JP2011211014A - Light emitting element, display device, display method, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a light emitting element which can emit light with high efficiency while being focused on a normal line direction of a light emitting surface.SOLUTION: A light emitting element includes a light emitting layer 52, an interference layer (etalon 29) which is opposed to the light emitting layer 52 and interferes with normal light L1 progressing from the direction of the light emitting layer 52 in the normal line direction in such a manner that the light penetrates the interference layer (etalon 29), a reflection layer 55 which is formed at the opposite side of the light emitting layer 52 from the interference layer and reflects light from the direction of the light emitting layer 52, and a scattering structure (scattering layer 43) arranged between the interference layer (etalon 29) and the reflection layer 55.

Description

  The present invention relates to a light emitting element such as a light emitting diode, a display device using the same, a display method thereof, and an electronic apparatus.

  In recent years, light emitting diodes, which are light emitting elements, have come to be used for illumination, backlights of liquid crystal display devices, and the like. Since light-emitting diodes can achieve a desired light intensity with low power consumption, various applications are expected in light of ecological trends.

  For light-emitting diodes, many studies have been made on methods for increasing light extraction efficiency (for example, Patent Document 1, Non-Patent Document 1). These light emitting diodes are adjusted to emit light over a wide range, and are suitable for applications such as lighting.

JP 2003-179255 A

Y. C. Shen, et al, "Optical cavity effects in InGaN / GaN quantum-well-heterostructure flip-chip light-emitting diodes", Applied Physics Letters, Volume 82, pp2221-2223, 2003.

  By the way, depending on the application, it may be desired that the light emitting diode concentrates and emits light with respect to the front surface of the light emitting surface (relative to the normal direction of the light emitting surface). That is, the light emitting diode used for this purpose is desired to emit light in a narrow range and with high efficiency. However, the light-emitting diodes disclosed in Patent Document 1 and Non-Patent Document 1 emit light over a wide range and are not suitable for such applications.

  The present invention has been made in view of such problems, and a purpose thereof is a light emitting element, a display device, a display method, and an electronic device capable of emitting light in a concentrated manner in the normal direction of the light emitting surface with high efficiency. To provide equipment.

  The light-emitting element of the present invention includes a light-emitting layer, an interference layer, a reflective layer, and a scattering structure. The interference layer is disposed so as to face the light emitting layer and interferes so that normal light traveling in the normal direction from the direction of the light emitting layer is transmitted. The reflective layer is disposed to face the side of the light emitting layer opposite to the interference layer, and reflects light from the direction of the light emitting layer. The scattering structure is disposed between the interference layer and the reflection layer.

  A display device of the present invention includes a plurality of light emitting elements of the present invention, a plurality of first address lines and a plurality of second address lines, and a drive circuit. The plurality of first address lines and the plurality of second address lines transmit drive signals for causing the plurality of light emitting elements to emit light. The drive circuit supplies a drive signal to the plurality of first address lines.

  In the display method of the present invention, a drive signal is supplied to both ends of the plurality of first address lines in a time-sharing manner, and another drive signal different from the drive signal is supplied to the plurality of second address lines. A first address line supplied in a divided manner and supplied with a drive signal among the plurality of first address lines, and a second address line supplied with another drive signal among the plurality of second address lines. Light is emitted from the light emitting layer of the light emitting element connected to the light emitting element, the light is scattered by the scattering structure, and the light from the direction of the light emitting layer is reflected by the reflective layer disposed opposite to the light emitting layer. The interference layer disposed opposite to the reflective layer is caused to interfere so as to transmit normal light traveling in the normal direction from the direction of the light emitting layer.

  An electronic apparatus according to the present invention includes the display device.

  In the light emitting element, the display device, the display method, and the electronic device of the present invention, light emitted from the light emitting layer in various directions is reflected by the interference layer and the reflective layer, and travels between them. The light is then scattered by the scattering structure and its direction often changes. When this coming and going light enters the interference layer as normal light of the interference layer, it interferes in the interference layer and can pass through the interference layer. Thereby, the light emitted from the light emitting layer in various directions is condensed in the direction of the normal light of the interference layer.

  In the light emitting device of the present invention, for example, it is desirable that the interference layers are in contact with the light emitting layer or are disposed through other light-transmitting layers and are in close contact with each other. The light emitting layer and the reflective layer are, for example, a resonance in which normal light directly traveling from the light emitting layer to the interference layer and normal light traveling from the light emitting layer through the reflective layer to the interference layer function in phase with each other. It is desirable to construct the structure. Here, “same phase” is not limited to the phase relationship in the case where the phases are completely matched, but includes a phase relationship in which two lights interfere with each other and strengthen each other.

  For example, the scattering structure may be formed on the surface of the reflective layer. Moreover, you may make it a scattering structure be comprised by the several layer from which a refractive index mutually differs, for example. The interference layer is preferably an etalon, for example. For example, a color conversion layer that converts the wavelength of transmitted light may be provided between the interference layer and the reflection layer.

  In the display device of the present invention, for example, each of the plurality of light emitting elements is connected to one of the plurality of first address lines and to one of the plurality of second address lines. The plurality of first address lines may be formed of a translucent material, and the drive circuit may supply a drive signal to both ends of the first address line. As the translucent material, for example, a semiconductor can be used.

  According to the light-emitting element, the display device, the display method, and the electronic apparatus of the present invention, since the interference layer, the reflective layer, and the scattering structure are provided, the light emitted from the light-emitting layer can be collected and is high. With efficiency, light can be emitted in a concentrated manner in the normal direction of the light emitting surface.

