JP2012032401A - Temperature measurement method and apparatus, and heat treatment apparatus and heat treatment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature measurement method that measures the temperature of a body to be treated with high accuracy, a temperature measurement apparatus, and a heat treatment apparatus and a heat treatment method.SOLUTION: The temperature measurement method includes a process of selecting corresponding heat radiation light having a wavelength in a predetermined range from heat radiation light emitted from a body to be measured, and a process of calculating temperature using the heat radiation light having the wavelength in the predetermined range selected in the selection process.

Description

  The present invention relates to a temperature measuring apparatus and a temperature measuring method for measuring the temperature of a measurement object in a non-contact manner with the temperature of the measurement object using thermal radiation emitted from the measurement object. The present invention is suitable, for example, for a temperature measuring apparatus and method for measuring the temperature of an object to be processed of a heat treatment apparatus that heat-treats the object to be processed such as a single crystal substrate or a glass substrate.

  In general, in order to manufacture a semiconductor integrated circuit, various heat treatments such as a film forming process, an annealing process, an oxidative diffusion process, a sputtering process, an etching process, and a nitriding process are performed multiple times on a silicon substrate such as a semiconductor wafer. Repeated. In such a technique, the temperature of the object to be processed needs to be accurately grasped in order to affect the quality of the process (for example, the film thickness in the film forming process). Therefore, a temperature measuring device for measuring the temperature of the object to be processed is provided in a heat treatment device such as a thermal CVD device or an annealing device.

  The temperature measuring device is typically roughly classified into a contact type that directly contacts the measured object and a non-contact type that measures a heat ray radiated from the measured object depending on a difference in temperature measurement format with respect to the measured object. Thermocouples are widely used in general and industrial as contact-type temperature measuring devices because they are inexpensive. However, since the thermocouple needs to be in contact with the object to be measured, it needs to be provided in the processing chamber, and not only can the processing chamber be contaminated but also must be in contact with the object to be processed. May be contaminated by the metal constituting the thermocouple. However, if the contact-type thermocouple is separated from the object to be measured, it becomes impossible to accurately measure the temperature of the object to be processed. In addition, thermocouples exist in the processing space and are difficult to apply to heat treatment devices because they touch and corrode the processing gas and cannot accurately measure temperature.

  Therefore, a radiation thermometer that is a non-contact type temperature measuring device has been conventionally proposed. The radiation thermometer detects the infrared intensity radiated from the back surface of the object to be processed, and obtains the emissivity ε of the object to be processed according to the following equation 1 to convert the temperature of the object to be processed. Calculate body temperature.

Here, E _BB (T) is the radiation intensity from the black body at temperature T, E _m (T) is the radiation intensity measured from the object to be processed at temperature T, and ε is the emissivity of the object to be processed.

  However, temperature measurement using a conventional radiation thermometer involves an error from the actual temperature of the object to be processed, and there is a problem that high-quality heat treatment cannot be performed. As a result of earnestly examining the cause of such a problem, the present inventors have found that these errors in temperature measurement using a radiation thermometer are caused by light other than light used for measurement called stray light, for example, radiation from a heating source. I found out that In particular, in a single wafer processing chamber in which the reflectance of members around the object to be processed is increased in order to increase thermal efficiency, the influence of measurement errors due to stray light is large. However, there is no effective method for solving such a problem, and there has been only a method for measuring the temperature with a thermoradiometer while being aware of the error due to stray light.

  Accordingly, it is a general object of the present invention to provide a new and useful temperature measuring method and apparatus, heat treatment apparatus and heat treatment method that solve such problems.

  More specifically, it is an exemplary object of the present invention to provide a temperature measuring method and apparatus, a heat treatment apparatus and a method capable of measuring the temperature of an object to be processed with high accuracy.

  In order to achieve the above object, a temperature measurement method as an exemplary embodiment of the present invention includes a step of selecting the thermal radiation having a wavelength in a predetermined region from thermal radiation emitted from a measurement object; Calculating a temperature using the thermal radiation having the wavelength of the predetermined region selected in the selection step. Such a temperature measurement method includes a step of selecting thermal radiation having a wavelength in a predetermined region of radiation emitted from the object to be processed, so that the wavelength from a wavelength region exhibiting a high emissivity, that is, a wavelength region with less noise. And the temperature can be calculated using thermal radiation having such a wavelength. Therefore, temperature measurement with higher accuracy than before can be performed. As the wavelength of the predetermined region, it is preferable to select a wavelength region having a high emissivity of the object to be measured. For example, when the object to be measured is quartz, the predetermined wavelength region is 4.5 to 7.4 μm or 9.0 to 19.0 μm, and when the object to be measured is SiC, the predetermined wavelength region is 4. When the object to be measured is AlN, the predetermined wavelength regions are 5.0 to 11.0 μm and 17.0 to 25.0 μm.

  A temperature measuring apparatus as an exemplary aspect of the present invention is a temperature measuring apparatus that measures temperature using thermal radiation emitted from a measurement object, and selects a wavelength in a predetermined region of the thermal radiation. A selection unit; and a detector that detects the thermal radiation having the wavelength of the predetermined region selected by the selection unit. In such a temperature measuring apparatus, the temperature can be measured by the selection unit selecting thermal radiation having a wavelength in a predetermined region and detecting the thermal radiation. Such a temperature measuring apparatus can achieve the above-described temperature measuring method, and can perform accurate temperature measurement. In addition, temperature measurement is performed in a measurement space that is capable of shielding all light except the heat radiation light and includes at least a part of the measurement object. Such a temperature measuring device can form a separate atmosphere in the measurement space including the object to be measured and shield stray light, and can reduce the influence of stray light compared to measurement in an open space.

  A heat treatment apparatus as an exemplary embodiment of the present invention includes a treatment chamber that performs a predetermined heat treatment on a target object, a heating unit that heats the target object, and a temperature measurement device that measures the temperature of the target object. A heat treatment apparatus having a control unit for controlling the heating power of the heating unit from the temperature of the object to be processed measured by the radiation thermometer, wherein the temperature measuring device is radiated from the object to be processed A selection unit that selects a wavelength existing in a predetermined wavelength region of the thermal radiation; and a detector that detects the thermal radiation having a wavelength in the predetermined region selected by the selection unit. Such a heat treatment apparatus has a temperature measurement apparatus capable of achieving the above-described temperature measurement method, and exhibits the same function. Therefore, it becomes possible to accurately measure the temperature of the object to be measured, increase the stability and reproducibility of the production performance, and provide a high-precision heat treatment and a high-quality wafer subjected to the heat treatment. It becomes possible.

  The heat treatment method as an exemplary embodiment of the present invention includes a step of heating an object to be processed by a heat source, a step of measuring the temperature of the object to be processed by a temperature measuring device, and the object to be measured measured by the radiation thermometer. A heat treatment method including a step of controlling a heating power of the heat source from a temperature of a treatment object, wherein the measurement step includes a pre-thermal radiation light having a wavelength in a predetermined region from the heat radiation light emitted from the measurement object. And a step of calculating a temperature using the thermal radiation having the wavelength of the predetermined region selected in the selection step. Such a heat treatment method can also exhibit the same effect as the above-described temperature measurement method.

  According to the temperature measuring method and the temperature measuring apparatus which are exemplary embodiments of the present invention, it is possible to increase the measurement accuracy with respect to the measured object. In addition, the heat treatment apparatus and the heat treatment method using the temperature measurement method and the temperature measurement apparatus can measure the temperature of the object to be processed with high accuracy, so that it is easy to achieve high quality heat treatment.

It is a schematic block diagram which shows the radiation thermometer of this invention. It is a schematic sectional drawing which shows the relationship between the radiation thermometer shown in FIG. 1, and a to-be-measured body. It is a schematic sectional drawing which shows another relationship between the radiation thermometer shown in FIG. 1, and a to-be-measured object. It is the figure which showed the emissivity with respect to the wavelength of a quartz substrate which used temperature and substrate thickness as parameters. It is the figure which showed the emissivity with respect to the wavelength of a SiC (silicon carbide) board | substrate when temperature and the thickness of material are used as parameters. It is the figure which showed the emissivity with respect to the wavelength of an AlN (aluminum nitride) board | substrate when temperature and the thickness of material are used as parameters. It is a schematic side view which shows another example one aspect | mode of the radiation thermometer shown in FIG. It is a schematic sectional drawing of the heat processing apparatus as an illustrative aspect of the present invention. It is a schematic bottom view of the heating part shown in FIG. It is an expanded sectional view which shows a part of heating part shown in FIG. It is a figure corresponding to Drawing 10 when a lamp is removed from a lamp heating part shown in Drawing 8. It is a schematic sectional drawing of the lamp | ramp shown in FIG. It is a schematic sectional drawing of the reflector shown in FIG. It is a schematic bottom view of the reflector shown in FIG. It is the schematic side view which showed the reflector which is a modification of the reflector shown in FIG. FIG. 16 is a schematic bottom view of the reflector shown in FIG. 15. It is a general | schematic expanded sectional view of the radiation thermometer shown in FIG. 8, and the process chamber of the vicinity. It is a schematic sectional drawing of the heat processing apparatus which shows another form of temperature measurement of this invention. It is an expanded sectional view which shows the mounting base of the heat processing apparatus shown in FIG. 18, and its vicinity. It is a schematic sectional drawing for demonstrating the modification of the bottom part as a cooling plate of the heat processing apparatus shown in FIG. It is a schematic sectional drawing for demonstrating the positional relationship of a to-be-processed object and a bottom at the time of heating a to-be-processed object in the structure shown in FIG. It is a schematic sectional drawing for demonstrating the positional relationship of a to-be-processed object and the bottom at the time of cooling a to-be-processed object in the structure shown in FIG. It is a general | schematic expanded sectional view of the continuous line area | region V shown in FIG.

  Hereinafter, with reference to FIG. 1 thru | or FIG. 3, the radiation thermometer 10 which is the temperature measuring apparatus which is an exemplary aspect of this invention is demonstrated. Here, FIG. 1 is a schematic block diagram showing a radiation thermometer 10 of the present invention. FIG. 2 is a schematic sectional view showing the relationship between the radiation thermometer 10 shown in FIG. FIG. 3 is a schematic sectional view showing another relationship between the radiation thermometer 10 shown in FIG. In FIG. 2, the control unit 50 is omitted.

  The radiation thermometer 10 is a measurement system that measures temperature using electromagnetic waves (heat radiation light) radiated from the measurement object X, and includes a sensor rod 20, a filter 30, a radiation detector 40, and a control unit 50. Have The sensor rod 20 is connected to the radiation detector 40 via the filter 30, and the radiation detector 40 is electrically connected to the control unit 50. Typically, the radiation thermometer 10 causes thermal radiation light emitted from the measurement object X to enter the sensor rod 20, transmits the incident light, and introduces the incident light to the radiation detector 40 through the filter 30. The radiation detector 40 detects the radiant intensity (luminance) of the heat radiation light and transmits it as electrical information to the control unit 50, and the control unit 50 processes based on this information to calculate the temperature of the measurement object X. In addition, in the radiation thermometer 10 of a present Example, it is possible to abbreviate | omit a chopper, the motor for rotationally driving the said chopper, etc., and the minimum comparatively cheap structure is employ | adopted. Further, if the radiation thermometer 10 of the present invention is incorporated into an external device and used, the control unit 50 may be replaced with a control mechanism of the external device.

