JP2012080383A - Electronic component, method of manufacturing electronic component, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component capable being further miniaturized, an electronic apparatus having the electronic component, and a method of manufacturing the electronic component.SOLUTION: A quartz oscillator 1 includes a quartz vibrating reed 10 having extraction electrodes 15a, 16a, and a package base 21 having bump electrodes 24, 25. The quartz vibrating reed 10 is mounted on the package base 21 via the bump electrodes 24, 25 and the extraction electrodes 15a, 16a. The bump electrodes 24, 25 have resin projections 24a, 25a shaped to project toward the quartz vibrating reed 10 from a support surface 23 of the package base 21 and shaped to bulge in the direction of extension of the support surface 23 of the package base 21, and conductive coatings 24b, 25b covering surfaces of the resin projections 24a, 25a. The extraction electrodes 15a, 16a are directly joined to the bump electrodes 24, 25.

Description

  The present invention relates to an electronic component, a method for manufacturing the electronic component, and an electronic apparatus including the electronic component.

Conventionally, it has a functional piece having a predetermined function, a bump electrode formed on the functional piece, a connection electrode connected to the bump electrode, and a holding portion for holding a conductive contact state between the bump electrode and the connection electrode An electronic component is known in which a bump electrode has a core part having elasticity and a conductive film provided on the surface of the core part, and the conductive film and the connection electrode are in conductive contact by elastic deformation of the core part. (For example, refer to Patent Document 1).
Also known is an electronic component (electronic component mounting structure) in which the holding portion (second resin protrusion) is disposed inside the annular bump electrode (first resin protrusion) in plan view. (For example, refer to Patent Document 2).

JP 2010-63154 A JP 2010-81308 A

The electronic component having the above-described configuration is disposed in the vicinity of the bump electrode that is in conductive contact with the connection electrode, and a holding unit that holds the conductive contact state between the connection electrode and the bump electrode is an essential constituent requirement.
As a result, in the electronic component having the above-described configuration, the space for providing the holding portion is an impediment to further miniaturization.
Moreover, since it is common for an electronic component having the above-described configuration to use an adhesive as a holding portion, an adhesive application step that is difficult to work with is required, or the adhesive is cured. Therefore, there is a possibility that productivity may decrease due to the necessity of heating and cooling processes for the purpose.
Further, in the electronic component having the above-described configuration, for example, gas is generated from the adhesive as the holding portion due to heating when being mounted on the electronic device, and the vibration characteristics of the functional piece may be deteriorated.
In addition, the electronic component configured as described above, by curing the adhesive of the holding part, suppresses the elasticity of the bump electrode and holds the conductive contact state between the connection electrode and the bump electrode. For example, the impact force applied at the time of impact such as dropping may not be sufficiently absorbed and relaxed by the bump electrode.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 An electronic component according to this application example includes a vibrating piece having a connection electrode and a substrate having a bump electrode, and the vibrating piece is attached to the substrate via the bump electrode and the connection electrode. The bump electrode has a shape protruding from the main surface of the substrate toward the vibrating piece side, and is rounded in a convex shape toward the spreading direction of the main surface of the substrate. It has a resin-made resin protrusion having a shape and a conductive film covering the surface of the resin protrusion, and the connection electrode and the bump electrode are directly bonded.

According to this, in the electronic component, since the connection electrode of the vibration piece (functional piece) and the bump electrode of the substrate are directly joined, the conductive contact state between the connection electrode and the bump electrode as in the conventional case is reduced. The holding part to hold becomes unnecessary.
As a result, since the electronic component does not require a space for providing the holding portion, it is possible to further reduce the size.
In addition, it is possible to improve the productivity of electronic components because there is no need for a conventional adhesive application process as a holding part and no heating and cooling processes to cure the adhesive. It becomes.
In addition, since an electronic component does not require a holding portion, there is no possibility that gas is generated from the joint portion between the connection electrode and the bump electrode even when heated when mounted on an electronic device. Deterioration of the vibration characteristics of the piece can be avoided. In the electronic component, the leakage of gas from the resin protrusion in the bump electrode during the heating is avoided by the conductive film (conductive film) covering the surface of the resin protrusion (core portion).
In addition, since the electronic component does not have a holding portion that suppresses the elasticity of the bump electrode, for example, the impact force applied to the joint portion between the connection electrode and the bump electrode is affected by the elasticity of the bump electrode during an impact such as dropping. Absorption and relaxation are ensured, and impact resistance can be improved.

  Application Example 2 In the electronic component according to the application example, the bump electrode includes a drum-shaped curved surface in the thickness direction of the substrate, and the conductive coating is directed upward of the substrate along the resin protrusion. The rising start point is directed toward the spreading direction of the main surface of the substrate so that the tangent line that contacts the conductive coating is located closer to the center side of the bump electrode than the tangent line orthogonal to the main surface of the substrate. It is preferable to have a rounded shape.

According to this, in the electronic component, the intermediate portion in the thickness direction of the bump electrode protrudes to the outside in the form of a drum drum-shaped curved surface.
As a result, for example, the impact force applied at the time of impact such as dropping is distributed substantially uniformly without the concentration of the impact force applied to a specific portion of the bump electrode (for example, the interface between the resin protrusion and the substrate surface) ( Therefore, the impact resistance performance can be further improved. In particular, the peeling of the resin protrusion from the vicinity of the interface with the substrate surface can be reduced.

  Application Example 3 In the electronic component according to the application example described above, the connection electrode and the conductive film include any one of the same kind of metals of Au, Cu, Al, and stainless steel, and the connection electrode and the bump It is preferable that the electrode is directly joined by the same metal.

  According to this, in the electronic component, the connection electrode and the conductive coating include one of the same kind of metals of Au, Cu, Al, and stainless steel, and the connection electrode and the bump electrode are directly bonded by the same kind of metal. Therefore, both can be stably and surely directly joined by using a general-purpose metal of the same kind.

  Application Example 4 An electronic device according to this application example includes the electronic component according to any one of the application examples described above.

  According to this, since the electronic device includes the electronic component described in any of the application examples, it is possible to provide an electronic device that exhibits the effects described in any of the application examples.

  Application Example 5 An electronic component manufacturing method according to this application example includes a step of preparing a resonator element having a connection electrode, a resin protrusion protruding from the main surface of the substrate toward the resonator element, and a surface of the resin protrusion. A bump electrode having a conductive film to cover, the step of preparing the substrate including the bump electrode, wherein the conductive film includes the same element as the metal film of the connection electrode; and The bump electrode is subjected to a surface activation process, and the connection electrode of the resonator element and the bump electrode subjected to the surface activation process of the substrate are opposed to each other so that the connection electrode and the bump electrode are at room temperature. And pressing to directly join the connection electrode and the bump electrode.

