JP2011257657A - Forming method and forming device of electrophotographic photoreceptor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a forming method and a forming device of an electrophotographic photoreceptor which can form an electrophotographic photoreceptor excellent in the uniformity of a film characteristic.SOLUTION: In a forming method of an electrophotographic photoreceptor, a cylindrical base body 101 and an auxiliary base body 103 are installed in this order in a base body holder 102. The base body holder 102 provided with the cylindrical base body 101 and the auxiliary base body 103 is installed on a cradle 107 which is grounded and connected in a reaction vessel that can be decompressed. Raw material gas is introduced into the reaction vessel, and high-frequency power is applied to an electrode installed so as to encircle the cylindrical base body 101, thereby forming a deposition film on the cylindrical base body 101. The formation of the deposition film is made under the state that the auxiliary base body 103 is pressurized in the longitudinal direction of the cylindrical base body 101 by a pressure means (a spring 106) and the auxiliary base body 103 is pressed to the cylindrical base body 101.

Description

  The present invention relates to a method and apparatus for forming an electrophotographic photosensitive member using a plasma CVD method.

Conventionally, as an electrophotographic photoreceptor, a deposited film composed of amorphous silicon, for example, an amorphous material containing a hydrogen atom and / or a halogen atom and having a silicon atom as a base has been proposed. Has been.
As a method for forming a deposited film made of amorphous silicon, there is a plasma CVD method in which plasma of a deposited film forming gas is generated by glow discharge with high-frequency power and the decomposition species is deposited on a substrate.

When a deposited film having a large area such as an electrophotographic photosensitive member is formed by these methods, it is necessary to make the film characteristics uniform, and various proposals have been made regarding the configuration of the apparatus for forming the deposited film. .
For example, when forming an electrophotographic photosensitive member made of amorphous silicon, it is necessary to transport and hold the cylindrical substrate in a vacuum reaction vessel, and therefore it is disclosed to insert a substrate holder into the cylindrical substrate. . Further, it is disclosed that an auxiliary substrate is provided on the upper portion of the substrate for the purpose of preventing chemical species decomposed during the formation of the deposited film from entering the back side of the substrate. (See Patent Document 1)

JP 2000-073173 A

Conventionally, the film characteristics of the deposited film have been made uniform by the above-described measures.
However, in recent years, uniformity of the film characteristics of the deposited film has been demanded more than ever with the enhancement of the function of the apparatus using such a deposited film, for example, the digitization and colorization of the electrophotographic apparatus.
For example, in recent high-quality color devices using an electrophotographic process, the gradation is improved, so that the formed image can be visualized even with non-uniformity in the film properties of the deposited film, which has not been a practical problem in the past. May cause unevenness. For this reason, it has become difficult to ensure the uniformity of the film characteristics of the deposited film that is required in recent years only by the conventional technique as described above.
The present invention has been made in view of the prior art as described above, and provides an electrophotographic photosensitive member forming method and a forming apparatus capable of forming an electrophotographic photosensitive member excellent in uniformity of film characteristics. For the purpose.

In order to achieve the above object, a method for forming an electrophotographic photosensitive member according to the present invention includes a substrate holder in which a cylindrical substrate and an auxiliary substrate are sequentially installed, and the substrate holder on which the cylindrical substrate and the auxiliary substrate are mounted is provided. By installing on a pedestal connected to ground in a depressurizable reaction vessel, introducing a source gas into the reaction vessel, and applying high frequency power to an electrode installed so as to surround the cylindrical substrate In the method of forming an electrophotographic photosensitive member in which a deposited film is formed on the cylindrical substrate, the auxiliary substrate is pressed in the longitudinal direction of the cylindrical substrate by a pressing means, and the auxiliary substrate is pressed into the cylindrical substrate. The deposited film is formed in a pressed state.
In order to achieve the above object, the electrophotographic photosensitive member forming apparatus according to the present invention includes a reaction vessel that can be depressurized, and a grounded cradle for installing a cylindrical substrate holding device that holds the cylindrical substrate. An apparatus for forming an electrophotographic photosensitive member by plasma CVD, comprising: means for supplying a source gas into the reaction vessel; means for exhausting the reaction vessel; and means for exciting the source gas with high-frequency power The cylindrical substrate holding device includes a substrate holder that penetrates the cylindrical substrate and holds the lower end of the cylindrical substrate, an auxiliary substrate installed on the upper portion of the cylindrical substrate, and the substrate holder. A pressing plate that is pressed by the auxiliary substrate and the pressing plate in a space formed by the substrate holder, the auxiliary substrate, and the pressing plate. And having a spring which is prestressed in the direction.

  According to the present invention, it is possible to form an electrophotographic photoreceptor excellent in uniformity of film characteristics.

It is typical sectional drawing which shows the installation method and pressurization means of the cylindrical base | substrate which concern on this invention. It is typical sectional drawing which shows the installation method and pressurization means of the cylindrical base | substrate which concern on this invention. (A) is typical sectional drawing which shows the installation method and pressurization means of the cylindrical base | substrate which concern on this invention. (B) is a schematic top view which shows an example of the press plate which concerns on this invention. (C) is a schematic top view showing an example of a substrate holder according to the present invention. (D) is a typical side view showing an example of a substrate holder concerning the present invention. (E) is a typical top view which shows an example of the cylindrical base | substrate holding | maintenance apparatus before installing the press plate which concerns on this invention. (A) is typical sectional drawing which shows the installation method and pressurization means of the cylindrical base | substrate which concern on this invention. (B) is a schematic top view which shows an example of the cylindrical base | substrate holding | maintenance apparatus before installing the press plate which concerns on this invention. It is typical sectional drawing of the installation method of the cylindrical base | substrate installed in the conventional plasma CVD apparatus. It is typical sectional drawing which shows the installation method and pressurization means of the cylindrical base | substrate which concern on this invention. 1 is a schematic schematic diagram illustrating an example of a forming apparatus for forming an electrophotographic photosensitive member according to the present invention. 1 is a schematic diagram showing an example of a plasma CVD apparatus for forming a deposited film of an electrophotographic photosensitive member according to the present invention. It is a schematic diagram which shows an example of the layer structure for amorphous silicon electrophotographic photoreceptors.

