JP2012111984A - Apparatus for forming surface coat of resin substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for forming a surface coat of a resin substrate, which forms a coat on surfaces of a plurality of kinds of resin substrates that are different from each other in shapes or sizes thereof by a single apparatus, rapidly and efficiently.SOLUTION: In the apparatus for forming a surface coat of a resin substrate, a vacuum chamber 16 includes: exhausting means 46, 48 for making the inside of the vacuum chamber 16 be in a reduced pressure state; gas introduction means 50, 52 for introducing reactant gas into the vacuum chamber 16; and an induction field producing device 28 for producing an induction field inside the vacuum chamber 16 to generate inductive coupled plasma of the reactant gas introduced into the vacuum chamber 16. The gas introduction means 50, 52 include: an introduction head 54 with a gas introduction opening 56 opened inside the vacuum chamber 16; and an opening position changing mechanism 58 for changing the position of the opening of the gas introduction opening 56 in the vacuum chamber 16.

Description

  The present invention relates to an apparatus for forming a surface coating on a resin substrate, and more particularly to an improvement in an apparatus for forming a surface coating on a resin substrate that uses inductively coupled plasma to form a coating on the surface of a resin substrate. It is.

  Conventionally, resin molded products having both excellent moldability and light weight have been widely used as base materials for interior parts of vehicles such as automobiles, electrical, electronic parts, and building parts, for example. Yes. In addition, among the bases made of such resin molded products, so-called resin bases, those having transparency have been studied for use as substitutes for glass and have been put into practical use in part.

However, the resin base material has a defect that the abrasion resistance is lower than that of glass or the like. Accordingly, resin substrates used for applications requiring abrasion resistance and the like are generally used after a protective coating is formed on the surface. For example, a transparent resin base material used as a substitute for glass is used with a film made of SiO ₂ or SiON formed on the surface thereof.

  As a kind of apparatus for forming such a surface coating on a resin base material, for example, as disclosed in Japanese Patent Application Laid-Open No. 2009-120881 (Patent Document 1), a parallel plate type plasma CVD method is employed. Such a device is known. This apparatus includes a vacuum chamber, a vacuum pump that evacuates the vacuum chamber to a reduced pressure state, a nozzle that introduces a reactive gas into the reduced pressure vacuum chamber, and a predetermined distance from the vacuum chamber. And a pair of flat electrodes arranged in parallel. Then, a resin substrate is disposed on the opposing surface of one of the pair of flat electrodes, a reaction gas is introduced into a vacuum chamber in a reduced pressure state, and a high frequency current is supplied to the pair of flat electrodes, A film of a reactive gas is generated between the electrodes to form a film on the surface of the resin base material. According to this apparatus, a dense and thin film can be efficiently formed on the surface of the resin substrate at a sufficiently high film formation rate.

  However, in such a conventional resin base material surface film forming apparatus, there are cases in which the inside of the vacuum chamber is heated to a temperature of 400 ° C. or higher due to heat generated during plasma generation or film formation. Therefore, if the resin base material is made of a thermoplastic resin, such a resin base material may be thermally deformed or melted. In the device disclosed in the above publication, a mechanism for forcibly cooling the pair of flat electrodes is provided to solve problems such as thermal deformation of the resin base material. However, when taking measures against such thermal deformation of the resin base material, an extra cost is required for the installation of the cooling mechanism, thereby increasing the cost of forming the surface coating on the resin base material. .

  As is well known, in the parallel plate type plasma CVD method, in order to efficiently generate plasma between a pair of plate electrodes, the distance between the electrodes must be sufficiently small. (Generally 30 mm or less). Therefore, in a conventional apparatus that employs such a parallel plate type plasma CVD method, a block-shaped resin base material or a plate shape is exhibited, but a thick resin base material or a three-dimensional shape is exhibited. It was extremely difficult to form a surface coating on a resin base material or the like. Therefore, when using such a conventional apparatus, the applied resin base material is limited to a thin flat plate shape.

  In addition, as a plasma CVD apparatus for forming a film on the surface of a substrate, in addition to the one using the parallel plate type plasma CVD method as described above, for example, JP-A-2005-248327 (Patent Document 2), etc. An apparatus adopting an inductively coupled plasma CVD method as disclosed in US Pat. This device is disposed outside the vacuum chamber, a vacuum pump that evacuates the vacuum chamber and depressurizes the vacuum chamber, introduces a reaction gas into the vacuum chamber in a depressurized state, And an antenna made of an induction coil or the like for forming an induction electromagnetic field in the vacuum chamber. Then, using the reactive gas inductively coupled plasma generated by introducing the reactive gas into the vacuum chamber in which the induction electromagnetic field is formed by the antenna, a coating is applied to the surface of the substrate housed in the vacuum chamber. It is configured to form.

  In such an inductively coupled plasma CVD apparatus, the amount of heat generated at the time of film formation is small, so that a film can be formed on the surface of the substrate while the inside of the vacuum chamber is maintained at a relatively low temperature. In addition to the fact that an antenna for generating an induction electromagnetic field in the vacuum chamber is installed outside the vacuum chamber, there is no restriction on the distance between the substrate housed in the vacuum chamber and the antenna. Therefore, in the case of using such an inductively coupled plasma CVD apparatus, unlike the case of using a parallel plate type plasma CVD apparatus, the surface of a substrate exhibiting a block shape or a thick plate shape, or a tertiary A film can be easily formed on the surface of the base material having the original shape. Therefore, if such an inductively coupled plasma CVD apparatus is used as a surface coating film forming device for a resin substrate, it is possible to form a surface coating on a resin substrate having various shapes other than a thin flat resin substrate. It is considered that it can be realized at low cost without causing quality deterioration due to the heat effect of the resin base material.

  However, according to the inventor's research, when a coating is formed on the surface of a resin base material having various shapes and sizes using one inductively coupled plasma CVD apparatus, the shape and size of the resin base material are used. It has been clarified that there is a large difference in the film formation speed (film formation speed) on the surface of the resin substrate due to the difference in the above. For this reason, in order to quickly form a surface coating on a resin substrate using a conventional inductively coupled plasma CVD apparatus as a resin substrate surface coating formation device, the shape and size of the resin substrate can be changed. Thus, it has been found that it is necessary to prepare a plurality of types of devices.

JP 2009-120881 A JP 2005-248327 A

  Here, the present invention has been made in the background as described above, and the problem to be solved is that the resin base material does not cause deterioration of the quality of the resin base material due to thermal effects. It is an object of the present invention to provide an apparatus for forming a surface coating film on a resin base material, which can form a coating film on the surface of the resin base material quickly and efficiently with a single device.

  Then, in order to solve such a problem, the present inventor first used a single inductively coupled plasma CVD apparatus having a conventional structure to form a resin substrate on the surface of a plurality of types of resin base materials. Research was repeated to determine the cause of the large difference in film deposition rate due to differences in material shape and size. As a result, the following conclusions were obtained.

  That is, in the conventional inductively coupled plasma CVD apparatus, as shown in FIG. 1 and the like of the above-mentioned publication (Patent Document 2), a base material in which a nozzle for introducing a reactive gas into the vacuum chamber is accommodated in the vacuum chamber. And is fixed at a position separated from each other. Therefore, when a plurality of types of resin substrates having different shapes and sizes are accommodated in the vacuum chamber, the distance between the surface of the resin substrate and the position of the nozzle opening in the vacuum chamber is accommodated. Each type of resin substrate has a different size.

