JP2012049387A - Cleaning fluid and cleaning method of substrate for semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cleaning fluid used in a cleaning process following to a chemical mechanical polishing process of a substrate for a semiconductor device, especially a substrate for a semiconductor device having metal wiring on the surface, exhibiting a sufficient corrosion resistance, and can minimize production of residue and adhesion of residue to the surface of the substrate.SOLUTION: The cleaning fluid used in a cleaning process of a substrate for a semiconductor device following a chemical mechanical polishing process in manufacturing a semiconductor device contains N-acyl-L-cysteine and an organic quarternary ammonium hydroxide represented by general formula (1), and has pH of 1.5-6.5. (R)NOH(1) (where, Ris a hydroxyl group, an alkoxy group, or an alkyl group which may be substituted by halogen, four Rmay be identical or different from each other.)

Description

  The present invention relates to a cleaning liquid for effectively cleaning a substrate surface for a semiconductor device having a metal exposed on the surface after a chemical mechanical polishing step.

  First, a semiconductor device substrate is formed by a chemical mechanical polishing using a polishing slurry made of an aqueous slurry containing fine particles after forming a metal film or interlayer insulating film deposited on a silicon wafer substrate. (Chemical Mechanical Polishing, hereinafter referred to as “CMP”), the surface is flattened, and a new layer is stacked on the flattened surface. In microfabrication of a substrate for a semiconductor device, high-precision flatness in each layer is required, and the importance of planarization by CMP is increasing.

On the other hand, in recent semiconductor device manufacturing processes, wiring (Cu wiring) made of a copper (Cu) film having a low resistance value has been introduced in order to increase the speed and integration of devices.
Cu is suitable for microfabrication due to its good workability, but it is easily oxidized and deteriorated in water, and is easily corroded by acidic components and alkali components. Therefore, oxidation and corrosion of Cu wiring are problematic in the CMP process. . Therefore, conventionally, in CMP of a semiconductor device substrate having Cu wiring, an anticorrosive agent such as benzotriazole or tolyltriazole is added to the polishing agent, and this anticorrosive agent is strongly adsorbed on the Cu surface to form a protective film. By doing so, corrosion of Cu wiring in CMP was suppressed (for example, refer patent document 1).

By the way, the semiconductor device substrate after the CMP process is subjected to a cleaning process in order to remove the Cu wiring and interlayer insulating film shavings generated by the CMP. Corrosion is a problem.
In order to prevent this oxidative deterioration and corrosion, a method of adding an anticorrosive agent to the cleaning liquid used in the cleaning process has been proposed. The anticorrosive agent conventionally used in CMP is a complex of Cu ions eluted from the Cu wiring and complex. There is a problem in that a residue having adhesion to the substrate is generated. On the other hand, when the anticorrosive agent with little residue generation known so far is used, the above-mentioned residue is not generated, but there is a problem that the oxidation deterioration and corrosion of the Cu wiring are insufficiently suppressed. Patent Document 2 discloses a metal corrosion inhibitor containing an amino acid having a thiol group in its molecule such as cysteine, but it was not sufficient in terms of avoiding residue formation.
As described above, no conventional cleaning liquid has been found that can achieve both corrosion resistance and avoidance of residue formation.

Japanese Patent No. 4406554 JP 2003-13266 A

  Under such circumstances, an object of the present invention is to be used in a cleaning process after a CMP process in a semiconductor device substrate, particularly a semiconductor device substrate having a metal wiring on the surface, and has sufficient anticorrosive properties against the metal wiring, It is to provide a cleaning liquid capable of suppressing generation and adhesion of residues to the substrate surface.

