JP2012089603A - Substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance the cooling effect without increasing the usage of a cooling medium of a semiconductor manufacturing apparatus.SOLUTION: A substrate processing device has a processing chamber processing substrates, a heating section heating the interior of the processing chamber, at least one cooling section provided outside the processing chamber and cooling the processing chamber and devices located outside the processing chamber, and a heat transfer part transferring heat of a coolant to be supplied to the cooling section to the coolant discharged from the cooling section.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate, and efficiency improvement of cooling water in a semiconductor device manufacturing apparatus including a step of processing a substrate using the apparatus.

  Generally, a technique for discharging heat generated from a semiconductor device manufacturing apparatus or a substrate processing apparatus using a liquid as a medium is known. Patent Document 1 discloses a configuration of an apparatus that discharges heat generated from a semiconductor device manufacturing apparatus with water.

JP-A-8-316155

  In a cooling structure of a semiconductor manufacturing apparatus, a method of increasing the flow rate of cooling water or a method of increasing pressure has been used as a method of increasing the amount of exhaust heat. In these methods, there is a risk that the piping is damaged and water leaks. For this reason, there is a problem that a margin for an increase in the amount of exhaust heat of the manufacturing apparatus is low.

  According to one aspect of the present invention, a processing chamber for processing a substrate, a heating unit for heating the processing chamber, a cooling unit provided outside the processing chamber for cooling equipment outside the processing chamber, and the cooling unit There is provided a substrate processing apparatus comprising: a heat exchanging portion that heat-transfers the heat of the supplied refrigerant to the discharged refrigerant after being heated by the cooling means.

  According to another aspect of the present invention, a step of carrying the substrate into the processing chamber, a step of heating the processing chamber by the heating unit, and a cooling unit provided outside the processing chamber and cooling the equipment outside the processing chamber. There is provided a method for manufacturing a semiconductor device, comprising: a step; and a step of moving heat of a refrigerant supplied to the cooling means to a refrigerant discharged from the cooling means.

  According to the substrate processing apparatus and the method for manufacturing a semiconductor device according to the present invention, the cooling performance by the cooling water can be improved without increasing the pressure and flow rate of the cooling water.

It is a perspective view of the substrate processing apparatus which enforces the manufacturing method of the semiconductor device concerning one embodiment of the present invention. It is side surface perspective drawing of the substrate processing apparatus which enforces the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a partial cut front view of the substrate processing apparatus which enforces the manufacturing method of the semiconductor device concerning one embodiment of the present invention. 1 is a cross-sectional view of a processing chamber of a substrate processing apparatus for implementing a method for manufacturing a semiconductor device according to an embodiment of the present invention. It is a cooling water system | strain conceptual diagram of the substrate processing apparatus which enforces the manufacturing method of the semiconductor device which concerns on one Embodiment of this invention. It is a cooling water system diagram of the substrate processing apparatus which enforces the manufacturing method of the semiconductor device concerning one embodiment of the present invention. It is a perspective view of the Peltier device installation part in the heat transfer part of the substrate processing apparatus which enforces the manufacturing method of the semiconductor device concerning one embodiment of the present invention. It is a perspective view for demonstrating the Peltier device which concerns on one Embodiment of this invention.

  Hereinafter, an embodiment of the present invention will be described.

In the best mode for carrying out the present invention, as an example, the substrate processing apparatus is configured as a semiconductor manufacturing apparatus that performs processing steps in a method of manufacturing a semiconductor device (IC). In the following description, as a substrate processing apparatus, oxidation, diffusion treatment, chemical vapor deposition (Chemical vapor deposition)
A case where a vertical apparatus (hereinafter simply referred to as a processing apparatus) that performs Vapor Deposition (CVD) or the like will be described. FIG. 1 is a perspective view of a processing apparatus applied to the present invention. FIG. 2 is a side perspective view of the processing apparatus shown in FIG.

