JP2012026741A - Probe substrate and method of manufacturing probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe card in which each contact probe on a probe substrate is electrically connected with wiring on a wiring board and a number of circuit elements can be disposed.SOLUTION: In a probe card where a probe substrate 3 is disposed on a sub substrate 2 and the sub substrate 2 and the probe substrate 3 are electrically connected, electric plating background films 17, 18 formed on the probe substrate 3 are separated from each other, a bonding electrode 12 is formed on the background film 17, and a contact probe 11 is formed on the background film 18. The bonding electrode 12 is conducted with the contact probe 11 via a resistance film 14 and is also conducted with wiring on the sub substrate 2.

Description

  The present invention relates to a method of manufacturing a probe board and a probe card. More specifically, the probe board on which a probe is formed is mounted on a wiring board, and each probe on the probe board and wiring on the wiring board are electrically connected. It relates to the probe card connected to.

  In general, when a semiconductor device is manufactured, electrical characteristics of each electronic circuit formed on a semiconductor wafer are inspected before dicing the semiconductor wafer. This inspection is performed by supplying a power source and an inspection signal to an electronic circuit to be inspected and detecting a response signal using a tester device. At this time, a probe card is used to connect a large number of minute electrodes formed on the semiconductor wafer to a large number of signal terminals of the tester device.

  The probe card includes a contact probe for making contact with the microelectrode on the semiconductor wafer, and a wiring board for making the contact probe and the tester device conductive. In addition to the contact probe, circuit elements such as a resistance element and a capacitive element are provided on the wiring board. These circuit elements are for improving inspection accuracy or protecting electronic circuits. For example, in the case of a probe card for a DRAM (Dynamic Random Access Memory) chip, about 20 resistors are used per chip. An element and about four capacitive elements are mounted.

  Here, some recent probe cards have two or more probe substrates disposed on a wiring substrate, and a plurality of contact probes are respectively formed on the probe substrate. This type of probe card has a large number of rectangular probe boards arranged on a wiring board, and this type of probe card is constructed by attaching a probe board on which a contact probe is formed on the wiring board. Therefore, there is an advantage that the probe card can be repaired by replacing the probe substrate.

  The probe card described above has a problem that it is difficult to ensure a sufficient area on the wiring board as an element area for arranging circuit elements. In particular, in the case of a probe card in which the terminal electrode on the probe substrate and the terminal electrode on the wiring substrate are electrically connected by wire bonding, it is necessary to provide a bonding region for wire bonding around the probe substrate. For this reason, it is difficult to secure a sufficient element region between the probe substrates, and there is a problem that a desired circuit element may not be arranged.

  FIG. 9 is a cross-sectional view showing a configuration of a conventional probe card. FIG. 9A shows a probe card in which the contact probe 11 is formed on the wiring board 200. On the other hand, FIG. 9B shows a probe card in which the probe board 3 is fixed on the wiring board 200 and the contact probe 11 is formed on the probe board 3.

  In the case of the probe card of FIG. 9A, since the contact probe 11 is directly formed on the wiring board 200, the element region 300 where the circuit element can be arranged is a region sandwiched between adjacent contact probes 11. It becomes. On the other hand, in the case of the probe card of FIG. 9B, the bonding electrode 12 on the probe substrate 3 and the bonding electrode 21 on the wiring substrate 200 are connected by a conductive wire 22. For this reason, the element region 302 for arranging the circuit elements is a region excluding the bonding region 301. That is, if the arrangement intervals of the contact probes 11 are the same, the area of the element region 302 in (b) is narrower by an area corresponding to the bonding region 301 than the area of the element region 300 in (a).

  The arrangement of the contact probe 11 is determined by the arrangement on the semiconductor wafer 201 of the electrode pad 202 with which the contact probe 11 abuts. For this reason, when the number of circuit elements required for inspection is large, or when the arrangement pitch of the contact probes 11 is narrow, in a probe card using wire bonding, a desired number of circuit elements are arranged on the wiring board 200. There was a problem that could not.

  The present invention has been made in view of the above circumstances, and in a probe card in which a probe board on which a probe is formed is arranged on a wiring board, a probe board and a probe card in which many circuit elements can be arranged. An object is to provide a manufacturing method.

  The probe substrate according to the first aspect of the present invention is provided on the probe substrate and provided with a first conductive region on which the probe is formed and on the probe substrate apart from the first conductive region, and an input / output terminal is formed. The second conductive region includes a first conductive region and a resistance region that connects the first conductive region and the second conductive region with a conductive member having a higher electrical resistivity than the first conductive region and the second conductive region.

  According to such a configuration, by forming a resistance region between the probe and the input / output terminal on the probe board, a resistance element is formed on the probe board, and the number of circuit elements to be mounted on the wiring board is reduced. I am letting. For this reason, more circuit elements can be mounted on the probe card to which the probe board and the wiring board are electrically connected. In particular, even when two or more probe boards are arranged on a wiring board and the distance between the probe boards is narrow, many circuit elements can be mounted on the probe card. Also, with such a configuration, a desired circuit element can be arranged even if a sufficient element region cannot be secured between the probe boards. Is particularly suitable for a probe card that conducts through a bonding wire.

  According to a second aspect of the present invention, there is provided a method of manufacturing a probe card comprising: forming a first conductive layer and a second conductive layer spaced apart from each other on a probe substrate; and a probe substrate after forming the first conductive layer and the second conductive layer. Forming a resistive film connecting the first conductive layer and the second conductive layer with a conductive member having a higher electrical resistivity than the first conductive layer and the second conductive layer; and a probe after the formation of the resistive film. Heating the substrate and annealing the resistive film at a constant temperature; after annealing the resistive film; forming a probe on the first conductive layer by electroplating; and a probe substrate after forming the probe. And a step of arranging on the wiring board.

  According to such a configuration, a part or all of the probe is formed after heat-treating the resistance film, so that the probe is not softened by the heat treatment.

  In the method for manufacturing a probe board and a probe card according to the present invention, a first conductive layer and a second conductive layer that are spaced apart from each other are provided on a probe board, and a probe and an input / output terminal are formed on these conductive layers, respectively. The input / output terminal is electrically connected to the probe through the resistance film on the probe substrate and electrically connected to the wiring substrate.

  For this reason, in the probe card to which the probe board and the wiring board are electrically connected, more circuit elements can be arranged on the probe card. Moreover, even when the interval between adjacent probe substrates is narrow, many circuit elements can be arranged on the probe card.

It is the external view which showed an example of schematic structure of the probe card 100 by embodiment of this invention. It is the enlarged view which showed the detailed structure about some probe cards 100 of FIG. It is the enlarged view which expanded and showed a part of probe card 100 of FIG. It is sectional drawing which showed the cut surface at the time of cut | disconnecting the probe board | substrate 3 of FIG. 3 by an AA cutting line and a BB cutting line. It is sectional drawing which showed an example of the manufacturing process of the probe card 100 of FIG. It is sectional drawing which showed an example of the manufacturing process of the probe card 100 of FIG. 1 (continuation of FIG. 5). It is the figure which showed an example of the element characteristic of the resistive film 14 of FIG. It is the figure which showed an example of the resistive material applicable as the resistive film 14 of FIG. It is sectional drawing which showed the structure of the conventional probe card.

  FIG. 1 is an external view showing an example of a schematic configuration of a probe card 100 according to an embodiment of the present invention, in which (a) is a plan view and (b) is a side view. The probe card 100 includes a main board 1, a sub board 2 and a probe board 3. A plurality of probe substrates 3 are aligned on the sub-substrate 2, and a plurality of contact probes 11 are formed on each probe substrate 3.

  The probe card 100 is held horizontally by a probe device (not shown) with the formation surface of the contact probe 11 facing downward, and a signal terminal of a tester device (not shown) is connected to the external terminal 10. Then, the semiconductor wafer held horizontally with the microelectrode forming surface facing upward is approached from below, and the contact probe 11 is brought into contact with the microelectrode on the semiconductor wafer, whereby the electronic circuit on the semiconductor wafer is tested. Can be conducted.

  The main board 1 is a wiring board that is detachably attached to the probe device, and here is formed of a circular printed circuit board. A sub-substrate 2 is disposed at the center of the lower surface of the main substrate 1, and a large number of external terminals 10 are formed at the periphery of the lower surface. The external terminal 10 is electrically connected to the contact probe 11 via each wiring on the main substrate 1, the sub substrate 2 and the probe substrate 3.

  The sub board 2 is a wiring board disposed on the main board 1. The sub-board 2 is a board for conducting the wiring on the main board 1 having a wide wiring pitch and the wiring on the probe board 3 having a narrow wiring pitch, and the board for such pitch conversion is ST ( Space Transformer) substrate. Further, the height of the contact probe 11 with respect to the main substrate 1 can be adjusted by interposing the sub-substrate 2 between the main substrate 1 and the probe substrate 3. Here, the sub-board 2 has a rectangular shape, its upper surface is fixed to the central portion of the main substrate 1, and a plurality of probe substrates 3 are fixed to its lower surface.

  The probe substrate 3 is an insulating substrate on which a large number of contact probes 11 are formed, and a plurality of probe substrates 3 are arranged on the common sub-substrate 2 in a state of being separated from each other. In this example, probe substrates 3 each having a vertically long rectangular shape are arranged in a matrix of 2 rows and 3 columns. By adopting such a configuration, when some of the contact probes 11 are damaged, the probe card 100 can be repaired by replacing the probe substrate 3 including the damaged contact probes 11. Moreover, manufacturing cost can be reduced by making each probe board | substrate 3 into the same structure. In general, a large number of electronic circuits having the same configuration are formed on a semiconductor wafer. For this reason, by arranging each probe substrate 3 in association with one or more electronic circuits on the semiconductor wafer, the plurality of probe substrates 3 can have the same configuration, and the manufacturing cost can be reduced.

  Each contact probe 11 is a probe that is brought into contact with a microelectrode on a semiconductor wafer. That is, they are arranged in alignment with the electrode pads of the electronic circuit to be inspected. In this embodiment, a case where the contact probe 11 is a cantilever (cantilever) type will be described. However, the present invention can be applied to a probe card including a contact probe 11 other than the cantilever type. Needless to say.

  FIG. 2 is an enlarged view showing a detailed configuration of a part of the probe card 100 of FIG. (A) in the figure is a side view showing a part of the sub-board 2 viewed from the horizontal direction with the formation surface of the contact probe 11 facing upward, and (b) in the figure is a contact probe. 11 is a plan view showing a part of the sub-substrate 2 as viewed from the formation surface side of FIG.

  The probe substrate 3 is fixed to the sub substrate 2 via an adhesive sheet, for example. A contact probe 11 and a bonding electrode 12 are formed on the probe substrate 3. The bonding electrode 12 is an input / output terminal that is electrically connected to the corresponding contact probe 11, and a plurality of bonding electrodes 12 are formed on the periphery of the probe substrate 3, and one end of the conductive wire 22 is connected thereto.

  A plurality of bonding electrodes 21 to which the other ends of the conductive wires 22 are connected are formed on the sub-substrate 2. The bonding electrodes 21 are input / output terminals that are electrically connected to the corresponding external terminals 10 of the main substrate 1, and are formed so as to face the bonding electrodes 12 on the probe substrate 3 with the peripheral edge of the probe substrate 3 interposed therebetween. . The conductive wire 22 is a thin wire made of a conductive material such as gold (Ag) formed between the corresponding bonding electrodes 12 and 21 using a bonding apparatus, and the wiring board 2 and the probe board except for both ends thereof. It is arrange | positioned so that it may leave | separate from 3 and pass through a hollow.

  In this figure, a rectangular probe substrate 3 is arranged in the left-right direction with its long sides facing each other, and a plurality of bonding electrodes 12 and 21 are arranged along the long side of the probe substrate 3, respectively. . The element region 302 is a region where components such as a protective resistor and a capacitor for protecting an electronic circuit to be inspected are mounted, and bonding between the two adjacent probe substrates 3 and one probe substrate 3 are conducted. It is formed between the electrode 21 and the bonding electrode 21 that is electrically connected to the other probe substrate 3.

  In the case of the probe card 100 in which the bonding electrode 12 on the probe substrate 3 and the bonding electrode 21 on the sub-substrate 2 are connected using the conductive wire 22, the contact probe in which the contact probe 11 is directly formed on the sub-substrate 2. As compared with the above, the width in the left-right direction of the element region 302 is narrowed by the amount that the conductive wire 22 has to be routed. Therefore, in the probe card 100 according to the present embodiment, a resistance element necessary for the inspection of the electronic circuit is formed on the probe substrate 3.

  FIG. 3 is an enlarged view showing a part of the probe card 100 shown in FIG. 2 in an enlarged manner, and shows the resistance film 14 formed on the probe substrate 3. (A) in the figure is a side view showing a part of the probe substrate 3 viewed from the horizontal direction with the formation surface of the contact probe 11 facing upward, and (b) in the figure is a contact probe. 11 is a plan view showing a part of the probe substrate 3 as viewed from the forming surface side of FIG.

  The contact probe 11 is a cantilever-type contact probe, and includes a contact portion 111 that comes into contact with an inspection object, a beam portion 112 that elastically supports the contact portion 111, and a base portion 113 that is fixed to the probe substrate 3. Consists of. The beam portion 112 has an elongated shape extending in parallel with the probe substrate 3. The base portion 113 includes a probe electrode 115 formed on the probe substrate 3 and a base leg portion 114 formed on the probe electrode 115. The probe electrode 115 and the base leg 114 are both formed by electroplating, the probe electrode 115 is a conductive film formed on the probe substrate 3 simultaneously with the bonding electrode 12, and the base leg 114 is formed by the probe electrode 115. And a conductive columnar body formed after the formation of the resistance film 14.

  The resistance film 14 is made of a conductive film made of a conductive member having a higher electrical resistivity than the contact probe 11 and the bonding electrode 12, and functions as a resistance element for conducting the probe electrode 115 and the bonding electrode 12. The resistance film 14 has an elongated shape extending in the extending direction of the beam portion 112, that is, in the left-right direction in FIG. Here, it is assumed that the thickness L1 of the resistance film 14 is thinner than the probe electrode portion 115 and the bonding electrode 12, and the width L2 of the resistance film 14 is narrower than the length L3 of the resistance film 14.

  Such a resistance film 14 is provided between the probe electrode portion 115 and the bonding electrode 12 as necessary. That is, for the contact probe 11 that does not require a resistance element, the resistance film 14 is not formed, and only one wiring pattern 16 that functions as the probe electrode 115 and the bonding electrode 12 is formed.

  FIG. 4 is a cross-sectional view showing a cut surface of the probe substrate 3 of FIG. 3, and FIG. 4A is a cross-sectional view taken along the line AA, and FIG. These are sectional drawings at the time of cut | disconnecting by a BB cutting line. Each of these cross-sectional views is a cross-sectional view including the contact probe 11, but in (a), a cross-section of the contact probe 11 to which the resistance film 14 is connected is shown, whereas in (b), The difference is that the cross section of the contact probe 11 not connected to the resistive film 14 is shown.

  As shown in FIG. 2A, when the resistance film 14 is formed, the probe electrode portion 115 and the bonding electrode 12 are formed on the electroplating base films 17 and 18 made of a conductive metal, respectively. . The base film 17 and the base film 18 are part of a conductive layer formed on the probe substrate 3 at the same time, and are composed of regions separated from each other. The bonding electrode 12 and the probe electrode portion 115 are also part of the plating layer formed at the same time, and are formed from regions separated from each other. That is, the base film 18 and the probe electrode portion 115, the base film 17, and the bonding electrode 12 are all formed in an island shape on the probe substrate 3 and separated from each other.

  The resistance film 14 is made of at least a metal having a higher electrical resistivity than the probe electrode portion 115, the bonding electrode 12, and the base films 17 and 18, and is formed between the probe electrode portion 115 and the bonding electrode 12 on the probe substrate 3. Yes. The resistance film 14 is formed on the probe substrate 3 exposed by forming the probe electrode portion 115 and the bonding electrode 12 and then removing the excess base film to separate the base films 17 and 18.

  On the other hand, as shown in (b) of the figure, when the resistance film 14 is not formed, the wiring pattern 16 composed of one continuous region is formed and used as the probe electrode portion 115 and the bonding electrode 12. The wiring pattern 16 is formed on a base film 19 for electroplating made of a conductive metal. The base film 19 has the same shape as the wiring pattern 16 and is not separated like the base films 17 and 18.

  In this manner, the contact probe 11 connected to the wiring pattern 16 without interposing the resistance film 14 on one probe substrate 3 and the contact probe 11 connected to the bonding electrode 12 with the resistance film 14 interposed therebetween. Can be mixed.

  5 and 6 are cross-sectional views showing an example of the manufacturing process of the probe card 100 of FIG. 5A to 5F show a process of forming the bonding electrode 12, the base portion 113 of the contact probe 11, and the resistance film 14, and FIGS. 6A to 6E show the contact probe 11. The step of forming the beam portion 112 and the contact portion 111 is shown.

  FIG. 5A shows a process of forming an electroplating base film 51 made of a conductive metal on the probe substrate 3 made of an insulating material. The probe substrate 3 is made of alumina (aluminum oxide), for example. The base film 51 is a seed layer made of an alloy of gold (Au) and chromium (Cr), for example, and is formed by sputtering.

  FIG. 5B shows a step of selectively forming a plating layer 52 made of a conductive metal on the probe substrate 3 after the formation of the base film 51 of FIG. 5A. By forming the island-shaped plating layer 52 on the base film 51, the bonding electrode 12 and the probe electrode 115 are formed. Specifically, a resist layer is formed on the base film 51 by applying a photoresist, and after the resist layer is patterned, the plating layer 52 is formed. After the formation of the plating layer 52, the resist layer is removed using a release agent. The plating layer 52 is made of, for example, gold (Au) and is formed by electroplating.

  FIG. 5C shows a step of selectively forming the plating layer 53 on the probe substrate 3 after the formation of the plating layer 52 of FIG. By forming the plating layer 53 on the probe electrode 115, the base leg 114 is formed. Specifically, a resist layer is formed on the entire surface of the probe substrate 3, and after the resist layer is patterned, the plating layer 53 is formed. After the formation of the plating layer 53, the resist layer is removed using a release agent. The plating layer 53 is made of a conductive metal, for example, an alloy of nickel (Ni) and cobalt (Co), and is formed by electroplating.

  FIG. 5D shows a process of removing the excess base film 51 from the probe substrate 3 after the formation of the plating layer 53 of FIG. By using the plating layer 52 as a mask and removing the excess base film 51, the base films 17 and 18 separated from each other are formed. For example, the base film 51 is removed by dry etching. As a result, the probe electrode portion 115 and the base leg portion 114 are formed on the base film 18, and the bonding electrode 12 is formed on the base film 17.

  FIG. 5E shows a step of forming a metal film 54 corresponding to the resistance film 14 on the probe substrate 3 after the removal of the base film 51 of FIG. The metal film 54 is made of a metal having a higher electrical resistivity than the base film 51 and the plating layers 52 and 53, and is formed by sputtering, for example.

  FIG. 5F shows a process of forming the resistance film 14 by patterning the metal film 54 of FIG. A resist layer is formed by applying a photoresist to the probe substrate 3 on which the metal film 54 has been formed, and after the resist layer is patterned, the metal film 54 is selectively removed by dry etching. 14 is formed. After the formation of the resistance film 14, the resist layer is removed using a release agent.

  FIG. 6A shows a process of forming the sacrificial layer 70 on the probe substrate 3 after the formation of the resistance film 14 of FIG. First, before the sacrificial layer 70 is formed, heat treatment is performed to stabilize the electrical resistance of the resistance film 14 or improve process resistance.

  Generally, the electrical resistivity of the resistive film is not a constant value simply by forming the resistive film. This electrical resistivity depends on the heat treatment temperature, and can be stabilized to a predetermined resistivity by annealing at a predetermined temperature state. That is, immediately after the formation of the resistance film, the electrical resistivity shows an extremely high state, and use as a resistance element cannot be considered, but depending on the material, the electrical resistivity may be about It shows a decrease of 4 orders of magnitude, and can be used as a resistive film having a stable electrical resistivity.

  Specifically, a heat treatment is performed to anneal the resistance film 14 by heating the probe substrate 3 on which the resistance film 14 is formed and removing the resist layer, and holding the probe substrate 3 at a predetermined temperature for a certain period of time. The temperature and time of the heat treatment are predetermined according to the material and shape of the resistance film 14.

  After this heat treatment, a sacrificial layer 70 for forming the beam portion 112 is formed on the probe substrate 3. The sacrificial layer 70 is a plating layer made of a conductive metal, for example, copper (Cu), and is formed by electroplating. After the formation of the sacrificial layer 70, the surface is polished until the plating layer 53 is completely exposed.

  FIG. 6B shows a process of forming plating layers 61, 62, 63 and sacrificial layers 71, 72, 73 on the probe substrate 3 after the formation of the sacrificial layer 70 in FIG. 6A. Yes. After the sacrificial layer 70 is formed, a resist layer is formed and patterned on the probe substrate 3 whose surface is polished, and then a plating layer 61 is formed by electroplating. After the plating layer 61 is formed, a sacrificial layer 71 is formed, and the surface is polished until the plating layer 61 is completely exposed. Thereafter, the plating layers 62 and 63 and the sacrificial layers 72 and 73 are formed by repeating the same processing procedure.

  FIG. 6C shows a step of forming the plating layer 64 on the probe substrate 3 after the formation of the sacrificial layer 73 of FIG. The plating layer 64 is formed by electroplating after forming a resist layer and patterning. If the resist layer is removed after the surface is polished after the plating layer 64 is formed, the beam portion 112 is completed. The plating layers 61 to 64 are made of an alloy of nickel (Ni) and cobalt (Co), and the sacrificial layers 71 to 73 are made of copper (Cu).

  FIG. 6D shows a process of forming the plating layers 65 and 66 constituting the contact portion 111 on the probe substrate 3 after the formation of the plating layer 64 of FIG. The plated layers 65 and 66 are formed by forming a resist layer and patterning, repeating the processing procedure of forming the plated layer by electroplating, polishing the surface, and removing the resist layer. The plating layer 65 is made of an alloy of nickel (Ni) and cobalt (Co), and the plating layer 66 is made of a metal that is harder and has higher wear resistance than the plating layer 63, for example, rhodium (Rh).

  FIG. 6E shows a step of removing the sacrificial layers 70 to 73 from the probe substrate 3 after the formation of the plating layer 66 of FIG. If the sacrificial layers 70 to 73 are removed by infiltrating the probe substrate 3 into an etching solution that selectively dissolves copper (Cu), the contact probe 11 connected to the bonding electrode 12 through the resistance film 14 is connected to the probe substrate 3. Completed above. In this example, since the heat treatment of the resistance film 14 is performed in advance, it is possible to suppress the contact probe 11 from being softened by the heat treatment.

  FIG. 7 is a diagram showing an example of element characteristics of the resistance film 14 formed on the probe substrate 3 of FIG. A resistance value of about 200 to 300Ω is required as a protective resistance for protecting the share pin of the DRAM. Therefore, as the size of the resistance film 14, since the wiring length including the probe electrode portion 115 and the bonding electrode 12 needs to be suppressed to about 200 μm, the length L3 is set to 150 μm or less, preferably about 100 μm.

  The width L2 is preferably 40 μm or less when the arrangement interval of the contact probes 11 is 50 μm, and is preferably 10 μm or more in consideration of patterning resolution and variation. The film thickness L1 is desirably 30 nm or more, which is a thickness that facilitates process control, in consideration of the influence of variation.

  In the figure, with respect to a resistance film having a length L3 = 100 μm and a width L2 = 20 μm, the resistivity is varied in the range of 100 to 300 μΩ · cm when the film thickness L1 is 30 nm and when it is 50 nm. The resistance value is shown.

  From this figure, in order to obtain the required resistance value, it can be seen that when the film thickness L1 = 30 nm, a resistance material having a resistivity of 150 μΩ · cm or more and 200 μΩ · cm or less is preferable. In addition, when the film thickness L1 = 50 nm, it is understood that a resistive material having a resistivity of 200 μΩ · cm or more and 300 μΩ · cm or less is preferable.

  FIG. 8 is a view showing an example of a resistance material applicable as the resistance film 14 formed on the probe substrate 3 of FIG. As a resistance material applicable as the resistance film 14, a resistance temperature coefficient is preferably small because the resistance value hardly changes during a high-temperature test of a semiconductor wafer and is not easily affected by a temperature rise due to Joule heat.

  Nichrome can be considered as a resistance material that satisfies such conditions. In the case of Nichrome, the width L2 may be 12.2 μm in order to obtain a resistance value of 300Ω with a film thickness L1 = 30 nm and a length L3 = 100 μm.

  Further, as a result of investigating element characteristics of the resistance material containing nickel and chromium, seven resistance materials shown in the figure were extracted. That is, as a resistance material, an alloy of nickel, chromium and aluminum (Al), a metal containing nickel, chromium, aluminum and yttrium (Y), a metal containing nickel, chromium, aluminum and silicon (Si), nickel, Two metals including chromium, aluminum, and tantalum (Ta) having different contents, a metal including nickel, chromium, and silicon, and an alloy of nickel and chromium were extracted.

  Among these resistance materials, two metals including nickel, chromium, aluminum, and tantalum are considered to be unpreferable in terms of process as the resistance film 14 because the heat treatment temperature required after film formation is as high as 530 ° C. Further, it is considered that a metal containing nickel, chromium and silicon and an alloy of nickel and chromium have a high resistance change rate of 0.1% or more in a state kept at 150 ° C., which is not preferable as the resistance film 14.

  On the other hand, an alloy of nickel, chromium and aluminum has a small resistance temperature coefficient and a heat treatment temperature as low as 300 ° C., and is therefore suitable as a resistance material constituting the resistance film 14. That is, it is desirable to form a resistance film 14 made of an alloy of nickel, chromium, and aluminum and to perform heat treatment at 300 ° C. or higher.

  According to the present embodiment, the resistance film 14 that electrically connects the contact probe 11 and the bonding electrode 12 is formed on the probe substrate 3. For this reason, the number of resistance elements to be formed on the sub-substrate 2 can be reduced, and the element region 302 that must be secured on the sub-substrate 2 can be reduced. Therefore, in the probe card in which the probe substrate 3 is mounted on the sub-substrate 2, the bonding electrode 12 on the probe substrate 3 and the bonding electrode 21 on the sub-substrate 2 are made conductive through the conductive wire 22, and the element Necessary circuit elements can be arranged in the region 30.

  In addition, the sacrificial layer 70 is formed after the resistance film 14 is heat-treated. The presence of the sacrificial layer 70 does not affect the structure provided on the probe substrate 3 by subsequent processing. Furthermore, since the resistance film 14 is formed after removing the excess base film 51 from the probe substrate 3, the resistance value of the resistance film 14 can be stabilized as compared with the case where the base film 51 is formed after the formation of the resistance film 14. And can simplify the process.

  In this embodiment, as a desirable step, after forming a part of the bonding electrode 12 and the contact probe 11 on the base film 51 and then removing the excess base film 51, the resistance film 14 is formed. Although examples have been described, the present invention is not limited to contact probes manufactured by such processes. The order of forming the base film 51, the plating layers 52 and 53 constituting the contact probe 11 and the bonding electrode 12, and the resistance film 14 may be other. For example, the base film 51 and the plating layers 52 and 53 may be formed after the formation of the resistance film 14, or the plating layer may be formed after the formation of the resistance film 14 after the formation of the base film 51. It may be a configuration.

  Further, in the present embodiment, the example in which the bonding electrode 12 on the probe substrate 3 and the bonding electrode 21 on the sub-substrate 2 are made conductive through the conductive wire 22 has been described. The probe card is not limited to be connected by wire bonding. For example, a wiring layer penetrating the probe substrate 3 is formed on the terminal electrode on the probe substrate 3 that is electrically connected to the contact probe 11 through the resistance film 14, and this wiring layer and the terminal electrode on the sub-substrate 2 are brought into contact Therefore, the terminal electrode may be electrically connected.

  In the present embodiment, an example in which the probe is formed on the conductive layer formed on the probe substrate 3 by the plating process has been described. However, the present invention provides a method for forming the probe on the probe substrate. It is not limited. For example, the present invention includes soldering a probe to a conductive layer formed on a probe substrate.

DESCRIPTION OF SYMBOLS 1 Main board | substrate 2 Sub board | substrate 3 Probe board | substrate 10 External terminal 11 Contact probe 111 Contact part 112 Beam part 113 Base part 114 Base leg part 115 Probe electrode 12 Bonding electrode 14 Resistance film 16 Wiring pattern 17-19 Underlayer film 21 Bonding electrode 22 Conductivity Wire 51, 54 Metal film (by sputtering)
52, 53, 61-66 Plating layer 70-73 Sacrificial layer 100 Probe card

Claims (2)

A first conductive region provided on the probe substrate and on which the probe is formed;
A second conductive region provided on the probe substrate apart from the first conductive region and having an input / output terminal formed thereon;
A probe substrate comprising: a resistance region that connects the first conductive region and the second conductive region with a conductive member having a higher electrical resistivity than the first conductive region and the second conductive region. Forming a first conductive layer and a second conductive layer spaced apart from each other on the probe substrate;
A resistance for connecting the first conductive layer and the second conductive layer on the probe substrate after the formation of the first conductive layer and the second conductive layer by a conductive member having a higher electrical resistivity than the first conductive layer and the second conductive layer. Forming a film;
Heating the probe substrate after the formation of the resistive film and annealing the resistive film at a constant temperature;
After annealing the resistive film, forming a probe on the first conductive layer by electroplating;
A probe card manufacturing method, comprising: a step of disposing a probe board after the formation of the probe on a wiring board.

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