According to this, since the manufacturing method of the electronic component presses the connection electrode of the resonator element and the bump electrode subjected to the surface activation treatment of the substrate at room temperature and directly joins the connection electrode and the bump electrode, An electronic component having the effects described in the application example can be provided.
In addition, the electronic component manufacturing method performs direct bonding between the connection electrode and the bump electrode at room temperature, which eliminates the need for steps such as heating and cooling associated with direct bonding, and improves productivity. Become.
In addition, the normal temperature here is a standard temperature including the range of 20 ° C. ± 15 ° C. (5 ° C. to 35 ° C.) stipulated in Japanese Industrial Standard (JIS Z 8703) (particularly neither cooling nor heating) Temperature).

  Application Example 6 In the electronic component manufacturing method according to the application example described above, it is preferable that the method further includes a step of surface activating the connection electrode of the vibrating piece.

  According to this, since the manufacturing method of the electronic component further includes the step of surface activating the connection electrode of the resonator element, the direct connection between the connection electrode and the bump electrode can be more reliably performed.

  Application Example 7 An electronic component according to this application example includes a vibration device having a connection electrode and a substrate having a bump electrode, and the connection electrode is positioned on the substrate so that the connection electrode is positioned on the bump electrode. A vibration device is mounted, and the bump electrode has a shape protruding from the main surface of the substrate toward the vibration device side, and is rounded in a convex shape toward the spreading direction of the main surface of the substrate. A resinous resin protrusion having a tinged shape and a conductive film covering the surface of the resin protrusion, wherein the connection electrode and the bump electrode are directly bonded. .

According to this, since the connection electrode of the vibration device and the bump electrode of the substrate are directly bonded to each other, the electronic component is added to the connection portion between the connection electrode and the bump electrode at the time of impact such as dropping. The impact force is reliably absorbed and relaxed by the elasticity of the bump electrode, and the impact resistance performance can be improved.
In addition, in electronic components, distortion (for example, thermal stress) generated at the joint between the connection electrode and the bump electrode is absorbed and alleviated by elastic deformation of the bump electrode. Adverse effects can be suppressed.
In addition, since the connection electrode of the vibration device and the bump electrode of the substrate are directly bonded to each other in the electronic component, for example, it is possible to reduce the area required for bonding compared to bonding of both by solder, Further downsizing can be achieved.

  Application Example 8 In the electronic component according to Application Example 7, the bump electrode has a drum-shaped curved surface in the thickness direction of the substrate, and extends above the substrate along the resin protrusion of the conductive coating. The starting point, which is the rising edge, is directed toward the spreading direction of the main surface of the substrate such that the tangent line in contact with the conductive film is located closer to the center of the bump electrode than the tangent line orthogonal to the main surface of the substrate. It is preferable to have a rounded shape.

According to this, the electronic component includes a bump electrode shaped like a drum drum, with a middle portion in the thickness direction of the bump electrode protruding to the outside in a curved shape.
As a result, in the electronic component, the impact force applied at the time of impact such as dropping does not concentrate on a specific portion of the bump electrode (for example, the interface between the resin protrusion and the substrate surface), but is distributed almost uniformly (stress concentration). Therefore, the impact resistance can be further improved. In particular, the peeling of the resin protrusion from the vicinity of the interface with the substrate surface can be reduced.
In addition, in electronic components, distortion (for example, thermal stress) generated at the joint between the connection electrode and the bump electrode is more easily absorbed and relaxed by the shape of the bump electrode. It is possible to further suppress the adverse effect on.

  [Application Example 9] In the electronic component according to Application Example 7 or Application Example 8, the connection electrode and the conductive film include any one of the same kind of metals of Au, Cu, Al, and stainless steel. It is preferable that the connection electrode and the bump electrode are directly joined by the same kind of metals.

  According to this, in the electronic component, the connection electrode and the conductive coating include one of the same kind of metals of Au, Cu, Al, and stainless steel, and the connection electrode and the bump electrode are directly bonded by the same kind of metal. Therefore, both can be stably and surely directly joined by using a general-purpose metal of the same kind.

  Application Example 10 An electronic apparatus according to this application example includes the electronic component according to any one of Application Examples 7 to 9.

  According to this, since the electronic device includes the electronic component according to any one of Application Example 7 to Application Example 9, the electronic device having the effect according to any one of Application Example 7 to Application Example 9 described above. Can be provided.

It is a schematic diagram which shows schematic structure of the crystal oscillator of 1st Embodiment, (a) is the top view seen from the lid side, (b) is sectional drawing of (a). The model enlarged view of the principal part of FIG.1 (b). 3 is a flowchart showing a manufacturing process of the crystal unit of the first embodiment. (A)-(e) is a schematic cross section explaining the outline of the manufacturing method of a bump electrode. The schematic diagram explaining a surface activation treatment process. (A)-(c) is a schematic cross section explaining a joining process. The schematic cross section explaining a sealing process. (A)-(d) is a model perspective view which shows the variation of the shape of the bump electrode in the crystal oscillator of a modification. The model perspective view which shows the mobile telephone of 2nd Embodiment. It is a schematic diagram which shows schematic structure of the pressure sensor module of 3rd Embodiment, (a) is the top view seen from the diaphragm layer side, (b) is sectional drawing of (a). The model expanded sectional view of the principal part of Drawing 10 (a).

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings.

(First embodiment)
Here, a crystal resonator will be described as an example of an electronic component.
FIG. 1 is a schematic diagram illustrating a schematic configuration of the crystal resonator according to the first embodiment. Fig.1 (a) is a top view seen from the lid (lid body) side, FIG.1 (b) is sectional drawing in the AA of Fig.1 (a). FIG. 2 is a schematic enlarged view of a portion B in FIG. In the plan view, the lid is omitted for convenience.

As shown in FIGS. 1 and 2, the crystal resonator 1 includes a crystal resonator element 10 as a resonator element and a package 20 that houses the crystal resonator element 10.
The quartz crystal resonator element 10 is an AT-cut type cut out from a quartz crystal or the like at a predetermined angle, has a planar shape formed in a substantially rectangular shape, and a base part connected to the vibrator 11 for thickness-shear vibration. 12.

