JP2012114404A - Method and apparatus of manufacturing thin film solar cell - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a novel method of manufacturing a thin film solar cell in which the number of laser material processing machines to be arranged in a manufacturing line can be decreased, and enhancement of power generation efficiency can be expected.SOLUTION: After depositing a first electrode film 1, a power generation layer 2 and a second electrode film 3 on a substrate 0 so as to be superimposed, separation grooves 11, 21 which divide the laminated films 1, 2, 3 into cell units are formed. Subsequently, an insulator 6 is applied to the inside of the separation grooves 11, 21, and then the second electrode film 3 and the first electrode film 1 are insulated at one edges of the separation grooves 11, 21. Thereafter, a conductor 7 is applied to the inside of the separation grooves 11, 21, and then the second electrode film 3 at one edges of the separation grooves 11, 21 and the first electrode film 1 at the other edges of the separation grooves 11, 21 are short-circuited.

Description

  The present invention relates to a method for manufacturing a thin film solar cell and a manufacturing apparatus for carrying out the method.

  In the manufacturing process of the thin film solar cell, a laminated film, that is, a first electrode film, a power generation layer (a photoelectric conversion layer, a light absorption layer), and a second electrode film are formed on a substrate. In the case of a silicon-based solar cell, a transparent conductive film, a silicon film, and a back electrode film are often stacked in this order on a transparent substrate. In the case of a CIGS (or CIS, chalcopyrite) solar cell, it is usual to stack a back electrode film, a CIGS film, and a transparent conductive film on the substrate in this order.

  In the conventional manufacturing procedure, first, a first electrode film is formed on a substrate, this electrode film is irradiated with a laser beam to remove it, and a separation groove for dividing the film into cell units is formed (P1 processing). ). Next, a power generation layer is formed on the first electrode film, and this power generation layer is irradiated with a laser beam to remove it and form a separation groove (P2 processing). The constituent material of the power generation layer enters the separation groove previously formed in the first electrode film. Further, a second electrode film is formed on the power generation layer, and the power generation layer is irradiated with laser light to remove the second electrode film together with the power generation layer, thereby forming a separation groove (P3 processing). The constituent material of the second electrode film enters the separation groove previously formed in the power generation layer. Through the above, a structure in which a plurality of cells functioning as photovoltaic elements are connected in series is completed (see, for example, the following patent document).

  According to the above procedure, the laser processing step is visited at least three times (P1, P2 and P3), and the power generation layer forming step and the second electrode film forming step are interposed between these laser processing steps. Become. Therefore, the solar cell production line includes at least three laser processing machines such as a laser processing machine that performs P1 processing, a vapor deposition apparatus, a laser processing machine that performs P2 processing, a vapor deposition apparatus, and a laser processing machine that performs P3 processing. It was necessary to arrange.

  Moreover, in the manufactured thin film solar cell product, the boundary region between the cells is a non-power generation region that does not function as a photovoltaic element. Specifically, the range from the separation groove formed by P1 processing to the separation groove formed by P3 processing across the separation groove formed by P2 processing corresponds. In order to increase the power generation efficiency of thin film solar cell products, it is essential to narrow this non-power generation region. However, in order to narrow the non-power generation region, it is necessary to narrow the width of the three separation grooves formed in the P1, P2, and P3 processing, and to reduce the distance between the separation grooves. This has the drawback that the laser processing accuracy must be drastically improved, and it is not easy to realize.

Japanese Patent No. 4563491

  The present invention aims to provide a new thin-film solar cell manufacturing process that can reduce the number of laser processing machines to be arranged in a production line and / or improve power generation efficiency.

  The method for manufacturing a thin film solar cell according to the present invention includes a laser processing step for forming a separation groove that divides a first electrode film, a power generation layer, and a second electrode film on a substrate into cell units, and a laser processing step. An insulating treatment step of applying an insulator covering the first electrode film and the power generation layer at one side edge of the formed separation groove, and one of the separation grooves overlaid on the insulator applied in the insulation treatment step A short-circuit treatment step of applying a conductor that electrically short-circuits the second electrode film located on the side edge portion on the side and the first electrode film located on the side edge portion on the other side of the separation groove. .

  According to this manufacturing method, the film forming process of the first electrode film, the power generation layer, and the second electrode film can be arranged before the laser processing process. That is, it is not necessary to sandwich a film forming process between laser processing processes. As a result, it is possible to reduce the number of laser processing machines to be arranged in the solar cell production line.

  Furthermore, since the separation groove that divides the first electrode film, the separation groove that divides the power generation layer, and the separation groove that divides the second electrode film can be formed at a time, the separation located in the boundary region between the cells is separated. The number of grooves becomes one, and it becomes easy to narrow the non-power generation region in the thin-film solar cell product.

  In the insulating treatment step, it is preferable that the insulator is irradiated with laser light to be fired, sintered, dried or cured.

  Moreover, when apply | coating a conductor in the said short circuit process process, the conductor may short-circuit to the 2nd electrode film located in the side edge part of the other side of the said isolation | separation groove | channel. If it does so, the structure which connects a cell and a cell in series will be impaired, and electric power generation performance will be impaired. Therefore, in the short-circuiting process, it is preferable to form a concave groove that cuts off the short-circuit between the conductor and the second electrode film located on the other side edge of the separation groove, if necessary.

  In the insulation treatment step, an insulator is applied so as to fill substantially the entire separation groove formed in the laser processing step, and in the short-circuit treatment step, the insulator is cut to form a concave groove. If the first conductive film located on the other side edge of the separation groove is exposed in the groove, and the conductor is short-circuited to the first conductive film through the concave groove, The required accuracy for controlling the application positions of the insulator and the conductor is lowered.

  Alternatively, in the insulating treatment step, an insulator is applied so as to fill substantially the entire separation groove formed in the laser processing step, and in the short-circuiting step, the insulating groove is positioned on the other side edge portion of the separation groove. The power generation layer and the second conductive film are cut to form a concave groove, and the first conductive film located at the side edge portion on the other side of the separation groove is exposed in the concave groove. The conductor may be short-circuited to the first conductive film.

  As a manufacturing apparatus for carrying out this manufacturing method, a laser beam irradiation means for a laser processing step for forming a separation groove that divides a first electrode film, a power generation layer and a second electrode film on a substrate into cell units. And an application means for applying an insulating process for applying an insulator covering the first electrode film and the power generation layer at one side edge of the separation groove formed in the laser processing process, and applying in the insulating process process. Conductive to electrically short-circuit the second electrode film located at one side edge of the separation groove and the first electrode film located at the other side edge of the separation groove, overlaid on the insulator The thing provided with the application means for the short circuit process process which apply | coats a body is considered. With such a manufacturing apparatus, it is possible to execute a laser processing step, an insulation treatment step, and a short-circuit treatment step collectively.

  It is preferable that the manufacturing apparatus includes a laser beam irradiation unit that irradiates the insulator with a laser beam in the insulating treatment step to perform firing, sintering, drying, or curing of the insulator.

