation of the power module 11 will be described.
The power element 16 of the power module 11 generates heat when driven by energization. The heat of the power element 16 is transmitted in the order of the solder 17, the wiring layer 14, and the adhesive sheet 15, and further transmitted to the heat exchange member 12. The heat transferred to the heat exchange member 12 is radiated by heat exchange with the heat exchange medium flowing through the medium flow path 13a. Thus, in this embodiment, the power element 16 is thermally coupled to the heat exchange member 12.

According to the above embodiment, the following effects can be obtained.
(1) In this embodiment, by forming the heat exchange member 12 from an insulating material ceramic, the heat exchange member and the insulation member can be used together, and the number of members can be reduced. The wiring layer 14 to which the power element 16 is soldered is bonded to the heat exchange member 12 with an adhesive sheet 15. For this reason, in this embodiment, compared with a joining method such as a vacuum brazing method that requires a heat treatment at 580 ° C. in a vacuum or a metallization method that requires a heat treatment at 1300 ° C. or higher in a reducing atmosphere or vacuum. The wiring layer 14 can be applied to the heat exchange member 12 at a low temperature. For this reason, it is difficult to cause warping or distortion due to the difference in thermal expansion coefficient (linear expansion coefficient) of the material constituting each member, and it is difficult to solder (mount) the power element 16 in the soldering process. Can be suppressed. In addition, the adhesive sheet 15 includes a metal nanofiller whose surface is modified with a carboxyl group and an epoxy resin, and the surface is modified with a functional group by suppressing aggregation of the metal nanofiller in the adhesive sheet 15. Compared to the adhesive sheet 15 that does not contain the metal nanofiller, it has high thermal conductivity. That is, it is possible to suppress the heat exchange between the wiring layer 14 and the heat exchange member 12 from being hindered. Therefore, in this embodiment, it can manufacture simply, suppressing that heat exchange performance falls.

  (2) Further, in the present embodiment, the heat exchange member 12 is used as the heat exchange member and the heat exchange member 12 to reduce the number of members as compared with the conventional power module, and the heat exchange member 12 is provided on the insulating substrate. The process of joining can be omitted. Therefore, the manufacturing cost can be reduced.

(3) The wiring layer 14 and the heat exchange member 12 are bonded using the adhesive sheet 15 formed in a sheet shape. Therefore, adhesion between the heat exchange member 12 and the wiring layer 14 can be simplified.
(4) The thermal decomposition temperature (300 ° C.) of the epoxy resin constituting the adhesive sheet 15 is higher than the melting point (220 ° C.) of the solder 17 used when the power element 16 is mounted on the wiring layer 14. For this reason, the power element 16 can be soldered after the heat exchange member 12 and the wiring layer 14 are bonded. Therefore, the soldering process of the power element 16 can be set before and after the thermocompression bonding process of the heat exchange member 12 and the wiring layer 14, and the degree of freedom in the manufacturing process can be increased.

(5) Since the metal nanofiller has a thermal conductivity of 50 W / mK or more, it is easy to increase the thermal conductivity of the adhesive sheet 15.
(6) The thickness t1 of the adhesive sheet 15 was 100 μm or less. For this reason, while being able to reduce the usage-amount of a metal nano filler and an epoxy resin, thermal conductivity can be improved.

  (7) The particle diameter of the metal nanofiller was 500 nm or less. For this reason, it is suitable for mix | blending a metal nano filler with the high volume fraction to the adhesive sheet 15 whose thickness is 100 micrometers or less.

(8) The entire surface of the metal nanofiller was modified with a carboxyl group. For this reason, the dispersibility can be improved while suppressing aggregation of the metal nanofiller in the epoxy resin (adhesive sheet 15). And the heat conductivity of the adhesive sheet 15 can be improved compared with the case where the metal nano filler whose surface is not modified with the functional group is used.
(Second Embodiment)
Next, a second embodiment in which the present invention is embodied in a Peltier module as an electronic device will be described with reference to FIG. In the following description, the same reference numerals are given to the same configurations as those of the already described embodiments, and the overlapping description is omitted or simplified.

  As shown in FIG. 2, the Peltier module 21 includes a heat exchange member 12 having the same configuration as that of the first embodiment. A plurality of wiring boards 14 a made of metal (aluminum in this embodiment) and extending in a flat plate shape are bonded to the bonding surface 12 c of the heat exchange member 12 by an adhesive sheet 15. In the present embodiment, a wiring layer 14 as a first wiring layer is formed by the plurality of wiring boards 14a.

  A pair of semiconductor elements 22 including an n-type semiconductor element 22n and a p-type semiconductor element 22p as electronic components is soldered (mounted) to each wiring board 14a. In each of the semiconductor elements 22n and 22p of each semiconductor element pair 22, a wiring board 24a extending in a flat plate shape made of aluminum is soldered at each end opposite to the end where the wiring board 14a is soldered. Has been. In the present embodiment, each wiring board 24 a electrically connects the n-type semiconductor element 22 n in one semiconductor element pair 22 and the p-type semiconductor element 22 p in the other semiconductor element pair 22. Soldered (mounted). That is, in the Peltier module 21 of this embodiment, a plurality of n-type semiconductor elements 22n and a plurality of p-type semiconductor elements 22p are connected in series and alternately, such as n-type → p-type → n-type. Has been.

