JP2012137484A - 三次元表面の計測装置及び方法 - Google Patents
三次元表面の計測装置及び方法 Download PDFInfo
- Publication number
- JP2012137484A JP2012137484A JP2011266969A JP2011266969A JP2012137484A JP 2012137484 A JP2012137484 A JP 2012137484A JP 2011266969 A JP2011266969 A JP 2011266969A JP 2011266969 A JP2011266969 A JP 2011266969A JP 2012137484 A JP2012137484 A JP 2012137484A
- Authority
- JP
- Japan
- Prior art keywords
- dimensional
- light
- fourier transform
- fourier
- transform image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 19
- 238000005259 measurement Methods 0.000 title description 5
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 230000003595 spectral effect Effects 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 230000001143 conditioned effect Effects 0.000 claims description 6
- 238000004441 surface measurement Methods 0.000 claims description 4
- 239000000284 extract Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000001360 synchronised effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 9
- 230000001788 irregular Effects 0.000 abstract description 5
- 230000009466 transformation Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 230000003750 conditioning effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011158 quantitative evaluation Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004651 near-field scanning optical microscopy Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】評価すべき三次元の微小凹凸面の上に溶液を介して溶液層定常化基板を載置する。レーザ照射部は、溶液層定常化基板を通して単一波長光のレーザ光を微小凹凸面に照射する。微小凹凸面から散乱及び回折した光を光学的にフーリエ変換したフーリエ変換像をフーリエ変換像取得部で取得する。このフーリエ変換像を、信号変換器により光強度分布として電気信号に光電変換する。この取得した光強度分布の波形を、基本波数及び少なくとも一つの高調波数に分解したそれぞれの波長とその振幅をスペクトル情報として抽出して、三次元の微小凹凸面の形状を評価する。
【選択図】 図1
Description
Claims (7)
- 単一波長光のレーザ光を照射するレーザ照射部と、
三次元の微小凹凸面の上に溶液を介して載置した溶液層定常化基板と、
前記微小凹凸面から散乱及び回折した光を光学的にフーリエ変換したフーリエ変換像を取得するフーリエ変換像取得部と、
このフーリエ変換像を光強度分布として、電気信号に光電変換する信号変換器と、
前記取得した光強度分布の波形を、基本波数及び少なくとも一つの高調波数に分解したそれぞれの波長とその振幅をスペクトル情報として抽出する演算器と、を備え、
この抽出したスペクトル情報により前記三次元の微小凹凸面の形状を評価することから成る三次元表面の計測装置。 - 前記三次元の微小凹凸面は、ウェハを研磨中の研磨パッドの表面である請求項1に記載の三次元表面の計測装置。
- 複数種類のコンディショナを用いてコンディショニングした研磨パッドの表面形状のフーリエ変換像をデータベース化し、かつ、研磨前後のウェハ厚を測定することにより得た研磨レートと前記データベース化したフーリエ変換像との相関を見出す請求項2に記載の三次元表面の計測装置。
- 前記溶液層定常化基板は、サファイア基板である請求項1に記載の三次元表面の計測装置。
- 前記レーザ照射部には、ファンクションジェネレータの出力を導くことによりパルス化したレーザ光を照射して、このパルス化レーザ光と、フーリエ変換像の取得を同期させた請求項1に記載の三次元表面の計測装置。
- 前記レーザ照射部は、単一波長光を発生させて照射するか、或いは、複数の波長を持った光発生機を用いて発生したレーザ光から、単一波長光を抽出して照射する請求項1に記載の三次元表面の計測装置。
- 三次元の微小凹凸面の上に溶液を介して載置した溶液層定常化基板を通して、単一波長のレーザ光を照射し、
前記微小凹凸面から散乱及び回折した光を光学的にフーリエ変換したフーリエ変換像を取得し、
このフーリエ変換像を光強度分布として電気信号に光電変換し、
前記光強度分布の波形を、基本波数及び少なくとも一つの高調波数に分解したそれぞれの波長とその振幅をスペクトル情報として抽出して、前記三次元の微小凹凸面の形状を評価することから成る三次元表面の計測方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011266969A JP5892591B2 (ja) | 2010-12-09 | 2011-12-06 | 三次元表面の計測装置及び方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010274566 | 2010-12-09 | ||
JP2010274566 | 2010-12-09 | ||
JP2011266969A JP5892591B2 (ja) | 2010-12-09 | 2011-12-06 | 三次元表面の計測装置及び方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012137484A true JP2012137484A (ja) | 2012-07-19 |
JP5892591B2 JP5892591B2 (ja) | 2016-03-23 |
Family
ID=46674997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011266969A Active JP5892591B2 (ja) | 2010-12-09 | 2011-12-06 | 三次元表面の計測装置及び方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5892591B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140111923A (ko) * | 2013-03-12 | 2014-09-22 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마 패드의 표면 성상 측정 장치 |
