JP2012033528A - Aggregate wiring board - Google Patents

Aggregate wiring board Download PDF

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JP2012033528A
JP2012033528A JP2010169144A JP2010169144A JP2012033528A JP 2012033528 A JP2012033528 A JP 2012033528A JP 2010169144 A JP2010169144 A JP 2010169144A JP 2010169144 A JP2010169144 A JP 2010169144A JP 2012033528 A JP2012033528 A JP 2012033528A
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wiring board
surface side
semiconductor element
product block
dummy patterns
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JP5392726B2 (en
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Shigeji Kimura
茂治 木村
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Kyocer Slc Tech Corp
Kyocera SLC Technologies Corp
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Kyocer Slc Tech Corp
Kyocera SLC Technologies Corp
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Abstract

PROBLEM TO BE SOLVED: To provide an aggregate wiring board having a semiconductor element mounted on a flat wiring board, that can stably provide an electronic device by mounting the board favorably on another circuit board.SOLUTION: An aggregate wiring board 10 comprises: a product block 5 in which compact wiring boards 4 each including a stack of a plurality of insulation resin layers 1a to 1c and conduction layers 2a to 2d, and including a top surface provided with a mount part on which a semiconductor element S is mounted are integrally arranged vertically and horizontally; a frame-shaped marginal region 6 formed integrally around the product block 5; and dummy patterns 8a to 8d including the conduction layers 2a to 2d above and below each of the insulation resin layers 1a to 1c in the marginal region 6. The thermal expansion coefficient of the marginal region 6 is higher in the top surface side than in the lower surface side by increasing the area of the dummy patterns 8a to 8d in the conduction layers 2c and 2d on the lower surface side of the marginal region 6 as compared with the area thereof in the conduction layers 2a and 2b on the upper surface side of the marginal region 6.

Description

本発明は、半導体素子が搭載される小型の配線基板が縦横に複数並んで一体的に配列形成された製品ブロックを有するとともに、この製品ブロックの周囲に枠状の捨て代領域が一体的に配置形成されて成る集合配線基板に関するものである。   The present invention has a product block in which a plurality of small wiring boards on which semiconductor elements are mounted are arranged in a row in the vertical and horizontal directions, and a frame-shaped discard margin area is integrally disposed around the product block. The present invention relates to an assembled wiring board formed.

従来、半導体集積回路素子等の半導体素子を搭載するための小型の配線基板を複数同時に取り扱う形態として集合配線基板が用いられている。この集合配線基板は、複数の小型の配線基板を間に切断領域を挟んで縦横の並びに一体的に配列形成した製品ブロックの周囲に枠状の捨て代領域を一体的に備えてなる。そして、各小型の配線基板上に半導体集積回路素子等の半導体素子を例えば半田バンプを介して搭載するとともに、その半導体素子を例えばアンダーフィル法等により樹脂封止し、しかる後、切断領域に沿って切断することにより、小型の配線基板上に半導体素子が搭載された電子装置が多数個同時集約的に製造される。   Conventionally, a collective wiring board has been used as a form in which a plurality of small wiring boards for mounting semiconductor elements such as semiconductor integrated circuit elements are handled simultaneously. This collective wiring board is integrally provided with a frame-shaped discard margin area around a product block in which a plurality of small wiring boards are arranged in an integrated manner vertically and horizontally with a cutting area in between. Then, a semiconductor element such as a semiconductor integrated circuit element is mounted on each small wiring board through, for example, solder bumps, and the semiconductor element is resin-sealed by, for example, an underfill method, and then along the cutting region. By cutting in this manner, a large number of electronic devices each having a semiconductor element mounted on a small wiring board are manufactured in an integrated manner.

このような集合配線基板は、例えばビルドアップ法により製造される。具体的には、銅箔および銅めっき層から成る導体層が形成された絶縁樹脂層の上下面に、未硬化樹脂シートを貼着し、その樹脂シートを熱硬化させるとともにレーザ加工によりビアホールを形成して次層の絶縁樹脂層を形成し、次にその絶縁樹脂層の表面に周知のセミアディティブ法により銅めっき層から成る次層の導体層を形成し、さらに次層の絶縁樹脂層および次層の導体層を積層していくことにより製造される。   Such a collective wiring board is manufactured by, for example, a build-up method. Specifically, an uncured resin sheet is attached to the upper and lower surfaces of an insulating resin layer on which a conductor layer made of copper foil and a copper plating layer is formed, and the resin sheet is thermally cured and a via hole is formed by laser processing. Then, the next insulating resin layer is formed, and the next conductive layer made of a copper plating layer is formed on the surface of the insulating resin layer by a well-known semi-additive method. It is manufactured by laminating the conductor layers.