  When the distance between the surface of the resin base material and the opening position of the nozzle is small, most of the compounds that are introduced from the nozzle into the vacuum chamber and are generated by the combination of a plurality of types of reaction gases that have been converted into plasma Reach and deposit quickly and reliably on the surface of the substrate to form a coating. On the other hand, when the distance between the surface of the resin base material and the nozzle opening position is large, not a small amount of the compound generated by the combination of plural kinds of plasma reaction gases reaches the surface of the resin base material. Before being discharged from the exhaust system of the vacuum chamber, the adhesion efficiency of the compound to the surface of the resin substrate decreases.

  Therefore, when a coating is formed on the surface of a resin substrate using a conventional inductively coupled plasma CVD apparatus, the difference in the film formation speed due to the difference in the shape and size of the resin substrate occurs in the vacuum chamber. Since the position of the nozzle opening in the nozzle is fixed, the distance between the surface of the resin substrate and the position of the nozzle opening in the vacuum chamber is different between resin substrates of different shapes and sizes. I got the conclusion that it was because of the difference.

  And this invention was completed as a result of repeating earnest research based on the above conclusion, and the gist of the present invention is a vacuum chamber capable of accommodating a substrate made of a resin molded product, By evacuating the vacuum chamber to bring it into a decompressed state, gas introducing means for introducing a reaction gas into the decompressed vacuum chamber, and supply of a high-frequency current, an induced electromagnetic field is introduced into the vacuum chamber. Using the inductively coupled plasma of the reaction gas generated by introduction of the reaction gas into the vacuum chamber in which the induction electromagnetic field is formed. A resin base material surface film forming apparatus configured to form a film on the surface of the accommodated resin base material, wherein the gas introduction means includes a gas introduction port that opens into the vacuum chamber. And head, lying on the surface film forming apparatus of the resin base material, characterized in that and an opening position changing mechanism for changing the opening position in the vacuum chamber of the gas inlet of the inlet head.

  According to one of the preferred embodiments of the present invention, the introduction head is constituted by a tubular body extending into the vacuum chamber and having a distal end opening serving as the gas introduction port. A bellows part is formed in the middle part in the length direction of the bellows, which enables expansion and contraction or bending deformation of the pipe body and can maintain the deformation state of the pipe body, and the opening position changing mechanism is formed in the bellows part. Will be composed.

  According to another advantageous aspect of the present invention, there is provided a moving mechanism for changing the opening position of the gas introduction port in the vacuum chamber by moving the introduction head in the vacuum chamber. The opening position changing mechanism is configured including such a moving mechanism.

  Furthermore, according to one of the desirable aspects of the present invention, a plurality of the gas introduction ports are provided to the introduction head so as to be arranged at different positions in the vacuum chamber, while the plurality of gas introduction ports are provided. An opening / closing mechanism for selectively opening and closing the introduction port is provided in the introduction head, and by selectively opening one of the plurality of gas introduction ports with the opening / closing mechanism, the vacuum of the gas introduction port is provided. The opening position in the chamber is changed, and the opening / closing mechanism is configured including the opening position changing mechanism.

  Moreover, according to one of the suitable aspects of this invention, the heating means which heats the said resin base material accommodated in the said vacuum chamber of a pressure reduction state will be further provided.

  Furthermore, according to one of the advantageous aspects of the present invention, the heating means is constituted by a non-contact type heating means for heating the resin base material in a non-contact manner.

  Furthermore, according to another preferred embodiment of the present invention, the non-contact type heating means is constituted by an infrared heating device that heats the resin substrate by irradiating the resin substrate with infrared rays. The

  According to another desirable aspect of the present invention, there is further provided charging means for charging the surface of the resin base material housed in the vacuum chamber in a reduced pressure state.

  In short, in the resin base material surface film forming apparatus according to the present invention, a film is formed on the surface of the resin base material using inductively coupled plasma. Therefore, productivity of the coating can be improved by increasing the adhesion efficiency of the coating to the surface of the resin substrate without causing a deterioration in quality due to the heat effect of the resin substrate.

  And in this invention apparatus, the opening position in the vacuum chamber of the gas introduction port of the gas introduction head which introduce | transduces reaction gas in a vacuum chamber especially is made variable by the opening position change mechanism. For this reason, even when only one of the devices of the present invention is used to form a coating on the surface of a plurality of types of resin substrates having different shapes and sizes, the resin substrate accommodated in the vacuum chamber If the opening position of the gas introduction port in the vacuum chamber is appropriately changed according to the shape and size of the gas, the opening position of the gas introduction port that occurs with the replacement of the resin substrate accommodated in the vacuum chamber The amount of fluctuation in the distance between the resin and the surface of the resin substrate can be made as small as possible.

  Therefore, the apparatus of the present invention can effectively reduce the fluctuation amount of the film forming speed due to the difference in the shape and size of the resin base material accommodated in the vacuum chamber. It is possible to form a film on the surfaces of a plurality of types of resin bases having different thicknesses at a constant film formation rate as much as possible.

  Therefore, according to the resin base material surface film forming apparatus according to the present invention as described above, the formation of the film on the surface of the resin base material does not cause deterioration of the quality of the resin base material due to thermal effects, and the resin base material. Regardless of the shape, size, etc. of the material, it can be carried out quickly and efficiently while using one apparatus for general purposes.

It is the partial cross-section enlarged explanatory view which shows the resin glass by which the surface film forming apparatus of the resin base material according to this invention was used, and the film was formed in the surface of the resin base material. It is longitudinal cross-sectional explanatory drawing which shows one Embodiment of the surface film formation apparatus of the resin base material according to this invention, Comprising: The state which accommodated the resin base material in the vacuum chamber is shown. FIG. 3 is a view corresponding to the partially enlarged explanatory view of FIG. 2, showing a state in which a resin base material different from the resin base material shown in FIG. 1 is accommodated in the surface film forming apparatus shown in FIG. 2. . It is a figure corresponding to FIG. 2 which shows another embodiment of the surface film formation apparatus of the resin base material according to this invention. It is a figure corresponding to FIG. 2 which shows another embodiment of the surface film formation apparatus of the resin base material according to this invention. It is a figure corresponding to FIG. 2 which shows other embodiment of the surface film formation apparatus of the resin base material according to this invention.

  Hereinafter, in order to clarify the present invention more specifically, embodiments of the present invention will be described in detail with reference to the drawings.

First, in FIG. 1, a resin glass 10 for a rear window of an automobile, in which a coating is formed on the surface by a resin substrate surface coating forming apparatus having a structure according to the present invention, is shown in a partial sectional form. ing. As is clear from FIG. 1, the resin glass 10 has a resin base 12 made of a transparent plate. Here, the resin substrate 12 is made of a resin molded product that is injection-molded using polycarbonate. Moreover, the resin base material 12 is exhibiting the three-dimensional shape which curves so that the whole may become convex toward the thickness direction one side. A thin and transparent film 14 made of SiO ₂ is formed as a protective film on the entire surface of the resin substrate 12. Thus, in the resin glass 10, the abrasion resistance on the entire surface is improved while sufficiently maintaining transparency.