  The manufacturing apparatus includes a laser beam irradiation unit that forms a concave groove that cuts off a short circuit between the conductor and the second electrode film located on the other side edge of the separation groove in the short-circuiting process. You may do.

  The manufacturing apparatus is a laser that cuts the insulator in the short-circuit processing step to form a groove, and exposes the first conductive film located on the other side edge of the separation groove in the groove. A light irradiation means may be provided.

  Alternatively, the manufacturing apparatus includes laser light irradiation means for cutting the power generation layer and the second conductive film located on the other side edge of the separation groove in the short-circuit processing step to form a concave groove. It may be.

  ADVANTAGE OF THE INVENTION According to this invention, the number of the laser processing machines which should be arrange | positioned in the manufacturing line of a thin film solar cell can be reduced, and / or the improvement of the electric power generation efficiency of a thin film solar cell product can be anticipated.

The figure which shows the procedure of the manufacturing method of the thin film solar cell of one Embodiment of this invention. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the structure of the battery completed with the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of one Embodiment of this invention. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the structure of the battery completed with the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of one Embodiment of this invention. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the procedure of the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the structure of the battery completed with the manufacturing method of the thin film solar cell of the embodiment. The figure which shows the modification of this invention. The figure which shows the modification of this invention. The figure which shows the modification of this invention. The figure which shows the modification of this invention. The figure which shows the modification of this invention.

  Embodiments of the present invention will be described with reference to the drawings. Each of the embodiments described below is primarily intended for the production of silicon-based thin film solar cells. However, it does not prevent application of the present invention to the manufacture of solar cells such as CIGS type and organic thin film type.

<First Embodiment> The method of manufacturing a thin film solar cell of this embodiment shown in FIGS. 1 to 7 includes the following steps.
(A) Film formation of transparent conductive film (b) Film formation of silicon film (c) Film formation of back electrode film (d) Separation groove formation of transparent conductive film, silicon film and back electrode film (e) In the separation groove Insulation between the transparent conductive film and the back electrode film (f) Short circuit between the transparent conductive film and the back electrode film in the separation groove As shown in FIG. A transparent conductive film 1 (in particular, a TCO film) as an electrode film is deposited on the transparent substrate 0 by a CVD method or the like. However, today, glass substrates on which the transparent conductive film 1 has been formed in advance for the production of solar cells and the like are commercially available. If such a substrate is available, the step (a) can be omitted.

  In the film forming step (b), a silicon film 2 (an amorphous semiconductor film, a multilayer of an amorphous semiconductor film and a microcrystalline semiconductor film) as a power generation layer is deposited on the transparent conductive film 1 by a CVD method or the like. . At this time, the constituent material of the silicon film 2 enters the separation groove 11 previously formed in the transparent conductive film 1.

  In the film forming step (c), a back electrode film (particularly a metal film) 3 as a second electrode film is deposited on the silicon film 2 by a sputtering method or the like.

  As shown in FIG. 2, in the laser processing step (d), a plurality of separation grooves 11 that irradiate laser beams 41 and 42 to divide the transparent conductive film 1, the silicon film 2, and the back electrode film 3 into cell units. 21 are formed by cutting. The laser beams 41 and 42 are, for example, a near-infrared laser having a wavelength of 1064 nm or a second harmonic visible light (green) laser having a wavelength of 532 nm. The laser beams 41 and 42 are irradiated through the transparent substrate 0 from the transparent substrate 0 side. The laser light 41 having a wavelength of 1064 nm mainly cuts the transparent conductive film 11. In turn, the laser beam 42 having a wavelength of 532 nm is hardly absorbed by the transparent conductive film 1 but exclusively absorbed by the silicon layer 2. The silicon film 2 that has absorbed the energy of the laser beam 42 is blown off together with the back electrode film 3 superposed thereon. Therefore, the deep bottom isolation groove 21 that penetrates both the back electrode film 3 and the silicon film 2 is collectively formed. The groove width of the separation groove 21 that penetrates the back electrode film 3 and the silicon film is larger than the groove width of the separation groove 11 that is formed in the transparent conductive film 1 and communicates therewith. The irradiation position (or laser optical axis) of the laser beam 42 with a wavelength of 532 nm is superimposed on that of the laser beam 41 with a wavelength of 1064 nm. The laser beam 41 and the laser beam 42 can be irradiated simultaneously, or either one can be irradiated first and the other can be irradiated later. Laser light for forming the separation grooves 11 and 21 may be irradiated from the back electrode film 3 side.

  As shown in FIG. 3, in the insulating treatment step (e), the transparent conductive film 1 and silicon are formed on the side edge of one side (right side in the figure, the same applies hereinafter) of the separation grooves 11 and 21 formed in (d). An insulator 6 that covers the film 2 is applied. The insulator 6 prevents an electrical short circuit between the back electrode film 3 located on one side edge of the separation groove 21 and the transparent conductive film 1 located on the same side edge of the separation groove 11. Is for. The insulator 6 is applied by using a dispenser that is a liquid ejection device, an ink jet nozzle (head) 81 or the like as an application unit. This coating means discharges the liquid or paste-like insulator 6 from the back electrode film 3 side toward the separation grooves 11 and 21. A part of the discharged insulator 6 enters the separation groove 11, and the rest covers the silicon film 2 located on one side edge of the separation groove 21. The insulator 6 that has entered the separation groove 11 may completely fill the separation groove 11 as shown on the right side in FIG. 3, or may be separated as shown on the left side in FIG. The groove 11 may not be completely filled.

  Thereafter, the applied insulator 6 is cured. As shown in FIG. 4, in this embodiment, the insulator 6 is fired (or sintered) by irradiating the insulator 6 with a laser beam 43. The laser beam 43 is, for example, a long-wavelength laser such as a near-infrared laser having a wavelength of 1064 nm, a second harmonic visible light laser having a wavelength of 532 nm, or a carbon dioxide gas laser having a wavelength of 10.6 μm. The laser beam 43 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 4, or the back electrode film as shown on the right side in FIG. You may irradiate directly from the 3 side, without making the transparent substrate 0 permeate | transmit.

  As shown in FIG. 5, in the short-circuit treatment step (f), a conductor 7 (particularly, silver) that covers the insulator 6 is applied so as to overlap the insulator 6 applied in (e). The conductor 7 includes the back electrode film 3 located on one side edge of the separation groove 21 and the transparent conductive film 1 located on the other edge of the separation groove 11 (left side in the figure, the same applies hereinafter). Are electrically short-circuited. The conductor 7 is also applied using a dispenser, an ink jet nozzle, or the like 82, which is a liquid ejection device, as an application means. This coating means discharges the liquid or paste-like conductor 7 from the back electrode film 3 side toward the separation groove 21. The discharged conductor 7 is in contact with the back electrode film 3 located at the side edge on one side of the separation groove 21 so as to cover the insulator 6. Further, as shown on the right side in FIG. 5, the conductor 7 is in contact with the transparent electrode film 1 located on the other side edge of the separation groove 11 or in contact with the transparent electrode film 1 in FIG. As shown on the left side, the transparent electrode film 1 located on the other side edge of the separation groove 11 is brought into contact with the separation groove 11 by entering the separation groove 11. In any case, it is necessary to form a gap between the back electrode film 3 located on the other side edge of the separation groove 21 and the conductor 7 so as not to short-circuit them.