In order to improve the uniformity of the film characteristics of the deposited film, the present inventors have intensively studied the configuration of the deposited film forming apparatus.
As a result, when using high-frequency power as discharge power, the ground plane for high-frequency power between the cylindrical base and the auxiliary base and between the cylindrical base and the base holder is discontinuous. It has been found that it is important to make the device configuration to be reduced.

Since the ground plane for the high-frequency power at the above location is discontinuous only with the conventional technology as described above, the plasma at the upper and lower ends of the cylindrical substrate becomes non-uniform, and the uniformity of the film characteristics of the deposited film is sufficient. It was found that there are cases where it cannot be obtained.
FIG. 5 is a cross-sectional view schematically showing an example of a method for installing a cylindrical substrate that is installed in a plasma CVD apparatus when a conventional electrophotographic photosensitive member made of amorphous silicon is formed.
In FIG. 5A, a cylindrical substrate 501 is installed on a substrate holder 502, and an auxiliary substrate 503 is installed on the cylindrical substrate 501. A substrate heating heater 504 is installed in the substrate holder 502. Further, the substrate holder 502 is grounded at the upper and lower ends.
In this case, the auxiliary base body 503 is merely placed on the cylindrical base body 501, and conduction with high-frequency power with the base body holder 502 is not necessarily ensured sufficiently. For this reason, although the base holder 502 is grounded at the upper and lower ends, the grounding state of the upper end is not sufficiently transmitted to the auxiliary base 503, and the grounding state with respect to the high frequency power becomes insufficient.

  Further, since the auxiliary base 503 and the cylindrical base 501 are in contact with each other only by the weight of the auxiliary base 503, the cylindrical base 501 cannot be said to be in full contact with the auxiliary base 503 over the entire circumference. The continuity between the base body 501 and the auxiliary base body 503 is not always ensured sufficiently. That is, the high frequency power is easily affected by the contact state even in a state where sufficient conduction is ensured in the direct current at the connection portion between the cylindrical base 501 and the auxiliary base 503. As a result, sufficient continuity is not ensured. In such a case, the uniformity of the potential seen from the plasma from the cylindrical substrate 501 to the auxiliary substrate 503 cannot be sufficiently secured, the plasma at the upper end of the cylindrical substrate 501 becomes non-uniform, and the uniformity of the deposited film is reduced. You may not get enough. In particular, when there is a microscopic gap in the contact surface in the circumferential direction between the auxiliary substrate 503 and the cylindrical substrate 502, the plasma may concentrate there, and the uniformity of the film characteristics may be significantly deteriorated. . “The uniformity of the potential as seen from the plasma from the cylindrical substrate 501 to the auxiliary substrate 503” means “the potential difference between the plasma space and the surface of the cylindrical substrate 501” and “the potential difference between the plasma space and the surface of the auxiliary substrate 503”. "Uniformity" ".

Similarly, there may be a case where the uniformity of the deposited film cannot be sufficiently obtained with respect to the connecting portion between the cylindrical substrate 501 and the substrate holder 502.
As a method for sufficiently bringing the cylindrical base body 501 and the auxiliary base body 503 into contact with each other to enhance conduction, a configuration as shown in FIG.
In FIG. 5B, the conductive presser claw 505 is fixed to the auxiliary base 503 with a screw 506 to enhance conduction between the auxiliary base 503 and the cylindrical base 501.

According to this method, since the conduction between the cylindrical base body 501 and the auxiliary base body 503 is enhanced through the presser claw 505, the ground surface for high-frequency power is discontinuous at the connection portion between the cylindrical base body 501 and the auxiliary base body 503. It becomes possible to reduce becoming.
However, in the presser claw 505 as shown in FIG. 5B, the circumferential direction between the auxiliary base 503 and the cylindrical base 502 as described above is provided to enhance conduction by applying a force in the radial direction of the cylindrical base 501. This is ineffective for preventing microscopic gaps on the contact surface. For this reason, there is a limit to homogenization of plasma.

Further, when a structure such as a presser claw 505 or a screw 506 is attached around the cylindrical base body 501 and the auxiliary base body 503, the plasma at the upper end of the cylindrical base body becomes non-uniform due to the difference in level, and the deposited film In some cases, sufficient uniformity cannot be obtained.
A configuration as shown in FIG. 5C is conceivable as a method of making the cylindrical base 501 and the auxiliary base 503 sufficiently contact to enhance conduction without forming a step as shown in FIG. 5B.
In FIG. 5C, the conduction is enhanced by providing a conductive leaf spring 507 between the auxiliary base 503 and the cylindrical base 501.

According to this method, since the conduction between the cylindrical base body 501 and the auxiliary base body 503 is enhanced via the leaf spring 507, it is possible to reduce the discontinuity of the ground plane for high-frequency power at the connection portion. Become.
However, even when such conduction enhancement by the leaf spring 507 is performed, there is no effect in preventing the microscopic gap on the circumferential contact surface as described above. There was a limit.

Further, as shown in FIG. 5C, when the end of the cylindrical base 501 is directly pressed in the radial direction by the leaf spring 507, the cylindrical base 501 cannot be uniformly pressed, and the cylindrical base 501 is distorted. May end up.
If a deposited film is formed in a state where there is such a distortion and then released, stress is applied to the deposited film, and the uniformity of the film characteristics of the deposited film may not be sufficiently obtained.

On the other hand, if the pressure applied by the spring when it is fixed by the leaf spring 507 is reduced to such an extent that it does not adversely affect as described above, a contact force sufficient to enhance the conduction between the cylindrical base 501 and the auxiliary base 503 cannot be obtained. There is.
As described above, the above-described conventional technology alone may not provide sufficient uniformity of film characteristics that can withstand use in a recent high-quality color apparatus using an electrophotographic process.
Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.

"Cylindrical substrate installation method and pressurizing means"
FIG. 2 is a schematic cross-sectional view for explaining the cylindrical substrate installation method and pressurizing means of the present invention. A cylindrical substrate 201 is installed on a substrate holder 202, and an auxiliary substrate 203 is installed on the cylindrical substrate 201. A substrate holder 202 on which the cylindrical substrate 201 and the auxiliary substrate 203 are mounted is installed on a grounded cradle 207 in the reaction vessel. A substrate heating heater 204 is installed in the substrate holder 202. The cradle 207 is provided on the lower wall 208 that is grounded.

