JP2012128193A - Microlens array and scan exposure device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a scan exposure device using a microlens array, which is capable of increasing the accuracy of an exposure pattern in overlay exposure by, even in the case of the occurrence of deviation of the exposure pattern from a reference pattern, detecting the deviation during exposure to be able to prevent displacement of the exposure pattern.SOLUTION: In a microlens array 2, hexagonal field stops 12 in inverted image formation positions are partially changed to circular stops 18a having an aperture area larger than that of the hexagonal field stops. In the scan exposure device, an exposure pattern of a mask 3 is projected on a substrate 1 by a plurality of microlens arrays 2. At this time, an image on the substrate 1 is detected by a line CCD camera, and a first layer pattern on the substrate is taken as a reference pattern to detect whether the exposure pattern of the mask 3 coincides with the reference pattern or not. In this case, the image on the substrate can be observed in a wide range because the circular stops have the aperture area larger than that of the hexagonal field stops.

Description

  The present invention relates to an exposure apparatus that exposes a mask pattern onto a substrate by a microlens array in which microlenses are two-dimensionally arranged, and a microlens array used therefor.

  A thin film transistor liquid crystal substrate, a color filter substrate, and the like form a predetermined pattern by overlaying and exposing a resist film or the like formed on a glass substrate several times. These exposed substrates may expand and contract during the film formation process, and the lower layer pattern for overlay exposure may differ from the designed pitch depending on manufacturing conditions (exposure apparatus characteristics and temperature conditions). is there. In such overlay exposure, if a change in the pitch of the exposure position occurs, the change in the pitch has to be absorbed by correcting the magnification on the exposure apparatus side. That is, when the dimensional variation of the substrate to be exposed occurs, it is necessary to arrange the image at the center of a predetermined position on the substrate of the pitch after the variation by adjusting the magnification of the image for the deviation of the pitch. .

  On the other hand, recently, a scan exposure apparatus using a microlens array in which microlenses are two-dimensionally arranged has been proposed (Patent Document 1). In this scan exposure apparatus, a plurality of microlens arrays are arranged in one direction, and a substrate and a mask are moved relative to the microlens array and the exposure light source in a direction perpendicular to the arrangement direction. Then, the exposure light scans the mask, and the exposure pattern formed in the hole of the mask is imaged on the substrate.

JP2007-3829A

  However, this conventional scanning exposure apparatus has the following problems. In an exposure apparatus using a projection optical system using a combination of ordinary lenses, it is easy to adjust the magnification by adjusting the distance between the lenses. However, in the case of a microlens, an erecting equal-magnification image is formed on a substrate by arranging eight lenses in the optical axis direction in a plate having a thickness of, for example, 4 mm. Because there is, you cannot adjust the magnification. That is, in the case of using a conventional microlens array, only an erect life-size image can be exposed. Therefore, the conventional scan exposure apparatus using the microlens array has a problem that it cannot cope with a change in the pitch of the substrate to be exposed.

  The present invention has been made in view of such problems, and in an exposure apparatus using a microlens array, even if a deviation of the exposure pattern from the reference pattern occurs, this deviation is detected during exposure, An object of the present invention is to provide a microlens array that can prevent the positional deviation of the exposure pattern and can improve the accuracy of the exposure pattern in the overlay exposure, and a scan exposure apparatus using the microlens array.

The microlens array according to the present invention is a microlens array formed by laminating a plurality of unit microlens arrays in which a plurality of microlenses are two-dimensionally arranged,
A hexagonal field stop having a hexagonal aperture is disposed at a reversal imaging position between the unit microlens arrays,
An aperture field stop having a circular aperture is disposed in at least a part of the maximum enlarged portion of the exposure light between the unit microlens arrays,
The hexagonal field stop and the aperture field stop are arranged between the unit microlens arrays in a line on a line in a direction inclined in a specific direction and a direction orthogonal thereto,
A part of the hexagonal field stop at the reverse imaging position is not a hexagonal shape but a circular shape at a part of the line, and the circular field stop at the reverse imaging position is the same as the hexagonal field stop of the hexagonal field stop. It is larger than a hexagonal circumscribed circle and smaller than or equal to the circle of the aperture field stop.

A scanning exposure apparatus using a microlens array according to the present invention is arranged above a substrate to be exposed, and a plurality of unit microlens arrays each having a plurality of microlenses arranged two-dimensionally are stacked on each other. A microlens array configured above, a mask disposed above the microlens array and having a predetermined exposure pattern formed thereon, an exposure light source for irradiating the mask with exposure light, the microlens array and the substrate And a moving device that relatively moves the mask in one direction,
A hexagonal field stop having a hexagonal aperture is disposed at a reversal imaging position between the unit microlens arrays,
An aperture field stop having a circular aperture is disposed in at least a part of the maximum enlarged portion of the exposure light between the unit microlens arrays,
The hexagonal field stop and the aperture field stop are arranged between the unit microlens arrays in a line on a line in a direction inclined in a specific direction and a direction orthogonal thereto,
A part of the hexagonal field stop at the reverse imaging position is not a hexagonal shape but a circular shape at a part of the line, and the circular field stop at the reverse imaging position is the same as the hexagonal field stop of the hexagonal field stop. It is larger than a hexagonal circumscribed circle and smaller than or equal to the circle of the aperture field stop.

In a scanning exposure apparatus using this microlens array, for example,
A support substrate that tiltably supports the microlens array; and a driving member that tilts and drives the microlens arrays with respect to the support substrate, wherein the plurality of microlens arrays are parallel to a surface of the substrate. The exposure position on the substrate is adjusted by tilting from the direction.

In this case, in the scanning exposure apparatus using this microlens array,
An image detection unit for detecting an image of the substrate, an image processing unit for obtaining a reference pattern formed on the substrate by performing image processing based on a detection signal of the image, and the mask to be exposed to the reference pattern A controller that tilts the microlens array via the drive member so as to eliminate a deviation between the reference pattern and the exposure pattern by calculating a deviation between the exposure pattern and the plurality of the exposure patterns. By tilting the individual microlens arrays from a direction parallel to the surface of the substrate, the exposure position on the substrate can be adjusted to match the exposure pattern with the reference pattern.

Or in a scanning exposure apparatus using the microlens array, for example,
A moving member that moves at least a part of the unit microlens array with respect to another unit microlens array so that the optical axis of the constituent microlens is deviated;
The exposure position on the substrate by the microlens array is adjusted by biasing the optical axis of the microlens at the reversal imaging position between the unit microlens arrays.

In this case, in the scanning exposure apparatus using this microlens array,
An image detection unit for detecting an image of the substrate, an image processing unit for obtaining a reference pattern formed on the substrate by performing image processing based on a detection signal of the image, and the mask to be exposed to the reference pattern A control unit that biases the optical axis of the microlens array via the moving member so as to eliminate the deviation between the reference pattern and the exposure pattern by calculating a deviation between the exposure pattern and the exposure pattern. The exposure position on the substrate can be adjusted by deviating the optical axes of the microlenses of the plurality of microlens arrays so that the exposure pattern matches the reference pattern.

