JP2011242473A - Method for forming light-shielding pattern - Google Patents
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Abstract
Description
本発明は、ピンホール板や回折格子その他の光学機器に使用される遮光パターンの形成方法に関するものである。 The present invention relates to a method for forming a light shielding pattern used in a pinhole plate, a diffraction grating, or other optical equipment.
従来、このような遮光パターンの形成方法としては、透明基板の上にレジスト膜を形成する工程と、前記レジスト膜をパターニングする工程と、前記パターニングの結果残った前記レジスト膜をマスクとして、前記透明基板をエッチングする工程と、前記エッチングの結果残った前記レジスト膜と前記透明基板の表面に、前記エッチングの結果、前記透明基板が減厚された厚さと同じ厚さの遮光膜を形成する工程と、前記レジスト膜を溶解し、前記レジスト膜とその上に成膜された前記遮光膜を除去する工程とを有する手法（以下、公知技術１という。）が提案されていた（例えば、特許文献１参照）。 Conventionally, as a method for forming such a light-shielding pattern, a step of forming a resist film on a transparent substrate, a step of patterning the resist film, and using the resist film remaining as a result of the patterning as a mask, the transparent film Etching the substrate, and forming a light-shielding film having the same thickness as the reduced thickness of the transparent substrate as a result of the etching on the surface of the resist film and the transparent substrate remaining as a result of the etching; There has been proposed a technique (hereinafter referred to as well-known technique 1) including a step of dissolving the resist film and removing the resist film and the light shielding film formed thereon (for example, Patent Document 1). reference).
なお、本明細書において、「透明基板」とは、使用される波長に対して透明な基板を意味する。 In the present specification, the “transparent substrate” means a substrate transparent to the wavelength used.
しかしながら、公知技術１では、透明基板をエッチングした後、この透明基板上にレジスト膜の残滓などの塵埃（ごみ、異物）が付着する場合がある。この場合、この透明基板の上側にそのまま遮光膜を成膜すると、この塵埃に起因して遮光膜に小さいピンホールが余計にできてしまい、遮光膜として十全に機能しなくなる不具合があった。 However, in the known technique 1, after etching a transparent substrate, dust (dust, foreign matter) such as a resist film residue may adhere to the transparent substrate. In this case, if the light shielding film is formed on the transparent substrate as it is, an extra small pinhole is formed in the light shielding film due to the dust, and there is a problem that the light shielding film does not function sufficiently.
こうした不具合を避けるべく、遮光膜を成膜する前に、エッチング済みの透明基板の表面を洗浄する対処法も考えられる。しかし、これでは、透明基板の洗浄に伴い、透明基板上に残っているレジスト膜が損傷を受け、それ以降の工程に支障を来す恐れがある点で、実用性に乏しい対処法と言わざるを得ない。 In order to avoid such a problem, a method of cleaning the surface of the etched transparent substrate before forming the light shielding film is also conceivable. However, in this case, the resist film remaining on the transparent substrate may be damaged with the cleaning of the transparent substrate, which may impair the subsequent processes. I do not get.
本発明は、このような事情に鑑み、透明基板をエッチングした後、この透明基板上に塵埃が付着した場合であっても、遮光膜としての機能を十全に発揮させることが可能な遮光パターンの形成方法を提供することを目的とする。 In view of such circumstances, the present invention provides a light-shielding pattern that can fully function as a light-shielding film even when dust adheres to the transparent substrate after etching the transparent substrate. It aims at providing the formation method of this.
本発明に係る第１の遮光パターンの形成方法は、透明基板（１）の表面にレジスト膜（２）を形成するレジスト成膜工程と、前記レジスト膜をパターニングするパターニング工程と、前記透明基板上に残っている前記レジスト膜をマスクとして前記透明基板をエッチングすることにより、当該透明基板に凸部（１ａ）を形成する基板エッチング工程と、前記凸部上に残っている前記レジスト膜を除去するレジスト除去工程と、前記透明基板の表面を洗浄する基板洗浄工程と、前記透明基板の表面に遮光膜（４）を形成する遮光膜形成工程と、少なくとも前記遮光膜を研磨することにより、前記凸部が露出した状態で前記遮光膜および前記凸部を平坦にする研磨工程とが含まれる遮光パターンの形成方法としたことを特徴とする。 The first light-shielding pattern forming method according to the present invention includes: a resist film forming step for forming a resist film (2) on the surface of a transparent substrate (1); a patterning step for patterning the resist film; Etching the transparent substrate using the resist film remaining on the mask as a mask, a substrate etching step for forming a convex portion (1a) on the transparent substrate, and removing the resist film remaining on the convex portion A resist removing step, a substrate cleaning step for cleaning the surface of the transparent substrate, a light shielding film forming step for forming a light shielding film (4) on the surface of the transparent substrate, and polishing the at least the light shielding film, The light shielding pattern forming method includes a polishing step of flattening the light shielding film and the convex portion with the portion exposed.