In the quartz crystal resonator element 10, lead electrodes 15 a and 16 a as connection electrodes that are drawn from excitation electrodes 15 and 16 formed on one main surface 13 and the other main surface 14 of the vibration portion 11 are formed on the base 12. Has been.
The lead electrode 15 a is drawn from the excitation electrode 15 on one main surface 13 to the base portion 12 along the longitudinal direction (left and right direction on the paper surface) of the crystal vibrating piece 10, and to the other main surface 14 along the side surface of the base portion 12. It wraps around and extends to the vicinity of the excitation electrode 16 on the other main surface 14.
The lead electrode 16 a is drawn from the excitation electrode 16 on the other main surface 14 to the base portion 12 along the longitudinal direction of the quartz crystal vibrating piece 10, wraps around one main surface 13 along the side surface of the base portion 12, and The surface 13 extends to the vicinity of the excitation electrode 15.
The excitation electrodes 15 and 16 and the extraction electrodes 15a and 16a are metal films having a structure in which Cr is a base layer and Au is laminated thereon.

The package 20 has a substantially rectangular and flat plate-shaped package base 21 as a substrate and a cap-shaped lid 22 that covers the package base 21 and is formed in a substantially rectangular parallelepiped shape.
The package base 21 is made of an aluminum oxide sintered body, crystal, glass, silicon, or the like formed by firing a ceramic green sheet.
The lid 22 is made of the same material as the package base 21 or a metal such as Kovar, 42 alloy, or stainless steel.

The package base 21 is provided with bump electrodes 24 and 25 on a support surface 23 that supports the crystal resonator element 10 as a main surface.
The bump electrodes 24 and 25 have a shape projecting from the support surface 23 of the package base 21 toward the crystal vibrating piece 10 and have elastic resin projections 24a and 25a and surfaces of the resin projections 24a and 25a. And conductive films 24b and 25b covering the surface.
The resin protrusions 24a and 25a of the bump electrodes 24 and 25 are formed so as to project in a hemispherical shape at a position facing the lead electrodes 15a and 16a of the crystal vibrating piece 10 (shape before bonding to the crystal vibrating piece 10).
The conductive films 24b and 25b of the bump electrodes 24 and 25 cover the resin protrusions 24a and 25a and extend to the support surface 23, and the planar shape is formed in a substantially rectangular shape.

The resin protrusions 24a and 25a are formed by coating an elastic resin material such as polyimide on the support surface 23 and performing a patterning process such as photolithography.
In addition to the polyimide resin, the resin protrusions 24a and 25a are made of silicone modified polyimide resin, epoxy resin, silicone modified epoxy resin, acrylic resin, phenol resin, silicone resin, modified polyimide resin, benzocyclobutene, polybenzoxazole. You may use resin, such as.

Conductive coatings 24b and 25b formed on the surfaces of the resin protrusions 24a and 25a are vapor-deposited conductive metals such as Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, and lead-free solder. The film is formed by sputtering or the like, and an appropriate patterning process is applied.
In addition, the conductive coatings 24b and 25b can further improve the conductive performance by further coating the surface of the underlying coating made of Cu, Ni, Al or the like with Au plating or the like.
In this embodiment, the surfaces of the conductive coatings 24b and 25b are Au coatings.
As a result, the lead electrodes 15a and 16a of the crystal vibrating piece 10 and the bump electrodes 24 and 25 of the package base 21 contain the same element (here, Au).

A pair of external terminals 27 and 28 used for mounting on an electronic device or the like are formed on the bottom surface (surface opposite to the support surface 23) 26 of the package base 21.
The external terminals 27 and 28 are made of a metal film in which a film such as Ni or Au is laminated on a metallized layer such as W by plating.
The external terminals 27 and 28 are connected to the bump electrodes 24 and 25 by internal wiring (not shown). For example, the external terminal 27 is connected to the bump electrode 24, and the external terminal 28 is connected to the bump electrode 25.

In the crystal resonator 1, the crystal resonator element 10 is placed on the support surface 23 of the package base 21 via the bump electrodes 24 and 25 and the lead electrodes 15 a and 16 a.
The quartz resonator 1 includes lead electrodes 15a and 16a formed on the base 12 of the quartz vibrating piece 10, and bump electrodes 24 and 25 in which the surfaces of the conductive films 24b and 25b are activated by irradiation with an argon beam or the like. However, when the crystal vibrating piece 10 and the package base 21 are pressed in a direction approaching each other in the aligned state, they are directly joined to each other. (As a principle of direct bonding, it is considered that bonding is performed by directly bonding bonds of Au atoms on the surface).
In the crystal resonator 1, the extraction electrodes 15 a and 16 a and the bump electrodes 24 and 25 are electrically and mechanically joined by this direct joining.

As shown in FIG. 2, the bump electrodes 24 and 25 are slightly plastically deformed by the pressing and are crushed in the thickness direction.
The bump electrodes 24 and 25 are provided with a drum-shaped curved surface in the thickness direction of the package base 21. More specifically, the bump electrodes 24 and 25 are formed on the outer side where the conductive coatings 24b and 25b rise from the support surface 23 of the package base 21 upward (toward the quartz crystal vibrating piece 10) along the resin protrusions 24a and 25a. The support surface 23 of the package base 21 is positioned so that the starting point P is located on the center side of the bump electrodes 24 and 25 with respect to the tangent line S perpendicular to the support surface 23 of the package base 21 among the tangent lines in contact with the conductive coatings 24b and 25b. A convex rounded shape is provided toward the spreading direction of the bump electrode 24, and preferably the convex rounded shape is formed over the entire circumference in the width direction of the bump electrodes 24 and 25.
In other words, the distance L1 from the radial center line O to the starting point P in the resin protrusions 24a and 25a of the bump electrodes 24 and 25 is shorter than the distance L2 from the center line O to the tangent S.
In other words, the bump electrodes 24 and 25 have a middle portion in the thickness direction (up and down direction on the paper) protruding directly to the outside in a drum drum-shaped curved surface by direct bonding.
2 indicates a cross-sectional shape (substantially semicircular shape) before the bump electrodes 24 and 25 are joined.

Returning to FIG. 1, in the crystal resonator 1, the package base 21 is covered with the lid 22 in a state where the crystal resonator element 10 is bonded (supported) to the support surface 23 of the package base 21 via the bump electrodes 24 and 25. The package base 21 and the lid 22 are joined by a seam ring, low-melting glass, adhesive, or the like (not shown), so that the interior of the package 20 is hermetically sealed.
Note that the inside of the package 20 is in a vacuum state (high vacuum state) or in a state filled with an inert gas such as nitrogen, helium, or argon.
Details of the manufacturing method will be described later.

  In the crystal resonator 1, the crystal resonator element 10 is excited by a drive signal applied from the outside via the external terminals 27 and 28, the bump electrodes 24 and 25, the extraction electrodes 15 a and 16 a, and the excitation electrodes 15 and 16. Resonates at a predetermined frequency.

