JP2012136756A5

JP2012136756A5 -

Info

Publication number: JP2012136756A5
Application number: JP2010291234A
Authority: JP
Filing date: 2010-12-27
Publication date: 2014-01-09
Anticipated expiration: 2030-12-27

Description

上述した課題を解決するために、本発明の１つの側面は、互いに材料が異なるターゲットが取り付けられた２つのターゲットホルダーが配された真空容器内において、前記真空容器内に不活性ガス及び反応性ガスが導入された状態において、前記２つのターゲットを同時にスパッタリングすることで基板に前記２つのターゲットの材料の混合物を含有する膜を成膜する際に、前記２つのターゲットの各々への前記反応性ガスの供給量が異なることを特徴とする。
また、本発明の他の側面は、真空容器内に不活性ガス及び反応性ガスを導入し、アルミニウムターゲット及びチタンターゲットを同時にスパッタリングすることで基板にアルミニウムおよびチタンの混合物を含有する膜を成膜する際に、前記チタンターゲットへの前記反応性ガスの供給量が前記アルミニウムターゲットへの前記反応性ガスの供給量よりも多いことを特徴とする。 In order to solve the above-described problems, one aspect of the present invention is that, in a vacuum vessel in which two target holders to which targets of different materials are attached are arranged , an inert gas and a reactive property are contained in the vacuum vessel . When a film containing a mixture of materials of the two targets is formed on a substrate by simultaneously sputtering the two targets in a state where a gas is introduced, the reaction to each of the two targets It is characterized in that the supply amount of the characteristic gas is different.
In another aspect of the present invention, an inert gas and a reactive gas are introduced into a vacuum vessel, and a film containing a mixture of aluminum and titanium is formed on a substrate by simultaneously sputtering an aluminum target and a titanium target. In this case, the supply amount of the reactive gas to the titanium target is larger than the supply amount of the reactive gas to the aluminum target.

Claims

In a vacuum vessel in which two target holders to which targets of different materials are attached are arranged, the two targets are simultaneously sputtered in a state where an inert gas and a reactive gas are introduced into the vacuum vessel. Thus, when the film containing the mixture of the materials of the two targets is formed on the substrate, the supply amount of the reactive gas to each of the two targets is different.

In the sputtering, by supplying the amount of the reactive gas into each of the two respective targets are different, one of the two targets become poison mode, and the other metal mode of said two targets The sputtering method according to claim 1, wherein:

Sputtering method according to claim 2, wherein the introduction of the reactive gas only target the vicinity of the front Kipo Izunmodo.

4. The sputtering method according to claim 2 , wherein the inert gas is introduced in the vicinity of the target to be the metal mode. 5.

When forming a film containing a mixture of aluminum and titanium on a substrate by introducing an inert gas and a reactive gas into a vacuum vessel and simultaneously sputtering an aluminum target and a titanium target , the titanium target is added to the titanium target. A sputtering method, wherein a supply amount of the reactive gas is larger than a supply amount of the reactive gas to the aluminum target.

During the sputtering, the titanium target becomes poison mode sputtering method of claim 5, wherein the aluminum target is characterized in that has a metal mode.

The sputtering method according to claim 5, wherein the reactive gas is introduced only in the vicinity of the titanium target.

The sputtering method according to claim 5, wherein the inert gas is introduced in the vicinity of the aluminum target.

The sputtering method according to claim 5, wherein the reactive gas is nitrogen gas.