このような集合配線基板においては、製品ブロックにおける導体層とのバランスをとるために製品ブロックと同じ導体層から成る円形や四角形、六角形等の形状をした多数のダミーパターンを捨て代領域における各絶縁樹脂層の上下に並べて設けることにより集合配線基板に大きな反りや捻じれ等が発生しないようにしている。   In such a collective wiring board, in order to balance the conductor layer in the product block, a large number of dummy patterns made of the same conductor layer as the product block, such as a circle, a rectangle, and a hexagon, are discarded. By arranging the insulating resin layers on the top and bottom of the insulating resin layer, large warpage, twisting, or the like is prevented from occurring in the collective wiring board.

なお、この集合配線基板における製品ブロック内の各配線基板上に半導体素子を搭載するときは、製品ブロック内の各配線基板上に半田バンプを形成しておくとともに、この半田バンプ上に半導体素子を載置し、しかる後、これらを半田バンプが溶融する温度に加熱することによって溶融した半田バンプを介して半導体素子と配線基板とを接続し、しかる後、室温まで冷却する方法が採用されている。   When mounting a semiconductor element on each wiring board in the product block in this collective wiring board, solder bumps are formed on each wiring board in the product block, and the semiconductor elements are placed on the solder bumps. A method is employed in which the semiconductor element and the wiring board are connected via the melted solder bumps by heating them to a temperature at which the solder bumps melt, and then cooled to room temperature. .

特開2001−326429公報JP 2001-326429 A

上述したように、従来の集合配線基板においては、捨て代領域に製品ブロックとのバランスのとれたダミーパターンを設けているので半田バンプが溶融する温度に加熱されたとしても製品ブロックにおける反りや捻じれが低減されて略平坦な状態で半導体素子と配線基板とを溶融した半田で接続することができる。しかしながら、半田バンプを溶融させて半導体素子と配線基板とを接続した後、半導体素子が搭載された配線基板を室温に戻すと、配線基板の熱膨張係数が半導体素子の熱膨張係数よりも大きいことから、配線基板が半導体素子よりも大きく熱収縮し、その結果、配線基板の上面側が凸面となるような反りが発生してしまう。このような反りが大きい場合、その配線基板上に半導体素子が搭載された電子装置を他の回路基板上に実装する際にその実装が困難となる。   As described above, in the conventional collective wiring board, a dummy pattern that is balanced with the product block is provided in the margin area, so even if the solder bump is heated to a temperature at which it melts, warping and twisting in the product block This is reduced, and the semiconductor element and the wiring board can be connected with molten solder in a substantially flat state. However, after the solder bump is melted and the semiconductor element and the wiring board are connected, when the wiring board on which the semiconductor element is mounted is returned to room temperature, the thermal expansion coefficient of the wiring board is larger than the thermal expansion coefficient of the semiconductor element. Therefore, the wiring board is thermally contracted to a greater extent than the semiconductor element, and as a result, warpage occurs such that the upper surface side of the wiring board becomes a convex surface. When such a warp is large, it is difficult to mount an electronic device having a semiconductor element mounted on the wiring board on another circuit board.

本発明は、かかる従来の問題点に鑑み案出されたものであり、その解決しようとする課題は、製品ブロック内の配線基板に半導体素子を搭載して室温に戻した際に配線基板に大きな反りが発生することを有効に防止することができ、それにより、平坦な配線基板上に半導体素子が搭載され、他の回路基板に良好に実装することが可能な電子装置を安定して得ることが可能な集合配線基板を提供することにある。   The present invention has been devised in view of such conventional problems, and the problem to be solved is that the circuit board is large when the semiconductor element is mounted on the wiring board in the product block and returned to room temperature. It is possible to effectively prevent the occurrence of warpage, and thereby stably obtain an electronic device in which a semiconductor element is mounted on a flat wiring board and can be satisfactorily mounted on another circuit board. An object of the present invention is to provide a collective wiring board capable of satisfying the requirements.