It is a block diagram showing the example of 1 structure of the display apparatus which concerns on the 1st Embodiment of this invention. FIG. 2 is a perspective view illustrating a configuration example of a display device illustrated in FIG. 1. It is sectional drawing showing the schematic sectional structure of the light emitting element which concerns on the pixel shown in FIG. It is a perspective view showing an example of the manufacturing process of the display device shown in FIG. FIG. 5 is a cross-sectional view illustrating a schematic cross-sectional structure of the display device illustrated in FIG. 4. FIG. 4 is a schematic diagram illustrating an operation example of the light-emitting element illustrated in FIG. 3. FIG. 4 is a characteristic diagram illustrating a characteristic example of the semi-resonator structure illustrated in FIG. 3. FIG. 4 is a schematic diagram illustrating another operation example of the light emitting element illustrated in FIG. 3. FIG. 4 is a characteristic diagram illustrating a characteristic example of the light emitting element illustrated in FIG. 3. FIG. 3 is a characteristic diagram illustrating a characteristic example of the display device illustrated in FIG. 1. It is sectional drawing and the characteristic view showing the example of 1 characteristic of the light emitting element which concerns on a comparative example. It is a schematic diagram showing one structural example and one operation example of the light emitting element which concerns on another comparative example. It is a schematic diagram showing one structural example and one operation example of the light emitting element which concerns on the modification of the 1st Embodiment of this invention. It is a schematic diagram showing one structural example and one operation example of the light emitting element which concerns on the 2nd Embodiment of this invention. It is a schematic diagram showing one structural example and one operation example of the light emitting element which concerns on the modification of the 2nd Embodiment of this invention. It is a circuit diagram showing the example of 1 structure of the pixel which concerns on a modification. It is sectional drawing showing the schematic sectional structure of the light emitting element which concerns on another modification. It is a perspective view showing the external appearance structure of the display apparatus which concerns on an application example.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The description will be given in the following order.
1. First Embodiment 2. FIG. Second embodiment

<1. First Embodiment>
[Configuration example]
(Overall configuration example)
FIG. 1 shows a configuration example of a display device according to the first embodiment of the present invention. Note that the light-emitting element and the display method according to the embodiment of the present invention are embodied by the present embodiment and will be described together. The display device 1 includes a control unit 11, column drivers 12A and 12B, row drivers 13A and 13B, and a display device 2. In the following description, the column driver 12 is appropriately used as a general term for the column drivers 12A and 12B, and the row driver 13 is appropriately used as a general term for the row drivers 13A and 13B.

  The control unit 11 is a circuit that generates a column drive signal Vsigr for driving the column driver 12 and a row drive signal Vsigc for driving the row driver 13 based on the supplied image signal Sig.

  The column driver 12 is a circuit that applies a pixel signal Vpix to a column address line 31 (described later) of the display device 2 based on a column drive signal Vsigr supplied from the control unit 11. In this example, the column driver 12 includes two column drivers 12A and 12B having the same circuit configuration, and supplies a pixel signal Vpix via column electrodes 32 (described later) of the column address line 31 of the display device 2. It is supposed to be. Instead of the two column drivers 12A and 12B, one column driver may be used to drive the column address line 31 via the column electrodes 32 at both ends of the column address line 31.

  The row driver 13 sequentially selects one of the row address lines 33 (described later) of the display device 2 in a time division manner based on the row drive signal Vsigc supplied from the control unit 11 and applies the scanning signal Vscan. Circuit. In this example, the row driver 13 includes two row drivers 13A and 13B having the same circuit configuration, and supplies a scanning signal Vscan via row electrodes 34 (described later) at both ends of the row address line 33 of the display device 2. It is supposed to be. Instead of the two row drivers 13A and 13B, one row driver may be used to drive the row address line 33 via the row electrodes 34 at both ends of the row address line 33.

  The display device 2 is a device that performs display based on the pixel signal Vpix and the scanning signal Vscan. The display device 2 includes column address lines 31, row address lines 33, and pixels 7.

  The column address line 31 transmits the pixel signal Vpix supplied from the column driver 12 to each pixel 7. Column electrodes 32 are formed at both ends of the column address line 31, and the pixel signal Vpix is supplied to the column address line 31 simultaneously from both sides via these column electrodes 32. With this configuration, as will be described later, a voltage drop in the column address line 31 when driving each pixel 7 can be reduced as compared with the case where the pixel signal Vpix is supplied from one side of the column address line 31.

  The row address line 33 transmits the scanning signal Vscan supplied from the row driver 13 to each pixel 7. Similar to the column address line 31, row electrodes 34 are formed at both ends of the row address line 33, and the scanning signal Vscan is simultaneously supplied to the row address line 33 from both sides via these row electrodes 34. It is like that.

  The pixel 7 has a light emitting element 4 (described later) including a light emitting diode, and emits light with a light intensity corresponding to the potential difference between the pixel signal Vpix and the scanning signal Vscan. The pixels 7 are arranged at positions where the column address lines 31 and the row address lines 33 intersect, and are formed in a matrix on the display device 2. When the pixel signal Vpix is supplied to the column address line 31 and the scanning signal Vscan is supplied to the row address line 33, the pixel 7 emits light with a light intensity corresponding to the potential difference. That is, the display device 2 is driven by a so-called passive drive method.

(Display device 2)
FIG. 2 is a perspective view illustrating a configuration example of the display device 2. 2, (A) shows the overall appearance of the display device 2, and (B) shows an enlarged view of the main part (dashed line part) of (A). The display device 2 includes a substrate 21 and an etalon 29.

  The substrate 21 is a translucent substrate having a property of transmitting light, and is configured by, for example, a sapphire substrate. The column address line 31, the column electrode 32, the row address line 33, and the row electrode 34 described above are formed on one surface of the substrate 21. The column address line 31 is composed of a material having translucency and conductivity, for example, an n-type GaN crystal layer (semiconductor material). Alternatively, the column address line 31 may be made of ITO (Indium Tin Oxide). The row address line 33 is made of metal in this example. A light emitting hill 35 is formed at a portion where the column address line 31 and the row address line 33 intersect. The light emitting hill 35 constitutes a light emitting diode that emits light 9 having a single wavelength, and a potential difference between the pixel signal Vpix supplied to the column address line 31 and the scanning signal Vscan supplied to the row address line 33. It emits light with a light intensity corresponding to. The light emitted from the light emitting hill 35 enters the etalon 29 through the translucent column address line 31 and the substrate 21.

  The etalon 29 is an optical interference filter that interferes so as to transmit light in the normal direction of the surface of light having a single wavelength incident through the substrate 21. The etalon 29 is composed of a plate having excellent parallel flatness, and a general optical glass can be used as the material of the plate. Inside the etalon 29, similar to the principle of the Fabry-Perot interferometer, reflection occurs at the interfaces on both sides of the etalon 29 to generate a standing wave, thereby realizing an interference effect. Specifically, out of the single wavelength light 9 incident on the etalon 29, the light traveling in the normal direction of the etalon 29 generates a standing wave inside the etalon 29 and exits from the opposite side of the incident direction. To do. In other words, such incident light passes through the etalon 29. On the other hand, out of the single-wavelength light 9 incident on the etalon 29, the light traveling in the direction deviated from the normal direction of the etalon 29 is reflected to the incident side. As described above, the etalon 29 selectively transmits light traveling in the normal direction of the etalon 29 out of the incident light using the angle dependency of the interference effect of the optical interference filter. Thereby, the etalon 29 functions so as to emit light most in the normal direction of the display surface of the display device 2.