The material of the cylindrical base 201 may be any material depending on the intended use. As a material of the cylindrical base 201, for example, copper, aluminum, nickel, cobalt, iron, chromium, molybdenum, titanium, or an alloy thereof can be used. Among these, aluminum is excellent in consideration of workability and manufacturing cost. In this case, it is preferable to use either an Al—Mg alloy or an Al—Mn alloy.
Further, the material of the base holder 202 and the auxiliary base 203 may be the same as those used for the cylindrical base 201.

The shape of the substrate holder 202 is not particularly limited as long as the cylindrical substrate 201 can be transported and held in the vacuum reaction vessel. However, since the cylindrical base body 201 can be easily installed, a shape that holds the lower end of the cylindrical base body 201 as shown in FIG. 2 is suitable.
The shape of the auxiliary base 203 is not particularly limited as long as it can sufficiently contact the cylindrical base 201.

Any substrate heating heater 204 may be used as long as it can be used in a vacuum. Specifically, there are electric resistance heating elements such as sheath heaters, plate heaters, ceramic heaters, carbon heaters, heat radiation lamps such as halogen lamps and infrared lamps, and heat exchange means using liquid or gas as a heat medium. Listed as a target.
A presser plate 206 is connected to the upper wall 205 shown in FIG. The upper wall 205, the spring 209, and the presser plate 206 are grounded. The material of the pressing plate 206 is not particularly limited as long as it has high electrical conductivity and has a strength sufficient to pressurize the auxiliary base 203. The material of the pressing plate 206 may be the same as that used for the cylindrical substrate 201.

  The auxiliary base 203 is pressed in the longitudinal direction of the cylindrical base 201 by the spring 209 and the presser plate 206. As a result, the auxiliary base 203 is pressed against the cylindrical base 201. Therefore, the cylindrical base 201 is sufficiently in contact with the auxiliary base 203 over the entire circumference, and sufficient conduction with respect to the high-frequency power is ensured at the connecting portion between the cylindrical base 201 and the auxiliary base 203. And the uniformity of the electric potential seen from the plasma from the cylindrical base | substrate 201 to the auxiliary | assistant base | substrate 203 is fully ensured. Thereby, the uniformity of the plasma at the upper end of the cylindrical substrate 201 is improved, and the uniformity of the deposited film can be improved.

By pressing the cylindrical substrate 201 with the auxiliary substrate 203, the cylindrical substrate 201 is also pressed against the substrate holder 202. Therefore, the uniformity of the deposited film is similarly applied to the connecting portion between the cylindrical substrate 201 and the substrate holder 202. Can be improved.
Further, according to the present invention, since the auxiliary base 203 and the cylindrical base 201 are pressed in the longitudinal direction by the spring 209, the contact surface in the circumferential direction between the auxiliary base 203 and the cylindrical base 201 is microscopically. Even if it sees, it is contact | adhering enough and a clearance gap does not generate | occur | produce. For this reason, the plasma does not concentrate in the gap and the uniformity of the film characteristics is not deteriorated, and a significant improvement in uniformity can be achieved.

  Compared with the case where the auxiliary substrate 203 is pressed in the radial direction of the cylindrical substrate 201, when the auxiliary substrate 203 is pressed in the longitudinal direction of the cylindrical substrate 201, the strength of the cylindrical substrate 201 is greater in the longitudinal direction than in the radial direction. Therefore, the cylindrical substrate 201 is hardly distorted. Therefore, since a higher pressing force can be applied when the auxiliary base 203 is pressed in the longitudinal direction of the cylindrical base 201, the cylindrical base 201 and the auxiliary base 203 can be brought into sufficient contact over the entire circumference. .

The means for pressing the auxiliary base 203 is not particularly limited as long as the auxiliary base 203 can be pressed in the longitudinal direction of the cylindrical base 201. However, as a simple method without requiring modification of the apparatus, the auxiliary base 203 is supported by a spring 106 as shown in FIG. A method of pressurizing the substrate 103 is preferable.
In FIG. 1, a cylindrical base 101 is mounted on a base holder 102, and an auxiliary base 103 is installed on the cylindrical base 101. The substrate holder 102 on which the cylindrical substrate 101 and the auxiliary substrate 103 are mounted is installed on a receiving base 107 connected to the ground in the reaction vessel.

Similar to FIG. 2, since the cradle 107 is provided on the lower wall 108 that is grounded, it is grounded similarly to the lower wall 108.
As a method of grounding the upper end of the base holder 102, there is a method of attaching a conductive bar 110 to the upper wall 109 that is grounded and pressing the bar 110 against the upper end of the base holder 102. Accordingly, the lower end of the base holder 102 is grounded at the upper and lower ends by the cradle 107 and the lower wall 108, and the upper end of the base holder 102 is connected at the upper and lower ends by the rod-like body 110 and the upper wall 109.

As described above, in order to improve the uniformity of plasma throughout the reaction vessel, the substrate holder 102 is preferably grounded at the upper and lower ends.
The auxiliary base 103 and the base holder 102 are fixed by screws 105.
The screw 105 is not particularly limited as long as it has a strength sufficient to fix the auxiliary base 103 to the base holder 102, but is preferably conductive for ground connection through the screw 105. As the material of the screw 105, for example, copper, aluminum, nickel, cobalt, iron, chromium, molybdenum, titanium, and alloys thereof are preferable.

In the present invention, a spring 106 that is an elastic member may be provided between the screw 105 and the auxiliary base 103. By providing a spring 106 between the screw 105 and the auxiliary base 103, the space between the top of the screw 105 and the auxiliary base 103 is spread. By pushing the screw 105, the spring 106, which is an elastic member, is pressed against the auxiliary base 103. As a result, the auxiliary base 103 is pressed against the cylindrical base 101. At this time, the upper part of the cylindrical base 101 is grounded by a conduction path from the base holder 102 to the screw 105, from the screw 105 to the spring 106, from the spring 106 to the auxiliary base 103, and from the auxiliary base 103 to the cylindrical base 101. .
By appropriately selecting the tightening torque of the screw 105, it is possible to appropriately adjust the force with which the auxiliary base 103 is pressed by the spring 106.