本発明の集合配線基板は、複数の絶縁樹脂層と導体層とが積層されて成り、半導体素子が搭載される搭載部を上面に有する小型の配線基板が縦横の並びに一体的に配列形成された製品ブロックと、該製品ブロックの周囲に一体的に配置形成された枠状の捨て代領域とを具備するとともに、前記捨て代領域における各絶縁樹脂層の上下に前記導体層から成るダミーパターンを有して成る集合配線基板であって、前記ダミーパターンの面積を前記捨て代領域の上面側の導体層よりも下面側の導体層で大きくすることにより前記捨て代領域の熱膨張係数が上面側よりも下面側で大きくなっていることを特徴とするものである。   The collective wiring board of the present invention is formed by laminating a plurality of insulating resin layers and conductor layers, and small wiring boards having a mounting portion on which a semiconductor element is mounted on the upper surface are integrally formed in a vertical and horizontal arrangement. A product block and a frame-shaped discard margin area integrally formed around the product block, and a dummy pattern made of the conductor layer is provided above and below each insulating resin layer in the discard margin area. And the thermal expansion coefficient of the abandon margin region is larger than that of the upper surface side by increasing the area of the dummy pattern in the lower conductor layer than the conductor layer on the upper surface side of the abandon margin region. Is also larger on the lower surface side.

本発明の配線基板によれば、ダミーパターンの面積を捨て代領域の上面側の導体層よりも下面側の導体層で大きくすることにより捨て代領域の熱膨張係数が上面側よりも下面側で大きくなっていることから、製品ブロックの各配線基板上に半導体素子を搭載する際に、半田バンプが溶融する温度以上に加熱すると、製品ブロックを取り囲む捨て代領域は、その下面側が上面側よりも大きく熱膨張し、その結果、この上面側と下面側の熱膨張の差に起因して製品ブロックにおける各配線基板の上面が凹面となるような変形が生じる。そして、この状態で製品ブロック内の各配線基板に半導体素子を搭載した後、室温に戻すと、配線基板の熱膨張係数が半導体素子の熱膨張係数よりも大きいことから、配線基板が半導体素子よりも大きく熱収縮し、その結果、加熱時に上面が凹面となるように変形していた配線基板は、常温では平坦となる方向に変形する。したがって、本発明の集合配線基板によれば、平坦な配線基板上に半導体素子が搭載され、他の回路基板に良好に実装することが可能な電子装置を極めて安定して得ることができる。   According to the wiring board of the present invention, by increasing the area of the dummy pattern in the conductor layer on the lower surface side than the conductor layer on the upper surface side of the disposal margin region, the thermal expansion coefficient of the disposal margin region is lower on the lower surface side than the upper surface side. Therefore, when a semiconductor element is mounted on each wiring board of the product block, if it is heated above the temperature at which the solder bumps melt, the disposal margin area surrounding the product block is lower on the lower side than on the upper side. Due to the large thermal expansion, as a result, a deformation occurs such that the upper surface of each wiring board in the product block becomes concave due to the difference in thermal expansion between the upper surface side and the lower surface side. And after mounting a semiconductor element on each wiring board in the product block in this state and returning to room temperature, the thermal expansion coefficient of the wiring board is larger than the thermal expansion coefficient of the semiconductor element. As a result, the wiring board that has been deformed so that the upper surface becomes concave when heated is deformed in a direction that becomes flat at room temperature. Therefore, according to the collective wiring board of the present invention, an electronic device in which a semiconductor element is mounted on a flat wiring board and can be satisfactorily mounted on another circuit board can be obtained extremely stably.

図1(a),(b)は、本発明の集合配線基板における実施形態の一例を説明するための断面図および上面図である。FIGS. 1A and 1B are a cross-sectional view and a top view for explaining an example of an embodiment of the collective wiring board of the present invention. 図2(a),(b)は、本発明の集合配線基板における実施形態の一例を説明するための要部平面図である。FIGS. 2A and 2B are main part plan views for explaining an example of the embodiment of the collective wiring board of the present invention. 図3(a),(b),(c),(d)は、図1,2に示す集合配線基板に半導体素子搭載して電子装置を製造する方法を説明するための断面図である。3A, 3B, 3C, and 3D are cross-sectional views for explaining a method of manufacturing an electronic device by mounting semiconductor elements on the collective wiring substrate shown in FIGS.