  The sensor rod 20 is an optical system that transmits heat radiation light to the detector 40, and is composed of, for example, a quartz rod having a diameter of 4 mm. As shown in FIG. 2, the sensor rod 20 has one end 24 connected to the filter 30 (or connected to the radiation detector 40 via the filter 30), and the other end 22 is connected to the object X to be measured. It is arranged in the vicinity. Quartz and sapphire are used because they have good heat resistance and good optical properties, but it goes without saying that the material of the sensor rod 20 is not limited to these.

  The sensor rod 20 transmits the heat radiation light from the tip of the end portion 22 and is transmitted through the sensor rod 20 by transmitting the heat radiation light radiated from the measurement object X to the filter 30 (radiation detection via the filter 30). To the device 40). The sensor rod 20 is excellent in light collection efficiency because it can guide the heat radiation light once incident on the inside to the optical fibers 220A and 220B with almost no attenuation. . By bringing the rod 20 close to the measured object X, the sensor rod 20 receives the radiated light from the measured object X and guides it to the detector via the filter 30.

  However, in a conventional temperature measurement method using a radiation thermometer, the end 22 of the sensor rod 20 is provided in an open space, and the desired measured object called thermal radiation light and stray light radiated from the measured object X is obtained. Measurement was performed in a state where elements other than the emitted light from X existed in the same space. In the temperature measurement in this state, the light incident from the end 22 of the sensor rod 200 includes light emitted from the measured object X and stray light, and the stray light becomes noise and causes a decrease in measurement accuracy. It was. Therefore, the present inventors form a space in which only the heat radiation light radiated from the measurement object X exists, and arrange the end 22 of the sensor rod 20 in the space to block stray light and increase the measurement accuracy. I thought.

  More specifically, as shown well in FIG. 2, a space 70 including at least a part of the measurement object X is formed by a shielding portion 60 having a function of shielding light, and the sensor rod 20 is formed in the space 70. The end 22 was configured to be inserted. The shielding part 60 has, for example, a U-shaped cross section, and forms an atmosphere different from the open space where the measured object X exists by bringing the U-shaped opening side into airtight contact with the measured object. And block stray light. In the present embodiment, the shielding portion 60 has a U-shaped cross section, but does not mean that the configuration of the present invention is limited to this, and can be appropriately changed to other shapes. The shield 60 is preferably formed from the same member as the measured object X. If the measured object is a member that easily transmits stray light, a shielding film or the like is applied to the side surface to block the stray light. There is a need. By configuring the shielding unit 60 from the same material as the object to be measured, it is possible to prevent the measurement accuracy from being lowered by the thermal radiation emitted from another member. However, the structure and material of the shielding part 60 are not limited to the above, and other structures are not excluded as long as stray light can be blocked. For example, as shown in FIG. 3, a hole in which the end 22 can be inserted is formed in the measured object X and has the same shape as the sensor rod 20, and the sensor rod 20 is inserted into the hole to form a space 70. It may be configured to do so. Further, as will be described later, any configuration that exhibits the same action as this can be applied.

  Conventionally, the measurement accuracy is lowered due to noise caused by stray light, but in this embodiment, the end portion 22 of the sensor rod 20 is arranged in an open space by forming a different atmosphere by the light shielding portion 60 and shielding stray light. The effect of stray light can be eliminated more than the case. Therefore, it is possible to accurately measure the temperature of the measurement object.

  Furthermore, the present inventor considered that it is necessary to thoroughly examine the radiation characteristics of the members used for the object to be processed in order to find the cause of the measurement error of the radiation thermometer. Therefore, the present inventor measured the emissivity with respect to the wavelength for the member used for the object to be processed, using temperature as a parameter. From these measurement results, there are locations where the emissivity with respect to the wavelength shows almost the same value regardless of the temperature (for example, quartz or silicon carbide) in a specific member. We found that there is a magnitude in the rate value. That is, in the temperature measurement using a radiation thermometer, the use of thermal radiation having a wavelength with low emissivity, that is, low radiation energy, is sufficiently considered to be noise.

  Therefore, the present inventor considered that temperature measurement with high accuracy is possible by selecting thermal radiation light having a low noise, that is, having a wavelength with high emissivity, and performing temperature measurement with such radiation light. Therefore, the radiation thermometer 10 of the present invention is characterized by having a filter 30 for selecting heat radiation light used for temperature measurement.

  The filter 30 is located between the sensor rod 20 and the radiation detector 40, and has a function as a selection unit that selects radiation light introduced into the radiation detector 40 according to the wavelength. The filter 30 is, for example, a wavelength filter such as an ND filter, and any known technique can be applied, and detailed description thereof is omitted here. The filter 30 is sufficient to limit the radiation light introduced into the radiation detector 40, and the position where the filter 30 is disposed is disposed between the end 24 of the sensor rod 20 and the radiation detector 40. It is not limited. For example, it may be at an arbitrary location in the waveguide of the sensor rod 20.

  In this embodiment, the filter 30 is set so as to select a wavelength having a wavelength region exhibiting a high emissivity from the thermal radiation emitted from the measurement object X. The emissivity with respect to the wavelength of the exemplary measurement object X is shown in FIGS. Here, FIG. 4 is a diagram showing the emissivity with respect to the wavelength of quartz when temperature and member thickness are used as parameters. FIG. 5 and FIG. 6 are graphs showing emissivity with respect to wavelengths of SiC (silicon carbide) and AlN (aluminum nitride) when temperature and material thickness are used as parameters. 4 to 6 are attached to the present application as color drawings for convenience of understanding.

  For example, referring to FIG. 4, quartz exhibits a substantially uniform emissivity with respect to the wavelength even when the temperature and the thickness of the member change, and it is 4.5 to 7.4 μm or 9.0 to 19.0 μm. It can be easily understood that thermal radiation in the wavelength region always shows high emissivity. The wavelength region exhibiting high emissivity has higher radiant energy than the wavelength exhibiting low emissivity, and there is less noise. By selecting one wavelength existing in such a region and allowing it to pass through the filter 30, it becomes possible to allow the radiation detector 40, which will be described later, to pass radiation with high emissivity and low noise. From FIG. 5, SiC shows high reflectivity in the wavelength region of 4.3 to 10.5 μm and 12.5 to 20.0 μm. Furthermore, as shown in FIG. 6, AlN shows high reflectance in the wavelength regions of 5.0 to 11.0 μm and 17.0 to 25.0 μm. Even in SiC and AlN, by selecting one wavelength and passing through the filter 30 in such a region, the radiation detector 40 described later can pass a wavelength with high emissivity, high emissivity, and low noise. It becomes possible.

  In the present embodiment, the filter 30 is used to select the wavelength introduced into the radiation detector 40. However, the present invention is not limited to this, and any known technique can be applied. Needless to say. Further, as will be described later, a plurality of filters 30 may be used. Moreover, the structure which enabled the control part 50 to control the wavelength range which the filter 30 restrict | limits may be sufficient.

The radiation detector 40 includes an imaging lens (not shown), a Si photocell, and an amplification circuit, and converts radiation light incident on the imaging lens into a voltage, that is, an electrical signal representing radiation intensity E ₁ (T) described later. The data is sent to the control unit 50.

The control unit 50 includes a CPU and a memory, and calculates a temperature T of the measurement object X based on a radiation intensity E ₁ (T) described later. More specifically, the light enters from the end 22 of the sensor rod 20, is transmitted to the radiation detector 40 through the filter 30, and is sent to the control unit 50 as electrical information. The radiant intensity (or luminance) of the thermal radiation transmitted by the sensor rod 210 is expressed by the following formula 2, respectively.

Here, E ₁ (T) is the radiation intensity from the measured object at the temperature T determined by the detector 230, and E _BB (T) is the radiation intensity of the black body at the temperature T. Equation 2 is derived from Planck's equation.

Here, σ is referred to as a Stefan-Boltzmann constant, σ = 5.67 × ¹⁰⁻⁸ (W / m ² · K ⁴ ), and Equation 3 is derived from the Stefan-Boltzmann law.

The control unit 50 substitutes the emissivity corresponding to the transmission wavelength of the filter 220 into ε of Equation 2 and the radiation intensity corresponding to the electrical signal sent from the radiation detector 40 into E ₁ (T), thereby radiating the radiation. The strength E _BB (T) can be determined. Therefore, the temperature T can be obtained by substituting E _BB (T) into Equation 3. In any case, the control unit 50 can obtain the temperature T of the measurement object X.

  Note that the above-described temperature measurement method is not limited to only the temperature measurement of the above-described member. Needless to say, it is applicable to all materials that can know the radiation characteristics of materials.

  If necessary, the radiation thermometer 30 may pass an optical fiber between the sensor rod 20 and the filter 30. The optical fiber may have an arbitrary length and can have a degree of freedom in measurement by the radiation thermometer 10. That is, when the distance between the sensor rod 20 and the detector 40 has a certain length, the sensor 30 can be moved without moving the filter 30, the radiation detector 40, and the control unit 50 with respect to the measurement object X in any place. Temperature measurement can be easily performed only by movement of the rod 20. Further, since the main body of the radiation thermometer 10 can be separated from the measured object X, each part of the radiation thermometer 10 is deformed by the influence of the temperature from the measured object X, and the control unit 50 is not shown. Higher measurement accuracy can be maintained by preventing adverse effects such as deterioration of circuit elements and the like. Moreover, the optical fiber can give flexibility to the light guide path, and the degree of freedom of arrangement of the radiation thermometer 10 can be further increased. Note that the optical fiber is not limited to be disposed between the sensor rod 20 and the filter 30 as long as the above-described operation is achieved. For example, the sensor rod 20 may be divided into two rods, and an optical fiber may be arranged so as to connect between them. Further, the filter 30 and the detector 40 may be connected by an optical fiber. Even if it is this structure, there can exist an effect | action similar to the optical fiber mentioned above.

  Referring to FIG. 7, a plurality of filters 30 and radiation detectors 40 may be provided. Here, FIG. 7 is a schematic side view showing another exemplary aspect of the radiation thermometer 10 shown in FIG. The radiation thermometer 10A includes a sensor rod 20A composed of a plurality of rods (sensor rods 20a to 20d), a plurality of filters 30A (filters 30a to 30d), and a plurality of radiation detectors 40A (radiation detectors 40a). To radiation detector 40d). Such a configuration is basically the same as that of the radiation thermometer 10, and a detailed description thereof will be omitted with respect to overlapping portions.

  Similarly to the radiation thermometer 10, the radiation thermometer 10A has an end 22A of a sensor rod 20A in which a plurality of sensor rods 20a to 20d as one end are bundled and arranged in a shielded space (not shown). The end portion 24A (end portion 24a to end portion 24d) is connected to the radiation detector 40A through the filter 30A. If the sensor rod 20A requires plasticity, the optical fiber described above may be connected to a single quartz rod to form a plurality of light guide paths. Further, the plurality of filters 30a to 30d constituting the filter 30A have a function of limiting the radiated light introduced into the radiation detector 40A with different wavelengths in each filter 30A. However, as described above, the filters 30a to 30d each select a wavelength having a high emissivity and any one of them is transmitted through the filter 30A. Thereby, it is possible to allow the radiation detector 40A to pass a high radiation rate and low noise thermal radiation light, for example, a plurality of wavelengths having a high radiation rate based on FIGS. In such a configuration, by increasing the number of radiation lights having different wavelengths and using a plurality of detection signals, the measurement and other errors can be averaged by the control unit 50 and the temperature can be measured more accurately than the radiation thermometer 10. A predetermined circuit may be configured between the radiation detector 40A and the control unit 50, and a signal sent from the radiation detector 40A in the circuit may be averaged.

