JP2012148327A - Joining device and method, and joined body - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a joining device and method which reduces the occurrence of voids caused by organic gas generated during heat melting or sintering.SOLUTION: The heating chamber 21 of a joining device 20 is kept at a temperature lower than the boiling point of organic solvent contained in soldering paste 17. A heater 25 is made to touch the center of the element face 12a of a semiconductor device 12 for local heating. This produces a temperature gradient in the soldering paste 17 in which a temperature rise slows down toward each end 17b from the center of the soldering paste 17. Accordingly, the organic gas generated because of the vaporization of the organic solvent comes out into the atmosphere from each end 17b of the soldering paste 17 as part adjoining the atmosphere.

Description

  The present invention relates to a joining apparatus, a joining method, and a joined body joined by the joining method.

  There is known a bonding material in which a metal powder is mixed with an organic solvent so that the organic solvent suppresses contact between the metal powders to form a paste. After this bonding material is applied to a material to be bonded, the material to be bonded is bonded by heating, melting, or sintering. When heating of the bonding material is started and the temperature of the bonding material reaches the boiling point of the organic solvent, the organic solvent is vaporized and becomes an organic gas, and then comes out of the bonding material. Contact. When the heating is further continued, the metal powder is melted or sintered, and then cooled, whereby the materials to be joined are joined.

  By the way, if the metal powder comes into contact before the organic gas is completely removed from the bonding material, the organic gas is trapped in the bonding material. It is known that if the material to be bonded is bonded while the organic gas is confined in the bonding material, it causes a void. Therefore, in Patent Document 1, the bonding material is preheated to vaporize the organic solvent, and then the bonding material is melted and bonded.

JP 2007-44754 A

  However, the method described in Patent Document 1 uniformly heats the whole in the preheating step. For this reason, the organic solvent of the part (joining material outer peripheral part) exposed to atmosphere in a joining material vaporizes early. That is, the metal powder closer to the outer peripheral portion of the bonding material comes into contact more quickly, and the atmosphere and the inside of the bonding material are blocked by the contacted metal powder. As a result, since the organic gas generated from the inside of the bonding material is difficult to escape into the atmosphere, voids are generated by the organic gas remaining inside the bonding material. In addition, by solidifying the metal powder after melting it at a temperature higher than the melting point of the metal powder, even when joining with a joining material that joins the materials to be joined, the organic gas confined in the joining material is similarly retained. The resulting void is generated.

  The present invention has been made in view of such problems of the prior art, and an object thereof is a bonding apparatus capable of reducing the generation of voids caused by organic gas vaporized during heating, melting, or sintering. The present invention provides a bonding method and a bonded body bonded by the bonding method.

  In order to solve the above-mentioned problems, the invention according to claim 1 is in contact with the atmosphere in a joining apparatus for joining materials to be joined by heating, melting, or sintering a joining material obtained by mixing an organic solvent with metal powder. The gist of the invention is that it includes an adjusting means for adjusting the temperature of the atmosphere adjacent portion of the bonding material to a temperature lower than the boiling point of the organic solvent.

  According to the present invention, since the temperature of the atmosphere adjacent portion in contact with the atmosphere can be adjusted to a temperature lower than the boiling point of the organic solvent, the organic solvent in the atmosphere adjacent portion can be vaporized last. Since the organic gas generated with the heating of the bonding material can escape into the atmosphere from the adjacent portion of the atmosphere, the organic gas does not remain inside the bonding material, and generation of voids can be reduced.

The gist of the invention according to claim 2 is that, in the bonding apparatus according to claim 1, the adjusting means includes a heating means for performing local heating.
According to the present invention, when the bonding material is locally heated, a temperature gradient is generated in the bonding material so that the temperature rises slowly in the direction away from the heating unit, and the organic material is earlier in the portion closer to the heating unit. The solvent evaporates. For this reason, the escape path of the organic gas is created in a direction away from the heating means, and the organic gas can be pushed out from the atmosphere adjacent portion located in the direction away from the heating means. As a result, the organic gas can be more reliably prevented from remaining in the bonding material.

