JP2012028602A - Automatic polishing device for semiconductor wafer and polishing method - Google Patents

Automatic polishing device for semiconductor wafer and polishing method Download PDF

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JP2012028602A
JP2012028602A JP2010166787A JP2010166787A JP2012028602A JP 2012028602 A JP2012028602 A JP 2012028602A JP 2010166787 A JP2010166787 A JP 2010166787A JP 2010166787 A JP2010166787 A JP 2010166787A JP 2012028602 A JP2012028602 A JP 2012028602A
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workpiece
plate
position information
polishing
information
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Nozomi Nitta
希 新田
Takeshi Kamiyachi
武 上谷地
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Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide an automatic polishing device and a polishing method capable of automatically measuring the thickness of a wafer being polished with high accuracy and automatically polishing it to a desired thickness.SOLUTION: An automatic polishing device comprises: a polishing surface plate; a plate provided so as to press a workpiece retained at the position facing the polishing surface plate against the polishing surface plate while rotating the workpiece; a workpiece position measurement sensor for measuring workpiece position information; a plate position measurement sensor for measuring plate position information; calculation means for calculating difference information between the workpiece position information and the plate position information; and output means for outputting the difference information calculated by the calculation means.

Description

本発明は、半導体のウェハーを所定の厚みに研磨する装置および研磨方法に関するものである。   The present invention relates to an apparatus and a polishing method for polishing a semiconductor wafer to a predetermined thickness.

半導体装置や発光ダイオード等に用いられる半導体チップは、半導体単結晶をウェハーに加工し、前記ウェハーに集積回路を形成した後に、所定の回路毎に半導体チップとして分割されて使用される。
この半導体単結晶をウェハーに加工する方法は、半導体単結晶を円筒研削装置により円柱状に加工した後に、ワイヤーソーやバンドソー等の切断装置を用いて、半導体単結晶を複数枚のウェハーに加工後、研磨加工することで所望の厚みに調整されたウェハーを得ることができる。
A semiconductor chip used for a semiconductor device, a light emitting diode, or the like is used by dividing a semiconductor single crystal into a wafer and forming an integrated circuit on the wafer, and then dividing the semiconductor chip into semiconductor chips for each predetermined circuit.
This method of processing a semiconductor single crystal into a wafer is obtained by processing a semiconductor single crystal into a plurality of wafers using a wire saw, a band saw or the like after processing the semiconductor single crystal into a cylindrical shape with a cylindrical grinding machine. Then, a wafer adjusted to a desired thickness can be obtained by polishing.

従来の研磨方法は特許文献1に記載されるように、半導体ウェハーを貼り付けたプレートを定盤に加圧し、そのプレート及び定盤を互いに回転させることにより、所望の厚みのウェハーに調整している。
この特許文献1に記載の方法では、ウェハーを所望の厚みに調整するために、研磨装置のプレートを定盤に加圧するためのエアシリンダー横に定寸装置を配設し、その定寸装置によりウェハーの研磨量を測定することで、所望のウェハー厚みに調整している。
As described in Patent Document 1, the conventional polishing method pressurizes a plate on which a semiconductor wafer is attached to a surface plate, and rotates the plate and the surface plate to adjust the wafer to a desired thickness. Yes.
In the method described in Patent Document 1, in order to adjust the wafer to a desired thickness, a sizing device is disposed beside the air cylinder for pressurizing the plate of the polishing device to the surface plate, and the sizing device By measuring the polishing amount of the wafer, it is adjusted to a desired wafer thickness.

しかしながら、この方法では、ウェハーの厚み変化量をエアシリンダーの位置が移動する量を代替的に測定しているため、研磨装置の各種部品の取り付け誤差等により実際のウェハーの厚み変化量とは大きく隔たりがあり、最終的にはウェハーを一旦プレートから取り外した後に厚みを測定し、再度、プレートに貼り付け、研磨するという作業を所望の厚みになるまで、その測定・研磨作業を繰り返す必要があり、生産性を大きく改善するには至らなかった。   However, in this method, since the amount of change in the thickness of the wafer is measured instead of the amount by which the position of the air cylinder moves, the actual amount of change in the thickness of the wafer is large due to mounting errors of various parts of the polishing apparatus. It is necessary to repeat the measurement and polishing operations until the desired thickness is obtained after measuring the thickness after removing the wafer from the plate and then attaching it to the plate and polishing it again. The productivity has not been greatly improved.