本発明に係る第２の遮光パターンの形成方法は、透明基板（１）の表面にレジスト膜（２）を形成するレジスト成膜工程と、前記レジスト膜をパターニングするパターニング工程と、前記透明基板上に残っている前記レジスト膜をマスクとして前記透明基板をエッチングすることにより、当該透明基板に凸部（１ａ）を形成する基板エッチング工程と、前記凸部上に残っている前記レジスト膜を除去するレジスト除去工程と、前記透明基板の表面を洗浄する基板洗浄工程と、前記透明基板の表面に密着層（３）を形成する密着層形成工程と、前記密着層の上側に遮光膜（４）を形成する遮光膜形成工程と、少なくとも前記遮光膜および前記密着層を研磨することにより、前記凸部が露出した状態で前記遮光膜および前記凸部を平坦にする研磨工程とが含まれる遮光パターンの形成方法としたことを特徴とする。 The second light-shielding pattern forming method according to the present invention includes a resist film forming step for forming a resist film (2) on the surface of a transparent substrate (1), a patterning step for patterning the resist film, and on the transparent substrate. Etching the transparent substrate using the resist film remaining on the mask as a mask, a substrate etching step for forming a convex portion (1a) on the transparent substrate, and removing the resist film remaining on the convex portion A resist removing step, a substrate cleaning step for cleaning the surface of the transparent substrate, an adhesion layer forming step for forming an adhesion layer (3) on the surface of the transparent substrate, and a light shielding film (4) on the adhesion layer. A light-shielding film forming step to be formed, and polishing to flatten the light-shielding film and the protrusions with the protrusions exposed by polishing at least the light-shielding film and the adhesion layer And characterized in that a method of forming a light-shielding pattern that contains the extent.
なお、ここでは、本発明をわかりやすく説明するため、実施の形態を表す図面の符号に対応づけて説明したが、本発明が実施の形態に限定されるものでないことは言及するまでもない。 Here, in order to explain the present invention in an easy-to-understand manner, the description has been made in association with the reference numerals of the drawings representing the embodiments. However, it goes without saying that the present invention is not limited to the embodiments.
本発明によれば、透明基板上のレジスト膜が完全に除去された状態で透明基板の表面が洗浄された後、この透明基板上に直接または密着層を介して遮光膜が形成される。したがって、透明基板をエッチングした後、この透明基板上に塵埃が付着した場合であっても、遮光膜としての機能を十全に発揮させることが可能となる。 According to the present invention, after the surface of the transparent substrate is washed in a state where the resist film on the transparent substrate is completely removed, the light shielding film is formed on the transparent substrate directly or via the adhesion layer. Therefore, even if dust adheres to the transparent substrate after etching the transparent substrate, the function as a light shielding film can be fully exhibited.
以下、本発明の実施の形態について説明する。
［発明の実施の形態１］
Embodiments of the present invention will be described below.
Embodiment 1 of the Invention
図１は、本発明の実施の形態１に係る図である。なお、図１においては、わかりやすさを重視して図示しているため、各構成要素の寸法比率は必ずしも正確ではない。 FIG. 1 is a diagram according to Embodiment 1 of the present invention. In FIG. 1, the dimensional ratio of each component is not necessarily accurate because it is illustrated with emphasis on ease of understanding.
この実施の形態１に係る遮光パターンの形成方法は、次の手順で行われる。 The light shielding pattern forming method according to the first embodiment is performed in the following procedure.
まず、基板準備工程で、図１（ａ）に示すように、石英からなる透明基板１を準備する。 First, in the substrate preparation step, a transparent substrate 1 made of quartz is prepared as shown in FIG.
次に、レジスト成膜工程に移行し、図１（ｂ）に示すように、この透明基板１の表面（図１上面）に樹脂製のレジストを塗布してレジスト膜２を形成する。 Next, the process proceeds to a resist film forming process, and a resist film 2 is formed by applying a resin resist to the surface (upper surface in FIG. 1) of the transparent substrate 1 as shown in FIG.
