JP2012019231A - Crystallization method and apparatus for amorphous film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent occurrence of unevenness caused by projections formed by sequential lateral crystallization.SOLUTION: An incomplete melting energy regions in which film is not melt by a laser beam are juxtaposed with one another in an amplitude direction in a corrugated shape so as to be spaced from another, and the gaps between the incomplete melting energy regions are set to melting energy regions in which film is melt by the laser beam. The laser beam is applied to the film to perform sequential lateral crystallization on the melt portion of the film from a solid-phase portion. Furthermore, the film is positionally changed so that the solid-phase portion becomes a melt portion, the gaps between the incomplete melting energy regions are set to the melting energy regions, and the film is irradiated with the laser beam to perform sequential lateral crystallization. A silicon film 10 is irradiated and crystallized with a laser pattern having incomplete melting energy regions and the melting energy regions.

Description

  The present invention relates to a crystallization method and apparatus for sequentially crystallizing the amorphous film by side crystallization in order to improve the film quality of an amorphous silicon film or the like which is a semiconductor thin film.

  As a semiconductor thin film used for a flat panel display substrate or the like, a semiconductor thin film using an amorphous film or a crystalline thin film is known. With respect to this crystalline thin film, a method of manufacturing an amorphous film by annealing and crystallizing has been proposed. In addition, Patent Document 1 and Patent Document 2 propose SLS (Sequential Lateral Solidification) technology for producing huge single crystal silicon by inducing lateral growth of silicon crystals using an energy source as a laser. Has been.

The SLS technology is based on the phenomenon that silicon grains grow in a direction perpendicular to the boundary surface between liquid silicon and solid phase silicon. By appropriately adjusting the intensity of the laser energy and the movement of the scanning range of the laser beam, the silicon grain is laterally grown to a predetermined length to crystallize the amorphous silicon thin film.
Furthermore, in the conventional apparatus, it is proposed in Patent Document 3 to provide a method with improved production efficiency when sequentially using a lateral crystallization (SLS) method to crystallize silicon.

  In the prior art, as shown in FIG. 7A, the optical member 114 is alternately arranged so that the transmission region 114a and the blocking region 114b are long slits (length W) in the lateral direction. At this time, the vertical length d of the transmission region 114a is configured to have a length that is twice or less than the maximum length of the grains that grow on the side surface. When the amorphous film is irradiated with laser light through the optical member 114, a melted region is formed in a thin band shape with the amorphous film according to the transmission region 114 a, and side surface growth occurs from the amorphous solid phase at both side interfaces, resulting in crystallization. At this time, as shown in FIG. 7B, the boundary between the grains 116a and 116b grown from the side surfaces on both sides grows until they collide with each other in the middle of the liquid phase, and a linear protrusion 116c is formed in this portion. . Next, as shown in FIG. 7B, in the second shot, the optical member 114 is moved so that the amorphous solid phase portion 117 is irradiated with the laser light transmitted through the transmission region 114a. The region including the solid phase portion is melted. Then, side surface growth occurs from the solid phase crystallized at both side interfaces, and the amorphous solid phase portion is crystallized. Also at this time, linear protrusions are formed in the middle of the liquid phase. The amorphous film is crystallized by performing the above process over the entire film surface while changing the position.

In Patent Document 3, in order to improve the efficiency of the above process, as shown in FIG. 8, two blocks 130 and 131 having transmission regions 130a and 131a and blocking regions 130b and 131b are provided side by side on the optical member. An activation region 132 in which a large number of small rectangular slits 132a are formed in the blocks is provided.
In this method, a step of preparing a substrate on which an amorphous silicon thin film is formed; a first energy region (two blocks) and a second energy region (activation) on the substrate on which the amorphous silicon thin film is formed; A mask having a region); irradiating a laser beam on the first region of the substrate on which the amorphous silicon thin film is formed through an optical member having a first energy region and a second energy region, Crystallization of one region with a laser beam irradiated through the first energy region of the optical member; and activation (annealing) of the first frame region of the crystallized substrate with the laser beam irradiated through the second energy region. Includes steps to do.