  By the way, the surface film forming apparatus used when the film 14 is formed on the surface of the resin substrate 12 to obtain the resin glass 10 as described above has a structure as shown in FIG. 2, for example. The structure of this surface film forming apparatus will be described below.

  As is clear from FIG. 2, the surface film forming apparatus has a vacuum chamber 16. The vacuum chamber 16 further includes a chamber body 18 and a lid 20. The chamber body 18 has a bottomed cylindrical shape or a casing shape including a cylindrical side wall portion 22 and a lower bottom wall portion 24 that closes a lower opening of the side wall portion 22. The lid 20 is made of, for example, a dielectric material such as ceramics, and is configured by a flat plate having a size capable of covering the entire upper opening 26 of the chamber body 18. The lid body 20 covers the upper opening 26 of the chamber body 18 and is locked by a lock mechanism (not shown) so that the chamber body 18 is hermetically sealed.

  On the lid 20 of such a vacuum chamber 16, an induction coil 28 is installed. The induction coil 28 is configured by a planar coil in which, for example, a copper wire is wound in a spiral shape. One end of the power supply line 30 is connected to the end of the spiral of the induction coil 28, and the other end of the power supply line 30 is connected to the high frequency power supply 32. On the other hand, the outer peripheral side end of the spiral of the induction coil 28 is grounded.

  Thus, a high-frequency current is supplied from the high-frequency power supply 32 to the induction coil 28, and the induction electromagnetic field is generated in the chamber body 18 of the vacuum chamber 16 by the supply of the high-frequency current to the induction coil 28. Is to be formed. The gas in the vacuum chamber 16 is turned into plasma by the induction electromagnetic field formed in the chamber body 18. As is clear from this, in this embodiment, the induction coil 28 constitutes an induction electromagnetic field forming means.

  Further, a support jig 34 made of an insulator is accommodated in the chamber body 18 in a state of being placed on the lower side wall portion 24 of the chamber body 18. The support jig 34 has a plurality of rod-like support portions 38 that extend in the vertical direction and whose upper end surface is a support surface 36. In addition, the support surface 36 of each of the rod-shaped support portions 38 has a shape corresponding to one surface formed of the concave curved surface of the resin base material 12.

  Thus, the support jig 34 supports the resin base material 12 by the rod-shaped support portions 38 in a state where the support surface 36 of each rod-shaped support portion 38 is in contact with a plurality of locations on one plate surface of the resin base material 12. It is supposed to be. The support jig 34 that supports the resin base material 12 in this manner is accommodated in the chamber main body 180 together with the resin base material 12, so that the resin base material 12 is contained in the chamber main body 18 and the chamber main body 14. It is accommodated in a state in which it is electrically insulated from the lower bottom wall portion 24.

  In addition, here, the overall shapes are different from each other due to the difference in the curvature of both side plate surfaces made of curved surfaces, or the overall sizes are different from each other. In order to support the plurality of types of resin base materials 12 respectively, the support jig 34 has a plurality of types of curved support surfaces 36 corresponding to the plate surfaces of the plurality of types of resin base materials 12, respectively. Is being prepared. Accordingly, when the plurality of types of resin base materials 12 are accommodated in the chamber body 18, the support surface 36 corresponding to the type of the resin base material 12 to be supported is selected from the plurality of types of support jigs 34. By selecting and using, it is possible to accommodate each of the plurality of types of resin base materials 12 in the chamber body 18 while stably supporting the resin base materials 12 with the support jig 34.

  In addition, as the support jig 34, the support surface 36 of the rod-shaped support part 38 is in contact with the resin base material 12 by point contact regardless of the shape of the resin base material 12, for example, an arc surface shape is used. May be. When such a support jig 34 is used, it is not necessary to prepare a plurality of types of support jigs 34 in order to support a plurality of types of resin base materials 12 having different shapes, sizes, etc. A plurality of types of resin base materials 12 can be supported by using the support jig 34 for general purposes. Further, the support jig 34 may be fixed in the chamber body 18. In that case, when the coating 14 is formed on the surface of the plurality of types of resin base materials 12, only the resin base material 12 accommodated in the chamber body 18 is replaced without replacing the support jig 34 at all. It becomes.

  Further, far-infrared heaters 40 as non-contact type heating means are respectively provided at a plurality of locations on the lower bottom wall portion 24 of the chamber body 18 and a plurality of locations on the periphery of the lower portion of the side wall portion 22. ing. Each of these far-infrared heaters 40 has a known structure capable of irradiating far-infrared rays, and is disposed so as to irradiate far-infrared rays into the chamber body 12. Thus, far infrared rays are irradiated on the resin base material 12 accommodated in the chamber main body 18 by a plurality of far infrared heaters 40 from a plurality of directions below and on the side. Thereby, the resin base material 12 in the chamber body 18 is heated by the plurality of far infrared heaters 40 in a non-contact state with the plurality of far infrared heaters 40.

  Further, a bias power source 42 for supplying a negative bias voltage is disposed outside the chamber body 18. In addition, a power supply line 44 is connected to the bias power source 42, and the power supply line 44 extends through the lower bottom wall portion 24 into the chamber body 18. An extension end of the power supply line 44 into the chamber main body 18 can be connected to the resin base material 12 accommodated in the chamber main body 18. By connecting the power supply line 44 to the resin base material 12, a negative bias voltage is applied to the resin base material 12 in the chamber body 18. Thus, the resin base material 12 in the chamber body 18 is negatively charged by the ON operation of the bias power source 42. As is clear from this, in this embodiment, the bias power source 42 and the power supply line 44 constitute a charging unit.

  An exhaust pipe 46 is provided at one location on the lower end of the side wall 22 of the chamber body 18 so as to penetrate the side wall 22 so as to communicate with the inside and outside of the chamber main body 18. A vacuum pump 48 is provided on the exhaust pipe 46. By the operation of the vacuum pump 48, the gas in the chamber body 18 is discharged to the outside through the exhaust pipe 46, and the chamber body 18 is decompressed. As is clear from this, in this embodiment, the exhaust pipe 46 and the vacuum pump 48 constitute exhaust means.

In addition, a plurality of first gas introduction pipes 50 communicating with the inside and the outside of the chamber body 18 are installed at a plurality of locations (here, two locations) on the upper end side portion of the side wall portion 22. . Each of the plurality of first gas introduction pipes 50 penetrates the side wall portion 22, and one end side portion of each of the first gas introduction pipes 50 enters the chamber main body 18. On the other hand, a cylinder (not shown) containing monosilane (SiH ₄ ) gas is connected to the other end of each first gas introduction pipe 50 extending out of the chamber body 18. Thereby, monosilane gas as a kind of reaction gas (raw material gas) for forming the coating film 14 made of SiO ₂ is introduced into the chamber body 18 through the plurality of first gas introduction pipes 50.

Furthermore, a second gas introduction pipe 52 is provided at a plurality of locations (here, two locations) on the circumference different from the installation location of the first gas introduction pipe 50 at the upper end side portion of the side wall portion 22. Each of them is installed in the same state as the gas introduction pipe 50. A cylinder (not shown) containing oxygen (O ₂ ) gas is connected to the ends of the plurality of second gas introduction pipes 52 extending to the outside of the chamber body 18. As a result, oxygen gas as another kind of reaction gas (raw material gas) for forming the coating film 14 made of SiO ₂ is introduced into the chamber body 18 through the plurality of second gas introduction pipes 52. ing. As is clear from these facts, here, the first gas introduction pipe 50 and the second gas introduction pipe 52 constitute a gas introduction means.