次いで、パターニング工程に移行し、図１（ｃ）に示すように、フォトリソグラフィにより、このレジスト膜２をパターニングする。すると、透明基板１上のレジスト膜２のうち、遮光部に対応する部分が除去され、ピンホールに対応する円板状の部分が残る。 Next, the process proceeds to a patterning step, and as shown in FIG. 1C, the resist film 2 is patterned by photolithography. Then, a portion corresponding to the light shielding portion is removed from the resist film 2 on the transparent substrate 1, and a disc-shaped portion corresponding to the pinhole remains.
その後、基板エッチング工程に移行し、図１（ｄ）に示すように、反応性イオンエッチング（ＲＩＥ）などのドライエッチングにより、透明基板１上に残っているレジスト膜２をマスクとして、透明基板１をエッチングする。すると、所定の直径Ｄ１（例えば、Ｄ１＝１０μｍ）および高さＨ１（例えば、Ｈ１＝１５０ｎｍ）を有する円柱状の凸部１ａが透明基板１に形成される。 Thereafter, the process proceeds to a substrate etching process, and as shown in FIG. 1D, the transparent substrate 1 is masked with the resist film 2 remaining on the transparent substrate 1 by dry etching such as reactive ion etching (RIE). Etch. Then, the columnar convex portion 1a having a predetermined diameter D1 (for example, D1 = 10 μm) and a height H1 (for example, H1 = 150 nm) is formed on the transparent substrate 1.
次に、レジスト除去工程に移行し、図１（ｅ）に示すように、透明基板１の凸部１ａ上に残っているレジスト膜２を溶解して除去する。これで、透明基板１上に形成されたレジスト膜２は、遮光部に対応する部分もピンホールに対応する部分も、すべて除去された状態となる。 Next, the process proceeds to a resist removal step, and the resist film 2 remaining on the convex portion 1a of the transparent substrate 1 is dissolved and removed as shown in FIG. Thus, the resist film 2 formed on the transparent substrate 1 is in a state in which both the portion corresponding to the light shielding portion and the portion corresponding to the pinhole are removed.
この状態で、基板洗浄工程に移行し、透明基板１の表面（つまり、レジスト膜２が形成されていた面）を化学洗浄する。こうすることにより、たとえ透明基板１の表面にレジスト膜２の残滓などの塵埃が付着していたとしても、この塵埃を透明基板１の表面から払拭することができる。また、このとき透明基板１上には既にレジスト膜２が存在していないので、透明基板１の化学洗浄を行っても、それ以降の工程に支障を来す恐れはない。 In this state, the process proceeds to the substrate cleaning step, and the surface of the transparent substrate 1 (that is, the surface on which the resist film 2 is formed) is chemically cleaned. By doing so, even if dust such as residue of the resist film 2 is adhered to the surface of the transparent substrate 1, this dust can be wiped off from the surface of the transparent substrate 1. At this time, since the resist film 2 does not already exist on the transparent substrate 1, even if the transparent substrate 1 is chemically cleaned, there is no possibility of hindering subsequent processes.
その後、密着層形成工程に移行し、図１（ｆ）に示すように、透明基板１の表面に、所定の厚さＴ１（例えば、Ｔ１＝２０ｎｍ）を有する酸化クロム（Ｃｒ2 Ｏ3 ）からなる密着層３を形成する。 Thereafter, the process proceeds to an adhesion layer forming step. As shown in FIG. 1 (f), the surface of the transparent substrate 1 is made of chromium oxide (Cr 2 O 3 ) having a predetermined thickness T1 (for example, T1 = 20 nm). The adhesion layer 3 is formed.
次に、遮光膜形成工程に移行し、図１（ｇ）に示すように、この密着層３の上側に、所定の厚さＴ２（例えば、Ｔ２＝２００ｎｍ）を有する白金（Ｐｔ）からなる遮光膜４を成膜する。これで、透明基板１上に密着層３を介して遮光膜４が密着した状態となる。 Next, the process proceeds to a light shielding film forming step, and as shown in FIG. 1 (g), light shielding made of platinum (Pt) having a predetermined thickness T2 (for example, T2 = 200 nm) is formed on the upper side of the adhesion layer 3. A film 4 is formed. As a result, the light shielding film 4 is in close contact with the transparent substrate 1 via the adhesive layer 3.