  Thereafter, the applied conductor 7 is cured. As shown in FIG. 6, in this embodiment, the conductor 7 is fired (or sintered) by irradiating the conductor 7 with laser light 44. The laser beam 44 is, for example, a near infrared laser having a wavelength of 1064 nm or a second harmonic visible light laser having a wavelength of 532 nm. The laser beam 44 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 6, or the back electrode film as shown on the right side in FIG. You may irradiate directly from the 3 side, without making the transparent substrate 0 permeate | transmit.

  Through the above steps (a) to (f), as shown by arrows in FIG. 7, a path for electric charges through the conductor 7 applied in (f) is completed. The non-power generation region is a range of the groove width of the separation groove 21 formed in (d).

  Steps (d) to (f) included in the manufacturing method of the present embodiment can be performed by a single manufacturing apparatus. The manufacturing apparatus for carrying out the laser processing step (d), the insulation treatment step (e) and the short-circuit treatment step (f) forms the separation grooves 11 and 21 in the transparent conductive film 1, the silicon film 2 and the back electrode film 3. Laser beam irradiation means for forming the separation grooves 11 and 21 for irradiating the laser beams 41 and 42 to be formed, and insulation covering the transparent conductive film 1 and the silicon film 2 at one side edge of the formed separation grooves 11 and 21 A means for applying the insulator 6 for applying the body 6, a laser beam irradiation means for baking the applied insulator 6, and a side edge portion on one side of the separation groove 21 so as to overlap the fired insulator 6. A conductor 7 applying means for applying a conductor 7 for electrically short-circuiting the back electrode film 3 and the transparent conductive film 1 located on the other side edge of the separation groove 11.

  The laser beam irradiation means for forming the separation grooves 11 and 12 includes an optical system for propagating a pulse laser having a wavelength of 1064 nm and a wavelength of 532 nm (second harmonic) oscillated by a laser oscillator, and a pulse laser supplied through the optical system. Is combined with a processing nozzle 51 that emits the light toward the laminated films 1, 2, and 3 formed on the processing surface of the substrate 0. The optical system can be configured using any optical element such as an optical fiber, a mirror, and a lens. As described above, the laser beam 41 with a wavelength of 1064 nm cuts and forms the separation groove 11 in the transparent conductive film 1, and the laser beam 42 with a wavelength of 532 nm cuts the separation groove 21 that penetrates the back electrode film 3 and the silicon film 2. To form. The laser beam 41 having a wavelength of 1064 nm and the laser beam 42 having a wavelength of 532 nm may be emitted from the same processing nozzle 51 as shown in FIG. 2 or may be emitted from separate processing nozzles.

  The application means for the insulator 6 includes a dispenser or an inkjet nozzle 81 that discharges the insulator 6 from the back electrode film 3 side toward the separation grooves 11 and 21.

  The laser beam irradiation means for firing the insulator 6 applies an optical system for propagating a pulse laser with a wavelength of 1064 nm or 532 nm oscillated by a laser oscillator, and a pulse laser supplied via the optical system to the processing surface of the substrate 0 The processing nozzle 52 that emits light toward the insulator 6 is combined. These optical system and processing nozzle 52 may be shared with the optical system and processing nozzle 51 of the laser beam irradiation means for forming the separation grooves 11 and 21.

  The means for applying the conductor 7 includes a dispenser or an ink jet nozzle 82 that discharges the conductor 7 from the back electrode film 3 side toward the separation grooves 11 and 21.

  The laser beam irradiation means for firing the conductor 7 includes an optical system for propagating a pulse laser or CW (continuous wave) laser with a wavelength of 1064 nm or 532 nm oscillated by a laser oscillator, and a laser supplied via the optical system. And a processing nozzle 53 that emits light toward the insulator 6 applied to the surface to be processed. These optical system and processing nozzle 53 are common to the optical system and processing nozzle 51 of the laser light irradiation means for forming the separation grooves 11 and 21 and the optical system and processing nozzle 52 of the laser light irradiation means for firing the insulator 6. It does not matter.

  The processing nozzles 51, 52, 53, dispensers or inkjet nozzles 81, 82 are provided so as to be relatively displaceable with respect to the substrate 0. Typically, the separation grooves 11 and 21 formed in the thin films 1, 2 and 3 can reciprocate in the extending Y-axis direction, and the X-axis direction perpendicular to the Y-axis direction (cells functioning as photovoltaic elements) The processing nozzles 51, 52, 53 and the dispenser or inkjet nozzles 81, 82 are supported on a linear motor carriage or the like that can move by pitch feed in the direction in which the cells are aligned and the direction in which the separation grooves 11, 21 are aligned. For the convenience of partitioning a large number of cells by the separation grooves 11 and 21, it is desirable that a plurality of these processing nozzles 51, 52 and 53 and dispensers or inkjet nozzles 81 and 82 are arranged in the X-axis direction. In this connection, instead of moving the processing nozzles 51, 52, 53 and the dispenser or inkjet nozzle 81, 82 in the X-axis direction and / or the Y-axis direction with respect to the stationary substrate 0, the substrate 0 itself is moved to the processing nozzle 51. 52, 53 and a dispenser or an inkjet nozzle 81, 82 may be mounted with a mechanism capable of moving in the X-axis direction and / or the Y-axis direction.

  According to this embodiment, the laser processing step (d) for forming the separation grooves 11 and 21 that divide the first electrode film 1, the power generation layer 2 and the second electrode film 3 on the substrate into cell units, An insulation treatment step (e) for applying an insulator 6 covering the first electrode film 1 and the power generation layer 2 on one side edge of the separation grooves 11 and 21 formed in the laser processing step; and an insulation treatment step The second electrode film 3 located on one side edge of the separation groove 21 and the first electrode film 1 located on the other side edge of the separation groove 11, overlaid on the insulator 6 applied in step 1. Therefore, the first electrode film 1, the power generation layer 2, and the second power generation layer 2 are applied. The film forming step (a, b, c) of the electrode film 3 can be arranged before the laser processing step (d). That is, it is not necessary to sandwich a film forming process between laser processing processes. As a result, it is possible to reduce the number of laser processing machines to be arranged in the solar cell production line, leading to a reduction in the space occupied by the production line. If the production line becomes simple, the product substrate 0 is less likely to stay in the middle of the production line, which contributes to a reduction in tact time and a reduction in production cost.

