JP2012004145A - Mounting semiconductor element reworking method - Google Patents
Mounting semiconductor element reworking method Download PDFInfo
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- JP2012004145A JP2012004145A JP2010134676A JP2010134676A JP2012004145A JP 2012004145 A JP2012004145 A JP 2012004145A JP 2010134676 A JP2010134676 A JP 2010134676A JP 2010134676 A JP2010134676 A JP 2010134676A JP 2012004145 A JP2012004145 A JP 2012004145A
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- epoxy resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
Description
本発明は、酸無水硬化剤を使用したエポキシ樹脂でアンダーフィルされた実装半導体素子のリワーク方法に関し、詳しくは、実装基板上の特定の半導体素子をその周辺部並びに半導体素子に悪影響を及ぼすことなく取り外そうとする実装半導体素子のリワーク方法に係るものである。 The present invention relates to a method for reworking a mounting semiconductor element underfilled with an epoxy resin using an acid anhydride curing agent, and more specifically, without adversely affecting a specific semiconductor element on a mounting substrate and its peripheral portion and the semiconductor element. The present invention relates to a rework method of a mounted semiconductor element to be removed.
従来のこの種の実装半導体素子のリワーク方法は、半導体素子を封止（アンダーフィル）した樹脂を所定温度の熱風で一定時間加熱して半田バンプを溶融させると共に封止樹脂のせん断弾性率を変化させ、封止樹脂の引張強度が低下したところで半導体素子を取り外し、回路基板に残った樹脂を所定温度に保ったグリコールエーテル系の洗浄剤に浸漬させて除去するようになっている（例えば、特許文献１参照）。 The conventional rework method of this type of mounted semiconductor element is to heat the resin encapsulated (underfilled) the semiconductor element with hot air at a predetermined temperature for a certain time to melt the solder bumps and change the shear modulus of the encapsulating resin. When the tensile strength of the sealing resin is reduced, the semiconductor element is removed, and the resin remaining on the circuit board is removed by immersing it in a glycol ether-based cleaning agent maintained at a predetermined temperature (for example, patents). Reference 1).
また、他の実装半導体素子のリワーク方法は、基板の表面に搭載した半導体素子上面にヒータを内蔵した吸着治具を吸着させ、半導体素子を介して半田バンプを加熱し溶融させて半導体素子を基板から分離させ、その後７０℃程度に加熱したＮＭＰ（Ｎ−メチルー２−ピロリドン）の溶解剤で基板を洗浄して熱可塑性のエポキシ樹脂組成物の残渣を除去するようになっている（例えば、特許文献２参照）。 Another method for reworking a mounted semiconductor element is to adsorb an adsorption jig containing a heater on the upper surface of the semiconductor element mounted on the surface of the substrate, and heat and melt the solder bumps via the semiconductor element to place the semiconductor element on the substrate. The substrate is washed with a solubilizing agent of NMP (N-methyl-2-pyrrolidone) that is separated from the substrate and then heated to about 70 ° C. to remove the residue of the thermoplastic epoxy resin composition (for example, patents) Reference 2).
さらに他の実装半導体素子のリワーク方法は、半導体素子を、厚さを少し残した状態に切削加工によってプリント配線板から除去し、プリント配線板上の薄く残した半導体素子と封止樹脂と半田バンプとを加熱によって除去し、露出したフットプリントに、別の半導体チップを実装するようになっている（例えば、特許文献３参照）。 Still another method for reworking a mounted semiconductor element is to remove the semiconductor element from the printed wiring board by cutting while leaving a little thickness, and to leave the semiconductor element, sealing resin, and solder bumps left thin on the printed wiring board. Are removed by heating, and another semiconductor chip is mounted on the exposed footprint (see, for example, Patent Document 3).