As shown in FIGS. 1 and 2, the present invention uses a FOUP (substrate container; hereinafter referred to as a pod) 110 as a wafer carrier containing a wafer (substrate) 200 (not shown) made of silicon or the like. The processing apparatus 100 includes a casing 111. A front maintenance port 103 as an opening provided for maintenance is opened at the front front portion of the front wall 111a of the casing 111, and a front maintenance door 104 for opening and closing the front maintenance port 103 is installed. Yes.
A pod loading / unloading port 112 is opened on the front wall 111a of the housing 111 so as to communicate between the inside and the outside of the housing 111. The pod loading / unloading port 112 is opened by a front shutter (substrate container loading / unloading opening / closing mechanism) 113. It is designed to be opened and closed.
A load port (substrate container delivery table) 114 is installed in front of the front side of the pod loading / unloading port 112, and the load port 114 is configured so that the pod 110 is placed and aligned. The pod 110 is carried onto the load port 114 by an in-process carrying device (not shown), and is also carried out from the load port 114.

A rotary pod shelf (substrate container mounting shelf) 105 is installed at an upper portion of the casing 111 in a substantially central portion in the front-rear direction. The rotary pod shelf 105 stores a plurality of pods 110. It is configured. In other words, the rotary pod shelf 105 is vertically arranged and intermittently rotated in a horizontal plane, and a plurality of shelf boards (supported by a substrate container) that are radially supported by the support 116 at each of the upper, middle, and lower positions. And a plurality of shelf plates 117 are configured to hold the pods 110 in a state where a plurality of pods 110 are respectively placed.
A pod transfer device (substrate container transfer device) 118 is installed between the load port 114 and the rotary pod shelf 105 in the housing 111, and the pod transfer device 118 moves up and down while holding the pod 110. A pod elevator (substrate container lifting mechanism) 118a and a pod transfer mechanism (substrate container transfer mechanism) 118b as a transfer mechanism are configured. The pod transfer device 118 includes a pod elevator 118a and a pod transfer mechanism 118b. The pod 110 is transported between the load port 114, the rotary pod shelf 105, and the pod opener (substrate container lid opening / closing mechanism) 121 by continuous operation.

A sub-housing 119 is constructed across the rear end of the lower portion of the housing 111 at a substantially central portion in the front-rear direction. A pair of wafer loading / unloading ports (substrate loading / unloading ports) 120 for loading / unloading the wafer 200 into / from the sub-casing 119 are arranged on the front wall 119a of the sub-casing 119 in two vertical stages. A pair of pod openers 121 are installed at the upper and lower wafer loading / unloading openings 120.
The pod opener 121 includes a mounting table 122 on which the pod 110 is placed, and a cap attaching / detaching mechanism (lid attaching / detaching mechanism) 123 that attaches / detaches a cap (lid) to the pod 110. The pod opener 121 is configured to open and close the wafer loading / unloading port of the pod 110 by attaching / detaching the cap of the pod 110 placed on the placing table 122 by the cap attaching / detaching mechanism 123.

  The sub-housing 119 constitutes a transfer chamber 124 that is fluidly isolated from the installation space of the pod transfer device 118 and the rotary pod shelf 105. A wafer transfer mechanism (substrate transfer mechanism) 125 is installed in the front region of the transfer chamber 124, and the wafer transfer mechanism 125 rotates the wafer 200 in the horizontal direction or can move the wafer 200 in the horizontal direction. Substrate transfer device) 125a and wafer transfer device elevator (substrate transfer device lifting mechanism) 125b for raising and lowering wafer transfer device 125a. As schematically shown in FIG. 1, the wafer transfer apparatus elevator 125 b is installed between the right end of the pressure-resistant casing 111 and the right end of the front area of the moving chamber 124 of the sub casing 119. By the continuous operation of the wafer transfer device elevator 125b and the wafer transfer device 125a, the tweezer (substrate holder) 125c of the wafer transfer device 125a is used as a placement portion for the wafer 200 with respect to the boat (substrate holder) 217. The wafer 200 is loaded (charged) and unloaded (discharged).

  In the rear region of the transfer chamber 124, a standby unit 126 that houses and waits for the boat 217 is configured. A process tube 11 is provided above the standby unit 126. The lower end portion of the process tube 11 is configured to be opened and closed by a furnace port shutter (furnace port opening / closing mechanism) 147.