Here, an example of a manufacturing method of the crystal unit 1 will be described.
FIG. 3 is a flowchart showing the manufacturing process of the crystal unit, and FIGS. 4 to 7 are schematic diagrams for explaining the main manufacturing process (see also FIG. 1).

  As shown in FIG. 3, the manufacturing method of the crystal resonator 1 includes a crystal resonator element preparation step S1, a package base preparation step S2, a surface activation treatment step S3, a bonding step S4, a sealing step S5, have.

[Quartz vibrating piece preparation step S1]
First, a quartz crystal vibrating piece 10 (see FIG. 1) having extraction electrodes 15 a and 16 a drawn from excitation electrodes 15 and 16 formed on one main surface 13 and the other main surface 14 of the vibration portion 11 in the base portion 12. prepare.

[Package base preparation step S2]
Next, a package base 21 (see FIG. 1) including bump electrodes 24 and 25 is prepared on the support surface 23 that supports the crystal vibrating piece 10.
Here, an outline of a method for manufacturing the bump electrodes 24 and 25 will be described.

First, as shown in FIG. 4A, the elastic resin material 30 such as polyimide described above is applied (coated) to the support surface 23 of the package base 21 by spin coating, printing, or the like.
Next, as shown in FIG. 4B, exposure and development processing are performed using a photomask 40 in which openings 41 corresponding to the resin protrusions 24a and 25a of the bump electrodes 24 and 25 are formed.
As a result, as shown in FIG. 4C, columnar resin protrusions 24 a ′ and 25 a ′ having a substantially rectangular cross section are formed on the support surface 23 of the package base 21.

  Next, as shown in FIG. 4D, the package base 21 is put into a heating furnace (not shown) and heated to melt the resin protrusions 24a ′ and 25a ′, so that the cross-sectional shape is substantially semicircular. Hemispherical resin protrusions 24a and 25a are formed.

Next, as shown in FIG. 4 (e), a conductive metal such as Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, lead-free solder is covered so as to cover the resin protrusions 24a and 25a. The conductive films 24b and 25b are formed by applying a patterning process such as photolithography by forming a film by vapor deposition or sputtering.
Here, the surfaces of the conductive coatings 24b and 25b are Au coatings.
Through the above steps, bump electrodes 24 and 25 are formed.
Note that the cross-sectional position in FIG. 4 conforms to the cross-sectional position in FIG.

[Surface activation treatment step S3]
Next, as shown in FIG. 5, the package base 21 is placed on the stage 52 in the vacuum chamber 51 of the surface activation device 50. At this time, the package base 21 is placed so that the bottom surface 26 is on the placement surface 53 side of the stage 52.
Next, the inside of the vacuum chamber 51 is depressurized to about 10 ⁻³ torr by a vacuum pump (not shown).
Next, an ion beam (argon beam) of an inert gas such as argon is irradiated by the ion beam irradiation device 54 toward the support surface 23 of the package base 21 and the bump electrodes 24 and 25 for about 10 seconds to 30 seconds.
As a result, the support surface 23 of the package base 21 and the conductive coatings 24b and 25b of the bump electrodes 24 and 25 are sputter-etched to remove the surface oxide film, adsorbed moisture, organic molecules, etc., and the surface is activated. (Surface atoms are likely to bind to surrounding atoms.)
At this time, the support surface 23 of the package base 21 may be partially masked, and only the bump electrodes 24 and 25 (conductive films 24b and 25b) may be irradiated with an argon beam.

In the surface activation processing step S3, the extraction electrodes 15a and 16a of the quartz crystal vibrating piece 10 are irradiated with an argon beam to activate the surfaces of the extraction electrodes 15a and 16a. This is preferable for more reliable joining with 24 and 25.
At this time, it is necessary to mask the excitation electrodes 15 and 16 so as not to irradiate the excitation electrodes 15 and 16 with the argon beam (in order to avoid a frequency change due to the irradiation of the argon beam).

[Jointing step S4]
Next, as shown in FIG. 6A, the crystal vibrating piece 10 is mounted on one side 61 of the bonding apparatus 60, and the bump electrodes 24 and 25 are crystal-vibrated on the other side 62 facing the one side 61. The package base 21 is mounted so as to face the lead electrodes 15a and 16a of the piece 10.
At this time, the quartz crystal vibrating piece 10 is sucked and temporarily fixed to the concave portion 63 on one side 61 of the bonding apparatus 60 using, for example, a suction device (not shown). The package base 21 is also positioned so as not to move.

Next, as shown in FIG. 6B, after the crystal resonator element 10 and the package base 21 are aligned, at room temperature (standard temperature including a range of 20 ° C. ± 15 ° C. (5 ° C. to 35 ° C.)). Then, one side 61 of the bonding apparatus 60 is moved in the direction of arrow D, and the lead electrodes 15a and 16a of the crystal vibrating piece 10 are applied to the bump electrodes 24 and 25 of the package base 21 with a pressing force of about 0.2 N as an example. Press.
As a result, as shown in FIG. 6 (c), a bond Au1 of Au atoms on the surfaces of the extraction electrodes 15a and 16a of the quartz crystal vibrating piece 10 and Au on the surfaces of the conductive films 24b and 25b of the bump electrodes 24 and 25 are obtained. The atom bond Au2 is directly bonded.
That is, the lead electrodes 15a and 16a of the quartz crystal vibrating piece 10 and the bump electrodes 24 and 25 of the package base 21 are directly bonded by the same element (same metal (Au—Au)).

In this manufacturing method, even if the extraction electrodes 15a and 16a of the crystal vibrating piece 10 are not subjected to surface activation treatment, the surface of the extraction electrodes 15a and 16a is oxidized by pressing with a pressing force of about 0.2N. Membranes, adsorbed moisture, organic molecules, etc. are diffused, enabling direct bonding.
Note that the bonding step S4 is preferably performed in a vacuum chamber with reduced pressure in order to avoid the influence of the atmosphere and perform reliable bonding.
Note that the cross-sectional position in FIG. 6 conforms to the cross-sectional position in FIG.

[Sealing step S5]
Next, as shown in FIG. 7, the lid 22 is attached to the package base 21 in a seam ring (not shown), low-melting-point glass, adhesive in an atmosphere of an inert gas such as nitrogen, helium, or argon, or in a vacuum chamber that is decompressed. Join hermetically using an agent.
Thereby, the internal space surrounded by the package base 21 and the lid 22 is hermetically sealed in a vacuum state (high vacuum state) or in a state filled with an inert gas such as nitrogen, helium, or argon. .
Note that the cross-sectional position in FIG. 7 conforms to the cross-sectional position in FIG.

