JP2012023135A - Semiconductor module, and method of manufacturing semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor module and a method of manufacturing the semiconductor module capable of suppressing increase of manufacturing processes and increase in a material cost.SOLUTION: A method of manufacturing a semiconductor module includes: a step of preparing a metal plate having first and second electrode planes 110 and 120 arranged on both sides of a slit on the same plane level, and in which the first electrode plane 110 and the second electrode plane 120 are coupled partially by a coupling region bridged above a slit; a step of electrically connecting a first main electrode 21 to the first electrode plane 110 and connecting a second main electrode 22 to the second electrode plane 120 by a solder reflow in order to mount a semiconductor device 20 having the first and second main electrodes 21 and 22 on the metal plate; and a step of cutting the coupling region to separate the first electrode plane 110 and the second electrode plane 120 from each other.

Description

  The present invention relates to a semiconductor module on which a semiconductor device is mounted and a method for manufacturing the semiconductor module.

  A printed circuit board is used to mount a mount type semiconductor device such as TO-263, for example, a diode. The semiconductor devices are connected to each other by a wiring pattern arranged on the printed circuit board, or power is supplied to the semiconductor device. In addition, a semiconductor module has been proposed that realizes a heat sink that combines the functions of electrical conduction and heat dissipation of a semiconductor device by a mounting structure composed of three parts combining a conductor portion, an insulating resin block, and an elastic body (spring). (For example, refer to Patent Document 1).

Japanese Patent No. 3482198

  However, when a large current is passed through the semiconductor device, it is necessary to increase the area of the copper foil in order to cope with heat generation due to the impedance of the copper foil used for the wiring pattern of the printed circuit board. For this reason, the area of a printed circuit board becomes large.

  In order to realize the above-described mounting structure composed of three parts, it is necessary to fix these three parts in combination, and an insulating resin block and an elastic body having a complicated shape must be prepared. For this reason, material cost is expensive. Furthermore, the outer shape of the mounting structure becomes large. In addition, the lead of the semiconductor device must be soldered to the printed circuit board, and an additional process such as post soldering is required for connection with other circuits. For this reason, there existed a problem that a manufacturing process increased.

  In view of the above problems, an object of the present invention is to provide a semiconductor module in which an increase in manufacturing process is suppressed and an increase in material cost is suppressed, and a method for manufacturing the semiconductor module.

  According to one aspect of the present invention, the first and second electrode surfaces are disposed on the same plane level with the slit interposed therebetween, and the first electrode surface and the second electrode surface are bridged by the slit. Preparing a metal plate partially connected by a connection region; electrically connecting the first main electrode to the first electrode surface and the second main electrode to the second electrode surface by solder reflow; Connecting and mounting the semiconductor device having the first and second main electrodes on the metal plate, and cutting the connection region to separate the first electrode surface and the second electrode surface. A method for manufacturing a semiconductor module is provided.

  According to another aspect of the present invention, a first metal electrode plate having a first electrode surface and a second metal electrode having a second electrode surface disposed on the same plane level as the first electrode surface. A semiconductor device having a plate, a first main electrode connected to the first electrode surface, and a second main electrode connected to the second electrode surface, the first metal electrode plate being the second The first metal electrode plate has a first protrusion from the region facing the metal electrode plate toward the second metal electrode plate, and the second metal electrode plate is opposed to the first metal electrode plate. A semiconductor module is provided having a second projection directed toward it.

  ADVANTAGE OF THE INVENTION According to this invention, the increase in a manufacturing process is suppressed and the manufacturing method of a semiconductor module and the increase in material cost can be provided.