That is, the present invention relates to the following inventions.
<1> A cleaning liquid used in a semiconductor device substrate cleaning process performed after a chemical mechanical polishing process in semiconductor device manufacturing, which is represented by N-acyl-L-cysteine and the following general formula (1). A semiconductor device substrate cleaning solution containing an organic quaternary ammonium hydroxide and having a pH of 1.5 or more and less than 6.5.
(R ¹ ) ₄ N ⁺ OH ⁻ (1)
(However, R ¹ represents a hydroxyl group, an alkoxy group, or an alkyl group which may be substituted with halogen, and all four R ^{1 s} may be the same or different from each other.)
<2> The substrate cleaning solution for a semiconductor device according to <1>, wherein the concentration of N-acyl-L-cysteine in the cleaning solution is 1 to 5000 ppm by mass.
<3> The semiconductor device substrate cleaning solution according to <1> or <2>, wherein the N-acyl-L-cysteine is N-acetyl-L-cysteine.
<4> R ¹ in the organic quaternary ammonium hydroxide represented by the general formula (1) may be substituted with a hydroxyl group, an alkoxy group having 1 to 3 carbon atoms, or a halogen atom. The substrate cleaning solution for a semiconductor device according to claim 1, which is an alkyl group of 3.
The substrate cleaning liquid for a semiconductor device according to any one of <1> to <3>.
<5> The semiconductor device substrate cleaning solution according to any one of <1> to <4>, wherein the cleaning solution contains an organic acid and a sulfonic acid type anionic surfactant.
<6> The substrate cleaning solution for a semiconductor device according to any one of <1> to <5>, wherein the organic acid is an organic acid having 1 to 10 carbon atoms having at least one carboxyl group.
<7> The cleaning solution for a semiconductor device substrate according to <6>, wherein the organic acid is at least one selected from the group consisting of oxalic acid, citric acid, tartaric acid, malic acid, lactic acid, and acetic acid.
<8> The sulfonic acid type anionic surfactant is alkyl sulfonic acid and its salt, alkyl benzene sulfonic acid and its salt, alkyl diphenyl ether disulfonic acid and its salt, alkyl methyl tauric acid and its salt, and sulfosuccinic acid diester and its salt. The substrate cleaning solution for a semiconductor device according to any one of <5> to <7>, which is at least one selected from the group consisting of:
<9> A semiconductor for cleaning a semiconductor device substrate having a metal exposed on a surface after chemical mechanical polishing using the semiconductor device substrate cleaning liquid according to any one of <1> to <8>. Device substrate cleaning method.
<10> The method for cleaning a semiconductor device substrate according to <9>, wherein the metal is copper and / or an alloy containing copper.

  By using the cleaning liquid of the present invention, the semiconductor device substrate cleaning process after the CMP process has sufficient anticorrosive properties against metal wiring, and the generation of residues and the adhesion of residues to the substrate surface can be suppressed. .

The present invention relates to a cleaning liquid used in a semiconductor device substrate cleaning step performed after a chemical mechanical polishing (CMP) step in semiconductor device manufacturing, and includes N-acyl-L-cysteine and the following general formula (1). And a substrate cleaning solution for semiconductor devices having a pH of 1.5 or more and less than 6.5.
(R ¹ ) ₄ N ⁺ OH ⁻ (1)
(However, R ¹ represents a hydroxyl group, an alkoxy group, or an alkyl group which may be substituted with halogen, and all four R ^{1 s} may be the same or different from each other.)

  The cleaning liquid of the present invention contains N-acyl-L-cysteine as an anticorrosive agent, and an organic quaternary ammonium hydroxide represented by the general formula (1) as an essential component as an organic alkali component having a function of enhancing the cleaning effect. However, by adjusting the pH range so that the actions of both components are compatible, the metal wiring has sufficient anticorrosion properties and suppresses generation of residues and adhesion of residues to the substrate surface.

  As the solvent of the cleaning liquid of the present invention, water is used, and it is preferable to use deionized water or ultrapure water in which impurities are reduced as much as possible. In addition, in the range which does not impair the effect of this invention, solvents other than water, such as ethanol, may be included.

  In the cleaning liquid of the present invention, the concentration of N-acyl-L-cysteine is preferably 1 to 5000 ppm by mass, particularly preferably 10 to 2000 ppm by mass. If the concentration of N-acyl-L-cysteine in the cleaning liquid is less than 1 ppm by mass, the anticorrosive effect on the metal wiring may be insufficient, and if it exceeds 5000 ppm by mass, it may cause a residue. Moreover, the improvement of the effect corresponding to the increase in addition amount is not seen, and it is not efficient.

  Examples of N-acyl-L-cysteine used in the cleaning liquid of the present invention include N-acyl-L-cysteine having 2 to 10 carbon atoms, preferably 2 to 5 carbon atoms, of the acyl group. In particular, N-acetyl-L-cysteine having 2 carbon atoms of the acyl group is preferred.