  The image detection unit is a line sensor that detects an image in a line shape, and the line sensor is arranged so that a detection region thereof is inclined so as to form an acute angle with respect to the one direction. The line sensor can be configured to detect images in a plurality of rows of microlenses.

  Further, the image detection unit is a plurality of line sensors that detect an image in a line shape, and the plurality of line sensors are arranged in a direction orthogonal to the one direction. The entire line sensor can be configured to detect images in a plurality of rows of microlenses.

  According to the present invention, in an exposure apparatus that uses a microlens array, by detecting an image of a substrate and detecting its reference pattern during exposure, the positional deviation between the reference pattern and the exposure pattern is detected during exposure. By detecting and adjusting the inclination angles of the plurality of microlens arrays, this positional deviation can be eliminated. As described above, since the exposure misalignment is detected and eliminated in real time online, the dimensional accuracy of the exposure position in the overlay exposure can be improved efficiently. In the present invention, the hexagonal field stop at the reversal imaging position has a part of the line on the line forming a circular shape instead of a hexagonal shape. Since it is larger than the hexagonal circumscribed circle of the hexagonal field stop and smaller than or the same diameter as the circle of the aperture field stop, the observation area by the microlens can be widened on the substrate. Easy to recognize standard patterns.

It is a schematic diagram which shows the exposure apparatus which concerns on embodiment of this invention. It is a longitudinal cross-sectional view which shows the part of one micro lens array of the exposure apparatus which concerns on embodiment of this invention. It is a perspective view which shows the state in which this micro lens array is arranged in multiple numbers. It is a figure which shows a micro lens. (A), (b) is a figure which shows the aperture_diaphragm | restriction. It is a top view which shows arrangement | positioning of the hexagonal field stop of a micro lens. 1 is a perspective view showing an exposure apparatus according to an embodiment of the present invention. It is a top view which shows the detection method of the exposure image by a CCD camera. It is a figure which shows the shape of the stop of the inversion imaging position of the micro lens array which concerns on embodiment of this invention. It is a figure which shows the example of the reference | standard pattern currently formed on the board | substrate. It is a figure which shows the pattern on the board | substrate seen through the aperture_diaphragm | restriction of the inversion image formation position of a micro lens array. It is a figure which shows the reference pattern on a board | substrate, and the aperture shape of the aperture_diaphragm | restriction of an inversion imaging position in piles. (A), (b) is a figure which shows the simplified exposure pattern. It is a perspective view which shows the arrangement | positioning relationship between a mask and a micro lens array. It is sectional drawing which shows arrangement | positioning of a micro lens array. It is sectional drawing which shows the operation | movement which tilts a micro lens array with the piezoelectric element which is an actuator. It is a figure which shows the relationship between the inclination of a micro lens array, and an exposure aspect. It is a figure which shows the irradiation area | region of the micro lens array in the modification of an optical axis deviation. It is sectional drawing which similarly shows the microlens array of a state without an optical axis deviation. It is sectional drawing which similarly shows the microlens array of the state which deflected the optical axis. It is a perspective view which similarly shows the microlens array of a state without an optical axis deviation. It is a perspective view which similarly shows the micro lens array of the state which deflected the optical axis. It is a figure which similarly shows a microlens array when an exposure position is deviated by optical axis deviation, and an exposure area | region is expanded. It is a figure which shows the aperture_diaphragm | restriction of the inversion imaging position of the micro lens array of the exposure apparatus which concerns on 2nd Embodiment of this invention. (A) is a figure which shows the board | substrate pattern which can be seen from the stop of the inversion imaging position of the microlens array of the exposure apparatus of 2nd Embodiment similarly, (b) is an enlarged view of the part enclosed with the dashed-two dotted line of (a). is there.

  Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings. FIG. 1 is a schematic view showing an exposure apparatus according to an embodiment of the present invention, FIG. 2 is a longitudinal sectional view showing a part of the same microlens array, and FIG. 3 is a diagram in which a plurality of microlens arrays are arranged. FIG. 4 is a diagram showing the microlens, FIGS. 5A and 5B are diagrams showing the diaphragm, and FIG. 6 is a plan view showing the arrangement of the hexagonal field diaphragm of the microlens. 7 is a perspective view showing an exposure apparatus according to an embodiment of the present invention, FIG. 8 is a plan view showing a method of detecting an exposure image by a CCD camera, FIG. 9 is a plan view showing the arrangement of a hexagonal field stop, and FIG. It is a figure which shows the reference | standard pattern on a board | substrate.

  As shown in FIG. 1, the exposure light emitted from the exposure light source 4 is guided to the mask 3 through an optical system 21 including a plane mirror, and the exposure light transmitted through the mask 3 is applied to the microlens array 2. Then, the pattern formed on the mask 3 is imaged on the substrate 1 by the microlens array 2. A dichroic mirror 22 is disposed on the optical path of the optical system 21, and observation light from the camera 23 is reflected by the dichroic mirror 22 and travels coaxially with the exposure light from the exposure light source 4 toward the mask 3. The observation light converges on the substrate 1 by the microlens array 2 and reflects the reference pattern already formed on the substrate 1, and the reflected light of the reference pattern is reflected by the microlens array 2, the mask 3 and the dichroic. The light enters the camera 23 via the mirror 22. The camera 23 detects the reflected light of the reference pattern and outputs this detection signal to the image processing unit 24. The image processing unit 24 performs image processing on the reference pattern detection signal to obtain a reference pattern detection image. The image signal of the reference pattern obtained by the image processing unit 24 is input to the control unit 25, and the control unit 25 detects the current position of the mask 3 (that is, the position of the exposure pattern to be exposed on the mask 3). A deviation from the position of the reference pattern is calculated, and an inclination angle of the microlens array 2 for eliminating the deviation amount is calculated. Then, the control unit 25 outputs a signal corresponding to the inclination angle of the microlens array 2 to the actuator 20 including the piezoelectric elements 14 and 15 that drive the inclination of the microlens array 2. 14 and 15) drive the microlens array 2 by tilting based on this signal. The substrate 1 and the mask 3 can move together in a certain direction, and the microlens array 2, the exposure light source 4, and the optical system 21 are fixedly arranged. Then, when the substrate 1 and the mask 3 are moved in one direction, the exposure light is scanned on the substrate, and in the case of a so-called single-chip substrate in which one substrate is manufactured from a glass substrate, The entire surface of the substrate is exposed.

  Next, the exposure mode by the microlens array will be described in more detail. As shown in FIG. 2, a microlens array 2 configured by two-dimensionally arranging microlenses 2 a is disposed above a substrate 1 to be exposed such as a glass substrate. A mask 3 is disposed on the mask 3 and an exposure light source 4 is disposed above the mask 3. The mask 3 is formed with a light shielding film made of a Cr film 3b on the lower surface of the transparent substrate 3a, and the exposure light passes through the holes formed in the Cr film 3b and is converged on the substrate by the microlens array 2. As described above, in the present embodiment, for example, the microlens array 2 and the exposure light source 4 are fixed, and the substrate 1 and the mask 3 are moved in the direction of the arrow 5 in synchronization, whereby exposure from the exposure light source 4 is performed. Light passes through the mask 3 and is scanned on the substrate 1 in the direction of arrow 5. The movement of the substrate 1 and the mask 3 is driven by a driving source of an appropriate moving device. The microlens array 2 and the exposure light source 4 may be moved while the substrate 1 and the mask 3 are fixed.