しかし、このような従来の実装半導体素子のリワーク方法において、上記特許文献１に記載のリワーク方法は、半田バンプと封止樹脂とを２４０℃〜２６０℃の熱風で加熱して半田バンプを溶融させると共に封止樹脂のせん断弾性率を変化させるものであったので、特別の装置を必要としないという利点はあるものの、溶融した半田バンプが樹脂との接着状態で、膨張した封止樹脂に押されて封止樹脂から漏れ出し、周辺で再硬化して半導体素子の取り外しを困難にするという問題や、樹脂と接着されていることによる引き剥がし強度の上昇等の問題がある。この場合、半導体素子を無理矢理取り外そうとすると、再硬化した半田バンプや接着面の為に一緒に基板側やＩＣ側の電極パッドをも剥離させてしまうという問題が発生する。このような電極パッドが剥離した回路基板は、再利用することができないため破棄しなければならず、実装基板上の不良の半導体素子を良品に取り換えて回路基板又は半導体素子を活かそうとするリワークの本来の目的を達成することができない。また、特定の半導体素子のみに熱風を供給することは困難であるため、結果的に周辺の電子部品をも高温で加熱して熱ストレスを与え、性能劣化を招いてしまうという問題がある。 However, in such a conventional reworking method of a mounted semiconductor element, the reworking method described in Patent Document 1 is to melt the solder bump by heating the solder bump and the sealing resin with hot air of 240 ° C. to 260 ° C. At the same time, since the shear modulus of the sealing resin is changed, there is an advantage that a special device is not required, but the molten solder bump is pushed by the expanded sealing resin in an adhesive state with the resin. Thus, there are problems such as leakage from the sealing resin and re-curing in the vicinity to make it difficult to remove the semiconductor element, and problems such as an increase in peeling strength due to adhesion with the resin. In this case, if the semiconductor element is forcibly removed, there arises a problem that the electrode pads on the substrate side and the IC side are also peeled together due to the re-hardened solder bumps and the bonding surface. Such a circuit board from which the electrode pad has been peeled cannot be reused and must be discarded. Rework to replace the defective semiconductor element on the mounting board with a non-defective product and to make use of the circuit board or the semiconductor element. Cannot achieve its original purpose. In addition, since it is difficult to supply hot air only to a specific semiconductor element, there is a problem that as a result, peripheral electronic components are also heated at a high temperature to give thermal stress, resulting in performance degradation.
また、上記特許文献２に記載のリワーク方法は、特定の半導体素子のみを取除くことができると共に周辺の電子部品に悪影響を及ぼさないという利点があるものの、上記特許文献１と同様に溶融した半田バンプがエポキシ樹脂組成物から漏れ出して周辺部で再硬化し、半導体素子の取り外しを困難にするという問題や、基板並びにＩＣの電極パッドを剥離させるという問題がある。さらに、６０℃以上に加熱した熱可塑性樹脂の溶解剤は、基板表面に塗布された保護用エポキシ系レジストを侵してしまう問題があり、その結果基板の絶縁不良の元になる問題を引き起こすおそれがある。 Further, the rework method described in Patent Document 2 has the advantage that only a specific semiconductor element can be removed and does not adversely affect the surrounding electronic components. There is a problem that the bump leaks out from the epoxy resin composition and is re-cured at the peripheral portion, making it difficult to remove the semiconductor element, and a problem that the substrate and IC electrode pads are peeled off. Furthermore, the thermoplastic resin solubilizer heated to 60 ° C. or higher has a problem of eroding the protective epoxy resist applied to the substrate surface, and as a result, may cause a problem of poor insulation of the substrate. is there.
そして、上記特許文献３に記載のリワーク方法は、特定の半導体素子のみを取除くことができると共に周辺の電子部品に熱的な悪影響を極力及ぼさないという利点があるものの、振動の問題又は金属性の切削くずの問題がある。また半導体素子を切削して除去した後、プリント配線板上に薄く残した半導体素子と封止樹脂と半田バンプとを加熱によって除去しなければならず、作業工程が長くなるという問題もある。この場合、半導体素子の一部を残さずに半田バンプの高さ位置で切削することも考えられるが、基板に反りがあるときには、基板表面をも切削して基板を破損させてしまうという問題がある。さらに、上記特許文献３に記載のリワーク方法では、例えば実装半導体素子は不良品ではないが別の半導体素子に取り換えるようとするとき、半導体素子を破壊してしまうため取り外した半導体素子を再利用することができず、資源を無駄にするという問題がある。特に現在では、基板はもとより半導体素子自体のリワーク要求も多くなりこのリワーク方法は指示されていない。 The rework method described in Patent Document 3 has an advantage that only a specific semiconductor element can be removed and there is no thermal adverse effect on peripheral electronic components as much as possible. There is a problem of cutting scraps. In addition, after the semiconductor element is cut and removed, the semiconductor element, the sealing resin, and the solder bump that remain thin on the printed wiring board must be removed by heating, which increases the work process. In this case, it may be possible to cut at the height of the solder bump without leaving a part of the semiconductor element. However, when the substrate is warped, the substrate surface is also cut to damage the substrate. is there. Furthermore, in the rework method described in Patent Document 3, for example, when a mounted semiconductor element is not a defective product but is replaced with another semiconductor element, the semiconductor element is destroyed and reused. There is a problem that resources cannot be wasted. In particular, the demand for reworking not only the substrate but also the semiconductor element itself is increasing, and this reworking method is not instructed.