  In the present embodiment, in particular, the first gas introduction pipe 50 and the second gas introduction pipe 52 for separately introducing two kinds of reaction gases into the chamber body 18 have the same structure. In addition, it has a special structure that is completely different from the reactant gas introduction member provided in the conventional apparatus.

  That is, here, the first gas introduction pipe 50 and the second gas introduction pipe 52 are, for example, a metal material rich in lightness such as aluminum, a resin material having a high deformation strength against heat such as a thermosetting resin, or the like. It is formed using. The one end portions of the first and second gas introduction pipes 50 and 52 that have entered the chamber main body 18 serve as introduction heads 54, respectively. Further, each of the introduction heads 54 has a gas inlet 56 that opens in the chamber body 18 at the tip opening, and monosilane gas or oxygen gas that circulates in the first or second gas introduction pipes 50 and 52. From the gas inlet 56 into the chamber body 18.

  In each of the introduction heads 54, most of the introduction head 54 excluding the tip on the gas introduction port 56 side is a bellows portion 58. The bellows portion 58 can be expanded and contracted in the direction of the central axis of the introduction head 54 made of a pipe member, and can be freely bent at an arbitrary angle in all directions intersecting the central axis. Yes. Once deformed by being stretched, contracted, or bent, such a deformed state is maintained unless an external force is applied.

  Thus, in the first and second gas introduction pipes 50 and 52, the position of each gas introduction port 56 in the chamber body 18, in other words, the chamber body can be obtained by expanding and contracting or bending the bellows portion 58. The opening position of the introduction head 54 in 18 can be changed to an arbitrary position. As is clear from this, in the present embodiment, the bellows portion 58 constitutes an opening position changing mechanism.

  By the way, when the coating film 14 is formed on the surface of the resin base material 12 using the surface coating film forming apparatus having such a structure, for example, the operation is advanced as follows.

  That is, first, the resin base material 12 is accommodated in the chamber main body 18 through the upper opening 26 together with the support jig 34 while being supported by the support jig 34. Thereafter, an extension end of the power supply line 44 extending from the bias power source 42 through the lower bottom wall portion 24 of the chamber body 18 and extending into the chamber body 18 is formed on the resin base material 12 accommodated in the chamber body 18. Connecting.

  Next, the bellows portions 58 of the introduction heads 54 of the first gas introduction pipe 50 and the second gas introduction pipe 52 are respectively extended and bent downward from the state shown by the two-dot chain line in FIG. Let Then, the gas introduction ports 56 of the first and second introduction pipes 50 and 52 are brought close to the surface of the resin base material 12. As a result, the monosilane gas and the oxygen gas introduced into the chamber body 18 through the first and second introduction pipes 50 and 52 are released toward the surface near the surface of the resin base material 12.

Thereafter, the upper opening 26 is covered with the lid 20, and then the lid 20 is locked to the chamber body 18 by a lock mechanism (not shown). Thereby, the inside of the vacuum chamber 16 is hermetically sealed. Thereafter, the vacuum pump 48 is operated to reduce the pressure in the vacuum chamber 16. By this depressurization operation, the pressure in the vacuum chamber 16 is set to, for example, about 10 ^{−5 to} 50 Pa.

  Further, while reducing the pressure in the vacuum chamber 16, the far-infrared heater 40 provided in the chamber body 18 is turned on. As a result, the resin base material 12 is heated by far infrared rays emitted from the far infrared heater 40 in the vacuum chamber 169 in a reduced pressure or vacuum state.

  Note that the heating temperature of the resin base 12 at this time is appropriately determined depending on the type of resin material constituting the resin base 12, the type of reaction gas introduced into the vacuum chamber 16, and the like. Specifically, the reaction gas that has been converted into plasma at a temperature lower than the temperature at which the resin base material 12 is thermally deformed (for example, a temperature lower than the glass transition temperature) and is formed by the process described later is the resin base material 12. The heating temperature of the resin substrate 12 is set at a temperature suitable for reacting on the surface. Therefore, in this embodiment, the temperature is lower than the heat deformation temperature of the polycarbonate, which is the material for forming the resin base material 12, and can promote the reaction between the plasma monosilane gas and the oxygen gas, for example, about 40 to 150 ° C. The resin base material 12 is heated up to the temperature. In addition, the control of the heating temperature of the resin base material 12 may be performed by appropriately changing the number or position of the far-infrared heaters 40 that are turned ON among the plurality of far-infrared heaters 40, This is done by adjusting the amount of far-infrared radiation.

  Further, while the resin base 12 is heated by the far infrared heater 40, the bias power source 42 is turned on. As a result, a negative bias voltage is applied to the resin base material 12 connected to the power supply line 44 extending from the bias power source 42 to negatively charge the surface of the resin base material 12. The timing of starting heating and charging of the resin base material 12 is not limited to the above timing, and may be any time as long as the resin base material 12 is accommodated in the chamber body 18.

  When the pressure in the vacuum chamber 16 reaches a predetermined value, the monosilane gas cylinder and the oxygen cylinder connected to the first introduction pipe 50 and the second introduction pipe 52, respectively, while the vacuum pump 48 is operated. Open. Thereby, the monosilane gas and the oxygen gas are introduced into the vacuum chamber 16 through the first introduction pipe 50 and the second introduction pipe 52 to be filled.

  Next, the high frequency power supply 32 connected to the induction coil 28 on the lid 14 via the power supply line 30 is turned on to supply the high frequency current of the induction coil 28. Thereby, an induction electromagnetic field is formed in the vacuum chamber 16. The monosilane gas and the oxygen gas in the vacuum chamber 16 are turned into plasma by the induction electromagnetic field formed in the vacuum chamber 16, and the monosilane gas inductively coupled plasma and the oxygen gas inductively coupled plasma are converted into the vacuum chamber 16. Generated in a relatively low temperature state.

Then, the reaction between the inductively coupled plasma of monosilane gas and the inductively coupled plasma of oxygen gas is generated in the space in the vacuum chamber 16 or on the surface of the substrate 12 to generate SiO _2, and this is generated on the substrate 12. Deposit on the entire surface. At this time, the amount of heat generated by the collision of SiO _{2 with} the base material 12 is suppressed to a sufficiently low amount. As a result, a thin coating 14 made of SiO _{2 is} formed on the entire surface of the substrate 12 at a relatively low temperature.

  Here, in the above-described series of steps of forming the coating film 14, the bellows portions 58 are stretched so that the gas introduction ports 56 of the first and second gas introduction pipes 50 and 52 approach the surface of the resin base material 12. By being bent, the monosilane gas and the oxygen gas are released toward the surface near the surface of the resin substrate 12. Therefore, inductively coupled plasma of monosilane gas and inductively coupled plasma of oxygen gas are generated near the surface of the resin base material 12 or on the surface of the resin base material 12, and the inductively coupled plasma of monosilane gas is generated at those locations. It reacts with the inductively coupled plasma of oxygen gas.