As schematically shown in FIG. 1, a boat elevator (substrate holder lifting / lowering) for raising / lowering the boat 217 between the right end of the pressure-resistant casing 111 and the right end of the standby section 126 of the sub casing 119 is illustrated. Mechanism) 115 is installed. A seal cap 129 serving as a lid is horizontally installed on an arm 128 that is connected to a lift platform of the boat elevator 115, and the seal cap 129 supports the boat 217 vertically and the lower end of the process tube 11. It is comprised so that a part can be obstruct | occluded.
The boat 217 includes a plurality of holding members so that a plurality of (for example, about 50 to 125) wafers 200 are horizontally held in a state where their centers are aligned in the vertical direction. It is configured.

As schematically shown in FIG. 1, the left end of the transfer chamber 124 opposite to the wafer transfer device elevator 125b side and the boat elevator 115 side is a cleaned atmosphere or an inert gas. A clean unit 134 composed of a supply fan and a dust-proof filter is installed so as to supply clean air 133. Between the wafer transfer device 125a and the clean unit 134, although not shown, the circumferential direction of the wafer A notch aligning device 135 is installed as a substrate aligning device for aligning the positions.
The clean air 133 blown out from the clean unit 134 flows into the notch aligning device 135, the wafer transfer device 125a, and the boat 217 in the standby unit 126, and is then sucked in through a duct (not shown) to the outside of the housing 111. Exhaust is performed or it is circulated to the primary side (supply side) that is the suction side of the clean unit 134, and is again blown into the transfer chamber 124 by the clean unit 134.

  In addition, as shown in FIGS. 1, 2, 3, and 5, a controller 600 that controls the operation of the substrate processing apparatus is provided. The controller 600 connects the front shutter 113 and the pod opener 121 through the signal line A, the pod transfer device 118 through the signal line B, the column 116 through the signal line C, the wafer transfer mechanism D through the signal line D, and the signal line E. The pressure controller 21 is configured to control the drive controller 28 through the signal line F, the temperature controller 53 through the signal line G, the clean unit 134 through the signal line H, and the heat transfer unit 506 through the signal line I. . The following operations of the substrate processing apparatus are controlled by the controller 600.

(2) Operation of Substrate Processing Apparatus Next, the operation of the processing apparatus of the present invention will be described.
As shown in FIG. 1, when the pod 110 is supplied to the load port 114, the pod loading / unloading port 112 is opened by the front shutter 113, and the pod 110 on the load port 114 is enclosed by the pod transfer device 118. It is carried into the body 111 from the pod loading / unloading port 112.
The loaded pod 110 is automatically transported and delivered by the pod transport device 118 to the designated shelf 117 of the rotary pod shelf 105, temporarily stored, and then one pod opener from the shelf 117. It is conveyed to 121 and transferred to the mounting table 122, or directly transferred to the pod opener 121 and transferred to the mounting table 122. At this time, the wafer loading / unloading port 120 of the pod opener 121 is closed by the cap attaching / detaching mechanism 123, and the transfer chamber 124 is filled with clean air 133. For example, the transfer chamber 124 is filled with nitrogen gas as clean air 133, so that the oxygen concentration becomes an atmosphere of 20 ppm or less, which is set to be much lower than the oxygen concentration inside the casing 111 (atmosphere). Yes.

The pod 110 mounted on the mounting table 122 has its opening-side end face pressed against the opening edge of the wafer loading / unloading port 120 on the front wall 119a of the sub-housing 119, and the cap is removed by the cap attaching / detaching mechanism 123. The wafer loading / unloading port is opened.
When the pod 110 is opened by the pod opener 121, the wafer 200 is picked up from the pod 110 by the tweezer 125c of the wafer transfer device 125a through the wafer loading / unloading port, aligned with the notch alignment device 135, and then transferred to the transfer chamber 124. Is loaded into the standby unit 126 at the rear of the vehicle and loaded into the boat 217 (charging). The wafer transfer device 125 a that has transferred the wafer 200 to the boat 217 returns to the pod 110 and loads the next wafer 200 into the boat 217.

  During the loading operation of the wafer into the boat 217 by the wafer transfer mechanism 125 in the one (upper or lower) pod opener 121, the other (lower or upper) pod opener 121 receives another pod from the rotary pod shelf 105. 110 is transferred and transferred by the pod transfer device 118, and the opening operation of the pod 110 by the pod opener 121 is simultaneously performed.