そこで、本発明は、このような問題点に対処し、実装基板上の特定の半導体素子をその周辺部並びに半導体素子に悪影響を及ぼすことなく取り外そうとする実装半導体素子のリワーク方法を提供することを目的とする。 Accordingly, the present invention provides a method for reworking a mounted semiconductor element that addresses such problems and attempts to remove a specific semiconductor element on the mounting substrate without adversely affecting the peripheral portion and the semiconductor element. For the purpose.
上記目的を達成するために、本発明による実装半導体素子のリワーク方法は、酸無水硬化剤を使用したエポキシ樹脂でアンダーフィルされた実装半導体素子のリワーク方法であって、実装基板上の特定の半導体素子の周囲に前記エポキシ樹脂の溶解剤を塗布し、常温で一定時間放置して前記エポキシ樹脂を軟化並びに接着力の低下による界面剥離をさせる第１ステップと、前記特定の半導体素子の上面を加熱して該半導体素子の端子部と前記実装基板の電極パッドとを接続する半田バンプを溶融させる第２ステップと、前記特定の半導体素子を取り外す第３ステップと、を実行するものである。 In order to achieve the above object, a mounting semiconductor device rework method according to the present invention is a reworking method of a mounting semiconductor device underfilled with an epoxy resin using an acid anhydride curing agent, which is a specific semiconductor on a mounting substrate. A first step of applying an epoxy resin solubilizing agent around the element and allowing it to stand at room temperature for a certain period of time to soften the epoxy resin and peel the interface due to a decrease in adhesive force; and heating the upper surface of the specific semiconductor element Then, a second step of melting a solder bump connecting the terminal portion of the semiconductor element and the electrode pad of the mounting substrate and a third step of removing the specific semiconductor element are executed.
このような構成により、実装基板上の特定の半導体素子の周囲に酸無水硬化剤を使用したエポキシ樹脂の溶解剤を塗布し、常温で一定時間放置してエポキシ樹脂を軟化並びに接着力の低下による界面剥離をさせ、上記特定の半導体素子の上面を加熱して該半導体素子の端子部と実装基板の電極パッドとを接続する半田バンプを溶融させ、その後上記特定の半導体素子を取り外す。 With such a configuration, an epoxy resin solubilizer using an acid anhydride curing agent is applied around a specific semiconductor element on a mounting substrate, and is allowed to stand at room temperature for a certain period of time to soften the epoxy resin and reduce adhesive strength. The interface is peeled off, and the upper surface of the specific semiconductor element is heated to melt the solder bump that connects the terminal portion of the semiconductor element and the electrode pad of the mounting substrate, and then the specific semiconductor element is removed.
また、前記第１ステップでは、前記特定の半導体素子の周囲に吸湿材を廻らせ、該吸湿材に前記溶解剤を浸み込ませて前記エポキシ樹脂に前記溶解剤を塗布する。これにより、特定の半導体素子の周囲のエポキシ樹脂に溶解剤を塗布する際に、半導体素子の周囲に吸湿材を廻らせた後、該吸湿材に上記溶解剤を浸み込ませる。 Further, in the first step, a hygroscopic material is wound around the specific semiconductor element, the solubilizer is immersed in the hygroscopic material, and the solubilizer is applied to the epoxy resin. As a result, when applying the dissolving agent to the epoxy resin around the specific semiconductor element, the hygroscopic material is turned around the semiconductor element, and then the above-described dissolving agent is immersed in the hygroscopic material.