Therefore, when the monosilane gas and the oxygen gas are introduced into the vacuum chamber 16 at a location apart from the resin base material 12, the inductively coupled plasma of the monosilane gas and the inductively coupled plasma of the oxygen gas are generated and reacted. Unlike SiO ₂ , SiO ₂ generated by the reaction between the inductively coupled plasma of monosilane gas and the inductively coupled plasma of oxygen gas reaches the surface of the resin substrate 12 at a short distance in a short time. It will be deposited. Moreover, since the SiO ₂ generated in the vacuum chamber 16 reaches the surface of the resin base material 12 at a short distance in a short time, the SiO ₂ reaches the surface of the resin base material 12. Before the exhaust pipe 46 is exhausted, the exhaust pipe 46 can be effectively suppressed. As a result, the adhesion efficiency of the coating 14 made of SiO ₂ to the surface of the resin base 12 is sufficiently enhanced.

The distance L ₁ between the gas inlet 56 of the first gas inlet pipe 50 and the surface of the resin base 12, and the surface of the gas inlet 56 of the second gas inlet pipe 52 and the surface of the resin base 12 The size of the distance L between: and L ₂ is not particularly limited, and is appropriately set according to the size and shape of the resin substrate 12. The specific values of the distances L ₁ and L ₂ are appropriately determined based on, for example, the results and experiences of tests performed under various conditions.

  Further, when the coating 14 is formed on the surface of the resin base material 12 by the above-described series of steps, the resin base material 12 is lower than the heat deformation temperature of the polycarbonate as the forming material, and is converted into plasma monosilane gas and oxygen gas. To a temperature at which the reaction with is promoted. Therefore, on the surface of the resin substrate 12, the plasma-ized monosilane gas and oxygen gas react more efficiently. As a result, the adhesion efficiency of the coating 14 on the surface of the resin substrate 12 is further effectively increased.

  Furthermore, the resin substrate 12 is negatively charged simultaneously with being heated. For this reason, the inductively coupled plasma of the monosilane gas is electrically attracted to the surface of the resin base material 12, and the atmosphere around the surface of the resin base material 12 is made rich in the inductively coupled plasma of the monosilane gas. Thereby, the reaction between the inductively coupled plasma of the monosilane gas and the inductively coupled plasma of the oxygen gas is further effectively promoted on the surface of the resin substrate 12 or in the vicinity thereof. Also by this, the adhesion efficiency of the coating 14 on the surface of the resin base material 12 is more advantageously enhanced.

  The magnitude of the negative bias voltage applied to the resin base material 12 is not particularly limited, but is preferably about −50 to −6000V. This is because when the applied voltage is lower than −50 V, the charge amount is small, and thus the above-described effect obtained by negatively charging the resin substrate 12 may not be sufficiently obtained. is there. Further, even if the applied voltage exceeds −6000 V, the above effect cannot be further enhanced, and the voltage is too high. On the contrary, the cost burden and the risk of work increase.

  Then, using the film forming apparatus of the present embodiment having the structure as described above, for example, two types of resin base materials 12 and 13 having different sizes as shown by a two-dot chain line and a solid line in FIG. When the coating 14 is formed on the surfaces of the resin substrates 12 and 13 separately and sequentially in the vacuum chamber 16, the resin substrates 12 and 13 are accommodated in the vacuum chamber 16, respectively. Sometimes, the operation of changing the positions of the gas introduction ports 56 of the first and second gas introduction pipes 50 and 52 is performed according to the size of the accommodated resin base materials 12 and 13.

That is, for example, when the coating film 14 is formed on the surface of the small resin base material 13 after the coating film 14 is formed on the surface of the large resin base material 12, each of the first and second gas introduction pipes 50 and 52 is formed. The bellows portion 58 of the introduction head 54 is further expanded from the deformed state shown by the two-dot chain line in FIG. 3 when the coating 14 is formed on the surface of the large resin base material 12, as shown by the solid line in FIG. And increase the downward bending angle. As a result, the distance L ₁ between the gas inlet 56 of the first gas inlet pipe 50 and the surface of the resin base 12 when the coating 14 is formed on the surface of the large resin base 12, and the small resin base The distance M ₁ between the gas inlet 56 of the first gas inlet pipe 50 and the surface of the resin base material 13 when forming the coating 14 on the surface of the material 13 is made as large as possible. The distance between the large resin base material 12 second during formation of the coating 14 to the surface of the gas inlet gas inlet 56 and the resin base material 12 of the surface of the pipe 52: a L _2, small resin base The distance M ₂ between the gas inlet 56 of the second gas inlet pipe 50 and the surface of the resin base material 13 when the coating 14 is formed on the surface 13 is made as large as possible.

  On the other hand, when the coating film 14 is formed on the surface of the large resin substrate 12 after the coating film 14 is formed on the surface of the small resin substrate 13, the operation opposite to the above is performed.

  Thus, when the coating 14 is formed on the surfaces of the two types of resin base materials 12 and 13 having different sizes, the first and second gas introduction pipes due to the difference in size of the resin base materials 12 and 13 are used. Variations in the distance between the gas inlets 56 and 52 and the surface of the resin base 12 are made sufficiently small. And thereby, the coating film 14 to the surface of the resin base material 12 due to the variation in the distance between the gas inlets 56 of the first and second gas introduction pipes 50 and 52 and the surface of the resin base material 12. The fluctuation of the adhesion efficiency is eliminated or sufficiently suppressed.

  Although not shown in the drawings, when a plurality of types of resin base materials 12 having different shapes are sequentially stored in the vacuum chamber 16 and the coating film 14 is formed on the surface of each of the resin base materials 12, they are also stored. The deformation state of each bellows part 58 of the first and second gas introduction pipes 50 and 52 is changed according to the difference in the shape of the resin base material 12 to be performed. Thus, the variation in the distance between each gas inlet 56 of the first and second gas introduction pipes 50 and 52 and the surface of the resin substrate 12 due to the difference in the shape of the resin substrates 12 and 13 is sufficiently obtained. Make it smaller. In addition, thereby, the coating 14 is applied to the surface of the resin base material 12 due to the variation in the distance between the gas inlets 56 of the first and second gas introduction pipes 50 and 52 and the surface of the resin base material 12. The fluctuation of the adhesion efficiency is eliminated or sufficiently suppressed.

Thus, if the film forming apparatus of this embodiment is used, the inside of the vacuum chamber 16 maintained at a relatively low temperature without providing any special equipment or mechanism for lowering the temperature in the vacuum chamber 16. Thus, SiO ₂ can be generated by reacting inductively coupled plasma of monosilane gas and inductively coupled plasma of oxygen gas. Therefore, the coating film 14 can be uniformly formed at high speed on the surface of the resin base material 12 without causing quality degradation due to thermal deformation or the like of the resin base material 12.