The gist of a third aspect of the present invention is the bonding apparatus according to the second aspect, wherein the heating means is arranged so that the center of the material to be bonded can be heated.
According to the present invention, the distance from the heating means to the atmosphere adjacent portion is the shortest. For this reason, it is easy to raise the temperature of an atmosphere adjacent part, and it is efficient.

  According to a fourth aspect of the present invention, in the joining apparatus according to any one of the first to third aspects, the adjusting unit includes a refrigerant supply unit that supplies a refrigerant to the atmosphere adjacent portion. Is the gist.

According to the present invention, no matter how the bonding material is heated, the temperature of the atmosphere adjacent portion can be adjusted to be lower than the boiling point of the organic solvent by cooling the atmosphere adjacent portion.
According to a fifth aspect of the present invention, there is provided a bonding method of bonding a material to be bonded by heating, melting, or sintering a bonding material obtained by mixing an organic solvent with metal powder, and at least one of the bonding materials in contact with an atmosphere. The gist of the invention is to have a temperature adjusting step of adjusting the temperature of the atmosphere adjacent portion so that the atmosphere adjacent portion which is a part is finally melted or sintered.

  According to the present invention, since the temperature can be adjusted so that the atmosphere adjacent portion, which is a portion in contact with the atmosphere in the bonding material, is finally melted or sintered, the organic gas generated with the heating of the bonding material is It is possible to escape from the atmosphere adjacent portion into the atmosphere. For this reason, organic gas does not remain inside the bonding material, and generation of voids can be reduced.

  The gist of a sixth aspect of the present invention is the bonding method according to the fifth aspect, wherein, in the temperature adjusting step, heating is performed so as to diffuse heat toward the atmosphere adjacent portion of the bonding material.

  According to the present invention, the bonding material generates a temperature gradient in which the temperature rise is delayed toward the atmosphere adjacent portion, and the atmosphere adjacent portion is finally melted or sintered. And it can prevent that organic gas remains in a joining material more reliably by pushing out organic gas from an atmosphere adjacent part.

The gist of the invention according to claim 7 is that, in the joining method according to claim 6, the center of the material to be joined is heated in the temperature adjusting step.
According to the present invention, the same effect as that of the third aspect of the invention can be attained.

  The invention according to claim 8 is the bonding method according to any one of claims 5 to 7, wherein, in the temperature adjustment step, the temperature of the atmosphere adjacent portion is a temperature lower than the boiling point of the organic solvent. The main point is to cool it.

According to the present invention, the same effect as in the fourth aspect is obtained.
The invention according to claim 9 is a joining method according to any one of claims 5 to 8, wherein a joining material formed by mixing an organic solvent with metal powder interposed between the materials to be joined is used. The gist of the present invention is a joined body that is heated, melted, or sintered.

  The bonded body of the present invention has high bonding reliability because generation of voids inside the bonding material due to organic gas is reduced.

  According to the present invention, it is possible to reduce the generation of voids caused by the organic gas vaporized during heating and melting or sintering.

The longitudinal cross-sectional view of a semiconductor module. (A) And (b) is the schematic of the joining apparatus in 1st Embodiment. The effect | action figure of the joining apparatus in 1st Embodiment. Schematic of the joining apparatus in 2nd Embodiment. The effect | action figure of the joining apparatus in 2nd Embodiment. Schematic of the joining apparatus in 3rd Embodiment. The effect | action figure of the joining apparatus in 3rd Embodiment.

(First embodiment)
A first embodiment embodying the present invention will be described below with reference to FIGS.
As shown in FIG. 1, a semiconductor module 10 as a bonded body includes a circuit board 11 as a bonded material, a semiconductor element 12 as a bonded material bonded to one surface of the circuit board 11, and a heat sink 13. It is configured. The circuit board 11 is formed by bonding metal plates 15 and 16 to both surfaces of the ceramic substrate 14. The ceramic substrate 14 is made of, for example, aluminum nitride, alumina, silicon nitride, or the like. The metal plate 15 functions as a wiring layer, and is formed of, for example, aluminum (pure aluminum and aluminum alloy), copper, or the like. The semiconductor element 12 is joined to the metal plate 15 by soldering. The symbol “H” indicates a solder layer. The semiconductor element 12 is made of an IGBT or a diode. The metal plate 16 functions as a bonding layer for bonding the ceramic substrate 14 and the heat sink 13 and is made of, for example, aluminum or copper. The heat sink 13 is bonded to the metal plate 16.