さらに、前記第１ステップでは、前記溶解剤塗布後、常温で且つ一定圧力の不活性ガス雰囲気中に放置する。これにより、溶解剤塗布後に、常温状態でエポキシ樹脂と溶解剤とを十分に反応させられる。 Further, in the first step, after applying the dissolving agent, it is left in an inert gas atmosphere at a normal temperature and a constant pressure. Thereby, after application | coating of a solubilizer, an epoxy resin and a solubilizer can fully be made to react at normal temperature.
さらにまた、前記第１ステップでは、前記溶解剤反応後、恒温槽により一定温度で加熱した後、真空装置により前記溶解剤の脱液を行う。これにより、半導体素子周囲のエポキシ樹脂と溶解剤とを反応させた後、恒温槽で一定時間加熱し、さらに真空装置により溶解剤の脱液を行う。 Furthermore, in the first step, after the reaction of the dissolving agent, the solution is heated at a constant temperature in a thermostatic bath, and then the dissolving agent is removed by a vacuum apparatus. Thereby, after making the epoxy resin around the semiconductor element react with the dissolving agent, heating is performed for a certain period of time in a thermostatic bath, and the dissolving agent is removed by a vacuum apparatus.
そして、前記第２ステップでは、前記半田バンプの溶融温度よりも低い温度で前記実装基板を予熱する。これにより、半導体素子の上面を加熱して半田バンプを溶融する前に、実装基板を半田バンプの溶融温度よりも低い温度で予熱する。 In the second step, the mounting board is preheated at a temperature lower than the melting temperature of the solder bumps. Thus, before the upper surface of the semiconductor element is heated to melt the solder bump, the mounting substrate is preheated at a temperature lower than the melting temperature of the solder bump.
請求項１に係る発明によれば、実装基板上の特定の半導体素子を封止する酸無水硬化剤を使用したエポキシ樹脂のみを溶解すると共に上記特定の半導体素子のみを加熱すことができる。したがって、上記特定の半導体素子の周辺部の電子部品に熱ストレスを与えるおそれがない。また、常温にて上記エポキシ樹脂と溶解剤とを反応させているので、基板及び基板上に塗布された保護用エポキシ系レジスト並びに金属部を侵したりするおそれもない。それ故、実装基板上の特定の半導体素子をその周辺部に悪影響を及ぼすことなく取り外すことができる。 According to the first aspect of the invention, it is possible to dissolve only the epoxy resin using the acid anhydride curing agent that seals the specific semiconductor element on the mounting substrate and to heat only the specific semiconductor element. Therefore, there is no risk of applying heat stress to the electronic components around the specific semiconductor element. In addition, since the epoxy resin and the dissolving agent are reacted at room temperature, there is no risk of damaging the substrate, the protective epoxy resist applied on the substrate, and the metal part. Therefore, the specific semiconductor element on the mounting substrate can be removed without adversely affecting the peripheral portion.
また、請求項２に係る発明によれば、溶解剤を吸湿材に浸み込ませて一定時間保持することができ、吸湿材に塗布した溶解剤の乾燥を抑制することができ、また溶解剤量の確保も期待できる。したがって、エポキシ樹脂と溶解剤との反応を十分に進行させることができる。 Moreover, according to the invention which concerns on Claim 2, a solubilizer can be immersed in a hygroscopic material, it can hold | maintain for a fixed time, the drying of the solubilizer apply | coated to the hygroscopic material can be suppressed, and a solubilizer The amount can be expected to be secured. Therefore, the reaction between the epoxy resin and the dissolving agent can be sufficiently advanced.
さらに、請求項３に係る発明によれば、特定の半導体素子の周辺部に熱ストレスを与えることなく、一定圧力の不活性ガス雰囲気中に放置することによりエポキシ樹脂と溶解剤との反応を十分に進行させることができる。 Furthermore, according to the invention according to claim 3, the reaction between the epoxy resin and the dissolving agent is sufficiently performed by leaving it in an inert gas atmosphere at a constant pressure without applying thermal stress to the peripheral portion of the specific semiconductor element. Can proceed to.
