JP2012078843A5 - Semiconductor device - Google Patents

Claims (4)

An island-like semiconductor layer, a first conductive layer, and a second conductive layer,
The island-shaped semiconductor layer has a first region and a second region,
The first region has a first impurity region and a second impurity region,
The second region has a third impurity region,
The first area is an area provided extending in one direction,
The second region is a region extending from a region between the first impurity region and the second impurity region in a direction perpendicular to the one direction,
The first to third impurity regions have the same conductivity type,
The first conductive layer has a region overlapping the region between the first impurity region and the second impurity region,
The first conductive layer has a region overlapping a portion of the second region,
The first conductive layer has a region functioning as a gate electrode,
The second conductive layer is electrically connected to the third impurity region,
The second conductive layer has a region which functions as a wiring.
The semiconductor device according to claim 1, wherein the first conductive layer does not overlap with the second conductive layer. An island-like semiconductor layer, a first conductive layer, and a second conductive layer,
The island-shaped semiconductor layer has a first region and a second region,
The first region has a first impurity region and a second impurity region,
The second region has a third impurity region,
The first area is an area provided extending in one direction,
The second region is a region extending from a region between the first impurity region and the second impurity region in a direction perpendicular to the one direction,
The first to third impurity regions have the same conductivity type,
The first conductive layer has a region overlapping the region between the first impurity region and the second impurity region,
The first conductive layer has a region overlapping a portion of the second region,
The first conductive layer has a region functioning as a gate electrode,
The second conductive layer is electrically connected to the third impurity region,
The second conductive layer has a region functioning as a source or drain wiring,
The semiconductor device according to claim 1, wherein the first conductive layer does not overlap with the second conductive layer. The semiconductor device according to claim 1, wherein a width of the first region in a direction parallel to the one direction is different from a width of the second region in a direction perpendicular to the one direction. . The semiconductor device according to claim 1, wherein a width of the first region extending in the one direction is different from a width of the second region extending in the direction perpendicular to the one direction. .