The organic quaternary ammonium hydroxide used in the cleaning liquid of the present invention is represented by the following general formula (1).
(R ¹ ) ₄ N ⁺ OH ⁻ (1)
(However, R ¹ represents a hydroxyl group, an alkoxy group, or an alkyl group which may be substituted with halogen, and all four R ^{1 s} may be the same or different from each other.)

As the quaternary ammonium hydroxide, in the general formula (1), R ¹ is a hydroxyl group, an alkoxy group having 1 to 3 carbon atoms, or an alkyl group having 1 to 3 carbon atoms which may be substituted with halogen. Particularly preferred are alkyl groups having 1 to 3 carbon atoms and / or hydroxyalkyl groups having 1 to 3 carbon atoms. The alkyl group of R ¹ is a lower alkyl group having 1 to 3 carbon atoms such as a methyl group, an ethyl group, or a propyl group, and the hydroxyalkyl group is an alkyl group having 1 to 1 carbon atoms such as a hydroxymethyl group, a hydroxyethyl group, or a hydroxypropyl group. 3 lower hydroxyalkyl groups.

  Specific examples of the quaternary ammonium hydroxide include tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, trimethyl (hydroxyethyl) ammonium hydroxide (common name: choline), and triethyl (hydroxyethyl) ammonium hydroxy. And the like.

  Among the above organic alkali components, tetramethylammonium hydroxide (TMAH), trimethyl (hydroxyethyl) ammonium hydroxide (common name: choline) for reasons such as cleaning effect, low metal residue, economy, and stability of cleaning liquid Etc. are particularly preferred. These organic alkali components may be used individually by 1 type, and may use 2 or more types together by arbitrary ratios.

  The content of the quaternary ammonium hydroxide in the cleaning liquid of the present invention is usually 0.001% by mass or more, preferably 0.01% by mass or more with respect to the cleaning liquid in order to sufficiently improve the water rinsing property. More preferably, it is 0.05 mass% or more. However, if importance is attached to high decontamination effect and economic efficiency, the content of the quaternary ammonium hydroxide is usually 30% by mass or less, preferably 10% by mass or less, and more preferably 2% by mass. It is as follows. Note that if the concentration of the quaternary ammonium hydroxide is too high, the decontamination effect may be reduced.

It is essential that the pH of the cleaning liquid of the present invention is 1.5 or more and less than 6.5. Here, the pH suitable for suppressing corrosion of the substrate surface is 2 or more, preferably 3 or more, and particularly suitable for sufficiently removing metal contamination is 6 or less, more preferably 5 or less. It is.
The pH in the cleaning liquid of the present invention can be adjusted by the amount of each component contained in the cleaning liquid.

In addition to the N-acyl-L-cysteine and organic quaternary ammonium hydroxide, the cleaning liquid of the present invention has an organic alkali component other than organic acid and organic quaternary ammonium hydroxide, Components such as a surfactant may be contained as necessary, and it is particularly preferable to contain a sulfonic acid type surfactant as an organic acid and a surfactant.
Hereinafter, components other than these anticorrosives will be described.

Component (A): Organic acid Organic acid (hereinafter sometimes referred to as component (A)) is a general term for organic compounds that exhibit acidity (pH <7) in water, and is a carboxyl group (—COOH) or a sulfo group. An organic compound having an acidic functional group such as (—SO ₃ H), a phenolic hydroxyl group (—ArOH: Ar is an aryl group such as a phenyl group), and a mercapto group (—SH).
Although the organic acid used is not specifically limited, C1-C10 carboxylic acid which has 1 or more of carboxyl groups is preferable. More preferably, it is a C1-C8 carboxylic acid, More preferably, it is a C1-C6 carboxylic acid.
Any carboxylic acid may be used as long as it has one or more carboxyl groups, and monocarboxylic acids, dicarboxylic acids, tricarboxylic acids, and the like can be used as appropriate, and functional groups other than carboxyl groups such as oxycarboxylic acids and aminocarboxylic acids can be used. It may be included.
Among these, oxalic acid, citric acid, tartaric acid, malic acid, lactic acid and acetic acid are particularly preferable.
These organic acids may be used individually by 1 type, and may use 2 or more types together by arbitrary ratios. Moreover, the acid salt of polyvalent organic acid can also be used as a component (A).