次に、本発明の集合配線基板の実施形態の一例を添付の図1(a),(b)を基に説明する。図1(a)に示すように、本例の集合配線基板10は、コア用の絶縁樹脂層1bの上下面にビルドアップ用の絶縁樹脂層1a,1cが積層されて成る絶縁基板1の内部および表面に銅箔や銅めっき層から成る導体層2a,2b,2c,2dが積層されて成り、更にその上下面には、保護用のソルダーレジスト層3a,3bが被着されている。絶縁樹脂層1bは、ガラスクロスに熱硬化性樹脂を含浸させた繊維強化絶縁樹脂材料から成る。絶縁層1a,1cは熱硬化性樹脂に酸化珪素等の無機絶縁フィラーを分散させたフィラー含有絶縁樹脂材料から成る。ソルダーレジスト層は、感光性を有する熱硬化樹脂に酸化珪素等の無機絶縁フィラーを分散させたフィラー含有感光性絶縁樹脂材料から成る。これらの樹脂材料の熱膨張係数は、導体層2a,2b,2c,2dの熱膨張係数よりも小さいものが使用される。   Next, an example of the embodiment of the collective wiring board of the present invention will be described with reference to FIGS. 1 (a) and 1 (b). As shown in FIG. 1 (a), the collective wiring board 10 of this example includes an interior of an insulating substrate 1 formed by laminating insulating resin layers 1a and 1c for build-up on upper and lower surfaces of a core insulating resin layer 1b. Further, conductor layers 2a, 2b, 2c, 2d made of copper foil or a copper plating layer are laminated on the surface, and protective solder resist layers 3a, 3b are deposited on the upper and lower surfaces thereof. The insulating resin layer 1b is made of a fiber reinforced insulating resin material in which a glass cloth is impregnated with a thermosetting resin. The insulating layers 1a and 1c are made of a filler-containing insulating resin material in which an inorganic insulating filler such as silicon oxide is dispersed in a thermosetting resin. The solder resist layer is made of a filler-containing photosensitive insulating resin material in which an inorganic insulating filler such as silicon oxide is dispersed in a photosensitive thermosetting resin. Those having a thermal expansion coefficient smaller than those of the conductor layers 2a, 2b, 2c, and 2d are used.

図1(b)に示すように、集合配線基板10の中央部には、半導体集積回路素子等の半導体素子を搭載するための小型の配線基板4が縦横の並びに複数並んで一体的に配列形成された製品ブロック5が形成されており、さらにその外周部には製品ブロック5を取り囲むようにして四角枠状の捨て代領域6が形成されている。なお、この例では、配線基板4を4列×4列の配列で16個形成して製品ブロック5を形成した例を示しているが、製品ブロック5内に配列する配線基板4の個数や配列方法は必要に応じて適宜変更すればよい。さらには、一つの集合配線基板10の中に複数の製品ブロック5を配列してもよい。   As shown in FIG. 1B, a plurality of small-sized wiring boards 4 for mounting semiconductor elements such as semiconductor integrated circuit elements are arranged in a row in the central portion of the collective wiring board 10 in a vertical and horizontal manner. The product block 5 is formed, and a rectangular frame-shaped discard margin region 6 is formed on the outer periphery of the product block 5 so as to surround the product block 5. In this example, the product block 5 is formed by forming 16 wiring boards 4 in a 4 × 4 array. However, the number and arrangement of the wiring boards 4 arranged in the product block 5 are shown. What is necessary is just to change a method suitably as needed. Further, a plurality of product blocks 5 may be arranged in one collective wiring board 10.

各配線基板4には、その上面中央部に半導体素子を搭載するための搭載部が形成されている。この搭載部には後述するように半導体素子Sが半田バンプ9を介して接合される。そして、図1(a)に示すように、搭載部から下面にかけては、導体層2a,2b,2c,2dから成る配線導体7が所定のパターンに形成されている。また、捨て代領域6には導体層2a,2b,2c,2dから成るダミーパターン8a,8b,8c,8dが形成されている。   Each wiring board 4 is formed with a mounting portion for mounting a semiconductor element at the center of the upper surface thereof. As will be described later, the semiconductor element S is bonded to the mounting portion via the solder bumps 9. As shown in FIG. 1A, wiring conductors 7 including conductor layers 2a, 2b, 2c, and 2d are formed in a predetermined pattern from the mounting portion to the lower surface. Further, dummy patterns 8a, 8b, 8c, 8d made of conductor layers 2a, 2b, 2c, 2d are formed in the discard margin region 6.