In addition, when the pressure is applied only with the spring, the force for pressing the auxiliary base by the spring can be appropriately adjusted by appropriately selecting the spring constant of the spring and the pushing length of the spring.
If the force for pressing the auxiliary substrate 103 is too strong, the cylindrical substrate 101 may be distorted even if the cylindrical substrate 101 is pressed in the longitudinal direction by the auxiliary substrate 103. Conversely, if the force for pressurizing the auxiliary base 103 is too weak, the contact surface in the circumferential direction between the auxiliary base 103 and the cylindrical base 101 may not be sufficiently adhered even when viewed microscopically. For this reason, the uniformity of the deposited film may not be sufficiently obtained.

For the above reasons, the pressure applied to the cylindrical substrate 101 by the auxiliary substrate 103, that is, the force applied per unit area at the portion where the cylindrical substrate 101 and the auxiliary substrate 103 are in contact is 50 kgf / cm ² or more and 900 kgf / cm. It is preferable to set it to ² or less. More preferably, the force per unit area is set to 100 kgf / cm ² or more and 500 kgf / cm ² or less in a portion where the cylindrical substrate 101 and the auxiliary substrate 103 are in contact with each other.
The pressure with which the auxiliary base 103 presses the cylindrical base 101 is equal to the sum of the pressure with which the spring 106 presses the auxiliary base 103 and the pressure with which the auxiliary base 103 presses due to its own weight. Therefore, by adjusting the pressure for pressurizing the auxiliary base 103 and the weight of the auxiliary base 103, the pressure at which the auxiliary base 103 presses the cylindrical base 101 can be adjusted.

The spring 106 is not particularly limited as long as it can be used in vacuum, plasma, or high temperature. However, the spring 106 is preferably made of a conductive material because it can be connected to the ground via the spring 106, and cost and handling are easy. It is.
As the material of the spring 106, nickel-chromium alloy, titanium, and stainless steel are suitable.
The auxiliary base 103 is pressed in the longitudinal direction of the cylindrical base 101 by the spring 106. Thereby, the auxiliary base 103 is pressed against the cylindrical base 101. Therefore, the cylindrical base 101 is in sufficient contact with the auxiliary base 103 over the entire circumference without any gap, and sufficient conduction with respect to the high-frequency power is ensured at the connecting portion between the cylindrical base 101 and the auxiliary base 103. As a result, the uniformity of the potential as seen from the plasma from the cylindrical substrate 101 to the auxiliary substrate 103 is sufficiently ensured. Thereby, the uniformity of the plasma at the upper end of the cylindrical substrate 101 is improved, and the uniformity of the deposited film can be improved.

Further, as an example of the configuration of the cylindrical substrate holding device that can be transported by the transporting unit and is used for production, the configuration as shown in FIG.
In FIG. 3A, a cylindrical base 301 is mounted on a base holder 302, and an auxiliary base 303 is installed on the cylindrical base 301. Further, a spring 304 is installed between the base holder 302 and the auxiliary base 303, and a pressing plate 305 is provided above the spring. The lower part of the spring 304 is configured to contact a part of the auxiliary base 303. By adopting such a configuration, a screw or a spring does not protrude above the base holder 302, and the configuration of the transport unit can be simplified.

  More specifically, the base holder 302 penetrates the cylindrical base 301 and is held at the lower end of the cylindrical base, and the auxiliary base 303 is held at the upper end of the cylindrical base. A spring 304 is installed between the substrate holder 302 and the auxiliary substrate 303, and a pressing plate 305 is further installed thereon. The pressing plate 305 is designed to be fitted and fixed to the base holder 302.

  As for the space for installing the spring 304, as shown in FIG. 3A, the lower part of the auxiliary base 303 has the same diameter as the cylindrical base 301 within a tolerance range, and the upper part has a larger diameter than the cylindrical base 301. By doing so, it is good also as a structure which can incorporate the spring 304. FIG. Further, as shown in FIG. 4A, the auxiliary base 403 has the same diameter as that of the cylindrical base 401 within a tolerance range, and the diameter of the upper part of the base holder 402 can be reduced to incorporate the spring 404. It may be.

  When the spring 304 is pressed by the pressing plate 305, and the pressing plate 305 is fitted to the base holder 302 and fixed, the spring 304 is stored in the longitudinal direction of the cylindrical base 301 by the pressing plate 305 and the auxiliary base 303. It becomes a state. As a result, the auxiliary base 303 is pressed against the cylindrical base 301. Therefore, the cylindrical base 301 is in sufficient contact with the auxiliary base 303 over the entire circumference without any gap, and sufficient conduction with respect to high-frequency power is ensured at the connection portion between the cylindrical base 301 and the auxiliary base 303. As a result, the uniformity of the potential seen from the plasma from the cylindrical substrate 301 to the auxiliary substrate 303 is sufficiently ensured. Thereby, the uniformity of the plasma at the upper end of the cylindrical substrate 301 is improved, and the uniformity of the deposited film can be improved.

  There are no particular restrictions on the configuration of the fitting and fixing portions for maintaining the pressurized state of the spring 304, but the configuration shown in FIGS. 3 (b) to 3 (d) can be used for ease of installation. Is preferred. FIG. 3B is a schematic top view of the pressing plate 305, FIG. 3C is a schematic top view of the base holder 302, and FIG. 3D is a schematic side view of the base holder 302. The pressing plate 305 is configured to have a claw 306 on the inner peripheral surface, and the base holder 302 is configured to have a groove 307 that can be fitted and fixed to the claw 306 provided on the inner peripheral surface of the pressing plate 305. The shape of the groove 307 formed in the substrate holder 302 is not particularly limited as long as it can be fitted and fixed to the claw 306. However, for ease of processing, as shown in FIG. 3D, a groove 307a formed in the longitudinal direction from the upper end portion of the base holder 302 and a groove 307b formed in the circumferential direction extending from the groove formed in the longitudinal direction. Is preferable.

  Using these, the pressing plate 305 is pressed toward the cylindrical base 301 so that the claw 306 is along the groove 307 a, and the spring 304 is contracted by the pressing plate 305. Thereafter, the pressing plate 305 is fixed by rotating the pressing plate 305 so that the claw 306 extends along the groove 307b. As a result, it is possible to pressurize the spring 304 with the pressing plate 305 and maintain the pressurized state, and the spring 304 is stored in the longitudinal direction of the cylindrical substrate 301 by the pressing plate 305 and the auxiliary substrate 303. It becomes a state. The claw 306 and the groove 307 may have any configuration as long as the spring 304 can be stored in the longitudinal direction of the cylindrical base body 301 by the pressing plate 305 and the auxiliary base body 303.