KR20140111924A (ko) * | 2013-03-12 | 2014-09-22 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마 패드의 표면 성상 측정 방법 |
JP2015174156A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社荏原製作所 | 研磨装置 |
WO2016111335A1 (ja) * | 2015-01-07 | 2016-07-14 | 株式会社 荏原製作所 | 研磨パッドの表面性状測定装置を備えたcmp装置 |
US9453725B2 (en) | 2013-02-14 | 2016-09-27 | Qso Interferometer Systems Ab | Method and apparatus for quantitative measurement of surface accuracy of an area |
JP2018151353A (ja) * | 2017-03-15 | 2018-09-27 | ファナック株式会社 | 計測装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6337205A (ja) * | 1986-07-31 | 1988-02-17 | Tokyo Seimitsu Co Ltd | 表面粗さ測定方法 |
JPH06347244A (ja) * | 1993-06-10 | 1994-12-20 | Tokyo Seimitsu Co Ltd | 表面粗さ測定方法及び装置 |
JPH09285955A (ja) * | 1996-04-23 | 1997-11-04 | Hitachi Ltd | 研磨方法及び研磨装置 |
JP2001223190A (ja) * | 2000-02-08 | 2001-08-17 | Hitachi Ltd | 研磨パッドの表面状態評価方法及びその装置とそれを用いた薄膜デバイスの製造方法及びその製造装置 |
JP2007027781A (ja) * | 1995-03-28 | 2007-02-01 | Applied Materials Inc | ポリッシングパッド |
-
2011
- 2011-12-06 JP JP2011266969A patent/JP5892591B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6337205A (ja) * | 1986-07-31 | 1988-02-17 | Tokyo Seimitsu Co Ltd | 表面粗さ測定方法 |
JPH06347244A (ja) * | 1993-06-10 | 1994-12-20 | Tokyo Seimitsu Co Ltd | 表面粗さ測定方法及び装置 |
JP2007027781A (ja) * | 1995-03-28 | 2007-02-01 | Applied Materials Inc | ポリッシングパッド |
JPH09285955A (ja) * | 1996-04-23 | 1997-11-04 | Hitachi Ltd | 研磨方法及び研磨装置 |
JP2001223190A (ja) * | 2000-02-08 | 2001-08-17 | Hitachi Ltd | 研磨パッドの表面状態評価方法及びその装置とそれを用いた薄膜デバイスの製造方法及びその製造装置 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9453725B2 (en) | 2013-02-14 | 2016-09-27 | Qso Interferometer Systems Ab | Method and apparatus for quantitative measurement of surface accuracy of an area |
KR101921763B1 (ko) * | 2013-03-12 | 2018-11-23 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마 패드의 표면 성상 측정 방법 |
KR20140111924A (ko) * | 2013-03-12 | 2014-09-22 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마 패드의 표면 성상 측정 방법 |
JP2014172153A (ja) * | 2013-03-12 | 2014-09-22 | Ebara Corp | 研磨パッドの表面性状測定方法 |
US8932883B2 (en) | 2013-03-12 | 2015-01-13 | Ebara Corporation | Method of measuring surface properties of polishing pad |
TWI593508B (zh) * | 2013-03-12 | 2017-08-01 | Ebara Corp | Surface characteristics of the polishing pad measuring device |
US10401285B2 (en) | 2013-03-12 | 2019-09-03 | Ebara Corporation | Apparatus for measuring surface properties of polishing pad |
JP2014172154A (ja) * | 2013-03-12 | 2014-09-22 | Ebara Corp | 研磨パッドの表面性状測定装置 |
KR101930966B1 (ko) * | 2013-03-12 | 2018-12-19 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마 패드의 표면 성상 측정 장치 |
KR20140111923A (ko) * | 2013-03-12 | 2014-09-22 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마 패드의 표면 성상 측정 장치 |
JP2015174156A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社荏原製作所 | 研磨装置 |
US9669515B2 (en) | 2014-03-13 | 2017-06-06 | Ebara Corporation | Polishing apparatus |
JPWO2016111335A1 (ja) * | 2015-01-07 | 2017-10-19 | 株式会社荏原製作所 | 研磨パッドの表面性状測定装置を備えたcmp装置 |
US10369675B2 (en) | 2015-01-07 | 2019-08-06 | Ebara Corporation | CMP apparatus having polishing pad surface property measuring device |