International Publication No. 97/45827 Pamphlet Korean Patent Application Publication No. 2001-004129 JP 2005-5722 A

  In any of the conventional crystal growth methods, a laser beam is formed into a plurality of lines and irradiated to an irradiation object on which a silicon thin film is deposited to melt the silicon thin film. For this reason, protrusions generated when silicon changes from a liquid to a solid form in a linear shape and are formed at regular intervals. However, there may be a partial shift in the position of the projection due to a difference in energy in the beam or a shift in the focal position, and this shift causes unevenness. This unevenness appears as a defect when the crystallized thin film is used for a display. In addition, the stage is moved when laser irradiation is performed, but the stage swings at the same time cause the same and causes unevenness.

  The present invention has been made to solve the above-described problems of the prior art. By arbitrarily varying the crystal growth, unevenness does not occur even when partial misalignment occurs. An object of the present invention is to provide a crystallization method and a crystallization apparatus that can be configured as described above.

  That is, among the crystallization methods of the amorphous film, the first aspect of the present invention is an incomplete method in which the amorphous film is not melted by the laser light in the crystallization method in which the amorphous film is irradiated with laser light and sequentially crystallized by side surface crystallization. The melt energy regions are arranged in parallel in the waveform with an interval in the amplitude direction, the non-complete melt energy regions are made into a melt energy region where the film is melted by laser light, and the film is irradiated with the laser light, The melted portions are sequentially crystallized from the side of the solid phase portion, the position is changed so that the solid phase portion becomes the melted portion, and the non-complete melting energy regions are arranged in parallel with an interval in the amplitude direction in the waveform. The complete melting energy region is set as a melting energy region, and the film is irradiated with the laser beam to sequentially crystallize the side surfaces.

  According to the present invention, side crystallization proceeds sequentially according to the wave shape from the solid phase formed according to the shape of the incomplete melting energy region, so that the positions of the resulting protrusions vary. The occurrence of unevenness due to the misalignment of the protrusions caused by the apparatus and external influence is suppressed.

  The amorphous film crystallization method according to the second aspect of the present invention is characterized in that, in the first aspect of the present invention, the incomplete melting energy region has a waveform having a constant period.

  The amorphous film crystallization method of the third aspect of the present invention is the method according to the second aspect of the present invention, wherein the incomplete melting energy region in the post-irradiation of the laser light and the incomplete melting energy region in the pre-irradiation of the laser light. Are positioned so as to deviate in the amplitude direction and the wave length direction.

  According to the present invention, the side surface crystallization is sequentially performed by shifting the position of the solid phase of the waveform by the previous laser beam irradiation and the position of the solid phase of the waveform by the subsequent laser beam irradiation. The occurrence of unevenness due to the misalignment of the protrusions caused by the apparatus and external influences is suppressed.

  The amorphous film crystallization method according to a fourth aspect of the present invention is the method according to the third aspect, wherein the non-complete melting energy region in the post-irradiation of the laser light is the non-complete melting energy region in the pre-irradiation of the laser light. It is located in the center of the gap, and is positioned so as to be shifted by a half cycle in the wave length direction with respect to the incomplete melting energy region in the prior irradiation of the laser beam.

  According to the present invention, the side surface crystallization can be sequentially performed by appropriately shifting the position of the solid phase of the waveform by the previous laser beam irradiation and the position of the solid phase of the waveform by the subsequent laser beam irradiation. Is effectively dispersed to suppress the occurrence of unevenness due to the misalignment of the protrusions caused by the apparatus and external influences.