  As shown in FIG. 3, for example, four microlens arrays 2 are arranged in two rows on the support substrate 6 in a direction perpendicular to the scanning direction 5, and four microlens arrays 2 are arranged in the scanning direction 5. Thus, three of the four microlens arrays 2 in the rear stage are respectively arranged between the four microlens arrays 2 in the front stage, and the two rows of microlens arrays 2 are arranged in a staggered manner. ing. Thereby, the entire region of the exposure region in the direction perpendicular to the scanning direction 5 on the substrate 1 is exposed by the two rows of microlens arrays 2.

  As shown in FIG. 4, each microlens 2a of each microlens array 2 has, for example, a four-lens eight-lens configuration, and four microlens arrays 2-1, 2-2, 2-3, 2-4. Have a laminated structure. Each microlens array 2-1 or the like is composed of two lenses. As a result, the exposure light once converges between the microlens array 2-2 and the microlens array 2-3, and forms an image on the substrate below the microlens array 2-4. A hexagonal field stop 12 is disposed between the microlens array 2-2 and the microlens array 2-3, and an aperture stop 11 is disposed between the microlens array 2-3 and the microlens array 2-4. Has been. The hexagonal field stop 12 and the aperture stop 11 are provided for each microlens 2a, and the exposure area on the substrate is shaped into six corners for each microlens 2a. For example, as shown in FIG. 5A, the hexagonal field stop 12 is formed as a hexagonal opening in the lens field area 10 of the microlens 2a, and the aperture stop 11 is formed as shown in FIG. As shown, a circular opening is formed in the lens visual field region 10 of the microlens 2a.

  FIG. 6 is a diagram showing the arrangement of the microlenses 2a as the position of the hexagonal field stop 12 of the microlenses 2a in order to show the arrangement of the microlenses 2a in each microlens array 2. FIG. 6 shows a state in which the optical axis of the micro lens 2a described later is not shifted (shifted). As shown in FIG. 6, the microlenses 2 a are sequentially shifted slightly in the lateral direction in the scanning direction 5. The hexagonal field stop 12 is divided into a central rectangular portion 12 a and triangular portions 12 b and 12 c on both sides when viewed in the scanning direction 5. In FIG. 6, a broken line is a line segment that connects each corner of the hexagon of the hexagonal field stop 12 in the scanning direction 5. As shown in FIG. 6, regarding the columns in the direction perpendicular to the scan direction 5, when the rows of the hexagonal field stops 12 in the three rows in the scan direction 5 are viewed, the hexagonal field stop 12 in a specific first row. The right triangular portion 12c of the second row overlaps with the triangular portion 12b on the left side of the hexagonal field stop 12 in the second row adjacent to the rear in the scanning direction, and the left triangular portion 12b of the hexagonal field stop 12 in the first row has 3 These microlenses 2a are arranged so as to overlap the triangular portion 12c on the right side of the hexagonal field stop 12 in the row. In this manner, three rows of microlenses 2a are arranged as one set with respect to the scanning direction 5. That is, the fourth row of microlenses 2 a are arranged at the same position as the first row of microlenses 2 a in the direction perpendicular to the scan direction 5. At this time, in the three rows of hexagonal field stops 12, when the area of the triangular portion 12 b and the area of the triangular portion 12 c of the two adjacent rows of hexagonal field stops 12 are added, two triangles overlapping in the scanning direction 5 are obtained. The linear density of the total area of the portions 12b and 12c is the same as the linear density of the area of the central rectangular portion 12a. The linear density is the opening area of the hexagonal field stop 12 per unit length in the direction perpendicular to the scanning direction 5. That is, the total area of the triangular portions 12b and 12c is the area of a rectangular portion whose length is the base of the triangular portions 12b and 12c and whose width is the height of the triangular portions 12b and 12c. Since the rectangular portion has the same length as the rectangular portion 12a, the linear density of the triangular portions 12b and 12c is compared with the opening area (linear density) per unit length in the direction perpendicular to the scanning direction 5. The linear density of the rectangular portion 12a is the same. For this reason, when the substrate 1 is scanned by the three rows of microlenses 2a, it is exposed to a uniform amount of light in the entire area in the direction perpendicular to the scanning direction 5. Therefore, in each microlens array 2, microlenses 2a in an integer multiple of 3 are arranged in the scanning direction 5, so that the substrate can be exposed with a uniform amount of light over the entire area by one scan. Will receive.

  In the microlens array 2 configured in this way, the substrate 1 is moved relative to the microlens array 2 while the exposure light is irradiated from the exposure light source 4, and the substrate is scanned with the exposure light. As a result, the substrate 1 is exposed to a uniform amount of light over the entire exposure target area of the substrate 1. That is, the substrate 1 is not subjected to spot-like exposure according to the position of the microlens 2a, but the region between the microlenses 2a in one row is exposed by the microlenses 2a in the other row, and the substrate 1 is As in the case of receiving planar exposure, uniform exposure is performed over the entire area to be exposed. The pattern projected on the substrate 1 is not the shape of the hexagonal field stop 12 and the aperture stop 11 of the microlens 2a, but the mask pattern (exposure) formed in the hole of the Cr film (light-shielding film) 3b of the mask 3. Pattern).

  As shown in FIG. 14, the microlens array 2 is arranged on the support plate 6 in two rows of the microlens array 2 b and the microlens array 2 c so as to form a row in a direction perpendicular to the scanning direction 5. In addition, the microlens array 2b and the microlens array 2c are arranged so as to be shifted from each other in the scanning direction 5. As shown in FIGS. 15 and 16, the microlens array 2 is disposed in a hole 6 a provided in the support plate 6, and each hole 6 a has a size corresponding to the outer shape of each microlens array 2. have. The microlens array 2 is arranged so that adjacent microlens arrays 2 (the microlens array 2b and the microlens array 2c) are close to each other in the direction orthogonal to the scanning direction 5. The portion of the support plate 6 between the microlens arrays 2 adjacent to each other in the direction orthogonal to the scan direction 5 is extremely thin, and the end of the microlens array 2 in the direction orthogonal to the scan direction 5 is this end. The distance between the microlenses 2a and the edge is shorter than 1/2 of the arrangement pitch of the microlenses 2a. For this reason, as shown in FIG. 14, each microlens array 2 is connected between the microlenses 2 a of all the microlens arrays 2 in the direction orthogonal to the scan direction 5 even if the microlens arrays 2 are continuous in the direction orthogonal to the scan direction 5. Can be made the same interval. That is, the pitch in the direction orthogonal to the scanning direction 5 of the microlenses 2 a is constant for all the microlens arrays 2. In the scanning direction 5, one microlens array 2 is arranged, and the pitch of the microlenses 2a in the microlens array 2 is constant.