  In addition, the number of separation grooves 11 and 21 formed in the boundary region between cells is reduced from the conventional three to one. As a result, the non-power generation area in the thin-film solar cell product can be reduced, that is, the effective power generation area can be expanded, and the power generation efficiency can be further improved.

  As a point to be noted with the manufacturing method of the present embodiment, in the short-circuit treatment step (f), the conductor 7 to be applied is short-circuited to the second electrode film 3 located on the other side edge of the separation groove 21. It is not necessary. If the conductor 7 and the second electrode film 3 located on the other side edge of the separation groove 21 are short-circuited, the first electrode film 1 and the second electrode film 3 in one cell are This is because a short circuit occurs and the cell does not function as a solar battery, resulting in a decrease in power generation performance.

  When the applied conductor 7 is short-circuited to the second electrode film 3 located at the other side edge of the separation groove 21, as shown in FIG. As a part, an additional treatment for forming a concave groove 31 for breaking a short circuit between the conductor 7 and the second electrode film 3 is performed. The concave groove 31 is formed by cutting the conductor 7 and / or the second conductive film 3 at the short-circuit portion. In the illustrated example, not only the conductor 7 and the second conductive film 3 but also the power generation layer 2 is cut. The concave groove 31 is formed by irradiating a laser beam 45 to the short-circuited portion. The laser beam 45 is, for example, a near infrared laser having a wavelength of 1064 nm or a second harmonic visible light laser having a wavelength of 532 nm. The laser beam 45 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 8, or the back electrode film as shown on the right side in FIG. You may irradiate directly from the 3 side, without making the transparent substrate 0 permeate | transmit.

  The laser beam irradiation means for forming the groove 31 to be provided in the laser processing apparatus is supplied via an optical system for propagating a pulse laser or continuous wave laser having a wavelength of 1064 nm or 532 nm oscillated by a laser oscillator, and the optical system. And a processing nozzle 54 that emits a laser beam toward a short-circuited portion between the conductor 7 and the second electrode film 3. These optical system and processing nozzle 54 are the optical system and processing nozzle 51 of the laser light irradiation means for forming the separation grooves 11 and 21, the optical system and processing nozzle 52 of the laser light irradiation means for firing the insulator 6, and Alternatively, the optical system of the laser light irradiation means for firing the conductor 7 and the processing nozzle 53 may be shared.

<Second Embodiment> The method for manufacturing a thin-film solar cell of this embodiment shown in FIGS. 9 to 14 includes the following steps.
(A) Film formation of transparent conductive film (b) Film formation of silicon film (c) Film formation of back electrode film (d) Formation of separation groove of transparent conductive film, silicon film and back electrode film (e ') In separation groove Insulation (f ′) between the transparent conductive film and the back electrode film in the short circuit between the transparent conductive film and the back electrode film in the separation groove (a, b, c), forming the separation groove The laser processing step (d) to be performed is as shown in FIGS. 1 and 2 and described in the description of the first embodiment.

  As shown in FIG. 9, in the insulating treatment step (e ′), the insulator 6 that covers the transparent conductive film 1 and the silicon film 2 is formed on one side edge of the separation grooves 11 and 21 formed in (d). Apply. The difference from the first embodiment is that, in the first embodiment, a gap is provided between the side edge of the other side of the separation groove 21 and the insulator 6, whereas in this embodiment, the separation groove 21 A gap is not provided between the side edge portion on the other side and the insulator 6, and the separation grooves 11 and 21 are filled with the insulator 6. That is, the required accuracy of control of the application position of the insulator 6 is lower than in the first embodiment. The insulator 6 may cover the transparent conductive film 1 and the silicon film 2 at the other side edge of the separation grooves 11 and 21. The insulator 6 is applied by using a dispenser or an ink jet nozzle 81 that is a liquid discharge device as an application means. This coating means discharges the liquid or paste-like insulator 6 from the back electrode film 3 side toward the separation grooves 11 and 21. The discharged insulator 6 covers the silicon film 2 located at both side edges of the separation groove 21 while entering the separation grooves 11 and 21.

  Thereafter, the applied insulator 6 is cured as in the first embodiment. As shown in FIG. 10, the insulator 6 is fired (or sintered) by irradiating the insulator 6 with a laser beam 43. The laser beam 43 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 10, or the back electrode film 3 as shown on the right side in FIG. You may irradiate directly, without making the transparent substrate 0 permeate | transmit from the side.

  As shown in FIGS. 11 and 12, in the short-circuit treatment step (f ′), first, the insulator 6 is irradiated with the laser light 46 to cut the insulator 6 to form the groove 61. The transparent conductive film 1 located on the other side edge of the separation groove 11 is exposed inside. The laser light 46 is, for example, a near infrared laser with a wavelength of 1064 nm or a green laser with a wavelength of 532 nm. The laser beam 46 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 11, or the back electrode film 3 as shown on the right side in FIG. You may irradiate directly, without making the transparent substrate 0 permeate | transmit from the side. In addition, the concave groove 61 may be formed by cutting only the insulator 6 as shown on the right side in FIG. 11 or transparent together with the insulator 6 as shown on the left side in FIG. The conductive film 1 may also be formed by cutting.

  Then, the conductor 7 covering the insulator 6 is applied in the concave groove 61 and over the insulator 6 applied previously. The conductor 7 is located on the other side edge of the separation groove 11 and the back electrode film 3 located on the one side edge of the separation groove 21 via the groove 61 (and the groove). The transparent conductive film 1 (exposed in 61) is electrically short-circuited. The conductor 7 is applied using a dispenser, an ink jet nozzle, or the like 82 that is a liquid ejection device as an application means. This coating means discharges the liquid or paste-like conductor 7 from the back electrode film 3 side into the separation groove 21 and the concave groove 61. The discharged conductor 7 is in contact with the back electrode film 3 located at the side edge on one side of the separation groove 21 so as to cover the insulator 6. Further, as shown on the right side in FIG. 12, the conductor 7 is in contact with the transparent electrode film 1 at the bottom of the concave groove 61 or on the left side in FIG. Thus, it contacts the transparent electrode film 1 at the other side end of the groove 61. In any case, it is necessary to keep the back electrode film 3 located on the other side edge of the separation groove 21 and the conductor 7 from being short-circuited.

  Thereafter, the applied conductor 7 is cured. As shown in FIG. 13, in this embodiment, the conductor 7 is fired (or sintered) by irradiating the conductor 7 with laser light 44. The laser beam 44 is, for example, a near infrared laser having a wavelength of 1064 nm or a second harmonic visible light laser having a wavelength of 532 nm. The laser beam 44 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 13, or the back electrode film as shown on the right side in FIG. You may irradiate directly from the 3 side, without making the transparent substrate 0 permeate | transmit.

  Through the above steps (a) to (f ′), as shown by an arrow in FIG. 14, a path for electric charges through the conductor 7 applied in (f ′) is completed. The non-power generation region is a range of the groove width of the separation groove 21 formed in (d).