  In the present embodiment, the wiring layer 24 as the second wiring layer is formed by the plurality of wiring boards 24a. In the present embodiment, one thermoelectric conversion element (Peltier element) is formed by the wiring layer 14 and the semiconductor element pair 22 (semiconductor elements 22n, 22p), and a plurality of thermoelectric conversions are performed by the wiring board 24a (wiring layer 24). It can also be understood that a thermoelectric conversion element group in which elements are connected in series is formed. The wiring layer 24 is bonded to the bonding surface 25 c of the heat exchange member 25 by an adhesive sheet 26 having the same configuration as the adhesive sheet 15. The heat exchange member 25 has the same material and configuration as the heat exchange member 12, and has a configuration in which a plurality of protrusions 25 b are arranged in parallel on the base portion 25 a in the same manner as the heat exchange member 12. In the present embodiment, the heat exchange member 12 is a first heat exchange member, and the heat exchange member 25 is a second heat exchange member.

Next, a method for manufacturing the Peltier module 21 will be described.
First, the heat exchange members 12 and 25 are injection molded, and the molded heat exchange members 12 and 25 are fired to obtain the heat exchange members 12 and 25 (heat exchange member forming step). Next, the adhesive sheet 15 is laminated on the adhesive surface 12c of the heat exchange member 12, and the wiring layer 14 (each wiring board 14a) is further laminated on the laminated adhesive sheet 15 (first laminating step). Thereafter, the laminate of the heat exchange member 12, the adhesive sheet 15, and the wiring layer 14 is heated with a jig while being heated at 200 ° C., and the heat exchange member 12 and the wiring layer 14 are thermocompression bonded (adhered) with the adhesive sheet 15 ( First thermocompression bonding step).

  Similarly, the adhesive sheet 26 is laminated on the adhesive surface 25c of the heat exchange member 25, and the wiring layer 24 (each wiring board 24a) is further laminated on the laminated adhesive sheet 26 (second laminating step). Thereafter, the laminate of the heat exchange member 25, the adhesive sheet 26, and the wiring layer 24 is heated with a jig while being heated at 200 ° C., and the heat exchange member 25 and the wiring layer 24 are thermocompression bonded (adhered) with the adhesive sheet 26 ( Second thermocompression bonding step). Note that the first and second thermocompression bonding steps are performed in an air atmosphere (at normal pressure and in air).

  Subsequently, the wiring layer 14 bonded to the heat exchanging member 12 and the wiring layer 24 bonded to the heat exchanging member 25 are stacked so as to sandwich the semiconductor elements 22n and 22p, and each semiconductor is reflowed. The elements 22n and 22p are soldered (soldering process). This soldering step is performed in a reducing atmosphere by heating to, for example, 250 ° C. for 30 minutes.

Next, the operation of the Peltier module 21 will be described.
In the Peltier module 21, one of the wiring layers 14 and 24 is used as a heat generation (heating) side wiring layer due to the Peltier effect generated by energizing the semiconductor elements 22 n and 22 p. The other wiring layer can be a heat absorption (cooling) side wiring layer. That is, the Peltier module 21 of the present embodiment can heat the heat exchange medium with one of the heat exchange members 12 and 25 while cooling the heat exchange medium with the other heat exchange member. . Thus, in this embodiment, each semiconductor element pair 22 (semiconductor elements 22n and 22p) is thermally coupled to the heat exchange members 12 and 25.

Therefore, according to the second embodiment, in addition to the effects (1) to (8) in the first embodiment, the following effects can be obtained.
(9) In the present embodiment, heat exchange can be performed from a plurality (two) of heat exchange members 12 and heat exchange members 25. And even if it is the Peltier module 21 containing the several heat exchange members 12 and 25 to which the wiring layer was respectively provided, it can manufacture simply, suppressing that heat exchange performance falls.

  (10) In each semiconductor element pair 22, the semiconductor elements 22n and 22p are soldered to the wiring layers 14 and 24 so as to be in series. Therefore, heating and cooling by the Peltier effect can be performed by energizing the semiconductor elements 22n and 22p.

  (11) In particular, in this embodiment, since the wiring layers can be applied directly and simply to the heat exchange members 12 and 25 using the adhesive sheets 15 and 26, the number of members constituting the Peltier module 21 Manufacturing costs can be reduced.

The above embodiments may be modified as follows.
In the first embodiment, the power module 11 with the case 13 omitted is arranged so that the heat exchange members 12 face each other, and the cases are assembled so as to cover the sides of the heat exchange members 12. May be. With this configuration, it is possible to form a power module in which the power elements 16 are mounted on both sides.

  In the first embodiment, a plurality of wiring layers 14 may be bonded onto the bonding surface 12 c of the heat exchange member 12. Alternatively, one or more power elements 16 may be soldered to one or more wiring layers 14 bonded on the heat exchange member 12.