Through the above steps, a crystal resonator 1 as shown in FIG. 1 is obtained.
Note that the order of the above steps may be changed as necessary. For example, the crystal vibrating piece preparation step S1 may be after the package base preparation step S2, or after the surface activation processing step S3 if the lead electrodes 15a and 16a of the crystal vibrating piece 10 are not subjected to surface activation processing. .
In addition, description of processes, such as frequency adjustment and a test | inspection, is abbreviate | omitted.

As described above, in the crystal resonator 1 according to the first embodiment, the extraction electrodes 15a and 16a of the crystal resonator element 10 and the bump electrodes 24 and 25 of the package base 21 are directly bonded by the same metal (Au). Therefore, a conventional holding portion for holding the conductive contact state between the lead electrodes 15a and 16a and the bump electrodes 24 and 25 is not required.
As a result, the crystal unit 1 does not require a space for providing the holding unit, and thus can be further reduced in size.
In addition, the crystal unit 1 improves productivity because it does not require a conventional adhesive application process as a holding part, and does not require a heating or cooling process for curing the adhesive. Can do.

Further, since the crystal resonator 1 does not require a holding portion, gas is generated from the joint portion between the extraction electrodes 15a and 16a and the bump electrodes 24 and 25, for example, by heating when mounted on an electronic device. There is no fear, and the deterioration of the vibration characteristics of the quartz crystal vibrating piece 10 due to this gas can be avoided.
In the quartz resonator 1, gas leakage from the resin protrusions 24a and 25a in the bump electrodes 24 and 25 during the heating is avoided by the conductive films 24b and 25b covering the surfaces of the resin protrusions 24a and 25a. Yes.

  In addition, since the crystal resonator 1 does not have a holding portion that suppresses the elasticity of the bump electrodes 24 and 25, for example, at the time of impact such as dropping, the joint portion between the extraction electrodes 15 a and 16 a and the bump electrodes 24 and 25. The impact force applied to the electrode is reliably absorbed and relaxed by the elasticity of the bump electrodes 24 and 25, and the impact resistance performance can be improved.

In the quartz resonator 1, the metals used for the lead electrodes 15a and 16a of the quartz vibrating piece 10 and the conductive coatings 24b and 25b of the bump electrodes 24 and 25 of the package base 21 are Cu, Al, and stainless steel in addition to Au. Any one of the same kind of steel may be used.
According to this, in the crystal unit 1, the extraction electrodes 15a and 16a and the conductive coatings 24b and 25b include any one of the same kind of metals of Au, Cu, Al, and stainless steel, and the extraction electrodes 15a and 16a Since the bump electrodes 24 and 25 are directly joined to each other by the same kind of metal, both can be stably and surely directly joined by using a general-purpose same kind of metal.

In the quartz crystal resonator 1, the bump electrodes 24 and 25 have a drum drum-shaped curved surface in the thickness direction of the package base 21.
In other words, the bump electrodes 24 and 25 have a middle portion in the thickness direction protruding directly to the outside in a drum drum-like curved shape by direct bonding.
Thereby, in the crystal resonator 1, the impact force applied at the time of impact such as dropping is concentrated on a specific portion of the bump electrodes 24 and 25 (for example, the interface between the resin protrusions 24a and 25a and the support surface 23 of the package base 21). Therefore, the impact resistance performance can be further improved since the stress is almost uniformly dispersed (stress concentration is relaxed). In particular, it is possible to reduce the peeling of the resin protrusions 24 a and 25 a from the vicinity of the interface with the support surface 23 of the package base 21.

Further, in the method of manufacturing the quartz resonator 1, the lead electrodes 15a and 16a of the crystal vibrating piece 10 and the bump electrodes 24 and 25 subjected to the surface activation treatment of the package base 21 are pressed at room temperature, and the lead electrodes 15a and 16a are pressed. Since the bump electrodes 24 and 25 are directly bonded to each other by the same element (same metal (Au—Au)), the crystal resonator 1 having the above-described effects can be provided.
In addition, since the crystal resonator 1 is manufactured by directly joining the lead electrodes 15a and 16a and the bump electrodes 24 and 25 at room temperature, the steps such as heating and cooling associated with the direct joining are not required. Can be improved.

  In addition, in the method of manufacturing the quartz resonator 1, in the surface activation processing step S3, the lead electrodes 15a and 16a of the crystal vibrating piece 10 are also surface activated, in other words, the lead electrode 15a of the quartz crystal piece 10. , 16a is further provided with a step of surface activation treatment, whereby the direct connection between the lead electrodes 15a, 16a and the bump electrodes 24, 25 can be more reliably performed.

(Modification)
Hereinafter, modifications of the crystal resonator according to the first embodiment will be described.
FIG. 8A to FIG. 8D are schematic perspective views showing variations in the shape of the bump electrode in the crystal resonator according to the modification.
In the above embodiment, the shape of the protruding portions of the bump electrodes 24 and 25 of the crystal unit 1 is hemispherical, but the shape is not limited to this, and may be a shape as shown in FIG.

More specifically, the protruding portions of the bump electrodes 24 and 25 may have a quadrangular pyramid shape as shown in FIG. 8A, or a conical shape as shown in FIG. As shown in FIG. 8 (c), the front end side of the quadrangular pyramid of FIG. 8 (a) may be cut off by a plane, and as shown in FIG. 8 (d), the front end side of the cone of FIG. 8 (b). It is good also as the shape which cut off by the plane.
The quartz crystal resonator according to the modified example can exhibit at least a part of the effects described in the first embodiment regardless of the shape of the bump electrodes 24 and 25 described above.

In the embodiment and the modification, the lead electrodes 15a and 16a of the quartz crystal resonator element 10 and the conductive coatings 24b and 25b of the bump electrodes 24 and 25 of the package base 21 are directly made of the same kind of metal (Au—Au). Although it was joined, it is not limited to this, It is good also as direct joining with dissimilar metals (for example, Au-Ni, Au-Cr, Au-Pd etc.).
Further, in the above-described embodiment and modification, the quartz crystal resonator element is an AT cut type, but is not limited to this, and may be a sensor element element such as a tuning fork type, a surface acoustic wave element, or a WT type.
In the above-described embodiment and modification, the bump electrodes 24 and 25 are provided on the package base 21, but the bump electrodes 24 and 25 are provided on the crystal vibrating piece 10 side instead of the lead electrodes 15 a and 16 a, and the bump electrodes 24 and 25 are provided. Instead of 25, connection electrodes (flat electrodes such as lead electrodes 15a and 16a) may be provided on the package base 21 side.