  In such a semiconductor module 10, the solder paste 17 as a bonding material interposed between the circuit board 11 (metal plate 15) and the semiconductor element 12 is heated using the bonding apparatus 20 shown in FIG. The solder layer H is formed by being melted and soldered by solidification after melting.

  The joining apparatus 20 shown in FIG. 2A is provided with a heating chamber 21 that forms a closed space that is closed with respect to the outside of the apparatus. In the lower part of the heating chamber 21, a conveying device 22 is laid for placing the soldering object 30 before melting the solder into the heating chamber 21 and positioning the soldering target object 30 at the heat treatment position. In addition, a heater 25 as a heating means for melting the solder paste 17 is supported by a support 26 on the upper portion of the heating chamber 21.

  As shown in FIG. 2B, the heater 25 of the present embodiment is formed in a rod shape having a heat radiation surface 25a that is circular in plan view. The surface area of the heat radiating surface 25 a is formed smaller than the surface area of the semiconductor element 12 constituting the semiconductor module 10. The surface area of the semiconductor element 12 referred to here is the surface area of the element surface 12a when viewed in plan while being placed on the solder paste 17 applied to the metal plate 15, and the element surface 12a is a metal surface. This is the surface facing the bonding surface 12b with the plate 15.

  The support 26 that supports the heater 25 is provided with an operating mechanism (not shown) for moving the heat radiating surface 25 a of the heater 25 to and from the element surface 12 a of the semiconductor element 12. In the present embodiment, as shown in FIG. 2A, the heater 25 and the support 26 are disposed so as to be positioned immediately above the semiconductor element 12 when the soldering object 30 is positioned at the heat treatment position. . For this reason, the direction in which the heat radiating surface 25a is moved toward and away from the element surface 12a is the upward direction (the direction of the separating operation) and the downward direction (the approaching direction).

  Further, in the present embodiment, the heat treatment of the solder paste 17 by the heater 25 causes the heat radiation surface 25a of the heater 25 to contact (contact) the element surface 12a of the semiconductor element 12 as the heating surface, as shown in FIG. Done. In the present embodiment, as described above, the surface area of the heat radiating surface 25 a of the heater 25 is configured to be smaller than the surface area of the element surface 12 a of the semiconductor element 12. For this reason, in the state (heated state) in which the heat radiating surface 25a is in contact with the element surface 12a, heat from the heater 25 is transmitted to a local part (a part) of the element surface 12a. Therefore, the heater 25 of this embodiment functions as a heating unit that performs local heating. In addition, a control controller 28 is provided outside the heating chamber 21 as a control device that performs various controls such as the operation of the transfer device 22, the ON / OFF operation of the heater 25, and the operation control of the support 26. . The operation mechanisms of the transport device 22, the heater 25, and the support 26 are electrically connected to the controller 28. Then, the controller 28 executes the various controls according to a control program prepared in advance.

Next, the joining method which joins the semiconductor element 12 and the metal plate 15 using the joining apparatus 20 of this embodiment is demonstrated.
First, the soldering object 30 is prepared in a place (separate room) different from the heating chamber 21 of the bonding apparatus 20. Specifically, the solder paste 17 is applied to the mounting portion of the semiconductor element 12 on the circuit board 11, and the semiconductor element 12 is placed on the applied solder paste 17. Thereby, the preparation of the soldering object 30 is completed, and this preparation work becomes the paste application process.