  In addition, the microlens array 2 can also be arrange | positioned with respect to the support plate 6 so that it may mutually space apart in both the scanning direction 5 and the direction orthogonal to the scanning direction 5, as shown in FIG. In this case, when viewed in the scanning direction 5, the microlens array 2 can be provided so that the ends overlap each other, and therefore, the end of each microlens array 2 in the direction orthogonal to the scanning direction 5. It is not necessary to shorten the distance between the microlens 2a and the edge of the microlens 2a so as to be less than ½ of the pitch of the microlens 2a. Further, the holes 6a of the support plate 6 do not need to have a short interval as shown in FIG. 14 in the direction orthogonal to the scanning direction 5, and can be made sufficiently wide. 14 and 3, the microlens arrays 2 are arranged in a staggered manner in the direction orthogonal to the scan direction 5, but the microlens arrays 2 are close to each other as shown in FIG. In this case, the microlens array 2 can be arranged in a straight line in the scanning direction 5.

  In the embodiment shown in FIG. 14, each microlens array 2b has, for example, two sides facing in the scanning direction 5, one supported by two piezoelectric elements 14a and 14b, and the other by one piezoelectric element 15a. The microlens array 2c is supported by, for example, two sides facing the scanning direction 5, one supported by one piezoelectric element 14c and the other supported by two piezoelectric elements 15b and 15c. .

  As shown in FIGS. 15 and 16, holes 6a having a shape corresponding to the shape of the microlens array 2 are formed at the arrangement position of the microlens array 2 on the support plate 6 as described above. 2 is fitted in the hole 6a. In addition, the upper surface of the support plate 6 is notched around the hole 6a to form a step 6b. A piezoelectric element 14 (14a, 14a, 14b, 14c), 15 (15a, 15b, 15c) are arranged. The microlens array 2 is formed with a flange portion 9 extending in the horizontal direction at an upper portion thereof, and the flange portion 9 is positioned at a step 6b around the hole 6a of the support plate 6.

  The piezoelectric elements 14 and 15 have their base portions 141 and 151 fixed to the lower portion of the step 6 b of the support plate 6, and their tips 142 and 152 fixed to the lower surface of the flange portion 9 of the microlens array 2. Yes. The piezoelectric elements 14 and 15 are connected to an appropriate control device (not shown) via the lead wire 7, and the piezoelectric elements 14 and 15 are supplied with a drive voltage from the control device via the lead wire 7. As shown in FIG. That is, in FIG. 15, since the piezoelectric elements 14 and 15 are not deformed, the optical axis of the microlens array 2 is oriented in the vertical direction (perpendicular to the surface of the support plate 6). The left piezoelectric element 14 is deformed so that the tip 142 thereof faces upward, whereby the microlens array 2 is oriented in the direction in which the optical axis is inclined with respect to the vertical direction. In this way, the direction of the optical axis of the microlens array 2 can be adjusted by adjusting the voltage applied to the piezoelectric element, so if there is a misalignment between the reference pattern on the substrate and the exposure pattern. The positional deviation can be eliminated by detecting the positional deviation during exposure and adjusting the inclination angle of one or a plurality of microlens arrays. Needless to say, the support points by the piezoelectric elements 14 and 15 are not limited to the above-described three points, and four or more points may be provided. In this case, it is necessary to regulate the deformation amounts of four or more piezoelectric elements.

  In the support mechanism of the microlens array 2 configured as described above, the deformation amount of the piezoelectric elements 14 and 15 can be controlled by controlling the voltage applied to the piezoelectric elements 14 and 15, and the support is made at three points. By adjusting the combination of deformation amounts of the piezoelectric elements 14 and 15 of the microlens array 2, the microlens array 2 can be tilted in an arbitrary direction.

  The camera 23 is a line CCD camera and detects an image in a one-dimensional line shape. FIG. 8 is a diagram showing the arrangement of the microlenses 2 a of the microlens array 2 and the detection area 17 of the line CCD camera 23. As described above, the hexagonal field stop 12 of the microlens 2a is adjacent to the nearest neighbor in the scanning direction 5 and is not parallel to the scanning direction 5, but is inclined. In the line CCD camera, the linear detection region 17 is a straight line connecting the hexagonal field region 12 of the microlens 2a nearest to the scanning direction 5 from the hexagonal field region 12 of the corner microlens 2a. The detection area 17 is inclined with respect to the scanning direction 5 so as to coincide with each other.

  When the image on the substrate 1 is detected by the line CCD camera 23 while the substrate 1 is moved in the scanning direction 5, the image is detected on the line of the detection region 17 by one line scan. This detection signal is input to the image processing unit 24 and subjected to image processing. The detection region 17 of the line CCD camera 23 is, for example, from the microlens 2 a at the corner of the microlens array 2 to the other end in the width direction of the microlens array 2. That is, with respect to the direction perpendicular to the scanning direction 5, the hexagonal field region of the microlens 2 a located on the inclined line for the entire region in the width direction of the microlens array 2 from the corner portion of one end portion to the other end portion. Twelve images are detected. At this time, if the scanning performance of the line CCD camera is 10 msec, the movement speed of the substrate and the mask is, for example, 100 mm / sec. And the mask moves 1 mm. Therefore, after detecting the image of the microlens 2 a at the corner of the microlens array 2 at one end of the line CCD camera 23, the width direction of the microlens array 2 at the other end of the line CCD camera 23. When the image of the microlens 2a at the other end is detected, the image of the microlens 2a at the other end is an image 1 mm behind the position of the image of the microlens 2a at the corner. . Since the size in the width direction of the substrate and the mask is, for example, 1 m, a displacement of 1 mm occurs per 1 m of the substrate. Therefore, between the adjacent microlenses 2a, the detected image is shifted in the scanning direction 5 by the amount obtained by dividing 1 mm by the number of microlenses 2a.

  Further, the scan image by the line CCD camera 23 detects the image of the micro lens 2a at the corner portion, and then detects the image of the micro lens 2a obliquely forward in the substrate scanning direction 5. In this way, in the one-dimensional scan image of the line CCD camera 23, the images of the microlenses 2a arranged obliquely forward in the substrate scanning direction 5 are sequentially read. Accordingly, if the arrangement pitch of the microlenses 2a in the substrate scanning direction 5 is Δd, the image signal read by the line CCD camera 23 in one scan is shifted by Δd forward in the substrate scanning direction 5 by Δd. The images of the lens 2a are read sequentially. Therefore, if this lens pitch Δd is 150 μm, and the substrate moving speed is 100 mm / sec as described above, the substrate moves through this lens pitch Δd (= 150 μm = 0.15 mm). Takes 1.5 msec. Accordingly, when an image of the micro lens 2a at the corner portion is detected by one scan of the line CCD camera 23 and then the image of the micro lens 2a in the next order is detected, this image is displayed as the micro lens 2a at the corner portion. It is an image at a position advanced by Δd in the scan direction 5 of the substrate from the image at the position adjacent to the scan direction 5 of the image of FIG. Therefore, at a certain point in time, an image at a position adjacent to the direction perpendicular to the scanning direction 5 of the image of the microlens 2a at the corner is obtained at that point in time from the next microlens 2a of the microlens 2a at the corner. This is an image detected by the second microlens 2a after 1.5 msec from the time.