特開平9−285959号公報JP-A-9-285959

本発明は、このような課題を解決するためになされたものであり、高精度に、研磨中のウェハー厚みを自動で測定し、所望の厚みまで自動研磨できる自動研磨装置および研磨方法を提供することを目的とする。   The present invention has been made to solve such a problem, and provides an automatic polishing apparatus and a polishing method capable of automatically measuring a wafer thickness during polishing with high accuracy and automatically polishing to a desired thickness. For the purpose.

この課題を解決するための本発明の第1の発明は、定盤と、その定盤と対向する位置に保持した被加工物を回転させながら前記定盤に押圧するように設けられるプレートと、被加工物の位置情報を測る被加工物位置測定センサと、プレートの位置情報を測るプレート位置測定センサと、被加工物の位置情報とプレートの位置情報の差分情報の演算手段と、その演算手段により求められた差分情報を出力する出力手段を有し、且つ、前記被加工物位置測定センサと前記プレート位置測定センサの位置情報の取得位置間の距離が10mm以下であることを特徴とする自動研磨装置である。   The first invention of the present invention for solving this problem is a platen and a plate provided to press the platen while rotating the workpiece held at a position facing the platen, Workpiece position measurement sensor for measuring the position information of the workpiece, plate position measurement sensor for measuring the position information of the plate, calculation means for the difference information between the position information of the workpiece and the position information of the plate, and the calculation means An output means for outputting the difference information obtained by the above, and the distance between the position information acquisition positions of the workpiece position measurement sensor and the plate position measurement sensor is 10 mm or less. It is a polishing apparatus.

本発明の第2の発明は、第1の発明における位置測定センサが接触式センサであることを特徴するもので、さらにこの接触式センサを構成する接触端子が被加工物との接触面側に凸の曲率を有する曲面であることを特徴とし、被加工物位置測定用センサが、位置情報の測定時においてのみ、被加工物に接触する移動機構を備えることを特徴とする自動研磨装置である。   The second invention of the present invention is characterized in that the position measuring sensor in the first invention is a contact sensor, and the contact terminal constituting the contact sensor is further on the contact surface side with the workpiece. An automatic polishing apparatus characterized in that it is a curved surface having a convex curvature, and the workpiece position measuring sensor includes a moving mechanism that contacts the workpiece only when measuring position information. .

本発明の第3の発明は、回転する定盤と、その定盤に回転しながら押圧される被加工物を研磨する研磨方法において、被加工物の定盤との接触面の位置情報を測定すると共に、被加工物を保持したプレートの位置情報を測定し、被加工物の位置情報とプレートの位置情報の差分情報を算出して、その差分情報により被加工物の厚みを求めることを特徴とするものである。   According to a third aspect of the present invention, in a polishing method for polishing a rotating surface plate and a workpiece pressed while rotating on the surface plate, position information of a contact surface of the workpiece with the surface plate is measured. And measuring the position information of the plate holding the workpiece, calculating difference information between the position information of the workpiece and the position information of the plate, and obtaining the thickness of the workpiece from the difference information It is what.

本発明の第4の発明は、第3の発明において被加工物の定盤からの露出部分を形成して、その露出部分における位置情報を測定し、その位置情報の測定が定盤の回転数を被加工物の研磨時より遅い回転にして、位置測定センサの接触端子を接触させることにより位置情報を取得することを特徴とし、さらに位置情報を測定していないときには、位置測定センサが移動して被加工物およびプレートから接触端子を退避させていることを特徴とするものである。   According to a fourth aspect of the present invention, in the third aspect, an exposed portion of the work piece from the surface plate is formed, position information on the exposed portion is measured, and the position information is measured by the number of rotations of the surface plate. The position information is acquired by contacting the contact terminal of the position measurement sensor with the rotation speed slower than that when polishing the workpiece, and when the position information is not measured, the position measurement sensor moves. The contact terminals are retracted from the workpiece and the plate.