このとき、遮光膜４の厚さＴ２は、透明基板１の凸部１ａの高さＨ１から密着層３の厚さＴ１を減じた値より大きくする（Ｔ２＞Ｈ１−Ｔ１）。その結果、この遮光膜４の上面の高さは、遮光部に対応する部分において、透明基板１の凸部１ａの上面より高くなる。 At this time, the thickness T2 of the light shielding film 4 is set larger than the value obtained by subtracting the thickness T1 of the adhesion layer 3 from the height H1 of the convex portion 1a of the transparent substrate 1 (T2> H1-T1). As a result, the height of the upper surface of the light shielding film 4 is higher than the upper surface of the convex portion 1a of the transparent substrate 1 in the portion corresponding to the light shielding portion.
その後、研磨工程に移行し、図１（ｈ）に示すように、化学機械研磨（ＣＭＰ）により、まず遮光膜４を平坦に研磨する。この研磨作業は、ピンホールに対応する部分の遮光膜４が残らず除去されて、透明基板１の凸部１ａ上の密着層３が露出するまで行う。 Thereafter, the process proceeds to a polishing step, and the light shielding film 4 is first polished flat by chemical mechanical polishing (CMP) as shown in FIG. This polishing operation is performed until the light shielding film 4 corresponding to the pinhole is completely removed and the adhesion layer 3 on the convex portion 1a of the transparent substrate 1 is exposed.
引き続き、図１（ｉ）に示すように、化学機械研磨により、透明基板１の凸部１ａ上の密着層３および遮光部に対応する部分の遮光膜４を同時に平坦に研磨した後、透明基板１の凸部１ａおよび遮光部に対応する部分の遮光膜４を同時に平坦に研磨する。この研磨作業は、透明基板１の凸部１ａ上の密着層３が残らず除去されて、透明基板１の凸部１ａが露出するまで行う。 Subsequently, as shown in FIG. 1I, the adhesion layer 3 on the convex portion 1a of the transparent substrate 1 and the portion of the light shielding film 4 corresponding to the light shielding portion are simultaneously and flatly polished by chemical mechanical polishing, A portion of the light-shielding film 4 corresponding to the convex portion 1a and the light-shielding portion is simultaneously polished flatly. This polishing operation is performed until the adhesion layer 3 on the convex portion 1a of the transparent substrate 1 is completely removed and the convex portion 1a of the transparent substrate 1 is exposed.
すると、これらの研磨により、透明基板１の凸部１ａが露出した状態で遮光膜４および透明基板１の凸部１ａが平坦になる。 Then, by the polishing, the light shielding film 4 and the convex portion 1a of the transparent substrate 1 become flat with the convex portion 1a of the transparent substrate 1 exposed.
なお、透明基板１、密着層３および遮光膜４は、それぞれ材質が異なり、この順で研磨レート（単位時間当たりの研磨量）が低下する。そのため、この研磨工程が終了した時点で、透明基板１の凸部１ａの露出面１ｂが少し凹んで段差が生じる可能性がある。しかし、透明基板１、密着層３および遮光膜４の研磨に用いる研磨剤の選択を最適化することにより、或いは、透明基板１、密着層３および遮光膜４の実際の研磨量をフィードバックして研磨条件を適宜制御することにより、この露出面１ｂの凹み量を僅少（例えば、２０ｎｍ以下）に抑えて、段差がほとんどない平坦な露出面１ｂを形成することができる。その結果、透明基板１の凸部１ａの露出面１ｂ上に塵埃が溜まる事態の発生を未然に防止することが可能となる。 The transparent substrate 1, the adhesion layer 3, and the light shielding film 4 are different in material, and the polishing rate (polishing amount per unit time) decreases in this order. Therefore, when this polishing process is completed, there is a possibility that the exposed surface 1b of the convex portion 1a of the transparent substrate 1 is slightly recessed and a step is generated. However, by optimizing the selection of the abrasive used for polishing the transparent substrate 1, the adhesion layer 3 and the light shielding film 4, or by feeding back the actual polishing amount of the transparent substrate 1, the adhesion layer 3 and the light shielding film 4. By appropriately controlling the polishing conditions, it is possible to form a flat exposed surface 1b having almost no step by suppressing the amount of depression of the exposed surface 1b to a small amount (for example, 20 nm or less). As a result, it is possible to prevent the occurrence of a situation where dust accumulates on the exposed surface 1b of the convex portion 1a of the transparent substrate 1.
ここで、遮光パターンの形成方法が終了し、表面が平坦な遮光パターンが形成される。 Here, the light shielding pattern forming method is completed, and a light shielding pattern having a flat surface is formed.