FIG. 1A is a schematic perspective view showing a structure of a semiconductor module according to an embodiment of the present invention, and FIG. 1B is a schematic view showing a structure of an insulating bush. It is a top view of the semiconductor module shown to Fig.1 (a). 3A is a front view of the semiconductor module shown in FIG. 2, and FIG. 3B is a side view. FIG. 4A is an example of an electric circuit of the semiconductor module according to the embodiment of the present invention, and FIG. 4B is another example of the electric circuit. It is another example of the electric circuit of the semiconductor module which concerns on embodiment of this invention. It is process drawing for demonstrating the manufacturing method of the semiconductor module which concerns on embodiment of this invention, Fig.6 (a) is a top view, FIG.6 (b) is a front view (the 1). FIGS. 7A and 7B are process diagrams for explaining a method of manufacturing a semiconductor module according to an embodiment of the present invention, FIG. 7A is a plan view, and FIG. 7B is a front view (No. 2). It is process drawing for demonstrating the manufacturing method of the semiconductor module which concerns on embodiment of this invention, Fig.8 (a) is a top view, FIG.8 (b) is a front view (the 3). It is a typical perspective view which shows the other structure of the semiconductor module which concerns on embodiment of this invention. It is a typical top view which shows the other example of the connection area | region of the metal plate used for the semiconductor module which concerns on embodiment of invention. It is typical sectional drawing for demonstrating the formation method of the convex part of the semiconductor module which concerns on embodiment of this invention. It is a top view which shows the structure of the semiconductor module which concerns on the modification of embodiment of this invention. FIG. 13A is a front view of the semiconductor module shown in FIG. 12, and FIG. 13B is a side view. FIG. 14A is a plan view showing the structure of a semiconductor module according to another embodiment of the present invention, and FIG. 14B is a front view. It is an example of the electric circuit of the semiconductor module which concerns on other embodiment of this invention.

  Next, an embodiment of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  The following embodiments exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention is the material, shape, structure, and arrangement of components. Etc. are not specified below. The embodiment of the present invention can be variously modified within the scope of the claims.

  A semiconductor module 1 according to an embodiment of the present invention is shown in FIGS. 1 (a), 1 (b), 2, 3 (a) and 3 (b). 2 is a front view of the semiconductor module 1 as viewed from the x direction, and a side view of the semiconductor module 1 as viewed from the y direction.

  The semiconductor module 1 includes a first metal electrode plate 11 having a first electrode surface 110 and a second metal electrode plate having a second electrode surface 120 arranged on the same plane level as the first electrode surface 110. 12 and a semiconductor device 20 having a first main electrode 21 connected to the first electrode surface 110 and a second main electrode 22 connected to the second electrode surface 120. Further, the first metal electrode plate 11 has a first protrusion 111 directed from the region facing the second metal electrode plate 12 toward the second metal electrode plate 12. Then, the second metal electrode plate 12 has a second protrusion 121 directed from the region facing the first metal electrode plate 11 toward the first metal electrode plate 11.

  The semiconductor module 1 shown in FIGS. 1 (a), 1 (b), 2, 3 (a) and 3 (b) has a first metal on both sides of one second metal electrode plate 12. In this structure, the electrode plate 11 is arranged. Three semiconductor devices 20 are connected in parallel to each other between the second metal electrode plate 12 and the first metal electrode plate 11. However, the number of the first metal electrode plates 11 and the second metal electrode plates 12 is not limited to the above. Further, the number of semiconductor devices 20 connected in parallel is not limited to three.

  The semiconductor device 20 is, for example, a diode. When the semiconductor device 20 is a diode, for example, the first main electrode 21 is an anode electrode, and the second main electrode 22 is a cathode electrode. In this case, the cathode electrode is in contact with and electrically connected to the second metal electrode plate 12, the diode is disposed on the second metal electrode plate 12, and the first main electrode which is the anode electrode of the diode 21 is electrically connected to the first metal electrode plate 11. Therefore, the semiconductor module 1 shown in FIG. 1A has a configuration in which two device rows each having three diodes arranged in parallel are connected in common to the cathode electrode. However, the semiconductor module 1 may have a configuration in which a plurality of diodes in which the first main electrode 21 is a cathode electrode and the second main electrode 22 is an anode electrode are connected in common to the anode electrode. Reference numeral 23 in FIG. 3A denotes a metal portion that is a heat radiation fin of the semiconductor device 20.