さらに、本発明の第5の発明は、第3の発明おける位置情報の測定が、n回測定され、n−1回とn回目の測定による位置情報の変動が10%内に収束後、その差分情報の算出を行うことを特徴とする研磨方法である。   Furthermore, in the fifth invention of the present invention, the measurement of the position information in the third invention is measured n times, and after the fluctuation of the position information due to the (n−1) th and nth measurements converges within 10%, The polishing method is characterized by calculating difference information.

本発明によれば、被加工物を高精度で安定した研磨量の測定が容易に可能であり、よって研磨作業工数の軽減を図ることが可能になる。   According to the present invention, it is possible to easily measure a polishing amount of a workpiece with high accuracy and stably, and thus it is possible to reduce the number of polishing work steps.

本発明の自動研磨装置の構成を示す説明図である。It is explanatory drawing which shows the structure of the automatic grinding | polishing apparatus of this invention. 被加工物位置測定センサの接触端子の形状を示す説明図である。It is explanatory drawing which shows the shape of the contact terminal of a workpiece position measurement sensor.

以下、本発明の自動研磨装置および自動研磨方法の実施形態を、図面を参照して説明する。
〔自動研磨装置〕
図1は、本発明の自動研磨装置を示す説明図である。図1において、1は定盤、2は定盤1に対向して設けられるシリンダー、3はプレート、4は被加工物、5は被加工物位置測定センサ、6はプレート位置測定センサである。
被加工物4は、プレート3に固定され、定盤1に押圧されている。
Hereinafter, embodiments of an automatic polishing apparatus and an automatic polishing method of the present invention will be described with reference to the drawings.
[Automatic polishing equipment]
FIG. 1 is an explanatory view showing an automatic polishing apparatus of the present invention. In FIG. 1, 1 is a surface plate, 2 is a cylinder provided facing the surface plate 1, 3 is a plate, 4 is a workpiece, 5 is a workpiece position measuring sensor, and 6 is a plate position measuring sensor.
The workpiece 4 is fixed to the plate 3 and pressed against the surface plate 1.

被加工物位置測定センサ5は、この被加工物4の定盤1に接触する面4a(すなわち研磨面にあたる)の位置を測定するように設けられ、プレート位置測定センサ6は、プレート3の被加工物固定側面3aの位置を測定するように設けられている。さらに両者の位置情報の取得位置間の距離(図1、Lで表示している距離)が10mm以下になるように設けられる。   The workpiece position measurement sensor 5 is provided so as to measure the position of the surface 4 a (that is, the polishing surface) of the workpiece 4 that contacts the surface plate 1, and the plate position measurement sensor 6 It is provided to measure the position of the workpiece fixing side surface 3a. Furthermore, the distance between the acquisition positions of the position information (the distance indicated by L in FIG. 1) is set to be 10 mm or less.

これらの被加工物位置測定センサ5およびプレート位置測定センサ6は、非接触式センサまたは接触式センサのいずれか、または両者を組み合わせて用いても良い。
非接触式センサとしてはレーザー変位計、渦電流による変位計等、公知の変位計を用いることができる。
These workpiece position measurement sensor 5 and plate position measurement sensor 6 may be either a non-contact sensor or a contact sensor, or a combination of both.
A known displacement meter such as a laser displacement meter or an eddy current displacement meter can be used as the non-contact sensor.