このように、この実施の形態１に係る遮光パターンの形成方法では、透明基板１上のレジスト膜２が完全に除去された状態で透明基板１の表面が化学洗浄された後、この透明基板１上に密着層３を介して遮光膜４が形成される。したがって、透明基板１をエッチングした後、この透明基板１上にレジスト膜２の残滓などの塵埃が付着した場合であっても、遮光膜４を成膜する前に、この塵埃を除去することができる。その結果、レジスト膜２の塵埃に起因して遮光膜４に小さいピンホールが生じることを阻止し、遮光膜４としての機能を十全に発揮させることが可能となる。 Thus, in the light shielding pattern forming method according to the first embodiment, the surface of the transparent substrate 1 is chemically cleaned in a state where the resist film 2 on the transparent substrate 1 is completely removed, and then the transparent substrate 1 A light shielding film 4 is formed thereon with an adhesion layer 3 interposed therebetween. Therefore, even if dust such as residue of the resist film 2 adheres to the transparent substrate 1 after etching the transparent substrate 1, the dust can be removed before the light shielding film 4 is formed. it can. As a result, it is possible to prevent a small pinhole from being generated in the light shielding film 4 due to dust on the resist film 2 and to fully exhibit the function as the light shielding film 4.
また、この実施の形態１に係る遮光パターンの形成方法では、上述したとおり、透明基板１と遮光膜４との間に密着層３が介在するため、透明基板１と遮光膜４との密着性が良好でない場合であっても適用可能である。 Further, in the light shielding pattern forming method according to the first embodiment, as described above, the adhesion layer 3 is interposed between the transparent substrate 1 and the light shielding film 4, and thus the adhesion between the transparent substrate 1 and the light shielding film 4. It is applicable even when the value is not good.
しかも、上述した公知技術１では、平坦化のための研磨工程が含まれないことから、遮光膜４を成膜するときに、透明基板１上の遮光膜４の表面と、透明基板１のピンホールに対応する部分の表面とが同一面となるようにしなければならない。そうしないと、その後工程で、透明基板１上のレジスト膜２と、その上に成膜された遮光膜４とを除去しても、表面に段差が生じて平坦にならない。したがって、その分だけ慎重な作業が要求され、勢い生産性が低下する。これに対して、この実施の形態１では、平坦化のための研磨工程が含まれることから、上述した公知技術１における不都合を伴わないので、生産性を高めることが可能となる。
［発明の実施の形態２］
Moreover, since the known technique 1 described above does not include a polishing step for flattening, when the light shielding film 4 is formed, the surface of the light shielding film 4 on the transparent substrate 1 and the pin of the transparent substrate 1 are used. The surface of the part corresponding to the hole must be flush with the surface. Otherwise, even if the resist film 2 on the transparent substrate 1 and the light shielding film 4 formed thereon are removed in the subsequent process, a step is generated on the surface and the surface does not become flat. Therefore, careful work is required, and productivity is reduced. On the other hand, the first embodiment includes a polishing step for flattening, and thus does not suffer from the disadvantages of the above-described known technique 1, and thus can increase productivity.
[Embodiment 2 of the Invention]
この実施の形態２に係る遮光パターンの形成方法は、透明基板１と遮光膜４との密着性が良好である場合に適用可能であり、レジスト除去工程から密着層形成工程を経て遮光膜形成工程に移行する代わりに、レジスト除去工程から直ちに（つまり、密着層形成工程を経ずに）遮光膜形成工程に移行する点を除き、上述した実施の形態１と基本的に同じ構成を有している。 The light-shielding pattern forming method according to the second embodiment is applicable when the adhesion between the transparent substrate 1 and the light-shielding film 4 is good. The light-shielding film forming process is performed from the resist removing process to the adhesive layer forming process. Instead of shifting to (1), it has basically the same configuration as that of the first embodiment described above except that the resist removal step shifts immediately (that is, without passing through the adhesion layer forming step) to the light shielding film forming step. Yes.
