JP2012057109A - Resin composition, adhesive film, semiconductor device, multilayer circuit board and electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin composition which can align easily a first adherend and a second adherend, when bonding the first adherend to the second adherend, and to provide an adhesive film using such a resin composition, a semiconductor device, a multilayer circuit board and an electronic component.SOLUTION: This resin composition is used when bonding the first adherend to the second adherend, so as to constitute a resin composition layer 1 provided on the first adherend. The resin composition is constituted so that the resin composition layer 1 is provided with an average thickness t [μm], and that, assuming that an absorption coefficient of the resin composition layer 1 in light of the wavelength of 800 nm is α [1/μm], following formula (1): α×t≤-log(0.05), and formula (2): 1≤t≤200 are satisfied.

Description

  The present invention relates to a resin composition, an adhesive film, a semiconductor device, a multilayer circuit board, and an electronic component.

  With recent demands for higher functionality and lighter, thinner and smaller electronic devices, semiconductor packages used in these electronic devices are becoming smaller and multi-pin than ever. In order to obtain an electrical connection between these electronic components, solder bonding is used. Examples of the solder bonding include a conductive bonding portion between semiconductor chips, a conductive bonding portion between a semiconductor chip such as a package mounted in a flip chip and a circuit board, a conductive bonding portion between circuit boards, and the like. In order to ensure electrical connection strength and mechanical connection strength, a sealing resin generally called an underfill material is injected into the solder joint portion (underfill sealing).

  When the gap (gap) generated by this solder joint is reinforced with a liquid sealing resin (underfill material), the liquid sealing resin (underfill material) is supplied after the solder joint, and the solder is bonded by curing it. The part is reinforced. However, as the electronic parts become thinner and smaller, the solder joints have a narrow pitch / narrow gap. There is a problem that the stop resin (underfill material) does not spread and it becomes difficult to completely fill the resin.

  In order to solve such a problem, a method is known in which solder bonding and adhesion are collectively performed via an adhesive film having a flux function (see, for example, Patent Document 1).

  By the way, when using an adhesive film, when joining semiconductor chips, a semiconductor chip and a circuit board, and circuit boards, after bonding an adhesive film on one side, both are aligned. For example, when joining a semiconductor chip and a circuit board, for example, after bonding an adhesive film to the circuit board, the alignment mark of the circuit board and the alignment mark of the semiconductor chip are taken from the thickness direction of the circuit board or the semiconductor chip. The semiconductor chip is aligned with respect to the circuit board by seeing and matching. Thereafter, solder bonding, curing of the adhesive film, and the like are performed. In addition, by sticking the adhesive film on the circuit board, the alignment mark on the circuit board is covered with the adhesive film.

  However, in the conventional adhesive film, the transparency of the adhesive film is poor, the alignment mark cannot be visually recognized through the adhesive film, and the circuit board and the semiconductor chip may not be aligned.

JP 2007-107006 A

  An object of the present invention is to easily align the first adherend and the second adherend when joining the first adherend and the second adherend. The object is to provide a resin composition, and to provide an adhesive film, a semiconductor device, a multilayer circuit board and an electronic component using such a resin composition.

Such an object is achieved by the present inventions (1) to (14) below.
(1) A resin composition that is used when bonding a first adherend and a second adherend, and constitutes a resin composition layer provided on the first adherend,
When the resin composition layer is provided with an average thickness t [μm] and the absorption coefficient of the resin composition layer in light having a wavelength of 800 nm is α [1 / μm], the following formulas (1) and (2) It is comprised so that it may satisfy | fill.
α × t ≦ −log ₁₀ (0.05) (1)
1 ≦ t ≦ 200 (2)

(2) The resin composition according to (1), wherein the absorption coefficient α is 1.08 × 10 ^{−5 to} 1.3 [1 / μm].

  (3) The first adherend is provided with a pattern used for alignment of the first adherend and the second adherend, and the resin composition is embedded to fill the pattern. The resin composition according to (1) or (2), wherein a physical layer is provided.

  (4) The resin composition according to (3), wherein the pattern includes at least one of an electrode, a bump, a wiring, and a dicing line.

  (5) The resin composition according to (1) or (2), wherein an alignment mark is provided on the first adherend, and the resin composition layer is provided so as to fill the alignment mark.

  (6) The resin composition according to any one of (1) to (5), which contains an inorganic filler.

  (7) The resin composition according to (6), wherein the content of the inorganic filler is 0.1 to 85% by weight.

  (8) The resin composition according to (6) or (7), wherein the inorganic filler contains silica.

  (9) The resin composition as described in any one of (1) to (8) above, which contains a compound having a flux function.

  (10) The resin composition according to any one of the above (1) to (9), wherein the resin composition layer has a surface roughness Ra (specified in JIS B 0601) of 10 to 1000 nm.

  (11) An adhesive film comprising a resin composition layer composed of the resin composition according to any one of (1) to (10).

  (12) A semiconductor device comprising a cured product of the resin composition according to any one of (1) to (10).

  (13) A multilayer circuit board comprising a cured product of the resin composition according to any one of (1) to (10).

  (14) An electronic component comprising a cured product of the resin composition according to any one of (1) to (10).

  ADVANTAGE OF THE INVENTION According to this invention, the surface by the side of the 2nd to-be-adhered body (resin composition layer) of a 1st to-be-adhered body can be favorably visually recognized through a resin composition layer. Thus, when the second adherend is installed on the first adherend via the resin composition layer in the step of joining the first adherend and the second adherend, The site | part which has a function as an alignment mark formed on 1 to-be-adhered body, and the alignment mark of a 1st to-be-adhered body can be visually recognized favorably. Thereby, alignment with a 1st to-be-adhered body and a 2nd to-be-adhered body can be performed correctly.

It is sectional drawing which shows embodiment of the adhesive film which has the resin composition layer comprised with the resin composition of this invention. It is sectional drawing which shows an example of the manufacturing method of a semiconductor device. It is sectional drawing which shows an example of the manufacturing method of a multilayer circuit board. It is a side view which shows the resin composition layer of the adhesive film shown in FIG.

  Hereinafter, the resin composition, adhesive film, semiconductor device, multilayer circuit board, and electronic component of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  The resin composition of the present invention is used when a first adherend and a second adherend are joined, and constitutes a resin composition layer provided on the first adherend. However, in the following embodiments, a case where a semiconductor chip and a circuit board are bonded together and a case where the circuit boards are bonded together will be described.

  Moreover, the form of the resin composition of this invention is not specifically limited, For example, liquid form, a film form, etc. are mentioned. In the following embodiments, a case where a resin composition is applied to an adhesive film will be described as a representative example.

