JP2012038721A5 - - Google Patents

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Publication number
JP2012038721A5
JP2012038721A5 JP2011155515A JP2011155515A JP2012038721A5 JP 2012038721 A5 JP2012038721 A5 JP 2012038721A5 JP 2011155515 A JP2011155515 A JP 2011155515A JP 2011155515 A JP2011155515 A JP 2011155515A JP 2012038721 A5 JP2012038721 A5 JP 2012038721A5
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JP
Japan
Prior art keywords
crystal
silicon
regions
silicon crystal
orientation
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Application number
JP2011155515A
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English (en)
Japanese (ja)
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JP5932256B2 (ja
JP2012038721A (ja
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Priority to JP2011155515A priority Critical patent/JP5932256B2/ja
Priority claimed from JP2011155515A external-priority patent/JP5932256B2/ja
Publication of JP2012038721A publication Critical patent/JP2012038721A/ja
Publication of JP2012038721A5 publication Critical patent/JP2012038721A5/ja
Application granted granted Critical
Publication of JP5932256B2 publication Critical patent/JP5932256B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011155515A 2010-07-14 2011-07-14 蓄電装置 Expired - Fee Related JP5932256B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011155515A JP5932256B2 (ja) 2010-07-14 2011-07-14 蓄電装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010159663 2010-07-14
JP2010159663 2010-07-14
JP2011155515A JP5932256B2 (ja) 2010-07-14 2011-07-14 蓄電装置

Publications (3)

Publication Number Publication Date
JP2012038721A JP2012038721A (ja) 2012-02-23
JP2012038721A5 true JP2012038721A5 (https=) 2014-07-24
JP5932256B2 JP5932256B2 (ja) 2016-06-08

Family

ID=45467244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011155515A Expired - Fee Related JP5932256B2 (ja) 2010-07-14 2011-07-14 蓄電装置

Country Status (2)

Country Link
US (1) US20120015247A1 (https=)
JP (1) JP5932256B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543577B2 (en) 2010-12-16 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Active material, electrode including the active material and manufacturing method thereof, and secondary battery
JP6035054B2 (ja) 2011-06-24 2016-11-30 株式会社半導体エネルギー研究所 蓄電装置の電極の作製方法
JP6025284B2 (ja) 2011-08-19 2016-11-16 株式会社半導体エネルギー研究所 蓄電装置用の電極及び蓄電装置
WO2013027561A1 (en) 2011-08-19 2013-02-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode
KR20130024769A (ko) 2011-08-30 2013-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치
JP6000017B2 (ja) 2011-08-31 2016-09-28 株式会社半導体エネルギー研究所 蓄電装置及びその作製方法
JP5734793B2 (ja) * 2011-08-31 2015-06-17 株式会社半導体エネルギー研究所 蓄電装置
JP6034621B2 (ja) 2011-09-02 2016-11-30 株式会社半導体エネルギー研究所 蓄電装置の電極および蓄電装置
KR102906208B1 (ko) 2013-04-19 2025-12-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 이차 전지 및 그 제작 방법
US10910653B2 (en) * 2018-02-26 2021-02-02 Graphenix Development, Inc. Anodes for lithium-based energy storage devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0724028A3 (en) * 1994-12-27 1997-04-16 Shinetsu Chemical Co Process for producing wire-like silicon a crystal
US6199533B1 (en) * 1999-02-01 2001-03-13 Cummins Engine Company, Inc. Pilot valve controlled three-way fuel injection control valve assembly
US20050279274A1 (en) * 2004-04-30 2005-12-22 Chunming Niu Systems and methods for nanowire growth and manufacturing
US8080334B2 (en) * 2005-08-02 2011-12-20 Panasonic Corporation Lithium secondary battery
KR100759556B1 (ko) * 2005-10-17 2007-09-18 삼성에스디아이 주식회사 음극 활물질, 그 제조 방법 및 이를 채용한 음극과 리튬전지
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
WO2008063209A2 (en) * 2006-02-27 2008-05-29 Los Alamos National Security, Llc Optoelectronic devices utilizing materials having enhanced electronic transitions
JP5070916B2 (ja) * 2007-04-23 2012-11-14 株式会社Ｓｕｍｃｏ シリコン単結晶およびシリコンウェーハ
WO2009137241A2 (en) * 2008-04-14 2009-11-12 Bandgap Engineering, Inc. Process for fabricating nanowire arrays
US20100285358A1 (en) * 2009-05-07 2010-11-11 Amprius, Inc. Electrode Including Nanostructures for Rechargeable Cells
CN105206794B (zh) * 2010-03-03 2018-02-23 安普瑞斯股份有限公司 用于沉积活性材料的模板电极结构
WO2011137446A2 (en) * 2010-04-30 2011-11-03 University Of Southern California Fabrication of silicon nanowires

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