被加工物4の研磨精度を高精度に測定するには、被加工物4およびプレート3に直接接触し、位置を測定する接触式センサの方が望ましい。このセンサが接触式の場合には、図2に示すようにセンサ20の接触子21の形状はR面とすることにより、被加工物4との衝突角が低い角度にできるため、センサ20への衝撃をやわらげ、衝撃による測定誤差を減少させことができる。   In order to measure the polishing accuracy of the workpiece 4 with high accuracy, a contact-type sensor that directly contacts the workpiece 4 and the plate 3 and measures the position is desirable. When this sensor is a contact type, as shown in FIG. 2, the shape of the contact 21 of the sensor 20 is an R surface, so that the collision angle with the workpiece 4 can be made low. The measurement error due to the impact can be reduced.

そして、被加工物位置測定センサ5とプレート位置測定センサ6のそれぞれ位置情報を演算装置7に入力し、その差分情報を求めて被加工物4の研磨量とする。そして出力装置8に、その差分情報(研磨量)を出力する構成としている。   Then, positional information of the workpiece position measuring sensor 5 and the plate position measuring sensor 6 is input to the arithmetic unit 7, and the difference information is obtained as the polishing amount of the workpiece 4. The difference information (polishing amount) is output to the output device 8.

〔自動研磨方法〕
本発明の自動研磨装置を用いた研磨方法を図1を参照して説明する。
プレート3にワックス等により被加工物4を固定し、シリンダー2により圧力を付与し、定盤1に被加工物4を押圧する。
押圧された被加工物4の研磨を開始する前に、被加工物位置測定センサ5、およびプレート位置測定センサ6により、研磨前の被加工物4の位置とプレート3の位置を測定し、基準位置(ゼロリセット)とする。
次に、定盤1とプレート3を共に回転させ、被加工物4を研磨する。
[Automatic polishing method]
A polishing method using the automatic polishing apparatus of the present invention will be described with reference to FIG.
The workpiece 4 is fixed to the plate 3 with wax or the like, pressure is applied by the cylinder 2, and the workpiece 4 is pressed against the surface plate 1.
Before starting the polishing of the pressed workpiece 4, the workpiece position measuring sensor 5 and the plate position measuring sensor 6 measure the position of the workpiece 4 and the position of the plate 3 before polishing. Position (zero reset).
Next, the surface plate 1 and the plate 3 are rotated together to polish the workpiece 4.

被加工物位置測定センサ5およびプレート位置測定センサ6に、接触式センサを用いる場合、そのセンサは研磨量の測定時以外は、被加工物4およびプレート3との測定位置から移動し、非接触状態とすることが、センサの保護のために望ましい。
また、位置情報の測定時には、定盤1の回転数を被加工物4を研磨する際の定盤1の回転数よりも遅くした状態で測定を行うことが、測定値のバラツキを抑えるには望ましい。望ましくは5rpm以下の回転数とすることが望ましい。
When a contact type sensor is used for the workpiece position measuring sensor 5 and the plate position measuring sensor 6, the sensor moves from the measuring position of the workpiece 4 and the plate 3 and is not in contact with each other except when measuring the polishing amount. The state is desirable for the protection of the sensor.
Further, when measuring the position information, it is possible to suppress variations in the measured values by performing measurement in a state where the rotational speed of the surface plate 1 is slower than the rotational speed of the surface plate 1 when the workpiece 4 is polished. desirable. Desirably, the number of rotations is 5 rpm or less.

さらに、被加工物測定センサ5とプレート位置測定センサ6との間の距離Lは、10mm以下とすることが定盤1及びプレート3の回転による上下変動や、プレート3の傾きによる影響を受けにくくし、差分情報をより正確なものに近づけるために望ましい。   Further, the distance L between the workpiece measurement sensor 5 and the plate position measurement sensor 6 is set to 10 mm or less, which is less susceptible to vertical fluctuations due to the rotation of the surface plate 1 and the plate 3 and the inclination of the plate 3. However, it is desirable to make the difference information more accurate.