  The semiconductor module 1 further includes a cooling device 30 connected to the first metal electrode plate 11 and the second metal electrode plate 12 so as to be disposed at a position facing the semiconductor device 20. The cooling device 30 radiates heat generated in the semiconductor device 20. Specifically, the cooling device 30 is connected to the first metal electrode plate 11 and the second metal electrode plate 12 via the insulating sheet 31 that electrically insulates the cooling device 30 from the first metal electrode plate 11 and the second metal electrode plate 12. It is fixed to the second metal electrode plate 12. FIG. 1A shows a state where the insulating sheet 31 and the cooling device 30 are not mounted.

  The insulating sheet 31 and the cooling device 30 are fixed to the first metal electrode plate 11 by fixing screws 41 and an insulating bush 43, and are fixed to the second metal electrode plate 12 by fixing screws 42 and the insulating bush 43. . The insulating bush 43 is disposed between the fixing screw 41 and the first metal electrode plate 11 so that the fixing screw 41 and the first metal electrode plate 11 do not directly contact each other. Similarly, an insulating bush 43 is disposed between the fixing screw 42 and the second metal electrode plate 12. For example, as shown in FIG. 1B, the tube-shaped insulating bush 43 covers the lower surface of the head of the fixing screws 41 and 42 and the shaft so that the fixing screw 41 and the first metal electrode plate 11 are connected. The fixing screw 42 and the second metal electrode plate 12 are electrically insulated from each other.

  Examples of the electric circuit of the semiconductor module 1 shown in FIG. 1A when the semiconductor device 20 is a diode are shown in FIGS. 4A and 4B. Here, it is assumed that the first main electrode 21 is an anode electrode and the second main electrode 22 is a cathode electrode. However, as already described, the semiconductor module 1 may have a configuration in which a diode and an anode electrode are connected in common. An example of the electric circuit in that case is shown in FIG.

  A portion surrounded by a broken line in FIGS. 4A, 4 </ b> B, and 5 is the semiconductor module 1. In the example shown in FIGS. 4A, 4B, and 5, the semiconductor module 1 rectifies the output of the secondary side coil 52 of the transformer 50 having the primary side coil 51 and the secondary side coil 52. Circuit.

  For the first metal electrode plate 11 and the second metal electrode plate 12, a material having higher thermal conductivity than a general printed circuit board, for example, a copper (Cu) plate or an aluminum (Al) plate can be adopted. . Thereby, the heat generated in the semiconductor device 20 can be radiated efficiently.

  On the surface of the first electrode surface 110 of the first metal electrode plate 11, the convex portion 100 is disposed around the connection portion with the first main electrode 21. Similarly, the convex part 100 is arrange | positioned around the connection part with the 2nd main electrode 22 of the semiconductor device 20 in the surface of the 2nd electrode surface 120 of a 2nd metal electrode plate. That is, the convex portion 100 is formed around the semiconductor device 20. Details of the protrusion 100 will be described later.

  A manufacturing method of the semiconductor module 1 according to the embodiment of the present invention will be described with reference to FIGS. 6A, 6B to 8A, and 8B. In addition, the manufacturing method of the semiconductor module 1 described below is an example, and it is needless to say that it can be realized by various other manufacturing methods including this modification.

  As shown in FIGS. 6A and 6B, a metal plate 10 having a first electrode surface 110 and a second electrode surface 120 arranged on the same plane level with a slit 130 interposed therebetween is prepared. As shown in FIG. 6, the first electrode surface 110 and the second electrode surface 120 are partially connected by a connection region 140 that is bridged by the slit 130. The connection region 140 is disposed at both ends of the slit 130. The screw through holes 410 and 420 are screw through holes to which the fixing screws 41 and 42 are respectively attached. The screw through holes 410 and 420 are large enough to receive the insulating bush 43 that covers the fixing screws 41 and 42.