  In addition, according to such a film forming apparatus, since the shape, size, and the like are different from each other, a plurality of types of resin base materials 12 and 13 in which the positions of the surfaces in the vacuum chamber 16 are different from each other are evacuated. The introduction heads 54 of the first and second gas introduction pipes 50 and 52 are separately and sequentially accommodated in the chamber 16 and the coating 14 is formed on the surfaces of the resin base materials 12 and 13. The bellows portion 58 is expanded and contracted, or bent at various angles, so that the inside of the vacuum chamber 16 of the gas introduction port 56 of each introduction head 54 regardless of the shape and size of the resin base materials 12 and 13. Can be changed to an appropriate position close to the surface of the resin substrate 12. As a result, the deposition rate is shortened, and fluctuations in the adhesion efficiency of the coating 14 to the surface of the resin substrate 12 due to the difference in the shape and size of the resin substrates 12 and 13 are eliminated. Or it becomes possible to suppress sufficiently.

  Therefore, in such a coating film forming apparatus of this embodiment, the coating film 14 on the surface of the resin base material 12 regardless of the difference in the shape or size of the resin base material 12 accommodated in the vacuum chamber 16. The rate of formation of can be made sufficiently fast and as constant as possible. Therefore, according to such a film forming apparatus, the film 14 is extremely applied to the surfaces of a plurality of types of resin base materials 12 having different shapes and sizes while using one apparatus for general purposes. It can be formed efficiently and at low cost.

  Next, FIG. 4 shows another embodiment of a resin-based film-forming apparatus having a structure according to the present invention. This embodiment is different from the first embodiment described above in the structure of the gas introduction means, and the other structures are generally the same as those in the first embodiment. Therefore, in the following, the structure of the gas introduction means will be described in detail, and with regard to other structures, the same reference numerals as those in FIG. The same applies to other embodiments shown in FIGS. 5 and 6 to be described later.

  That is, as is apparent from FIG. 4, in the coating film forming apparatus of this embodiment, the chamber body 18 has a side wall portion 60 and an upper bottom wall portion 62 and opens downward through the lower opening 64. Or it has a casing shape. The lower opening 64 of the chamber body 18 is covered with a lid body 20 having an induction coil 28 fixed on the lower surface thereof, whereby the vacuum chamber 16 is formed.

  In the upper bottom wall portion 62 of the chamber body 18, a first gas introduction pipe 50 that introduces monosilane gas from the outside and a second gas introduction pipe 52 that introduces oxygen gas from the outside are provided inside and outside the chamber body 18. Is installed through the upper bottom wall 62 so as to communicate with each other. The first and second gas introduction pipes 50 and 52 are movable above the resin base material 12 accommodated in the vacuum chamber 16 at the end on the entry side into the vacuum chamber (chamber body 18). Are connected to an introduction head 66 arranged at the same position.

  The introduction head 66 has a monosilane gas flow passage (not shown) through which the monosilane gas guided by the first gas introduction pipe 50 circulates and an oxygen gas through which the oxygen gas guided by the second gas introduction pipe 52 circulates. A flow passage (not shown) is constituted by a housing formed inside. A plurality of first nozzles 68 and a plurality of second nozzles 70 are provided on the lower surface of the introduction head 66. Each of the first and second nozzles 68 and 70 has a gas introduction port 56 that opens toward the resin base material 12 positioned below the introduction head 66. The first nozzle 68 is connected to the monosilane gas flow passage in the introduction head 66, while the second nozzle 70 is connected to the oxygen gas flow passage in the introduction head 66.

  As a result, the monosilane gas introduced by the first gas introduction pipe 50 is introduced into the vacuum chamber 16 through the gas introduction port 56 of the first nozzle 68 of the introduction head 66, while the second The oxygen gas introduced by the gas introduction pipe 52 is introduced into the vacuum chamber 16 through the gas introduction port 56 of the second nozzle 70 of the introduction head 66.

  An introduction head 66 moving unit 72 as a moving mechanism is installed at the center of the upper bottom wall 62 of the chamber body 18. The lower surface of the introduction head moving unit 72 is disposed so as to be exposed in the chamber body 18 (vacuum chamber 16), and the moving rod 74 projects downward from the lower surface into the chamber body 18. ing. Further, inside the introduction head moving unit 72, for example, a known three-dimensional table for positioning in the XYZ axial directions has a gear mechanism having a structure similar to that of a combination of a pinion and a rack, etc. A drive motor that rotationally drives each gear constituting the gear mechanism is provided (none of which is shown). The drive motor built in the introduction head moving unit 72 is electrically connected to a controller 76 fixed on the upper bottom wall 62 of the chamber body 18. The moving rod 74 is connected to the gear mechanism built in the introducing head moving unit 72 at the upper end portion on the introducing head moving head 72 side, and at the lower end portion that enters the chamber main body 18, the chamber An introduction head 66 located in the main body 18 is connected.

  Thus, in the present embodiment, the movement rod 74 and the introduction head 66 connected thereto are driven in the chamber main body 18 by the drive of the electric motor built in the introduction head moving unit 72, the operation of which is controlled by the controller 76. While drawing a trajectory similar to the movement trajectory of the three-dimensional table, as shown by a two-dot chain line in FIG. As the introduction head 66 moves, the gas introduction ports 56 of the first and second nozzles 68 and 70 freely move in the chamber body 18 (vacuum chamber 16), thereby The opening position of each gas introduction port 56 in the chamber body 18 can be changed to an arbitrary position. As is apparent from this, in this embodiment, the first and second gas introduction pipes 50 and 52, the introduction head 66, and the first and second nozzles 68 and 70 constitute gas introduction means. The introduction head 66, the first and second nozzles 68 and 70, and the introduction head moving unit 72 constitute an opening position changing mechanism.

  Then, when the coating film 14 is formed on the surface of the resin substrate 12 using the coating film forming apparatus of this embodiment having such a structure, first, the resin substrate 12 is accommodated in the vacuum chamber 16. Thereafter, the vacuum chamber 16 is depressurized by the vacuum pump 48. At this time, as in the case of using the film forming apparatus according to the first embodiment, the resin base material 12 is heated by the plurality of far infrared heaters 40, while the resin base material 12 is supplied by the bias power source 42. Negatively charged.

  Then, the introduction head 66 is moved by the introduction head moving unit 72 under the operation control of the controller 76 so that the opening positions of the gas introduction ports 56 of the first and second nozzles 68 and 70 are changed to the resin base material. 12 is positioned at an appropriate position close to the surface.

Thereafter, as in the case of using the film forming apparatus according to the first embodiment, monosilane gas and oxygen gas are introduced into the vacuum chamber 16 from the gas introduction ports 56 of the first and second nozzles 68 and 70. On the other hand, a high frequency current is supplied to the induction coil 28. As a result, an induction electromagnetic field is formed in the vacuum chamber 16, and the monosilane gas and oxygen gas introduced into the vacuum chamber 16 are turned into plasma to generate monosilane gas inductively coupled plasma and oxygen gas inductively coupled plasma. Then, these inductively coupled plasmas are reacted with each other to generate SiO ₂ , which is deposited on the surface of the resin substrate 12. Thus, the coating film 14 made of SiO ₂ is formed on the surface of the resin substrate 12.

  When the coating film 14 is formed on the surfaces of a plurality of types of resin base materials 12 having different shapes, sizes, etc. using the coating film forming apparatus of this embodiment, the resin substrate accommodated in the vacuum chamber 16 is used. Each time the shape or size of the material 12 changes, the introduction head 66 is moved under operation control by the controller 76. Thereby, the first and second nozzles 68 and 70 are set so that the distance between the surface of the resin base 12 and the gas inlets 56 of the first and second nozzles 68 and 70 is as constant as possible. The opening position of each gas inlet 56 in the vacuum chamber 16 is changed.