<Adhesive film>
FIG. 1 is a cross-sectional view showing an embodiment of an adhesive film having a resin composition layer composed of the resin composition of the present invention, and FIG. 4 is a side view showing the resin composition layer of the adhesive film shown in FIG. .

  In the following description, the left side in FIGS. 1 and 4 is “left”, the right side is “right”, the upper side is “upper”, and the lower side is “lower”.

  As shown in FIG. 1, an adhesive film 1 a is provided on a base film 3, a resin composition layer 1 that is provided on the base film 3 and forms a film composed of a resin composition, and on the resin composition layer 1. And a cover film 2 provided. That is, the resin composition layer 1 is installed between the cover film 2 and the base film 3 when not in use. The cover film 2 and the base film 3 have a function of protecting the resin composition layer 1 and are peeled off during use. Note that the cover film 2 and the base film 3 may be omitted.

  The resin composition layer 1 of the adhesive film 1a has adhesiveness, is used when mounting a semiconductor chip (semiconductor package) on a circuit board, and is attached to the semiconductor chip and the circuit board. In this specification, the circuit board means, for example, a semiconductor wafer, a rigid board, a flexible board, a rigid flexible board, or the like on which a wiring circuit is formed.

  Moreover, although it is preferable that the resin composition layer 1 has a flux function, it does not need to have a flux function.

  The resin composition layer 1 can be composed of, for example, the following components. That is, the resin composition layer 1 includes (A) a phenol-based curing agent having a weight average molecular weight of 300 to 3000 (hereinafter also referred to as compound (A)), (B) an epoxy resin (hereinafter referred to as compound ( B)), (C) a compound having a flux function (activity) (hereinafter also referred to as compound (C)), and (D) a film-forming property having a weight average molecular weight of 10,000 to 1,000,000. And a resin (hereinafter also referred to as compound (D)).

  Moreover, it is preferable that the resin composition layer 1 contains 3 to 30 weight% of a compound (A), 10 to 80 weight% of a compound (B), and 3 to 50 weight% of a compound (D). Furthermore, it is preferable that 5-25 weight% of compound (A), 15-75 weight% of compound (B), and 15-40 weight% of compound (D) are included.

  When the resin composition layer 1 contains the compound (A), the glass transition temperature of the cured product of the resin composition layer 1 can be increased, and the amount of the phenolic novolak resin that becomes outgas can be reduced. It is possible to improve the ion migration resistance. Moreover, since moderate softness | flexibility can be provided to the resin composition layer 1, it becomes possible to improve the brittleness of the resin composition layer 1. FIG. Furthermore, since appropriate tackiness can be imparted to the resin composition layer 1, the resin composition layer 1 having excellent workability can be obtained.

  The compound (A) is not particularly limited, and examples thereof include phenol novolak resin, cresol novolak resin, bisphenol A type novolak resin, bisphenol F type novolak resin, bisphenol AF type novolak resin and the like. Among them, the amount of the phenolic novolac resin that can satisfy the above-described relationship more easily and can effectively increase the glass transition temperature of the cured product of the resin composition layer 1 and is an outgas. Phenol novolac resin and cresol novolac resin are preferable.

  Although content of the said compound (A) in the resin composition layer 1 is not specifically limited, It is preferable that it is 3-30 weight%, and it is more preferable that it is 5-25 weight%. By making content of a compound (A) into the said range, the glass transition temperature of the hardened | cured material of the resin composition layer 1 is raised effectively, Furthermore, the quantity of the phenol-type novolak resin used as an outgas is reduced effectively. You can do both.

  When the total content of mononuclear to trinuclear in the compound (A) is less than 30% (the total content of four or more nuclei is 70% or more), it will be described later as (B) liquid at 25 ° C. The reactivity with the epoxy resin is reduced, and the unreacted phenolic novolak resin remains in the cured product of the resin composition layer 1, so that the migration resistance may be reduced. Moreover, the resin composition layer 1 becomes brittle, and workability may be reduced. Further, when the total content of mononuclear to trinuclear in the compound (A) is greater than 70% (the total content of four or more nuclear bodies is 30% or less), the resin composition layer 1 is cured. The amount of outgas at the time of the treatment increases, the surface of the support or adherend such as a semiconductor chip or substrate is contaminated, the migration resistance is lowered, and the tackiness of the resin composition layer 1 is further reduced. May increase and the workability of the resin composition layer 1 may deteriorate.

  Although the total content of the binuclear body and the trinuclear body in the compound (A) is not particularly limited, it is preferably 30 to 70%. As a result, the amount of outgas when the resin composition layer 1 is cured increases, and it is possible to more effectively prevent contamination of the surface of a support such as a semiconductor chip or a circuit board or an adherend. . Thereby, the softness | flexibility and flexibility of the resin composition layer 1 can be ensured more effectively.

  The content of the mononuclear substance in the compound (A) is not particularly limited, but is preferably 1% or less, and particularly preferably 0.8% or less. By setting the content of the mononuclear body within the above range, the amount of outgas when the resin composition layer 1 is cured can be reduced, and contamination of a support or adherend such as a semiconductor chip or a circuit board. And migration resistance can be improved.

  Although the weight average molecular weight of the said compound (A) is not specifically limited, It is preferable that it is 300-3000, and it is especially preferable that it is 400-2800. As a result, the amount of outgas when the resin composition layer 1 is cured increases, and it is possible to more effectively prevent contamination of the surface of a support such as a semiconductor chip or a circuit board or an adherend. . Thereby, the softness | flexibility and flexibility of the resin composition layer 1 can be ensured more effectively. Here, the weight average molecular weight can be measured by GPC (gel permeation chromatogram).

  Moreover, the resin composition layer 1 imparts flexibility and flexibility to the resin composition layer 1 by including (B) an epoxy resin that is liquid at 25 ° C. (hereinafter also referred to as compound (B)). Therefore, the resin composition layer 1 having excellent handling properties can be obtained.

  Examples of the compound (B) include bisphenol A type epoxy resins, bisphenol F type epoxy resins, glycidyl amine type epoxy resins, glycidyl ester type epoxy resins, and the like. Among these, the bisphenol A type epoxy resin and the bisphenol are excellent in adhesion of the resin composition layer 1 to a support or adherend such as a semiconductor chip or a substrate, and in addition to excellent mechanical properties after the resin composition layer 1 is cured. F type epoxy resin is preferred.