  When a predetermined number of wafers 200 are loaded into the boat 217, the lower end portion of the process tube 11 closed by the furnace port shutter 147 is opened by the furnace port shutter 147. Subsequently, the boat 217 holding the wafers 200 is loaded into the process tube 11 when the seal cap 129 is lifted by the boat elevator 115.

  After loading, arbitrary processing is performed on the wafer 200 by the process tube 11. After the processing, the wafer 200 and the pod 110 are discharged to the outside of the casing 111 in the reverse order of the above-described procedure except for the wafer alignment process in the notch aligner 135.

The apparatus 10 shown in FIGS. 3 and 4 includes a vertical process tube 11 that is vertically arranged and supported so that the center line is vertical, and the process tubes 11 are arranged concentrically with each other. The outer tube 12 and the inner tube 13 are comprised.
The outer tube 12 is made of quartz (SiO 2) and is integrally formed in a cylindrical shape with the upper end closed and the lower end opened.
The inner tube 13 is formed in a cylindrical shape whose upper and lower ends are open, and the cylindrical hollow portion of the inner tube 13 substantially includes a processing chamber 14 into which a plurality of wafers held in a long alignment state by a boat are loaded. Forming.
The lower end opening of the inner tube 13 substantially constitutes a furnace port 15 for taking in and out the wafer. Therefore, the inner diameter of the inner tube 13 is set to be larger than the maximum outer diameter (for example, a diameter of 300 mm) of the wafer to be handled.

A lower end portion between the outer tube 12 and the inner tube 13 is hermetically sealed by a manifold 16 constructed in a substantially cylindrical shape. For exchanging the outer tube 12 and the inner tube 13, the manifold 16 is detachably attached to the outer tube 12 and the inner tube 13, respectively.
Since the manifold 16 is supported by the sub-housing 119 of the apparatus 10, the process tube 11 is installed vertically.

The exhaust passage 17 is formed by a gap between the outer tube 12 and the inner tube 13 in a circular ring shape having a constant cross-sectional shape.
As shown in FIG. 3, one end of an exhaust pipe 18 is connected to the upper portion of the side wall of the manifold 16, and the exhaust pipe 18 communicates with the lowermost end portion of the exhaust path 17.
An exhaust device 19 controlled by a pressure controller 21 is connected to the other end of the exhaust pipe 18, and a pressure sensor 20 is connected to the exhaust pipe 18.
The pressure controller 21 is configured to feedback control the exhaust device 19 based on the measurement result from the pressure sensor 20.

A gas introduction pipe 22 is disposed below the manifold 16 so as to communicate with the furnace port 15 of the inner tube 13. The gas introduction pipe 22 includes a raw material gas supply device controlled by a gas flow rate controller 24 and an inert gas. A gas supply device (hereinafter referred to as a supply device) 23 is connected.
The gas introduced into the furnace port 15 by the gas introduction pipe 22 circulates in the processing chamber 14 of the inner tube 13 and is exhausted by the exhaust pipe 18 through the exhaust path 17.

A seal cap 129 that closes the lower end opening is brought into contact with the manifold 16 from the lower side in the vertical direction. The seal cap 129 is constructed in a disk shape substantially equal to the outer diameter of the manifold 16 and is configured to be raised and lowered in the vertical direction by the boat elevator 115 installed in the standby chamber 3 of the housing 2.
The boat elevator 115 is configured by a motor-driven feed screw shaft device, a bellows, and the like, and the motor 27 of the boat elevator 115 is configured to be controlled by a drive controller 28.
A rotation shaft 30 is inserted on the center line of the seal cap 129 and is rotatably supported. The rotation shaft 30 is configured to be rotated by a motor 29 controlled by a drive controller 28.
A boat 31 is vertically supported and supported at the upper end of the rotating shaft 30.