  As described above, when the coating film forming apparatus of the present embodiment is used, the gases of the first and second nozzles 68 and 70 are irrespective of the difference in the shape and size of the resin base material 12 accommodated in the vacuum chamber 16. The opening position of the introduction port 56 in the vacuum chamber 16 can be changed to an appropriate position close to the surface of the resin base material 12. As a result, the film forming speed of the coating 14 on the surface of the resin substrate 12 is shortened, and the resin substrate 12 of the coating 14 is caused by the difference in shape and size of the resin substrates 12 and 13. Variations in the adhesion efficiency to the surface can be eliminated or sufficiently suppressed.

  Therefore, even in the film forming apparatus of the present embodiment, the same actions and effects as those obtained in the first embodiment can be enjoyed effectively.

  According to the coating film forming apparatus, the opening position of the gas inlet 56 of each of the first and second nozzles 68 and 70 in the vacuum chamber 16 is controlled under the operation control of the controller 74. 72 can be automatically changed. As a result, regardless of the difference in the shape and size of the resin base material 12 accommodated in the vacuum chamber 16, the opening positions of the gas inlets 56 of the first and second nozzles 68 and 70 in the vacuum chamber 16. Can be more accurately controlled at an appropriate position close to the surface of the resin substrate 12. Therefore, the coating film 14 can be formed more efficiently in a sufficiently short cycle on the surfaces of a plurality of types of resin base materials 12 having different shapes and sizes.

  FIG. 5 shows still another embodiment of a resin base film forming apparatus having a structure according to the present invention. As apparent from FIG. 5, in the film forming apparatus of the present embodiment, the first gas introduction pipe 50 for introducing the monosilane gas from the outside to the side wall portion 22 of the chamber body 18 and the second for introducing the oxygen gas from the outside. The gas introduction pipe 52 is installed through the side wall portion 22 so as to communicate with the inside and outside of the chamber body 18. The first and second gas introduction pipes 50 and 52 are disposed above the resin base material 12 accommodated in the vacuum chamber 16 at the end portion on the entry side into the vacuum chamber (chamber body 18). The first introduction head 78 and the second introduction head 79 are connected to each other.

  Inside the first introduction head 78, a monosilane gas flow passage (not shown) through which the monosilane gas guided by the first gas introduction pipe 50 is circulated is provided. Inside the second introduction head 79, an oxygen gas flow passage (not shown) through which the oxygen gas guided to the second gas introduction pipe 52 is circulated is provided. The first introduction head 78 and the second introduction head 79 are provided with a plurality of first nozzles 80 and a plurality of second nozzles 84, respectively. Each of the first and second nozzles 80 and 84 has a gas introduction port 56 that opens toward the resin base material 12 positioned below the first and second introduction heads 78 and 79. Furthermore, the first nozzle 80 and the second nozzle 84 are each provided with an electromagnetic valve 82 as an opening / closing mechanism for opening / closing the gas inlet 56. These electromagnetic valves 82 are electrically connected to a controller (not shown), and the opening / closing operation is controlled by the controller.

  As a result, monosilane gas is introduced into the vacuum chamber 16 only through the gas inlet 56 of the first nozzle 80 in which the electromagnetic valve 82 is opened under the control of the controller among the plurality of first nozzles 80 of the first introduction head 78. To be introduced. Further, among the plurality of second nozzles 84 of the second introduction head 79, oxygen gas passes through the gas introduction port 56 of the second nozzle 84 whose electromagnetic valve 82 is opened under the control of the controller, and is supplied into the vacuum chamber 16. To be introduced.

  Thus, in the present embodiment, any one of the plurality of first nozzles 80 provided in the first introduction head 78 is selected, and only the electromagnetic valve 82 provided in the selected first nozzle 80 is selected. By performing the opening operation, the opening position of the gas inlet 56 through which the monosilane gas is introduced into the vacuum chamber 16 can be selectively changed. Further, by selecting any one of the plurality of second nozzles 84 provided in the second introduction head 79 and opening only the electromagnetic valve 82 provided in the selected second nozzle 84. The opening position of the gas inlet 56 for introducing oxygen gas into the vacuum chamber 16 can be selectively changed. As is clear from this, here, the first and second gas introduction pipes 50 and 52, the first and second introduction heads 78 and 79, and the first and second nozzles 80 and 84 introduce gas. The solenoid valve 82 constitutes an opening position changing mechanism.

  Then, when the coating film 14 is formed on the surface of the resin substrate 12 using the coating film forming apparatus of this embodiment having such a structure, first, the resin substrate 12 is accommodated in the vacuum chamber 16. Thereafter, the vacuum chamber 16 is depressurized by the vacuum pump 48. At this time, as in the case of using the film forming apparatus according to the first and second embodiments, the resin base material 12 is heated by the plurality of far infrared heaters 40, while the resin power source is The material 12 is negatively charged.

  Then, any one of the plurality of first nozzles 80 of the first introduction head 78 and the plurality of second nozzles 84 of the second introduction head 79 is selected, and the selected first and second nozzles are selected. The electromagnetic valves 82 and 84 are opened to open the gas inlets 56 of the selected first and second nozzles 80 and 84 into the vacuum chamber 16. At this time, the opening position of the opened gas introduction port 56 is set to an appropriate position close to the surface of the resin substrate 12 according to the shape and size of the resin substrate 12 accommodated in the vacuum chamber 16. The first and second nozzles 80, 84 having the gas inlet 56 to be opened are selected by the controller.

Thereafter, as in the case of using the film forming apparatus according to the first and second embodiments, monosilane gas and oxygen gas are supplied from the gas inlets 56 of the first and second nozzles 80 and 84 into the vacuum chamber 16. On the other hand, a high frequency current is supplied to the induction coil 28. As a result, an induction electromagnetic field is formed in the vacuum chamber 16, and the monosilane gas and oxygen gas introduced into the vacuum chamber 16 are turned into plasma to generate monosilane gas inductively coupled plasma and oxygen gas inductively coupled plasma. Then, these inductively coupled plasmas are reacted with each other to generate SiO ₂ , which is deposited on the surface of the resin substrate 12. Thus, the coating film 14 made of SiO ₂ is formed on the surface of the resin substrate 12.

  When the coating film 14 is formed on the surfaces of a plurality of types of resin base materials 12 having different shapes, sizes, etc. using the coating film forming apparatus of this embodiment, the resin substrate accommodated in the vacuum chamber 16 is used. Each time the shape or size of the material 12 changes, the surface of the resin base 12 and the first and second nozzles are changed by appropriately changing the first and second nozzles 80 and 84 for opening the electromagnetic valve 82. The opening positions of the gas inlets 56 of the first and second nozzles 80 and 84 in the vacuum chamber 16 are set so that the distances between the gas inlets 56 and 68 are as constant as possible. Change it.

  As described above, even in the coating film forming apparatus of the present embodiment, each of the first and second nozzles 68 and 70 is independent of the shape and size of the resin base material 12 accommodated in the vacuum chamber 16. The opening position of the gas inlet 56 in the vacuum chamber 16 can be changed to an appropriate position close to the surface of the resin substrate 12. Therefore, the same actions and effects as those obtained in the first and second embodiments can be enjoyed effectively.