  In this example, the substrate 21 and the etalon 29 are configured as separate bodies. However, the present invention is not limited to this. For example, the substrate 21 may have the function of the etalon 29.

  Each light emitting hill 34 constitutes the light emitting element 4 together with the row address line 33, the column address line 31, the substrate 21, and the etalon 29 corresponding to the light emitting hill 34. Next, the light emitting element 4 will be described.

  3A shows a schematic cross-sectional structure of the light-emitting element 4, and FIG. 3B shows an optical equivalent structure of the light-emitting element 4.

  As shown in FIG. 3A, in the light emitting element 4, the electrode 41, the light emitter 42, the scattering layer 43, and the electrode 44 are formed in this order on one surface of the substrate 21. The electrode 41 corresponds to the column address line 31 shown in FIG. 2B and is used to supply power to the light emitter 42. The light emitter 42 corresponds to the light emitting hill 35. The scattering layer 43 is a layer that scatters light and includes, for example, a plurality of layers having different refractive indexes. The electrode 44 corresponds to an electrode 24 (described later) for making contact between the row address line 33 and the light emitter 42, and is formed so as to supply power to the light emitter 42 via the scattering layer 43. ing. The electrode 44 is made of metal and reflects light incident from the direction of the light emitter 42. An etalon 29 is formed on the opposite surface of the substrate 21 to the surface on which the light emitters 42 and the like are formed. These layers are formed in close contact with each other so that unnecessary reflection does not occur as will be described later.

  As shown in FIG. 3B, the optical equivalent structure of the light-emitting element 4 includes an etalon 29, a light emitter 42, a scattering layer 43, and a reflective layer 55. Since the electrode 41 and the substrate 21 illustrated in FIG. 3A have a light-transmitting property, illustration thereof is omitted. The light emitter 42 includes a light emitting layer 52 that actually emits light, and light transmitting layers 51 and 53 on both sides thereof. The reflective layer 55 corresponds to the electrode 44 that optically functions as a reflective layer.

  As will be described later, the light emitting layer 52, the light transmitting layer 53, and the reflecting layer 55 constitute a semi-resonator structure RS. By this semi-resonator structure RS, the light emitted from the light emitting layer 52 and reflected by the reflective layer 55 and directed to the etalon 29 interferes with the light emitted from the light emitting layer 52 and directly directed to the etalon 29, so that the normal line of the etalon 29 is obtained. The light going in the direction is the most intensifying.

  With the configuration described above, in the light emitting element 4, among the light emitted from the light emitting layer 52 and entering the etalon 29, the light traveling in the normal direction of the etalon 29 is transmitted through the etalon 29 and shifted in a direction shifted from the normal direction. The traveling light is reflected by the etalon 29 and then scattered by the scattering layer 43. Of the scattered light, the light traveling in the normal direction toward the etalon 29 is transmitted through the etalon 29. On the other hand, of the light emitted from the light emitting layer 52 and incident on and reflected by the reflective layer 55, the light traveling in the normal direction of the etalon 29 is strengthened most by the half-resonator structure RS, and enters the etalon 29 and is transmitted therethrough. Thus, the light emitting element 4 emits light most in the normal direction of the light emitting surface.

  Here, the etalon 29 corresponds to a specific example of the “interference layer” in the present invention. The scattering layer 43 corresponds to a specific example of “scattering structure” in the invention. The semi-resonator structure RS corresponds to a specific example of “resonance structure” in the present invention.

  The pixel signal Vpix corresponds to a specific example of “driving signal” in the present invention, and the scanning signal Vscan corresponds to a specific example of “other driving signal” in the present invention. The column address line 31 corresponds to a specific example of “first address line” in the present invention. The row address line 33 corresponds to a specific example of “second address line” in the present invention. The column driver 12 corresponds to a specific example of “driving circuit” in the present invention.

[Example of manufacturing method]
Next, a method for manufacturing the display device 2 according to the present embodiment will be described.

  FIG. 4 is a perspective view for explaining an example of the manufacturing process of the display device 2.

  First, the n-type GaN crystal layer 22 and the GaN crystal layer 23 are formed on the substrate 21 by MOCVD (Metal Organic Chemical Vapor Deposition) (step S1). The n-type GaN crystal layer 22 will be the column address line 31 later. The GaN crystal layer 23 will later become the light emitting hill 35, and is formed, for example, by laminating an n-type GaN crystal layer and a p-type GaN crystal layer. Further, a scattering layer 43 (not shown) is formed near the upper surface of the GaN crystal layer 23.

  Next, the electrode 24 is formed on the GaN crystal layer 23 (scattering layer 43) (step S2). The electrode 24 is used to make contact between the light emitting hill 35 and the row address line 33, and functions as the reflective layer 55 of the semi-resonator structure RS, and is formed at a position where the light emitting element 4 is disposed. The For example, silver is used as the material of the electrode 24.

  Next, the light emitting hill 35 is formed (step S3). Specifically, portions of the GaN crystal layer 23 formed in step S1 other than the position where the light emitting element 4 is disposed later are processed by dry etching to form the light emitting hill 35. In the etched portion, the n-type GaN crystal layer 22 formed in step S1 appears.

  Next, the column address line 31 is formed (step S4). Specifically, in the n-type GaN crystal layer 22 formed in step S <b> 1, portions other than the portion that will later become the column address line 31 are processed by dry etching. Thereby, a column address line 31 made of an n-type GaN crystal material is formed. The substrate 21 appears in the etched portion.

  Next, the interlayer insulating film 25 is formed (step S5). For example, polyimide is used as the material of the interlayer insulating film 25.

  Next, the row address line 33, the row electrode 34, and the column electrode 32 are formed (step S6). As the material of the row address line 33, the row electrode 34, and the row electrode 34, for example, a metal such as TiW / Ti / Pt / Au is used.

Finally, the etalon 29 is formed on the surface of the substrate 21 opposite to the surface on which the light emitting hill 35 and the like are formed (step S7). The formation of the etalon 29 is performed by vapor deposition or pasting the separately formed etalon 29. The etalon 29 is made of a material having a refractive index different from that of the substrate 21. A general optical glass can be used as the material of the etalon 29. Specifically, magnesium fluoride MgF ₂ (refractive index n = 1.38), zinc sulfide ZnS (n = 2.4), cryolite Na ₃ AlF ₆ (n = 1.35), calcium fluoride CaF _2, silicon oxide SiO2, aluminum oxide Al ₂ O ₃ is available.