したがって、この実施の形態２に係る遮光パターンの形成方法では、透明基板１と遮光膜４との間に密着層３が介在しなくなる。そのため、密着層形成工程が不要となるほか、遮光膜形成工程において、透明基板１の表面に遮光膜４を成膜するとともに、この遮光膜４の厚さＴ２は、透明基板１の凸部１ａの高さＨ１より大きくする（Ｔ２＞Ｈ１）。また、研磨工程においては、透明基板１の凸部１ａが露出するまで遮光膜４を平坦に研磨した後、透明基板１の凸部１ａおよび遮光部に対応する部分の遮光膜４を同時に平坦に研磨する。 Therefore, in the light shielding pattern forming method according to the second embodiment, the adhesion layer 3 is not interposed between the transparent substrate 1 and the light shielding film 4. For this reason, the adhesion layer forming step becomes unnecessary, and in the light shielding film forming step, the light shielding film 4 is formed on the surface of the transparent substrate 1, and the thickness T2 of the light shielding film 4 is the convex portion 1a of the transparent substrate 1. Is larger than the height H1 (T2> H1). In the polishing process, the light shielding film 4 is polished flat until the convex portion 1a of the transparent substrate 1 is exposed, and then the convex portion 1a of the transparent substrate 1 and the light shielding film 4 corresponding to the light shielding portion are simultaneously flattened. Grind.
この実施の形態２では、上述した実施の形態１と同じ作用効果を奏する。これに加えて、密着層形成工程を省くことができるので、その分だけ生産性を高めることが可能となる。
［発明のその他の実施の形態］
In the second embodiment, the same operational effects as in the first embodiment described above can be obtained. In addition, since the adhesion layer forming step can be omitted, the productivity can be increased accordingly.
[Other Embodiments of the Invention]
なお、上述した実施の形態１では、遮光膜形成工程において、遮光膜４の厚さＴ２を適宜設定することにより、遮光部に対応する部分の遮光膜４の上面の高さが透明基板１の凸部１ａの上面より高くなるようにした。したがって、研磨工程においては、上述したとおり、遮光膜４のみを研磨した後、密着層３と遮光膜４とを同時に研磨し、さらに、透明基板１の凸部１ａと遮光膜４とを同時に研磨することになる。しかし、遮光部に対応する部分の遮光膜４の上面の高さは、必ずしも透明基板１の凸部１ａの上面より高くする必要はない。遮光部に対応する部分の遮光膜４の上面の高さが透明基板１の凸部１ａの上面より低い場合は、研磨工程において、ピンホールに対応する部分の遮光膜４、密着層３および透明基板１の凸部１ａを順に研磨した後、透明基板１の凸部１ａと遮光膜４とを同時に研磨することになる。この場合も、上述した実施の形態１と同じ作用効果を奏する。 In Embodiment 1 described above, in the light shielding film forming step, the thickness T2 of the light shielding film 4 is set as appropriate, so that the height of the upper surface of the light shielding film 4 corresponding to the light shielding part is the same as that of the transparent substrate 1. It was made higher than the upper surface of the convex part 1a. Therefore, in the polishing step, as described above, after polishing only the light shielding film 4, the adhesion layer 3 and the light shielding film 4 are simultaneously polished, and the convex portion 1 a and the light shielding film 4 of the transparent substrate 1 are simultaneously polished. Will do. However, the height of the upper surface of the light shielding film 4 corresponding to the light shielding portion is not necessarily higher than the upper surface of the convex portion 1 a of the transparent substrate 1. When the height of the upper surface of the light-shielding film 4 corresponding to the light-shielding portion is lower than the upper surface of the convex portion 1a of the transparent substrate 1, the light-shielding film 4, the adhesion layer 3 and the transparent portions corresponding to the pinholes in the polishing process. After the convex portions 1a of the substrate 1 are polished in order, the convex portions 1a and the light shielding film 4 of the transparent substrate 1 are polished simultaneously. Also in this case, the same effects as those of the first embodiment described above are achieved.
また、上述した実施の形態２では、遮光膜形成工程において、遮光膜４の厚さＴ２を適宜設定することにより、遮光部に対応する部分の遮光膜４の上面の高さが透明基板１の凸部１ａの上面より高くなるようにした。したがって、研磨工程においては、上述したとおり、遮光膜４のみを研磨した後、透明基板１の凸部１ａと遮光膜４とを同時に研磨することになる。しかし、遮光部に対応する部分の遮光膜４の上面の高さは、必ずしも透明基板１の凸部１ａの上面より高くする必要はない。遮光部に対応する部分の遮光膜４の上面の高さが透明基板１の凸部１ａの上面より低い場合は、研磨工程において、ピンホールに対応する部分の遮光膜４および透明基板１の凸部１ａを順に研磨した後、透明基板１の凸部１ａと遮光膜４とを同時に研磨することになる。この場合も、上述した実施の形態２と同じ作用効果を奏する。 In Embodiment 2 described above, in the light shielding film forming step, the thickness T2 of the light shielding film 4 is appropriately set, so that the height of the upper surface of the light shielding film 4 corresponding to the light shielding part is the same as that of the transparent substrate 1. It was made higher than the upper surface of the convex part 1a. Therefore, in the polishing step, as described above, after only the light shielding film 4 is polished, the convex portion 1a of the transparent substrate 1 and the light shielding film 4 are simultaneously polished. However, the height of the upper surface of the light shielding film 4 corresponding to the light shielding portion is not necessarily higher than the upper surface of the convex portion 1 a of the transparent substrate 1. If the height of the upper surface of the light shielding film 4 corresponding to the light shielding portion is lower than the upper surface of the convex portion 1a of the transparent substrate 1, the portions of the light shielding film 4 corresponding to the pinholes and the convexity of the transparent substrate 1 in the polishing step. After the portions 1a are polished in order, the convex portions 1a of the transparent substrate 1 and the light shielding film 4 are simultaneously polished. Also in this case, the same effects as those of the second embodiment described above can be obtained.