  The image processing unit 24 obtains an image at a specific point in time while the substrate is moving when performing the above-described correction processing related to the time delay and the position adjustment from the acquisition signal of the line CCD camera 23. be able to. For example, when the first layer exposure pattern L1 (reference pattern) is formed on the substrate 1 carried into the exposure apparatus of this embodiment as shown in FIG. When the stopped substrate 1 is scanned, an image on the substrate 1 is detected by the line CCD camera 23, and the detection signal of the reference pattern L1 is image-processed by the image processing unit 24, the reference pattern L1 shown in FIG. The detected image is obtained. Based on the image detection signal of the image-processed pattern L1, the control unit 25 determines the reference position of the first layer pattern L1 and the reference position of the exposure pattern L2 formed on the mask 3 and to be exposed as the second layer pattern L2. And the inclination angle of the microlens array 2 for eliminating the amount of deviation is calculated. Then, the control unit 25 outputs a signal corresponding to the inclination angle of the microlens array 2 to the actuator 20 including the piezoelectric elements 14 and 15 that drive the inclination of the microlens array 2. 14 and 15) drive the microlens array by tilting based on this signal. That is, the actuator 20 (piezoelectric elements 14 and 15) adjusts the voltage applied to the piezoelectric elements 14 and 15 based on the inclination angle of the microlens array 2 so that the microlens array 2 has a predetermined inclination angle. To drive.

  FIG. 17 is a diagram showing the relationship between the exposure light and the substrate 1 when the inclination angle of the microlens array 2 is gradually increased with respect to the adjacent microlens array 2. As shown in FIG. 17, as the inclination angle of the microlens array 2 increases, the incident angle of the exposure light with respect to the substrate 1 gradually decreases from 90 ° (becomes an acute angle). As a result, the distances b1, b2, b3 of the exposure regions between the adjacent microlens arrays 2 are gradually increased, and the inclination angle is the largest with respect to the pattern of the end portion (reference point) of the horizontally arranged microlens array 2. The pattern at the position farthest from the reference point of the large microlens array 2 is farther from the reference point than the exposure position when all the microlens arrays 2 are horizontal. In this way, the exposure position on the substrate can be adjusted and the exposure area on the substrate can be enlarged simply by gradually increasing the inclination angle of the microlens array 2 arranged in a row. Conversely, when the exposure area is reduced, the microlens array 2 may be inclined in the reverse direction.

  By the way, when the mark on the substrate is viewed in the detection area 17 (detection width is about 2 μm) by the line CCD camera shown in FIG. 8 with respect to the microlens arranged as shown in FIG. Since it is a hexagonal region of the hexagonal field stop 12 shown in FIG. 6, even if scanning is performed in the scanning direction 5, some of the marks on the substrate cannot be seen by the line camera. That is, in FIG. 8, the region where the detection region 17 overlaps the opening region of the hexagonal field stop 12 between two microlenses adjacent to each other in the scanning direction 5 (the interval in the scanning direction is Δd) In FIG. 8, a region having a width indicated by Δe, that is, a region having Δe in a direction perpendicular to the scanning direction 5 is detected in the detection region 17 in the scanning direction 5. And the opening area of the hexagonal field stop 12 do not overlap. Therefore, a part of the mark on the lower substrate is not detected in this Δe region between all adjacent microlenses.

  Therefore, in the present invention, as shown in FIG. 9, a plurality of hexagonal field stops arranged on a straight line corresponding to the detection region 17 of the line CCD camera extending in a direction inclined with respect to the scanning direction 5. Is formed in a circular stop 18a in the same manner as the aperture field stop 11 instead of a hexagon. When the detection area 17a of the line CCD camera extends in a direction perpendicular to the scanning direction 5 (the detection area 17a is indicated by a two-dot chain line), on the straight line in the direction perpendicular to the scanning direction 5 correspondingly. A part of the plurality of hexagonal field stops arranged in FIG. 3 is formed into a circular stop 18b (indicated by a two-dot chain line) in the same manner as the aperture field stop 11 instead of the hexagonal shape. In the case of the circular diaphragm 18b corresponding to the detection region 17a, all the marks on the lower substrate can be detected by making the three adjacent rows into the circular diaphragm 18b. Since one line CCD camera is usually provided, either the detection area 17 or the detection area 17a is provided. In the case where the detection region 17 is provided, the circular diaphragm 18b is not necessary, and the hexagonal field stop 12 remains a hexagon.

  The hexagonal field stop 12 is a stop provided at a reversal imaging position between each unit microlens array. In the present invention, a part of the stop is changed from a hexagon to a circular stop 18a, 18b. It is. The diameters of the circular diaphragms 18a and 18b are equal to or smaller than the diameter of the aperture diaphragm 11. The diameters of the circular stops 18a and 18b are larger than the diameter of the hexagonal circumscribed circle of the hexagonal field stop 12. Thus, the diameters of the circular stops 18a and 18b at the reversal imaging position are larger than the diameter of the circumscribed circle of the hexagonal field stop 12, so that the line CCD camera 23 can be seen on the lower substrate visible through the microlens stop. The visible range of the mark is larger than that of the hexagonal field stop 12. That is, when the aperture is hexagonal, the mark on the lower substrate cannot be visually recognized in the range of Δe shown in FIG. 8 (the camera cannot detect it). On the other hand, in the present invention, the shape of the circular diaphragms 18a and 18b is larger than the diameter of the hexagonal circumscribed circle, so that the visible range of the mark on the lower substrate is wider than in the hexagonal case. , Δe is smaller than in the case of the hexagonal field stop 12, and if the diameters of the stops 18a, 18b are further increased, the diameters of the stops 18a, 18b exist such that Δe becomes zero.

  On the other hand, the diameters of the circular diaphragms 18a and 18b are equal to or smaller than the diameter of the aperture diaphragm 11. The aperture stop 11 is a stop that is provided at a position where the incident exposure light is maximized in each convex lens of the microlens and blocks exposure light transmitted through a portion other than the convex lens. Therefore, the exposure light formed by the aperture stop 11 is optically processed by the convex lens of the microlens. Therefore, even when the circular apertures 18 a and 18 b are used to enlarge the hole area of the hexagonal field stop 12, the maximum diameter is equal to or smaller than the diameter of the aperture stop 11. Note that the fact that the circular stops 18a and 18b have the same diameter as the aperture stop 11 means that the stop at the reverse imaging position is removed. That is, for convenience of explanation, the circular stops 18a and 18b having the same diameter as the diameter of the aperture stop 11 are provided. However, in actuality, the exposure light is only emitted from the aperture stop 11 only by removing the stop at the reverse imaging position. The exposure area is regulated.