However, since the spring 304 can be uniformly accumulated in the longitudinal direction of the cylindrical base body 301, it is preferable that the claw 306 and the groove 307 are formed at two or more locations in the circumferential direction.
The pressing plate 305 is not particularly limited as long as the pressing plate 305 pressurizes the spring 304 and has a strength capable of maintaining the pressed state. However, the pressing plate 305 is preferably conductive because it can be connected to the ground via the pressing plate 305. As the material of the pressing plate 305, for example, copper, aluminum, nickel, cobalt, iron, chromium, molybdenum, titanium, and alloys thereof are preferable.

The spring 304 is not particularly limited as long as it can be used in vacuum, plasma, or high temperature. However, it is preferable that the spring 304 is made of a conductive material because it can be connected to the ground via the spring 304, and cost and handling are easy. .
As the material of the spring 304, nickel-chromium alloy, titanium, and stainless steel are suitable.
Also, the number and shape of the springs 304 are not particularly limited, and a plurality of small diameter springs that enter between the auxiliary base body 303 and the base body holder 302 are installed in the circumferential direction and pressed by the pressing plate 305 from above. Also good. Further, as shown in FIG. 3 (e), a single spring that surrounds the substrate holder 302 facilitates installation, and the auxiliary substrate 303 can be uniformly pressed in the longitudinal direction of the cylindrical substrate 301. Is preferable. FIG. 3E is a schematic top view of the cylindrical substrate holding device before the pressing plate 305 is installed.

As described above, by using a spring that surrounds the base holder 302 and using no screws, the number of parts of the cylindrical base holder can be reduced, and the assembly time can be shortened. It becomes.
In addition, since the number of parts of the cylindrical substrate holding device can be reduced, it is possible to shorten the cleaning time that was conventionally spent for removing the film adhered to these parts when forming the deposited film.

"Electrophotographic photoreceptor forming device"
FIG. 7 is a schematic diagram showing an example of an apparatus for forming an electrophotographic photosensitive member by a plasma CVD method. The configuration of the electrophotographic photosensitive member forming apparatus shown in FIG. 7 is as follows. This device is roughly divided into a charging device 7100, a heating device 7200, a reaction device 7300, a cooling and discharging device 7400, and a transfer device 7500 movable between these devices.
In a transfer container 7502 of the transfer device 7500, a holding unit 7507 for holding a substrate holder 7509 on which a cylindrical substrate 7508 and an auxiliary substrate 7510 are mounted and a chucking unit 7511 having a shaft for vertical movement are provided. Note that the holding portion 7507 can be held or not held by locking and unlocking the base holder 7509. Further, the vertical movement of the chucking portion 7511 is performed by an air cylinder (not shown).

In each apparatus, a heating container 7202, a reaction container 7302, a cooling and discharging container 7402, and a transport container 7502 are exhaust pumps 7205, 7305, 7405, 7505 for exhausting the inside of the container to a vacuum, exhaust valves 7203, 7303, 7403, 7503 is installed. Each container 7202, 7302, 7402, 7502 is provided with connectable open / close gates 7201, 7301, 7401, 7501.
In addition, a base holder 7509 equipped with a cylindrical base 7508 and an auxiliary base 7510 can be installed in the charging container 7102 with the open / close gate 7101 installed and the inside of the container in an atmospheric state. The heating container 7202 is provided with a valve 7204 for allowing a gas to be used at the time of heating to flow, and the cooling and discharging container 7402 is provided with a leak valve 7404 for returning the inside of the container to the atmosphere. The reaction vessel 7302 is connected to reaction gas outlet valves 7304 and 7306, a high-frequency matching box, and a high-frequency power source (not shown). The transfer container 7502 is provided with an exhaust valve 7503 for exhausting the inside of the container to a vacuum, an exhaust valve 7512 for exhausting the space between the gates to a vacuum, and a leak valve 7504 for returning the space between the gates to atmospheric pressure. . Further, the transport container 7502 is provided with a chucking portion 7511 and a moving rail 7506 for holding and moving a substrate holder 7509 mounted with a cylindrical substrate 7508 and an auxiliary substrate 7510. The number of input containers 7102, heating containers 7202, reaction containers 7302, cooling and extraction containers 7402 is selected in accordance with the processing time. A plurality of transfer containers 7502 can be provided so that a plurality of substrates can be transferred simultaneously. Further, the transfer device 7500 can be moved in a linear movement system or in a circumferential direction.

Such an electrophotographic photosensitive member forming apparatus is used as follows, for example.
After the operator installs the substrate holder 7509 on which the cylindrical substrate 7508 and the auxiliary substrate 7510 are mounted in the charging container 7102, the transport container 7502 dedicated for automatic transport moves onto the charging container 7102. Thereafter, the transfer container 7502 is further lowered, and the transfer container opening / closing gate 7501 is connected to the opening / closing gate 7101.

  Both the open / close gates are opened, and the base holder 7509 mounted with the cylindrical base body 7508 and the auxiliary base body 7510 is installed in the transport container 7502 by the chucking portion 7511. To rise. In this state, the inside of the transfer container 7502 is evacuated from the lower side of the transfer container 7502 by the exhaust pump 7505 and the exhaust valve 7503 and is exhausted from atmospheric pressure to a predetermined vacuum level. When a predetermined degree of vacuum is reached, the transfer container 7502 is transferred to a heating container 7202 that is previously held in vacuum by an exhaust valve 7203 and an exhaust pump 7205.