  The epoxy resin that is liquid at 25 ° C. is more preferably a compound having a viscosity at 25 ° C. of 500 to 50,000 mPa · s, more preferably 800 to 40,000 mPa · s. The thing which is is mentioned. By setting the viscosity at 25 ° C. to the above lower limit value or more, the tackiness of the resin composition layer 1 becomes strong, and the handling property can be prevented from being lowered. Moreover, the softness | flexibility and flexibility of the resin composition layer 1 are securable by making the viscosity in 25 degreeC below the said upper limit.

  In addition, the content of the epoxy resin that is liquid at 25 ° C. is not particularly limited, but is preferably 10 to 80% by weight, and more preferably 15 to 75% by weight. Thereby, the softness | flexibility and flexibility of the resin composition layer 1 can be expressed more effectively. Moreover, thereby, the tackiness of the resin composition layer 1 becomes strong, and it can prevent more effectively that handling property falls.

  Moreover, the resin composition layer 1 contains (C) a compound having a flux function (hereinafter also referred to as compound (C)), whereby the first terminal and the deposition of the support (semiconductor chip, substrate, etc.). Removing the oxide film on the solder surface of at least one of the second terminals of the body (semiconductor chip, substrate, etc.), and in some cases, the first terminal of the support or the second terminal surface of the adherend Since the oxide film can be removed and the first terminal and the second terminal can be securely soldered together, a multilayer circuit board, electronic component, semiconductor device, etc. with high connection reliability can be obtained. Can do.

  The compound (C) is not particularly limited as long as it has a function of removing an oxide film on the solder surface. However, either the carboxyl group or the phenolic hydroxyl group, or both the carboxyl group and the phenol hydroxyl group are used. The compound provided is preferred.

  The compounding amount of the compound (C) is preferably 1 to 30% by weight, and more preferably 3 to 20% by weight. When the compounding amount of the compound (C) is within the above range, the flux function can be improved, and when the resin composition layer 1 is cured, the unreacted compound (A), compound (B) and It is possible to prevent the compound (C) from remaining, and to improve the migration resistance.

  In addition, among the compounds that act as curing agents for epoxy resins, there are (C) compounds having a flux function (hereinafter, such compounds are also referred to as curing agents having a flux function). For example, aliphatic dicarboxylic acids, aromatic dicarboxylic acids and the like that act as curing agents for epoxy resins also have a flux action. In the present invention, such a curing agent having a flux function that acts also as a flux and also acts as a curing agent for an epoxy resin can be suitably used.

  The compound having a carboxyl group (C) having a flux function means a compound having one or more carboxyl groups in the molecule, and may be liquid or solid. In addition, the compound having a phenolic hydroxyl group (C) having a flux function means a compound having one or more phenolic hydroxyl groups in the molecule, and may be liquid or solid. The compound having a carboxyl function and a phenolic hydroxyl group (C) having a flux function refers to a compound in which one or more carboxyl groups and phenolic hydroxyl groups are present in the molecule. Also good.

  Of these, (C) the compound having a flux function having a carboxyl group includes aliphatic acid anhydrides, alicyclic acid anhydrides, aromatic acid anhydrides, aliphatic carboxylic acids, aromatic carboxylic acids, and the like. It is done.

  Examples of the aliphatic acid anhydride according to the compound having a carboxyl group (C) having a flux function include succinic anhydride, polyadipic acid anhydride, polyazeline acid anhydride, and polysebacic acid anhydride.

  Examples of the alicyclic acid anhydride relating to the compound having the carboxyl group (C) having a flux function include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylhymic anhydride, hexahydrophthalic anhydride, tetrahydroanhydride Examples include phthalic acid, trialkyltetrahydrophthalic anhydride, and methylcyclohexene dicarboxylic acid anhydride.

  (C) Compound aromatic acid anhydride having a flux function with carboxyl group includes phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic anhydride, ethylene glycol bistrimellitate, glycerol tris Trimellitate and the like.

  Examples of the aliphatic carboxylic acid related to the compound having the carboxyl group (C) having a flux function include, for example, a compound represented by the following general formula (2a), formic acid, acetic acid, propionic acid, butyric acid, valeric acid, and pivalic acid. Examples include caproic acid, caprylic acid, lauric acid, myristic acid, palmitic acid, stearic acid, acrylic acid, methacrylic acid, crotonic acid, oleic acid, fumaric acid, maleic acid, oxalic acid, malonic acid, and succinic acid.

_{HOOC- (CH 2) n -COOH (} 2a)
(In formula (2a), n represents an integer of 1 or more and 20 or less.)

  Examples of the aromatic carboxylic acid related to the compound having the carboxyl group (C) having a flux function include benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, hemimellitic acid, trimellitic acid, trimesic acid, merophanic acid, and planitic acid. , Pyromellitic acid, meritic acid, xylic acid, hemelic acid, mesitylene acid, prenicylic acid, toluic acid, cinnamic acid, salicylic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2, 5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3,5-dihydroxybenzoic acid, gallic acid (3,4,5-trihydroxybenzoic acid), 1,4-dihydroxy-2-naphthoic acid, Naphthoic acid derivatives such as 3,5-dihydroxy-2-naphthoic acid, phenolphthaline, diphen Lumpur acid.

  Of these compounds having the carboxyl group (C) having the flux function, the activity of the compound having the flux function (C), the amount of outgas generated when the resin composition layer 1 is cured, and the resin after curing The compound represented by the general formula (2a) is preferable from the viewpoint that the elastic modulus of the composition layer 1 and the glass transition temperature are well balanced. And among the compounds represented by the general formula (2a), the compound in which n in the formula (2a) is 3 to 10 suppresses an increase in the elastic modulus in the resin composition layer 1 after curing. It is particularly preferable in that the adhesion between the support such as a semiconductor chip and a substrate and the adherend can be improved.

Among the compounds represented by the general formula (2a), examples of the compound in which n in the formula (2a) is 3 to 10 include, for example, n = 3 glutaric acid (HOOC— (CH ₂ ) ₃ —COOH), n = 4 adipic acid (HOOC— (CH ₂ ) ₄ —COOH), n = 5 pimelic acid (HOOC— (CH ₂ ) ₅ —COOH), n = 8 sebacic acid (HOOC— (CH ₂ ) ₈ -COOH) and of _{n = 10 HOOC- (CH 2)} 10 -COOH- , and the like.

  Examples of the compound having a phenolic hydroxyl group (C) having a flux function include phenols, and specifically, for example, phenol, o-cresol, 2,6-xylenol, p-cresol, m-cresol, o-ethylphenol, 2,4-xylenol, 2,5 xylenol, m-ethylphenol, 2,3-xylenol, meditol, 3,5-xylenol, p-tertiarybutylphenol, catechol, p-tertiaryamylphenol, Phenolic hydroxyl groups such as resorcinol, p-octylphenol, p-phenylphenol, bisphenol A, bisphenol F, bisphenol AF, biphenol, diallyl bisphenol F, diallyl bisphenol A, trisphenol, tetrakisphenol Monomers or the like having the like.