さらにまた、請求項４に係る発明によれば、特定の半導体素子の周辺部並びに基板等に溶解剤を極力残さないようにすることにより、実装後の溶解剤の悪影響を無くすことができる。 Furthermore, according to the fourth aspect of the present invention, the adverse effect of the solubilizer after mounting can be eliminated by preventing the solubilizer from remaining in the peripheral portion of the specific semiconductor element and the substrate as much as possible.
そして、請求項５に係る発明によれば、実装基板を予熱することにより、半導体素子の加熱時間を短縮することができ、リワーク処理のタクトを短縮することができる。 According to the invention of claim 5, by preheating the mounting substrate, the heating time of the semiconductor element can be shortened, and the tact time of the rework process can be shortened.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明による実装半導体素子のリワーク方法を説明するフローチャートである。この実装半導体素子のリワーク方法は、酸無水硬化剤を使用したエポキシ樹脂でアンダーフィルされた、例えばＣＳＰ（Ｃｈｉｐ Ｓｉｚｅ Ｐａｃｋａｇｅ）やＢＧＡ（Ｂａｌｌ Ｇｒｉｄ Ａｒｒａｙ）等の実装半導体素子のリワーク方法であって、実装基板上の特定の半導体素子の周囲に上記エポキシ樹脂の溶解剤を塗布し、常温で一定時間放置して上記エポキシ樹脂を軟化並びに接着力の低下による界面剥離をさせる第１ステップと、上記特定の半導体素子の上面を加熱して該半導体素子の端子部と上記実装基板の電極パッドとを接続する半田バンプを溶融させる第２ステップと、上記特定の半導体素子を取り外す第３ステップと、を実行するものである。 Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a flowchart illustrating a method for reworking a mounted semiconductor device according to the present invention. This rework method of a mounted semiconductor element is a rework method of a mounted semiconductor element, such as CSP (Chip Size Package) or BGA (Ball Grid Array), which is underfilled with an epoxy resin using an acid anhydride curing agent, A first step of applying a solution of the epoxy resin around a specific semiconductor element on a mounting substrate, and allowing the epoxy resin to soften and debond at the interface for a certain period of time at room temperature; Performing a second step of heating a top surface of the semiconductor element to melt a solder bump connecting the terminal portion of the semiconductor element and the electrode pad of the mounting substrate, and a third step of removing the specific semiconductor element. To do.
以下、図１を参照して、本発明の実装半導体素子のリワーク方法をより詳細に説明する。
先ず、ステップＳ１においては、図２に示すように、実装基板１上の取り外そうとする半導体素子２の周囲に例えば脱脂綿等の吸湿材３を廻らせ、該吸湿材３に酸無水硬化剤を使用したエポキシ樹脂４の溶解剤５を例えばスポイド６により供給して浸み込ませ、上記半導体素子２を封止する上記エポキシ樹脂４に上記溶解剤５を塗布する。ところで、本出願人が実験により確認したところによると、この溶解剤５は、約４０℃以上に温めると基板１の表面に塗布された保護用のエポキシ系レジストを剥離させてしまった。そこで、本実施形態においては、そのまま常温で約１２時間〜２４時間放置し、エポキシ樹脂４と溶解剤５とを十分に反応させてエポキシ樹脂４を軟化並びに接着力の低下による界面剥離をさせる。この場合、上記溶解剤５は、大気中では反応が低下する為、一定圧力の不活性ガス雰囲気中に一定時間放置するとよい。溶解剤５を上記吸湿材３に浸み込ませるのは、溶解剤５を大気から遮断する意味からも効果的である。なお、上記溶解剤５としては、例えばエチレングリコールをベースとする日化精工（株）製のウレソルブプラスＳＧが好ましく、又はプロピレングリコールをベースとしたものであってもよい。これらの溶解剤５は、常温で反応させることにより酸無水硬化剤を使用したエポキシ樹脂４等の特定の樹脂を溶解し、実装基板１、及び該基板１上に塗布された保護用のエポキシ系レジストや金属部を侵すおそれがない。また、溶解剤の反応終了後洗浄し恒温槽並びに真空装置により樹脂の乾燥を行う。
Hereinafter, with reference to FIG. 1, the reworking method of the mounting semiconductor element of this invention is demonstrated in detail.