Thereafter, the substrate holder 7509 to which the cylindrical substrate 7508 and the auxiliary substrate 7510 are attached is transferred in the order of the heating container 7202 and the reaction container 7302 by a method described later. In the heating container 7202, the cylindrical substrate 7508 is heated to a predetermined temperature, and in the reaction container 7302, a deposited film is formed on the cylindrical substrate 7202 by a predetermined means.
Thereafter, the substrate holder 7509 is transferred to the cooling and discharging container 7402, which has been previously held in vacuum by the exhaust valve 7403 and the exhaust pump 7405, and the cylindrical base 7508 and the auxiliary base 7510 are mounted by the method described later. Installed inside. A substrate holder 7509 mounted with a cylindrical substrate 7508 and an auxiliary substrate 7510 is cooled in a cooling and discharge container 7402 until a predetermined temperature is reached. Thereafter, a leakage gas is allowed to flow from the leak valve 7404 until the inside of the cooling and discharge container 7402 reaches atmospheric pressure, and then the substrate holder 7509 equipped with the cylindrical substrate 7508 and the auxiliary substrate 7510 is discharged.

A method of installing a substrate holder 7509 mounted with a cylindrical substrate 7508 and an auxiliary substrate 7510 from a transfer container 7502 to a heating container 7202, a reaction container 7302, and a cooling and discharge container 7402 is as follows. Move to. Then, the transfer container opening / closing gate 7501 is connected to one of predetermined opening / closing gates 7201, 7301, 7401.
Thereafter, the exhaust pump 7505 and the exhaust valve 7512 are evacuated between the transfer container opening / closing gate 7501 and the predetermined opening / closing gates 7201, 7301, 7401. If the inside of the transfer container 7502 is not at a predetermined degree of vacuum, the exhaust valve 7503 is evacuated.

  When the predetermined vacuum degree is reached between the transfer container opening / closing gate 7501 and the predetermined opening / closing gates 7201, 7301, 7401, both opening / closing gates are opened. Then, the chucking portion 7511 descends and the base holder 7509 mounted with the cylindrical base 7508 and the auxiliary base 7510 is placed on a cradle (not shown). Thereafter, the holding portion 7507 is unlocked, the chucking portion 7511 is raised and stored in the transfer container 7502, and both opening / closing gates are closed. Thereafter, a leakage gas is allowed to flow from the leak valve 7504 to bring the pressure between the transfer container opening / closing gate 7501 and the predetermined opening / closing gates 7201, 7301, 7401 to atmospheric pressure. Thereafter, the transfer container opening / closing gate 7501 is disconnected from the predetermined opening / closing gates 7201, 7301, 7401.

All these processes are performed by automatic control.
When carrying out the above-described conveyance, the configuration of the chucking portion 7511 is such that the screw and spring do not protrude from the upper portion of the substrate holder 302 as shown in FIG. Can be simplified, which is preferable.

Next, a method and an apparatus for forming a deposited film on an electrophotographic photoreceptor will be described in more detail with reference to the schematic configuration diagram of the plasma CVD apparatus in FIG.
This apparatus is roughly divided into a deposition apparatus 8100 having a reaction vessel 8110 that can be vacuum-tight and depressurized, a source gas supply apparatus 8200, and an exhaust device (not shown) for depressurizing the inside of the reaction container 8110. Has been. A cradle 8117 in the reaction vessel 8110 is provided with a substrate holder 8112 on which a cylindrical substrate 8111 and an auxiliary substrate 8113 are mounted. Since the cradle 8117 is provided on the lower wall 8118 that is grounded, the cradle 8117 is grounded similarly to the lower wall 8118. Further, a conductive rod 8120 is attached to the upper wall 8119 that also serves as a gate valve connected to the ground, and one end of the rod 8120 is pressed against the upper end of the substrate holder 8112. Thus, the base holder 8112 is grounded at the upper and lower ends.

  A spring 8116 is provided between the auxiliary base 8113 and the base holder 8112, and a pressing plate 8115 is provided above the spring 8116. When the spring 8116 is pressed by the pressing plate 8115 and the pressing plate 8115 is fitted to the base holder 8112, the spring 8116 is accumulated in the longitudinal direction of the cylindrical base 8111 by the pressing plate 8115 and the auxiliary base 8113. It becomes. Thus, the auxiliary base 8113 is pressed against the cylindrical base 8111. Therefore, the cylindrical base 8111 is in sufficient contact with the auxiliary base 8113 over the entire circumference without any gap, and sufficient conduction with respect to high-frequency power is ensured at the connection portion between the cylindrical base 8111 and the auxiliary base 8113. As a result, the uniformity of the potential seen from the plasma from the cylindrical substrate 8111 to the auxiliary substrate 8113 is sufficiently ensured.

In addition, in the connecting portion between the cylindrical base 8111 and the base holder 8112, the discontinuity of the ground plane for high-frequency power is reduced as described above.
A substrate heating heater 8114 is installed in the substrate holder 8112. In addition, a source gas introduction pipe 8121 is installed in the reaction vessel 8110. Further, a high frequency power source 8124 is connected to an electrode 8122 disposed so as to surround the cylindrical base 8111 via a high frequency matching box 8123.

The source gas supply device 8200 includes source gas cylinders 8221 to 8225, valves 8231 to 8235, pressure regulators 8261 to 8265, inflow valves 8241 to 8245, outflow valves 8251 to 8255, and mass flow controllers 8211 to 8215. The source gas is, for example, SiH ₄ , H ₂ , CH ₄ , NO, B ₂ H ₆ . The source gas supply device 8200 is connected to a source gas introduction pipe 8121 in the reaction vessel 8110 via an auxiliary valve 8260.
An unillustrated exhaust device is composed of, for example, a mechanical booster pump or a rotary pump.

  Next, a method for forming a deposited film using this apparatus will be described. First, the cylindrical substrate 8111 that has been degreased and washed in advance is set as described above, and is installed on the cradle 8117 in the reaction vessel 8110 using the transfer device described in FIG. The inside of the reaction vessel 8110 is previously held in vacuum by an exhaust valve and an exhaust pump (not shown). In addition, power is supplied to the substrate heating heater 8114 in advance, and the cylindrical substrate 8111 heated in the heating furnace is heated so as to be maintained at a desired temperature of, for example, 50 ° C. to 350 ° C. At this time, an inert gas such as Ar or He can be supplied from the gas supply device 8200 to the reaction vessel 8110 and heated in an inert gas atmosphere.