  A compound having either a carboxyl group or a phenol hydroxyl group as described above, or a compound having both a carboxyl group and a phenol hydroxyl group is incorporated three-dimensionally by reaction with an epoxy resin.

  Therefore, from the viewpoint of improving the formation of a three-dimensional network of epoxy resin after curing, (C) as a compound having a flux function, a flux function having a flux action and acting as a curing agent for the epoxy resin. It is preferable to use a curing agent having As a curing agent having a flux function, for example, one or more phenolic hydroxyl groups that can be added to an epoxy resin in one molecule and one or more bonded directly to an aromatic group that exhibits a flux action (reduction action) And a compound having a carboxyl group. Examples of the curing agent having such a flux function include 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, gentisic acid (2,5-dihydroxybenzoic acid), 2,6-dihydroxybenzoic acid, 3, Benzoic acid derivatives such as 4-dihydroxybenzoic acid and gallic acid (3,4,5-trihydroxybenzoic acid); 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3, Examples thereof include naphthoic acid derivatives such as 7-dihydroxy-2-naphthoic acid; phenolphthaline; and diphenolic acid. These may be used alone or in combination of two or more.

  Among these, it is preferable to use 2,3-dihydroxybenzoic acid, gentisic acid, and phenolphthaline, which are excellent in the effect of removing the oxide film on the solder surface and the reactivity with the epoxy resin.

  Moreover, 1-30 weight% is preferable and, as for the compounding quantity of the hardening | curing agent which has a flux function in the resin composition layer 1, 3-20 weight% is especially preferable. When the blending amount of the curing agent having a flux function in the resin composition layer 1 is within the above range, the flux function of the resin composition layer 1 can be improved, and an epoxy is contained in the resin composition layer 1. It is possible to prevent the curing agent having an unreacted flux function with the resin from remaining. Note that migration occurs when a curing agent having an unreacted flux function remains.

  The compounding ratio of the compound (B) and the compound (C) is not particularly limited, but ((B) / (C)) is preferably 0.5 to 12.0, and 2.0 to 10. Particularly preferred is 0. By setting ((B) / (C)) to the above lower limit value or more, uncured compound (C) can be reduced when the resin composition layer 1 is cured, thereby improving migration resistance. can do. Moreover, when it makes it the said upper limit or less, when hardening the resin composition layer 1, since an unreacted compound (B) can be reduced, migration resistance can be improved.

  Moreover, it becomes easy to make it into a film state by the resin composition layer 1 containing the film-forming resin which improves the film-forming property of the resin composition layer 1 (D). Further, the mechanical properties of the resin composition layer 1 are also excellent.

  Examples of the film-forming resin (D) include (meth) acrylic resins, phenoxy resins, polyester resins, polyurethane resins, polyimide resins, siloxane-modified polyimide resins, polybutadiene, polypropylene, styrene-butadiene-styrene copolymers, Styrene-ethylene-butylene-styrene copolymer, polyacetal resin, polyvinyl butyral resin, polyvinyl acetal resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer, acrylonitrile-butadiene -Styrene copolymer, polyvinyl acetate, nylon and the like. These may be used alone or in combination of two or more. Among these, as the (D) film-forming resin, it is preferable to use at least one selected from the group consisting of (meth) acrylic resins, phenoxy resins, and polyimide resins.

  The weight average molecular weight of the film-forming resin (D) is not particularly limited, but is preferably 10,000 or more, more preferably 20,000 to 1,000,000, still more preferably 30,000 to 900,000. When the weight average molecular weight is within the above range, the film-forming property of the resin composition layer 1 can be further improved.

  The content of the film-forming resin (D) is not particularly limited, but is preferably 3 to 50% by weight in the resin composition layer 1, more preferably 15 to 40% by weight, and 20 to 20%. 35% by weight is more preferred. When the content is within the above range, the fluidity of the resin composition layer 1 can be suppressed, and the handling of the resin composition layer 1 becomes easy.

  Moreover, the resin composition layer 1 may further contain a curing accelerator. A hardening accelerator can be suitably selected according to the kind etc. of curable resin. As the curing accelerator, for example, an imidazole compound having a melting point of 150 ° C. or higher can be used. When the melting point of the curing accelerator used is 150 ° C. or higher, the solder component constituting the solder bump moves to the surface of the internal electrode provided on the semiconductor chip before the curing of the resin composition layer 1 is completed. And the electrical connection between the internal electrodes can be improved. Examples of the imidazole compound having a melting point of 150 ° C. or higher include 2-phenyl-4-methylimidazole, 2-phenylhydroxyimidazole, 2-phenyl-4-methylhydroxyimidazole, and the like. They can be used in combination.

Although content of the said hardening accelerator in the resin composition layer 1 is not specifically limited, It is preferable that it is 0.005 to 10 weight%, and it is more preferable that it is 0.01 to 5 weight%. Thereby, the function as a curing accelerator can be exhibited more effectively, the curability of the resin composition layer 1 can be improved, and the melt viscosity of the resin at the melting temperature of the solder component constituting the solder bump can be increased. A good solder joint structure can be obtained without becoming too high. Moreover, the preservability of the resin composition layer 1 can be further improved.
These curing accelerators may be used alone or in combination of two or more.

  The resin composition layer 1 may further include a silane coupling agent. By including the silane coupling agent, the adhesion of the resin composition layer 1 to a support such as a semiconductor chip or a substrate or an adherend can be enhanced. As the silane coupling agent, for example, an epoxy silane coupling agent, an aromatic-containing aminosilane coupling agent and the like can be used. These may be used alone or in combination of two or more. The blending amount of the silane coupling agent may be appropriately selected, but is preferably 0.01 to 10% by weight, more preferably 0.05 to 5% by weight, based on the entire resin composition. More preferably, it is 0.1 to 2% by weight.

  The resin composition layer 1 may further include an inorganic filler. Thereby, the linear expansion coefficient of the resin composition layer 1 can be reduced, and thereby the reliability can be improved.

  Examples of the inorganic filler include silver, titanium oxide, silica, mica, and the like. Among these, silica is preferable. Moreover, as a shape of a silica filler, although there exists crushing silica and spherical silica, spherical silica is preferable.

  The average particle diameter of the inorganic filler is not particularly limited, but is preferably 0.01 μm or more and 20 μm or less, and more preferably 0.1 μm or more and 5 μm or less. By setting it as the said range, aggregation of a filler can be suppressed in the resin composition layer 1, and an external appearance can be improved.