  Steps (d) to (f ′) included in the manufacturing method of the present embodiment can be performed by a single manufacturing apparatus. The manufacturing apparatus for carrying out the laser processing step (d), the insulation treatment step (e ′) and the short-circuit treatment step (f ′) has separation grooves 11, 21 in the transparent conductive film 1, the silicon film 2 and the back electrode film 3. A laser beam irradiating means for forming the separation grooves 11 and 21 for irradiating the laser beams 41 and 42 to form the transparent conductive film 1 and the silicon film 2 on one side edge of the formed separation grooves 11 and 21 Insulator 6 application means for applying insulator 6 to be applied, firing laser light irradiation means for firing applied insulator 6, laser light irradiation means for forming concave grooves 61 in insulator 6, and insulator A conductor 7 that overlaps 6 and electrically short-circuits the back electrode film 3 located at one side edge of the separation groove 21 and the transparent conductive film 1 located at the other side edge of the separation groove 11. And means for applying the conductor 7 to be applied.

  Laser beam irradiating means for forming the separation grooves 11 and 12, insulator 6 applying means, insulator 6 firing laser light irradiating means, conductor 7 applying means and conductor 7 firing laser light irradiating means are respectively provided. The configuration can be the same as in the first embodiment.

  The laser beam irradiation means for forming the concave groove 61 includes an optical system for propagating a pulsed laser or continuous wave laser having a wavelength of 1064 nm or 532 nm oscillated by a laser oscillator, and a laser supplied via the optical system. A processing nozzle 55 that emits light toward the insulator 6 applied to the surface is combined. These optical system and processing nozzle 55 are the optical system and processing nozzle 51 of the laser light irradiation means for forming the separation grooves 11 and 21, the optical system and processing nozzle 52 of the laser light irradiation means for firing the insulator 6, and Alternatively, the optical system of the laser light irradiation means for firing the conductor 7 and the processing nozzle 53 may be shared.

  The processing nozzles 51, 52, 53, 55, dispensers or inkjet nozzles 81, 82 are provided so as to be relatively displaceable with respect to the substrate 0. Typically, a linear motor carriage or the like that can reciprocate in the Y-axis direction in which the separation grooves 11 and 21 formed in the thin films 1, 2, and 3 extend, and that can move by pitch feed in the X-axis direction orthogonal to the Y-axis direction. The processing nozzles 51, 52, 53, 55 and the dispenser or inkjet nozzles 81, 82 are supported. For the purpose of partitioning a large number of cells by the separation grooves 11 and 21, it is desirable that a plurality of these processing nozzles 51, 52, 53 and 55 and dispensers or inkjet nozzles 81 and 82 are arranged in the X-axis direction. Incidentally, the processing nozzle 51, 52, 53, 55 and the dispenser or the inkjet nozzle 81, 82 are moved in the X axis direction and / or the Y axis direction with respect to the stationary substrate 0, and the substrate 0 itself is processed. It is also conceivable to mount a mechanism capable of moving in the X-axis direction and / or the Y-axis direction with respect to the nozzles 51, 52, 53, 55 and the dispensers or inkjet nozzles 81, 82.

  According to this embodiment, the laser processing step (d) for forming the separation grooves 11 and 21 that divide the first electrode film 1, the power generation layer 2 and the second electrode film 3 on the substrate into cell units, An insulation treatment step (e ′) for applying an insulator 6 covering the first electrode film 1 and the power generation layer 2 at one side edge of the separation grooves 11 and 21 formed in the laser processing step; The second electrode film 3 located on one side edge of the separation groove 21 and the first electrode film located on the other side edge of the separation groove 11 are superimposed on the insulator 6 applied in the process. Since the manufacturing method of the thin film solar cell which comprises the short-circuit processing process (f ') which apply | coats the conductor 7 which electrically short-circuits 1 is implemented, the 1st electrode film 1, the electric power generation layer 2, and the 1st The film forming step (a, b, c) of the second electrode film 3 can be arranged before the laser processing step (d). That is, it is not necessary to sandwich a film forming process between laser processing processes. As a result, it is possible to reduce the number of laser processing machines to be arranged in the solar cell production line, leading to a reduction in the space occupied by the production line. If the production line becomes simple, the product substrate 0 is less likely to stay in the middle of the production line, which contributes to a reduction in tact time and a reduction in production cost.

  In addition, in the insulation treatment step (e ′), an insulator 6 is applied so as to fill substantially the entire region of the separation grooves 11 and 21 formed in the laser processing step (d), and the short-circuit treatment step (f ′ ), The insulator 6 is cut to form a concave groove 61, and the first conductive film 1 located on the other side edge of the separation groove 11 is exposed in the concave groove 61. Since the conductor 7 is short-circuited to the first conductive film 1 through the concave groove 61, the accuracy of control of the application position of the insulator 6 and the conductor 7 by the dispenser or the ink jet nozzles 81 and 82, etc. Even if it is not necessarily high, it becomes possible to produce a solar cell that exhibits sufficient power generation performance.

  As a point to be noted with the manufacturing method of the present embodiment, in the short-circuit treatment step (f ′), the conductor 7 to be applied is short-circuited to the second electrode film 3 located on the other side edge of the separation groove 21. It must not be. If the conductor 7 and the second electrode film 3 located on the other side edge of the separation groove 21 are short-circuited, the first electrode film 1 and the second electrode film 3 in one cell are This is because a short circuit occurs and the cell does not function as a solar battery, resulting in a decrease in power generation performance.

  When the applied conductor 7 is short-circuited to the second electrode film 3 located on the other side edge of the separation groove 21, as shown in FIG. 15, the short-circuiting process (f ′) As a part, an additional treatment for forming a concave groove 31 for breaking a short circuit between the conductor 7 and the second electrode film 3 is performed. The concave groove 31 is formed by cutting the conductor 7 and / or the second conductive film 3 at the short-circuit portion. In the illustrated example, not only the conductor 7 and the second conductive film 3 but also the power generation layer 2 is cut. The concave groove 31 is formed by irradiating a laser beam 45 to the short-circuited portion. The laser beam 45 is, for example, a near infrared laser having a wavelength of 1064 nm or a second harmonic visible light laser having a wavelength of 532 nm. The laser beam 45 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 15, or the back electrode film as shown on the right side in FIG. You may irradiate directly from the 3 side, without making the transparent substrate 0 permeate | transmit.

  The laser beam irradiation means for forming the groove 31 to be provided in the laser processing apparatus is supplied via an optical system for propagating a pulse laser or continuous wave laser having a wavelength of 1064 nm or 532 nm oscillated by a laser oscillator, and the optical system. And a processing nozzle 54 that emits a laser beam toward a short-circuited portion between the conductor 7 and the second electrode film 3. These optical systems and processing nozzles 54 form the optical system and processing nozzle 51 of the laser light irradiation means for forming the separation groove, the optical system and processing nozzle 52 of the laser light irradiation means for firing the insulator 6, and the concave groove 61. The optical system and processing nozzle 55 of the laser light irradiation means for use and / or the optical system and processing nozzle 53 of the laser light irradiation means for firing the conductor 7 may be used in common.