  The solder paste 17 is a paste obtained by adding an organic solvent to solder powder as metal powder. As the organic solvent, a solvent which has a boiling point of room temperature or higher and can be thickened and adjusted in viscosity as a paste and is vaporized at a temperature lower than the melting temperature of the mixed metal powder is used. For example, methanol, ethanol, octanol or the like is used.

Next, the prepared soldering object 30 is transferred to the heating chamber 21 by the transfer device 22.
As shown in FIG. 2B, the soldering object 30 on the transport device 22 is arranged with the heat radiation surface 25 a of the heater 25 at the center of the element surface 12 a of the semiconductor element 12 by driving the transport device 22. Position so that. In this state, when the heat radiating surface 25a moves toward the element surface 12a by the approaching operation of the support 26, it can be locally contacted near the center of the element surface 12a. In addition, the heating chamber 21 into which the soldering object 30 is put is a closed space. In addition, the space (in the atmosphere) of the heating chamber 21 is less than the boiling point of the organic solvent contained in the solder paste 17.

  When the heat radiating surface 25a is brought into contact with the element surface 12a, the solder paste 17 is heated via the semiconductor element 12 by heat from the heat radiating surface 25a. This heating operation is a heating process. The temperature of the heater 25 (heat radiation surface 25a) is set as appropriate depending on the bonding material used, but is set to a temperature at which the solder paste 17 can be melted in the heating process of the present embodiment.

  When the heat of the heater 25 is applied as in the heating process of the present embodiment, the heat from the heat radiating surface 25a is concentrated on the center of the element surface 12a. Then, heat is concentrated on the center of the bonding surface 12b by heat applied to the element surface 12a. For this reason, when the solder paste 17 is heated, the temperature rises earlier in the central portion 17a (shown in FIG. 3), which is the portion near the heater 25 in the solder paste 17. On the other hand, the temperature of the solder paste 17 increases more slowly as the part is separated from the central part 17a. That is, since heat is propagated so that the solder paste 17 diffuses in all directions from the central portion 17a, each end portion 17b (four end surfaces shown in FIG. 2B) of the solder paste 17 The rise is slowest. In the present embodiment, the end portion 17b becomes an atmosphere adjacent portion in contact with the atmosphere, and the operation of locally heating the center of the element surface 12a by the heater 25 is the temperature adjustment step so that the atmosphere adjacent portion is finally melted. . Thereby, the solder paste 17 is melted with a temperature gradient in which the temperature rise is slowed toward the end portions 17b. The temperature of the heater 25 is preferably such that the temperature of the end portion 17b of the semiconductor element 12 shown in FIG. 2B is less than 200 ° C. and the temperature difference from the heated central portion 17a is 40 ° C. . FIG. 3 shows a state where a temperature gradient is formed in the solder paste 17 by the density of black spots, and the higher the density of black spots, the higher the temperature.

  When the temperature of the solder paste 17 reaches the boiling point of the organic solvent as the heater 25 is heated, the organic solvent is vaporized and escapes to the atmosphere as an organic gas. In the heating process of the present embodiment, the temperature of the central portion 17a of the solder paste 17 is the highest, so that the organic solvent gradually evaporates from the central portion 17a toward each end portion 17b. In the portion where the organic solvent is vaporized, the solder powder comes into contact and the organic gas cannot pass through, so that the organic gas is gradually pushed out from the central portion 17a toward the end portion 17b. Then, the organic gas pushed out from the central portion 17a escapes from the end portion 17b into the heating chamber 21 (atmosphere), and finally the organic solvent in the end portion 17b is vaporized.

  According to the heating process of the present embodiment, since a temperature gradient is formed by local heating of the heater 25, the escape path of the vaporized organic gas is made toward the end portion 17b as a portion in contact with the atmosphere of the heating chamber 21. become. As a result, even if the solder paste 17 is melted, the organic gas does not remain therein and is discharged into the heating chamber 21. That is, it is possible to suppress the residual organic gas that can be a cause of voids. In the present embodiment, the end portion 17b serves as an atmosphere adjacent portion, and an adjusting unit is configured to adjust the temperature of the end portion 17b to a temperature lower than the boiling point of the organic solvent by the heater 25 that performs local heating.