  Next, the operation of the exposure apparatus of the present embodiment configured as described above will be described. First, as shown in FIG. 1, the substrate 1 is carried into a predetermined exposure position of the exposure apparatus. A pattern L1 as shown in FIG. 13A is exposed on the substrate 1 as a reference pattern. In the case of TFT, this reference pattern is actually as shown in FIG. 10, but is simplified in FIG. 13 (a). The reference pattern L1 is a first layer pattern, and the second layer pattern to the fourth layer pattern are exposed in the exposure apparatus on the basis of the first layer pattern, for example, a five layer pattern is overlaid and exposed. The

  At this time, when a dimensional change occurs in a glass substrate such as a thin film transistor liquid crystal substrate and a color filter substrate during the manufacturing process, the exposure pattern in the overexposure shifts from the lower layer pattern. Therefore, the substrate 1 that has been loaded is scanned with the mask 3 together with the microlens array 2, and an image on the substrate 1 is detected by the line CCD camera 23. The line CCD camera 23 is a one-dimensional sensor, and is installed so as to detect a region inclined with respect to the substrate scanning direction 5 as shown in FIG. As described above, the detection region 17 of the line CCD camera 23 is not set in a direction perpendicular to the substrate scanning direction 5 but is inclined in this direction. This is because the discontinuous portion exists between the hexagonal field stops 12 of the adjacent microlenses 2a when the detection region 17 having the shape is arranged, so that the image on the substrate 1 cannot be detected continuously. Therefore, in the present embodiment, the detection region 17 is arranged to be inclined so as to pass through the hexagonal field stop 12 of the microlens array 2 that is closest to the scanning direction 5 in the vicinity. As a result, the correction based on the delay time due to the inclination of the detection region 17 and the correction based on the time delay of one scan time of the CCD sensor are performed by image processing. The image on the substrate 1 can be detected using the detected image of the microlens 2a at the corner as a reference. That is, the image processing unit 24 obtains the first layer pattern L1 on the substrate 1 shown in FIG. 13A based on the detection signal of the camera 23.

  When the first layer pattern L1 coincides with the second layer pattern L2 formed on the mask 3 and to be exposed, the control unit 25 exposes the second layer pattern L2 on the substrate. That is, the substrate 1 and the mask 3 are moved together with respect to the microlens array 2 and the light source, and the exposure pattern L2 formed on the mask 3 is superimposed and exposed on the first layer pattern L1. Accordingly, as shown in FIG. 13B, the second layer pattern L2 can be formed at a position separated from the corner portion serving as the reference of the first layer pattern L1 by the design values Δx and Δy.

  At this time, as shown in FIGS. 2 to 4, when exposure light from the exposure light source 4 enters the microlens array 2 through the mask 3, an inverted equal magnification image is formed on the hexagonal field stop 12. Then, the exposure light transmitted through each microlens 2a is shaped into a hexagon shown in FIG. 5A by the hexagonal field stop 12 and projected onto the substrate 1 as an erecting equal-magnification image. At this time, the exposure area by the microlens 2a is arranged on the substrate as shown in FIG.

  Then, as shown in FIG. 3, the eight microlens arrays 2 expose the entire exposure region in the direction perpendicular to the scanning direction 5 of the substrate 1 with a uniform amount of light. Then, when the substrate 1 and the mask 3 are scanned with respect to the microlens array 2 in the scanning direction 5, the exposure area on the entire surface of the substrate 1 is exposed with a uniform amount of light. Thereby, the mask pattern formed on the mask 3 forms an image on the substrate 1.

  On the other hand, when the position of the exposure pattern L2 of the mask 3 at the current position is shifted from the first layer pattern L1 detected by the line CCD camera 23, the inclination angle of the microlens array 2 calculated by the control unit 25 is obtained. Based on this, the actuator 20 supplies voltage to the piezoelectric elements 14 and 15 to tilt the microlens array 2 so that the reference position of the exposure pattern L2 of the mask 3 matches the reference position of the first layer pattern L1. The incident angle of the exposure light with respect to the substrate 1 is adjusted. For example, as shown in FIG. 17, when four microlens arrays 2 arranged in a direction perpendicular to the substrate scanning direction are inclined so that the inclination angle gradually increases, one microlens array is formed on the substrate 1. Although the inclination angle of the exposure light with respect to the substrate by each microlens 2a of the lens array 2 does not change, the exposure angle changes between the adjacent microlens arrays 2, and with respect to the horizontal microlens array 2 at the right end of FIG. Thus, the inclination of the exposure light from the microlens array 2 with respect to the substrate increases toward the left side.

  As a result, the mask pattern (indicated by □ in FIG. 17) of the mask 3 projected from each microlens array 2 onto the substrate 1 is projected onto the area a for each microlens array 2. In this case, the inclination angle of the exposure light is different for each microlens array 2, but the exposure area a is substantially the same size for each microlens array 2 because the inclination angle itself is extremely small. However, between the adjacent microlens arrays 2, the mask pattern intervals b1, b2, b3 are gradually increased.

  In this way, the exposure area of the leftmost microlens array 2 in FIG. 17 with respect to the substrate is shifted to the left as compared with the case where all the microlens arrays 2 are horizontal. Thereby, the shift | offset | difference of the 1st layer pattern L1 and the 2nd layer pattern L2 can be eliminated. When Δx and Δy are 70 μm, if the microlens array 2 on the left side is slightly inclined (about 1/1000 of several degrees) with respect to the rightmost microlens array 2, the exposure position is shifted by about 1 μm. Can do. Therefore, the pattern with a spacing of 70 μm can be shifted by 1 μm simply by tilting the microlens array 2 at a very small angle. Note that the tilting method of the microlens array 2 for eliminating the pattern displacement is not limited to that shown in FIG.

  As described above, the reference pattern on the substrate actually has a complicated shape as shown in FIG. Then, when the reference pattern on the substrate and the diaphragm (hexagonal field diaphragm 12 and circular diaphragm 18a) provided at the reverse imaging position shown in FIG. 9 are overlapped, a pattern as shown in FIG. 12 is obtained. Accordingly, when the reference pattern on the lower substrate is viewed from the aperture opening of the microlens array, the reference pattern on the substrate can be seen in the aperture opening as shown in FIG. The line CCD camera 23 observes this pattern.

  As shown in FIG. 11, the reference pattern on the substrate where the line CCD camera 23 can be seen includes a portion that cannot be detected by the line CCD camera 23 when the stop is a hexagonal field stop 12 having a hexagonal aperture. As in the invention, by setting the circular stop 12a larger than the opening of the hexagonal field stop 12 for one row on the detection area 17, the area that cannot be detected by the line CCD camera 23 becomes smaller or the area that cannot be detected. Disappear. For this reason, there are few portions where the reference pattern on the substrate is hidden behind the stop, and the position of the reference pattern and the position of the exposure pattern on the mask 3 can be reliably aligned. As a result, the position of the mask 3 can be adjusted. It can be adjusted with high accuracy according to the reference pattern.