  Hereinafter, a heat treatment apparatus 100 as another exemplary embodiment of the present invention will be described. In the drawings, the same reference numerals denote the same members. In addition, the same reference numbers with uppercase alphabets are variations of the reference numbers without alphabets, and unless otherwise specified, the reference numbers without alphabets summarize the reference numbers with uppercase alphabets. To do. Here, FIG. 8 is a schematic cross-sectional view of a heat treatment apparatus 100 as an exemplary embodiment of the present invention. As shown in FIG. 8, the heat treatment apparatus 100 includes a processing chamber (process chamber) 110, a quartz window 120, a heating unit 140, a support ring 150, a bearing 160, a permanent magnet 170, and a gas introduction unit 180. The exhaust unit 190, the radiation thermometer 200, and the control unit 300 are included. It should be noted that the structure of the lamp 130 shown in FIG. 8 is slightly simplified compared to the drawings described later.

  The processing chamber 110 is formed of, for example, stainless steel or aluminum and is connected to the window 120. The processing chamber 110 defines a processing space for performing a heat treatment on the workpiece W by the cylindrical side wall 112 and the window 120. In the processing space, a support ring 150 on which an object to be processed W such as a semiconductor wafer is placed, and a support portion 152 connected to the support ring 150 are arranged. These members will be described in the rotation mechanism of the workpiece W. In addition, a gas introduction part 180 and an exhaust part 190 are connected to the side wall 112. The processing space is maintained in a predetermined reduced pressure environment by the exhaust unit 190. A gate valve for introducing and deriving the workpiece W is omitted in FIG.

  The bottom 114 of the processing chamber 110 is connected to cooling pipes 116a and 116b (hereinafter simply referred to as “116”) and functions as a cooling plate. If necessary, the cooling plate 114 may have a temperature control function. The temperature control mechanism includes, for example, a control unit 300, a temperature sensor, and a heater, and is supplied with cooling water from a water source such as tap water. Other types of refrigerants (alcohol, galden, chlorofluorocarbon, etc.) may be used instead of the cooling water. As the temperature sensor, a well-known sensor such as a PTC thermistor, an infrared sensor, or a thermocouple can be used. The heater is configured as a heater wire wound around the cooling pipe 116, for example. The temperature of the water flowing through the cooling pipe 116 can be adjusted by controlling the magnitude of the current flowing through the heater wire.

  The window 120 is hermetically attached to the processing chamber 110 and is disposed between a lamp 130 and a workpiece W to be described later. The window 120 transmits the heat radiation light from the lamp 130 and allows the object W to be irradiated with the heat radiation light, and also maintains a differential pressure between the decompressed environment in the processing chamber 110 and the atmosphere. The window 120 is a cylindrical quartz plate having a radius of about 400 mm and a thickness of about 30 to 40 mm.

In this embodiment, a plate made of quartz is used for the window 120, but the plate may be exemplarily formed of translucent ceramics. The translucent ceramic has a maximum bending stress greater than that of quartz. For example, the maximum bending stress σ _MAX of Al ₂ O ₃ is 500 MPa, which is larger than the maximum bending stress σ _MAX of quartz of 68 MPa. Therefore, the window 120 can be made thin by forming the plate of the window 120 from translucent ceramics. Thereby, since the irradiation efficiency to the to-be-processed object W from the lamp | ramp 130 mentioned later can be improved compared with the past, high-speed temperature rising can be achieved with low power consumption. In addition, the advantage of the translucent ceramic is that the window 120 does not need to be formed in a dome shape that is curved away from the processing chamber 110 as in the prior art, and can be easily formed in a planar shape. Therefore, the quartz window formed in the dome shape is not preferable because the distance of the workpiece W from the lamp is increased, which deteriorates the directivity of the lamp. However, the window 120 is formed by forming the window 120 from translucent ceramics. It is also possible to solve the problem.

  Further, the window 120 may have a reinforcing member (or a column) made of aluminum or stainless steel (SUS) having a rectangular cross section immediately below the window 120 (the surface forming the processing space in FIG. 8). A plurality of reinforcing materials are formed, for example, linearly. However, when the reinforcing material is formed linearly, the lamp 130 is preferably arranged linearly in order to prevent the reinforcing material from shielding the heat radiation of the lamp 130, and the reinforcing material is preferably arranged in the lamp. Arranged to avoid directly below. However, the reinforcing material may have a bent shape or the like, and may be arranged concentrically like the lamp 130 of the present embodiment and bent so as to avoid a position directly below the lamp 130. Such a reinforcing material may have a configuration in which a cooling pipe (water cooling pipe) is accommodated therein, and the strength of the window 120 can be further increased.

  The reinforcing material has good thermal conductivity and is made of the same material as the processing chamber. Thereby, the reinforcing material does not become a contamination source for the workpiece W. The plate of the window 120 can be thinned by the reinforcing material. Further, the cross-sectional shape of the reinforcing material is not limited to a rectangle, and can have an arbitrary shape such as a waveform. In the case where the cooling pipe is housed in the reinforcing material, the cooling pipe has a function of cooling both the reinforcing material and the plate. The cooling pipe cools the plate and has an effect of preventing thermal deformation due to lamp light. Further, if the reinforcing material is made of aluminum, it melts or deforms at 200 to 700 ° C., and therefore appropriate temperature control is necessary. The temperature control by the cooling pipe may be the same as that of the cooling pipe 116, and any method known in the art can be applied.

  Hereinafter, the heating unit 140 of the present invention will be described with reference to FIGS. 9 to 14. 9 is a schematic bottom view of the heating unit 140 shown in FIG. 8, and FIG. 10 is an enlarged cross-sectional view showing a part of the heating unit 140 shown in FIG. 11 is a view corresponding to FIG. 10 when the lamp 130 is removed from the lamp heating unit 140 shown in FIG. 12 is a schematic cross-sectional view of the lamp 130 shown in FIG. 13 is a schematic cross-sectional view of the reflector 141 shown in FIG. 14 is a schematic bottom view of the reflector 141 shown in FIG. The heating unit 140 includes lamps 130a and 130b, reflectors 141a and 141b, and a lamp holding unit 145 as a lamp house, and has a function of a heating device that heats the workpiece W. 9 to 14 are exaggerated in order to characterize the present invention. Hereinafter, the lamp 130 will be referred to as the lamp 130a and the lamp 130b. In addition, the reflector 141 is assumed to be a generalization of the reflector 141a and the reflector 141b.

  As shown in FIGS. 9 and 10, in this embodiment, the heating unit 140 is arranged in the lamp holding unit 145 in a substantially concentric manner so that the lamp 130 and the reflector 141 correspond to the substantially circular workpiece W. And the reflector 141 is comprised so that attachment or detachment is possible with respect to the lamp holding | maintenance part 145, respectively. Further, the lamp 130 has a large-diameter lamp 130a at a position corresponding to the vicinity of the center of the workpiece W and a reflector 141a corresponding to the lamp 130a at a position corresponding to the support ring 150 and the vicinity of the end of the workpiece W. An aperture lamp 130b and a reflector 141b corresponding to the lamp 130b are arranged. Note that the arrangement of the lamps 130 will be described in detail in the lamp holding unit 145, and thus the description thereof is omitted here.

  The lamp 130 is a single end type in this embodiment, and the lamp 130 has a function of heating the workpiece W. However, the function of heating the workpiece W may use other energy sources such as a heating wire heater. Here, the single end type refers to a type of lamp having one electrode portion 132 as shown in FIG. In this embodiment, it is a halogen lamp, but the lamp of the present invention is not limited to this. The output of the lamp 130 is determined by the lamp driver 310, and the lamp driver 310 is controlled by the control unit 300 as will be described later, and supplies the lamp 130 with power corresponding thereto. In the present embodiment, the power is controlled by the control unit 300 so that the power density of the lamp 130b is larger than the power density of the lamp 130a. More specifically, the lamp 130b has a power density two to three times that of the lamp 130a.

  Typically, the lamp 130 has a substantially cylindrical shape, and includes one electrode portion 132, an intermediate portion 134, and a light emitting portion 136 connected to the electrode portion 132 through the intermediate portion 134, and the light emitting portion 136 is an intermediate portion. It has a filament 137 connected to the electrode part 132 through the part 134 and a reflection part 139. In this embodiment, the lamp 130 is formed with a thread (male thread) 131 on an outer peripheral portion inscribed in a groove 146 described later of the lamp holding portion 145. As will be described later, the groove 146 is formed with a thread 149 that can be fitted to the thread 131 of the lamp 130, and in this configuration, the lamp 130 is configured to be detachable from the lamp holding portion 145. The thread 131 is a triangular thread in this embodiment, and a substantially triangular thread is formed. The shape of the screw thread 131 is not limited to such a shape, and may be a square screw or a trapezoidal screw. However, the screw thread 131 shows an exemplary form of the lamp 130, and the shape of the lamp 130 is not limited to this.

  The electrode part 132 has a pair of electrodes 133, and the electrode 133 is a part that is electrically connected to the lamp driver 310 via the lamp holding part 145 and is also electrically connected to the filament 137. The power supplied to the electrode unit 132 is determined by the lamp driver 310, and the lamp driver 310 is controlled by the control unit 300.

  The intermediate part 134 is a cylinder which is located between the electrode part 132 and the light emitting part 136 and has a predetermined length, and separates the electrode part 132 and the light emitting part 136 from each other. The intermediate part 134 is formed integrally with the light emitting part 136 and is hermetically sealed, and a halogen gas is enclosed inside the intermediate part 134. However, the gas enclosed inside is not limited to halogen, and may be nitrogen or argon gas. In the present embodiment, the intermediate portion 134 is formed of ceramic, but may be formed of a metal material such as aluminum or SUS (stainless steel) in addition to the ceramic. The intermediate portion 134 has an advantage that such a length is preferable in temperature control of the lamp 130 described later. In addition, since the intermediate part 134 also light-emits the filament 137 located in the inside, it is a part of the light emission part 136 naturally. However, it should be understood that the electrode portion 132 and the light emitting portion 136 (the portion that emits the strongest light) are separated from each other by a predetermined distance in the present specification, so that the region is merely defined as the intermediate portion 134.

  The light emitting unit 136 is a light emitting part of the lamp 130 and has a side shape such as a hemisphere, an elliptical hemisphere, or a cylinder, and is formed of quartz or glass. As described above, the light emitting unit 136 is formed integrally with the intermediate unit 134 and is hermetically sealed, and halogen gas is also enclosed inside the light emitting unit 136. The light emitting unit 136 includes a coil 138 portion of a filament 137 that is a light source and a reflecting unit 139.

  The coil 138 can select an arbitrary type such as a single coil or a double coil, and the shape thereof can also have an arbitrary shape such as a plurality of coils arranged in parallel.

