JP2012038860A5

JP2012038860A5 -

Info

Publication number: JP2012038860A5
Application number: JP2010176468A
Authority: JP
Filing date: 2010-08-05
Publication date: 2013-10-10
Anticipated expiration: 2030-08-05

Claims

A method of laminating a semiconductor substrate in which at least two semiconductor substrates among a plurality of semiconductor substrates are laminated together ,
A selection step of selecting a second semiconductor substrate satisfying a stacking criterion for the first semiconductor substrate among the plurality of semiconductor substrates;
A laminating step of laminating the first semiconductor substrate and the second semiconductor substrate ;
A method for laminating a semiconductor substrate comprising:

A measurement step of measuring a position of an index provided on the surface of the first semiconductor substrate;
The selection step, relative to the position of the first semiconductor substrate, a semiconductor substrate which index is arranged at a position that satisfies the predetermined criterion is selected as the second semiconductor substrate which satisfies the laminated reference The method for laminating a semiconductor substrate according to claim 1.

The semiconductor substrate stacking method according to claim 2, further comprising: a holding step of holding, as a holding substrate , a semiconductor substrate in which a position of an index provided on a surface does not satisfy the reference among the plurality of semiconductor substrates.

Said selection step, wherein selecting a semiconductor substrate on which the index is in the range of displacement amount with respect to the position of the index of the first semiconductor substrate is predetermined is disposed in said second semiconductor substrate Item 4. The method for stacking semiconductor substrates according to Item 2 or 3 .

A polishing step of polishing the second semiconductor substrate after laminating the first semiconductor substrate and the second semiconductor substrate;
Forming an index on the polished surface of the second semiconductor substrate; and
Including
The measurement step measures the position of the index formed in the index formation step,
In the selection step, a semiconductor substrate in which an index is arranged at a position satisfying the standard with respect to the position of the index measured in the measurement step is selected as a new second semiconductor substrate that satisfies the stacking standard. The method for laminating a semiconductor substrate according to claim 2.

The semiconductor substrate stacking method according to claim 2, wherein the measuring step measures the position in a state where the warp of the first semiconductor substrate is corrected.

The criterion is any one of the first electrode provided on the semiconductor substrate surface of the height and the plurality of electrodes provided on the semiconductor substrate surface of a height claims 2 that is determined by adding the 6 The method for laminating a semiconductor substrate according to Item .

Said selection step, a semiconductor substrate The method of laminating according to any one of claims 1 7 for selecting the second semiconductor substrate in consideration of the thermal expansion in the process after including heating.

In the selection step, it is determined whether all the combinations of the plurality of first semiconductor substrates and the plurality of semiconductor substrates satisfy the stacking criterion, and the plurality of first semiconductor substrates and the plurality of semiconductors are determined. The method for laminating a semiconductor substrate according to any one of claims 1 to 8, wherein the second semiconductor substrate is selected so that the number of combinations with the substrate is maximized.

10. The method of laminating a semiconductor substrate according to claim 1, wherein at least one of the first semiconductor substrate and the second semiconductor substrate is an already laminated semiconductor substrate.

A method of laminating a semiconductor substrate in which at least two semiconductor substrates among a plurality of semiconductor substrates are laminated together,
A selection step of selecting a first semiconductor substrate and a second semiconductor substrate that satisfy a predetermined stacking criterion among a plurality of semiconductor substrates,
A laminating step of laminating the first semiconductor substrate and the second semiconductor substrate;
A method for laminating a semiconductor substrate comprising:

A semiconductor substrate laminating apparatus for laminating at least two semiconductor substrates among a plurality of semiconductor substrates,
A selection unit that selects a second semiconductor substrate that satisfies a stacking criterion for the first semiconductor substrate among the plurality of semiconductor substrates;
A stacked portion that stacks the first semiconductor substrate and the second semiconductor substrate ;
A semiconductor substrate laminating apparatus comprising:

A measurement unit that measures the position of an index provided on the surface of the first semiconductor substrate;
The selection unit, with respect to the position of the first semiconductor substrate, a semiconductor substrate which index is arranged at a position that satisfies the predetermined criterion is selected as the second semiconductor substrate which satisfies the laminated reference 13. A semiconductor substrate stacking apparatus according to claim 12 .

Wherein the plurality of the semiconductor substrate, a semiconductor substrate having a position indicator provided on the surface does not satisfy the criteria, the semiconductor substrate lamination device according to claim 13, Ru provided with a holding portion for holding the holding substrate.

The selection unit selects, as the second semiconductor substrate, a semiconductor substrate on which the index in which a deviation amount of the first semiconductor substrate with respect to the position of the index is within a predetermined range is arranged. Or a semiconductor substrate stacking apparatus according to 14.

The semiconductor substrate stacking apparatus according to claim 13, wherein the measurement unit measures the position in a state where the warp of the first semiconductor substrate is corrected.

17. The reference is determined by taking into account the height of an electrode provided on the surface of the first semiconductor substrate and the height of an electrode provided on the surface of the plurality of semiconductor substrates. The semiconductor substrate laminating apparatus according to the item.

The semiconductor substrate stacking apparatus according to claim 12, wherein the selection unit selects a second semiconductor substrate in consideration of thermal expansion in a post-process including heating.

The selection unit determines whether or not all the combinations of the plurality of first semiconductor substrates and the plurality of semiconductor substrates satisfy the stacking criterion, and the plurality of first semiconductor substrates and the plurality of semiconductors. 19. The semiconductor substrate stacking apparatus according to claim 12, wherein the second semiconductor substrate is selected so that the number of combinations with the substrate is maximized .

A semiconductor substrate laminating apparatus for laminating at least two semiconductor substrates among a plurality of semiconductor substrates,
A selection unit that selects a first semiconductor substrate and a second semiconductor substrate that satisfy a predetermined stacking criterion among a plurality of semiconductor substrates;
A stacked portion that stacks the first semiconductor substrate and the second semiconductor substrate;
A semiconductor substrate laminating apparatus comprising:

A device manufacturing method manufactured by stacking a plurality of substrates,
The step of superimposing the plurality of substrates includes:
The manufacturing method of the device which has the lamination | stacking method of the semiconductor substrate as described in any one of Claim 1 to 11.