First, in step S1, as shown in FIG. 2, a hygroscopic material 3 such as absorbent cotton is rotated around the semiconductor element 2 to be removed on the mounting substrate 1, and an acid anhydride curing agent is provided on the hygroscopic material 3. The solubilizing agent 5 of the epoxy resin 4 using, for example, is supplied and immersed by the spoid 6, and the solubilizing agent 5 is applied to the epoxy resin 4 that seals the semiconductor element 2. By the way, according to an experiment confirmed by the present applicant, when the dissolving agent 5 is heated to about 40 ° C. or more, the protective epoxy resist applied to the surface of the substrate 1 is peeled off. Therefore, in the present embodiment, the epoxy resin 4 and the dissolving agent 5 are sufficiently reacted to stand at room temperature for about 12 hours to 24 hours, thereby softening the epoxy resin 4 and causing interfacial peeling due to a decrease in adhesive force. In this case, since the reaction of the dissolving agent 5 decreases in the air, it is preferable to leave the dissolving agent 5 in an inert gas atmosphere at a constant pressure for a certain period of time. The soaking of the dissolving agent 5 in the hygroscopic material 3 is also effective from the viewpoint of blocking the dissolving agent 5 from the atmosphere. As the solubilizing agent 5, for example, Uresolv Plus SG manufactured by Nikka Seiko Co., Ltd. based on ethylene glycol is preferable, or one based on propylene glycol may be used. These solubilizers 5 dissolve a specific resin such as an epoxy resin 4 using an acid anhydride curing agent by reacting at room temperature, and mount the substrate 1 and a protective epoxy system applied on the substrate 1. There is no risk of damaging the resist or metal parts. Further, after completion of the reaction of the solubilizer, the resin is washed and the resin is dried by a thermostatic bath and a vacuum apparatus.
ステップＳ２においては、図３に示すように、実装基板１を加熱ステージ７上に載置して基板１の表面１ａが、半導体素子２の端子部と実装基板１の電極パッド８と接続する半田バンプ９の溶融温度よりも低い約１００℃となるように予熱した後、こて先１０ａの温度が半田バンプ９の溶融温度よりも高い、例えば約４０５℃となるように加熱した高周波半田ごて１０を矢印Ｆで示すように半導体素子２の上面２ａに押し当てて５分程度半導体素子２を加熱し、半田バンプ９を溶融させる。高周波半田ごて１０は、温度制御が容易であるため、半田バンプ９を過不足なく加熱して確実に溶融させることができる。この場合、上記半田ごて１０のこて先１０ａを半導体素子２の上面２ａの面積に等しいか又はそれよりも大きい面積の平坦面に形成すれば、半導体素子２を均一に加熱することができ、半導体素子２の全ての半田バンプ９を一様に溶融させることができる。なお、本実施形態においては、半田バンプ９を溶融させる前に、エポキシ樹脂４を溶解させて半田バンプ９から剥離させているので、エポキシ樹脂４と半田バンプ９との間には微小の隙間が生じており、従来技術と違って、溶融した半田バンプ９が膨張したエポキシ樹脂４に押されてエポキシ樹脂４から漏れ出すことがない。したがって、漏れ出した半田バンプ９が半導体素子２の周辺部で再硬化して半導体素子２の取り外しを困難にするという問題もない。 In step S2, as shown in FIG. 3, the mounting substrate 1 is placed on the heating stage 7, and the surface 1a of the substrate 1 is connected to the terminal portion of the semiconductor element 2 and the electrode pad 8 of the mounting substrate 1. After preheating so as to be about 100 ° C. lower than the melting temperature of the bump 9, the high-frequency soldering iron heated so that the temperature of the tip 10 a is higher than the melting temperature of the solder bump 9, for example, about 405 ° C. 10 is pressed against the upper surface 2a of the semiconductor element 2 as indicated by an arrow F, and the semiconductor element 2 is heated for about 5 minutes to melt the solder bumps 9. Since the high-frequency soldering iron 10 is easy to control the temperature, the solder bumps 9 can be heated and melted without fail. In this case, if the tip 10a of the soldering iron 10 is formed on a flat surface having an area equal to or larger than the area of the upper surface 2a of the semiconductor element 2, the semiconductor element 2 can be heated uniformly. All the solder bumps 9 of the semiconductor element 2 can be uniformly melted. In this embodiment, since the epoxy resin 4 is dissolved and peeled off from the solder bump 9 before the solder bump 9 is melted, there is a small gap between the epoxy resin 4 and the solder bump 9. Unlike the prior art, the melted solder bump 9 is not pushed by the expanded epoxy resin 4 and leaks out of the epoxy resin 4. Therefore, there is no problem that the leaked solder bumps 9 are re-cured around the semiconductor element 2 to make it difficult to remove the semiconductor element 2.