このような集合配線基板10は、ビルドアップ法により製造される。具体的には、銅箔および銅めっき層から成る導体層2b,2cが形成された絶縁樹脂層1bの上下面に、絶縁樹脂層1a,1b用の未硬化樹脂シートを貼着し、その樹脂シートを熱硬化させるとともにレーザ加工によりビアホールを形成して絶縁樹脂層1a,1bを形成し、次に絶縁樹脂層1a,1bの表面に周知のセミアディティブ法により銅めっき層から成る導体層2a,2dを形成することにより製造される。   Such a collective wiring board 10 is manufactured by a build-up method. Specifically, uncured resin sheets for the insulating resin layers 1a and 1b are bonded to the upper and lower surfaces of the insulating resin layer 1b on which the conductor layers 2b and 2c made of copper foil and copper plating layer are formed, and the resin The sheet is heat-cured and via holes are formed by laser processing to form insulating resin layers 1a and 1b. Next, conductor layers 2a made of a copper plating layer are formed on the surfaces of the insulating resin layers 1a and 1b by a known semi-additive method, Manufactured by forming 2d.

本例の集合配線基板においては、捨て代領域6に形成されたダミーパターン8a,8b,8c,8dの面積が絶縁基板1の上面側と下面側とで異なっている。具体的には、上面側のダミーパターン8a,8bの面積よりも下面側のダミーパターン8c,8dの面積が大きくなるように設定されている。   In the collective wiring board of this example, the areas of the dummy patterns 8 a, 8 b, 8 c, 8 d formed in the discard margin region 6 are different between the upper surface side and the lower surface side of the insulating substrate 1. Specifically, the area of the dummy patterns 8c and 8d on the lower surface side is set to be larger than the area of the dummy patterns 8a and 8b on the upper surface side.

ここで、ダミーパターン8a,8bと8c,8dの一例を、図2(a),(b)に平面図で示す。これらの図において、図2(a)はダミーパターン8a,8bを示し、図2(b)はダミーパターン8c,8dを示している。なお、ここでは理解を容易とするためにダミーパターン8a,8b,8c,8dのみを示し、他の配線導体7については表示および説明を省略する。   Here, examples of the dummy patterns 8a, 8b and 8c, 8d are shown in plan views in FIGS. In these drawings, FIG. 2A shows dummy patterns 8a and 8b, and FIG. 2B shows dummy patterns 8c and 8d. Here, only the dummy patterns 8a, 8b, 8c, and 8d are shown for easy understanding, and the display and description of the other wiring conductors 7 are omitted.

ダミーパターン8a,8b,8c,8dは、図2(a),(b)に示すように、主として、捨て代領域6の製品ブロック側5から外周側に向けて延在する多数の短冊状パターンが製品ブロック5を取り囲むように所定の間隔で並ぶことにより形成されている。絶縁基板1の上面側のダミーパターン8a,8bと下面側のダミーパターン8c,8dとでは、各短冊状パターンの幅および長さが異なっている。この例では、上面側のダミーパターン8a,8bにおける各短冊状パターンの幅および長さが下面側のダミーパターン8c,8dにおける短冊状パターンの幅および長さよりも小さい。それにより、上面側のダミーパターン8a,8bの面積よりも下面側のダミーパターン8c,8dの面積が大きくなっている。このように、上面側のダミーパターン8a,8bの面積よりも下面側のダミーパターン8c,8dの面積が大きいことから、捨て代領域6においては、その下面側の熱膨張係数が上面側の熱膨張係数よりも大きくなっている。これは、ダミーパターン8a,8b,8c,8dを構成する銅箔や銅めっき層の熱膨張係数が絶縁樹脂層1a,1b,1cの熱膨張係数よりも大きいためである。本発明においては、このように上面側のダミーパターン8a,8bの面積よりも下面側のダミーパターン8c,8dの面積が大きく、捨て代領域6における下面側の熱膨張係数が上面側の熱膨張係数よりも大きくなっていることが重要である。   As shown in FIGS. 2A and 2B, the dummy patterns 8a, 8b, 8c, and 8d are mainly a large number of strip-shaped patterns that extend from the product block side 5 to the outer peripheral side of the discard margin area 6. Are arranged at predetermined intervals so as to surround the product block 5. The dummy patterns 8a and 8b on the upper surface side of the insulating substrate 1 and the dummy patterns 8c and 8d on the lower surface side have different widths and lengths of the strip-shaped patterns. In this example, the width and length of each strip pattern in the upper dummy patterns 8a and 8b are smaller than the width and length of the strip patterns in the lower dummy patterns 8c and 8d. Thereby, the areas of the dummy patterns 8c and 8d on the lower surface side are larger than the areas of the dummy patterns 8a and 8b on the upper surface side. As described above, since the area of the dummy patterns 8c and 8d on the lower surface side is larger than the area of the dummy patterns 8a and 8b on the upper surface side, the thermal expansion coefficient on the lower surface side has a thermal expansion coefficient on the upper surface side. It is larger than the expansion coefficient. This is because the thermal expansion coefficients of the copper foils and copper plating layers constituting the dummy patterns 8a, 8b, 8c, and 8d are larger than the thermal expansion coefficients of the insulating resin layers 1a, 1b, and 1c. In the present invention, the area of the dummy patterns 8c and 8d on the lower surface side is larger than the area of the dummy patterns 8a and 8b on the upper surface side in this way, and the thermal expansion coefficient on the lower surface side in the disposal margin region 6 is the thermal expansion on the upper surface side. It is important that it is larger than the coefficient.