The boat 31 includes a pair of upper and lower end plates 32 and 33, and three holding members 34 that are installed between the end plates 32 and 33. The three holding members 34 have a plurality of holding members 34. The grooves 35 are arranged at equal intervals in the longitudinal direction so as to open facing each other. The boat 31 inserts the wafers 1 between the holding grooves 35 of the three holding members 34, thereby holding the plurality of wafers 1 aligned in a state where their centers are aligned horizontally. .
A heat insulating cap portion 36 is disposed between the boat 31 and the rotating shaft 30.
The rotary shaft 30 is configured so that the lower end of the boat 31 is separated from the position of the furnace port 15 by an appropriate distance by supporting the boat 31 in a state where it is lifted from the upper surface of the seal cap 129.
The heat insulating cap part 36 insulates the vicinity of the furnace port 15.

Outside the process tube 11, a heater unit 40 as a heating means for heating the inside of the processing chamber is disposed concentrically and is installed in a state supported by the sub-housing 119.
The heater unit 40 includes a case 41 made of stainless steel (SUS) and formed in a cylindrical shape with a closed upper end and a lower end opening. The inner diameter and the total length of the case 41 are set larger than the outer diameter and the total length of the outer tube 12. Inside the case 41, a heat insulating tank 42 constructed in a cylindrical shape having a smaller diameter than the case 41 is installed concentrically.
Inside the heat insulating tank 42, a heat insulating side wall 43 formed in a cylindrical shape smaller in diameter than the heat insulating tank 42 is disposed concentrically with a gap between the outer tube 12. The heat insulation side wall 43 is constructed in a single cylindrical body by stacking a plurality of heat insulation blocks 44 formed in a short cylindrical shape in the vertical direction.
A heat insulating ceiling wall 45 is placed on the heat insulating side wall 43 so as to close the upper end opening of the heat insulating side wall 43. The heat insulating ceiling wall 45 is constructed as a single disk by stacking a plurality of heat insulating plates 46 formed in a disk shape having an outer diameter equal to the inner diameter of the case 41 in the vertical direction.

  A heat generating element (hereinafter referred to as a side wall heat generating element) 47 is laid on each heat insulating block 44 on the inner peripheral surface of the heat insulating side wall 43.

A sub-heater unit 48 is horizontally installed at the center of the lower surface of the heat insulating ceiling wall 45 that is the ceiling surface of the heater unit 40.
The sub-heater unit 48 includes a ceiling heating element 49 and a holder 50, and the holder 50 that holds the ceiling heating element 49 is suspended from the lower surface of the heat insulating ceiling wall 45.

As shown in FIG. 4, the heating elements of the side wall heating element 47 and the ceiling heating element 49 are connected to a heating element driving device 52, and the heating element driving device 52 is controlled by a temperature controller 53. It is configured.
A plurality of thermocouples 54 are arranged on the side wall portion of the heater unit 40 at intervals in the vertical direction and are inserted in the radial direction. The thermocouple 54 transmits the measurement result to the temperature controller 53. It has become.
The temperature controller 53 performs feedback control of the heating element driving device 52 based on the measured temperature from the thermocouple 54. That is, the temperature controller 53 obtains an error between the target temperature of the heating element driving device 52 and the measured temperature of the thermocouple 54, and if there is an error, executes a feedback control for eliminating the error.
Furthermore, the temperature controller 53 is configured to perform zone control on the side wall heating element 47.

A cooling air passage 61 is formed between the heater unit 40 and the process tube 11 as a space formed between the processing chamber 14 and the heater unit (heating means). The cooling air passage 61 is formed to circulate cooling air as a cooling gas as a whole.
An air supply duct 62 is laid in an annular shape at the lower end of the heat insulating side wall 43 of the heater unit 40, and a plurality of air outlets 63 are arranged in the air supply duct 62 and the heat insulating side wall 43 at substantially equal intervals in the circumferential direction. There are also several in the radial and vertical directions.
An air supply pipe 64 for supplying cooling air is connected to the outer peripheral side of the air supply duct 62, and the cooling air supplied to the air supply pipe 64 is diffused throughout the cooling air passage 61 through the air supply duct 62 and the air outlet 63. It is supposed to be.

  Exhaust holes 65 as a part of the exhaust flow path for exhausting the atmosphere of the cooling air passage 61 are formed in the heat insulating ceiling wall 45 so as to be arranged at substantially equal intervals in the circumferential direction on the same circular line so as to penetrate in the vertical direction. Has been.