ステップＳ３においては、図４に示すように実装基板１の予熱状態を維持したまま上記半田ごて１０を取除き、器具１１を使用して半導体素子２の下端部を上方（矢印Ｇ方向）に押し上げ、半導体素子２を実装基板１から取り外す。この場合、非金属製のピンセット等の先端が尖った器具１１を使用すれば、熱の逃げがなく半導体素子２の取り外しが容易になる。また、半田ごて１０を取除いても基板１が予熱されているので、溶融した半田バンプ９が直ぐには再硬化せず、半導体素子２の取り外しに時間的余裕を確保することができる。 In step S3, the soldering iron 10 is removed while maintaining the preheated state of the mounting board 1 as shown in FIG. 4, and the lower end of the semiconductor element 2 is moved upward (in the direction of arrow G) using the tool 11. The semiconductor element 2 is removed from the mounting substrate 1 by pushing up. In this case, if the tool 11 having a sharp tip such as non-metallic tweezers is used, there is no escape of heat and the semiconductor element 2 can be easily removed. Further, since the substrate 1 is preheated even if the soldering iron 10 is removed, the melted solder bumps 9 are not immediately re-cured, and a time margin can be secured for the removal of the semiconductor element 2.
ステップＳ４においては、図５に示すように半導体素子２が取り外された領域１２の基板１の表面１ａがクリーンアップされる。ここでは、先ず、同図（ａ）に示すように、半導体素子２が取り外された領域１２に酸無水硬化剤を使用したエポキシ樹脂４の溶解剤５をスポイド６等を使用して適量滴下し、又は綿棒や脱脂綿等の吸湿材に浸み込ませて塗布した後、常温の下、一定圧力の不活性ガス雰囲気中に一定時間放置して上記エポキシ樹脂４の残渣４ａと溶解剤５とを反応させる。その後、綿棒や布等の軟質部材を使用して上記領域１２のエポキシ樹脂４の残渣４ａを拭き取る（同図（ｂ）参照）。なお、ステップＳ１において、半導体素子２周囲の軟化したエポキシ樹脂４を、竹串や耳かき状の道具等を使用して事前に取除いておけば、ステップＳ４における同工程の作業が容易になる。 In step S4, as shown in FIG. 5, the surface 1a of the substrate 1 in the region 12 from which the semiconductor element 2 has been removed is cleaned up. Here, first, as shown in FIG. 2A, an appropriate amount of a dissolving agent 5 of an epoxy resin 4 using an acid anhydride curing agent is dropped into a region 12 where the semiconductor element 2 is removed using a dropoid 6 or the like. Or after being soaked in a hygroscopic material such as a cotton swab or absorbent cotton and left in an inert gas atmosphere at a constant pressure at room temperature for a certain period of time, the residue 4a of the epoxy resin 4 and the dissolving agent 5 are React. Thereafter, the residue 4a of the epoxy resin 4 in the region 12 is wiped off using a soft member such as a cotton swab or cloth (see FIG. 5B). In step S1, if the softened epoxy resin 4 around the semiconductor element 2 is removed in advance using a bamboo skewer or an ear-pick-like tool, the work in the same step in step S4 is facilitated.
次に、図５（ｂ）に示すように、電極パッド８上に残った半田１３を、例えば加熱した銅メッシュに吸引させて除去する（同図（ｃ）参照）。 Next, as shown in FIG. 5B, the solder 13 remaining on the electrode pad 8 is removed by suction, for example, with a heated copper mesh (see FIG. 5C).