ここで、本例の集合配線基板10に半導体素子を搭載して電子装置となす工程を説明する。まず、図3(a)に示すように、集合配線基板10の上に半田バンプ9を設けるとともに半田バンプ9の上に半導体素子Sを載置する。このとき、集合配線基板10は、室温で略平坦な状態となっている。   Here, a process of mounting a semiconductor element on the collective wiring board 10 of this example to form an electronic device will be described. First, as shown in FIG. 3A, solder bumps 9 are provided on the collective wiring substrate 10 and the semiconductor element S is placed on the solder bumps 9. At this time, the assembly wiring board 10 is in a substantially flat state at room temperature.

次に、図3(b)に示すように、半導体素子Sが載置された集合配線基板10を半田バンプ9が溶融する温度に加熱する。これにより、半田バンプ9が溶融して半導体素子Sと各配線基板4とが電気的に接続される。このとき、捨て代領域6では、その熱膨張係数が絶縁基板1の上面側よりも下面側で大きくなっていることから、下面側が上面側よりも大きく熱膨張し、その結果、この上面側と下面側の熱膨張の差に起因して製品ブロック5における各配線基板4の上面が凹面となるような変形が生じる。   Next, as shown in FIG. 3B, the assembly wiring board 10 on which the semiconductor element S is placed is heated to a temperature at which the solder bumps 9 melt. Thereby, the solder bump 9 is melted and the semiconductor element S and each wiring board 4 are electrically connected. At this time, in the disposal margin region 6, the coefficient of thermal expansion is larger on the lower surface side than the upper surface side of the insulating substrate 1, so that the lower surface side is more thermally expanded than the upper surface side. Due to the difference in thermal expansion on the lower surface side, deformation occurs such that the upper surface of each wiring board 4 in the product block 5 becomes concave.

次に、図3(c)に示すように、半導体素子Sが接続された集合配線基板10を室温まで戻す。このとき、配線基板4の熱膨張係数が半導体素子Sの熱膨張係数よりも大きいことから、配線基板4が半導体素子Sよりも大きく熱収縮し、その結果、加熱時に上面が凹面となるように変形していた配線基板4は、常温では平坦となる方向に変形する。   Next, as shown in FIG. 3C, the assembly wiring board 10 to which the semiconductor element S is connected is returned to room temperature. At this time, since the thermal expansion coefficient of the wiring board 4 is larger than the thermal expansion coefficient of the semiconductor element S, the wiring board 4 is thermally contracted more than the semiconductor element S, and as a result, the upper surface becomes concave when heated. The deformed wiring board 4 is deformed in a direction that becomes flat at room temperature.

そして最後に、図3(d)に示すように、製品ブロック5内の各配線基板4を切断領域に沿って切断することによって、小型の配線基板4上に半導体素子Sが搭載された電子装置20が多数個同時集約的に作製される。このとき、作製された電子装置20における配線基板4は平坦であることから、電子装置20を他の回路基板に良好に実装することができる。   Finally, as shown in FIG. 3D, the electronic device in which the semiconductor element S is mounted on the small-sized wiring board 4 by cutting each wiring board 4 in the product block 5 along the cutting region. A large number of 20 are produced simultaneously. At this time, since the wiring board 4 in the manufactured electronic device 20 is flat, the electronic device 20 can be favorably mounted on another circuit board.

