JP2012033705A5

JP2012033705A5 -

Info

Publication number: JP2012033705A5
Application number: JP2010171933A
Authority: JP
Filing date: 2010-07-30
Publication date: 2013-09-12
Anticipated expiration: 2030-07-30

Description

上記課題を解決するために成された本発明に係る２次元フォトニック結晶レーザは、
Al_αGa_1-αAs（0＜α＜1）又は(Al_βGa_1-β)_γIn_1-γP（0≦β＜1, 0＜γ＜1）を母材とする母材層内に異屈折率領域が周期的に設けられた２次元フォトニック結晶層と、
前記２次元フォトニック結晶層の上にエピタキシャル法によって作製されるエピタキシャル成長層と、
を有することを特徴とする。 A two-dimensional photonic crystal laser according to the present invention, which has been made to solve the above problems,
_{_{Al α Ga 1-α As (}} 0 <α <1) or _{_{(Al β Ga 1-β)}} γ In 1-γ P (0 ≦ β <1, 0 <γ <1) the base material layer to the base material A two-dimensional photonic crystal layer in which different refractive index regions are periodically provided,
An epitaxial growth layer formed by an epitaxial method on the two-dimensional photonic crystal layer;
It is characterized by having.

Claims

_{_{Al α Ga 1-α As (}} 0 <α <1) or _{_{(Al β Ga 1-β)}} γ In 1-γ P (0 ≦ β <1, 0 <γ <1) the base material layer to the base material A two-dimensional photonic crystal layer in which different refractive index regions are periodically provided,
An epitaxial growth layer formed by an epitaxial method on the two-dimensional photonic crystal layer;
A two-dimensional photonic crystal laser.

The two-dimensional photonic crystal laser according to claim 1, wherein the base material layer has a structure in which a plurality of layers having different compositions are laminated.

3. The two-dimensional photonic crystal laser according to claim 2, wherein among the plurality of layers constituting the base material layer, an Al content in a layer closest to the epitaxial layer is 0.1 or less.

4. The two-dimensional photonic crystal laser according to claim 2, wherein the base material layer has a layer made of GaAs.

5. The two-dimensional photonic crystal laser according to claim 1, wherein a material of the epitaxial growth layer is Al _x Ga _1-x As (0 <x <1).

6. The two-dimensional photonic crystal laser according to claim 1, wherein the different refractive index region is a hole.

The two-dimensional photonic crystal laser according to claim 1, wherein the different refractive index region is obtained by epitaxially growing Al _x Ga _1-x As (0 <x <1). .

The two-dimensional photonic crystal laser according to claim 1, wherein a p-type or n-type cladding layer is laminated on the epitaxial growth layer.