JP2011222292A5 - Power supply device for plasma discharge, method and optical film - Google Patents

Power supply device for plasma discharge, method and optical film Download PDF

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JP2011222292A5
JP2011222292A5 JP2010090104A JP2010090104A JP2011222292A5 JP 2011222292 A5 JP2011222292 A5 JP 2011222292A5 JP 2010090104 A JP2010090104 A JP 2010090104A JP 2010090104 A JP2010090104 A JP 2010090104A JP 2011222292 A5 JP2011222292 A5 JP 2011222292A5
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plasma discharge
power supply
switching element
resistor
holding circuit
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JP2011222292A (en
JP5623115B2 (en
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また、直流電源にプラズマ放電処理装置本体が接続されており、前記直流電源と前記プラズマ放電処理装置本体の間には、第１のスイッチング素子と、第１の抵抗と、第１のコンデンサ、第２のスイッチング素子を直列に接続した電位保持回路とが並列に接続されており、前記第１のスイッチング素子及び前記電位保持回路よりも前記直流電源側にはインダクタが直列に接続されており、プラズマ放電を起こす際には前記第１のスイッチング素子をオフ、前記第１のスイッチング素子をオンとし、プラズマ放電を停止する際には前記第１のスイッチング素子をオン、前記第１のスイッチング素子をオフとし、前記第１、第２スイッチング素子を交互にオン・オフ制御することで、プラズマ放電処理を連続して行うプラズマ放電処理方法を提案している。
また、上記のプラズマ放電処理装置を用いてイオン窒化、プラズマ侵炭、プラズマＣＶＤ、プラズマスパッタ蒸着またはマグネトロンスパッタ蒸着を行ない、処理された光学膜を提案している。 In addition, a plasma discharge processing apparatus main body is connected to the DC power supply. Between the DC power supply and the plasma discharge processing apparatus main body, a first switching element, a first resistor, a first capacitor, A potential holding circuit in which two switching elements are connected in series is connected in parallel, and an inductor is connected in series on the DC power supply side with respect to the first switching element and the potential holding circuit. When the discharge occurs, the first switching element is turned off and the first switching element is turned on. When the plasma discharge is stopped, the first switching element is turned on and the first switching element is turned off. And a plasma discharge processing method for continuously performing plasma discharge processing by alternately turning on and off the first and second switching elements. To have.
In addition, an optical film treated by ion nitriding, plasma carburizing, plasma CVD, plasma sputter deposition or magnetron sputter deposition using the above plasma discharge processing apparatus has been proposed.

Claims (6)

直流電源にプラズマ放電処理装置本体が接続されており、前記直流電源と前記プラズマ放電処理装置本体の間には、第１のスイッチング素子と、第１の抵抗と、第１のコンデンサ、第２のスイッチング素子を直列に接続した電位保持回路とが並列に接続されており、前記第１のスイッチング素子及び前記電位保持回路よりも前記直流電源側にはインダクタが直列に接続されており、前記第１、第２のスイッチング素子を交互にオン・オフ制御することで、プラズマ放電処理を連続して行うことを特徴とするプラズマ放電処理装置。   A plasma discharge processing apparatus main body is connected to the DC power supply, and a first switching element, a first resistor, a first capacitor, a second capacitor are connected between the DC power supply and the plasma discharge processing apparatus main body. A potential holding circuit in which switching elements are connected in series is connected in parallel, and an inductor is connected in series on the DC power supply side with respect to the first switching element and the potential holding circuit, and the first A plasma discharge treatment apparatus that performs plasma discharge treatment continuously by alternately turning on and off the second switching element. 前記電位保持回路の抵抗とコンデンサとの時定数を、前記第１、第２のスイッチング素子を交互オン・オフにする周期以上であることを特徴とする請求項１に記載のプラズマ放電用電源装置。   2. The plasma discharge power supply device according to claim 1, wherein a time constant between a resistor and a capacitor of the potential holding circuit is equal to or longer than a period in which the first and second switching elements are alternately turned on and off. . 前記電位保持回路には、前記第１の抵抗と並列に、直列に接続された第１のダイオードと第２の抵抗が、さらに接続されていることを特徴とする請求項１に記載のプラズマ放電用電源装置。   2. The plasma discharge according to claim 1, wherein a first diode and a second resistor connected in series are further connected to the potential holding circuit in parallel with the first resistor. Power supply. 前記電位保持回路には、前記第１の抵抗と直列に、お互いが並列に接続された第３の抵抗と第２のダイオ−ドが、さらに接続されていることを特徴とする請求項１に記載のプラズマ放電用電源装置。   2. The potential holding circuit further comprises a third resistor and a second diode connected in parallel with each other in series with the first resistor. The power supply device for plasma discharge as described. 直流電源にプラズマ放電処理装置本体が接続されており、前記直流電源と前記プラズマ放電処理装置本体の間には、第１のスイッチング素子と、第１の抵抗と、第１のコンデンサ、第２のスイッチング素子を直列に接続した電位保持回路とが並列に接続されており、前記第１のスイッチング素子及び前記電位保持回路よりも前記直流電源側にはインダクタが直列に接続されており、プラズマ放電を起こす際には前記第１のスイッチング素子をオフ、前記第１のスイッチング素子をオンとし、プラズマ放電を停止する際には前記第１のスイッチング素子をオン、前記第１のスイッチング素子をオフとし、前記第１、第２スイッチング素子を交互にオン・オフ制御することで、プラズマ放電処理を連続して行うことを特徴とするプラズマ放電処理方法。   A plasma discharge processing apparatus main body is connected to the DC power supply, and a first switching element, a first resistor, a first capacitor, a second capacitor are connected between the DC power supply and the plasma discharge processing apparatus main body. A potential holding circuit in which switching elements are connected in series is connected in parallel, and an inductor is connected in series to the DC power supply side from the first switching element and the potential holding circuit, and plasma discharge is performed. When waking up, the first switching element is turned off, the first switching element is turned on, and when the plasma discharge is stopped, the first switching element is turned on, and the first switching element is turned off, The plasma discharge process is performed continuously by alternately turning on and off the first and second switching elements. Law. 請求項１乃至４いずれか一項に記載のプラズマ放電処理装置を用いて、イオン窒化、プラズマ侵炭、プラズマＣＶＤ、プラズマスパッタ蒸着またはマグネトロンスパッタ蒸着を行ない、処理された光学膜。An optical film processed by performing ion nitriding, plasma carburizing, plasma CVD, plasma sputter deposition, or magnetron sputter deposition using the plasma discharge processing apparatus according to claim 1.
JP2010090104A 2010-04-09 2010-04-09 Plasma discharge power supply device and plasma discharge treatment method Expired - Fee Related JP5623115B2 (en)

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US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
DE102010031568B4 (en) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung and method for erasing arcs
US9685297B2 (en) * 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
KR20180135853A (en) * 2017-05-10 2018-12-21 어플라이드 머티어리얼스, 인코포레이티드 Pulsed DC power supply
CN111788655B (en) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 Spatial and temporal control of ion bias voltage for plasma processing
KR20200100643A (en) 2017-11-17 2020-08-26 에이이에스 글로벌 홀딩스 피티이 리미티드 Improved application of modulating supplies in plasma processing systems
WO2019099870A1 (en) 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Synchronized pulsing of plasma processing source and substrate bias
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

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