As shown in FIG. 3, the heat insulating ceiling wall 45 is covered with an exhaust hood 70 that constitutes a part of the first exhaust passage together with the exhaust holes 65.
The exhaust hood 70 is provided with a casing 71 made of a stainless steel plate and assembled into a polygonal (octagonal) box shape.

  A damper case 90 that constitutes a part of the first exhaust passage together with the exhaust duct 76 and the exhaust hood 70 is connected to an end (downstream end) opposite to the exhaust hood 70 of the exhaust duct 76. The damper case 90 is formed in a rectangular parallelepiped box shape in plan view.

  As shown in FIG. 3, a radiator case 300 that constitutes a first exhaust passage together with the exhaust duct 76 and the damper case 90 is connected to the damper case 90. The radiator case 300 is formed in a rectangular parallelepiped box shape in plan view.

  In the radiator case 300, a radiator is installed as a cooling means. The upstream end, which is the connection side end of the radiator case 300 with the damper case 90, constitutes a supply port for supplying hot exhaust (hereinafter sometimes referred to as high temperature gas) as a gas to be cooled to the radiator. . The end of the radiator case 300 opposite to the end connected to the damper case 90 (downstream end) constitutes an exhaust port for discharging the heat exhaust (hereinafter sometimes referred to as low temperature gas) cooled by the radiator. ing. An exhaust duct 106 constituting a second exhaust passage connected to the radiator is connected to an exhaust port of the radiator case 300. The exhaust duct 106 is connected to an exhaust device such as a blower, a pump, and an ejector.

The temperature in the process tube 11 is raised from 600 ° C. to a film forming temperature of 730 ° C. to 800 ° C., for example, 760 ° C. (Ramp
Up) When the wafer temperature reaches the film formation temperature and stabilizes (Pre Heat), the reaction gas is introduced into the reaction furnace 1 through the gas introduction pipe 22, and the film formation process is performed on the wafer 200 (Depo). For example, when a Si3N4 film (silicon nitride film, hereinafter referred to as SiN) is formed on the wafer 200, a gas such as DCS (dichlorosilane (SiH2Cl2)), NH3, or the like is used. In this case, the process tube 11 is maintained at a film forming temperature of 730 ° C. to 800 ° C.

  The process tube 11 maintained at 730 ° C. to 800 ° C. and the outside of the process tube 11 are thermally insulated by each heat insulating portion (the heat insulating tank 42, the heat insulating side wall 43, the heat insulating ceiling wall 45, the heat insulating block 44, the heat insulating cap portion 36). However, each heat insulation part is hot. In order to cool these heat insulation units and the devices provided around each heat insulation unit, as shown in FIG. 5, a radiator cooling unit 501, a case ceiling wall cooling unit 502, a case side wall cooling unit 503, a furnace A mouth cooling unit 504 is provided. Further, a flow meter 505 for monitoring the flow rate of the cooling water to these cooling units is provided, and a heat transfer unit 506 for transferring heat to the cooling water discharged from the supplied cooling water is provided. It is provided below the processing device.

  As shown in FIG. 5, the radiator cooling unit 501 is provided in the radiator case 300 and configured to cool the radiator case 300.

  The casing ceiling wall cooling unit 502 is provided on the heat insulating ceiling wall 45 provided in the casing 111 and configured to cool the heat insulating ceiling wall 45.

  The case side wall cooling unit 503 is provided on the heat insulating side wall 43 provided in the case 111 and configured to cool the heat insulating side wall 43.

  As shown in FIGS. 3 and 4, the furnace port cooling unit 504 is provided so as to be adjacent to the lower end of the process tube 11 and the manifold 16, and is configured to cool the lower end of the process tube 11 and the manifold 16.

  As shown in FIG. 6, the cooling water is supplied from the cooling water supply port 515 to each cooling unit (a radiator cooling unit 501, a casing ceiling wall cooling unit 502, a casing side wall cooling unit 503, and a furnace port cooling unit 504). , The heat of each cooling part is absorbed, and after passing through the flow meter 505, it flows to the cooling water discharge port 516.

  The cooling water is at a room temperature at the cooling water supply port 515, and at the cooling water discharge port 516, the water that has absorbed the heat of each cooling part flows into the cooling water, and thus the cooling water has a high temperature. The difference between the temperature of the cooling water flowing through the cooling water supply port 515 and the temperature of the cooling water flowing through the cooling water discharge port 516 varies greatly depending on the operation status of the processing apparatus.