(Second Embodiment)
Hereinafter, a mobile phone as an electronic device will be described as an example.
FIG. 9 is a schematic perspective view showing the mobile phone of the second embodiment.
A mobile phone 700 according to the second embodiment is a mobile phone using the crystal resonator according to the first embodiment or a modification of the first embodiment.
A cellular phone 700 shown in FIG. 9 uses the above-described crystal resonator 1 as a timing device such as a reference clock oscillation source, and further includes a liquid crystal display device 701, a plurality of operation buttons 702, an earpiece 703, and a mouthpiece. 704 is provided.

  The above-described crystal unit 1 is not limited to the above mobile phone, but is an electronic book, personal computer, television, digital still camera, video camera, video recorder, car navigation device, pager, electronic notebook, calculator, word processor, workstation, television. It can be suitably used as a timing device such as a device including a telephone, a POS terminal, and a touch panel, and in any case, an electronic device that exhibits the effects described in the above-described embodiments and modifications can be provided.

(Third embodiment)
Hereinafter, a pressure sensor module as an electronic component will be described as an example.
FIG. 10 is a schematic diagram illustrating a schematic configuration of a pressure sensor module according to the third embodiment. 10A is a plan view seen from the diaphragm layer side, and FIG. 10B is a cross-sectional view taken along line EE of FIG. FIG. 11 is a schematic enlarged cross-sectional view taken along line FF in FIG. In the plan view, the diaphragm layer is omitted for convenience.

As shown in FIGS. 10 and 11, the pressure sensor module 2 includes a pressure sensor 101 as a vibration device and a substrate 221 on which the pressure sensor 101 is placed.
The pressure sensor 101 includes a pressure-sensitive element layer 110, a diaphragm layer 120 as a diaphragm that covers one main surface 111 side of the pressure-sensitive element layer 110, and a base layer that covers the other main surface 112 side of the pressure-sensitive element layer 110. 130.
The pressure sensor 101 is formed in a substantially rectangular parallelepiped shape by laminating the layers so that the outlines overlap each other in plan view.
Note that each layer of the pressure sensor 101 is formed in a predetermined shape by a processing method such as photo-etching or sand blasting using a wafer-shaped quartz substrate that can be taken in plural as a base material.

The pressure-sensitive element layer 110 includes a pair of prismatic vibrating piece portions (columnar beams) 113 that are substantially parallel to each other as pressure-sensitive portions, and a pair of substantially rectangular base portions 114 that are connected to both ends of the vibrating piece portion 113. A double tuning fork element 115 as a pressure sensitive element, a substantially rectangular frame portion 116 surrounding the double tuning fork element 115, and a pair of beam-like arm portions connecting the frame portion 116 and each base portion 114 of the double tuning fork element 115. 117.
The pressure-sensitive element layer 110 is formed in a substantially rectangular outer shape in plan view, and the thickness of each component is substantially the same. Note that an electrode (not shown) of the double tuning fork element 115 is drawn out to the frame portion 116 via the arm portion 117.

Diaphragm layer 120 has a substantially rectangular outer shape in plan view.
The diaphragm layer 120 is disposed so as to cover one main surface 111 side of the pressure-sensitive element layer 110.
Diaphragm layer 120 is formed from concave portion 121 to pressure sensitive element layer at a position facing concave portion 121 that is deflected by an external pressure, outer peripheral frame portion 122 that surrounds concave portion 121, and a pair of base portions 114 of double tuning fork element 115. 110, and a pair of support portions 123 to which the base portions 114 of the double tuning fork element 115 are joined.

In the pressure sensor 101, a space is formed between the vibrating piece 113 of the double tuning fork element 115 and the recess 121 of the diaphragm layer 120.
The outer peripheral frame portion 122 of the diaphragm layer 120 is bonded to the frame portion 116 of the pressure sensitive element layer 110 via a bonding member (not shown).
For the joining member, for example, low melting point glass or epoxy adhesive can be used, and it is preferable that they are made of a material that approximates the thermal expansion coefficient of quartz.

The base layer 130 has a substantially rectangular outer shape in plan view. In the base layer 130, a recess 131 is formed on the pressure sensitive element layer 110 side to form a space between the double tuning fork element 115.
The base layer 130 is disposed so as to cover the other main surface 112 side of the pressure-sensitive element layer 110, and the outer peripheral frame part 132 surrounding the recess 131 serves as a bonding member (not shown) and the frame part 116 of the pressure-sensitive element layer 110. Are joined through.
Connection electrodes 134 and 135 are provided on the bottom surface 133 on the outer side of the base layer 130. The connection electrodes 134 and 135 are joined to the respective electrodes of the double tuning fork element 115 by internal wiring (not shown).
The connection electrodes 134 and 135 are metal coatings having a structure in which Cr is used as a base layer and Au is laminated thereon.

  Note that the arm portion 117 of the pressure-sensitive element layer 110 is not bonded to either the diaphragm layer 120 or the base layer 130 and is in a free state.

With the above-described configuration, the pressure sensor 101 has the double tuning fork in a state where spaces are formed between the diaphragm layer 120 and the vibrating piece 113 of the double tuning fork element 115 and between the double tuning fork element 115 and the base layer 130. Each base 114 of the element 115 is joined to each support 123 of the diaphragm layer 120.
Thereby, the pressure sensor 101 is in a state where the double tuning fork element 115 is bridged between the support portions 123.

  The pressure sensor 101 configured as described above is hermetically sealed inside and kept in a vacuum state (a state with a high degree of vacuum), and is a pressure sensor that detects absolute pressure.

The substrate 221 is provided with bump electrodes 224 and 225 on a support surface 223 that supports the pressure sensor 101 as a main surface.
The bump electrodes 224 and 225 have a shape protruding from the support surface 223 of the substrate 221 toward the pressure sensor 101 side, and as shown in FIG. 11, the resin protrusions 224 a and 225 a having elasticity and the resin protrusions Conductive films 224b and 225b covering the surfaces of 224a and 225a.
The resin protrusions 224a and 225a of the bump electrodes 224 and 225 are formed so as to protrude in a hemispherical shape at a position facing the connection electrodes 134 and 135 of the pressure sensor 101 (the shape before joining to the pressure sensor 101).
The conductive films 224b and 225b of the bump electrodes 224 and 225 cover the resin protrusions 224a and 225a and extend to the support surface 223, and the planar shape is formed in a substantially rectangular shape.

The resin protrusions 224a and 225a are formed by coating an elastic resin material such as polyimide on the support surface 223 and performing a patterning process such as photolithography.
In addition to the polyimide resin, the resin protrusions 224a and 225a are made of a silicone-modified polyimide resin, an epoxy resin, a silicone-modified epoxy resin, an acrylic resin, a phenol resin, a silicone resin, a modified polyimide resin, benzocyclobutene, and polybenzoxazole. You may use resin, such as.