  The amorphous film crystallization method according to a fifth aspect of the present invention is characterized in that, in any of the second to fourth aspects of the present invention, the incomplete melting energy region has a triangular or sinusoidal waveform. And

  According to the present invention, in accordance with the incomplete melting energy region of the waveform, the side surface crystallization sequentially proceeds in a predetermined direction in different directions, and the side surface crystallization can be performed substantially evenly. It becomes possible.

  In the crystallization method for an amorphous film according to a sixth aspect of the present invention, in any one of the second to fifth aspects of the present invention, the period of the waveform is an integral multiple of an arrangement interval of thin film transistors arranged in the crystallized film. It is characterized by being.

  According to the present invention, since the projection formation position is determined depending on the period of the incomplete melting energy region, the arrangement position of the thin film transistor is designed so that the projection is located in a place where there is no trouble such as a gap between the thin film transistors. It can be carried out.

  The amorphous film crystallization method according to a seventh aspect of the present invention is the method according to any one of the second to sixth aspects, wherein the period of the waveform is an integer of a pixel interval of a flat panel display using the crystallized film as a substrate. It is characterized by being double.

  According to the present invention, since the projection formation position is determined depending on the period of the incomplete melting energy region, the arrangement position of the thin film transistor is designed so that the projection is located at a place where the pixel of the flat panel display is not hindered. It can be carried out.

  An amorphous film crystallization method according to an eighth aspect of the present invention is the method according to any one of the first to seventh aspects, wherein the amorphous film is crystallized with a laser pattern having the incomplete melting energy region and the melting energy region. It is characterized by becoming.

According to the present invention, in accordance with the image of the incomplete melting energy region and the melting energy region defined above, the amorphous film is irradiated with the laser beam by providing the incomplete melting energy region and the melting energy region. Then, the side crystallization can be efficiently performed sequentially.
In addition, the said laser pattern can be obtained by shaping | molding by the optical member which has a laser beam shielding or a laser beam low transmission part, and a laser beam transmission part, or an optical system (diffractive grating etc.). However, in the present invention, the means for obtaining the laser pattern is not limited to these.

  According to the present invention, a non-complete melting energy region and a melting energy region can be given to the film in a predetermined arrangement shape by the laser pattern having the laser light shielding or low transmission part and the laser light transmission part. In order to make the position of the incomplete melting energy region different between the previous laser light irradiation and the subsequent laser light irradiation, the laser light is shaped into different shapes by the previous laser light irradiation and the subsequent laser light irradiation. Alternatively, the shaped laser beam may be moved relatively by the amount of the different positions when the laser beam is irradiated. Further, for example, the laser light shielding or laser low transmission part and the laser light transmission part are provided so that the laser light shielding or laser low transmission part and the laser light transmission part are arranged in the horizontal direction by shifting the positions for the previous irradiation and the subsequent irradiation. The laser beam may be irradiated by moving relatively in the horizontal direction between irradiation and subsequent irradiation.

  An amorphous film crystallization apparatus according to a ninth aspect of the present invention includes: a laser light source that outputs a laser beam that irradiates an amorphous film; and an optical system that guides the laser beam to the film. The amorphous pattern is a laser pattern in which non-complete melting energy regions that do not melt are formed in a waveform and are arranged in parallel with an interval in the amplitude direction, and the non-complete melting energy regions are formed into a waveform melting energy region in which the film is melted by laser light. The film can be crystallized.

According to the present invention described above, the above-described crystallization method of the present invention can be executed reliably and efficiently.
In the laser pattern, as described above, the crystallization apparatus is provided with an optical member having a laser light shielding or laser light low transmission part and a laser light transmission part, or a molding means such as an optical system (diffraction grating or the like). Can be obtained.

  An amorphous film crystallization apparatus according to a tenth aspect of the present invention is characterized in that, in the ninth aspect of the present invention, the apparatus includes a scanning device that relatively scans the amorphous film and the laser beam.

  According to the present invention, it is possible to perform crystallization treatment over the entire film by relative movement of the forming means and movement of the film.