  The manufacture of the display device 2 is thus completed.

  FIG. 5 shows a schematic cross-sectional structure in the direction of arrows VV in step S7 of FIG. Through the above manufacturing process, the light emitting elements 4 are arranged and formed on the substrate 12 in a matrix, and each light emitting element 4 can be controlled by the column address lines 31 and the row address lines 33 from the outside.

[Operation and Action]
Subsequently, the operation and action of the display device 1 of the present embodiment will be described.

(Overview of overall operation)
The control unit 11 generates a column driving signal Vsigr and a row driving signal Vsigc based on the supplied image signal Sig. The column driver 12 applies the pixel signal Vpix to the column address line 31 of the display device 2 based on the column drive signal Vsigr supplied from the control unit 11. The row driver 13 sequentially selects one of the row address lines 33 of the display device 2 in a time division manner based on the row drive signal Vsigc supplied from the control unit 11 and applies the scanning signal Vscan. When the pixel signal Vpix and the scanning signal Vscan are applied, the light emitting element 4 of the display device 2 emits light with a light intensity corresponding to the potential difference. The light emitting element 4 emits light concentrated in the normal direction of the light emitting surface. The display device 2 displays an image instructed by the image signal Sig as the light emitting elements 4 sequentially emit light over the display surface.

(Operation and Action of Light-Emitting Element 4)
The light emitting element 4 collects the light emitted from the light emitting layer 52 by the etalon 29, the semi-resonator structure RS, and the scattering layer 43, thereby concentrating the light in the normal direction of the etalon 29 and emitting the light. Hereinafter, these functions will be described in detail.

  First, the operation of the etalon 29 will be described.

  FIG. 6 schematically illustrates an operation example of the light-emitting element 4. In FIG. 6, for convenience of explanation, it is assumed that light is not scattered by the scattering layer 43.

  As shown in FIG. 6, among the light traveling from the light emitting layer 52 to the etalon 29, the light L <b> 1 traveling in the normal direction of the etalon 29 is selectively transmitted and emitted due to the interference effect of the etalon 29. On the other hand, of the light traveling from the light emitting layer 52 to the etalon 29, the light L2 traveling in a direction slightly deviated from the normal direction of the etalon 29 is reflected by the etalon 29.

In the etalon 29, the conditions for strengthening the light by the interference effect are shown as follows.
D × cos φ = m × 1/2 × λ / n (1)
Here, D is the thickness of the etalon 29, φ is the incident angle between the direction of light incident on the etalon 29 and the normal direction of the etalon 29, m is a natural number, and λ is the etalon. 29 is the wavelength of light, and n is the refractive index of the etalon 29.

In order for the light L1 traveling in the normal direction of the etalon 29 to be selectively transmitted due to the interference effect of the etalon 29, the expression (the following expression) in which the incident angle φ = 0 [deg] is satisfied in the expression (1) is satisfied. Thus, for example, the thickness D of the etalon 29 may be set.
D = m × 1/2 × λ / n (2)

  As described above, the etalon 29 transmits the light traveling in the normal direction of the etalon 29 out of the light incident from the light emitting layer 52 using the angle dependency of the interference effect of the optical interference filter. Thereby, the light emitting element 4 can concentrate and emit light in the normal direction of the etalon 29.

  Next, the operation of the semi-resonator structure RS will be described.

  As shown in FIG. 6, out of the light emitted from the light emitting layer 52 and reflected by the reflective layer 55 toward the etalon 29, the light L3 traveling in the normal direction of the light emitting layer 52 and the light L3 emitted directly from the light emitting layer 52 are directly emitted. Of the light traveling toward the etalon 29, the light L4 traveling in the normal direction of the light emitting layer 52 has the same phase relationship with each other and is strengthened by interference. That is, the light emitting layer 52, the light transmissive layer 53, and the reflective layer 55 function as a semi-resonator.

In the semi-resonator structure RS, the condition that the light is strengthened by the interference effect is shown as follows.
2d × cos θ = (k + 1/2) × λn (3)
Here, d is an interval between the light emitting layer 52 and the reflecting layer 55 (width of the light transmitting layer 53), θ is an angle between the light traveling direction and the normal direction of the light emitting layer 52, and k is a natural number. Λn is the wavelength of light in the translucent layer 53.

In order for the lights L3 and L4 traveling in the normal direction of the light emitting layer 52 to strengthen each other due to the interference effect, the expression (the following expression) in which the angle θ = 0 [deg] in Expression (3) is satisfied. For example, the interval d of the semi-resonator structure RS may be set.
2d = (k + 1/2) × λn (4)

  As described above, the semi-resonator structure RS can enhance the light L3 and L4 traveling in the normal direction of the light emitting layer 52 among the light traveling from the light emitting layer 52 to the etalon 29 by the interference effect. Thereby, the light emitting element 4 can concentrate and emit light in the normal direction of the etalon 29.

  FIG. 7 shows the relationship between the interference effect and the parameter d / λn. The characteristic C1 shows a case where the light is intensified by the interference effect, and the relationship between the angle θ and the distance d / wavelength λn is plotted based on the equation (3). Here, the natural number k is 1.

  As shown in FIG. 7, for example, when it is desired to intensify the light in the normal direction of the light emitting layer 52, the value of d / λn at the intersection of the characteristic C1 and the line having the angle θ of zero (0. The interval d may be set so that 75).

  Next, the operation of the scattering layer 43 will be described.

  FIG. 8 schematically shows another operation example of the light emitting element 4. Of the light emitted from the light emitting layer 52 and traveling toward the reflective layer 55, the light L11 deviated from the normal direction of the light emitting layer 52 is scattered by the scattering layer 43 when reflected by the reflective layer 55, and its direction changes. The light passes through the light emitting layer 52 and enters the etalon 29. At this time, the light L11B traveling in the normal direction of the etalon 29 among the incident light can pass through the etalon 29.

  If the light incident on the etalon 29 after being scattered by the scattering layer 43 deviates from the normal direction of the etalon 29, the light is reflected inside the light emitter 42, but the light is again reflected in the scattering layer 43. When the scattered light travels in the normal direction of the etalon 29, the etalon 29 can be transmitted. In this way, when light is emitted from the light emitting layer 52, even if it is deviated from the normal direction of the light emitting layer 52, it is scattered by the scattering layer 43 when reciprocating between the etalon 29 and the reflective layer 55, When the light travels in the normal direction of the etalon 29, the light can pass through the etalon 29.