  The content of the component (A) in the cleaning liquid of the present invention is usually 0.01% by mass or more, preferably 0.05% by mass or more, more preferably, based on the cleaning liquid in order to sufficiently remove contamination. 0.1 mass% or more. However, if importance is attached to not corroding the substrate surface and being economical, the content of the component (A) is usually 30% by mass or less, preferably 10% by mass or less, and more preferably 2% by mass or less. Even if the concentration of the component (A) is too high, an increase in the effect commensurate with the concentration cannot be obtained.

Component (B): sulfonic acid type anionic surfactant Examples of the sulfonic acid type anionic surfactant (hereinafter sometimes referred to as component (B)) that can be used in the cleaning liquid of the present invention include alkyls. Examples thereof include sulfonic acid and its salt, alkylbenzene sulfonic acid and its salt, alkyldiphenyl ether disulfonic acid and its salt, alkylmethyl tauric acid and its salt, and sulfosuccinic acid diester and its salt.
In addition, a sulfonic acid type anionic surfactant may be used individually by 1 type, and may use 2 or more types together in arbitrary ratios.
Preferred sulfonic acid type anionic surfactants include dodecylbenzenesulfonic acid, dodecanesulfonic acid, and alkali metal salts thereof.
Among these, dodecylbenzenesulfonic acid and its alkali metal salt are preferably used because of the stability of quality and availability.

In the CMP process, which is a pre-process of the cleaning process, polishing is performed by rubbing the substrate against the pad using an abrasive.
The abrasive includes abrasive particles such as colloidal silica (SiO ₂ ), fumed silica (SiO ₂ ), alumina (Al ₂ O ₃ ), and ceria (CeO ₂ ). Such abrasive particles are a major cause of contamination of the semiconductor device substrate.
When the cleaning liquid of the present invention contains a surfactant, the surfactant has a function of dispersing the fine particles adhering to the substrate in the cleaning liquid, so that it exhibits a high cleaning effect against fine particle contamination.

  The content of the surfactant in the cleaning liquid of the present invention is usually 0.0001% by mass or more, preferably 0.0003% by mass or more, more preferably 0.001% by mass or more with respect to the cleaning liquid. However, if importance is placed on suppressing excessive foaming and reducing the load of waste liquid treatment, the content of the surfactant is usually 1% by mass or less, preferably 0.1% by mass or less, more preferably 0.05. Less than mass%. If the concentration of the surfactant is too high, no further effect can be obtained.

  In addition, the surfactant may contain metal impurities such as Na, K, and Fe of about 1 to several thousand mass ppm in a commercially available form. In this case, the surfactant is a metal. It becomes a pollution source. Therefore, it is preferable to purify and use the surfactant so that the content of each metal impurity in the surfactant is usually 10 ppm or less, preferably 1 ppm or less, and more preferably 0.3 ppm or less. As this purification method, for example, a method in which a surfactant is dissolved in water and then passed through an ion exchange resin to capture metal impurities in the resin is suitable. By using the surfactant thus purified, it is possible to obtain a cleaning liquid in which the content of metal impurities is extremely reduced.

Moreover, the cleaning liquid of the present invention may contain components other than the above components (A) and (B) at an arbitrary ratio within a range not impairing the performance.
As other ingredients,
Etching accelerators that can be expected to remove polymers such as hydrogen, argon, nitrogen and other dissolved gases, hydrofluoric acid, ammonium fluoride, BHF (buffered hydrofluoric acid), etc.
Reducing agents such as hydrazine;
Oxidizing agents such as hydrogen peroxide, ozone, oxygen;
Etc.
Note that in a semiconductor device substrate to be cleaned, a metal material such as Cu that reacts with hydrogen peroxide and dissolves may be exposed as wiring. At this time, it is preferable that the cleaning liquid used for cleaning does not substantially contain hydrogen peroxide.

The manufacturing method of the cleaning liquid of the present invention may be a conventionally known method, and can be manufactured by mixing the components of the cleaning liquid.
The mixing order is arbitrary as long as there is no particular problem such as reaction or precipitation, and any two components or three or more components of the cleaning liquid are mixed in advance, and then the remaining components are mixed. You may mix all at once.

In the cleaning liquid of the present invention, the concentrations of N-acyl-L-cysteine, organic quaternary ammonium hydroxide, and other components added as necessary are adjusted so that the concentration is suitable for cleaning. Although it can be manufactured, from the viewpoint of reducing costs during transportation and storage, after manufacturing a cleaning solution containing each component at a high concentration (hereinafter sometimes referred to as “cleaning stock solution”), the solvent It is often used after being diluted with water.
The concentration of each component in this washing stock solution is not particularly limited, but N-acyl-L-cysteine, organic quaternary ammonium hydroxide, other components added as necessary, and these reaction products It is preferably within a range that does not separate or precipitate in the washing stock solution.