  Next, a gas used to form a deposited film is supplied from the gas supply device 8200 to the reaction vessel 8110. That is, the auxiliary valve 8260 is opened, and the valves 8231 to 8235, the inflow valves 8241 to 8245, and the outflow valves 8251 to 8255 are opened as necessary to set the flow rate of the mass flow controllers 8211 to 8215. When the flow rate of each of the mass flow controllers 8211 to 8215 is stabilized, the main valve 8126 is operated while viewing the display of the vacuum gauge 8125 to adjust the pressure in the reaction vessel 8110 to a desired pressure. In order to adjust the pressure in the reaction vessel 8110, for example, the rotational speed of a mechanical booster pump or the opening degree of the main valve 8126 can be controlled.

When a desired pressure is obtained, high-frequency power is applied from the high-frequency power source 8124, and at the same time, the high-frequency matching box 8123 is operated to generate plasma discharge in the reaction vessel 8110. The gas used for forming the deposited film is excited by high frequency power. Thereafter, the high frequency power is quickly adjusted to a desired power, and a deposited film is formed.
When the formation of the predetermined deposited film is finished, the application of the high frequency power is stopped, the valves 8231 to 8235, the inflow valves 8241 to 8245, the outflow valves 8251 to 8255, and the auxiliary valve 8260 are closed, and the supply of the raw material gas is finished. At the same time, the main valve 8126 is fully opened and the reaction vessel 8110 is evacuated to a pressure of 1 Pa or less.
The formation of the deposited layers is completed as described above. When a plurality of deposited layers are formed, the above procedure is repeated again to form each layer. After all the deposited films are formed, the main valve 8126 is closed, and the cylindrical substrate 8111 is taken out using the transfer device described with reference to FIG.

EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited at all by these.
[Example 1]
Using the deposited film forming apparatus shown in FIG. 8, on the cylindrical substrate having an outer diameter of 84 mm, a length of 381 mm, and a thickness of 3 mm made of an Al—Mg alloy 5052, the layers shown in FIG. 9 under the conditions shown in Table 1. An electrophotographic photosensitive member made of amorphous silicon having a structure was formed.

In FIG. 9, reference numeral 901 denotes a cylindrical substrate, 902 denotes a lower blocking layer, 903 denotes a photoconductive layer, 904 denotes an upper blocking layer, and 905 denotes a surface layer.
In this embodiment, the cylindrical base body installation method and pressurizing means are configured as shown in FIG.
In this embodiment, the auxiliary base 103 has an outer diameter of 84 mm. The material of the base holder 102 and the auxiliary base 103 was Al-Mg alloy 5052.
In this embodiment, the material of the screw 105 is SUS304. Four screws 105 were installed at intervals of 90 degrees in the circumferential direction of the auxiliary base 103.

Further, a spring 106 as an elastic member is provided between the screw 105 and the auxiliary base 103. The material of the spring 106 was SUS304.
A pressure measurement film (manufactured by Fujifilm, prescale: registered trademark) is sandwiched between the auxiliary substrate 103 and the cylindrical substrate 101, and the cylindrical substrate 101 is pressed in advance by the tightening torque of the screw 105 and the auxiliary substrate 103. The pressure relationship was measured. Then, the tightening torque of the screw 105 was adjusted, and the pressure at which the cylindrical substrate 101 was pressed by the auxiliary substrate 103 was set to 300 kgf / cm ² .

The produced electrophotographic photosensitive member was placed in a copying machine in which iRC6800 manufactured by Canon was modified to reverse development by negative charging, and Vd unevenness in the end region of the electrophotographic photosensitive member was evaluated.
(Uneven end region Vd)
The electrophotographic photosensitive member was charged under the condition that the current value of the main charger was −1000 μA. At this time, the surface potential of the dark part of the electrophotographic photosensitive member is measured with a surface potential meter. The dark portion surface potential is measured every 2 cm in the axial direction and every 36 ° in the circumferential direction in an area 10 cm from the end of the auxiliary substrate side of the electrophotographic photosensitive member, and the maximum and minimum values of the dark portion surface potential at each position obtained are measured. The potential difference of the values was evaluated as the end region Vd unevenness. Evaluation was carried out by relative evaluation when the result obtained in Comparative Example 1 described later was taken as 100. In other words, the smaller the number, the better the evaluation result.

And ranking was performed according to the following criteria.
It is considered that the effect of the present invention is obtained at rank B or higher.
AA ... 30 or more and less than 50 A ... 50 or more and less than 70 B ... 70 or more and less than 90 C ... 90 or more and less than 110 D ... 110 or more Evaluation results are shown in Table 2.

[Example 2]
In this example, an electrophotographic photosensitive member was formed in the same manner as in Example 1 except that the installation method of the cylindrical substrate and the pressing means were configured as shown in FIG.
After setting the substrate holder 202 with the cylindrical substrate 201 and the auxiliary substrate 203 mounted on the cradle 207 in the reaction vessel, the upper wall 205 to which the holding plate 206 was connected via the spring 209 was set. In this way, the auxiliary base 203 is pressed in the longitudinal direction of the cylindrical base 201 by the spring 209 and the presser plate 206.

Considering the pressurization due to the weight of the holding plate 206 and the auxiliary base 203, the spring having the optimum spring constant was selected from springs having different spring constants, and the pushing length of the spring 209 was adjusted. The pressure at which the cylindrical substrate 201 was pressed by the auxiliary substrate 203 was set to 300 kgf / cm ² .
The material of the spring 209 and the presser plate 206 is SUS304.
In this example, the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 2.

Example 3
As shown in FIG. 6, the electrophotographic photosensitive member is formed in the same manner as in Example 1 except that the auxiliary base 603 is pressed with screws 604 without providing an elastic member and the material of the auxiliary base 603 is SUS304. Went.
The tightening torque of the screw 604 was adjusted, and the pressure at which the cylindrical substrate 601 was pressed by the auxiliary substrate 603 was set to 300 kgf / cm ² .
In this example, the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 2.

[Comparative Example 1]
An electrophotographic photosensitive member was formed in the same manner as in Example 1 except that the cylindrical substrate was installed as shown in FIG.
In this comparative example, the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 2.

[Comparative Example 2]
An electrophotographic photosensitive member was formed in the same manner as in Example 1 except that the cylindrical substrate was installed as shown in FIG.
In this comparative example, four presser claws 505 are installed at intervals of 90 degrees in the circumferential direction of the auxiliary base 503. SUS304 was used for the material of the presser claw 505 and the screw 506.
With the presser claw 505 and the screw 506 installed, the length from the auxiliary base 503 to the top of the screw 506 (A shown in FIG. 5B) is 5 mm, and the length of the presser claw 505 (FIG. 5B). B) shown in FIG.
In this comparative example, the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 2.