  Although content of the said inorganic filler is not specifically limited, It is preferable that it is 0.1-85 weight% with respect to the whole resin composition layer 1, and it is more preferable that it is 20-80 weight%. By setting the amount within the above range, the difference in linear expansion coefficient between the cured resin composition layer 1 and the contacted body is reduced, and the stress generated during thermal shock can be reduced. Can be more reliably suppressed. Furthermore, since it can suppress that the elasticity modulus of the resin composition layer 1 after hardening becomes high too much, the reliability of a semiconductor device rises.

  A varnish obtained by mixing each resin component as described above in a solvent is applied onto a base material (base film 3) subjected to a peeling treatment such as a polyester sheet, and is substantially a solvent at a predetermined temperature. The resin composition layer 1 can be obtained by drying to such an extent that it does not contain. The solvent used here is not particularly limited as long as it is inert to the components used, but ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, DIBK (diisobutyl ketone), cyclohexanone, DAA (diacetone alcohol), etc. , Aromatic hydrocarbons such as benzene, xylene, toluene, alcohols such as methyl alcohol, ethyl alcohol, isopropyl alcohol, n-butyl alcohol, methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, etc. Cellosolve, NMP (N-methyl-2-pyrrolidone), THF (tetrahydrofuran), DMF (dimethylformamide), DBE (dibasic acid ester), EEP (3-ethoxypropionic acid ester) Le), DMC (dimethyl carbonate), etc. is preferably used. The amount of the solvent used is preferably in the range where the solid content of the components mixed in the solvent is 10 to 60% by weight.

  The resin composition layer 1 thus obtained has a flux function and requires solder connection between the semiconductor chip and the circuit board, the circuit board and the circuit board, and the semiconductor chip and the semiconductor chip. It can be suitably used in connection of members.

  Here, in the present embodiment, a plurality of alignment marks 46 are provided on the circuit board 4 in the vicinity of the edge as a pattern used for alignment between the circuit board 4 and the semiconductor chip 5 as shown in FIG. It has been. Similarly, a plurality of alignment marks 52 are provided on the semiconductor chip 5 as patterns used for alignment between the circuit board 4 and the semiconductor chip 5 as shown in FIG. .

  In the step of bonding the semiconductor chip 5 and the circuit board 4 with the resin composition layer 1, first, the resin composition layer 1 is attached to the circuit board 4 or the semiconductor chip 5. When the resin composition layer 1 is attached to the circuit board 4, the pad portion 44 (concave portion) and the alignment mark 46 are filled with the resin composition layer 1. Further, when the resin composition layer 1 is attached to the semiconductor chip 5, the solder bumps 51 (protrusions) and the alignment marks 52 are filled with the resin composition layer 1. Hereinafter, a case where the resin composition layer 1 is bonded to the semiconductor chip 5 will be described as a representative.

  Next, the alignment mark 46 of the circuit board 4 and the alignment mark 52 of the semiconductor chip 5 are made to coincide with each other when viewed from the thickness direction of the circuit board 4 or the semiconductor chip 5, whereby the semiconductor chip 5 is aligned with the circuit board 4. Perform position alignment. Thus, by aligning the circuit board 4 and the semiconductor chip 5 using the alignment marks 46 and 52, the circuit board 4 and the semiconductor chip 5 can be joined with high positional accuracy. As a result, the reliability of the semiconductor device can be made higher.

  In the circuit board 4, instead of the alignment mark 46, for example, a predetermined part of the circuit board 4 such as the pad portion 44 (concave portion) shown in FIG. 2 can be used as the alignment mark. Similarly, in the semiconductor chip 5, instead of the alignment mark 52, for example, a predetermined part of the semiconductor chip 5 such as the solder bump 51 (protrusion) shown in FIG. 2 can be used as the alignment mark. That is, the pattern used for the alignment between the circuit board 4 and the semiconductor chip 5 is not limited to the alignment marks 46 and 52 dedicated to the alignment, but, for example, electrodes, bumps, wiring patterns (wirings), pads, etc. Part (for example, bonding pad, electrode pad), dicing line, and the like.

  When the average thickness of the resin composition layer 1 is t [μm] and the absorption coefficient of the resin composition layer 1 in light having a wavelength of 800 nm is α [1 / μm], the resin composition layer 1 is represented by the following (1). It is comprised so that Formula and (2) Formula may be satisfy | filled.

α × t ≦ −log ₁₀ (0.05) (1)
1 ≦ t ≦ 200 (2)

  By satisfy | filling said Formula (1) and Formula (2), the surface by the side of the circuit board 4 (resin composition layer 1) of the semiconductor chip 5 can be favorably visually recognized through the resin composition layer 1. FIG. Thereby, when installing the semiconductor chip 5 on the circuit board 4 through the resin composition layer 1, the alignment mark 52 formed on the semiconductor chip 5 can be visually recognized favorably. Thereby, alignment with the circuit board 4 and the semiconductor chip 5 can be performed correctly. As a result, the pad portion 44 of the circuit board 4 and the corresponding solder bump 51 of the semiconductor chip 5 can be accurately aligned, and a highly reliable semiconductor device can be manufactured.

On the other hand, if one of the above equations (1) and (2) is not satisfied, that is, if “α × t” is greater than −log ₁₀ (0.05), the circuit of the semiconductor chip 5 The surface on the substrate 4 side cannot be sufficiently recognized, and the circuit substrate 4 and the semiconductor chip 5 cannot be accurately aligned.

  In addition, when the average thickness t of the resin composition layer 1 is less than 1 μm, a gap is generated between the circuit board 4 and the semiconductor chip 5, and there is a possibility that poor adhesion between the circuit board 4 and the semiconductor chip 5 occurs. . On the other hand, when the average thickness t of the resin composition layer 1 exceeds 200 μm, it is difficult to select a constituent material of the resin composition layer 1 that satisfies the above formula (1).

  In addition, although the average thickness t of the resin composition layer 1 will not be specifically limited if it is 1-200 micrometers, it is preferable that it is 3-180 micrometers, and it is more preferable that it is 5-160 micrometers.

Further, the value on the right side of the above equation (1), that is, the upper limit value of “α × t” is “−log ₁₀ (0.05)” in the present embodiment, but “−log ₁₀ (0.1)”. ) ", And more preferably" -log ₁₀ (0.15) ". Thereby, when installing the semiconductor chip 5 on the circuit board 4 through the resin composition layer 1, the alignment mark 52 formed on the semiconductor chip 5 can be visually recognized still more favorably.