  Next, the cleaning method of the present invention will be described.

Examples of semiconductor device substrates to be cleaned include various semiconductor device substrates such as semiconductors, glasses, metals, ceramics, resins, magnetic materials, and superconductors.
Since the cleaning liquid of the present invention can be removed by rinsing in a short time without corroding the metal surface, it has a metal or a metal compound on the surface as wiring and the like, and the semiconductor device substrate is cleaned after the CMP process. In this case, it is particularly preferably applied.

  Here, examples of the metal used for the semiconductor device substrate include W, Cu, Ti, Cr, Co, Zr, Hf, Mo, Ru, Au, Pt, and Ag. Examples thereof include nitrides, oxides, silicides, and the like of these metals. In the cleaning method of the present invention, among these metals and metal compounds, copper and / or an alloy containing copper is a particularly suitable cleaning object.

  The cleaning method of the present invention is performed by a method in which the cleaning liquid of the present invention is brought into direct contact with a semiconductor device substrate.

  The contact method of the cleaning liquid to the substrate is a dip type in which the cleaning tank is filled with the cleaning liquid and the substrate is immersed, a spin type in which the substrate is rotated at high speed while flowing the cleaning liquid from the nozzle onto the substrate, and the cleaning liquid is sprayed on the substrate for cleaning. A spray type etc. are mentioned. As an apparatus for performing such cleaning, there are a batch-type cleaning apparatus that simultaneously cleans a plurality of substrates housed in a cassette, a single-wafer cleaning apparatus that mounts and cleans a single substrate in a holder, and the like. .

  Although the cleaning liquid of the present invention can be applied to any of the above methods, it is preferably used for spin-type or spray-type cleaning because it allows more efficient decontamination in a short time. Further, the present invention can also be suitably applied to a single wafer cleaning apparatus that is desired to shorten the cleaning time and reduce the amount of cleaning liquid used.

  In addition, the cleaning method of the present invention is capable of removing contamination caused by fine particles adhering to the substrate when used in combination with a cleaning method based on physical force, particularly scrub cleaning using a cleaning brush or ultrasonic cleaning with a frequency of 0.5 MHz or higher. This is preferable because it further improves and shortens the cleaning time. In particular, in the cleaning step after the CMP step, scrub cleaning is preferably performed using a resin brush. The material of the resin brush can be arbitrarily selected, but for example, PVA (polyvinyl alcohol) is preferably used.

  Furthermore, washing with water may be performed before and / or after washing according to the present invention.

  In the cleaning method of the present invention, the temperature of the cleaning solution is usually room temperature, but may be heated to about 40 to 70 ° C. within a range not impairing the performance.

  EXAMPLES Next, although an Example and a comparative example are given and this invention is demonstrated more concretely, this invention is not limited by the following Examples, unless the summary is exceeded.

<Preparation of cleaning liquids of Examples and Comparative Examples>
The components shown in Table 1 were placed in a mixing container, and stirred at room temperature and mixed until completely dissolved to prepare cleaning liquids of Examples and Comparative Examples.
In Table 1, the abbreviations of the components in the cleaning liquid are as follows.
"Anti-corrosive ingredient"
NAC: N-acetyl-1-cysteine BTA: benzotriazole TT-LYK: manufactured by Johoku Chemical 2,2 ′-[[(methyl-1H-benzotriazol-1-yl) methyl] imino] bisethanol CBT : Johoku Chemical's Carboxybenzotriazole "Organic Quaternary Ammonium Hydroxide"
TMAH: tetramethylammonium hydroxide “component (B): sulfonic acid type anionic surfactant”
DBS: dodecylbenzenesulfonic acid

<Evaluation of anticorrosive properties and presence of residues>
A 90-nm / 90-nm comb-shaped copper wiring pattern substrate (CMP4-TEG manufactured by Next Generation Semiconductor Material Technology Research Association) was left in each cleaning solution maintained at 25 ° C. for 30 minutes, and then rinsed with ultrapure water for 10 seconds. And the board | substrate for evaluation was obtained by drying by an air blow.
The obtained substrate was observed with a field emission scanning electron microscope (“JSM-6320F” manufactured by JEOL Ltd.) to evaluate the corrosion resistance and the presence or absence of residues. The results are also shown in Table 1.
The anticorrosion property is determined by the progress of corrosion of the copper wiring pattern, and the notation in Table 1 is as follows.
○: No corrosion confirmed Δ: Some corrosion confirmed ×: Significant corrosion confirmed Further, the presence or absence of a residue was judged by the presence or absence of a crystalline residue deposited on the wiring.