  On the other hand, when there is no scattering layer 43, the light L11 is reflected by the reflecting layer 55 as it is to become light L11C. The light L11C is reflected when it enters the etalon 29. This light travels back and forth between the etalon 29 and the reflective layer 55, but since there is no scattering layer 43, its traveling direction does not change, and it does not become light traveling in the normal direction of the etalon 29. It does not pass through the etalon 29.

  As described above, the scattering layer 43 can change the direction of light, and can make light shifted from the normal direction of the etalon 29 into light that travels in the normal direction of the etalon 29. Thereby, the light emitting element 4 can condense light in various directions in the normal direction of the etalon 29, and improve the light extraction efficiency.

  Next, the light intensity characteristic in the light emitting element 4 will be described.

  FIG. 9A shows an example of the characteristic of the emission angle dependency of the light intensity in the light emitting element 4, and FIG. 9B shows an example of the characteristic of the emission angle dependency of the intensity within the solid angle. is there. Here, the radiation angle γ is an angle between the direction of light emitted from the light emitting element 4 and the normal direction of the etalon 29. In FIG. 9A, the light intensity is normalized with the intensity in the direction of the radiation angle γ = 0 [deg] being 1. In FIG. 9B, the solid angle intensity indicates the integrated intensity of the light emitted into the cone having the radiation angle γ with the normal direction of the etalon 29 as the axis. This solid angle intensity is standardized with the integrated intensity (total luminous flux) of all the light emitted from the surface of the etalon 29 as 1.

  As shown in FIG. 9A, the light intensity (characteristic C10) of the light-emitting element 4 immediately decreases as the radiation angle γ increases as compared with the trigonometric function (cos γ) line R1 shown as a reference. is doing. Accordingly, the solid angle intensity (characteristic C11) of the light-emitting element 4 immediately increases as the radiation angle γ increases as shown in FIG. 9B, and at the radiation angle γ = 20 [deg]. The solid angle strength is 50%. This means that the light emitting element 4 concentrates and emits light in the normal direction of the etalon 29. That is, the light emitting element 4 collects light emitted from the light emitting layer 52 in various directions by the etalon 29, the half-resonator structure RS, and the scattering layer 43, so that the light is emitted in the normal direction of the etalon 29. Is concentrated and ejected.

(Operation and Action of Display Device 1)
In the display device 1, the column driver 12 supplies the pixel signal Vpix from the column electrodes 32 on both sides of the column address line 31, and the row driver 13 receives the scanning signal Vscan from the row electrodes 34 on both sides of the row address line 33. Supply. This operation will be described below.

  FIG. 10 shows the light intensity distribution in the XX direction of the display device 4 shown in step S7 of FIG. As shown in FIG. 10, the variation of the light intensity of each light emitting element 4 of the column address line 31 is about 10%, and a low variation is realized.

  In this example, since the column address line 31 is formed of a semiconductor material (n-type GaN crystal), the electric resistance of the column address line 31 is higher than that of metal. Therefore, when the column driver 12 drives each light emitting element 4, a voltage drop in the column address line 31 tends to be a problem. In particular, depending on the position of each light emitting element 4 in the column address line 31, there is a possibility that the light intensity of each light emitting element 4 varies.

  In the display device 1, when the pixel signal Vpix is supplied to the column address line 31, it is supplied from both sides of the column address line 31. As a result, the voltage drop in the column address line 31 is minimized, and by realizing an equipotential in the column address line 31, variations in light intensity can be suppressed.

  Although the column address line 31 has been described above, the same applies to the row address line 33. That is, in the display device 1, when the scanning signal Vscan is supplied to the row address line 33, it is supplied from both sides of the row address line 33. As a result, the voltage drop in the row address line 33 is minimized, and by realizing an equipotential in the row address line 33, variation in light intensity can be suppressed.

(Comparative Example 1)
Next, a display device according to Comparative Example 1 will be described. This comparative example uses the light emitting element 4R which condenses using a lens. Other configurations are the same as those in the above embodiment (FIG. 1).

  FIG. 11A illustrates a configuration example of the light emitting element 4R according to the comparative example 1, and FIG. 11B illustrates a characteristic example of the emission angle dependency of the light intensity in the light emitting element 4R. FIG. 11C shows a characteristic example of the radiation angle dependency of the intensity within the solid angle.

  The light emitting element 4R includes a lens L. The lens L has a function of collecting light emitted from the light emitter 42 in various directions using a refraction effect and emitting light in the normal direction of the light emitter 42.

  For example, the lens L is optimized and designed so that light emitted in various directions from around the center of the light emitter 42 proceeds in the normal direction of the light emitter 42. Specifically, for example, the light L22 emitted from the point P1 near the center of the light emitter 42 in a direction deviated from the normal direction of the light emitter 42 is refracted at the interface of the lens L, and the method of the light emitter 42 is reached. It is designed to proceed in the line direction. On the other hand, in this case, the lights L23 and L24 emitted from the point P2 away from the vicinity of the center of the light emitter 42 may not travel in the normal direction of the light emitter 42 when refracting at the lens interface. As described above, it is generally not easy to collect the light emitted from various positions of the light emitter 42 in various directions by the lens L.

  If the light emitter 42 is configured to emit only from the point P1 near the center of the light emitter 42, the light emitted from the light emitting element travels in the normal direction of the light emitter 42. In this case, since the light is emitted only from the point P1, the light intensity itself decreases.

  As shown in FIG. 11B, the light intensity (characteristic R3) of the light emitting element 4R according to Comparative Example 1 increases once and then decreases as the radiation angle γ increases. Compared with the trigonometric function (cos γ) line R1 shown as a reference, the light intensity is less likely to decrease when the radiation angle γ increases. Accordingly, the solid angle intensity (characteristic R4) of the light emitting element 4R slowly increases as the radiation angle γ increases as shown in FIG. 11C. This means that in the light emitting element 4R, the light emitted from various positions of the light emitting body 42 in various directions cannot be sufficiently condensed by the lens L.

  On the other hand, in the light-emitting element 4 according to the present embodiment, both the light intensity (FIG. 9A) and the solid angle intensity (FIG. 9B) change immediately as the radiation angle γ increases. Light emitted from various positions of the light emitter 42 in various directions can be effectively collected.

(Comparative Example 2)
Next, a display device according to Comparative Example 2 will be described. In this comparative example, the light emitting element 4S in which the constituent layers are not in close contact with each other is used. Other configurations are the same as those in the above embodiment (FIG. 1).

  FIG. 12 illustrates one configuration example and one operation example of the light emitting element 4S. A gap 60 is provided between the etalon 29 and the translucent layer 51. The light L25 emitted from the light emitting layer 52 and entering the gap 60 is first refracted at the interface between the gap 60 and the light transmitting layer 51 depending on the refractive index thereof. When the refracted light L26 travels in a direction deviating from the normal direction of the etalon 29, it is reflected by the interface of the etalon 29. The reflected light again enters the interface between the gap 60 and the light transmitting layer 51 and is reflected by this interface. Further, the reflected light is incident on the etalon 29 again, but the direction of the light is deviated from the normal direction of the etalon 29 and is reflected by the interface of the etalon 29. As described above, the light traveling back and forth by being reflected at both ends of the gap 60 cannot change the direction in which the light travels, and therefore cannot pass through the etalon 29 and is confined in the gap 60. As a result, the light emission intensity of the light emitting element 4S decreases. In this example, it is assumed that the gap 60 is inserted between the etalon 29 and the translucent layer 51. However, the present invention is not limited to this, for example, between other layers adjacent to each other. The same applies when a gap is inserted, and the same applies when another light-transmitting layer having a refractive index different from that of the adjacent layer is inserted instead of the gap.

  On the other hand, in the light emitting element 4 according to the present embodiment, the layers are configured to be in close contact with each other. Thereby, the unnecessary reflection as described above can be suppressed, and a decrease in emission intensity can be suppressed.

[effect]
As described above, in this embodiment, since the etalon, the semi-resonator structure, and the scattering layer are provided, the light emitted from the light emitting layer 52 is collected and concentrated in the normal direction of the surface of the light emitting element. Can emit light.

  In this embodiment mode, the layers constituting the light-emitting element are arranged in close contact with each other, so that unnecessary reflection can be suppressed and a decrease in light emission intensity can be suppressed.

  Further, in this embodiment, when the pixel signal Vpix is supplied to the column address line 31, it is supplied from both sides of the column address line 31, and when the scanning signal Vscan is supplied to the row address line 33, both sides of the row address line 33 are supplied. Thus, the voltage drop in the column address line 31 and the row address line 33 can be minimized, and the variation in the light intensity of each light emitting element can be suppressed.

[Modification 1-1]
In the above embodiment, the scattering layer 43 is formed at the interface between the light transmitting layer 53 and the reflective layer 55 (that is, the surface of the reflective layer 55). However, the present invention is not limited to this. Instead of this, for example, the surface of the reflection surface 55 may be a scattering surface. Further, for example, it may be formed inside the light transmitting layer 51 or the light transmitting layer 53. Below, the case where a scattering layer is formed in the inside of the translucent layer 51 is demonstrated.

  FIG. 13 illustrates a configuration example and a schematic operation example of the light emitting element 4B according to the present modification. The light emitting element 4 </ b> B has a scattering layer 43 </ b> B inside the light transmitting layer 51.

  Of the light emitted from the light emitting layer 52 and traveling toward the etalon 29, the light L12 traveling in a direction deviated from the normal direction of the light emitting layer 52 is scattered by the scattering layer 43B, changes its direction, and enters the etalon 29. At that time, the light L12B traveling in the normal direction of the etalon 29 among the incident light can pass through the etalon 29.

  Even when the light that is scattered by the scattering layer 43B and incident on the etalon 29 deviates from the normal direction of the etalon 29, it is scattered by the scattering layer 43B when reciprocating between the etalon 29 and the reflective layer 55, When the light is in the normal direction, the etalon 29 can be transmitted.

<2. Second Embodiment>
Next, a display device according to a second embodiment of the present invention will be described. In this embodiment mode, the light-emitting element has a color conversion layer. Other configurations are the same as those in the first embodiment (FIG. 1 and the like). In addition, the same code | symbol is attached | subjected to the component substantially the same as the display apparatus 1 which concerns on the said 1st Embodiment, and description is abbreviate | omitted suitably.

  FIG. 14 illustrates a configuration example and a schematic operation example of the light-emitting element 5 according to the present embodiment. The light emitting element 5 has a color conversion layer 57 between the light emitting layer 52 and the reflective layer 55. The color conversion layer 57 has a function of converting the wavelength of transmitted light, and is made of, for example, a phosphor. The color conversion layer 57 is formed by, for example, crystal growth or application of a resin mixed with powder. The color conversion layer 57 converts, for example, light having a shorter wavelength than red emitted from the light emitting layer 52 into red. Alternatively, the color conversion layer 57 may convert light having a wavelength shorter than green into green, or may convert light having a wavelength shorter than blue into blue. The etalon 29 is configured with a thickness D or the like so as to have the above-described interference effect on the wavelength of the converted light. The semi-resonator structure RS is configured by setting an interval d and the like in consideration of wavelength conversion by the color conversion layer 57.

  As shown in FIG. 14, among the light emitted from the light emitting layer 52 and traveling toward the reflective layer 55, the light L31 traveling in the normal direction of the light emitting layer 52 is transmitted through the color conversion layer 57 and the wavelength thereof is converted. Thereafter, the light is reflected by the reflective layer 55 (light L31B). The reflected light L31B passes through the light-emitting layer 52 after passing through the color conversion layer 57 again. At that time, the light L31B is hardly absorbed in the light emitting layer 52 because its wavelength is different from the wavelength of light emitted in the light emitting layer 52 and does not generate electron-hole pairs. The light L31B passes through the light emitting layer 52 and then enters the scattering layer 43B. When the light L41B is not scattered by the scattering layer 43B, the light L41B can travel straight and enter the etalon 29 and pass through the etalon 29.

  The light L32 emitted from the light emitting layer 52 and traveling toward the etalon 29 first enters the scattering layer 43B. When the light L32 is not scattered by the scattering layer 43B, the light L32 travels straight and enters the etalon 29. The light L32 is reflected by the etalon 29 because its wavelength is not a wavelength that causes an interference effect in the etalon 29. When the reflected light is incident on the scattering layer 43B again and is not scattered by the scattering layer 43B, the reflected light travels straight, passes through the color conversion layer 57, converts its wavelength, and is then reflected by the reflection layer 55. (Light L32B). The reflected light L32B passes through the color conversion layer 57 again and then passes through the light emitting layer 52 with almost no absorption. The light L32B passes through the light emitting layer 52 and then enters the scattering layer 43B again. Of the light scattered in the scattering layer 43 </ b> B, the light L <b> 32 </ b> C traveling in the normal direction of the etalon 29 can pass through the etalon 29.