The lower limit value of “α × t” is not particularly limited, but is preferably “−log ₁₀ (0.995)”, and more preferably “−log ₁₀ (0.99)”. That is, it is preferable that the resin composition layer 1 is further configured to satisfy the formula “−log ₁₀ (0.995) ≦ α × t”, and “−log ₁₀ (0.99) ≦ α ×”. It is more preferable that the lens is configured to satisfy the expression “t”.

  If the value of “α × t” is smaller than the lower limit value, it is necessary to make at least one of α and t very small. When t is made small, between the circuit board 4 and the semiconductor chip 5, There is a possibility that an air gap is generated, resulting in poor adhesion between the circuit board 4 and the semiconductor chip 5. When α is made small, it is difficult to select a constituent material for the resin composition layer 1.

The absorption coefficient α of the resin composition layer 1 is preferably 1.08 × 10 ^{−5 to} 1.3 [1 / μm], and 2.18 × 10 ⁻⁵ to 1 [1 / μm]. It is more preferable that Thereby, the alignment mark 52 formed on the semiconductor chip 5 can be favorably visually recognized through the resin composition layer 1.

  In this specification, the absorption coefficient is a constant indicating the degree to which the medium absorbs the light when the light is incident on the medium. It is a value determined by the wavelength of.

Hereinafter, the formulas (1) and (2) will be described in detail.
As shown in FIG. 4, when the resin composition layer 1 is irradiated with light, the amount of light incident on the resin composition layer 1 (radiation divergence) is I _0, and the light transmitted through the resin composition layer 1 When the amount is I ₁ and the light transmittance in the thickness direction of the resin composition layer 1 is T, the following equation (A) can be derived.
T = I ₁ / I ₀ = 10 ^{−α · t} (A)

  In order to accurately align the circuit board 4 and the semiconductor chip 5, it is necessary to increase the transmittance T.

  In order to increase the transmittance T, as can be understood from the above equation (A), “α × t” may be decreased.

Further, the following equation (B) can be derived from the above equation (A).
α × t = −log ₁₀ (T) (B)

Here, the relationship between T and “−log ₁₀ (T)” indicates that when −log ₁₀ (T) is about 1.3 ((= −log ₁₀ (0.05)) or less, the transmittance T rapidly increases. In other words, when -log ₁₀ (T) is larger than 1.3, the transmittance T is rapidly decreased.

Therefore, the transmittance T can be increased by setting “α × t” to −log ₁₀ (0.05) or less, that is, by satisfying the above expression (1).

  As a result of intensive studies, the present inventor found the optimum value of the thickness t to satisfy the above expression (1), and obtained the above expression (2).

  By configuring the resin composition layer 1 so as to satisfy the above formulas (1) and (2), a semiconductor device having excellent reliability can be obtained as described above.

  Further, the surface roughness Ra (specified in JIS B 0601) of the resin composition layer 1 is not particularly limited, but is preferably 10 to 1000 nm. Thereby, the circuit board 4 and the semiconductor chip 5 can be more reliably joined.

  By using such an adhesive film 1a, the surface of the semiconductor chip 5 on the circuit board 4 side can be satisfactorily viewed through the resin composition layer 1, whereby the semiconductor chip 5 and the circuit board 4 are In the bonding step, when the circuit board 4 is placed on the semiconductor chip 5 through the resin composition layer 1, the alignment mark 52 formed on the semiconductor chip 5 can be seen well. As a result, the semiconductor chip 5 and the circuit board 4 can be accurately aligned.

<< Semiconductor Device Manufacturing Method and Semiconductor Device >>
Next, a method for manufacturing a semiconductor device and a semiconductor device using the resin composition (adhesive film) of the present invention will be described.

FIG. 2 is a cross-sectional view showing an example of a method for manufacturing a semiconductor device.
As shown in FIG. 2, a circuit board 4 having a base material 41, a wiring circuit 42, an insulating portion 43, and a pad portion 44 is prepared (FIG. 2A).

  The average thickness of the wiring circuit 42 on the circuit board 4 is preferably 1 to 50 μm, and more preferably 5 to 30 μm.

  The distance between the centers of the adjacent wiring circuits 42 is preferably 1 to 500 μm, and more preferably 5 to 300 μm.

On the other hand, the semiconductor chip 5 provided with the solder bumps 51 is prepared.
The above resin composition layer 1 is laminated (attached) so as to cover the entire surface of the semiconductor chip 5 (FIG. 2B). Thereby, the solder bump 51 and the alignment mark 52 are embedded in the resin composition layer 1.

  The resin composition layer 1 is used by being cut into the same size as the semiconductor chip 5 by punching or cutting.

  The laminating condition is that the pasting temperature T is preferably 60 to 150 ° C., and the pressure P applied to the adhesive film is preferably 0.2 to 1.0 MPa.

  The lamination is preferably performed under a reduced pressure of 100 kPa or less, more preferably 80 kPa or less.

  Examples of the method of laminating the resin composition layer 1 on the semiconductor chip 5 include a roll laminator, a flat plate press, a wafer laminator and the like. Among these, it is preferable to use a wafer laminator.

  Next, the semiconductor chip 5 and the circuit board 4 are aligned. That is, the alignment mark 52 of the semiconductor chip 5 and the alignment mark 46 of the circuit board 4 are matched with each other when viewed from the thickness direction of the circuit board 4 or the semiconductor chip 5. Then, the semiconductor chip 5 and the circuit board 4 are temporarily pressure-bonded via the resin composition layer 1 to fix the semiconductor chip 5 on the circuit board 4 (FIG. 2C). A method for temporary pressure bonding is not particularly limited, but a pressure bonding machine, a flip chip bonder, or the like can be used. The conditions for temporary pressure bonding are not particularly limited, but the temperature is preferably 40 to 200 ° C, particularly preferably 60 to 180 ° C. The time is preferably from 0.1 to 60 seconds, particularly preferably from 1 to 60 seconds. Furthermore, the pressure is preferably from 0.1 to 2.0 MPa, particularly preferably from 0.3 to 1.5 MPa. As a result, the semiconductor chip 5 can be securely temporarily bonded to the circuit board 4.

  Next, the solder bump 51 is melted to form a solder connection portion 511 to be soldered to the pad portion 44 (FIG. 2D).

  Although the conditions for solder connection depend on the type of solder used, for example, in the case of Sn3.5Ag, the temperature is preferably 220 to 260 ° C, particularly preferably 230 to 250 ° C. The time is preferably 5 to 500 seconds, particularly preferably 10 to 100 seconds. Furthermore, the pressure is preferably from 0.1 to 2.0 MPa, particularly preferably from 0.3 to 1.5 MPa. The conditions for solder connection can be appropriately selected depending on the solder used.