  In such a film forming apparatus, the automation of the mechanism for changing the opening position of the gas introduction port 56 in the vacuum chamber 16 is performed by the electromagnetic valve 82 provided in the first and second nozzles 80 and 84. It can be realized easily and at low cost.

  The specific configuration of the present invention has been described in detail above. However, this is merely an example, and the present invention is not limited by the above description.

  For example, the arrangement position of the gas introduction port 56 in the vacuum chamber 16 is not limited to the illustrated one, and may be arranged so as to be located on both sides of the resin base material 12 interposed therebetween.

  In that case, the structure of the introduction head provided with the gas introduction port 56 located on one side with the resin base material 12 interposed therebetween, and the introduction provided with the gas introduction port 56 located on the opposite side thereof. The structures of the heads may be the same as each other. For example, as shown in FIG. 6, the structures of the introduction heads may be different from each other. FIG. 6 shows an introduction head 54 provided in the film forming apparatus of the first embodiment and an introduction head 66 provided in the film forming apparatus of the second embodiment with the resin base material 12 interposed therebetween. Although the example which has been arranged on both sides is shown, the combination of these introduction heads is free. In FIG. 6, 88 is a support plate made of an insulator that supports the resin base material 12, and 86 is a support protrusion that supports both the support plate 88 and the resin base material 12.

  Further, the structure of the induction electromagnetic field forming means is not particularly limited as long as it can form an induction electromagnetic field in the vacuum chamber 16 by supplying a high frequency current. Therefore, for example, a conventionally known structure such as a structure in which a metal wire is meandered or a structure in which a metal tube is wound or meandered can be employed.

  In addition, the structure in which the introduction heads 54 of the first and second gas introduction pipes 50 and 52 constituting the gas introduction means can be expanded and contracted is also shown in the first embodiment. It is not limited at all. For example, the introduction head 54 has a double tube structure in which an outer tube and an inner tube are overlapped with each other. Then, a part of the outer tube and a part of the inner tube are slidably overlapped with each other between the cylindrical portions, and a stretchable structure is realized in the overlapped portion, while the outer tube Part of the inner tube and part of the inner tube are slidably overlapped with each other with the inner and outer surfaces being spherical, and the overlapping part can be freely bent and deformed like a ball joint. A structure can also be realized.

  In addition to the illustrated far-infrared heater, the non-contact heating means for heating the resin base material 12 accommodated in the vacuum chamber 16 in a non-contact manner, for example, a heating device that emits near infrared rays such as a halogen lamp, Various known devices such as a device for irradiating the resin substrate 12 with microwaves to heat the resin substrate 12 with microwaves (for example, a magnetron) can be used.

  Moreover, when heating the resin base material 12, the well-known contact-type heating apparatus which employ | adopts resistance heating systems, such as an electrothermal sheet, can also be used besides a non-contact-type heating apparatus. When such a heating device is used, a method of bringing the heating device into direct contact with the resin base material 12 or a method of bringing the heating device into contact with the resin base material 12 through a heat transfer body is employed. In the case of carrying out the latter method, specifically, for example, by bringing a heat transfer body made of an insulator or the like into contact with the resin base material 12 and further bringing a heating device into contact with the heat transfer body. The method of conducting the heat of the heating device to the resin base material 12 in a vacuum through the heat transfer body is performed.

  In addition to the illustrated bias power source 42, a known device such as an ion beam irradiation device or a corona charging gun can also be adopted as the withstand means for withstanding the resin substrate 12 accommodated in the vacuum chamber 16.

  Moreover, when charging the resin base material 12, it does not necessarily charge negatively, For example, depending on the kind of reaction gas, the resin base material 12 may be charged positively. The charging of the resin base material 12 is performed in order to attract ions (inductively coupled plasma) of the reaction gas to be made rich in the atmosphere around the resin base material 12. Therefore, the resin substrate 12 is positively or negatively charged depending on the kind of ions of the reaction gas. Even when the resin substrate 12 is positively charged, it is desirable that the voltage value to be applied is set to a value within the range of about +50 to +6000 V for the same reason as described above.

  Furthermore, the resin material constituting the resin base 12 is not only a transparent resin material such as an acrylic resin other than polycarbonate resin, but also, for example, an opaque resin material or a semi-transparent material generally used as a vehicle interior product forming material. Resin materials can also be used. That is, the resin substrate 12 on which the coating 14 is formed is not limited to the resin glass 10.

  As vehicle interior parts, which are applied products when using the resin base material 12 made of an opaque resin material, various types of durability such as a center cluster, a console upper, various switch bases, etc. that require various durability such as abrasion resistance are required. Examples of design parts are illustrated.

  Further, even when the resin base material 12 made of a transparent resin material is used, the applicable parts include, in addition to the illustrated vehicle rear window, a vehicle front window, a side window, various displays, There is a cover for the display unit.

Further, examples of the film that can be formed by the film forming apparatus according to the present invention include a film made of SiON or a film made of an organic material such as DLC (diamond-like carbon) in addition to the film made of SiO ₂ exemplified. Of course, the film formed by such a film forming apparatus can be used for applications other than the protective film.

  In addition, although not enumerated one by one, the present invention can be carried out in a mode to which various changes, modifications, improvements, etc. are added based on the knowledge of those skilled in the art. It goes without saying that all are included in the scope of the present invention without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 10 Resin glass 12, 13 Resin base material 14 Coating 16 Vacuum chamber 28 Inductive coil 32 High frequency power supply 40 Far infrared heater 42 Bias power supply 46 Exhaust pipe 48 Vacuum pump 50 First gas introduction pipe 52 Second gas introduction pipe 54, 66 Introduction head 56 Gas introduction port 58 Bellows portion 78 First introduction head 79 Second introduction head 82 Solenoid valve

Claims (4)

A vacuum chamber capable of accommodating a substrate made of a resin molded product, an exhaust means for exhausting the inside of the vacuum chamber so as to be in a reduced pressure state, a gas introducing means for introducing a reaction gas into the vacuum chamber in a reduced pressure state, The reaction generated by the introduction of the reaction gas into the vacuum chamber in which the induction electromagnetic field is formed, including induction electromagnetic field forming means for forming an induction electromagnetic field in the vacuum chamber by supplying a high frequency current A resin substrate surface film forming apparatus configured to form a film on the surface of the resin substrate housed in the vacuum chamber using inductively coupled plasma of gas,
The gas introduction means includes an introduction head having a gas introduction port that opens into the vacuum chamber, and an opening position changing mechanism that changes an opening position of the gas introduction port of the introduction head in the vacuum chamber. An apparatus for forming a surface coating film on a resin base material, wherein:   The apparatus for forming a surface coating film on a resin substrate according to claim 1, further comprising heating means for heating the resin substrate housed in the vacuum chamber in a reduced pressure state.   The apparatus for forming a surface coating film on a resin base material according to claim 2, wherein the heating means comprises a non-contact type heating means for heating the resin base material in a non-contact manner. The resin substrate according to any one of claims 1 to 3, further comprising charging means for charging a surface of the resin substrate housed in the vacuum chamber in a reduced pressure state. Surface film forming apparatus.

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