  That is, according to the method for crystallizing an amorphous film of the present invention, incomplete melting energy regions in which the film is not melted by the laser beam are arranged in parallel in the waveform with an interval in the amplitude direction, and the laser beam is interposed between the incomplete melting energy regions. The film is melted in a melting energy region by irradiating the film with the laser beam so that the melted portion of the film is sequentially crystallized from the solid phase portion, and further, the solid phase portion becomes the melted portion. The incomplete melting energy regions are arranged in parallel in the waveform with an interval in the amplitude direction, the incomplete melting energy regions are made into the melting energy regions, and the laser beam is irradiated onto the film in order to change the position to Therefore, it is possible to randomly control the interval between the projections that occur during the growth of the corrugated crystal, and unevenness due to the deviation of the projections due to the influence of the device performance and disturbance There is raw and not effect.

It is a figure which shows expansion of the crystallization apparatus of the reference form of this invention and an optical member, and a figure which shows the plane and partial expansion of the optical member of a modification. Similarly, it is a figure which shows the change of the silicon film at the time of previous laser beam irradiation. Similarly, it is a figure which shows the change of the silicon film at the time of subsequent laser beam irradiation. It is a figure which shows the change of the silicon film at the time of laser irradiation with the optical member in one Embodiment of this invention. Similarly, it is a figure which shows the change of the silicon film at the time of subsequent laser beam irradiation. It is a figure which shows the optical member in other embodiment of this invention. It is a figure which shows the process at the time of the optical member used for the conventional sequential side surface crystallization, and the subsequent laser beam irradiation. It is a figure which shows the optical member used for sequential side surface crystallization of another prior art example.

(Reference form 1)
Hereinafter, one reference embodiment of the present invention will be described.
FIG. 1A shows a crystallization apparatus, a stage 2 on which a substrate 1 on which a silicon film 10 is formed is placed, a moving apparatus 3 that can move the stage in the XYZ axial directions, and a predetermined unit. And a laser light source 4 that outputs a laser beam 4a having a wavelength. The silicon film 10 is in an amorphous state before processing. As the laser light source, for example, a laser oscillator LS2000 (1) or LSX315 (wavelength 308 nm, repetitive oscillation number 300 Hz) manufactured by Coherent can be used. However, the laser light source 4 is not limited to a specific one in the present invention.
Laser light 4 a oscillated by the laser light source 4 is guided through an optical system including a mirror 5 and an imaging lens 6, and is irradiated onto the silicon film 10 of the substrate 1. Further, an optical member 7 having a laser light shielding or laser light low transmission part and a laser light transmission part is arranged on the optical path of the laser light 4a (incident side of the imaging lens 6), and the laser light 4a is shaped. Then, it reaches the coupling lens 6 side. In addition, the relative position between the laser beam 4a and the silicon film 10 can be changed by moving the stage 2 by the moving device 3. Therefore, the moving device 3 corresponds to the scanning device of the present invention. In this embodiment, the silicon film is the target of processing, but the present invention processes the amorphous film into a crystal film, and the material is not limited to silicon.

  As shown in FIG. 1B, the optical member 7 is arranged in parallel so that a plurality of circular laser light shielding portions 7a are equally spaced in the row direction and the column direction, and are linearly aligned in the row direction and the column direction. The laser beam shielding portions 7a and 7a are laser beam transmitting portions 7b. Further, when the thin film transistors are arranged by crystallizing the amorphous film, the distance between the laser light shielding portions 7a and 7a is an integral multiple of the arrangement interval of the thin film transistors, and this is used for a flat panel display. It is set so as to be an integral multiple of the interval between pixels.

