JP2012106364A5 - - Google Patents
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- JP2012106364A5 JP2012106364A5 JP2010255586A JP2010255586A JP2012106364A5 JP 2012106364 A5 JP2012106364 A5 JP 2012106364A5 JP 2010255586 A JP2010255586 A JP 2010255586A JP 2010255586 A JP2010255586 A JP 2010255586A JP 2012106364 A5 JP2012106364 A5 JP 2012106364A5
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- water
- silicon
- protective film
- repellent region
- film
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Claims (9)
前記吐出面は平面視で前記ノズル孔を含み表面に撥水膜が形成されている撥水領域と前記撥水領域を囲む環状の領域である非撥水領域とに区画されており、
前記撥水領域には前記撥水膜と前記シリコン基板との間にインク保護膜が形成されており、前記非撥水領域にはインク保護膜が前記撥水領域に形成された前記インク保護膜より薄く形成されているか又は全く形成されておらず、前記シリコン基板の端面にはインク保護膜が全く形成されていないことを特徴とするシリコンノズル基板。 A silicon nozzle substrate having a nozzle hole formed through a silicon substrate and ejecting ink droplets from the ejection surface side through the nozzle hole,
The discharge surface is partitioned into a water-repellent region that includes the nozzle holes in a plan view and a water-repellent film is formed on the surface, and a non-water-repellent region that is an annular region surrounding the water-repellent region,
The ink protective film ink protective film is formed, the ink protective layer on the non-water-repellent region is formed on the water-repellent region between the silicon substrate and the water repellent film on the water-repellent region not been or no form is made thinner, the silicon nozzle substrate, wherein the ink protection film on the end face of the silicon substrate is not formed at all.
前記インク保護膜はシロキサンを原料とするプラズマＣＶＤ法で形成された膜であることを特徴とするシリコンノズル基板。 The silicon nozzle substrate according to claim 1,
The silicon nozzle substrate, wherein the ink protective film is a film formed by a plasma CVD method using siloxane as a raw material.
前記撥水領域における前記インク保護膜の膜厚は０．５μｍから１．５μｍの範囲であり、
前記非撥水領域における前記インク保護膜の膜厚は前記撥水領域における該膜厚の３割以下であることを特徴とするシリコンノズル基板。 The silicon nozzle substrate according to claim 2,
The thickness of the ink protective film in the water repellent region is in the range of 0.5 μm to 1.5 μm,
The silicon nozzle substrate, wherein the thickness of the ink protective film in the non-water-repellent region is 30% or less of the thickness in the water-repellent region.
前記シリコン基板の一方の面である吐出面及び前記シリコン基板の端面にインク保護膜を形成する第２の工程と、
前記インク保護膜の表面に撥水膜を形成する第３の工程と、
前記吐出面を、平面視で前記ノズル孔を含む領域である撥水領域と前記撥水領域を囲む環状の領域である非撥水領域とに区画して、前記撥水領域にマスク部材を被せる第４の工程と、
前記シリコン基板にエッチングを施して、前記マスク部材で覆われていない領域の前記撥水膜を除去し、さらに前記インク保護膜を、前記端面では完全に除去し、前記非撥水領域では除去するか又は元の膜厚よりも薄くする第５の工程と、
を記載の順に実施することを特徴とするシリコンノズル基板の製造方法。 A first step of forming a nozzle hole through the silicon substrate;
A second step of forming an ink protective film on the ejection surface, which is one surface of the silicon substrate, and an end surface of the silicon substrate;
A third step of forming a water repellent film on the surface of the ink protective film;
The ejection surface is partitioned into a water-repellent region that is a region including the nozzle holes in a plan view and a non-water-repellent region that is an annular region surrounding the water-repellent region, and the water-repellent region is covered with a mask member. A fourth step;
Etching is performed on the silicon substrate to remove the water repellent film in a region not covered with the mask member, and the ink protective film is completely removed on the end surface and removed on the non-water repellent region. Or a fifth step of making it thinner than the original film thickness,
Are performed in the order of description, and the manufacturing method of the silicon nozzle substrate characterized by the above-mentioned.