  As shown in FIGS. 7A and 7B, the semiconductor device 20 having the first main electrode 21 and the second main electrode 22 is mounted on the metal plate 10. Specifically, the end of the lead extending from the first main electrode 21 disposed at one end of the semiconductor device 20 is on the first electrode surface 110 and the bottom of the other end of the semiconductor device 20 is on the bottom. The arranged second main electrode 22 is connected to the second electrode surface 120 by solder reflow. Depending on the shape of the semiconductor device 20, the form of the connection location between the first main electrode 21 and the first electrode surface 110 and the connection location between the second main electrode 22 and the second electrode surface 120. The form of is different.

  Next, as shown in FIGS. 8A and 8B, the cooling device 30 is attached to the metal plate 10. Specifically, an insulating sheet 31 that electrically insulates the metal plate 10 and the cooling device 30 is disposed between the metal plate 10 and the cooling device 30. Then, a fixing screw 41 that penetrates the metal plate 10 through the first electrode surface 110 through the insulating bush 43 and a fixing screw 42 that penetrates the metal plate 10 through the second electrode surface 120 through the insulating bush 43. Thus, the insulating sheet 31 and the cooling device 30 are fixed to the metal plate 10. The cooling device 30 has a function of cooling the semiconductor device, for example, a cooling fin or a water cooling device.

  Thereafter, the connection region 140 is cut to separate the first electrode surface 110 and the second electrode surface 120. By cutting the connection region 140, the metal plate 10 is separated into the first metal electrode plate 11 having the first electrode surface 110 and the second metal electrode plate 12 having the second electrode surface 120. The Thereby, the semiconductor module 1 shown in FIG. 1A is completed.

  Note that when the connection region 140 is cut, the portion connected to the first electrode surface 110 of the connection region 140 is the first protrusion 111 whose tip is directed to the second metal electrode plate 12, The metal electrode plate 11 remains in a region facing the second metal electrode plate 12. Similarly, the portion connected to the second electrode surface 120 of the coupling region 140 is the second protrusion 121 whose tip is directed to the first metal electrode plate 11, and the first metal electrode plate 12 has the first projection. It remains in a region facing the metal electrode plate 11.

  In the above example, the shape of the connection region 140 is U-shaped, and the connection region 140 is connected to the first electrode surface 110 and the second electrode surface 120 at a connection point close to the bottom surface corresponding to the U-shaped opening. ing. For this reason, the connection area | region 140 can be easily removed from the metal plate 10 by applying force from the outside and bending the connection area | region 140 by using a connection location as a fulcrum.

  In addition, the shape of the connection area | region 140 is not restricted to a U-shape, What kind of shape may be sufficient. For example, as shown in FIG. 9, the shape of the connection region 140 may be rectangular. However, in order to bend the connection region 140 by using the connection portion as a fulcrum and to cut the connection portion, the connection portion between the first electrode surface 110 and the second electrode surface 120 and the connection region 140 is connected to the connection region 140. It is preferable that the second electrode surface 120 is disposed at an end portion close to the second electrode surface 120.

  In addition, when the connection region 140 is not removed from the metal plate 10 by bending the connection region 140 by an external force, for example, when the connection region 140 is cut by a cutting tool such as a nipper, as shown in FIG. You may form the thin connection area | region 140 without the area | region which applies external force.

  As described above, in the method for manufacturing the semiconductor module 1, the connecting region 140 that connects the first electrode surface 110 and the second electrode surface 120 can be easily removed. Then, by removing the connection region 140 from the metal plate 10, the first main electrode 21 and the second main electrode 22 of the semiconductor device 20 are electrically separated. Thereby, the function of the semiconductor device 20 becomes effective.

  For example, as shown in FIG. 9, the upper surface of the connection region 140 may be at the same plane level as the first electrode surface 110 and the second electrode surface 120. However, it is preferable that the upper surface of the connection region 140 is at a different plane level from the first electrode surface 110 and the second electrode surface 120. For example, as illustrated in FIGS. 6B to 8B, the metal plate 10 is formed so that the upper surface of the connection region 140 is above the first electrode surface 110 and the second electrode surface 120. . Specifically, the connection portion between the connection region 140 and the first electrode surface 110 and the second electrode surface 120 is bent, and the upper surface of the connection region 140 is more than the first electrode surface 110 and the second electrode surface 120. Position it high. As a result, it becomes easy to apply an external force to cut the connection region 140. Further, it becomes easy to insert a cutting tool such as a nipper into the connection region 140, and there is no possibility that the cutting tool contacts the cooling device 30 and is damaged.