[Comparative Example 3]
An electrophotographic photosensitive member was formed in the same manner as in Example 1 except that the cylindrical substrate was installed in the configuration shown in FIG.
In this comparative example, four leaf springs 507 were installed at intervals of 90 degrees in the circumferential direction of the auxiliary base 503. The material of the leaf spring 507 was SUS304.
In this comparative example, the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 2.

表２から、本発明による各実施例は端部領域Ｖｄムラが改善されており、本発明の効果が明らかになった

From Table 2, each embodiment according to the present invention has improved end region Vd unevenness, and the effects of the present invention became clear.

[Examples 4 to 9]
The electrophotographic photosensitive member is the same as in Example 1 except that the pressure at which the cylindrical substrate 101 is pressed by the auxiliary substrate 103 is changed as shown in Table 3 by changing the tightening torque of the screw 105 shown in FIG. The body was formed.
In this example, the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 3.

表３から、補助基体によって円筒状基体が押圧されている圧力を５０ｋｇｆ/ｃｍ²以上、９００ｋｇｆ/ｃｍ²以下、さらには１００ｋｇｆ/ｃｍ²以上、５００ｋｇｆ/ｃｍ²以下にすることで、端部領域Ｖｄムラが改善されており、本発明の効果が明らかになった。

From Table 3, the pressure cylindrical substrate by an auxiliary substrate is pressed 50 kgf / cm ² or more, 900 kgf / cm ² or less, further 100 kgf / cm ² or more, by the following 500 kgf / cm ^2, the end regions Vd unevenness was improved, and the effect of the present invention became clear.

Example 10
The cylindrical base body 7508 and the auxiliary base body are set in accordance with the above-described procedure using the electrophotographic photosensitive member forming apparatus shown in FIG. The substrate holder 7509 mounted with 7510 was transported. Then, an electrophotographic photosensitive member was formed in the same manner as in Example 1 except that a substrate holder 7509 mounted with a cylindrical substrate 7508 and an auxiliary substrate 7510 was installed in the reaction vessel 7302.

In this embodiment, SUS304 is used as the material of the pressing plate 305. As the spring 304, a nickel-chromium alloy (special metal, Inconel: registered trademark) was used.
Further, the claw 306 provided on the inner peripheral surface of the pressing plate 305 and the grooves 307 formed in the base holder 302 are provided at four locations at intervals of 90 degrees in the circumferential direction. Further, as shown in FIG. 3D, the shape of the groove 307 formed in the substrate holder 302 is a groove 307a formed in the longitudinal direction from the upper end portion of the substrate holder 302 and a circumferential direction extending from the groove formed in the longitudinal direction. The formed groove 307b was used.

The spring 304 is a single spring that surrounds the base holder 302.
Considering the pressurization due to the self-weight of the auxiliary base 303, selecting an optimal spring constant from springs having different spring constants, and further changing the length of the groove 307a formed in the base holder 302, The pushing length of the spring 304 was adjusted. The pressure at which the cylindrical substrate 301 was pressed by the auxiliary substrate 303 was 300 kgf / cm ² .
In this example, the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 4.

表４から、本発明による実施例は端部領域Ｖｄムラが改善されており、本発明の効果が明らかになった。

From Table 4, the end region Vd unevenness was improved in the examples according to the present invention, and the effects of the present invention became clear.

101 ... Cylindrical substrate 102 ... Substrate holder 103 ... Auxiliary substrate 104 ... Substrate heating heater 105 ... Screw 106 ... Spring 107 ... Pedestal 108 ... Lower wall 109 ... Upper wall 110 ... Bar shape body

Claims (7)

A cylindrical substrate and an auxiliary substrate are installed in this order on a substrate holder, and the substrate holder on which the cylindrical substrate and the auxiliary substrate are mounted is installed on a pedestal connected to the ground in a depressurizable reaction vessel, and the reaction Formation of an electrophotographic photosensitive member for forming a deposited film on the cylindrical substrate by introducing a source gas into the container and applying high frequency power to an electrode installed so as to surround the cylindrical substrate. In the method
A method of forming an electrophotographic photosensitive member, wherein the auxiliary substrate is pressed in a longitudinal direction of the cylindrical substrate by a pressing means, and the deposited film is formed in a state where the auxiliary substrate is pressed against the cylindrical substrate. . The pressure the cylindrical substrate by the auxiliary base is pressed 50 kgf / cm ² or more, the method of forming the electrophotographic photosensitive member according to claim 1, characterized in that a 900 kgf / cm ² or less.   The method of forming an electrophotographic photosensitive member according to claim 1, wherein the pressurizing unit pressurizes the auxiliary substrate with a screw or an elastic member. A pressure-reducible reaction vessel, a grounded cradle for installing a cylindrical substrate holding device holding a cylindrical substrate, means for supplying a raw material gas into the reaction vessel, and exhausting the reaction vessel In an apparatus for forming an electrophotographic photosensitive member by a plasma CVD method, comprising: a means for exciting the source gas with high-frequency power;
The cylindrical substrate holding device includes a substrate holder that passes through the cylindrical substrate and holds the lower end of the cylindrical substrate, an auxiliary substrate installed on the upper portion of the cylindrical substrate, and is fitted and fixed to the substrate holder. A pressure plate that is pressed by the auxiliary substrate and the pressing plate in a space formed by the substrate holder, the auxiliary substrate, and the pressing plate, thereby accumulating in the longitudinal direction of the cylindrical substrate. An apparatus for forming an electrophotographic photosensitive member, comprising a spring that is biased.   5. The electrophotographic photosensitive member forming apparatus according to claim 4, wherein the pressing plate has a claw on an inner peripheral surface, and the base holder has a groove into which the claw can be fitted and fixed.   6. The electrophotographic photosensitive member forming apparatus according to claim 5, wherein the claw and the groove are formed at two or more locations in the circumferential direction.   7. The transport device according to claim 4, further comprising a transport unit configured to transport the cylindrical substrate holding device that holds the cylindrical substrate on the cradle in the reaction vessel. 8. An apparatus for forming an electrophotographic photosensitive member.

Images