  The reflecting portion 139 has a function of reflecting the lamp light emitted from the coil 138 portion of the filament 137 in a direction away from the workpiece W, and is provided at a position facing the workpiece W via the coil 138. The reflecting portion 139 has a shape with the longitudinal axis of the lamp 130 as a vertex, for example, a conical or hemispherical shape. More specifically, the reflecting portion 139 is formed such that the locus formed by the reflecting portion 142 of the reflector 141 described later and the reflecting portion 139 of the lamp 130 has a dome shape, for example, a hemisphere, a semi-elliptical sphere, or a cone shape. Is done. By providing the reflecting portion 139 in the lamp 130, the light traveling toward the intermediate portion 134 of the lamp 130 can be reflected as described later, and the workpiece W can be efficiently irradiated with the lamp light.

  In this embodiment, since a thread 131 applicable to a groove 146 (to be described later) of the lamp holding portion 145 is formed, the lamp 130 is composed of the above-described members in consideration of the strength and workability of the intermediate portion 136. The However, the lamp 130 of the present invention is not limited to such a member, and the intermediate part 134 of the lamp 130 may be formed of a cylindrical member formed of quartz or the like, like the light emitting part 136. However, in the case of such a configuration in this embodiment, it is necessary to provide a cover material for the lamp 130 and obtain the strength of the lamp 130 with respect to the lamp holding portion 145 and workability for forming a screw thread in the cover. Such a cover material is preferably selected from members having high thermal conductivity so as not to hinder cooling of the lamp 130 described later.

  The reflector 141 is provided in the lamp holding unit 145 so as to cover the light emitting unit 136 of the lamp 130, and has a function of reflecting the lamp light of the lamp 130 toward the workpiece W. The reflector 141 has the same cylindrical shape as a groove 146 to be described later, and a thread 144 (male thread) is formed on a side surface inscribed with the groove 146. As will be described later, the groove 146 is formed with a thread 149 that can be fitted to the thread 144 of the reflector 141, and the reflector 141 is configured to be detachable from the lamp holding portion 145.

  The reflector 141 has a reflecting portion 142 that reflects the lamp light toward the workpiece W, and has an opening 143a for inserting the light emitting portion 136 of the lamp 130 into the reflecting portion 142 and an opening 143b for emitting the lamp light. Is formed. The opening 143a has substantially the same shape as the light emitting portion 136 of the lamp 130, and allows the light emitting portion 136 of the lamp 130 to be inserted into the opening 143a. On the other hand, the opening 143b has the same shape as the opening of the reflecting portion 142, and the light emitted from the coil 138 of the light emitting portion 136 and the light reflected by the reflecting portion (including the lamp 130 and the reflector 141) are processed. This is an opening for irradiating W. For example, a non-through hole or a protrusion for facilitating removal of the reflector 141 may be provided on the bottom surface of the cylinder of the reflector 141 near the opening 142b.

  The reflecting portion 142 has a dome shape that is convex in a direction away from the workpiece W so as to cover the light emitting portion 136 of the lamp 130. Such a dome shape is formed, for example, in a hemispherical shape so that light emitted from the coil 138 is directed toward the opening 143b of the reflector efficiently, more preferably in a single reflection. Note that the shape of the reflector 139 is not limited to a hemispherical shape, and other shapes are not excluded as long as such an effect can be achieved. For example, the reflector 139 may have a semi-elliptical sphere shape or a conical shape.

  Note that it is impossible for the reflecting portion 142 to form a complete dome shape by the above-described opening 143a. However, as described above, the reflecting portion 142 of the reflector 141 can cooperate with the reflecting portion 139 of the lamp 130 to form a reflecting surface having a substantially complete dome shape. Accordingly, it should be understood that such an opening 143a cannot be a factor that causes the reflection of the lamp 130 to be lost. Of course, the reflecting portion 139 of the lamp 130 may be interpreted as a part of the reflector 141.

  The reflecting portion 142 is made of, for example, Al (aluminum), and the surface of the reflecting portion 142 that covers the coil 138 is coated with a highly reflective film for efficiently reflecting light including visible light and infrared light. Has been. The coating material for the coating is Ni (nickel), Au (gold), or Rh (rhodium). As a coating method, it is possible to coat Ni, Au on the Al material, or Ni, Au, Rh, Au on the Al material in order by a plating process.

  In the present embodiment, the reflector 141 has a function of reflecting the light emitted from the coil 138 of the filament 137 toward the workpiece W by the reflecting portion 142 and the reflecting portion 139 of the lamp 130 and increasing the directivity of the lamp 130. . More specifically, the reflector 141 efficiently reflects the light emitted from the coil 138 portion of the filament 137 due to the dome shape of the reflecting portion 142 and the reflecting portion 139 of the lamp 130 described above, and is preferably reflected at least once by reflection. While irradiating the processing object W, the lamp light is condensed in a direction substantially perpendicular to the processing object W. That is, the light emitted from the lamp 130 is concentrated in the tangential range of the opening 143b of the reflector 139. That is, the lamp 130 of this embodiment is transmitted to the workpiece W with little energy loss because the number of reflections by the reflector 139 is small, and has excellent directivity. Conventionally, there has been a problem that the energy of the lamp light is reduced due to reflection loss due to the multiple reflection of the reflector, but this embodiment solves this problem. Therefore, since the lamp 130 can improve the irradiation efficiency to the workpiece W as compared with the prior art, it is possible to achieve a high temperature increase with low power consumption. The curvature and opening of the reflector 139 differ depending on the directivity required for the lamp 130.

  Referring to FIGS. 9 to 11, the lamp holding portion 145 functioning as a lamp house has a substantially rectangular parallelepiped shape, and has a groove 146 for housing each lamp 130 and a partition wall 148 positioned between the grooves 146. is doing.

  The groove 146 functions as a lamp housing portion that houses the lamp 130, and includes a groove 146a that houses the lamp 130a and a groove 146b that houses the lamp 130b. Hereinafter, the groove 146 is defined as the groove 146a and the groove 146b. The detailed shape of the groove 146 will be described later, and the arrangement of the groove 146 will be described below.

  As well shown in FIG. 9, the groove 146a is formed in the support ring in the radial direction from the center of the lamp holding portion 145 (intersection portion of the line X and line Y in the drawing), that is, the portion corresponding to the center of the workpiece W. It is formed to draw concentric circles up to 150. More specifically, the groove 146a is arranged such that the center of the groove 146a is positioned on the center of the lamp holding portion 145 and on the circumference of a plurality of concentric circles having a radius larger than the central portion by a first distance. A plurality of grooves 146a are formed. The first distance is about 0.5 to 1.5 of the half width of the radiation distribution of the lamp 130a (the width of the radiation distribution when the light intensity of the lamp 130a is half of the peak value). It is preferable to set it twice. In the present embodiment, the lamp 130a has a full width at half maximum of about 40 mm at a point (distance from the lamp 130 to the workpiece W in the present embodiment) of about 40 mm in the lamp light emission direction from the opening 143b. However, the width varies depending on the lamp used, and does not limit the present invention. Further, in this embodiment, since a cooling tube 149 described later is provided on the light emitting unit 136 side, the first distance is set to 50 mm (half width 40 mm × 1.25) which is larger than the diameter of the light emitting unit 136 of the lamp 130a. Is set. The concentric circles are assumed to be expanded to a position that does not overlap with a groove 146b described later. Moreover, it is preferable that the space | interval of each groove | channel 146a formed on one circle is formed for every 1st distance.

On the other hand, the groove 146b is formed so as to draw a plurality of concentric circles at a position corresponding to the portion where the support ring 150 and the workpiece W overlap and the vicinity thereof. More specifically, the groove 146b is a region that overlaps the support ring 150 described later and the object W, the first circle C ₁ that shows the approximate _center, a large second distance radius from the circle C ₁ The second circle C ₂ and the third circle C _{3 having} a radius smaller than the circle C ₁ by a second distance are arranged on the respective circumferences. The second distance is preferably set to about 0.5 to 1.5 times the half width of the radiation distribution of the lamp 130b. The lamp 130b exhibits a full width at half maximum of about 20 mm at a point of about 40 mm in the lamp light emission direction from the opening 143b (distance from the lamp 130 to the workpiece W in this embodiment). However, the width varies depending on the lamp used, and does not limit the present invention. Similarly to the groove 146a, since the cooling tube is provided on the light emitting part 136 side, the second distance is set to 25 mm (half-value width 20 mm × 1.25). Moreover, it is preferable that the space | interval of the groove | channel 146b formed on one circle is formed for every 2nd distance.

In this embodiment, the groove 146b is formed on _three circles C ₁ , C ₂ , and C ₃ , but the number of such circles (C ₁ , C ₂ , C ₃ ) is exemplary. As described above, the groove 146b is formed so that the lamp 130b can irradiate the portion where the support ring 150 and the workpiece W overlap and the vicinity thereof. For example, if the end portion of the specimen W is greater than the circle C _2, the grooves 146b on a circle (not shown) having a radius greater second distance is further formed on the outside of the circle C _2. Similarly, if the support ring 150 is circular C ₃ smaller than, the groove 146b on a circle (not shown) having a smaller radius by the second distance is further formed on the inside of the circle C _3.

  In the configuration described above, the lamp holding unit 145 can arrange the lamp 130a at a position corresponding to the vicinity of the center of the workpiece W, and the portion where the workpiece W and the support ring overlap and the vicinity of the portion can be arranged on the lamp 130b. When the lamp 130 is irradiated in such a state, a large irradiation area can be obtained by the lamp 130a at the center of the workpiece W. On the other hand, an irradiation area smaller than the irradiation area of the lamp 130a can be obtained by the lamp 130b in the vicinity of the end of the workpiece W.

  In this embodiment, the lamp 130b having a small diameter is arranged around the lamp 130a, so that the end portion of the workpiece W and the support ring 150 overlap each other and a narrow region near the portion is efficiently irradiated. It becomes possible. Further, as described above, the power supplied to the lamp 130b is larger than the power supplied to the lamp 130a. The energy per unit area irradiated from one lamp is larger in the lamp 130b.

  In the lamp arrangement of the conventional heat treatment apparatus, only one type of lamp is used, and it is difficult to control the irradiation area of the lamp at the center and the end of the workpiece W. The specific heat of the support ring 150 and the workpiece W is different in the portion 150 where the workpiece W and the support ring 150 overlap and in the vicinity of the portion. More specifically, the specific heat of the support ring 150 is smaller than the specific heat of the workpiece W. Therefore, such a portion has a problem that the temperature is less likely to rise than the center portion. However, in this embodiment, it is possible to efficiently heat the lamp light without leaking by irradiating the narrow area, which is the end portion of the object to be processed W, which is hard to rise in temperature, with the small-diameter lamp 130b. Further, by increasing the power density of the lamp 130b, uneven heating with the central portion can be prevented, and high-quality processing can be performed. In addition, using the large-diameter lamp 130a near the center where the temperature rises relatively easily makes it possible to obtain a wide irradiation area with the single lamp 130a. Therefore, the number of lamps 130 near the center can be reduced, and power consumption can be reduced. In the present embodiment, the above-mentioned problem is solved by using a lamp 130 having a different diameter and changing the input power.

  Note that the arrangement of the grooves 146 is not limited to being concentrically arranged, and any other arrangement state may be used as long as the above-described conditions are satisfied. For example, the grooves 146 may be arranged linearly or spirally. Also good. Further, in this embodiment, the shape of the reflecting portion 142 of the reflector 141 is a circle, so that the irradiation area of the lamp light is a circle. However, considering the concept of arranging a lamp with a large irradiation area at the center of the object W and a lamp with a small irradiation area at the end, the lamp 130 is not limited in the irradiation region. For example, the shape of the reflecting portion 142 of the reflector 141 may be changed so that the irradiation area is a triangle. The shape of the irradiation region of the lamp light is not limited to a triangle, and may be a square or other polygon such as a hexagon. In addition, any irradiation method that exhibits the same action can be applied.