  Note that the upper surface of the connection region 140 may be lower than the first electrode surface 110 and the second electrode surface 120. In this case, when removing the connection region 140 from the metal plate 10, care must be taken not to damage the cooling device 30 disposed below the metal plate 10.

  As described above, by bending the connection portion of the connection region 140 with the first electrode surface 110 and the second electrode surface 120, the bent portion becomes a buffer when the connection region 140 is removed, and the connection portion 140 is moved to the semiconductor device 20 or the solder fixing portion. Can relieve stress.

  Note that when the upper surface of the connection region 140 is set to a level different from that of the first electrode surface 110 and the second electrode surface 120, the tips of the first protrusion 111 and the second protrusion 121 correspond to the first electrode surface 110. The second electrode surface 120 is located on a different plane. For example, when the upper surface of the connection region 140 is set higher than the first electrode surface 110 and the second electrode surface 120, the tips of the first protrusion 111 and the second protrusion 121 are connected to the first electrode surface 110 and the second electrode surface 120. It is located above the second electrode surface 120.

  Further, as shown in FIG. 2, on the surface of the first electrode surface 110 of the metal plate 10, a convex portion 100 is formed around a connection portion with a lead extending from the first main electrode 21. Similarly, a convex portion 100 is formed around the connection portion with the second main electrode 22 on the surface of the second electrode surface 120 of the metal plate 10. The protrusion 100 prevents the semiconductor device 20 from being displaced from a predetermined position on the metal plate 10 in the solder reflow process for fixing the semiconductor device 20 to the metal plate 10 as follows.

  Before starting the solder reflow process, the first main electrode 21 and the second main electrode 22 of the semiconductor device 20 are arranged in a region where the solder paste on the metal plate 10 is applied in advance. However, there is a possibility that the positions of the first main electrode 21 and the second main electrode 22 may be shifted due to vibration caused by moving the metal plate 10 in the solder reflow apparatus. However, the protrusion 100 serves as a stopper to prevent the semiconductor device 20 from moving. For this reason, it can prevent that the 1st main electrode 21 and the 2nd main electrode 22 shift | deviate from the position where the solder paste on the metal plate 10 was apply | coated.

  The convex portion 100 is formed by performing a process called “half punch press” on the metal plate 10. Specifically, pressing is performed to apply an external force F to a predetermined position from the back surface of the first electrode surface 110 and the second electrode surface 120 toward the first electrode surface 110 and the second electrode surface 120. Thereby, as illustrated in FIG. 11, the convex portion 100 having a height of about half the thickness d of the metal plate 10 is formed. In addition, the shape of the convex part 100 can employ | adopt various shapes, such as a rectangle, a mountain shape, and a circle.

  Moreover, since the convex part 100 is formed in the 1st electrode surface 110 and the 2nd electrode surface 120, the intensity | strength with respect to bending of the metal plate 10 increases by performing said half punching press.

  As described above, according to the method for manufacturing the semiconductor module 1 according to the embodiment of the present invention, soldering for connecting each electrode of the semiconductor device 20 to the metal plate 10 can be performed by solder reflow. For this reason, the increase in a manufacturing process can be suppressed. Further, since an insulating resin mold having a complicated shape or an elastic body is not required, an increase in material cost can be suppressed. Further, by forming the convex portion 100 on the first electrode surface 110 and the second electrode surface 120 by half punching press, the misalignment of the semiconductor device 20 in the solder reflow process is prevented.

  After the solder reflow process for fixing the semiconductor device 20 to the metal plate 10, the semiconductor module 1 is in a state in which the semiconductor device 20 is soldered on one metal plate 10, and the semiconductor module 1 is combined into one component. Can be treated as Since the semiconductor module 1 can be transported in a state where the metal plate 10 and the semiconductor device 20 are integrated, or other parts and circuits can be attached, the semiconductor module 1 can be handled easily and accurately. For this reason, the reliability of the semiconductor module 1 is also improved.