WO2016111335A1 (ja) * | 2015-01-07 | 2016-07-14 | 株式会社 荏原製作所 | 研磨パッドの表面性状測定装置を備えたcmp装置 |
JP2018151353A (ja) * | 2017-03-15 | 2018-09-27 | ファナック株式会社 | 計測装置 |
US10203201B2 (en) | 2017-03-15 | 2019-02-12 | Fanuc Corporation | Measurement device |
Also Published As
Publication number | Publication date |
---|---|
JP5892591B2 (ja) | 2016-03-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5892591B2 (ja) | 三次元表面の計測装置及び方法 | |
Guo et al. | Improvement of precision grinding performance of CVD diamond wheels by micro-structured surfaces | |
Darafon et al. | Characterization of grinding wheel topography using a white chromatic sensor | |
Yu et al. | Performance and modeling of paired polishing process | |
Yan et al. | Three-dimension surface characterization of grinding wheel using white light interferometer | |
Sun et al. | Investigating effect of conditioner aggressiveness on removal rate during interlayer dielectric chemical mechanical planarization through confocal microscopy and dual emission ultraviolet-enhanced fluorescence imaging | |
Doronin et al. | Limits of single crystal diamond surface mechanical polishing | |
Menapace et al. | MRF applications: measurement of process-dependent subsurface damage in optical materials using the MRF wedge technique | |
Sun et al. | Modelling and experimental study of roughness in silicon wafer self-rotating grinding | |
Tao et al. | Prediction and measurement for grinding force in wafer self-rotational grinding | |
US7988529B2 (en) | Methods and tools for controlling the removal of material from microfeature workpieces | |
Belure et al. | Development of super-smooth flat silicon mirror substrates using bowl-feed chemical-mechanical polishing | |
KR100940831B1 (ko) | 연마 방법과 연마 기구 | |
JP4379556B2 (ja) | 研磨方法および研磨装置 | |
Xie et al. | Evaluation on 3D micro-ground profile accuracy of micro-pyramid-structured Si surface using an adaptive-orientation WLI measurement | |
JP3395663B2 (ja) | 検出方法及び検出装置及び研磨装置及び研磨方法 | |
JP6607607B2 (ja) | 微粒子の3d位置特定装置及び特定方法 | |
Han et al. | Feasibility of a real-time method in determine the extent of pad break-in during copper chemical mechanical planarization | |
JP2023032894A (ja) | GaN基板の表面加工方法およびGaN基板の製造方法 | |
JP5051813B2 (ja) | レーザ光を用いた精密工具測定方法及びシステム | |
McDonald | Investigation of Grinding Wheel Wear Using a White Chromatic Sensor | |
Yan et al. | The application of three-dimensional surface parameters to characterizing grinding wheel topography | |
Prakasam et al. | A comparative surface roughness study of silicon wafer by laser speckle technique, atomic force microscopy and stylus profilometry | |
Xiao et al. | Analysis of subsurface damage during fabrication process and its removal | |
Khajornrungruang et al. | Optical Evanescent Field for Direct Observation of Sub-100nm Particle Motion on Glass Surface |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141120 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150918 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151006 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151022 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160126 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160218 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5892591 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |