JP2012059857A - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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Publication number
JP2012059857A
JP2012059857A JP2010200515A JP2010200515A JP2012059857A JP 2012059857 A JP2012059857 A JP 2012059857A JP 2010200515 A JP2010200515 A JP 2010200515A JP 2010200515 A JP2010200515 A JP 2010200515A JP 2012059857 A JP2012059857 A JP 2012059857A
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power semiconductor
semiconductor device
semiconductor element
refrigerant
heat sink
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Noboru Miyamoto
宮本　　昇
Seiichiro Inokuchi
誠一郎 猪ノ口
Natsuki Tsuji
夏樹 辻
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2010200515A priority Critical patent/JP2012059857A/en
Priority to DE201110081218 priority patent/DE102011081218A1/en
Publication of JP2012059857A publication Critical patent/JP2012059857A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a power semiconductor device which secures insulation for an attachment surface and has high heat radiation.SOLUTION: A power semiconductor device according to this invention includes a power semiconductor element 1, a heat sink 2 disposed so as to contact with a bottom surface of the power semiconductor element 1 and made of a metal, and insulation means 3 provided on a surface of the heat sink 2, which is the side opposite to a surface contacting with the power semiconductor element 1, and insulating the power semiconductor element 1 from an attachment surface 4 to which the power semiconductor element 1 is attached. Further, a passage 2a, in which a coolant flows, is formed in the heat sink 2.

Description

この発明は、電力半導体装置の冷却性能を向上し、取り付け面に対する絶縁性能を確保する技術に関するものである。   The present invention relates to a technique for improving the cooling performance of a power semiconductor device and ensuring insulation performance with respect to a mounting surface.

パワーＭＯＳＦＥＴ（Metal-Oxide-Semiconductor Field-Effect Transistor）や絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ：Insulated Gate Bipolar Transistor）などの電力制御素子とその駆動回路、さらに各種の保護回路を一つのパッケージに組み込んだパワーモジュールであるＩＰＭ（Intelligent Power Module）は、一般産業機器のモーター駆動・制御のスイッチング素子として広く用いられている。   Power modules that incorporate power control elements such as power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and insulated gate bipolar transistors (IGBTs), their drive circuits, and various protection circuits in one package An IPM (Intelligent Power Module) is widely used as a motor drive / control switching element for general industrial equipment.

このようなＩＰＭでは、放熱板で半導体チップを冷却することにより加熱保護機能を実現している。例えば特許文献１で開示されている電力変換装置では、冷却を司る放熱板と半導体チップの間に絶縁板を設け、半導体チップの取り付け面に対する絶縁性を確保している。   In such an IPM, a heat protection function is realized by cooling a semiconductor chip with a heat sink. For example, in the power conversion device disclosed in Patent Document 1, an insulating plate is provided between a heat sink that controls cooling and a semiconductor chip to ensure insulation with respect to the mounting surface of the semiconductor chip.

特開２００５−３５３８８０号公報JP-A-2005-353880

特許文献１のように絶縁板を設ける場合、絶縁性能を高めるために絶縁板を厚くすれば、放熱性が悪化してしまい、絶縁板を薄くして放熱性を高めれば絶縁性が悪化してしまうという、絶縁性と放熱性のトレードオフが生じる。   When an insulating plate is provided as in Patent Document 1, if the insulating plate is thickened in order to enhance the insulating performance, the heat dissipation is deteriorated, and if the insulating plate is thinned to increase the heat dissipation, the insulating property is deteriorated. That is, there is a trade-off between insulation and heat dissipation.

そこで本発明は上述の問題点に鑑み、取り付け面に対する絶縁性を確保すると同時に高い放熱性を有する電力半導体装置の提供を目的とする。   In view of the above-described problems, an object of the present invention is to provide a power semiconductor device having high heat dissipation while ensuring insulation on the mounting surface.

本発明に係る電力半導体装置は、電力半導体素子と、電力半導体素子の底面に当接して配設された金属からなる放熱板と、放熱板の電力半導体素子との当接面とは反対側の面に設けられ、電力半導体素子を電力半導体素子が取り付けられる取り付け面に対して絶縁する絶縁手段とを備え、放熱板には内部に冷媒が流れる流路が形成される。   A power semiconductor device according to the present invention includes a power semiconductor element, a heat sink made of metal disposed in contact with the bottom surface of the power semiconductor element, and a contact surface of the heat sink opposite to the power semiconductor element. And an insulating means for insulating the power semiconductor element from a mounting surface to which the power semiconductor element is attached. A flow path through which a refrigerant flows is formed in the heat radiating plate.

本発明に係る電力半導体装置は、電力半導体素子と、電力半導体素子の底面に当接して配設された金属からなる放熱板と、放熱板の電力半導体素子との当接面とは反対側の面に設けられ、電力半導体素子を電力半導体素子が取り付けられる取り付け面に対して絶縁する絶縁手段とを備えるので、半導体素子を取り付け面に対して絶縁すると同時に放熱板により冷却することが可能である。さらに、放熱板には内部に冷媒が流れる流路が形成されるので、冷媒による冷却によって高い放熱性を得ることが可能である。   A power semiconductor device according to the present invention includes a power semiconductor element, a heat sink made of metal disposed in contact with the bottom surface of the power semiconductor element, and a contact surface of the heat sink opposite to the power semiconductor element. Insulating means provided on the surface and insulating the power semiconductor element from the mounting surface on which the power semiconductor element is mounted, so that the semiconductor element can be insulated from the mounting surface and simultaneously cooled by the heat sink . Furthermore, since a flow path through which the refrigerant flows is formed in the heat radiating plate, it is possible to obtain high heat dissipation by cooling with the refrigerant.

本発明の実施の形態１に係る電力半導体装置の構成を示す斜視図である。1 is a perspective view showing a configuration of a power semiconductor device according to a first embodiment of the present invention. 本発明の実施の形態１に係る電力半導体装置の構成を示す斜視図である。1 is a perspective view showing a configuration of a power semiconductor device according to a first embodiment of the present invention. 本発明の実施の形態２に係る電力半導体装置の動作を説明するブロック図である。It is a block diagram explaining operation | movement of the electric power semiconductor device which concerns on Embodiment 2 of this invention. 本発明の実施の形態３に係る電力半導体装置の構成を示す斜視図である。It is a perspective view which shows the structure of the power semiconductor device which concerns on Embodiment 3 of this invention.

（実施の形態１）
＜構成＞
図１は、実施の形態１に係る電力半導体装置の構造を模式的に示した図である。本明細書では、ＭＯＳ構造を有する半導体素子自体を狭義の「半導体装置」と定義する他、例えば放熱手段や絶縁手段を含むパワーモジュール自体も広義の「半導体装置」と定義する。 (Embodiment 1)
<Configuration>
FIG. 1 is a diagram schematically showing the structure of the power semiconductor device according to the first embodiment. In this specification, the semiconductor element itself having a MOS structure is defined as a “semiconductor device” in a narrow sense, and a power module itself including, for example, a heat dissipation means and an insulating means is also defined as a “semiconductor device” in a broad sense.

本実施の形態の電力半導体装置では、半導体チップ１の裏面に例えば金属からなる放熱板２が設けられ、放熱板２の底面は絶縁シート３を介して取り付け面４に取り付けられている。   In the power semiconductor device of the present embodiment, a heat radiating plate 2 made of, for example, metal is provided on the back surface of the semiconductor chip 1, and the bottom surface of the heat radiating plate 2 is attached to the attachment surface 4 via an insulating sheet 3.

半導体チップ１は、例えばＭＯＳＦＥＴやＩＧＢＴなどの電力用半導体素子であり、絶縁手段としての絶縁シート３により半導体チップ１は取り付け面４に対して絶縁されている。なお、半導体チップ１の材料にはＳｉの他、ＳｉＣやＧａＮといったＳｉよりもバンドギャップの大きいワイドバンドギャップ半導体を用いても良い。こうしたワイドバンドギャップ半導体で構成した電力用半導体素子は高温動作が可能になるという利点がある。   The semiconductor chip 1 is a power semiconductor element such as a MOSFET or an IGBT, and the semiconductor chip 1 is insulated from the mounting surface 4 by an insulating sheet 3 as an insulating means. As a material of the semiconductor chip 1, a wide band gap semiconductor having a band gap larger than Si, such as SiC or GaN, may be used in addition to Si. Such a power semiconductor element composed of a wide band gap semiconductor has an advantage that it can be operated at a high temperature.

放熱板２には図１に示すように流路２ａが形成されており、放熱板２は表面からの放熱と流路２ａに供給される冷媒による放熱により、半導体チップ１を冷却する。   As shown in FIG. 1, the heat radiating plate 2 is formed with a flow path 2a. The heat radiating plate 2 cools the semiconductor chip 1 by radiating heat from the surface and radiating heat from the refrigerant supplied to the flow path 2a.

本実施の形態の電力半導体装置ではこのように、取り付け面４の上に絶縁シート３、放熱板２、半導体チップ１の順に構成することにより、半導体チップ１の絶縁性と放熱性とを両立することが可能である。   In this way, in the power semiconductor device of the present embodiment, the insulating sheet 3, the heat radiating plate 2, and the semiconductor chip 1 are configured in this order on the mounting surface 4, thereby achieving both the insulating property and the heat radiating property of the semiconductor chip 1. It is possible.

なお、図１では絶縁シート３を用いて半導体チップ１の絶縁を確保する構造を例示したが、半導体チップ１と放熱板２を絶縁体の筐体に収納しても良い。そして筐体を取り付け面４に取り付けることによって、半導体チップ１の取り付け面に対する絶縁が確保できる。   In FIG. 1, the structure in which insulation of the semiconductor chip 1 is ensured by using the insulating sheet 3 is illustrated, but the semiconductor chip 1 and the heat sink 2 may be housed in an insulator casing. Insulating the mounting surface of the semiconductor chip 1 can be secured by mounting the housing on the mounting surface 4.

＜冷媒供給手段＞
さらに本実施の形態の電力半導体装置は、放熱板２の流路２ａに冷媒を供給する冷媒供給手段を備えている。図２に、冷媒供給手段を含む本実施の形態の電力半導体装置の斜視図を示す。 <Refrigerant supply means>
Furthermore, the power semiconductor device of the present embodiment includes a refrigerant supply unit that supplies a refrigerant to the flow path 2a of the heat radiating plate 2. FIG. 2 is a perspective view of the power semiconductor device of the present embodiment including the refrigerant supply means.

図２に示すように、電力半導体装置は冷媒供給手段としてファン６を備え、ファン６と放熱板２の流路２ａとは接合部としての樹脂パイプ５で接合されている。ファン６を構成する筐体自体を絶縁体で構成しても良いが、樹脂パイプ５が絶縁性を有するため、ファン６は導電性の筐体で構成しても良い。あるいは、接合部に絶縁体を用いない場合は、ファン６の筐体に絶縁体を用いる。このような構成により、半導体チップ１は冷媒供給手段に対して絶縁される。   As shown in FIG. 2, the power semiconductor device includes a fan 6 as a refrigerant supply means, and the fan 6 and the flow path 2 a of the heat radiating plate 2 are joined by a resin pipe 5 as a joint portion. Although the housing itself constituting the fan 6 may be formed of an insulator, since the resin pipe 5 has an insulating property, the fan 6 may be formed of a conductive housing. Alternatively, when an insulator is not used for the joint, an insulator is used for the housing of the fan 6. With such a configuration, the semiconductor chip 1 is insulated from the coolant supply means.

以上の例ではファン６を冷媒供給手段として用い、冷媒として空気を流路２ａに供給したが、冷媒や冷媒供給手段には様々なものを用いることが可能である。例えば、冷媒供給手段としてコンプレッサー、コンデンサー、膨張弁及びエバポレーターで構成される蒸気圧縮冷凍機を用いても良い。あるいは、上述の蒸気圧縮冷凍機において膨張弁の代わりにエジェクターと気液分離器を備えた、エジェクターサイクルの蒸気圧縮冷凍機であっても良い。これらの場合、冷媒には絶縁性の気体であるフロン系ガスや炭酸ガスを用いる。冷媒に絶縁物を用いることによって、半導体チップ１の冷媒供給手段に対する絶縁性がさらに向上する。   In the above example, the fan 6 is used as the refrigerant supply means, and air is supplied to the flow path 2a as the refrigerant. However, various refrigerants and refrigerant supply means can be used. For example, a vapor compression refrigerator composed of a compressor, a condenser, an expansion valve, and an evaporator may be used as the refrigerant supply means. Alternatively, the above-described vapor compression refrigerator may be an ejector cycle vapor compression refrigerator including an ejector and a gas-liquid separator instead of the expansion valve. In these cases, a fluorocarbon gas or carbon dioxide gas, which is an insulating gas, is used as the refrigerant. By using an insulator as the coolant, the insulation of the semiconductor chip 1 with respect to the coolant supply means is further improved.

あるいは、冷媒供給手段は液体を循環させる流体ポンプであっても良い。   Alternatively, the refrigerant supply means may be a fluid pump that circulates liquid.

＜効果＞
実施の形態１に係る電力半導体装置は、電力半導体素子としての半導体チップ１と、半導体チップ１の底面に当接して配設された金属からなる放熱板２と、放熱板２の半導体チップ１との当接面とは反対側の面に設けられ、半導体チップ１を半導体チップ１が取り付けられる取り付け面４に対して絶縁する絶縁手段とを備えるので、半導体チップ１を取り付け面４に対して絶縁すると同時に放熱板２により冷却することが可能である。さらに、放熱板２には内部に冷媒が流れる流路２ａが形成されるので、冷媒による冷却によって高い放熱性を得ることが可能である。 <Effect>
The power semiconductor device according to the first embodiment includes a semiconductor chip 1 as a power semiconductor element, a heat sink 2 made of metal disposed in contact with the bottom surface of the semiconductor chip 1, and a semiconductor chip 1 of the heat sink 2. Insulating means for insulating the semiconductor chip 1 from the mounting surface 4 to which the semiconductor chip 1 is attached are provided on the surface opposite to the contact surface of the semiconductor chip 1. At the same time, it is possible to cool by the heat radiating plate 2. Furthermore, since the flow path 2a through which the refrigerant flows is formed in the heat radiating plate 2, it is possible to obtain high heat dissipation by cooling with the refrigerant.

また、実施の形態１に係る電力半導体装置は、流路２ａに冷媒を供給する冷媒供給手段と、流路２ａと冷媒供給手段とを接合する接合部とをさらに備え、接合部及び／又は冷媒供給手段の筐体が絶縁体で構成されるので、半導体チップ１の冷媒供給手段に対する絶縁性を確保することができる。   In addition, the power semiconductor device according to Embodiment 1 further includes a refrigerant supply unit that supplies the refrigerant to the flow path 2a, and a junction that joins the flow path 2a and the refrigerant supply unit, and the junction and / or the refrigerant. Since the casing of the supply means is made of an insulator, it is possible to ensure insulation of the semiconductor chip 1 with respect to the refrigerant supply means.

あるいは、実施の形態１に係る電力半導体装置において、絶縁手段は半導体チップ１と放熱板２を収納する筐体として設けられる。半導体チップ１は絶縁体の筐体を介して取り付け面４に取り付けられることで、取り付け面に対する絶縁性を確保することができる。   Alternatively, in the power semiconductor device according to the first embodiment, the insulating means is provided as a housing that houses the semiconductor chip 1 and the heat sink 2. The semiconductor chip 1 is secured to the mounting surface 4 via an insulating housing, thereby ensuring insulation against the mounting surface.

また、実施の形態１に係る電力半導体装置において、冷媒を絶縁体にすることにより半導体チップ１の冷媒供給手段に対する絶縁性をさらに向上することができる。   Further, in the power semiconductor device according to the first embodiment, the insulating property of the semiconductor chip 1 with respect to the coolant supply means can be further improved by using the coolant as an insulator.

また、実施の形態１に係る電力半導体装置において、冷媒供給手段は空冷ファン６又は蒸気圧縮冷凍機又は流体ポンプであり、このそれぞれに対して冷媒は空気又はフロン系ガスないし炭酸ガス又は液体である。このような構成で放熱板２の流路２ａに冷媒を導入することにより、半導体チップ１の放熱性を高めることが出来る。   In the power semiconductor device according to the first embodiment, the refrigerant supply means is an air cooling fan 6, a vapor compression refrigerator, or a fluid pump, and the refrigerant is air, chlorofluorocarbon gas, carbon dioxide gas, or liquid, respectively. . By introducing the refrigerant into the flow path 2a of the heat radiating plate 2 with such a configuration, the heat dissipation of the semiconductor chip 1 can be enhanced.

また、実施の形態１に係る電力半導体装置において、冷媒供給手段にエジェクターサイクルの蒸気圧縮冷凍機を用いることによっても、半導体チップ１の放熱性を高めることが出来る。   In the power semiconductor device according to the first embodiment, the heat dissipation of the semiconductor chip 1 can also be improved by using an ejector cycle vapor compression refrigerator as the refrigerant supply means.

（実施の形態２）
実施の形態２に係る電力半導体装置は、実施の形態１の構成に加えて、半導体チップ１の温度を測定する温度センサーと、温度センサーの測定値に応じて冷媒供給手段を制御するマスターＥＣＵとをさらに備えている。これら以外の構成は実施の形態１と同様であるため、説明を省略する。 (Embodiment 2)
In addition to the configuration of the first embodiment, the power semiconductor device according to the second embodiment includes a temperature sensor that measures the temperature of the semiconductor chip 1, and a master ECU that controls the refrigerant supply unit according to the measured value of the temperature sensor; Is further provided. Since the configuration other than these is the same as that of the first embodiment, description thereof is omitted.

温度センサーは半導体チップ１の周辺に取り付けられて半導体チップ１の温度を測定し、測定値をマスターＥＣＵに出力する。   The temperature sensor is attached to the periphery of the semiconductor chip 1, measures the temperature of the semiconductor chip 1, and outputs the measured value to the master ECU.

マスターＥＣＵは温度センサーから受け取った測定値に応じて冷媒供給手段を制御する。図２に示すように冷媒供給手段が空冷ファンである場合は、その回転数を調整して放熱板２の流路２ａを流れる空気の流量を制御する。例えば、温度センサーの測定値が所定の閾値よりも高い温度を示している場合には、空冷ファン６の回転数を上げることによって、流路２ａを流れる空気の流量を増し、冷却能力を向上させる。一方、温度センサーの測定値が所定の閾値よりも低い温度を示している場合には、空冷ファン６の回転数を下げることによって、流路２ａを流れる空気の流量を減らし、冷却能力を低下させる。   The master ECU controls the refrigerant supply means according to the measurement value received from the temperature sensor. As shown in FIG. 2, when the refrigerant supply means is an air cooling fan, the flow rate of the air flowing through the flow path 2a of the heat radiating plate 2 is controlled by adjusting the number of rotations. For example, when the measured value of the temperature sensor indicates a temperature higher than a predetermined threshold value, the flow rate of the air flowing through the flow path 2a is increased by increasing the rotation speed of the air cooling fan 6, thereby improving the cooling capacity. . On the other hand, when the measured value of the temperature sensor indicates a temperature lower than the predetermined threshold value, the flow rate of the air flowing through the flow path 2a is reduced and the cooling capacity is lowered by lowering the rotational speed of the air cooling fan 6. .

このように、半導体チップ１の温度に応じて適正な量の冷媒を流路２ａに導入することにより、半導体チップ１の温度が許容量を超えて上昇することや、過大な量の冷媒を導入することによってエネルギーロスが生じることを避けることができる。   Thus, by introducing an appropriate amount of refrigerant into the flow path 2a according to the temperature of the semiconductor chip 1, the temperature of the semiconductor chip 1 rises beyond an allowable amount, or an excessive amount of refrigerant is introduced. By doing so, energy loss can be avoided.

上記には冷媒供給手段が空冷ファン６である場合の動作を説明したが、実施の形態１で説明した流体ポンプなどの他の冷媒供給手段についても同様に、半導体チップ１の温度に応じた冷媒供給量の制御を行う。冷媒供給手段として蒸気圧縮冷凍機を用いる場合には、温度センサーの測定温度に応じてコンプレッサーの容量を制御する。例えばコンプレッサーが回転軸と同軸にクラッチを備えている場合、温度センサーの測定温度に応じてクラッチの締結制御を行うことによりコンプレッサーの回転数を制御することが可能である。冷媒供給手段としてエジェクターサイクルの圧縮冷凍機を用いる場合には、温度センサーの測定温度に応じてエジェクターの圧力を可変にすることにより、冷媒の導入量を制御することができる。   The operation in the case where the refrigerant supply means is the air cooling fan 6 has been described above. However, the refrigerant corresponding to the temperature of the semiconductor chip 1 is similarly applied to other refrigerant supply means such as the fluid pump described in the first embodiment. Control the supply amount. When a vapor compression refrigerator is used as the refrigerant supply means, the capacity of the compressor is controlled according to the temperature measured by the temperature sensor. For example, when the compressor includes a clutch coaxially with the rotation shaft, it is possible to control the rotation speed of the compressor by performing clutch engagement control according to the temperature measured by the temperature sensor. When an ejector cycle compression refrigerator is used as the refrigerant supply means, the amount of refrigerant introduced can be controlled by varying the pressure of the ejector according to the temperature measured by the temperature sensor.

また、図１に示すような複数の流路２ａにおいて、温度センサーの測定温度に応じて冷媒を流す流路を選択するような制御を行っても良い。例えば各流路に設けた弁の開放／閉鎖により、冷媒が流れる流路の数を制御することが出来る。   Further, in the plurality of flow paths 2a as shown in FIG. 1, control may be performed so as to select a flow path through which the refrigerant flows according to the temperature measured by the temperature sensor. For example, the number of channels through which the refrigerant flows can be controlled by opening / closing valves provided in each channel.

＜効果＞
実施の形態２に係る電力半導体装置は、電力半導体素子の温度を測定する温度センサーを備え、冷媒供給手段は温度センサーの測定温度に基づいて冷媒の供給量を制御するので、半導体チップ１の温度が許容量を超えて上昇することや、過大な量の冷媒を導入することによってエネルギーロスが生じることを避けることができる。 <Effect>
The power semiconductor device according to the second embodiment includes a temperature sensor that measures the temperature of the power semiconductor element, and the refrigerant supply unit controls the supply amount of the refrigerant based on the temperature measured by the temperature sensor. Can be prevented from rising beyond the allowable amount, and energy loss can be avoided by introducing an excessive amount of refrigerant.

また、実施の形態２に係る電力半導体装置における冷媒供給手段である蒸気圧縮冷凍機は、クラッチを有するコンプレッサーを備え、温度センサーの測定温度に基づいてクラッチの締結制御を行うことにより、半導体チップ１の温度が許容量を超えて上昇することや、過大な量の冷媒を導入することによってエネルギーロスが生じることを避けることができる。   In addition, the vapor compression refrigerator that is a refrigerant supply unit in the power semiconductor device according to the second embodiment includes a compressor having a clutch, and controls the engagement of the clutch based on the temperature measured by the temperature sensor. It is possible to avoid an increase in the temperature exceeding the allowable amount and an energy loss caused by introducing an excessive amount of refrigerant.

また、実施の形態２に係る電力半導体装置において、流路２ａは放熱板２の内部に複数形成され、温度センサーの測定温度に基づいて冷媒が流れる流路の個数を制御する。   In the power semiconductor device according to the second embodiment, a plurality of the flow paths 2a are formed inside the heat radiating plate 2, and the number of flow paths through which the refrigerant flows is controlled based on the temperature measured by the temperature sensor.

（実施の形態３）
図４は、実施の形態３に係る電力半導体装置の構成を示す斜視図である。実施の形態３に係る電力半導体装置では、半導体チップ１、放熱板２、絶縁シート３、取り付け面４を筐体としての樹脂ケース８で格納する構成となっている。但し、樹脂ケース８は少なくとも半導体チップ１と放熱板２を格納していればよく、絶縁シート３や取り付け面４は樹脂ケース８の外部にあっても良い。この場合には樹脂ケース８によって半導体チップ１と取り付け面４との絶縁性が確保されるため、絶縁シート３は設けなくても良い。 (Embodiment 3)
FIG. 4 is a perspective view showing the configuration of the power semiconductor device according to the third embodiment. In the power semiconductor device according to the third embodiment, the semiconductor chip 1, the heat radiating plate 2, the insulating sheet 3, and the mounting surface 4 are stored in a resin case 8 as a casing. However, the resin case 8 only needs to store at least the semiconductor chip 1 and the heat sink 2, and the insulating sheet 3 and the mounting surface 4 may be outside the resin case 8. In this case, since the insulating property between the semiconductor chip 1 and the mounting surface 4 is ensured by the resin case 8, the insulating sheet 3 may not be provided.

ファン６の樹脂パイプは、樹脂ケース８の開口部を通して放熱板２の流路２ａと接合している。   The resin pipe of the fan 6 is joined to the flow path 2 a of the heat sink 2 through the opening of the resin case 8.

図４に示す樹脂ケース８は上面が開放された構造であり、内側の面の所定の位置には、異物の侵入を検知するエリアセンサー７が設けられている。エリアセンサー７の検知範囲は少なくとも半導体チップ１を含む近傍の範囲であり、エリアセンサー７が異物の侵入を検知した場合、半導体チップ１への通電を停止する。図４ではエリアセンサー７は樹脂ケース８の内側上部に２つ設けているが、設置位置や設置数は任意である。   The resin case 8 shown in FIG. 4 has a structure in which an upper surface is opened, and an area sensor 7 that detects the intrusion of a foreign object is provided at a predetermined position on the inner surface. The detection range of the area sensor 7 is a range in the vicinity including at least the semiconductor chip 1. When the area sensor 7 detects the intrusion of foreign matter, the energization to the semiconductor chip 1 is stopped. In FIG. 4, two area sensors 7 are provided in the upper part inside the resin case 8, but the installation position and the number of installations are arbitrary.

これ以外の構成は実施の形態１と同様であり、冷媒供給手段としてファン６の代わりに実施の形態１で述べた様々な手段を用いることが可能である。   The configuration other than this is the same as that of the first embodiment, and various means described in the first embodiment can be used as the refrigerant supply means instead of the fan 6.