From Table 1, the cleaning liquid of Example 1 containing N-acetyl-1-cysteine (NAC) and tetramethylammonium hydroxide (TMAH) can achieve both improved corrosion resistance and no generation of residues derived from the anticorrosive component. You can see that
On the other hand, it was confirmed that corrosion occurred when no anticorrosive component was added as in Comparative Examples 1 and 2. Moreover, in Comparative Example 3 in which cysteine was used as the anticorrosive component instead of N-acetyl-1-cysteine, a residue that appeared to be derived from the anticorrosive component was generated. Similarly, in the case of containing an anticorrosive component having a high complexing ability to copper and high insolubility of the complex as in Comparative Examples 4 to 6, generation of a residue considered to be derived from the anticorrosive component was confirmed. From these results, it is expected that the use of the cleaning liquid of the present invention makes it possible to achieve both highly clean cleaning and corrosion inhibition.

  The substrate cleaning solution for semiconductor devices of the present invention can simultaneously remove fine particles, organic contamination, and metal contamination adhering to the substrate without corroding the metal on the surface of the semiconductor device substrate, and also has good water rinsing properties. Therefore, the present invention is industrially very useful as a cleaning technique for contaminated semiconductor device substrates in the manufacturing process of semiconductor devices and display devices.

Claims (10)

A cleaning liquid used in a semiconductor device substrate cleaning process performed after a chemical mechanical polishing process in semiconductor device manufacturing, which is an organic compound represented by N-acyl-L-cysteine and the following general formula (1) A substrate cleaning solution for a semiconductor device, containing a quaternary ammonium hydroxide and having a pH of 1.5 or more and less than 6.5.
(R ¹ ) ₄ N ⁺ OH ⁻ (1)
(However, R ¹ represents a hydroxyl group, an alkoxy group, or an alkyl group which may be substituted with halogen, and all four R ^{1 s} may be the same or different from each other.)   2. The substrate cleaning solution for a semiconductor device according to claim 1, wherein the concentration of N-acyl-L-cysteine in the cleaning solution is 1 to 5000 ppm by mass.   3. The substrate cleaning solution for a semiconductor device according to claim 1, wherein the N-acyl-L-cysteine is N-acetyl-L-cysteine. R ¹ in the organic quaternary ammonium hydroxide represented by the general formula (1) is a hydroxyl group, an alkoxy group having 1 to 3 carbon atoms, or an alkyl group having 1 to 3 carbon atoms which may be substituted with halogen. The substrate cleaning liquid for a semiconductor device according to claim 1, wherein the substrate cleaning liquid is a base.   The substrate cleaning solution for a semiconductor device according to any one of claims 1 to 4, wherein the cleaning solution contains an organic acid and a sulfonic acid type anionic surfactant.   6. The substrate cleaning liquid for a semiconductor device according to claim 1, wherein the organic acid is an organic acid having 1 to 10 carbon atoms having at least one carboxyl group.   7. The cleaning liquid for a semiconductor device substrate according to claim 6, wherein the organic acid is at least one selected from the group consisting of oxalic acid, citric acid, tartaric acid, malic acid, lactic acid and acetic acid.   The sulfonic acid type anionic surfactant is composed of alkyl sulfonic acid and its salt, alkyl benzene sulfonic acid and its salt, alkyl diphenyl ether disulfonic acid and its salt, alkyl methyl tauric acid and its salt, and sulfosuccinic acid diester and its salt The substrate cleaning liquid for a semiconductor device according to claim 5, wherein the substrate cleaning liquid is at least one selected from the group consisting of:   9. A semiconductor device substrate having a metal exposed on a surface after chemical mechanical polishing is cleaned using the semiconductor device substrate cleaning liquid according to claim 1. A method for cleaning a substrate for a semiconductor device.   The method for cleaning a semiconductor device substrate according to claim 9, wherein the metal is copper and / or an alloy containing copper.