  This solder bonding is preferably performed under conditions such that the resin composition layer 1 is cured after the solder bumps 51 are melted. That is, the solder bonding is preferably performed under the condition that the solder bump 51 is melted but the curing reaction of the resin composition layer 1 does not proceed so much. Thereby, the shape of the solder connection part at the time of soldering can be made into the stable shape which is excellent in connection reliability.

  Next, the resin composition layer 1 is heated and cured. The conditions for curing are not particularly limited, but the temperature is preferably from 130 to 220 ° C, particularly preferably from 150 to 200 ° C. The time is preferably 30 to 500 minutes, particularly preferably 60 to 180 minutes. Further, the resin composition layer 1 may be cured under a pressurized atmosphere. Although it does not specifically limit as a pressurization method, It can carry out by introduce | transducing pressurized fluids, such as nitrogen and argon, in oven. The applied pressure is preferably 0.1 to 10 MPa, particularly preferably 0.5 to 5 MPa. Thereby, the void in the resin composition layer 1 can be reduced.

Next, bumps 45 for mounting the semiconductor device are formed on the mother board (FIG. 2E). The bump 45 is not particularly limited as long as it is a metal material having conductivity, but solder having excellent conductivity and stress relaxation properties is preferable. The method for forming the bump 45 is not particularly limited, but can be formed by connecting solder balls using a flux.
In this way, a semiconductor device 10 in which the circuit board 4 and the semiconductor chip 5 are bonded with the cured product 1 ′ of the resin composition layer 1 as shown in FIG. 2E can be obtained.

<< Multilayer Circuit Board Manufacturing Method and Multilayer Circuit Board >>
Next, the manufacturing method of a multilayer circuit board using the resin composition (adhesive film) of this invention and a multilayer circuit board are demonstrated.

FIG. 3 is a cross-sectional view showing an example of a method for manufacturing a multilayer circuit board.
First, a circuit board 6 having a base 61, a wiring circuit 62, an insulating part 63, and a pad part 64 is prepared (FIG. 3A).

  On the other hand, a circuit board 7 having a substrate 71, a wiring circuit 72, an insulating part 73, a solder bump 75, and a pad part 74 is prepared, and the resin composition layer 1 is subjected to the same conditions as described above so as to cover the entire surface of the circuit board 7. Is laminated (attached) (FIG. 3B).

  Next, the circuit board 6 and the circuit board 7 are aligned. That is, the pad portions 64 of the circuit board 6 and the solder bumps 75 of the circuit board 7 are matched when viewed from the thickness direction of the circuit board 6 or the circuit board 7. Then, the circuit board 6 and the circuit board 7 are temporarily pressure-bonded under the same conditions as described above (FIG. 3C).

  Next, the solder bumps 75 are melted under the same conditions as the above-described solder joints to form solder joint portions 711 that are soldered to the respective pad portions 64 (FIG. 3D).

  Thereafter, each resin composition layer 1 is cured under the same conditions as those for the resin composition layer 1 described above, and the circuit board 6 and the circuit board 7 as shown in FIG. The multilayer circuit board 100 bonded with the cured product 1 ′ of the layer 1 can be obtained.

  In addition, although this embodiment described about embodiment which laminates | stacks two layers of circuit boards, the number of the board | substrates laminated | stacked may be three or more layers.

  In addition, an electronic component in which the semiconductor chip and the semiconductor chip are bonded with the cured product 1 ′ of the resin composition layer 1 can be obtained by the same method as described above.

  As mentioned above, although the resin composition, adhesive film, semiconductor device, multilayer circuit board, and electronic component of the present invention have been described based on the illustrated embodiment, the present invention is not limited to this, and the configuration of each part is It can be replaced with any configuration having a similar function. In addition, any other component may be added to the present invention.

  In the above-described embodiment, the case where the resin composition is applied to the adhesive film has been described. However, the present invention is not limited thereto, and the resin composition may be in a liquid state, for example. The resin composition may be provided on the adherend by, for example, spin coating or screen printing.

  Further, for example, a method for manufacturing a semiconductor device, a multilayer circuit board, and an electronic component is not limited to the above method.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example and a comparative example, this invention is not limited to this.

[1] Manufacture of Resin Composition Layer The resin composition layers (adhesive films) of each Example and each Comparative Example were manufactured as follows.

Example 1
<Preparation of material for resin composition layer>
30.0 parts by weight of a phenol novolac resin (Sumitomo Bakelite, PR55617), 45.0 parts by weight of a bisphenol A type epoxy resin (Dainippon Ink and Chemicals, EPICLON-840S), and bisphenol A as a film-forming resin Type phenoxy resin (manufactured by Toto Kasei Co., Ltd., YP-50), 24.4 parts by weight, 2-phenyl-4-methylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., 2P4MZ) as a curing accelerator, 0.1 part by weight, and silane cup As a ring agent, 0.5 part by weight of β- (3,4 epoxycyclohexyl) ethyltrimethoxysilane (KBE-403, manufactured by Shin-Etsu Chemical Co., Ltd.) was dissolved in methyl ethyl ketone to prepare a resin varnish having a resin concentration of 50%. .

<Manufacture of resin composition layer>
The obtained resin varnish was applied to a base polyester film (base film, manufactured by Toray Industries, Inc., trade name Lumirror) to a thickness of 50 μm, dried at 100 ° C. for 5 minutes, and an average thickness t was A resin composition layer of 25 μm was obtained. The absorption coefficient α of the resin composition layer with respect to light having a wavelength of 800 nm is 4.4 × 10 ⁻⁴ [1 / μm], α × t is 1.1 × 10 ⁻² , and surface roughness Ra (specified in JIS B 0601). ) Was 60 nm.

(Example 2)
In the production of the resin varnish, Example 1 was carried out except that 50 parts by weight of spherical silica filler (manufactured by Admatechs, SC1050, average particle size of 0.25 μm) as an inorganic filler was added to 50 parts by weight of the resin varnish of Example 1. The resin composition layer was produced in the same manner as described above. The absorption coefficient α of the resin composition layer is 1.1 × 10 ⁻² [1 / μm], α × t is 2.76 × 10 ⁻¹ , and the surface roughness Ra (specified in JIS B 0601) is 150 nm. Met.