前記第２の工程は、シロキサンを原料とするプラズマＣＶＤ法により前記インク保護膜を形成する工程であることを特徴とするシリコンノズル基板の製造方法。 A method for producing a silicon nozzle substrate according to claim 6,
The method of manufacturing a silicon nozzle substrate, wherein the second step is a step of forming the ink protective film by a plasma CVD method using siloxane as a raw material.
前記第２の工程は、前記吐出面に膜厚が０．５μｍから１．５μｍの範囲の前記インク保護膜を形成する工程であり、
前記第５の工程は、前記インク保護膜を膜厚が３割以下となるまでエッチングする工程であることを特徴とするシリコンノズル基板の製造方法。 A method for producing a silicon nozzle substrate according to claim 7,
The second step is a step of forming the ink protective film having a thickness of 0.5 μm to 1.5 μm on the ejection surface.
The method of manufacturing a silicon nozzle substrate, wherein the fifth step is a step of etching the ink protective film until the film thickness becomes 30% or less.
前記第５の工程は、ＣＦ系ガスを用いてドライエッチングする工程であることを特徴とするシリコンノズル基板の製造方法。 A method for producing a silicon nozzle substrate according to claim 8,
The method of manufacturing a silicon nozzle substrate, wherein the fifth step is a step of performing dry etching using a CF-based gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010255586A JP5664157B2 (en) | 2010-11-16 | 2010-11-16 | Silicon nozzle substrate and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010255586A JP5664157B2 (en) | 2010-11-16 | 2010-11-16 | Silicon nozzle substrate and manufacturing method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012106364A JP2012106364A (en) | 2012-06-07 |
| JP2012106364A5 true JP2012106364A5 (en) | 2013-11-28 |
| JP5664157B2 JP5664157B2 (en) | 2015-02-04 |
Family
ID=46492553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010255586A Active JP5664157B2 (en) | 2010-11-16 | 2010-11-16 | Silicon nozzle substrate and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5664157B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6899211B2 (en) * | 2016-11-29 | 2021-07-07 | ローム株式会社 | Nozzle substrate, inkjet printed head and nozzle substrate manufacturing method |
| JP6961453B2 (en) * | 2017-10-13 | 2021-11-05 | キヤノン株式会社 | Processing method of penetrating substrate and manufacturing method of liquid discharge head |
| JP2022049855A (en) | 2020-09-17 | 2022-03-30 | 株式会社リコー | Liquid discharge head, liquid discharge unit, and liquid discharge device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1016240A (en) * | 1996-07-08 | 1998-01-20 | Ricoh Co Ltd | Ink jet head and ink jet recorder |
| JP3785852B2 (en) * | 1999-05-20 | 2006-06-14 | コニカミノルタホールディングス株式会社 | Inkjet head manufacturing method |
| JP2004034331A (en) * | 2002-06-28 | 2004-02-05 | Konica Minolta Holdings Inc | Inkjet head |
| JP4200484B2 (en) * | 2003-05-07 | 2008-12-24 | セイコーエプソン株式会社 | Method for forming liquid repellent film on nozzle plate, nozzle plate, and inkjet printer head |
| JP4957896B2 (en) * | 2007-03-13 | 2012-06-20 | セイコーエプソン株式会社 | Method for manufacturing nozzle forming member, method for manufacturing liquid jet head, and method for manufacturing liquid jet head unit |
| JP5187486B2 (en) * | 2007-07-05 | 2013-04-24 | セイコーエプソン株式会社 | Manufacturing method of liquid jet head unit |
| JP5315975B2 (en) * | 2008-12-19 | 2013-10-16 | セイコーエプソン株式会社 | Nozzle substrate, droplet discharge head, droplet discharge apparatus, and manufacturing method thereof |
| JP5287447B2 (en) * | 2009-04-09 | 2013-09-11 | セイコーエプソン株式会社 | Nozzle substrate, and droplet discharge head and droplet discharge apparatus including the same |
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2010
- 2010-11-16 JP JP2010255586A patent/JP5664157B2/en active Active
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