JP2012100708A5 - - Google Patents

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JP2012100708A5
JP2012100708A5 JP2010249173A JP2010249173A JP2012100708A5 JP 2012100708 A5 JP2012100708 A5 JP 2012100708A5 JP 2010249173 A JP2010249173 A JP 2010249173A JP 2010249173 A JP2010249173 A JP 2010249173A JP 2012100708 A5 JP2012100708 A5 JP 2012100708A5
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connection point
circuit
semiconductor switch
potential
living tissue
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JP2010249173A
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JP5776165B2 (en
JP2012100708A (en
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Priority claimed from JP2010249173A external-priority patent/JP5776165B2/en
Priority to US13/289,440 priority patent/US8504167B2/en
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(1) 電源側に接続される第1半導体スイッチと接地側に接続される第3半導体スイッチを直列接続してなる第1直列部と,電源側に接続される第2半導体スイッチと接地側に接続される第4半導体スイッチを直列接続してなる第2直列部とが並列接続されてなるHブリッジ回路と、前記第1直列部の第1半導体スイッチと第3半導体スイッチとの間の第1接続点に接続される刺激電極と、前記第2直列部の第2半導体スイッチと第4半導体スイッチとの間の第2接続点に接続される対向電極と、前記接続点における電位を調節するための電位補償回路と、を備えることを特徴とする。
(2) (1)の生体組織用刺激回路において、前記電位補償回路はオフとされた前記半導体スイッチの寄生PN接合が順バイアスにされない電圧範囲内となるように前記第1接続点又は前記第2接続点における電位を調節することを特徴とする。
(3) (2)の生体組織用刺激回路において、前記電位補償回路は前記第1接続点,及び第2接続点の少なくとも一方の電位を検出する検出回路を有することを特徴とする。
(4) (3)の生体組織用刺激回路において、前記検出回路が前記第1接続点及び第2接続点の両方に接続されている場合には、前記検出回路は、前記第1接続点及び第2接続点の平均電位もしくは前記第1接続点及び第2接続点のうち高い方又は低い方の電位を検出することを特徴とする。
(1) A first series part formed by connecting a first semiconductor switch connected to the power supply side and a third semiconductor switch connected to the ground side in series, a second semiconductor switch connected to the power supply side, and a ground side An H bridge circuit in which a second series part formed by serially connecting the fourth semiconductor switches to be connected is connected in parallel, and a first between the first semiconductor switch and the third semiconductor switch of the first series part. In order to adjust the potential at the connection point, the stimulation electrode connected to the connection point, the counter electrode connected to the second connection point between the second semiconductor switch and the fourth semiconductor switch of the second series part And a potential compensation circuit.
(2) In the stimulating circuit for living tissue according to (1), the potential compensation circuit is turned off so that the parasitic PN junction of the semiconductor switch is within a voltage range that is not forward biased. It is characterized in that the potential at the two connection points is adjusted.
(3) In the stimulation circuit for living tissue according to (2), the potential compensation circuit includes a detection circuit that detects a potential of at least one of the first connection point and the second connection point.
(4) In the biological tissue stimulation circuit according to (3), when the detection circuit is connected to both the first connection point and the second connection point, the detection circuit includes the first connection point and An average potential of the second connection point or a higher or lower potential of the first connection point and the second connection point is detected.

Claims (4)