  For example, by simply sandwiching the insulating sheet 31 between the metal plate 10, the metal plate 10 can be easily distorted in the cooling device 30 such as a heat radiating fin or a water cooling device, and the position (interval) of the mounting portion of the semiconductor device 20 is distorted. And can be stably fixed.

  In addition, by adopting a material having higher thermal conductivity than the printed board for the metal plate 10, even when a large current flows through the semiconductor device 20, heat generated in the semiconductor device 20 can be efficiently radiated. Therefore, the semiconductor device 20 in which a large current flows can be operated in a small space without increasing the size of the semiconductor module 1.

<Modification>
FIG. 12, FIG. 13 (a), and FIG. 13 (b) show a modification of the semiconductor module 1 according to a modification of the embodiment of the present invention. The semiconductor module 1 illustrated in FIG. 12 is an example further including a printed circuit board 60 on which a device (not shown) that is electrically connected to the semiconductor device 20 is mounted. In FIG. 12, the first and second metal electrode plates 11 and 12, the semiconductor device 20, the insulating sheet 31, the cooling device 30, and the like that are transmitted through the printed board 60 and disposed below the printed board 60 are displayed. Has been. The portion displayed through the printed circuit board 60 is indicated by a broken line.

  For example, the fixing screw 41 for connecting the first metal electrode plate 11 to the cooling device 30 and the fixing screw 42 for connecting the second metal electrode plate 12 to the cooling device 30 are electrically connected to the semiconductor device 20. The printed circuit board and the bus bar on which the device to be mounted is mounted can be fastened together.

  In the example shown in FIGS. 12, 13 (a), and 13 (b), the printed circuit board 60 is disposed above the semiconductor device 20 so as to face the cooling device 30. That is, the printed circuit board 60 and the semiconductor module 1 have a laminated structure. The conductive joint 81 fixed in contact with the first electrode surface 110 by the fixing screw 41 is connected to the first main electrode 21 of the semiconductor device 20 and the wiring pattern on the printed circuit board 60. The screw 71 is electrically connected. Further, the conductive joint 82 fixed in contact with the second electrode surface 120 by the fixing screw 42 is connected to the second main electrode 22 of the semiconductor device 20 and the wiring pattern on the printed circuit board 60. The screw 72 is electrically connected.

  As a result, the semiconductor device 20 and the device mounted on the printed circuit board 60 are electrically connected via the joints 81 and 82 and the fixing screws 71 and 72. Thus, a desired electric circuit can be configured by the semiconductor device 20 and the device mounted on the printed circuit board 60.

  In order to manufacture the semiconductor module 1 shown in FIG. 12, first, the semiconductor device 20 is mounted on the metal plate 10 in the same manner as described with reference to FIGS.

  Next, the semiconductor module 1 is mounted on the cooling device 30 via the insulating sheet 31. At this time, the device mounted on the printed circuit board 60 and the semiconductor device 20 can be electrically connected to form a desired circuit. As described above, the joints 81 and 82 are attached by the fixing screws 41 and 42 through the insulating bush 43. Next, the printed circuit board 60 is mounted with the fixing screws 71 and 72 so as to form a laminated structure with the semiconductor module 1. Note that after the semiconductor module 1 is mounted on the cooling device 30, the connection region 140 is cut to separate the first electrode surface 110 and the second electrode surface 120. Further, the connection region 140 may be separated after the printed circuit board 60 is mounted on the semiconductor module 1.

  According to the semiconductor module 1 according to the modification of the embodiment of the present invention, the semiconductor module 1 in which the semiconductor device 20 and other circuits are integrated can be realized at a low cost with strong electrical connection. Further, since the semiconductor module 1 has a configuration in which the semiconductor device 20 is mounted on the metal plate 10, the semiconductor module 1 can be thinned. For this reason, the first and second metal electrode plates 11 and 12 on which the semiconductor device 20 is mounted can be disposed under the printed circuit board 60, and space saving can be realized.