  Thereafter, when the solder paste 17 is completely melted, it is cooled until the melted solder is solidified (cooling step). The molten solder may be cooled by natural cooling or by forced cooling for supplying a coolant. The molten solder is solidified by being cooled below the melting temperature, and joins the metal plate 15 and the semiconductor element 12.

According to the above embodiment, the following effects can be obtained.
(1) The space in the heating chamber 21 is less than the boiling point of the organic solvent contained in the solder paste 17. For this reason, each edge part 17b of the solder paste 17 is cooled by the atmosphere, so that the atmosphere adjacent part is finally melted. For this reason, the organic gas generated with the heating of the solder paste 17 can escape from the end portions 17b, and the organic gas remaining in the solder paste 17 is reduced.

  (2) The heater 25 locally heats the center of the element surface 12 a of the semiconductor element 12. Due to the local heating of the heater 25, a temperature gradient is generated in the solder paste 17 so that the temperature rise is delayed from the central portion 17a toward each end portion 17b. For this reason, the escape path of the vaporized organic gas is created toward the end portion 17 b that is a part in contact with the atmosphere of the heating chamber 21, and the organic gas can be discharged more reliably into the heating chamber 21.

(3) The organic gas accompanying the heating of the solder paste 17 can be discharged at the stage of melting the solder paste 17. For this reason, compared with the joining method described in Patent Document 1, the preheating step can be omitted. Therefore, the process is simplified and the manufacturing cost is reduced.
(Second Embodiment)
Next, a second embodiment embodying the present invention will be described with reference to FIGS. In the embodiments described below, the same reference numerals are given to the same configurations as those in the embodiments already described, and the overlapping description is omitted or simplified.

  As shown in FIG. 4, the heating chamber 21 in the present embodiment is soldered with a refrigerant from a refrigerant supply source 43 (shown as “supply source” in the figure) disposed outside the heating chamber 21 during the heating process. An annular refrigerant pipe 40 for supplying a predetermined portion of the object 30 is disposed. Dry air supplied from a refrigerant supply source 43 flows in the refrigerant pipe 40. Discharge holes 40 a for discharging dry air to the outside of the refrigerant pipe 40 are formed in a plurality of places (four places in the present embodiment) in the inner peripheral portion of the refrigerant pipe 40. The refrigerant conduit 40 is arranged so that dry air discharged from each discharge hole 40a is blown to the peripheral edge (end 17b) of the solder paste 17 when the solder paste 17 is heated (during the heating process). . Specifically, the refrigerant pipe 40 is supported by the support 42 via a plurality of support columns 41. Each support tool 42 is provided with an operation mechanism (not shown) for making the soldering object 30 contact and separate. In the present embodiment, as shown in FIGS. 4 and 5, the refrigerant conduit 40 is arranged so that each discharge hole 40 a is positioned around the solder paste 17 when the soldering object 30 is positioned at the heat treatment position. Has been. For this reason, the direction in which the refrigerant pipe 40 is moved toward and away from the solder paste 17 is the upper direction (the direction of the separating operation) and the lower direction (the approach direction).

  In addition, a heater 27 as a heating device for melting the solder paste 17 is disposed in the heating chamber 21. The heater 27 of the present embodiment is a non-contact type that heats the entire space of the heating chamber 21 (the heat radiating surface is not brought into contact with the semiconductor element 12). In the present embodiment, the solder paste 17 is melted by raising the atmospheric temperature in the heating chamber 21 by the heater 27. Various controls such as the operation of the transfer device 22, the ON / OFF operation of the heater 27, the operation control of the support tool 42, and the supply / stop of dry air from the refrigerant supply source 43 are performed outside the heating chamber 21. A control controller 29 is provided as a control device. The operation mechanisms of the transport device 22, the heater 27, the refrigerant supply source 43, and the support tool 42 are electrically connected to the controller 29. Then, the controller 29 executes the above various controls according to a control program prepared in advance.