  Note that, by changing a part of the stop at the reversal imaging position from the hexagonal field stop 12 to the circular stop 18a, uneven exposure may occur in the microlens 2a. However, in the aperture pattern shown in FIG. 9, the number of microlenses 2a involved in exposure is normally 100 or more for one row in the direction perpendicular to the scanning direction 5. Therefore, among the microlenses 2a in each row, the aperture at the reversal imaging position of one microlens 2a is larger than the hexagonal field stop 12 (maximum circular aperture field stop 11) as a circular stop 18a. Unevenness does not occur.

  As described above, in the present embodiment, even if the dimensional variation of the substrate occurs in the overlay exposure, this can be detected in real time, and the exposure position can be aligned with the exposure pattern in the lower layer. That is, in the present embodiment, the positional deviation between the lower layer pattern and the exposure pattern can be corrected by tilting the microlens array during the exposure in the exposure apparatus, and the positional deviation is corrected in real time to achieve high accuracy. Multiple exposures can be performed.

  As the exposure light, various kinds of light such as pulsed laser light or continuous light such as a mercury lamp can be used. Furthermore, the line CCD camera 23 uses a light irradiation unit that irradiates the substrate and a line CCD sensor that detects reflected light, and the substrate is irradiated with observation light from the camera 23 by the dichroic mirror 22. Light may be irradiated from below the substrate, and an image of the first layer exposure pattern formed on the substrate may be input to the line CCD sensor and detected. Furthermore, the image on the substrate is not limited to being detected by the line CCD sensor, and the image on the substrate can also be detected by a two-dimensional sensor.

  Further, for example, in the above-described embodiment, as shown in FIG. 8, by performing image processing by arranging the line sensor of the line CCD camera 23 so that the detection region 17 is inclined with respect to the scanning direction 5, The continuous image in the hexagonal field stop 12 is detected without interruption in the entire region in the direction perpendicular to the scan direction 5, but the line sensor is perpendicular to the scan direction 5 as indicated by a two-dot chain line in FIG. 8. In the same manner, by providing three lines of the line sensors, it is also possible to detect images in the hexagonal field stop 12 that are continuous without interruption in the entire region in the direction perpendicular to the scanning direction 5.

  Furthermore, in the above-described embodiment, as shown in FIG. 17, by adjusting the magnification or the exposure position of a microlens array that can originally only expose an erecting equal-magnification image by tilting the microlens array. However, the present invention is not limited to this, and as shown in FIGS. 18 to 23, the magnification of the microlens array and the exposure position are also adjusted by deviating the optical axis of the microlens. be able to.

  FIG. 18 shows a state in which the plurality of microlens arrays 2 are arranged. The microlens array 2 projects an image of the mask pattern of the mask 3 on the substrate. However, in FIG. 18, the microlens array 2 is shown in a longitudinal sectional view, and the projection image is shown in a planar view. For example, 41 microlens arrays 2 (shown as 11 for convenience of illustration) are juxtaposed on the support plate 6. For example, the width of the microlens array 2 is 30 mm, the width of the support plate 6 and the mask 3. The width of the transparent substrate 3a is, for example, 1220 mm.

  FIG. 19 is a schematic diagram showing a stacked state of the unit microlens arrays 2-1, 2-2, 2-3 and 2-4. The configuration of each of the microlenses 2a such as the four unit microlens arrays 2-1 is composed of two convex lenses for each unit microlens array 2-1, as shown in FIG. In a normal state, as shown in FIG. 19, the optical axes of the microlenses 2a of the unit microlens arrays 2-1, 2-2, 2-3, 2-4 are all coincident. Accordingly, the exposure light is incident perpendicular to the substrate as shown in FIG.

  Thus, in this modification, as shown in FIG. 20, the optical axes of the microlenses 2a of the unit microlens array 2-1 in the first layer and the unit microlens array 2-2 in the second layer are The optical axes of the microlenses 2a of the unit microlens array 2-3 in the third layer and the unit microlens array 2-4 in the fourth layer can be shifted (shifted) by the size of d. It has become. This deviation d is, for example, 0.3 μm. As described above, as the optical axes of the microlenses of the unit microlens arrays 2-3 and 2-4 are deviated, as shown in FIG. 22, the exposure light is unit microlens array 2-2 and unit microlens array 2. -3, the exposure light is incident on the substrate at a position slightly deviated from that in FIG. The optical axis of the exposure light emitted from the lowermost fourth unit microlens array 2-4 is about twice the amount d of the optical axis of the microlens of the third unit microlens array 2-3. The amount of deviation of the exposure light on the substrate is about 2d. That is, when the optical axis of the microlens is deviated by the deviation amount d, the projection pattern is deviated by about 2d on the substrate. When d = 0.3 μm described above, the projection pattern on the substrate is only 0.6 μm. Be biased.

  In this way, the exposure position on the substrate by the microlens array can be adjusted by shifting the optical axis of the microlens 2a such as the unit microlens array 2-1.

  The deviation of the optical axis of the microlens may be achieved by moving some unit microlens arrays in a direction perpendicular to the optical axis with respect to other unit microlens arrays. The unit microlens array may be moved by, for example, applying a voltage to the piezoelectric element so as to push the unit microlens array in a direction perpendicular to the optical axis by an amount of distortion of the piezoelectric element due to the voltage change. . In this case, the piezoelectric element becomes the moving member, but the moving member is not limited to the piezoelectric element, and various devices or members can be used.

As described above, the exposure position of the microlens array 2 is 0.6 μm, for example, by the deviation (shift) of the optical axis of the microlens 2a due to the movement of the unit microlens array 2-1 etc. Can be shifted. Therefore, as shown in FIG. 23, for example, when the exposure position by 41 microlens arrays 2 is shifted by 0.6 μm with respect to one microlens array 2, the projection position is shifted by 24.4 μm as a whole. be able to. That is, when the exposure position of the rightmost microlens array 2 in FIG. 23 is the same as that in FIG. 18, the exposure position of the leftmost microlens array 2 in FIG. It moves to the left by 4 μm, and as a whole, the projection area of the projection pattern is enlarged by 24.4 μm. Since the mask width is 1220 mm, this enlargement amount is 24.4 × 10 ⁻³ (mm) / 1220 (mm) = 20 × 10 ⁻⁶ , which means that the magnification correction of 20 ppm can be performed.

  Note that when the magnification is reduced, the exposure position can be similarly adjusted. In the above embodiment, between the first and second layer unit microlens arrays 2-1 and 2-2 and the third and fourth layer unit microlens arrays 2-3 and 2-4, The exposure position was adjusted by deviating the optical axis of the microlens 2a. This is to shift the optical axis of the microlens of the unit microlens array at the inverted imaging position of the microlens array. For this reason, the number of unit microlens arrays in the microlens array 2 is not limited to four as in the above embodiment, but in this case as well, the deviation of the optical axis of the microlens of the unit microlens array is not limited. Needs to be performed at the reverse imaging position of the microlens array.

  Also in this modification, even if the substrate dimension fluctuates in the overlay exposure, this can be detected in real time, and the exposure position can be adjusted to the exposure pattern in the lower layer with high accuracy. That is, in this modification, the positional deviation between the lower layer pattern and the exposure pattern is corrected during exposure by adjusting the position of the optical axis of the microlens by moving the unit microlens array in the microlens array. It is possible to correct misalignment in real time and perform highly accurate overlay exposure.