(Other embodiments)
As mentioned above, although this invention was described by embodiment, it should not be understood that the description and drawing which form a part of this indication limit this invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  In the description of the embodiment already described, an example in which the semiconductor module 1 includes two first metal electrode plates 11 and one second metal electrode plate 12 has been described. FIG. 14A and FIG. As shown in (b), the semiconductor module 1 may be configured to have one first metal electrode plate 11 and one second metal electrode plate 12. FIG. 14A and FIG. 14B show a state before the connection region 140 is cut off. FIG. 15 shows an example of an electric circuit of the semiconductor module 1 shown in FIGS. 14A and 14B when the semiconductor device 20 is a diode.

  As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor module 10 ... Metal plate 11 ... 1st metal electrode plate 12 ... 2nd metal electrode plate 20 ... Semiconductor device 21 ... 1st main electrode 22 ... 2nd main electrode 30 ... Cooling device 31 ... Insulating sheet DESCRIPTION OF SYMBOLS 41, 42 ... Fixing screw 43 ... Insulating bush 60 ... Printed circuit board 71, 72 ... Fixing screw 81, 82 ... Joint 100 ... Convex part 110 ... 1st electrode surface 111 ... 1st protrusion 120 ... 2nd electrode Surface 121 ... second protrusion 130 ... slit 140 ... connection region

Claims (10)

The first electrode surface and the second electrode surface are disposed on the same plane level across the slit, and the first electrode surface and the second electrode surface are partially bridged by the connection region bridged by the slit. Preparing the joined metal plates;
The first main electrode is electrically connected to the first electrode surface, the second main electrode is electrically connected to the second electrode surface by solder reflow, and the first and second main electrodes are provided. Mounting a semiconductor device on the metal plate;
Cutting the connection region to separate the first electrode surface and the second electrode surface. A method of manufacturing a semiconductor module, comprising:   The method of manufacturing a semiconductor module according to claim 1, further comprising a step of attaching a cooling device for cooling the semiconductor device to the metal plate before the step of cutting the connection region.   3. The method of manufacturing a semiconductor module according to claim 1, wherein an upper surface of the connection region is at a level different from that of the first and second electrode surfaces.   Protrusions are formed on the first electrode surface around the connection portion with the first main electrode and on the second electrode surface around the connection portion with the second main electrode, respectively. 4. The method of manufacturing a semiconductor module according to claim 1, wherein   Before the step of cutting the connection region, the method further includes a step of mounting a substrate on which another device electrically connected to the semiconductor device is mounted on the metal plate so as to form a laminated structure with the metal plate. The method for manufacturing a semiconductor module according to claim 1, wherein: A first metal electrode plate having a first electrode surface;
A second metal electrode plate having a second electrode surface disposed on the same plane level as the first electrode surface;
A semiconductor device having a first main electrode connected to the first electrode surface and a second main electrode connected to the second electrode surface, wherein the first metal electrode plate is the first metal electrode plate. A first protrusion directed from the region facing the second metal electrode plate toward the second metal electrode plate, and the second metal electrode plate from the region facing the first metal electrode plate A semiconductor module comprising a second protrusion directed toward the metal electrode plate.   The semiconductor module according to claim 6, further comprising a cooling device connected to the first metal electrode plate and the second metal electrode plate.   Convex portions are arranged around the connection portion with the first main electrode on the surface of the first electrode surface, and around the connection portion with the second main electrode on the surface of the second electrode surface. The semiconductor module according to claim 6, wherein a convex portion is arranged.   9. The semiconductor module according to claim 6, wherein tips of the first and second protrusions are located on a different plane from the first and second electrode surfaces. 10.   And further comprising a substrate on which another device electrically connected to the semiconductor device via a fixing screw for fixing the semiconductor device to the first and second metal electrode plates is mounted. 10. The semiconductor module according to claim 6, wherein the substrate is mounted on the first and second metal electrode plates so as to form a laminated structure with the metal electrode plates.

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