そして、その差分情報の取得は、位置情報を複数回測定し、n−1回(nは測定回数、1<n)とn回の位置情報の変動が10%内に収束後、その差分情報を取得することで、接触式センサが被加工物4およびプレート3に接触する際の衝撃による測定誤差を減少させ、精度の高い被加工物研磨量を測定することができる。
以上の研磨方法により研磨中に被加工物の研磨量を測定し、所望の研磨量に達したときに研磨を完了する。
Then, the difference information is acquired by measuring the position information a plurality of times, and after the variation of the position information of n-1 times (n is the number of times of measurement, 1 <n) and n times converge within 10%, the difference information is obtained. By acquiring the above, it is possible to reduce the measurement error due to the impact when the contact sensor contacts the workpiece 4 and the plate 3, and to measure the workpiece polishing amount with high accuracy.
The polishing amount of the workpiece is measured during the polishing by the above polishing method, and the polishing is completed when the desired polishing amount is reached.

以下、実施例を用いて本発明を詳細する。
実施例では、図1に示す自動研磨装置を用いて、直径3インチのサファイアウェハーを供試材に用い、研磨時の定盤1の回転数を45rpmの条件で研磨試験を行い、その結果を表1に示した。なお位置測定センサは両者共に接触式センサを使用した。
表1の「ΔD」(設定研磨量に対する実測値との差の割合)は、下記数1を用いて算出し、実測値は研磨されたウェハーを厚み計(キーエンス製)で測定して研磨前のウェハーの厚みから引いた値とした。
Hereinafter, the present invention will be described in detail using examples.
In the example, using the automatic polishing apparatus shown in FIG. 1, a sapphire wafer having a diameter of 3 inches was used as a test material, and the polishing test was performed under the condition that the rotation speed of the surface plate 1 at the time of polishing was 45 rpm. It is shown in Table 1. Note that both of the position measuring sensors used contact type sensors.
“ΔD” in Table 1 (the ratio of the difference from the measured value with respect to the set polishing amount) is calculated using the following formula 1, and the measured value is measured by measuring the polished wafer with a thickness meter (manufactured by Keyence) before polishing. The value was subtracted from the thickness of the wafer.

Figure 2012028602
Figure 2012028602

位置情報の取得間距離Lを9.5mmとし、測定時の定盤1の回転数を45rpmとして20分間研磨後、定盤1の回転数を2rpmとさせて測定して、差分情報を求めるための位置情報の変動幅が10%になった時に、設定研磨量に対する実測値との差の割合(ΔD)を求めた。尚、差分情報を求めるための位置情報は、位置情報の変動幅が10%になった後、1秒間隔で10回測定した平均値を位置情報とした。
表1に本実施例に係る研磨条件と、その結果を併せて示す。
To obtain the difference information by measuring the distance L between the acquisitions of the position information to 9.5 mm, polishing the surface plate 1 at the time of measurement to 45 rpm and polishing for 20 minutes, and then setting the number of rotations of the surface plate 1 to 2 rpm. When the fluctuation range of the position information of 10% became 10%, the ratio (ΔD) of the difference from the measured value with respect to the set polishing amount was obtained. In addition, the positional information for calculating | requiring difference information made the average value measured 10 times at 1-second intervals after the fluctuation width of positional information became 10% as positional information.
Table 1 shows the polishing conditions according to this example and the results.

位置情報の変動幅が10%を超える範囲で測定を行った場合の設定研磨量に対する実測値との差の割合(ΔD)を求めた。その他の条件は実施例1と同条件にて研磨を行った。表1に、その条件と測定結果を示す。   The ratio (ΔD) of the difference from the actual measurement value with respect to the set polishing amount when measurement was performed in a range where the fluctuation range of the position information exceeded 10% was obtained. Polishing was performed under the same conditions as in Example 1 for other conditions. Table 1 shows the conditions and measurement results.

位置測定センサにうず電流センサ(キーエンス製)を用いた以外は実施例1と同条件で研磨を行った。表1にその条件と測定結果を示す。   Polishing was performed under the same conditions as in Example 1 except that an eddy current sensor (manufactured by Keyence) was used as the position measurement sensor. Table 1 shows the conditions and measurement results.