  As described above, in the light emitting element 5, the light emitted from the light emitting layer 52 always passes through the color conversion layer 57 before finally passing through the etalon 29. Once the wavelength changes through the color conversion layer 57 and then passes through the light emitting layer 52, the light wavelength is different from the wavelength of the light emitted from the light emitting layer 52, so that the light is hardly absorbed. Thereby, it is possible to suppress the loss of light when going back and forth between the etalon 29 and the reflective layer 55.

  Further, in the light emitting element 5, the wavelength of light emitted from the light emitting layer 52 is changed by being transmitted through the color conversion layer 57. In other words, the wavelength of the light emitted from the light emitting layer 52 can be set without being restricted by the wavelength of the light seen by the observer (transmitted light of the etalon 29). That is, the wavelength of the light emitted from the light emitting layer 52 only needs to be shorter than the wavelength of the light viewed by the observer, and restrictions on the light emitting layer 52 can be reduced.

  As described above, in this embodiment, since the color conversion layer is provided, light is not absorbed when light emitted from the light emitting layer is reflected by the reflective layer and passes through the light emitting layer again. Loss can be suppressed. Further, the wavelength of light emitted from the light emitting layer and the wavelength of light viewed by the observer can be made different, and a high degree of freedom in design can be realized. Other effects are the same as in the case of the first embodiment.

[Modification 2-1]
In the above embodiment, the color conversion layer 57 is provided between the light emitting layer 52 and the reflective layer 55. However, the present invention is not limited to this. For example, the color conversion layer may be replaced with the interference layer 29. The color conversion layer may be provided between the light emitting layer 52 and the color conversion layer is provided between both the interference layer 29 and the light emitting layer 52 and between the light emitting layer 52 and the reflective layer 55, that is, on both sides of the light emitting layer 52. It may be provided. The case where the color conversion layer is provided on both sides of the light emitting layer will be described below.

  FIG. 15 illustrates a configuration example and a schematic operation example of the light emitting element 6 according to the modification. The light emitting element 6 includes color conversion layers 57 and 58 on both sides of the light emitting layer 52. The color conversion layer 57 is provided between the light emitting layer 52 and the reflective layer 55, and the color conversion layer 58 is provided between the etalon 29 and the light emitting layer 52. In this example, the arrangement relationship between the scattering layer 43B and the color conversion layer 58 is such that the scattering layer 43B is arranged on the light emitting layer 52 side and the color conversion layer 58 is arranged on the etalon 29 side. However, the present invention is not limited to this. Instead, for example, the scattering layer 43B may be disposed on the etalon 29 side, and the color conversion layer 58 may be disposed on the light emitting layer 52 side.

  As shown in FIG. 15, among the light emitted from the light emitting layer 52 and traveling toward the etalon 29, the light L41 traveling in the direction deviated from the normal direction of the light emitting layer 52 is scattered by the scattering layer 43B and its direction changes. After that, the wavelength is converted through the color conversion layer 58 and then incident on the etalon 29. At this time, the light L41B traveling in the normal direction of the etalon 29 among the incident light can pass through the etalon 29.

  In this modification, since the color conversion layer is provided on both sides of the light emitting layer, light is not absorbed when the light emitted from the light emitting layer is reflected by the reflective layer or the etalon and passes through the light emitting layer again. , Light loss can be minimized.

  Moreover, in the said embodiment, although the scattering layer was provided in the inside of the translucent layer 51, it is not limited to this, For example, it is provided in the inside of the translucent layer 53, for example. Alternatively, it may be provided on the surface of the reflective layer 55 as shown in the first embodiment.

  The present invention has been described above with some embodiments and modifications. However, the present invention is not limited to these embodiments and the like, and various modifications can be made.

  In each of the embodiments described above, the display device 2 is driven by the passive drive method, but is not limited to this, and may be driven by the active drive method instead. Hereinafter, an example of the active drive method will be described.

  FIG. 15 illustrates a configuration example of the pixel 7B used in the active drive method. The pixel 7 </ b> B includes the light emitting element 4 and the pixel circuit 70. As the light emitting element 4, for example, the light emitting element of the first embodiment or the like can be used. The pixel circuit 70 includes a writing transistor Tr1, a driving transistor Tr2, and a capacitor element Cs, and has a so-called “2Tr1C” circuit configuration. In the pixel circuit 70, the gate of the writing transistor Tr1 is connected to the scanning line WSL, the source is connected to the signal line DTL, and the drain is connected to the gate of the driving transistor Tr2 and one end of the capacitive element Cs. The drain of the drive transistor Tr2 is connected to the power supply line DSL, and the source is connected to the other end of the capacitive element Cs and the anode of the light emitting element 4. The cathode of the light emitting element 4 is connected to the ground.

  With this configuration, in the pixel 7B, when a signal is supplied to the scanning line WSL and the writing transistor Tr1 is turned on, a voltage corresponding to the pixel signal supplied to the signal line DTL is held in the capacitor element Cs. A current Id of the writing transistor Tr 2 is set, and the current Id is supplied to the light emitting element 4.

  The write transistor Tr1 and the drive transistor Tr2 may be formed using, for example, the GaN crystal layer 23 (see FIG. 4) in which the light emitting hill 35 is formed in the display device 2 shown in FIG. It may be formed. Alternatively, these separately manufactured transistors may be mounted on the display device 2. Alternatively, a light emitting hill 35 or the like may be formed on the wafer on which these transistors, signal lines DTL, scanning lines WSL, power supply lines DSL, and their drive circuits are formed, as shown in FIG. .

  Further, in each of the above embodiments, as shown in FIG. 2, the light is emitted from the light emitting hill 35 to the substrate 21 side (upper side in FIG. 2). For example, you may make it inject | emit in the direction opposite to the board | substrate 21 (downward direction of FIG. 2). In this case, the row address line 33 and the electrode 24 (FIG. 4) are made of a translucent material such as ITO. The column address line 31 is made of a material that reflects light, such as metal. The etalon 29 is provided on the light emitting side (lower side in FIG. 2).