Conductive films 224b and 225b formed on the surfaces of the resin protrusions 224a and 225a are vapor-deposited conductive metals such as Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, and lead-free solder. The film is formed by sputtering or the like, and an appropriate patterning process is applied.
In addition, the conductive coatings 224b and 225b can further improve the conductive performance by further coating the surface of the underlying coating composed of Cu, Ni, Al, etc. with Au plating or the like.
In the present embodiment, the surfaces of the conductive coatings 224b and 225b are Au coatings.
Thereby, the connection electrodes 134 and 135 of the pressure sensor 101 and the bump electrodes 224 and 225 of the substrate 221 contain the same element (here, Au).

In the pressure sensor module 2, the pressure sensor 101 is placed on the support surface 223 of the substrate 221 so that the connection electrodes 134 and 135 are positioned on the bump electrodes 224 and 225.
In the pressure sensor module 2, the connection electrodes 134 and 135 of the pressure sensor 101 and the bump electrodes 224 and 225 whose surfaces of the conductive coatings 224b and 225b are activated by irradiation with an argon beam or the like are aligned. Thus, the pressure sensor 101 and the substrate 221 are directly joined by being pressed at a normal temperature in a direction approaching each other. (As a principle of direct bonding, it is considered that bonding is performed by directly bonding bonds of Au atoms on the surface).
In the pressure sensor module 2, the connection electrodes 134 and 135 and the bump electrodes 224 and 225 are electrically and mechanically joined by this direct joining.

As shown in FIG. 11, the bump electrodes 224 and 225 are slightly plastically deformed by the pressing and are crushed in the thickness direction.
The bump electrodes 224 and 225 have a drum-shaped curved surface in the thickness direction of the substrate 221. More specifically, the bump electrodes 224 and 225 have external starting points P1 where the conductive coatings 224b and 225b rise upward from the support surface 223 of the substrate 221 (on the pressure sensor 101 side) along the resin protrusions 224a and 225a. Is located in the spreading direction of the support surface 223 of the substrate 221 so as to be located closer to the center of the bump electrodes 224 and 225 than the tangent S1 orthogonal to the support surface 223 of the substrate 221 among the tangents contacting the conductive coatings 224b and 225b It has a shape that is rounded and convex.
In other words, the distance L11 from the center line O1 in the radial direction to the starting point P1 at the resin protrusions 224a and 225a of the bump electrodes 224 and 225 is shorter than the distance L12 from the center line O1 to the tangent line S1.
That is, the bump electrodes 224 and 225 have a middle portion in the thickness direction (up and down direction in the drawing) protruding directly to the outside in a drum drum-shaped curved surface by direct bonding.
Note that a two-dot chain line in FIG. 11 indicates a cross-sectional shape (substantially semicircular shape) before the bump electrodes 224 and 225 are joined.

Here, an outline of the basic operation of the pressure sensor module 2 will be described.
In the pressure sensor module 2, the base layer 130 side of the pressure sensor 101 is placed on the support surface 223 side of the substrate 221, and the surface 226 on the opposite side (back side) of the support surface 223 of the substrate 221 is a mounting surface of an external device (not shown). It is comprised so that it may be mounted.
The pressure sensor module 2 has a function of detecting a pressure from the outside by a change in the resonance frequency of the vibrating piece portion 113 of the double tuning fork element 115 of the pressure sensor 101.

More specifically, as shown in FIG. 10B, when the pressure sensor 101 receives pressure from the outside, the concave portion 121 of the diaphragm layer 120 bends in the direction of arrow G depending on the degree of pressure.
In the pressure sensor 101, each support part 123 of the diaphragm layer 120 is displaced in the arrow H direction with the bending in the arrow G direction (the interval between the support parts 123 changes).
As a result, the double tuning fork element 115 joined in a state of being spanned between the support portions 123 is expanded or contracted by applying a tensile force or a compressive force in the arrow H direction.
At this time, if a tensile force is applied in the direction of the arrow H, the double tuning fork element 115 changes, for example, to the direction in which the resonance frequency of the vibrating piece 113 becomes higher, like the string of a wound string instrument, and in the direction of the arrow H. When a compressive force is applied, for example, the resonance frequency of the vibrating piece portion 113 changes to be lower like a string of a rewinded stringed instrument.

The pressure sensor module 2 detects a change in the resonance frequency of the pressure sensor 101. The pressure from the outside is derived by converting it into a numerical value determined by a look-up table or the like according to the detected change rate of the resonance frequency.
The pressure sensor module 2 has a driving circuit for driving (resonating) the pressure sensor 101 and a numerical value determined by a look-up table or the like according to the rate of change in the detected resonance frequency of the pressure from the outside. It is preferable to include an arithmetic circuit for conversion.

  As described above, in the pressure sensor module 2 of the third embodiment, since the connection electrodes 134 and 135 of the pressure sensor 101 and the bump electrodes 224 and 225 of the substrate 221 are directly joined, for example, a drop or the like At the time of impact, the impact force applied to the joint between the connection electrodes 134 and 135 and the bump electrodes 224 and 225 is reliably absorbed and relaxed by the elasticity of the bump electrodes 224 and 225, and the impact resistance performance can be improved. Become.

Further, in the pressure sensor module 2, since the middle part of the bump electrodes 224 and 225 in the thickness direction (up and down direction on the paper surface) protrudes to the outside in the form of a drum drum-shaped curved surface, the impact applied upon impact such as dropping The force is almost uniformly distributed (stress concentration is alleviated) without concentrating on a specific portion of the bump electrodes 224 and 225 (for example, the interface between the resin protrusions 224a and 225a and the support surface 223 of the substrate 221). ). In particular, it is possible to reduce the peeling of the resin protrusions 224a and 225a from the vicinity of the interface with the support surface 223 of the substrate 221.
As a result, the pressure sensor module 2 can further improve the impact resistance performance.

Further, in the pressure sensor module 2, distortion (for example, thermal stress) generated at the joint portion between the connection electrodes 134 and 135 of the pressure sensor 101 and the bump electrodes 224 and 225 of the substrate 221 is affected by the elasticity of the bump electrodes 224 and 225. Since it is absorbed and relaxed by deformation, it is possible to suppress an adverse effect on the pressure sensor 101 due to distortion.
At this time, the pressure sensor module 2 further absorbs the above distortion because the middle part of the bump electrodes 224 and 225 in the thickness direction (up and down direction in the drawing) protrudes to the outside in the form of a drum-shaped curved surface. It becomes easy to relax, and the adverse effect on the pressure sensor 101 due to the distortion can be further suppressed.