<Third Embodiment> The method for manufacturing a thin-film solar cell of this embodiment shown in FIGS. 16 to 20 includes the following steps.
(A) Film formation of transparent conductive film (b) Film formation of silicon film (c) Film formation of back electrode film (d) Formation of separation groove of transparent conductive film, silicon film and back electrode film (e ') In separation groove Insulation (f ″) between the transparent conductive film and the back electrode film in the short circuit between the transparent conductive film and the back electrode film in the separation groove (a, b, c), The laser processing step (d) to be formed is as shown in FIGS. 1 and 2 and described in the description of the first embodiment. Further, the insulating treatment step (e ′) is as shown in FIGS. 9 and 10 and described in the description of the second embodiment.

  As shown in FIGS. 16 and 17, in the short-circuit processing step (f ″), first, the laser beam 47 is irradiated to the silicon film 2 and the back electrode film 3 located on the other side edge of the separation groove 21. Then, the silicon film 2 and the back electrode film 3 are cut to form the concave groove 22, thereby exposing the transparent conductive film 1 located on the other side edge of the separation groove 11 in the concave groove 22. The laser beam 47 is, for example, a near infrared laser with a wavelength of 1064 nm or a green laser with a wavelength of 532 nm. The laser beam 47 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 16, or the back electrode film 3 as shown on the right side in FIG. You may irradiate directly, without making the transparent substrate 0 permeate | transmit from the side. In addition, the concave groove 22 may be formed by cutting only the silicon film 2 and the back electrode film 3 (without cutting the transparent conductive film 1) as shown on the right side in FIG. As shown on the left side in FIG. 16, the transparent conductive film 1 may be cut and formed together with the silicon film 2 and the back electrode film 3.

  Then, the conductor 7 that covers the insulator 6 is applied in the groove 22 and over the insulator 6 applied previously. The conductor 7 is located on the side electrode on the one side of the separation groove 21 and the side edge on the other side of the separation groove 11 via the groove 22 (and the groove). The transparent conductive film 1 (exposed in 22) is electrically short-circuited. The conductor 7 is applied using a dispenser, an ink jet nozzle, or the like 82 that is a liquid ejection device as an application means. This coating means discharges the liquid or paste-like conductor 7 from the back electrode film 3 side toward the separation groove 21 and the concave groove 22. The discharged conductor 7 is in contact with the back electrode film 3 located at the side edge on one side of the separation groove 21 so as to cover the insulator 6. Further, as shown on the right side in FIG. 17, the conductor 7 is in contact with the transparent electrode film 1 at the bottom of the groove 22 or on the left side in FIG. Thus, it contacts the transparent electrode film 1 at the side end on the other side of the groove 22. Although not shown in the illustrated example, the conductor 7 is not short-circuited so that the back electrode film 3 and the conductor 7 located on the other side of the groove 22, that is, the side edge far from the separation groove 21, are not short-circuited. It may be applied. Then, the cutting formation procedure of the concave groove 31 shown in FIG. 19 becomes unnecessary.

  Thereafter, the applied conductor 7 is cured. As shown in FIG. 18, in the present embodiment, the conductor 7 is fired (or sintered) by irradiating the conductor 7 with a laser beam 44. The laser beam 44 is, for example, a near infrared laser having a wavelength of 1064 nm or a second harmonic visible light laser having a wavelength of 532 nm. The laser beam 44 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 18, or the back electrode film as shown on the right side in FIG. You may irradiate directly from the 3 side, without making the transparent substrate 0 permeate | transmit.

  Furthermore, since the applied conductor 7 is short-circuited to the second electrode film 3 located on the other side edge of the concave groove 22, as shown in FIG. ), An additional treatment for forming a concave groove 31 for breaking the short circuit between the conductor 7 and the second electrode film 3 is performed. The concave groove 31 is formed by cutting the conductor 7 and / or the second conductive film 3 at the short-circuit portion. In the illustrated example, not only the conductor 7 and the second conductive film 3 but also the power generation layer 2 is cut. The concave groove 31 is formed by irradiating a laser beam 45 to the short-circuited portion. The laser beam 45 is, for example, a near infrared laser having a wavelength of 1064 nm or a second harmonic visible light laser having a wavelength of 532 nm. The laser light 45 may be irradiated through the transparent substrate 0 from the transparent substrate 0 side as shown on the left side in FIG. 19, or the back electrode film as shown on the right side in FIG. You may irradiate directly from the 3 side, without making the transparent substrate 0 permeate | transmit.

  Through the above steps (a) to (f ″), as shown by an arrow in FIG. 20, a path for charges through the conductor 7 applied in (f ″) is completed. The non-power generation region is a range of the groove width of the separation groove 21 formed in (d) and the groove 22 formed in (f ″).

  Steps (d) to (f ″) included in the manufacturing method of the present embodiment can be performed by a single manufacturing apparatus. The manufacturing apparatus for carrying out the laser processing step (d), the insulation treatment step (e ′), and the short-circuit treatment step (f ″) includes a separation groove 11 in the transparent conductive film 1, the silicon film 2 and the back electrode film 3. The separation grooves 11 that irradiate the laser beams 41 and 42 that form 21, laser light irradiation means for forming the 21, and the transparent conductive film 1 and the silicon film 2 are formed on one side edge of the formed separation grooves 11 and 21. Insulator 6 application means for applying the insulator 6 to be coated, laser light irradiation means for firing the applied insulator 6, laser light irradiation means for forming the concave grooves 22 in the insulator 6, insulation Conductor 7 for electrically short-circuiting back electrode film 3 located on one side edge of separation groove 21 and transparent conductive film 1 located on the other side edge of separation groove 11 on body 6. And applying means for applying the conductor 7.

  Laser beam irradiating means for forming the separation grooves 11 and 12, insulator 6 applying means, insulator 6 firing laser light irradiating means, conductor 7 applying means and conductor 7 firing laser light irradiating means are respectively provided. The configuration can be the same as in the first embodiment.

  The laser beam irradiation means for forming the concave groove 22 includes an optical system for propagating a pulsed laser or continuous wave laser having a wavelength of 1064 nm or 532 nm oscillated by a laser oscillator, and a laser supplied via the optical system. A processing nozzle 56 that emits light toward the insulator 6 applied to the surface is combined. These optical system and processing nozzle 56 are the optical system and processing nozzle 51 of the laser light irradiation means for forming the separation grooves 11 and 21, the optical system and processing nozzle 52 of the laser light irradiation means for firing the insulator 6, and Alternatively, the optical system of the laser light irradiation means for firing the conductor 7 and the processing nozzle 53 may be shared.