  Hereinafter, the shape of the groove 146 will be described. The groove 146 has the same shape as the lamp 130, and includes a portion 146c for storing the electrode portion 132 of the lamp 130, a portion 146d for storing the intermediate portion 134, and a portion 146e for storing the reflector 141. The portion 146c connects the electrode portion 132 to the lamp driver 310 shown in FIG. 8 and not shown in FIGS. 10 and 11, and also functions as a sealing portion 146c for sealing between the two.

  The groove 146 is formed with a thread (female thread) 147 corresponding to the lamp 130 and the reflector 141 at a portion where the lamp 130 and the reflector 141 are inscribed. In this embodiment, the thread 147 is a triangular thread that is compatible with the lamp 130, and a substantially triangular thread is formed. Note that the shape of the thread is not limited to such a shape. If the thread 131 of the lamp 130 and the reflector 141 is a square screw or a trapezoidal screw, the thread 144 of the groove 146 is formed correspondingly. The The groove 146 is formed with a thread 144 so as to optimally match the lamp 130 when the lamp 130 is thermally expanded. That is, when the lamp 130 is in a normal form (not thermally expanded), the outer diameter, the inner diameter, and the thread pitch of the screw thread 147 formed in the groove 146 are the screw thread of the lamp 130 and the reflector 141. Have a size slightly larger than the outer diameter, inner diameter, and thread pitch. However, such a difference in dimensions is such that the insertion of the lamp 130 and the reflector 141 and the engagement with the groove 146 are not hindered.

  In the above-described configuration, the groove 146, the lamp 130, and the reflector 141 have a nut-bolt relationship. That is, the lamp holder 145 is inserted into the groove 146 while rotating the lamp 130, and then inserted into the groove 146 while rotating the reflector 141, so that the threads are engaged with each other, and the lamp 130 and the reflector 141 are held. When the lamp 130 and the reflector 141 are in the normal form (not thermally expanded), the corresponding threads of the lamp 130 and the reflector 141 and the groove 146 are in contact in the gravitational plane. That is, the lamp 130, the reflector 141, and the groove 146 always ensure a contact area in the thread.

  In the present invention, such a contact area is necessary for holding the lamp 130 and the reflector 141, and at the same time, the following drawbacks are solved. The groove of the conventional lamp holding part has a cylindrical shape similar to that of the lamp, and is formed so that the groove and the lamp coincide with each other when the lamp is maximized by expansion in consideration of the thermal expansion of the lamp. That is, conventionally, when the lamp has not fully expanded, the contact area with the groove is small, and the cooling efficiency of the cooling tube disposed in the lamp holding portion to cool the lamp is reduced. In the present embodiment, this is solved.

  Further, since the thread 144 of the groove 146 is slightly larger than the thread of the lamp 130 and the reflector 141, a slight space is formed in the groove 146, the lamp 130, and the reflector 141. When the lamp 130 is heated and thermally expanded, the groove 146, the lamp 130, and the reflector 141 are formed to coincide with each other, and the lamp 130 can be expanded by such a space.

  The relationship between the groove 146 of the lamp holding portion 145 having such a configuration, the lamp 130, and the reflector 141 further has the following advantages. As described above, when the input power of the lamp 130 is changed between the lamps 130a and 130b, the high output lamp has a shorter life than the low output lamp. This is because the high-power lamp has a higher temperature inside the lamp, so that the halogen cycle is not established, the filament 137 becomes thinner, and the lamp life is shortened. That is, the lamp 130b has a shorter life than the lamp 130a. Similarly, high power lamp reflectors are shorter than low power lamp reflectors. This is because the high-power lamp has a higher temperature inside the lamp, so that when the temperature becomes high in the molecular material of the Al material coating of the reflector 141, it diffuses with the base metal to form an alloy. Causes a decrease in reflectivity. That is, the reflector 141b has a shorter life than the reflector 141a.

  In the conventional lamp house, in order to replace the lamp and the reflector around the lamp house that has reached the end of its life, the lamp house including the lamp and the reflector at the center of the lamp house that can still be used must be replaced as a whole. It had the disadvantage of being uneconomical. The lamp 130, the reflector 141, and the groove 146 in this embodiment can be arbitrarily attached / detached from the lamp holding portion 145 by forming a screw thread at a portion where they are circumscribed. Therefore, it is possible to replace only a lamp or / and a reflector which have become unusable, and it is advantageous in that it is economically preferable. Further, replacing the entire lamp house has the disadvantages that the work is complicated and the maintainability is lowered, but the present invention solves such a drawback.

  It should be noted that the shapes of the lamp 130 and the reflector 141 of this embodiment are exemplary, and it is sufficient that the lamp 130 and / or the reflector 141 of the present invention can be individually attached to and detached from the lamp holding portion 145. . For example, the lamp 130 may be threaded only on the electrode portion 132. However, as described above, it is preferable to apply a thread to the entire lamp 130 as described above in order to increase the cooling effect.

  15 to 16 may be joined to the lamp holding portion 145 using a connecting member such as a screw. Here, FIG. 15 is a schematic side view showing a reflector 141c which is a modification of the reflector 141 shown in FIG. FIG. 16 is a schematic plane view of the reflector 141 shown in FIG. The reflector 141a has a reflecting portion 142a, and an opening 143c for inserting the light emitting portion 136 of the lamp 130 into the reflecting portion 142a and an opening 143d for emitting lamp light are formed. The reflector 141a has a wide opening 143c side, has a through hole in the wide portion, and is attached to the lamp holding portion 145 with a screw or the like through the through hole. It will be understood that the reflector 141 can be easily removed even in such a configuration.

  As shown in FIGS. 10 and 11, the partition wall 148 is disposed between a plurality of adjacent grooves 146 aligned concentrically. A pair of cooling pipes (water cooling pipes) 148a and 148b are inscribed along the partition wall 148 in the partition wall 148 (note that the cooling pipe 149 collectively refers to the cooling pipe 149a and the cooling pipe 149b). More specifically, the cooling tube 149 a is located at a location corresponding to the electrode portion 132 of the lamp 130, and the cooling tube 149 b is located at a location corresponding to the light emitting portion 136 and the reflector 141 of the lamp 130.

  The cooling pipe 149 is connected to a temperature control mechanism (not shown). A temperature control mechanism has a control part, a temperature sensor or a thermometer, and a heater, for example, and is supplied with cooling water from a water source such as a water supply. Other types of refrigerants (alcohol, galden, chlorofluorocarbon, etc.) may be used instead of the cooling water. For example, a well-known sensor such as a PTC thermistor, an infrared sensor, or a thermocouple can be used as the temperature sensor, and the temperature sensor or thermometer measures the wall surface temperature of the electrode portion 132 of the lamp 130 and the light emitting portion 136 or the reflector 141. To do. The heater is configured as a heater wire wound around the cooling pipe 116, for example. The temperature of the water flowing through the cooling pipe 149 can be adjusted by controlling the magnitude of the current flowing through the heater wire.

  When the electrode 133 is made of molybdenum, the cooling pipe 149a needs to maintain the temperature of the electrode part 132 at 350 ° C. or lower in order to prevent the electrode part 133 and the sealing part 143c from being damaged due to oxidation of molybdenum. is there. The cooling tube 149b needs to maintain the temperature of the light emitting unit 134 at 250 to 900 ° C. so that the intermediate unit 134 and the light emitting unit 136 maintain the halogen cycle. Here, the halogen cycle means that tungsten constituting the filament 137 evaporates and reacts with the halogen gas to produce a tungsten-halogen compound, which floats in the lamp 130. When the lamp 130 is maintained at 250 to 900 ° C., the tungsten-halogen compound maintains its state. Further, when the tungsten-halogen compound is carried near the filament 137 by convection, it is decomposed into tungsten and halogen gas due to high temperature. Thereafter, tungsten precipitates on the filament 137, and the halogen gas repeats the same reaction again. In general, the lamp 130 is devitrified (a phenomenon in which the light-emitting portion 134 becomes white) when the temperature exceeds 900 ° C., and becomes black (a tungsten-halogen compound is attached to the inner wall of the lamp 130 and becomes black when the temperature is below 250 ° C. Phenomenon). Further, the reflector 141 has a property that the material molecules of the coating coated on the reflecting portion 142 diffuse each other with an underlying metal to form an alloy at a high temperature. Since this leads to a decrease in the reflectance of the reflecting portion 142, it is necessary to maintain the reflector at a predetermined temperature or lower (for example, when Ni plating is applied, 300 ° C. or lower is preferable).

  In this embodiment, the cooling tube 149a has a halogen cycle range temperature and a common temperature for preventing oxidation of molybdenum, preferably 250 to 350 ° C., the cooling tube 149b has a halogen cycle range temperature, and a common temperature for protecting the coating layer of the reflector 141. , Preferably maintained at 250 to 300 ° C.

  In this embodiment, the lamp 130 can suppress the occurrence of devitrification and blackening. Further, the electrode portion 132 and the sealing portion 143c are prevented from being damaged by the oxidation of molybdenum of the electrode 133. In addition, the coating layer of the reflector 141 is protected and a decrease in reflectance is suppressed. Therefore, the cooling tube 149 has an advantage of extending the life of the lamp 130 and the reflector and is economically superior. Note that the contact area between the groove 146 and the lamp 130 and the reflector 141 is larger than the conventional one as described above, so that sufficient cooling efficiency can be obtained.

  In addition, you may use the method of cooling the light emission part 136 and the reflector 141 forcibly with the said well-known air cooling mechanism, for example, a blower. Further, for example, a cooling method in which a common cooling pipe capable of cooling the sealing portion 143c and the reflector 141 is provided on the partition wall 148 is also conceivable. In such a configuration, the cooling pipe is cooled to a common temperature, for example, 250 to 300 ° C., for preventing the oxidation of molybdenum, the halogen cycle range, and protecting the coating layer of the reflective portion 142. Even if it is such a structure, the effect similar to the cooling pipe 149 mentioned above can be acquired.

  Next, the radiation thermometer 200 will be described with reference to FIGS. Here, FIG. 17 is a schematic enlarged sectional view of the radiation thermometer 200 and the processing chamber 110 in the vicinity thereof. The radiation thermometer 200 is provided on the opposite side of the lamp 130 with respect to the workpiece W. However, the present invention does not exclude the structure in which the radiation thermometer 200 is provided on the same side as the lamp 130.

  The radiation thermometer 200 is attached to the bottom 114 of the processing chamber 110. A surface 114a of the bottom 114 facing the inside of the processing chamber 110 is plated with gold and functions as a reflection plate (high reflectance surface). This is because if the surface 114a is a low reflectance surface such as black, the heat of the workpiece W is absorbed and the irradiation output of the lamp 130 must be raised uneconomically. The bottom 114 has a cylindrical through hole 115.