(比較例1)
センサの位置情報の取得間距離Lを、15mmとした以外は実施例1と同条件で研磨を行った。表1に、その条件と研磨結果を示す。
(Comparative Example 1)
Polishing was performed under the same conditions as in Example 1 except that the distance L between acquisitions of sensor position information was set to 15 mm. Table 1 shows the conditions and polishing results.

(比較例2)
センサの位置情報の取得間距離Lを、15mmとし、位置情報の測定時に定盤1の回転数を、研磨時と同じ回転数で行った以外は実施例1と同条件で研磨を行った。表1に、その条件と研磨結果を示す。
(Comparative Example 2)
Polishing was performed under the same conditions as in Example 1 except that the distance L between acquisitions of sensor position information was 15 mm, and the rotational speed of the surface plate 1 was measured at the same rotational speed as that during polishing. Table 1 shows the conditions and polishing results.

Figure 2012028602
Figure 2012028602

表1から明らかなように、位置情報の取得間距離Lが10mmを超える比較例1、位置情報の取得間距離Lが10mmを超え、測定時に定盤の回転を遅くせずに測定した比較例2では、設定研磨量と実測値の間に大きな差が見られ、研磨精度が悪いことがわかる。一方、本発明の条件内で研磨している実施例1乃至実施例3では、設定研磨量と実測値の差が少なく研磨精度が良いことがわかる。特に、差分情報を出力する際に位置情報の変動を10%以下として行った実施例1では設定研磨量に一致した実測値が得られた。   As is clear from Table 1, Comparative Example 1 in which the distance L between the acquisitions of the position information exceeds 10 mm, and Comparative Example in which the distance L between the acquisitions of the position information exceeds 10 mm and measured without slowing the rotation of the surface plate at the time of measurement In No. 2, there is a large difference between the set polishing amount and the measured value, and it can be seen that the polishing accuracy is poor. On the other hand, it can be seen that in Examples 1 to 3 where polishing is performed within the conditions of the present invention, the difference between the set polishing amount and the measured value is small and the polishing accuracy is good. In particular, in Example 1 in which the variation in the position information was set to 10% or less when the difference information was output, an actual measurement value corresponding to the set polishing amount was obtained.

1 定盤
2 シリンダー
3 プレート
4 被加工物
5 被加工物位置測定センサ
6 プレート位置測定センサ
7 演算処理装置
8 出力装置
10 自動研磨機
20 センサ
21 接触子
L 位置情報の取得間距離
DESCRIPTION OF SYMBOLS 1 Surface plate 2 Cylinder 3 Plate 4 Workpiece 5 Workpiece position measurement sensor 6 Plate position measurement sensor 7 Arithmetic processing device 8 Output device 10 Automatic polishing machine 20 Sensor 21 Contact L Distance between acquisition of position information

Claims (9)

定盤と、
前記定盤と対向する位置に保持した被加工物を回転させながら前記定盤に押圧するように設けられるプレートと、
前記被加工物の位置情報を測る被加工物位置測定センサと、
前記プレートの位置情報を測るプレート位置測定センサと、
前記被加工物の位置情報と前記プレートの位置情報との差分情報を算出する演算手段と、
前記演算手段により求められた差分情報を出力する出力手段を有し、且つ、
前記被加工物位置測定センサと前記プレート位置測定センサの位置情報の取得位置間の距離が10mm以下であることを特徴とする自動研磨装置。
A surface plate,
A plate provided to press against the surface plate while rotating the workpiece held at a position facing the surface plate;
A workpiece position measuring sensor for measuring position information of the workpiece;
A plate position measuring sensor for measuring position information of the plate;
Calculation means for calculating difference information between the position information of the workpiece and the position information of the plate;
Output means for outputting difference information obtained by the computing means, and
An automatic polishing apparatus, wherein a distance between position information acquisition positions of the workpiece position measurement sensor and the plate position measurement sensor is 10 mm or less.
前記位置測定センサが、接触式センサであることを特徴とする請求項1記載の自動研磨装置。   The automatic polishing apparatus according to claim 1, wherein the position measurement sensor is a contact sensor. 前記接触式センサの接触端子が、被加工物との接触面側に凸の曲率を有する曲面であることを特徴とする請求項2記載の自動測定装置。   3. The automatic measuring apparatus according to claim 2, wherein the contact terminal of the contact sensor is a curved surface having a convex curvature on the contact surface side with the workpiece. 前記被加工物位置測定センサが、位置情報の測定時のみにおいて、前記被加工物に接触する移動機構を備えることを特徴とする請求項2または3記載の自動研磨装置。   The automatic polishing apparatus according to claim 2, wherein the workpiece position measurement sensor includes a moving mechanism that contacts the workpiece only when position information is measured. 回転する定盤と前記定盤に回転しながら押圧される被加工物を研磨する研磨方法において、
前記被加工物の定盤との接触面の位置情報を測定すると共に、前記被加工物を保持したプレートの位置情報を測定し、前記被加工物の位置情報と前記プレートの位置情報の差分情報を算出して、前記差分情報により前記被加工物の厚みを求めることを特徴とする研磨方法。
In a polishing method for polishing a rotating surface plate and a workpiece pressed while rotating on the surface plate,
The position information of the contact surface with the surface plate of the workpiece is measured, the position information of the plate holding the workpiece is measured, and the difference information between the position information of the workpiece and the position information of the plate And a thickness of the workpiece is obtained from the difference information.
前記被加工物の前記定盤からの露出部分を形成して、前記露出部分における前記位置情報を測定することを特徴とする請求項5記載の研磨方法。   The polishing method according to claim 5, wherein an exposed portion of the workpiece from the surface plate is formed, and the position information in the exposed portion is measured. 前記位置情報の測定が、前記定盤の回転数を被加工物の研磨時より遅い回転にして、前記位置測定センサの接触端子を接触させることにより位置情報を取得することを特徴とする請求項5または6記載の研磨方法。   The position information is measured by making the rotation speed of the surface plate slower than that during polishing of the workpiece, and obtaining the position information by contacting the contact terminals of the position measurement sensor. The polishing method according to 5 or 6. 前記位置情報を測定していないときには、前記位置測定センサが移動して被加工物および前記プレートから接触端子を退避させていることを特徴とする請求項5から7のいずれか1項に記載の研磨方法。   8. The device according to claim 5, wherein when the position information is not measured, the position measurement sensor moves to retract the contact terminal from the workpiece and the plate. 9. Polishing method. 前記位置情報が、n回測定され、n−1回とn回目の測定による位置情報の変動が10%内に収束後、前記差分情報の算出を行うことを特徴とする請求項5記載の研磨方法。   6. The polishing according to claim 5, wherein the position information is measured n times, and the difference information is calculated after fluctuations in the position information due to the (n-1) th and nth measurements converge within 10%. Method.
JP2010166787A 2010-07-26 2010-07-26 Automatic polishing device for semiconductor wafer and polishing method Pending JP2012028602A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160052221A (en) * 2014-11-04 2016-05-12 주식회사 케이씨텍 Device of measuring wafer metal layer thickness in chemical mechanical polishing apparatus and method thereof
KR101868503B1 (en) * 2010-12-27 2018-06-19 가부시키가이샤 에바라 세이사꾸쇼 Polishing apparatus and polishing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101868503B1 (en) * 2010-12-27 2018-06-19 가부시키가이샤 에바라 세이사꾸쇼 Polishing apparatus and polishing method
KR20160052221A (en) * 2014-11-04 2016-05-12 주식회사 케이씨텍 Device of measuring wafer metal layer thickness in chemical mechanical polishing apparatus and method thereof
KR101720518B1 (en) 2014-11-04 2017-03-28 주식회사 케이씨텍 Device of measuring wafer metal layer thickness in chemical mechanical polishing apparatus and method thereof

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