  The laser beam irradiation means for forming the concave groove 31 includes an optical system for propagating a pulsed laser or continuous wave laser having a wavelength of 1064 nm or 532 nm oscillated by a laser oscillator, and a laser supplied via the optical system and the conductor 7. A processing nozzle 54 that emits light toward a short-circuited portion with the second electrode film 3 is combined. These optical system and processing nozzle 54 are formed with an optical system and processing nozzle 51 for laser beam irradiation means for forming separation grooves, an optical system and processing nozzle 52 for forming laser light for the insulator 6 firing, and a concave groove 22 formation. The optical system and processing nozzle 56 of the laser light irradiation means for use and / or the optical system and processing nozzle 53 of the laser light irradiation means for firing the conductor 7 may be used in common.

  The processing nozzles 51, 52, 53, 54, 56, dispensers or inkjet nozzles 81, 82 are provided so as to be relatively displaceable with respect to the substrate 0. Typically, a linear motor carriage or the like that can reciprocate in the Y-axis direction in which the separation grooves 11 and 21 formed in the thin films 1, 2, and 3 extend, and that can move by pitch feed in the X-axis direction orthogonal to the Y-axis direction. Further, the processing nozzles 51, 52, 53, 54, 56 and the dispenser or inkjet nozzles 81, 82 are supported. For the convenience of partitioning a large number of cells by the separation grooves 11 and 21, these processing nozzles 51, 52, 53, 54, and 56 and a plurality of dispensers or inkjet nozzles 81 and 82 may be arranged in the X-axis direction. desirable. Incidentally, instead of moving the processing nozzles 51, 52, 53, 54, 56 and the dispenser or inkjet nozzle 81, 82 in the X-axis direction and / or the Y-axis direction with respect to the stationary substrate 0, the substrate 0 itself It is also conceivable to mount a mechanism capable of moving the processing nozzles 51, 52, 53, 54, 56 and the dispenser or inkjet nozzles 81, 82 in the X-axis direction and / or the Y-axis direction.

  According to this embodiment, the laser processing step (d) for forming the separation grooves 11 and 21 that divide the first electrode film 1, the power generation layer 2 and the second electrode film 3 on the substrate into cell units, An insulation treatment step (e ′) for applying an insulator 6 covering the first electrode film 1 and the power generation layer 2 at one side edge of the separation grooves 11 and 21 formed in the laser processing step; The second electrode film 3 located on one side edge of the separation groove 21 and the first electrode film located on the other side edge of the separation groove 11 are superimposed on the insulator 6 applied in the process. Since the manufacturing method of the thin film solar cell which comprises the short circuiting process (f '') which apply | coats the conductor 7 which electrically short-circuits 1 is implemented, the 1st electrode film 1, the electric power generation layer 2, and The film forming step (a, b, c) of the second electrode film 3 can be arranged before the laser processing step (d). That is, it is not necessary to sandwich a film forming process between laser processing processes. As a result, it is possible to reduce the number of laser processing machines to be arranged in the solar cell production line, leading to a reduction in the space occupied by the production line. If the production line becomes simple, the product substrate 0 is less likely to stay in the middle of the production line, which contributes to a reduction in tact time and a reduction in production cost.

  In addition, in the insulation treatment step (e ′), an insulator 6 is applied so as to fill substantially the entire region of the separation grooves 11 and 21 formed in the laser processing step (d), and the short-circuit treatment step (f ′ '), The insulator 6 is cut to form a concave groove 22, and the first conductive film 1 located on the other side edge of the separation groove 11 is exposed in the concave groove 22; Since the conductor 7 is short-circuited to the first conductive film 1 through the concave groove 22, the application position of the insulator 6 and the conductor 7 can be controlled by the dispenser or the ink jet nozzles 81 and 82. Even if the accuracy is not necessarily high, it is possible to manufacture a solar cell that exhibits sufficient power generation performance.

  As a point to be noted with the manufacturing method of the present embodiment, in the short-circuit processing step (f ″), the conductor 7 to be applied is short-circuited to the second electrode film 3 located on the other side edge of the groove 22. It must not be. If the conductor 7 and the second electrode film 3 located on the other side edge of the groove 22 are short-circuited, the first electrode film 1 and the second electrode film 3 in one cell This is because a short circuit occurs and the cell does not function as a solar battery, resulting in a decrease in power generation performance.

  The present invention is not limited to the embodiment described in detail above. In the above-described embodiment, the applied insulator 6 and conductor 7 are cured by laser firing (or sintering), but these can be cured by a method other than laser firing. Depending on the material of the conductor 6 and the conductor 7, it may be advantageous to dry, solidify or fix by a method other than laser firing.

  For example, the coating agent in which the insulator 6 or the conductor 7 is mixed is assumed to have a quick-drying property, and then is naturally dried after coating, UV-cured by irradiating with ultraviolet rays, or heated by a heater or the like and thermally dried or thermally cured. Can be considered. Today, the insulator 6 is often UV-cured and thermally cured, and the conductor 7 is often thermally dried and naturally dried. In such a case, the manufacturing apparatus for performing the laser processing step, the insulation treatment step, and the short-circuit treatment step is replaced with an ultraviolet irradiation light, an LED instead of the laser light irradiation means for firing the insulator 6 and / or the conductor 7. Then, a heater or a dryer will be mounted.

  Equipment (such as a drying furnace) that dries and solidifies the applied insulator 6 and / or conductor 7 by other methods may be provided outside the manufacturing apparatus including the laser beam irradiation means.

  In the insulation treatment steps (e), (e ′) and the short-circuit treatment steps (f), (f ′), (f ″), double cure or dual cure is performed by combining means other than laser light and laser light. The applied insulator 6 and / or conductor 7 may be solidified. That is, after the insulator 6 and / or the conductor 7 is solidified to some extent by UV curing, heat curing, drying, or the like, the insulator 6 and / or the conductor 7 is irradiated with laser light as a finish. In such a case, the manufacturing apparatus for performing the insulation treatment step and the short-circuit treatment step includes a means for UV-curing the insulator 6 and / or the conductor 7, and a laser on the insulator 6 and / or the conductor 7. A laser beam irradiation means for irradiating light is mounted together.

  Prior to the insulating treatment step and the short-circuit treatment step, a pretreatment step may be performed. In the modification shown in FIGS. 21 and 22, after the laser processing step for forming the separation grooves 11, 21, a step of applying and solidifying the insulator 6 on the other side edge of the separation grooves 11, 21, A step of applying and solidifying the conductor 7 over the insulator is performed. FIG. 21 shows a state where these pretreatment steps are performed. Thereafter, as in the above embodiments, the insulator 6 is applied and solidified as an insulating treatment step, and the conductor is applied and solidified as a short-circuit treatment step. FIG. 22 shows a state in which these insulation processing step and short circuit processing step are performed. The conductor 7 applied in the pretreatment process is the first electrode on the second electrode film 2 on the one side edge of the separation groove 21 and the first edge on the other side of the separation groove 11 in the short circuit treatment process. This contributes to a short-circuit connection with the electrode film 1. The insulator 6 applied in the pretreatment step prevents a short circuit between the conductor 7 applied in the pretreatment step (x2) and the second conductive film 2 on the other side edge of the separation groove 21.