  Moreover, in this modification, the exposure position on the substrate is adjusted by shifting the optical axis of the microlens 2a, and consequently the magnification of the exposure pattern is adjusted. Does not vary for microlens arrays. That is, the surface to be exposed on the substrate can be positioned within the range of the focal depth of all the microlenses. Normally, the focal depth of the microlens array is 50 μm, but there is an advantage that the exposure surface on the substrate can be positioned within this focal depth.

  Next, a second embodiment of the present invention will be described. In this embodiment, as shown in FIG. 24, a reference mark 50 is formed on circular stops 18a and 18b provided in place of the hexagonal field stop at the reverse imaging position. In the first embodiment described above, the image processing unit 24 performs image processing on the reference pattern on the substrate in which the line CCD camera 23 can be seen in the circular stops 18a and 18b having a wide visual field area and the exposure pattern formed on the mask 3. Then, the control unit 25 drives the actuator 20 so that the line segment serving as the reference of the reference pattern matches the line segment serving as the reference of the exposure pattern. In this case, the reference on the substrate is used. Since the pattern and the exposure pattern on the mask overlap each other due to the design of the TFT (thin film transistor), there is a possibility that it may be difficult to confirm the deviation between the reference pattern on the substrate and the exposure pattern on the mask. There is. In the present embodiment, in order to avoid this, a reference mark 50 is provided on the circular diaphragms 18a and 18b provided at the reversal imaging positions, and the reference mark 50 and a line segment serving as a reference of the reference pattern on the substrate are provided. Even if there are many portions where the exposure pattern on the mask and the reference pattern on the substrate overlap by checking the coincidence and mismatch of the exposure pattern on the mask with the line segment serving as a reference by the line CCD camera 23, the mask It becomes easy to detect the positional deviation with respect to the substrate. Thereby, the magnification correction of the microlens can be performed so that the position of the microlens is in the same positional relationship as the reference line of the substrate.

1: Substrate 2: Microlens array 2a: Microlenses 2-1 to 2-4: (Configuration) Microlens array 3: Mask 3a: Transparent substrate 3b: Cr film 4: Exposure light source 5: Scanning direction 6: Support substrate 10 : Lens field region 11: Aperture stop 12: Hexagonal field stop 12a: Rectangular portion 12b, 12c: Triangle portion 14 (14a, 14b, 14c), 15 (15a, 15b, 15c): Piezoelectric elements 17, 17a: Detection region 18a, 18b: Circular aperture 20: Actuator 21: Optical system 22: Dichroic mirror 23: Line CCD camera 24: Image processing unit 25: Control unit 50: Reference mark

Claims (8)

In the microlens array formed by laminating a plurality of unit microlens arrays in which a plurality of microlenses are two-dimensionally arranged,
A hexagonal field stop having a hexagonal aperture is disposed at a reversal imaging position between the unit microlens arrays,
An aperture field stop having a circular aperture is disposed in at least a part of the maximum enlarged portion of the exposure light between the unit microlens arrays,
The hexagonal field stop and the aperture field stop are arranged between the unit microlens arrays in a line on a line in a direction inclined in a specific direction and a direction orthogonal thereto,
A part of the hexagonal field stop at the reverse imaging position is not a hexagonal shape but a circular shape at a part of the line, and the circular field stop at the reverse imaging position is the same as the hexagonal field stop of the hexagonal field stop. A microlens array having a diameter larger than a circumscribed circle of a hexagon and smaller than or equal to a circle of the aperture field stop. A microlens array formed by stacking a plurality of unit microlens arrays arranged above a substrate to be exposed and each having a plurality of microlenses arranged two-dimensionally; and above the microlens array , A mask on which a predetermined exposure pattern is formed, an exposure light source that irradiates the mask with exposure light, and a moving device that relatively moves the microlens array, the substrate, and the mask in one direction. And having
A hexagonal field stop having a hexagonal aperture is disposed at a reversal imaging position between the unit microlens arrays,
An aperture field stop having a circular aperture is disposed in at least a part of the maximum enlarged portion of the exposure light between the unit microlens arrays,
The hexagonal field stop and the aperture field stop are arranged between the unit microlens arrays in a line on a line in a direction inclined in a specific direction and a direction orthogonal thereto,
A part of the hexagonal field stop at the reverse imaging position is not a hexagonal shape but a circular shape at a part of the line, and the circular field stop at the reverse imaging position is the same as the hexagonal field stop of the hexagonal field stop. A scanning exposure apparatus using a microlens array, wherein the scanning exposure apparatus has a diameter larger than a hexagonal circumscribed circle and smaller than or equal to a circle of the aperture field stop. A support substrate that tiltably supports the microlens array; and a driving member that tilts and drives the microlens arrays with respect to the support substrate, wherein the plurality of microlens arrays are parallel to a surface of the substrate. 3. The scanning exposure apparatus using a microlens array according to claim 2, wherein the exposure position on the substrate is adjusted by tilting from the direction. An image detection unit for detecting an image of the substrate, an image processing unit for obtaining a reference pattern formed on the substrate by performing image processing based on a detection signal of the image, and the mask to be exposed to the reference pattern A controller that tilts the microlens array via the drive member so as to eliminate a deviation between the reference pattern and the exposure pattern by calculating a deviation between the exposure pattern and the plurality of the exposure patterns. 4. The micro lens array according to claim 3, wherein the microlens array is tilted from a direction parallel to the surface of the substrate to adjust the exposure position on the substrate so that the exposure pattern matches the reference pattern. A scanning exposure system that uses a lens array. A moving member that moves at least a part of the unit microlens array with respect to another unit microlens array so that the optical axis of the constituent microlens is deviated;
3. The micro exposure apparatus according to claim 2, wherein an exposure position on the substrate by the microlens array is adjusted by deviating an optical axis of the microlens at a reversal imaging position between the unit microlens arrays. A scanning exposure system that uses a lens array. An image detection unit for detecting an image of the substrate, an image processing unit for obtaining a reference pattern formed on the substrate by performing image processing based on a detection signal of the image, and the mask to be exposed to the reference pattern A control unit that biases the optical axis of the microlens array via the moving member so as to eliminate the deviation between the reference pattern and the exposure pattern by calculating a deviation between the exposure pattern and the exposure pattern. 6. The exposure position on the substrate is adjusted by biasing the optical axis of the microlenses of the plurality of microlens arrays so that the exposure pattern matches the reference pattern. Scan exposure equipment using microlens array. The image detection unit is a line sensor that detects an image in a line shape, and the line sensor is disposed so as to be inclined so that the detection region forms an acute angle with respect to the one direction. The scan exposure apparatus using the microlens array according to claim 4 or 6, wherein images in a plurality of rows of microlenses are detected. The image detection unit is a plurality of line sensors that detect an image in a line, and the plurality of line sensors are arranged in a direction orthogonal to the one direction, The scan exposure apparatus using a microlens array according to claim 4 or 6, wherein an image in a plurality of rows of microlenses is detected by the entire line sensor.

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