  Next, the joining method which joins the semiconductor element 12 and the metal plate 15 using the joining apparatus 20 of this embodiment is demonstrated. In addition, the soldering target 30 is prepared through a paste application | coating process similarly to 1st Embodiment.

  In the soldering object 30 put into the heating chamber 21, the solder paste 17 is melted at the ambient temperature heated by the heater 27. On the other hand, the solder paste 17 is cooled by dry air discharged from the refrigerant pipe 40 disposed around the solder paste 17. In the present embodiment, the temperature of the end portion 17b of the solder paste 17 is cooled to a temperature lower than the boiling point of the organic solvent by the dry air. In the present embodiment, the operation of heating while cooling the end portion 17b as the atmosphere adjacent portion by the refrigerant pipe 40 is the temperature adjustment step.

FIG. 5 shows a state where a temperature gradient is formed in the solder paste 17 by the density of black spots, and the higher the density of black spots, the higher the temperature.
When the end portion 17b of the solder paste 17 is cooled as in the heating process of the present embodiment, the temperature rises more slowly as the portion of the solder paste 17 is closer to the end portion 17b. That is, the temperature of the central portion 17a of the solder paste 17 rises faster than the end portion 17b. As a result, the solder paste 17 is melted with a temperature gradient in which the temperature rise is slowed toward the end portions 17b, as in the first embodiment. As a result, the organic solvent contained in the solder paste 17 is gradually vaporized from the central portion 17a toward the end portion 17b. Then, the organic gas pushed out from the central portion 17a escapes from the end portion 17b into the heating chamber 21 (atmosphere), and finally the organic solvent in the end portion 17b is vaporized.

According to this embodiment, in addition to the effects (1) and (3) of the first embodiment, the following effects can be obtained.
(4) By cooling the solder paste 17 by the refrigerant pipe 40, even if the atmospheric temperature in the heating chamber 21 rises, the temperature rise slows from the central portion 17a of the solder paste 17 toward the end portion 17b. A temperature gradient can be generated. That is, even if the solder paste 17 is heated evenly, the organic gas can be extracted from the adjacent portion of the atmosphere.

  (5) The end portion 17b can be cooled to a temperature lower than the boiling point of the organic solvent during the heating process by the refrigerant pipe 40. For this reason, organic gas can be more reliably extracted by keeping the temperature of the edge part 17b below the boiling point of an organic solvent until organic gas has fully escaped.

(Third embodiment)
Next, a third embodiment embodying the present invention will be described with reference to FIGS.
As shown in FIG. 6, a control device 50 is connected to the electrode 12 c of the semiconductor element 12. In this embodiment, a heating process for melting the solder paste 17 is performed as described below.

In FIG. 7, a state in which a temperature gradient is formed in the solder paste 17 is indicated by the density of black spots, and the higher the density of black spots, the higher the temperature.
The control device 50 drives the semiconductor element 12. Then, the surface of the semiconductor element 12 generates heat as the semiconductor element 12 is driven. This heat generation is propagated to the solder paste 17 through the semiconductor element 12. Thereby, in the heating process of the present embodiment, the solder paste 17 is melted by the heat generated by driving the semiconductor element 12.

  At this time, since the surface of the semiconductor element 12 generates heat uniformly, the solder paste 17 is also uniformly heated by the heat transmitted to the solder paste 17. That is, in the solder paste 17, the temperature is likely to increase as the portion is closer to the semiconductor element 12. On the other hand, in the heating process of the present embodiment, a refrigerant is supplied to the heat sink 13. For this reason, the temperature of the solder paste 17 is less likely to increase in the portion closer to the heat sink 13 by being cooled by supplying the coolant. Thereby, in the heating process of the present embodiment, a temperature gradient is formed in the solder paste 17 so that the temperature rise is slowed from the bonding surface 12b side of the semiconductor element 12 toward the metal plate 15. In the present embodiment, the operation of heating while the solder paste 17 is cooled by the heat sink 13 is the temperature adjustment step. Therefore, the organic solvent contained in the solder paste 17 is gradually vaporized from the bonding surface 12 b side toward the metal plate 15. The pushed organic gas escapes from the metal plate 15 side into the heating chamber 21 (atmosphere), and finally the organic solvent at the end portion (atmosphere adjacent portion) on the metal plate 15 side is vaporized. In the present embodiment, the electrode 12c, the control device 50, and the heat sink 13 constitute an adjustment unit, and the heat sink 13 constitutes a refrigerant supply unit.