In addition, as an optical member, it is not necessarily required that the circular laser beam shielding portions are arranged in parallel so as to be positioned linearly in the row direction and the column direction.
FIG.1 (c) shows the example of a change of an optical member, and has shown the top view and partial enlarged view of the optical member 70 from which the arrangement position of circular laser beam shielding part 70a ... 70a differs in each line. The portion other than the laser light shielding portion 70a is a laser light transmitting portion 70b.
The laser light shielding units 70a are arranged at equal intervals in the row direction and the column direction (the intervals in the row direction and the column direction are different), respectively, and are arranged linearly in the row direction. The position is shifted every time. The amount of deviation is set to half the interval between the laser light shielding portions 70a and 70a. As a result, the laser light shielding portions 70a are arranged so that the positions in the column direction are aligned every other row. In this example, the interval between the adjacent laser light shielding portions 70a and 70a has the same distance A as the diameter A of the laser light shielding portion 70a as shown in FIG. Yes. By setting the interval, the laser beam irradiation can be performed so that the incomplete melting energy regions do not overlap with each other in the previous laser beam irradiation and the subsequent laser beam irradiation.
In the optical member 7 described above, the adjacent laser light shielding portions 7a are positioned at the corners of the rectangle. On the other hand, in the optical member 70, the adjacent laser light shielding portions 70a are positioned at the apex of the triangular shape. For this reason, in the optical member 7, when the crystal is solid-phase grown, it must grow to half of the diagonal line in the rectangle, and a portion that is relatively longer than the laser light shielding part 70a and is not crystallized tends to remain. Therefore, the interval between the laser light shielding portions 7a must be narrowed. On the other hand, in the optical member 70, when the crystal is solid-phase-grown, it is only necessary to grow up to the center of the triangle, and the distance is relatively short compared to the laser light shielding part 7a and the crystal is more easily crystallized. The interval between the portions 70 a can be made wider than that of the optical member 7. In addition, when located in a triangular shape, it is desirable to set the row interval so that the intervals between the laser light shielding portions 70a are the same on each side. As a result, the distance from each laser light shielding part 70a to the center of the triangle becomes the same, and crystallization by solid phase growth is made more uniform.
However, hereinafter, an apparatus using the optical member 7 will be described.

  Hereinafter, an operation when the substrate 1 is crystallized by irradiating the substrate 1 with laser light using the above-described apparatus including the optical member 7 will be described.

  A part of the silicon film 10 is irradiated with the laser beam 4 a output from the laser light source 4 through the optical member 7. Then, the laser beam 4a becomes an incomplete melting energy region on the silicon film 10 in the non-irradiation region corresponding to the laser beam shielding portion 7a, and melts on the silicon film 10 in the irradiation region corresponding to the laser beam transmitting portion 7b. It is formed into a laser pattern that becomes an energy region. As a result, as shown in FIG. 2A, the incomplete melting energy region becomes an amorphous solid phase 10a, and the melting energy region becomes a liquid phase 10b. After irradiation with the laser beam 4a, side surface crystallization occurs sequentially from the solid phase 10a to the liquid phase 10b at the solid-liquid phase interface, and the liquid phase portion is crystallized. FIG. 2 (b) is a partially enlarged view of FIG. 2 (a) and shows the grain bounds 10c generated by the crystallization. Grain bounds 10c are formed radially around the solid phase 10a, and projections are likely to be formed in the quadrangular shape and the corners that are continuous with the tips of the grain bounds 10c.

  Thereafter, by moving the optical member 7 or the stage 2, a non-irradiation area corresponding to the laser light shielding portion 7a is positioned in the same row between the solid phases 10a and 10a. Further, as shown in FIG. 2C, the optical member 7 has a laser light shielding portion 7a and a laser light transmitting portion 7b arranged in the horizontal direction for pre-irradiation and post-irradiation, respectively. By moving, the non-irradiation area corresponding to the laser light shielding part 7a may be positioned in the same row between the solid phases 10a and 10a.