In the first embodiment, the case 13 may be omitted, and in the second embodiment, a case may be disposed on at least one of the heat exchange members 12 and 25.
(Circle) in the said 2nd Embodiment, it is good also as a structure which abbreviate | omitted any one among the heat exchange members 12 and 25. FIG.

  (Circle) in each said embodiment, the heat exchange member 12 and the heat exchange member 25 may change material. For example, aluminum oxide (alumina) having a thermal expansion coefficient of 7 ppm / K, silicon nitride having a thermal expansion coefficient of 3 ppm / K, or the like may be used.

  In the above embodiments, solders having different melting points may be used. For example, a solder having a melting point of 183 ° C. made of tin (Sn) -zinc (Zn) -bismuth (Bi) may be used. That is, solder having a melting point lower than the thermal decomposition temperature of the resin material constituting the adhesive sheets 15 and 26 may be used.

In the above embodiments, the thickness t1 of the adhesive sheets 15 and 26 may be changed.
In each of the above embodiments, the resin material used for the adhesive sheet may be a resin material that is a different thermosetting resin instead of the epoxy resin.

In each of the above embodiments, instead of the adhesive sheets 15 and 26, an adhesive as a paste or liquid bonding material in which metal nanofillers are dispersed may be used.
In each of the above embodiments, decanoic acid, which is a kind of carboxylic acid, was chemically bonded to the surface of the metal nanofiller. Instead of decanoic acid, for example, 2-ethylhexanoic acid, n-octanoic acid, dodecanoic acid, Tridecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, oleic acid, linoleic acid, or linolenic acid may be chemically bonded.

  In the above embodiments, the organic molecule that is chemically bonded to the surface of the metal nanofiller may be appropriately changed to an organic molecule having a functional group different from the carboxyl group. Other functional groups include, for example, phenol groups. In addition, the carboxylic acid which has a carboxyl group has good compatibility with an epoxy resin, and what is necessary is just to use suitably the organic molecule which has a kind of functional group suitable for the resin material which comprises the adhesive sheets 15 and 26 (joining material).

In each of the above embodiments, the adhesive sheets 15 and 26 (bonding material) may contain a plurality of types of metal nanofillers having different functional groups that modify the surface of the metal nanofiller.
In each of the above embodiments, the metal nanofiller blended in the adhesive sheets 15 and 26 (joining material) is chromium (Cr), iron (Fe), cobalt (Co), copper (Cu), zinc (Zn), silver (Ag), tin (Sn), platinum (Pt), or gold (Au) may be used. Moreover, the adhesive sheets 15 and 26 (bonding material) may contain a plurality of types of metal nanofillers made of different metals.

  In each of the above embodiments, the adhesive sheets 15 and 26 (joining material) only need to include metal nanofillers whose surfaces are modified with functional groups, and are configured to include metal nanofillers whose surfaces are not modified. It may be.

In the above embodiments, the entire surface of the metal nanofiller may not be modified with a functional group.
In each of the above embodiments, the power element 16 and the semiconductor elements 22n and 22p are mounted on the wiring layer by soldering, but may be mounted by different methods. For example, a conductive adhesive, a conductive paste, a metal nanoparticle paste, or the like may be used.

  DESCRIPTION OF SYMBOLS 11 ... Power module (electronic device), 12 ... Heat exchange member (1st heat exchange member), 14 ... Wiring layer (1st wiring layer), 14a ... Wiring board, 15 ... Adhesive sheet (joining material), 16 ... Power element (electronic component), 17 ... Solder, 21 ... Peltier module (electronic device), 22 ... Semiconductor element pair, 22n ... n-type semiconductor element (electronic component), 22p ... p-type semiconductor element (electronic component), 24 ... wiring layer (second wiring layer), 24a ... wiring board, 25 ... heat exchange member (second heat exchange member), 26 ... adhesive sheet (bonding material).

Claims (5)

A heat exchange member made of an insulating material;
A wiring layer bonded to the heat exchange member by a bonding material containing inorganic fine particles whose surface is modified with a functional group, and a resin material;
An electronic device comprising: an electronic component mounted on the wiring layer and thermally coupled to the heat exchange member.   The electronic device according to claim 1, wherein the bonding material is an adhesive sheet formed in a sheet shape. The electronic component is mounted on the wiring layer by soldering,
The electronic device according to claim 1, wherein a thermal decomposition temperature of the resin material constituting the bonding material is higher than a melting point of the solder. The heat exchange member includes a first heat exchange member and a second heat exchange member,
The wiring layer includes a first wiring layer bonded to the first heat exchange member, and a second wiring layer bonded to the second heat exchange member,
The electronic device according to any one of claims 1 to 3, wherein the electronic component is mounted on the first wiring layer and the second wiring layer. The electronic component includes an n-type semiconductor element and a p-type semiconductor element,
The electronic device according to claim 4, wherein the n-type semiconductor element and the p-type semiconductor element are mounted on the first wiring layer and the second wiring layer so as to be in series.

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