  Further, in the pressure sensor module 2, since the connection electrodes 134 and 135 of the pressure sensor 101 and the bump electrodes 224 and 225 of the substrate 221 are directly bonded, for example, compared with bonding of both by soldering It is possible to reduce the area required for this, and further miniaturization can be achieved.

In each of the above embodiments and modifications, the material of the resonator element (including the double tuning fork element) is quartz. However, the material of the resonator element is not limited to crystal, but lithium tantalate (LiTaO ₃ ). , Piezoelectrics such as lithium tetraborate (Li ₂ B ₄ O ₇ ), lithium niobate (LiNbO ₃ ), lead zirconate titanate (PZT), zinc oxide (ZnO), aluminum nitride (AlN), or zinc oxide A semiconductor such as silicon provided with a piezoelectric material such as (ZnO) or aluminum nitride (AlN) as a film may be used.

  The pressure sensor module 2 described above can be suitably used as a sensor device such as a device equipped with a river water level gauge, a pressure gauge, an automobile tire pressure detection system, and an altimeter. An electronic device having the effects described in the examples can be provided.

  DESCRIPTION OF SYMBOLS 1 ... Crystal resonator as an electronic component, 2 ... Pressure sensor module as an electronic component, 10 ... Quartz vibrating piece as a vibrating piece, 11 ... Vibrating part, 12 ... Base part, 13 ... One main surface, 14 ... Other 15 ... excitation electrode, 15a ... extraction electrode as connection electrode, 16 ... excitation electrode, 16a ... extraction electrode as connection electrode, 20 ... package, 21 ... package base as substrate, 22 ... lid, 23 ... main Support surface as a surface, 24: bump electrode, 24a, 24a '... resin protrusion, 24b ... conductive coating, 25 ... bump electrode, 25a, 25a' ... resin protrusion, 25b ... conductive coating, 26 ... bottom surface, 27, 28 ... external terminal, 30 ... elastic resin material, 40 ... photomask, 41 ... opening, 50 ... surface activation device, 51 ... vacuum chamber, 52 ... stage, 53 ... mounting surface, DESCRIPTION OF SYMBOLS 4 ... Ion beam irradiation apparatus, 60 ... Joining apparatus, 61 ... One side, 62 ... The other side, 63 ... Recessed part, 101 ... Pressure sensor as a vibration device, 110 ... Pressure-sensitive element layer, 111 ... One main surface , 112 ... the other main surface, 113 ... the vibrating piece part, 114 ... the base part, 115 ... the double tuning fork element, 116 ... the frame part, 117 ... the arm part, 120 ... the diaphragm layer, 121 ... the recessed part, 122 ... the outer peripheral frame part, 130 DESCRIPTION OF SYMBOLS ... Base layer 131 ... Concave part 132 ... Peripheral frame part 134, 135 ... Connection electrode, 221 ... Substrate, 223 ... Support surface as main surface, 224 ... Bump electrode, 224a ... Resin protrusion, 224b ... Conductive film, 225 ... Bump electrode, 225a ... resin protrusion, 225b ... conductive film, 226 ... opposite surface, 700 ... cell phone as an electronic device, 701 ... liquid crystal display device, 702 ... operation buttons, 7 3 ... earpiece 704 ... mouthpiece, O, O1 ... center line, P, P1 ... origin, S, S1 ... tangent.

Claims (10)

Comprising a resonator element having a connection electrode, and a substrate having a bump electrode,
The vibration piece is placed on the substrate via the bump electrode and the connection electrode,
The bump electrode has a shape protruding from the main surface of the substrate toward the vibrating piece side,
A resin-made resin protrusion having a convexly rounded shape toward the spreading direction of the main surface of the substrate, and a conductive film covering the surface of the resin protrusion,
The electronic component, wherein the connection electrode and the bump electrode are directly bonded. The electronic component according to claim 1, wherein the bump electrode includes a drum-shaped curved surface in a thickness direction of the substrate,
The starting point at which the conductive coating rises above the substrate along the resin protrusion is the center side of the bump electrode with respect to the tangent line in contact with the conductive coating layer and the tangent line orthogonal to the main surface of the substrate. An electronic component having a rounded shape that is convex toward the spreading direction of the main surface of the substrate so as to be located at   3. The electronic component according to claim 1, wherein the connection electrode and the conductive film include any one of the same kind of metals of Au, Cu, Al, and stainless steel, and the connection electrode and the bump. An electronic component, wherein an electrode is directly bonded to each other by the same kind of metal.   An electronic device comprising the electronic component according to any one of claims 1 to 3. Preparing a resonator element having a connection electrode;
A bump electrode having a resin protrusion protruding from the main surface of the substrate to the vibrating piece side and a conductive film covering the surface of the resin protrusion, wherein the conductive film is the same element as the metal film of the connection electrode Preparing the substrate provided with the bump electrode comprising:
Surface activation treatment of the bump electrode of the substrate;
The connection electrode of the vibrating piece and the bump electrode subjected to surface activation treatment of the substrate are made to face each other, the connection electrode and the bump electrode are pressed at room temperature, and the connection electrode and the bump electrode are Direct bonding,
A method for manufacturing an electronic component, comprising:   6. The method of manufacturing an electronic component according to claim 5, further comprising a step of surface activating the connection electrode of the vibrating piece. A vibration device having a connection electrode, and a substrate having a bump electrode,
The vibration device is placed on the substrate such that the connection electrode is positioned on the bump electrode,
The bump electrode has a shape protruding from the main surface of the substrate toward the vibration device side,
A resin-made resin protrusion having a convexly rounded shape toward the spreading direction of the main surface of the substrate, and a conductive film covering the surface of the resin protrusion,
The electronic component, wherein the connection electrode and the bump electrode are directly bonded. The electronic component according to claim 7, wherein the bump electrode includes a drum-shaped curved surface in a thickness direction of the substrate,
The starting point of the conductive coating rising toward the upper side of the substrate along the resin protrusion is a center side of the bump electrode with respect to a tangent line in contact with the conductive coating film and a tangent line orthogonal to the main surface of the substrate. An electronic component having a rounded shape that is convex toward the spreading direction of the main surface of the substrate so as to be located at   9. The electronic component according to claim 7, wherein the connection electrode and the conductive coating include one kind of the same metal of Au, Cu, Al, and stainless steel, and the connection electrode and the bump An electronic component, wherein an electrode is directly bonded to each other by the same kind of metal.   An electronic apparatus comprising the electronic component according to any one of claims 7 to 9.

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