When the laser beam is irradiated after the movement, the non-irradiation region corresponding to the laser light shielding portion 7a becomes a non-complete melting energy region on the silicon film 10 according to the laser pattern, and the irradiation region corresponding to the laser light transmitting portion 7b It becomes a melting energy region on the silicon film 10. As a result, the solid phase 10d is obtained in the incomplete melting energy region, and the liquid phase is obtained in the melting energy region. For this reason, the solid phase 10a in the previous irradiation also becomes a liquid phase. By irradiation with the laser beam 4a, side surface crystallization occurs sequentially from the solid phase 10d to the liquid phase at the solid-liquid phase interface, and the liquid phase portion is crystallized.
FIG. 3A shows the grain bounds 10e generated by the crystallization. Grain bounds 10e are formed radially around the solid phase 10d, and projections are likely to be formed at the quadrangular shape and the corners connected to the tips of the grain bounds 10e.
As a result of the crystallization, a crystallized silicon film 10 is obtained as shown in FIG.
In the crystallized silicon film 10, the protrusions do not line up as described above, and are randomly located in a small area, so that unevenness due to misalignment does not occur.

(Embodiment 1)
Next, an embodiment of the present invention having an optical member pattern having a laser light shielding or laser light low transmission part and a laser light transmission part will be described.
In this embodiment, as shown in FIG. 4A, the optical member 17 has a laser light shielding part 17a having a triangular wave shape with a predetermined width, and the other region is a laser light transmitting part 17b.

  Through the optical member 17, a laser beam 4 a output from the laser light source 4 is irradiated to a partial region of the silicon film 10. Then, the laser beam 4a becomes an incomplete melting energy region on the silicon film 10 in the non-irradiation region corresponding to the laser beam shielding portion 17a, and melts on the silicon film 10 in the region corresponding to the laser beam transmitting portion 17b. It is formed into a laser pattern that becomes an energy region. As a result, as shown in FIG. 4B, the incomplete melting energy region becomes a triangular wave-shaped amorphous solid phase 100a, and the melting energy region becomes a liquid phase. After irradiation with the laser beam 4a, side surface crystallization occurs sequentially from the solid phase 100a to the liquid phase at the solid-liquid phase interface, and the liquid phase portion is crystallized. FIG. 4B shows the grain bounds 100c generated by the crystallization. A wave-shaped protrusion 100d is formed between the solid phases 100a and 100a.

  Next, by moving the optical member 17 or the stage 2, as shown in FIG. 4A, a non-irradiation region having a waveform corresponding to the laser light shielding portion 17a is generated between the solid phases 100a and 100a. It is positioned so as to be shifted by a half cycle in the length direction. Further, the laser light shielding portion 17a and the laser light transmitting portion 17b are arranged in the horizontal direction on the optical member 17 for the pre-irradiation and the post-irradiation, respectively, and the optical member 17 or the stage 2 is moved, whereby the laser light shielding portion 17a. The non-irradiation region corresponding to may be positioned so as to be shifted by a half cycle in the wave length direction between the solid phases 100a and 100a.

  When the laser beam 4a is irradiated in the above state, a triangular wave solid phase remains corresponding to the non-irradiation region according to the laser pattern, and the other region through the optical member 17 becomes the liquid phase. For this reason, the solid phase 100a in the previous irradiation also becomes a liquid phase. By irradiation with the laser beam 4a, side surface crystallization occurs sequentially from the solid phase to the liquid phase at the solid-liquid phase interface, and the liquid phase portion is crystallized. FIG. 5 shows the crystallized film, and the film has protrusions 100e formed in a triangular wave shape together with the previous protrusions 100d by the crystallization. That is, the crystallization is completed such that the protrusion 100e generated by the subsequent laser light irradiation enters the center of the protrusion 100d generated by the previous laser light irradiation.