  As shown in FIG. 7, the heat transfer unit 506 is provided with a cooling water supply port 515 and a cooling water discharge port 516, and each of the cooling water supply port 515 and the cooling water discharge port 516 has a Peltier element 513. The heat of the cooling water supplied to the cooling water supply port 515 is transmitted to the cooling water discharge port 516 via the heat conductor 512 and the Peltier element 513. It is possible. Further, the heat conductor 512, the Peltier element 513, the cooling water supply port 515 and the cooling water discharge port 516 are covered with a heat insulating material 511.

  By using a material having high thermal conductivity, such as aluminum, for the heat conductor 512, heat transfer from the cooling water supply port 515 to the cooling water discharge port 516 can be promoted.

  As shown in FIG. 8, the Peltier element 513 is plate-shaped and includes a heat absorbing surface 521 and a heat radiating surface 522, and power is supplied from the electrodes 514a and 514b to the heat radiating surface 522. It is configured to move heat.

  In order to control the cooling performance of each cooling unit, power supply to the Peltier element 513 is performed constantly, intermittently, or temporarily. For example, when the temperature of the cooling water flowing through the cooling water supply port 515 is higher than room temperature, or when the temperature of the water flowing through the cooling water discharge port 16 is higher than the temperature at the time of idling of the processing apparatus, it is always or intermittently. Make it work. Further, when the cooling performance is temporarily insufficient due to a specific operation at the time of operation of the processing apparatus, the operation is performed according to that.

  The cooling performance of each cooling unit can be controlled by the voltage and current supplied to the Peltier element 513.

  Control of the cooling performance of each cooling unit is feedback-controlled for the temperature of the cooling water flowing through the cooling water supply port 515, the temperature of the cooling water flowing through the cooling water discharge port 516, or both. That is, when the water temperature of the cooling water supply port 515 is lower than the room temperature, each part can be cooled without operating the Peltier element 513. Therefore, the operation frequency of the Peltier element 513 is reduced, and the water temperature of the cooling water supply port 515 is reduced. When the temperature is higher than the room temperature, there is a possibility that each part cannot be sufficiently cooled, so that the operation frequency of the Peltier element 513 is increased. Further, when the water temperature of the cooling water discharge port 516 is higher than the room temperature, there is a possibility that each part cannot be cooled. Therefore, the operation frequency of the Peltier element 513 is increased, and the water temperature of the cooling water discharge port 516 is the temperature when the processing apparatus is idle. If it is lower than this, each part is overcooled, so that the operation frequency of the Peltier element 513 is controlled to be low.

  If the temperature difference between the temperature of the cooling water supplied to the cooling water supply port 516 and the cooling water discharged from the cooling water discharge port 516 is large, the heat transfer performance of the Peltier element 513 is reduced. By stacking, the temperature difference per Peltier element 513 can be reduced, and heat can be sufficiently transferred even when the cooling water discharged from the cooling water discharge port 516 reaches a high temperature.

(2) Effects according to the present embodiment According to the present embodiment, the following one or more effects are achieved.

(A) According to the present embodiment, the temperature of the cooling water supplied to the radiator cooling unit 501 for absorbing heat from the radiator case 300 can be lowered, and the radiator is used without increasing the amount of cooling water used. The cooling performance of the cooling unit 501 can be improved. Moreover, since the margin is increased, the amount of cooling water used can be reduced.

(B) According to the present embodiment, the temperature of the cooling water supplied to the casing ceiling wall cooling unit 502 for absorbing heat from the heat insulating ceiling wall 45 can be lowered, and the amount of cooling water used is increased. Without this, the cooling performance of the casing ceiling wall cooling unit 502 can be improved. Moreover, since the margin is increased, the amount of cooling water used can be reduced.

(C) According to the present embodiment, the temperature of the cooling water supplied to the casing side wall cooling unit 503 for absorbing heat from the heat insulating side wall 43 can be lowered, and the amount of cooling water used is not increased. In addition, the cooling performance of the casing side wall cooling unit 503 can be improved. Moreover, since the margin is increased, the amount of cooling water used can be reduced.