  The radiation thermometer 200 includes a sensor rod 210, a filter 220, and a radiation detector 230. The sensor rod 210 connected to the radiation detector 220 through the filter 230 through the through hole 115 is projected into the processing space. ing. The sensor rod 210 is inserted into a through hole 115 provided in the bottom 114 of the processing chamber 110 and sealed with an O-ring 190. As a result, the processing chamber 110 can maintain a reduced pressure environment therein regardless of the through hole 115.

  In the temperature measuring method described later in this embodiment, the chopper and the motor for rotationally driving the chopper can be omitted, and a minimum and relatively inexpensive configuration is employed. The radiation thermometer 200 measures the temperature of the object to be processed W and transmits the temperature to the control unit 300, whereby the object to be processed W can be heat-treated at a predetermined temperature. In addition, the radiation thermometer 200 may have a calculating part, and it is selective whether to control the radiation thermometer 200 using either the control part 300 or the calculating part. The radiation thermometer 200 is the radiation thermometer 10 according to one aspect of the present invention described above, and the description of the overlapping parts is omitted.

  The sensor rod 210 is composed of a quartz rod. Referring to FIG. 17, the sensor rod 210 has one end 214 connected to the radiation detector 230 through the filter 220, and the other end 212 protrudes from the through-hole 115 and is disposed in the vicinity of the workpiece W. . As shown well in FIG. 10, the end portion 212 of the sensor rod 210 forms a space 218 including the workpiece W from the dome-shaped shielding portion 216 that blocks light, and the sensor rod 210 is inside the space 218. The end portion 212 is configured to be disposed. The shielding unit 216 has, for example, a U-shaped cross section, and forms an atmosphere different from that of the processing chamber 110 by airtightly contacting the U-shaped opening side to the measurement object, thereby blocking stray light.

  Conventionally, the measurement accuracy is lowered due to noise caused by stray light, but in this embodiment, the sensor rod 210 is simply placed in the space of the processing chamber 110 by forming a different atmosphere by the light shielding portion 216 and shielding stray light. You can lower the effect of stray light than you do. Therefore, it becomes possible to accurately measure the temperature of the object to be measured, increase the stability and reproducibility of the production performance, and provide a high-precision heat treatment and a high-quality wafer subjected to the heat treatment. It becomes possible. The sensor rod 210 may have an arbitrary movable mechanism. For example, the sensor rod 210 is brought into contact with the workpiece W only when necessary temperature measurement is performed, and the retraction operation is possible when temperature measurement is not performed. It may be configured to. Such a configuration can prevent the sensor rod 210 from hindering the gas treatment of the object to be processed and the rotation of the object to be processed, for example, when the gas process and the object to be processed described later are rotated. Further, as described above, the sensor rod 210 may be provided in the rotating ring 150 so as not to hinder gas processing and rotation of the object to be processed.

  The filter 220 is located between the sensor rod 210 and the radiation detector 230 and has a function of limiting radiation light introduced into the radiation detector 230 according to the wavelength. Referring to FIG. 4 again, it can be easily understood that the quartz substrate shows high emissivity in the wavelength region of 4.5 to 7.4 μm or 9.0 to 19.0 μm. In this region, by selecting one wavelength and transmitting it through the filter 220, the radiation detector 200 described later can pass a wavelength with high emissivity and low noise. Note that, from FIG. 5, the SiC substrate exhibits high reflectivity in the wavelength regions of 4.3 to 10.5 μm and 12.5 to 20.0 μm. Further, as shown in FIG. 6, the AlN substrate exhibits high reflectivity in the wavelength regions of 5.0 to 11.0 μm and 17.0 to 25.0 μm. Also in the SiC substrate and the AlN substrate, by selecting one wavelength and transmitting it through the filter 220 in such a region, the radiation detector 200 described later can pass a wavelength with high emissivity and low noise. It becomes possible.

The radiation detector 220 includes an imaging lens (not shown), a Si photocell, and an amplification circuit, and converts radiation light incident on the imaging lens into a voltage, that is, an electrical signal representing radiation intensity E ₁ (T) described later. The data is sent to the control unit 300. The radiation detector 220 may include an arithmetic circuit (not shown), and the radiation detector 220 may be configured to calculate the temperature.

  Note that the above-described temperature measurement method is not limited to only the temperature measurement of the object to be processed, and may be used for the temperature measurement of the quartz window 120, for example. Needless to say, applicable materials are not limited to the above-described members, and can be applied to all materials as long as the radiation characteristics of the materials can be known.

  As described above, in the above-described embodiment, the measurement space 218 in which the stray light is shielded by using the light shielding unit 216 is formed, but these forms can be appropriately changed as necessary. For example, the present invention can also be applied to a heat treatment apparatus 400 having a heat source as shown in FIG. Here, FIG. 18 is a schematic sectional view of a heat treatment apparatus 400 showing another temperature measurement mode of the present invention. The heat treatment apparatus 400 includes a processing chamber 410, a mounting table 420, a window 430, a heating unit 440, a shower head 450, and a radiation thermometer 460. Process.

  Referring to FIG. 18, a mounting table 420 on which the object to be processed W is mounted is disposed inside the processing chamber 410. In the present embodiment, the mounting table 420 is formed with a region 422 in which a sensor rod 462 of a radiation thermometer 460 described later can be inserted and functions as a measurement space. As well shown in FIGS. 18 and 19, the region 422 is formed as a substantially L-shaped region (open space) penetrating from the side on which the workpiece W is placed toward the side surface of the mounting table 420. Yes. Here, FIG. 19 is an enlarged cross-sectional view showing the mounting table 420 of the heat treatment apparatus 400 shown in FIG. 18 and the vicinity thereof. However, the shape of the region 422 is not limited to this description, and the region 422 is enough to be formed as a measurement space as described later and a region into which the sensor rod 462 of the radiation thermometer 460 can be inserted.

  A quartz window 420 that is hermetically connected is connected to the bottom of the processing chamber 410, and a heating unit 440 as a heating unit is provided through the window 420. The heating unit 440 includes a plurality of lamps 442 and is configured to be able to indirectly heat the workpiece W mounted on the mounting table 430 from the mounting table 420 side. In addition, a shower head 450 is disposed above the processing chamber 410. The shower head 450 includes, for example, a first shower chamber (not shown) connected to a source gas and a second shower chamber connected to an oxidizing gas made of oxygen or the like. A predetermined gas including a source gas is mixed in the first shower chamber of the shower head 450, and the gas mixed in the first shower chamber is discharged into the processing chamber 410 from a nozzle (not shown). Further, the inside of the processing chamber 410 is evacuated from an exhaust port (not shown), for example, with a vacuum pump or the like, so that a predetermined degree of vacuum can be obtained.

  The radiation thermometer 460 includes a sensor rod 462, a filter 464, and a detector 466. The radiation thermometer 460 has the same configuration as that of the radiation thermometer 200 of the above-described form, and redundant description is omitted. In the present embodiment, the radiation thermometer 460 is located outside the processing chamber 410, and only the sensor rod 462 is inserted into a predetermined position in the processing chamber 410. More specifically, the sensor rod 462 inserted into the processing chamber 410 is inserted into the space 422 of the mounting table 420 from the side surface direction, and the tip 462a of the sensor rod 462 is emitted from the workpiece W. It is inserted to a position where it can enter heat radiation light. Further, as well shown in FIG. 19, the sensor rod 462 of this embodiment efficiently transmits the heat radiation emitted from the workpiece W positioned in a direction substantially orthogonal to the axial direction to the detector. Ingenuity is given. For example, the sensor rod 462 has a tip 462a section cut at 45 ° with respect to the normal direction.

  In such a configuration, the region 422 forms a space 423 defined by the workpiece W, the mounting table 420, and the sensor rod 420. That is, it will be easily understood that this is nothing but a measurement space capable of shielding stray light according to the present invention and has the same effect as the radiation thermometer 10 described above. That is, even with such a configuration, the influence of stray light incident on the sensor rod 462 can be reduced. Therefore, according to the radiation thermometer 462 of the present invention, it is possible to accurately measure the temperature of the workpiece W, and it is possible to improve the stability and reproducibility of the production performance. It is possible to provide a high-quality wafer subjected to the above process.

  Note that the radiation thermometer capable of measuring the temperature in the space where stray light is shielded according to the present embodiment is not limited to the radiation thermometers 200 and 460 described above, and the same effect can be obtained by using any known radiation thermometer. Needless to say you can get However, using the radiation thermometer 200 of the present invention can contribute to simplification of the apparatus. In the description, the radiation thermometers 200 and 460 are configured to use only one, but the number may be changed as appropriate. In such a case, the region 422 formed in the shielding part 216 and the mounting table 420 will be changed according to the number of radiation thermometers 200 and 460.

The control unit 300 includes a CPU and a memory inside, and feedback-controls the output of the lamp 130 by recognizing the temperature T of the workpiece W and controlling the lamp driver 310. Further, as will be described later, the control unit 300 sends a drive signal to the motor driver 320 at a predetermined timing to control the rotation speed of the workpiece W. Further, as described above, the control unit 300 calculates the substrate temperature T of the workpiece W based on the radiation intensity E ₁ (T) described later. This calculation may be performed by a calculation unit (not shown) in the radiation thermometer 200. The control unit 300 can obtain the radiation intensity E _BB (T) by substituting the emissivity corresponding to the transmission wavelength of the filter 220 of the known object to be measured (the object to be processed W) into ε in Equation 2. . Therefore, the temperature T can be obtained by substituting E _BB (T) into Equation 3. In any case, the control unit 300 can obtain the temperature T of the workpiece W.

  The gas introduction unit 180 includes, for example, a gas source (not shown), a flow rate adjustment valve, a mass flow controller, a gas supply nozzle, and a gas supply path connecting them, and introduces a gas used for heat treatment into the processing chamber 110. In the present embodiment, the gas introduction unit 180 is provided on the side wall 112 of the processing chamber 110 and introduced from the side of the processing chamber 110, but the position thereof is not limited, and for example, the gas introduction unit 180 is configured as a shower head. Processing gas may be introduced from the top of the chamber 110.

The gas source is N ₂ or Ar for annealing, O ₂ , H ₂ , H ₂ O, NO _{2 for} oxidation treatment, N ₂ or NH _{3 for} nitridation treatment, NH for film formation treatment, etc. ₃ , SiH ₂ Cl ₂ , SiH ₄ or the like is used, but it goes without saying that the processing gas is not limited to these. The mass flow controller controls the gas flow rate, and has a bridge circuit, an amplifier circuit, a comparator control circuit, a flow rate control valve, etc., and measures the flow rate by detecting the heat transfer from upstream to downstream with the gas flow. To control the flow control valve. The gas supply path uses, for example, a seamless pipe or a bite joint or a metal gasket joint in the connecting portion to prevent impurities from being mixed into the supply gas from the pipe. Also, in order to prevent dust particles due to dirt and corrosion inside the pipe, the pipe is made of a corrosion-resistant material, or the inside of the pipe is insulated with PTFE (Teflon), PFA, polyimide, PBI or other insulating materials. Electrolytic polishing is performed, and further, a dust particle capturing filter is provided.

  Although the exhaust part 190 is provided substantially horizontally with the gas introduction part 180 in the present embodiment, the position and number thereof are not limited. A desired exhaust pump (a turbo molecular pump, a sputter ion pump, a getter pump, a sorption pump, a cryopump, etc.) is connected to the exhaust unit 190 together with a pressure control valve. In this embodiment, the processing chamber 110 is maintained in a reduced pressure environment. However, the present invention does not necessarily include the reduced pressure environment, and can be applied in a range of, for example, 133 Pa to atmospheric pressure. The exhaust unit 190 also has a function of exhausting helium gas before the next heat treatment.