Example 3
In the production of the resin varnish, 30.0 parts by weight of phenol novolak resin (manufactured by Sumitomo Bakelite Co., Ltd., PR55617) was changed to 15.0 parts by weight, and phenolphthaline (Tokyo Kasei), which is a compound having a flux function, was further changed. A resin composition layer was produced in the same manner as in Example 1 except that 15.0 parts by weight was added. The absorption coefficient α of the resin composition layer is 4.4 × 10 ⁻⁴ [1 / μm], α × t is 1.1 × 10 ⁻² , and the surface roughness Ra (specified in JIS B 0601) is 60 nm. Met.

Example 4
In the production of the resin varnish, Example 3 except that 20 parts by weight of a spherical silica filler (manufactured by Admatechs, SC1050, average particle size of 0.25 μm) as an inorganic filler was added to 80 parts by weight of the resin varnish of Example 1. The resin composition layer was produced in the same manner as described above. The absorption coefficient α of the resin composition layer is 7.0 × 10 ⁻³ [1 / μm], α × t is 1.74 × 10 ⁻¹ , and the surface roughness Ra (specified in JIS B 0601) is 150 nm. Met.

(Example 5)
In the production of the resin varnish, Example 3 except that 50 parts by weight of a spherical silica filler (manufactured by Admatechs, SC1050, average particle size of 0.25 μm) as an inorganic filler was added to 50 parts by weight of the resin varnish of Example 3. The resin composition layer was produced in the same manner as described above. The absorption coefficient α of the resin composition layer is 1.1 × 10 ⁻² [1 / μm], α × t is 2.76 × 10 ⁻¹ , and the surface roughness Ra (specified in JIS B 0601) is 150 nm. Met.

(Example 6)
In the production of the resin varnish, Example 3 except that 80 parts by weight of spherical silica filler (manufactured by Admatechs, SC1050, average particle size of 0.25 μm) as an inorganic filler was added to 20 parts by weight of the resin varnish of Example 3. The resin composition layer was produced in the same manner as described above. The resin composition layer had an absorption coefficient α of 4.0 × 10 ⁻² [1 / μm], α × t of 1.0, and surface roughness Ra (specified in JIS B 0601) of 170 nm.

(Comparative Example 1)
In the production of the resin varnish, Example 1 except that 90 parts by weight of a spherical silica filler (manufactured by Admatechs, SC1050, average particle size 0.25 μm) as an inorganic filler was added to 10 parts by weight of the resin varnish of Example 1. The resin composition layer was produced in the same manner as described above. The resin composition layer had an absorption coefficient α of 8.0 × 10 ⁻² [1 / μm], α × t of 2.0, and a surface roughness Ra (specified in JIS B 0601) of 180 nm.

(Comparative Example 2)
In the production of the resin varnish, Example 3 except that 90 parts by weight of a spherical silica filler (manufactured by Admatechs, SC1050, average particle size 0.25 μm) as an inorganic filler was added to 10 parts by weight of the resin varnish of Example 3. The resin composition layer was produced in the same manner as described above. The resin composition layer had an absorption coefficient α of 8.0 × 10 ⁻² [1 / μm], α × t of 2.0, and a surface roughness Ra (specified in JIS B 0601) of 180 nm.

[2] Evaluation <Evaluation of alignment>
After laminating the resin composition layers with base materials prepared in Examples 1 to 6 and Comparative Examples 1 and 2 on a silicon wafer on which a plurality of semiconductor devices having electrode patterns on the surface were formed, only the base material was peeled off Then, a resin composition layer having a thickness of 25 μm was formed on the silicon wafer. A plurality of resin composition layers were formed for each of Examples 1 to 6 and Comparative Examples 1 and 2. Thereafter, the silicon wafer was placed on a wafer stage of a flip chip bonder (device name: FCB3, manufactured by Panasonic FS), and any 10 semiconductor devices in each of Examples 1 to 6 and Comparative Examples 1 and 2 In FIG. 2, automatic recognition was performed on a predetermined electrode pattern (this electrode pattern functions as an alignment mark), and the number of automatic recognition was counted.

○: All 10 were automatically recognized.
×: An error occurred during automatic recognition with one or more.
The results are as shown in Table 1 below.

  As is clear from Table 1 above, Examples 1 to 6 have good alignment properties, while Comparative Examples 1 and 2 have poor alignment properties.

DESCRIPTION OF SYMBOLS 1a Adhesive film 1 Resin composition layer 1 'Hardened | cured material 2 Cover film 3 Base film 4 Circuit board 41 Base material 42 Wiring circuit 43 Insulation part 44 Pad part 45 Bump 46 Alignment mark 5 Semiconductor chip 51 Solder bump 511 Solder connection part 52 Alignment Mark 6 Circuit board 61 Base material 62 Wiring circuit 63 Insulating part 64 Pad part 7 Circuit board 71 Base material 72 Wiring circuit 73 Insulating part 74 Pad part 75 Solder bump 711 Solder joint part 10 Semiconductor device 100 Multilayer circuit board

Claims (14)

A resin composition that is used when bonding a first adherend and a second adherend, and constitutes a resin composition layer provided on the first adherend,
When the resin composition layer is provided with an average thickness t [μm] and the absorption coefficient of the resin composition layer in light having a wavelength of 800 nm is α [1 / μm], the following formulas (1) and (2) It is comprised so that it may satisfy | fill.
α × t ≦ −log ₁₀ (0.05) (1)
1 ≦ t ≦ 200 (2) The resin composition according to claim 1, wherein the absorption coefficient α is 1.08 × 10 ^{−5 to} 1.3 [1 / μm].   The first adherend is provided with a pattern used for alignment between the first adherend and the second adherend, and the resin composition layer is formed so as to fill the pattern. The resin composition of Claim 1 or 2 to provide.   The resin composition according to claim 3, wherein the pattern includes at least one of an electrode, a bump, a wiring, and a dicing line.   The resin composition according to claim 1, wherein an alignment mark is provided on the first adherend, and the resin composition layer is provided so as to fill the alignment mark.   The resin composition according to any one of claims 1 to 5, comprising an inorganic filler.   The resin composition according to claim 6, wherein the content of the inorganic filler is 0.1 to 85% by weight.   The resin composition according to claim 6 or 7, wherein the inorganic filler contains silica.   The resin composition according to any one of claims 1 to 8, comprising a compound having a flux function.   The resin composition according to any one of claims 1 to 9, wherein the resin composition layer has a surface roughness Ra (as defined in JIS B 0601) of 10 to 1000 nm.   An adhesive film comprising a resin composition layer composed of the resin composition according to claim 1.   A semiconductor device comprising a cured product of the resin composition according to claim 1.   A multilayer circuit board comprising the cured product of the resin composition according to claim 1.   An electronic component comprising a cured product of the resin composition according to claim 1.

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