続いて、無水エチルアルコール等の有機溶剤を浸み込ませた綿棒や布等の軟質部材を使用して上記領域１２の電極パッド８上の異物を界面活性剤にて拭き取る。その後、所定温度に加温した状態で１００Ｐａ〜１Ｐａの真空の下で乾燥し、溶解剤及び水分を除去する。 Subsequently, a foreign material on the electrode pad 8 in the region 12 is wiped with a surfactant using a soft member such as a cotton swab or cloth soaked with an organic solvent such as anhydrous ethyl alcohol. Then, it dries under a vacuum of 100 Pa to 1 Pa in a state heated to a predetermined temperature to remove the dissolving agent and moisture.
ステップＳ５においては、半導体素子２が取除かれた領域１２にクリーム半田印刷した後、新たな半導体素子を取り付ける。これにより、実装半導体素子の一連のリワーク処理が終了する。 In step S5, after solder cream printing is performed on the region 12 where the semiconductor element 2 has been removed, a new semiconductor element is attached. Thereby, a series of rework processing of the mounted semiconductor element is completed.
なお、上記実施形態においては、ステップＳ１において、半導体素子２の周囲に吸湿材３を廻らせ、該吸湿材３に溶解剤５を供給する場合について説明したが、本発明はこれに限られず、半導体素子２を取り囲んで薄壁を形成してその内側に溶解剤５を供給するようにしてもよい。 In the above embodiment, the description has been given of the case where the hygroscopic material 3 is rotated around the semiconductor element 2 and the dissolving agent 5 is supplied to the hygroscopic material 3 in step S1, but the present invention is not limited thereto. A thin wall may be formed surrounding the semiconductor element 2 and the dissolving agent 5 may be supplied to the inside thereof.
また、上記実施形態においては、ステップＳ２，Ｓ３において実装基板１を予熱する場合について説明したが、基板１の予熱はしなくてもよい。ただ、実装基板１は、一般に放熱性が良好であるため、半導体素子２の上面を加熱するだけでは、半田バンプ９にそれを溶融させるだけの十分な熱を短時間に供給することができず、半導体素子２の取り外しに長時間を要してしまう問題がある。 Moreover, in the said embodiment, although the case where the mounting board | substrate 1 was preheated in step S2, S3 was demonstrated, the board | substrate 1 does not need to be preheated. However, since the mounting substrate 1 generally has good heat dissipation, simply heating the upper surface of the semiconductor element 2 cannot supply the solder bump 9 with sufficient heat to melt it in a short time. There is a problem that it takes a long time to remove the semiconductor element 2.
１…基板
２…半導体素子
３…吸湿材
４…酸無水硬化剤を使用したエポキシ樹脂
５…エポキシ樹脂の溶解剤
８…電極パッド
９…半田バンプ
DESCRIPTION OF SYMBOLS 1 ... Board | substrate 2 ... Semiconductor element 3 ... Hygroscopic material 4 ... Epoxy resin using acid anhydride hardening agent 5 ... Solvent of epoxy resin 8 ... Electrode pad 9 ... Solder bump
Claims (5)
実装基板上の特定の半導体素子の周囲に前記エポキシ樹脂の溶解剤を塗布し、常温で一定時間放置して前記エポキシ樹脂を軟化並びに接着力の低下による界面剥離をさせる第１ステップと、
前記特定の半導体素子の上面を加熱して該半導体素子の端子部と前記実装基板の電極パッドとを接続する半田バンプを溶融させる第２ステップと、
前記特定の半導体素子を取り外す第３ステップと、
を実行することを特徴とする実装半導体素子のリワーク方法。 A method for reworking a mounting semiconductor element underfilled with an epoxy resin using an acid anhydride curing agent,
A first step of applying a dissolving agent of the epoxy resin around a specific semiconductor element on a mounting substrate, and allowing the epoxy resin to soften and debond at a normal temperature at room temperature for a certain period of time;
A second step of heating a top surface of the specific semiconductor element to melt a solder bump connecting the terminal portion of the semiconductor element and the electrode pad of the mounting substrate;
A third step of removing the specific semiconductor element;
A method for reworking a mounted semiconductor element, comprising:
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