  In the configuration of the RTP apparatus 100 shown in FIG. 8, the upper surface of the object to be processed W is heated by the lamp 130, and the bottom 114 as a cooling plate is provided on the back surface of the object to be processed W. For this reason, the structure shown in FIG. 8 has a relatively fast cooling rate, but a large amount of heat is dissipated, so that a relatively large electric power is required for rapid temperature rise. On the other hand, a method of stopping the introduction of the cooling water in the cooling pipe 116 at the time of heating can be considered, but it is not preferable because the yield is lowered.

  Therefore, as shown in FIGS. 20 to 22, the bottom 114 as a cooling plate may be replaced with a bottom 114 </ b> A configured to be movable with respect to the workpiece W. More preferably, helium gas having a high thermal conductivity is allowed to flow between the workpiece W and the bottom portion 114A during cooling in order to increase the heat dissipation efficiency. Here, FIG. 20 is a schematic cross-sectional view for explaining a bottom 114A as a cooling plate configured to be movable with respect to the workpiece W. FIG. 21 is a schematic cross-sectional view for explaining the positional relationship between the object to be processed W and the bottom portion 114A when the object to be processed W is heated in the structure of FIG. FIG. 22 is a schematic cross-sectional view for explaining the positional relationship between the target object W and the bottom 114A when the target object W is cooled in the structure of FIG. 18 to 20, the control unit 300 and the cooling pipe 116 connected to the radiation thermometer 200 are omitted.

  As shown in FIG. 20, the bottom 114 </ b> A can be moved up and down with respect to the workpiece W by an elevating mechanism 117 that has a bellows or the like for maintaining a reduced pressure environment in the processing chamber 110 and is controlled by the controller 300. . Since any structure known in the art can be applied to the lifting mechanism 117, a detailed description thereof is omitted here. Unlike the present embodiment, the workpiece W or the support ring 150 may be configured to be movable. When the workpiece W is heated, as shown in FIG. 21, the bottom 114A is lowered so as to be separated from the workpiece W, and the supply of helium gas is stopped. At this time, the distance between the workpiece W and the bottom 114 is, for example, 10 mm. Since the distance between the bottom 114A and the object to be processed W is large, the object to be processed W can be rapidly heated without being affected by the bottom 114A. The position of the bottom 114A shown in FIG. 21 is set to the home position, for example.

  When the workpiece W is cooled, as shown in FIG. 22, the bottom 114A is raised so as to be close to the workpiece W and the supply of helium gas is started. Since the space between the bottom 114A and the workpiece W is narrow, the workpiece W can be cooled at high speed due to the influence of the bottom 114A. At this time, the distance between the workpiece W and the bottom 114 is, for example, 1 mm. An example of introducing the helium gas of FIG. 22 is shown in FIG. Here, FIG. 23 is a schematic enlarged sectional view of the solid line region V of FIG. As shown in the figure, the bottom 114 is provided with innumerable small holes 115a for guiding helium gas. A case 410 having a valve 400 connected to a helium gas supply pipe is connected to the bottom 114.

  In the present embodiment, the relative movement between the cooling plate 114A and the workpiece W has been described, but the present invention can also be applied to the relative movement between the workpiece W and the lamp 130.

  Hereinafter, the rotation mechanism of the workpiece W will be described with reference to FIG. In order to maintain high electrical characteristics of each element of the integrated circuit, product yield, and the like, it is required that heat treatment be performed more uniformly over the entire surface of the workpiece W. If the temperature distribution on the workpiece W is not uniform, for example, the RTP apparatus 100 is high in that the film thickness in the film deposition process becomes non-uniform or the silicon crystal slips due to thermal stress. Unable to provide quality heat treatment. The non-uniform temperature distribution on the object to be processed W may be caused by the non-uniform illuminance distribution of the lamp 130, or the processing gas introduced in the vicinity of the gas introduction part 180 takes heat from the surface of the object to be processed W. It may be caused by that. The rotation mechanism rotates the wafer to allow the workpiece W to be heated uniformly by the lamp 130.

  The rotation mechanism of the workpiece W includes a support ring 150, a ring-shaped permanent magnet 170, a magnetic body 172 such as a ring-shaped SUS, a motor driver 320, and a motor 330.

  The support ring 150 has a circular ring shape made of ceramics having excellent heat resistance, such as SiC. The support ring 150 functions as a mounting table for the workpiece W, and has a ring-shaped notch along the circumferential direction in an L-shaped cross section in the hollow circular portion. Since the notch radius is designed to be smaller than the radius of the object to be processed W, the support ring 150 can hold the object to be processed W (the rear peripheral edge thereof) in the notch. If necessary, the support ring 150 may have an electrostatic chuck or a clamp mechanism for fixing the workpiece W. The support ring 150 prevents deterioration of soaking due to heat radiation from the end of the workpiece W.

  The support ring 150 is connected to the support portion 152 at the end thereof. If necessary, a heat insulating member such as quartz glass is inserted between the support ring 150 and the support portion 152 to thermally protect a magnetic body 172 and the like described later. The support portion 152 of this embodiment is configured as a hollow cylindrical opaque quartz ring member. The bearing 160 is fixed to the support portion 152 and the inner wall 112 of the processing chamber 110, and enables the support portion 152 to rotate while maintaining the reduced pressure environment in the processing chamber 110. A magnetic body 172 is provided at the tip of the support portion 152.

  The concentrically arranged ring-shaped permanent magnets 170 and the magnetic body 172 are magnetically coupled, and the permanent magnets 170 are driven to rotate by a motor 330. The motor 330 is driven by a motor driver 320, and the motor driver 320 is controlled by the control unit 300.

  As a result, when the permanent magnet 170 rotates, the magnetically coupled magnetic body 172 rotates with the support portion 152, and the support ring 150 and the workpiece W rotate. The rotational speed is illustratively 90 RPM in the present embodiment, but in practice, the turbulent flow of gas in the processing chamber 110 and the object to be processed are provided so as to provide a uniform temperature distribution in the object W to be processed. It will be determined according to the material and size of the object to be processed W, the type and temperature of the processing gas, and the like so as not to bring about the wind cutting effect around W. The magnet 170 and the magnetic body 172 may be reversed as long as they are magnetically coupled, or both may be magnets.

  Next, the operation of the RTP device 100 will be described. A transfer arm such as a cluster tool (not shown) carries the workpiece W into the processing chamber 110 via a gate valve (not shown). When the transfer arm that supports the workpiece W arrives at the upper part of the support ring 150, a lifter pin lifting system (not shown) projects (for example, three) lifter pins (not shown) from the support ring 150 to support the workpiece W. . As a result, the support of the workpiece W is transferred from the transfer arm to the lifter pin, and the transfer arm is returned from the gate valve. Thereafter, the gate valve is closed. The transfer arm may then move to a home position (not shown).

  On the other hand, the lifter pin lifting / lowering system then returns a lifter pin (not shown) into the support ring 150, thereby placing the workpiece W at a predetermined position on the support ring 150. The lifter pin lifting / lowering system can use a bellows (not shown), thereby maintaining the decompression environment of the processing chamber 110 during the lifting / lowering operation and preventing the atmosphere in the processing chamber 102 from flowing out.

  Thereafter, the controller 300 controls the lamp driver 310 and instructs the lamp 130 to be driven. In response to this, the lamp driver 310 drives the control unit 300, and the lamp 130 heats the workpiece W to, for example, about 800 ° C. In the heat treatment apparatus 100 of the present embodiment, the object to be processed is uniformly heated by the two types of lamps 130, so that a desired high temperature increase can be obtained. The heat rays radiated from the lamp 130 are irradiated onto the upper surface of the workpiece W in the processing space via the quartz window 120, and the workpiece W is heated at a high rate of, for example, 800 ° C. at a heating rate of 200 ° C./s. To do. If the apparatus 100 uses the structure shown in FIG. 20, the bottom 114A is disposed at the home position as shown in FIG. In particular, in the structure shown in FIG. 21, the workpiece W is separated from the bottom 114A, which is a cooling plate, and is not easily affected by the structure. At the same time before or after heating, the exhaust unit 190 maintains the pressure in the processing chamber 110 in a reduced pressure environment.

  At the same time, the controller 300 controls the motor driver 320 and commands the motor 330 to be driven. In response to this, the motor driver 320 drives the motor 330, and the motor 330 rotates the ring-shaped magnet 170. As a result, the support portion 152 (or 152A) rotates, and the workpiece W rotates with the support ring 150. Since the workpiece W rotates, the in-plane temperature is maintained uniformly during the heat treatment period.

  The temperature of the workpiece W is measured by the radiation thermometer 200, and the control unit 300 feedback-controls the lamp driver 310 based on the measurement result. Since the workpiece W is rotating, the surface temperature distribution is expected to be uniform, but if necessary, the radiation thermometer 200 can set the temperature of the workpiece W at a plurality of locations (for example, If the radiation thermometer 200 determines that the temperature distribution on the object to be processed W is not uniform, the control unit 300 can detect a lamp in a specific area on the object to be processed W. The lamp driver 310 can also be instructed to change the 130 output.

  Since the radiation thermometer 200 has a simple structure that does not use a chopper, an LED, or the like, the radiation thermometer 200 is inexpensive and contributes to the downsizing and economic efficiency of the device 100. In addition, since the wavelength measuring method of the present invention selects and detects a wavelength having a high emissivity, the temperature measurement accuracy is high. When the object to be processed W is left in a high temperature environment for a long time in the heat treatment, the impurities diffuse and the electrical characteristics of the integrated circuit are deteriorated. Therefore, high-speed temperature rise and high-speed cooling are required. However, the effective emissivity calculation method of this embodiment meets this requirement. As a result, the RTP apparatus 100 can provide high-quality heat treatment.

  Next, a process gas whose flow rate is controlled is introduced into the process chamber 110 from a gas introduction unit (not shown). When a predetermined heat treatment (for example, 10 seconds) is completed, the controller 300 instructs the lamp driver 310 to stop heating the lamp 130. In response to this, the lamp driver 310 stops driving the lamp 130. If the apparatus 100 uses the structure shown in FIG. 20, the controller 300 controls the lifting mechanism 117 to move the bottom 114A to the cooling position shown in FIG. Preferably, helium gas having high thermal conductivity is introduced between the workpiece W and the bottom 114A as shown in FIG. Thereby, the cooling efficiency of the to-be-processed object W becomes high, and high-speed cooling can be performed with comparatively low power consumption. The cooling rate is, for example, 200 ° C./s.

  After the heat treatment, the object to be processed W is led out of the processing chamber 110 from the gate valve by the transfer arm of the cluster tool in the reverse procedure as described above. Next, if necessary, the transfer arm transfers the workpiece W to the next stage apparatus (film forming apparatus or the like).

  Although the preferred embodiments of the present invention have been described above, the present invention can be variously modified and changed within the scope of the gist thereof.