電源側に接続される第1半導体スイッチと接地側に接続される第3半導体スイッチを直列接続してなる第1直列部と,電源側に接続される第2半導体スイッチと接地側に接続される第4半導体スイッチを直列接続してなる第2直列部とが並列接続されてなるHブリッジ回路と、
前記第1直列部の第1半導体スイッチと第3半導体スイッチとの間の第1接続点に接続される刺激電極と、
前記第2直列部の第2半導体スイッチと第4半導体スイッチとの間の第2接続点に接続される対向電極と、
前記接続点における電位を調節するための電位補償回路と、
を備えることを特徴とする生体組織用刺激回路。
A first series part formed by serially connecting a first semiconductor switch connected to the power supply side and a third semiconductor switch connected to the ground side, and a second semiconductor switch connected to the power supply side and connected to the ground side. An H-bridge circuit in which a second series part formed by connecting fourth semiconductor switches in series is connected in parallel;
A stimulation electrode connected to a first connection point between the first semiconductor switch and the third semiconductor switch of the first series part;
A counter electrode connected to a second connection point between the second semiconductor switch and the fourth semiconductor switch of the second series portion;
A potential compensation circuit for adjusting the potential at the connection point;
A stimulating circuit for living tissue, comprising:
請求項1の生体組織用刺激回路において、前記電位補償回路はオフとされた前記半導体スイッチの寄生PN接合が順バイアスにされない電圧範囲内となるように前記第1接続点又は前記第2接続点における電位を調節することを特徴とする生体組織用刺激回路。   2. The stimulation circuit for living tissue according to claim 1, wherein the potential compensation circuit is turned off so that the parasitic PN junction of the semiconductor switch is within a voltage range that is not forward biased. A stimulation circuit for living tissue, characterized by adjusting a potential in the body. 請求項2の生体組織用刺激回路において、前記電位補償回路は前記第1接続点,及び第2接続点の少なくとも一方の電位を検出する検出回路を有することを特徴とする生体組織用刺激回路。   3. The stimulation circuit for living tissue according to claim 2, wherein the potential compensation circuit includes a detection circuit that detects a potential of at least one of the first connection point and the second connection point. 請求項3の生体組織用刺激回路において、
前記検出回路が前記第1接続点及び第2接続点の両方に接続されている場合には、前記検出回路は、前記第1接続点及び第2接続点の平均電位もしくは前記第1接続点及び第2接続点のうち高い方又は低い方の電位を検出することを特徴とする生体組織用刺激回路。
The stimulation circuit for living tissue according to claim 3,
In the case where the detection circuit is connected to both the first connection point and the second connection point, the detection circuit has an average potential of the first connection point and the second connection point or the first connection point and A stimulation circuit for living tissue that detects a higher or lower potential of the second connection points.
JP2010249173A 2010-11-05 2010-11-05 Biological tissue stimulation circuit Active JP5776165B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010249173A JP5776165B2 (en) 2010-11-05 2010-11-05 Biological tissue stimulation circuit
US13/289,440 US8504167B2 (en) 2010-11-05 2011-11-04 Living tissue stimulation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010249173A JP5776165B2 (en) 2010-11-05 2010-11-05 Biological tissue stimulation circuit

Publications (3)

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JP2012100708A JP2012100708A (en) 2012-05-31
JP2012100708A5 true JP2012100708A5 (en) 2013-12-12
JP5776165B2 JP5776165B2 (en) 2015-09-09

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US9821159B2 (en) 2010-11-16 2017-11-21 The Board Of Trustees Of The Leland Stanford Junior University Stimulation devices and methods
US8918181B2 (en) 2010-11-16 2014-12-23 The Board Of Trustees Of The Leland Stanford Junior University Systems and methods for treatment of dry eye
JP6048053B2 (en) * 2012-10-11 2016-12-21 株式会社ニデック Biological tissue stimulator
EP2967817B1 (en) 2013-03-12 2021-03-10 Oculeve, Inc. Implant delivery devices and systems
WO2014172693A2 (en) 2013-04-19 2014-10-23 Oculeve, Inc. Nasal stimulation devices and methods
US9770583B2 (en) 2014-02-25 2017-09-26 Oculeve, Inc. Polymer formulations for nasolacrimal stimulation
WO2015164418A1 (en) * 2014-04-25 2015-10-29 Boston Scientific Neuromodulation Corporation System and method for electrical pulse charge compensation for implantable medical device capacitance loading effects
ES2792856T3 (en) 2014-07-25 2020-11-12 Oculeve Inc Stimulation patterns to treat dry eyes
AU2015335772B2 (en) 2014-10-22 2020-07-09 Oculeve, Inc. Contact lens for increasing tear production
AU2015335776B2 (en) 2014-10-22 2020-09-03 Oculeve, Inc. Stimulation devices and methods for treating dry eye
KR101687108B1 (en) * 2015-07-10 2016-12-15 인하대학교 산학협력단 Charge balancing technique for neural micro stimulator using charge detectors
US10426958B2 (en) 2015-12-04 2019-10-01 Oculeve, Inc. Intranasal stimulation for enhanced release of ocular mucins and other tear proteins
US10252048B2 (en) 2016-02-19 2019-04-09 Oculeve, Inc. Nasal stimulation for rhinitis, nasal congestion, and ocular allergies
AU2017260237A1 (en) 2016-05-02 2018-11-22 Oculeve, Inc. Intranasal stimulation for treatment of meibomian gland disease and blepharitis
US10610095B2 (en) 2016-12-02 2020-04-07 Oculeve, Inc. Apparatus and method for dry eye forecast and treatment recommendation
KR102093188B1 (en) * 2018-12-24 2020-03-25 인하대학교 산학협력단 Multi-Bit Charge Detecting Circuit for Bio Current Stimulator
CN116943022B (en) * 2023-07-25 2024-04-30 北京领创医谷科技发展有限责任公司 Charge balance circuit and charging and discharging method

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