実施の形態３ではエリアセンサー７を設けることにより、樹脂ケース８に収納された半導体チップ１を含む絶縁されていない部分に人が触ろうとした場合に、事前に通電を停止するため感電を防止できる。   In the third embodiment, by providing the area sensor 7, when a person tries to touch an uninsulated part including the semiconductor chip 1 housed in the resin case 8, the electric current is stopped in advance so that an electric shock can be prevented. .

＜変形例＞
樹脂ケース８の一面の少なくとも一部が、例えばスライドすることにより開口部を形成する蓋部として構成され、樹脂ケース８の内側の面に、上述のエリアセンサー７の代わりに樹脂ケース８の上記一面が開口したことを検知する開口センサーを設ける。開口センサーの設置位置や設置数は任意である。開口センサーが樹脂ケース８の開口を検知すると、半導体チップ１の通電を停止する。 <Modification>
At least a part of one surface of the resin case 8 is configured as a lid portion that forms an opening by sliding, for example, and the one surface of the resin case 8 is formed on the inner surface of the resin case 8 instead of the area sensor 7 described above. An opening sensor is provided for detecting the opening of the. The installation position and the number of installation of the aperture sensor are arbitrary. When the opening sensor detects the opening of the resin case 8, the energization of the semiconductor chip 1 is stopped.

＜効果＞
実施の形態３に係る電力半導体装置は、半導体チップ１の近傍領域への侵入物を検知する第１のセンサーとしてのエリアセンサー７を備え、エリアセンサー７が侵入物を検知すると電力半導体素子１の通電を停止するので、人が半導体チップ１を含む通電部を触って感電することを防ぎ、電力半導体装置の安全性を確保する。 <Effect>
The power semiconductor device according to the third embodiment includes an area sensor 7 as a first sensor that detects an intruder in the vicinity region of the semiconductor chip 1. When the area sensor 7 detects an intruder, the power semiconductor element 1 Since the energization is stopped, it is possible to prevent a person from touching the energizing portion including the semiconductor chip 1 to receive an electric shock and to ensure the safety of the power semiconductor device.

実施の形態３に係る電力半導体装置において、筐体としての樹脂ケース８は、樹脂ケース８に開口を形成する蓋部と、前記開口の形成を検知する第２のセンサーとしての開口センサーとを備え、開口センサーが前記開口の形成を検知した場合に半導体チップ１の通電を停止するので、開口から人が半導体チップ１を含む通電部を触って感電することを防ぎ、電力半導体装置の安全性を確保する。   In the power semiconductor device according to the third embodiment, the resin case 8 as a housing includes a lid portion that forms an opening in the resin case 8 and an opening sensor as a second sensor that detects the formation of the opening. When the opening sensor detects the formation of the opening, the energization of the semiconductor chip 1 is stopped. Therefore, it is possible to prevent a person from touching the energizing portion including the semiconductor chip 1 from the opening and receiving an electric shock, thereby improving the safety of the power semiconductor device. Secure.

本発明の電力半導体装置は、例えば放熱性、絶縁性、安全性が要求される自動車に搭載する（すなわち取り付け面４が自動車に設けられる）ことにより有効利用される。   The power semiconductor device of the present invention can be effectively used by being mounted on, for example, a vehicle that requires heat dissipation, insulation, and safety (that is, the mounting surface 4 is provided on the vehicle).

１ 半導体チップ、２ 放熱板、２ａ 流路、３ 絶縁シート、４ 取り付け面、５ 樹脂パイプ、６ ファン、７ エリアセンサー、８ 樹脂ケース。   1 semiconductor chip, 2 heat sink, 2a flow path, 3 insulating sheet, 4 mounting surface, 5 resin pipe, 6 fan, 7 area sensor, 8 resin case.

Claims (13)