DESCRIPTION OF SYMBOLS 10 Radiation thermometer 20 Sensor rod 30 Filter 40 Radiation detector 50 Control part 70 Space 60 Shielding part 100 Heat processing apparatus 110 Processing chamber 120 Quartz window 130 Lamp 140 Heating part 145 Lamp holding part 150 Support ring 160 Bearing 170 Magnet 180 Gas introduction part 190 Exhaust unit 200 Radiation thermometer 300 Control unit 310 Lamp driver

In order to achieve the above object, a temperature measurement method according to one aspect of the present invention includes a step of selecting the thermal radiation having a wavelength in a predetermined region from thermal radiation emitted from a measurement object; and the selection using the heat radiation having a wavelength selected predetermined regions in the step have a calculating a temperature, the object to be measured is a silica, the predetermined wavelength region is 4.5 to 7 .4 μm or 9.0 to 19.0 μm .
According to another aspect of the present invention, there is provided a temperature measuring method comprising: selecting the thermal radiation having a wavelength in a predetermined region from thermal radiation emitted from a measurement object; and the predetermined selected in the selection step. And calculating a temperature using the thermal radiation having a wavelength in a region, wherein the measured object is silicon carbide, and the predetermined wavelength region is 4.3 to 10.5 μm or 12.5 Or 20.0 μm.
According to another aspect of the present invention, there is provided a temperature measuring method comprising: selecting the thermal radiation having a wavelength in a predetermined region from thermal radiation emitted from a measurement object; and the predetermined selected in the selection step. Calculating a temperature using the thermal radiation having a wavelength in a region, wherein the object to be measured is aluminum nitride, and the predetermined wavelength region is 5.0 to 11.0 μm and 17.0. Or 25.0 μm.
Such a temperature measurement method includes a step of selecting thermal radiation having a wavelength in a predetermined region of radiation emitted from the measurement object, so that the wavelength from a wavelength region exhibiting a high emissivity, that is, a wavelength region with less noise. And the temperature can be calculated using thermal radiation having such a wavelength. Therefore, temperature measurement with higher accuracy than before can be performed. As the wavelength of the predetermined region, it is preferable to select a wavelength region having a high emissivity of the object to be measured .

A temperature measuring device according to another aspect of the present invention is a temperature measuring device that measures the temperature using thermal radiation emitted from a measurement object, and selects a wavelength in a predetermined region of the thermal radiation. possess a part, and a detector for detecting the heat radiation having a wavelength selected predetermined regions by the selection unit, the object to be measured is a silica, the predetermined wavelength region is 4.5 Or 7.4 μm or 9.0 to 19.0 μm .
A temperature measuring device according to another aspect of the present invention is a temperature measuring device that measures the temperature using thermal radiation emitted from a measurement object, and selects a wavelength in a predetermined region of the thermal radiation. And a detector that detects the thermal radiation having the wavelength of the predetermined region selected by the selection unit, the object to be measured is silicon carbide, and the predetermined wavelength region is 4. 3 to 10.5 μm or 12.5 to 20.0 μm.
A temperature measuring device according to another aspect of the present invention is a temperature measuring device that measures the temperature using thermal radiation emitted from a measurement object, and selects a wavelength in a predetermined region of the thermal radiation. And a detector for detecting the thermal radiation having the wavelength of the predetermined region selected by the selection unit, the object to be measured is aluminum nitride, and the predetermined wavelength region is 5. It is characterized by being 0 to 11.0 μm and 17.0 to 25.0 μm.
In such a temperature measuring apparatus, the temperature can be measured by the selection unit selecting thermal radiation having a wavelength in a predetermined region and detecting the thermal radiation. Such a temperature measuring apparatus can achieve the above-described temperature measuring method, and can perform accurate temperature measurement. In addition, temperature measurement is performed in a measurement space that is capable of shielding all light except the heat radiation light and includes at least a part of the measurement object. Such temperature measuring device, it is possible to shield the formed and stray another atmosphere had us the measurement space including the object to be measured, it is possible to reduce the influence of stray light than measured in open space.

A heat treatment apparatus according to another aspect of the present invention includes a treatment chamber that performs a predetermined heat treatment on a target object, a heating unit that heats the target object, a temperature measurement device that measures the temperature of the target object, a thermal processing apparatus and a control unit for controlling the heating power of the heating unit from the temperature of the workpiece measured by the temperature measuring device, the temperature measuring device, the heat radiated from the object to be processed possess a selection unit for selecting a wavelength that is present in a predetermined wavelength region of the emitted light, and a detector for detecting the heat radiation having a wavelength of the predetermined region selected by the selection unit, the object to be processed Is quartz, and the predetermined wavelength region is 4.5 to 7.4 μm or 9.0 to 19.0 μm .
A heat treatment apparatus according to another aspect of the present invention includes a treatment chamber that performs a predetermined heat treatment on a target object, a heating unit that heats the target object, a temperature measurement device that measures the temperature of the target object, A heat treatment apparatus having a control unit for controlling a heating force of the heating unit from the temperature of the object to be processed measured by the temperature measuring apparatus, wherein the temperature measuring apparatus is a heat radiated from the object to be processed. A selection unit that selects a wavelength existing in a predetermined wavelength region of the radiation light; and a detector that detects the thermal radiation light having the wavelength of the predetermined region selected by the selection unit, and the object to be processed Is silicon carbide, and the predetermined wavelength region is 4.3 to 10.5 μm or 12.5 to 20.0 μm.
A heat treatment apparatus according to another aspect of the present invention includes a treatment chamber that performs a predetermined heat treatment on a target object, a heating unit that heats the target object, a temperature measurement device that measures the temperature of the target object, A heat treatment apparatus having a control unit for controlling a heating force of the heating unit from the temperature of the object to be processed measured by the temperature measuring apparatus, wherein the temperature measuring apparatus is a heat radiated from the object to be processed. A selection unit that selects a wavelength existing in a predetermined wavelength region of the radiation light; and a detector that detects the thermal radiation light having the wavelength of the predetermined region selected by the selection unit, and the object to be processed Is aluminum nitride, and the predetermined wavelength region is 5.0 to 11.0 μm and 17.0 to 25.0 μm.
Such a heat treatment apparatus has a temperature measurement apparatus capable of achieving the above-described temperature measurement method, and exhibits the same function. Therefore, it becomes possible to accurately measure the temperature of the object to be processed , to improve the stability and reproducibility of production performance, and to provide a high-precision heat treatment and a high-quality wafer subjected to the heat treatment. It becomes possible.

The heat treatment method as another aspect of the present invention includes a step of heating an object to be processed by a heat source, a step of measuring the temperature of the object to be processed by a temperature measuring device , and the object to be processed measured by the temperature measuring device. a heat treatment method in which the temperature of the body and a step of controlling the heating power of said heat source, said measuring step, before Symbol heat radiation having a wavelength of a predetermined area from the heat radiation emitted from the object to be processed a step of selecting a using the heat emitted light have a calculating a temperature having a wavelength of the predetermined region selected in the selection step, the object to be processed is a quartz, the given The wavelength region is 4.5 to 7.4 μm or 9.0 to 19.0 μm .
The heat treatment method as another aspect of the present invention includes a step of heating an object to be processed by a heat source, a step of measuring the temperature of the object to be processed by a temperature measuring device, and the object to be processed measured by the temperature measuring device. A heat treatment method including a step of controlling a heating power of the heat source from a body temperature, wherein the measurement step includes the heat radiation light having a wavelength in a predetermined region from the heat radiation light emitted from the object to be processed. And a step of calculating a temperature using the thermal radiation having the wavelength of the predetermined region selected in the selection step, the object to be processed is silicon carbide, and the predetermined The wavelength region is 4.3 to 10.5 μm or 12.5 to 20.0 μm.
The heat treatment method as another aspect of the present invention includes a step of heating an object to be processed by a heat source, a step of measuring the temperature of the object to be processed by a temperature measuring device, and the object to be processed measured by the temperature measuring device. A heat treatment method including a step of controlling a heating power of the heat source from a body temperature, wherein the measurement step includes the heat radiation light having a wavelength in a predetermined region from the heat radiation light emitted from the object to be processed. And a step of calculating a temperature using the thermal radiation having the wavelength of the predetermined region selected in the selection step, the object to be processed is aluminum nitride, and the predetermined The wavelength regions are 5.0 to 11.0 μm and 17.0 to 25.0 μm.
Such a heat treatment method can also exhibit the same effect as the above-described temperature measurement method.

The gas source is N ₂ or Ar for annealing, O ₂ , H ₂ , H ₂ O, NO _{2 for} oxidation treatment, N ₂ or NH _{3 for} nitridation treatment, NH for film formation treatment, etc. ₃ , SiH ₂ Cl ₂ , SiH ₄ or the like is used, but it goes without saying that the processing gas is not limited to these. The mass flow controller controls the gas flow rate, and has a bridge circuit, an amplifier circuit, a comparator control circuit, a flow rate control valve, etc., and measures the flow rate by detecting the heat transfer from upstream to downstream with the gas flow. To control the flow control valve. The gas supply path uses, for example, a seamless pipe or a bite joint or a metal gasket joint in the connecting portion to prevent impurities from being mixed into the supply gas from the pipe. In order to prevent dust particles caused by dirt and corrosion inside the pipe, the pipe is made of a corrosion-resistant material, or the pipe is made of PTFE (Teflon (registered trademark) ), PFA, polyimide, PBI or other insulating materials. It is insulated, electropolished, and further includes a dust particle capturing filter.

Claims (8)

Selecting the thermal radiation having a wavelength in a predetermined region from the thermal radiation emitted from the measurement object;
Calculating a temperature using the thermal radiation having the wavelength of the predetermined region selected in the selection step. 2. The temperature measuring method according to claim 1, wherein the object to be measured is quartz, and the predetermined wavelength region is 4.5 to 7.4 μm or 9.0 to 19.0 μm. 2. The temperature measuring method according to claim 1, wherein the object to be measured is silicon carbide, and the predetermined wavelength region is 4.3 to 10.5 μm or 12.5 to 20.0 μm. 2. The temperature measuring method according to claim 1, wherein the object to be measured is aluminum nitride, and the predetermined wavelength region is 5.0 to 11.0 μm and 17.0 to 25.0 μm. A temperature measuring device for measuring temperature using thermal radiation emitted from a measurement object,
A selector for selecting a wavelength of the predetermined region of the thermal radiation light;
A temperature measurement apparatus comprising: a detector that detects the thermal radiation having the wavelength of the predetermined region selected by the selection unit. The temperature measurement device according to claim 5, wherein the temperature measurement device is capable of shielding all light except the heat radiation light and performs temperature measurement in a measurement space constituted by at least a part of the measurement object. A treatment chamber for performing a predetermined heat treatment on the workpiece;
A heating unit for heating the object to be processed;
A temperature measuring device for measuring the temperature of the object to be processed;
A heat treatment apparatus having a control unit for controlling the heating power of the heating unit from the temperature of the object to be processed measured by the radiation thermometer,
The temperature measuring device is
A selection unit for selecting a wavelength existing in a predetermined wavelength region of the thermal radiation emitted from the object to be processed;
A heat treatment apparatus comprising: a detector that detects the thermal radiation having a wavelength in the predetermined region selected by the selection unit. Heating the object to be processed with a heat source;
Measuring the temperature of the object to be processed with a temperature measuring device;
And a step of controlling a heating power of the heat source from a temperature of the object measured by the radiation thermometer,
The measurement step includes
Selecting pre-thermal radiation having a wavelength in a predetermined region from thermal radiation emitted from the measurement object;
And a step of calculating a temperature using the thermal radiation having the wavelength of the predetermined region selected in the selection step.