  In the modification shown in FIG. 23 to FIG. 25, prior to the laser processing step for forming the separation grooves 11 and 21, the concave groove 23 for exposing the first electrode film 1 is formed by laser scribing, and the concave groove is formed. The conductor 7 is applied in the groove 23. Then, separation grooves 11 and 21 are formed in the side edge portion on one side of the groove 23 in which the conductor 7 is embedded. FIG. 23 shows a state in which these pretreatment process and laser processing process are performed. Then, an insulating treatment process for applying and solidifying the insulator 6 covering at least one side edge of the separation grooves 11 and 21, and a short-circuit treatment for applying and solidifying the conductor 7 over the insulator. Perform the process. FIG. 24 shows a state in which these insulation processing step and short circuit processing step are performed. The conductor 7 applied in the pretreatment process is the first electrode on the second electrode film 2 on the one side edge of the separation groove 21 and the first edge on the other side of the separation groove 11 in the short circuit treatment process. This contributes to a short-circuit connection with the electrode film 1. Furthermore, as shown in FIG. 25, the concave groove 31 for breaking the short circuit between the second conductive film 2 on the other side edge of the concave groove 23 and the conductor 7 applied in the short circuiting process is provided. Additional processing is performed by laser scribing.

  In the said embodiment, although manufacturing of the silicon type thin film solar cell was considered, it is naturally possible to apply the manufacturing method concerning this invention to manufacture of a CIGS type thin film solar cell. When manufacturing a CIGS solar cell, the first electrode film 1 is a back electrode film such as Mo, the power generation layer 2 is a semiconductor film such as CIGS, CIGSS, CIS, and CZTS, and the second electrode film 3 is transparent such as TCO. A conductive film is formed. In this case, P2 processing for cutting only the power generation layer 2 and P3 processing for cutting only the second electrode film 3 are not easy, but it is allowed to cut the power generation layer 2 and the second electrode film 3 at once. The adoption of the present invention contributes to mass production of the solar cell.

  In the case of manufacturing an organic thin film solar cell, the power generation layer 2 becomes a conductive polymer, fullerene or other organic thin film semiconductor. In other words, each of the first electrode film, the power generation layer, and the second electrode film is not uniquely specified. As is clear from the example of the silicon solar cell and the example of the CIGS solar cell, which of the first electrode film 1 and the second electrode film 3 is the transparent conductive film and which is the back electrode film? Needless to say, it is not limited.

  The wavelength of the laser beam used in each of the laser processing step, the insulation treatment step, and the short-circuit treatment step is not limited to that in the above embodiment. It may be a pulse laser or a continuous wave laser.

  In addition, an intermediate layer may be separately provided between the first electrode film and the power generation layer, or between the power generation layer and the second electrode film.

  Other specific configurations of each part can be variously modified without departing from the spirit of the present invention.

  The present invention can be applied to the production of thin film solar cell panels.

DESCRIPTION OF SYMBOLS 0 ... Board | substrate 1 ... 1st electrode film 11 ... Separation groove 2 ... Power generation layer 21 ... Separation groove 22 ... Concave groove 3 ... Second electrode film 31 ... Concave groove 6 ... Insulator 61 ... Concave groove 7 ... Conductor

Claims (10)

A laser processing step of forming a separation groove for dividing the first electrode film, the power generation layer and the second electrode film on the substrate into cell units;
An insulating treatment step of applying an insulator covering the first electrode film and the power generation layer at the side edge portion on one side of the separation groove formed in the laser processing step;
A second electrode film located on one side edge of the separation groove and a first electrode film located on the other side edge of the separation groove are stacked on the insulator applied in the insulation treatment step. The manufacturing method of a thin film solar cell which comprises the short-circuiting process of apply | coating the conductor which electrically short-circuits. The method for manufacturing a thin-film solar cell according to claim 1, wherein, in the insulating treatment step, the insulator is irradiated with laser light to be fired, sintered, dried or cured. The thin film solar cell according to claim 1 or 2, wherein in the short-circuiting step, a concave groove that breaks a short-circuit between the conductor and the second electrode film located on the other side edge of the separation groove is formed. Manufacturing method. In the insulation treatment step, an insulator is applied so as to fill substantially the entire separation groove formed in the laser processing step,
In the short-circuiting step, the insulator is cut to form a concave groove, and the first conductive film located on the other side edge of the separation groove is exposed in the concave groove, and the concave groove The manufacturing method of the thin film solar cell of Claim 1 or 2 which short-circuits the said conductor to said 1st electrically conductive film through this. In the insulation treatment step, an insulator is applied so as to fill substantially the entire separation groove formed in the laser processing step,
In the short-circuit processing step, the power generation layer and the second conductive film located on the other side edge of the separation groove are cut to form a concave groove, and the other side of the separation groove is formed in the concave groove. The manufacturing method of the thin film solar cell of Claim 1 or 2 which short-circuits the said conductor to a said 1st electrically conductive film through this recessed groove while exposing the 1st electrically conductive film located in an edge part. It is for implementing the manufacturing method of the thin film solar cell of Claim 1, 2, 3, 4 or
A laser beam irradiation means for a laser processing step for forming a separation groove for dividing the first electrode film, the power generation layer and the second electrode film on the substrate into cell units;
A coating means for an insulation treatment process for coating an insulator covering the first electrode film and the power generation layer at one side edge of the separation groove formed in the laser processing process;
A second electrode film located on one side edge of the separation groove and a first electrode film located on the other side edge of the separation groove are stacked on the insulator applied in the insulation treatment step. Application means for a short-circuiting process for applying an electrical short-circuiting conductor;
A thin-film solar cell manufacturing apparatus comprising: The thin-film solar cell manufacturing apparatus according to claim 6, further comprising laser light irradiation means for irradiating the insulator with a laser beam in the insulating treatment step to perform firing, sintering, drying or curing of the insulator. The laser light irradiation means which forms the ditch | groove which interrupts the short circuit with the said 2nd electrode film located in the side edge part of the other side of the said conductor and the said isolation | separation groove | channel in the said short circuit treatment process is provided. The thin-film solar cell manufacturing apparatus according to 7. Laser light irradiation means for cutting the insulator in the short-circuiting step to form a groove and exposing the first conductive film located on the other side edge of the separation groove in the groove. The thin-film solar cell manufacturing apparatus according to claim 6 or 7. 8. The laser light irradiation means according to claim 6, further comprising a laser beam irradiation unit configured to cut a power generation layer and a second conductive film located on a side edge portion on the other side of the separation groove in the short-circuiting process to form a concave groove. Thin film solar cell manufacturing equipment.

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