また、上述した実施の形態１、２では、基板洗浄工程において、透明基板１の表面を化学洗浄する場合について説明したが、化学洗浄以外の洗浄方法（例えば、ブラシ洗浄、超音波洗浄など）を代用または併用することもできる。 In the first and second embodiments, the case where the surface of the transparent substrate 1 is chemically cleaned in the substrate cleaning step has been described. However, a cleaning method other than chemical cleaning (for example, brush cleaning, ultrasonic cleaning, etc.) is used. It can be substituted or used together.
また、上述した実施の形態１では、研磨工程において、透明基板１の凸部１ａ、密着層３および遮光膜４を研磨するときに化学機械研磨を用いる場合について説明し、上述した実施の形態２では、研磨工程において、透明基板１の凸部１ａおよび遮光膜４を研磨するときに化学機械研磨を用いる場合について説明した。しかし、透明基板１の凸部１ａなどを所定の精度で平坦化することができる限り、化学機械研磨以外の研磨法（例えば、固定砥粒研磨法など）を代用または併用することも可能である。 In the first embodiment described above, the case where chemical mechanical polishing is used when polishing the convex portion 1a, the adhesion layer 3 and the light shielding film 4 of the transparent substrate 1 in the polishing step will be described. In the polishing step, the case where chemical mechanical polishing is used when the convex portions 1a and the light shielding film 4 of the transparent substrate 1 are polished has been described. However, as long as the convex portion 1a of the transparent substrate 1 can be flattened with a predetermined accuracy, it is possible to substitute or use a polishing method other than chemical mechanical polishing (for example, a fixed abrasive polishing method). .
また、上述した実施の形態１では、研磨工程において、透明基板１の凸部１ａ、密着層３および遮光膜４を研磨する場合について説明した。しかし、透明基板１の凸部１ａが露出した状態で遮光膜４および透明基板１の凸部１ａを平坦にすることができる限り、密着層３および遮光膜４のみを研磨してもよい。 In the first embodiment described above, the case where the convex portion 1a, the adhesion layer 3 and the light shielding film 4 of the transparent substrate 1 are polished in the polishing step has been described. However, only the adhesion layer 3 and the light-shielding film 4 may be polished as long as the light-shielding film 4 and the convex part 1a of the transparent substrate 1 can be flattened with the convex part 1a of the transparent substrate 1 exposed.
また、上述した実施の形態２では、研磨工程において、透明基板１の凸部１ａおよび遮光膜４を研磨する場合について説明した。しかし、透明基板１の凸部１ａが露出した状態で遮光膜４および透明基板１の凸部１ａを平坦にすることができる限り、遮光膜４のみを研磨してもよい。 In the second embodiment described above, the case where the convex portion 1a and the light shielding film 4 of the transparent substrate 1 are polished in the polishing step has been described. However, as long as the light shielding film 4 and the convex part 1a of the transparent substrate 1 can be flattened in a state where the convex part 1a of the transparent substrate 1 is exposed, only the light shielding film 4 may be polished.
また、上述した実施の形態１、２では、石英からなる透明基板１を用いて遮光パターンを形成する場合について説明したが、透明基板１の材質は石英に限るわけではない。例えば、螢石などを透明基板１の材質として採用することもできる。 Moreover, although Embodiment 1 and 2 mentioned above demonstrated the case where the light shielding pattern was formed using the transparent substrate 1 which consists of quartz, the material of the transparent substrate 1 is not necessarily restricted to quartz. For example, meteorite and the like can be adopted as the material of the transparent substrate 1.