According to the present embodiment, the same effects as the effects (1), (3), and (4) of the first and second embodiments can be obtained.
In addition, you may change embodiment as follows.

In the first and second embodiments, a laser or a soft beam may be used as the heating unit.
In the first, second, and third embodiments, the bonding material may be another bonding material that is bonded at a temperature higher than the boiling point of the organic solvent contained in the bonding material, such as silver paste.

In the first, second, and third embodiments, the atmosphere adjacent portion may be other than the end portion 17b.
In the first, second, and third embodiments, the bonding material may be bonded by sintering. In this case, it is more preferable to pressurize the objects to be joined at the time of sintering because the joining can be performed efficiently.

  In the first and second embodiments, the joined body may be other than the semiconductor module. In the heating process of each embodiment, the soldering object may be constituted by the semiconductor element 12 and the metal plate 15.

  (Circle) in 1st Embodiment, you may change the site | part of local heating. That is, a temperature gradient can be formed by setting at least one end 17b of the solder paste 17 (joining material) as an atmosphere adjacent portion and increasing the temperature toward the atmosphere adjacent portion. Therefore, heating may be performed by bringing the heater 25 into contact with the peripheral edge of one of the end portions 17b.

In the second embodiment, the number of discharge holes 40a may be changed.
In the second embodiment, the heater 27 may be the heater 25 of the first embodiment.

  In the third embodiment, cooling may be performed using dedicated refrigerant supply means (cooling device). For example, the refrigerant supply unit of the second embodiment may be used.

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor module, 11 ... Circuit board, 12 ... Semiconductor element, 12c ... Electrode, 13 ... Heat sink, 15 ... Metal plate, 17 ... Solder paste, 17a ... Center part, 17b ... End part, 20 ... Joining device, 25 ... Heater, 27 ... heater, 40 ... refrigerant line, 50 ... control device.

Claims (9)

A joining device for joining materials to be joined by heating, melting, or sintering a joining material obtained by mixing an organic solvent with metal powder,
A bonding apparatus comprising an adjusting means for adjusting a temperature of an atmosphere adjacent portion of the bonding material in contact with an atmosphere to a temperature lower than a boiling point of the organic solvent.   The bonding apparatus according to claim 1, wherein the adjusting unit includes a heating unit that performs local heating.   The said heating means is arrange | positioned so that the center of the said to-be-joined material can be heated, The joining apparatus of Claim 2 characterized by the above-mentioned.   The joining apparatus according to any one of claims 1 to 3, wherein the adjusting means includes a refrigerant supply means for supplying a refrigerant to the atmosphere adjacent portion. A joining method for joining materials to be joined by heating, melting, or sintering a joining material obtained by mixing an organic solvent with metal powder,
A bonding method comprising: a temperature adjusting step of adjusting the temperature of the atmosphere adjacent portion so that the atmosphere adjacent portion which is at least one portion of the bonding material in contact with the atmosphere is finally melted or sintered.   The bonding method according to claim 5, wherein in the temperature adjusting step, heating is performed so that heat is diffused toward the atmosphere adjacent portion of the bonding material.   The joining method according to claim 6, wherein in the temperature adjusting step, a center of the material to be joined is heated.   The joining method according to any one of claims 5 to 7, wherein, in the temperature adjusting step, the temperature of the atmosphere adjacent portion is cooled to a temperature lower than the boiling point of the organic solvent.   A bonded body obtained by heating and melting or sintering a bonding material obtained by mixing an organic solvent with metal powder interposed between bonded materials by the bonding method according to any one of claims 5 to 8. .

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