電力半導体素子と、
前記電力半導体素子の底面に当接して配設された金属からなる放熱板と、
前記放熱板の前記電力半導体素子との当接面とは反対側の面に設けられ、前記電力半導体素子を当該電力半導体素子が取り付けられる取り付け面に対して絶縁する絶縁手段とを備え、
前記放熱板は内部に冷媒が流れる流路が形成された、
電力半導体装置。 A power semiconductor element;
A heat sink made of metal disposed in contact with the bottom surface of the power semiconductor element;
An insulating means provided on a surface of the heat sink opposite to the contact surface with the power semiconductor element, and insulating the power semiconductor element from a mounting surface to which the power semiconductor element is attached;
The heat sink has a flow path through which a refrigerant flows.
Power semiconductor device. 前記流路に冷媒を供給する冷媒供給手段と、
前記流路と前記冷媒供給手段とを接合する接合部とをさらに備え、
前記接合部及び／又は前記冷媒供給手段の筐体が絶縁体で構成される、
請求項１に記載の電力半導体装置。 Refrigerant supply means for supplying refrigerant to the flow path;
A joining portion that joins the flow path and the refrigerant supply means;
A housing of the joint and / or the refrigerant supply means is formed of an insulator;
The power semiconductor device according to claim 1. 前記絶縁手段は、前記放熱板の前記電力半導体素子との当接面とは反対側の面に設けられる代わりに、前記電力半導体素子と前記放熱板を収納する筐体として設けられる、
請求項２に記載の電力半導体装置。 The insulating means is provided as a housing that houses the power semiconductor element and the heat sink, instead of being provided on the surface of the heat sink opposite to the contact surface with the power semiconductor element.
The power semiconductor device according to claim 2. 前記冷媒は絶縁体である、
請求項２又は３に記載の電力半導体装置。 The refrigerant is an insulator;
The power semiconductor device according to claim 2 or 3. 前記冷媒供給手段は空冷ファン又は蒸気圧縮冷凍機又は流体ポンプであり、
このそれぞれに対して前記冷媒は空気又はフロン系ガスないし炭酸ガス又は液体である、
請求項２〜４のいずれかに記載の電力半導体装置。 The refrigerant supply means is an air cooling fan, a vapor compression refrigerator, or a fluid pump,
For each of these, the refrigerant is air or chlorofluorocarbon gas or carbon dioxide gas or liquid.
The power semiconductor device according to claim 2. 前記冷媒供給手段はエジェクターサイクルの蒸気圧縮冷凍機である、請求項５に記載の電力半導体装置。   The power semiconductor device according to claim 5, wherein the refrigerant supply unit is an ejector cycle vapor compression refrigerator. 前記電力半導体素子の温度を測定する温度センサーをさらに備え、
前記冷媒供給手段は前記温度センサーの測定温度に基づいて前記冷媒の供給量を制御する、
請求項５又は６に記載の電力半導体装置。 A temperature sensor for measuring the temperature of the power semiconductor element;
The refrigerant supply means controls the supply amount of the refrigerant based on a temperature measured by the temperature sensor;
The power semiconductor device according to claim 5 or 6. 前記蒸気圧縮冷凍機は、クラッチを有するコンプレッサーを備え、
前記温度センサーの測定温度に基づいて前記クラッチの締結制御を行う、
請求項７に記載の電力半導体装置。 The vapor compression refrigerator includes a compressor having a clutch,
Engagement control of the clutch is performed based on the temperature measured by the temperature sensor.
The power semiconductor device according to claim 7. 前記流路は前記放熱板の内部に複数形成され、
前記温度センサーの測定温度に基づいて前記冷媒が流れる流路の個数を制御する、
請求項７に記載の電力半導体装置。 A plurality of the flow paths are formed inside the heat sink,
Controlling the number of flow paths through which the refrigerant flows based on the temperature measured by the temperature sensor;
The power semiconductor device according to claim 7. 前記電力半導体素子の近傍領域への侵入物を検知する第１のセンサーをさらに備え、
前記第１のセンサーが前記侵入物を検知すると前記電力半導体素子の通電を停止することを特徴とする、
請求項１〜９のいずれかに記載の電力半導体装置。 A first sensor for detecting an intrusion into a region near the power semiconductor element;
When the first sensor detects the intruder, the power semiconductor element is de-energized,
The power semiconductor device according to claim 1. 前記筐体は、
前記筐体に開口を形成する蓋部と、
前記開口の形成を検知する第２のセンサーとを備え、
前記第２のセンサーが前記開口の形成を検知した場合に前記電力半導体素子の通電を停止する、
請求項３に記載の電力半導体装置。 The housing is
A lid that forms an opening in the housing;
A second sensor for detecting the formation of the opening,
Stopping energization of the power semiconductor element when the second sensor detects formation of the opening;
The power semiconductor device according to claim 3. 前記電力半導体素子が取り付けられる前記取り付け面４は自動車に設けられる、請求項１〜１１のいずれかに記載の電力半導体装置。   The power semiconductor device according to claim 1, wherein the attachment surface 4 to which the power semiconductor element is attached is provided in an automobile. 前記電力半導体素子はワイドバンドギャップ半導体で構成される、
請求項１〜１２のいずれかに記載の電力半導体装置。 The power semiconductor element is composed of a wide band gap semiconductor,
The power semiconductor device according to claim 1.
JP2010200515A 2010-09-08 2010-09-08 Power semiconductor device Pending JP2012059857A (en)

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