  In each of the above embodiments, the light-emitting element 4 has the structure shown in FIG. 3A. However, the present invention is not limited to this. For example, the light-emitting element 4 has the structure shown in FIG. Also good. FIG. 16A shows a display device in which two electrodes 45 and 46 for power feeding are provided on one surface of the light emitting element 4. In this case, the electrode 45 is made of a material that reflects light, such as metal. In FIG. 16B, the etalon 29 is provided not on the substrate 21 side but on the light emitter 42 side. In this case, the electrodes 47 and 48 are made of a material that reflects light, such as metal. The board | substrate 21 does not need to have translucency.

  Moreover, in each said embodiment, although one scattering layer was provided, it is not limited to this, For example, you may make it provide a some scattering layer.

  Further, for example, in each of the above embodiments, the light emitting element has a light emitting diode. However, the present invention is not limited to this, and instead, for example, an EL (Electro-Luminescence) element is provided. May be.

  For example, the color conversion layer may be disposed on the surface opposite to the light emitting layer 52 of the etalon 29. For example, the display device 2 can display a color image by arranging light emitting elements of three colors using red, green, and blue color conversion layers in the display device 2.

  Further, for example, in each of the above-described embodiments, the row address line 33 is configured by using a metal. However, the row address line 33 is not limited to this. ). Even in this case, since the row driver 13 supplies the scanning signal Vscan from both sides of the row address line 33, the influence of a voltage drop in the row address line 33 can be reduced, and variations in light intensity can be prevented.

  The light emitting element, the display device, and the driving method of the display device according to the above-described embodiments can be applied to various electronic devices such as a head mounted display. FIG. 17 shows the appearance of the head mounted display. The head mounted display 70 includes, for example, a display device 501, a light guide plate 502 that transmits an image displayed on the display device 501, and a display surface 503 that displays an image. The display device 501 is the above-described embodiment. The light emitting element such as the display device, the display device, and the driving method of the display device are used. A specific example of this is described in, for example, Japanese Patent Application Laid-Open No. 2009-300480.

  DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 2 ... Display device, 4, 4B, 5, 6 ... Light emitting element, 7, 7B ... Pixel, 9 ... Light, 11 ... Control part, 12, 12A, 12B ... Column driver, 13, 13A, 13B ... row driver, 21 ... substrate, 22 ... n-type GaN crystal layer, 23 ... GaN crystal layer, 24, 41, 44-48 ... electrode, 25 ... interphase insulating film, 29 ... etalon, 31 ... column address line, 32 ... Column electrodes, 33 ... row address lines, 34 ... row electrodes, 35 ... luminous hills, 42 ... luminous bodies, 43, 43B ... scattering layers, 51, 53 ... transmissive layers, 52 ... light emitting layers, 55 ... reflective layers, 57, 58 ... color conversion layer, 70 ... pixel circuit, Cs ... capacitive element, C1, C2, C10, C11 ... characteristics, d ... spacing, DSL ... power supply line, DTL ... signal line, L1 to L6, L11, L11B, L11C, L12, L12B, L12C, L31, L31B L32, L32B, L32C, L41, L41B ... light, RS ... semi-resonator structure, Sig ... image signal, Vpix ... pixel signal, Tr1 ... write transistor, Tr2 ... drive transistor, Vscan ... scan signal, Vsigc ... row drive signal, Vsigr: column drive signal, WSL: scanning line, φ: incident angle, θ, α: angle, γ: radiation angle, λ, λn: wavelength.

Claims (12)

A light emitting layer;
An interference layer disposed to face the light emitting layer and interfere so as to transmit normal light traveling in the normal direction from the direction of the light emitting layer;
A reflective layer disposed opposite to the light emitting layer opposite to the interference layer and reflecting light from the direction of the light emitting layer;
A light emitting device comprising: a scattering structure disposed between the interference layer and the reflective layer. The light-emitting element according to claim 1, wherein the interference layer is in contact with the light-emitting layer or disposed through another light-transmitting layer and is in close contact with each other. In the light emitting layer and the reflective layer, normal light directed directly from the light emitting layer to the interference layer and normal light directed from the light emitting layer through the reflective layer to the interference layer have the same phase. The light emitting element according to claim 1, wherein the resonance structure is configured as described above. The light emitting device according to claim 1, wherein the scattering structure is formed on a surface of the reflective layer. The light-emitting element according to claim 1, wherein the scattering structure includes a plurality of layers having different refractive indexes. The light emitting device according to claim 1, wherein the interference layer is made of an etalon. The light emitting device according to claim 1, further comprising a color conversion layer that converts a wavelength of transmitted light between the interference layer and the reflection layer. A plurality of light emitting elements;
A plurality of first address lines and a plurality of second address lines for transmitting signals for causing the plurality of light emitting elements to emit light;
A drive circuit for driving a plurality of first address lines,
The light emitting element is
A light emitting layer;
An interference layer disposed to face the light emitting layer and interfere so as to transmit normal light traveling in the normal direction from the direction of the light emitting layer;
A reflective layer disposed opposite to the light emitting layer opposite to the interference layer and reflecting light from the direction of the light emitting layer;
A display device comprising: a scattering structure disposed between the interference layer and the reflective layer. Each of the plurality of light emitting elements is connected to one of the plurality of first address lines, and is connected to one of the plurality of second address lines,
The plurality of first address lines are formed of a translucent material;
The display device according to claim 8, wherein the drive circuit drives the first address line from both ends. The display device according to claim 9, wherein the translucent material is a semiconductor. A drive signal is supplied to both ends of the plurality of first address lines in a time-sharing manner,
Supplying another driving signal different from the driving signal to the plurality of second address lines in a time-sharing manner;
Among the plurality of first address lines, a first address line to which the drive signal is supplied and to a second address line to which the other drive signal is supplied among the plurality of second address lines. Light is emitted from the light emitting layer of the connected light emitting element,
The light is scattered by the scattering structure,
Reflecting light from the direction of the light emitting layer by a reflective layer disposed opposite the light emitting layer,
A display method in which an interference layer disposed opposite to the side opposite to the reflective layer of the light emitting layer is caused to interfere so as to transmit normal light traveling in the normal direction from the direction of the light emitting layer. A display device having a plurality of light emitting elements;
A processing unit that performs predetermined processing using the display device,
The light emitting element is
A light emitting layer;
An interference layer disposed to face the light emitting layer and interfere so as to transmit normal light traveling in the normal direction from the direction of the light emitting layer;
A reflective layer disposed opposite to the light emitting layer opposite to the interference layer and reflecting light from the direction of the light emitting layer;
An electronic device comprising: a scattering structure disposed between the interference layer and the reflective layer.

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