  In the above embodiment, a triangular wave shaped laser light shielding portion is provided on the optical member 17 in accordance with the incomplete melting energy region of the waveform. However, a sine wave shape may be used instead of the triangular wave shape. In FIG. 6, the optical member 27 is provided with a laser light shielding part 27a in a sine wave shape with a predetermined width, and the other part of the optical member 27 is a laser light transmitting part 27b. By irradiating the amorphous film with laser light through the optical member 27, side surface crystallization can be sequentially advanced with a sine wave solid phase as a base point. Thereafter, as shown in FIG. 6, the optical member 27 or the stage side is moved so that a non-irradiation region corresponding to the laser light shielding portion 27a is located between the solid phase portion and the solid phase portion, and the wave length By irradiating the laser beam so as to be shifted by a half cycle in the vertical direction (upside down in the figure), crystallization can be performed including the solid phase portion.

  Then, the crystallization is completed so that the projection generated by the subsequent laser beam irradiation enters the center of the projection generated by the previous laser beam irradiation.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Stage 3 Moving device 4 Laser light source 4a Laser light 5 Mirror 6 Imaging lens 7 Optical member 7a Laser light shielding part 7b Laser light transmitting part 10 Silicon film 17 Optical member 17a Laser light shielding part 17b Laser light transmitting part 27 Optical Member 27a Laser light shielding part 27b Laser light transmitting part 70 Optical member 70a Laser light shielding part 70b Laser light transmitting part

Claims (10)

In the crystallization method of irradiating the amorphous film with laser light and sequentially crystallizing by side crystallization,
Incomplete melting energy regions in which the film is not melted by laser light are arranged in parallel in a waveform with an interval in the amplitude direction, and the non-complete melting energy regions are made to be melting energy regions in which the film is melted by laser light, and the laser light Is irradiated to the film, the molten portion of the film is sequentially crystallized from the solid phase portion, and the position is changed so that the solid phase portion becomes the molten portion. A method for crystallizing an amorphous film, wherein the film is arranged side by side with a gap in the direction, and the incomplete melting energy region is made into a melting energy region, and the laser beam is irradiated to the film to sequentially perform side crystallization.   2. The method for crystallizing an amorphous film according to claim 1, wherein the incomplete melting energy region has a waveform having a constant period.   The incomplete melting energy region in the post-irradiation of the laser light and the incomplete melting energy region in the pre-irradiation of the laser light are positioned so as to be shifted in an amplitude direction and a wave length direction. The method for crystallizing an amorphous film according to claim 2.   The incomplete melting energy region in the post-irradiation of the laser light is located at the center between the incomplete melting energy regions in the pre-irradiation of the laser light, and is in the incomplete melting energy region in the pre-irradiation of the laser light. 4. The method for crystallizing an amorphous film according to claim 3, wherein the amorphous film is positioned so as to be shifted by a half cycle in the wave length direction.   5. The method for crystallizing an amorphous film according to claim 2, wherein the incomplete melting energy region has a waveform of a triangular wave or a sine wave.   6. The method for crystallizing an amorphous film according to claim 2, wherein the period of the waveform is an integral multiple of an arrangement interval of thin film transistors arranged in the crystallized film. 7. The method for crystallizing an amorphous film according to claim 2, wherein the period of the waveform is an integral multiple of a pixel interval of a flat panel display using a crystallized film as a substrate.   The method for crystallizing an amorphous film according to claim 1, wherein the amorphous film is crystallized with a laser pattern having the incomplete melting energy region and the melting energy region.   A laser light source that outputs a laser beam for irradiating the amorphous film; and an optical system that guides the laser beam to the film, and an incomplete melting energy region that does not melt the film by the laser beam has a waveform and an amplitude. It is possible to crystallize the amorphous film with a laser pattern that is arranged in parallel with a gap in the direction and has a wave-shaped melting energy region in which the film is melted by laser light between the incomplete melting energy regions. Crystallizing equipment.   The crystallization apparatus according to claim 9, further comprising a scanning device that relatively scans the amorphous film and the laser beam.

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