(D) According to the present embodiment, the temperature of the cooling water supplied to the furnace port cooling unit 504 for absorbing heat from the lower end of the process tube 11 and the manifold 16 can be lowered, and the amount of cooling water used can be reduced. The cooling performance of the furnace port cooling unit 504 can be improved without increasing the temperature. Moreover, since the margin is increased, the amount of cooling water used can be reduced.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

<Appendix 1>
According to one aspect of the invention,
A processing chamber for processing the substrate;
A heating unit for heating the processing chamber;
A cooling unit provided outside the processing chamber, provided with at least one cooling unit for cooling the processing chamber and the equipment outside the processing chamber;
A heat transfer unit that heat-transfers the heat of the refrigerant supplied to the cooling unit to the refrigerant discharged from the cooling unit;
A substrate processing apparatus is provided.

<Appendix 2>
Preferably,
The heat transfer unit is provided with a Peltier element.

<Appendix 3>
Also preferably,
The refrigerant is water.

<Appendix 4>
According to another aspect of the invention,
A step of carrying the substrate into a processing chamber for processing the substrate;
A heating unit heating the processing chamber;
A step of cooling at least one cooling unit provided in the processing chamber and an apparatus provided outside the processing chamber;
A step of moving the heat of the refrigerant supplied to the cooling unit to the refrigerant heated by the cooling unit and discharged;
A method of manufacturing a semiconductor device having the above is provided.

DESCRIPTION OF SYMBOLS 10 Apparatus 11 Process tube 12 Outer tube 13 Inner tube 14 Processing chamber 15 Furnace port 16 Manifold 17 Exhaust path 18 Exhaust pipe 19 Exhaust device 20 Pressure sensor 21 Pressure controller 22 Gas introduction pipe 27 Motor 28 Drive controller 29 Motor 30 Rotating shaft 32 End Plate 33 End plate 34 Holding member 35 Holding groove 36 Heat insulation cap part 40 Heater unit 41 Case 42 Heat insulation tank 43 Heat insulation side wall 44 Heat insulation block 45 Heat insulation ceiling wall 46 Heat insulation plate 47 Heating element 48 Sub heater unit 49 Ceiling heating element 50 Holder 52 Heat generation Body drive device 53 Temperature controller 54 Thermocouple 61 Cooling air passage 62 Air supply duct 63 Air outlet 64 Air supply pipe 65 Exhaust hole 70 Exhaust hood 76 Exhaust duct 90 Damper case 100 Processing device 10 Front maintenance port 104 Front maintenance door 105 Rotary pod shelf 106 Exhaust duct 110 Pod 111 Housing 111a Front wall 112 Pod loading / unloading port 113 Front shutter 114 Load port 115 Boat elevator 116 Post 117 117 Shelf plate 118 Pod conveyor 118a Pod elevator 118b Pod transfer mechanism 119 Sub-housing 119a Front wall 120 Wafer loading / unloading port 121 Pod opener 122 Mounting table 123 Cap attaching / detaching mechanism 124 Transfer chamber 125 Wafer transfer mechanism 125a Wafer transfer device 125b Wafer transfer device elevator 125c Tweezer 126 Standby unit 128 Arm 129 Seal cap 133 Clean air 134 Clean unit 135 Notch aligning device 147 Furnace port shutter 200 Wafer 217 Boat 300 Radiator case 501 Radiator cooling unit 502 Housing ceiling wall cooling unit 503 Housing side wall cooling unit 504 Furnace port cooling unit 505 Flow meter 506 Heat transfer unit 511 Heat insulating material 512 Thermal conductor 513 Peltier element 514a Electrode 514b Electrode 515 Cooling water supply port 516 Cooling water discharge port 521 Heat absorption surface 522 Heat radiation surface 600 Controller

Claims (1)

A processing chamber for processing the substrate;
A heating unit for heating the processing chamber;
A cooling unit provided outside the processing chamber, provided with at least one cooling unit for cooling the processing chamber and the equipment outside the processing chamber;
A heat transfer unit that heat-transfers the heat of the refrigerant supplied to the cooling unit to the refrigerant discharged from the cooling unit;
A substrate processing apparatus.