かくして本発明の集合配線基板によれば、平坦な配線基板上に半導体素子が搭載され、他の回路基板に良好に実装することが可能な電子装置を極めて安定して得ることができる。なお本発明は、上述の実施形態の一例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能であることはいうまでもない。例えば上述の実施形態の一例では、ダミーパターン8a,8b,8c,8dは、短冊状であったが、円形や四角形、六角形等の他の形状をしていてもよい。   Thus, according to the collective wiring board of the present invention, an electronic device in which a semiconductor element is mounted on a flat wiring board and can be satisfactorily mounted on another circuit board can be obtained extremely stably. In addition, this invention is not limited to an example of the above-mentioned embodiment, and it cannot be overemphasized that a various change is possible if it is the range which does not deviate from the summary of this invention. For example, in the example of the above-described embodiment, the dummy patterns 8a, 8b, 8c, and 8d have a strip shape, but may have other shapes such as a circle, a rectangle, and a hexagon.

1 絶縁基板
1a,1b,1c, 絶縁樹脂層
2a,2b,2c,2d 導体層
4 小型の配線基板
5 製品ブロック
6 捨て代領域
8a,8b,8c,8d ダミーパターン
DESCRIPTION OF SYMBOLS 1 Insulation board | substrate 1a, 1b, 1c, Insulation resin layer 2a, 2b, 2c, 2d Conductor layer 4 Small wiring board 5 Product block 6 Discard allowance area 8a, 8b, 8c, 8d Dummy pattern

Claims (1)

複数の絶縁樹脂層と導体層とが積層されて成り、半導体素子が搭載される搭載部を上面に有する小型の配線基板が縦横の並びに一体的に配列形成された製品ブロックと、該製品ブロックの周囲に一体的に配置形成された枠状の捨て代領域とを具備するとともに、前記捨て代領域における前記各絶縁樹脂層の上下に前記導体層から成るダミーパターンを有して成る集合配線基板であって、前記ダミーパターンの面積を前記捨て代領域の上面側の導体層よりも下面側の導体層で大きくすることにより前記捨て代領域の熱膨張係数が上面側よりも下面側で大きくなっていることを特徴とする集合配線基板。   A product block formed by laminating a plurality of insulating resin layers and a conductor layer, and having a small wiring board having a mounting portion on which a semiconductor element is mounted on the top surface, which is integrally formed vertically and horizontally, and the product block A collective wiring board having a frame-shaped discard margin region integrally formed around the periphery, and having dummy patterns made of the conductor layers above and below each insulating resin layer in the discard margin region In addition, by increasing the area of the dummy pattern in the conductor layer on the lower surface side than the conductor layer on the upper surface side of the discard margin region, the thermal expansion coefficient of the discard margin region becomes larger on the lower surface side than on the upper surface side. A collective wiring board characterized by comprising:
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016086004A (en) * 2014-10-23 2016-05-19 イビデン株式会社 Print wiring board
JP7357582B2 (en) 2020-04-20 2023-10-06 住友電気工業株式会社 flexible printed wiring board

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088140A (en) * 2005-09-21 2007-04-05 Cmk Corp Assembled printed wiring board
JP2008021921A (en) * 2006-07-14 2008-01-31 Nec Electronics Corp Wiring substrate, semiconductor device, and method of manufacturing same
JP2009152282A (en) * 2007-12-19 2009-07-09 Shinko Electric Ind Co Ltd Aggregate wiring board and semiconductor package
JP2010135418A (en) * 2008-12-02 2010-06-17 Shinko Electric Ind Co Ltd Wiring board and electronic component device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088140A (en) * 2005-09-21 2007-04-05 Cmk Corp Assembled printed wiring board
JP2008021921A (en) * 2006-07-14 2008-01-31 Nec Electronics Corp Wiring substrate, semiconductor device, and method of manufacturing same
JP2009152282A (en) * 2007-12-19 2009-07-09 Shinko Electric Ind Co Ltd Aggregate wiring board and semiconductor package
JP2010135418A (en) * 2008-12-02 2010-06-17 Shinko Electric Ind Co Ltd Wiring board and electronic component device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016086004A (en) * 2014-10-23 2016-05-19 イビデン株式会社 Print wiring board
JP7357582B2 (en) 2020-04-20 2023-10-06 住友電気工業株式会社 flexible printed wiring board

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