また、上述した実施の形態１では、酸化クロムからなる密着層３を用いて遮光パターンを形成する場合について説明したが、密着層３の材質は酸化クロムに限るわけではない。例えば、クロム、タンタルなどを密着層３の材質として採用することも可能である。 Moreover, although Embodiment 1 mentioned above demonstrated the case where the light shielding pattern was formed using the contact | adherence layer 3 which consists of chromium oxide, the material of the contact | adherence layer 3 is not restricted to chromium oxide. For example, chromium, tantalum, or the like can be used as the material of the adhesion layer 3.
さらに、上述した実施の形態１、２では、白金からなる遮光膜４を用いて遮光パターンを形成する場合について説明したが、遮光膜４の材質は白金に限るわけではない。例えば、クロム、タンタルなどを遮光膜４の材質として採用することもできる。 Further, in the first and second embodiments, the case where the light shielding pattern is formed using the light shielding film 4 made of platinum has been described. However, the material of the light shielding film 4 is not limited to platinum. For example, chromium, tantalum, or the like can be used as the material of the light shielding film 4.
本発明は、例えば、液浸方式の縮小投影露光装置に組み込まれる波面収差測定器を製造する際に適用することができる。 The present invention can be applied, for example, when manufacturing a wavefront aberration measuring device incorporated in an immersion type reduction projection exposure apparatus.
１……透明基板
１ａ……凸部
１ｂ……露出面
２……レジスト膜
３……密着層
４……遮光膜
Ｄ１……凸部の直径
Ｈ１……凸部の高さ
Ｔ１……密着層の厚さ
Ｔ２……遮光膜の厚さ
DESCRIPTION OF SYMBOLS 1 ... Transparent substrate 1a ... Convex part 1b ... Exposed surface 2 ... Resist film 3 ... Adhesion layer 4 ... Light shielding film D1 ... Convex part diameter H1 ... Convex part height T1 ... Adhesion layer Thickness of T2: Light shielding film thickness
Claims (4)
前記レジスト膜をパターニングするパターニング工程と、
前記透明基板上に残っている前記レジスト膜をマスクとして前記透明基板をエッチングすることにより、当該透明基板に凸部を形成する基板エッチング工程と、
前記凸部上に残っている前記レジスト膜を除去するレジスト除去工程と、
前記透明基板の表面を洗浄する基板洗浄工程と、
前記透明基板の表面に遮光膜を形成する遮光膜形成工程と、
少なくとも前記遮光膜を研磨することにより、前記凸部が露出した状態で前記遮光膜および前記凸部を平坦にする研磨工程と
が含まれることを特徴とする遮光パターンの形成方法。 A resist film forming step of forming a resist film on the surface of the transparent substrate;
A patterning step of patterning the resist film;
Etching the transparent substrate with the resist film remaining on the transparent substrate as a mask to form a convex portion on the transparent substrate; and
A resist removing step of removing the resist film remaining on the convex portion;
A substrate cleaning step for cleaning the surface of the transparent substrate;
A light shielding film forming step of forming a light shielding film on the surface of the transparent substrate;
A method of forming a light shielding pattern, comprising: polishing the light shielding film and flattening the light shielding film and the convex portions in a state where the convex portions are exposed.
前記レジスト膜をパターニングするパターニング工程と、
前記透明基板上に残っている前記レジスト膜をマスクとして前記透明基板をエッチングすることにより、当該透明基板に凸部を形成する基板エッチング工程と、
前記凸部上に残っている前記レジスト膜を除去するレジスト除去工程と、
前記透明基板の表面を洗浄する基板洗浄工程と、
前記透明基板の表面に密着層を形成する密着層形成工程と、
前記密着層の上側に遮光膜を形成する遮光膜形成工程と、
少なくとも前記遮光膜および前記密着層を研磨することにより、前記凸部が露出した状態で前記遮光膜および前記凸部を平坦にする研磨工程と
が含まれることを特徴とする遮光パターンの形成方法。 A resist film forming step of forming a resist film on the surface of the transparent substrate;
A patterning step of patterning the resist film;
Etching the transparent substrate with the resist film remaining on the transparent substrate as a mask to form a convex portion on the transparent substrate; and
A resist removing step of removing the resist film remaining on the convex portion;
A substrate cleaning step for cleaning the surface of the transparent substrate;
An adhesion layer forming step of forming an adhesion layer on the surface of the transparent substrate;
A light shielding film forming step of forming a light shielding film on the upper side of the adhesion layer;
A method of forming a light shielding pattern, comprising: polishing at least the light shielding film and the adhesion layer to flatten the light shielding film and the convex portion with the convex portions exposed.
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